Gallium oxide single crystal dislocation characterization method based on mechanical exfoliation

Abstract

The invention provides a gallium oxide single crystal dislocation characterization method based on mechanical exfoliation, which comprises the following steps: cutting a gallium oxide single crystal to obtain a polygonal single crystal sample; a tool with a sharp and hard surface is used for aligning the vertex angle of the single crystal sample, stripping is carried out along the gallium oxide cleavage surface, the mechanical stripping path is that the whole layer of surface extends towards the center along the vertex angle, and the whole layer of surface is completely stripped to obtain a clean and flat single crystal surface; carrying out surface activation pre-corrosion on the mechanically stripped single crystal; after ultrasonic cleaning, a sample is directly treated by a chemical corrosion method, and dislocation characterization of the gallium oxide single crystal is realized by analyzing the morphology and distribution of corrosion pits. The surface of the sample is processed by adopting a mechanical stripping method, a clean, flat and high-quality single crystal surface is obtained and is directly used for chemical corrosion method treatment to observe single crystal dislocation characteristics, multiple processing steps of the sample before chemical corrosion method treatment are simplified, and an efficient and feasible technical scheme is provided for gallium oxide single crystal dislocation characterization.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and in particular to a method for characterizing dislocations of a gallium oxide single crystal based on mechanical peeling. Background Art

[0002] Gallium oxide (Ga2O3) is an optimal semiconductor material for manufacturing high-temperature, high-frequency, high-power microelectronic devices, solar-blind ultraviolet photodetectors, and ultraviolet transparent conductive electrodes. However, gallium oxide single crystals have high hardness, great brittleness, and obvious anisotropy. They are easily cleaved and broken during processing, making them a typical difficult-to-process material.

[0003] Although ultra-precision grinding has the advantages of good surface quality, high precision and high efficiency, a certain degree of damage will be caused to the surface layer during the grinding process of single-crystal gallium oxide, which will damage the surface quality and affect the subsequent testing and characterization of the sample. Generally, the processing flow for gallium oxide single crystal test samples mainly includes cutting, thinning and polishing; due to the material characteristics of gallium oxide single crystals, it determines that it has high requirements for processing equipment and process conditions, which not only increases the test cost and time, but also the cumbersome processing steps will increase the possibility of damage to the sample surface.

[0004] In the prior art, surface chemical etching is a common method for evaluating the crystal quality of single crystal materials. By observing the morphology of surface corrosion pits, the crystal defect characteristics can be further analyzed; by counting the number of corrosion pits, the dislocation density of the material can be quantitatively analyzed. However, the factors that affect the morphology and number of sample corrosion pits are not only related to the corrosion conditions (such as corrosion solution, corrosion temperature and time, etc.), but are also limited by the surface quality of the material itself. Samples used for surface chemical etching treatment are required to have a flat and smooth surface, no pollution and no damage. The cumbersome processing of the sample surface can easily introduce surface damage. In the process of chemical etching, corrosion pits are formed by processing defects, which will lead to misjudgment of the morphology and type of corrosion pits caused by dislocations, which is not conducive to the accurate identification of corrosion pits related to dislocation defects.

[0005] Therefore, there is an urgent need in the art to simplify the processing flow of single crystal samples and quickly obtain high-quality sample surfaces for chemical corrosion treatment of sample surfaces and subsequent testing and analysis, thereby improving test efficiency and accuracy. Based on this, the present invention provides a new method for characterizing dislocations in gallium oxide single crystals based on mechanical exfoliation. Summary of the invention

[0006] Based on the above description, the present invention provides a method for characterizing dislocations in a gallium oxide single crystal based on mechanical exfoliation to solve the technical problems of existing crystal processing methods, such as high processing difficulty, long processing time, easy introduction of processing-induced surface damage, and hindrance to subsequent testing and analysis.

[0007] The technical solution of the present invention to solve the above technical problems is as follows: The present invention provides a method for characterizing dislocations of a gallium oxide single crystal based on mechanical exfoliation, comprising the following steps: S1. Cutting the gallium oxide single crystal to obtain a polygonal single crystal sample; S2. Using a tool with a sharp and hard surface, align the top corner of the single crystal sample and perform mechanical peeling along the cleavage plane of gallium oxide. The path of the mechanical peeling is to extend from the top corner of the single crystal sample to the center, completely peeling the entire surface layer to obtain a clean and flat single crystal surface; S3, performing surface activation treatment and pre-corrosion on the single crystal sample after mechanical peeling in step S2; S4. Directly subjecting the sample obtained in step S3 to chemical etching to form corrosion pits, and analyzing the morphology and distribution of the corrosion pits to achieve dislocation characterization of the gallium oxide single crystal.

[0008] Based on the above technical solution, the present invention can also be improved as follows.

[0009] Furthermore, step S1 specifically includes the following steps: S101, cutting the gallium oxide single crystal into small pieces of 1 cm×1 cm square by a wire saw; S102. The cut samples are ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water in sequence, and blown dry with high-purity nitrogen to obtain clean and dry single crystal samples.

[0010] Furthermore, step S2 specifically includes the following steps: S201, using a clean utility knife as a stripping tool, aligning the blade of the utility knife with the top corner of the single crystal sample along the parallel direction of the cleavage plane of gallium oxide, and tilting the blade to perform physical and mechanical stripping; S202, under the action of external force, along the cleavage plane of gallium oxide, the peeling process extends from the top corner to the center position, and the surface gallium oxide begins to cleave in layers; S203, observing the surface peeling condition, slowly moving the blade along the top angle toward the center, reducing the force and maintaining uniformity, until a large area of ​​the gallium oxide surface is cleaved; S204. If the entire surface layer cannot be peeled off at one time, repeat steps S201 to S203 until the entire surface layer can be completely peeled off to obtain a 1 cm×1 cm clean and flat single crystal surface.

[0011] Furthermore, the cleavage plane of the gallium oxide is a (100) plane and / or a (001) plane.

[0012] Furthermore, step S3 specifically includes the following steps: S301, using a highly corrosive chemical reagent to activate the surface of the single crystal after mechanical peeling to enhance the surface activity; S302, corrosion pretreatment at 30-35 °C for 5-10 minutes; S303, the samples after corrosion pretreatment are ultrasonically cleaned with anhydrous ethanol and deionized water, and blown dry with high-purity nitrogen to remove residual hydrogen fluoride solution on the sample surface.

[0013] Furthermore, step S301 specifically includes: Place 10% hydrogen fluoride (HF) in a polytetrafluoroethylene (PTFE) container and place it in a water bath at 30-35°C; Under the condition of 300~400 r / min magnetic stirring, the mechanically exfoliated single crystal was placed in a hydrogen fluoride (HF) solution.

[0014] Furthermore, step S4 specifically includes the following steps: S401, heating the corrosion solution to a molten state; S402, placing the sample treated in step S3 in a corrosion solution, keeping the heating temperature of step S401 unchanged, and the corrosion time is 1.5 to 2 hours; S403, after the corrosion is completed, the sample is taken out, ultrasonically cleaned with anhydrous ethanol and deionized water in sequence, and blown dry with high-speed nitrogen; S404, after the gallium oxide single crystal sample is dried, the morphology of the corrosion pits of the gallium oxide single crystal is observed with a laser confocal microscope to obtain the dislocation characteristics of the gallium oxide single crystal.

[0015] Furthermore, the corrosion solution is an acidic solution or an alkaline solution.

[0016] Further, when the corrosion solution is an acidic solution, the corrosion solution is mainly phosphoric acid (H3PO4); The etching solution is an alkaline solution, and the etching solution is mainly potassium hydroxide (KOH) or sodium hydroxide (NaOH) or a mixture of the two.

[0017] Compared with the prior art, the technical solution of this application has the following beneficial technical effects: The method for characterizing dislocations of a gallium oxide single crystal based on mechanical stripping provided by the present invention utilizes the cleavage characteristics of the gallium oxide single crystal to strip the gallium oxide along the cleavage plane direction. The gallium oxide is layered in cleavage. Through mechanical stripping, the surface layer with impurity contamination and defects can be directly removed in layers, and the surface of the newly obtained sample is clean and flat with little surface damage. Pre-corrosion and surface activation treatment are added to enhance surface activity and improve the chemical corrosion effect. At this time, the sample is further subjected to corrosion treatment to facilitate observation of the morphology and number of corrosion pits.

[0018] That is, the mechanical stripping method is used to directly perform surface processing on the test sample of gallium oxide single crystal, so as to obtain a clean, flat, high-quality single crystal surface, which can be directly used for chemical etching treatment to observe the dislocation characteristics of the single crystal, greatly simplifying the previous multiple processing steps before chemical etching treatment, which provides an efficient and feasible technical solution for the dislocation characterization of gallium oxide single crystals.

[0019] Compared with the prior art, the present invention has the following beneficial effects: (1) The surface processing steps of gallium oxide single crystals are greatly simplified, which minimizes the surface damage caused by cumbersome processing procedures, improves the surface processing efficiency and the accuracy of observing the surface morphology of gallium oxide single crystals by chemical etching, and further reduces the impact of processing defects on test results.

[0020] (2) Adding a pretreatment step before corrosion, by performing surface activation treatment and pre-corrosion on the single crystal sample after mechanical peeling, can enhance its surface activity and help improve the corrosion effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of a method for characterizing dislocations in a gallium oxide single crystal based on mechanical exfoliation provided in an embodiment of the present invention; Figure 2 A schematic flow chart of a method for characterizing dislocations in a gallium oxide single crystal based on mechanical exfoliation provided in an embodiment of the present invention; Figure 3 The surface morphology of the sample obtained by the method for characterizing dislocations of a gallium oxide single crystal based on mechanical exfoliation provided in an embodiment of the present invention after chemical etching (a), and the surface morphology of the sample after chemical etching after conventional grinding and polishing treatment (b). DETAILED DESCRIPTION

[0022] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0023] In the prior art, before dislocation characterization, conventional sample processing is to use multiple processing methods such as cutting, thinning and polishing to process gallium oxide single crystals to obtain a clean and flat test surface. The problem is that gallium oxide single crystals have high hardness, high brittleness, obvious anisotropy, and are easy to cleave and break during processing, making them typical difficult-to-process materials. When using processing methods such as thinning and polishing, not only is the processing difficult and time-consuming, but it is also easy to introduce surface damage caused by processing, which is not useful for subsequent testing and analysis.

[0024] The invention provides a novel method for characterizing dislocation of a gallium oxide single crystal based on mechanical exfoliation.

[0025] The following embodiments of the present invention are further described in detail in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention but cannot be used to limit the scope of the present invention.

[0026] like Figure 1 As shown, the method for characterizing dislocations of a gallium oxide single crystal based on mechanical exfoliation provided in this embodiment includes: Step S1, cutting the gallium oxide single crystal to obtain a polygonal single crystal sample.

[0027] Specifically, step S1 specifically includes: Step S101, in a specific example, a gallium oxide single crystal is cut into small pieces of 1 cm×1 cm square by a wire saw.

[0028] Step S102: ultrasonically clean the cut samples using acetone, anhydrous ethanol, and deionized water in sequence, and blow dry with high-purity nitrogen to obtain clean and dry single crystal samples.

[0029] Step S2: Use a tool with a sharp and hard surface to align the top corner of the single crystal sample and perform mechanical peeling along the cleavage plane of gallium oxide. The mechanical peeling path extends from the top corner of the single crystal sample to the center, completely peeling the entire surface layer to obtain a clean and flat single crystal surface.

[0030] Specifically, step S2 specifically includes: Step S201: Use a clean utility knife as a stripping tool, align the blade of the utility knife with the top corner of the single crystal sample along the parallel direction of the cleavage plane of gallium oxide, and tilt the blade to perform physical and mechanical stripping.

[0031] Step S202: Under the action of external force, the surface gallium oxide begins to cleave in layers along the cleavage plane extending from the top corner to the center.

[0032] Step S203, observing the surface peeling condition, slowly moving the blade along the top angle toward the center, reducing the force and maintaining uniformity, until a large area of ​​the gallium oxide surface is cleaved.

[0033] Step S204: If the entire surface layer cannot be peeled off at one time, repeat steps S201 to S203 until the entire surface layer can be completely peeled off to obtain a 1 cm×1 cm clean and flat single crystal surface.

[0034] It should be noted that the cleavage plane of gallium oxide in this embodiment is the (100) plane and / or the (001) plane, which plane can be selected according to actual needs.

[0035] Step S3, activating and pre-etching the surface of the single crystal after mechanical peeling in step S2.

[0036] Specifically, step S3 specifically includes: Step S301: Use a highly corrosive chemical reagent to activate the surface of the single crystal after mechanical peeling to enhance the surface activity.

[0037] Step S302, performing corrosion pretreatment at 30-35°C for 5-10 minutes; Step S303: ultrasonically clean the sample after corrosion pretreatment using anhydrous ethanol and deionized water, and blow dry with high-purity nitrogen gas to remove residual hydrogen fluoride solution on the sample surface.

[0038] Wherein, step S301 specifically includes: Place 10% hydrogen fluoride (HF) in a polytetrafluoroethylene (PTFE) container and place it in a water bath at 30-35°C; Under the condition of 300~400 r / min magnetic stirring, the single crystal after mechanical exfoliation was placed in HF solution.

[0039] Step S4: directly subjecting the sample obtained in step S3 to chemical etching to form corrosion pits, and analyzing the morphology and distribution of the corrosion pits to achieve dislocation characterization of the gallium oxide single crystal.

[0040] Specifically, step S4 specifically includes the following steps: S401, heating the corrosion solution to a molten state.

[0041] Here, the etching solution is an acidic solution or an alkaline solution.

[0042] Specifically, in actual operation, when the corrosion solution is an acidic solution, the corrosion solution is mainly phosphoric acid (H3PO4); when the corrosion solution is an alkaline solution, the corrosion solution is mainly potassium hydroxide (KOH) or sodium hydroxide (NaOH) or a mixture of the two.

[0043] S402, placing the sample processed in step S3 in a corrosion solution, keeping the heating temperature of step S401 unchanged, and the corrosion time is 1.5 to 2 hours.

[0044] S403. After the corrosion is completed, the sample is taken out, ultrasonically cleaned with anhydrous ethanol and deionized water in turn, and blown dry with high-speed nitrogen.

[0045] S404, after the gallium oxide single crystal sample is dried, the morphology and distribution of the corrosion pits of the gallium oxide single crystal are observed using a laser confocal microscope to obtain the dislocation characteristics of the gallium oxide single crystal.

[0046] In a specific example, combining Figure 2 , further introduces the specific operation of the above-mentioned method for characterizing dislocations in gallium oxide single crystals based on mechanical exfoliation: 1. Gallium oxide single crystal processing Step 1.1: Cut the gallium oxide single crystal into small square pieces with a size of 1 cm × 1 cm by wire cutting to facilitate subsequent sample processing and test characterization.

[0047] Step 1.2: Clean the surface of the cut sample.

[0048] Specifically, acetone, anhydrous ethanol, and deionized water are used for ultrasonic cleaning in sequence, and high-purity nitrogen is blown dry to obtain a clean and dry single crystal sample.

[0049] 2. Mechanical exfoliation of gallium oxide single crystals Step 2.1: Use a clean utility knife as a peeling tool. For the square gallium oxide single crystal obtained in step 1.1, place the blade of the utility knife at a certain top corner of the square sample along the parallel direction of the gallium oxide cleavage plane (here, the (100) plane is selected), tilt the blade slightly, and apply force evenly.

[0050] Step 2.2: Affected by external force, the peeling path extends from the top corner to the center position along the gallium oxide cleavage plane, and the surface gallium oxide begins to cleave in layers.

[0051] It should be noted that in order to ensure the flatness of the surface after peeling, a large area of ​​whole layer peeling needs to be achieved.

[0052] Step 2.3: Observe the surface peeling condition, and move the blade slowly from the top corner to the center, reducing the force and maintaining uniformity, so that a large area of ​​the gallium oxide surface is cleaved.

[0053] If the entire surface layer cannot be peeled off in one go in step 2.4, repeat steps 2.1 to 2.3 until the entire surface layer can be completely peeled off to obtain a new 1 cm × 1 cm clean and flat surface.

[0054] Step 2.5: Clean the surface of the sample after mechanical peeling.

[0055] Specifically, anhydrous ethanol and deionized water are used for ultrasonic cleaning and high-purity nitrogen is blown dry in sequence to obtain a clean and dry peeled sample.

[0056] 3. Preprocessing Step 3.1 Before treating the gallium oxide single crystal material by chemical etching, first activate the surface with a specific chemical reagent to enhance the surface activity and improve the chemical etching effect.

[0057] Specifically, 10% hydrogen fluoride (HF) is placed in a polytetrafluoroethylene (PTFE) container and placed in a water bath at a temperature of 30-35° C. The sample after mechanical stripping in step 2 is placed in the HF solution under a magnetic stirring condition of 300-400 r / min.

[0058] Step 3.2: Carry out corrosion pretreatment at 30°C for 5 minutes.

[0059] Step 3.3: After corrosion pretreatment, the sample is ultrasonically cleaned with anhydrous ethanol and deionized water, and blown dry with high-purity nitrogen to remove the residual HF solution on the sample surface.

[0060] 4.4 Chemical corrosion treatment The gallium oxide material is subjected to chemical etching treatment, and the etching solution can be either an acidic solution or an alkaline solution. In this example, an alkaline solution is used as an example.

[0061] Step 4.1: Select a KOH solution with a mass fraction of 30% as the corrosion solution, place it on a heating table, and heat it to 150°C. The KOH solution is in a molten state.

[0062] Step 4.2: Place the sample pretreated in step 3 in a molten KOH solution, keep the temperature of the heating platform unchanged, and the corrosion time is 2 hours.

[0063] Step 4.3 After etching is completed, take out the sample, ultrasonically clean it with anhydrous ethanol and deionized water respectively, and then blow it dry with high-speed nitrogen.

[0064] Step 4.4 After the gallium oxide single crystal sample is dried, the corrosion pits are observed using a laser confocal microscope.

[0065] Figure 3 (a) shows the morphology of the corrosion pits obtained by KOH corrosion on the (100) surface of the gallium oxide single crystal in the embodiment of the present invention after mechanical peeling and pretreatment. By counting the number of corrosion pits, the dislocation density of the gallium oxide single crystal is 4.3×10 4 cm -2 ; Figure 3 (b) shows the morphology of the corrosion pits obtained by KOH corrosion after the (100) surface of the gallium oxide single crystal was ground and polished (existing technology). It can be obtained that the dislocation density is 10 5 cm -2 By comparing with the attached figures, it can be seen that the etch pit morphology obtained in the present application is clearer, which can effectively reduce the surface damage caused by processing defects and more accurately and efficiently characterize the dislocation characteristics of gallium oxide single crystals.

[0066] In summary, this embodiment provides a method for characterizing dislocations of gallium oxide single crystals based on mechanical stripping. The gallium oxide is stripped along the cleavage plane direction by utilizing the cleavage characteristics of the gallium oxide single crystal, and the gallium oxide is cleaved in layers; through mechanical stripping, the surface layer with impurity contamination and defects can be directly removed layer by layer, and the surface of the newly obtained sample is clean and flat, and the surface damage is small; and pre-corrosion and surface activation treatment are added to enhance the surface activity and improve the chemical corrosion effect; at this time, the chemical corrosion method is used to facilitate the observation of the morphology and number of corrosion pits for dislocation characterization. This method is simple and effective, and can effectively save the processing flow before the corrosion treatment of the gallium oxide single crystal sample, minimize the surface damage caused by the processing, and improve the surface treatment efficiency and the accuracy of observing the surface morphology of the gallium oxide single crystal by chemical corrosion.

[0067] In the description of this specification, the description with reference to the terms "specific example" or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the embodiments of the present invention. In this specification, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory.

[0068] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for characterizing dislocations in gallium oxide single crystals based on mechanical exfoliation, characterized in that: The following steps are involved: S1. Cutting the gallium oxide single crystal to obtain a polygonal single crystal sample; S2. Using a tool with a sharp and hard surface, align the top corner of the single crystal sample and perform mechanical peeling along the cleavage plane of gallium oxide. The path of the mechanical peeling is to extend from the top corner of the single crystal sample to the center, completely peeling the entire surface layer to obtain a clean and flat single crystal surface; S3, performing activation treatment and pre-etching on the surface of the single crystal after mechanical peeling in step S2; S4. Directly subjecting the sample obtained in step S3 to chemical etching to form corrosion pits, and analyzing the morphology and distribution of the corrosion pits to achieve dislocation characterization of the gallium oxide single crystal.

2. The method for characterizing dislocations of gallium oxide single crystals based on mechanical exfoliation according to claim 1, characterized in that: Step S1 specifically includes the following steps: S101, cutting the gallium oxide single crystal into small pieces of 1 cm×1 cm square by a wire saw; S102. The cut samples are ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water in sequence, and blown dry with high-purity nitrogen to obtain clean and dry single crystal samples.

3. The method for characterizing dislocations of gallium oxide single crystals based on mechanical exfoliation according to claim 2, characterized in that: Step S2 specifically includes the following steps: S201, using a clean utility knife as a stripping tool, aligning the blade of the utility knife with the top corner of the single crystal sample along the parallel direction of the gallium oxide cleavage plane, and tilting the blade to perform physical and mechanical stripping; S202, under the action of external force, the cleavage plane of the gallium oxide extends from the top corner to the center, and the surface gallium oxide begins to cleave in layers; S203, observing the surface peeling condition, slowly moving the blade along the top angle toward the center, reducing the force and maintaining uniformity, until a large area of ​​the gallium oxide surface is cleaved; S204. If the entire surface layer cannot be peeled off at one time, repeat steps S201 to S203 until the entire surface layer can be completely peeled off to obtain a 1 cm×1 cm clean and flat single crystal surface.

4. The method for characterizing dislocations of gallium oxide single crystals based on mechanical exfoliation according to claim 3, characterized in that: The cleavage plane of the gallium oxide is a (100) plane and / or a (001) plane.

5. The method for characterizing dislocations in a gallium oxide single crystal based on mechanical exfoliation according to claim 1, characterized in that: Step S3 specifically includes the following steps: S301, using a highly corrosive chemical reagent to activate the surface of the single crystal after mechanical peeling to enhance the surface activity; S302, corrosion pretreatment at 30-35 °C for 5-10 minutes; S303, the samples after corrosion pretreatment are ultrasonically cleaned with anhydrous ethanol and deionized water, and blown dry with high-purity nitrogen to remove residual hydrogen fluoride solution on the sample surface.

6. The method for characterizing dislocations in a gallium oxide single crystal based on mechanical exfoliation according to claim 5, characterized in that: Step S301 specifically includes: Place 10% hydrogen fluoride in a polytetrafluoroethylene container and place it in a water bath at 30-35°C; Under the condition of 300~400 r / min magnetic stirring, the single crystal after mechanical exfoliation was placed in a hydrogen fluoride solution.

7. The method for characterizing dislocations in a gallium oxide single crystal based on mechanical exfoliation according to claim 1, characterized in that: Step S4 specifically includes the following steps: S401, heating the corrosion solution to a molten state; S402, placing the sample treated in step S3 in a corrosion solution, keeping the heating temperature of step S401 unchanged, and the corrosion time is 1.5 to 2 hours; S403, after the corrosion is completed, the sample is taken out, ultrasonically cleaned with anhydrous ethanol and deionized water in sequence, and blown dry with high-speed nitrogen; S404, after the gallium oxide single crystal sample is dried, the morphology and distribution of the corrosion pits of the gallium oxide single crystal are observed using a laser confocal microscope to obtain the dislocation characteristics of the gallium oxide single crystal.

8. The method for characterizing dislocations of gallium oxide single crystals based on mechanical exfoliation according to claim 7, characterized in that: The corrosive solution is an acidic solution or an alkaline solution.

9. The method for characterizing dislocations in a gallium oxide single crystal based on mechanical exfoliation according to claim 8, characterized in that: When the corrosive solution is an acidic solution, the corrosive solution is mainly phosphoric acid; The corrosion solution is an alkaline solution, and the corrosion solution is mainly potassium hydroxide or sodium hydroxide or a mixture of the two.

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