Crown ether surfactant, preparation method thereof, and photoresist developer

Abstract

The invention discloses a crown ether surfactant and a preparation method thereof, and a photoresist developer, belonging to the technical field of photoresists. The crown ether surfactant in the invention is more tightly bound to photoresist molecules through the π-π interaction of intermolecular benzene rings, so that the developer is more easily and evenly covered on the surface of a negative film, ensuring development uniformity, thereby ensuring pattern accuracy. The crown ether surfactant and the imidazole surfactant in the photoresist developer interact with each other, synergistically enhancing efficiency, effectively reducing the surface tension of the developer, rapidly reducing the contact angle during dynamic use, generating fewer bubbles and rapidly defoaming, improving the wettability of the developer, enhancing the developing ability of the developer, ensuring the service life of the developer, stabilizing the development speed, and having low irritation, easy rinsing, environmental friendliness, and meeting environmental protection requirements.

Description

Technical Field

[0001] The invention belongs to the technical field of photoresists, and particularly relates to a crown ether surfactant and a preparation method thereof, and a photoresist developer. Background Art

[0002] Developers typically use organic or inorganic alkaline compounds as their primary ingredients to dissolve photoresist. However, using only a simple combination of water and alkaline compounds often makes it difficult to quickly and evenly coat the entire surface of the photoresist due to the high surface tension of this combination. This uneven spreading can lead to imbalances in the development process, potentially causing underdevelopment or overdevelopment in some areas. Consequently, the edges of the developed pattern are often uneven, adversely affecting subsequent processes.

[0003] Patent application publication number CN118884786A discloses a negative photoresist developer composition, its preparation method, and application. The negative photoresist developer composition comprises, by mass, 0.1-34 parts of an amidine compound, 2-18 parts of a compounded solubilizer, 0.8-32 parts of a Gemini surfactant, 0.1-8 parts of a buffer, 0.5-20 parts of an anti-fouling promoter, and 0.4-7 parts of a leveling regulator. The compounded solubilizer comprises an organic ammonium acid and an ionic liquid. The developer is primarily intended to address the corrosion protection issues of various substrates or metal layers, but the development effect is still unsatisfactory. Summary of the Invention

[0004] The purpose of the present invention is to provide a crown ether surfactant and a preparation method thereof to solve the problem of unbalanced development of a developer, and to provide a photoresist developer to solve the problem of poor photoresist development effect.

[0005] The purpose of the present invention can be achieved through the following technical solutions:

[0006] In a first aspect, the present invention provides a crown ether surfactant, the chemical structural formula of the crown ether surfactant is as follows:

[0007] In the formula, x is an integer from 1 to 3; y is an integer from 1 to 3; and m is an integer from 5 to 15.

[0008] Preferably, x is 2, y is 2, and m is 10.

[0009] Preferably, x is 1, y is 2, and m is 12.

[0010] In a second aspect, the present invention provides a method for preparing a crown ether surfactant, comprising the following steps:

[0011] Diaminodibenzocrown ether, alkyl carboxylic acid and carboxyl activator are added to an organic solvent in a molar ratio of 1:2-2.5:2.2-3, mixed evenly, and reacted at a constant temperature of 55-70°C for 4-7 hours. After the reaction is completed, the product is filtered, and a portion of the solvent is removed by rotary evaporation. The product is then purified by column chromatography, and the eluent is removed by rotary evaporation to obtain a crown ether surfactant.

[0012] Preferably, the diaminodibenzo-crown ether is one of diaminodibenzo-14-crown-4, diaminodibenzo-15-crown-5 and diaminodibenzo-18-crown-6.

[0013] Preferably, the alkyl carboxylic acid is one of hexanoic acid, heptanoic acid, octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tridecanoic acid, tetradecanoic acid, pentadecanoic acid and hexadecanoic acid.

[0014] Preferably, the organic solvent is one or more of diethyl ether, carbon disulfide, chloroform, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone, dimethyl sulfoxide and n-butanol.

[0015] Preferably, the carboxyl activator is one or more of N-hydroxysuccinimide, 1-ethyl-(3-dimethylaminopropyl)carbodiimide and N,N-dicyclohexylcarbodiimide.

[0016] In a third aspect, the present invention provides a photoresist developer, which is composed of the following raw materials in the following mass percentages: 0.5%-1.5% tetraethylammonium hydroxide, 0.1%-0.5% diethylamine, 0.5%-2% of the above-mentioned crown ether surfactant or the crown ether surfactant prepared by the above-mentioned preparation method, 0.1%-0.5% of imidazole surfactant, 0.1%-2% corrosion inhibitor, 0.05%-0.5% accelerator, and the balance is water.

[0017] Preferably, the mass ratio of the crown ether surfactant to the imidazole surfactant is 2-4:1.

[0018] Preferably, the imidazole-type surfactant is 1-dodecyl-3-methyl-imidazolium bromide and / or 1-hexadecyl-3-methyl-imidazolium chloride.

[0019] Due to the delocalized electronic structure on the imidazole ring and the hydrogen bonding between the imidazole rings, imidazole-type surfactants can spontaneously aggregate in water to form aggregates of various structures, increasing the contact area between the developer and the photoresist surface, thereby improving the wettability and permeability of the developer to the photoresist surface, making the development process more comprehensive and uniform.

[0020] Preferably, the imidazole surfactant is obtained by mixing 1-dodecyl-3-methyl-imidazolium bromide and 1-hexadecyl-3-methyl-imidazolium chloride in a mass ratio of 5:2-5.

[0021] Preferably, the corrosion inhibitor is one or more of benzotriazole, methimazole, N-(3-aminopropyl)morpholine, 5-aminotetrazole, 2,4-dihydroxypyrimidine and hydroxylated naphthoquinone.

[0022] Preferably, the accelerator is one or more of cinnamic acid, caffeic acid and phenylalanine.

[0023] In an alkaline environment, the accelerator will form a strong base weak acid salt, which can reduce the initial concentration of hydroxide ions in the developer, making the initial rate of dissolution of the photoresist by the developer lower. As the photoresist dissolves, the acid ions in the strong base weak acid salt will hydrolyze into hydroxide ions, which is beneficial for the photoresist to maintain a relatively stable dissolution rate throughout the development process, improve the uniformity and stability of the development, and ensure high-quality development effects.

[0024] Beneficial effects of the present invention:

[0025] 1. The structure of the crown ether surfactant of the present invention consists of two hydrophilic amide groups, two hydrophobic long carbon chain alkyl groups and a linking group, wherein the linking group is a benzocrown ether ring. In the developer, the crown ether ring of the benzocrown ether is hydrophobic on the outside and hydrophilic on the inside, and the larger volume of the benzocrown ether ring can reduce the repulsion tendency between the hydrophilic groups of the crown ether surfactant, shortening the distance between the hydrophobic chains. Moreover, the chemical bond of the benzocrown ether ring does not destroy the hydrophilicity, greatly promoting the better dissolution of the crown ether surfactant in the developer; at the same time, the introduction of the benzocrown ether ring increases the distance between the crown ether surfactant molecules, loosens the arrangement of the surfactant molecules at the gas / liquid interface, reduces the surface tension, and improves the defoaming speed; in addition, on the surface of the photoresist with benzene rings as the main structure, the crown ether surfactant of the present invention is more tightly bound to the photoresist molecules through the π-π interaction of the intermolecular benzene rings, making it easier for the developer to evenly cover the film surface, ensuring the uniformity of development, thereby ensuring the pattern accuracy.

[0026] 2. The developer of the present invention comprises tetraethylammonium hydroxide, diethylamine, a crown ether surfactant, an imidazole surfactant, a corrosion inhibitor, and an accelerator. Tetraethylammonium hydroxide and diethylamine are used as main alkaline agents to prevent incomplete dissolution of residues in the unexposed portion, which is superior to inorganic alkalis and will not introduce contaminating ions that affect the electrical performance and manufacturing yield of the device. The crown ether surfactant and the imidazole surfactant interact with each other and synergistically enhance the efficiency, effectively reducing the surface tension of the developer, quickly reducing the contact angle during dynamic use, generating fewer bubbles and quickly defoaming them, improving the wettability of the developer, enhancing the developing ability of the developer, ensuring the service life of the developer, stabilizing the developing speed, and having low irritation, easy rinsing, environmentally friendly, and meeting environmental protection requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The present invention will be further described below with reference to the accompanying drawings.

[0028] Figure 1 This is the hydrogen spectrum corresponding to the crown ether surfactant prepared in Preparation Example 1 of the present invention;

[0029] Figure 2 This is the hydrogen spectrum corresponding to the crown ether surfactant prepared in Preparation Example 2 of the present invention;

[0030] Figure 3 is a scanning electron microscope image of a photoresist test piece treated with the developer obtained in Example 1 of the present invention;

[0031] Figure 4 is an optical microscope image of a photoresist test piece after being treated with the developer obtained in Example 1 of the present invention;

[0032] Figure 5 is a scanning electron microscope image of a photoresist test piece treated with the developer obtained in Comparative Example 4 of the present invention;

[0033] Figure 6 This is an optical microscope image of the photoresist test piece after being treated with the developer obtained in Comparative Example 4 of the present invention. DETAILED DESCRIPTION

[0034] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts shall fall within the scope of protection of the present invention.

[0035] Preparation Example 1

[0036] The preparation of crown ether type surfactant comprises the following steps:

[0037] 0.1 mol of trans-4,4'-diaminodibenzo-18-crown-6 (CAS No. 32082-45-4), 0.21 mol of undecanoic acid, and 0.22 mol of N,N-dicyclohexylcarbodiimide were added to 1000 mL of N,N-dimethylformamide, mixed well, and reacted at 55°C for 4 hours. After the reaction, the mixture was filtered and partially evaporated to remove the solvent. The mixture was then purified by column chromatography (using a mixed solvent of benzene / ether in a volume ratio of 4:6 as the eluent). The eluent was then evaporated to obtain a crown ether surfactant with a yield of 96.8%.

[0038] The chemical structural formula of the obtained crown ether surfactant is as follows:

[0039]

[0040] H NMR spectrum ( Figure 1 )Analysis: 1H NMR (500 MHz, chloroform-d) δ9.13 (s, 1H), 7.14 (s, 1H), 6.93 (dd, J = 9.0, 2.2 Hz, 1H), 6.77 (d, J = 8.9 Hz, 1H), 4.20 (td, J = 5.0, 1.7 Hz, 4H), 3.77 (td, J = 5.0, 1.8 Hz, 4H), 2.33 (t, J = 8.3 Hz, 2H), 1.70-1.62 (m, 2H), 1.35-1.26 (m, 13H), 0.92-0.85 (m, 3H); the peak at 9.13 is the characteristic absorption peak of the imino group in the amide group.

[0041] Preparation Example 2

[0042] The preparation of crown ether type surfactant comprises the following steps:

[0043] 0.1 mol of 4′,4″(5″)-diaminodibenzo-15-crown-5 (CAS No. 245086-08-2), 0.25 mol of tridecanoic acid, and 0.28 mol of N-hydroxysuccinimide were added to 1000 mL of chloroform, mixed evenly, and reacted at 70°C for 6 h. After the reaction, the mixture was filtered, and some of the solvent was removed by rotary evaporation. The mixture was then purified by column chromatography (using a mixed solvent of cyclohexane / ethyl acetate in a volume ratio of 1:1 as the eluent), and the eluent was removed by rotary evaporation to obtain a crown ether surfactant with a yield of 97.5%.

[0044] The chemical structural formula of the obtained crown ether surfactant is as follows:

[0045]

[0046] H NMR spectrum ( Figure 2) Analysis: 1H NMR (500MHz, chloroform-d) δ9.13 (s, 1H), 7.15 (d, J = 1.9 Hz, 1H), 6.93 (dd, J = 8.9, 1.9 Hz, 1H), 6.78 (d, J = 8.9 Hz, 1H), 4.31 (s, 1H), 4.20 (t, J = 5.0 Hz, 2H), 3.77 (t, J = 5.0 Hz, 2H), 2. 33 (d, J = 16.7 Hz, 1H), 1.65 (p, J = 8.0 Hz, 2H), 1.39-1.33 (m, 1H), 1.36-1.30 (m, 2H), 1.33-1.27 (m, 5H), 1.30-1.23 (m, 11H), 0.92-0.85 (m, 3H); the peak at 9.13 is the characteristic absorption peak of the imino group in the amide group.

[0047] Example 1

[0048] A photoresist developer is composed of the following raw materials in percentage by mass: 1% tetraethylammonium hydroxide, 0.2% diethylamine, 1% crown ether surfactant, 0.25% imidazole surfactant, 0.5% corrosion inhibitor, 0.15% accelerator, and the balance water;

[0049] Among them, the crown ether surfactant is prepared by Preparation Example 1; the imidazole surfactant is 1-dodecyl-3-methyl-imidazolium bromide; the corrosion inhibitor is benzotriazole; and the accelerator is cinnamic acid.

[0050] Example 2

[0051] A photoresist developer is composed of the following raw materials in percentage by mass: 0.5% tetraethylammonium hydroxide, 0.5% diethylamine, 1.5% crown ether surfactant, 0.5% imidazole surfactant, 2% corrosion inhibitor, 0.05% accelerator, and the balance water;

[0052] Among them, the crown ether surfactant is prepared by Preparation Example 1; the imidazole surfactant is 1-hexadecyl-3-methyl-imidazolium chloride; the corrosion inhibitor is 5-aminotetrazole; and the accelerator is caffeic acid.

[0053] Example 3

[0054] A photoresist developer is composed of the following raw materials in percentage by mass: 1.5% tetraethylammonium hydroxide, 0.1% diethylamine, 2% crown ether surfactant, 0.5% imidazole surfactant, 0.1% corrosion inhibitor, 0.5% accelerator, and the balance water;

[0055] Among them, the crown ether type surfactant is prepared by Preparation Example 2; the imidazole type surfactant is obtained by mixing 1-dodecyl-3-methyl-imidazolium bromide and 1-hexadecyl-3-methyl-imidazolium chloride in a mass ratio of 1:1; the corrosion inhibitor is N-(3-aminopropyl)morpholine; and the accelerator is phenylalanine.

[0056] Example 4

[0057] A photoresist developer is composed of the following raw materials in percentage by mass: 1% tetraethylammonium hydroxide, 0.2% diethylamine, 1% crown ether surfactant, 0.25% imidazole surfactant, 0.5% corrosion inhibitor, 0.15% accelerator, and the balance water;

[0058] Among them, the crown ether surfactant is prepared by Preparation Example 1; the imidazole surfactant is 1-hexadecyl-3-methyl-imidazole chloride; the corrosion inhibitor is benzotriazole; and the accelerator is cinnamic acid.

[0059] Example 5

[0060] A photoresist developer is composed of the following raw materials in percentage by mass: 1% tetraethylammonium hydroxide, 0.2% diethylamine, 1% crown ether surfactant, 0.25% imidazole surfactant, 0.5% corrosion inhibitor, 0.15% accelerator, and the balance water;

[0061] Among them, the crown ether type surfactant is prepared by Preparation Example 1; the imidazole type surfactant is obtained by mixing 1-dodecyl-3-methyl-imidazolium bromide and 1-hexadecyl-3-methyl-imidazolium chloride in a mass ratio of 5:4; the corrosion inhibitor is benzotriazole; and the accelerator is cinnamic acid.

[0062] Comparative Example 1

[0063] Comparative Example 1 is different from Example 1 only in that the crown ether surfactant is replaced by an equal mass of dibenzo-18-crown-6-ether, as follows:

[0064] A photoresist developer is composed of the following raw materials in percentage by mass: 1% tetraethylammonium hydroxide, 0.2% diethylamine, 1% dibenzo-18-crown-6-ether, 0.25% imidazole surfactant, 0.5% corrosion inhibitor, 0.15% accelerator, and the balance water;

[0065] The imidazole surfactant is 1-dodecyl-3-methyl-imidazolium bromide; the corrosion inhibitor is benzotriazole; and the accelerator is cinnamic acid.

[0066] Comparative Example 2

[0067] Comparative Example 2 is different from Example 1 only in that an equal mass of 4,7-dimethyl-5-decyne-4,7-diol is used to replace the crown ether surfactant, as follows:

[0068] A photoresist developer is composed of the following raw materials in percentage by mass: 1% tetraethylammonium hydroxide, 0.2% diethylamine, 1% 4,7-dimethyl-5-decyne-4,7-diol, 0.25% imidazole surfactant, 0.5% corrosion inhibitor, 0.15% accelerator, and the balance water;

[0069] The imidazole surfactant is 1-dodecyl-3-methyl-imidazolium bromide; the corrosion inhibitor is benzotriazole; and the accelerator is cinnamic acid.

[0070] Comparative Example 3

[0071] Comparative Example 3 is different from Example 1 only in that an equal amount of crown ether surfactant is used to replace the imidazole surfactant, as follows:

[0072] A photoresist developer is composed of the following raw materials in percentage by mass: 1% tetraethylammonium hydroxide, 0.2% diethylamine, 1.25% crown ether surfactant, 0.5% corrosion inhibitor, 0.15% accelerator, and the balance water;

[0073] The crown ether surfactant is prepared according to Preparation Example 1; the corrosion inhibitor is benzotriazole; and the accelerator is cinnamic acid.

[0074] Comparative Example 4

[0075] Comparative Example 4 is different from Example 1 only in that an imidazole-type surfactant of equal mass is used to replace the crown ether-type surfactant, as follows:

[0076] A photoresist developer is composed of the following raw materials in percentage by mass: 1% tetraethylammonium hydroxide, 0.2% diethylamine, 1.25% imidazole surfactant, 0.5% corrosion inhibitor, 0.15% accelerator, and the balance water;

[0077] The imidazole surfactant is 1-dodecyl-3-methyl-imidazolium bromide; the corrosion inhibitor is benzotriazole; and the accelerator is cinnamic acid.

[0078] Performance Testing

[0079] (1) Surface properties of developer

[0080] Dynamic surface tension: The dynamic surface tension of the developers obtained in Examples 1-5 and Comparative Examples 1-4 was measured using the maximum bubble pressure method. The capillary radius was 0.237 mm, the temperature was 25±0.1°C, and the bubble surface life span ranged from 10 to 50,000 ms. Dynamic tension curves were obtained. The following dynamic tension values ​​were taken at a bubble frequency of 6 Hz and a bubble life span of 100 ms. The results are shown in Table 1 below.

[0081] Contact Angle: A photoresist was evenly spread on a smooth, clean glass surface by spin coating. Excess solvent in the photoresist was removed in a vacuum drying oven, and the photoresist was completely dried in an oven at 110°C to prepare a test sample. The contact angle method was used to measure the contact angles of the developer solutions obtained in Examples 1-5 and Comparative Examples 1-4 between the surface of the test sample photoresist and air. The test droplet volume was 5 μL, and the measurement was performed 3 seconds after the liquid was added. The test temperature was controlled at 23±0.5°C. The results are shown in Table 1 below.

[0082] Foaming property: 20 mL of the developer obtained in Examples 1 to 5 and Comparative Examples 1 to 4 was added to a 100 mL graduated cylinder and vertically oscillated 30 times within 15 seconds. After standing for 15 minutes, the foam height was measured. The measurement was repeated three times, and the foam height in mL was recorded and averaged. The results are shown in Table 1 below.

[0083] Table 1

[0084] Dynamic surface tension / (mN / m) Contact angle / ° Foam height / mL Example 1 28.8 30.27 25.7 Example 2 26.4 29.11 23.5 Example 3 27.3 29.65 24.9 Example 4 28.0 31.01 25.2 Example 5 25.3 27.53 23.6 Comparative Example 1 39.4 44.56 30.2 Comparative Example 2 33.1 35.45 26.3 Comparative Example 3 36.2 40.31 28.5 Comparative Example 4 44.5 50.32 35.4

[0085] As can be seen from Table 1, the developer provided by the present invention has a low dynamic surface tension, can quickly reduce the contact angle during dynamic use, generates few bubbles and quickly defoams, and the interaction between the crown ether surfactant and the imidazole surfactant achieves a wetting effect of 1+1>2.

[0086] (2) Development performance of developer

[0087] At 23°C, the developer obtained in Examples 1-5 and Comparative Examples 1-4 was diluted to 2.10 mJ / cm, and the positive photoresist film required for the test was baked and exposed at 40 mJ / cm 2 The glass substrate with photoresist was exposed to light and placed on a developer to develop the photolithographic pattern on the glass substrate. The following were observed under a microscope: 1. Whether the developed pattern was clear; 2. Whether there was any photoresist residue; 3. Whether there was any substrate corrosion; 4. Whether the line width CD value (line width standard 10.0μm) was qualified: ○: CD error <0.5μm; ×: CD error ≥0.5μm; 5. Whether there was any tailing phenomenon at the taper angle. The specific conditions are shown in Table 2 below.

[0088] Table 2

[0089]

[0090]

[0091] The photoresist test piece treated with the developer obtained in Example 1 was characterized by scanning electron microscopy (SEM). The SEM images obtained by characterization are as follows: Figure 3 As shown; the optical microscope image of the photoresist test piece after developer treatment is as shown Figure 4 As shown, Figure 3 and Figure 4 It can be seen that the developer produces complete lines in the photoresist development, with no photoresist residue, no burrs, moderate angles, and no tailing.

[0092] The photoresist test piece treated with the developer obtained in Comparative Example 4 was characterized by scanning electron microscopy (SEM). The SEM images obtained by characterization are as follows: Figure 5 As shown; the optical microscope image of the photoresist test piece after developer treatment is as shown Figure 6 As shown, Figure 5 and Figure 6 It can be seen that the developer has rough lines and tailing problems in the photoresist development.

[0093] In addition, the developer obtained in Comparative Example 4 does not contain the crown ether surfactant of the present invention, which will cause certain corrosion to the substrate, which fully demonstrates that the crown ether surfactant of the present invention works together with other components to effectively improve the corrosion condition of the substrate; the crown ether surfactant can form a stable complex with metal ions, change the electrical and chemical properties of the substrate surface, and prevent corrosion of the substrate.

[0094] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0095] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. A crown ether surfactant, characterized in that The chemical structural formula of the crown ether surfactant is as follows: or .

2. The method for preparing a crown ether surfactant according to claim 1, wherein The following steps are involved: Diaminodibenzocrown ether, alkyl carboxylic acid and carboxyl activator are added to an organic solvent in a molar ratio of 1:2-2.5:2.2-3, mixed evenly, and reacted at a constant temperature of 55-70°C for 4-7 hours. After the reaction is completed, the product is filtered, and a portion of the solvent is removed by rotary evaporation. The product is then purified by column chromatography, and the eluent is removed by rotary evaporation to obtain a crown ether surfactant.

3. The method for preparing a crown ether surfactant according to claim 2, wherein The diaminodibenzo crown ether is diaminodibenzo-15-crown-5 or diaminodibenzo-18-crown-6.

4. The method for preparing a crown ether surfactant according to claim 2, wherein The alkyl carboxylic acid is undecanoic acid or tridecanoic acid.

5. A photoresist developer, characterized in that: The method is composed of the following raw materials in percentage by mass: 0.5%-1.5% tetraethylammonium hydroxide, 0.1%-0.5% diethylamine, 0.5%-2% of the crown ether surfactant according to claim 1 or the crown ether surfactant prepared by the preparation method according to any one of claims 2 to 4, 0.1%-0.5% of imidazole surfactant, 0.1%-2% of corrosion inhibitor, 0.05%-0.5% of accelerator, and the balance is water.

6. A photoresist developer according to claim 5, characterized in that: The mass ratio of the crown ether surfactant to the imidazole surfactant is 2-4:

1.

7. A photoresist developer according to claim 5, characterized in that: The imidazole surfactant is 1-dodecyl-3-methyl-imidazolium bromide and / or 1-hexadecyl-3-methyl-imidazolium chloride.

8. A photoresist developer according to claim 7, characterized in that: The imidazole surfactant is obtained by mixing 1-dodecyl-3-methyl-imidazolium bromide and 1-hexadecyl-3-methyl-imidazolium chloride in a mass ratio of 5:2-5.

9. A photoresist developer according to claim 5, characterized in that: The corrosion inhibitor is one or more of benzotriazole, methimazole, N-(3-aminopropyl)morpholine, 5-aminotetrazole, 2,4-dihydroxypyrimidine and hydroxylated naphthoquinone; The accelerator is one or more of cinnamic acid, caffeic acid and phenylalanine.

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