Operation monitoring method of multi-station crucible crystal furnace and multi-station crucible crystal furnace

Abstract

The present invention discloses an operation monitoring method of a multi-station crucible crystal furnace and a multi-station crucible crystal furnace, and relates to the technical field of operation monitoring methods of crystal furnaces. Among them, the operation monitoring method includes: obtaining the real-time growth parameters of the crystals in the crucibles of each crystal cultivation area; taking the crucible corresponding to the crystal whose real-time growth parameters do not match the corresponding preset crystal growth index as the target crucible, and issuing a first prompt message; starting the pusher corresponding to the target crucible station to move the target crucible to the outside of the crystal furnace; according to the type of crystal cultivated by the target crucible, selecting a compensation crucible and determining the cultivation condition parameters of the spare cultivation area, and setting the compensation crucible on the lifting assembly at the spare cultivation area, so that the compensation crucible enters the spare cultivation area under the drive of the corresponding pusher to cultivate crystals. This method can effectively speed up production efficiency and thus ensure the smooth execution of the production plan.

Description

Technical Field

[0001] The present disclosure generally relates to the technical field of operation monitoring methods of crystal furnaces, and in particular to an operation monitoring method of a multi-station crucible crystal furnace and a multi-station crucible crystal furnace. Background Art

[0002] The multi-station crucible descent method is an advanced crystal growth technology, which is developed on the basis of the traditional crucible descent method. The main feature of this method is that it can process multiple crucibles at the same time, which improves production efficiency and is suitable for large-scale production needs.

[0003] Multi-station crucible crystal furnaces have significant advantages in improving production efficiency and automation. They usually adopt a unified control platform and crystal growth system to ensure that the crystals in the multi-station crucible can grow synchronously and stably in a relatively short preparation and growth cycle.

[0004] However, since the current multi-station crucibles are mostly controlled in a linkage manner, independent risk monitoring and subsequent risk remediation are impossible. As a result, even if large-scale production needs are met to a certain extent, the production cycle is easily disrupted because of the inability to flexibly adjust each station, and managers are unable to adjust production plans in time. Summary of the invention

[0005] In view of the above-mentioned defects or deficiencies in the prior art, it is desirable to provide an operation monitoring method of a multi-station crucible crystal furnace and a multi-station crucible crystal furnace.

[0006] In a first aspect, the present invention provides an operation monitoring method for a multi-station crucible crystal furnace, wherein the crystal furnace comprises a plurality of independently arranged crystal cultivation areas and a spare cultivation area, and each of the crystal cultivation area and the spare cultivation area has at least two crucible stations, and the crucible stations are used to place crucibles for cultivating crystals; each of the crystal cultivation area and the spare cultivation area is provided with a corresponding group of lifting components, and the lifting components include a plurality of pushers, and each of the pushers corresponds to one of the crucible stations, and the pushers of the same group of lifting components can operate synchronously or independently; The operation monitoring method comprises: Obtaining real-time growth parameters of the crystals in the crucibles of each of the crystal growing areas; The crucible corresponding to the crystal whose real-time growth parameter does not conform to the corresponding preset crystal growth index is used as a target crucible, and a first prompt information is issued; the first prompt information at least includes a target crucible position where the target crucible is located; Starting the pusher corresponding to the target crucible station to move the target crucible to the outside of the crystal furnace; According to the type of crystal to be cultivated in the target crucible, a compensating crucible is selected and the cultivation condition parameters of the spare cultivation area are determined, and the compensating crucible is set on the lifting component at the spare cultivation area so that the compensating crucible enters the spare cultivation area for crystal cultivation under the drive of the corresponding pushing member.

[0007] According to the technical solution provided by the present invention, the lifting assembly includes a gas source and a plurality of gas paths connected to the gas source; each of the pushers is connected to one of the gas paths, and is used to drive the pusher to move the crucible when the corresponding gas path is connected; Starting the pusher corresponding to the target crucible station where the target crucible is located to move the target crucible to the outside of the crystal furnace specifically includes: Controlling the conduction of the gas path corresponding to the target crucible station; The corresponding pushing member is driven to drive the target crucible at the target crucible station to move in a direction away from the target crucible station to the outside of the crystal furnace.

[0008] According to the technical solution provided by the present invention, according to the type of crystal cultivated in the target crucible, a compensation crucible is selected and the cultivation condition parameters of the spare cultivation area are determined, which specifically includes: According to the crystal type cultivated by the target crucible, a compensating crucible is selected and the compensating crucible is divided into a plurality of crucible groups; each of the crucible groups includes at least one compensating crucible for cultivating the same crystal type; According to the crucible group, the spare incubation area is divided into a plurality of compensation incubation areas, and the incubation condition parameters of each compensation incubation area are determined according to the crystal type corresponding to each crucible group.

[0009] According to the technical solution provided by the present invention, the spare cultivation area is divided into a plurality of compensation cultivation areas according to the crucible group, specifically including: Confirming a standby area to be divided in the standby cultivation area; the standby area to be divided is composed of crucible stations in the standby cultivation area that are in an idle state; A target crucible combination is obtained from the crucible group according to the first compensation cultivation influencing parameter and the second compensation cultivation influencing parameter, wherein the number of the compensation crucibles included in the target crucible combination is not greater than the number of crucible stations in the spare area to be divided; wherein the first compensation cultivation influencing parameter includes the number of compensation crucibles included in each crucible group and the number of crucible stations included in the spare area to be divided; and the second compensation cultivation influencing parameter includes at least one of the crucible station utilization rate, the crystal priority, and the number of compensation cultivation areas; Based on the number of compensating crucibles included in the target crucible combination and the type of crystals, the spare area to be divided is divided to obtain a plurality of the compensating cultivation areas.

[0010] According to the technical solution provided by the present invention, when the second compensation cultivation influencing parameter includes crystal priority; Obtaining a target crucible combination from the crucible group according to the first compensation cultivation influence parameter and the second compensation cultivation influence parameter specifically includes: Sorting the crucible groups according to the crystal priority of the crystal type corresponding to each crucible group to obtain a first sequence; Compensating crucibles are selected from the first sequence in sequence as target compensating crucibles until the number of the target compensating crucibles is equal to the number of crucible stations included in the spare area to be divided, and all the target compensating crucibles are used as the target crucible combination.

[0011] According to the technical solution provided by the present invention, when the second compensation cultivation influencing parameter includes the crucible station utilization rate and the number of compensation cultivation areas; Obtaining a target crucible combination from the crucible group according to the first compensation cultivation influence parameter and the second compensation cultivation influence parameter specifically includes: According to the number of compensating crucibles included in each of the crucible groups and the number of crucible stations included in the spare area to be divided, a plurality of crucible sets are obtained; the total number of compensating crucibles included in the crucible set is not greater than the number of crucible stations in the spare area to be divided, and each of the crucible sets includes at least one crucible group; Selecting the crucible set with the highest crucible station utilization rate as the candidate crucible set and obtaining the number of compensation cultivation areas corresponding to each candidate crucible set; the number of compensation cultivation areas is equal to the number of crystal types included in the candidate crucible set; The candidate crucible set with the smallest number of the compensatory incubation areas is used as the target crucible combination.

[0012] According to the technical solution provided by the present invention, after obtaining the target crucible combination from the crucible group according to the first compensation cultivation influence parameter and the second compensation cultivation influence parameter, the method further includes: Presenting a second prompt message; The second prompt information includes: the crucible groups not included in the target crucible combination and the number of the compensating crucibles in each of the crucible groups currently.

[0013] According to the technical solution provided by the present invention, in the standby cultivation area, a heat insulation board movable along the first direction is provided between each two adjacent crucible stations, and the heat insulation board is used to separate the crucible stations to form a plurality of the compensation cultivation areas; Based on the number and crystal type of the compensating crucibles included in the target crucible combination, the spare area to be divided is divided to obtain a plurality of the compensating cultivation areas, specifically including: Determining the number of the compensation growth areas according to the number of crystal types included in the target crucible combination, and determining the number of compensation crucibles included in each compensation growth area according to the number of compensation crucibles corresponding to each crystal type; Determining target heat shields for dividing a plurality of the compensating incubation areas based on the number of the compensating incubation areas and the number of compensating crucibles included in each compensating incubation area; The target heat insulation board is controlled to move until the mutually isolated compensation cultivation areas are formed in the standby cultivation area.

[0014] According to the technical solution provided by the present invention, the method further includes: Obtaining the test results of the crystals in the spare incubation area in the consistency sampling test, and taking the crystals whose test results are less than a preset consistency threshold as difference crystals; When the number of the difference crystals is greater than a preset number threshold, the cultivation condition parameters of the spare cultivation area when used to cultivate the crystal type corresponding to the difference crystals are modified.

[0015] In a second aspect, the present invention provides a multi-station crucible crystal furnace, which is applied to the above-mentioned operation monitoring method, and the crystal furnace comprises: A crystal furnace body, wherein a plurality of crystal cultivation areas and a spare cultivation area are independently arranged in the crystal furnace body; each of the crystal cultivation area and the spare cultivation area is provided with a crystal cultivation component; The crystal cultivation assembly comprises: a plurality of independently arranged temperature-averaging tubes; a crucible station is formed in each of the temperature-averaging tubes, and an annular heating element is arranged around the outside of the temperature-averaging tube for heating the crucible in the crucible station; A lifting assembly, wherein the lifting assembly is provided with a plurality of groups, and each group of lifting assemblies is respectively provided in one-to-one correspondence with the spare cultivation area and the plurality of crystal cultivation areas; the lifting assembly comprises: a plurality of pushing members, each of the pushing members is respectively provided in correspondence with each of the crucible stations in the corresponding cultivation area, and is used for sending the crucible into or moving it out of the crucible station.

[0016] To summarize, the present technical solution specifically discloses an operation monitoring method of a multi-station crucible crystal furnace and a multi-station crucible crystal furnace, wherein the operation monitoring method comprises: obtaining the real-time growth parameters of the crystals in the crucibles of each crystal cultivation area; taking the crucible corresponding to the crystal whose real-time growth parameters do not conform to the corresponding preset crystal growth indicators as the target crucible, and issuing a first prompt message; the first prompt message at least includes the target crucible position where the target crucible is located; starting the pushing member corresponding to the target crucible position to move the target crucible to the outside of the crystal furnace; according to the type of crystal cultivated in the target crucible, selecting a compensating crucible and determining the cultivation condition parameters of the spare cultivation area, and setting the compensating crucible on the lifting assembly at the spare cultivation area, so that the compensating crucible enters the spare cultivation area for crystal cultivation under the drive of the corresponding pushing member.

[0017] Most of the existing multi-station crucibles are controlled in linkage, and are unable to perform independent risk monitoring and subsequent risk remediation, which makes the production cycle very easy to be disrupted. In the present invention, flexible control of the movement of the crucibles in each crucible station is achieved through a pusher that can operate independently or synchronously. When the target crucible is found, it can be independently moved out of the crystal furnace and enter the compensation crystal stage at the same time. The corresponding compensation crucible is selected to be cultivated in the spare cultivation area, thereby ensuring the smooth execution of the production plan to avoid many problems caused by delays in the production plan. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings: Figure 1 The figure is a schematic diagram of the overall application scenario of an operation monitoring method for a multi-station crucible crystal furnace.

[0019] Figure 2 The present invention is a schematic flow chart of an operation monitoring method of a multi-station crucible crystal furnace.

[0020] Figure 3 The figure is a schematic diagram of the expanded flow of step S3 in a method for monitoring the operation of a multi-station crucible crystal furnace.

[0021] Figure 4 The present invention is a schematic diagram of the division scenario of the spare cultivation area in a method for monitoring the operation of a multi-station crucible crystal furnace.

[0022] Figure 5 The present invention is a schematic diagram showing the division of a reserve cultivation area.

[0023] Numbers in the figure: 1. Crystal furnace; 2. Crystal cultivation area; 3. Standby cultivation area; 4. Crucible station; 5. Crucible; 51. Compensating crucible; 6. Pusher; 7. Gas source; 8. Gas path; 9. Heat insulation board; 10. Temperature equalizing tube; 11. Crystal furnace body; 12. Annular heating element; 13. Carrying platform; 14. Annular sealing element; 15. Solenoid control valve; 16. Furnace mouth sealing plate. DETAILED DESCRIPTION

[0024] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It should also be noted that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0025] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0026] In order to make the technical solution of the embodiment of the present invention clearer and easier to understand, the application background of the embodiment of the present invention is introduced below.

[0027] The multi-station crucible descent method is an advanced crystal growth technology, which is developed on the basis of the traditional crucible descent method. This method places crucibles in multiple stations, so that the crystal growth process can be carried out under more uniform conditions. The key advantage of the multi-station crucible descent method is that it can grow larger, high-quality and uniform crystals. From a production perspective, the multi-station crucible descent method can also significantly improve production efficiency and the degree of automation of crystal growth.

[0028] Furthermore, the multi-station crucible descent method has been used to grow a variety of crystal materials, such as bismuth germanate (BGO) crystals, thermoelectric crystals, and piezoelectric crystals. These crystal materials are widely used in the fields of physics, chemical sensors, laser technology, and new energy. In addition, with the advancement of automation control technology, the process of crystal growth by the multi-station crucible descent method also needs to be further improved.

[0029] Combined with the above content, it can be seen that in actual applications, in order to meet the placement of multiple crucibles, the crystal furnace needs to adaptively arrange multiple crucible stations; but in terms of automated control, the current multi-station crucibles are mostly controlled in linkage, which can further reduce the complexity of crystal furnace monitoring, but at the same time it also leads to the inability to perform independent risk monitoring of multiple crucible stations, thereby affecting the timely implementation of subsequent risk remedial measures. In this way, even if the production method meets the large-scale production needs to a certain extent, the production cycle is easily disrupted due to the inability to flexibly regulate and monitor each crucible station. This is a very serious situation for large-scale production needs.

[0030] In view of this, an embodiment of the present invention proposes an operation monitoring method for a multi-station crucible crystal furnace, specifically including: obtaining real-time growth parameters of crystals in the crucibles of each crystal cultivation area 2; taking the crucible 5 corresponding to the crystal whose real-time growth parameters do not match the corresponding preset crystal growth indicators as the target crucible, and issuing a first prompt message; the first prompt message at least includes the target crucible station where the target crucible is located; starting the pushing member 6 corresponding to the target crucible station to move the target crucible to the outside of the crystal furnace 1; according to the type of crystal cultivated in the target crucible, selecting the compensation crucible 51 and determining the cultivation condition parameters of the spare cultivation area 3, and setting the compensation crucible 51 on the lifting assembly at the spare cultivation area 3, so that the compensation crucible 51 enters the spare cultivation area 3 for crystal cultivation under the drive of the corresponding pushing member 6.

[0031] It can be seen that in the embodiment of the present invention, the crystal furnace 1 includes a plurality of crystal growing areas 2 and a spare growing area 3, and independent growth parameter monitoring is performed in each area to accurately capture the target crucible where the crystal that does not meet the preset crystal growth index is located; further, in order to prevent the target crucible from affecting the crucible 5 on other crucible stations 4 in the same area, it is necessary to start the pusher 6 at the target crucible station to move it out of the crystal furnace 1 separately; in addition, after the target crucible is moved out, in order to ensure the smooth execution of the production plan, a compensating crucible 51 consistent with the crystal type cultivated by the target crucible will be selected to cultivate crystals in the spare growing area 3; accordingly, the entire monitoring method, from the early crystal monitoring to the later crucible remediation, all safeguard the corresponding production plan, which can greatly promote production efficiency, and also liberate more manpower and material resources.

[0032] In order to make the technical solution of the present invention clearer and easier to understand, Figure 1 First, the structure and application scenarios of the multi-station crucible crystal furnace are described. Specifically, the crystal furnace 1 used in the embodiment of the present invention includes: A crystal furnace body 11, wherein a plurality of crystal growing areas 2 and a spare growing area 3 are independently arranged in the crystal furnace body 11; each crystal growing area 2 and the spare growing area 3 are provided with a crystal growing component; The crystal cultivation assembly includes: a plurality of independently arranged temperature-averaging tubes 10; a crucible station 4 is formed in each temperature-averaging tube 10, and an annular heating element 12 is arranged around the outside of the temperature-averaging tube 10 for heating the crucible 5 in the crucible station 4; The lifting components are provided with a plurality of groups, and each group of lifting components is respectively provided in one-to-one correspondence with the spare cultivation area 3 and the plurality of crystal cultivation areas 2; the lifting components include: a plurality of pushing members 6, each pushing member 6 is respectively provided in correspondence with each crucible station 4 in the corresponding cultivation area, and is used for sending the crucible 5 into or out of the crucible station 4.

[0033] In the embodiment of the present invention, the crystal furnace body 11 is divided into a plurality of crystal cultivation areas 2 and a standby cultivation area 3, each area forms an independent cultivation space, and does not interfere with each other, so that each crystal cultivation area 2 can be used to cultivate different types of crystals. For details, see Figure 1 The crystal growing area F and the crystal growing area G shown in the figure have obviously different crucibles 5 placed in the two crystal growing areas; accordingly, the growing condition parameters of each crystal growing area 2 need to be confirmed according to the type of crystal currently required to be grown. The growing condition parameters here are, for example, the heating temperature, vacuum degree, insulation time and crucible descent rate and other parameters corresponding to each crystal type, and there is no specific limitation; the spare growing area 3 is used to grow specific crystals, for example, crystals whose real-time growth parameters are inconsistent with the preset crystal growth indicators found in the crystal growing area 2, or crystals in some faulty crucibles (for example, a leaking pot), can be compensated and grown in time to ensure that the crystal growing production plan can proceed smoothly.

[0034] The crystal cultivation component is a component used to participate in crystal cultivation, including a temperature-equalizing tube 10, and a crucible station 4 is formed in each temperature-equalizing tube 10 for accommodating each crucible 5. Each crucible 5 has a pre-prepared crystal seed. The temperature-equalizing tube 10 can maintain the internal crucible 5 under stable heating. The annular heating element 12 outside each temperature-equalizing tube 10 is used to provide the required temperature of the crucible 5 at different stages, and its type can be selected from resistance wires; in addition, the crystal cultivation component can also include a down-guide tube for guiding the crystal seed to descend stably and not easily tilted; in summary, due to the different crystal cultivation methods, the settings of the crystal cultivation component are also diverse, and there are also many crystal furnaces on the market, so I will not go into details here.

[0035] It should be explained that the outside of the temperature-averaging tube 10 in the spare cultivation area 3 is provided with an independent annular heating element 12, while the annular heating element 12 in the crystal cultivation area 2 can be set as needed. If the number of crucible stations in each area is small, one annular heating element 12 can be selectively arranged.

[0036] In addition, the crystal cultivation assembly in the spare cultivation area 3 also includes: a plurality of movable insulation plates 9, at least one insulation plate 9 is arranged between each two adjacent crucible stations 4, and insulation plates 9 are arranged on both sides of the two crucible stations 4 located at the end. The insulation plates 9 can separate the spare cultivation area 3 into a plurality of independent crystal cultivation spaces, so there are corresponding requirements for the length and material of the pair of insulation plates 9, and their length needs to meet the height of the spare cultivation area 3, and the material needs to be high temperature resistant material.

[0037] The lifting assembly is a component used to transport and move the crucible 5. Each crystal growing area 2 and the spare growing area 3 are each provided with a corresponding group of lifting assemblies. Each lifting assembly includes a driving member that can be used to drive multiple pushers 6 of the same group to operate independently or synchronously. A carrying platform 13 is provided at the execution end of the pusher 6 to support the crucible 5, and an annular seal 14 is also provided in the middle of the carrying platform 13. The annular seal 14 is arranged around the side of the crucible 5. The annular seal 14 can provide a certain sealing effect when the crucible 5 moves. At the same time, the annular seal 14 needs to be made of a material that is resistant to high temperature and corrosion and has good sealing performance. In the embodiment of the present invention, special rubber or other seals with a certain elasticity can be selected to ensure that the crucible 5 will not get stuck or have poor sealing due to its external design when it is subsequently moved.

[0038] The lifting component structure adopted in the embodiment of the present invention is described in detail below: the driving parts in each group of lifting components are gas sources 7, and the gas source 7 here can be selected from components such as gas generators or air pumps, and at least one is set; the gas source 7 is connected to multiple gas paths 8, and each gas path 8 is respectively provided with an electromagnetic control valve 15, and the electromagnetic control valve 15 is used to control the gas flow state in each gas path 8, and the pushing member 6 can be selected as a cylinder, which is connected to each corresponding gas path 8. By controlling the opening and closing of the electromagnetic control valve 15 on each gas path 8, independent or linkage control of multiple pushing members 6 in the same group can be achieved.

[0039] It needs to be explained that since the layout of the gas source 7 and the design of the gas path 8 will affect the synchronization of the movement control, they need to be planned in advance to ensure that when multiple pushers 6 are controlled in linkage, the gas circulation rate will not affect the synchronous control. Accordingly, parameters such as the gas supply volume, gas discharge volume, gas supply pressure and the cylinder expansion and contraction volume are also calibrated by technical personnel in the early stage to ensure that the movement of the pusher 6 can match the corresponding cultivation condition parameters. No further details will be given here.

[0040] Based on the above description, when the crucible 5 containing the seed crystal is heated to the corresponding temperature, the material melts, and at the same time the crucible 5 is controlled to slowly descend. The molten material in the crucible 5 begins to crystallize when the temperature at the bottom of the crucible 5 gradually decreases, and finally the crystal grows from bottom to top.

[0041] In order to make the technical solution of the present invention clearer and easier to understand, the operation monitoring method provided by the embodiment of the present invention is introduced below with reference to the accompanying drawings.

[0042] Specifically, please refer to Figure 1 and Figure 2 The overall application scenario schematic diagram and process schematic diagram of an operation monitoring method of a multi-station crucible crystal furnace provided in this embodiment are shown. The operation monitoring method includes the following steps: S1, obtaining real-time growth parameters of the crystals in the crucible 5 of each crystal growing area 2; This process can be carried out by the monitoring module in the crystal control system to collect real-time growth parameters and make subsequent judgments. Here, the real-time growth parameters include at least: temperature, crystal descent speed, crystal shape and size and other parameters, and for different crystal types, the selection and judgment criteria of each parameter are also different.

[0043] S2, taking the crucible 5 corresponding to the crystal whose real-time growth parameters do not conform to the corresponding preset crystal growth index as the target crucible, and issuing a first prompt message; the first prompt message at least includes the target crucible position where the target crucible is located; Since there are multiple crystal growing areas 2 inside the crystal furnace 1, after obtaining the real-time growth parameters of the crystals in each crucible 5, it is necessary to make the next judgment based on the preset crystal growth indicators corresponding to the crystal type, and use the crucible 5 corresponding to the crystal that does not meet the preset crystal growth indicators as the target crucible. This process can also be executed by the monitoring module in the crystal control system.

[0044] When the target crucible is monitored, the first prompt information is also sent synchronously. The first prompt information is used to prompt the specific location information of the target crucible. For example, Figure 1 In the figure, the crucible located outside the crystal furnace 1 in the crystal growing area G is the target crucible, and the crucible station 4 where it is located is the target crucible station; the key information that can be locked according to the target crucible station is the type of crystal grown in the crucible 5. Here, the first prompt information can be in the form of a message prompt on the central control interface or an information prompt presented on the terminal screen such as a mobile phone or tablet computer, and there is no specific limitation.

[0045] S3, starting the pusher 6 corresponding to the target crucible station to move the target crucible to the outside of the crystal furnace 1; Specifically, after locking the target crucible station, the pushing member 6 at the corresponding crucible station 4 can be started, and the target crucible can be moved to the outside of the crystal furnace 1 by utilizing the contraction of the pushing member 6. Such a design can, on the one hand, prevent the target crucible from interfering with the normal growth of other crystals in the same crystal cultivation area 2, and on the other hand, can timely assist technical personnel in making reasonable production plan adjustments. For example, if we find that there is a problem with the annular heating element 12 on the side of the target crucible station, then the crucible station 4 needs to be stopped for maintenance, and the corresponding crystal cultivation area 2 will have at least one less crucible station. After knowing this situation, the technical personnel can find other crystal furnaces 1 for cultivation. Of course, in the embodiment of the present invention, a spare cultivation area 3 is provided for compensatory cultivation.

[0046] In a preferred embodiment, see Figure 3 , step S3 after expansion further includes the following steps: S31, controlling the gas path 8 corresponding to the target crucible station to be turned on; Here, the air path 8 is connected to the external environment by controlling the air leakage port of the electromagnetic control valve 15, that is, the air leakage passage is connected. When the air source 7 does not supply air, the cylinder air leakage action is executed to cause the actuator end of the cylinder to contract.

[0047] S32 , driving the corresponding pusher 6 to drive the target crucible 5 at the target crucible position to move in a direction away from the target crucible position to the outside of the crystal furnace 1 .

[0048] Since the air leakage passage is open, the execution end of the pusher 6 can be controlled to contract, thereby driving the target crucible to move away from the target crucible position and moving the target crucible 5 to the outside of the crystal furnace 1; next, it is actually necessary to timely control the furnace mouth sealing plate 16 set at the furnace mouth of the crystal furnace 1 to move to the target crucible position to seal it. The furnace mouth sealing plate 16 can be made of special rubber or asbestos, and its structure needs to match the furnace mouth corresponding to the target crucible position, and there is no special limitation.

[0049] S4. According to the type of crystal to be cultivated in the target crucible, select the compensating crucible 51 and determine the cultivation condition parameters of the spare cultivation area 3, and set the compensating crucible 51 on the lifting component in the spare cultivation area 3 so that the compensating crucible 51 can enter the spare cultivation area 3 for crystal cultivation under the drive of the corresponding pushing member 6.

[0050] Specifically, when entering the compensation cultivation stage, it is first necessary to select the corresponding compensation crucible 51 according to the type of crystal to be cultivated in the target crucible. In simple terms, it is necessary to select the crystal seed to be placed in the compensation crucible 51, and then the compensation crucible 51 needs to be set on the lifting assembly in the spare cultivation area 3, and use the pushing member 6 on the fixed position of the compensation crucible 51 to send it to the spare cultivation area 3 for crystal cultivation.

[0051] Taking the pusher 6 as an example, the process of sending the compensating crucible 51 into the spare incubation area 3 is as follows: by controlling the air inlet of the electromagnetic control valve 15 to be connected, the gas path 8 is connected with the air inlet of the cylinder, that is, the air inlet passage is connected, and the gas generated by the gas source 7 enters the cylinder, so that the execution end of the cylinder is extended, and then the corresponding compensating crucible 51 is sent into the spare incubation area 3. After reaching the corresponding height, the electromagnetic control valve 15 is controlled to be closed, and the execution end of the cylinder can maintain the extension.

[0052] In a preferred embodiment, the step S4 of "selecting the compensation crucible 51 and determining the cultivation condition parameters of the spare cultivation area 3 according to the crystal type cultivated in the target crucible" specifically includes the following steps: Step 1: Select a compensating crucible 51 according to the crystal type to be cultivated in the target crucible and divide the compensating crucible 51 into a plurality of crucible groups; each crucible group includes at least one compensating crucible 51 for cultivating the same crystal type; Specifically, since the crystal growing work in each crystal growing area 2 is mostly carried out synchronously or in sequence with a short interval, if there is a crucible failure or improper operation when placing the crystal seeds in the early stage, then multiple crucibles 5 may not meet the preset crystal growth indicators within a relatively concentrated time period. Therefore, multiple target crucibles will be obtained at this time. Then, when selecting the compensating crucible 51, the compensating crucibles 51 corresponding to the same crystal type need to be divided into a crucible group, and finally multiple crucible groups are obtained.

[0053] Among them, the division operation of multiple crucible groups is mainly due to the different cultivation condition parameters corresponding to different crystal types. In order to facilitate the subsequent zoning cultivation in the spare cultivation area 3, it is necessary to group the target crucibles according to the crystal type in advance. For example, crucible group A, crucible group B, crucible group C and crucible group D are finally obtained, and the number of compensation crucibles 51 in each crucible group is 2, 3, 1, and 2 respectively; for the convenience of subsequent introduction, crucible group A can be recorded as [ a 1 ，a 2], crucible group B is denoted as [ b 1 ，b 2 ，b 3], the crucible group C is denoted as [ c 1], the crucible group D is denoted as [ d 1 ，d 2], where a 1 ，a 2 ，b 1 ，b 2 ，b 3 ，c 1 ，d 1 ，d 2 are the compensating crucibles 51 in each crucible group.

[0054] Step 2: divide the spare incubation area 3 into a plurality of compensation incubation areas according to the crucible groups, and determine the incubation condition parameters of each compensation incubation area according to the crystal type corresponding to each crucible group.

[0055] The compensation cultivation area refers to the area formed after the compensation crucible 51 of a crucible group is sent into the standby cultivation area 3; the cultivation condition parameters of each compensation cultivation area are the cultivation condition parameters of the crystal type corresponding to the crucible group.

[0056] Specifically, after confirming that the crucible group has been obtained, it is necessary to divide the spare cultivation area 3 into compensation cultivation areas according to parameters such as the number of crucible groups that can be accommodated and the number of compensation crucibles 51 included in each crucible group, so as to ensure that each crystal type has an independent growth space in the spare cultivation area.

[0057] In a preferred embodiment, the aforementioned step of "dividing the spare incubation area 3 into a plurality of compensation incubation areas according to the crucible group" specifically includes the following steps: Step R1, confirming the spare area to be divided in the spare cultivation area 3; the spare area to be divided is composed of the crucible stations 4 in the spare cultivation area 3 that are in an idle state; Specifically, when dividing the compensation cultivation area, it is necessary to confirm the crucible station 4 in the spare cultivation area 3 that is in an idle state. This is because the compensation crucible 51 may have been delivered to the spare cultivation area 3 in the early stage. Therefore, when dividing the spare cultivation area 3, it is necessary to confirm the crucible station 4 in an idle state, and then divide the corresponding compensation cultivation area, so as to ensure the rationality and accuracy of the division of the compensation cultivation area. The division of the compensation cultivation area can be referred to Figure 4 The area within the point line box.

[0058] Step R2, obtaining a target crucible combination from the crucible group according to the first compensation cultivation influencing parameter and the second compensation cultivation influencing parameter, wherein the number of compensation crucibles 51 included in the target crucible combination is not greater than the number of crucible stations to be divided into the spare area; Among them, the first compensating cultivation influencing parameter and the second compensating cultivation influencing parameter are the influencing parameters that need to be considered when dividing the compensating cultivation area; the first compensating cultivation influencing parameter can be understood as the basic influencing parameter, and is also the influencing parameter that must be considered when dividing the compensating cultivation area, which specifically includes: the number of compensating crucibles included in each crucible group and the number of crucible stations included in the spare area to be divided; the second compensating cultivation influencing parameter can be understood as the direct influencing parameter, and is also the influencing parameter that determines the compensating cultivation area division standard, which specifically includes: crucible station utilization rate, crystal priority, and the number of compensating cultivation areas. In actual selection, at least one of the second compensating cultivation influencing parameters can be selected to combine with the first compensating cultivation influencing parameter.

[0059] Furthermore, in practical applications, due to factors such as different crystal types and production cycle limitations, the selection of the second compensation cultivation influencing parameters may have different considerations at different stages. Therefore, based on different selections, the target crucible combination obtained is also different. Specifically, step A2 includes the following situations after expansion: (1) Case 1: The second compensation cultivation influencing parameter includes crystal priority; in this case, the compensation cultivation area can be divided into the spare area to be divided according to the number of compensation crucibles included in each crucible group, the number of crucible stations included in the spare area to be divided, and the crystal priority. For details, see the following steps: Step R2a1, sorting the crucible groups according to the crystal priority of the crystal type corresponding to each crucible group to obtain a first sequence; Since some crystals themselves require a more stringent growth environment and have relatively unique application fields, such as semiconductor devices or the energy field, such crystals are more suitable for cultivation in the crystal cultivation area 2, so the corresponding crystals have a lower priority in cultivation in the spare cultivation area 3. For example, the crystal priorities can be divided into level one, level two and level three, and there is at least one crystal type corresponding to each crystal priority level.

[0060] Specifically, all crucible groups may be sorted according to the crystal priority of the crystal type corresponding to each crucible group to obtain a first sequence.

[0061] Next, the aforementioned crucible group A, crucible group B, crucible group C and crucible group D are also used as examples for explanation. Assuming that the number of crucible stations included in the spare area to be divided is 3, the crystal priority of the crystal type corresponding to the current crucible group A is level 1, the crystal priority of the crystal type corresponding to the crucible group B and the crucible group C are both level 2, and the crystal priority of the crystal type corresponding to the crucible group D is level 3. At this time, we can obtain the following information in Table 1: Table 1 Data analysis table for case 1

[0062] At this time, the first sequence obtained is [A, B, C, D]. Since the levels of crucible group B and crucible group C are the same, the positions of the two groups in the first sequence can also be swapped, that is, [A, C, B, D]. Further, it can also be expressed as [ a 1 ，a 2 ，b 1 ，b 2 ， b 3 ，c 1 ，d 1 ，d 2] or [ a 1 ，a 2，c 1 ，b 1 ，b 2 ，b 3 ，d 1 ，d 2], it should be noted that the positions of the compensating crucibles 51 represented by the same letters here can be interchanged.

[0063] Step R2a2: select compensating crucibles from the first sequence in sequence as target compensating crucibles until the number of target compensating crucibles is equal to the number of crucible stations included in the spare area to be divided, and use all target compensating crucibles as a target crucible combination.

[0064] Specifically, since the number of crucible stations to be divided into the spare area is only 3 at this time, it is necessary to select the compensating crucible 51 as the target compensating crucible in sequence according to the order of the crucible groups in the first sequence until the number of selected compensating crucibles 51 is consistent with the number of crucible stations 4 in the spare area to be divided, and all selected target compensating crucibles are taken as a target crucible combination, so the final target crucible combination is Q1=[ a 1 ，a 2 ，b n ] or Q2=[ a 1 ，a 2 ， c 1], here b n Expressed as b 1 、b 2 or b One of 3.

[0065] (2) Case 2: The second compensation cultivation influencing parameter includes the crucible station utilization rate and the number of compensation cultivation areas; in this case, the compensation cultivation area can be divided into the spare area to be divided according to the number of compensation crucibles included in each crucible group, the number of crucible stations included in the spare area to be divided, the crucible station utilization rate and the number of compensation cultivation areas. For details, refer to the following steps: Step R2b1, obtaining a plurality of crucible sets according to the number of compensating crucibles included in each crucible group and the number of crucible stations included in the spare area to be divided; the total number of compensating crucibles included in the crucible set is not greater than the number of crucible stations in the spare area to be divided, and each crucible set includes at least one crucible group; Since the number of crucible stations in the spare area to be divided is limited, when the production cycle is relatively tight, it is necessary to divide the compensatory cultivation area based on the utilization rate of the crucible stations and the number of compensatory cultivation areas. This can save a certain amount of operation time and accelerate the completion of a certain type of crystal growth task through compensatory cultivation as much as possible, so as to facilitate the subsequent rapid development of new types of crystal cultivation.

[0066] Specifically, the above Table 1 is still used as an example for explanation. At this time, the number of crucible stations to be divided into spare areas is still only 3, so the available crucible sets include: a 1 ，a 2}、{ a 1 ，a 2 ，c 1}、{ b 1 ，b 2 ，b 3}、{ c 1}、{ c 1 ，d 1 ，d 2}、{ d 1 ，d 2}, the grouping is based on the number of compensating crucibles 51 in the complete crucible group, and is combined with other crucible groups to obtain a plurality of crucible sets whose total number of compensating crucibles 51 is not greater than the number of crucible stations in the spare area to be divided.

[0067] Step R2b2, selecting a crucible set with the highest crucible station utilization rate as an alternative crucible set and obtaining the number of compensation cultivation areas corresponding to each alternative crucible set; the number of compensation cultivation areas is equal to the number of crystal types included in the alternative crucible set; The crucible station utilization rate is calculated based on the total number of compensation crucibles 51 included in each crucible set and the number of crucible stations in the spare area to be divided; Specifically, a crucible set with the highest crucible station utilization rate is selected from multiple crucible sets as a candidate crucible set, and then the number of compensation cultivation areas is determined. Based on the above-obtained crucible sets, the final candidate crucible sets are: P1={ a 1 ，a 2 ，c 1}、P2={ b 1 ，b 2 ，b 3}、P3={ c 1 ，d 1 ，d 2}; Next, combine Figure 4 It can be seen that the number of compensation cultivation areas is used to represent the number of heat insulation plates 9 that need to be moved, that is, the number of independent crystal cultivation spaces that need to be divided, for example, Figure 4Four division situations A, B, B* and C are shown for the three crucible stations 4 in the spare area to be divided, among which B and B* both represent the situation that the number of compensatory incubation areas is 2, and A and C represent the situations that the number of compensatory incubation areas is 3 and 1, respectively; the number of compensatory incubation areas is essentially related to the number of crucible groups included in the alternative crucible set, in other words, it is the same as the number of crystal types contained in the alternative crucible set, so at this time, the numbers of compensatory incubation areas corresponding to the above three alternative crucible sets P1-P3 are 2, 1, and 2, respectively.

[0068] Step R2b3, taking the candidate crucible set with the smallest number of compensation incubation areas as the target crucible combination.

[0069] In order to further save operation time, the number of heat insulation plates 9 that need to be moved corresponding to the candidate crucible set with the smallest number of compensation cultivation areas is also smaller, so the aforementioned P2 can be selected as the target crucible combination.

[0070] In addition, due to the diversity of the influencing parameters of the second compensation cultivation, several other situations are briefly described below. In practical applications, technicians can design as needed, and no special limitation is made here.

[0071] (3) Case 3: The second compensation cultivation influencing parameter includes the crucible station utilization rate and the crystal priority. In this case, the compensation cultivation area can be divided according to the number of compensation crucibles included in each crucible group, the number of crucible stations included in the spare area to be divided, the crucible station utilization rate and the crystal priority. Combined with the above content, the first step of this step needs to execute step A2b1, and then obtain the crucible set: { a 1 ，a 2}、{ a 1 ，a 2 ，c 1}、{ b 1 ，b 2 ，b 3}、{ c 1}、{ c 1 ，d 1 ，d 2}、{ d 1 ，d 2}, then, the comprehensive crystal priority arrangement of each candidate crucible set is obtained, for example, the crucible set { a 1 ，a 2 ，c 1} The corresponding comprehensive crystal priority is two first-level and one third-level crystal priority; Crucible set { b 1 ，b 2 ，b3} The corresponding comprehensive crystal priority is the three secondary crystal priorities. After obtaining the crystal priority arrangement of each crucible set in turn, they are sorted to obtain the second sequence; finally, the step of "selecting compensation crucibles from the second sequence as target compensation crucibles in turn until the number of target compensation crucibles is equal to the number of crucible stations included in the spare area to be divided, and taking all target compensation crucibles as target crucible combinations" is executed.

[0072] Specifically, according to the crystal priority arrangement of each crucible set, the second sequence obtained is: [{ b 1 ，b 2 ，b 3},{ a 1 ，a 2 ，c 1},{ c 1 ，d 1 ，d 2}]; The specific sorting method of the above process is: assign a value to each crystal priority, the first level is assigned to 1, the second level is assigned to 2, and the third level is assigned to 3, and the elements of the same level in each crucible set are counted only once. For example, { b 1 ，b 2 ，b 3} This crucible set includes three elements of the same level (secondary), so the final corresponding cumulative score is 2; and { a 1 ，a 2 ，c 1} This crucible set has two elements of the same level (level one) and one level two element, so the final corresponding cumulative score is 3. After calculating the cumulative score of each crucible set in this way, we can get the second sequence by arranging them in order from low to high. The final target crucible combination is { b 1 ，b 2 ，b 3}, which is consistent with the target crucible combination obtained in case 2.

[0073] When the accumulated scores are the same, the crystal types with the highest crystal priority in each crucible set can be sorted again. For example, assuming that the crucible group D also includes a compensation crucible d 3, then { a 1 ，a 2 ，c 1} and { d 1 ，d 2 ，d 1} have a cumulative score of 3, but due to { a 1 ，a 2 ，c 1} contains the first-level crystal priority, so in the sorting { a 1， a 2 ，c 1} is further forward.

[0074] In addition, on the basis of the second sequence obtained above, the second compensation cultivation influencing parameter, namely the number of compensation cultivation areas, can be introduced, that is, the compensation cultivation areas are divided into spare areas according to the number of compensation crucibles included in each crucible group, the number of crucible stations included in the spare area to be divided, the utilization rate of the crucible stations, the crystal priority and the number of compensation cultivation areas; the specific steps are: when faced with the same cumulative points in the second sequence, the number of compensation cultivation areas of each spare crucible group is obtained, and the spare crucible sets with smaller numbers of compensation cultivation areas are arranged in front, so that for { a 1 ，a 2 ，c 1} and { d 1 ，d 2 ，d 1}, d 1 ，d 2 ，d 1} corresponds to 1, while { a 1 ，a 2 ， c 1} corresponds to 2 compensation cultivation areas, so at this time { d 1 ，d 2 ，d 1} will be closer to the front.

[0075] Step R3, dividing the spare area to be divided based on the number of compensation crucibles included in the target crucible combination and the crystal type, to obtain a plurality of compensation cultivation areas; After obtaining the target crucible combination, the spare area to be divided can be accurately divided according to the number of compensation crucibles 51 in the current target crucible combination and the crystal type. For example, the target crucible combination Q1 or Q2 needs to be divided into two compensation cultivation areas, while the target crucible combination P1 only needs to be divided into one compensation cultivation area. For specific division, please refer to Figure 4 Cases B and C shown.

[0076] In a preferred embodiment, after obtaining the target crucible combination from the crucible group according to the first compensation cultivation influencing parameter and the second compensation cultivation influencing parameter, the method further comprises: Step J1, presenting the second prompt information; The second prompt information includes: the number of crucible groups not included in the target crucible combination and the number of compensating crucibles in each current crucible group.

[0077] Specifically, it can be seen from the aforementioned content that since the number of crucible stations in the spare breeding area 3 is limited, if the number of compensating crucibles 51 is greater than the number of crucible stations to be divided into the spare area, a certain sorting or selection is required. Therefore, after obtaining the target crucible combination, it is also necessary to promptly inform the user of the compensating crucibles 51 that cannot be placed in the spare breeding area 3, that is, present a second prompt message to prompt the user to adjust the production plan as soon as possible.

[0078] In actual circumstances, if the production cycle is tight, you can choose to start a new crystal furnace for cultivation. If the production cycle is ample, you can control the crucible group that is not included in the target crucible combination to participate in the next target crucible combination selection. In other words, when the spare cultivation area 3 has an empty crucible station 4 again, it is necessary to re-divide the crucible group that was not included in the target crucible combination and the newly generated target crucible, and according to the updated crucible group, re-execute the step of dividing the spare cultivation area 3 into multiple compensation cultivation areas. No further details will be given here.

[0079] In a preferred embodiment, the combination Figure 1 and Figure 4 As can be seen from the above introduction to the crystal furnace 1, in the spare incubation area 3, an insulation board 9 movable along a first direction is provided between each two adjacent crucible stations 4, and the insulation board 9 is used to separate the crucible stations 4 to form a plurality of compensation incubation areas; here, the first direction is the vertical direction.

[0080] Further, step R3, based on the number of compensation crucibles and crystal types included in the target crucible combination, the spare area to be divided is divided to obtain multiple compensation cultivation areas, specifically including: Step R31, determining the number of compensation growth areas according to the number of crystal types included in the target crucible combination, and determining the number of compensation crucibles 51 included in each compensation growth area according to the number of compensation crucibles corresponding to each crystal type; The process of confirming the number of compensation cultivation areas here is the same as the aforementioned principle, which is essentially to obtain the number of crystal types contained in the target crucible combination; here continuing the aforementioned example, the number of compensation cultivation areas of the target crucible combination Q1 or Q2 is 2, while the number of compensation cultivation areas of the target crucible combination P1 is 1; in addition, when performing specific compensation cultivation area division, even if the number of compensation cultivation areas is the same, different area areas will be presented due to the different numbers of compensation crucibles corresponding to each crystal type, which can still be reflected in Figure 4. There are also two compensation cultivation areas, but the actual division is different, so it is also necessary to further confirm the number of compensation crucibles 51 included in each compensation area.

[0081] Step R32: determining a target heat shield for dividing a plurality of compensation growth areas based on the number of compensation growth areas and the number of compensation crucibles 51 included in each compensation growth area; Step R33, controlling the target heat insulation board to move until mutually isolated compensation cultivation areas are formed in the spare cultivation area 3.

[0082] Specifically, after obtaining the number of compensating incubation areas in the target crucible combination and the number of compensating crucibles 51 included in each compensating incubation area, it is equivalent to knowing the number of crucible stations in each divided compensating incubation area. Then, the position of the target insulation board used to separate the spare areas to be divided is also confirmed, and the driving component that controls the movement of the target insulation board can drive the target insulation board to move downward along the first direction to the furnace mouth, thereby obtaining a plurality of compensating incubation areas isolated from each other.

[0083] For example, Figure 5 The situation shown is briefly described, and each insulation board 9 is numbered on the top for ease of description. Assuming that the number of crucible stations in the spare area to be divided is 4, the final target crucible combination M={ a 1 ， a 2 ，d 1 ，d 2}, the number of compensation cultivation areas is 2, and the number of compensation crucibles included in each compensation cultivation area is also 2, then it corresponds to Figure 5 In the scenario M, the corresponding target heat shields are 01, 03 and 05. Now let's change the scenario and assume that the number of crucible stations in the spare area to be divided is still 4. The final target crucible combination N={ b 1 ， b 2 ，b 3 ，c 1}, the number of compensation cultivation areas is 2, but the number of compensation crucibles included in each compensation cultivation area is 3 ( b 1 ，b 2 ，b 3) and 1 ( c 1), then it corresponds to the scene N or scene N* in the figure, and the corresponding target insulation boards are 01, 04 and 05 or 01, 02 and 05.

[0084] It should be noted that after the movement of each target insulation board is completed, the crucible station 4 into which each compensating crucible 51 needs to be sent is also confirmed. Therefore, when placing the compensating crucible, it is also necessary to place it in sequence according to the divided compensating incubation areas, so that each pushing member 6 in the lifting assembly at the spare incubation area 3 can smoothly send each compensating crucible 51 to the corresponding crucible station 4.

[0085] In a preferred embodiment, the method further comprises: Step K1, obtaining the test results of each crystal in the spare cultivation area 3 in the consistency sampling test, and taking the crystal whose test result is less than the preset consistency threshold as the difference crystal; Among them, crystal consistency detection usually refers to analyzing the crystal structure of the current sample and comparing it with the known standard crystal structure to confirm the identity and purity of the sample crystal. Therefore, the consistency threshold is set based on each crystal type without any special limitation.

[0086] Specifically, since the spare cultivation area 3 relies on the insulation board 9 to divide the compensation cultivation area in order to obtain independent crystal growth spaces isolated from each other, some other problems will inevitably arise during the long-term cultivation process due to incomplete isolation or wear of parts, resulting in problems with the crystal growth environment in the spare cultivation area 3. In view of such a situation, it is necessary to subject the crystals cultivated in the spare cultivation area 3 to more stringent quality inspections.

[0087] In actual applications, the crystals grown in the spare cultivation area 3 and the crystal cultivation area 2 will be stored separately for independent consistency sampling and testing. Eventually, the test results of each crystal grown in the spare cultivation area 3 in the consistency sampling test can be obtained. If the test result of any crystal is found to be less than the corresponding preset consistency threshold, it will be recorded as a difference crystal.

[0088] Step K2: when the number of the difference crystals is greater than the preset number threshold, modify the cultivation condition parameters of the spare cultivation area 3 for cultivating the crystal type corresponding to the difference crystals.

[0089] Specifically, when the number of difference crystals is greater than the preset threshold, it reflects the status of the spare cultivation area 3 to some extent, so technical personnel are required to maintain the spare cultivation area 3 or further correct the cultivation condition parameters when the spare cultivation area 3 is used to cultivate the crystal type corresponding to the difference crystal.

[0090] Exemplarily, the preset number threshold can be selected within the range of 5-10, without any specific limitation; and the process of correcting the cultivation condition parameters can be simply understood as, when the number of difference crystals is greater than the preset number, the technicians discover through maintenance that the annular heating element 12 on the sides of each crucible station 4 in the spare cultivation area 3 has a slightly longer service life, resulting in its actual heating power being lower than the set heating power. Since the difference crystal is extremely dependent on the heating temperature, the actual heating temperature of the corresponding compensation crucible 51 during the cultivation process is relatively low and cannot meet the temperature required for its own production. At this time, the heating temperature within the cultivation condition parameters corresponding to the crystal type can be increased; of course, the annular heating element 12 can also be directly replaced. The specific operating methods need to be adjusted according to the actual situation and are not specifically limited here.

[0091] In a preferred embodiment, the method further comprises: Step L1, obtaining the trigger frequency of the first prompt information of all crucible stations 4 in each crystal growing area 2, when the trigger frequency is greater than the preset frequency threshold, a third prompt information is issued, the third prompt information is used to remind the user that the crucible station 4 has a failure risk.

[0092] Specifically, the triggering frequency of the first prompt information actually represents the number of faults or problems that occur in the corresponding crucible station 4. Based on long-term operation monitoring, by recording the triggering frequency of the first prompt information of each crucible station 4 and the triggering cause (including: crucible tilt, abnormal crystal heating temperature, etc.), a corresponding fault risk warning can be generated. Therefore, in an embodiment of the present invention, when the triggering frequency is greater than the preset frequency threshold (which can be set to 5 times or 7 times, etc., without specific limitation), a third prompt information can be issued to assist technical personnel in paying attention to the status of the crystal furnace in time and avoiding production stagnation due to faults in the crystal furnace 1.

[0093] Based on the above description, it can be known that an embodiment of the present invention proposes an operation monitoring method for a multi-station crucible crystal furnace, which specifically includes: obtaining the real-time growth parameters of the crystals in the crucibles 5 of each crystal cultivation area 2, and at the same time, taking the crucible 5 corresponding to the crystal whose real-time growth parameters do not conform to the corresponding preset crystal growth indicators as the target crucible, and issuing a first prompt message; then, starting the pusher 6 corresponding to the target crucible station to move the target crucible to the outside of the crystal furnace 1; entering the compensation crystal cultivation stage, according to the type of crystal cultivated by the target crucible, selecting the compensation crucible 51 and determining the cultivation condition parameters of the spare cultivation area 3, and according to the multiple compensation cultivation areas finally obtained, setting the compensation crucible 51 on the lifting assembly at the spare cultivation area 3, and sending it to the corresponding crucible station 4 in the spare cultivation area 3 for crystal cultivation through the pusher 6 corresponding to each compensation crucible 51.

[0094] According to the first aspect of the method, a plurality of crystal growing areas 2 and spare growing areas 3 are included in the crystal furnace 1, and independent growth parameter monitoring is performed in each area, so that the target crucible corresponding to the crystal that does not meet the preset crystal growth index can be accurately captured; secondly, in order to prevent it from affecting other crucible stations 4 in the same area, when the target crucible appears, it can be moved out of the crystal furnace 1 separately by independently starting the pusher 6 corresponding to the target crucible; thirdly, after the target crucible is moved out, in order to ensure the smooth implementation of the production plan, a compensation crucible 51 consistent with the crystal type cultivated by the target crucible will be selected, and crystal cultivation will be carried out on the corresponding crucible station 4 through the precise division of the compensation cultivation area; finally, in order to ensure the further smooth execution of the crystal quality and the production plan, the method also proposes the separate consistency detection of the corresponding crystals and the long-term risk monitoring of the crystal furnace, so that the quality of the crystal can be taken into account while ensuring the production efficiency.

[0095] The above description is only a preferred embodiment of the present invention and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present invention is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with the technical features with similar functions disclosed in the present invention (but not limited to) to form a technical solution.

Claims

1. A method for monitoring the operation of a multi-station crucible crystal furnace, characterized in that: The crystal furnace (1) comprises a plurality of independently arranged crystal cultivation areas (2) and a spare cultivation area (3), and each of the crystal cultivation areas (2) and the spare cultivation area (3) has at least two crucible stations (4), and the crucible stations (4) are used to place crucibles (5) for cultivating crystals; each of the crystal cultivation areas (2) and the spare cultivation area (3) is provided with a corresponding group of lifting components, and the lifting components comprise a plurality of pushers (6), and each of the pushers (6) corresponds to one of the crucible stations (4), and the pushers (6) of the same group of lifting components can operate synchronously or independently; The operation monitoring method comprises: Obtaining real-time growth parameters of the crystals in the crucibles (5) of each of the crystal growing areas (2); The crucible (5) corresponding to the crystal whose real-time growth parameter does not conform to the corresponding preset crystal growth index is used as a target crucible, and a first prompt information is issued; the first prompt information at least includes a target crucible position where the target crucible is located; Starting the pusher (6) corresponding to the target crucible position to move the target crucible to the outside of the crystal furnace (1); According to the type of crystal to be cultivated in the target crucible, a compensating crucible (51) is selected and cultivation condition parameters of the spare cultivation area (3) are determined, and the compensating crucible (51) is arranged on a lifting component at the spare cultivation area (3) so that the compensating crucible (51) enters the spare cultivation area (3) for crystal cultivation under the drive of the corresponding pushing member (6).

2. The operation monitoring method of the multi-station crucible crystal furnace according to claim 1, characterized in that: The lifting assembly comprises an air source (7) and a plurality of air paths (8) connected to the air source (7); each of the pushing members (6) is connected to one of the air paths (8) and is used to drive the pushing member (6) to move the crucible (5) when the corresponding air path (8) is connected; Starting the pusher (6) corresponding to the target crucible position where the target crucible is located to move the target crucible to the outside of the crystal furnace (1) specifically includes: Controlling the conduction of the gas path (8) corresponding to the target crucible station; The corresponding pushing member (6) is driven to drive the target crucible at the target crucible position to move in a direction away from the target crucible position to the outside of the crystal furnace (1).

3. The operation monitoring method of the multi-station crucible crystal furnace according to claim 1, characterized in that: According to the type of crystal to be cultivated in the target crucible, a compensation crucible (51) is selected and cultivation condition parameters of the spare cultivation area (3) are determined, specifically including: According to the type of crystal cultivated in the target crucible, a compensating crucible (51) is selected and the compensating crucible (51) is divided into a plurality of crucible groups; each of the crucible groups comprises at least one compensating crucible (51) for cultivating the same type of crystal; According to the crucible group, the spare incubation area (3) is divided into a plurality of compensation incubation areas, and the incubation condition parameters of each compensation incubation area are determined according to the crystal type corresponding to each crucible group.

4. The operation monitoring method of the multi-station crucible crystal furnace according to claim 3, characterized in that: According to the crucible group, the spare cultivation area (3) is divided into a plurality of compensation cultivation areas, specifically including: Confirming a spare area to be divided in the spare cultivation area (3); the spare area to be divided is composed of crucible stations (4) in an idle state in the spare cultivation area (3); A target crucible combination is obtained from the crucible group according to the first compensation cultivation influencing parameter and the second compensation cultivation influencing parameter, wherein the number of the compensation crucibles (51) included in the target crucible combination is not greater than the number of crucible stations (4) in the spare area to be divided; wherein the first compensation cultivation influencing parameter includes the number of compensation crucibles (51) included in each crucible group and the number of crucible stations (4) included in the spare area to be divided; and the second compensation cultivation influencing parameter includes at least one of crucible station utilization rate, crystal priority, and the number of compensation cultivation areas; Based on the number of compensating crucibles (51) included in the target crucible combination and the type of crystal, the spare area to be divided is divided to obtain a plurality of the compensating cultivation areas.

5. The operation monitoring method of the multi-station crucible crystal furnace according to claim 4, characterized in that: When the second compensation cultivation influencing parameter includes crystal priority; Obtaining a target crucible combination from the crucible group according to the first compensation cultivation influence parameter and the second compensation cultivation influence parameter specifically includes: Sorting the crucible groups according to the crystal priority of the crystal type corresponding to each crucible group to obtain a first sequence; Compensating crucibles (51) are selected in sequence from the first sequence as target compensating crucibles until the number of the target compensating crucibles is equal to the number of crucible workstations (4) included in the spare area to be divided, and all the target compensating crucibles are used as the target crucible combination.

6. The operation monitoring method of a multi-station crucible crystal furnace according to claim 4, characterized in that: When the second compensation cultivation influencing parameter includes the crucible station utilization rate and the number of compensation cultivation areas; Obtaining a target crucible combination from the crucible group according to the first compensation cultivation influence parameter and the second compensation cultivation influence parameter specifically includes: According to the number of compensating crucibles (51) included in each of the crucible groups and the number of crucible workstations (4) included in the spare area to be divided, a plurality of crucible sets are obtained; the total number of compensating crucibles (51) included in the crucible set is not greater than the number of crucible workstations (4) in the spare area to be divided, and each of the crucible sets includes at least one crucible group; Selecting the crucible set with the highest crucible station utilization rate as the candidate crucible set and obtaining the number of compensation cultivation areas corresponding to each candidate crucible set; the number of compensation cultivation areas is equal to the number of crystal types included in the candidate crucible set; The candidate crucible set with the smallest number of the compensatory incubation areas is used as the target crucible combination.

7. The operation monitoring method of a multi-station crucible crystal furnace according to claim 5 or 6, characterized in that: After obtaining a target crucible combination from the crucible group according to the first compensation cultivation influencing parameter and the second compensation cultivation influencing parameter, the method further includes: Presenting a second prompt message; The second prompt information comprises: the number of the crucible groups not included in the target crucible combination and the number of the compensating crucibles (51) currently in each of the crucible groups.

8. The operation monitoring method of a multi-station crucible crystal furnace according to claim 5 or 6, characterized in that: In the standby incubation area (3), a heat insulation board (9) movable along a first direction is provided between each two adjacent crucible stations (4), and the heat insulation board (9) is used to separate the crucible stations (4) to form a plurality of compensation incubation areas; Based on the number of compensating crucibles (51) included in the target crucible combination and the type of crystal, the spare area to be divided is divided to obtain a plurality of compensating cultivation areas, specifically including: Determining the number of the compensation growth areas according to the number of crystal types included in the target crucible combination, and determining the number of compensation crucibles (51) included in each compensation growth area according to the number of compensation crucibles (51) corresponding to each crystal type; Based on the number of the compensation incubation areas and the number of compensation crucibles (51) included in each compensation incubation area, determining a target heat shield for dividing the plurality of compensation incubation areas; The target heat insulation board is controlled to move until the mutually isolated compensation cultivation areas are formed in the standby cultivation area (3).

9. The operation monitoring method of a multi-station crucible crystal furnace according to claim 1, characterized in that: The method also includes: Obtaining the test results of the crystals in the spare cultivation area (3) in the consistency sampling test, and taking the crystals whose test results are less than a preset consistency threshold as difference crystals; When the number of the difference crystals is greater than a preset number threshold, the cultivation condition parameters of the spare cultivation area (3) used to cultivate the crystal type corresponding to the difference crystals are modified.

10. A multi-station crucible crystal furnace, characterized in that: The operation monitoring method for a multi-station crucible crystal furnace according to any one of claims 1 to 9, wherein the crystal furnace (1) comprises: A crystal furnace body (11), wherein a plurality of crystal cultivation areas (2) and a spare cultivation area (3) are independently arranged in the crystal furnace body (11); each of the crystal cultivation areas (2) and the spare cultivation area (3) is provided with a crystal cultivation component; The crystal cultivation assembly comprises: a plurality of independently arranged temperature-averaging tubes (10); a crucible station (4) is formed in each of the temperature-averaging tubes (10), and an annular heating element (12) is arranged outside the temperature-averaging tube (10) for heating the crucible (5) in the crucible station (4); A lifting assembly, wherein the lifting assembly is provided with a plurality of groups, and each group of lifting assemblies is respectively provided in one-to-one correspondence with the spare cultivation area (3) and the plurality of crystal cultivation areas (2); the lifting assembly comprises: a plurality of pushing members (6), each of the pushing members (6) being respectively provided in correspondence with each of the crucible stations (4) in the corresponding cultivation area, and being used for sending the crucible (5) into or out of the crucible station (4).

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