Method and device for determining initial value of threshold voltage, computer equipment and medium

Abstract

The invention relates to a threshold voltage initial value determination method and device, computer equipment and a medium. The method comprises the following steps: acquiring a plurality of initial transfer characteristics when an initial bidirectional voltage waveform is applied to a target transistor, and under the condition that hysteresis of each initial transfer characteristic is in an unstable state, adjusting a termination input voltage of the target transistor to obtain an adjusted termination input voltage, determining an adjusted bidirectional voltage waveform of the target transistor according to the adjusted termination input voltage and the initial input voltage, obtaining a plurality of adjusted transfer characteristics when the adjusted bidirectional voltage waveform is applied to the target transistor, and adjusting the target transistor when the hysteresis of each adjusted transfer characteristic is in a stable state. And determining the threshold voltage initial value of the target transistor according to each adjusted transfer characteristic. By adopting the method, the initial value of the threshold voltage of the target transistor with relatively high precision can be determined through the transfer characteristic of the stable state so as to support the research on the negative bias temperature instability of the target transistor.

Description

Technical Field

[0001] The present application relates to the field of electronic technology, and in particular to a method, device, computer equipment and medium for determining an initial value of a threshold voltage. Background Art

[0002] With the development of chip technology, the requirements for integrated circuit performance and power consumption are getting higher and higher, which is mainly achieved through transistors with higher reliability. Therefore, it is particularly important to study the reliability of transistors in integrated circuits.

[0003] Taking the negative bias temperature instability of a transistor as an example, in the process of studying the negative bias temperature instability of the transistor, it is necessary to first determine the initial value of the threshold voltage of the transistor.

[0004] However, in the process of determining the initial value of the threshold voltage of the transistor in the related art, there is a problem that the accuracy of the determined initial value of the threshold voltage is low. Summary of the invention

[0005] Based on this, it is necessary to provide a method, device, computer equipment and medium for determining the initial value of the threshold voltage in response to the above technical problems, which can improve the accuracy of the determined initial value of the threshold voltage in the process of determining the initial value of the threshold voltage of the transistor.

[0006] In a first aspect, an embodiment of the present application provides a method for determining an initial value of a threshold voltage, the method comprising:

[0007] Acquiring a plurality of preliminary transfer characteristics of the target transistor when an initial bidirectional voltage waveform is applied thereto; the initial bidirectional voltage waveform being determined according to a starting input voltage and a terminating input voltage of the target transistor;

[0008] When the hysteresis of each preliminary transfer characteristic is in an unstable state, the termination input voltage is adjusted to obtain an adjusted termination input voltage, and an adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted termination input voltage and the starting input voltage;

[0009] A plurality of adjusted transfer characteristics are obtained when the target transistor is applied with an adjusted bidirectional voltage waveform, and when the hysteresis of each adjusted transfer characteristic is in a stable state, an initial threshold voltage value of the target transistor is determined according to each adjusted transfer characteristic.

[0010] In one embodiment, obtaining a plurality of preliminary transfer characteristics of a target transistor when an initial bidirectional voltage waveform is applied thereto includes:

[0011] During the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, measuring the output current and input voltage of the target transistor;

[0012] Each preliminary transfer characteristic is constructed based on the measurement results obtained during each application of the initial bidirectional voltage waveform.

[0013] In one embodiment, the preliminary transfer characteristic includes a first curve and a second curve; and the method further includes:

[0014] When the differences between different first curves in each preliminary transfer characteristic are within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are the same, determining that the hysteresis of each preliminary transfer characteristic is in a stable state;

[0015] Otherwise, it is determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0016] In one embodiment, adjusting the termination input voltage to obtain an adjusted termination input voltage includes:

[0017] The termination input voltage and the voltage adjustment amount are summed to obtain the adjusted termination input voltage.

[0018] In one embodiment, the adjusted transfer characteristic includes a third curve and a fourth curve; and the method further includes:

[0019] When the differences between different third curves in each adjusted transfer characteristic are within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within the difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same, determining that the hysteresis of each adjusted transfer characteristic is in a stable state;

[0020] Otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0021] In one embodiment, the method further comprises:

[0022] In the case of the hysteresis unstable state of each adjusted transfer characteristic, detecting whether the threshold voltage obtained when the target transistor is respectively applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform has the same change trend with the measurement sequence number;

[0023] According to the detection result and the voltage adjustment amount, the adjusted termination input voltage is updated to obtain the current termination input voltage;

[0024] Based on the current termination input voltage and the initial input voltage, a plurality of transfer characteristics of the target transistor are reacquired until the hysteresis of each transfer characteristic is in a stable state.

[0025] In one embodiment, according to the detection result and the voltage adjustment amount, the adjusted termination input voltage is updated to obtain the current termination input voltage, including:

[0026] If the detection result is different, the voltage adjustment amount is updated to obtain the latest voltage adjustment amount, and the latest voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage; the latest voltage adjustment amount is less than the voltage adjustment amount;

[0027] If the detection result is the same, the voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage.

[0028] In a second aspect, an embodiment of the present application further provides a device for determining an initial value of a threshold voltage, the device comprising:

[0029] An acquisition module, used to acquire a plurality of preliminary transfer characteristics when an initial bidirectional voltage waveform is applied to the target transistor; the initial bidirectional voltage waveform is determined according to a starting input voltage and an ending input voltage of the target transistor;

[0030] An adjustment module, used for adjusting the termination input voltage to obtain an adjusted termination input voltage when the hysteresis of each preliminary transfer characteristic is in an unstable state, and determining an adjusted bidirectional voltage waveform of the target transistor according to the adjusted termination input voltage and the starting input voltage;

[0031] The determination module is used to obtain multiple adjusted transfer characteristics when the target transistor is applied with an adjusted bidirectional voltage waveform, and determine the initial value of the threshold voltage of the target transistor according to each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state.

[0032] In a third aspect, an embodiment of the present application further provides a computer device, comprising a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the method of any one of the embodiments of the first aspect when executing the computer program.

[0033] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the method of any embodiment in the above-mentioned first aspect are implemented.

[0034] In a fifth aspect, an embodiment of the present application further provides a computer program product, the computer program product comprising a computer program, which, when executed by a processor, implements the steps of the method of any embodiment of the first aspect above.

[0035] Embodiments of the present application provide a method, apparatus, computer equipment and medium for determining an initial value of a threshold voltage, including: obtaining a plurality of preliminary transfer characteristics when an initial bidirectional voltage waveform is applied to a target transistor, the initial bidirectional voltage waveform being determined based on a starting input voltage and a terminating input voltage of the target transistor, and when the hysteresis of each preliminary transfer characteristic is in an unstable state, adjusting the terminating input voltage to obtain an adjusted terminating input voltage, and determining an adjusted bidirectional voltage waveform of the target transistor based on the adjusted terminating input voltage and the starting input voltage, obtaining a plurality of adjusted transfer characteristics when an adjusted bidirectional voltage waveform is applied to the target transistor, and determining the initial value of the threshold voltage of the target transistor based on each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state. The above method can be used to change the bidirectional voltage waveform applied to the target transistor by adjusting the termination input voltage of the target transistor, so that when the hysteresis of the transfer characteristic of the target transistor is in a stable state, a higher-precision initial value of the threshold voltage of the target transistor is obtained based on the transfer characteristic of the stable state to support the study of the negative bias temperature instability of the target transistor; at the same time, the above method does not require the participation of complex algorithms, thereby reducing the complexity of determining the initial value of the threshold voltage of the target transistor, speeding up the speed of determining the initial value of the threshold voltage of the target transistor, and improving the efficiency of determining the initial value of the threshold voltage of the target transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 A diagram showing an application environment of a method for determining an initial value of a threshold voltage in one embodiment;

[0037] Figure 2 A schematic diagram of a flow chart of a method for determining an initial value of a threshold voltage in one embodiment;

[0038] Figure 3 A bidirectional voltage waveform diagram in one embodiment;

[0039] Figure 4 is a flow chart of a method for determining an initial value of a threshold voltage in another embodiment;

[0040] Figure 5 is a flow chart of a method for determining an initial value of a threshold voltage in another embodiment;

[0041] Figure 6 is a flow chart of a method for determining an initial value of a threshold voltage in another embodiment;

[0042] Figure 7 A plurality of preliminary transfer characteristic curves in one embodiment;

[0043] Figure 8 for Figure 7The threshold voltage corresponding to the embodiment changes with the measurement sequence number;

[0044] Fig. 9 A plurality of transfer characteristic curves after adjustment in one embodiment;

[0045] Fig.10 for Fig. 9 The threshold voltage corresponding to the embodiment changes with the measurement sequence number;

[0046] Fig.11 A plurality of transfer characteristic curves in one embodiment;

[0047] Fig.12 for Fig.11 The corresponding threshold voltage in the embodiment changes with the measurement sequence number;

[0048] Fig.13 is a structural block diagram of a device for determining an initial value of a threshold voltage in one embodiment;

[0049] Fig.14 FIG. 4 is a diagram showing the internal structure of a computer device in one embodiment. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solution and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0051] In the field of chips, the requirements for the performance and power consumption of integrated circuits are getting higher and higher. Usually, at least one transistor with higher reliability is set in the integrated circuit to meet the requirements of the performance and power consumption of the integrated circuit. Therefore, it is particularly important to study the reliability of transistors in integrated circuits. Taking the reliability of the transistor as the negative bias temperature instability as an example, in the process of studying the negative bias temperature instability of the transistor, it is necessary to first determine the initial value of the threshold voltage of the transistor. However, in the process of determining the initial value of the threshold voltage of the transistor in the related art, there is a problem that the correctness of the determined initial value of the threshold voltage is low. Based on this, an embodiment of the present application provides a method for determining the initial value of the threshold voltage, which can improve the correctness of the determined initial value of the threshold voltage in the process of determining the initial value of the threshold voltage of the transistor.

[0052] The method for determining the initial value of the threshold voltage provided in the embodiment of the present application can be applied to Figure 1 The threshold voltage initial value determination system shown. The threshold voltage initial value determination system may include a computer device and a chip to be tested, wherein the chip to be tested is provided with at least one transistor; Figure 1Take n chips to be tested as an example (the transistors on each chip to be tested are not shown). Optionally, the above-mentioned computer device can be a device with data processing function such as a personal computer, a desktop computer, a laptop computer, a smart phone, a smart bracelet, an iPad, etc.; the above-mentioned chip to be tested can be a processor chip, a memory chip, a memory control chip, an encryption chip, an audio processing chip, a power management chip, etc., which is not limited to this embodiment of the present application. Optionally, the above-mentioned transistor can be a depletion-type metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), and the MOSFET can be an N-type MOSFET or a P-type MOSFET; in the embodiment of the present application, the MOSFET is a carbon nanotube MOSFET. For example, the computer device and the chip to be tested can be connected for communication, and the connection method can be WiFi, mobile network or Bluetooth connection. The following embodiment uses a computer device as the execution subject of the threshold voltage initial value determination method to introduce the specific process of the threshold voltage initial value determination method.

[0053] like Figure 2 FIG. 1 is a flow chart of a method for determining an initial value of a threshold voltage provided in an embodiment of the present application. The method can be implemented by the following steps:

[0054] S101, obtaining a plurality of preliminary transfer characteristics when an initial bidirectional voltage waveform is applied to a target transistor, wherein the initial bidirectional voltage waveform is determined according to a starting input voltage and an ending input voltage of the target transistor.

[0055] In the embodiment of the present application, the target transistor can be any transistor in the chip to be tested, and the target transistor lacks a good interface between the silicon substrate and the silicon dioxide insulating layer, and has many interface defects. In practical applications, for transistors with many defects, a hysteresis method can be used to measure the transfer characteristics of such transistors, wherein the voltage waveform applied to the transistor by the hysteresis method is a bidirectional voltage waveform, such as Figure 3 Shown is a bidirectional voltage waveform.

[0056] It should be noted here that, in the process of measuring the transfer characteristics of the transistor, the gate voltage Vg of the transistor does not stop after sweeping from the starting input voltage Vgstart to the ending input voltage Vgstop, but continues to sweep from the ending input voltage to the starting input voltage, completing the application of a bidirectional voltage waveform. In the embodiment of the present application, the starting input voltage Vgstart of the target transistor can be the rated operating voltage of the target transistor.

[0057] Specifically, in the process of applying an initial bidirectional voltage waveform to the target transistor, the computer device can obtain multiple preliminary transfer characteristics of the target transistor when the initial bidirectional voltage waveform is applied. The above-mentioned initial bidirectional voltage waveform is determined according to the starting input voltage and the ending input voltage of the target transistor. In an embodiment of the present application, the starting input voltage of the target transistor can be the operating voltage of the target transistor; the ending input voltage of the target transistor can be the voltage of any point in the cutoff region and the subthreshold region in the complete transfer characteristic of the target transistor, but in an embodiment of the present application, the ending input voltage of the target transistor can be the voltage of any point in the saturation region in the complete transfer characteristic of the target transistor.

[0058] Among them, the method of applying the initial bidirectional voltage waveform to the target transistor can be that the computer device sends a starting input voltage and an ending input voltage to the power supply device, instructing the power supply device to determine the initial bidirectional voltage waveform based on the starting input voltage and the ending input voltage, and apply the initial bidirectional voltage waveform to the target transistor.

[0059] S102. When the hysteresis of each preliminary transfer characteristic is in an unstable state, the termination input voltage is adjusted to obtain an adjusted termination input voltage, and an adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted termination input voltage and the starting input voltage.

[0060] In practical applications, a computer device can pre-train an algorithm model and input each preliminary transfer characteristic into the algorithm model in sequence. The algorithm model judges the stability of the hysteresis of each preliminary transfer characteristic and outputs the stable state of the hysteresis of each preliminary transfer characteristic. When it is determined that the hysteresis of each preliminary transfer characteristic is in an unstable state, the termination input voltage is adjusted to obtain the adjusted termination input voltage, and the adjusted bidirectional voltage waveform of the target transistor is determined based on the adjusted termination input voltage and the starting input voltage.

[0061] The method of adjusting the termination input voltage to obtain the adjusted termination input voltage may be to perform an arithmetic operation on the termination input voltage to obtain the adjusted termination input voltage. Optionally, the arithmetic operation may be implemented by at least one of addition, subtraction, multiplication, and division.

[0062] Optionally, the voltage adjustment amount may be a negative value, and the absolute value of the voltage adjustment amount may be less than the rated operating voltage of the target transistor, but in an embodiment of the present application, the voltage adjustment amount is equal to the negative rated operating voltage, that is, the absolute value of the voltage adjustment amount is equal to the rated operating voltage of the target transistor.

[0063] In one embodiment, the step of adjusting the termination input voltage to obtain an adjusted termination input voltage in the above S102 may include: summing the termination input voltage and the voltage adjustment amount to obtain the adjusted termination input voltage.

[0064] S103, obtaining a plurality of adjusted transfer characteristics when the target transistor is applied with an adjusted bidirectional voltage waveform, and determining an initial threshold voltage value of the target transistor according to each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state.

[0065] Specifically, in the process of reapplying the adjusted bidirectional voltage waveform to the target transistor, the computer device can obtain a plurality of adjusted transfer characteristics of the target transistor when the adjusted bidirectional voltage waveform is applied. The adjusted bidirectional voltage waveform is similar to Figure 3 The waveform shown.

[0066] The method of applying the adjusted bidirectional voltage waveform to the target transistor may be that the computer device sends the adjusted bidirectional voltage waveform to the power supply device, instructing the power supply device to apply the adjusted bidirectional voltage waveform to the target transistor.

[0067] Furthermore, the computer device can input each adjusted transfer characteristic into the algorithm model in turn, and the algorithm model judges the stability of the hysteresis of each adjusted transfer characteristic and outputs the stable state of the hysteresis of each adjusted transfer characteristic. When it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state, the initial value of the threshold voltage of the target transistor is determined according to each adjusted transfer characteristic.

[0068] In practical applications, the computer device can process each adjusted transfer characteristic to obtain the initial threshold voltage value of the target transistor by using curve extrapolation, linear extrapolation, derivation, quadratic function fitting, etc. In an embodiment of the present application, the computer device can process each adjusted transfer characteristic by using a constant current method to obtain the initial threshold voltage value of the target transistor.

[0069] The technical solution in the embodiment of the present application obtains multiple preliminary transfer characteristics when the target transistor is applied with an initial bidirectional voltage waveform, the initial bidirectional voltage waveform is determined according to the starting input voltage and the terminating input voltage of the target transistor, and when the hysteresis of each preliminary transfer characteristic is in an unstable state, the terminating input voltage is adjusted to obtain an adjusted terminating input voltage, and the adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted terminating input voltage and the starting input voltage, and multiple adjusted transfer characteristics are obtained when the target transistor is applied with the adjusted bidirectional voltage waveform, and when the hysteresis of each adjusted transfer characteristic is in a stable state, the initial value of the threshold voltage of the target transistor is determined according to each adjusted transfer characteristic; the above method can change the bidirectional voltage waveform applied to the target transistor by adjusting the terminating input voltage of the target transistor, so that when the hysteresis of the transfer characteristic of the target transistor is in a stable state, the initial value of the threshold voltage of the target transistor with higher accuracy is obtained based on the transfer characteristic of the stable state, so as to support the study of the negative bias temperature instability of the target transistor; at the same time, the above method does not require the participation of complex algorithms, thereby reducing the complexity of determining the initial value of the threshold voltage of the target transistor, accelerating the speed of determining the initial value of the threshold voltage of the target transistor, and improving the efficiency of determining the initial value of the threshold voltage of the target transistor.

[0070] The following is a description of the process of obtaining a plurality of preliminary transfer characteristics of the target transistor when the initial bidirectional voltage waveform is applied. Figure 4 As shown, the step of obtaining a plurality of preliminary transfer characteristics of the target transistor when the initial bidirectional voltage waveform is applied in the above S101 can be implemented in the following manner:

[0071] S111 . In the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, measuring the output current and input voltage of the target transistor.

[0072] Specifically, in the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, the computer device can send a measurement instruction to the measuring device, instructing the measuring device to start synchronously measuring the output current Id (A) and input voltage Vg (V) of the target transistor. In addition, the computer device can also output a measurement instruction to instruct the user to synchronously measure the output current and input voltage of the target transistor through the measuring device. Among them, at the same time, the output current of the target transistor and the input voltage of the target transistor are one-to-one corresponding.

[0073] It should be noted that applying an initial bidirectional voltage waveform to a target transistor once can complete a measurement and obtain a set of corresponding relationship data between the output current and the input voltage of the target transistor. In the embodiment of the present application, multiple sets of corresponding relationship data obtained by applying the initial bidirectional voltage waveform multiple times are used as measurement results.

[0074] S121 . Constructing preliminary transfer characteristics respectively according to the measurement results obtained in each process of applying the initial bidirectional voltage waveform.

[0075] In practical applications, a transfer characteristic curve, ie, a preliminary transfer characteristic, can be generated according to a set of corresponding relationship data in the measurement results.

[0076] The technical solution in the embodiment of the present application measures the output current and input voltage of the target transistor during the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, and constructs each preliminary transfer characteristic according to the measurement results obtained during each application of the initial bidirectional voltage waveform. The above method can construct the transfer characteristics of the target transistor only by measuring the output current and input voltage of the target transistor. The process is relatively simple and does not require complex algorithms, thereby speeding up the acquisition of the transfer characteristics of the target transistor.

[0077] In one embodiment, the preliminary transfer characteristic includes a first curve and a second curve; before executing the step in S200 above, Figure 5 As shown, the above method may further include the following steps:

[0078] S104. When the differences between different first curves in each preliminary transfer characteristic are all within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are all within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are the same, determine that the hysteresis of each preliminary transfer characteristic is in a stable state.

[0079] It should be noted here that the preliminary transfer characteristics include a first curve and a second curve, wherein, since the initial bidirectional voltage waveform is symmetrical based on the termination input voltage, correspondingly, the starting point of the first curve is the same as the starting point of the second curve, and the end point of the first curve is the same as the end point of the second curve.

[0080] Among them, the difference between the two first curves in each preliminary transfer characteristic is within the preset difference range, which means that the difference between the two first curves in each preliminary transfer characteristic is almost 0, or the first curves in each preliminary transfer characteristic are basically the same; the difference between the two second curves in each preliminary transfer characteristic is within the preset difference range, which means that the difference between the two second curves in each preliminary transfer characteristic is almost 0, or the second curves in each preliminary transfer characteristic are basically the same. At the same time, for any preliminary transfer characteristic, the difference between the first curve and the second curve in the preliminary transfer characteristic is the same.

[0081] Specifically, when the differences between different first curves in each preliminary transfer characteristic are within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are the same, it can be determined that the hysteresis of each preliminary transfer characteristic is in a stable state.

[0082] S105. Otherwise, determine that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0083] Among them, when any of the following three conditions is not satisfied: the differences between different first curves in each preliminary transfer characteristic are within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are the same, it can be determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0084] The technical solution in the embodiment of the present application determines that the hysteresis of each preliminary transfer characteristic is in a stable state when the differences between different first curves in each preliminary transfer characteristic are within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are the same; otherwise, it determines that the hysteresis of each preliminary transfer characteristic is in an unstable state; the above method does not require the participation of complex algorithms, thereby reducing the complexity of determining the hysteresis stability of the preliminary transfer characteristics, speeding up the determination of the hysteresis stability, and improving the efficiency of determining the hysteresis stability; at the same time, the above method does not require human participation, thereby reducing participation errors and improving the accuracy of the hysteresis stability of the determined preliminary transfer characteristics.

[0085] In one embodiment, the adjusted transfer characteristics include a third curve and a fourth curve; before performing the step of determining the initial value of the threshold voltage of the target transistor according to each adjusted transfer characteristic in S103, the method may further include the following steps:

[0086] When the differences between different third curves in each adjusted transfer characteristic are within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within the difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same, it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state; otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0087] In practical applications, the starting point of the third curve is the same as the starting point of the fourth curve, and the end point of the third curve is the same as the end point of the fourth curve.

[0088] Among them, the difference between the third curves in each adjusted transfer characteristic is within the preset difference range, which means that the difference between the third curves in each adjusted transfer characteristic is almost 0, or the third curves in each adjusted transfer characteristic are basically the same; the difference between the fourth curves in each adjusted transfer characteristic is within the preset difference range, which means that the difference between the fourth curves in each adjusted transfer characteristic is almost 0, or the fourth curves in each adjusted transfer characteristic are basically the same. At the same time, for any adjusted transfer characteristic, the difference between the third curve and the fourth curve in the adjusted transfer characteristic is the same.

[0089] Specifically, when the differences between different third curves in each adjusted transfer characteristic are within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within the difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same, it can be determined that the hysteresis of each adjusted transfer characteristic is in a stable state.

[0090] At the same time, when any of the following three conditions is not satisfied: the differences between different third curves in each adjusted transfer characteristic are within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within a difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same, it can be determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0091] The technical solution in the embodiment of the present application determines that the hysteresis of each adjusted transfer characteristic is in a stable state when the differences between different third curves in each adjusted transfer characteristic are within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within the difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same; otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state; the above method does not require the participation of complex algorithms, thereby reducing the complexity of determining the hysteresis stability of the adjusted transfer characteristics, speeding up the determination of the hysteresis stability, and improving the efficiency of determining the hysteresis stability; at the same time, the above method does not require human participation, thereby reducing participation errors and improving the accuracy of the determined hysteresis stability of the adjusted transfer characteristics.

[0092] In some scenarios, after measuring the transfer characteristics of the target transistor twice, the hysteresis of the transfer characteristics is still in an unstable state. At this time, it is necessary to continue to make at least one adjustment to the bidirectional voltage waveform applied to the target transistor to re-measure the latest transfer characteristics of the target transistor until the hysteresis of the latest transfer characteristics is in a stable state. The following describes the process of obtaining the latest transfer characteristics in a stable state when the hysteresis of each adjusted transfer characteristic is in an unstable state. In one embodiment, after executing the step of obtaining multiple adjusted transfer characteristics of the target transistor when the adjusted bidirectional voltage waveform is applied in S103, as shown in FIG. Figure 6 As shown, the above method may also include:

[0093] S106 . In the case of a hysteresis unstable state of each adjusted transfer characteristic, detect whether the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively has the same variation trend with the measurement sequence number.

[0094] It should be noted here that in the process of applying the initial bidirectional voltage waveform to the target transistor, the transfer characteristics of the target transistor can be measured multiple times to obtain multiple preliminary transfer characteristics; each preliminary transfer characteristic corresponds to a measurement number. At the same time, a preliminary transfer characteristic can also represent a set of corresponding relationship data between the output current and the input voltage of the target transistor through the corresponding transfer characteristic curve. Correspondingly, a threshold voltage can be obtained according to a preliminary transfer characteristic, and finally multiple preliminary transfer characteristics can obtain multiple threshold voltages. Further, a threshold voltage variation curve with the measurement number is constructed according to these multiple threshold voltages and the corresponding measurement numbers. Among them, the threshold voltage variation trend with the measurement number refers to the threshold voltage variation curve with the measurement number being an upward trend or a downward trend.

[0095] In practical applications, the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform may have an upward or downward trend as the measurement number changes; the threshold voltage obtained when the target transistor is applied with the adjusted bidirectional voltage waveform may have an upward or downward trend as the measurement number changes. Optionally, the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform may have the same or different trend as the threshold voltage obtained when the target transistor is applied with the adjusted bidirectional voltage waveform.

[0096] S107 . According to the detection result and the voltage adjustment amount, the adjusted termination input voltage is updated to obtain the current termination input voltage.

[0097] Specifically, the computer device can pre-train an input voltage update model, and then input the detection result and the voltage adjustment amount into the input voltage update model, which updates the adjusted termination input voltage according to the detection result and the voltage adjustment amount and outputs the current termination input voltage.

[0098] Optionally, the above-mentioned input voltage update model can be implemented by at least one of a convolutional neural network model, a fully connected neural network model, a long short-term memory neural network model, a recurrent neural network model and a residual neural network model.

[0099] In one embodiment, the step of updating the adjusted termination input voltage to obtain the current termination input voltage according to the detection result and the voltage adjustment amount in S107 can be implemented in the following manner:

[0100] If the detection result is different, the voltage adjustment amount is updated to obtain the latest voltage adjustment amount, and the latest voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage; if the detection result is the same, the voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage. Among them, the latest voltage adjustment amount is less than the voltage adjustment amount.

[0101] Specifically, when the detection result is that the threshold voltage obtained when the target transistor is respectively applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform has different changing trends with the measurement sequence number, the voltage adjustment amount can be updated to obtain the latest voltage adjustment amount, and the latest voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage.

[0102] In practical applications, the voltage adjustment amount can be updated by multiplying the voltage adjustment amount by a preset threshold to obtain the latest voltage adjustment amount. The preset threshold can be -0.1, -0.2, -0.3, etc. In the embodiment of the present application, the preset threshold is equal to -0.5 as an example for explanation.

[0103] In addition, when the detection result is that the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively has the same trend of changing with the measurement sequence, the voltage adjustment amount and the initial input voltage can be directly summed to obtain the current termination input voltage.

[0104] S108 , reacquiring a plurality of latest transfer characteristics of the target transistor based on the current termination input voltage and the initial input voltage, until the hysteresis of each latest transfer characteristic is in a stable state.

[0105] Furthermore, the latest bidirectional voltage waveform can be determined based on the current termination input voltage and the initial input voltage, and then multiple latest transfer characteristics of the target transistor can be reacquired in the process of applying the latest bidirectional voltage waveform to the target transistor until the hysteresis of each latest transfer characteristic is in a stable state.

[0106] For example, taking the target transistor as a P-type carbon nanotube transistor manufactured by a 90-nanometer process, and setting the starting input voltage Vgstart of the target transistor to 1.8V and the ending input voltage Vgstop to 0V, after applying the initial bidirectional voltage waveform determined by the starting input voltage Vgstart and the ending input voltage Vgstop of the target transistor to the target transistor multiple times, the obtained multiple preliminary transfer characteristics can be obtained by Figure 7 indicates that, and Figure 8 for Figure 7 The corresponding threshold voltage Vth (V) changes with the measurement sequence number. Figure 7 It can be seen that the hysteresis of multiple preliminary transfer characteristics is in an unstable state. The termination input voltage Vgstop can be further adjusted to the adjusted termination input voltage -1.8V, and the adjusted bidirectional voltage waveform determined according to the starting input voltage Vgstart and the adjusted termination input voltage of the target transistor is applied to the target transistor multiple times. The multiple adjusted transfer characteristics obtained can be obtained by Fig. 9 indicates that, and Fig.10 for Fig. 9 The corresponding threshold voltage changes with the measurement sequence number. Fig.10It can be seen that the hysteresis of multiple adjusted transfer characteristics is in an unstable state, and the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively has an inconsistent change trend with the measurement sequence number. The voltage adjustment amount -1.8V can be further updated to the latest voltage adjustment amount -0.5*-1.8V (i.e. 0.9V), and the adjusted termination input voltage and the latest voltage adjustment amount are summed to obtain the current termination input voltage -0.9V. After applying the latest bidirectional voltage waveform determined according to the starting input voltage Vgstart of the target transistor and the current termination input voltage to the target transistor multiple times, the multiple transfer characteristics obtained in this case can be obtained through Fig.11 indicates that, and Fig.12 for Fig.11 The corresponding threshold voltage changes with the measurement sequence number. Fig.12 It can be seen that the hysteresis of the multiple transfer characteristics in this case is in a stable state, and at this point, the measurement is terminated.

[0107] The technical solution in the embodiment of the present application, in the case of an unstable hysteresis state of each adjusted transfer characteristic, detects whether the threshold voltage obtained when the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform are applied to the target transistor respectively has the same trend of change with the measurement number, and updates the adjusted termination input voltage according to the detection result and the voltage adjustment amount to obtain the current termination input voltage, and re-acquires multiple latest transfer characteristics of the target transistor based on the current termination input voltage and the initial input voltage until the hysteresis of each latest transfer characteristic is in a stable state; the above method can select the termination input voltage of the updated target transistor according to the consistency of the threshold voltage change trend with the measurement number obtained from two adjacent measurements before the current moment, so as to effectively help speed up the speed at which the hysteresis of the latest transfer characteristic is in a stable state, and the processing process is relatively simple, thereby being able to speed up the processing speed; at the same time, the above method can flexibly select a reasonable way to update the adjusted termination input voltage according to different detection results, so as to improve the accurate basic processing for the subsequent hysteresis of the latest transfer characteristic to be in a stable state.

[0108] In one embodiment, the present application also provides a method for determining an initial value of a threshold voltage, which is applied to a computer device. The method includes the following process:

[0109] (1) measuring the output current and input voltage of the target transistor during the process of applying the initial bidirectional voltage waveform to the target transistor multiple times;

[0110] constructing each preliminary transfer characteristic according to the measurement results obtained during each application of the initial bidirectional voltage waveform; the initial bidirectional voltage waveform is determined according to the starting input voltage and the ending input voltage of the target transistor; the preliminary transfer characteristic includes a first curve and a second curve;

[0111] When the differences between different first curves in each preliminary transfer characteristic are all within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are all within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are the same, it is determined that the hysteresis of each preliminary transfer characteristic is in a stable state; otherwise, it is determined that the hysteresis of each preliminary transfer characteristic is in an unstable state;

[0112] When the hysteresis of each preliminary transfer characteristic is in an unstable state, the termination input voltage and the voltage adjustment amount are summed to obtain an adjusted termination input voltage, and an adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted termination input voltage and the starting input voltage;

[0113] Acquire a plurality of adjusted transfer characteristics when the target transistor is applied with an adjusted bidirectional voltage waveform; the adjusted transfer characteristics include a third curve and a fourth curve;

[0114] When the differences between different third curves in each adjusted transfer characteristic are within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within the difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same, it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state; otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state;

[0115] When the hysteresis of each adjusted transfer characteristic is in a stable state, the initial value of the threshold voltage of the target transistor is determined according to each adjusted transfer characteristic.

[0116] The execution process of the above (1) to (5) can be specifically referred to the description of the above embodiment. The implementation principle and technical effect are similar and will not be repeated here.

[0117] It should be understood that, although the steps in the flowcharts involved in the above embodiments are displayed in sequence according to the indication of the arrows, these steps are not necessarily executed in sequence according to the order indicated by the arrows. Unless there is a clear explanation in this article, the execution of these steps is not strictly limited in order, and these steps can be executed in other orders. Moreover, at least a part of the steps in the flowcharts involved in the above embodiments may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times, and the execution order of these steps or stages is not necessarily carried out in sequence, but can be executed in turn or alternately with other steps or at least a part of the steps or stages in other steps.

[0118] Based on the same inventive concept, the embodiment of the present application also provides a threshold voltage initial value determination device for implementing the threshold voltage initial value determination method involved above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme recorded in the above method, so the specific limitations in one or more threshold voltage initial value determination device embodiments provided below can refer to the limitations of the threshold voltage initial value determination method above, and will not be repeated here.

[0119] In one embodiment, Fig.13 Schematic diagram of the structure of a device for determining an initial value of a threshold voltage in one embodiment of the present application. The device for determining an initial value of a threshold voltage provided in the embodiment of the present application can be applied to a computer device. Fig.13 As shown, the threshold voltage initial value determination device of the embodiment of the present application may include: an acquisition module 11, an adjustment module 12 and a determination module 13, wherein:

[0120] An acquisition module 11 is used to acquire a plurality of preliminary transfer characteristics when an initial bidirectional voltage waveform is applied to the target transistor; the initial bidirectional voltage waveform is determined according to a starting input voltage and an ending input voltage of the target transistor;

[0121] The adjustment module 12 is used to adjust the termination input voltage to obtain an adjusted termination input voltage when the hysteresis of each preliminary transfer characteristic is in an unstable state, and determine an adjusted bidirectional voltage waveform of the target transistor according to the adjusted termination input voltage and the starting input voltage;

[0122] The determination module 13 is used to obtain multiple adjusted transfer characteristics when the target transistor is applied with an adjusted bidirectional voltage waveform, and determine the initial value of the threshold voltage of the target transistor according to each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state.

[0123] The threshold voltage initial value determination device provided in the embodiment of the present application can be used to execute the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application. Its implementation principle and technical effect are similar and will not be repeated here.

[0124] In one embodiment, the acquisition module 11 includes: a measurement unit and a construction unit, wherein:

[0125] A measuring unit, used for measuring an output current and an input voltage of the target transistor during a process of applying an initial bidirectional voltage waveform to the target transistor multiple times;

[0126] The construction unit is used to respectively construct each preliminary transfer characteristic according to the measurement results obtained in the process of applying the initial bidirectional voltage waveform each time.

[0127] The threshold voltage initial value determination device provided in the embodiment of the present application can be used to execute the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application. Its implementation principle and technical effect are similar and will not be repeated here.

[0128] In one embodiment, the preliminary transfer characteristic includes a first curve and a second curve; the threshold voltage initial value determination device further includes: a first determination module, wherein:

[0129] The first determination module is used to determine that the hysteresis of each preliminary transfer characteristic is in a stable state when the differences between different first curves in each preliminary transfer characteristic are all within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are all within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are the same; otherwise, determine that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0130] The threshold voltage initial value determination device provided in the embodiment of the present application can be used to execute the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application. Its implementation principle and technical effect are similar and will not be repeated here.

[0131] In one embodiment, the adjustment module 12 is specifically used for:

[0132] The termination input voltage and the voltage adjustment amount are summed to obtain the adjusted termination input voltage.

[0133] The threshold voltage initial value determination device provided in the embodiment of the present application can be used to execute the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application. Its implementation principle and technical effect are similar and will not be repeated here.

[0134] In one embodiment, the adjusted transfer characteristic includes a third curve and a fourth curve; the threshold voltage initial value determination device further includes: a second determination module, wherein:

[0135] The second determination module is used to determine that the hysteresis of each adjusted transfer characteristic is in a stable state when the differences between different third curves in each adjusted transfer characteristic are all within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are all within the difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same; otherwise, determine that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0136] The threshold voltage initial value determination device provided in the embodiment of the present application can be used to execute the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application. Its implementation principle and technical effect are similar and will not be repeated here.

[0137] In one embodiment, the threshold voltage initial value determination device further includes: a detection module, an update module and an execution module, wherein:

[0138] A detection module, used for detecting whether the threshold voltage obtained when the target transistor is respectively applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform has the same change trend with the measurement sequence number when the hysteresis instability state of each adjusted transfer characteristic is in each adjusted transfer characteristic;

[0139] An updating module, used for updating the adjusted termination input voltage to obtain a current termination input voltage according to the detection result and the voltage adjustment amount;

[0140] The execution module is used to re-acquire multiple transfer characteristics of the target transistor based on the current termination input voltage and the initial input voltage until the hysteresis of each transfer characteristic is in a stable state.

[0141] The threshold voltage initial value determination device provided in the embodiment of the present application can be used to execute the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application. Its implementation principle and technical effect are similar and will not be repeated here.

[0142] In one embodiment, the update module is specifically used to:

[0143] If the detection result is different, the voltage adjustment amount is updated to obtain the latest voltage adjustment amount, and the latest voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage; the latest voltage adjustment amount is less than the voltage adjustment amount;

[0144] If the detection result is the same, the voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage.

[0145] The threshold voltage initial value determination device provided in the embodiment of the present application can be used to execute the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application. Its implementation principle and technical effect are similar and will not be repeated here.

[0146] The specific definition of the threshold voltage initial value determination device can refer to the definition of the threshold voltage initial value determination method above, which will not be repeated here. Each module in the above threshold voltage initial value determination device can be implemented in whole or in part by software, hardware and a combination thereof. The above modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.

[0147] In one embodiment, a computer device is also provided. The computer device may be a server, and its internal structure diagram may be as shown in FIG. Fig.14As shown. The computer device includes a processor, a memory and a network interface connected through a system bus. Among them, the processor of the computer device is used to provide processing power. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store the transfer characteristics, the starting input voltage and the ending input voltage of the target transistor. The network interface of the computer device is used to communicate with an external end point through a network connection. When the computer program is executed by the processor, a method for determining an initial value of a threshold voltage is implemented.

[0148] Those skilled in the art will understand that Fig.14 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0149] In one embodiment, a computer device is also provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the technical solution in the above-mentioned threshold voltage initial value determination method embodiment of the present application is implemented. The implementation principle and technical effect are similar and will not be repeated here.

[0150] In one embodiment, a computer-readable storage medium is also provided, on which a computer program is stored. When the computer program is executed by a processor, the technical solution of the method for determining the initial value of the threshold voltage mentioned above in the present application is implemented. The implementation principle and technical effect are similar and will not be repeated here.

[0151] In one embodiment, a computer program product is also provided, including a computer program. When the computer program is executed by a processor, the technical solution of the method for determining the initial value of the threshold voltage described above in the present application is implemented. The implementation principle and technical effect are similar and will not be repeated here.

[0152] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0153] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0154] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A method for determining an initial value of a threshold voltage, characterized in that: The method comprises: Acquire a plurality of preliminary transfer characteristics when an initial bidirectional voltage waveform is applied to the target transistor; the initial bidirectional voltage waveform is determined according to a starting input voltage and a terminating input voltage of the target transistor; When the hysteresis of each of the preliminary transfer characteristics is in an unstable state, the termination input voltage is adjusted to obtain an adjusted termination input voltage, and an adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted termination input voltage and the starting input voltage; A plurality of adjusted transfer characteristics are obtained when the target transistor is applied with an adjusted bidirectional voltage waveform, and when the hysteresis of each of the adjusted transfer characteristics is in a stable state, an initial threshold voltage value of the target transistor is determined according to each of the adjusted transfer characteristics.

2. The method according to claim 1, characterized in that The step of obtaining a plurality of preliminary transfer characteristics of the target transistor when an initial bidirectional voltage waveform is applied thereto comprises: In the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, measuring the output current and input voltage of the target transistor; The preliminary transfer characteristics are constructed respectively according to the measurement results obtained during each application of the initial bidirectional voltage waveform.

3. The method according to claim 1 or 2, characterized in that: The preliminary transfer characteristic includes a first curve and a second curve; the method further includes: When the differences between different first curves in each of the preliminary transfer characteristics are within a preset difference range, the differences between different second curves in each of the preliminary transfer characteristics are within the difference range, and the differences between the first curve and the second curve in each of the preliminary transfer characteristics are the same, determining that the hysteresis of each of the preliminary transfer characteristics is in a stable state; Otherwise, it is determined that the hysteresis of each of the preliminary transfer characteristics is in an unstable state.

4. The method according to claim 1 or 2, characterized in that: The step of adjusting the termination input voltage to obtain an adjusted termination input voltage includes: The termination input voltage and the voltage adjustment amount are summed to obtain the adjusted termination input voltage.

5. The method according to claim 1 or 2, characterized in that: The adjusted transfer characteristic includes a third curve and a fourth curve; the method further includes: When the differences between different third curves in the adjusted transfer characteristics are all within a preset difference range, the differences between different fourth curves in the adjusted transfer characteristics are all within the difference range, and the differences between the third curve and the fourth curve in the adjusted transfer characteristics are the same, determining that the hysteresis of each adjusted transfer characteristic is in a stable state; Otherwise, it is determined that the hysteresis of each of the adjusted transfer characteristics is in an unstable state.

6. The method according to claim 1 or 2, characterized in that: The method further comprises: In the case of a hysteresis unstable state of each of the adjusted transfer characteristics, detecting whether the threshold voltages obtained when the target transistor is respectively applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform have the same change trend with the measurement sequence number; According to the detection result and the voltage adjustment amount, the adjusted termination input voltage is updated to obtain a current termination input voltage; Based on the current termination input voltage and the initial input voltage, a plurality of transfer characteristics of the target transistor are reacquired until the hysteresis of each of the transfer characteristics is in a stable state.

7. The method according to claim 6, characterized in that The step of updating the adjusted termination input voltage to obtain the current termination input voltage according to the detection result and the voltage adjustment amount includes: If the detection result is different, the voltage adjustment amount is updated to obtain a latest voltage adjustment amount, and the latest voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage; the latest voltage adjustment amount is less than the voltage adjustment amount; If the detection results are the same, the voltage adjustment amount and the initial input voltage are summed to obtain the current termination input voltage.

8. A device for determining an initial value of a threshold voltage, characterized in that: The device comprises: An acquisition module, used to acquire a plurality of preliminary transfer characteristics when an initial bidirectional voltage waveform is applied to a target transistor; the initial bidirectional voltage waveform is determined according to a starting input voltage and a terminating input voltage of the target transistor; an adjustment module, configured to adjust the termination input voltage to obtain an adjusted termination input voltage when the hysteresis of each of the preliminary transfer characteristics is in an unstable state, and determine an adjusted bidirectional voltage waveform of the target transistor according to the adjusted termination input voltage and the starting input voltage; The determination module is used to obtain multiple adjusted transfer characteristics when the target transistor is applied with an adjusted bidirectional voltage waveform, and determine the initial value of the threshold voltage of the target transistor according to each of the adjusted transfer characteristics when the hysteresis of each of the adjusted transfer characteristics is in a stable state.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the method according to any one of claims 1 to 7 are implemented.

10. A readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are implemented.

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