A bonding parameter optimization method for metal oxide semi-conductor field effect transistor

Abstract

The present invention relates to the technical field of semiconductor device manufacturing, and is a bonding parameter optimization method for metal oxide semiconductor field effect transistors, comprising: obtaining a bonding metal wire set and a material analysis mechanism, using the material analysis mechanism to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, confirming a bonding parameter set based on a reference pressure range, a reference ultrasonic range, and a reference time range, performing a bonding operation on a pre-built initial transistor based on the bonding parameter set, the bonding metal wire set, and a bonding machine, performing a bonding stability test on a MOS tube using a temperature tester and a semiconductor tester to obtain a bonding success rate, using a bonding parameter set corresponding to a maximum bonding success rate as a target parameter set, and completing the bonding parameter optimization of the metal oxide semiconductor field effect transistor. The present invention can improve the accuracy of optimizing the bonding parameters of the metal oxide semiconductor field effect transistor and improve the yield rate of the metal oxide semiconductor field effect transistor.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor device manufacturing, and in particular to a bonding parameter optimization method for a metal oxide semiconductor field effect transistor. Background Art

[0002] In the semiconductor industry, metal oxide semiconductor field effect transistors (MOSFETs) are widely used in electronic devices and integrated circuits. The bonding process of MOSFETs has a crucial impact on their electrical performance, reliability and stability, and how to optimize the parameters of the bonding machine during the bonding process of MOSFETs has become an urgent problem to be solved.

[0003] Existing methods for optimizing the bonding parameters of MOSFETs often rely on manual debugging or production experience. Although this method can optimize the bonding parameters of MOSFETs, adjusting the bonding parameters through manual debugging and production experience is often not accurate enough and the debugging process takes too long. Therefore, there is an urgent need for a more scientific and accurate bonding parameter optimization method to improve the accuracy of optimizing the bonding parameters of MOSFETs, thereby improving the yield rate of MOSFETs produced in factories. Summary of the invention

[0004] The present invention provides a bonding parameter optimization method for a metal oxide semi-conductor field effect transistor, the main purpose of which is to improve the accuracy of optimizing the bonding parameters of the metal oxide semi-conductor field effect transistor and improve the yield rate of the metal oxide semi-conductor field effect transistor.

[0005] To achieve the above object, the present invention provides a bonding parameter optimization method for a metal oxide semiconductor field effect transistor, comprising:

[0006] Acquire a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity tester, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor;

[0007] Using a material analysis mechanism to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, and based on the bonding difficulty and bonding stability, determining a reference pressure range, a reference ultrasonic range, and a reference time range;

[0008] Identify a bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal;

[0009] The bonding parameter set is confirmed based on the reference pressure range, the reference ultrasonic range and the reference time range, and the following operations are performed on each bonding parameter set in the bonding parameter set:

[0010] Performing a bonding operation on the pre-built initial transistor based on the bonding parameter group, the bonding metal wire set and the bonding machine to obtain a bonded transistor, and packaging the bonded transistor to obtain a MOS transistor, wherein the MOS transistor includes: an initial source, an initial drain and an initial gate;

[0011] Use temperature tester and semiconductor tester to test the bonding stability of MOS tube to obtain the bonding success degree;

[0012] Summarizing the bonding success degrees to obtain multiple bonding success degrees, and confirming a maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the maximum bonding success degree among the multiple bonding success degrees;

[0013] The bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semi-conductor field effect transistor.

[0014] Optionally, the using a material analysis mechanism to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability includes:

[0015] Extracting bonding metal wires from the bonding metal wire set, performing a cutting operation on the bonding metal wires, and obtaining metal wire samples;

[0016] Obtaining the metal wire diameter of the metal wire sample, and performing a tensile test on the metal wire sample using a tensile testing machine in a material analysis institution to obtain the metal wire elongation and ultimate tensile force;

[0017] Using an elasticity tester to obtain the elastic modulus of the metal wire sample, using a test power supply to perform a resistance heat generation test on the metal wire sample to obtain the temperature rise rate of the metal wire, and using a thermal conductivity tester to obtain the thermal conductivity of the metal wire sample;

[0018] The bonding difficulty is calculated based on the thermal conductivity and elongation of the metal wire. The calculation formula is as follows:

[0019] ;

[0020] in, is the bonding difficulty, is the thermal conductivity of the metal wire, is the metal wire elongation, is the natural logarithm;

[0021] The bonding stability is calculated based on the elastic modulus of the metal wire, the temperature rise rate of the metal wire, the ultimate extension force and the diameter of the metal wire. The calculation formula is as follows:

[0022] ;

[0023] in, For bonding stability, is the ultimate extension force, is the wire diameter, is the elastic modulus of the metal wire, is the temperature rise rate of the metal wire, is a natural constant.

[0024] Optionally, the method of using a tensile testing machine in a material analysis mechanism to perform a tensile test on a metal wire sample to obtain an elongation and an ultimate tensile force of the metal wire comprises:

[0025] confirming the fixed metal wire based on the metal wire sample, the fixing fixture of the tensile testing machine and the tensile rod, and confirming the initial gauge length of the fixed metal wire;

[0026] The fixed metal wire is stretched by a stretching rod of a tensile testing machine, and a tensile force sensor and a displacement sensor are used to monitor in real time the tensile force and the tensile displacement of the fixed metal wire when the tensile rod of the tensile testing machine is stretched, until the fixed metal wire breaks, and the tensile force monitored by the tensile force sensor when the fixed metal wire breaks is used as the limit extension force, and the tensile displacement monitored by the displacement sensor when the fixed metal wire breaks is used as the target displacement;

[0027] The wire elongation is calculated using the initial gauge length and target displacement. The calculation formula is as follows:

[0028] ;

[0029] in, is the target displacement, is the initial gauge length.

[0030] Optionally, the step of performing a resistance heat generation test on a metal wire sample using a test power supply to obtain a temperature rise rate of the metal wire includes:

[0031] Performing a detection operation on the metal wire sample using a pre-built temperature sensor to obtain an initial sample temperature;

[0032] A test path is constructed based on the metal wire sample and the test power supply, the test power supply in the test path is started, the time of starting the test power supply in the test path is used as the starting point and the time is recorded in real time to obtain the power-on time, and the metal wire sample in the test path is tested for power-on by using the started test power supply until the power-on time reaches a preset power-on time threshold, and the metal wire sample in the test path after the power-on test is performed a detection operation by using a temperature sensor to obtain the heat generation temperature;

[0033] The temperature rise rate of the metal wire is calculated based on the initial sample temperature, power-on time threshold and heat generation temperature. The calculation formula is as follows:

[0034] ;

[0035] in, is the heat generation temperature, is the initial sample temperature, is the power-on time threshold.

[0036] Optionally, determining the reference pressure range, reference ultrasound range and reference time range based on the bonding difficulty and bonding stability includes:

[0037] The target pressure is calculated based on the bonding difficulty. The calculation formula is as follows:

[0038] ;

[0039] in, is the target pressure, is the preset reference bonding difficulty, is the preset reference pressure;

[0040] Calculating the fluctuation pressure according to the reference pressure and the preset fluctuation coefficient, wherein the fluctuation pressure is the product of the reference pressure and the fluctuation coefficient;

[0041] Determine a reference maximum pressure and a reference minimum pressure based on the target pressure and the fluctuating pressure, wherein the reference maximum pressure is the absolute difference between the target pressure and the fluctuating pressure, and the reference minimum pressure is the sum of the target pressure and the fluctuating pressure;

[0042] Determine a reference pressure range based on a reference maximum pressure and a reference minimum pressure, wherein the minimum value of the reference pressure range is the reference minimum pressure, and the maximum value of the reference pressure range is the reference maximum pressure;

[0043] Obtaining a reference ultrasonic range based on a reference bonding difficulty, a preset reference ultrasonic frequency, a fluctuation coefficient, and a bonding difficulty;

[0044] The target time is calculated based on the bond stability, and the calculation formula is as follows:

[0045] ;

[0046] in, is the target time, is the preset reference bonding stability, is the preset reference time;

[0047] Get the reference time range based on the target time, reference time and volatility coefficient.

[0048] Optionally, confirming the bonding parameter set based on a reference pressure range, a reference ultrasound range, and a reference time range includes:

[0049] The pressure sampling interval is calculated based on the preset number of samples and the reference pressure range. The calculation formula is as follows:

[0050] ;

[0051] in, is the pressure sampling interval, and are the maximum value and the minimum value of the reference pressure range, respectively. is the number of samples;

[0052] Performing a uniform sampling operation on the reference pressure range based on the pressure sampling interval to obtain a sampled pressure set;

[0053] Acquire a sampling ultrasonic frequency set based on the sampling number and the reference ultrasonic range, and acquire a sampling time set based on the sampling number and the reference time range;

[0054] A bonding parameter set is obtained based on the sampling pressure set, the sampling ultrasonic frequency set and the sampling time set, wherein the bonding parameter set is a Cartesian product of the sampling pressure set, the sampling ultrasonic frequency set and the sampling time set.

[0055] Optionally, the step of performing a bonding stability test on the MOS tube using a temperature tester and a semiconductor tester to obtain a bonding success degree includes:

[0056] The initial source, the initial drain and the initial gate of the MOS tube are connected to the source terminal, the drain terminal and the gate terminal of the semiconductor tester respectively to obtain a target tester;

[0057] Use the target tester to test the voltage threshold of the MOS tube to obtain the transistor voltage threshold;

[0058] Using a temperature tester to obtain an initial operating temperature of the MOS tube, using a target tester to set a voltage between an initial drain and an initial source of the MOS tube as a preset first operating voltage to obtain a first MOS tube, and using the target tester to set a voltage between an initial gate and an initial source of the first MOS tube as a preset second operating voltage to obtain a second MOS tube, wherein the first operating voltage is greater than the second operating voltage, and the second operating voltage is greater than a transistor voltage threshold;

[0059] Taking the time of obtaining the second MOS tube as the starting point and recording the time in real time, obtaining the crystal working time, until the crystal working time reaches a preset working time threshold, using a temperature tester to obtain the termination working temperature of the second MOS tube;

[0060] The bonding success is calculated based on the transistor voltage threshold, operating time threshold, initial operating temperature, and final operating temperature. The calculation formula is as follows:

[0061] ;

[0062] in, is the bonding success rate, is the transistor voltage threshold, is the preset standard voltage threshold, and are the final operating temperature and the initial operating temperature, respectively. is the working time threshold, refers to the hyperbolic tangent function, Refers to taking the absolute value.

[0063] Optionally, the step of performing a voltage threshold test on a MOS transistor using a target tester to obtain a transistor voltage threshold comprises:

[0064] Using a target tester, setting the voltage between the initial drain and the initial source of the MOS tube to a preset first fixed voltage to obtain a primary MOS tube;

[0065] Using a target tester, setting the voltage between the initial gate and the initial source of the primary MOS tube to a preset second fixed voltage to obtain an intermediate MOS tube;

[0066] Using a target tester to read the current between the initial drain and the initial source of the intermediate MOS tube to obtain a source-drain current, recording the time when the source-drain current is obtained to obtain a current time, and integrating the source-drain current, the second fixed voltage and the current time into a current data packet;

[0067] The current data packet is stored in a pre-built current memory to obtain a target memory, and an update voltage is determined based on a preset superimposed voltage and a second fixed voltage, wherein the update voltage is the sum of the superimposed voltage and the second fixed voltage;

[0068] The target memory is used as a current memory, the update voltage is used as a second fixed voltage, and the intermediate MOS tube is used as a primary MOS tube, and the step of using the target tester to set the voltage between the initial gate and the initial source of the primary MOS tube to the preset second fixed voltage is returned until the update voltage is greater than the preset termination voltage threshold, and n current data packets are extracted from the target memory;

[0069] Sort the n current data packets according to the order of the current time in the current data packets from earliest to latest to obtain a current data packet sequence;

[0070] Extracting n source-drain currents from the n current data packets, and sorting the n source-drain currents according to the order of the current data packets corresponding to the source-drain currents in the current data packet sequence, to obtain a source-drain current sequence;

[0071] The transistor voltage threshold is determined based on the source-drain current sequence.

[0072] Optionally, determining the transistor voltage threshold based on the source-drain current sequence comprises:

[0073] Extracting an i-th source-drain current from the source-drain current sequence, wherein an initial value of i is 1, and confirming an i+1-th source-drain current in the source-drain current sequence based on the i-th source-drain current, wherein the i+1-th source-drain current is adjacent to the i-th source-drain current in the source-drain current sequence and lags behind the i-th source-drain current;

[0074] Calculating a source-drain current difference according to the i-th source-drain current and the i+1-th source-drain current, wherein the source-drain current difference is an absolute difference between the i-th source-drain current and the i+1-th source-drain current;

[0075] comparing the source-drain current difference with a preset current difference threshold;

[0076] If the source-drain current difference is greater than or equal to the current phase difference threshold, the second fixed voltage corresponding to the (i+1)th source-drain current is used as the transistor voltage threshold;

[0077] If the source-drain current difference is less than the current phase difference threshold, set I=i+1, take I as i, and return to the step of extracting the i-th source-drain current from the source-drain current sequence until the source-drain current difference is greater than or equal to the current phase difference threshold.

[0078] To achieve the above object, the present invention further provides a bonding parameter optimization system for a metal oxide semiconductor field effect transistor, comprising:

[0079] A bonding material preparation module, used to obtain a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity tester, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor;

[0080] A bonding metal analysis module is used to perform a performance analysis operation on a bonding metal wire set using a material analysis mechanism to obtain bonding difficulty and bonding stability, and to determine a reference pressure range, a reference ultrasonic range, and a reference time range based on the bonding difficulty and bonding stability;

[0081] A bonding parameter test module is used to confirm a bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal, confirm a bonding parameter set based on a reference pressure range, a reference ultrasonic range and a reference time range, perform the following operations on each bonding parameter set in the bonding parameter set, perform a bonding operation on a pre-constructed initial transistor based on the bonding parameter set, a bonding metal wire set and a bonding machine to obtain a bonding transistor, package the bonding transistor to obtain a MOS tube, wherein the MOS tube includes: an initial source, an initial drain and an initial gate, perform a bonding stability test on the MOS tube using a temperature tester and a semiconductor tester to obtain a bonding success degree;

[0082] The bonding parameter confirmation module is used to summarize the bonding success degrees to obtain multiple bonding success degrees, and confirm the maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the largest bonding success degree among the multiple bonding success degrees, and the bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semiconductor field effect transistor.

[0083] In order to solve the above problem, the present invention further provides an electronic device, the electronic device comprising:

[0084] a memory storing at least one instruction; and

[0085] The processor executes the instructions stored in the memory to implement the bonding parameter optimization method for metal oxide semi-conductor field effect transistor described above.

[0086] In order to solve the above problems, the present invention also provides a computer-readable storage medium, in which at least one instruction is stored. The at least one instruction is executed by a processor in an electronic device to implement the above-mentioned bonding parameter optimization method for metal oxide semiconductor field effect transistors.

[0087] The present invention is to solve the problem described in the background technology. The present invention obtains a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity measuring instrument, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor. It can be seen that the embodiment of the present invention obtains the bonding metal wire set and confirms the material analysis mechanism, thereby providing basic materials and devices for subsequent performance analysis of the bonding metal wire set, and then uses the material analysis mechanism to perform performance analysis operations on the bonding metal wire set to obtain the bonding difficulty and bonding stability, and confirms the reference pressure range, reference ultrasonic range and reference time range based on the bonding difficulty and bonding stability. It can be seen that the embodiment of the present invention obtains the bonding metal wire set and confirms the material analysis mechanism, thereby providing basic materials and devices for subsequent performance analysis of the bonding metal wire set, and then uses the material analysis mechanism to perform performance analysis operations on the bonding metal wire set to obtain the bonding difficulty and bonding stability, and confirms the reference pressure range, reference ultrasonic range and reference time range based on the bonding difficulty and bonding stability. The bonding difficulty and bonding stability are calculated, so as to match the best reference pressure range, reference ultrasonic range and reference time range for the bonding metal wire set, narrow the range for the subsequent confirmation of the bonding parameter set, improve the speed of bonding parameter optimization, and confirm the bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal. It can be seen that the embodiment of the present invention provides a basic device for the subsequent bonding operation of the pre-constructed initial transistor and the bonding stability test of the MOS tube by confirming the bonding processing mechanism, confirms the bonding parameter set based on the reference pressure range, the reference ultrasonic range and the reference time range, and performs a bonding process on each bonding parameter in the bonding parameter set. The array performs the following operations: based on the bonding parameter group, the bonding metal wire set and the bonding machine, a bonding operation is performed on the pre-constructed initial transistor to obtain a bonding transistor, and the bonding transistor is packaged to obtain a MOS tube, wherein the MOS tube includes: an initial source, an initial drain and an initial gate. It can be seen that the embodiment of the present invention confirms the bonding parameter group set through the reference pressure range, the reference ultrasonic range and the reference time range, and produces different MOS tubes according to different bonding parameter groups, and then performs a bonding stability test on the MOS tube, so as to compare the difference between the bonding effects of different bonding parameter groups, and uses a temperature tester and a semiconductor tester to perform a bonding stability test on the MOS tube to obtain the bonding success degree. It can be seen that the embodiment of the present invention confirms the bonding parameter group set through the reference pressure range, the reference ultrasonic range and the reference time range, and produces different MOS tubes according to different bonding parameter groups. The bonding stability test of the transistor is performed, and the bonding success degree is used to accurately reflect the reliability of the connection between the gate, source and drain on the initial transistor and the pins of the packaging substrate, so that the best target parameter group is selected later by using multiple bonding success degrees, and the bonding success degrees are summarized to obtain multiple bonding success degrees. The maximum bonding success degree is confirmed based on the multiple bonding success degrees, wherein the maximum bonding success degree is the largest bonding success degree among the multiple bonding success degrees, and the bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semi-conductor field effect transistor. It can be seen that the embodiment of the present invention successfully screens out the best parameter combination by using the bonding parameter group corresponding to the maximum bonding success degree as the target parameter group, and completes the optimization of the bonding parameters.Since the target parameter group is the most suitable parameter combination for bonding metal wires and bonding machines, when a factory uses the target parameter group to produce MOSFETs, the yield rate of MOSFETs can be effectively improved. Therefore, the present invention can improve the accuracy of optimizing the bonding parameters of MOSFETs and improve the yield rate of MOSFETs. BRIEF DESCRIPTION OF THE DRAWINGS

[0088] Figure 1 A schematic flow chart of a bonding parameter optimization method for a metal oxide semi-conductor field effect transistor provided in one embodiment of the present invention;

[0089] Figure 2 A functional module diagram of a bonding parameter optimization system for a metal oxide semiconductor field effect transistor provided by an embodiment of the present invention;

[0090] Figure 3 A schematic structural diagram of an electronic device for implementing the bonding parameter optimization method for a metal oxide semi-conductor field effect transistor provided by an embodiment of the present invention.

[0091] Description of reference numerals:

[0092] 1. Electronic device; 10. Processor; 11. Memory; 12. Bus.

[0093] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0094] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0095] The embodiment of the present application provides a bonding parameter optimization method for a metal oxide semiconductor field effect transistor. The execution subject of the bonding parameter optimization method for a metal oxide semiconductor field effect transistor includes but is not limited to at least one of the electronic devices such as a server and a terminal that can be configured to execute the method provided by the embodiment of the present application. In other words, the bonding parameter optimization method for a metal oxide semiconductor field effect transistor can be executed by software or hardware installed in a terminal device or a server device, and the software can be a blockchain platform. The server includes but is not limited to: a single server, a server cluster, a cloud server or a cloud server cluster, etc.

[0096] Reference Figure 1 FIG. 1 is a flow chart of a bonding parameter optimization method for a metal oxide semiconductor field effect transistor provided by an embodiment of the present invention. In this embodiment, the bonding parameter optimization method for a metal oxide semiconductor field effect transistor includes:

[0097] S1. Obtain a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity measuring instrument, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor.

[0098] In the embodiment of the present invention, the metal oxide semiconductor field effect transistor refers to a metal oxide semiconductor field effect transistor.

[0099] It should be understood that the manufacturing process of the metal oxide semi-conductor field effect transistor is: placing the initial transistor pre-produced by the factory on the packaging substrate, and connecting the gate, source and drain on the initial transistor to the pins of the packaging substrate through bonding metal wires, and finally packaging the connected initial transistor to obtain the metal oxide semi-conductor field effect transistor. The process of connecting the gate, source and drain on the initial transistor to the pins of the packaging substrate through bonding metal wires is the bonding process, and the optimization of the bonding parameters in the embodiment of the present invention is to optimize the parameters of the bonding machine during the bonding process. Please refer to the subsequent embodiments for the specific optimized parameters. The initial transistor is a bare chip pre-produced by the factory for manufacturing metal oxide semi-conductor field effect transistors.

[0100] It should be explained that a bonding metal wire set is a set consisting of multiple bonding metal wires. A bonding metal wire refers to a wire made of metal and used to bond a metal oxide semiconductor field effect transistor. Optionally, a Micro-Chen semiconductor bonding wire is used as the bonding metal wire.

[0101] It is understandable that the material analysis mechanism is a device that integrates a tensile tester, an elasticity tester, a test power supply and a thermal conductivity meter. The tensile tester is a device for performing tensile tests on metal wire samples, and the tensile tester includes: a fixed fixture, a tensile rod, a tension sensor and a displacement sensor. The fixed fixture is a fixture used to fix the metal wire sample in the tensile tester. The tensile rod is a mechanical rod in the tensile tester that can stretch the fixed metal wire. The tension sensor is used to monitor the tensile force applied by the tensile rod when stretching the fixed metal wire. The displacement sensor is used to monitor the displacement of the tensile rod when the tensile rod of the tensile tester stretches the fixed metal wire. The elasticity tester is an instrument that can measure the elastic modulus of the metal wire sample. The test power supply is a power supply for performing resistance heat generation test on the metal wire sample. The thermal conductivity meter is an instrument that can measure the thermal conductivity of the metal wire sample. Optionally, the Shanghai Sonton Instrument WDW-1 electronic universal testing machine is used as the tensile tester. The Meichuangtu dynamic elastic modulus measuring instrument is used as the elasticity tester. The DRJ-I metal high temperature thermal conductivity tester produced by Qunhong Instruments was used as the thermal conductivity measuring instrument.

[0102] S2. Use a material analysis mechanism to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, and based on the bonding difficulty and bonding stability, determine a reference pressure range, a reference ultrasonic range, and a reference time range.

[0103] In detail, the material analysis mechanism is used to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, including:

[0104] Extracting bonding metal wires from the bonding metal wire set, performing a cutting operation on the bonding metal wires, and obtaining metal wire samples;

[0105] Obtaining the metal wire diameter of the metal wire sample, and performing a tensile test on the metal wire sample using a tensile testing machine in a material analysis institution to obtain the metal wire elongation and ultimate tensile force;

[0106] Using an elasticity tester to obtain the elastic modulus of the metal wire sample, using a test power supply to perform a resistance heat generation test on the metal wire sample to obtain the temperature rise rate of the metal wire, and using a thermal conductivity tester to obtain the thermal conductivity of the metal wire sample;

[0107] The bonding difficulty is calculated based on the thermal conductivity and elongation of the metal wire. The calculation formula is as follows:

[0108] ;

[0109] in, is the bonding difficulty, is the thermal conductivity of the metal wire, is the metal wire elongation, is the natural logarithm;

[0110] The bonding stability is calculated based on the elastic modulus of the metal wire, the temperature rise rate of the metal wire, the ultimate extension force and the diameter of the metal wire. The calculation formula is as follows:

[0111] ;

[0112] in, For bonding stability, is the ultimate extension force, is the wire diameter, is the elastic modulus of the metal wire, is the temperature rise rate of the metal wire, is a natural constant.

[0113] It should be understood that the cutting operation performed on the bonding metal wire to obtain the metal wire sample means: cutting a certain length of the bonding metal wire as the metal wire sample. The metal wire diameter refers to the diameter of the metal wire sample. Optionally, the metal wire diameter of the metal wire sample is obtained by a laser diameter gauge.

[0114] It should be explained that the elastic modulus of the metal wire refers to the elastic modulus of the metal wire sample, and the method of obtaining the elastic modulus of the metal wire sample by using an elastic tester refers to measuring the elastic modulus of the metal wire sample by using an elastic tester, and the technology of measuring the elastic modulus of the metal wire sample by using an elastic tester is a prior art and will not be described in detail here. The thermal conductivity of the metal wire refers to the thermal conductivity of the metal wire sample, and the method of obtaining the thermal conductivity of the metal wire sample by using a thermal conductivity measuring instrument refers to measuring the thermal conductivity of the metal wire sample by using a thermal conductivity measuring instrument, and the technology of measuring the thermal conductivity of the metal wire sample by using a thermal conductivity measuring instrument is a prior art and will not be described in detail here.

[0115] It should be understood that during the bonding process, when the gate, source and drain on the initial transistor are connected to the pins of the packaging substrate through the bonding metal wire, it is necessary to apply a certain amount of heat, pressure and ultrasound to the bonding metal wire through the bonding machine, so that the bonding metal wire forms a stable connection with the gate, source, drain and pin under the combined action of heat, pressure and ultrasound. The technology for the bonding metal wire to form a stable connection with the gate, source, drain and pin under the combined action of heat, pressure and ultrasound is the prior art and will not be repeated here. The higher the thermal conductivity of the bonding metal wire, the better the heat transfer effect of the bonding metal wire to the bonding machine, and the higher the elongation of the metal wire, the easier it is for the bonding metal wire to deform under pressure. Therefore, the bonding difficulty reflects the difficulty of the subsequent bonding machine in performing the bonding operation on the initial transistor. The greater the bonding difficulty, the higher the difficulty of the bonding machine in performing the bonding operation on the initial transistor, and the more difficult it is for the bonding metal wire to form a stable connection with the gate, source, drain and pin under the action of heat, pressure and ultrasound. Since the gate, source and drain on the initial transistor are connected to the pins of the packaging substrate through bonding metal wires, the bonding stability calculated by the metal wire elastic modulus, the metal wire temperature rise rate, the ultimate extension tension and the metal wire diameter reflects the stability of the connection between the gate, source and drain on the initial transistor and the pins of the packaging substrate after bonding. The higher the bonding stability, the more stable the connection between the gate, source and drain on the initial transistor and the pins of the packaging substrate after bonding.

[0116] In detail, the method of using a tensile testing machine in a material analysis mechanism to perform a tensile test on a metal wire sample to obtain the elongation and ultimate tensile force of the metal wire includes:

[0117] confirming the fixed metal wire based on the metal wire sample, the fixing fixture of the tensile testing machine and the tensile rod, and confirming the initial gauge length of the fixed metal wire;

[0118] The fixed metal wire is stretched by a stretching rod of a tensile testing machine, and a tensile force sensor and a displacement sensor are used to monitor in real time the tensile force and the tensile displacement of the fixed metal wire when the tensile rod of the tensile testing machine is stretched, until the fixed metal wire breaks, and the tensile force monitored by the tensile force sensor when the fixed metal wire breaks is used as the limit extension force, and the tensile displacement monitored by the displacement sensor when the fixed metal wire breaks is used as the target displacement;

[0119] The wire elongation is calculated using the initial gauge length and target displacement. The calculation formula is as follows:

[0120] ;

[0121] in, is the target displacement, is the initial gauge length.

[0122] It should be explained that the initial gauge length refers to the gauge length of the fixed metal wire. The tensile force refers to the tensile force applied by the tensile rod of the tensile testing machine when stretching the fixed metal wire. The tensile displacement refers to the displacement of the tensile rod when the tensile rod of the tensile testing machine stretches the fixed metal wire. For example, when the tensile rod stretches the fixed metal wire, the tensile rod moves 2 cm, then the tensile displacement is 2 cm.

[0123] It is understood that the wire elongation reflects the elongation of the wire sample.

[0124] Exemplarily, when it is confirmed that one end of the metal wire sample is fixed on the fixing fixture and the other end is connected to the stretching rod of the tensile testing machine, a fixed metal wire is obtained, and then the stretching rod is controlled to move slowly so as to drive the fixed metal wire to gradually lengthen until the fixed metal wire breaks, and the tensile force applied to the fixed metal wire by the stretching rod monitored by the tension sensor when the fixed metal wire breaks is used as the limit extension tensile force, and the displacement of the stretching rod monitored by the displacement sensor when the fixed metal wire breaks is used as the target displacement. The use of the stretching rod of the tensile testing machine to stretch the fixed metal wire is the control of the stretching rod to move slowly so as to drive the fixed metal wire to gradually lengthen.

[0125] In detail, the method of performing a resistance heat generation test on a metal wire sample using a test power supply to obtain a temperature rise rate of the metal wire includes:

[0126] Performing a detection operation on the metal wire sample using a pre-built temperature sensor to obtain an initial sample temperature;

[0127] A test path is constructed based on the metal wire sample and the test power supply, the test power supply in the test path is started, the time of starting the test power supply in the test path is used as the starting point and the time is recorded in real time to obtain the power-on time, and the metal wire sample in the test path is tested for power-on by using the started test power supply until the power-on time reaches a preset power-on time threshold, and the metal wire sample in the test path after the power-on test is performed a detection operation by using a temperature sensor to obtain the heat generation temperature;

[0128] The temperature rise rate of the metal wire is calculated based on the initial sample temperature, power-on time threshold and heat generation temperature. The calculation formula is as follows:

[0129] ;

[0130] in, is the heat generation temperature, is the initial sample temperature, is the power-on time threshold.

[0131] It should be explained that the temperature sensor is a sensor that can detect the temperature of the surface of the metal wire sample. The initial sample temperature refers to the temperature of the surface of the metal wire sample.

[0132] It is understandable that the construction of the test path based on the metal wire sample and the test power supply means: connecting one end of the metal wire sample to the positive electrode of the test power supply through a wire, and connecting the other end of the metal wire sample to one end of a pre-constructed initial resistor through a wire, and then connecting the other end of the initial resistor to the negative electrode of the test power supply, thereby forming a line starting from the positive electrode of the test power supply, passing through the metal wire sample and the initial resistor, and reaching the negative electrode of the test power supply, and the line is the test path. Wherein, the initial resistor is a resistor with a resistance value less than 10 ohms.

[0133] Exemplarily, the time to start the test power supply in the test path is 10:00, then 10:00 is used as the starting point and the time is recorded in real time. At 10:02, the power-on time is 2 minutes, and at 10:03, the power-on time is 3 minutes. The power-on test of the metal wire sample in the test path using the started test power supply refers to: using the started test power supply to apply voltage to the metal wire sample in the test path. If the power-on threshold is 5 minutes, then at 10:05, the temperature sensor is used to measure the surface temperature of the metal wire sample in the test path after the power-on test to obtain the heat generation temperature.

[0134] It is understandable that the metal wire temperature rise rate reflects the rate at which the temperature of the metal wire sample surface changes when the metal wire sample conducts current. The greater the metal wire temperature rise rate, the faster the temperature of the metal wire sample surface changes when the metal wire sample conducts current.

[0135] In detail, the determination of the reference pressure range, the reference ultrasonic range and the reference time range based on the bonding difficulty and the bonding stability includes:

[0136] The target pressure is calculated based on the bonding difficulty. The calculation formula is as follows:

[0137] ;

[0138] in, is the target pressure, is the preset reference bonding difficulty, is the preset reference pressure;

[0139] Calculating the fluctuation pressure according to the reference pressure and the preset fluctuation coefficient, wherein the fluctuation pressure is the product of the reference pressure and the fluctuation coefficient;

[0140] Determine a reference maximum pressure and a reference minimum pressure based on the target pressure and the fluctuating pressure, wherein the reference maximum pressure is the absolute difference between the target pressure and the fluctuating pressure, and the reference minimum pressure is the sum of the target pressure and the fluctuating pressure;

[0141] Determine a reference pressure range based on a reference maximum pressure and a reference minimum pressure, wherein the minimum value of the reference pressure range is the reference minimum pressure, and the maximum value of the reference pressure range is the reference maximum pressure;

[0142] Obtaining a reference ultrasonic range based on a reference bonding difficulty, a preset reference ultrasonic frequency, a fluctuation coefficient, and a bonding difficulty;

[0143] The target time is calculated based on the bond stability, and the calculation formula is as follows:

[0144] ;

[0145] in, is the target time, is the preset reference bonding stability, is the preset reference time;

[0146] Get the reference time range based on the target time, reference time and volatility coefficient.

[0147] Preferably, the reference pressure is 0.1N, the reference ultrasonic frequency is 20kHz, the reference time is 100ms, and the fluctuation coefficient is 0.1. The reference bonding difficulty and the reference bonding stability are both values ​​manually set by the factory technicians based on production experience. Optionally, the factory technicians use the average value of multiple bonding difficulties of multiple bonding metal wires used in the past as the reference bonding difficulty, and use the average value of multiple bonding stabilities of multiple bonding metal wires used in the past as the reference bonding stability.

[0148] It is understandable that the method for obtaining the reference ultrasonic range based on the reference bonding difficulty, the preset reference ultrasonic frequency, the fluctuation coefficient and the bonding difficulty is the same as the method for obtaining the reference pressure range using the reference bonding difficulty, the reference pressure, the fluctuation coefficient and the bonding difficulty, and will not be described in detail here. The method for obtaining the reference time range based on the target time, the reference time and the fluctuation coefficient is the same as the method for obtaining the reference pressure range using the target pressure, the reference pressure and the fluctuation coefficient, and will not be described in detail here.

[0149] It should be understood that when the bonding difficulty increases, the pressure and the frequency of the ultrasonic wave applied by the bonding machine to the bonding wire during the bonding process should be increased accordingly to ensure that the bonding achieves the desired effect. When the bonding stability decreases, the time for the bonding machine to apply heat, pressure and ultrasonic wave to the bonding wire during the bonding process should be appropriately increased to ensure the stability of the bonding process. Therefore, the embodiment of the present invention matches the bonding wire with the best reference pressure range, reference ultrasonic range and reference time range according to the bonding difficulty and bonding stability corresponding to the bonding wire, thereby narrowing the range for the subsequent confirmation of the bonding parameter set and improving the speed of bonding parameter optimization.

[0150] It should be explained that the reference pressure range, reference ultrasonic range and reference time range are respectively the range of pressure applied to the bonding metal wire, the range of ultrasonic frequency applied to the bonding metal wire and the range of time for a single bonding process that the bonding machine can choose when performing a bonding operation on the pre-built initial transistor. Among them, a single bonding process refers to the entire process of the bonding machine connecting a gate, a source or a drain on the initial transistor to a pin of the packaging substrate.

[0151] S3. Identify a bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal.

[0152] It should be explained that the bonding processing mechanism is a device that integrates a bonding machine, a temperature tester and a semiconductor tester. Optionally, a Weichen ultrasonic gold wire welding machine is used as a bonding machine. The temperature tester is an instrument that can detect the temperature of the surface of the MOS tube. The semiconductor tester is an instrument used to perform bonding stability tests on MOS tubes. Optionally, a Pusais SPA6100 semiconductor parameter analyzer is used as a semiconductor tester. The gate terminal, the drain terminal and the source terminal are respectively the ports in the semiconductor tester for connecting the initial gate, the initial drain and the initial source of the MOS tube.

[0153] S4. Confirm the bonding parameter set based on the reference pressure range, the reference ultrasonic range and the reference time range, and perform the following operations on each bonding parameter set in the bonding parameter set: perform a bonding operation on the pre-constructed initial transistor based on the bonding parameter set, the bonding metal wire set and the bonding machine to obtain a bonded transistor, and package the bonded transistor to obtain a MOS tube, wherein the MOS tube includes: an initial source, an initial drain and an initial gate.

[0154] In detail, the step of confirming a bonding parameter set based on a reference pressure range, a reference ultrasound range, and a reference time range includes:

[0155] The pressure sampling interval is calculated based on the preset number of samples and the reference pressure range. The calculation formula is as follows:

[0156] ;

[0157] in, is the pressure sampling interval, and are the maximum value and the minimum value of the reference pressure range, respectively. is the number of samples;

[0158] Performing a uniform sampling operation on the reference pressure range based on the pressure sampling interval to obtain a sampled pressure set;

[0159] Acquire a sampling ultrasonic frequency set based on the sampling number and the reference ultrasonic range, and acquire a sampling time set based on the sampling number and the reference time range;

[0160] A bonding parameter set is obtained based on the sampling pressure set, the sampling ultrasonic frequency set and the sampling time set, wherein the bonding parameter set is a Cartesian product of the sampling pressure set, the sampling ultrasonic frequency set and the sampling time set.

[0161] Preferably, the number of samples is 5.

[0162] Exemplarily, if the pressure sampling interval is 0.002N and the reference pressure range is (0.10N, 0.11N), the sampled pressure set is {0.102N, 0.104N, 0.106N, 0.108N, 0.11N}.

[0163] It should be understood that the method of obtaining a sampling ultrasonic frequency set based on the number of samples and a reference ultrasonic range and the method of obtaining a sampling time set based on the number of samples and a reference time range are the same as the method of obtaining a sampling pressure set using the number of samples and a reference pressure range, and will not be repeated here.

[0164] It should be explained that the bonding parameter set includes multiple bonding parameter sets. For example, if the sampling pressure set is {0.102N, 0.104N}, the sampling ultrasonic frequency set is {20kHz, 21kHz}, and the sampling time set is {100ms, 101ms}, then the bonding parameter set is {[0.102N, 20kHz, 100ms], [0.102N, 20kHz, 101ms], [0.102N, 21kHz, 100ms], [0.102N, 21kHz, 101ms], [0.104N, 20kHz, 100ms], [0.104N, 20kHz, 101ms], [0.104N, 21kHz, 100ms], [0.104N, 21kHz, 101ms]}.

[0165] It should be understood that the bonding operation performed on the pre-built initial transistor based on the bonding parameter group, the bonding wire set and the bonding machine refers to: placing the initial transistor on the packaging substrate, and inputting the bonding parameter group into the bonding machine, and using the bonding machine with the bonding parameter group input to connect the gate, source and drain on the initial transistor to the pins of the packaging substrate through the bonding wires. Exemplarily, the sampling pressure in the bonding parameter group is 0.102N, the sampling ultrasonic frequency is 20kHz, and the sampling time is 100ms. After the bonding parameter group is input into the bonding machine, the pressure of the bonding machine during bonding is set to 0.102N, the ultrasonic frequency is set to 20kHz, and the duration of a single bonding process is set to 100ms. And the technology of using the bonding machine with the bonding parameter group input to connect the gate, source and drain on the initial transistor to the pins of the packaging substrate through the bonding wires is a prior art and will not be repeated here.

[0166] It should be noted that the gate, source and drain on the initial transistor correspond one-to-one to the initial gate, source and drain of the MOS tube after bonding and packaging. The MOS tube is a metal oxide semiconductor field effect transistor, and the initial source, drain and gate are the source, drain and gate of the metal oxide semiconductor field effect transistor respectively. The technology of packaging the bonded transistor to obtain the MOS tube is all existing technology and will not be repeated here.

[0167] S5. Use a temperature tester and a semiconductor tester to perform a bonding stability test on the MOS tube to obtain a bonding success rate.

[0168] In detail, the bonding stability test of the MOS tube is performed using a temperature tester and a semiconductor tester to obtain the bonding success degree, including:

[0169] The initial source, the initial drain and the initial gate of the MOS tube are connected to the source terminal, the drain terminal and the gate terminal of the semiconductor tester respectively to obtain a target tester;

[0170] Use the target tester to test the voltage threshold of the MOS tube to obtain the transistor voltage threshold;

[0171] Using a temperature tester to obtain an initial operating temperature of the MOS tube, using a target tester to set a voltage between an initial drain and an initial source of the MOS tube as a preset first operating voltage to obtain a first MOS tube, and using the target tester to set a voltage between an initial gate and an initial source of the first MOS tube as a preset second operating voltage to obtain a second MOS tube, wherein the first operating voltage is greater than the second operating voltage, and the second operating voltage is greater than a transistor voltage threshold;

[0172] Taking the time of obtaining the second MOS tube as the starting point and recording the time in real time, obtaining the crystal working time, until the crystal working time reaches a preset working time threshold, using a temperature tester to obtain the termination working temperature of the second MOS tube;

[0173] The bonding success is calculated based on the transistor voltage threshold, operating time threshold, initial operating temperature, and final operating temperature. The calculation formula is as follows:

[0174] ;

[0175] in, is the bonding success rate, is the transistor voltage threshold, is the preset standard voltage threshold, and are the final operating temperature and the initial operating temperature, respectively. is the working time threshold, refers to the hyperbolic tangent function, Refers to taking the absolute value.

[0176] It should be explained that the target tester is a semiconductor tester after the source terminal, drain terminal and gate terminal are respectively connected to the initial source, initial drain and initial gate of the MOS tube. The initial operating temperature refers to the temperature of the surface of the MOS tube.

[0177] It should be understood that, since the source terminal, drain terminal and gate terminal of the target tester are respectively connected to the initial source, initial drain and initial gate of the MOS tube, the target tester can control the voltage between the initial drain and the initial source of the MOS tube and the voltage between the initial gate and the initial source through its internal voltage source, and the technology of setting the voltage between the initial drain and the initial source of the MOS tube as the preset first working voltage by using the target tester and the technology of setting the voltage between the initial gate and the initial source of the first MOS tube as the preset second working voltage by using the target tester are both prior art and will not be described in detail here. Optionally, the first working voltage is 2V and the second working voltage is 5V.

[0178] Exemplarily, the time when the second MOS tube is obtained is 12:00, then 12:00 is used as the starting point and the time is recorded. At 12:02, the crystal working time is 2 minutes. If the working time threshold is 5 minutes, then at 12:05, the temperature of the surface of the second MOS tube is detected by a temperature tester to obtain the termination working temperature.

[0179] It should be understood that since the bonding process is the process of connecting the gate, source and drain on the initial transistor to the pins of the packaging substrate using bonding metal wires, the bonding success rate reflects the reliability of the connection between the gate, source and drain on the initial transistor and the pins of the packaging substrate. The higher the bonding success rate, the higher the reliability of the connection between the gate, source and drain on the initial transistor and the pins of the packaging substrate.

[0180] Exemplarily, a factory technician detects multiple transistor voltage thresholds of multiple MOSFETs that have been produced historically and passes the test, and uses an average value of the multiple transistor voltage thresholds as the standard voltage threshold.

[0181] In detail, the method of using a target tester to perform a voltage threshold test on a MOS tube to obtain a transistor voltage threshold includes:

[0182] Using a target tester, setting the voltage between the initial drain and the initial source of the MOS tube to a preset first fixed voltage to obtain a primary MOS tube;

[0183] Using a target tester, setting the voltage between the initial gate and the initial source of the primary MOS tube to a preset second fixed voltage to obtain an intermediate MOS tube;

[0184] Using a target tester to read the current between the initial drain and the initial source of the intermediate MOS tube to obtain a source-drain current, recording the time when the source-drain current is obtained to obtain a current time, and integrating the source-drain current, the second fixed voltage and the current time into a current data packet;

[0185] The current data packet is stored in a pre-built current memory to obtain a target memory, and an update voltage is determined based on a preset superimposed voltage and a second fixed voltage, wherein the update voltage is the sum of the superimposed voltage and the second fixed voltage;

[0186] The target memory is used as a current memory, the update voltage is used as a second fixed voltage, and the intermediate MOS tube is used as a primary MOS tube, and the step of using the target tester to set the voltage between the initial gate and the initial source of the primary MOS tube to the preset second fixed voltage is returned until the update voltage is greater than the preset termination voltage threshold, and n current data packets are extracted from the target memory;

[0187] Sort the n current data packets according to the order of the current time in the current data packets from earliest to latest to obtain a current data packet sequence;

[0188] Extracting n source-drain currents from the n current data packets, and sorting the n source-drain currents according to the order of the current data packets corresponding to the source-drain currents in the current data packet sequence, to obtain a source-drain current sequence;

[0189] The transistor voltage threshold is determined based on the source-drain current sequence.

[0190] It should be understood that the technology of using the target tester to set the voltage between the initial drain and the initial source of the MOS tube to a preset first fixed voltage and the technology of using the target tester to set the voltage between the initial gate and the initial source of the primary MOS tube to a preset second fixed voltage are both prior arts and will not be described in detail here. Optionally, the first fixed voltage is 10V and the second fixed voltage is 1V.

[0191] It is understandable that since the source terminal, drain terminal and gate terminal of the target tester are respectively connected to the initial source, initial drain and initial gate of the MOS tube, the target tester can read the current between the initial drain and initial source of the MOS tube through its internal ammeter.

[0192] It should be explained that the integration of the source-drain current, the second fixed voltage and the current time into a current data packet means that the data of the source-drain current, the second fixed voltage and the current time are stored in one data packet. The current memory is a memory for storing current data packets. The target memory is the current memory after the current data packets are stored. n is the number of current data packets in the target memory.

[0193] It can be understood that when the voltage between the initial gate and the initial source of the MOSFET does not reach the transistor voltage threshold, the initial source and the initial drain of the MOSFET are in a cut-off state, and when the voltage between the initial gate and the initial source of the MOSFET reaches the transistor voltage threshold, the initial source and the initial drain of the MOSFET are in a conduction state. The embodiment of the present invention continuously increases the voltage between the initial source and the initial drain starting from the second fixed voltage and monitors the source-drain current. When the initial source and the initial drain of the MOSFET suddenly change from the cut-off state to the conduction state, the source-drain current will suddenly change. The present invention monitors the source-drain current in the subsequent The source-drain current difference is calculated to determine the position where the source-drain current mutation occurs, thereby further determining the voltage between the initial gate and the initial source of the MOSFET when the initial source and the initial drain of the MOSFET suddenly change from the off state to the on state, thereby confirming the required transistor voltage threshold. The voltage between the initial gate and the initial source of the MOSFET when the initial source and the initial drain of the MOSFET suddenly change from the off state to the on state is the transistor voltage threshold. If there is a problem in the bonding process of the MOSFET, the transistor voltage threshold will differ from the preset standard voltage threshold. Therefore, the transistor voltage threshold can be used to evaluate the bonding success.

[0194] The key point is that the termination voltage threshold is set manually by the factory technicians, but when setting the termination voltage threshold, the termination voltage threshold must be much larger than the voltage required when the initial source and initial drain of the qualified metal oxide semi-field effect transistor produced by the factory are in the on state, so as to ensure that in the cycle process of using the target tester to test the voltage threshold of the MOS tube, the updated voltage can make the initial source and initial drain of the metal oxide semi-field effect transistor in the on state before reaching the termination voltage threshold, otherwise it will be impossible to measure the transistor voltage threshold corresponding to the sudden change of the source and drain current. Preferably, the termination voltage threshold is 10V and the superposition voltage is 0.5V.

[0195] Exemplarily, after setting the voltage between the initial drain and the initial source to 10V and the voltage between the initial gate and the initial source to 1V, the target tester is used to read the current between the initial drain and the initial source of the intermediate MOS tube, and the source-drain current is 1μA. If the time when the source-drain current is 1μA is 12:00, the current time is 12:00, and then 1V, 1μA and 12:00 are saved as data in the current data packet, and then the current data packet is stored in the current memory. If the superimposed voltage is 0.5V, the updated voltage is 1.5V, and the initial gate and the initial source are reset. The voltage between the electrodes is 1.5V, and the new source-drain current is read again as 2μA, and the new current time is recorded as 12:01, and 1.5V, 2μA and 12:01 are integrated into a new current data packet, and the current data packet is stored in the current memory again, and so on. If the termination voltage threshold is 10V, then after the voltage between the initial gate and the initial source is set to 10V, and the current data packet corresponding to the voltage between the initial gate and the initial source is 10V, all the current data packets previously stored are extracted from the current memory to obtain n current data packets.

[0196] In detail, the method of confirming the transistor voltage threshold based on the source-drain current sequence includes:

[0197] Extracting an i-th source-drain current from the source-drain current sequence, wherein an initial value of i is 1, and confirming an i+1-th source-drain current in the source-drain current sequence based on the i-th source-drain current, wherein the i+1-th source-drain current is adjacent to the i-th source-drain current in the source-drain current sequence and lags behind the i-th source-drain current;

[0198] Calculating a source-drain current difference according to the i-th source-drain current and the i+1-th source-drain current, wherein the source-drain current difference is an absolute difference between the i-th source-drain current and the i+1-th source-drain current;

[0199] comparing the source-drain current difference with a preset current difference threshold;

[0200] If the source-drain current difference is greater than or equal to the current phase difference threshold, the second fixed voltage corresponding to the (i+1)th source-drain current is used as the transistor voltage threshold;

[0201] If the source-drain current difference is less than the current phase difference threshold, set I=i+1, take I as i, and return to the step of extracting the i-th source-drain current from the source-drain current sequence until the source-drain current difference is greater than or equal to the current phase difference threshold.

[0202] Exemplarily, the source leakage current ranked first in the source leakage current sequence, that is, the first source leakage current, is extracted from the source leakage current sequence, and then the second source leakage current is confirmed based on the first source leakage current. If the first source leakage current is 1μA and the second source leakage current is 2μA, the source leakage current difference is 1μA. If the current difference threshold is 1mA, the source leakage current difference is less than the current difference threshold, then i becomes 2, and the step of extracting the i-th source leakage current from the source leakage current sequence is returned, that is, the source leakage current ranked second in the source leakage current sequence, that is, the second source leakage current, is extracted from the source leakage current sequence again, and then the second source leakage current and the third source leakage current are used to calculate a new source leakage current difference, and so on until the source leakage current difference is greater than or equal to the current difference threshold. If the source leakage current difference is greater than or equal to the current difference threshold, i=7, and the second fixed voltage corresponding to the eighth source leakage current in the current data packet is used as the transistor voltage threshold.

[0203] It should be understood that when the initial source and the initial drain of the metal oxide semi-conductor field effect transistor suddenly change from the off state to the on state, the source-drain current will suddenly change, and when the source-drain current suddenly changes, the difference between the i+1th source-drain current and the i-th source-drain current will also suddenly increase, that is, at this time the source-drain current difference will be greater than the current phase difference threshold. Therefore, the embodiment of the present invention confirms the transistor voltage threshold when the initial source and the initial drain of the metal oxide semi-conductor field effect transistor suddenly change from the off state to the on state by comparing the source-drain current difference with the preset current phase difference threshold.

[0204] S6. Summarize the bonding success degrees to obtain multiple bonding success degrees, and confirm the maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the maximum bonding success degree among the multiple bonding success degrees.

[0205] S7. Use the bonding parameter group corresponding to the maximum bonding success rate as the target parameter group to complete the bonding parameter optimization of the metal oxide semi-conductor field effect transistor.

[0206] It is understandable that one bonding parameter group corresponds to one bonding success degree, so the bonding parameter group corresponding to the maximum bonding success degree can be used as the target parameter group, and the target parameter group is the optimal parameter combination required by the metal oxide semiconductor field effect transistor production factory when bonding the metal oxide semiconductor field effect transistor.

[0207] The present invention is to solve the problem described in the background technology. The present invention obtains a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity measuring instrument, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor. It can be seen that the embodiment of the present invention obtains the bonding metal wire set and confirms the material analysis mechanism, thereby providing basic materials and devices for subsequent performance analysis of the bonding metal wire set, and then uses the material analysis mechanism to perform performance analysis operations on the bonding metal wire set to obtain the bonding difficulty and bonding stability, and confirms the reference pressure range, reference ultrasonic range and reference time range based on the bonding difficulty and bonding stability. It can be seen that the embodiment of the present invention obtains the bonding metal wire set and confirms the material analysis mechanism, thereby providing basic materials and devices for subsequent performance analysis of the bonding metal wire set, and then uses the material analysis mechanism to perform performance analysis operations on the bonding metal wire set to obtain the bonding difficulty and bonding stability, and confirms the reference pressure range, reference ultrasonic range and reference time range based on the bonding difficulty and bonding stability. The bonding difficulty and bonding stability are calculated, so as to match the best reference pressure range, reference ultrasonic range and reference time range for the bonding metal wire set, narrow the range for the subsequent confirmation of the bonding parameter set, improve the speed of bonding parameter optimization, and confirm the bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal. It can be seen that the embodiment of the present invention provides a basic device for the subsequent bonding operation of the pre-constructed initial transistor and the bonding stability test of the MOS tube by confirming the bonding processing mechanism, confirms the bonding parameter set based on the reference pressure range, the reference ultrasonic range and the reference time range, and performs a bonding process on each bonding parameter in the bonding parameter set. The array performs the following operations: based on the bonding parameter group, the bonding metal wire set and the bonding machine, a bonding operation is performed on the pre-constructed initial transistor to obtain a bonding transistor, and the bonding transistor is packaged to obtain a MOS tube, wherein the MOS tube includes: an initial source, an initial drain and an initial gate. It can be seen that the embodiment of the present invention confirms the bonding parameter group set through the reference pressure range, the reference ultrasonic range and the reference time range, and produces different MOS tubes according to different bonding parameter groups, and then performs a bonding stability test on the MOS tube, so as to compare the difference between the bonding effects of different bonding parameter groups, and uses a temperature tester and a semiconductor tester to perform a bonding stability test on the MOS tube to obtain the bonding success degree. It can be seen that the embodiment of the present invention confirms the bonding parameter group set through the reference pressure range, the reference ultrasonic range and the reference time range, and produces different MOS tubes according to different bonding parameter groups. The bonding stability test of the transistor is performed, and the bonding success degree is used to accurately reflect the reliability of the connection between the gate, source and drain on the initial transistor and the pins of the packaging substrate, so that the best target parameter group is selected later by using multiple bonding success degrees, and the bonding success degrees are summarized to obtain multiple bonding success degrees. The maximum bonding success degree is confirmed based on the multiple bonding success degrees, wherein the maximum bonding success degree is the largest bonding success degree among the multiple bonding success degrees, and the bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semi-conductor field effect transistor. It can be seen that the embodiment of the present invention successfully screens out the best parameter combination by using the bonding parameter group corresponding to the maximum bonding success degree as the target parameter group, and completes the optimization of the bonding parameters.Since the target parameter group is the most suitable parameter combination for bonding metal wires and bonding machines, when a factory uses the target parameter group to produce MOSFETs, the yield rate of MOSFETs can be effectively improved. Therefore, the present invention can improve the accuracy of optimizing the bonding parameters of MOSFETs and improve the yield rate of MOSFETs.

[0208] like Figure 2 , which is a functional module diagram of a bonding parameter optimization system for a metal oxide semiconductor field effect transistor provided by an embodiment of the present invention.

[0209] The bonding parameter optimization system 100 for MOS field effect transistors of the present invention can be installed in an electronic device. According to the functions to be implemented, the bonding parameter optimization system 100 for MOS field effect transistors can include a bonding raw material preparation module 101, a bonding metal analysis module 102, a bonding parameter test module 103 and a bonding parameter confirmation module 104. The module of the present invention can also be called a unit, which refers to a series of computer program segments that can be executed by an electronic device processor and can complete fixed functions, which are stored in the memory of the electronic device.

[0210] The bonding material preparation module 101 is used to obtain a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity tester, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor;

[0211] The bonding metal analysis module 102 is used to perform a performance analysis operation on the bonding metal wire set using a material analysis mechanism to obtain bonding difficulty and bonding stability, and to determine a reference pressure range, a reference ultrasonic range, and a reference time range based on the bonding difficulty and bonding stability;

[0212] The bonding parameter test module 103 is used to confirm the bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal, confirm the bonding parameter set based on the reference pressure range, the reference ultrasonic range and the reference time range, perform the following operations on each bonding parameter set in the bonding parameter set, perform a bonding operation on the pre-constructed initial transistor based on the bonding parameter set, the bonding metal wire set and the bonding machine to obtain a bonding transistor, package the bonding transistor to obtain a MOS tube, wherein the MOS tube includes: an initial source, an initial drain and an initial gate, perform a bonding stability test on the MOS tube using the temperature tester and the semiconductor tester to obtain a bonding success degree;

[0213] The bonding parameter confirmation module 104 is used to summarize the bonding success degrees to obtain multiple bonding success degrees, and confirm the maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the maximum bonding success degree among the multiple bonding success degrees, and the bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semiconductor field effect transistor.

[0214] In detail, the modules in the bonding parameter optimization system 100 for metal oxide semiconductor field effect transistors in the embodiment of the present invention are used in the same manner as described above. Figure 1 The same technical means are used as the bonding parameter optimization method for metal oxide semi-conductor field effect transistors described in, and can produce the same technical effects, so they will not be repeated here.

[0215] like Figure 3 , is a schematic diagram of the structure of an electronic device for implementing a bonding parameter optimization method for a metal oxide semiconductor field effect transistor provided by an embodiment of the present invention.

[0216] The electronic device 1 may include a processor 10, a memory 11 and a bus 12, and may also include a computer program stored in the memory 11 and executable on the processor 10, such as a bonding parameter optimization method program for a metal oxide semiconductor field effect transistor.

[0217] Among them, the memory 11 includes at least one type of readable storage medium, and the readable storage medium includes flash memory, mobile hard disk, multimedia card, card-type memory (for example: SD or DX memory, etc.), magnetic memory, disk, optical disk, etc. In some embodiments, the memory 11 can be an internal storage unit of the electronic device 1, such as a mobile hard disk of the electronic device 1. In other embodiments, the memory 11 can also be an external storage device of the electronic device 1, such as a plug-in mobile hard disk, a smart memory card (Smart Media Card, SMC), a secure digital (SecureDigital, SD) card, a flash card (Flash Card), etc. equipped on the electronic device 1. Further, the memory 11 also includes an internal storage unit of the electronic device 1 and an external storage device. The memory 11 can not only be used to store application software and various types of data installed in the electronic device 1, such as the code of the bonding parameter optimization method program for the metal oxide semiconductor field effect transistor, but also can be used to temporarily store data that has been output or is to be output.

[0218] The processor 10 may be composed of an integrated circuit in some embodiments, for example, a single packaged integrated circuit, or a plurality of packaged integrated circuits with the same or different functions, including one or more central processing units (CPUs), microprocessors, digital processing chips, graphics processors, and a combination of various control chips, etc. The processor 10 is the control core (Control Unit) of the electronic device, and uses various interfaces and lines to connect various components of the entire electronic device, and executes or executes programs or modules stored in the memory 11 (for example, a bonding parameter optimization method program for metal oxide semiconductor field effect transistors, etc.), and calls data stored in the memory 11 to execute various functions of the electronic device 1 and process data.

[0219] The bus 12 may be a peripheral component interconnect (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The bus 12 may be divided into an address bus, a data bus, a control bus, etc. The bus 12 is configured to realize connection and communication between the memory 11 and at least one processor 10, etc.

[0220] Figure 3 Only an electronic device with components is shown, and those skilled in the art will understand that Figure 3 The structure shown does not constitute a limitation on the electronic device 1, and may include fewer or more components than shown in the figure, or combine certain components, or arrange the components differently.

[0221] For example, although not shown, the electronic device 1 may also include a power source (such as a battery) for supplying power to various components. Preferably, the power source may be logically connected to the at least one processor 10 through a power management device, so that the power management device can realize functions such as charging management, discharging management, and power consumption management. The power source may also include one or more DC or AC power sources, recharging devices, power failure detection circuits, power converters or inverters, power status indicators, and other arbitrary components. The electronic device 1 may also include a variety of sensors, Bluetooth modules, Wi-Fi modules, etc., which will not be repeated here.

[0222] Furthermore, the electronic device 1 may also include a network interface. Optionally, the network interface may include a wired interface and / or a wireless interface (such as a WI-FI interface, a Bluetooth interface, etc.), which is generally used to establish a communication connection between the electronic device 1 and other electronic devices.

[0223] Optionally, the electronic device 1 may further include a user interface, which may be a display, an input unit (such as a keyboard), or a standard wired interface or a wireless interface. Optionally, in some embodiments, the display may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, and an OLED (Organic Light-Emitting Diode) touch device. The display may also be appropriately referred to as a display screen or a display unit, which is used to display information processed in the electronic device 1 and to display a visual user interface.

[0224] The bonding parameter optimization method program for metal oxide semiconductor field effect transistors stored in the memory 11 in the electronic device 1 is a combination of multiple instructions. When running in the processor 10, it can achieve:

[0225] Acquire a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity tester, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor;

[0226] Using a material analysis mechanism to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, and based on the bonding difficulty and bonding stability, determining a reference pressure range, a reference ultrasonic range, and a reference time range;

[0227] Identify a bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal;

[0228] The bonding parameter set is confirmed based on the reference pressure range, the reference ultrasonic range and the reference time range, and the following operations are performed on each bonding parameter set in the bonding parameter set:

[0229] Performing a bonding operation on the pre-built initial transistor based on the bonding parameter group, the bonding metal wire set and the bonding machine to obtain a bonded transistor, and packaging the bonded transistor to obtain a MOS transistor, wherein the MOS transistor includes: an initial source, an initial drain and an initial gate;

[0230] Use temperature tester and semiconductor tester to test the bonding stability of MOS tube to obtain the bonding success degree;

[0231] Summarizing the bonding success degrees to obtain multiple bonding success degrees, and confirming a maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the maximum bonding success degree among the multiple bonding success degrees;

[0232] The bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semi-conductor field effect transistor.

[0233] Specifically, the specific implementation method of the processor 10 for the above instructions can refer to Figures 1 to 3 The description of the relevant steps in the corresponding embodiments will not be repeated here.

[0234] Furthermore, if the module / unit integrated in the electronic device 1 is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. The computer-readable storage medium can be volatile or non-volatile. For example, the computer-readable medium can include: any entity or device capable of carrying the computer program code, a recording medium, a USB flash drive, a mobile hard disk, a magnetic disk, an optical disk, a computer memory, and a read-only memory (ROM).

[0235] The present invention further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor of an electronic device, the computer program can implement:

[0236] Acquire a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity tester, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor;

[0237] Using a material analysis mechanism to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, and based on the bonding difficulty and bonding stability, determining a reference pressure range, a reference ultrasonic range, and a reference time range;

[0238] Identify a bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal;

[0239] The bonding parameter set is confirmed based on the reference pressure range, the reference ultrasonic range and the reference time range, and the following operations are performed on each bonding parameter set in the bonding parameter set:

[0240] Performing a bonding operation on the pre-built initial transistor based on the bonding parameter group, the bonding metal wire set and the bonding machine to obtain a bonded transistor, and packaging the bonded transistor to obtain a MOS transistor, wherein the MOS transistor includes: an initial source, an initial drain and an initial gate;

[0241] Use temperature tester and semiconductor tester to test the bonding stability of MOS tube to obtain the bonding success degree;

[0242] Summarizing the bonding success degrees to obtain multiple bonding success degrees, and confirming a maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the maximum bonding success degree among the multiple bonding success degrees;

[0243] The bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semi-conductor field effect transistor.

[0244] In the several embodiments provided by the present invention, it should be understood that the disclosed devices, systems and methods can be implemented in other ways. For example, the system embodiments described above are only illustrative, and actual implementation may have other division methods.

[0245] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0246] In addition, each functional module in each embodiment of the present invention may be integrated into one processing unit, each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of hardware plus software functional modules.

[0247] It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention.

[0248] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention.

Claims

1. A bonding parameter optimization method for a metal oxide semiconductor field effect transistor, characterized in that: The method comprises: Acquire a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity tester, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor; Using a material analysis mechanism to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, and based on the bonding difficulty and bonding stability, determining a reference pressure range, a reference ultrasonic range, and a reference time range; Identify a bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal; The bonding parameter set is confirmed based on the reference pressure range, the reference ultrasonic range and the reference time range, and the following operations are performed on each bonding parameter set in the bonding parameter set: Performing a bonding operation on the pre-built initial transistor based on the bonding parameter group, the bonding metal wire set and the bonding machine to obtain a bonded transistor, and packaging the bonded transistor to obtain a MOS transistor, wherein the MOS transistor includes: an initial source, an initial drain and an initial gate; Use temperature tester and semiconductor tester to test the bonding stability of MOS tube to obtain the bonding success degree; The method of using a temperature tester and a semiconductor tester to perform a bonding stability test on the MOS tube to obtain a bonding success degree includes: The initial source, the initial drain and the initial gate of the MOS tube are connected to the source terminal, the drain terminal and the gate terminal of the semiconductor tester respectively to obtain a target tester; Use the target tester to test the voltage threshold of the MOS tube to obtain the transistor voltage threshold; Using a temperature tester to obtain an initial operating temperature of the MOS tube, using a target tester to set a voltage between an initial drain and an initial source of the MOS tube as a preset first operating voltage to obtain a first MOS tube, and using the target tester to set a voltage between an initial gate and an initial source of the first MOS tube as a preset second operating voltage to obtain a second MOS tube, wherein the first operating voltage is greater than the second operating voltage, and the second operating voltage is greater than a transistor voltage threshold; Taking the time of obtaining the second MOS tube as the starting point and recording the time in real time, obtaining the crystal working time, until the crystal working time reaches a preset working time threshold, using a temperature tester to obtain the termination working temperature of the second MOS tube; The bonding success is calculated based on the transistor voltage threshold, operating time threshold, initial operating temperature, and final operating temperature. The calculation formula is as follows: ； in, is the bonding success rate, is the transistor voltage threshold, is the preset standard voltage threshold, and are the final operating temperature and the initial operating temperature, respectively. is the working time threshold, refers to the hyperbolic tangent function, Refers to taking absolute value; Summarizing the bonding success degrees to obtain multiple bonding success degrees, and confirming a maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the maximum bonding success degree among the multiple bonding success degrees; The bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semi-conductor field effect transistor.

2. The bonding parameter optimization method for metal oxide semi-conductor field effect transistor according to claim 1, characterized in that: The material analysis mechanism is used to perform a performance analysis operation on the bonding metal wire set to obtain bonding difficulty and bonding stability, including: Extracting bonding metal wires from the bonding metal wire set, performing a cutting operation on the bonding metal wires, and obtaining metal wire samples; Obtaining the metal wire diameter of the metal wire sample, and performing a tensile test on the metal wire sample using a tensile testing machine in a material analysis institution to obtain the metal wire elongation and ultimate tensile force; Using an elasticity tester to obtain the elastic modulus of the metal wire sample, using a test power supply to perform a resistance heat generation test on the metal wire sample to obtain the temperature rise rate of the metal wire, and using a thermal conductivity tester to obtain the thermal conductivity of the metal wire sample; The bonding difficulty is calculated based on the thermal conductivity and elongation of the metal wire. The calculation formula is as follows: ； in, is the bonding difficulty, is the thermal conductivity of the metal wire, is the metal wire elongation, is the natural logarithm; The bonding stability is calculated based on the elastic modulus of the metal wire, the temperature rise rate of the metal wire, the ultimate extension force and the diameter of the metal wire. The calculation formula is as follows: ； in, For bonding stability, is the ultimate extension force, is the wire diameter, is the elastic modulus of the metal wire, is the temperature rise rate of the metal wire, is a natural constant.

3. The bonding parameter optimization method for metal oxide semi-conductor field effect transistor according to claim 2, characterized in that: The method of using a tensile testing machine in a material analysis mechanism to perform a tensile test on a metal wire sample to obtain the elongation and ultimate tensile force of the metal wire includes: confirming the fixed metal wire based on the metal wire sample, the fixing fixture of the tensile testing machine and the tensile rod, and confirming the initial gauge length of the fixed metal wire; The fixed metal wire is stretched by a stretching rod of a tensile testing machine, and a tensile force sensor and a displacement sensor are used to monitor in real time the tensile force and the tensile displacement of the fixed metal wire when the tensile rod of the tensile testing machine is stretched, until the fixed metal wire breaks, and the tensile force monitored by the tensile force sensor when the fixed metal wire breaks is used as the limit extension force, and the tensile displacement monitored by the displacement sensor when the fixed metal wire breaks is used as the target displacement; The wire elongation is calculated using the initial gauge length and target displacement. The calculation formula is as follows: ； in, is the target displacement, is the initial gauge length.

4. The bonding parameter optimization method for metal oxide semi-conductor field effect transistor according to claim 3, characterized in that: The method of using a test power supply to perform a resistance heat generation test on a metal wire sample to obtain a temperature rise rate of the metal wire includes: Performing a detection operation on the metal wire sample using a pre-built temperature sensor to obtain an initial sample temperature; A test path is constructed based on the metal wire sample and the test power supply, the test power supply in the test path is started, the time of starting the test power supply in the test path is used as the starting point and the time is recorded in real time to obtain the power-on time, and the metal wire sample in the test path is tested for power-on by using the started test power supply until the power-on time reaches a preset power-on time threshold, and the metal wire sample in the test path after the power-on test is performed a detection operation by using a temperature sensor to obtain the heat generation temperature; The temperature rise rate of the metal wire is calculated based on the initial sample temperature, power-on time threshold and heat generation temperature. The calculation formula is as follows: ； in, is the heat generation temperature, is the initial sample temperature, is the power-on time threshold.

5. The bonding parameter optimization method for metal oxide semi-conductor field effect transistor according to claim 4, characterized in that: The reference pressure range, reference ultrasonic range and reference time range are determined based on the bonding difficulty and bonding stability, including: The target pressure is calculated based on the bonding difficulty. The calculation formula is as follows: ； in, is the target pressure, is the preset reference bonding difficulty, is the preset reference pressure; Calculating the fluctuation pressure according to the reference pressure and the preset fluctuation coefficient, wherein the fluctuation pressure is the product of the reference pressure and the fluctuation coefficient; Determine a reference maximum pressure and a reference minimum pressure based on the target pressure and the fluctuating pressure, wherein the reference maximum pressure is the absolute difference between the target pressure and the fluctuating pressure, and the reference minimum pressure is the sum of the target pressure and the fluctuating pressure; Determine a reference pressure range based on a reference maximum pressure and a reference minimum pressure, wherein the minimum value of the reference pressure range is the reference minimum pressure, and the maximum value of the reference pressure range is the reference maximum pressure; Obtaining a reference ultrasonic range based on a reference bonding difficulty, a preset reference ultrasonic frequency, a fluctuation coefficient, and a bonding difficulty; The target time is calculated based on the bond stability, and the calculation formula is as follows: ； in, is the target time, is the preset reference bonding stability, is the preset reference time; Get the reference time range based on the target time, reference time and volatility coefficient.

6. The bonding parameter optimization method for metal oxide semi-conductor field effect transistor according to claim 5, characterized in that: The step of confirming the bonding parameter set based on the reference pressure range, the reference ultrasound range, and the reference time range includes: The pressure sampling interval is calculated based on the preset number of samples and the reference pressure range. The calculation formula is as follows: ； in, is the pressure sampling interval, and are the maximum value and the minimum value of the reference pressure range, respectively. is the number of samples; Performing a uniform sampling operation on the reference pressure range based on the pressure sampling interval to obtain a sampled pressure set; Acquire a sampling ultrasonic frequency set based on the sampling number and the reference ultrasonic range, and acquire a sampling time set based on the sampling number and the reference time range; A bonding parameter set is obtained based on the sampling pressure set, the sampling ultrasonic frequency set and the sampling time set, wherein the bonding parameter set is a Cartesian product of the sampling pressure set, the sampling ultrasonic frequency set and the sampling time set.

7. The bonding parameter optimization method for a metal oxide semi-conductor field effect transistor according to claim 6, characterized in that: The method of using a target tester to perform a voltage threshold test on a MOS tube to obtain a transistor voltage threshold comprises: Using a target tester, setting the voltage between the initial drain and the initial source of the MOS tube to a preset first fixed voltage to obtain a primary MOS tube; Using a target tester, setting the voltage between the initial gate and the initial source of the primary MOS tube to a preset second fixed voltage to obtain an intermediate MOS tube; Using a target tester to read the current between the initial drain and the initial source of the intermediate MOS tube to obtain a source-drain current, recording the time when the source-drain current is obtained to obtain a current time, and integrating the source-drain current, the second fixed voltage and the current time into a current data packet; The current data packet is stored in a pre-built current memory to obtain a target memory, and an update voltage is determined based on a preset superimposed voltage and a second fixed voltage, wherein the update voltage is the sum of the superimposed voltage and the second fixed voltage; The target memory is used as a current memory, the update voltage is used as a second fixed voltage, and the intermediate MOS tube is used as a primary MOS tube, and the step of using the target tester to set the voltage between the initial gate and the initial source of the primary MOS tube to the preset second fixed voltage is returned until the update voltage is greater than the preset termination voltage threshold, and n current data packets are extracted from the target memory; Sort the n current data packets according to the order of the current time in the current data packets from earliest to latest to obtain a current data packet sequence; Extracting n source-drain currents from the n current data packets, and sorting the n source-drain currents according to the order of the current data packets corresponding to the source-drain currents in the current data packet sequence, to obtain a source-drain current sequence; The transistor voltage threshold is determined based on the source-drain current sequence.

8. The bonding parameter optimization method for a metal oxide semi-conductor field effect transistor according to claim 7, characterized in that: The method of confirming a transistor voltage threshold based on a source-drain current sequence comprises: Extracting an i-th source-drain current from the source-drain current sequence, wherein an initial value of i is 1, and confirming an i+1-th source-drain current in the source-drain current sequence based on the i-th source-drain current, wherein the i+1-th source-drain current is adjacent to the i-th source-drain current in the source-drain current sequence and lags behind the i-th source-drain current; Calculating a source-drain current difference according to the i-th source-drain current and the i+1-th source-drain current, wherein the source-drain current difference is an absolute difference between the i-th source-drain current and the i+1-th source-drain current; comparing the source-drain current difference with a preset current difference threshold; If the source-drain current difference is greater than or equal to the current phase difference threshold, the second fixed voltage corresponding to the (i+1)th source-drain current is used as the transistor voltage threshold; If the source-drain current difference is less than the current phase difference threshold, set I=i+1, take I as i, and return to the step of extracting the i-th source-drain current from the source-drain current sequence until the source-drain current difference is greater than or equal to the current phase difference threshold.

9. A bonding parameter optimization system for metal oxide semi-conductor field effect transistors, used to perform any one of the optimization methods of claims 1-8, characterized in that: The system comprises: A bonding material preparation module, used to obtain a bonding metal wire set and a material analysis mechanism, wherein the material analysis mechanism includes: a tensile testing machine, an elasticity tester, a test power supply and a thermal conductivity tester, wherein the tensile testing machine includes: a fixing fixture, a tensile rod, a tension sensor and a displacement sensor; A bonding metal analysis module is used to perform a performance analysis operation on a bonding metal wire set using a material analysis mechanism to obtain bonding difficulty and bonding stability, and to determine a reference pressure range, a reference ultrasonic range, and a reference time range based on the bonding difficulty and bonding stability; A bonding parameter test module is used to confirm a bonding processing mechanism, wherein the bonding processing mechanism includes: a bonding machine, a temperature tester and a semiconductor tester, and the semiconductor tester includes: a gate terminal, a drain terminal and a source terminal, confirm a bonding parameter set based on a reference pressure range, a reference ultrasonic range and a reference time range, perform the following operations on each bonding parameter set in the bonding parameter set, perform a bonding operation on a pre-constructed initial transistor based on the bonding parameter set, a bonding metal wire set and a bonding machine to obtain a bonding transistor, package the bonding transistor to obtain a MOS tube, wherein the MOS tube includes: an initial source, an initial drain and an initial gate, perform a bonding stability test on the MOS tube using a temperature tester and a semiconductor tester to obtain a bonding success degree; The bonding parameter confirmation module is used to summarize the bonding success degrees to obtain multiple bonding success degrees, and confirm the maximum bonding success degree based on the multiple bonding success degrees, wherein the maximum bonding success degree is the largest bonding success degree among the multiple bonding success degrees, and the bonding parameter group corresponding to the maximum bonding success degree is used as the target parameter group to complete the bonding parameter optimization of the metal oxide semiconductor field effect transistor.

Images