Substrate processing apparatus and method, method of manufacturing semiconductor device, and recording medium

Abstract

Provided is a technique capable of suppressing a change in the state of a gas. The substrate processing apparatus includes a processing chamber for processing a substrate; a buffer chamber that supplies a gas to the processing chamber and has a buffer space; a gas supply unit that supplies a gas to the processing chamber via the buffer chamber; a heating part for heating the buffer space; a pressure measuring unit capable of measuring the pressure of the buffer space; and a control unit configured so that the temperature of the cushion space can be adjusted by the heating unit when the pressure of the cushion space measured by the pressure measurement unit exceeds a preset range.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and method, a method for manufacturing a semiconductor device, and a recording medium. Background Art

[0002] As one of the steps in manufacturing a semiconductor device, a process gas is sometimes supplied to a substrate in a process container to process a film on the substrate (for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-148256 Summary of the invention

[0006] In the above-mentioned apparatus, the gas supplied from the supply pipe may expand the space in the buffer chamber, thereby causing adiabatic expansion and lowering the temperature of the gas. As a result, the gas supplied from the supply pipe may liquefy in the buffer chamber, generating particles in the processing space.

[0007] The present disclosure provides a technology capable of suppressing changes in the state of gas.

[0008] According to one embodiment of the present disclosure, a technology is provided, comprising:

[0009] a processing chamber for processing substrates;

[0010] a buffer chamber which supplies gas to the processing chamber and has a buffer space;

[0011] a gas supply unit for supplying gas to the processing chamber via the buffer chamber;

[0012] a heating unit for heating the buffer space;

[0013] a pressure measuring unit capable of measuring the pressure of the buffer space; and

[0014] The control unit is configured to adjust the temperature of the buffer space using the heating unit when the pressure of the buffer space measured by the pressure measuring unit is outside a preset range.

[0015] Effects of the Invention

[0016] According to the present disclosure, changes in the state of gas can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is an explanatory diagram showing a schematic configuration example of a substrate processing apparatus according to an embodiment of the present disclosure.

[0018] Figure 2 This is a block diagram for explaining the configuration of a control unit of a substrate processing apparatus according to an embodiment of the present disclosure.

[0019] The reference numerals are described as follows:

[0020] S substrate

[0021] Processing Room 201

[0022] 232 Buffer Space

[0023] 240 Gas supply system

[0024] 301, 302 Pressure measurement unit

[0025] 313 Heater

[0026] 400 Controller DETAILED DESCRIPTION

[0027] (1) Configuration of substrate processing apparatus

[0028] The following mainly refers to Figure 1 as well as Figure 2 An embodiment of the present disclosure is described. In addition, the drawings used in the following description are all schematic, and the relationship between the dimensions of the elements and the ratio of the elements shown in the drawings are not necessarily consistent with reality. In addition, the relationship between the dimensions of the elements and the ratio of the elements are not necessarily consistent between multiple drawings.

[0029] Figure 1 1 is a cross-sectional view of a substrate processing apparatus 10 for implementing a method for manufacturing a semiconductor device. The substrate processing apparatus 100 includes a container 202. In addition, the container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). A processing space 205 for processing a substrate S such as a silicon wafer, and a conveying space 206 for the substrate S to pass through when the substrate S is conveyed to the processing space 205 are formed in the container 202. The container 202 is composed of an upper container 202a and a lower container 202b. A partition 208 is provided between the upper container 202a and the lower container 202b. The structure constituting the processing space 205 is referred to as a processing chamber 201. In the present embodiment, it is mainly composed of a dispersion plate 234 and a substrate mounting table 212 to be described later.

[0030] A substrate carrying-in outlet 148 adjacent to the gate valve 149 is provided on the side of the lower container 202b, and the substrate S moves between the lower container 202b and a transfer chamber (not shown) through the substrate carrying-in outlet 148. A plurality of lifting pins 207 are provided at the bottom of the lower container 202b. The lower container 202b is grounded.

[0031] A substrate support 210 for supporting the substrate S is disposed in the processing space 205. The substrate support 210 mainly includes a substrate mounting surface 211 for mounting the substrate S, a substrate mounting table 212 having the substrate mounting surface 211 on the surface, and a heater 213 as a first heating unit provided in the substrate mounting table 212. The heater 213 is also referred to as a substrate mounting table heater. Through holes 214 for the lifting pins 207 to pass through are provided on the substrate mounting table 212 at positions corresponding to the lifting pins 207.

[0032] The substrate mounting table 212 includes a temperature measuring device 216 for measuring the temperature of the heater 213 . The temperature measuring device 216 is connected to the temperature measuring unit 221 via a wiring 222 .

[0033] A wiring 220 for supplying power is connected to the heater 213 . The heater 213 is connected to a heater control unit 223 via the wiring 220 .

[0034] The substrate mounting table 212 is supported by a shaft 217. The shaft 217 penetrates the bottom of the container 202 and is connected to a lifting mechanism 218 outside the container 202.

[0035] By operating the lifting mechanism 218 to lift the shaft 217 and the substrate stage 212, the substrate stage 212 can lift the substrate S placed on the substrate placement surface 211. The lower end of the shaft 217 is covered by a bellows 219, thereby keeping the processing space 205 airtight.

[0036] When the substrate S is transported by the substrate stage 212, the substrate mounting surface 211 is lowered to a position opposite to the substrate carrying-in outlet 148. Figure 1 As shown, the substrate S rises to a processing position in the processing space 205 .

[0037] An injection head 230 as a gas dispersing mechanism is provided at the upper part (upstream side) of the processing space 205. A through hole 231a is provided in a cover 231 of the injection head 230. The through hole 231a is connected to a common gas supply pipe 242 described later. A buffer chamber 232a having a buffer space 232 inside is provided in the injection head 230. The gas is supplied to the processing space 205 via the buffer space 232. The details of the injection head 230 will be described later.

[0038] A rectifying plate 270 is provided in the buffer space 232. The rectifying plate 270 is in a conical shape with the gas inlet 241 as the center and a diameter thereof increasing in the radial direction toward the substrate S. The lower end of the edge of the rectifying plate 270 is configured to be located at the outer periphery compared to the end of the substrate S. The rectifying plate 270 is configured to efficiently move the supplied gas in the direction of the dispersion plate 234 described later.

[0039] The upper container 202a has a flange, and a support block 233 is placed and fixed on the flange. The support block 233 has a flange 233a, and a dispersion plate 234 formed with a plurality of gas supply holes is placed and fixed on the flange 233a. Furthermore, a cover 231 is fixed to the upper surface of the support block 233.

[0040] Next, the gas supply system 240 as the gas supply unit will be described. A first gas supply pipe 243a, a second gas supply pipe 244a, a third gas supply pipe 245a, and a fourth gas supply pipe 248a are connected to the common gas supply pipe 242.

[0041] The first gas supply pipe 243a is provided with a first gas source 243b, a mass flow controller (MFC) 243c as a flow controller (flow control unit), and a valve 243d as an opening and closing valve in order from the upstream direction.

[0042] The first gas source 243b is a source of a first gas containing a first element (also referred to as "first element containing gas"). The first element containing gas is a raw material gas, that is, one of the process gases.

[0043] The first gas supply pipe 243a, the MFC 243c, and the valve 243d mainly constitute the first gas supply system 243. The first gas supply system 243 may include a first gas source 243b.

[0044] The second gas supply pipe 244a is provided with a second gas source 244b, an MFC 244c, and a valve 244d in order from the upstream direction.

[0045] The second gas source 244b is a source of a second gas containing a second element (hereinafter also referred to as "second element containing gas"). The second element containing gas is one of the processing gases. In addition, the second element containing gas can also be considered as a reaction gas or a modified gas.

[0046] When the substrate S is processed using the second gas in a plasma state, a remote plasma unit 244 e may be provided in the second gas supply pipe 244 a .

[0047] The second gas supply pipe 244a, the MFC 244c, and the valve 244d mainly constitute the second gas supply system 244 (also referred to as a reaction gas supply system). The second gas supply system 244 may include a remote plasma unit 244e. In addition, the second gas supply system 244 may include a second gas source 244b.

[0048] The third gas supply pipe 245a is provided with a third gas source 245b, an MFC 245c, and a valve 245d in this order from the upstream direction.

[0049] The third gas source 245b is an inert gas source.

[0050] The third gas supply pipe 245a, the MFC 245c, and the valve 245d mainly constitute the third gas supply system 245. The third gas supply system 245 may include a third gas source 245b.

[0051] The inert gas supplied from the inert gas source 245 b functions as a purge gas for purging the gas remaining in the container 202 or the shower head 230 in the substrate processing step.

[0052] The fourth gas supply pipe 248a is provided with a fourth gas source 248b, an MFC 248c, and a valve 248d in this order from the upstream direction.

[0053] The fourth gas source 248b is a cleaning gas source.

[0054] The fourth gas supply pipe 248a, the MFC 248c, and the valve 248d mainly constitute the fourth gas supply system 248. The fourth gas supply system 248 may include a fourth gas source 248b.

[0055] The cleaning gas supplied from the fourth gas source 248b is in a plasma state when cleaning the inside of the processing chamber 201 or the shower head 230. The cleaning gas in a plasma state removes the byproducts remaining in the container 202 or the shower head 230.

[0056] An exhaust pipe 262 is connected to the processing space 205 via an exhaust buffer structure 261. The exhaust buffer structure 261 is provided in a circumferential shape so as to surround the outer circumference of the substrate S. In the present embodiment, the exhaust buffer structure 261 is disposed between the partition plate 208 and the upper container 202a.

[0057] The exhaust pipe 262 is connected to the upper container 202a on the upper side of the exhaust buffer structure 261 so as to communicate with the processing space 205 via the exhaust buffer structure 261. The exhaust pipe 262 is provided with an APC (Auto Pressure Controller) 266, which is a pressure controller that controls the pressure in the processing space 205 to a predetermined pressure. The APC 266 has a valve body (not shown) capable of adjusting the opening, and adjusts the conductance of the exhaust pipe 262 according to an instruction from a controller 400 described later.

[0058] A valve 267 is provided on the upstream side of the APC 266 in the exhaust pipe 262. A vacuum pump 269 is provided downstream of the exhaust pipe 262. The vacuum pump 269 exhausts the atmosphere of the processing space 205 through the exhaust pipe 262. The exhaust pipe 262, the valve 267, and the APC 266 are collectively referred to as a first exhaust system. The vacuum pump 269 may also be included in the first exhaust system.

[0059] Next, the detailed structure of the ejection head 230 will be described.

[0060] A heater 313 as a second heating unit is provided in the cover 231. The heater 313 is also called a head heater.

[0061] A wiring 320 for supplying power is connected to the heater 313. A heater control unit 323 is connected to the heater 313 via the wiring 320. The heater 313 is configured to heat the buffer space 232 in the ejection head 230 in accordance with an instruction from the heater control unit 323.

[0062] The common gas supply pipe 242 is provided with a pressure measuring unit 301 as a first pressure measuring unit capable of measuring the pressure in the common gas supply pipe 242. In addition, a pressure measuring unit 302 as a second pressure measuring unit capable of measuring the pressure in the buffer space 232 is provided in the buffer space 232. In addition, a temperature measuring device 316 capable of measuring the temperature of the buffer space 232 is provided in the buffer space 232. The temperature measuring device 316 is connected to the temperature measuring unit 317 via a wiring 322.

[0063] The buffer space 232 is connected to an exhaust pipe 303. The exhaust pipe 303 is connected to the cover 231 at the upper side of the buffer space 232. The exhaust pipe 303 is provided with a valve 304, an APC 305 as a pressure controller (i.e., a pressure regulator) for controlling the buffer space 232 to a predetermined pressure, and a vacuum pump 306 in order from the upstream direction. The vacuum pump 306 exhausts the atmosphere of the buffer space 232 via the exhaust pipe 303. The exhaust pipe 303, the valve 304, and the APC 305 are collectively referred to as a second exhaust system. The vacuum pump 306 may also be included in the second exhaust system.

[0064] The APC 305 has a valve body whose opening degree can be adjusted, and adjusts the conductance of the exhaust pipe 303 according to an instruction from a controller 400 described later.

[0065] (Controller)

[0066] The substrate processing apparatus 100 includes a controller 400 as a control unit (control means) for controlling the operation of each unit of the substrate processing apparatus 100 .

[0067] Figure 2The controller 400 is schematically shown. The controller 400 is configured as a computer having a CPU (Central Processing Unit) 401, a RAM (Random Access Memory) 402, a storage device 403 as a storage unit, and an I / O port 404. The RAM 402, the storage device 403, and the I / O port 404 are configured to be able to exchange data with the CPU 401 via an internal bus 405.

[0068] The controller 400 is configured to be connectable to an input / output device 281 such as a keyboard or the like, or an external storage device 282 .

[0069] The display device 284 displays data detected by each monitoring unit. In addition, in this embodiment, it is described as a component different from the input-output device 281, but it is not limited to this. For example, as long as the input-output device also has a display screen such as a touch panel, the input-output device 281 and the display device 284 can be combined into one component.

[0070] The storage device 403 is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. A process recipe that records the steps or conditions of the substrate processing described later, or a process program, a table, etc. that serves as a control program to control the action of the substrate processing device in order to implement the process recipe are stored in the storage device 403 in a readable manner. In addition, a setting range of a pressure value or a temperature value related to the buffer space 232 described later is recorded. In addition, the process program is combined in a manner that enables the controller 400 to execute each step in the substrate processing process described later and obtain a specified result, and functions as a program. Hereinafter, the process program or the control program, etc. are also collectively referred to as a program. In addition, when the term "program" is used in this specification, there are cases where only a process recipe is included, only a control program is included, or both are included. In addition, the RAM 402 is configured as a memory area (work area) for temporarily storing programs or data read by the CPU 401.

[0071] The I / O port 404 is connected to various components of the substrate processing apparatus 100, including the gate valve 149, the lifting mechanism 218, the APC 266, 305, the vacuum pump 269, 306, the MFC 243c, 244c, 245c, 248c, the valves 243d, 244d, 245d, 248d, 267, 304, the heater control unit 223, 323, the pressure measuring unit 301, 302, and the temperature measuring unit 221, 317.

[0072] The CPU 401 is configured to read and execute the control program from the storage device 403, and read the process program from the storage device 403 according to the input of the operation command from the input / output device 281. In addition, the CPU 401 is configured to control the opening and closing operation of the gate valve 149, the lifting and lowering operation of the lifting mechanism 218, the opening and closing operation of the APC 266 and 305, the on / off control of the vacuum pumps 269 and 306, the flow rate adjustment operation of the MFC 243c, 244c, 245c and 248c, the opening and closing operation of the valves 243d, 244d, 245d, 248d, 267 and 304, the temperature control of the heater 213 by the heater control unit 223, the temperature control of the heater 313 by the heater control unit 323, the pressure detection operation by the pressure measuring units 301 and 302, the temperature detection operation by the temperature measuring units 221 and 317, etc. according to the contents of the read process program.

[0073] Specifically, the controller 400 transmits control information to the heater control unit 223 based on the temperature information measured by the temperature measuring unit 221. The heater control unit 223 controls the heater 213 with reference to the received control information.

[0074] Furthermore, the controller 400 transmits control information to the heater control unit 323 based on the temperature information of the buffer space 232 measured by the temperature measuring unit 317. The heater control unit 323 controls the heater 313 with reference to the received control information.

[0075] In addition, the controller 400 transmits control information to the heater control unit 323 based on the pressure information measured by the pressure measuring units 301 and 302. The heater control unit 323 controls the heater 313 with reference to the received control information.

[0076] Furthermore, the controller 400 adjusts the opening degree of the APC 305 based on the temperature information of the buffer space 232 measured by the temperature measuring unit 317 to control the pressure of the buffer space 232 .

[0077] In addition, the controller 400 can constitute the controller 400 of the present embodiment by installing the program to the computer using an external storage device (e.g., a disk such as a hard disk, an optical disk such as a DVD, an optical magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) 282 that stores the above-mentioned program. In addition, the means for supplying the program to the computer is not limited to the case of supplying via the external storage device 282. For example, the program can also be supplied without passing through the external storage device 282 using communication means such as the Internet or a dedicated line. In addition, the storage device 403 or the external storage device 282 is configured as a recording medium that can be read by the computer. Hereinafter, these are also collectively referred to as recording media. In addition, when the term recording medium is used in this specification, there is a case where only the storage device 403 is included, a case where only the external storage device 282 is included, or a case where both are included.

[0078] (2) Substrate processing steps

[0079] Next, as one process of semiconductor manufacturing process, a process of forming a thin film on a substrate S using the substrate processing apparatus 100 having the above-described structure will be described. In the following description, the operations of the various components constituting the substrate processing apparatus are controlled by the controller 400 .

[0080] In addition, in this specification, the term "substrate" may be used to refer to "the substrate itself" or "a laminate (assembly) of a substrate and a predetermined layer or film formed on the surface of the substrate" (that is, a substrate includes a predetermined layer or film formed on the surface). In addition, in this specification, the term "surface of the substrate" may be used to refer to "the surface (exposed surface) of the substrate itself" or "the surface of a predetermined layer or film formed on the substrate, that is, the outermost surface of the substrate as a laminate".

[0081] Therefore, in this specification, the case where it is described as "supplying a predetermined gas to the substrate" means "supplying a predetermined gas directly to the surface (exposed surface) of the substrate itself" or "supplying a predetermined gas to a layer or film formed on the substrate, that is, to the outermost surface of the substrate as a laminate." In addition, in this specification, the case where it is described as "forming a predetermined layer (or film) on the substrate" means "forming a predetermined layer (or film) directly on the surface (exposed surface) of the substrate itself" or "forming a predetermined layer (or film) on a layer or film formed on the substrate, that is, on the outermost surface of the substrate as a laminate."

[0082] In this specification, the case where the term "wafer" is used is the same as the case where the term "substrate" is used. In this case, in the above description, "substrate" can be replaced with "wafer".

[0083] (Substrate carrying / loading process: S10)

[0084] By lowering the substrate stage 212 to the conveying position of the substrate S, the lift pins 207 are passed through the through holes 214 of the substrate stage 212. As a result, the lift pins 207 are in a state of protruding by a predetermined height from the surface of the substrate stage 212. Next, the gate valve 149 is opened, and the substrate S is loaded into the processing chamber using the substrate transfer machine, and the substrate S is transferred onto the lift pins 207. Thus, the substrate S is supported in a horizontal posture on the lift pins 207 protruding from the surface of the substrate stage 212.

[0085] After the substrate S is loaded into the container 202, the substrate transfer machine is retracted to the outside of the container 202, and the gate valve 149 is closed to seal the container 202. Thereafter, the substrate S is placed on the substrate placement surface 211 provided on the substrate placement table 212 by raising the substrate placement table 212.

[0086] Furthermore, when the substrate S is carried into the container 202, it is preferred that the container 202 is exhausted by the first exhaust system, and an inert gas is supplied into the container 202 from the third gas supply system 245. That is, it is preferred that the vacuum pump 269 is operated and the APC 266 is opened to exhaust the container 202, and at least the valve 245d of the third gas supply system 245 is opened to supply the inert gas into the container 202. Thus, it is possible to suppress the intrusion of particles into the container 202 or the attachment of particles to the substrate S. In addition, the vacuum pump 269 is always in an operating state during at least the period from the substrate carrying-in / loading step (S10) to the end of the substrate carrying-out step (S16) described later.

[0087] When the substrate S is placed on the substrate mounting table 212, power is supplied to the heater 213 embedded in the substrate mounting table 212 to adjust the surface temperature of the substrate S to a predetermined temperature. At this time, the temperature of the heater 213 is adjusted by controlling the degree of power supplied to the heater 213 using the heater control unit 223 based on the temperature information detected by the temperature measuring unit 221.

[0088] In addition, the configuration is such that power is supplied to the heater 313 embedded in the cover 231 during at least the period from the first gas supply step (S11) to the end of the determination step (S15) described later, and the buffer space 232 has a temperature within a preset setting range. At this time, the temperature of the heater 313 is mainly adjusted by controlling the degree of power supplied to the heater 313 using the heater control unit 323 based on the pressure information detected by the pressure measuring unit 302, and the temperature of the buffer space 232 is adjusted to be within the preset setting range.

[0089] That is, the controller 400 sends control information to the heater control unit 323 based on the pressure information of the buffer space 232 measured by the pressure measuring unit 302. The heater control unit 323 controls the heater 313 with reference to the received control information. Specifically, when, for example, the pressure value of the buffer space 232 measured by the pressure measuring unit 302 exceeds a preset setting range, the heater control unit 323 controls the heater 313 to adjust the temperature of the buffer space 232. More specifically, when, for example, the pressure value of the buffer space 232 measured by the pressure measuring unit 302 is lower than a preset setting range, the heater control unit 323 controls the heater 313 to increase the temperature of the buffer space 232. In other words, the controller 400 controls the heater 313 by the heater control unit 323 to adjust the temperature of the buffer space 232 measured by the temperature measuring unit 317 in such a manner that the pressure of the buffer space 232 is within the setting range. At this time, that is, the temperature of the buffer space 232 during the substrate processing is adjusted in such a way that it is higher than the temperature at which the gas is liquefied and lower than the processing temperature of the substrate S. In this way, the liquefaction of the gas can be suppressed, and the degree of thermal decomposition of the gas supplied to the buffer space 232 can be suppressed compared to the substrate processing, and the generation of particles can be prevented. The processing temperature in this specification refers to the temperature of the substrate S or the temperature in the processing chamber 201, and the processing pressure refers to the pressure in the processing chamber 201. In addition, the processing time refers to the time during which the processing is continued. This is also the case in the following description.

[0090] That is, the temperature of the buffer space 232 is controlled in such a manner that the pressure of the buffer space 232 is within a range of pressures that do not cause liquefaction of the gas. By preventing the temperature of the gas from decreasing in the buffer space 232, it is possible to suppress the gas supplied from the supply pipe from being liquefied again in the buffer space. As a result, the supply amount of the gas supplied to the processing chamber 201 is stabilized, and the process reproducibility is improved. In addition, by suppressing liquefaction in the injection head 230 in this way, it is possible to suppress the generation of particles in the injection head 230.

[0091] In addition, when the temperature value of the buffer space 232 measured by the temperature measuring unit 317 exceeds the preset setting range, the controller 400 can control the heater 313 via the heater control unit 323 to adjust the temperature of the buffer space 232. More specifically, when the temperature value of the buffer space 232 measured by the temperature measuring unit 317 is lower than the preset setting range, the controller 400 controls the heater 313 to increase the temperature of the buffer space 232. At this time, the temperature of the buffer space 232 can also be adjusted to a temperature higher than the gas liquefaction temperature and lower than the processing temperature of the substrate S.

[0092] (First Gas Supplying Step: S11)

[0093] After the substrate mounting table 212 moves to the substrate processing position, the atmosphere is exhausted from the processing chamber 201 through the exhaust pipe 262 to adjust the pressure in the processing chamber 201 .

[0094] After adjusting to a prescribed pressure and making the temperature of the buffer space 232 and the temperature of the substrate S reach prescribed temperatures, respectively, the valve 243d is opened, and the first gas is supplied to the processing space 205 via the common gas supply pipe 242 and the injection head 230. At this time, the MFC243c is adjusted so that the flow rate of the first gas becomes a prescribed flow rate. At this time, the ambient gas is exhausted via the exhaust pipe 262. In this process, the valve 245d is set to an open state, and an inactive gas is supplied from the third gas supply pipe 245a. In this way, the first gas is prevented from invading the third gas supply system 245. The supplied first gas forms a first layer on the substrate S. After a prescribed time has passed since the supply of the first gas began, the valve 243d is closed to stop the supply of the first gas.

[0095] (Purge process: S12)

[0096] Next, an inert gas is supplied from the third gas supply pipe 245a to purge the processing space 205. Thus, the first gas that cannot be combined with the substrate S in the first gas supply step S11 is removed from the processing space 205 through the exhaust pipe 262.

[0097] (Second Gas Supplying Step: S13)

[0098] Next, the valve 244d is opened, and the second gas is supplied to the processing space 205 via the remote plasma unit 244e, the common gas supply pipe 242, and the injection head 230. At this time, the MFC 244c is adjusted so that the flow rate of the second gas becomes a predetermined flow rate. In addition, in this process, the valve 245d is also set to an open state, and an inert gas is supplied from the third gas supply pipe 245a. In this way, the second gas is prevented from invading the third gas supply system 245.

[0099] The second gas that is in a plasma state by the remote plasma unit 244e is supplied into the processing space 205 via the common gas supply pipe 242 and the injection head 230. The supplied second gas reacts with the first layer on the substrate S. Then, the already formed first layer is modified by the plasma of the second gas. Thus, a second layer is formed on the substrate S.

[0100] After a predetermined time has passed since the start of supply of the second gas, the valve 244d is closed to stop the supply of the second gas.

[0101] (Purge process: S14)

[0102] Next, purging is performed in the same manner as in the above-mentioned purging step S12.

[0103] (Determination process: step S15)

[0104] By taking steps S11 to S14 as one cycle (one loop), and performing the cycle a predetermined number of times (n times, where n is an integer of 1 or 2 or more), a thin film having a desired film thickness is formed on the substrate S.

[0105] (Substrate unloading process: step S16)

[0106] The substrate stage 212 is lowered so that the substrate S is supported by the lift pins 207 protruding from the surface of the substrate stage 212. Thereafter, the gate valve 149 is opened, and the substrate S is carried out of the container 202 using the substrate transfer machine. Thereafter, when the substrate processing step is completed, the supply of the inert gas from the third gas supply system 245 into the container 202 is stopped.

[0107] [Second embodiment]

[0108] Next, the second embodiment is described. In the second embodiment, the temperature information of the buffer space 232 is mainly used to suppress the liquefaction of the gas in the buffer space 232. That is, in the second embodiment, at least during the period from the first gas supply step (S11) to the end of the determination step (S15), the pressure of the buffer space 232 is adjusted so that the temperature of the buffer space 232 is within a range that does not cause the liquefaction of the gas. The following description will focus on the differences, and the description of the same configuration as the first embodiment will be omitted.

[0109] In the second embodiment, at least during the period from the above-mentioned first gas supply process (S11) to the end of the judgment process (S15), the controller 400 is configured to use APC305 to adjust the pressure of the buffer space 232 when the temperature of the buffer space 232 measured by the temperature measuring unit 317 exceeds a pre-set setting range.

[0110] Specifically, the controller 400 detects the temperature of the buffer space 232 using the temperature measuring unit 317. Then, the controller 400 is configured to adjust the pressure in the buffer space 232 using the APC 305 when the temperature of the buffer space 232 exceeds the preset setting range. More specifically, the controller 400 increases the pressure of the buffer space 232 using the APC 305 when, for example, the temperature of the buffer space 232 measured by the temperature measuring unit 317 is lower than the preset setting range. In other words, the APC 305 adjusts the pressure of the buffer space 232 measured by the pressure measuring unit 302 so that the temperature of the buffer space 232 is within the setting range. Thus, the liquefaction of the gas supplied to the buffer space 232 can be suppressed. At this time, that is, the temperature of the buffer space 232 is adjusted to be higher than the temperature at which the gas is liquefied and lower than the processing temperature of the substrate S at least when the substrate processing is performed. In this embodiment, the same effect as the above-mentioned embodiment is also obtained.

[0111] [Third Embodiment]

[0112] Next, the third embodiment is described. In the third embodiment, the pressure information inside and outside the buffer space 232 is mainly used to suppress the liquefaction of the gas in the buffer space 232. That is, in the third embodiment, at least during the period from the first gas supply step (S11) to the end of the determination step (S15), the temperature of the buffer space 232 is adjusted so that the differential pressure inside and outside the buffer space 232 is within a range that does not cause liquefaction of the gas.

[0113] In the third embodiment, at least during the period from the first gas supply step (S11) to the end of the determination step (S15), the controller 400 detects the differential pressure between the inside and outside of the buffer space 232 using the pressure measuring unit 301 and the pressure measuring unit 302. That is, the controller 400 calculates the difference between the pressure value in the common gas supply pipe 242 measured by the pressure measuring unit 301 and the pressure value in the buffer space 232 measured by the pressure measuring unit 302, that is, the differential pressure between the inside and outside of the buffer space 232. Then, the controller 400 is configured to control the heater 313 using the heater control unit 323 when the differential pressure between the inside and outside of the buffer space 232 exceeds a preset setting range, thereby adjusting the temperature in the buffer space 232.

[0114] Specifically, the controller 400 controls the heater 313 by the heater control unit 323, for example, when the difference between the pressure value in the common gas supply pipe 242 measured by the pressure measuring unit 301 and the pressure value in the buffer space 232 measured by the pressure measuring unit 302 is greater than a preset setting range, thereby increasing the temperature of the buffer space 232. At this time, that is, at least when the substrate processing is performed, the temperature of the buffer space 232 is adjusted to be higher than the gas liquefaction temperature and lower than the processing temperature of the substrate S. In this embodiment, the same effect as the above-mentioned embodiment is obtained.

[0115] [Other embodiments]

[0116] As mentioned above, although each embodiment is specifically described, it is not limited to the said each embodiment, Various changes can be made without departing from the range which concerns.

[0117] For example, in the above-described embodiments, the heater 313 for heating the buffer space 232 is provided on the cover 231 , but the present invention is not limited thereto, and the heater 313 may be provided on the rectifying plate 270 .

[0118] In addition, for example, in each of the above-mentioned embodiments, as a process performed by a substrate processing device, a film forming process is taken as an example, but the present embodiment is not limited thereto. That is, in addition to the film forming process cited as an example in each embodiment, it can also be applied to film forming processes other than the thin films exemplified in each embodiment. In addition, the specific content of the substrate processing is not limited, and not only the film forming process can be performed, but also other substrate processing such as annealing, diffusion, oxidation, nitridation, photolithography, etc. can be performed. Moreover, it can also be applied to other substrate processing devices, such as annealing devices, etching devices, oxidation devices, nitridation devices, exposure devices, coating devices, drying devices, heating devices, and other substrate processing devices using plasma. In addition, these devices may also be mixed. In addition, a part of the structure of a certain embodiment can be replaced with the structure of another embodiment, and in addition, the structure of another embodiment can be added to the structure of a certain embodiment. In addition, for a part of the structure of each embodiment, other structures can also be added, deleted, and replaced.

[0119] In addition, the process used for each treatment is preferably prepared according to the treatment content, and is stored in the storage device 403 in advance via the electrical communication line or the external storage device 282. Then, when starting each treatment, the CPU 401 preferably selects a suitable process from the multiple processes stored in the storage device 403 according to the treatment content. Thus, a substrate processing device can be used to form a film of various film types, component ratios, film qualities, and film thicknesses with good reproducibility. In addition, the burden on the operator can be reduced, operational errors can be avoided, and each treatment can be started quickly.

[0120] In addition, the above process is not limited to the case of newly creating, and can also be prepared by, for example, changing an existing process already installed in a substrate processing device. In the case of changing a process, the changed process can also be installed in the substrate processing device via an electrical communication line or a recording medium recording the process. In addition, the input / output device 281 of the existing substrate processing device can also be operated to directly change the existing process already installed in the substrate processing device.

[0121] In addition, the above-mentioned embodiments can be used in combination as appropriate. The processing steps and processing conditions at this time can be made the same as the processing steps and processing conditions of the above-mentioned embodiments, for example.

Claims

1. A substrate processing method, characterized in that: The process includes the following steps: an adjusting step, in which, when the temperature or pressure of the buffer space in the buffer chamber exceeds a preset range, the pressure or temperature of the buffer space is adjusted; and In the processing step, the gas is supplied to the processing chamber for processing the substrate through the buffer chamber to process the substrate.

2. The substrate processing method according to claim 1, characterized in that: In the adjustment process, When the temperature of the buffer space exceeds a preset range, the pressure of the buffer space is adjusted.

3. The substrate processing method according to claim 2, characterized in that: In the adjustment process, When the pressure value of the buffer space exceeds a preset range, the temperature of the buffer space is adjusted.

4. The substrate processing method according to claim 1, characterized in that: In the adjustment process, When the pressure of the buffer space exceeds a preset range, the temperature of the buffer space is adjusted.

5. The substrate processing method according to claim 1, characterized in that: In the adjustment process, When the temperature of the buffer space is lower than a preset range, the pressure of the buffer space is increased.

6. The substrate processing method according to claim 1, characterized in that: In the adjustment process, When the pressure of the buffer space is lower than a preset range, the temperature of the buffer space is increased.

7. The substrate processing method according to claim 1, characterized in that: The step of treating is performed after the step of adjusting.

8. The substrate processing method according to claim 1, characterized in that: The processing step includes a first gas supply step of supplying a first gas to the processing chamber, and a second gas supply step of supplying a second gas to the processing chamber. The step of adjusting is included in the step of treating, and is performed in parallel with the first gas supply step and the second gas supply step.

9. The substrate processing apparatus according to claim 1, wherein: At least in the processing step, the temperature of the buffer space is lower than the processing temperature of the substrate.

10. The substrate processing method according to claim 1, characterized in that: In the adjusting step, the temperature of the buffer space is adjusted so as to be within a pressure range that does not cause liquefaction of the gas.

11. The substrate processing method according to claim 1, characterized in that: In the treatment step, the temperature of the buffer space is set to a temperature that can suppress liquefaction of the gas and thermal decomposition on the substrate.

12. The substrate processing method according to claim 1, characterized in that: In the adjustment process, The pressure difference between the inside and outside of the buffer chamber is detected, and when the pressure difference exceeds a preset range, the temperature of the buffer space is adjusted.

13. The substrate processing method according to claim 1, characterized in that: A gas supply unit is provided which is communicated with the buffer chamber and supplies gas to the buffer chamber. In the adjusting step, when the difference between the pressure in the gas supply unit and the pressure in the buffer space is outside a preset range, the temperature of the buffer space is adjusted.

14. The substrate processing method according to claim 13, characterized in that: The gas supply unit includes a gas supply pipe communicating with the buffer space. The pressure in the gas supply unit is the pressure in the gas supply pipe.

15. A method for manufacturing a semiconductor device, characterized in that: The invention comprises the substrate processing method according to claim 1.

16. A computer-readable recording medium having a program recorded thereon, wherein the recording medium is characterized in that the program causes a substrate processing apparatus to execute the following steps through a computer: When the temperature or pressure of the buffer space in the buffer chamber exceeds a preset range, adjusting the pressure or temperature of the buffer space; and The gas is supplied through the buffer chamber to a processing chamber for processing a substrate to process the substrate.

17. A substrate processing device, characterized in that: have: A buffer chamber having a buffer space; a gas supply unit for supplying gas to the processing chamber via the buffer chamber; a heating unit for heating the buffer space; and The control unit is configured to adjust the pressure or temperature of the buffer space when the temperature or pressure of the buffer space in the buffer chamber exceeds a preset range, and to supply gas to a processing chamber for processing a substrate through the buffer chamber to process the substrate.

Images