A plasma atomic layer deposition device
By using plasma gas generation components in plasma atomic layer deposition equipment to generate highly active plasma gas, the problem of deposition of existing ALD equipment at high temperatures is solved, and the effect of generating high-quality films at lower temperatures is achieved.
Patent Information
- Application Number
- CN202411916640.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-24
- Publication Date
- 2025-04-08
AI Technical Summary
Existing thermal ALD equipment requires a higher preparation temperature when preparing certain metals, sulfides, and nitrides, resulting in increased equipment energy consumption, reduced O-ring life, and may lead to deformation and performance of substrate materials.
A plasma atomic layer deposition device is designed to use the reaction gas to generate highly active plasma gas through plasma gas generation components, and chemically react with the reaction reagent at a lower temperature to form a high-quality film.
The device can perform film deposition at lower temperatures to avoid the adverse effects of high temperature on the substrate. The resulting film has better uniformity, density and lower impurity content, and is suitable for high-end applications such as the manufacturing of advanced semiconductor devices.
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Figure CN119776800A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of atomic layer deposition, and in particular to a plasma atomic layer deposition device. Background Art
[0002] Atomic layer deposition (ALD) is also called atomic layer epitaxy (ALE) or atomic layer chemical vapor deposition (ALCVD). Atomic layer deposition was first proposed by Finnish scientists in 1974. It has the advantages of sequential deposition of single atomic layers, extremely uniform thickness of the deposited layer, and high three-dimensional conformality. It has become a key link in the development of advanced semiconductor process technology.
[0003] In the atomic layer deposition process, the chemical reaction of the new atomic layer is directly related to the previous layer. Atomic layer deposition forms a deposited film by alternately passing two or more gas-phase precursor sources into the reactor and performing chemical adsorption reactions on the surface of the deposition substrate, using chemical bonds to alternately adsorb substances A and B to achieve surface reaction growth. Atomic layer deposition has the characteristics of self-limitation, that is, in each pulse cycle, the gas-phase precursor can only react at the atomic bonding sites on the surface of the deposition substrate, and just cover the substrate surface with a saturated amount, and can repeat atomic layer growth in a very wide process window.
[0004] At present, ordinary thermal ALD equipment requires a relatively high preparation temperature (above 350°C) when preparing certain metals, sulfides, and nitrides. This temperature will increase the energy consumption of the equipment and reduce the life of the high-temperature O-ring. At the same time, some temperature-sensitive substrate materials may experience substrate deformation, performance degradation and other problems. Summary of the invention
[0005] In view of this, the present invention provides a plasma atomic layer deposition device.
[0006] Specifically, the present invention is achieved through the following technical solutions:
[0007] According to a first aspect of the present invention, there is provided a plasma atomic layer deposition apparatus, comprising:
[0008] A reaction gas input component, used for inputting reaction gas;
[0009] A reaction reagent input component, used for inputting reaction reagents;
[0010] A plasma gas generating component, used to generate plasma gas using the reaction gas; the plasma gas generating component is connected to the reaction gas input component;
[0011] A reaction component, used to provide a reaction space; the reaction component is respectively connected to the reaction reagent input component and the plasma gas generation component;
[0012] An extraction component is used to extract impurities in the reaction component; the extraction component is connected to the reaction component.
[0013] Optionally, the reaction gas input component includes: a first pipeline, and a gas outlet of the first pipeline is connected to the plasma gas generating component.
[0014] Optionally, the reaction gas input assembly further includes: a first regulating valve, wherein the first regulating valve is disposed on the first pipeline.
[0015] Optionally, the reaction reagent input component includes: a precursor source bottle and a second pipe, wherein the outlet of the precursor source bottle is connected to the second pipe, and the gas outlet of the second pipe is connected to the reaction component.
[0016] Optionally, the reaction reagent input component further includes: a second regulating valve, and the second regulating valve is arranged on the second pipeline.
[0017] Optionally, the plasma gas generating component includes: a plasma generator, a radio frequency generator and a radio frequency coil, wherein two ends of the plasma generator are respectively connected to the gas outlet of the first pipeline in the reaction gas input component and the reaction component, the radio frequency coil is wound around the outer wall of the plasma generator, and the radio frequency generator is connected to the radio frequency coil.
[0018] Optionally, the reaction component includes: a reaction chamber, and the reaction chamber is respectively connected to the gas outlet of the second pipeline in the reaction reagent input component and the plasma generator in the plasma gas generation component.
[0019] Optionally, the reaction assembly further comprises: a heating plate, wherein the heating plate is arranged on the inner wall of the bottom end of the reaction chamber.
[0020] Optionally, the extraction component includes: an air pump, and the air pump is connected to the reaction chamber in the reaction component.
[0021] Optionally, the extraction component further comprises: a switch valve, wherein the switch valve is arranged on a connecting pipe between the vacuum pump and the reaction chamber.
[0022] The technical solution provided by the present invention brings at least the following beneficial effects:
[0023] The plasma atomic layer deposition equipment provided in the present application can perform thin film deposition at a relatively low temperature, thereby avoiding the influence of high temperature on substrate performance and preventing deformation or performance degradation of the substrate; the highly active substances in the plasma can make the precursor react more fully, and the generated thin film has better uniformity, density and lower impurity content, reducing defects in the thin film, thereby improving the quality and performance of the thin film, and is suitable for high-end applications with strict requirements on film quality, such as the manufacture of advanced semiconductor devices; it can realize the preparation of some materials that are difficult to deposit by thermal ALD, such as certain metals, low-temperature oxides, nitrides, sulfides, fluorides, etc., expanding the range of depositable materials and meeting the needs of different fields for thin films of various materials; and plasma can accelerate chemical reactions, shorten the deposition cycle, and improve the efficiency of thin film deposition, which helps to increase production capacity and reduce production costs in large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.
[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.
[0026] Figure 1 A schematic structural diagram of a plasma atomic layer deposition device provided in an embodiment of the present invention. DETAILED DESCRIPTION
[0027] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0028] Figure 1 A plasma atomic layer deposition device suitable for an embodiment of the present invention is schematically shown.
[0029] Reference Figure 1 As shown, the present application provides a plasma atomic layer deposition device, comprising:
[0030] A reaction gas input assembly 10, used for inputting reaction gas;
[0031] A reaction reagent input component 20, used for inputting reaction reagents;
[0032] A plasma gas generating assembly 30 is used to generate plasma gas using the reaction gas; the plasma gas generating assembly 30 is connected to the reaction gas input assembly 10;
[0033] The reaction component 40 is used to provide a reaction space; the reaction component 40 is connected to the reaction reagent input component 20 and the plasma gas generation component 30 respectively;
[0034] The extraction component 50 is used to extract impurities in the reaction component 40 ; the extraction component 50 is connected to the reaction component 40 .
[0035] In the embodiment of the present application, the sample to be coated is placed in the reaction component 40, the reaction gas is input into the plasma gas generating component 30 through the reaction gas input component 10, the plasma gas generating component 30 uses the reaction gas to generate plasma gas, the reaction reagent is input into the reaction component 40 through the reaction reagent input component 20, the reaction reagent, the plasma gas and the sample react in the reaction component 40, and the extraction component 50 can extract the impurities (such as unreacted gas) in the reaction component 40 from the reaction component 40. The following is a detailed analysis of the plasma atomic layer deposition device involved in the embodiment of the present application:
[0036] Reaction gas input assembly: used to input the gases involved in the reaction into the device. These gases are activated in the plasma gas generation assembly to form plasma gas.
[0037] Reaction reagent input component: used to input reaction reagents, which react chemically with plasma gas in the reaction component to form the desired film.
[0038] Plasma gas generation component: Generates plasma gas using reactive gas. Plasma gas has higher reactivity and can promote chemical reactions at lower temperatures. Connection: Connects to the reactive gas input component to receive reactive gas and perform plasma treatment.
[0039] Reaction component: provides reaction space and is the main place for thin film deposition. In the reaction component, the reaction reagent reacts chemically with the plasma gas to form a thin film. Connection: connected to the reaction reagent input component and the plasma gas generation component respectively to receive the reaction reagent and plasma gas.
[0040] Extraction assembly: used to extract impurities from the reaction assembly, such as unreacted reagents, reaction by-products, etc. This helps keep the reaction space clean and improves the quality of the film. Connection: connected to the reaction assembly to extract impurities from the reaction space.
[0041] Low temperature deposition: This equipment can deposit thin films at lower temperatures, avoiding the impact of high temperature on substrate performance and preventing deformation or performance degradation of the substrate. Film quality: The resulting film has better uniformity and density, lower impurity content and fewer defects. This is due to the high reactivity of the plasma gas and the effective removal of impurities by the extraction component. Performance improvement: By optimizing reaction conditions and reducing impurity content, this equipment can significantly improve the quality and performance of the film to meet the needs of various application scenarios.
[0042] This equipment can be widely used in fields requiring high-quality thin films, such as microelectronics, optoelectronics, biomedicine, energy, etc. In particular, this equipment has significant advantages in applications that are sensitive to substrate temperature or require thin films to have excellent properties.
[0043] In summary, the plasma atomic layer deposition device in the embodiment of the present application achieves high-quality thin film deposition at a relatively low temperature by introducing a plasma gas generating component and an extraction component. The device has a wide range of application prospects and significant technical advantages, and provides a new solution for the field of thin film preparation.
[0044] Exemplarily, the reaction gas input assembly 10 includes: a first pipeline 11 , a gas outlet of the first pipeline 11 is connected to the plasma gas generating assembly 30 .
[0045] In the embodiment of the present application, the reaction gas is input into the plasma gas generating assembly 30 via the first pipe 11 .
[0046] Exemplarily, the reaction gas input assembly 10 further includes: a first regulating valve 12 , wherein the first regulating valve 12 is disposed on the first pipeline 11 .
[0047] In the embodiment of the present application, the first regulating valve 12 is used to adjust the flow rate of the gas input into the first pipeline 11 .
[0048] Exemplarily, the reaction reagent input component 20 includes: a precursor source bottle 21 and a second pipe 22 , wherein the outlet of the precursor source bottle 21 is connected to the second pipe 22 , and the gas outlet of the second pipe 22 is connected to the reaction component 40 .
[0049] In the embodiment of the present application, the second pipe 22 is connected to external chlorine gas, and the precursor source bottle 21 is filled with reaction reagents, and the reaction reagents are brought into the reaction component 40 by the chlorine gas.
[0050] Exemplarily, the reaction reagent input component 20 further includes: a second regulating valve 23 , and the second regulating valve 23 is disposed on the second pipeline 22 .
[0051] In the embodiment of the present application, the second regulating valve 23 is used to adjust the flow rate of the gas containing the reaction reagent input into the second pipeline 22 .
[0052] Exemplarily, the plasma gas generating component 30 includes: a plasma generator 31, a radio frequency generator 32 and a radio frequency coil 33, wherein two ends of the plasma generator 31 are respectively connected to the gas outlet of the first pipe 11 in the reaction gas input component 10 and the reaction component 40, the radio frequency coil 33 is wound around the outer wall of the plasma generator 31, and the radio frequency generator 32 is connected to the radio frequency coil 33.
[0053] In the embodiment of the present application, the RF generator 32 generates current, and the current generates an electric field in the space around the plasma generator 31 via the RF coil 33. The electric field acts on the gas input into the first pipeline 11, thereby generating plasma gas.
[0054] Exemplarily, the reaction component 40 includes: a reaction chamber 41 , and the reaction chamber 41 is respectively connected to the gas outlet of the second pipeline 22 in the reaction reagent input component 20 and the plasma generator 31 in the plasma gas generation component 30 .
[0055] In the embodiment of the present application, the reaction chamber 41 is used to provide plasma gas and reaction reagents for reaction.
[0056] Exemplarily, the reaction assembly 40 further includes: a heating plate 42 , and the heating plate 42 is disposed on the inner wall of the bottom end of the reaction chamber 41 .
[0057] In the embodiment of the present application, the heating plate 42 is used to carry the sample and heat the sample.
[0058] Exemplarily, the extraction component 50 includes: an air pump 51 , and the air pump 51 is connected to the reaction chamber 41 in the reaction component 40 .
[0059] In the embodiment of the present application, the vacuum pump 51 is used to extract unreacted gas and impurities in the reaction chamber 41 .
[0060] Exemplarily, the extraction component 50 further includes: a switch valve 52 , and the switch valve 52 is disposed on a connecting pipe between the vacuum pump 51 and the reaction chamber 41 .
[0061] In the embodiment of the present application, the switch valve 52 is used to open or disconnect the connecting pipeline between the vacuum pump 51 and the reaction chamber 41 .
[0062] In the embodiment of the present application, the sample to be coated is placed above the heating plate 42, and the heating plate 42 is set to the corresponding experimental temperature through program control. There is also an auxiliary heating wire of the cavity inside the reaction chamber 41, and the heating temperature is also controlled by the program. Before the experiment, the reaction reagents required to participate are placed in the precursor source bottle 21, and the flow rate of the inert gas passing through the second pipe 22 is controlled by controlling the flow rate of the second regulating valve 23. The inert gas simultaneously brings the reaction reagents into the reaction chamber 41. Similarly, the gas required to participate in the reaction enters the plasma generator 31 from the first pipe 11, and the size of its entry flow rate is controlled by the second regulating valve 23. When the gas passes through the radio frequency coil 33 of the plasma generator 31, due to the alternating electric field, the gas is ionized into a plasma state. At this time, the plasma gas and the reaction reagents that have been introduced into the reaction chamber 41 react chemically on the surface of the film to form a thin film, and the excess precursor source and by-products are sucked out of the cavity by the vacuum pump 51 through the hole below the reaction chamber 41. The outer shell and pipeline of the plasma generation area are made of stainless steel, and the RF coil 33 is made of metal copper or aluminum. The switch valve 52 is the front valve of the vacuum pump 51. When the vacuum pump 51 starts to run, the opening of the switch valve 52 is controlled by the program, and the reaction chamber 41 can start to evacuate. The first pipeline 11, the second pipeline 22 and the outside of the plasma generator 31 cavity are wrapped with heating belts, and the temperature is also controlled by the program to prevent the precursor source from condensing in the pipeline. The RF coil 33 is connected to the RF generator 32, and the input power can be adjusted on the RF generator 32 to control the intensity of the RF signal and the energy size.
[0063] The following is a further analysis and supplement of the plasma atomic layer deposition device involved in the embodiments of the present application:
[0064] 1. Plasma atomic layer deposition equipment structure
[0065] Reaction gas input assembly 10
[0066] The first pipeline 11 is used to transport the reaction gas to the plasma gas generating assembly 30. Its gas outlet is connected to the plasma gas generating assembly 30. The first regulating valve 12 is arranged on the first pipeline 11, and is used to accurately adjust the flow rate of the reaction gas to ensure the stability of the plasma gas generating process.
[0067] Reagent input assembly 20
[0068] Precursor source bottle 21: used to store reaction reagents. The reaction reagents, carried by inert gas (such as chlorine), enter the reaction assembly 40 through the second pipe 22. The second pipe 22: connects the precursor source bottle 21 and the reaction assembly 40, and is used to transport the inert gas with the reaction reagents. The second regulating valve 23: is set on the second pipe 22, and is used to adjust the flow of the inert gas with the reaction reagents to ensure the uniform distribution of the reaction reagents in the reaction assembly 40.
[0069] Plasma gas generating assembly 30
[0070] Plasma generator 31: It is the core component for generating plasma gas. Its two ends are respectively connected to the reaction gas input component 10 and the reaction component 40 to ensure that the reaction gas is ionized into plasma gas in the plasma generator 31. RF generator 32: It generates an alternating current and generates an electric field around the plasma generator 31 through the RF coil 33, thereby ionizing the reaction gas. RF coil 33: It is wound around the outer wall of the plasma generator 31 and connected to the RF generator 32 to generate the electric field required for ionization.
[0071] React Components 40
[0072] Reaction chamber 41: It is the main place for thin film deposition. Its internal space is for plasma gas and reaction reagent to react chemically to generate the desired thin film. Reaction chamber 41 is connected to reaction reagent input assembly 20 and plasma gas generation assembly 30 respectively. Heating plate 42: It is arranged on the inner wall of the bottom end of reaction chamber 41, used to carry samples and heat the samples to promote the chemical reaction.
[0073] Extraction component 50
[0074] The vacuum pump 51 is connected to the reaction chamber 41 of the reaction assembly 40 and is used to extract unreacted gas and impurities to keep the reaction chamber clean. The switch valve 52 is arranged on the connecting pipe between the vacuum pump 51 and the reaction chamber 41 and is used to control the start and end of the vacuum process.
[0075] 2. Working principle and operation process
[0076] Place the sample to be coated on top of the heating plate 42, and set the heating temperature of the heating plate 42 and the reaction chamber 41 through the program. Load the reaction reagent into the precursor source bottle 21, adjust the flow of the inert gas through the second regulating valve 23, and bring the reaction reagent into the reaction chamber 41. At the same time, the reaction gas enters the plasma generator 31 through the first pipeline 11 and the first regulating valve 12. The RF generator 32 generates an alternating current, and generates an electric field around the plasma generator 31 through the RF coil 33, ionizing the reaction gas to generate plasma gas. The plasma gas and the reaction reagent react chemically in the reaction chamber 41 to generate the desired film. The excess precursor source and by-products are pumped out of the chamber through the holes below the reaction chamber 41 by the vacuum pump 51. The opening and closing of the switch valve 52 is controlled by the program to control the progress of the vacuum process.
[0077] 3. Equipment features and advantages
[0078] Low temperature deposition: The high reactivity of plasma gas enables thin film deposition at lower temperatures. Film quality: The resulting film has excellent uniformity, density and low impurity content. Flexibility: The deposition rate and properties of the film can be precisely controlled by adjusting the flow of reactive gases and reagents, as well as the heating temperature and the intensity of the RF signal. Efficiency: The equipment has a compact structure and a simple operation process, which improves the efficiency and reliability of thin film deposition.
[0079] In summary, the plasma atomic layer deposition device in the embodiment of the present application has significant technical advantages and broad application prospects, and provides a new solution for the preparation of high-quality thin films. The plasma atomic layer deposition device provided in the present application can deposit thin films at a lower temperature, avoid the influence of high temperature on the performance of the substrate, and prevent the deformation or performance degradation of the substrate; the highly active substances in the plasma can make the precursor react more fully, and the generated thin film has better uniformity, density and lower impurity content, reducing defects in the film, thereby improving the quality and performance of the film, and is suitable for high-end applications with strict requirements on film quality, such as the manufacture of advanced semiconductor devices; it can realize the preparation of some materials that are difficult to deposit by thermal ALD, such as certain metals, low-temperature oxides, nitrides, sulfides, fluorides, etc., expanding the range of depositable materials and meeting the needs of different fields for thin films of various materials; and plasma can accelerate chemical reactions, shorten the deposition cycle, and improve the efficiency of thin film deposition, which helps to increase production capacity and reduce production costs in large-scale production.
[0080] It should be noted that, in the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.
[0081] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.
[0082] In addition, the terms "installed", "set", "provided with", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0083] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.
[0084] The foregoing is merely a specific embodiment of the present invention, which enables those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features claimed herein.
Claims
1. A plasma atomic layer deposition device, characterized in that: include: A reaction gas input component, used for inputting reaction gas; A reaction reagent input component, used for inputting reaction reagents; A plasma gas generating component, used to generate plasma gas using the reaction gas; the plasma gas generating component is connected to the reaction gas input component; A reaction component, used to provide a reaction space; the reaction component is respectively connected to the reaction reagent input component and the plasma gas generation component; An extraction component is used to extract impurities in the reaction component; the extraction component is connected to the reaction component.
2. The plasma atomic layer deposition device according to claim 1, characterized in that: The reaction gas input component includes: a first pipeline, and a gas outlet of the first pipeline is connected to the plasma gas generation component.
3. The plasma atomic layer deposition device according to claim 2, characterized in that: The reaction gas input assembly further includes: a first regulating valve, and the first regulating valve is arranged on the first pipeline.
4. The plasma atomic layer deposition device according to claim 1, characterized in that: The reaction reagent input component includes: a precursor source bottle and a second pipe, wherein the outlet of the precursor source bottle is connected to the second pipe, and the gas outlet of the second pipe is connected to the reaction component.
5. The plasma atomic layer deposition device according to claim 4, characterized in that: The reaction reagent input component also includes: a second regulating valve, and the second regulating valve is arranged on the second pipeline.
6. The plasma atomic layer deposition device according to claim 1, characterized in that: The plasma gas generating component comprises: a plasma generator, a radio frequency generator and a radio frequency coil, wherein two ends of the plasma generator are respectively connected to the gas outlet of the first pipeline in the reaction gas input component and the reaction component, the radio frequency coil is wound around the outer wall of the plasma generator, and the radio frequency generator is connected to the radio frequency coil.
7. The plasma atomic layer deposition device according to claim 1, characterized in that: The reaction component comprises: a reaction chamber, and the reaction chamber is respectively connected to the gas outlet of the second pipeline in the reaction reagent input component and the plasma generator in the plasma gas generation component.
8. The plasma atomic layer deposition device according to claim 7, characterized in that: The reaction assembly further includes a heating plate, which is arranged on the inner wall of the bottom end of the reaction chamber.
9. The plasma atomic layer deposition device according to claim 1, characterized in that: The extraction component includes: an air pump, and the air pump is connected to the reaction chamber in the reaction component.
10. The plasma atomic layer deposition device according to claim 9, characterized in that: The extraction component further includes: a switch valve, which is arranged on a connecting pipe between the air pump and the reaction chamber.