Threshold voltage initial value determination method and device, computer device, and medium

Abstract

The application relates to a threshold voltage initial value determination method and device, computer equipment and a medium. The method comprises the following steps: obtaining multiple preliminary transfer characteristics of a target transistor when an initial bidirectional voltage waveform is applied to the target transistor; in the case that the hysteresis of each preliminary transfer characteristic is in an unstable state, adjusting the terminal input voltage of the target transistor to obtain an adjusted terminal input voltage, and determining an adjusted bidirectional voltage waveform of the target transistor according to the adjusted terminal input voltage and a starting input voltage; obtaining multiple adjusted transfer characteristics of the target transistor when the adjusted bidirectional voltage waveform is applied to the target transistor; and in the case that the hysteresis of each adjusted transfer characteristic is in a stable state, determining the threshold voltage initial value of the target transistor according to each adjusted transfer characteristic. The threshold voltage initial value of the target transistor with high precision can be determined through the stable-state transfer characteristic, so as to support the research on the negative bias temperature instability of the target transistor.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronics, and in particular to a threshold voltage initial value determination method and device, computer equipment and a medium. BACKGROUND

[0002] With the development of chip technology, the performance and power consumption of integrated circuits are increasingly required, which is mainly realized by transistors with high reliability. Therefore, it is particularly important to study the reliability of transistors in integrated circuits.

[0003] Taking the negative bias temperature instability of a transistor as an example, in the process of studying the negative bias temperature instability of the transistor, the threshold voltage initial value of the transistor needs to be determined first.

[0004] However, in the process of determining the threshold voltage initial value of the transistor in the related art, the correctness of the determined threshold voltage initial value is low. SUMMARY

[0005] Therefore, it is necessary to provide a threshold voltage initial value determination method and device, computer equipment and a medium to improve the correctness of the determined threshold voltage initial value in the process of determining the threshold voltage initial value of the transistor.

[0006] In a first aspect, an embodiment of the present application provides a threshold voltage initial value determination method, which comprises:

[0007] Obtaining a plurality of preliminary transfer characteristics of a target transistor when the target transistor is applied with an initial bidirectional voltage waveform; the initial bidirectional voltage waveform is determined according to a starting input voltage and a terminal input voltage of the target transistor;

[0008] In the case that the hysteresis of each preliminary transfer characteristic is in an unstable state, adjusting the terminal input voltage to obtain an adjusted terminal input voltage, and determining an adjusted bidirectional voltage waveform of the target transistor according to the adjusted terminal input voltage and the starting input voltage;

[0009] Obtaining a plurality of adjusted transfer characteristics of the target transistor when the target transistor is applied with the adjusted bidirectional voltage waveform, and determining a threshold voltage initial value of the target transistor according to each adjusted transfer characteristic in the case that the hysteresis of each adjusted transfer characteristic is in a stable state.

[0010] In one of the embodiments, obtaining a plurality of preliminary transfer characteristics of a target transistor when the target transistor is applied with an initial bidirectional voltage waveform comprises:

[0011] In the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, the output current and the input voltage of the target transistor are measured;

[0012] The preliminary transfer characteristics are respectively constructed according to the measurement results obtained in the process of each time applying the initial bidirectional voltage waveform.

[0013] In one of the embodiments, the preliminary transfer characteristics include first curves and second curves; and the method further includes:

[0014] In the case that the differences between different first curves in each preliminary transfer characteristic are within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are within the difference range, and the differences between the first curves and the second curves in each preliminary transfer characteristic are the same, it is determined that the hysteresis of each preliminary transfer characteristic is in a stable state;

[0015] Otherwise, it is determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0016] In one of the embodiments, the adjustment of the termination input voltage to obtain the adjusted termination input voltage includes:

[0017] The termination input voltage and the voltage adjustment amount are summed to obtain the adjusted termination input voltage.

[0018] In one of the embodiments, the adjusted transfer characteristics include third curves and fourth curves; and the method further includes:

[0019] In the case that the differences between different third curves in each adjusted transfer characteristic are within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within the difference range, and the differences between the third curves and the fourth curves in each adjusted transfer characteristic are the same, it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state;

[0020] Otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0021] In one of the embodiments, the method further includes:

[0022] In the case that the hysteresis of each adjusted transfer characteristic is in an unstable state, it is detected whether the variation trends of the threshold voltages of the target transistor obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform are the same;

[0023] According to the detection result and the voltage adjustment amount, the adjusted termination input voltage is updated to obtain a current termination input voltage;

[0024] Based on the current termination input voltage and the initial input voltage, the multiple transfer characteristics of the target transistor are re-obtained until the hysteresis of each transfer characteristic is in a stable state.

[0025] In one of the embodiments, the current termination input voltage is updated according to the detection result and the voltage adjustment amount, comprising:

[0026] If the detection result is different, the latest voltage adjustment amount is updated according to the voltage adjustment amount, and the current termination input voltage is obtained by summing the latest voltage adjustment amount and the initial input voltage; the latest voltage adjustment amount is less than the voltage adjustment amount.

[0027] If the detection result is the same, the current termination input voltage is obtained by summing the voltage adjustment amount and the initial input voltage.

[0028] In the second aspect, the embodiments of the present application further provide a threshold voltage initial value determination device, which comprises:

[0029] The acquisition module is configured to acquire a plurality of preliminary transfer characteristics of the target transistor when the initial bidirectional voltage waveform is applied to the target transistor; the initial bidirectional voltage waveform is determined according to the start input voltage and the termination input voltage of the target transistor.

[0030] The adjustment module is configured to adjust the termination input voltage to obtain an adjusted termination input voltage when the hysteresis of each preliminary transfer characteristic is in an unstable state, and determine an adjusted bidirectional voltage waveform of the target transistor according to the adjusted termination input voltage and the start input voltage.

[0031] The determination module is configured to acquire a plurality of adjusted transfer characteristics of the target transistor when the adjusted bidirectional voltage waveform is applied to the target transistor, and determine the threshold voltage initial value of the target transistor according to each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state.

[0032] In the third aspect, the embodiments of the present application further provide a computer device, which comprises a memory and a processor, the memory stores a computer program, and the processor implements the steps of the method of any one of the embodiments of the first aspect when executing the computer program.

[0033] In the fourth aspect, the embodiments of the present application further provide a computer readable storage medium, which stores a computer program, and the processor implements the steps of the method of any one of the embodiments of the first aspect when executing the computer program.

[0034] In the fifth aspect, the embodiments of the present application further provide a computer program product, which comprises a computer program, and the processor implements the steps of the method of any one of the embodiments of the first aspect when executing the computer program.

[0035] The embodiment of the present application provides a threshold voltage initial value determination method, device, computer equipment and medium, comprising: obtaining a plurality of preliminary transfer characteristics of a target transistor when the target transistor is applied with an initial bidirectional voltage waveform, wherein the initial bidirectional voltage waveform is determined according to a starting input voltage and a terminal input voltage of the target transistor; in the case that hysteresis of each preliminary transfer characteristic is in an unstable state, adjusting the terminal input voltage to obtain an adjusted terminal input voltage, and determining an adjusted bidirectional voltage waveform of the target transistor according to the adjusted terminal input voltage and the starting input voltage; obtaining a plurality of adjusted transfer characteristics of the target transistor when the target transistor is applied with the adjusted bidirectional voltage waveform; and in the case that hysteresis of each adjusted transfer characteristic is in a stable state, determining a threshold voltage initial value of the target transistor according to each adjusted transfer characteristic. The above method can change the bidirectional voltage waveform applied to the target transistor by adjusting the terminal input voltage of the target transistor, so that in the case that hysteresis of the transfer characteristic of the target transistor is in a stable state, the threshold voltage initial value of the target transistor with high precision is obtained based on the stable state transfer characteristic, to support the study of the negative bias temperature instability of the target transistor. Meanwhile, the above method does not need to participate in complex algorithm, so as to reduce the complexity of determining the threshold voltage initial value of the target transistor, speed up the speed of determining the threshold voltage initial value of the target transistor, and improve the efficiency of determining the threshold voltage initial value of the target transistor. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 An application environment diagram of the threshold voltage initial value determination method in one embodiment;

[0037] Figure 2 A flowchart of the threshold voltage initial value determination method in one embodiment;

[0038] Figure 3 A bidirectional voltage waveform diagram in one embodiment;

[0039] Figure 4 A flowchart of the threshold voltage initial value determination method in another embodiment;

[0040] Figure 5 A flowchart of the threshold voltage initial value determination method in another embodiment;

[0041] Figure 6 A flowchart of the threshold voltage initial value determination method in another embodiment;

[0042] Figure 7 A plurality of preliminary transfer characteristic curve diagrams in one embodiment;

[0043] Figure 8 A Figure 7A trend graph of the threshold voltage corresponding to the embodiment with respect to the measurement serial number;

[0044] Figure 9 A plurality of adjusted transfer characteristic curves in an embodiment;

[0045] Figure 10 A plurality of adjusted transfer characteristic curves in an embodiment; Figure 9 A trend graph of the threshold voltage corresponding to the embodiment with respect to the measurement serial number;

[0046] Figure 11 A plurality of adjusted transfer characteristic curves in an embodiment;

[0047] Figure 12 A plurality of adjusted transfer characteristic curves in an embodiment; Figure 11 A trend graph of the threshold voltage corresponding to the embodiment with respect to the measurement serial number;

[0048] Figure 13 A structure block diagram of a threshold voltage initial value determination device in an embodiment;

[0049] Figure 14 An internal structure diagram of a computer device in an embodiment. DETAILED DESCRIPTION

[0050] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and not to limit the present application.

[0051] In the field of chips, the performance and power consumption of integrated circuits are increasingly required. Generally, at least one transistor with high reliability is provided in an integrated circuit to meet the performance and power consumption requirements of the integrated circuit. Therefore, it is particularly important to study the reliability of the transistor in the integrated circuit. Taking the negative bias temperature instability of the transistor as an example, in the process of studying the negative bias temperature instability of the transistor, the threshold voltage initial value of the transistor needs to be determined first. However, in the process of determining the threshold voltage initial value of the transistor in the related art, there is a problem that the correctness of the determined threshold voltage initial value is low. Based on this, the embodiments of the present application provide a threshold voltage initial value determination method, which can improve the correctness of the determined threshold voltage initial value in the process of determining the threshold voltage initial value of the transistor.

[0052] The threshold voltage initial value determination method provided by the embodiments of the present application can be applied to Figure 1 The threshold voltage initial value determination system is shown. The threshold voltage initial value determination system can include a computer device and a chip to be tested, and at least one transistor is provided on the chip to be tested; Figure 1Take n chips to be tested as an example (transistors on each chip to be tested are not shown). Optionally, the computer device described above can be a personal computer, a desktop computer, a notebook computer, a smart phone, a smart bracelet, an Ipad, and the like device having a data processing function; the chip to be tested described above can be a processor chip, a memory chip, a memory control chip, an encryption chip, an audio processing chip, a power management chip, and the like, and the embodiments of the present application are not limited to this. Optionally, the transistor described above can be a depletion mode metal-oxide-semiconductor field-effect transistor (MOSFET), which can be an N-type MOSFET or a P-type MOSFET; in the embodiments of the present application, a MOSFET is taken as a carbon nanotube MOSFET as an example for description. Wherein, the computer device and the chip to be tested can be in communication connection, and the connection mode can be WiFi, mobile network or Bluetooth connection and the like mode. The following embodiments take the computer device as the execution subject of the threshold voltage initial value determination method to introduce the specific process of the threshold voltage initial value determination method.

[0053] As shown in Figure 2 , a flowchart of the threshold voltage initial value determination method provided by the embodiments of the present application is shown, and the method can be implemented by the following steps:

[0054] S101, a plurality of preliminary transfer characteristics of the target transistor when an initial bidirectional voltage waveform is applied are obtained. Wherein, the initial bidirectional voltage waveform is determined according to the starting input voltage and the terminal input voltage of the target transistor.

[0055] In the embodiments of the present application, the target transistor can be any transistor in the chip to be tested, and the target transistor lacks a good interface of the silicon substrate and the silicon dioxide insulating layer, and has more interface defects. In actual application, for the transistor with more defects, the hysteresis method can be used to measure the transfer characteristics of the transistor, wherein the voltage waveform applied to the transistor by using the hysteresis method is a bidirectional voltage waveform, as shown in Figure 3 , which is a bidirectional voltage waveform diagram.

[0056] It should be noted that during the measurement of the transfer characteristics of the transistor, the gate voltage Vg of the transistor is not stopped after being scanned from the starting input voltage Vgstart to the terminal input voltage Vgstop, but continues to be scanned from the terminal input voltage to the starting input voltage, and the application of a bidirectional voltage waveform is completed. In the embodiments of the present application, the starting input voltage Vgstart of the target transistor can be the rated working voltage of the target transistor.

[0057] Specifically, during the process of applying the initial bidirectional voltage waveform to the target transistor, the computer device can acquire a plurality of preliminary transfer characteristics of the target transistor when the target transistor is applied with the initial bidirectional voltage waveform. The initial bidirectional voltage waveform is determined according to a starting input voltage and a terminal input voltage of the target transistor. In the embodiments of the present application, the starting input voltage of the target transistor can be the working voltage of the target transistor; and the terminal input voltage of the target transistor can be the voltage of any point in the cutoff region and the sub-threshold region of the complete transfer characteristic of the target transistor, but in the embodiments of the present application, the terminal input voltage of the target transistor can be the voltage of any point in the saturation region of the complete transfer characteristic of the target transistor.

[0058] The initial bidirectional voltage waveform can be applied to the target transistor in the following manner: the computer device sends the starting input voltage and the terminal input voltage to the power supply device, instructs the power supply device to determine the initial bidirectional voltage waveform according to the starting input voltage and the terminal input voltage, and applies the initial bidirectional voltage waveform to the target transistor.

[0059] S102, in the case where the hysteresis of each preliminary transfer characteristic is in an unstable state, adjusting the terminal input voltage to obtain an adjusted terminal input voltage, and determining an adjusted bidirectional voltage waveform of the target transistor according to the adjusted terminal input voltage and the starting input voltage.

[0060] In actual applications, the computer device can pre-train an algorithm model, and input each preliminary transfer characteristic into the algorithm model in sequence. The algorithm model outputs the stability state of the hysteresis of each preliminary transfer characteristic after judging the stability of the hysteresis of each preliminary transfer characteristic. In the case where the hysteresis of each preliminary transfer characteristic is in an unstable state, the terminal input voltage is adjusted to obtain an adjusted terminal input voltage, and an adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted terminal input voltage and the starting input voltage.

[0061] The terminal input voltage can be adjusted to obtain the adjusted terminal input voltage in the following manner: the terminal input voltage is subjected to arithmetic operation processing to obtain the adjusted terminal input voltage. Alternatively, the arithmetic operation processing can be at least one of addition, subtraction, multiplication, and division.

[0062] Alternatively, the voltage adjustment amount can be a negative value, and the absolute value of the voltage adjustment amount can be less than the rated working voltage of the target transistor, but in the embodiments of the present application, the voltage adjustment amount is equal to the negative rated working voltage, that is, the absolute value of the voltage adjustment amount is equal to the rated working voltage of the target transistor.

[0063] In one embodiment, the step of adjusting the termination input voltage in S102 to obtain the adjusted termination input voltage can include: summing the termination input voltage and the voltage adjustment amount to obtain the adjusted termination input voltage.

[0064] S103, obtaining a plurality of adjusted transfer characteristics of the target transistor when the adjustment bidirectional voltage waveform is applied to the target transistor, and determining the threshold voltage initial value of the target transistor according to each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state.

[0065] Specifically, in the process of reapplying the adjustment bidirectional voltage waveform to the target transistor, the computer device can obtain a plurality of adjusted transfer characteristics of the target transistor when the adjustment bidirectional voltage waveform is applied to the target transistor. The adjustment bidirectional voltage waveform is similar to the waveform shown in the following figure. Figure 3

[0066] The computer device can apply the adjustment bidirectional voltage waveform to the target transistor by sending the adjustment bidirectional voltage waveform to the power supply device and instructing the power supply device to apply the adjustment bidirectional voltage waveform to the target transistor.

[0067] Further, the computer device can input each adjusted transfer characteristic into an algorithm model in sequence, the algorithm model judges the stability of the hysteresis of each adjusted transfer characteristic and outputs the stable state of the hysteresis of each adjusted transfer characteristic, and determines the threshold voltage initial value of the target transistor according to each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state.

[0068] In actual application, the computer device can use curve extrapolation method, linear extrapolation method, derivative method, quadratic function fitting method, etc. to process each adjusted transfer characteristic to obtain the threshold voltage initial value of the target transistor. In the embodiment of the present application, the computer device can use constant current method to process each adjusted transfer characteristic to obtain the threshold voltage initial value of the target transistor.

[0069] ​The technical solutions in the embodiments of the present application obtain multiple preliminary transfer characteristics of a target transistor when the target transistor is applied with an initial bidirectional voltage waveform, the initial bidirectional voltage waveform is determined according to a starting input voltage and a terminal input voltage of the target transistor, in a case where hysteresis of each preliminary transfer characteristic is in an unstable state, the terminal input voltage is adjusted to obtain an adjusted terminal input voltage, and the adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted terminal input voltage and the starting input voltage, multiple adjusted transfer characteristics of the target transistor when the target transistor is applied with the adjusted bidirectional voltage waveform are obtained, and in a case where hysteresis of each adjusted transfer characteristic is in a stable state, a threshold voltage initial value of the target transistor is determined according to each adjusted transfer characteristic; the above method can change the bidirectional voltage waveform applied to the target transistor by adjusting the terminal input voltage of the target transistor, so that in a case where hysteresis of the transfer characteristic of the target transistor is in a stable state, the threshold voltage initial value of the target transistor with higher precision is obtained based on the transfer characteristic in the stable state, to support the research on the negative bias temperature instability of the target transistor; meanwhile, the above method does not need to involve complex algorithms, thereby being capable of reducing the complexity of determining the threshold voltage initial value of the target transistor, speeding up the determination of the threshold voltage initial value of the target transistor, and improving the efficiency of determining the threshold voltage initial value of the target transistor.

[0070] The process of obtaining the multiple preliminary transfer characteristics of the target transistor when the target transistor is applied with the initial bidirectional voltage waveform is described below. In an embodiment, as shown in Figure 4 the step of obtaining the multiple preliminary transfer characteristics of the target transistor when the target transistor is applied with the initial bidirectional voltage waveform in S101 can be implemented in the following manner:

[0071] S111, in the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, the output current and the input voltage of the target transistor are measured.

[0072] Specifically, in the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, the computer device can send a measurement instruction to the measurement device, instructing the measurement device to start synchronously measuring the output current Id (A) and the input voltage Vg (V) of the target transistor. In addition, the computer device can also output a measurement instruction, instructing a user to synchronously measure the output current and the input voltage of the target transistor through the measurement device. Wherein, at the same time, the output current of the target transistor is one-to-one corresponding to the input voltage of the target transistor.

[0073] It should be noted that, applying an initial bidirectional voltage waveform to the target transistor can complete a measurement, and obtain a corresponding relationship data between the output current and the input voltage of the target transistor. In the embodiment of the present application, a plurality of sets of corresponding relationship data obtained by applying the initial bidirectional voltage waveform multiple times are taken as the measurement results.

[0074] S121, constructing each preliminary transfer characteristic according to the measurement results obtained in each process of applying the initial bidirectional voltage waveform.

[0075] In actual application, one set of corresponding relationship data in the measurement results can generate one transfer characteristic curve, i.e., one preliminary transfer characteristic.

[0076] The technical solution in the embodiment of the present application measures the output current and the input voltage of the target transistor in the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, and constructs each preliminary transfer characteristic according to the measurement results obtained in each process of applying the initial bidirectional voltage waveform. The above method can construct the transfer characteristic of the target transistor only by measuring the output current and the input voltage of the target transistor, and the process is relatively simple, without the need of complex algorithm, thereby accelerating the acquisition speed of the transfer characteristic of the target transistor.

[0077] In one embodiment, the preliminary transfer characteristic includes a first curve and a second curve; before executing the steps in the above S200, the above method can further include the following steps as shown in the following S100: Figure 5

[0078] S104, determining that the hysteresis of each preliminary transfer characteristic is in a stable state, in a case that the differences between different first curves in each preliminary transfer characteristic are all within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are all within a difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are all the same.

[0079] It should be noted that, the preliminary transfer characteristic includes a first curve and a second curve, and since the initial bidirectional voltage waveform is symmetrical based on the termination input voltage, correspondingly, the starting point of the first curve and the starting point of the second curve are the same, and the end point of the first curve and the end point of the second curve are the same.

[0080] ​The difference between each pair of first curves in each preliminary transfer characteristic is within a preset difference range, which means that the difference between each pair of first curves in each preliminary transfer characteristic is almost 0, or the first curves in each preliminary transfer characteristic are basically consistent. The difference between each pair of second curves in each preliminary transfer characteristic is within a preset difference range, which means that the difference between each pair of second curves in each preliminary transfer characteristic is almost 0, or the second curves in each preliminary transfer characteristic are basically consistent. Meanwhile, for any preliminary transfer characteristic, the difference between the first curve and the second curve in the preliminary transfer characteristic is the same.

[0081] Specifically, in the case that the difference between different first curves in each preliminary transfer characteristic is within a preset difference range, the difference between different second curves in each preliminary transfer characteristic is within a difference range, and the difference between the first curve and the second curve in each preliminary transfer characteristic is the same, it can be determined that the hysteresis of each preliminary transfer characteristic is in a stable state.

[0082] S105, otherwise, it is determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0083] In the case that any one of the three conditions that the difference between different first curves in each preliminary transfer characteristic is within a preset difference range, the difference between different second curves in each preliminary transfer characteristic is within a difference range, and the difference between the first curve and the second curve in each preliminary transfer characteristic is the same is not met, it can be determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0084] The technical solution in the embodiment of the present application determines that the hysteresis of each preliminary transfer characteristic is in a stable state in the case that the difference between different first curves in each preliminary transfer characteristic is within a preset difference range, the difference between different second curves in each preliminary transfer characteristic is within a difference range, and the difference between the first curve and the second curve in each preliminary transfer characteristic is the same, and otherwise, it is determined that the hysteresis of each preliminary transfer characteristic is in an unstable state. The above method does not need to involve complex algorithms, thereby reducing the complexity of determining the stability of the hysteresis of the preliminary transfer characteristic, speeding up the determination of the hysteresis stability, and improving the efficiency of determining the hysteresis stability. Meanwhile, the above method does not need human intervention, thereby reducing the participation error and improving the accuracy of the determined hysteresis stability of the preliminary transfer characteristic.

[0085] In one embodiment, the adjusted transfer characteristic includes a third curve and a fourth curve. Before performing the step of determining the threshold voltage initial value of the target transistor according to each adjusted transfer characteristic in S103, the above method can further include the following steps:

[0086] In a case that the difference between different third curves in each adjusted transfer characteristic is within the preset difference range, the difference between different fourth curves in each adjusted transfer characteristic is within the difference range, and the difference between the third curve and the fourth curve in each adjusted transfer characteristic is the same, it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state; otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0087] In actual applications, the starting point of the third curve and the starting point of the fourth curve are the same, and the ending point of the third curve and the ending point of the fourth curve are the same.

[0088] In a case that the difference between different third curves in each adjusted transfer characteristic is within the preset difference range, the difference between different fourth curves in each adjusted transfer characteristic is within the difference range, and the difference between the third curve and the fourth curve in each adjusted transfer characteristic is the same, it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state; otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0089] Specifically, in a case that the difference between different third curves in each adjusted transfer characteristic is within the preset difference range, the difference between different fourth curves in each adjusted transfer characteristic is within the difference range, and the difference between the third curve and the fourth curve in each adjusted transfer characteristic is the same, it can be determined that the hysteresis of each adjusted transfer characteristic is in a stable state.

[0090] Meanwhile, in a case that any one of the following conditions is not met: the difference between different third curves in each adjusted transfer characteristic is within the preset difference range, the difference between different fourth curves in each adjusted transfer characteristic is within the difference range, and the difference between the third curve and the fourth curve in each adjusted transfer characteristic is the same, it can be determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0091] In the technical solutions in the embodiments of the present application, in the case that the differences between different third curves in each adjusted transfer characteristic are within the preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are within the difference range, and the differences between the third curves and the fourth curves in each adjusted transfer characteristic are all the same, it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state, otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state. The foregoing method does not need to involve complex algorithms, thereby reducing the complexity of determining the hysteresis stability of the adjusted transfer characteristic, speeding up the determination of the hysteresis stability, and improving the efficiency of determining the hysteresis stability. Meanwhile, the foregoing method does not need to involve manual participation, thereby reducing the participation error and improving the accuracy of the determined hysteresis stability of the adjusted transfer characteristic.

[0092] In some scenarios, after measuring the transfer characteristic of the target transistor twice, the hysteresis of the transfer characteristic is still in an unstable state, at which time at least one adjustment needs to be made to the bidirectional voltage waveform applied to the target transistor to re-measure the latest transfer characteristic of the target transistor until the hysteresis of the latest transfer characteristic is in a stable state. The process of obtaining the latest transfer characteristic in a stable state in the case that the hysteresis of each adjusted transfer characteristic is in an unstable state is described below. In an embodiment, after performing the step of obtaining the multiple adjusted transfer characteristics of the target transistor when the adjusted bidirectional voltage waveform is applied in S103 described above, the foregoing method can further include: Figure 6 as shown in the figure, the foregoing method can further include:

[0093] S106, in the case that the hysteresis of each adjusted transfer characteristic is in an unstable state, detecting whether the variation trends of the threshold voltages obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively are the same.

[0094] It should be noted that in the process of applying the initial bidirectional voltage waveform to the target transistor, the transfer characteristic of the target transistor can be measured multiple times to obtain multiple preliminary transfer characteristics; each preliminary transfer characteristic corresponds to a measurement sequence number. Meanwhile, one preliminary transfer characteristic can also represent the corresponding relationship data between the output current and the input voltage of a group of target transistors through the corresponding transfer characteristic curve. Correspondingly, one threshold voltage can be obtained according to one preliminary transfer characteristic, and multiple threshold voltages can be obtained according to multiple preliminary transfer characteristics, and further, the threshold voltage variation curve with the measurement sequence number can be constructed according to the multiple threshold voltages and the corresponding measurement sequence numbers. The threshold voltage variation trend refers to the rising trend or the falling trend of the threshold voltage variation curve with the measurement sequence number.

[0095] In actual application, the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform can have an upward trend or a downward trend with the measurement serial number, and the threshold voltage obtained when the target transistor is applied with the adjusted bidirectional voltage waveform can have an upward trend or a downward trend with the measurement serial number. Alternatively, the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform can have the same trend or different trend with the threshold voltage obtained when the target transistor is applied with the adjusted bidirectional voltage waveform with the measurement serial number.

[0096] S107, updating the adjusted terminal input voltage according to the detection result and the voltage adjustment amount to obtain a current terminal input voltage.

[0097] Specifically, the computer device can pre-train an input voltage updating model, and then input the detection result and the voltage adjustment amount into the input voltage updating model. The input voltage updating model outputs the current terminal input voltage after updating the adjusted terminal input voltage according to the detection result and the voltage adjustment amount.

[0098] Alternatively, the input voltage updating model can be implemented by at least one of a convolutional neural network model, a fully connected neural network model, a long short-term memory neural network model, a recurrent neural network model, and a residual neural network model.

[0099] In one embodiment, the step of updating the adjusted terminal input voltage according to the detection result and the voltage adjustment amount to obtain a current terminal input voltage in S107 can be implemented in the following manner:

[0100] If the detection result is different, the voltage adjustment amount is updated to obtain a latest voltage adjustment amount, and the latest voltage adjustment amount and the initial input voltage are summed to obtain the current terminal input voltage. If the detection result is the same, the voltage adjustment amount and the initial input voltage are summed to obtain the current terminal input voltage. The latest voltage adjustment amount is less than the voltage adjustment amount.

[0101] Specifically, in the case that the detection result is that the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the threshold voltage obtained when the target transistor is applied with the adjusted bidirectional voltage waveform have different trends with the measurement serial number, the voltage adjustment amount can be updated to obtain a latest voltage adjustment amount, and the latest voltage adjustment amount and the initial input voltage are summed to obtain the current terminal input voltage.

[0102] In actual application, the way of updating the voltage adjustment amount can be multiplying the voltage adjustment amount by a preset threshold value to obtain a latest voltage adjustment amount. The preset threshold value can be -0.1, -0.2, -0.3, etc. In the embodiments of the present application, the preset threshold value is taken as -0.5 for example.

[0103] In addition, in the case that the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively has the same variation trend with the measurement serial number, the current termination input voltage can be directly obtained by summing the voltage adjustment amount and the initial input voltage.

[0104] S108, based on the current termination input voltage and the initial input voltage, reacquire multiple latest transfer characteristics of the target transistor until the hysteresis of each latest transfer characteristic is in a stable state.

[0105] Further, the latest bidirectional voltage waveform can be determined based on the current termination input voltage and the initial input voltage, and then multiple latest transfer characteristics of the target transistor are reacquired in the process of applying the latest bidirectional voltage waveform to the target transistor until the hysteresis of each latest transfer characteristic is in a stable state.

[0106] Exemplarily, taking a P-type carbon nanometer transistor made by a 90 nanometer process as the target transistor, and setting the initial input voltage Vgstart of the target transistor as 1.8V and the termination input voltage Vgstop as 0V, after multiple times of applying the initial bidirectional voltage waveform determined according to the initial input voltage Vgstart and the termination input voltage Vgstop of the target transistor to the target transistor, the multiple preliminary transfer characteristics obtained can be represented by Figure 7 , and Figure 8 is Figure 7 the corresponding threshold voltage Vth(V) variation trend graph with the measurement serial number. From Figure 7 It can be seen that the hysteresis of the multiple preliminary transfer characteristics is in an unstable state, and further, the termination input voltage Vgstop can be adjusted to an adjusted termination input voltage -1.8V, and after multiple times of applying the adjusted bidirectional voltage waveform determined according to the initial input voltage Vgstart and the adjusted termination input voltage of the target transistor to the target transistor, the multiple adjusted transfer characteristics obtained can be represented by Figure 9 , and Figure 10 is Figure 9 the corresponding threshold voltage variation trend graph with the measurement serial number. From Figure 10It can be seen that the hysteresis of the plurality of adjusted transfer characteristics is in an unstable state, and the variation trend of the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively is inconsistent with the measurement sequence number, further, the voltage adjustment amount-1.8V can be updated to the latest voltage adjustment amount-0.5*-1.8V (i.e. 0.9V), the current termination input voltage can be obtained by summing the adjusted termination input voltage and the latest voltage adjustment amount, and after the target transistor is applied with the latest bidirectional voltage waveform determined according to the initial input voltage Vgstart and the current termination input voltage of the target transistor multiple times, the plurality of transfer characteristics obtained in this case can be represented by Figure 11 , and Figure 12 is Figure 11 the corresponding threshold voltage variation trend diagram with the measurement sequence number. Wherein, from Figure 12 It can be seen that the hysteresis of the plurality of transfer characteristics in this case is in a stable state, at this time, the measurement is ended.

[0107] The technical scheme in the embodiments of the present application detects whether the variation trend of the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively is the same or not in the case that the hysteresis of each adjusted transfer characteristic is in an unstable state, and updates the termination input voltage of the target transistor to obtain the current termination input voltage according to the detection result and the voltage adjustment amount, reacquires the plurality of latest transfer characteristics of the target transistor based on the current termination input voltage and the initial input voltage, and stops until the hysteresis of each latest transfer characteristic is in a stable state; the above method can select the termination input voltage of the target transistor according to the consistency of the variation trend of the threshold voltage obtained by the adjacent two measurements before the current time, so as to effectively help to speed up the speed of the hysteresis of the latest transfer characteristic in a stable state, and the processing process is relatively simple, thereby being able to speed up the processing speed; at the same time, the above method can flexibly select a reasonable way to update the adjusted termination input voltage according to different detection results, so as to improve the accurate basic processing for subsequent reaching the hysteresis of the latest transfer characteristic in a stable state.

[0108] In an embodiment, the present application also provides a threshold voltage initial value determination method, which is applied to a computer device, and the method comprises the following processes:

[0109] (1) In the process of applying the initial bidirectional voltage waveform to the target transistor multiple times, the output current and the input voltage of the target transistor are measured;

[0110] According to the measurement results obtained in each process of applying the initial bidirectional voltage waveform, each preliminary transfer characteristic is constructed; the initial bidirectional voltage waveform is determined according to the initial input voltage and the termination input voltage of the target transistor; the preliminary transfer characteristic comprises a first curve and a second curve;

[0111] In a case where the difference between different first curves in each preliminary transfer characteristic is within a preset difference range, the difference between different second curves in each preliminary transfer characteristic is within the difference range, and the difference between the first curve and the second curve in each preliminary transfer characteristic is the same, it is determined that the hysteresis of each preliminary transfer characteristic is in a stable state; otherwise, it is determined that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0112] In a case where the hysteresis of each preliminary transfer characteristic is in an unstable state, the termination input voltage and the voltage adjustment amount are summed to obtain an adjusted termination input voltage, and an adjusted bidirectional voltage waveform of the target transistor is determined according to the adjusted termination input voltage and the starting input voltage.

[0113] A plurality of adjusted transfer characteristics of the target transistor when the adjusted bidirectional voltage waveform is applied thereto are obtained; the adjusted transfer characteristics include third curves and fourth curves.

[0114] In a case where the difference between different third curves in each adjusted transfer characteristic is within a preset difference range, the difference between different fourth curves in each adjusted transfer characteristic is within the difference range, and the difference between the third curve and the fourth curve in each adjusted transfer characteristic is the same, it is determined that the hysteresis of each adjusted transfer characteristic is in a stable state; otherwise, it is determined that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0115] In a case where the hysteresis of each adjusted transfer characteristic is in a stable state, a threshold voltage initial value of the target transistor is determined according to each adjusted transfer characteristic.

[0116] The execution processes of (1) to (5) above can refer to the descriptions of the above embodiments for details, which have similar implementation principles and technical effects and will not be described herein again.

[0117] It should be understood that, although each step in the flowchart involved in each of the above embodiments is displayed in sequence according to the arrow, these steps are not necessarily executed in sequence according to the arrow. Unless otherwise specified herein, the execution of these steps has no strict sequence limitation, and these steps can be executed in other sequences. Moreover, at least part of the steps in the flowchart involved in each of the above embodiments can include multiple steps or stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of these steps or stages is not necessarily sequential, but can be executed in rotation or alternation with at least part of other steps or steps or stages in other steps.

[0118] Based on the same inventive concept, the embodiment of the present application further provides a threshold voltage initial value determination device for implementing the threshold voltage initial value determination method described above. The implementation scheme for solving the problem provided by the device is similar to the implementation scheme described in the above method, so the specific limitations in one or more threshold voltage initial value determination device embodiments provided below can refer to the limitations of the threshold voltage initial value determination method in the foregoing, which will not be described here.

[0119] In one embodiment, Figure 13 For the structural schematic diagram of the threshold voltage initial value determination device in an embodiment of the present application, the threshold voltage initial value determination device provided by the embodiment of the present application can be applied to a computer device. As shown in Figure 13 The threshold voltage initial value determination device of the embodiment of the present application can include an acquisition module 11, an adjustment module 12 and a determination module 13, wherein:

[0120] The acquisition module 11 is configured to acquire a plurality of preliminary transfer characteristics of the target transistor when the initial bidirectional voltage waveform is applied to the target transistor; the initial bidirectional voltage waveform is determined according to the starting input voltage and the terminal input voltage of the target transistor;

[0121] The adjustment module 12 is configured to adjust the terminal input voltage to obtain an adjusted terminal input voltage in the case that the hysteresis of each preliminary transfer characteristic is in an unstable state, and determine an adjusted bidirectional voltage waveform of the target transistor according to the adjusted terminal input voltage and the starting input voltage;

[0122] The determination module 13 is configured to acquire a plurality of adjusted transfer characteristics of the target transistor when the adjusted bidirectional voltage waveform is applied to the target transistor, and determine the threshold voltage initial value of the target transistor according to each adjusted transfer characteristic in the case that the hysteresis of each adjusted transfer characteristic is in a stable state.

[0123] The threshold voltage initial value determination device provided by the embodiment of the present application can be used to execute the technical solutions in the threshold voltage initial value determination method embodiments of the present application described above, and the implementation principles and technical effects are similar, which will not be described here.

[0124] In one embodiment, the acquisition module 11 includes a measurement unit and a construction unit, wherein:

[0125] The measurement unit is configured to measure the output current and the input voltage of the target transistor in the process of applying the initial bidirectional voltage waveform to the target transistor multiple times;

[0126] The construction unit is configured to construct each preliminary transfer characteristic according to the measurement results obtained in the process of applying the initial bidirectional voltage waveform each time.

[0127] The threshold voltage initial value determination apparatus provided in the embodiments of the present application can be used to execute the technical solutions in the threshold voltage initial value determination method embodiments of the present application, and has similar implementation principles and technical effects, which will not be repeated here.

[0128] In one of the embodiments, the preliminary transfer characteristics include first curves and second curves; and the threshold voltage initial value determination apparatus further includes a first determination module, in which:

[0129] The first determination module is configured to determine that the hysteresis of each preliminary transfer characteristic is in a stable state if the differences between different first curves in each preliminary transfer characteristic are all within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are all within the difference range, and the differences between the first curves and the second curves in each preliminary transfer characteristic are all the same; otherwise, determine that the hysteresis of each preliminary transfer characteristic is in an unstable state.

[0130] The threshold voltage initial value determination apparatus provided in the embodiments of the present application can be used to execute the technical solutions in the threshold voltage initial value determination method embodiments of the present application, and has similar implementation principles and technical effects, which will not be repeated here.

[0131] In one of the embodiments, the adjustment module 12 is specifically configured to:

[0132] Sum the termination input voltage and the voltage adjustment amount to obtain an adjusted termination input voltage.

[0133] The threshold voltage initial value determination apparatus provided in the embodiments of the present application can be used to execute the technical solutions in the threshold voltage initial value determination method embodiments of the present application, and has similar implementation principles and technical effects, which will not be repeated here.

[0134] In one of the embodiments, the adjusted transfer characteristics include third curves and fourth curves; and the threshold voltage initial value determination apparatus further includes a second determination module, in which:

[0135] The second determination module is configured to determine that the hysteresis of each adjusted transfer characteristic is in a stable state if the differences between different third curves in each adjusted transfer characteristic are all within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are all within the difference range, and the differences between the third curves and the fourth curves in each adjusted transfer characteristic are all the same; otherwise, determine that the hysteresis of each adjusted transfer characteristic is in an unstable state.

[0136] The threshold voltage initial value determination apparatus provided in the embodiments of the present application can be used to execute the technical solutions in the threshold voltage initial value determination method embodiments of the present application, and has similar implementation principles and technical effects, which will not be repeated here.

[0137] In one of the embodiments, the threshold voltage initial value determination apparatus further comprises a detection module, an updating module and an execution module, wherein:

[0138] The detection module is configured to, in the case that the hysteresis of each adjusted transfer characteristic is unstable, detect whether the variation trend of the threshold voltage obtained when the target transistor is applied with the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform respectively is the same or not.

[0139] The updating module is configured to update the final input voltage after adjustment according to the detection result and the voltage adjustment amount to obtain the current final input voltage.

[0140] The execution module is configured to reacquire the plurality of transfer characteristics of the target transistor based on the current final input voltage and the initial input voltage until the hysteresis of each transfer characteristic is stable.

[0141] The threshold voltage initial value determination apparatus provided by the embodiments of the present application can be used to execute the technical solutions in the threshold voltage initial value determination method embodiments of the present application, and the implementation principles and technical effects are similar, which will not be repeated here.

[0142] In one of the embodiments, the updating module is specifically configured to:

[0143] If the detection result is not the same, the voltage adjustment amount is updated to obtain the latest voltage adjustment amount, and the current final input voltage is obtained by summing the latest voltage adjustment amount and the initial input voltage; the latest voltage adjustment amount is less than the voltage adjustment amount.

[0144] If the detection result is the same, the current final input voltage is obtained by summing the voltage adjustment amount and the initial input voltage.

[0145] The threshold voltage initial value determination apparatus provided by the embodiments of the present application can be used to execute the technical solutions in the threshold voltage initial value determination method embodiments of the present application, and the implementation principles and technical effects are similar, which will not be repeated here.

[0146] The specific limitations of the threshold voltage initial value determination apparatus can be referred to the limitations of the threshold voltage initial value determination method in the above, which will not be repeated here. Each module in the threshold voltage initial value determination apparatus can be realized by software, hardware and combinations thereof, in whole or in part. Each module can be embedded in or independent of the processor in the computer device in hardware form, or can be stored in the memory in the computer device in software form, so as to be called and executed by the processor to perform the operations corresponding to each module.

[0147] In one embodiment, a computer device is also provided, which can be a server, and the internal structure diagram thereof can be as shown in Figure 14As shown in the figure. The computer device includes a processor, a memory and a network interface connected through a system bus. Among them, the processor of the computer device is used to provide processing capability. The memory of the computer device includes a non-volatile storage medium, an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The database of the computer device is used to store the transfer characteristic of the target transistor, the starting input voltage and the ending input voltage. The network interface of the computer device is used to communicate with the external terminal through the network connection. The computer program is executed by the processor to implement a threshold voltage initial value determination method.

[0148] Those skilled in the art can understand that, Figure 14 The structure shown in the figure is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different component arrangement.

[0149] In one embodiment, a computer device is also provided, including a memory and a processor, the memory stores a computer program, and the processor implements the technical solutions in the threshold voltage initial value determination method embodiments of the present application when executing the computer program, which has similar implementation principles and technical effects, and will not be repeated here.

[0150] In one embodiment, a computer readable storage medium is also provided, which stores a computer program, and the computer program implements the technical solutions of the threshold voltage initial value determination method of the present application when executed by the processor, which has similar implementation principles and technical effects, and will not be repeated here.

[0151] In one embodiment, a computer program product is also provided, including a computer program, and the computer program implements the technical solutions of the threshold voltage initial value determination method of the present application when executed by the processor, which has similar implementation principles and technical effects, and will not be repeated here.

[0152] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when the computer program is executed, the processes of the above-mentioned embodiments of the methods can be included. Any reference to memory, storage, database or other medium used in each embodiment provided by the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration but not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0153] Each technical feature of the above embodiments can be combined arbitrarily. In order to make the description simple, all possible combinations of each technical feature in the above embodiments are not described, but as long as the combination of the technical features does not exist, it should be considered as the scope of the present application.

[0154] The above embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be pointed out that for those skilled in the art, without departing from the concept of the present application, some modifications and improvements can be made, which are all within the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A method for determining the initial value of a threshold voltage, characterized in that, The method includes: Multiple preliminary transfer characteristics are obtained when an initial bidirectional voltage waveform is applied to the target transistor; the initial bidirectional voltage waveform is determined based on the starting input voltage and the ending input voltage of the target transistor. When the hysteresis of each of the initial transfer characteristics is in an unstable state, the adjusted termination input voltage is obtained by summing the termination input voltage and the voltage adjustment amount, and the adjusted bidirectional voltage waveform of the target transistor is determined based on the adjusted termination input voltage and the initial input voltage. Multiple adjusted transfer characteristics are obtained when the target transistor is subjected to an adjusted bidirectional voltage waveform, and the initial value of the threshold voltage of the target transistor is determined based on each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state. In the case of hysteresis instability of each of the adjusted transfer characteristics, it is detected whether the threshold voltage obtained when the target transistor is subjected to the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform has the same trend as the measurement sequence number. If the detection results are different, the voltage adjustment amount is updated to obtain the latest voltage adjustment amount, and the latest voltage adjustment amount and the termination input voltage are summed to obtain the current termination input voltage; the latest voltage adjustment amount is less than the voltage adjustment amount. If the detection results are the same, the current termination input voltage is obtained by summing the voltage adjustment amount and the termination input voltage. Based on the current termination input voltage and the starting input voltage, multiple transfer characteristics of the target transistor are reacquired until the hysteresis of each transfer characteristic is in a stable state.

2. The method according to claim 1, characterized in that, The acquisition of multiple preliminary transfer characteristics when an initial bidirectional voltage waveform is applied to the target transistor includes: During the process of repeatedly applying the initial bidirectional voltage waveform to the target transistor, the output current and input voltage of the target transistor are measured. Each preliminary transfer characteristic is constructed based on the measurement results obtained during each application of the initial bidirectional voltage waveform.

3. The method according to claim 1 or 2, characterized in that, The preliminary transfer characteristics include a first curve and a second curve; the method further includes: When the differences between different first curves in each of the preliminary transfer characteristics are all within a preset difference range, the differences between different second curves in each of the preliminary transfer characteristics are all within the difference range, and the differences between the first curve and the second curve in each of the preliminary transfer characteristics are all the same, it is determined that the hysteresis of each of the preliminary transfer characteristics is in a stable state. Otherwise, it is determined that the hysteresis of each of the preliminary transfer characteristics is in an unstable state.

4. The method according to claim 1 or 2, characterized in that, The adjusted transfer characteristics include a third curve and a fourth curve; the method further includes: When the differences between different third curves in each of the adjusted transfer characteristics are all within a preset difference range, the differences between different fourth curves in each of the adjusted transfer characteristics are all within the difference range, and the differences between the third curve and the fourth curve in each of the adjusted transfer characteristics are the same, it is determined that the hysteresis of each of the adjusted transfer characteristics is in a stable state. Otherwise, it is determined that the hysteresis of each of the adjusted transfer characteristics is in an unstable state.

5. A device for determining the initial value of a threshold voltage, characterized in that, The device includes: An acquisition module is used to acquire multiple preliminary transfer characteristics of a target transistor when an initial bidirectional voltage waveform is applied; the initial bidirectional voltage waveform is determined based on the starting input voltage and the ending input voltage of the target transistor; The adjustment module is used to sum the termination input voltage and the voltage adjustment amount to obtain the adjusted termination input voltage when the hysteresis of each of the initial transfer characteristics is in an unstable state, and to determine the adjusted bidirectional voltage waveform of the target transistor based on the adjusted termination input voltage and the initial input voltage. The determination module is used to acquire multiple adjusted transfer characteristics of the target transistor when an adjusted bidirectional voltage waveform is applied, and to determine the initial value of the threshold voltage of the target transistor based on each adjusted transfer characteristic when the hysteresis of each adjusted transfer characteristic is in a stable state. The detection module is used to detect whether the threshold voltage obtained when the target transistor is subjected to the initial bidirectional voltage waveform and the adjusted bidirectional voltage waveform has the same trend as the measurement sequence number under the condition of hysteresis instability of each of the adjusted transfer characteristics. An update module is used to update the voltage adjustment amount to obtain a latest voltage adjustment amount if the detection results are different, and to sum the latest voltage adjustment amount and the termination input voltage to obtain the current termination input voltage; the latest voltage adjustment amount is less than the voltage adjustment amount; if the detection results are the same, the voltage adjustment amount and the termination input voltage are summed to obtain the current termination input voltage. An execution module is configured to reacquire multiple transfer characteristics of the target transistor based on the current termination input voltage and the starting input voltage, until the hysteresis of each transfer characteristic is in a stable state.

6. The apparatus according to claim 5, characterized in that, The acquisition module includes: A measurement unit is used to measure the output current and input voltage of the target transistor during the process of applying the initial bidirectional voltage waveform to the target transistor multiple times; The construction unit is used to construct each of the preliminary transfer characteristics based on the measurement results obtained during each application of the initial bidirectional voltage waveform.

7. The apparatus according to claim 5, characterized in that, The preliminary transfer characteristics include a first curve and a second curve; the device further includes: The first determining module is configured to determine that the hysteresis of each preliminary transfer characteristic is in a stable state when the differences between different first curves in each preliminary transfer characteristic are all within a preset difference range, the differences between different second curves in each preliminary transfer characteristic are all within the difference range, and the differences between the first curve and the second curve in each preliminary transfer characteristic are all the same; otherwise, it determines that the hysteresis of each preliminary transfer characteristic is in an unstable state.

8. The apparatus according to claim 5, characterized in that, The adjusted transfer characteristics include the third curve and the fourth curve; the device also includes: The second determining module is used to determine that the hysteresis of each adjusted transfer characteristic is in a stable state when the differences between different third curves in each adjusted transfer characteristic are all within a preset difference range, the differences between different fourth curves in each adjusted transfer characteristic are all within the difference range, and the differences between the third curve and the fourth curve in each adjusted transfer characteristic are the same. Otherwise, it is determined that the hysteresis of each of the adjusted transfer characteristics is in an unstable state.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1-4.

10. A readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1-4.

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