High-efficiency perovskite solar cell and preparation method and application thereof

Abstract

The invention discloses a high-efficiency perovskite solar cell and a preparation method and application thereof, and belongs to the field of new energy. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a perovskite light absorption layer, a passivation layer, an electron transport layer and a top electrode layer which are stacked in sequence. And the passivation layer is made of guanidyl chloride. According to the perovskite solar cell provided by the invention, guanidyl chloride is adopted as the passivation layer, so that the interface characteristic between the perovskite material and the hole transport layer can be effectively improved. And guanidyl chloride is introduced to the surface of perovskite for passivation treatment, so that the photoelectric conversion efficiency of the cell is improved, and the stability of the cell is remarkably enhanced.

Description

Technical Field

[0001] The present invention relates to the field of new energy technology, and in particular to a high-efficiency perovskite solar cell and a preparation method and application thereof. Background Art

[0002] Perovskite solar cells are solar cells that use perovskite-type organic metal halide semiconductors as light-absorbing materials. In recent years, they have become an important research direction in the emerging field of solar energy technology due to their excellent photoelectric conversion efficiency and cost advantages. The photoelectric conversion efficiency of perovskite solar cells has reached a level close to that of traditional silicon solar cells in recent years, but they still face some key technical challenges, especially in terms of electron transfer efficiency between functional layers and cell stability. These problems limit their large-scale commercial application.

[0003] First, the performance of perovskite solar cells is affected by the efficiency of electron transfer between functional layers. In solar cells, photogenerated carriers (electrons and holes) need to migrate between different functional layers and eventually be collected at the electrodes. If the electron transfer between the functional layers is not smooth, the photogenerated carriers will recombine at the interface, resulting in photocurrent loss, thereby reducing the photoelectric conversion efficiency of the cell. Especially in perovskite solar cells, the interface is often the bottleneck of electron transfer efficiency.

[0004] Secondly, perovskite materials are very sensitive to environmental factors, which makes their stability an urgent problem to be solved. Perovskite materials undergo structural changes when exposed to moisture, oxygen or high temperature, resulting in a significant decline in their photoelectric performance. For example, the lead ions in perovskite materials may react with moisture under the action of moisture, resulting in the destruction of perovskite crystals. In addition, perovskite materials have poor thermal stability, and high temperature environments may cause material degradation, thereby affecting the long-term stability of the entire battery. This problem makes the reliability of perovskite solar cells in long-term use a key challenge, especially when used in outdoor environments. Therefore, the problems in the inter-functional layer electron transfer efficiency and battery stability of perovskite solar cells still need to be further studied to improve the comprehensive performance of perovskite solar cells. Summary of the invention

[0005] The present invention aims to solve the problem of low cell efficiency in preparing perovskite solar cells in the prior art. The present invention provides a high-efficiency perovskite solar cell and a preparation method and application thereof.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] The invention provides a high-efficiency perovskite solar cell, comprising a conductive substrate, a hole transport layer, a perovskite light absorption layer, a passivation layer, an electron transport layer and a top electrode layer which are stacked in sequence; the material of the passivation layer is guanidine chloride.

[0008] The concentration of the guanidine chloride is 1-3 mg / mL.

[0009] The material of the hole transport layer is NiO x , x is 1 to 1.5, CuSCN, CuO x or CuI.

[0010] The material of the perovskite light absorbing layer is (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3.

[0011] The material of the electron transport layer includes TiO2, SnO2 or one of fullerene and fullerene derivatives.

[0012] The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon.

[0013] The conductive substrate is made of indium tin oxide.

[0014] The thickness of the conductive substrate is 200-400nm; the thickness of the hole transport layer is 20-40nm; the thickness of the perovskite light absorption layer is 300-700nm; the thickness of the passivation layer is 2-10nm; the thickness of the electron transport layer is 10-100nm; and the thickness of the top electrode layer is 50-500nm.

[0015] The present invention also provides a method for preparing a high-efficiency perovskite solar cell, comprising:

[0016] A hole transport layer is obtained by magnetron sputtering a hole transport layer material on a conductive substrate and annealing the material;

[0017] Spin coating on the hole transport layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3, performing two-stage spin coating at different rotation speeds, adding chlorobenzene to the perovskite precursor solution before the end of spin coating, and annealing after spin coating to obtain a perovskite light absorbing layer;

[0018] Spin coating a solution including a passivation material on the perovskite layer, and annealing after spin coating to form a passivation layer;

[0019] An electron transport material and a top electrode material are sequentially deposited on the passivation layer by vacuum evaporation to form an electron transport layer and a top electrode layer, respectively, to constitute a perovskite solar cell.

[0020] The present invention also provides a photovoltaic device, comprising the above-mentioned high-efficiency perovskite solar cell.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] The passivation layer of the perovskite solar cell provided by the present invention adopts guanidinium chloride, which is a compound with good passivation performance, and can effectively improve the interface properties between the perovskite material and the electron transport layer. Guanidinium chloride can combine with defect sites in the perovskite surface, reduce the number of surface defects, thereby reducing the recombination probability of carriers, and enhancing the collection and transmission efficiency of photocurrent. At the same time, guanidinium chloride can improve the stability of the perovskite material to a certain extent, because it can effectively resist the erosion of the perovskite material by external environmental factors such as moisture, and reduce the risk of material degradation. The introduction of guanidinium chloride to passivate the perovskite surface can improve the efficiency and stability of the perovskite solar cell. Work in synergy with other layers to jointly improve the comprehensive performance of the perovskite solar cell.

[0023] Furthermore, the concentration of guanidine chloride is set in the range of 1 to 3 mg / mL. Such a concentration can ensure the passivation effect while avoiding uneven material deposition or adverse effects on the perovskite layer caused by excessively high concentration.

[0024] Furthermore, the provided hole transport materials can efficiently conduct holes and have good interface compatibility with the perovskite light-absorbing layer. These materials are widely used in high-efficiency perovskite solar cells because they have high hole mobility and good stability, which can effectively enhance the current collection performance of the battery.

[0025] Furthermore, the provided perovskite light-absorbing material has excellent light absorption capability, and doping with Cs and Br can improve the stability of the material and help to improve the photoelectric conversion efficiency, especially maintaining stability under high humidity or high temperature conditions.

[0026] Furthermore, the provided electron transport materials can effectively conduct electrons and form a good interface with the perovskite light absorbing layer. These materials can reduce charge recombination and improve the photocurrent collection efficiency of the battery.

[0027] The method for preparing perovskite solar cells in the present invention involves multiple technologies such as magnetron sputtering, spin coating, vacuum evaporation, etc., which can ensure high-quality deposition of each layer; the two-stage spin coating and annealing process can improve the crystallization quality of the perovskite layer and optimize the interface performance. At the same time, the formation of the passivation layer effectively improves the interface quality, reduces defects, and helps to improve the efficiency and stability of the battery.

[0028] This high-efficiency perovskite solar cell can be widely used in photovoltaic devices, and due to its high efficiency and good stability, it can provide a longer service life and higher photoelectric conversion efficiency in practical use. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solution of the embodiment of the present invention, the following is a brief introduction to the drawings required for use in the present invention:

[0030] Figure 1 is a schematic diagram of a perovskite solar cell of the present invention;

[0031] In the figure, 1. conductive substrate; 2. hole transport layer; 3. perovskite light absorption layer; 4. passivation layer; 5. electron transport layer; 6. top electrode layer. DETAILED DESCRIPTION

[0032] The present invention will be further described below in conjunction with the accompanying drawings:

[0033] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention described and shown in the drawings here can usually be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0034] like Figure 1 As shown, a high-efficiency perovskite solar cell provided by the present invention includes a conductive substrate 1, a hole transport layer 2, a perovskite light absorption layer 3, a passivation layer 4, an electron transport layer 5 and a top electrode layer 6 which are stacked in sequence.

[0035] The material of the hole transport layer is nickel oxide (NiO x (x is 1 to 1.5)), cuprous thiocyanate (CuSCN) or cuprous iodide (CuI). Preferably, the hole transport layer is made of NiOx (x ranges from 1 to 1.5).

[0036] The material of the perovskite light absorbing layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3.

[0037] The material of the passivation layer is guanidine chloride (GACl), and the concentration of guanidine chloride is 1-3 mg / mL.

[0038] The material of the electron transport layer is titanium dioxide (TiO2), tin oxide (SnO2) or fullerene (C 60 ) and a fullerene derivative. Preferably, the material of the electron transport layer is C 60 .

[0039] The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon. Preferably, the material of the top electrode layer is gold.

[0040] The conductive substrate is transparent conductive glass, and the transparent conductive glass is indium tin oxide (FTO).

[0041] In an embodiment of the present invention, the thickness of the conductive substrate is 200-400nm, preferably 250-350nm; specifically 290nm, 300nm, 310nm, 320nm, etc. The thickness of the hole transport layer is 20-40nm, preferably 25-35nm; more preferably 30nm. The thickness of the perovskite light absorption layer is 300-700nm, preferably 300-500nm, more preferably 400-500nm. The thickness of the passivation layer is 2-10nm, preferably 2-5nm, and most preferably 3nm. The thickness of the electron transport layer is 10-100nm, preferably 20-80nm, more preferably 30-60nm, and most preferably 40-50nm. The thickness of the top electrode is 50-500nm, preferably 100-400nm, and more preferably 100-200nm.

[0042] In the following examples, unless otherwise specified, all materials used can be obtained through common channels; and the test methods adopted are conventional methods in the art.

[0043] Embodiment 1:

[0044] The method for preparing the perovskite solar cell of this embodiment includes:

[0045] S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside;

[0046] S2, NiO was deposited on FTO glass substrate by magnetron sputtering x (x is 1 to 1.5), and then annealing is performed in an environment of 300° C. for 10 minutes to form a hole transport layer, the thickness of the hole transport layer is about 30 nm;

[0047] S3, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 Perovskite precursor solution (concentration of 1.5 mol / L, solvent DMF:DMSO=4:1), take 100 microliters of perovskite precursor solution and spin coat it on the hole transport layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm;

[0048] S4, spin coating a guanidine chloride solution (the concentration of the guanidine chloride solution is 1 mg / mL, and the solvent is DMSO) on the perovskite layer at a rotation speed of 3000 rpm for 30 seconds, and then annealing on a hot stage at 100° C. for 10 minutes to form a passivation layer, and the thickness of the passivation layer is about 3 nm;

[0049] S5, depositing C on the passivation layer by vacuum evaporation 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm;

[0050] S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0051] Embodiment 2:

[0052] The method for preparing the perovskite solar cell of this embodiment includes:

[0053] S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside;

[0054] S2, NiO was deposited on FTO glass substrate by magnetron sputtering x (x is 1 to 1.5), and then annealing is performed in an environment of 300° C. for 10 minutes to form a hole transport layer, the thickness of the hole transport layer is about 25 nm;

[0055] S3, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 Perovskite precursor solution (concentration of 1.5 mol / L, solvent DMF:DMSO=4:1), take 100 microliters of perovskite precursor solution and spin coat it on the hole transport layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 500nm;

[0056] S4, spin coating a guanidine chloride solution (the concentration of the guanidine chloride solution is 1.5 mg / mL, and the solvent is DMSO) on the perovskite layer at a rotation speed of 3000 rpm for 30 seconds, and then annealing on a hot stage at 100° C. for 10 minutes to form a passivation layer, and the thickness of the passivation layer is about 1 nm;

[0057] S5, depositing C on the passivation layer by vacuum evaporation 60 , forming an electron transport layer, the thickness of the electron transport layer is about 50nm;

[0058] S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 150 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0059] Embodiment 3:

[0060] The method for preparing the perovskite solar cell of this embodiment includes:

[0061] S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside;

[0062] S2, NiO was deposited on FTO glass substrate by magnetron sputtering x (x is 1 to 1.5), and then annealing is performed in an environment of 300° C. for 10 minutes to form a hole transport layer, the thickness of the hole transport layer is about 40 nm;

[0063] S3, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05)3 Perovskite precursor solution (concentration of 1.5 mol / L, solvent DMF:DMSO=4:1), take 100 μl of perovskite precursor solution and spin coat it on the hole transport layer, the first stage spin coating speed is 2000 rpm, spin coating 10 s, the second stage spin coating speed is 5000, spin coating 40 s, 15 s before the end of spin coating, quickly add 200 μl of chlorobenzene as anti-solvent, then anneal on a hot stage at 100 ° C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 300 nm;

[0064] S4, spin coating a guanidine chloride solution (the concentration of the guanidine chloride solution is 2 mg / mL, and the solvent is DMSO) on the perovskite layer at a rotation speed of 3000 rpm for 30 seconds, and then annealing on a hot stage at 100° C. for 10 minutes to form a passivation layer, and the thickness of the passivation layer is about 4 nm;

[0065] S5, depositing SnO2 on the passivation layer by vacuum evaporation to form an electron transport layer, the thickness of the electron transport layer is about 30 nm;

[0066] S6, depositing graphite on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 200 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0067] Embodiment 4:

[0068] The method for preparing the perovskite solar cell of this embodiment includes:

[0069] S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside;

[0070] S2, NiO was deposited on FTO glass substrate by magnetron sputtering x (x is 1 to 1.5), and then annealing is performed in an environment of 300° C. for 10 minutes to form a hole transport layer, the thickness of the hole transport layer is about 30 nm;

[0071] S3, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05)3 Perovskite precursor solution (concentration of 1.5 mol / L, solvent DMF:DMSO=4:1), take 100 microliters of perovskite precursor solution and spin coat it on the hole transport layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 500nm;

[0072] S4, spin coating a guanidine chloride solution (the concentration of the guanidine chloride solution is 3 mg / mL, and the solvent is DMSO) on the perovskite layer at a rotation speed of 3000 rpm for 30 seconds, and then annealing on a hot stage at 100° C. for 10 minutes to form a passivation layer. The thickness of the passivation layer is about 2 nm;

[0073] S5, depositing C on the passivation layer by vacuum evaporation 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm;

[0074] S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0075] Embodiment 5:

[0076] The method for preparing the perovskite solar cell of this embodiment includes:

[0077] S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside;

[0078] S2, CuSCN was magnetron sputtered on the FTO glass substrate, and then annealed at 300 °C for 10 minutes to form a hole transport layer with a thickness of about 30 nm;

[0079] S3, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05)3 Perovskite precursor solution (concentration of 1.5 mol / L, solvent DMF:DMSO=4:1), take 100 microliters of perovskite precursor solution and spin coat it on the hole transport layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm;

[0080] S4, spin coating a guanidine chloride solution (the concentration of the guanidine chloride solution is 2 mg / mL, and the solvent is DMSO) on the perovskite layer at a rotation speed of 3000 rpm for 30 seconds, and then annealing on a hot stage at 100° C. for 10 minutes to form a passivation layer, and the thickness of the passivation layer is about 3 nm;

[0081] S5, depositing C on the passivation layer by vacuum evaporation 60 , forming an electron transport layer, the thickness of the electron transport layer is about 50nm;

[0082] S6, depositing graphite on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 150 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0083] Comparative Example 1:

[0084] The preparation method of the perovskite solar cell of this comparative example comprises:

[0085] S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside;

[0086] S2, NiO was deposited on FTO glass substrate by magnetron sputtering x (x is 1 to 1.5), and then annealing is performed in an environment of 300° C. for 10 minutes to form a hole transport layer, the thickness of the hole transport layer is about 30 nm;

[0087] S3, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05)3 Perovskite precursor solution (concentration of 1.5 mol / L, solvent DMF:DMSO=4:1), take 100 microliters of perovskite precursor solution and spin coat it on the hole transport layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, quickly add 200 microliters of chlorobenzene as anti-solvent, then anneal on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm;

[0088] S4, depositing C on the passivation layer by vacuum evaporation 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm;

[0089] S5, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this comparative example is manufactured through the above steps.

[0090] Battery performance test: The performance of the perovskite solar cells prepared in the examples and comparative examples was tested under room temperature using a 3A solar simulator at 100 mW / cm 2 The photoelectric conversion efficiency of the cells prepared in the embodiment and the comparative example was tested under the light intensity of 0.084 cm 2 The test results are shown in Table 1:

[0091] Table 1

[0092]

[0093] As can be seen from Table 1, the photoelectric conversion efficiency of Example 1 is 1.3% higher than that of Comparative Example 1, which significantly improves the photoelectric conversion efficiency of the perovskite solar cell. The present invention improves the interface quality, inhibits charge recombination, and improves the carrier transmission efficiency by comprehensively optimizing the performance of each layer of materials and introducing a guanidine chloride passivation layer between the perovskite light absorption layer and the electron transport layer, thereby significantly improving the photoelectric conversion efficiency.

[0094] The endpoints and any values ​​of the scope disclosed in the present invention are not limited to the precise scope or value, and these scopes or values ​​should be understood to include values ​​close to these scopes or values. For numerical ranges, the endpoint values ​​of each scope, the endpoint values ​​of each scope and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be regarded as specifically disclosed in this article. Hereinafter, in principle, each technical solution can be combined with each other to obtain a new technical solution, which should also be regarded as specifically disclosed in this article.

[0095] The above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, a person skilled in the art can still modify or make equivalent substitutions to the specific implementations of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention are within the scope of protection of the claims of the present invention to be approved.

Claims

1. A high-efficiency perovskite solar cell, characterized in that: It includes a conductive substrate, a hole transport layer, a perovskite light absorption layer, a passivation layer, an electron transport layer and a top electrode layer which are stacked in sequence; The material of the passivation layer is guanidine chloride.

2. A high-efficiency perovskite solar cell according to claim 1, characterized in that: The concentration of the guanidine chloride is 1-3 mg / mL.

3. A high-efficiency perovskite solar cell according to claim 1, characterized in that: The material of the hole transport layer is NiO x , x is 1 to 1.5, CuSCN, CuO x or CuI.

4. A high-efficiency perovskite solar cell according to claim 1, characterized in that: The material of the perovskite light absorbing layer is (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3.

5. A high-efficiency perovskite solar cell according to claim 1, characterized in that: The material of the electron transport layer includes TiO2, SnO2 or one of fullerene and fullerene derivatives.

6. A high-efficiency perovskite solar cell according to claim 1, characterized in that: The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon.

7. A high-efficiency perovskite solar cell according to claim 1, characterized in that: The conductive substrate is made of indium tin oxide.

8. The high-efficiency perovskite solar cell according to claim 1, characterized in that: The thickness of the conductive substrate is 200-400nm; the thickness of the hole transport layer is 20-40nm; the thickness of the perovskite light absorption layer is 300-700nm; the thickness of the passivation layer is 2-10nm; the thickness of the electron transport layer is 10-100nm; and the thickness of the top electrode layer is 50-500nm.

9. A method for preparing a high-efficiency perovskite solar cell, characterized in that: include: A hole transport layer is obtained by magnetron sputtering a hole transport layer material on a conductive substrate and annealing the material; Spin coating on the hole transport layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3, performing two-stage spin coating at different rotation speeds, adding chlorobenzene to the perovskite precursor solution before the end of spin coating, and annealing after spin coating to obtain a perovskite light absorbing layer; Spin coating a solution including a passivation material on the perovskite layer, and annealing after spin coating to form a passivation layer; An electron transport material and a top electrode material are sequentially deposited on the passivation layer by vacuum evaporation to form an electron transport layer and a top electrode layer, respectively, to constitute a perovskite solar cell.

10. A photovoltaic device, characterized in that: A high-efficiency perovskite solar cell comprising the method described in any one of claims 1 to 8.

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