Rapid high-temperature test method for power semiconductor

Abstract

The invention belongs to the related technical field of integrated circuit testing, and discloses a rapid high-temperature testing method for a power semiconductor, which comprises the following steps: drawing a voltage drop-internal junction temperature relation curve of a diode in a device; drawing an internal junction temperature-surface shell temperature relation curve of the device; establishing a relation model among the pressure drop, the internal junction temperature and the surface shell temperature; applying preset heating voltage and test current to a test object, monitoring the voltage drop of an internal diode in real time, and calculating according to the relation model to obtain corresponding internal junction temperature and surface shell temperature; and when the internal junction temperature and the surface shell temperature reach target values, immediately stopping applying the heating voltage and current, and simultaneously carrying out electrical parameter testing on a test object. According to the invention, the accuracy and efficiency of the whole test process can be obviously improved, the test condition is closer to the actual working state, the test cost is reduced, and more reliable data support can be provided for the design and application of the power semiconductor.

Description

Technical Field

[0001] The present invention belongs to the technical field related to integrated circuit testing, and more specifically, relates to a rapid high-temperature testing method for power semiconductors. Background Art

[0002] At present, the testing and experimentation of power semiconductors usually requires high temperature testing to verify their performance under maximum load and maximum allowable operating temperature. In the prior art, the usual testing method is to place the power semiconductor in a high temperature oven, heat it to a set temperature through the oven, and in order to ensure that the internal junction temperature reaches the set value, it needs to be stabilized in the oven for a period of time, and then taken out for rapid testing.

[0003] However, further research shows that the above-mentioned existing technologies still have the following defects or shortcomings: since the temperature chamber heats up slowly and requires a long stabilization time, which usually takes more than half an hour in the industry, this leads to low test efficiency; in addition, there is often a temperature gradient in the temperature chamber heating process, which causes the subsequent high-temperature test structure to deviate from the actual results, etc.

[0004] In order to realize the rapid high-temperature test of semiconductors, CN201410134465.6 proposes a method for controlling the gate of the device to be tested by PWM to realize the short circuit of the device and then quickly heat up the temperature. The method derives the difference of the device temperature rise through the heat formula generated by the semiconductor per unit area, thereby estimating the temperature of the semiconductor after being heated by an external power supply. However, the formula described in this method is only a theoretical calculation formula for the temperature rise, and does not take into account the differences in the thermal resistance of the specific chip and the differences in the test environment such as whether there is air conditioning. At the same time, since the device is also a heat dissipation process during the heating process, the longer the PWM heating time is, the more heat is dissipated. This method uses a method based on theoretical calculation to obtain the PWM control waveform and time, and does not know whether the temperature of the device after actual heating is sufficient or exceeds the temperature tolerance range of the device, etc. Therefore, this method cannot accurately solve the problem of rapid and high-speed testing of semiconductors.

[0005] In order to accurately obtain the current junction temperature and shell temperature of the semiconductor, it is usually measured by placing a temperature sensor close to the surface of the semiconductor device. There are also methods to obtain the junction temperature of the device through internal diode testing. For example, US2019 / 0178726A1 states a method for estimating the internal temperature of the device by placing a diode inside the power device. However, this method is only used for internal temperature detection in chip design and cannot be applied to high-temperature heating of semiconductors. At the same time, when the device to be tested does not have an internal diode, it is impossible to estimate the temperature.

[0006] Accordingly, it is necessary in this field to further study and improve the high-temperature testing scheme for power semiconductors in order to better meet the testing requirements of high precision and high efficiency. Summary of the invention

[0007] In view of the above defects or needs of the prior art, the purpose of the present invention is to provide a rapid high-temperature testing method and system for power semiconductors, wherein the entire testing process method is redesigned and targeted improvements are made to its key steps by closely combining the high-temperature testing characteristics and specific needs of various types of power semiconductors, which can significantly improve the accuracy and efficiency of the entire testing process, making the testing conditions closer to the actual working state, while reducing the testing cost, and providing more reliable data support for the design and application of power semiconductors.

[0008] To achieve the above object, according to one aspect of the present invention, a method for rapid high temperature testing of power semiconductors is provided, characterized in that the method comprises the following steps:

[0009] S1. Place a power semiconductor device sample in a temperature chamber at a set temperature, and after the internal and external temperatures of the device sample are balanced, measure the voltage drop and internal junction temperature data of the internal diode of the device sample for multiple times, and draw a first relationship curve between the corresponding diode voltage drop and the internal junction temperature, i.e., a voltage drop-internal junction temperature relationship curve;

[0010] S2, applying current to the power semiconductor device sample at room temperature to make it heat up, measuring the voltage drop of the internal diode of the device sample, and deriving the corresponding internal junction temperature according to the voltage drop-internal junction temperature relationship curve; then, by controlling the magnitude of the applied current, the internal junction temperature of the device sample is kept constant at the internal junction temperature, and after the internal and external temperatures of the device sample are balanced, measuring the surface shell temperature of the device sample at this time;

[0011] The applied current is changed multiple times, and the voltage drop of the internal diode of the device sample is measured accordingly, and the corresponding internal junction temperature is derived according to the voltage drop-internal junction temperature relationship curve; then, the internal junction temperature of the device sample is kept constant at the internal junction temperature by controlling the magnitude of the applied current each time, and after the internal and external temperatures of the device sample are balanced, the surface shell temperature of the device sample is measured each time;

[0012] Based on the internal junction temperature and surface shell temperature data obtained above, a second relationship curve between the internal junction temperature and the surface shell temperature of the relevant device under normal temperature conditions, namely, an internal junction temperature-surface shell temperature relationship curve, is drawn;

[0013] S3, combining the above voltage drop-internal junction temperature relationship curve and the internal junction temperature-surface shell temperature relationship curve, establishing a relationship model among the voltage drop of the diode, the internal junction temperature of the device and the surface shell temperature, i.e., a voltage drop-internal junction temperature-surface shell temperature relationship model;

[0014] S4, placing the power semiconductor device as the test object on the semiconductor test system fixture and connecting the required test instruments;

[0015] S5, applying a predetermined heating voltage and test current to achieve rapid internal temperature rise of the test object, and monitoring the actual voltage drop of its internal diode in real time, and then directly calculating the corresponding internal junction temperature and surface shell temperature data according to the above voltage drop-internal junction temperature-surface shell temperature relationship model;

[0016] Changing the heating voltage and the test current, and detecting the actual voltage drop of the internal diode in the above manner, until the calculated internal junction temperature and surface shell temperature data reach the set target value;

[0017] S6. When the calculated internal junction temperature and surface shell temperature data reach the set target value, the application of heating voltage and current is immediately stopped, and electrical parameter tests are carried out on the test object according to the test items;

[0018] S7. When the test is completed, the next test object is replaced and the process goes to S4 to restart the corresponding rapid heating and electrical parameter test process.

[0019] Further preferably, in step S1, a semiconductor thermal resistance testing method is preferably selected to directly test the voltage drop and internal junction temperature data of the internal diode of the device sample through a thermal resistance testing device, and draw a corresponding voltage drop-internal junction temperature relationship curve.

[0020] Further preferably, in the above voltage drop-internal junction temperature-surface shell temperature relationship model, the internal junction temperature curve and the surface shell temperature curve approximately decrease linearly with increasing temperature.

[0021] Further preferably, as the temperature increases, the diode voltage drop rate corresponding to the surface shell temperature curve is greater than the diode voltage drop rate corresponding to the internal junction temperature curve.

[0022] Further preferably, in steps S4 and S5, the test object is preferably connected to a semiconductor automatic test system through a switch K1, and a diode voltage drop measuring instrument is connected to a pin corresponding to the internal diode of the test object through a switch K2; then, the power supply and the drive circuit are respectively connected to the load pin and the drive pin of the test object through a switch K3, so that the drive circuit can drive the drive pin of the test object to make it in a conducting state, and the programmable power supply makes the test object heat up by applying current; the temperature calculation and control unit reads the voltage drop data measured by the diode voltage drop measuring instrument in real time, and calculates the real-time data of the internal junction temperature and external shell temperature of the test object based on the above-mentioned voltage drop-internal junction temperature-surface shell temperature relationship model, thereby controlling the output voltage and current of the programmable power supply in real time so as to control the internal shell temperature and external shell temperature of the device under test to reach and not exceed the preset target value.

[0023] Further preferably, in step S6, it is also preferably included to disconnect switches K2 and K3 immediately after the test object reaches the target value, and simultaneously connect K1 and perform a rapid test on the electrical parameters of the device through a semiconductor automatic test system.

[0024] Further preferably, when the electronic device has no internal diode, the temperature measurement can be performed by directly installing a contact or non-contact temperature sensor on the outside.

[0025] According to another aspect of the present invention, a corresponding rapid high temperature test system is also provided, which cooperates with a semiconductor automatic test system (ATE) to realize semiconductor high temperature heating and semiconductor parameter testing at a set temperature, characterized in that the system includes a switch connected to the device to be tested, a diode voltage drop test instrument, a programmable power supply, a device drive circuit, a temperature calculation and control (or computer) and a semiconductor automatic test system (ATE), wherein:

[0026] The temperature calculation and control component controls the programmable power supply, the drive circuit and the diode voltage drop measuring instrument, and the semiconductor automatic test system (ATE) communicates with the temperature calculation and control component to perform heating and testing interactively, that is, the semiconductor automatic test system (ATE) first disconnects K1 and communicates with the temperature calculation and control component, so that the component controls the switch K3 connected to the device to be tested to connect, controls the drive circuit to open the internal switch of the test object so that the programmable power supply output current passes through the device to be tested for heating, and after a certain time of heating, disconnects switch K3 and closes switch K2 to connect the diode voltage drop measuring instrument to the internal temperature of the test object. If the temperature reaches the set temperature, close switch K2 and notify the semiconductor test system to close switch K1 to start the electrical performance parameter test of the semiconductor device. If the temperature does not reach the set temperature, disconnect switch K2 and close switch K3 to continue heating the device.

[0027] Further preferably, the temperature is monitored in real time by installing an infrared device or a contact test device directly on the device to be tested; in this way, the switching times of switches K2 and K3 are reduced, further improving the efficiency.

[0028] In general, the above technical solution conceived by the present invention has the following technical advantages compared with the prior art:

[0029] 1. The present invention closely combines the high-temperature test characteristics and specific requirements of various power semiconductors. By directly applying the test voltage and current to the actual test object, rapid internal temperature rise can be achieved, greatly shortening the temperature rise time. At the same time, since the temperature box heating and stabilization time are omitted, the test efficiency is significantly improved and the overall test time is reduced;

[0030] 2. The present invention can more accurately control and predict the internal junction temperature and external shell temperature by real-time monitoring and calculating the relationship between the internal diode and temperature of the power semiconductor, thereby improving the accuracy of the test; for devices without diodes, the shell temperature of the device can be monitored in real time by installing an additional temperature sensor, and when the device temperature reaches the set temperature, the heating is stopped and the electrical parameters of the device are tested immediately. In addition, the power semiconductor in the present invention is always fixed on the test fixture, and there is no need to remove and place it, which ensures the continuity and stability of the test;

[0031] 3. Compared with the external heating method in the prior art, the present invention adopts rapid internal heating, which can effectively reduce the temperature gradient and make the test conditions closer to the actual working state;

[0032] 4. The rapid high-temperature testing method of the present invention reduces equipment requirements, can reduce testing costs, and improve economic benefits. At the same time, since the temperature control is more precise during the entire testing process, the obtained data is more reliable, thus providing solid data support for the performance evaluation of various power semiconductors. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 It is a main process flow chart of the rapid high temperature testing method according to the present invention;

[0034] Figure 2 It is a schematic diagram (diode voltage drop--junction temperature--shell temperature curve diagram) for exemplarily and specifically illustrating the voltage drop-internal junction temperature-surface shell temperature relationship model of the rapid high temperature test system of the present invention;

[0035] Figure 3 is a deployment diagram of a test system and a heating system according to the present invention when there is an internal diode;

[0036] Figure 4 FIG. 1 is a diagram showing the deployment of a test system and a heating system when there is no internal diode according to the present invention. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] It should be understood that expressions such as "include" and "may include" used in this application indicate the existence of the disclosed functions, operations or constituent elements, and do not limit one or more additional functions, operations and constituent elements. In this application, terms such as "include" and / or "have" may be interpreted as indicating specific characteristics, numbers, operations, constituent elements, components or combinations thereof, but may not be interpreted as excluding the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components or combinations thereof.

[0039] It should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0041] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0042] The present invention will be explained in detail below through a specific example.

[0043] Example 1

[0044] Step 1: Place the power semiconductor device sample in a temperature chamber with a set temperature. After the internal and external temperatures of the device sample are balanced, measure the voltage drop and internal junction temperature data of the internal diode of the device sample multiple times, and draw the first relationship curve between the corresponding diode voltage drop and the internal junction temperature, that is, the voltage drop-internal junction temperature relationship curve.

[0045] More specifically, in this step one, a semiconductor thermal resistance test method is preferably used to directly test the voltage drop and internal junction temperature data of the internal diode of the device sample through a thermal resistance test device, and draw a corresponding voltage drop-internal junction temperature relationship curve.

[0046] Step 2: applying current to the power semiconductor device sample at room temperature to make it heat up, measuring the voltage drop Δp1 of the internal diode of the device sample, and deriving the corresponding internal junction temperature tj1 according to the voltage drop-internal junction temperature relationship curve; then, by controlling the magnitude of the applied current, the internal junction temperature of the device sample is kept constant at the internal junction temperature tj1, and after the internal and external temperatures of the device sample are balanced, measuring the surface shell temperature ts1 of the device sample at this time;

[0047] The applied current is changed, and the voltage drop Δp2 of the internal diode of the device sample is measured again, and the corresponding internal junction temperature tj2 is derived according to the voltage drop-internal junction temperature relationship curve; then, the internal junction temperature of the device sample is kept constant at the internal junction temperature tj2 by controlling the magnitude of the applied current, and after the internal and external temperatures of the device sample are balanced, the surface shell temperature ts2 of the device sample is measured at this time;

[0048] …

[0049] Repeat the above process for multiple times, and draw a second relationship curve between the internal junction temperature and the surface shell temperature of the relevant device under normal temperature conditions, that is, the internal junction temperature-surface shell temperature relationship curve;

[0050] Step 3: Combine the above voltage drop-internal junction temperature relationship curve and the internal junction temperature-surface shell temperature relationship curve to establish a relationship model among the voltage drop of the diode, the internal junction temperature of the device and the surface shell temperature, i.e., the voltage drop-internal junction temperature-surface shell temperature relationship model or relationship curve.

[0051] Step 4: Place the power semiconductor device to be tested on a semiconductor test system fixture and connect the required test instruments.

[0052] More specifically, the power semiconductor device to be tested can be placed on a semiconductor test system fixture and connected to the test instruments required by the temperature prediction model, wherein the diode voltage drop test instrument uses a 6.5-digit digital multimeter, the programmable power supply selects a power supply with CC mode according to the power size of the device, the temperature calculation domain control module uses a computer, the drive circuit sets the turn-on level and turn-off level of the device to be tested through the dedicated drive circuit of the device, the computer communicates with the programmable power supply, the digital multimeter and the drive circuit through the serial port, and communicates with the semiconductor automatic test system (ATE) through Ethernet. For the device to be tested without an internal diode, a temperature test sensor is installed on the device.

[0053] Step 5: Apply a predetermined heating voltage and test current to achieve rapid internal temperature rise of the test object, and monitor the actual voltage drop of its internal diode in real time, and then directly calculate the corresponding internal junction temperature and surface shell temperature data based on the above-mentioned voltage drop-internal junction temperature-surface shell temperature relationship model; change the heating voltage and test current, and detect the actual voltage drop of the internal diode in the above-mentioned manner until the calculated internal junction temperature and surface shell temperature data reach the set target value.

[0054] More specifically, for example, switch K1 can be disconnected, switch K3 can be opened, the device to be tested can be driven to the on state, the program-controlled power supply applies a heating current to achieve rapid internal temperature rise, K3 can be disconnected after heating for a short period of time, K2 can be connected to test the voltage drop of the diode through the diode test function of the digital multimeter, and the internal junction temperature and external shell temperature of the device can be estimated. For devices without internal diodes, the temperature of the temperature sensor is read directly. If the temperature reaches the set temperature, K2 is closed and the semiconductor test system is notified to close K1 to start the electrical performance parameter test of the semiconductor device. If the temperature does not reach the set temperature, K2 is disconnected and K3 is closed to continue heating the device.

[0055] Step 6. When the calculated internal junction temperature and surface shell temperature data reach the set target value, immediately stop applying the heating voltage and current, and at the same time, carry out electrical parameter testing on the test object according to the test items.

[0056] More specifically, in this step, when the monitored junction temperature reaches the preset safe operating temperature, the power supply output is immediately adjusted to stop further temperature rise. Next, the device is switched to the semiconductor automatic test system to perform the required electrical characteristics test, such as on-state voltage drop, switching speed, etc., while recording all key data during the test, including voltage, current, temperature and time.

[0057] Step 7. When the test is completed, replace the next test object and go to step 4 to restart the corresponding rapid heating and electrical parameter test process.

[0058] Through the above conception, on the one hand, since there is a linear relationship between the voltage, current and temperature of the power semiconductor. Since it has been calibrated at normal temperature before the test, the junction temperature inside the power semiconductor calculated by the voltage and current at the load end can be accurately predicted. When the junction temperature reaches the set temperature, the application of high voltage and high current can be stopped, and the test can be carried out quickly. During the entire test process, the power semiconductor is always fixed on the test fixture, without the need to be taken out and placed, ensuring the continuity and accuracy of the test; on the other hand, compared with the traditional external heat conduction heating method, the method of the present invention achieves rapid heating by internally applying voltage and current, ensuring the accuracy of the internal junction temperature of the power semiconductor. In addition, since the power semiconductor is always in the test fixture during the test, the test speed is fast, the internal temperature changes little, and it is closer to the set junction temperature.

[0059] In addition, after the above steps, the electrical characteristic test results can be analyzed to evaluate the performance of the test object at high temperature. For example, data analysis software can be used to analyze the test results and automatically evaluate the performance of power semiconductors at high temperatures.

[0060] In summary, the rapid high temperature test method and system of the present invention provide a more efficient and rapid test scheme with test parameters closer to the actual parameters at the set temperature. By directly applying high voltage and high current, not only the test efficiency is improved, but also the accuracy of the test results is ensured because the temperature measurement is located inside the power semiconductor.

[0061] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A rapid high temperature testing method for power semiconductors, characterized in that: The method comprises the following steps: S1. Place a power semiconductor device sample in a temperature chamber at a set temperature, and after the internal and external temperatures of the device sample are balanced, measure the voltage drop and internal junction temperature data of the internal diode of the device sample for multiple times, and draw a first relationship curve between the corresponding diode voltage drop and the internal junction temperature, i.e., a voltage drop-internal junction temperature relationship curve; S2, applying current to the power semiconductor device sample at room temperature to make it heat up, measuring the voltage drop of the internal diode of the device sample, and deriving the corresponding internal junction temperature according to the voltage drop-internal junction temperature relationship curve; then, by controlling the magnitude of the applied current, the internal junction temperature of the device sample is kept constant at the internal junction temperature, and after the internal and external temperatures of the device sample are balanced, measuring the surface shell temperature of the device sample at this time; The applied current is changed multiple times, and the voltage drop of the internal diode of the device sample is measured accordingly, and the corresponding internal junction temperature is derived according to the voltage drop-internal junction temperature relationship curve; then, the internal junction temperature of the device sample is kept constant at the internal junction temperature by controlling the magnitude of the applied current each time, and after the internal and external temperatures of the device sample are balanced, the surface shell temperature of the device sample is measured each time; Based on the internal junction temperature and surface shell temperature data obtained above, a second relationship curve between the internal junction temperature and the surface shell temperature of the relevant device under normal temperature conditions, namely, an internal junction temperature-surface shell temperature relationship curve, is drawn; S3, combining the above voltage drop-internal junction temperature relationship curve and the internal junction temperature-surface shell temperature relationship curve, establishing a relationship model among the voltage drop of the diode, the internal junction temperature of the device and the surface shell temperature, i.e., a voltage drop-internal junction temperature-surface shell temperature relationship model; S4, placing the power semiconductor device as the test object on the semiconductor test system fixture and connecting the required test instruments; S5, applying a predetermined heating voltage and test current to achieve rapid internal temperature rise of the test object, and monitoring the actual voltage drop of its internal diode in real time, and then directly calculating the corresponding internal junction temperature and surface shell temperature data according to the above voltage drop-internal junction temperature-surface shell temperature relationship model; Changing the heating voltage and the test current, and detecting the actual voltage drop of the internal diode in the above manner, until the calculated internal junction temperature and surface shell temperature data reach the set target value; S6. When the calculated internal junction temperature and surface shell temperature data reach the set target value, the application of heating voltage and current is immediately stopped, and electrical parameter tests are carried out on the test object according to the test items; S7. When the test is completed, the next test object is replaced and the process goes to S4 to restart the corresponding rapid heating and electrical parameter test process.

2. The rapid high temperature testing method according to claim 1, characterized in that: In step S1, a semiconductor thermal resistance test method is preferably used to directly test the voltage drop and internal junction temperature data of the internal diode of the device sample through a thermal resistance test device, and draw a corresponding voltage drop-internal junction temperature relationship curve.

3. The rapid high temperature testing method according to claim 1 or 2, characterized in that: In the above voltage drop-internal junction temperature-surface shell temperature relationship model, the internal junction temperature curve and the surface shell temperature curve roughly decrease linearly with the increase of temperature.

4. The rapid high temperature testing method according to claim 3, characterized in that: As the temperature increases, the diode voltage drop rate corresponding to the surface shell temperature curve is greater than the diode voltage drop rate corresponding to the internal junction temperature curve.

5. The rapid high temperature testing method according to any one of claims 1 to 4, characterized in that: In steps S4 and S5, the test object is preferably connected to the semiconductor automatic test system through the switch K1, and the diode voltage drop measuring instrument is connected to the pin corresponding to the internal diode of the test object through the switch K2; Next, the power supply and the driving circuit are connected to the load pin and the driving pin of the test object respectively through the switch K3, so that the driving circuit can drive the driving pin of the test object to be in a conducting state, and the program-controlled power supply makes the test object heat up by applying current; The temperature calculation and control unit reads the voltage drop data measured by the diode voltage drop measuring instrument in real time, and calculates the real-time data of the internal junction temperature and the external shell temperature of the test object based on the above-mentioned voltage drop-internal junction temperature-surface shell temperature relationship model, thereby controlling the output voltage and current of the programmable power supply in real time so as to control the internal shell temperature and the external shell temperature of the device under test to reach and not exceed the preset target value.

6. The rapid high temperature testing method according to claim 5, characterized in that: In step S6, it is preferred to further include disconnecting switches K2 and K3 immediately after the test object reaches the target value, while connecting K1 and performing a rapid test on the electrical parameters of the device through a semiconductor automatic test system.

7. The rapid high temperature testing method according to any one of claims 1 to 6, characterized in that: When an electronic device does not have an internal diode, temperature measurement can be performed by directly mounting a contact or non-contact temperature sensor externally.

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