MOS device, anti-overheating method thereof, controller, control system and vehicle

Abstract

The invention belongs to the technical field of semiconductor devices, and discloses an MOS device, an anti-overheating method thereof, a controller, a control system and a vehicle. The MOS device comprises a device body and a metal layer arranged on the surface of the device body. According to the MOS device, the metal layer is arranged on the surface of the device body, and heat of the MOS device is rapidly conducted out by using the metal layer, so that the heat dissipation effect of the MOS device is improved, the temperature of the MOS device is prevented from being too high, the bearing capacity of the MOS device during long-time large-current work is improved, and the reliability of the MOS device is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices, and in particular relates to a MOS device and an overheating prevention method thereof, a controller, a control system and a vehicle. Background Art

[0002] MOS tube is a metal-oxide semiconductor field effect transistor, or MOS field effect transistor for short. In existing MOS tubes, due to the internal resistance between the PN junctions, when a large current passes through for a long time, the PN junction will generate a lot of heat. If the heat cannot be dissipated in time, the MOS tube will work at a high temperature for a long time, and eventually the PN junction or MOS tube will burn out, which will cause the load to fail to work properly. Summary of the invention

[0003] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a MOS device and its overheating prevention method, controller, control system and vehicle, which can quickly dissipate the heat of the MOS device in time to avoid the MOS device from overheating and ensure the performance of the MOS device.

[0004] According to a first aspect of the present invention, a MOS device is provided, comprising: a device body and a metal layer arranged on a surface of the device body.

[0005] In addition, the MOS device of the present invention may also have the following additional technical features:

[0006] Preferably, the metal layer is a thermosensitive metal layer, and the resistance value of the thermosensitive metal layer changes based on the temperature change of the device body.

[0007] Preferably, the metal layer is arranged on the non-welding surface of the device body.

[0008] Preferably, the device body has a gate, and the gate is configured to be electrically connected to a controller.

[0009] Preferably, a first pin and a second pin are respectively provided on the thermosensitive metal layer, and the gate of the device body is electrically connected to the controller through the first pin and the second pin respectively.

[0010] Preferably, the device body further comprises a source and a drain, one of the source and the drain is electrically connected to a load, and the other is electrically connected to a power supply; a diode is connected between the source and the drain.

[0011] Preferably, a first resistor is connected in series between the controller and the device body;

[0012] Or / and, a second resistor is connected in series between the controller and the load, and the second resistor is connected in parallel with the device body;

[0013] Or / and, a capacitor is connected in series between the controller and the load, and the capacitor is connected in parallel with the device body.

[0014] Preferably, the device body includes any one of an N-channel enhancement MOS device, an N-channel depletion MOS device, a P-channel enhancement MOS device or a P-channel depletion MOS device.

[0015] A second aspect of the present invention provides a method for preventing overheating of a MOS device. The method is based on the MOS device described in any embodiment of the present application, and the method comprises:

[0016] Obtaining an electrical performance parameter value of a metal layer on the surface of the device body, wherein the electrical performance parameter includes at least one of a voltage value, a current value, and a resistance value;

[0017] The temperature of the device body is determined according to the electrical performance parameters of the metal layer.

[0018] Preferably, the electrical performance parameter includes a resistance value, and the resistance value is obtained according to a current value of the metal layer and a preset voltage applied to the metal layer.

[0019] Preferably, if the temperature of the device body is greater than or equal to a preset temperature threshold, the device body is controlled to be disconnected or the current of the device body is controlled to be reduced; and / or, if the temperature of the device body is less than a preset temperature threshold, the device body is controlled to be turned on.

[0020] According to a third aspect of the present invention, a controller is provided, comprising a processor, wherein the processor is connected to a memory, wherein the processor stores a computer program, and wherein the processor executes the computer program to implement the overheating prevention method for the MOS device described in any embodiment of the present application.

[0021] A fourth aspect of the present invention provides a control system, comprising the controller described in any embodiment of the present application and the MOS device described in any embodiment of the present application, wherein the MOS device is connected to the controller.

[0022] Preferably, the control system further includes a load, the MOS device is connected to the load, and the controller is connected to the load through the MOS device.

[0023] Preferably, the control system further comprises a power supply, the MOS device is connected to the power supply, and the controller is connected to the power supply via the MOS device.

[0024] A fifth aspect of the present invention provides a vehicle, comprising the MOS device described in any embodiment of the present application; or comprising the controller described in any embodiment of the present application; or comprising the control system described in any embodiment of the present application.

[0025] According to the MOS device and its overheating prevention method, controller, control system and vehicle provided by the present invention, the MOS device sets a metal layer on the surface of the MOS device, and uses the metal layer to quickly conduct the heat of the MOS device, thereby improving the heat dissipation effect of the MOS device, avoiding the MOS device from overheating, improving the MOS device's ability to withstand long-term high-current operation, and improving the reliability of the MOS device. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0027] Figure 1 It is a schematic diagram of the structure of an existing N-channel enhancement MOS device;

[0028] Figure 2 It is a circuit diagram of an existing N-channel enhancement MOS device;

[0029] Figure 3 An exemplary structural diagram of a MOS device provided in an embodiment of the present application;

[0030] Figure 4 A control structure diagram of a MOS device access circuit provided in an embodiment of the present application;

[0031] Figure 5 An exemplary structural diagram of a controller provided in an embodiment of the present application.

[0032] In the above figure: 100 device body; 110 P-type silicon substrate; 111 substrate lead; 120 N-type region; 121 source; 122 drain; 130 insulating layer; 131 gate; 140 diode; 150 first resistor; 160 second resistor; 170 capacitor;

[0033] 200 metal layer; 210 first pin; 220 second pin;

[0034] 300 controllers; 400 loads; 500 power supplies. DETAILED DESCRIPTION

[0035] The present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It should also be noted that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0036] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0037] The terms used in this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The singular forms of "a", "said" and "the" used in this application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings. It should also be understood that the term "and / or" used in this article refers to and includes any or all possible combinations of one or more associated listed items.

[0038] Unless the context requires otherwise, throughout the specification and claims, the term "comprising" is to be construed in an open, inclusive sense, ie, meaning "including, but not limited to."

[0039] In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example" or "some examples" are intended to indicate that a specific feature, structure, material or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0040] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0041] like Figure 1 As shown, due to the internal resistance between the PN junctions of the existing MOS tubes, when a large current passes through for a long time, the PN junctions will generate a lot of heat. If the heat cannot be dissipated in time, the accumulated heat exceeds the range that the material can withstand, which will cause the PN junction or the entire MOS tube to burn out. Therefore, it is necessary to improve the existing MOS tubes to improve the tolerance of the MOS tubes when working with large currents for a long time and improve the reliability of the MOS tubes.

[0042] refer to Figure 2 According to a first aspect of an embodiment of the present application, a MOS device is provided, comprising: a device body 100 and a metal layer 200 arranged on a surface of the device body 100 .

[0043] Specifically, the device body 100 is a conventional device in the art. According to the difference in the conductive channel, the device body 100 can be divided into two categories: N-channel and P-channel. Each category is further divided into two types: enhancement type and depletion type. Therefore, the device body 100 includes any one of an N-channel enhancement MOS device, an N-channel depletion MOS device, a P-channel enhancement MOS device, or a P-channel depletion MOS device.

[0044] Among them, the structure of N-channel enhancement MOS device is as follows Figure 1 and Figure 2 As shown, the N-channel enhancement MOS device uses a low-doped P-type silicon material as a substrate, and two highly doped N-type regions 120 are manufactured on the P-type silicon substrate 110. The two N-type regions 120 are led out using leads as a source 121 (S pole) and a drain 122 (D pole), wherein the source 121 is connected to the substrate lead 111 of the P-type substrate, and the other is the drain 122; a very thin oxide film (silicon dioxide) insulating layer 130 is covered on the surface of the P-type substrate, and an electrode is led out as a gate 131 (G pole). The gate 131 (G pole) of this field effect transistor is insulated from the P-type semiconductor substrate, and the drain 122 (D pole) and the source 121 (S pole), so it is also called an insulated gate field effect transistor. Among them, after the P-type substrate and the source 121 are connected, a PN junction is formed between the source 121 and the drain 122, which is a diode inside the device body 100.

[0045] In the present application embodiment, Figure 3 As shown, the surface of the device body 100 is coated with a metal layer 200, and the specific coating position and coating area of ​​the metal layer 200 can be set according to the use requirements, wherein the size of the coating area is adjusted and determined according to the amount of heat generated by the device body 100 and the speed at which the device body 100 needs to dissipate heat. It should be noted that the metal layer 200 is set on the non-welding surface of the device body 100, wherein the device body 100 is generally a rectangular parallelepiped structure, and the gate 131 pin, the source 121 pin and the drain 122 pin are distributed on the bottom surface of the device body 100, and these pins will be welded on the PCB circuit board. Therefore, the coating position of the metal layer 200 cannot be set on the welding surface of the device body 100 with pins, and the metal layer 200 can be coated on the non-welding surface of the device body 100, that is, coated on any one or more surfaces of the device body 100 except the bottom surface.

[0046] The metal layer 200 is filled with one or more metal materials, preferably metal materials with good heat dissipation, and the specific metal material type can be set according to actual needs. By coating the surface of the device body 100 with the metal layer 200, the heat dissipation effect of the MOS device can be improved, the temperature of the MOS device can be prevented from being too high, the tolerance of the MOS device when working for a long time with a large current can be improved, and the reliability of the MOS device can be improved.

[0047] In some embodiments, Figure 3 As shown, the metal layer 200 is a thermosensitive metal layer 200 , and the resistance value of the thermosensitive metal layer 200 changes based on the temperature change of the device body 100 .

[0048] Specifically, the thermosensitive metal layer 200 includes one or more thermosensitive metal materials, and the specific type of thermosensitive metal material can be set according to the electrical characteristics, heating characteristics, and heat dissipation requirements of the actual device body 100. Thermosensitive metal materials are mainly divided into two types: one is a positive temperature coefficient, and its resistance value increases with the increase of temperature; the other is a negative temperature coefficient, and its resistance value decreases with the increase of temperature. Thermosensitive metal materials have the following characteristics: temperature characteristics: the resistance value of the thermosensitive metal material changes with the change of temperature, and has a good linear relationship; resistance value change characteristics: the resistance value of the thermosensitive metal material changes with the change of temperature, and the change range is large. Exemplary, the thermosensitive metal material can be platinum, rhodium, chromium, platinum-rhodium alloy, copper-nickel alloy, nickel-chromium alloy, tin oxide, nickel oxide, cobalt oxide, copper oxide, antimony oxide, iron oxide, etc.

[0049] The thermosensitive metal layer 200 is coated on the surface of the device body 100, and the resistance value of the thermosensitive metal material in the thermosensitive metal layer 200 will change with the temperature change of the device body 100; wherein, when the thermosensitive metal material is subjected to temperature changes, its internal grain structure will change, thereby causing the resistance value to change. By measuring the resistance value of the thermosensitive metal layer 200, since the resistance value of the thermosensitive metal layer 200 is related to the temperature, the corresponding real-time temperature of the device body 100 can be obtained, which is convenient for subsequent corresponding operations on the device body 100 based on the real-time temperature of the device body 100, preventing the device body 100 from being overheated, avoiding the PN junction or the device body 100 from being burned due to high temperature, and ensuring the normal operation of the load 400 connected to the device body 100.

[0050] In some embodiments, Figure 4 As shown, the device body 100 has a gate 131 , and the gate 131 is configured to be electrically connected to the controller 300 .

[0051] Specifically, the controller 300 is electrically connected to the gate 131 (G pole) of the device body 100, and the on or off of the device body 100 can be controlled by controlling the pressure value applied by the controller 300 to the gate 131 of the device body 100. Among them, the device body 100 is a commonly used power switching device, and its basic principle is to use the electrical characteristics of the MOS field effect tube to control the current in the circuit. The main part of the MOS tube is composed of an N-type channel and a P-type base, wherein an insulating layer 130 is covered above the channel, which is called the gate 131. When the voltage applied to the gate 131 changes, the charge density in the channel will also change, thereby changing the conductivity of the channel.

[0052] For example, in an N-channel enhancement MOS device, when the voltage applied by the controller 300 to the gate 131 is positive, or the voltage applied to the gate 131 is greater than the voltage threshold, the electrons in the N-channel will move toward the P-type substrate to form a conductive path; when the voltage applied by the controller 300 to the gate 131 is negative or zero, the electrons in the N-channel will move toward the insulating layer 130, and the conductive path will be disconnected.

[0053] In some embodiments, Figure 3 and Figure 4 As shown, a first pin 210 and a second pin 220 are respectively disposed on the thermosensitive metal layer 200 , and the gate 131 of the device body 100 is electrically connected to the controller 300 through the first pin 210 and the second pin 220 .

[0054] Specifically, the thermosensitive metal layer 200 is provided with a first pin 210 (TM + ) and the second pin 220 (TM - ) is electrically connected to the controller 300, wherein the first pin 210 and the second pin 220 are located in the same plane as the gate pin 131, the source pin 121 and the drain pin 122 of the device body 100, so as to facilitate welding on the PCB circuit board. When the resistance value of the thermosensitive metal layer 200 changes with the temperature change of the surface of the device body 100, the current value flowing through the thermosensitive metal layer 200 will also change synchronously, and then the controller 300 can accurately measure the real-time temperature of the surface of the device body 100 by detecting the change of the current value flowing through the thermosensitive metal layer 200.

[0055] The controller 300 monitors the real-time current between the first pin 210 and the second pin 220 on the thermosensitive metal layer 200. Since the current value of the thermosensitive metal layer 200 changes with the temperature change on the surface of the device body 100, the real-time temperature of the surface of the device body 100 can be obtained. When the controller 300 detects that the real-time temperature on the surface of the device body 100 is greater than or equal to the preset temperature threshold, the controller 300 controls the device body 100 to disconnect by controlling the gate 131 (G pole) of the device body 100; otherwise, the device body 100 is controlled to remain in the on state. By monitoring the surface temperature of the device body 100 and controlling the on or off of the device body 100 in the circuit, it is possible to prevent the MOS device from being damaged or burned due to overheating or overcurrent, thereby improving the reliability and protection performance of the MOS device during operation.

[0056] In some embodiments, the device body 100 further has a source 121 and a drain 122 , one of the source 121 and the drain 122 is electrically connected to the load 400 , and the other is electrically connected to the power supply 500 ; a diode 140 is connected between the source 121 and the drain 122 .

[0057] Specifically, the device body 100 generally has a gate 131 (G pole), a source 121 (S pole) and a drain 122 (D pole). Figure 4 As shown, for an N-channel MOS device, the G pole of the N-channel MOS device is electrically connected to the controller 300, the S pole is electrically connected to the load 400, and the D pole is electrically connected to the power supply 500 (VCC). For a P-channel MOS device, the G pole of the P-channel MOS device is electrically connected to the controller 300, the S pole is electrically connected to the power supply 500 (VCC), and the D pole is electrically connected to the load 400.

[0058] Among them, Figure 4 As shown, a diode 140 can also be connected between the S pole and the D pole of the device body 100. When the voltage between the S pole and the D pole changes, the parasitic diode 140 of the device body 100 will generate a cut-off voltage to prevent the PN junction of the MOS device from being broken down and causing damage to the device, and protect the MOS device from being affected by an excessively high D pole voltage. The parasitic diode 140 of the MOS device can allow current to flow in two directions between the S pole and the D pole. When the D pole voltage is greater than the S pole voltage, the parasitic diode 140 of the MOS device exhibits a normal diode 140 conduction characteristic; when the S pole voltage is greater than the D pole voltage, it exhibits reverse conduction.

[0059] In some embodiments, Figure 4 As shown, a first resistor 150 is connected in series between the controller 300 and the device body 100;

[0060] Or / and, a second resistor 160 is connected in series between the controller 300 and the load 400, and the second resistor 160 is connected in parallel with the device body 100;

[0061] Or / and, a capacitor 170 is connected in series between the controller 300 and the load 400 , and the capacitor 170 is connected in parallel with the device body 100 .

[0062] Specifically, a first resistor 150 is connected in series on the wire connecting the controller 300 and the gate 131 of the device body 100. The resistance of the first resistor 150 can be set according to actual needs. Exemplarily, the resistance of the first resistor 150 is 10k. The setting of the first resistor 150 can prevent the MOS device from being damaged by overcurrent and improve the switching response speed of the MOS device.

[0063] Or / and, a second resistor 160 is connected in series on the wire connecting the controller 300 and the load 400, and the second resistor 160 is connected in parallel with the series circuit formed by the first resistor 150 and the device body 100. The resistance of the second resistor 160 can be set according to actual needs. Exemplarily, the resistance of the second resistor 160 is 100k. The setting of the second resistor 160 can prevent the MOS device from being damaged by overcurrent and improve the switching response speed of the MOS device.

[0064] Or / and, a capacitor 170 is connected in series on the wire connecting the controller 300 and the load 400, the capacitor 170 is connected in parallel with the series circuit formed by the first resistor 150 and the device body 100, the capacitor 170 is connected in parallel with the second resistor 160, and the resistance value of the capacitor 170 can be set according to actual needs. For example, if the capacitance value of the capacitor 170 is 1NF, the capacitor 170 is used to buffer voltage changes, stabilize the working state of the MOS device, and improve the frequency response characteristics of the MOS device.

[0065] Compared with existing MOS devices, the MOS device provided in the embodiment of the present application has faster heat dissipation efficiency, and has better overheating and overcurrent protection effect when used with the controller 300, thereby improving the reliability and protection performance of the MOS device during operation.

[0066] It should be noted that the MOS device provided in the embodiments of the present application can be used in various types of switch control circuits, such as various types of control circuits mounted on vehicles.

[0067] For example, the power supply 500 module of a vehicle needs to perform various voltage conversions, among which commonly used ones are buck circuits, boost circuits, etc. Whether it is boosting or bucking, the MOS device provided in the embodiment of the present application can be continuously turned on or off to achieve voltage changes.

[0068] For example, there are generally two types of power devices in a vehicle, resistive load and inductive load. Driving both types of loads 400 requires current. Since the on-resistance of the MOS device provided in the embodiment of the present application is extremely low, the MOS device of the present application can be used to drive power devices of resistive loads and inductive loads.

[0069] For example, the MOS device provided in the embodiment of the present application can be used for high-side and low-side driving of a vehicle. For low-side driving, a MOS device is used. The MOS device is close to the ground end, and current is injected into the driving end of the MOS device from the outside. This type is called low-side driving. Whether the load 400 is working is determined by controlling the opening and closing of the MOS device. For high-side driving, the MOS device is close to the power supply 500, and the driving end of the MOS device outputs current to the external load 400. This type is called high-side driving. Whether the load 400 is working is also determined by controlling the opening and closing of the MOS device.

[0070] For example, the load 400 of a vehicle is generally driven by a half-bridge or full-bridge circuit, wherein the half-bridge circuit uses two MOS devices provided in the embodiments of the present application to work in turn, and even if any one of the MOS devices fails, the load 400 can still work normally. Common load 400 applications include fuel injection valve driving, motor driving, etc. In addition to the advantages of the half-bridge circuit, the full-bridge circuit can also change the direction of current flow, such as being used in motor control to control the speed of the motor, and can also control the forward and reverse rotation of the motor.

[0071] A second aspect of the present invention provides a method for preventing overheating of a MOS device. The method is based on the MOS device described in any embodiment of the present application, and the method comprises:

[0072] Obtaining an electrical performance parameter value of the metal layer 200 on the surface of the device body 100, wherein the electrical performance parameter includes at least one of a voltage value, a current value, and a resistance value;

[0073] The temperature of the device body 100 is determined according to the electrical performance parameters of the metal layer 200 .

[0074] Specifically, the controller 300 obtains the electrical performance parameter value of the metal layer 200 through the first pin 210 and the second pin 220 on the surface of the metal layer 200, and the real-time temperature of the device body 100 can be determined according to the electrical performance parameter value. According to the real-time temperature of the device body 100, the device body 100 can be controlled to be turned on or off by the controller 300 to avoid the MOS device from overheating. Among them, the heat on the surface of the device body 100 can be conducted out faster through the metal layer 200 coated on the surface of the device body 100, which speeds up the heat dissipation effect of the device body 100, avoids the MOS device from overheating, improves the tolerance of the MOS device when working with a large current for a long time, improves the reliability of the MOS device, and ensures the long-term stable operation of the MOS device.

[0075] It can be understood that the MOS device described in any embodiment of the present application is used to implement the MOS device overheating prevention method of the present application. The technical features and technical effects corresponding to the specific overheating prevention method are consistent with the technical features and technical effects of the MOS device, and the present application will not repeat them.

[0076] In some embodiments, the electrical performance parameter includes a resistance value, and the resistance value is obtained according to a current value of the metal layer 200 and a preset voltage applied to the metal layer 200 .

[0077] Specifically, the metal layer 200 is a thermosensitive metal layer, and the resistance value of the thermosensitive metal layer will change with the temperature change of the device body 100. When the thermosensitive metal layer 200 on the surface of the device body 100 is electrically connected to the controller 300 through the first pin 210 and the second pin 220, the controller 300 will apply a preset voltage U between the first pin 210 and the second pin 220 of the thermosensitive metal layer 200, and the controller 300 can obtain the real-time current value I of the thermosensitive metal layer 200 through the first pin 210 and the second pin 220. Since the thermosensitive metal layer 200 connected to the first pin 210 and the second pin 220 itself has a resistance value R, the resistance value R will change with the temperature change of the device body 100. According to the preset voltage U applied to the metal layer 200 and the real-time current value I of the thermosensitive metal layer 200, the real-time resistance value of the thermosensitive metal layer 200 can be calculated using the formula R=U / I. Since the resistance value of the thermosensitive metal layer 200 is related to the temperature change on the surface of the device body 100, a fitting curve of the resistance value of the thermosensitive metal layer 200 and the temperature on the surface of the device body 100 can be obtained in advance by function fitting or machine learning, and the real-time temperature of the surface of the device body 100 can be obtained by substituting the calculated real-time resistance value of the thermosensitive metal layer 200 into the fitting curve.

[0078] In some embodiments, if the temperature of the device body 100 is greater than or equal to a preset temperature threshold, the device body 100 is controlled to be disconnected or the current of the device body 100 is controlled to be reduced; and / or, if the temperature of the device body 100 is less than a preset temperature threshold, the device body 100 is controlled to be turned on.

[0079] Specifically, when the controller 300 monitors that the real-time temperature of the surface of the device body 100 is greater than or equal to the preset temperature threshold, the device body 100 is at risk of overheating damage or burning. The controller 300 controls the gate 131 (G pole) of the device body 100 to control the device body 100 to disconnect or reduce the current value passing through the device body 100 to reduce the heat generation of the MOS device, thereby avoiding long-term overheating of the MOS device to cause damage or burning, and plays a role in protecting the MOS device in the circuit. When the controller 300 monitors that the real-time temperature of the surface of the device body 100 is less than the preset temperature threshold, the controller 300 controls the device body 100 to continue to remain in the on state.

[0080] A third aspect of the present invention, as Figure 5 As shown, a controller 300 is provided, including a processor 301, wherein the processor 301 is connected to a memory 302, wherein the processor 301 stores a computer program, and wherein the processor 301 executes the computer program to implement the overheating prevention method for the MOS device described in any embodiment of the present application.

[0081] Specifically, the controller 300 includes one or more processors (CPU) 301, which can perform various appropriate actions and processes according to the program stored in the read-only memory (ROM) 302 or the program loaded from the storage part 308 to the random access memory (RAM) 303. In the RAM 303, various programs and data required for system operation are also stored. The CPU 301, the ROM 302, and the RAM 303 are connected to each other through a bus 304. An input / output (I / O) interface 305 is also connected to the bus 304.

[0082] The following components are connected to the I / O interface 305: an input section 306 including a keyboard, a mouse, etc.; an output section 307 including a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 308 including a hard disk, etc.; and a communication section 309 including a network interface card such as a LAN card, a modem, etc. The communication section 409 performs communication processing via a network such as the Internet. A drive 310 is also connected to the I / O interface 305 as needed. A removable medium 311, such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc., is installed on the drive 310 as needed, so that a computer program read therefrom is installed into the storage section 308 as needed.

[0083] In particular, the process of the overheating prevention method of the MOS device provided in the embodiment of the present application can be implemented as a computer software program. For example, the embodiment of the present disclosure includes a computer program product, which includes a computer program tangibly contained on a machine-readable medium, and the computer program includes a program code for executing the overheating prevention method of the MOS device. In such an embodiment, the computer program can be downloaded and installed from the network through the communication part 309, and / or installed from the removable medium 311.

[0084] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, method and computer program product according to various embodiments of the present invention. In this regard, each square box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, program segment or a part of a code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the square box can also occur in a different order from the order marked in the accompanying drawings. For example, two square boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each square box in the block diagram and / or flow chart, and the combination of the square boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs the specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0085] According to a fourth aspect of the present invention, a control system is provided, comprising the controller 300 described in any embodiment of the present application and the MOS device described in any embodiment of the present application, wherein the MOS device is connected to the controller 300 .

[0086] Specifically, the MOS device includes a device body 100 and a metal layer 200 disposed on the surface of the device body 100, the device body 100 has a gate 131, the controller 300 is electrically connected to the gate 131 of the device body 100, and the metal layer 200 is a thermosensitive metal layer, the thermosensitive metal layer has a first pin 210 and a second pin 220, and the gate 131 of the device body 100 is electrically connected to the controller 300 through the first pin 210 and the second pin 220. The controller 300 can obtain the current value flowing through the thermosensitive metal layer in real time through the first pin 210 and the second pin 220, and obtain the real-time resistance value of the thermosensitive metal layer according to the current value, and then determine the real-time temperature of the surface of the device body 100. If the temperature of the device body 100 is greater than or equal to a preset temperature threshold, the controller 300 controls the device body 100 to disconnect or reduces the current of the device body 100 through the gate 131 of the device body 100; and / or, if the temperature of the device body 100 is lower than the preset temperature threshold, the controller 300 controls the device body 100 to turn on through the gate 131 of the device body 100, thereby preventing the MOS device from being damaged or burned due to long-term overheating, thereby protecting the MOS device in the circuit.

[0087] In some implementations, the control system further includes a load 400 , the MOS device is connected to the load 400 , and the controller 300 is connected to the load 400 through the MOS device.

[0088] Specifically, those skilled in the art can set the source 121 or drain 122 of the device body 100 of the MOS device to connect with the load 400 according to actual needs. The controller 300 controls whether the load 400 is working through the MOS device to ensure the normal operation of the load 400.

[0089] In some implementations, the control system further includes a power supply 500 , the MOS device is connected to the power supply 500 , and the controller 300 is connected to the power supply 500 through the MOS device.

[0090] Specifically, one of the source 121 or the drain 122 of the device body 100 of the MOS device is connected to the load 400 , and the other is connected to the power source 500 to ensure the normal operation of the load 400 .

[0091] A fifth aspect of the present invention provides a vehicle, characterized in that it includes the MOS device described in any embodiment of the present application; or includes the controller 300 described in any embodiment of the present application; or includes the control system described in any embodiment of the present application.

[0092] Specifically, the specific technical features and technical effects of the vehicle of the present application are consistent with the technical features and technical effects of the MOS device, the controller 300 and the control system, and the embodiments of the present application will not be repeated.

[0093] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with (but not limited to) technical features with similar functions disclosed in the present application.

Claims

1. A MOS device, characterized in that: include: A device body (100) and a metal layer (200) arranged on the surface of the device body (100).

2. The MOS device according to claim 1, characterized in that: The metal layer (200) is a thermosensitive metal layer, and the resistance value of the metal layer (200) changes based on the temperature change of the device body (100).

3. The MOS device according to claim 2, characterized in that: The metal layer (200) is arranged on the non-welding surface of the device body (100).

4. The MOS device according to claim 2, characterized in that: The device body (100) has a gate (131), and the gate (131) is configured to be electrically connected to a controller (300).

5. The MOS device according to claim 4, characterized in that: A first pin (210) and a second pin (220) are respectively arranged on the thermosensitive metal layer (200), and the gate (131) of the device body (100) is electrically connected to the controller (300) via the first pin (210) and the second pin (220).

6. The MOS device according to claim 4, characterized in that: The device body (100) further comprises a source electrode (121) and a drain electrode (122); one of the source electrode (121) and the drain electrode (122) is electrically connected to a load (400), and the other is electrically connected to a power source (500); and a diode (140) is connected between the source electrode (121) and the drain electrode (122).

7. The MOS device according to claim 6, characterized in that: A first resistor (150) is connected in series between the controller (300) and the device body (100); Or / and, a second resistor (160) is connected in series between the controller (300) and the load (400), and the second resistor (160) is connected in parallel with the device body (100); Or / and, a capacitor (170) is connected in series between the controller (300) and the load (400), and the capacitor (170) is connected in parallel with the device body (100).

8. The MOS device according to any one of claims 1 to 7, characterized in that: The device body (100) comprises any one of an N-channel enhancement MOS device, an N-channel depletion MOS device, a P-channel enhancement MOS device or a P-channel depletion MOS device.

9. A method for preventing overheating of a MOS device, characterized in that: The method is based on the MOS device according to any one of claims 1 to 8, and the method comprises: Obtaining an electrical performance parameter value of a metal layer (200) on the surface of a device body (100), wherein the electrical performance parameter comprises at least one of a voltage value, a current value, and a resistance value; The temperature of the device body (100) is determined according to the electrical performance parameters of the metal layer (200).

10. The method for preventing overheating of a MOS device according to claim 9, characterized in that: The electrical performance parameter comprises a resistance value, and the resistance value is obtained according to a current value of the metal layer (200) and a preset voltage applied to the metal layer (200).

11. The method for preventing overheating of a MOS device according to claim 9 or 10, characterized in that: The method further comprises: If the temperature of the device body (100) is greater than or equal to a preset temperature threshold, the device body (100) is controlled to be disconnected or the current of the device body (100) is controlled to be reduced; and / or, if the temperature of the device body (100) is less than a preset temperature threshold, the device body (100) is controlled to be turned on.

12. A controller, characterized in that: The method comprises a processor connected to a memory, wherein the processor stores a computer program, and wherein the processor executes the computer program to implement the method for preventing overheating of a MOS device according to any one of claims 9 to 11.

13. A control system, characterized in that: It comprises the controller according to claim 12 and the MOS device according to any one of claims 1 to 8, wherein the MOS device is connected to the controller.

14. The control system according to claim 13, characterized in that: The control system further includes a load, the MOS device is connected to the load, and the controller is connected to the load through the MOS device.

15. The control system according to claim 13 or 14, characterized in that: The control system further includes a power supply, the MOS device is connected to the power supply, and the controller is connected to the power supply through the MOS device.

16. A vehicle, characterized in that: A MOS device comprising any one of claims 1 to 8; or comprising the controller of claim 12; or A control system comprising any one of claims 13-15.

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