A high-precision double-sided synchronous etching system and method for quartz crystals

Abstract

The present invention relates to the technical field of double-sided etching of quartz crystals, and discloses a high-precision double-sided synchronous etching system and method for quartz crystals. The method includes: obtaining the etching information of the first etching surface and the etching information of the second etching surface during the etching of the quartz crystal, obtaining a data difference value according to the synchronous operation data of the etching guns and the synchronous operation data of the etching guns in adjacent time periods, determining a data difference threshold according to the historical synchronous operation data of each etching gun, screening the data difference value according to the data difference threshold, and obtaining screened data outliers based on a Gaussian mixture model. According to the data outliers, it is determined whether the synchronous operation of the two etching guns is in an abnormal state. According to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal, the etching guns in the abnormal state are adjusted. The present invention effectively improves the efficiency and precision during the double-sided etching of quartz crystals.

Description

Technical Field

[0001] The present invention relates to the technical field of quartz crystal double-sided etching, and more particularly, to a high-precision double-sided synchronous etching system and method for quartz crystals. Background Art

[0002] In the manufacturing process of quartz crystals, the etching process, as an important step, directly affects the quality and performance of the final product. To ensure the accuracy and stability of quartz crystals, the etching process needs to be carried out synchronously on both sides. Synchronous etching can ensure the uniformity of etching on both sides and reduce internal stress problems caused by uneven etching.

[0003] However, in actual operation, the synchronism, stability of the etching guns, and the uniformity of the etching depth are easily affected by multiple factors, such as the etching solution flow rate, temperature fluctuations, and changes in the performance of the etching guns. These can all lead to inconsistent etching effects and thus affect the quality of quartz crystals. At the same time, to ensure that the working states of the two etching guns are consistent during the double-sided synchronous etching process, it is usually necessary to monitor and analyze the synchronous operation data of the etching guns in real time. Most traditional synchronous control methods rely on manual adjustment and simple feedback mechanisms and lack a comprehensive analysis of complex data changes.

[0004] Therefore, how to accurately obtain and process the operation data of the etching guns, timely detect potential anomalies, and effectively adjust them has become a key technical problem in the etching process. Summary of the Invention

[0005] In view of this, the present invention proposes a high-precision double-sided synchronous etching system and method for quartz crystals, aiming to solve the problem that the existing synchronous control methods rely on manual adjustment and simple feedback, lack an accurate analysis of complex data changes such as the synchronism, stability of the etching guns, and the uniformity of the etching depth, and thus cannot effectively solve the problem of inconsistent etching effects.

[0006] The present invention proposes a high-precision double-sided synchronous etching method for quartz crystals, including:

[0007] Obtaining the etching information of the first etching surface and the second etching surface during the etching of the quartz crystal, wherein the etching information includes: the synchronous operation data of the two etching guns and the synchronous operation data of the etching guns in adjacent time periods;

[0008] Obtain the data difference value based on the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in the adjacent period. Obtain the historical synchronous operation data of each etching gun. Determine the data difference threshold according to the historical synchronous operation data. Screen the data difference value according to the data difference threshold, and obtain the screened data outliers based on the Gaussian mixture model. Determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data outliers;

[0009] Adjust the etching gun in the abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0010] Further, when determining the data difference threshold according to the historical synchronous operation data, it includes:

[0011] ;

[0012] Among them, Y represents the difference data threshold, represents the difference mean of the historical normal synchronous operation data, represents the difference standard deviation of the historical normal synchronous operation data, and k represents the adjustment factor, where:

[0013] ;

[0014] ;

[0015] ;

[0016] Among them, Wt represents the data difference value of the historical normal synchronous operation data, represents the synchronous operation data at time t, represents the synchronous operation data at time t-1, and N represents the number of historical normal synchronous operation data.

[0017] Further, when screening the data difference value according to the data difference threshold, it includes:

[0018] Relate the data difference value to the data difference threshold and eliminate small difference data:

[0019] When the data difference value is greater than the data difference threshold, retain the synchronous operation data corresponding to the data difference value;

[0020] When the data difference value is less than or equal to the data difference threshold, determine the synchronous operation data corresponding to the data difference value as small difference data and eliminate it.

[0021] Further, when obtaining the screened data outliers based on the Gaussian mixture model, it includes:

[0022] Calculate the outliers of each screened data based on the Gaussian mixture model:

[0023] ;

[0024] Among them, p(x∣Θ) represents the outlier of data x, K is the number of Gaussian components, and π k represents the mixing coefficient of the k-th component, represents the probability density that data x belongs to a certain Gaussian component.

[0025] Furthermore, when determining whether the synchronous operation of the two etching guns is in an abnormal state according to the data outliers, it includes:

[0026] Determine whether the synchronous operation of the two etching guns is in an abnormal state according to the relationship between the data outliers and the pre-configured preset data outliers:

[0027] When the data outliers are less than or equal to the preset data outliers, it is determined that the synchronous operation of the two etching guns is not in an abnormal state;

[0028] When the data outliers are greater than the preset data outliers, it is determined that the synchronous operation of the two etching guns is in an abnormal state.

[0029] Furthermore, the synchronous operation data of the two etching guns are specifically: the etching speed and etching depth of the two etching guns.

[0030] Furthermore, when adjusting the etching gun in an abnormal state according to the etching speed and etching depth of the two etching guns and the internal stress, it includes:

[0031] Determine whether the etching gun is in an abnormal state according to the relationship between the etching speed of the etching gun and the configured preset etching speed, and the etching depth of the etching gun and the configured preset etching depth:

[0032] When the etching speed is consistent with the preset etching speed and the etching depth is consistent with the preset etching depth, it is determined that the etching gun is not in the abnormal state;

[0033] When the etching speed is inconsistent with the etching speed, and / or the etching depth is inconsistent with the preset etching depth, it is determined that the etching gun is in the abnormal state;

[0034] Obtain the speed ratio between the etching gun in an abnormal state and the etching gun not in an abnormal state, determine the synchronization time of the etching gun in an abnormal state according to the speed ratio, and adjust the etching gun in an abnormal state according to the synchronization time.

[0035] Further, when determining the synchronization time of the etching gun in the abnormal state according to the speed ratio, it includes:

[0036] ;

[0037] where ΔT is the synchronization time of the two etching guns, V normal is the etching speed of the etching gun in the normal state, V abnormal is the etching speed of the etching gun in the abnormal state, and D is the preset etching depth.

[0038] Further, when determining the synchronization time of the etching gun in the abnormal state, it further includes:

[0039] Obtain the average etching depth between the etching gun in the abnormal state and the etching gun in the non - abnormal state, and determine the adjustment coefficient according to the relationship between the average etching depth, the preset etching depth and the internal stress:

[0040] ;

[0041] where K is the adjustment coefficient, D abnormal is the etching depth of the etching gun in the abnormal state, D normal is the etching depth of the etching gun in the normal state, ΔD is the average etching depth, σ is the internal stress, and f is the weight coefficient;

[0042] Adjust the synchronization time according to the adjustment coefficient.

[0043] Compared with the prior art, the beneficial effects of the present invention are as follows: By accurately acquiring and analyzing the synchronous operation data and historical data of two etching guns, any abnormalities during the etching process can be monitored in real time, ensuring the accuracy and consistency of each etching operation. By analyzing the difference values between the synchronous operation data and the data of adjacent time periods, the performance differences or inconsistent operations between the etching guns can be detected in a timely manner, avoiding the problem of uneven etching caused by inconsistent working states of the etching guns. Based on the screening of data outliers using the Gaussian mixture model, noise data can be effectively removed, ensuring the accuracy and reliability of the monitoring results and providing a scientific basis for subsequent adjustments. In addition, by combining the internal stress information of the quartz crystal to precisely adjust the etching gun, the etching process can be further optimized according to the physical properties of the crystal. The stress state of the quartz crystal is one of the key factors affecting its final performance. Reasonably adjusting the working state of the etching gun helps to reduce the internal stress of the crystal and improve its mechanical and electrical properties. Through this method, higher precision control can be achieved during the etching process, reducing the risk of uneven internal stress, thereby significantly improving the quality and consistency of the quartz crystal. Finally, most traditional synchronous control methods rely on manual monitoring and adjustment, which are easily affected by the experience and judgment ability of operators. However, this method uses real-time data analysis and intelligent algorithms to not only improve the precision of synchronous control. The implementation of this high-precision double-sided synchronous etching method can not only improve the quality of quartz crystal processing, but also optimize production efficiency, reduce the scrap rate, and achieve a more reliable and efficient production process.

[0044] On the other hand, the present application also provides a high-precision double-sided synchronous etching system for quartz crystals, including:

[0045] An acquisition module configured to obtain the etching information of the first etching surface and the etching information of the second etching surface during the etching of the quartz crystal, wherein the etching information includes: the synchronous operation data of two etching guns and the synchronous operation data of the etching guns in adjacent time periods;

[0046] An analysis module electrically connected to the acquisition module, the analysis module being configured to obtain a data difference value according to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods; the analysis module is further configured to obtain the historical synchronous operation data of each etching gun, determine a data difference threshold according to the historical synchronous operation data, and screen the data difference value according to the data difference threshold; the analysis module is further configured to obtain screened data outliers based on the Gaussian mixture model, and determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data outliers;

[0047] The central control module is electrically connected to the analysis module, and is configured to adjust the etching gun in an abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0048] It can be understood that the above-mentioned embodiments of the present invention for a high-precision double-sided synchronous etching system and method for quartz crystals have the same beneficial effects, which will not be elaborated here. Description of the Drawings

[0049] By reading the following detailed description of the preferred embodiments, various other advantages and benefits will become clear to those of ordinary skill in the art. The drawings are only for the purpose of showing the preferred embodiments and are not considered as limiting the present invention. Moreover, throughout the drawings, the same reference numerals are used to represent the same components. In the drawings:

[0050] Figure 1 is a flowchart of a high-precision double-sided synchronous etching method for a quartz crystal provided by an embodiment of the present invention;

[0051] Figure 2 is a functional block diagram of a high-precision double-sided synchronous etching system for a quartz crystal provided by an embodiment of the present invention. Detailed Embodiments

[0052] Hereinafter, exemplary embodiments of the present disclosure will be described in more detail with reference to the drawings. Although the exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure can be more thoroughly understood and the scope of the present disclosure can be fully conveyed to those skilled in the art. It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments can be combined with each other. Hereinafter, the present invention will be described in detail with reference to the drawings and in conjunction with the embodiments.

[0053] As Figure 1 shown, in some embodiments of the present application, this embodiment provides a high-precision double-sided synchronous etching method for a quartz crystal, including:

[0054] Step S100, obtaining the etching information of the first etching surface and the etching information of the second etching surface when etching the quartz crystal.

[0055] Specifically, the etching information includes: the synchronous operation data of the two etching guns and the synchronous operation data of the etching guns in adjacent time periods.

[0056] Specifically, the synchronous operation data of the two etching guns is specifically: the etching speed and the etching depth of the two etching guns.

[0057] It can be understood that by obtaining the etching information of the first etching surface and the second etching surface in real time, various parameters in the etching process can be comprehensively monitored, avoiding quality problems caused by excessive differences in the etching surfaces. In particular, the acquisition of synchronous operation data not only covers the working state of the current etching gun but also involves data from adjacent time periods, providing a comprehensive reference basis for subsequent data analysis. Secondly, the core of the etching information is the monitoring and analysis of the synchronous operation data of the two etching guns. The synchronous operation data includes the etching speed and etching depth of the etching gun, and these two key parameters directly affect the etching effect. The etching speed determines the erosion rate of the etching solution on the quartz crystal, while the etching depth reflects the degree to which the crystal surface is etched. By synchronously acquiring these two pieces of data, the system can comprehensively grasp the working conditions of each etching gun, ensure that the two etching guns are consistent during the etching process, and prevent the crystal quality from being unstable due to excessive differences. Finally, the synchronous operation data of adjacent time periods provides an important reference for historical data. By comparing the working parameters of the etching gun in different time periods, it is possible to identify whether there are inconsistent operation phenomena, such as too fast or too slow etching speed, deviation in etching depth, etc. Comparing these data helps to timely detect potential anomalies in the etching process and provide a basis for subsequent adjustments.

[0058] Step S200: Obtain a data difference value according to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods, obtain the historical synchronous operation data of each etching gun, determine a data difference threshold according to the historical synchronous operation data, screen the data difference value according to the data difference threshold, and obtain screened data outliers based on the Gaussian mixture model. Determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data outliers.

[0059] Specifically, when determining the data difference threshold according to the historical synchronous operation data, it includes:

[0060] 。

[0061] Among them, Y represents the difference data threshold, represents the difference mean value of the historical normal synchronous operation data, represents the difference standard deviation of the historical normal synchronous operation data, and k represents an adjustment factor, where:

[0062] 。

[0063] 。

[0064] 。

[0065] Among them, Wt represents the data difference value of the historical normal synchronous operation data, Represents the synchronous operation data at time t, Represents the synchronous operation data at time t - 1, and N represents the number of historical normal synchronous operation data.

[0066] Specifically, when screening the data difference value according to the data difference threshold, it includes: judging the relationship between the data difference value and the data difference threshold, and eliminating small difference data: when the data difference value is greater than the data difference threshold, the synchronous operation data corresponding to the data difference value is retained. When the data difference value is less than or equal to the data difference threshold, the synchronous operation data corresponding to the data difference value is determined as small difference data and eliminated.

[0067] Specifically, when obtaining the data outliers after screening based on the Gaussian mixture model, it includes: calculating the outlier of each screened data based on the Gaussian mixture model:

[0068] .

[0069] Among them, p(x∣Θ) represents the outlier of data x, K is the number of Gaussian components, and π k Represents the mixing coefficient of the kth component, Represents the probability density that data x belongs to a certain Gaussian component.

[0070] Specifically, when determining whether the synchronous operation of the two etching guns is in an abnormal state according to the data outliers, it includes: determining whether the synchronous operation of the two etching guns is in an abnormal state according to the relationship between the data outliers and the pre-configured preset data outliers: when the data outliers are less than or equal to the preset data outliers, it is determined that the synchronous operation of the two etching guns is not in an abnormal state. When the data outliers are greater than the preset data outliers, it is determined that the synchronous operation of the two etching guns is in an abnormal state.

[0071] It is understandable that the data difference value is calculated by obtaining the synchronous operation data and the data of adjacent time periods. By obtaining the synchronous operation data of each etching gun at different time points, the etching speed and etching depth differences between the two etching guns can be understood. These difference values provide the basic data for subsequent analysis and can help determine whether the operations of the two etching guns are consistent. Then, by analyzing the historical synchronous operation data, the data difference threshold is determined, and this threshold is used to screen the difference values. This process can identify which data are the effective data truly reflecting the etching process and which data may be invalid noise. Secondly, when determining the data difference threshold, a reasonable threshold range can be obtained by calculating the difference mean and standard deviation of the historical normal synchronous operation data. Specifically, the difference mean of the historical normal synchronous operation data represents the working state of the etching gun under normal conditions, while the standard deviation reflects the possible fluctuations during the etching process. The introduction of the adjustment factor k further adjusts the data threshold, making the screening of the difference values more flexible and precise. Through these statistical analyses, it can be ensured that the screened data can effectively reflect the real situation of the etching process. Next, the screening of the difference values according to the data difference threshold is a key step in judging whether the data is abnormal. By comparing each data difference value with the difference threshold, significant difference data can be identified. For the data differences greater than the difference threshold, the corresponding synchronous operation data are retained for further in-depth analysis. While for the data less than or equal to the difference threshold, they are considered as minor differences and are excluded. This process effectively removes unnecessary noise data, improves the accuracy of subsequent outlier detection, and ensures that only the significant differences affecting the etching process are concerned. The outlier identification based on the Gaussian mixture model provides an accurate statistical method to judge the abnormality of the data. By inputting the screened data into the Gaussian mixture model, the outlier of each data point can be calculated by this model. The Gaussian mixture model can handle data with multimodal distributions and, through the mixing coefficients and the probability density values of each data point, accurately identify which data points have significant differences from the normal data and thus mark them as outliers. This process can ensure the identification of the real abnormal state under various possible working conditions. Finally, the comparison between the data outliers and the preset threshold is a decisive step in judging whether the synchronous state of the etching gun is abnormal. By comparing the calculated data outliers with the preset abnormal value, it can be accurately judged whether there are problems with the synchronous operation of the etching gun. If the data outliers exceed the preset threshold, it indicates that the synchronous operation of the etching gun is in an abnormal state, otherwise it is considered that the synchronous operation is normal.

[0072] It can be seen that by deeply analyzing the synchronous operation data of the etching guns, the abnormal states during the etching process can be accurately identified. By obtaining the synchronous operation data of the etching guns at each moment and comparing it with the historical normal operation data, any deviations or abnormalities during operation can be effectively captured. The screening of data difference values and the outlier analysis based on the Gaussian mixture model enable the accurate identification of key data points affecting the etching effect from a large amount of data, eliminating noise data, thereby ensuring the accuracy and reliability of data analysis. Secondly, by setting a data difference threshold and combining it with the Gaussian mixture model, the synchronous state of the etching guns can be precisely controlled and monitored. The determination of the data difference threshold takes into account the mean and standard deviation of the historical operation data, making the setting of the threshold highly targeted and flexible. Through this threshold screening mechanism, minor differences can be efficiently eliminated, focusing on the differences that may truly affect the etching quality, thus improving the efficiency and effectiveness of data screening. The introduction of the Gaussian mixture model further enhances the accuracy of outlier identification, ensuring that in a complex etching environment, abnormal states can be automatically and accurately detected. Finally, by comparing the data outliers with the preset threshold, the real-time monitoring and automatic adjustment of the synchronous state of the etching guns are achieved. Through this intelligent judgment mechanism, when the outliers exceed the preset range, an alarm can be issued and adjustments can be made in a timely manner, avoiding the delay and errors of manual intervention. This not only improves the automation level of the etching process but also effectively reduces the quality fluctuations caused by the synchronization errors of the etching guns, ensuring the high-precision processing of quartz crystals and ultimately enhancing the overall production efficiency and product quality.

[0073] Step S300: Adjust the etching gun in an abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0074] Specifically, when adjusting the etching gun in an abnormal state according to the etching speed and depth of the two etching guns and the internal stress, it includes: determining whether the etching gun is in an abnormal state based on the relationship between the etching speed of the etching gun and the preset etching speed configured, and the relationship between the etching depth of the etching gun and the preset etching depth configured: when the etching speed is consistent with the preset etching speed and the etching depth is consistent with the preset etching depth, it is determined that the etching gun is not in the abnormal state. When the etching speed is inconsistent with the etching speed, and / or the etching depth is inconsistent with the preset etching depth, it is determined that the etching gun is in the abnormal state. Obtain the speed ratio between the etching gun in an abnormal state and the etching gun in a non-abnormal state, determine the synchronization time of the etching gun in an abnormal state according to the speed ratio, and adjust the etching gun in an abnormal state according to the synchronization time.

[0075] Specifically, when determining the synchronization time of the etching gun in the abnormal state according to the speed ratio, it includes:

[0076] .

[0077] Wherein, △T is the synchronization time of the two etching guns, V normal is the etching speed of the etching gun in the normal state, V abnormal is the etching speed of the etching gun in the abnormal state, and D is the preset etching depth.

[0078] Specifically, when determining the synchronization time of the etching gun in the abnormal state, it further includes: obtaining the average etching depth between the etching gun in the abnormal state and the etching gun in the non-abnormal state, and determining an adjustment coefficient according to the relationship between the average etching depth, the preset etching depth and the internal stress:

[0079] .

[0080] Wherein, K is the adjustment coefficient, D abnormal is the etching depth of the etching gun in the abnormal state, D normal is the etching depth of the etching gun in the normal state, ΔD is the average etching depth, σ is the internal stress, and f is the weighting coefficient. Adjust the synchronization time according to the adjustment coefficient.

[0081] It is understandable that the working state of the etching gun is judged by comparing the etching speed and etching depth of each etching gun with preset values. When the etching speed and etching depth are consistent with the preset values, it indicates that the etching gun is working normally and there is no abnormal state; while when they are inconsistent, it is considered that the etching gun is in an abnormal state. This mechanism can effectively identify the equipment with problems during operation by real-time monitoring the working parameters of the etching gun. Next, after determining the etching gun in an abnormal state, the adjustment requirement of the synchronization time is further analyzed by calculating the speed ratio between the etching gun in an abnormal state and the etching gun in a normal state. Through the calculation of the speed ratio, the time difference required for the etching gun in an abnormal state and the normal etching gun during synchronization can be accurately obtained. This time difference (ΔT) is the key basis for adjusting the synchronization state of the etching gun, which is used to ensure the synchronization of the two etching guns, thereby avoiding uneven etching effects caused by differences in etching speed. After determining the synchronization time, the adjustment coefficient is further calculated by analyzing the average etching depth between the etching gun in an abnormal state and the etching gun in a normal state, combined with the factor of internal stress. This adjustment coefficient is the result of a comprehensive consideration of multiple factors, including the difference in etching depth (ΔD), the depth difference between the etching gun in an abnormal state and the normal etching gun, and the influence of internal stress. Through the comprehensive analysis of these parameters, a suitable adjustment coefficient can be obtained, which is used to accurately adjust the synchronization time, thereby optimizing the etching process. Based on the calculated adjustment coefficient, the synchronization time of the etching gun in an abnormal state is accurately adjusted. Through this adjustment, the speed and depth of the two etching guns during synchronous operation can be made more consistent, thereby ensuring the uniformity and accuracy of the etching process. This adjustment process ensures the efficient cooperation of the etching guns during operation through refined calculations and adjustments, and avoids etching quality problems caused by poor synchronization.

[0082] It can be seen that by comprehensively analyzing the etching speed and depth of the two etching guns, as well as the differences from the preset values, it is possible to quickly and accurately determine whether a certain etching gun is in an abnormal state. This automated detection and analysis method avoids the inefficiency of manual detection and adjustment, ensuring high precision and high stability in the etching process. Secondly, by calculating the speed ratio between the etching guns, the synchronization time between the abnormal-state etching gun and the normal-state etching gun can be accurately determined. The calculation of this synchronization time provides a scientific basis for etching gun adjustment, thus enabling synchronous adjustment of the etching guns and keeping the two etching guns at the same working rhythm. This precise synchronous adjustment can effectively avoid uneven etching depth caused by inconsistent etching speeds, ensuring the consistency of the quartz crystal surface. In addition, the combined analysis of the average etching depth and internal stress further optimizes the adjustment process of the etching guns. By comprehensively considering the etching depth and internal stress, the synchronization time can be dynamically adjusted according to the actual working conditions, fully taking into account the working characteristics of different etching guns and the material properties of the quartz crystal. This adjustment mechanism based on physical factors makes the etching process more in line with actual requirements and improves the stability of the etching effect. Furthermore, the optimization of the synchronization time according to the adjustment coefficient, by making fine adjustments on the basis of the synchronization time, ensures the refined management of the etching process. The introduction of the adjustment coefficient provides higher adaptability and flexibility for the etching process, enabling flexible adjustment of the etching time under different conditions and making the etching effect reach the best state under various working conditions. Finally, since it can automatically identify and adjust the working state of the etching guns, the need for manual intervention is reduced, and the workload of the operators is decreased. At the same time, the precise synchronous adjustment avoids waste and errors caused by etching gun mismatch, thereby improving the product consistency and the yield rate.

[0083] In the above embodiments, by accurately acquiring and analyzing the synchronous operation data and historical data of the two etching guns, any abnormalities during the etching process can be monitored in real time, ensuring the accuracy and consistency of each etching operation. By analyzing the difference values between the synchronous operation data and the data of adjacent time periods, the performance differences or inconsistent operations between the etching guns can be detected in a timely manner, avoiding the problem of uneven etching caused by inconsistent working states of the etching guns. Based on the screening of data outliers by the Gaussian mixture model, noise data can be effectively removed, ensuring the accuracy and reliability of the monitoring results and providing a scientific basis for subsequent adjustments. In addition, by combining the internal stress information of the quartz crystal to precisely adjust the etching gun, the etching process can be further optimized according to the physical properties of the crystal. The stress state of the quartz crystal is one of the key factors affecting its final performance. Reasonably adjusting the working state of the etching gun helps to reduce the internal stress of the crystal and improve its mechanical and electrical properties. Through this method, higher precision control can be achieved during the etching process, reducing the risk of uneven internal stress, thereby significantly improving the quality and consistency of the quartz crystal. Finally, most traditional synchronous control methods rely on manual monitoring and adjustment, which are easily affected by the experience and judgment ability of operators. However, this method not only improves the precision of synchronous control through real-time data analysis and intelligent algorithms. The implementation of this high-precision double-sided synchronous etching method can not only improve the quality of quartz crystal processing, but also optimize production efficiency, reduce the scrap rate, and achieve a more reliable and efficient production process.

[0084] In another preferred embodiment based on the above embodiments, as Figure 2 shown, this embodiment provides a high-precision double-sided synchronous etching system for quartz crystals, including: a collection module, an analysis module, and a central control module.

[0085] Specifically, the collection module is configured to obtain the etching information of the first etching surface and the etching information of the second etching surface when etching the quartz crystal. Among them, the etching information includes: the synchronous operation data of the two etching guns and the synchronous operation data of the etching guns in adjacent time periods. The analysis module is electrically connected to the collection module, and the analysis module is configured to obtain a data difference value according to the synchronous operation data of the etching guns and the synchronous operation data of the etching guns in adjacent time periods. The analysis module is further configured to obtain the historical synchronous operation data of each etching gun, determine a data difference threshold according to the historical synchronous operation data, and screen the data difference value according to the data difference threshold. The analysis module is further configured to obtain the screened data outliers based on the Gaussian mixture model, and determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data outliers. The central control module is electrically connected to the analysis module, and the central control module is configured to adjust the etching gun in an abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

[0086] It is understandable that a high-precision double-sided synchronous etching system and method for quartz crystals in the above embodiments of the present invention have the same beneficial effects, which will not be elaborated herein.

[0087] Those skilled in the art should understand that the embodiments of the present application can be provided as methods, systems, or computer program products. Therefore, the present application can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0088] The present application is described with reference to the flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram can be implemented by computer program instructions, and the combination of the flows and / or blocks in the flowchart and / or block diagram can also be implemented. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing devices generate means for implementing the functions specified in one Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0089] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, so that the instructions stored in the computer-readable memory generate a manufactured article including instruction means, and the instruction means implement the functions specified in one Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0090] These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process, and thus the instructions executed on the computer or other programmable device provide steps for implementing the functions specified in one Figure 1 one flow or multiple flows and / or blocks Figure 1 one block or multiple blocks.

[0091] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: it is still possible to modify the specific implementation manners of the present invention or make equivalent replacements, and any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the protection scope of the claims of the present invention.

Claims

1. A high-precision double-sided synchronous etching method for quartz crystal, characterized in that: include: Acquire etching information of a first etching surface and etching information of a second etching surface when etching a quartz crystal, wherein the etching information includes: synchronous operation data of two etching guns and synchronous operation data of the etching guns in adjacent time periods; According to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods, a data difference value is obtained, and the historical synchronous operation data of each etching gun is obtained. According to the historical synchronous operation data, a data difference threshold is determined, and the data difference value is filtered according to the data difference threshold, and a filtered data abnormal value is obtained based on a Gaussian mixture model, and according to the data abnormal value, it is determined whether the synchronous operation of the two etching guns is in an abnormal state; Adjusting the etching gun in abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal; It is characterized in that, when determining the data difference threshold according to the historical synchronization operation data, it includes: ; Among them, Y represents the difference data threshold, Indicates the difference mean of historical normal synchronous operation data, represents the standard deviation of the historical normal synchronous operation data, and k represents the adjustment factor, where: ; ; ; Where Wt represents the data difference value of historical normal synchronous operation data, Represents the synchronous operation data at time t, represents the synchronous operation data at time t-1, and N represents the number of historical normal synchronous operation data.

2. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 1, characterized in that: When the data difference value is screened according to the data difference threshold, it includes: The relationship between the data difference value and the data difference threshold is used to eliminate small difference data: When the data difference value is greater than the data difference threshold, the synchronous operation data corresponding to the data difference value is retained; When the data difference value is less than or equal to the data difference threshold, the synchronous operation data corresponding to the data difference value is determined as small difference data and is eliminated.

3. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 2, characterized in that: When obtaining outliers from filtered data based on a Gaussian mixture model, it includes: Calculate the outlier value of each filtered data based on the Gaussian mixture model: ; Among them, p(x|Θ) represents the outlier value of data x, K is the number of Gaussian components, π k Expressed as the mixing coefficient of the kth component, It is expressed as the probability density of data x belonging to a certain Gaussian component.

4. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 1, characterized in that: Determining whether the synchronous operation of the two etching guns is in an abnormal state according to the abnormal data value includes: According to the relationship between the data abnormal value and the pre-configured preset data abnormal value, it is determined whether the synchronous operation of the two etching guns is in an abnormal state: When the data abnormal value is less than or equal to the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is not in an abnormal state; When the data abnormal value is greater than the preset data abnormal value, it is determined that the synchronous operation of the two etching guns is in an abnormal state.

5. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 1, characterized in that: The synchronous operation data of the two etching guns specifically include: etching speed and etching depth of the two etching guns.

6. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 5, characterized in that: When adjusting the etching gun in an abnormal state according to the etching speed, etching depth and internal stress of the two etching guns, it includes: Determine whether the etching gun is in an abnormal state according to the relationship between the etching speed of the etching gun and the configured preset etching speed, and the etching depth of the etching gun and the configured preset etching depth: When the etching speed is consistent with the preset etching speed, and the etching depth is consistent with the preset etching depth, it is determined that the etching gun is not in the abnormal state; When the etching speed is inconsistent with the etching speed, and / or the etching depth is inconsistent with the preset etching depth, determining that the etching gun is in the abnormal state; The speed ratio between the etching gun in the abnormal state and the etching gun in the normal state is obtained, the synchronization time of the etching gun in the abnormal state is determined according to the speed ratio, and the etching gun in the abnormal state is adjusted according to the synchronization time.

7. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 6, characterized in that: Determining the synchronization time of the etching gun in an abnormal state according to the speed ratio includes: ; Wherein, △T is the synchronization time of the two etching guns, V normal is the etching speed of the etching gun in normal state, V abnormal is the etching speed of the etching gun in an abnormal state, and D is the preset etching depth.

8. The high-precision double-sided simultaneous etching method for quartz crystal according to claim 7, characterized in that: When determining the synchronization time of the etching gun in an abnormal state, it also includes: The average etching depth between the etching gun in the abnormal state and the etching gun in the non-abnormal state is obtained, and the adjustment coefficient is determined according to the relationship between the average etching depth, the preset etching depth and the internal stress: ; Wherein, K is the adjustment coefficient, D abnormal is the etching depth of the etching gun in abnormal state, D normal is the etching depth of the etching gun in normal state, ΔD is the mean value of the etching depth, σ is the internal stress, and f is the weight coefficient; The synchronization time is adjusted according to the adjustment coefficient.

9. A high-precision double-sided synchronous etching system for quartz crystal, applicable to a high-precision double-sided synchronous etching method for quartz crystal as claimed in any one of claims 1 to 8, characterized in that: include: A collection module is configured to obtain etching information of a first etching surface and etching information of a second etching surface when etching the quartz crystal, wherein the etching information includes: synchronous operation data of two etching guns and synchronous operation data of the etching guns in adjacent time periods; An analysis module is electrically connected to the acquisition module, and the analysis module is configured to obtain a data difference value according to the synchronous operation data of the etching gun and the synchronous operation data of the etching gun in adjacent time periods; the analysis module is also configured to obtain the historical synchronous operation data of each etching gun, determine the data difference threshold according to the historical synchronous operation data, and filter the data difference value according to the data difference threshold; the analysis module is also configured to obtain the filtered data abnormal value based on the Gaussian mixture model, and determine whether the synchronous operation of the two etching guns is in an abnormal state according to the data abnormal value; The central control module is electrically connected to the analysis module, and is configured to adjust the etching gun in an abnormal state according to the synchronous operation data of the two etching guns and the internal stress of the quartz crystal.

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