Wafer temperature processing method, electroplating equipment and computer readable storage medium

Abstract

The invention relates to the technical field of semiconductors, and discloses a wafer temperature processing method, electroplating equipment and a computer readable storage medium. The wafer temperature processing method is applied to the electroplating equipment, the electroplating equipment at least comprises a clamp used for clamping and fixing a wafer, and the wafer temperature processing method comprises the steps that after the clamp drives the wafer to rise from electroplating liquid, a detection result is obtained, and the detection result is used for determining whether the wafer needs to be cooled or not; and if the detection result is yes, cooling the wafer after the clamp drives the wafer to rise from the electroplating liquid. According to the temperature processing method of the wafer, the problems that the wafer is broken and the sealing ring is pulled away from the base when the wafer is taken down from the clamp can be avoided, and the process time of the whole electroplating process cannot be additionally increased.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a wafer temperature processing method, electroplating equipment and a computer-readable storage medium. Background Art

[0002] Advanced packaging technology involves electroplating of wafers. Before electroplating, photoresist needs to be coated on one side of the wafer, and then the characteristic shape to be electroplated is etched on the photoresist through exposure, development and other processes. The characteristic shape will be filled after electroplating. During the electroplating process, only the side of the wafer with the characteristic shape can contact the electroplating solution, otherwise the wafer will be corroded by the electroplating solution and damaged, and the electroplating equipment will also be contaminated, affecting production efficiency.

[0003] The side of the wafer coated with photoresist is the front side of the wafer, and the side not coated with photoresist is the back side of the wafer. In order to prevent the plating solution from corroding the back side of the wafer, the electroplating process of the wafer often uses an electroplating fixture to clamp the wafer. The electroplating fixture includes a base and a pressure plate. The base is annular and a sealing ring is arranged on the upper side. The front side of the wafer is arranged downward and the edge overlaps the sealing ring. The pressure plate presses the wafer on the sealing ring from top to bottom.

[0004] The general process of wafer electroplating is as follows: (1) placing the fixture holding the wafer into the plating solution to electroplate the wafer; (2) lifting the electroplating fixture holding the wafer from the plating solution and performing post-processing steps such as spinning, cleaning, and drying; (3) opening the fixture and removing the electroplated wafer from the fixture using a robot.

[0005] In the prior art, when the temperature of the electroplating solution is high, such as 60 degrees, the photoresist and the wafer are heated, which increases the viscosity of the photoresist, resulting in excessive adhesion between the sealing ring, the photoresist and the wafer. After the electroplating process is completed, when the wafer is removed from the fixture by the robot, the robot needs to apply a greater vacuum suction force, and problems such as wafer fragments and the sealing ring being pulled off the base often occur, which affects production capacity and manufacturing costs, and also increases the maintenance cost of the electroplating fixture. Summary of the invention

[0006] The first purpose of the present invention is to propose a temperature treatment method for a wafer, which can not only avoid the problem of wafer fragments and the sealing ring being pulled off the base when the wafer is removed from the fixture, but also will not increase the process time of the entire electroplating process.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] A wafer temperature treatment method is applied to an electroplating device, wherein the electroplating device at least includes a fixture for clamping and fixing the wafer, and the wafer temperature treatment method includes:

[0009] After the fixture drives the wafer to rise from the electroplating solution, a detection result is obtained, and the detection result is used to determine whether the wafer needs to be cooled;

[0010] If the detection result is yes, the wafer is cooled down after the fixture drives the wafer to rise from the electroplating solution.

[0011] As an optional solution, the fixture includes a sealing ring for sealing the wafer, and the sealing ring is used to seal the wafer after the wafer is placed in the fixture so that the fixture can carry the wafer and immerse it in the electroplating solution;

[0012] After the fixture drives the wafer to rise from the electroplating solution, the detection results are obtained, including:

[0013] The degree of adhesion between the wafer and the sealing ring is detected to determine the difficulty of the robot to remove the wafer from the clamp after the clamp is opened. If the difficulty reaches a preset standard, a detection result indicating that the wafer needs to be cooled is generated.

[0014] As an optional solution, the clamp further includes a base, a pressure plate, and a temperature measuring component disposed on the base or the pressure plate, wherein the temperature measuring component is used to detect the temperature of the front side and / or the back side of the wafer;

[0015] After the fixture drives the wafer to rise from the electroplating solution, the detection results are obtained, including:

[0016] The temperature of the wafer detected by the temperature measuring component is obtained, and when the temperature of the wafer reaches a target temperature value, a detection result indicating that the wafer needs to be cooled is generated.

[0017] As an optional solution, after the fixture drives the wafer to rise from the electroplating solution, the wafer is cooled down. Thereafter, the temperature treatment method of the wafer further includes:

[0018] Executing a preset first process, wherein the first process includes the step of spinning the fixture to recover the electroplating solution;

[0019] When executing the first process, it is detected whether the temperature of the wafer is reduced to the target temperature, and if so, the temperature reduction is terminated.

[0020] As an optional solution, when performing the first process, when it is detected that the temperature of the wafer has not dropped to the target temperature, the method further includes:

[0021] Performing a preset second process, wherein the second process includes a step of cleaning the fixture and the wafer;

[0022] When executing the second process, it is detected whether the temperature of the wafer is reduced to the target temperature; if so, the cooling is terminated.

[0023] As an optional solution, when performing the second process, when it is detected that the temperature of the wafer has not dropped to the target temperature, the method further includes:

[0024] Executing a preset third process, wherein the third process includes a step of drying the fixture and the wafer;

[0025] When executing the third process, detecting whether the temperature of the wafer drops to a target temperature;

[0026] If yes, then the cooling process ends.

[0027] As an optional solution, when performing the third process, when it is detected that the temperature of the wafer has not dropped to the target temperature, the method further includes:

[0028] Moving the fixture to a predetermined position, the predetermined position being configured as a position for a robot to take out a wafer from the fixture;

[0029] Detect whether the temperature of the wafer drops to the target temperature; if so, end the cooling; if not, open the clamp or do not open the clamp and continue to cool the wafer until the temperature of the wafer drops to the target temperature, and then control the robot to take the wafer out of the clamp.

[0030] As an optional solution, the temperature treatment method of the wafer further includes:

[0031] Obtaining a first time length required for the fixture to lift the wafer from the electroplating solution and move the fixture to a predetermined position, wherein the predetermined position is configured as a position for a robot to take out the wafer from the fixture;

[0032] Obtaining a second time length required to reduce the wafer from a first temperature to a target temperature based on a first cooling speed, wherein the first temperature is the temperature of the wafer when the fixture drives the wafer to rise from the electroplating solution;

[0033] If the first time length is greater than or equal to the second time length, cooling the wafer at a first cooling rate;

[0034] If the first time length is less than the second time length, obtaining a second cooling rate required to make the first time length greater than or equal to the second time length;

[0035] The wafer is cooled at a second cooling rate.

[0036] As an optional scheme, the clamp includes a base and a pressure plate, the base is provided with a sealing ring, the sealing ring includes a sealing ring, a refrigeration component is provided at the edge of the pressure plate, the surface of the refrigeration component and the upper surface of the sealing ring correspond to each other in upper and lower spatial positions, and the projection of the refrigeration component in the vertical direction is greater than or equal to the projection of the upper surface of the sealing ring in the vertical direction, the refrigeration component is a thermoelectric material for cooling the wafer, when the pressure plate cover is provided on the base to apply a sealed external pressure to the wafer and press the wafer against the sealing ring, the distance between the refrigeration component and the back side of the wafer is a preset distance, at this time, the second cooling rate can be obtained and the second time length can be changed by changing the voltage or current of the thermoelectric material.

[0037] As an optional solution, the clamp includes a base and a pressure plate, the pressure plate is provided with a cooling channel, and the cooling channel is configured to pass a cooling medium to cool the wafer; the second cooling rate is obtained and the second time length is changed by changing the flow rate of the cooling medium in the cooling channel.

[0038] As an optional scheme, the clamp includes a base and a pressure plate, the base is provided with a sealing ring, the sealing ring includes a sealing ring, a temperature control structure is provided at the edge of the pressure plate, the surface of the temperature control structure and the back side of the sealing ring correspond to each other in the upper and lower spatial positions, and the projection of the temperature control structure in the vertical direction is greater than or equal to the projection of the back side of the sealing ring in the vertical direction, the temperature control structure is a thermoelectric material for cooling or heating the wafer, when the pressure plate cover is provided on the base to apply a sealed external pressure to the wafer and press the wafer against the sealing ring, the distance between the temperature control structure and the back side of the wafer is a preset distance, at this time, the second cooling rate can be obtained and the second time length can be changed by changing the voltage or current of the thermoelectric material.

[0039] As an optional solution, the method further includes:

[0040] When the fixture carries the wafer in the electroplating solution for electroplating, the temperature control structure heats the edge of the wafer to increase the temperature of the edge of the wafer so as to control the thickness of the electroplated film layer at the edge of the wafer, thereby achieving process control of wafer uniformity;

[0041] or

[0042] When the fixture carries the wafer in the plating solution for electroplating, the temperature control structure cools the edge of the wafer, so that the temperature of the edge of the wafer is reduced to control the thickness of the film layer electroplated on the edge of the wafer, thereby achieving process control of wafer uniformity.

[0043] The second object of the present invention is to provide an electroplating device, which, by adopting the above-mentioned temperature treatment method of the wafer, makes the electroplating process of the wafer have a high yield and high production efficiency.

[0044] To achieve this object, the present invention adopts the following technical solutions:

[0045] An electroplating device performs temperature treatment on a wafer by using the wafer temperature treatment method.

[0046] The third object of the present invention is to provide a computer-readable storage medium, which enables a processor to execute the above-mentioned temperature treatment method of the wafer, so that the electroplating process of the wafer has a high yield and high production efficiency.

[0047] To achieve this object, the present invention adopts the following technical solutions:

[0048] A computer-readable storage medium stores computer instructions, and the computer instructions are used to implement the temperature processing method of the wafer when executed by a processor.

[0049] The beneficial effects of the present invention are:

[0050] The wafer temperature treatment method of the present invention determines whether the wafer needs to be cooled according to the state of the wafer after the electroplating is completed and the fixture and the wafer are lifted from the electroplating solution. When it is determined that the wafer needs to be cooled, the wafer is subjected to a temperature reduction treatment, so that the photoresist on the wafer can be quickly cooled and solidified, and no longer excessively adheres to the sealing ring of the fixture, and the wafer and the sealing ring are changed from a bonding state to a non-bonding state. Therefore, when the subsequent robot takes out the wafer, it is ensured that the wafer is smoothly separated from the sealing ring, thereby avoiding wafer fragments, improving production capacity and reducing manufacturing costs; it can also avoid the sealing ring being pulled off the base, reducing the maintenance cost of the electroplating fixture; and the wafer temperature reduction treatment is performed during the post-processing of the wafer and the fixture, which will not increase additional process time, will not affect the subsequent processing technology, and improves the processing efficiency of the wafer.

[0051] The electroplating equipment of the present invention, by adopting the above-mentioned wafer temperature treatment method, can directly cool the wafer after electroplating, which facilitates the subsequent robot to take out the wafer from the clamp and improves the processing efficiency of the wafer in the subsequent process; at the same time, it also improves the yield rate when the wafer is taken out of the clamp during the electroplating process.

[0052] The computer-readable storage medium of the present invention can directly cool the wafer by enabling the processor to execute the above-mentioned wafer temperature processing method, thereby facilitating the subsequent robot to remove the wafer from the fixture, improving the processing efficiency of the subsequent process on the wafer, and at the same time, also improving the yield rate when the wafer is taken out of the fixture during the electroplating process. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 It is a structural schematic diagram of a clamp provided in a specific embodiment of the present invention;

[0054] Figure 2 is a cross-sectional view of a clamp provided in a specific embodiment of the present invention;

[0055] Figure 3 is a partial cross-sectional view of an electric wafer clamp provided in a specific embodiment of the present invention;

[0056] Figure 4 It is a flow chart of a temperature treatment method of a wafer provided by a specific embodiment of the present invention;

[0057] Figure 5 It is a structural schematic diagram of a pressure plate and a refrigeration component provided in a specific embodiment of the present invention;

[0058] Figure 6 It is a schematic diagram of a pressure plate with cooling channels provided in a specific embodiment of the present invention.

[0059] In the figure:

[0060] 100, base; 110, supporting member; 120, pressing member;

[0061] 200, pressure plate; 210, main body; 220, plug-in portion; 230, pressure plate main body; 240, buckle; 250, guide groove;

[0062] 300, guide column;

[0063] 400, wafer;

[0064] 500. Refrigeration parts;

[0065] 600, cooling channel;

[0066] 700, sealing ring; 710, annular groove; 720, sealing ring. DETAILED DESCRIPTION

[0067] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0068] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0069] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0070] In the description of this embodiment, the terms "upper", "lower", "right", etc., directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0071] This embodiment provides a temperature treatment method for a wafer, which is applied to an electroplating device, wherein the electroplating device at least includes a clamp for clamping and fixing the wafer.

[0072] In addition to the above, the electroplating equipment also includes an electroplating tank, an electroplating chamber, etc. The electroplating tank can hold the electroplating liquid, and the electroplating liquid in the electroplating tank can be transported to the electroplating pool in the electroplating chamber. The wafer plating fixture can carry the wafer and immerse it in the plating liquid in the plating pool to complete the electroplating process under process condition control. The robot can take the wafer out of the wafer plating fixture or place the wafer into the electroplating wafer fixture.

[0073] Usually, if Figure 1-Figure 3As shown, the fixture includes a base 100, a sealing ring 700 and a pressure plate 200. The base 100 is configured in an annular shape, the sealing ring 700 is mounted on the base 100, the sealing ring 700 is configured to contact the portion of the wafer 400 so that the portion where the sealing ring 700 contacts the wafer 400 is sealed under the action of external pressure, and the pressure plate 200 can be covered on the base 100 to apply a sealed external pressure to the wafer 400 and press the wafer 400 against the sealing ring 700. The fixture can carry the wafer 400 in the electroplating solution to complete electroplating, and carry the electroplated wafer 400 out of the electroplating solution.

[0074] The electroplating process needs to be completed at a certain temperature. For example, the copper electroplating process is generally carried out in an electroplating solution at 25°C-35°C, the SnAg electroplating process is generally carried out in an electroplating solution at 25°C, and the Ni electroplating process is generally carried out in an electroplating solution at 50°C-60°C. The applicant has found that during the electroplating process, the photoresist will soften after the temperature reaches a certain temperature. For example, some photoresists will soften when the temperature is greater than 45°C. The softened photoresist will adhere to the sealing ring 700. The adhesion during the electroplating process can improve the sealing of the fixture to the wafer 400; however, after the electroplating is completed, the adhesion will make it difficult to separate the wafer 400 from the sealing ring 700, and then when the robot removes the wafer 400 from the fixture, the wafer 400 will be broken and the sealing ring 700 will be pulled off the base 100.

[0075] In this regard, the temperature treatment method of the wafer in this embodiment includes:

[0076] After the fixture drives the wafer 400 to rise from the electroplating solution, a detection result is obtained, and the detection result is used to determine whether the wafer 400 needs to be cooled;

[0077] If the detection result is yes, the wafer 400 is cooled down after the fixture drives the wafer 400 to rise from the electroplating solution.

[0078] It should be noted that after the fixture drives the wafer 400 to rise from the plating solution, it is necessary to immediately detect whether the wafer 400 needs to be cooled down. The time point for determining whether to cool down must satisfy that if the wafer 400 needs to be cooled down, the wafer 400 can be cooled down immediately, so as not to affect the subsequent process. The time point for determining the cooling down can be the time point when the fixture starts to drive the wafer 400 to perform the lifting after the electroplating is completed, at which time the wafer 400 is still completely immersed in the plating solution; the cooling down time point can also be the time point when the wafer 400 is completely separated from the plating solution, or it can be a certain time point after the wafer 400 is separated from the plating solution, but this time point must be a certain time point that is short enough after the wafer 400 is separated from the plating solution, so as to avoid affecting the subsequent process. In this embodiment, it is preferred to determine whether to cool down the wafer 400 at the time point when the wafer 400 is separated from the plating solution.

[0079] The temperature treatment method of the wafer of this embodiment is as follows: after the electroplating of the wafer 400 is completed and the fixture and the wafer 400 are lifted from the electroplating liquid, it is first determined whether the wafer 400 needs to be cooled according to the state of the wafer 400; when it is determined that the wafer 400 needs to be cooled, the wafer 400 is cooled, so that the photoresist on the wafer 400 can be quickly cooled and solidified and no longer adhere to the sealing ring 700 of the fixture. Therefore, when the robot arm subsequently takes out the wafer 400, it is ensured that the wafer 400 is smoothly separated from the sealing ring 700, thereby avoiding wafer 400 fragments, improving production capacity and reducing manufacturing costs; it can also prevent the sealing ring 700 from being pulled off the base 100, thereby reducing the maintenance cost of the electroplating fixture.

[0080] In some embodiments, after the fixture drives the wafer 400 to rise from the electroplating solution, the method of obtaining the detection result includes:

[0081] The degree of adhesion between the wafer 400 and the sealing ring 700 is detected to determine the difficulty of the manipulator to remove the wafer 400 from the fixture after the fixture is opened. If the difficulty reaches the preset standard, a detection result that the wafer 400 needs to be cooled is generated (i.e., the detection result is yes). By detecting the degree of adhesion of the sealing ring 700 and confirming the difficulty of removing the wafer 400, it is possible to more accurately confirm whether the current state between the wafer 400 and the sealing ring 700 needs to be cooled, which ensures that the wafer 400 can be smoothly removed from the fixture, and the cooling step will not be performed when it is not necessary, avoiding unnecessary energy consumption. Optionally, the degree of adhesion between the wafer 400 and the sealing ring 700 can be obtained according to the temperature of the contact portion between the wafer 400 and the sealing ring 700. The higher the temperature, the higher the degree of adhesion, which means that the wafer 400 is more difficult to remove.

[0082] Optionally, the difficulty of removing the wafer 400 from the fixture can be divided into easy, normal, difficult, and unable to be removed according to the degree of adhesion between the wafer 400 and the sealing ring 700. Only when the difficulty is judged to be easy, the wafer 400 is not cooled down. When the judgment result is normal, difficult, or unable to be removed, the wafer 400 needs to be cooled down.

[0083] Optionally, the difficulty of removing the wafer 400 from the fixture can also be scored and evaluated according to the degree of adhesion between the wafer 400 and the sealing ring 700. For example, the higher the score is, the more difficult it is to remove the wafer 400. If the difficulty is less than 30 points, it means that it is easy to remove, so there is no need to cool the wafer 400; if it exceeds 30 points, the wafer 400 needs to be cooled.

[0084] The above are just different ways to determine the degree of adhesion. This embodiment is not limited to the above determination methods. As long as the degree of adhesion between the wafer 400 and the sealing ring 700 can be determined, it is within the protection scope of this embodiment.

[0085] In some embodiments, a temperature measuring component is provided on the platen 200, and the temperature measuring component can be a component for testing different temperatures, such as a temperature sensor. After the fixture drives the wafer 400 to rise from the electroplating solution, the method for obtaining the test result includes:

[0086] The temperature of the front and / or back of the wafer 400 detected by the temperature measuring component is obtained. The front of the wafer 400 is usually used for electroplating. In this embodiment, the temperature of the back of the wafer 400 is preferably detected. Of course, this embodiment is not limited to a more ideal detection of the temperature of the wafer 400 (such as detecting the temperature of both the front and back) to realize the scheme in this embodiment. When the temperature of the wafer 400 reaches the target temperature value, a detection result is generated that requires the wafer 400 to be cooled. It should be noted that the target temperature is a temperature at which the photoresist can be cured, that is, a temperature that ensures that the photoresist does not adhere to the sealing ring 700 at this temperature. Optionally, the target temperature can be a suitable temperature such as 30°C. It can be understood that the target temperature is allowed to be appropriately adjusted under different conditions, such as 31°C and other different temperatures that can realize the scheme of this embodiment.

[0087] When the temperature of wafer 400 is higher than the target temperature, it means that adhesion occurs between wafer 400 and sealing ring 700 (at this time, the photoresist softens and becomes sticky, causing wafer 400 to adhere to sealing ring 700), and the adhesion may cause wafer 400 to break when it is taken out of the fixture. At this time, the temperature of wafer 400 can be reduced to below the target temperature by cooling the wafer 400, avoiding the breakage of wafer 400 when it is taken out of the fixture, improving the electroplating yield and reducing the manufacturing cost. If the temperature of wafer 400 itself is below the target temperature, there is no need to cool the wafer 400 to avoid unnecessary energy consumption. Optionally, the temperature measuring component can be a temperature sensor, a thermocouple, etc.

[0088] Typically, after the fixture lifts the wafer 400 from the plating solution, it needs to go through processes such as plating solution recovery, cleaning, and drying, and then the fixture releases the wafer 400 so that the robot can take away the wafer 400. After the robot takes away the wafer 400, it will pass the wafer 400 to the next process flow, such as transferring it to the next electroplating, cleaning, edge removal, polishing, etching and other different equipment for the corresponding process.

[0089] Under normal circumstances, after the fixture lifts the wafer 400 from the electroplating solution, if the temperature of the wafer 400 is high, it may take several minutes, more than ten minutes or even longer for the wafer 400 to naturally drop from a higher temperature to the target temperature at which the robot can take it out from the fixture. However, after the fixture lifts the wafer 400 from the electroplating solution, it goes through processes such as electroplating solution recovery, cleaning, and drying, and then the fixture releases the wafer 400. These processes take only a short period of time, which is much shorter than the several minutes, more than ten minutes or even longer time it takes for the wafer 400 to drop from a higher temperature to the target temperature. Therefore, the wafer 400 needs to wait for a long time until it drops to normal temperature before the robot can take the wafer 400 out of the fixture. This seriously reduces the electroplating efficiency of the wafer 400, and also seriously affects the subsequent process, reducing production efficiency. Therefore, in this embodiment, the active cooling scheme can be used to reduce the temperature of the wafer 400 from a higher temperature to the target temperature, thereby greatly shortening the cooling time of the wafer 400 to a shorter time (the shorter time is less than or equal to the time it takes for the fixture to lift the wafer 400 from the plating liquid, and then go through the plating liquid recovery, cleaning, drying and other processes, and then release the wafer 400). Therefore, this embodiment can firstly improve the yield of the robot arm removing the wafer 400 from the fixture, secondly improve the electroplating efficiency of the wafer 400, and thirdly improve the subsequent process processing efficiency of the wafer 400.

[0090] In some embodiments, if the detection result for determining whether the wafer 400 needs to be cooled is yes, indicating that the wafer 400 needs to be cooled, the wafer 400 is cooled during the period from when the fixture takes the wafer 400 out of the electroplating solution to when the fixture is opened. With this arrangement, there is no need to set additional process time to wait for the wafer 400 to cool down, thereby avoiding the cooling of the wafer 400 increasing the process time of the entire electroplating process, thereby improving the electroplating efficiency.

[0091] In some embodiments, if the result of the test for determining whether the wafer 400 needs to be cooled is yes, and the wafer 400 needs to be cooled, and the wafer 400 cannot be cooled below the target temperature during the period from when the fixture carries the wafer 400 out of the plating solution to when the fixture is opened, the wafer 400 can continue to be cooled after the fixture is opened, until the temperature of the wafer 400 is reduced to the target temperature, and the manipulator is controlled to take out the wafer 400 from the fixture. It can be understood that the cooling continues before and after the fixture is opened, and no interruption occurs. In this embodiment, under the condition of limited cooling setting capacity, it is possible to ensure that the wafer 400 will not be broken by sacrificing a certain process time. This situation is mainly aimed at the specific process regulations, which lead to a high temperature of the wafer 400, and the refrigeration scheme of this embodiment cannot reduce the wafer 400 to the condition that the manipulator can normally take out the wafer 400 from the fixture after the fixture is opened. At this time, it is necessary to further cool down after the fixture is opened. This situation usually occurs when the temperature of the wafer 400 is high after electroplating. This situation generally occurs less frequently, but the possibility of occurrence cannot be ruled out. It should be noted that after the clamp is opened, the temperature can also be lowered normally, but this method will prolong the cooling time, reduce the processing efficiency of the wafer 400, and delay the subsequent process of processing the wafer 400. Therefore, this embodiment preferably adopts a cooling method for the wafer 400.

[0092] In order to better implement the cooling, in this embodiment, when the wafer 400 cannot be cooled below the target temperature during the period from when the clamp carries the wafer 400 out of the electroplating solution to when the clamp is opened, the temperature can be further cooled without opening the clamp until the temperature of the wafer 400 is reduced to the target temperature. Compared with cooling after opening the clamp, this method has better and faster cooling efficiency, thereby further improving the cooling efficiency.

[0093] In some embodiments, such as Figure 4 As shown, after the fixture drives the wafer 400 to rise from the electroplating solution, the specific method of cooling the wafer 400 includes:

[0094] Executing a preset first process, the first process comprising the step of spinning the fixture to recover the electroplating solution;

[0095] When executing the first process, detecting whether the temperature of the wafer 400 is reduced to the target temperature;

[0096] If yes, that is, the temperature of the wafer 400 is reduced to the target temperature, the cooling is terminated;

[0097] If not, that is, the temperature of the wafer 400 is not lower than the target temperature, it is further determined whether the first process is completed. If the first process is not completed, the first process is continued to be executed and the temperature of the wafer 400 is detected. If the first process is completed, a preset second process is executed, and the second process includes a step of cleaning the fixture and the wafer 400.

[0098] When executing the second process, detecting whether the temperature of the wafer 400 is reduced to the target temperature;

[0099] If yes, that is, the temperature of the wafer 400 is reduced to the target temperature, the cooling is terminated;

[0100] If not, that is, the temperature of the wafer 400 is not lower than the target temperature, it is further determined whether the second process is completed. If the second process is not completed, the second process is continued to be executed and the temperature of the wafer 400 is detected. If the second process is completed, a preset third process is executed, and the third process includes a step of drying the fixture and the wafer 400.

[0101] When executing the third process, detecting whether the temperature of the wafer 400 is reduced to the target temperature;

[0102] If yes, that is, the temperature of the wafer 400 is reduced to the target temperature, the cooling is terminated;

[0103] If not, that is, the temperature of the wafer 400 is not lower than the target temperature, it is further determined whether the third process is completed. If the third process is not completed, the third process is continued to be executed and the temperature of the wafer 400 is detected. If the third process is completed, the fixture is moved to a predetermined position, and the predetermined position is configured as a position for the robot to take out the wafer 400 from the fixture;

[0104] After reaching the predetermined position, continue to detect whether the temperature of the wafer 400 drops to the target temperature;

[0105] If yes, that is, the temperature of the wafer 400 is reduced to the target temperature, the temperature reduction is terminated, and the clamp is opened so that the robot can take away the wafer 400 after the electroplating is completed;

[0106] If not, the clamp is opened and the process returns to the step of detecting the temperature of the wafer 400 at a predetermined position until the temperature of the wafer 400 drops to the target temperature, and then the robot is controlled to take out the wafer 400 from the clamp.

[0107] In the above process, the temperature detection of the wafer 400 is real-time, that is, when the process is executed, the temperature of the wafer 400 is detected in real time. When the temperature drops to the target temperature, the temperature reduction is stopped, but the process does not stop. That is, the wafer temperature cooling, the wafer process, and the wafer temperature detection are performed synchronously. When the wafer temperature detection drops to the target temperature, the wafer temperature stops decreasing, that is, the wafer temperature cooling and the wafer temperature detection can be stopped, but the wafer process is executed normally. Through the above-mentioned temperature treatment method for the wafer, not only can the steps of spinning the fixture to recover the plating solution, the steps of cleaning the fixture and the wafer 400, the steps of spinning the fixture and the wafer 400, and the fixture being moved to a position where the robot can take out the wafer 400 can be executed in sequence after the wafer 400 is taken out of the plating solution; but it can also ensure that the temperature of the wafer 400 can be reduced to below the target temperature, and ensure that the wafer 400 can be smoothly taken out of the fixture.

[0108] In some embodiments, the temperature treatment method of the wafer further includes:

[0109] Obtaining a first time length required for the fixture to lift the wafer 400 from the electroplating solution and move the fixture to a predetermined position, wherein the predetermined position is configured as a position for the robot to take the wafer 400 out of the fixture;

[0110] Obtaining a second time length for reducing the wafer 400 from the first temperature to the target temperature based on the first cooling speed, wherein the first temperature is the temperature of the wafer 400 when the fixture drives the wafer 400 to rise from the electroplating solution;

[0111] If the first time length is greater than or equal to the second time length, the wafer 400 is cooled at a first cooling speed;

[0112] If the first time length is less than the second time length, obtaining a second cooling rate required to make the first time length greater than or equal to the second time length;

[0113] The wafer 400 is cooled at a second cooling rate.

[0114] The first time length required for the fixture to drive the wafer 400 to rise from the electroplating solution to move the fixture to a predetermined position is the time length including the process steps described above, namely the first process, the second process and the third process described above, and the process step of opening the fixture. Of course, the first time length may also include other process steps, which do not affect the implementation of this embodiment. The above three processes are just normal processes in the electroplating process. Different electroplating processes may include other processes. The first time length involved in the scheme in this embodiment determines the time period from the electroplating solution rising to the fixture moving to the predetermined position. All processes within this time period can occur. Therefore, this embodiment is not limited to some changes within this time period.

[0115] That is to say, the temperature treatment method of the wafer in this embodiment can match the corresponding cooling rate according to the actual temperature state of the wafer 400 when it rises from the plating liquid, so that the executed cooling rate can ensure that the wafer 400 is cooled to below the target temperature before the clamp moves to the predetermined position and opens, thereby avoiding increasing the process time of the entire electroplating process due to cooling the wafer 400.

[0116] This embodiment provides a specific structural design that can implement this embodiment, such as Figure 1-Figure 3As shown, the clamp includes a base 100 and a pressure plate 200, a sealing ring 700 is arranged on the base 100, and the sealing ring 700 includes a sealing ring 720. A cooling element 500 is arranged at the edge of the pressure plate 200. In this embodiment, the base 100 is preferably annular, and the corresponding sealing ring 700, sealing ring 720 and cooling element 500 are preferably distributed in annular shapes. The surface of the annular cooling element 500 corresponds to the upper surface of the sealing ring 720 in the upper and lower spatial positions, and the projection of the annular cooling element 500 in the vertical direction is greater than or equal to the projection of the upper surface of the sealing ring 720 in the vertical direction. The cooling element 500 is a thermoelectric material for cooling the wafer 400. Applying voltage or current can make the thermoelectric material absorb heat to produce a cooling effect. When the pressure plate 200 is covered on the base 100 to apply a sealed external pressure to the wafer 400 and press the wafer 400 against the sealing ring 700, the distance between the refrigeration component 500 and the back of the wafer 400 is a preset distance, which can be different distances such as 0.5 mm, 1 mm or 2 mm. At this time, the second cooling rate can be obtained and the second time length can be changed by changing the voltage or current of the thermoelectric material. In this embodiment, if the cooling effect of the thermoelectric material is to be changed, it must be done under specific settings, such as the above settings. First, the position of the thermoelectric material must correspond to the sealing ring 720 in the upper and lower spatial positions, and the surface must be greater than or equal to the surface of the sealing ring 720, that is, the projection of the annularly distributed cooling element 500 in the vertical direction is greater than or equal to the projection of the back of the sealing ring 720 in the vertical direction. This is one of the conditions; secondly, when the clamp clamps the wafer 400, the distance between the cooling element 500 and the back of the wafer 400 must be close enough to achieve a faster cooling effect, so that the cooling speed can be increased and the second time length can be changed by changing the voltage or current of the thermoelectric material.

[0117] In this embodiment, although the distance between the refrigeration element 500 and the wafer 400 should be as close as possible in actual application, so as to improve the refrigeration effect and make the wafer 400 cool down faster, since the pressure plate 200 needs to seal the wafer 400, the pressure plate 200 will apply external pressure to the wafer 400. If the refrigeration element 500 is in direct contact with the wafer 400, the refrigeration element 500 may be damaged under the action of external pressure. Therefore, it is necessary to ensure that the refrigeration element 500 is not damaged under the action of external pressure while ensuring that the refrigeration element 500 is relatively close to the wafer 400. Therefore, the above distances are not limited to the above numbers, which only represent actual numbers that may be generated in actual applications, and any other real distances are within the implementation range of this embodiment.

[0118] In some embodiments, a temperature control structure is provided at the edge of the pressure plate 200, and the surface of the temperature control structure corresponds to the upper surface of the sealing ring 720 in the upper and lower spatial positions, and the projection of the temperature control structure in the vertical direction is greater than or equal to the projection of the upper surface of the sealing ring 720 in the vertical direction. The temperature control structure is a thermoelectric material for cooling or heating the wafer 400. When the pressure plate 200 is covered on the base 100 to apply a sealed external pressure to the wafer 400 and press the wafer 400 against the sealing ring 700, the distance between the temperature control structure and the back side of the wafer 400 is a preset distance. At this time, the second cooling rate can be obtained and the second time length can be changed by changing the voltage or current of the thermoelectric material.

[0119] Due to the diversity and complexity of chip design, various characteristic patterns will be etched on the wafer 400. During the electroplating process, the thickness uniformity of the film layer electroplated on the wafer 400 will be affected by the characteristic pattern. Under the same electroplating hardware conditions, due to the difference in characteristic patterns, the edge thickness of the coating (i.e., the electroplated film layer) may be greater than or less than the center thickness, seriously affecting the yield of the wafer. In the prior art, the problem of uneven thickness is improved by setting a shielding ring on the lower side of the wafer 400 (the shielding ring can usually block the current flowing to the edge of the corresponding wafer during the electroplating process, thereby changing the thickness of the coating at the edge of the wafer, so that the film thickness at the edge of the wafer satisfies the situation of being greater than or less than the center thickness). However, when electroplating wafers with different characteristic patterns, the shielding ring must be stopped to replace, which seriously affects production efficiency and increases the risk of downtime.

[0120] In this regard, the temperature treatment method of the wafer also includes:

[0121] During the process of electroplating the wafer 400 with the fixture in the plating solution, the temperature control structure heats the edge of the wafer 400 to increase the temperature of the edge of the wafer 400 so as to control the thickness of the film plated on the edge of the wafer 400, thereby achieving process control of the uniformity of the wafer 400; or during the process of electroplating the wafer 400 with the fixture in the plating solution, the temperature control structure cools the edge of the wafer 400 to reduce the temperature of the edge of the wafer 400 so as to control the thickness of the film plated on the edge of the wafer 400, thereby achieving process control of the uniformity of the wafer 400.

[0122] The process control of the uniformity of the wafer 400 is mainly to enable the coating film electroplated on the front side of the wafer 400 during the electroplating process to be evenly distributed on the front side of the wafer 400, thereby achieving a uniform electroplating effect.

[0123] Based on the basic principle that the electroplating rate and the temperature of the wafer 400 are in an Arrhenius positive correlation, the edge of the wafer 400 can be heated or cooled during the electroplating process according to the actual needs of the wafer 400 to achieve local temperature control of the wafer 400, thereby achieving control of the uniformity of the coating thickness on the wafer 400. Since the temperature control can be performed in the form of software, there is no need to switch hardware, thereby reducing the risk of downtime and improving production efficiency.

[0124] When implementing this embodiment, a temperature control structure that can cool down or heat is preferably selected to implement the technical solution in this embodiment, which can not only cool down the wafer 400 to prevent it from sticking, but also achieve uniformity of the coating on the wafer 400 by cooling down or heating up.

[0125] In some embodiments, the pressure plate 200 is provided with a cooling channel, and the cooling channel is configured to allow a cooling medium to pass through to cool the wafer 400; a second cooling rate is obtained and a second time length is changed by changing a flow rate of the cooling medium.

[0126] This embodiment also provides an electroplating device, which performs temperature treatment on the wafer 400 by the above-mentioned wafer temperature treatment method. The electroplating equipment of this embodiment adopts the above-mentioned wafer temperature treatment method to achieve high yield and high production efficiency in the electroplating process of the wafer 400.

[0127] Specifically, the electroplating equipment includes a fixture, a manipulator and a processor, and the fixture and the manipulator are both communicatively connected to the processor. Among them, the fixture is used to seal and clamp the wafer 400 during the electroplating process of the wafer 400, and to carry the wafer 400 in the electroplating solution to complete the electroplating, and to carry the electroplated wafer 400 out of the electroplating solution. The manipulator is configured to remove the electroplated wafer 400 from the fixture. The processor is used to execute the above-mentioned temperature treatment method of the wafer, and control the fixture and the manipulator to move. It can be understood that the manipulator can be an existing manipulator with a suction cup, which will not be repeated here.

[0128] like Figure 1-Figure 3As shown, the fixture includes a base 100, a sealing ring 700 and a pressure plate 200. The base 100 is constructed in an annular shape, the sealing ring 700 is mounted on the base 100, the sealing ring 700 is configured to contact the portion of the wafer 400 so that the portion where the sealing ring 700 contacts the wafer 400 is sealed under the action of external pressure, and the pressure plate 200 can be covered on the base 100 to apply a sealed external pressure to the wafer 400 and press the wafer 400 against the sealing ring 700. In this embodiment, the edge area of ​​the front side of the wafer 400 overlaps the sealing ring 700, and the back side of the wafer 400 faces the pressure plate 200. Before electroplating, the wafer 400 is placed on the sealing ring 700 and the pressure plate 200 is covered on the base 100. The pressure plate 200 applies a sealed external pressure to the wafer 400 and presses the wafer 400 against the sealing ring 700. This can achieve a seal between the base 100 and the pressure plate 200 to prevent the plating solution from contacting the back of the wafer 400. The front portion of the wafer 400 is exposed from the lower side of the annular base 100 to facilitate contact with the plating solution.

[0129] like Figure 2 As shown, the fixture also includes a guide post 300, which is connected to one of the base 100 and the pressure plate 200, and slides with the other of the base 100 and the pressure plate 200. By setting the guide post 300, the base 100 and the pressure plate 200 can be accurately docked, thereby ensuring the sealing reliability of the wafer 400. In this embodiment, the guide post 300 is fixedly connected to the base 100, and the pressure plate 200 is provided with a guide groove 250, and the guide post 300 is inserted into the guide groove 250 and slides with the guide groove 250. In other embodiments, the guide post 300 can also be fixedly connected to the pressure plate 200, and the base 100 is provided with a guide groove 250 that slides with the guide post 300. Optionally, one, two, three or more guide posts 300 can be provided, which is not specifically limited here.

[0130] like Figure 2 and Figure 3 As shown, the base 100 includes a supporting member 110 and a pressing member 120, wherein the supporting member 110 is generally a disc-shaped ring, the sealing ring 700 is supported on the bottom surface of the supporting member 110, and the pressing member 120 is also annular, the pressing member 120 presses against the outer ring portion of the sealing ring 700 and is connected to the supporting member 110 through a fastener, so that the sealing ring 700 is installed on the base 100, and the edge of the wafer 400 overlaps the inner ring of the sealing ring 700. It can be understood that in other embodiments, the method of fixing the sealing ring 700 to the base 100 is not limited to this.

[0131] like Figure 3As shown, the inner ring area of ​​the sealing ring 700 includes a sealing ring 720 arranged in an annular shape, the upper surface of the sealing ring 720 is designed in a plane or with multiple rows of grooves, and the outer ring edge area of ​​the wafer 400 overlaps the upper surface of the sealing ring 720. Under the action of external force (i.e., the action of the pressure plate 200), the upper surface of the sealing ring 720 contacts the corresponding part of the front side of the wafer 400 for sealing. In this embodiment, an annular groove 710 is provided on the side of the inner ring area of ​​the sealing ring 700 facing the pressure plate 200, and the side wall of the annular groove 710 radially close to the center of the sealing ring 700 is the sealing ring 720. During actual use, after the pressure plate 200 is separated from the base 100, an elastic component can be arranged in the annular groove 710. When the pressure plate 200 is covered on the base 100, the pressure plate 200 applies a force to the elastic component to elastically deform the elastic component. When the pressure plate 200 moves upward away from the base 100, the elastic component restores the deformation and applies an upward force to the part of the wafer 400 suspended above the annular groove 710, so that the wafer 400 can be more easily separated from the sealing ring 700.

[0132] like Figure 2 and Figure 5 As shown, the pressure plate 200 includes a main body 210 and a plug-in portion 220 along the axial direction, and the plug-in portion 220 and the main body 210 are arranged along the axial direction. The plug-in portion 220 is arranged on the side of the main body 210 facing the base 100, and the cross-sectional area of ​​the plug-in portion 220 is smaller than the cross-sectional area of ​​the main body 210. The plug-in portion 220 is plugged into the base 100, so that the wafer 400 is pressed on the sealing ring 700. The main body 210 can be connected and locked with the base 100 through a connecting structure. In this embodiment, the guide groove 250 is arranged on the main body 210.

[0133] The clamp also includes a refrigeration structure, which is arranged on the base 100 or the pressure plate 200, and the parts in contact with the sealing ring 700 and the wafer 400 are arranged correspondingly in the upper and lower spatial positions. The refrigeration structure can cool the wafer 400 in contact with the sealing ring 700 after the clamp carries the wafer 400 out of the plating solution, so that the part in contact with the sealing ring 700 is transformed from a sticky state to a non-sticky state.

[0134] In this embodiment, when the refrigeration structure is working, it is not necessary to perform comprehensive and balanced cooling of the entire wafer 400. It is sufficient to cool the portion of the wafer 400 that contacts the sealing ring 700 so that the portion of the wafer 400 that contacts the sealing ring 700 does not adhere to the sealing ring 700. Therefore, when designing the refrigeration structure, the position of the refrigeration structure needs to be set correspondingly in space to the portion of the wafer 400 that contacts the sealing ring 700, that is, the setting that satisfies the upper and lower corresponding relationship can directly enable the refrigeration structure to directly cool the portion of the wafer 400 that contacts the sealing ring 700, so that the portion of the wafer 400 that contacts the sealing ring 700 quickly cools down, and the portion of the wafer 400 that contacts the sealing ring 700 changes from an adhered state to a non-adhesive state at the fastest speed.

[0135] Alternatively, if Figure 2 As shown, the refrigeration structure includes a refrigeration element 500, which is made of thermoelectric material, and the refrigeration element 500 is connected to the base 100 or the pressure plate 200. When the refrigeration element 500 made of thermoelectric material is not powered on, the refrigeration element 500 does not perform refrigeration, so it will not affect the electroplating process. When the refrigeration element 500 is powered on, its temperature drops rapidly and performs heat exchange with the wafer 400, so that the temperature of the photoresist on the wafer 400 can drop rapidly to below the target temperature, avoiding excessive adhesion of the photoresist to the sealing ring 700. The refrigeration element 500 made of thermoelectric material has a rapid temperature reduction response, is easy to control and has no noise. The type of thermoelectric material used in the specific refrigeration element 500 can be selected from existing thermoelectric materials. In addition, the cooling speed of the refrigeration element 500 to the wafer 400 can be changed by changing the voltage or current of the thermoelectric material.

[0136] Alternatively, if Figure 3 As shown, the cooling element 500 is installed at the edge of the base 100, and the cooling element 500 is distributed in an annular shape, the lower sealing ring 700 of the annular cooling element 500 contacts the wafer 400, the surface of the annular cooling element 500 corresponds to the upper surface of the sealing ring 720 in the upper and lower spatial positions, and the projection of the annular cooling element 500 in the vertical direction is greater than or equal to the projection of the upper surface of the sealing ring 720 in the vertical direction. With such an arrangement, the cooling range of the cooling element 500 completely covers the upper surface of the sealing ring 720, which can not only make the contact part of the wafer 400 and the sealing ring 700 cool down more quickly, but also ensure that the contact part cools down evenly, avoiding the situation where the contact part of the wafer 400 and the sealing ring 700 is partially adhered and partially non-adhered.

[0137] Preferably, the annular cooling element 500 can be continuously arranged in the radial direction, so as to achieve the best cooling efficiency. Of course, in other embodiments, the cooling element 500 can also be arranged discontinuously in the radial direction, such as at intervals, etc. The cooling effect of the interval arrangement is slightly worse than that of the continuous arrangement, but it can also achieve the effect of avoiding adhesion of the contact part of the wafer 400 and the sealing ring 700 for a long time (still between the first time point and the second time point).

[0138] Optionally, the width of the upper surface of the sealing ring 720 (i.e., the dimension in the radial direction) may be 1 mm, 2 mm, 3 mm, or 4 mm, etc. Generally, the width of the upper surface of the sealing ring 720 is not greater than 2 mm. It is sufficient as long as the width of the refrigeration element 500 is greater than the width of the sealing ring 720, and the projection of the refrigeration element 500 in the vertical direction covers the projection of the sealing ring 720 in the vertical direction.

[0139] In this embodiment, when the pressure plate 200 is covered on the base 100 to apply a sealed external pressure to the wafer 400 and press the wafer 400 against the sealing ring 700, the distance between the cooling element 500 and the back of the wafer 400 is 0.5 mm, 1 mm or 2 mm. Such a setting can prevent the cooling element 500 from being too low in temperature and damaging the wafer 400.

[0140] In some embodiments, such as Figure 5 As shown, the refrigeration element 500 is annular and is sleeved on one end of the pressure plate 200 close to the base 100. The refrigeration element 500 is arranged opposite to the sealing ring 700 (see Figure 2 ). The cooling element 500 is sleeved outside the pressure plate 200, which facilitates the installation of the cooling element 500. The cooling element 500 and the sealing ring 700 are arranged relative to each other, which can accurately cool the photoresist in contact with the sealing ring 700 and improve the cooling efficiency. In other embodiments, the cooling element 500 can also be arranged to be embedded in the pressure plate 200, which is not specifically limited here.

[0141] Alternatively, if Figure 6As shown, the refrigeration structure includes a cooling channel 600, and the cooling channel 600 is arranged in the base 100 or the pressure plate 200. The cooling channel 600 is communicated with an external cooling medium supply device, and the external cooling medium supply device is used to pass the cooling medium into the cooling channel 600. When it is necessary to cool the photoresist on the wafer 400, the cooling medium supply device circulates the cooling medium into the cooling channel 600, and when it is not necessary to cool the photoresist on the wafer 400, the cooling medium supply device stops the circulation of the cooling medium, or extracts the cooling medium from the cooling channel 600. Optionally, the cooling medium can be liquid nitrogen, water, oil, etc. In this embodiment, the temperature measuring component can be installed on the base 100 or on the pressure plate 200. In addition, the cooling speed of the wafer 400 can be changed by changing the flow rate of the cooling medium in the cooling channel 600.

[0142] In some embodiments, such as Figure 6 As shown, the cooling channel 600 is provided in the platen 200. The cooling channel 600 includes an annular portion, which is arranged opposite to the sealing ring 700. In this way, the cooling channel 600 is arranged in the platen 200, which facilitates the connection between the cooling channel 600 and the external pipeline. The annular portion of the cooling channel 600 is arranged opposite to the sealing ring 700, and the photoresist in contact with the sealing ring 700 can be accurately cooled, thereby improving the cooling efficiency. Specifically, as Figure 6 As shown, the pressure plate 200 includes a pressure plate body 230 and a buckle 240, the buckle 240 is connected to the lower side of the pressure plate body 230, the lower side of the pressure plate body 230 is provided with a half groove, the upper side of the buckle 240 is provided with a half groove, and the half groove on the pressure plate body 230 and the half groove on the buckle 240 are spliced ​​to form an annular portion. Optionally, a seal can be provided between the pressure plate body 230 and the buckle 240 to ensure the sealing of the cooling channel 600. In other embodiments (not shown), the cooling channel 600 can also be provided in the base 100, which is not specifically limited here.

[0143] Preferably, the fixture further includes a temperature measuring component, which is configured to detect the temperature of the contact portion between the wafer 400 and the sealing ring 700. The temperature measuring component is connected to the processor for communication, so that the electroplating equipment can determine whether the wafer 400 needs to be cooled and how to cool the wafer 400 according to the state of the wafer 400 when it rises from the electroplating solution. Optionally, the temperature measuring component can be a temperature sensor or a thermocouple, etc., which is not limited here.

[0144] This embodiment further provides a computer-readable storage medium, which stores computer instructions. The computer instructions are used to implement the above-mentioned temperature processing method for the wafer when executed by a processor.

[0145] Computer readable storage medium can be a tangible medium that can contain or store a computer program for use by an instruction execution system, device or equipment or used in combination with an instruction execution system, device or equipment. Computer readable storage medium can include but is not limited to electronic, magnetic, optical, electromagnetic, infrared or semiconductor systems, devices or equipment, or any suitable combination of the above. Alternatively, computer readable storage medium can be a machine readable signal medium. More specific examples of machine readable storage medium can include electrical connections based on one or more lines, portable computer disks, hard disks, random access memories (RAM), read-only memories (ROM), erasable programmable read-only memories (EPROM or flash memory), optical fibers, portable compact disk read-only memories (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the above.

[0146] Obviously, the above embodiments of the present invention are only examples for clearly explaining the present invention, and are not intended to limit the implementation of the present invention. For those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation and application scope, and the content of this specification should not be understood as limiting the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A temperature treatment method for a wafer, applied to an electroplating device, wherein the electroplating device comprises at least a fixture for clamping and fixing the wafer, characterized in that: The temperature treatment method of the wafer comprises: After the fixture drives the wafer to rise from the electroplating solution, a detection result is obtained, and the detection result is used to determine whether the wafer needs to be cooled; If the detection result is yes, the wafer is cooled down after the fixture drives the wafer to rise from the electroplating solution.

2. The temperature treatment method of a wafer according to claim 1, characterized in that: The fixture comprises a sealing ring for sealing the wafer, wherein the sealing ring is used to seal the wafer after the wafer is placed in the fixture so that the fixture can carry the wafer and immerse it in the electroplating solution; After the fixture drives the wafer to rise from the electroplating solution, the detection results are obtained, including: The degree of adhesion between the wafer and the sealing ring is detected to determine the difficulty of the robot to remove the wafer from the clamp after the clamp is opened. If the difficulty reaches a preset standard, a detection result indicating that the wafer needs to be cooled is generated.

3. The temperature treatment method of a wafer according to claim 1, characterized in that: The fixture comprises a base, a pressure plate, and a temperature measuring component arranged on the base or the pressure plate, wherein the temperature measuring component is used to detect the temperature of the front side and / or the back side of the wafer; After the fixture drives the wafer to rise from the electroplating solution, the detection results are obtained, including: The temperature of the wafer detected by the temperature measuring component is obtained, and when the temperature of the wafer reaches a target temperature value, a detection result indicating that the wafer needs to be cooled is generated.

4. The temperature treatment method of a wafer according to claim 1, characterized in that: After the fixture drives the wafer to rise from the electroplating solution, the wafer is cooled down. Thereafter, the temperature treatment method of the wafer further includes: Executing a preset first process, wherein the first process includes the step of spinning the fixture to recover the electroplating solution; When executing the first process, it is detected whether the temperature of the wafer is reduced to the target temperature, and if so, the temperature reduction is terminated.

5. The temperature treatment method of a wafer according to claim 4, characterized in that: When performing the first process, when it is detected that the temperature of the wafer has not dropped to the target temperature, the method further includes: Performing a preset second process, wherein the second process includes a step of cleaning the fixture and the wafer; When executing the second process, it is detected whether the temperature of the wafer is reduced to the target temperature; if so, the cooling is terminated.

6. The wafer temperature treatment method according to claim 5, characterized in that: When performing the second process, when it is detected that the temperature of the wafer has not dropped to the target temperature, the method further includes: Executing a preset third process, wherein the third process includes a step of drying the fixture and the wafer; When executing the third process, detecting whether the temperature of the wafer drops to a target temperature; If yes, then the cooling process ends.

7. The temperature treatment method of a wafer according to claim 6, characterized in that: When performing the third process, if it is detected that the temperature of the wafer has not dropped to the target temperature, the method further includes: Moving the fixture to a predetermined position, the predetermined position being configured as a position for a robot to take out a wafer from the fixture; Detecting whether the temperature of the wafer has dropped to the target temperature; if so, ending the cooling; If not, the clamp is opened or not opened, and the wafer is continuously cooled down until the temperature of the wafer drops to the target temperature, and then the robot is controlled to take out the wafer from the clamp.

8. The wafer temperature treatment method according to claim 1, characterized in that: The temperature treatment method of the wafer also includes: Obtaining a first time length required for the fixture to lift the wafer from the electroplating solution and move the fixture to a predetermined position, wherein the predetermined position is configured as a position for a robot to take out the wafer from the fixture; Obtaining a second time length required to reduce the wafer from a first temperature to a target temperature based on a first cooling speed, wherein the first temperature is the temperature of the wafer when the fixture drives the wafer to rise from the electroplating solution; If the first time length is greater than or equal to the second time length, cooling the wafer at a first cooling rate; If the first time length is less than the second time length, obtaining a second cooling rate required to make the first time length greater than or equal to the second time length; The wafer is cooled at a second cooling rate.

9. The wafer temperature treatment method according to claim 8, characterized in that: The clamp includes a base and a pressure plate, a sealing ring is arranged on the base, the sealing ring includes a sealing ring, a cooling element is arranged at the edge of the pressure plate, the surface of the cooling element and the upper surface of the sealing ring correspond to each other in upper and lower spatial positions, and the projection of the cooling element in the vertical direction is greater than or equal to the projection of the upper surface of the sealing ring in the vertical direction, the cooling element is a thermoelectric material for cooling the wafer, when the pressure plate cover is arranged on the base to apply a sealed external pressure to the wafer and press the wafer against the sealing ring, the distance between the cooling element and the back side of the wafer is a preset distance, at this time, the second cooling rate can be obtained and the second time length can be changed by changing the voltage or current of the thermoelectric material.

10. The wafer temperature treatment method according to claim 8, characterized in that: The clamp includes a base and a pressure plate, the pressure plate is provided with a cooling channel, and the cooling channel is configured to allow a cooling medium to pass through to cool the wafer; the second cooling speed is obtained and the second time length is changed by changing the flow rate of the cooling medium in the cooling channel.

11. The wafer temperature treatment method according to claim 8, characterized in that: The clamp includes a base and a pressure plate, a sealing ring is arranged on the base, the sealing ring includes a sealing ring, a temperature control structure is arranged at the edge of the pressure plate, the surface of the temperature control structure and the upper surface of the sealing ring correspond to each other in upper and lower spatial positions, and the projection of the temperature control structure in the vertical direction is greater than or equal to the projection of the upper surface of the sealing ring in the vertical direction, the temperature control structure is a thermoelectric material for cooling or heating the wafer, when the pressure plate cover is arranged on the base to apply a sealed external pressure to the wafer and press the wafer against the sealing ring, the distance between the temperature control structure and the back side of the wafer is a preset distance, at this time, the second cooling rate can be obtained and the second time length can be changed by changing the voltage or current of the thermoelectric material.

12. The wafer temperature treatment method according to claim 11, characterized in that: The method further comprises: When the fixture carries the wafer in the electroplating solution for electroplating, the temperature control structure heats the edge of the wafer to increase the temperature of the edge of the wafer so as to control the thickness of the electroplated film layer at the edge of the wafer, thereby achieving process control of wafer uniformity; or When the fixture carries the wafer in the plating solution for electroplating, the temperature control structure cools the edge of the wafer, so that the temperature of the edge of the wafer is reduced to control the thickness of the film layer electroplated on the edge of the wafer, thereby achieving process control of wafer uniformity.

13. An electroplating device, characterized in that: The electroplating equipment performs temperature treatment on the wafer by the temperature treatment method for the wafer according to any one of claims 1-12.

14. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the temperature processing method for a wafer according to any one of claims 1 to 12 when executed.

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