A temperature control implementation method and an intelligent device

Abstract

The present application provides a temperature control implementation method and an intelligent device. The system-on-chip obtains first temperature data from a first temperature sensor group, and controls whether the charging integrated circuit charges the battery according to the first temperature data. The system-on-chip obtains second temperature data from a second temperature sensor group, and adjusts the output voltage and output current provided by the microcontroller unit to the active heat dissipation component according to the second temperature data. The present application separately arranges the system-on-chip and the charging integrated circuit, reducing the risk of excessive local temperature. Active cooling is achieved by arranging the active heat dissipation component in contact with the system-on-chip. The temperature of the secondary board area is collected by the first temperature sensor group and the temperature of the main board area is collected by the second temperature sensor group. Zoned temperature control is adopted to improve the flexibility of heat dissipation control and enhance the user experience.

Description

Technical Field

[0001] This application relates to the field of data processing, and specifically relates to a temperature control implementation method and an intelligent device. Background Art

[0002] With the remarkable progress of key technologies such as 5G (Fifth Generation Mobile Communication Technology), AI (Artificial Intelligence), and foldable screens, the functions and forms of intelligent devices have changed. These technological innovations have not only changed the functions and forms of intelligent devices, but also had a profound impact on users' daily lives.

[0003] Consumers' demands for the functions of intelligent devices are becoming increasingly diverse, which has promoted intelligent device manufacturers to continuously research and innovate to meet the market's demands. Users' demands for personalization, performance, and usage experience are constantly increasing. In order to stand out in the fierce market competition, intelligent device manufacturers are constantly adding new functional modules to enhance the differential competitiveness of their products.

[0004] In summary, the more functional modules an intelligent device is equipped with, the higher the integration degree and the smaller the space of the internal components of the intelligent device. The SOC (System on a Chip) of the intelligent device is in a high-load state for a long time, which may cause the temperature to be too high and the frequency to drop, resulting in problems such as stuttering, frame dropping, and even device damage. Summary of the Invention

[0005] This application provides a temperature control implementation method and an intelligent device to solve the above problems.

[0006] In a first aspect, this application provides an intelligent device, including:

[0007] A circuit board, which includes a secondary board area, a main board area, and a battery area located between the secondary board area and the main board area;

[0008] A battery, which is located in the battery area;

[0009] A charging integrated circuit, which is located in the secondary board area;

[0010] A system-on-chip, which is located in the main board area and is connected to the charging integrated circuit;

[0011] An active heat dissipation component, which is disposed on the upper surface of the system-on-chip;

[0012] A first temperature sensor group, which is located in the daughter board area and is connected to the system-on-chip;

[0013] A second temperature sensor group, which is located in the main board area and is connected to the system-on-chip;

[0014] A microcontroller unit, which is located in the daughter board area and is connected to the active heat dissipation component and the system-on-chip.

[0015] In a second aspect, the present application provides a temperature control implementation method, which is applied to the intelligent device described in the first aspect. The method includes the steps of:

[0016] The system-on-chip obtains first temperature data from the first temperature sensor group and controls whether the charging integrated circuit charges the battery according to the first temperature data;

[0017] The system-on-chip obtains second temperature data from the second temperature sensor group and adjusts the output voltage and output current provided by the microcontroller unit to the active heat dissipation component according to the second temperature data.

[0018] The temperature control implementation method and intelligent device provided by this application. The intelligent device includes a circuit board, and the circuit board includes a secondary board area, a main board area, and a battery area located between the secondary board area and the main board area; a battery, which is located in the battery area; a charging integrated circuit, which is located in the secondary board area; a system-on-chip, which is located in the main board area and is connected to the charging integrated circuit; an active heat dissipation component, which is disposed on the upper surface of the system-on-chip; a first temperature sensor group, which is located in the secondary board area and is connected to the system-on-chip; a second temperature sensor group, which is located in the main board area and is connected to the system-on-chip; a micro control unit, which is located in the secondary board area and is connected to the active heat dissipation component and the system-on-chip. The system-on-chip obtains first temperature data from the first temperature sensor group and controls whether the charging integrated circuit charges the battery according to the first temperature data; the system-on-chip obtains second temperature data from the second temperature sensor group and adjusts the output voltage and output current provided by the micro control unit to the active heat dissipation component according to the second temperature data. This application separates the layout of the system-on-chip and the charging integrated circuit, separates the two main heat sources, avoids their mutual influence, and reduces the risk of excessive local temperature. By arranging the active heat dissipation component in contact with the system-on-chip, heat can be quickly transferred from the system-on-chip to the outside to achieve active cooling. The temperature of the secondary board area is collected by the first temperature sensor group, and the temperature of the main board area is collected by the second temperature sensor group. A partitioned temperature control strategy is adopted to independently control the temperature of different areas inside the intelligent device, and corresponding heat dissipation measures are taken according to the temperature conditions of each area to avoid damage to the device caused by excessive temperature. Description of the Drawings

[0019] In order to more clearly illustrate the technical solutions in the embodiments of this application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of this application. For those skilled in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0020] Figure 1 It is a front view of an intelligent device provided by an embodiment of this application.

[0021] Figure 2 It is a side view of an intelligent device provided by an embodiment of this application.

[0022] Figure 3It is a schematic structural diagram of a thermoelectric cooling sheet, a flexible printed circuit board adapter board, and a spring piece provided by an embodiment of the present application;

[0023] Figure 4 It is a schematic layout diagram of temperature data obtained by a first temperature sensor group and a second temperature sensor group in an intelligent device provided by an embodiment of the present application.

[0024] Figure 5 It is a schematic flow diagram of a temperature control implementation method provided by an embodiment of the present application. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0026] In the description of the embodiments of the present application, it should be understood that the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of the described features. In the description of the embodiments of the present application, "a plurality" means two or more, unless otherwise specifically defined.

[0027] In order for any person skilled in the art to implement and use the present application, the following description is given. In the following description, details are set forth for the purpose of explanation. It should be understood that those skilled in the art can recognize that the present application can be implemented without using these specific details. In other instances, well-known processes will not be elaborated in detail to avoid unnecessary details from obscuring the description of the embodiments of the present application. Therefore, the present application is not intended to be limited to the embodiments shown, but is consistent with the broadest scope that conforms to the principles and features disclosed in the embodiments of the present application.

[0028] The intelligent device includes a PMIC (Power Management Integrated Circuit), an SOC, and a circuit board, etc. The PMIC includes a charging IC (Integrated Circuit) and a charging protection circuit. Both the charging IC and the SOC are concentrated heat sources that generate a large amount of heat. The charging IC is responsible for managing the charging process of the battery, including controlling the charging current and voltage to ensure that the battery can be charged safely and efficiently. The charging IC can also adjust the charging current and voltage to adapt to different types of batteries and charging requirements. The charging IC can also monitor the charging status of the battery to ensure the stability of the charging process. The charging IC supports multiple charging modes, such as constant voltage charging, constant current charging, etc., to improve the charging efficiency. The charging protection circuit is used to protect the battery and the device from various abnormal situations that may occur during the charging process. The charging protection circuit can prevent the battery voltage from exceeding its rated voltage to achieve overcharge protection and avoid battery damage. That is, the charging protection circuit can ensure that the battery will not be over-discharged during the discharging process to achieve over-discharge protection and extend the battery life. The charging protection circuit can limit the charging and discharging current to achieve over-current protection and prevent the battery or device from being damaged due to excessive current. And the charging protection circuit can quickly cut off the current when the charging or discharging circuit is short-circuited to achieve short-circuit protection and prevent the device from being damaged.

[0029] In the design of intelligent devices, the charging integrated circuit and the SOC can be centrally arranged on the circuit board. However, this will cause the two concentrated heat sources to be coupled with each other, that is, their heats may affect each other, resulting in a decrease in heat dissipation efficiency. To solve this problem, passive heat dissipation methods are usually adopted for the heat dissipation of intelligent devices, such as a heat dissipation layer composed of one or several combinations of materials such as nano-carbon copper, graphene heat dissipation film, VC (Vapor Chamber) heat dissipation plate, and thermal grease. However, in this case, the SOC monitors rather than anticipates in advance. That is, the SOC will take actions when the temperature sensor detects an abnormal increase in temperature, such as reducing heat generation by working frequency or accelerating heat dissipation through the heat dissipation layer. This kind of monitoring is a reactive measure rather than a preventive one. That is to say, the monitoring function of the SOC mainly responds based on the monitored temperature data after the temperature has risen to a certain extent, rather than predicting and taking measures before the temperature rises, which cannot take preventive measures to prevent overheating in advance.

[0030] The temperature control implementation method and the intelligent device of the present application will be described below in conjunction with the accompanying drawings of the specification to solve the above problems.

[0031] Refer to Figure 1 as shown, Figure 1 is a front view of the intelligent device 1 provided by an embodiment of the present application. As Figure 1 shown, the intelligent device 1 includes:

[0032] A circuit board 10, the circuit board 10 includes a secondary board area C, a main board area A, and a battery 20 area B located between the secondary board area C and the main board area A;

[0033] A battery 20, the battery 20 is located in the battery 20 area B;

[0034] A charging integrated circuit 30, the charging integrated circuit 30 is located in the secondary board area C;

[0035] A system-on-chip 40, the system-on-chip 40 is located in the main board area A, and the system-on-chip 40 is connected to the charging integrated circuit 30;

[0036] An active heat dissipation component 50, the active heat dissipation component 50 is disposed on the upper surface of the system-on-chip 40;

[0037] A first temperature sensor group 60, the first temperature sensor group 60 is located in the secondary board area C, and the first temperature sensor group 60 is connected to the system-on-chip 40;

[0038] A second temperature sensor group 70, the second temperature sensor group 70 is located in the main board area A, and the second temperature sensor group 70 is connected to the system-on-chip 40;

[0039] A micro control unit 80, the micro control unit 80 is located in the secondary board area C, and the micro control unit 80 is connected to the active heat dissipation component 50 and the system-on-chip 40.

[0040] Specifically, the intelligent device 1 includes but is not limited to a smart phone, a smart tablet, a tablet computer, a smart watch, etc. Such as Figure 1As shown in the figure, the smart device 1 includes a circuit board 10, a battery 20, a charging integrated circuit 30, a system-on-chip 40, an active heat dissipation component 50, a first temperature sensor group 60, a second temperature sensor group 70, and a microcontroller unit 80. The circuit board 10 serves as a carrier to connect electronic components such as the battery 20, the charging integrated circuit 30, the system-on-chip 40, the active heat dissipation component 50, the first temperature sensor group 60, the second temperature sensor group 70, and the microcontroller unit 80 together. Among them, the circuit board 10 of the smart device 1 is divided into three regions as a carrier, namely the daughter board region C, the main board region A, and the battery 20 region B. The battery 20 region B is located between the daughter board region C and the main board region A. The battery 20 is arranged in the battery 20 region B to provide electrical energy for the device. The charging integrated circuit 30 is arranged in the daughter board region C. The main function of the charging integrated circuit 30 is to control the charging process of the battery 20, including the regulation of charging current and voltage, prevention of overcharging and over-discharging, etc., to ensure the safety of the battery 20 and extend its service life. The system-on-chip 40 is arranged in the main board region A and is the core "brain" of the smart device 1, integrating many functional modules such as a processor and a memory. The system-on-chip 40 is connected to the charging integrated circuit 30 and can obtain the battery 20 status information in real time for operations such as battery 20 management. At the same time, the system-on-chip 40 is also connected to the active heat dissipation component 50, the first temperature sensor group 60, the second temperature sensor group 70, the microcontroller unit 80, etc. to achieve the overall control and management of the smart device 1. The active heat dissipation component 50 is arranged on the upper surface of the system-on-chip 40. Since a large amount of heat is generated during the operation of the system-on-chip 40, the active heat dissipation component 50 can dissipate the heat in time to ensure that the system-on-chip 40 can work stably at an appropriate temperature and prevent performance degradation or damage due to overheating. The first temperature sensor group 60 is located in the daughter board region C to monitor the temperature of the daughter board region C in real time to obtain the first temperature data, such as the temperature near the charging integrated circuit 30, etc., and feed the first temperature data back to the system-on-chip 40 so that the system-on-chip 40 can make corresponding adjustments according to the temperature change, such as controlling the charging current size to achieve temperature control of the daughter board region C. The second temperature sensor group 70 is located in the main board region A to monitor the temperature of the main board region A in real time to obtain the second temperature data, focusing on the temperature around the system-on-chip 40 and other key components, providing more comprehensive data support for the temperature management and heat dissipation strategy of the smart device 1. The microcontroller unit 80 is in the daughter board region C and is connected to the active heat dissipation component 50 and the system-on-chip 40. The microcontroller unit 80 can control the operation of the active heat dissipation component 50 according to the instructions of the system-on-chip 40 to achieve temperature control of the main board region A.

[0041] Since both the system-level chip 40 and the charging integrated circuit 30 generate a lot of heat when working, if they are arranged together, the heat will accumulate rapidly in the local area, causing the temperature of the area to rise sharply. In this application, the system-level chip 40 and the charging integrated circuit 30 are respectively arranged in the main board area A and the sub-board area C of the circuit board 10 to achieve a separate layout. In this way, the two main heat sources are distributed in different areas, and the heat is dissipated in their respective areas, avoiding excessive concentration of heat in the same area, thereby effectively reducing the local temperature. When the charging IC and SOC are arranged separately, the heat transfer path between the two becomes longer, reducing the efficiency of heat transfer. For example, the heat transferred from the charging IC to the SOC needs to be transferred inside the sub-board area C first, and then transferred to the main board area A through the connecting part of the circuit board 10. The heat loss in this process will increase, which reduces the mutual influence between the two heat sources and the risk of local temperature increase. Since the heat generated by the two heat sources of the charging IC and SOC may be superimposed on each other to form a higher temperature area when the charging IC and SOC are arranged in a centralized manner, the heat generated by each heat source is mainly dissipated in the surrounding area of itself after the present application separates the charging IC and SOC, and will not have a direct superposition effect on another heat source, thereby making the temperature distribution of each area more uniform, effectively avoiding the heat superposition effect, and thus reducing the risk of local excessive temperature. By setting the active heat dissipation component 50 in contact with the system-level chip 40, when the system-level chip 40 generates heat, the active heat dissipation component 50 can quickly transfer the heat from the system-level chip 40 to the outside, thereby achieving active cooling of the system-level chip 40, which can prevent the system-level chip 40 from experiencing performance degradation, freezing or even damage due to overheating, and can also control the temperature of the system-level chip 40 within an appropriate range, so that the system-level chip 40 can continue to operate stably in a high-performance state, provide powerful computing and processing capabilities for the smart device 1, and ensure the normal performance of various functions of the smart device 1. The temperature of the sub-board area C is collected through the first temperature sensor group 60, and the temperature of the mainboard area A is collected through the second temperature sensor group 70, providing an accurate temperature basis for the partition temperature control strategy. Through the temperature data collected by these sensor groups, the SOC can understand the temperature conditions of each area in real time, so as to take corresponding heat dissipation measures for different areas, realize precise temperature control, and avoid affecting the performance and service life of the equipment due to excessively high or low temperature.

[0042] In some embodiments, reference Figure 2 As shown, Figure 2 is a side view of the smart device 1 provided in the embodiment of the present application, such as Figure 2 As shown, the active heat dissipation component 50 includes: a thermoelectric cooling sheet 51, a first heat conducting layer 52, a second heat conducting layer 53, a transfer structure 54, and heat dissipation fins 55;

[0043] The circuit board 10 is connected to the thermoelectric cooling sheet 51 through the adapter structure 54;

[0044] The cold surface 51a of the thermoelectric cooling sheet 51 is connected to the upper surface of the system-level chip 40, and the first heat-conducting layer 52 is located between the cold surface 51a and the upper surface of the system-level chip 40; the cold surface 51a of the thermoelectric cooling sheet 51 is close to the system-level chip 40 along the stacking direction Y, and the stacking direction Y is perpendicular to the extension direction of the circuit board 10;

[0045] The hot surface 51 b of the thermoelectric cooling sheet 51 is connected to the heat dissipation fins 55 , and the second heat conductive layer 53 is located between the hot surface 51 b and the heat dissipation fins 55 ; the hot surface 51 b of the thermoelectric cooling sheet 51 is away from the system-level chip 40 along the stacking direction Y.

[0046] Specifically, the circuit board 10 is connected to the TEC (Thermo-Electric Cooler, thermoelectric cooling sheet 51) through the adapter structure 54. This design not only realizes the physical connection between the two, but also ensures the stability of the TEC during operation. In addition, the adapter structure 54 provides a stable current for the TEC, so that it can work normally and exert a cooling effect. The adapter structure 54 can be fixed in a variety of ways, such as screw fixing, snap connection, etc., to ensure that the TEC is firmly installed on the circuit board 10 and will not be displaced or fall off due to vibration or impact of the equipment.

[0047] TEC works based on the Peltier effect, that is, it uses the absorption and release of heat generated when electric current passes through a circuit composed of different conductors to form a cold side and a hot side. By controlling the magnitude of the current flowing through the hot spot cooling plate, precise temperature control can be achieved. In the present application, the cold surface 51a of the TEC contacts the system-level chip 40 and absorbs the heat generated by the chip, and the hot surface 51b of the TEC transfers the heat to achieve heat transfer and dissipation. The present application uses TEC to achieve efficient cooling effect in a smaller space. It has a high cooling efficiency and can quickly reduce the temperature of the system-level chip 40 in a short time, providing a good heat dissipation environment for the chip and ensuring the stability and performance of the chip when working under high load.

[0048] The cold surface 51a of the TEC is connected to the upper surface of the system-level chip 40. Since there may be tiny gaps or unevenness during actual contact, the first thermal conductive layer 52 is arranged between the cold surface 51a of the TEC and the upper surface of the system-level chip 40. The first thermal conductive layer 52 can fill these gaps and reduce thermal resistance. In this way, the heat conduction efficiency between the cold surface 51a of the TEC and the upper surface of the system-level chip 40 can be improved, the thermal conductivity can be enhanced, and the heat can be transferred from the chip to the TEC more smoothly, thereby improving the overall heat dissipation effect.

[0049] The hot surface 51b of the TEC is connected to the heat sink fins 55, and there is a second heat conducting layer 53 between the hot surface 51b of the TEC and the heat sink fins 55. The second heat conducting layer 53 can serve as a heat transfer bridge to reduce the thermal resistance between the hot surface 51b of the TEC and the heat sink fins 55, and quickly transfer the heat absorbed by the TEC to the heat sink fins 55, thereby increasing the heat conduction speed, so that the heat sink fins 55 can more effectively dissipate heat to the surrounding environment, avoiding heat accumulation inside the TEC, thereby ensuring the cooling efficiency of the TEC and the performance of the entire heat sink assembly, and maintaining the system-level chip 40 to operate at a lower temperature level.

[0050] The heat sink fins 55 are an important component of the heat dissipation assembly, and their main function is to increase the heat dissipation surface area 51b and improve the efficiency of heat dissipation to the surrounding environment. The heat sink fins 55 usually have a plurality of thin sheet structures, which can significantly increase the contact area with the air, so that the heat can be dissipated faster through air convection. The design of the heat sink fins 55 can further optimize the heat dissipation effect. For example, by reasonably designing the shape, spacing and arrangement of the fins, the flow speed and turbulence of the air flowing through the fins can be increased, and the transfer and dissipation of heat can be enhanced. In addition, auxiliary heat dissipation equipment such as fans can be set on the heat sink fins 55 to further accelerate the air flow, improve the heat dissipation performance, and ensure that the system-level chip 40 can remain in a suitable temperature range even when working at high load for a long time.

[0051] It should be noted that the materials of the first heat-conducting layer 52 and the second heat-conducting layer 53 can be high thermal conductivity materials, such as thermally conductive silicone, thermally conductive gel, etc. These materials have good flexibility and adhesion, and can closely fit the upper surface of the chip and the cold surface 51a of the TEC, as well as the hot surface 51b of the TEC and the heat sink fins 55, to ensure effective heat transfer.

[0052] The present application can quickly transfer heat from the system-level chip 40 to the outside through TEC, the first heat-conducting layer 52, the second heat-conducting layer 53, the adapter structure 54, and the heat dissipation fins 55, thereby realizing active cooling of the system-level chip 40. This can prevent the system-level chip 40 from experiencing performance degradation, freezing, or even damage due to overheating. It can also control the temperature of the system-level chip 40 within an appropriate range, so that the system-level chip 40 can continue to operate stably in a high-performance state, provide powerful computing and processing capabilities for the smart device 1, and ensure the normal functioning of various functions of the smart device 1.

[0053] In some embodiments, reference Figure 2 and Figure 3 As shown, Figure 2 is a side view of the smart device 1 provided in an embodiment of the present application, Figure 3This is a schematic structural diagram of the thermoelectric cooler 51, the flexible printed circuit board adapter 54b, and the spring piece 54c provided by an embodiment of the present application. As Figure 2 and Figure 3 shown, the adapter structure 54 includes a connection line 54a, a flexible printed circuit board adapter 54b, and a spring piece 54c;

[0054] The thermoelectric cooler 51 is connected to the flexible printed circuit board adapter 54b through the connection line 54a;

[0055] The flexible printed circuit board adapter 54b is connected to the circuit board 10 through the spring piece 54c.

[0056] Specifically, the adapter structure 54 includes a connection line 54a, an FPC (Flexible Printed Circuit, flexible printed circuit board adapter 54b), and a spring piece 54c. The connection line 54a can include insulated wires, heat-resistant insulated enameled wires, etc. The diameter of the connection line 54a can be less than 0.05 mm. In this way, in the case of limited space, the connection line 54a with a small diameter can significantly improve the signal quality and reduce electromagnetic interference. Using solder and soldering tools, the connection line 54a is soldered to the connection point of the TEC and the FPC, that is, the pad 54d, to ensure that the current can pass through the thermoelectric cooler 51 smoothly and achieve the refrigeration effect. The FPC is connected to the circuit board 10 through the spring piece 54c. This flexible connection method ensures the reliability and flexibility of the connection, and at the same time allows a certain amount of mechanical displacement, improving the stability and reliability of the system.

[0057] In some embodiments, referring to Figure 2 and Figure 4 shown, Figure 4 This is a layout schematic diagram of the temperature data obtained by the first temperature sensor group 60 and the second temperature sensor group 70 in the intelligent device 1 provided by an embodiment of the present application. As Figure 2 and Figure 4As shown, the intelligent device 1 further includes a charging protection circuit (not shown in the figure), a function module (not shown in the figure), an upper housing 90, and a lower housing 11 that is shape - fitted to the upper housing 90. An accommodation space is formed inside the lower housing 11. The upper housing 90 includes a plurality of air outlets 91. The function module includes a first radio frequency component (not shown in the figure), a second radio frequency component (not shown in the figure), a camera (not shown in the figure), and a flash (not shown in the figure). The function module, the circuit board 10, the battery 20, the charging integrated circuit 30, the charging protection circuit, the active heat dissipation component 50, the first temperature sensor group 60, the second temperature sensor group 70, and the micro - control unit 80 are located in the accommodation space 12. The charging protection circuit is located in the secondary board area C and is far from the charging integrated circuit 30. The function module is located in the main board area A.

[0058] The first temperature sensor group 60 includes m first temperature sensors. Among the m first temperature sensors, i first temperature sensors are used to detect the first temperature of the charging protection circuit, and among the m first temperature sensors, j first temperature sensors are used to detect the second temperature of the charging integrated circuit 30. m, i, and j are all positive integers, and m is equal to the sum of i and j.

[0059] The second temperature sensor group 70 includes n second temperature sensors. Among the n second temperature sensors, a second temperature sensors are used to detect the third temperature of the first radio frequency component and the fourth temperature of the second radio frequency component respectively. Among the n second temperature sensors, b second temperature sensors are used to detect the fifth temperature of the system - on - chip 40. Among the n second temperature sensors, c second temperature sensors are used to detect the sixth temperature of the camera. Among the n second temperature sensors, d second temperature sensors are used to detect the seventh temperature of the flash. Among the n second temperature sensors, e second temperature sensors are used to detect the eighth temperature of the lower housing 11. Among the n second temperature sensors, f second temperature sensors are used to detect the ninth temperature of the hot surface 51b of the thermoelectric cooler 51. Among the n second temperature sensors, g second temperature sensors are used to detect the tenth temperature of the battery 20. n, a, b, c, d, e, f, and g are all positive integers, and n is equal to the sum of a, b, c, d, e, f, and g.

[0060] Specifically, the main board area A of the intelligent device 1 includes a rear camera decoration sub-area 12, which refers to the area around the camera on the back cover of the mobile phone. The rear camera decoration sub-area 12 is usually used to install the camera module and related decoration components (such as insulation decoration parts, decorative rings, lenses, etc.). By enlarging the rear camera decoration sub-area 12, more space can be provided for the active heat dissipation component 50 without sacrificing the appearance of the intelligent device 1. In this way, the heat dissipation component can be effectively arranged in the compact internal structure of the intelligent device 1, thereby improving the heat dissipation efficiency. The first radio frequency component is one of the 2 / 3G radio frequency component and the 4 / 5G radio frequency component, and the second radio frequency component is the other of the 2 / 3G radio frequency component and the 4 / 5G radio frequency component. The intelligent device 1 further includes a charging protection circuit, a functional module, an upper housing 90 and a lower housing 11. An accommodation space is formed inside the lower housing 11, and the upper housing 90 includes a plurality of air outlets 91 for heat dissipation. The functional module includes the first radio frequency component, the second radio frequency component, the camera and the flash lamp, all of which are located in the main board area A. The charging protection circuit is located in the secondary board area C and away from the charging integrated circuit 30. In this way, the charging protection circuit and the charging integrated circuit 30 are independently arranged, which can ensure the safety and high reliability of the intelligent device 1 during the charging process. In addition, the upper housing 90 is provided with a plurality of air outlets 91. By contacting the air through the air outlets 91, radiation and convection heat dissipation are realized. The air outlets 91 of the upper housing 90 combined with the active heat dissipation component 50 can effectively improve the heat dissipation efficiency and extend the service life of the device.

[0061] In order to comprehensively obtain the temperature information of the smart device 1, a first temperature sensor group 60 and a second temperature sensor group 70 are installed. The first temperature sensor group 60 includes m first temperature sensors. Among the m first temperature sensors, i are used to detect the first temperature of the charging protection circuit, and j among the m first temperature sensors are used to detect the second temperature of the charging integrated circuit 30, where m = i + j, and m, i, and j are all positive integers. The second temperature sensor group 70 includes n second temperature sensors. Among the n second temperature sensors, a are used to detect the third temperature of the first radio frequency component and the fourth temperature of the second radio frequency component respectively, b among the n second temperature sensors are used to detect the fifth temperature of the system-on-chip 40, c among the n second temperature sensors are used to detect the sixth temperature of the camera, d among the n second temperature sensors are used to detect the seventh temperature of the flash, e among the n second temperature sensors are used to detect the eighth temperature of the lower housing 11, f among the n second temperature sensors are used to detect the ninth temperature of the hot surface 51b of the thermoelectric cooler 51, and g among the n second temperature sensors are used to detect the tenth temperature of the battery 20, where n = a + b + c + d + e + f + g, and n, a, b, c, d, e, f, and g are all positive integers. Among them, the first temperature sensor and the second temperature sensor can be any one of NTC (Negative Temperature Coefficient Thermistor), thermistor diode, semiconductor temperature sensor, and bimetal temperature sensor. The sensor types of the first temperature sensor and the second temperature sensor can be the same or different. In this application, the first temperature sensor and the second temperature sensor preferably use NTC.

[0062] In this application, by detecting the first temperature of the charging protection circuit of the smart device 1, the second temperature of the charging integrated circuit 30, the third temperature of the first radio frequency component, the fourth temperature of the second radio frequency component, the fifth temperature of the system-on-chip 40, the sixth temperature of the camera, the seventh temperature of the flash, the eighth temperature of the lower housing 11, the ninth temperature of the hot surface 51b of the thermoelectric cooler 51, and the tenth temperature of the battery 20, not only can the temperature of each area inside the smart device 1 be comprehensively monitored by multiple temperature sensors. Thus, based on the above temperature acquisition combined with the active heat dissipation component 50, the system-on-chip 40, and the micro control unit 80, it is possible to, according to the temperature feedback by the temperature sensors connected to each key component (i.e., the above charging protection circuit, charging integrated circuit 30, system-on-chip 40, battery 20, functional module, lower housing 11, hot surface 51b of the thermoelectric cooler 51) in different areas, take corresponding heat dissipation measures for different areas, achieve precise temperature control, ensure that the device operates within a safe temperature range, and avoid affecting the performance and service life of the device due to too high or too low temperature.

[0063] Reference Figure 5 As shown Figure 5 is a schematic flowchart of a temperature control implementation method provided by an embodiment of the present application. It should be noted that although the logical order is shown in the flowchart Figure 5 as shown, in some cases, the steps shown or described may be executed in a different order than that shown in the figure. The temperature control implementation method provided by the embodiment of the present application is applied to the intelligent device 1, such as Figure 5 as shown, the temperature control implementation method includes the steps:

[0064] S100. The system-on-chip 40 obtains first temperature data from the first temperature sensor group 60, and controls whether the charging integrated circuit 30 charges the battery 20 according to the first temperature data;

[0065] S200. The system-on-chip 40 obtains second temperature data from the second temperature sensor group 70, and adjusts the output voltage and output current provided by the microcontroller unit 80 to the active heat dissipation component 50 according to the second temperature data.

[0066] Specifically, the system-on-chip 40 obtains the temperature data of the secondary board area C, that is, the first temperature data, from the first temperature sensor group 60. In this way, the system-on-chip 40 can judge whether the temperature of the secondary board area C is within the safe range according to the first temperature data. If the temperature of the secondary board area C is too high, that is, the temperature exceeds the maximum value of the safe range, the system-on-chip 40 will control the charging integrated circuit 30 to stop charging the battery 20 to prevent safety problems caused by overheating. If the temperature of the secondary board area C is normal, that is, the temperature is within the safe range, the charging integrated circuit 30 continues to charge the battery 20. In addition, the system-on-chip 40 also obtains the temperature data of the main board area A, that is, the second temperature data, from the second temperature sensor group 70. Thus, the system-on-chip 40 judges whether the temperature of the main board area A is within the safe range according to the second temperature data. If the temperature of the main board area A is too high, that is, the temperature exceeds the maximum value of the safe range, the system-on-chip 40 will adjust the output voltage and output current provided by the microcontroller unit 80 to the active heat dissipation component 50 to increase the heat dissipation power to reduce the temperature of the system-on-chip 40. If the temperature of the main board area A is normal, that is, the temperature is within the safe range, the current heat dissipation state is maintained.

[0067] This application monitors and controls the temperature of the smart device 1 in real time through the first temperature sensor group 60 and the second temperature sensor group 70. In combination with the active heat dissipation component 50, the system-on-chip 40, and the microcontroller unit 80, it can stop charging the battery 20 in the battery 20 area B adjacent to the secondary board area C when the temperature in the secondary board area C is too high. This can prevent the battery 20 from overheating, reduce the damage and safety risks of the battery 20, and improve safety. Additionally, by monitoring the temperature of the system-on-chip 40 in real time to adjust the temperature of the system-on-chip 40 in real time through the active heat dissipation component 50, the stability and performance of the system-on-chip 40 during high-load applications (such as gaming, video editing), multitasking, and long-term use are ensured, providing users with a more reliable and efficient usage experience. Appropriate heat dissipation measures are dynamically taken according to the actual temperature situation to achieve precise temperature control, ensuring that the smart device 1 operates within a safe temperature range, avoiding affecting the performance of the smart device 1 due to excessive or too low temperature, and extending the service life of the smart device 1.

[0068] In this application, the system-on-chip 40 and the charging integrated circuit 30 are respectively arranged in the main board area A and the secondary board area C of the circuit board 10 to achieve a separate layout. In this way, the two main heat sources are distributed in different areas, and the heat is dissipated in their respective areas, avoiding the excessive concentration of heat in the same area, thereby effectively reducing the local temperature. When the charging IC and the SOC are separately arranged, the heat transfer path between them becomes longer, reducing the heat transfer efficiency. For example, when heat is transferred from the charging IC to the SOC, it needs to be transferred inside the secondary board area C first, and then transferred to the main board area A through the connection part of the circuit board 10. The heat loss in this process will increase, reducing the mutual influence between the two heat sources and also reducing the risk of local temperature rise. When the charging IC and the SOC are concentratedly arranged, the heat generated by the two heat sources of the charging IC and the SOC may be superimposed on each other, forming a higher temperature area. After the charging IC and the SOC are separately arranged in this application, the heat generated by each heat source is mainly dissipated in the surrounding area of itself, without directly superimposing on the other heat source, thus making the temperature distribution in each area more uniform, effectively avoiding the heat superposition effect, and further reducing the risk of excessive local temperature. By arranging the active heat dissipation component 50 in contact with the system-on-chip 40, when the system-on-chip 40 generates heat, the active heat dissipation component 50 can quickly transfer the heat from the system-on-chip 40 to the outside, thereby realizing the active cooling of the system-on-chip 40. In this way, it can prevent problems such as performance degradation, system crash, and even damage of the system-on-chip 40 due to overheating, and can also control the temperature of the system-on-chip 40 within an appropriate range, enabling the system-on-chip 40 to continuously and stably operate in a high-performance state, providing a powerful computing and processing ability for the intelligent device 1 and ensuring the normal operation of various functions of the intelligent device 1. By collecting the temperature of the secondary board area C through the first temperature sensor group 60 and collecting the temperature of the main board area A through the second temperature sensor group 70, accurate temperature basis is provided for the partition temperature control strategy. Through the temperature data collected by these sensor groups, the SOC can understand the temperature conditions of each area in real time, and thus take corresponding heat dissipation measures for different areas to achieve precise temperature control, avoiding affecting the performance and service life of the device due to too high or too low temperature.

[0069] In some embodiments, the first temperature data includes the first temperature of the charging protection circuit and the second temperature of the charging integrated circuit 30; the step S100 of controlling whether the charging integrated circuit 30 charges the battery 20 according to the first temperature data includes the steps:

[0070] S110. Compare the first temperature with the first preset temperature upper limit value and the first preset temperature lower limit value, and compare the second temperature with the second preset temperature upper limit value and the second preset temperature lower limit value;

[0071] S120. If the first temperature is higher than the first preset temperature upper limit value, and / or the second temperature is higher than the second preset temperature upper limit value, generate a first control signal and send it to the charging integrated circuit 30, so that the charging integrated circuit 30 controls to stop charging the battery 20 according to the first control signal;

[0072] S130. If when the power supply is connected, the first temperature is higher than the second preset temperature lower limit value and lower than the first temperature upper limit value, the second temperature is higher than the second temperature lower limit value and lower than the second preset temperature upper limit value, and the second temperature is lower than the second preset temperature lower limit value, generate a second control signal and send it to the charging integrated circuit 30, so that the charging integrated circuit 30 charges the battery 20 according to the second control signal.

[0073] Specifically, the system-on-chip 40 pre-obtains temperature thresholds, which include a first preset temperature upper limit value T1_MAX, a first preset temperature lower limit value T1_MIN, a second preset temperature upper limit value T2_MAX, and a second preset temperature lower limit value T2_MIN. The system-on-chip 40 obtains the first temperature data at each moment, including the first temperature T1 of the charging protection circuit and the second temperature T2 of the charging integrated circuit 30. Then, the system-on-chip 40 compares the first temperature T1 with the first preset temperature upper limit value T1_MAX and the first preset temperature lower limit value T1_MIN, and compares the second temperature T2 with the second preset temperature upper limit value T2_MAX and the second preset temperature lower limit value T2_MIN. If the first temperature T1 is higher than the first preset temperature upper limit value T1_MAX but the second temperature T2 is lower than the second preset temperature upper limit value T2_MAX, that is, T1 > T1_MAX and T2_MIN < T2 < T2_MAX; or the first temperature T1 is lower than the first preset temperature upper limit value T1_MAX but the second temperature T2 is higher than the second preset temperature upper limit value T2_MAX, that is, T2 > T2_MAX and T1_MIN < T1 < T1_MAX; or the first temperature T1 is higher than the first preset temperature upper limit value T1_MAX and the second temperature T2 is higher than the second preset temperature upper limit value T2_MAX, that is, T1 ≥ T1_MAX and T2 ≥ T2_MAX (or T1 > T1_MAX and T2 > T2_MAX), then the system-on-chip 40 generates a first control signal STOP_CHARGE and sends it to the charging integrated circuit 30, so that the charging integrated circuit 30 stops charging the battery 20 according to the first control signal STOP_CHARGE. Of course, if the first temperature T1 is higher than the first preset temperature lower limit value T1_MIN and lower than the first preset temperature upper limit value T1_MAX, and the second temperature T2 is higher than the second preset temperature lower limit value T2_MIN and lower than the second preset temperature upper limit value T2_MAX, that is, T1_MIN < T1 < T1_MAX and T2_MIN < T2 < T2_MAX, it indicates that the temperature inside the intelligent device 1 allows the battery 20 to enter the charging state. In this way, when the charging interface of the intelligent device 1 is connected to a power source for wired charging, or the intelligent device 1 is placed on a charger connected to a power source for wireless charging, the system-on-chip 40 generates a second control signal START_CHARGE and sends it to the charging integrated circuit 30, so that the charging integrated circuit 30 starts charging the battery 20.

[0074] This application accurately monitors the temperatures of the charging protection circuit and the charging integrated circuit 30, ensures charging is stopped when the temperature is too high, prevents the battery 20 from overheating and being damaged, reduces safety risks, and improves the safety and reliability of the charging process. Additionally, by accurately monitoring the temperatures of the charging protection circuit and the charging integrated circuit 30, charging is started when the temperature is appropriate, ensuring the efficiency of the charging process and the health status of the battery 20 to optimize the charging efficiency. This application avoids charging the battery 20 in high-temperature or low-temperature environments, reduces the chemical reaction and aging rate of the battery 20, and extends the service life of the battery 20.

[0075] In some embodiments, the smart device 1 further includes a first radio frequency component, a second radio frequency component, a camera, and a flash; the second temperature data includes the third temperature of the first radio frequency component, the fourth temperature of the second radio frequency component, the fifth temperature of the system-on-chip 40, the sixth temperature of the camera, the seventh temperature of the flash, the eighth temperature of the lower housing 11, the ninth temperature of the hot surface 51b of the thermoelectric cooler 51, and the tenth temperature of the battery 20; the S200, adjusting the output voltage and output current provided by the micro control unit 80 to the active heat dissipation component 50 according to the second temperature data includes the steps of:

[0076] S210. Obtain the instantaneous thermal power of the thermoelectric cooler 51 at the first moment according to the ninth temperature at the first moment and the fifth temperature at the first moment.

[0077] S220. Obtain the instantaneous power and heat capacity value of the main board area A at the first moment.

[0078] S230. Obtain the respective instantaneous power values corresponding to each heat-generating body in the smart device 1 in the working state, and the total instantaneous power value corresponding to all the heat-generating bodies in the working state; the heat-generating bodies include the first radio frequency component, the second radio frequency component, the camera, the flash, the thermoelectric cooler 51, the battery 20, and the system-on-chip 40.

[0079] S240. Use the instantaneous power value corresponding to each heat-generating body in the working state as the dividend and the total instantaneous power value as the divisor to obtain the respective weight coefficients corresponding to each heat-generating body.

[0080] S250. Calculate the product of the weight coefficient corresponding to the heat-generating body and the temperature corresponding to the heat-generating body at the first moment, and add up the product results corresponding to all the heat-generating bodies to calculate the initial temperature of the main board area A at the first moment.

[0081] S260. Calculate the predicted temperature of the motherboard area A at the second moment based on the instantaneous thermal power, the instantaneous power of the motherboard, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment; the second moment is later than the first moment.

[0082] S270. Obtain the first temperature setting range of the motherboard area A and the second temperature setting range of the lower housing 11.

[0083] S280. Determine whether the initial temperature corresponding to the first moment and the eighth temperature corresponding to the first moment satisfy a first preset condition, where the first preset condition is that the initial temperature is lower than the upper limit value of the first temperature setting range, and the eighth temperature corresponding to the first moment is lower than the upper limit value of the second temperature setting range.

[0084] S290. If the first preset condition is satisfied, determine whether the predicted temperature corresponding to the second moment and the eighth temperature corresponding to the second moment satisfy a second preset condition, where the second preset condition is that the predicted temperature is lower than a first safety temperature, and the eighth temperature corresponding to the second moment is lower than a second safety temperature. The first safety temperature is equal to the difference between the upper limit value of the first temperature setting range and a first numerical value, and the second safety temperature is equal to the difference between the upper limit value of the second temperature setting range and a second numerical value.

[0085] S295. If the second preset condition is not satisfied, generate and send a third control signal to the micro-control unit 80, so that the micro-control unit 80 gradually reduces the output voltage and output current provided to the active heat dissipation component 50 according to the third control signal.

[0086] Specifically, the system-on-chip 40 obtains the second temperature data at each moment, including the third temperature T3 of the first radio frequency component, the fourth temperature T4 of the second radio frequency component, the fifth temperature T5 of the system-on-chip 40, the sixth temperature T6 of the camera, the seventh temperature T7 of the flash, the eighth temperature T8 of the lower housing 11, the ninth temperature T9 of the hot surface 51b of the thermoelectric cooler 51, and the tenth temperature T10 of the battery 20. Then, the system-on-chip 40 calculates the instantaneous thermal power of the thermoelectric cooler 51 at the first moment based on the ninth temperature of the hot surface 51b of the thermoelectric cooler 51 at the first moment and the fifth temperature of the system-on-chip 40 at the first moment. The instantaneous power and heat capacity value of the main board area A at the first moment are measured and obtained through MCC-DAQ (Measurement Computing Corporation Data Acquisition System). The instantaneous power value corresponding to each heating element in the smart device 1 in the working state and the total instantaneous power value corresponding to all heating elements in the working state are measured and obtained through MCC-DAQ. In this way, the system-on-chip 40 obtains the instantaneous power value corresponding to each heating element in the working state and the total instantaneous power value corresponding to all heating elements in the working state from MCC-DAQ. Then, the system-on-chip 40 uses the instantaneous power value corresponding to each heating element in the working state as the dividend and the total instantaneous power value as the divisor to calculate the weight coefficient corresponding to each heating element, that is, the instantaneous power values corresponding to the heating elements, namely the first radio frequency component, the second radio frequency component, the camera, the flash, the thermoelectric cooler 51, and the battery 20 and the system-on-chip 40 in the working state are P1, P2, P3, P4, P5, P6, P7 respectively, and the total instantaneous power Psum = P1 + P2 + P3 + P4 + P5 + P6 + P7. In this way, the weight systems corresponding to the first radio frequency component, the second radio frequency component, the camera, the flash, the thermoelectric cooler 51, and the battery 20 and the system-on-chip 40 are P1 / Psum, P2 / Psum, P3 / Psum, P4 / Psum, P5 / Psum, P6 / Psum, P7 / Psum respectively.

[0087] The third temperature of the first radio frequency component, the fourth temperature of the second radio frequency component, the fifth temperature of the system-on-chip 40, the sixth temperature of the camera, the seventh temperature of the flash, the eighth temperature of the lower housing 11, the ninth temperature of the hot surface 51b of the thermoelectric cooler 51, and the tenth temperature of the battery 20 are measured through n second temperature sensors of the second temperature sensor group 70. Multiply the temperature corresponding to each heating element by its corresponding weight coefficient, and then sum to obtain the initial temperature at the first moment. The calculation formula is as follows:

[0088] T0 = (P1 / Psum × T3) + (P2 / Psum × T4) + (P3 / Psum × T5) + (P4 / Psum × T6) + (P5 / Psum × T7) + (P6 / Psum × T9) + (P7 / Psum × T10).

[0089] The system - on - chip 40 calculates the predicted temperature of the main - board area A at the second moment based on the instantaneous thermal power, the instantaneous power of the main board, the heat - capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment. After the system - on - chip 40 obtains the first temperature - setting range of the main - board area A and the second temperature - setting range of the lower housing 11, the system - on - chip 40 determines whether the initial temperature corresponding to the first moment and the eighth temperature of the lower housing 11 at the first moment satisfy the first preset condition, that is, the initial temperature corresponding to the first moment is lower than the upper limit value of the first temperature - setting range, and the eighth temperature corresponding to the first moment is lower than the upper limit value of the second temperature - setting range. The first preset condition can be expressed as T0 ∈ T0ok and T8a ∈ Thok. For example, T0ok = (30°C, 50°C) can be set. If the first preset condition is satisfied, then the system - on - chip 40 further determines whether the predicted temperature corresponding to the second moment and the eighth temperature corresponding to the second moment satisfy the second preset condition, that is, the predicted temperature corresponding to the second moment is lower than the first safety temperature, and the eighth temperature corresponding to the second moment is lower than the second safety temperature. The second preset condition can be expressed as T1 ∈ T0ok and T8b ∈ Thok. If the second preset condition is not satisfied, the system - on - chip 40 generates a third control signal and sends it to the micro - control unit 80, and the micro - control unit 80 gradient - wise reduces the output voltage and output current provided to the active heat - dissipation component 50 according to the received third control signal.

[0090] In this application, when the temperature is too high, the output voltage and output current provided to the active heat - dissipation component 50 are gradient - wise reduced, which can make the temperature control of the intelligent device 1 more delicate, avoid the intelligent device 1 from running for a long time in high - temperature or low - temperature environments, reduce the thermal stress and chemical reactions of the intelligent device 1, prevent the intelligent device 1 from overheating and damage, reduce safety risks, improve safety, and extend the service life of the intelligent device 1. Gradient - wise reducing the output voltage and output current provided to the active heat - dissipation component 50 when the temperature is too high can allow the SOC to cool down in a timely and rapid manner, and then keep the intelligent device 1 running at a high performance, ensuring that the intelligent device 1 maintains the best performance and safety in various usage scenarios (such as screen - on charging and playing while charging), and providing a more reliable and efficient usage experience for users.

[0091] In some embodiments, it further includes:

[0092] If a target component is detected among the heating components, a fourth control signal is generated to the target component to switch the target component to a stopped working state, where the target component is the heating component with a temperature value lower than the corresponding maximum temperature value.

[0093] Specifically, the SOC determines whether both T0 ∈ T0ok and T8a ∈ Thok hold. If not, it indicates that the temperature in the main board area A exceeds the safe range. The SOC can monitor the temperature of each heating component in real time. If at a certain moment the temperature of a certain heating component among all heating components is too high, that is, the temperature exceeds its corresponding maximum temperature value, then the SOC can directly shut down the operation of this heating component to reduce the heat generation of the device.

[0094] For example, it can be set that the normal operating temperature of the camera is generally in the range of (-25°C, 70°C). If at a certain moment the fifth temperature T5 of the SOC > 70°C, then the SOC directly generates a fourth control signal to turn off the camera.

[0095] In some embodiments, obtaining the instantaneous thermal power of the thermoelectric cooler 51 at the first moment according to the ninth temperature at the first moment and the fifth temperature at the first moment includes the steps of:

[0096] Substitute the ninth temperature of the hot surface 51b of the thermoelectric cooler 51 at the first moment and the fifth temperature of the system-on-chip 40 at the first moment into the following formula (1) to calculate the instantaneous thermal power;

[0097] (1)

[0098] Where, is the instantaneous thermal power, is the Seebeck coefficient of the thermoelectric cooler 51, is the output current provided by the microcontroller unit 80 to the active heat dissipation component 50, is the equivalent resistance of the thermoelectric cooler 51, is the temperature difference between the cold surface 51a and the hot surface 51b of the thermoelectric cooler 51, and the temperature difference is equal to the difference between the ninth temperature of the hot surface 51b of the thermoelectric cooler 51 at the first moment and the fifth temperature of the system-on-chip 40 at the first moment.

[0099] In some embodiments, calculating the predicted temperature of the main board area A at the second moment according to the instantaneous thermal power, the instantaneous power of the main board, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment includes the steps of:

[0100] Substitute the instantaneous thermal power, the instantaneous power of the main board, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment into the following formula (2) to calculate the predicted temperature;

[0101] (2)

[0102] Wherein, is the predicted temperature corresponding to the second moment, is the heat capacity value of the main board area at the first moment, is the first moment, is the second moment, is the instantaneous power of the main board in the main board area at the first moment, is the instantaneous thermal power of the thermoelectric cooler at the first moment, is the initial temperature of the main board area at the first moment.

[0103] In specific implementation, each of the above units or modules can be implemented as an independent entity, or can be combined arbitrarily to be implemented as the same or several entities. For the above units or modules, reference can be made to the data collection in the supply chain management project implemented in the foregoing method embodiments, which will not be elaborated herein.

[0104] Those of ordinary skill in the art can understand that all or part of the steps in the above various methods can be completed by instructions, or by controlling relevant hardware through instructions. The instructions can be stored in a computer-readable storage medium and loaded and executed by a processor to implement the above method embodiments. Among them, the computer-readable storage medium can include: read-only memory (ROM, Read Only Memory), random access memory (RAM, Random Access Memory), magnetic disk or optical disk, etc.

[0105] In the above embodiments, the descriptions of the various embodiments have their own emphases. For the parts not detailed in a certain embodiment, reference can be made to the relevant descriptions of other embodiments. Those skilled in the art can clearly understand that for the convenience and conciseness of description, the specific working processes of the above-described data acquisition system and its corresponding units and the beneficial effects that can be brought can refer to the description of the temperature control implementation method in the above embodiments, which will not be elaborated herein specifically.

[0106] The above has introduced in detail a temperature control implementation method and system provided by the present application. Specific examples are used herein to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for those skilled in the art, according to the idea of the present application, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present application.

Claims

1. A temperature control implementation method, characterized in that, Applied to a smart device, the smart device includes: A circuit board, the circuit board includes a daughter board area, a main board area, and a battery area located between the daughter board area and the main board area; A battery, the battery is located in the battery area; A charging integrated circuit, the charging integrated circuit is located in the daughter board area; A system-on-chip, the system-on-chip is located in the main board area, and the system-on-chip is connected to the charging integrated circuit; An active cooling component, the active cooling component is disposed on the upper surface of the system-on-chip; A first temperature sensor group, the first temperature sensor group is located in the daughter board area, and the first temperature sensor group is connected to the system-on-chip; A second temperature sensor group, the second temperature sensor group is located in the main board area, and the second temperature sensor group is connected to the system-on-chip; A microcontroller unit, the microcontroller unit is located in the daughter board area, and the microcontroller unit is connected to the active cooling component and the system-on-chip; The method includes the steps: The system-on-chip obtains first temperature data from the first temperature sensor group, and controls whether the charging integrated circuit charges the battery according to the first temperature data; The system-on-chip obtains second temperature data from the second temperature sensor group, and adjusts the output voltage and output current provided by the microcontroller unit to the active cooling component according to the second temperature data.

2. The temperature control implementation method according to claim 1, wherein, The first temperature data includes the first temperature of the charging protection circuit and the second temperature of the charging integrated circuit; the step of controlling whether the charging integrated circuit charges the battery according to the first temperature data includes: Comparing the first temperature with a first preset temperature upper limit value and a first preset temperature lower limit value, and comparing the second temperature with a second preset temperature upper limit value and a second preset temperature lower limit value; If the first temperature is higher than the first preset temperature upper limit value, and / or the second temperature is higher than the second preset temperature upper limit value, generating a first control signal and sending it to the charging integrated circuit, so that the charging integrated circuit controls to stop charging the battery according to the first control signal; If when the power supply is connected, the first temperature is higher than the second preset temperature lower limit value and lower than the first temperature upper limit value, the second temperature is higher than the second temperature lower limit value and lower than the second preset temperature upper limit value, and the second temperature is lower than the second preset temperature lower limit value, generating a second control signal and sending it to the charging integrated circuit, so that the charging integrated circuit charges the battery according to the second control signal.

3. The temperature control implementation method according to claim 1, wherein The intelligent device further includes a first radio frequency component, a second radio frequency component, a camera, and a flash; the second temperature data includes the third temperature of the first radio frequency component, the fourth temperature of the second radio frequency component, the fifth temperature of the system-on-chip, the sixth temperature of the camera, the seventh temperature of the flash, the eighth temperature of the lower housing, the ninth temperature of the hot surface of the thermoelectric cooler, and the tenth temperature of the battery; the adjusting, by the micro control unit, the output voltage and output current provided to the active heat dissipation component according to the second temperature data includes the steps of: Obtaining the instantaneous heat power of the thermoelectric cooler at the first moment according to the ninth temperature at the first moment and the fifth temperature at the first moment; Obtaining the instantaneous power and heat capacity value of the motherboard area at the first moment; Obtaining the respective instantaneous power values of each heating element in the intelligent device in the working state, and the total instantaneous power value of all the heating elements in the working state; the heating elements include the first radio frequency component, the second radio frequency component, the camera, the flash, the thermoelectric cooler, the battery, and the system-on-chip; Taking the respective instantaneous power value of each heating element in the working state as the dividend and the total instantaneous power value as the divisor to obtain the respective weight coefficients of each heating element; Performing a product calculation on the weight coefficient corresponding to the heating element and the temperature corresponding to the heating element at the first moment, and adding up the respective product results of all the heating elements to obtain the initial temperature of the motherboard area at the first moment; Calculating the predicted temperature of the motherboard area at the second moment according to the instantaneous heat power, the instantaneous power of the motherboard, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment; the second moment is later than the first moment; Obtaining a first temperature setting range of the motherboard area and a second temperature setting range of the lower housing; Judging whether the initial temperature corresponding to the first moment and the eighth temperature corresponding to the first moment satisfy a first preset condition, the first preset condition being that the initial temperature is lower than the upper limit value of the first temperature setting range, and the eighth temperature corresponding to the first moment is lower than the upper limit value of the second temperature setting range; If the first preset condition is satisfied, judging whether the predicted temperature corresponding to the second moment and the eighth temperature corresponding to the second moment satisfy a second preset condition, the second preset condition being that the predicted temperature is lower than a first safety temperature, and the eighth temperature corresponding to the second moment is lower than a second safety temperature, the first safety temperature being equal to the difference between the upper limit value of the first temperature setting range and a first numerical value, and the second safety temperature being equal to the difference between the upper limit value of the second temperature setting range and a second numerical value; If the second preset condition is not satisfied, a third control signal is generated and sent to the micro control unit, so that the micro control unit gradually reduces the output voltage and the output current provided to the active heat dissipation component according to the third control signal.

4. The temperature control implementation method according to claim 3, wherein It further includes: If it is monitored that there is a target component in the heat generating component, a fourth control signal is generated to the target component, so that the target component switches to a stop working state, and the target component is the heat generating component with a temperature value lower than the corresponding maximum temperature value.

5. The temperature control implementation method according to claim 3, wherein, The step of obtaining the instantaneous thermal power of the thermoelectric cooler at the first moment according to the ninth temperature at the first moment and the fifth temperature at the first moment includes: Substituting the ninth temperature of the hot surface of the thermoelectric cooler at the first moment and the fifth temperature of the system-on-chip at the first moment into the following formula (1) to calculate the instantaneous thermal power; （1） Wherein, is the instantaneous thermal power, is the Seebeck coefficient of the thermoelectric cooler, is the output current provided by the microcontroller unit to the active heat dissipation component, is the equivalent resistance of the thermoelectric cooler, is the temperature difference between the cold surface and the hot surface of the thermoelectric cooler, and the temperature difference is equal to the difference between the ninth temperature of the hot surface of the thermoelectric cooler at the first moment and the fifth temperature of the system-on-chip at the first moment.

6. The temperature control implementation method according to claim 3, wherein The step of calculating the predicted temperature of the motherboard area at the second moment according to the instantaneous thermal power, the instantaneous power of the motherboard, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment includes: Substituting the instantaneous thermal power, the instantaneous power of the motherboard, the heat capacity value, the second moment, the first moment, and the initial temperature corresponding to the first moment into the following formula (2) to calculate the predicted temperature; （2） Wherein, is the predicted temperature corresponding to the second moment, is the heat capacity value of the main board area at the first moment, is the first moment, is the second moment, is the instantaneous power of the main board area at the first moment, is the instantaneous heat power of the thermoelectric cooler at the first moment, is the initial temperature of the main board area at the first moment.

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