Nanorod light-emitting device, manufacturing method thereof and display device

Abstract

The invention provides a nanorod light-emitting device, a manufacturing method thereof and a display device. A nanorod light emitting device includes an n-type semiconductor layer, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer on the active layer, the n-type semiconductor layer including a mandrel, a plurality of nanopores open in an outward direction from the mandrel, and a plurality of quantum dots dispersed in the plurality of nanopores.

Description

Technical Field

[0001] The present disclosure relates to a nanorod light emitting device having improved light emitting efficiency, a method of manufacturing the nanorod light emitting device, and a display device including the nanorod light emitting device. Background Art

[0002] Compared with existing light sources, light emitting diodes (LEDs) are considered to be the next generation light sources with advantages such as long life, low power consumption, fast response speed, and environmental friendliness, and due to these advantages, their industrial demand is increasing. LEDs have been widely used and used in various products such as lighting devices and backlights of display devices.

[0003] Recently, ultra-small LEDs in micrometer units or nanometer units using II-VI or III-V compound semiconductors have been developed. In addition, micro LED displays that directly use such ultra-small LEDs as light-emitting elements of display pixels have been developed. However, when LEDs are miniaturized in micrometer units or nanometer units, their luminous efficiency deteriorates. Summary of the invention

[0004] According to one aspect of the present disclosure, a nanorod light-emitting device is provided, which includes: an n-type semiconductor layer; an active layer on the n-type semiconductor layer; and a p-type semiconductor layer on the active layer, the n-type semiconductor layer includes a core rod, a plurality of nanoholes open in an outward direction from the core rod, and a plurality of quantum dots dispersed in the plurality of nanoholes.

[0005] In a horizontal cross-section of the n-type semiconductor layer, the plurality of nanoholes may be radially arranged from the core rod.

[0006] In a vertical cross-section of the n-type semiconductor layer, the plurality of nanoholes may be arranged in a vertical direction.

[0007] The active layer may include at least one of indium gallium nitride (InGaN) and indium aluminum gallium nitride (InAlGaN).

[0008] Nanorod light emitting devices may include diameters in the range of 0.5 μm to 2 μm.

[0009] Nanorod light emitting devices may include a height in the range of 2 μm to 7 μm.

[0010] The diameter of the core rod may be in the range of 1 / 3 to 1 / 5 of the diameter of the nanorod light emitting device.

[0011] The diameter of the core rod may be in the range of 120 nm to 200 nm.

[0012] The plurality of quantum dots may be configured to convert blue light emitted by the active layer into red light.

[0013] The nanorod light emitting device may further include a superlattice layer between the n-type semiconductor layer and the active layer.

[0014] The nanorod light emitting device may further include a current blocking layer between the active layer and the p-type semiconductor layer.

[0015] Each of the plurality of nanoholes may have a first length in a diameter direction of the n-type semiconductor layer and a second length in a direction perpendicular to the diameter direction, the first length being greater than the second length.

[0016] According to one aspect of the present disclosure, a display device is provided, which includes: a plurality of pixel electrodes; a common electrode corresponding to the plurality of pixel electrodes; a plurality of nanorod light-emitting devices connected between each of the plurality of pixel electrodes and the common electrode; and a driving circuit layer configured to drive the plurality of nanorod light-emitting devices, each of the plurality of nanorod light-emitting devices including an n-type semiconductor layer, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer on the active layer, the n-type semiconductor layer including a core rod, a plurality of nanoholes opened in an outward direction from the core rod, and a plurality of quantum dots dispersed in the plurality of nanoholes.

[0017] In a horizontal cross-section of the n-type semiconductor layer, the plurality of nanoholes may be radially arranged from the core rod.

[0018] In a vertical cross-section of the n-type semiconductor layer, the plurality of nanoholes may be arranged in a vertical direction.

[0019] The active layer may include at least one of indium gallium nitride (InGaN) and indium aluminum gallium nitride (InAlGaN).

[0020] According to one aspect of the present disclosure, a method for manufacturing a nanorod light-emitting device includes: forming an n-type semiconductor layer on a substrate; forming an active layer on the n-type semiconductor layer; forming a p-type semiconductor layer on the active layer; forming a plurality of nanorod light-emitting structures by patterning the n-type semiconductor layer, the active layer and the p-type semiconductor layer in the form of a plurality of nanorods; forming a core rod and a plurality of nanoholes open from the core rod in an outward direction in the n-type semiconductor layer of the plurality of nanorod light-emitting structures by an electrochemical etching process; and encapsulating quantum dots in the plurality of nanoholes.

[0021] In a horizontal cross-section of the n-type semiconductor layer, the plurality of nanoholes may be radially arranged from the core rod.

[0022] In a vertical cross-section of the n-type semiconductor layer, the plurality of nanoholes may be arranged in a vertical direction. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] These and / or other aspects will become apparent and more readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0024] Figure 1 is a schematic diagram of a nanorod light emitting device according to one or more embodiments;

[0025] Figure 2 It is along Figure 1 A cross-sectional view of the nanorod light-emitting device taken along line AA;

[0026] Figure 3 It shows that Figure 1 A view of an example of a nanorod light emitting device further comprising a superlattice layer and an electron blocking layer;

[0027] Figure 4 It shows that Figure 3 A view of an example of a nanorod light emitting device further comprising a passivation film;

[0028] Figure 5 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0029] Figure 6 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0030] Figure 7 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0031] Figure 8 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0032] Fig. 9 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0033] Fig.10 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0034] Fig.11 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0035] Fig.12 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0036] Fig.13 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0037] Fig.14 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0038] Fig.15 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0039] Fig.16 A portion showing a method of manufacturing a nanorod light emitting device according to one or more embodiments;

[0040] Fig.17 is a schematic diagram of a display device according to one or more embodiments;

[0041] Fig.18 is a view showing an array layer of a display device according to one or more embodiments;

[0042] Fig.19 is a schematic block diagram of an electronic device according to one or more embodiments;

[0043] Fig. 20 is a view showing an example in which a display device according to one or more embodiments is applied to a mobile device;

[0044] Fig.21 is an example showing a display device in which a display device according to one or more embodiments is applied to a vehicle;

[0045] Fig. 22 is a view showing an example in which a display device according to one or more embodiments is applied to augmented reality glasses;

[0046] Fig.23 is a view showing an example in which a display device according to one or more embodiments is applied to a sign; and

[0047] Fig.24 2 is a view showing an example in which a display device according to one or more embodiments is applied to a wearable display. DETAILED DESCRIPTION

[0048] Now will refer to the embodiment in detail, examples of which are shown in the accompanying drawings, wherein the same reference numerals always refer to the same elements. In this regard, the embodiment can have different forms and should not be construed as being limited to the description set forth herein. Therefore, the following only describes the embodiment to illustrate various aspects by referring to the accompanying drawings. As used herein, the term "and / or" includes any and all combinations of one or more related listed items. When after a column of elements, a statement such as "at least one of ..." modifies the entire column of elements without modifying the individual elements in the column. For example, the statement "at least one of A and B" means only A, only B, or both A and B.

[0049] Hereinafter, a nanorod light-emitting device according to various embodiments, a method for manufacturing the nanorod light-emitting device, and a display device including the nanorod light-emitting device will be described in detail with reference to the accompanying drawings. In all the drawings, the same reference numerals represent the same elements, and the sizes of the components in the drawings may be exaggerated for ease of description and clarity. Terms such as "first" and "second" are used here only to describe various constituent elements, but these constituent elements are not limited by these terms. Such terms are only used for the purpose of distinguishing one constituent element from another constituent element.

[0050] As used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. When a component may "include" a certain constituent element, unless otherwise specified, it may not be interpreted as excluding another constituent element, but may be interpreted as also including other constituent elements. In addition, for clarity of illustration, the size or thickness of each constituent element shown in the drawings may be exaggerated. In addition, when a material layer is described as being present on another layer, the material layer may be present directly on the other layer, or a third layer may be interposed between them. Since the materials forming each layer in the following embodiments are exemplary, other materials may be used.

[0051] Furthermore, in the present disclosure, a “module” or a “part” may perform at least one function or operation and may be implemented by hardware or software or a combination of hardware and software.

[0052] The specific implementations shown and described here are illustrative examples of the present disclosure and are not intended to limit the scope of the present disclosure in any way. For the sake of brevity, other functional aspects of traditional electronic devices, control systems, software development and systems may not be described in detail. In addition, the connecting wires or connectors shown in the various accompanying drawings presented are intended to represent the functional relationship and / or physical or logical connection between the various elements. It should be noted that many alternative or additional functional relationships, physical connections or logical connections may exist in actual devices.

[0053] The use of the terms "a," "an," "the" and similar referents in the context of describing the present disclosure are to be construed to cover both the singular and the plural.

[0054] The steps of all methods described herein can be performed in any suitable order, unless otherwise indicated herein or otherwise clearly contradictory to the context. In addition, the use of any and all examples or languages ​​(e.g., "such as") provided herein is only intended to better illustrate the present disclosure, and does not limit the scope of the present disclosure, unless otherwise stated.

[0055] Figure 1 A nanorod light emitting device 100 according to one or more embodiments is shown.

[0056] The nanorod light emitting device 100 may include a first semiconductor layer 110, an active layer 120 provided on the first semiconductor layer 110, and a second semiconductor layer 130 provided on the active layer 120. The first semiconductor layer 110 and the second semiconductor layer 130 may each include a II-VI group or a III-V group compound semiconductor material. The first semiconductor layer 110 and the second semiconductor layer 130 provide electrons and holes to the active layer 120, respectively. To this end, the first semiconductor layer 110 may be doped to an n-type or a p-type, and the second semiconductor layer 130 may be doped to a type electrically opposite to that of the first semiconductor layer 110. For example, the first semiconductor layer 110 may be doped to an n-type and the second semiconductor layer 130 may be doped to a p-type, or the first semiconductor layer 110 may be doped to a p-type and the second semiconductor layer 130 may be doped to an n-type. When the first semiconductor layer 110 or the second semiconductor layer 130 is doped to n-type, for example, Si, Ge or Sn may be used as a dopant, and when the first semiconductor layer 110 or the second semiconductor layer 130 is doped to p-type, for example, Mg, Zn, Ca, Se or Ba may be used as a dopant. The first semiconductor layer 110 or the second semiconductor layer 130 doped to n-type may provide electrons to the active layer 120, and the second semiconductor layer 130 or the first semiconductor layer 110 doped to p-type may provide holes to the active layer 120. In the following description, a case is described in which the first semiconductor layer 110 is an n-type semiconductor layer and the second semiconductor layer 130 is a p-type semiconductor layer. The first semiconductor layer 110 may include an n-type semiconductor based on the III-V group, for example, n-GaN. The second semiconductor layer 130 may include a p-type semiconductor based on the III-V group, for example, p-GaN. The first semiconductor layer 110 and the second semiconductor layer 130 may each have a single layer or a multilayer structure.

[0057] The active layer 120 may include a nitride semiconductor. For example, the active layer 120 may include a GaN-based material. In this case, the active layer 120 may include an undoped GaN-based material or a GaN-based material doped with certain impurities. For example, the active layer 120 may include InGaN or InAlGaN.

[0058] The active layer 120 may have a quantum well structure in which quantum wells are arranged between potential barriers. When electrons and holes provided from the first semiconductor layer 110 and the second semiconductor layer 130 recombine with each other in the quantum wells in the active layer 120, light may be generated. The wavelength of the light generated in the active layer 120 may be determined according to the energy band gap of the material forming the quantum well in the active layer 120. The active layer 120 may have only a single quantum well, or a multi-quantum well (MQW) structure in which a plurality of quantum wells and a plurality of potential barriers are alternately arranged. Considering the driving voltage, luminous efficiency, etc. of the nanorod light emitting device 100, the thickness of the active layer 120 or the number of quantum wells in the active layer 120 may be appropriately selected. The active layer 120 may have a multi-quantum well structure, for example, a quantum well structure including InGaN / GaN.

[0059] The nanorod light emitting device 100 may have the form of a nanorod having a very small size of nanometer or micrometer scale. For example, the nanorod light emitting device 100 may have a diameter D1 of about 0.5 μm to about 2 μm. When the diameter of the nanorod light emitting device 100 is not uniform, the diameter D1 may represent the maximum diameter. The nanorod light emitting device 100 may have an approximately uniform diameter along the height direction. For example, the diameters of the first semiconductor layer 110, the active layer 120, and the second semiconductor layer 130 may be substantially the same. In addition, assuming that the length from the lower surface of the first semiconductor layer 110 to the upper surface of the second semiconductor layer 130 is the height H of the nanorod light emitting device 100, the height H may have a range of about 2 μm to about 7 μm. In addition, the nanorod light emitting device 100 may have an aspect ratio of, for example, 4 or more. For example, the diameter D1 of the nanorod light emitting device 100 may be selected to be about 600 nm, and its height H may be selected to be about 5 μm. In this case, the aspect ratio of the nanorod light emitting device 100 may be slightly greater than 8.

[0060] The first semiconductor layer 110 may include a core rod 112 and a plurality of nanoholes 115 opened in an outward direction from the core rod 112. The core rod 112 may represent a central region of the first semiconductor layer 110 where the nanohole 115 does not exist. The nanorod light emitting device 100 may have a cylindrical structure. However, the shape of the nanorod light emitting device 100 is not limited thereto, and the nanorod light emitting device 100 may have various rod structures, such as a square column, a pentagonal column, a hexagonal column, etc. The first semiconductor layer 110 may have a relatively large height compared to the active layer 120 or the second semiconductor layer 130. The first semiconductor layer 110 may have a relatively large height compared to its diameter.

[0061] The diameter D2 of the core rod 112 may have a range of about 1 / 5 to about 1 / 3 of the diameter D1 of the nanorod light emitting device 100. For example, the diameter D2 of the core rod 112 may have a range of about 120 nm to about 200 nm. Figure 2 It is along Figure 1 The cross-sectional view of the nanorod light emitting device 100 is taken along the line AA of FIG. The diameter D1 of the core rod 112 may represent the maximum diameter in any cross-sectional area of ​​the first semiconductor layer 110. The cross-sectional area represents a cross section obtained by cutting the nanorod light emitting device 100 in the diameter direction (x direction), and the vertical cross-sectional area represents a cross section obtained by cutting the nanorod light emitting device 100 in the height direction (y direction). Although Figure 2 The core rod 112 is shown to have an approximately circular cross section, but in reality, the cross section of the core rod 112 may not be a perfect circle, but may have an elliptical or irregular shape. In this case, the diameter D2 of the core rod 112 may represent the distance between the nanopores 115 facing each other in the corresponding cross section, and may represent the maximum diameter in the corresponding cross section.

[0062] The core rod 112 ensures a region having a certain diameter and serves as a path in which current supplied to the nanorod light emitting device 100 effectively flows, thereby improving electrical stability. In addition, the core rod 112 may be provided in a central region of the nanorod light emitting device 100, thus providing structural stability.

[0063] Reference Figure 2 , the nanopores 115 are open outward from the core rod 112. When viewed from a cross section of the first semiconductor layer 110, the nanopores 115 may be arranged radially from the core rod 112. The nanopores 115 may be arranged outside the first semiconductor layer 110 relative to the core rod 112. In addition, the nanopores 115 may each have a shape in which the length L1 of the first semiconductor layer 110 in the diameter direction is relatively greater than the length L2 in the direction perpendicular to the diameter direction. Return to reference Figure 1, the nanoholes 115 may be arranged to be spaced apart from each other in a vertical direction (y direction) in a vertical cross section of the first semiconductor layer 110 .

[0064] A plurality of quantum dots 117 are dispersed in the nanopores 115. The quantum dots 117 each have a size of several nanometers, include an inorganic material, and have an energy band gap of a specific wavelength, so when absorbing light with energy higher than the energy band gap, the quantum dots 117 emit light of a different wavelength, thereby performing color conversion. The quantum dots 117 each have a narrow emission wavelength band, thereby increasing the color reproduction of the display device.

[0065] The quantum dots 117 may each have a core-shell structure having a core portion and a shell portion, or a particle structure without a shell. The core-shell structure may include a single shell structure or a multi-shell structure (eg, a double shell structure).

[0066] The quantum dot 117 may include semiconductors based on II-VI groups, semiconductors based on III-V groups, semiconductors based on IV-VI groups, semiconductors based on IV groups, and / or graphene quantum dots. The quantum dot 117 may each include, for example, any one or more of Cd, Se, Zn, S, and InP, and may each have a diameter of tens of nanometers or less, for example, about 10nm or less. The quantum dot 117 may each include compounds, such as CdSe, CdTe, InP, InAs, InSb, PbSe, PbS, PbTe, AlAs, ZnS, ZnSe, ZnTe, graphene, etc. The quantum dot 117 may each absorb light in a specific wavelength band and emit light in a wavelength band longer than the wavelength band of the absorbed light. The wavelength of the light absorbed by the quantum dot 117 may vary according to the energy band gap of the quantum dot 117. The energy band gap of the quantum dot 117 may vary according to its material or size. The quantum dots 117 may each emit blue light according to its material or size, or emit green light or red light when excited by ultraviolet rays. For example, the quantum dots 117 may be configured to convert blue light emitted from the active layer 120 into red light.

[0067] When the active layer 120 includes indium (In), the more the content of In, the longer the wavelength of light emitted from the active layer 120. For example, when the indium content of the active layer 120 is 15% or about 15%, the active layer 120 may emit blue light having a wavelength of 450nm or about 450nm; when the indium content of the active layer 120 is 25% or about 25%, the active layer 120 may emit green light having a wavelength of 520nm or about 520nm; when the indium content of the active layer 120 is 35% or about 35%, the active layer 120 may emit red light having a wavelength of 630nm or about 630nm. By adjusting the indium content of the active layer 120 to 15% or about 15% or less, the active layer 120 may emit blue light.

[0068] When the nanorod light emitting device 100 has a very small size of the nanometer scale, the external quantum efficiency (EQE) and the internal quantum efficiency (IQE) of the active layer 120 may decrease as the emission wavelength increases. In addition, as the indium content of the active layer 120 increases, defects due to lattice mismatch may increase. Therefore, by configuring the active layer 120 to generate light in a short wavelength band with relatively high luminous efficiency and configuring the quantum dots 117 to convert light having a relatively short wavelength into light having a relatively long wavelength, the luminous efficiency of the nanorod light emitting device 100 can be improved.

[0069] Figure 3 It shows that Figure 1 FIG. 1 is a diagram showing an example of a nanorod light emitting device 100 further comprising a superlattice layer and an electron blocking layer. Figure 3 In the Figure 1 Elements having the same reference numerals as shown in FIG. 1 are substantially the same, so their detailed description is omitted.

[0070] The nanorod light emitting device 100A may further include a superlattice layer 122 between the first semiconductor layer 110 and the active layer 120 .

[0071] The superlattice layer 122 may include, for example, an InGaN / GaN superlattice layer, an AlN / GaN superlattice layer, or an Al x1 In y1 Ga (1-x1-y1) N / A x2 In y2 Ga (1-x2-y2) N (0≤x1, x2, y1, y2≤1 and x1≠x2 or y1≠y2) superlattice layers. The superlattice layer 122 can reduce current diffusion and strain under the active layer 120. The superlattice layer 122 has a structure in which a first layer and a second layer are alternately stacked, for example, an InGaN / GaN superlattice layer may include an InGaN layer and a GaN layer alternately arranged. The superlattice layer 122 may have a band gap larger than the band gap of the active layer 120 to prevent light from being emitted from the superlattice layer 122 or absorbed by the superlattice layer 122. For example, the active layer 120 may be formed by stacking 10 pairs of InGaN layers. 15 Ga 75 The superlattice layer 122 can be formed by stacking 30 pairs of In 5 Ga 95 The superlattice layer 122 has an In content smaller than that of the active layer 120 , and may be configured as a thin layer having a thickness smaller than that of the active layer 120 .

[0072] The electron blocking layer 125 may be provided between the active layer 120 and the second semiconductor layer 130. The electron blocking layer 125 may include AlGaN, AlInN, or AlInGaN. The electron blocking layer 125 may have a thickness of 3 nm or more. The electron blocking layer 125 may prevent tunneling to effectively block leakage of electrons.

[0073] Figure 4 It shows that Figure 3 FIG. 1 is a view of an example in which the nanorod light emitting device 100A further includes a passivation film 140 .

[0074] The nanorod light emitting device 100B may further include a passivation film 140 on a sidewall of the first semiconductor layer 110 , a sidewall of the active layer 120 , and a sidewall of the second semiconductor layer 130 .

[0075] The passivation film 140 may be formed by crystal growth of a material having a structure similar to that of the active layer 120. In this case, the passivation film 140 may have an epitaxial relationship with the active layer 120. In other words, a heterojunction is formed at the interface between the passivation film 140 and the active layer 120. The passivation film 140 may include an insulating crystalline material having a crystal structure identical to that of the active layer 120. The passivation film 140 may have a lattice matching epitaxial relationship or a domain matching epitaxial relationship with the active layer 120. The lattice matching epitaxial relationship indicates a relationship in which the lattice constant of the passivation film 140 is almost the same as that of the active layer 120. In addition, the domain matching epitaxial relationship indicates a relationship in which the lattice constant of the passivation film 140 is almost equal to an integer multiple of the lattice constant of the active layer 120 or the lattice constant of the active layer 120 is almost equal to an integer multiple of the lattice constant of the passivation film 140. For example, the difference between the lattice constant m2 of the passivation film 140 and the lattice constant m1 of the active layer 120 may be within ±30% of the lattice constant m1. Thus, dangling bonds at the outer surface of the active layer 120 are removed, and thus surface defects occurring at the outer surface of the active layer 120 may be removed. Therefore, as the surface defects of the active layer 120 are restored, the light emitting efficiency of the nanorod light emitting device 100B may be improved.

[0076] In the following description, reference is made to Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 and Fig.16 A method of manufacturing a nanorod light emitting device according to one or more embodiments is described.

[0077] Reference Figure 5 , a first semiconductor layer 210, an active layer 220, and a second semiconductor layer 230 may be formed on a substrate 201. The first semiconductor layer 210 may be an n-type semiconductor layer, and may include, for example, n-type GaN. The active layer 220 may have a single quantum well structure or a multi-quantum well structure. The active layer 220 may include InGaN or InAlGaN. The second semiconductor layer 230 may be a p-type semiconductor layer, and may include, for example, p-type GaN. A sacrificial layer 203 may be formed between the substrate 201 and the first semiconductor layer 210.

[0078] The substrate 201 and the sacrificial layer 203 may include a II-VI or III-V compound semiconductor material. The substrate 201 and the sacrificial layer 203 may each be doped to the same conductivity type as the first semiconductor layer 210. For example, when the first semiconductor layer 210 is doped to an n-type, the substrate 201 and the sacrificial layer 203 may each include n-GaAs. The substrate 201 may be doped to a concentration lower than that of the sacrificial layer 203, and the sacrificial layer 203 may be doped to a concentration higher than that of the substrate 201. A contact layer for ohmic contact may be further arranged between the sacrificial layer 203 and the first semiconductor layer 210. The contact layer between the sacrificial layer 203 and the first semiconductor layer 210 may be doped to the same conductivity type as the first semiconductor layer 210 and doped to a higher doping concentration than each of the sacrificial layer 203 and the first semiconductor layer 210.

[0079] A contact layer 232 may be further formed on the second semiconductor layer 230. The contact layer 232 may be disposed on the second semiconductor layer 230 to provide an ohmic contact. The contact layer 232 may be doped to the same conductivity type as the second semiconductor layer 230. For example, when the second semiconductor layer 230 is doped to a p-type, the contact layer 232 may be doped to a p-type. The contact layer 232 may include, for example, GaInP or GaAs. However, according to one or more embodiments, the contact layer 232 may be omitted.

[0080] After stacking materials for forming the nanorod light emitting device, a plurality of nanorod light emitting devices may be manufactured by partially etching the epitaxial wafer 200 in which the materials are stacked. To this end, a first hard mask 240 and a second hard mask 242 may be formed on the contact layer 232 .

[0081] Reference Figure 6, a soft mask 245 may be formed on the second hard mask 242. The soft mask 245 may include a photoresist. For example, the soft mask 245 may be formed by forming a photoresist layer on the second hard mask 242 and patterning the photoresist layer using a photolithography process. Thus, a portion of the upper surface of the second hard mask 242 may be exposed between the nano-patterns of the soft mask 245.

[0082] The first hard mask 240 may include an oxide mask material having high selectivity to the semiconductor material of the first semiconductor layer 210 and the second semiconductor layer 230. The first hard mask 240 may have a thickness of about 1 / 5 to about 1 / 10 of the thickness between the first semiconductor layer 210 and the second semiconductor layer 230 or between the first semiconductor layer 210 and the contact layer 232. For example, the first hard mask 240 may have a thickness of about 200 nm to about 2 μm. The second hard mask 242 may include a metal mask material having a higher selectivity than the material of the first hard mask 240. The second hard mask 242 may have a thickness of about 1 / 5 to about 1 / 8 of the thickness of the first hard mask 240. For example, considering the selectivity to the first hard mask 240 and the thickness of the first hard mask 240, the second hard mask 242 may be formed to have a thickness of about 25 nm to about 400 nm. For example, the first hard mask 240 may include SiO 2 , the second hard mask 242 may include chromium (Cr), aluminum (Al), tungsten (W), titanium (Ti), silver (Ag), or gold (Au).

[0083] Reference Figure 7 , the second hard mask 242 exposed between adjacent nano patterns of the soft mask 245 can be etched. The second hard mask 242 can be etched by using, for example, a chlorine-based gas as an etchant gas and by using an inductively coupled plasma (ICP) device or a reactive ion etching (RIE) device in a dry etching manner. The pattern of the second hard mask 242 can have a shape of two-dimensionally arranged dots, and the first hard mask 240 can be partially exposed between adjacent patterns of the second hard mask 242, thereby etching the first hard mask 240. The first hard mask 240 can be etched by using, for example, a fluorine-based gas or an argon (Ar) gas as an etchant gas and by using an ICP device or a RIE device in a dry etching manner. For example, CF 4 and CHF 3 Mixed gas, or CF 3 A mixed gas of Ar and Ar, or Ar gas alone can be used as an etching gas. Figure 7 , the contact layer 232 is etched by using the first hard mask 240, and thus, a contact 232a may be formed.

[0084] Reference Figure 8, a plurality of nanorod light emitting devices may be formed by partially dry-etching the second semiconductor layer 230, the active layer 220, and the first semiconductor layer 210 using the first hard mask 240. Each nanorod light emitting device may include a first semiconductor layer 210a, an active layer 220a, and a second semiconductor layer 230a, each having a nanometer-sized diameter. For example, a chlorine-based gas may be used as an etchant gas and hydrogen H may be supplied to the chamber for plasma ignition and used as an activator. 2 、N 2 The etching may be performed using argon Ar or a mixed gas thereof. The etching may be performed until the lower portion of the first semiconductor layer 210a is exposed. Alternatively, the etching may be performed until the sacrificial layer 203 is exposed.

[0085] Then, the remaining first hard mask 240 and second hard mask 242 can be removed. Thus, a plurality of nanorod light-emitting devices can be formed all at once on the substrate 201 and the sacrificial layer 203. The above-mentioned dry etching can be performed only on a portion of the first semiconductor layer 210a, and the etching can be stopped in the lower portion of the first semiconductor layer 210a. Thus, the lower region of the first semiconductor layer 210a can be left without being completely etched. In this case, the lower portion of the first semiconductor layer 210a can extend laterally along the upper surface of the sacrificial layer 203 to be connected to each other. After the dry etching process, the diameter of the nanorod light-emitting device can be made more uniform in the height direction by using a wet process such as a KOH solution or a tetramethylammonium hydroxide (TMAH) solution.

[0086] Next, Fig. 9 is a schematic diagram of the electrochemical etching apparatus.

[0087] Figure 8 The structure 200A shown may be immersed in an electrolyte solution 204. For example, an approximately 0.2 M (mol / L) oxalic acid solution or an approximately 0.3 M sodium nitrate (NaNO 3 ) solution is used as the electrolyte solution 204. Thereafter, a positive voltage may be applied to the structure 200A, and a negative voltage may be applied to the electrolyte solution 204. The negative electrode 202 may be immersed in the electrolyte solution 204. The material of the negative electrode 202 may include, for example, platinum (Pt).

[0088] According to the electrochemical etching method of one or more example embodiments, etching can be performed by immersing the sample to be etched in a specific solvent and connecting electrodes to the sample and the solvent to generate carriers by an external bias. In the electrochemical etching method, a method of directly connecting the electrodes to the sample can be adopted, or a method of indirectly connecting the electrodes by using two chambers can be adopted.

[0089] When a voltage is applied to the structure 200A connected to the electrode, selective etching can be performed in the first semiconductor layer 210a under certain conditions. By selectively applying a voltage, etching can be performed in the side portion of the first semiconductor layer 210a with relatively excellent carrier confinement. The depth of etching can be adjusted by etching time and voltage. For example, a voltage of 10V to 20V can be applied for 5 minutes to 20 minutes. The etchant may include, for example, KOH, NaOH, HCl, C 2 H 2 O 4 , H 2 SO 4 , HNO 3 and HF. Fig.10 , a plurality of nanoholes 215 are formed when the first semiconductor layer 210 is selectively etched, and the core rod 212 may be formed at a central portion of the first semiconductor layer 210 .

[0090] Reference Fig.11 , Fig.10 The structure 200A (including the nanopore 215 formed therein) is immersed in a liquid 250 containing quantum dots. Then, as Fig.12 As shown, quantum dots 217 may fill the interior of the nanopore 215. Filling the nanopore 215 with quantum dots may include a dipping method or a spin coating method. Each quantum dot 217 may have a diameter of 5 nm to 7 nm. When the nanopore 215 is filled with quantum dots 217, the scattering effect of light incident on the first semiconductor layer 210a increases, thereby increasing the color conversion efficiency.

[0091] Reference Fig.13 , the passivation film 252 may be formed on the surface of the structure 200A to have a uniform thickness. The passivation film 252 may be formed by an atomic layer deposition method. The passivation film 252 may protect the nanorod light emitting device from external physical and chemical impacts and prevent current leakage by insulating the nanorod light emitting device. For example, the passivation film 252 may include an insulating material.

[0092] Alternatively, the passivation film 252 may include an insulating crystalline material having the same crystal structure as that of the active layer 220a. The passivation film 252 may have a lattice matching epitaxial relationship or a domain matching epitaxial relationship with the active layer 220a. The passivation film 252 may include, for example, ZrO, SrO, MgO, BaO, CeO 2 , Gd 2 O 3 , CaO, HfO 2 、TiO 2 、AlO x, BaN, SiN, TiN, CeN, AlN, ZnSe, ZnS, AlGaN and Al x Ga 1-x At least one of As (x ≥ 0.9).

[0093] Reference Fig.14 , the passivation film 252 remaining on the upper surface of the structure 200A may be removed by dry etching. The remaining passivation film 252 may surround the sidewalls of the structure 200A. The nanorod light emitting device may be individually separated from the structure 200A by removing or cutting the sacrificial layer 203.

[0094] Fig.15 is an image showing a nanorod light-emitting device manufactured by the above-mentioned manufacturing method. Fig.16 It is shown along Fig.15 The image of the cross section of the nanorod light-emitting device taken along line BB. Fig.16 , the nanoholes 215 are provided radially, and the core rod 212 without the nanoholes 215 is provided. The core rod 212 can be used as a path through which the current supplied to the nanorod light-emitting device flows, so that electrical stability can be ensured. In addition, since the core rod 212 is provided at the central portion of the first semiconductor layer 210a of the nanorod light-emitting device, structural stability can be ensured. In addition, the wavelength of light emitted from the active layer 220a is converted by the quantum dots 217 encapsulated in the nanoholes 215, so that the nanorod light-emitting device can have an EQE of 10% or more.

[0095] By cutting the substrate 201 and the sacrificial layer 203 in the vertical direction, each nanorod light emitting device can be used in a state where the substrate 201 and the sacrificial layer 203 are attached to each nanorod light emitting device. Alternatively, the substrate 201 and the sacrificial layer 203 are cut in the vertical direction so that two or more nanorod light emitting devices are left, and the two or more nanorod light emitting devices can be used together.

[0096] For example, AlGaInP red LEDs exhibit high luminous efficiency at sizes of 100 μm × 100 μm or more, but as the size decreases, the efficiency decreases dramatically. For example, EQE may be less than 0.5%. Compared with AlGaInP red LEDs, InGaN red LEDs are relatively less affected by size, but the In content increases to about 35% at a wavelength of 630 nm, so that due to lattice mismatch, IQE and EQE may be reduced to 20% or less and 5% or less, respectively. In contrast, in a nanorod light-emitting device according to one or more embodiments, an EQE of 10% or more can be ensured even at a nanometer size.

[0097] Fig.173 is a schematic diagram of a display device 300 according to one or more embodiments. The display device 300 may include a display substrate 310 including a driving circuit, an array layer 320 provided on the display substrate 310, and a controller 330 for inputting an image signal to the display substrate 310. The driving circuit may include at least one transistor and at least one capacitor. A plurality of nanorod light emitting devices may be arranged in the array layer 320.

[0098] Fig.18 An array layer 320 is shown.

[0099] A plurality of first nanorod light emitting devices 321, a plurality of second nanorod light emitting devices 322, and a plurality of third nanorod light emitting devices 323 are arranged in the array layer 320. The first nanorod light emitting devices 321, the second nanorod light emitting devices 322, and the third nanorod light emitting devices 323 can be used as light emitting elements of pixels of a next generation display device. Figure 1 , Figure 2 , Figure 3 and Figure 4 The description can be applied to the first nanorod light emitting device 321, the second nanorod light emitting device 322, and the third nanorod light emitting device 323. The array layer 320 may include a plurality of pixel electrodes 325, a common electrode 326 corresponding to the pixel electrodes 325, and the first nanorod light emitting device 321, the second nanorod light emitting device 322, and the third nanorod light emitting device 323 respectively connected between the corresponding pixel electrodes 325 and the common electrode 326.

[0100] For example, the first nanorod light emitting device 321 may be configured to emit blue light, the second nanorod light emitting device 322 may be configured to emit green light, and the third nanorod light emitting device 323 may be configured to emit red light.

[0101] Fig.19 is a block diagram of an electronic device 8201 including a display device according to one or more embodiments.

[0102] Reference Fig.19, the electronic device 8201 may be provided in a network environment 8200. In the network environment 8200, the electronic device 8201 may communicate with another electronic device 8202 through a first network 8298 (short-range wireless communication network, etc.), or may communicate with another electronic device 8204 and / or a server 8208 through a second network 8299 (long-range wireless communication network, etc.). The electronic device 8201 may communicate with another electronic device 8204 through a server 8208. The electronic device 8201 may include a processor 8220, a memory 8230, an input device 8250, an audio output device 8255, a display device (equipment) 8260, an audio module 8270, a sensor module 8276, an interface 8277, a haptic module 8279, a camera module 8280, a power management module 8288, a battery 8289, a communication module 8290, a user identification module 8296, and / or an antenna module 8297. In the electronic device 8201, some of the elements may be omitted or additional elements may be added. Some of these elements may be implemented as an integrated circuit. For example, the sensor module 8276 (fingerprint sensor, iris sensor, illumination sensor, etc.) may be implemented by being embedded in the display device 8260 (display, etc.).

[0103] The processor 8220 can control one or more other elements (hardware or software elements, etc.) of the electronic device 8201 by executing software (program 8240, etc.) and perform various data processing or operations. As part of data processing or operation, the processor 8220 can load commands and / or data received from other elements (sensor module 8276, communication module 8290, etc.) in the volatile memory 8232, process the commands and / or data stored in the volatile memory 8232, and store the result data in the non-volatile memory 8234. The non-volatile memory 8234 may include an internal memory 8236 and an external memory 8238. The processor 8220 may include a main processor 8221 (central processing unit, application processor, etc.) and an auxiliary processor 8223 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate alone or together. The auxiliary processor 8223 may consume less power than the main processor 8221 and may perform specialized functions.

[0104] The auxiliary processor 8223 may control functions and / or states related to some elements (display device 8260, sensor module 8276, communication module 8290, etc.) of the electronic device 8201, replacing the main processor 8221 when the main processor 8221 is in an inactive state (sleep state) or together with the main processor 8221 when the main processor 8221 is in an active state (application execution state). The auxiliary processor 8223 (image signal processor, communication processor, etc.) may be implemented as a part of other functionally related elements (camera module 8280, communication module 8290, etc.).

[0105] The memory 8230 may store various data required by the elements (processor 8220, sensor module 8276, etc.) of the electronic device 8201. The data may include, for example, software (program 8240, etc.) and input data and / or output data about commands related thereto. The memory 8230 may include a volatile memory 8232 and / or a nonvolatile memory 8234.

[0106] The program 8240 may be stored in the memory 8230 as software, and may include an operating system 8242 , middleware 8244 , and / or an application 8246 .

[0107] The input device 8250 may receive commands and / or data to be used in elements (processor 8220, etc.) of the electronic device 8201 from outside (user, etc.) of the electronic device 8201. The input device 8250 may include a remote controller, a microphone, a mouse, a keyboard, and / or a digital pen (stylus, etc.).

[0108] The audio output device 8255 can output audio signals to the outside of the electronic device 8201. The audio output device 8255 can include a speaker and / or a receiver. The speaker can be used for general purposes, such as multimedia playback or recording playback, and the receiver can be used to receive incoming calls. The receiver can be combined as part of the speaker, or implemented as an independent separate device.

[0109] The display device 8260 may visually provide information to the outside of the electronic device 8201. The display device 8260 may include a display, a holographic device or a projector, and a control circuit for controlling such a device. The display device 8260 may include a display device according to one or more embodiments. The display device 8260 may include a touch circuit configured to sense a touch and / or a sensor circuit (pressure sensor, etc.) configured to measure the strength of the force generated by the touch.

[0110] The audio module 8270 can convert sound into an electrical signal, or vice versa, convert an electrical signal into sound. The audio module 8270 can obtain sound through the input device 8250, or output sound through the audio output device 8255 and / or a speaker and / or earphone of another electronic device (another electronic device 8202, etc.) connected to the electronic device 8201 in a wired or wireless manner.

[0111] The sensor module 8276 can sense the operating state (power, temperature, etc.) or external environment state (user state, etc.) of the electronic device 8201, and generate an electrical signal and / or data value corresponding to the sensed state. The sensor module 8276 may include a gesture sensor, a gyroscope sensor, an atmospheric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, a biometric sensor, a temperature sensor, a humidity sensor, and / or an illumination sensor.

[0112] The interface 8277 may support one or more designated protocols for connecting the electronic device 8201 to another electronic device (another electronic device 8202, etc.) in a wired or wireless manner. The interface 8277 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0113] The connection end 8278 may include a connector for physically connecting the electronic device 8201 to another electronic device (another electronic device 8202, etc.). The connection end 8278 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0114] The haptic module 8279 may convert the electrical signal into a mechanical stimulus (vibration, motion, etc.) or an electrical stimulus that the user can perceive through tactile or kinesthetic sense. The haptic module 8279 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0115] The camera module 8280 can capture still images and videos. The camera module 8280 may include a lens assembly including one or more lenses, an image sensor, an image signal processor, and / or a flash. The lens assembly included in the camera module 8280 may collect light emitted from an object as a target of image capture.

[0116] The power management module 8288 may manage power supplied to the electronic device 8201. The power management module 8288 may be implemented as a part of a power management integrated circuit (PMIC).

[0117] The battery 8289 may power the constituent elements of the electronic device 8201. The battery 8289 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0118] The communication module 8290 can establish a wired communication channel and / or a wireless communication channel between the electronic device 8201 and another electronic device (another electronic device 8202, another electronic device 8204, a server 8208, etc.), and support communication through the established communication channel. The communication module 8290 can operate independently of the processor 8220 (application processor, etc.), and can include one or more communication processors that support wired communication and / or wireless communication. The communication module 8290 may include a wireless communication module 8292 (cellular communication module, short-range wireless communication module, global navigation satellite system (GNSS) communication module, etc.) and / or a wired communication module 8294 (local area network (LAN) communication module, power line communication module, etc.). Among the above communication modules, the corresponding communication module can communicate with another electronic device through a first network 8298 (short-range communication network, such as Bluetooth, WiFi Direct or Infrared Data Association (IrDA)) or a second network 8299 (long-range communication network, such as a cellular network, the Internet or a computer network (LAN, WAN, etc.)). These various types of communication modules may be integrated into one component (single chip, etc.), or may be implemented as multiple separate components (multiple chips). The wireless communication module 8292 may verify and authenticate the electronic device 8201 in a communication network such as the first network 8298 and / or the second network 8299 by using user information (International Mobile Subscriber Identifier (IMSI) etc.) stored in the user identification module 8296.

[0119] The antenna module 8297 can send signals and / or power to the outside (another electronic device, etc.), or receive signals and / or power from the outside. The antenna may include a transmitter formed in a conductive pattern on a substrate (printed circuit board (PCB), etc.). The antenna module 8297 may include one or more antennas. When the antenna module 8297 includes multiple antennas, the communication module 8290 can select an antenna suitable for a communication method used in a communication network such as a first network 8298 and / or a second network 8299 from among the antennas. Signals and / or power can be sent or received between the communication module 8290 and another electronic device through the selected antenna. Other components (RFIC, etc.) other than the antenna may be included as part of the antenna module 8297.

[0120] Some of the constituent elements can be connected to each other through a communication method between peripheral devices (bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.), and can exchange signals (commands, data, etc.) with each other.

[0121] Commands or data may be sent or received between the electronic device 8201 and the external electronic device 8204 via a server 8208 connected to the second network 8299. Electronic devices 8202 and 8204 may be of the same or different types as the electronic device 8201. All or part of the operations performed in the electronic device 8201 may be performed in one or more electronic devices (8202, 8204, and 8208). For example, when the electronic device 8201 needs to perform a function or service, the electronic device 8201 may request one or more electronic devices to perform all or part of the function or service instead of performing the function or service. The one or more electronic devices that receive the request may perform additional functions or services associated with the request and send the results of the execution to the electronic device 8201. To this end, cloud computing, distributed computing, and / or client-server computing technologies may be used.

[0122] Fig. 20 An example is shown in which the display device according to one or more embodiments is applied to a mobile device 9100. The mobile device 9100 may include a display device 9110, and the display device 9110 may include a display device according to an embodiment. The display device 9110 may have a foldable structure, for example, a multi-foldable structure.

[0123] Fig.21 9200 is an example of a display device in which a display device according to one or more embodiments is applied to a vehicle. The display device may be a head-up display device 9200 for a vehicle, and may include a display 9210 provided in an area of ​​the vehicle and an optical path changing member 9220 that changes an optical path so that a driver sees an image generated from the display 9210.

[0124] Fig. 22 is a view showing an example in which a display device according to one or more embodiments is applied to augmented reality glasses 9300. The augmented reality glasses 9300 may include a projection system 9310 that forms an image and an element 9320 for guiding the image from the projection system 9310 so that it is seen by the user's eyes. The projection system 9310 may include a display device according to one or more embodiments.

[0125] Fig.239400 is a view showing an example in which a display device according to one or more embodiments is applied to a large sign. The sign 9400 may be used for outdoor advertising using a digital information display, and may control advertising content, etc. through a communication network. The sign 9400 may be used, for example, by referring to Fig.19 The electronic device described is implemented.

[0126] Fig.24 9500 is a view showing an example in which a display device according to one or more embodiments is applied to a wearable display 9500. The wearable display 9500 according to one or more embodiments may include a display device and may be configured to display a display device according to one or more embodiments. Fig.19 The electronic device described is implemented.

[0127] In addition, the display device according to one or more embodiments may be applied to various products such as a rollable TV, a stretchable display, and the like.

[0128] In a nanorod light emitting device and a display device including the same according to various example embodiments, quantum dots are included in a nanohole, thereby improving external quantum efficiency. In a method of manufacturing a nanorod light emitting device according to various example embodiments, a nanohole and a quantum dot are formed in a first semiconductor layer.

[0129] It should be understood that the example embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should generally be considered as available for other similar features or aspects in other embodiments.

[0130] Although example embodiments have been described with reference to the drawings, workers skilled in the art will understand that various changes in form and details may be made therein without departing from the spirit and scope as defined by the following claims.

[0131] This application claims the priority of Korean Patent Application No. 10-2023-0131167 filed in the Korean Intellectual Property Office on September 27, 2023, the disclosure of which is incorporated herein by reference in its entirety.

Claims

1. A nanorod light-emitting device, comprising: n-type semiconductor layer; an active layer on the n-type semiconductor layer; as well as a p-type semiconductor layer on the active layer, The n-type semiconductor layer comprises: Mandrel; a plurality of nanopores opening outwardly from the mandrel; and A plurality of quantum dots are disposed in the plurality of nanopores.

2. The nanorod light-emitting device according to claim 1, wherein: In a horizontal cross section of the n-type semiconductor layer, the plurality of nanoholes are radially arranged from the core rod.

3. The nanorod light-emitting device according to claim 1, wherein: In a vertical cross section of the n-type semiconductor layer, the plurality of nanoholes are arranged in a vertical direction. 4 . The nanorod light emitting device according to claim 1 , wherein the active layer comprises at least one of indium gallium nitride (InGaN) and indium aluminum gallium nitride (InAlGaN). The nanorod light emitting device according to claim 1 , wherein the nanorod light emitting device has a diameter in the range of 0.5 μm to 2 μm. The nanorod light emitting device according to claim 1 , wherein the nanorod light emitting device has a height in the range of 2 μm to 7 μm. 7 . The nanorod light emitting device according to claim 1 , wherein the diameter of the core rod is in the range of 1 / 3 to 1 / 5 of the diameter of the nanorod light emitting device. The nanorod light-emitting device according to claim 1 , wherein the diameter of the core rod is in the range of 120 nm to 200 nm.

9. The nanorod light emitting device of claim 1, wherein the plurality of quantum dots are configured to convert blue light emitted by the active layer into red light. 10 . The nanorod light emitting device according to claim 1 , further comprising a superlattice layer between the n-type semiconductor layer and the active layer. 11 . The nanorod light emitting device according to claim 1 , further comprising a current blocking layer between the active layer and the p-type semiconductor layer. 12 . The nanorod light emitting device of claim 1 , wherein each of the plurality of nanoholes has a first length in a diameter direction of the n-type semiconductor layer and a second length in a direction perpendicular to the diameter direction, the first length being greater than the second length.

13. A display device, comprising: a plurality of pixel electrodes; a common electrode corresponding to the plurality of pixel electrodes; a plurality of nanorod light emitting devices connected between each of the plurality of pixel electrodes and the common electrode; as well as a driving circuit layer configured to drive the plurality of nanorod light emitting devices, Each of the plurality of nanorod light emitting devices comprises: n-type semiconductor layer; an active layer on the n-type semiconductor layer; and a p-type semiconductor layer on the active layer, and The n-type semiconductor layer comprises: Mandrel; a plurality of nanopores opening outwardly from the mandrel; and A plurality of quantum dots are disposed in the plurality of nanopores.

14. The display device according to claim 13, wherein: In a horizontal cross section of the n-type semiconductor layer, the plurality of nanoholes are radially arranged from the core rod.

15. The display device according to claim 13, wherein: In a vertical cross section of the n-type semiconductor layer, the plurality of nanoholes are arranged in a vertical direction. 16 . The display device of claim 13 , wherein the active layer comprises at least one of indium gallium nitride (InGaN) and indium aluminum gallium nitride (InAlGaN).

17. A method for manufacturing a nanorod light-emitting device, the method comprising: forming an n-type semiconductor layer on a substrate; forming an active layer on the n-type semiconductor layer; forming a p-type semiconductor layer on the active layer; forming a plurality of nanorod light emitting structures by patterning the n-type semiconductor layer, the active layer and the p-type semiconductor layer in the form of a plurality of nanorods; forming a core rod and a plurality of nanoholes opened in an outward direction from the core rod in the n-type semiconductor layer of the plurality of nanorod light emitting structures by an electrochemical etching process; as well as Quantum dots are encapsulated in the plurality of nanopores.

18. The method according to claim 17, wherein: In a horizontal cross section of the n-type semiconductor layer, the plurality of nanoholes are radially arranged from the core rod.

19. The method according to claim 17, wherein: In a vertical cross section of the n-type semiconductor layer, the plurality of nanoholes are arranged in a vertical direction.

Images