Wafer tray and thin film deposition equipment and method

Abstract

The invention provides a wafer tray, a thin film deposition device and a thin film deposition method. The wafer tray comprises a tray body and an edge ring. A plurality of first positioning parts are arranged on the edge of the upper surface of the tray body. And a plurality of first steps with different heights are arranged in each first positioning part. And a plurality of second positioning parts are arranged on the edge of the lower surface of the edge ring. A plurality of second steps with different heights are arranged in each second positioning part and are used for being matched with the first steps in the first positioning parts to mount the edge ring at different heights of the upper surface of the tray body and surround a wafer placed on the tray body; and adjusting the plasma density of the edge of the wafer in a subsequent thin film deposition process. According to the invention, the distance between the edge ring and the wafer surrounded by the edge ring can be automatically adjusted by installing the edge ring at different heights of the upper surface of the tray body, so that the plasma density of the edge of the wafer can be adjusted in the subsequent thin film deposition process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a wafer tray, a thin film deposition device, and a thin film deposition method. Background Art

[0002] In the field of semiconductor device processing, the uniformity of the film and the distribution of film thickness directly affect the performance and production efficiency of semiconductor devices. During the thin film deposition process, the thickness of the film is usually thinner in the center and thicker in the edge. This uneven film thickness phenomenon is particularly obvious at the edge of the wafer, which usually leads to a large fluctuation range of the edge film thickness, and even high and low points with significant differences in film thickness. The prior art is used to change the film thickness at the edge of the wafer by installing an edge ring on the wafer tray. However, the distance between the existing edge ring and the wafer tray is fixed. If you want to change the distance, you need to cool down the cavity and replace the edge accessories to achieve this, which significantly reduces the efficiency of the thin film deposition process.

[0003] In order to overcome the above-mentioned defects in the prior art, there is an urgent need in the art for an improved wafer tray for automatically adjusting the distance between the edge ring and the wafer it surrounds, so as to adjust the plasma density at the edge of the wafer in a subsequent thin film deposition process. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides a wafer tray, a thin film deposition device and a thin film deposition method. By providing a positioning portion with multiple steps of different heights, an edge ring can be installed at different heights on the upper surface of the tray body to automatically adjust the distance between the edge ring and the wafer it surrounds, so as to adjust the plasma density at the edge of the wafer in the subsequent thin film deposition process.

[0006] Specifically, the wafer tray provided according to the first aspect of the present invention includes a tray body and an edge ring. A plurality of first positioning portions are provided at the edge of the upper surface of the tray body. A plurality of first steps of different heights are provided in each of the first positioning portions. A plurality of second positioning portions are provided at the edge of the lower surface of the edge ring. A plurality of second steps of different heights are provided in each of the second positioning portions, which are used to cooperate with the first steps in the first positioning portions, install the edge ring at different heights on the upper surface of the tray body, and surround the wafer placed on the tray body, so as to adjust the plasma density at the edge of the wafer in the subsequent thin film deposition process.

[0007] Further, in some embodiments of the present invention, each of the first steps of each of the first positioning parts is provided with a positioning hole or a positioning pin, and at least one of the second steps of each of the second positioning parts is provided with a positioning pin or a positioning hole, so as to install the edge ring at different heights of the upper surface of the tray body. Or at least one of the first steps of each of the first positioning parts is provided with a positioning pin or a positioning hole, and each of the second steps of each of the second positioning parts is provided with a positioning hole or a positioning pin, so as to install the edge ring at different heights of the upper surface of the tray body.

[0008] Furthermore, in some embodiments of the present invention, four first positioning portions are disposed on the edge of the upper surface of the tray body, and four second positioning portions are disposed on the edge of the lower surface of the edge ring.

[0009] Further, in some embodiments of the present invention, six first steps are provided in each of the first positioning portions. Six second steps are provided in each of the second positioning portions. The edge ring is rotated to a corresponding angle according to the film thickness distribution of the wafer edge, and is mounted on the corresponding six second steps via the six first steps, so that the edge ring is mounted at different heights on the upper surface of the tray body.

[0010] Further, in some embodiments of the present invention, the outer diameter of the edge ring is larger than the diameter of the tray body to form a supporting portion. The wafer tray also includes an annular support structure, a lifting mechanism and a rotating mechanism. The annular support structure surrounds the tray body and the edge ring to support the supporting portion of the edge ring. The lifting mechanism is used to lower the tray body so that its first positioning portion is disengaged from the second positioning portion of the edge ring, and to raise the tray body so that its first positioning portion contacts and locks the second positioning portion of the edge ring. The rotating mechanism is used to rotate the tray body after the first positioning portion is disengaged from the second positioning portion, and to adjust the alignment relationship between each first step of the first positioning portion and each second step of the second positioning portion to adjust the installation height of the edge ring.

[0011] Furthermore, in some embodiments of the present invention, the wafer tray also includes a controller, which is configured to: determine the deposition thickness distribution of the thin film deposition process on the edge of the wafer; determine the target distance between the edge ring and the tray body based on the deposition thickness distribution; lower the tray body via the lifting mechanism, and rotate the tray body according to the target distance to align each of the second steps of the edge ring with the corresponding multiple first steps; and raise the tray body via the lifting mechanism to install the edge ring to a corresponding height on the upper surface of the tray body.

[0012] Furthermore, in some embodiments of the present invention, the step of determining the deposition thickness distribution of the thin film deposition process on the edge of the wafer includes: obtaining an actual film thickness distribution and a target film thickness distribution at the edge of the wafer; and determining the deposition thickness distribution of the thin film deposition process on the edge of the wafer based on the difference between the actual film thickness distribution and the target film thickness distribution.

[0013] Furthermore, in some embodiments of the present invention, a heating element is integrated in the tray body for heating the wafer during the thin film deposition process.

[0014] In addition, the above-mentioned thin film deposition equipment provided according to the second aspect of the present invention includes a process chamber, and the process chamber is equipped with a wafer tray provided according to the first aspect of the present invention.

[0015] In addition, the above-mentioned thin film deposition method provided according to the third aspect of the present invention includes the following steps: determining the deposition thickness distribution of the thin film deposition process on the edge of the wafer; determining the target distance between the edge ring of the wafer tray provided by the first aspect of the present invention and the tray body according to the deposition thickness distribution; lowering the tray body via a lifting mechanism, and rotating the tray body according to the target distance to align each second step of the edge ring with the corresponding multiple first steps; raising the tray body via the lifting mechanism to install the edge ring to the corresponding height of the upper surface of the tray body; and performing a thin film deposition process on the wafer carried by the tray body and surrounded by the edge ring so that its edge reaches the target film thickness distribution. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0017] Figure 1 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0018] Figure 2 A schematic cross-sectional view of a wafer tray provided according to some embodiments of the present invention is shown.

[0019] Figure 3 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0020] Figure 4 A schematic structural diagram of an edge ring provided according to some embodiments of the present invention is shown.

[0021] Figure 5 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0022] Figure 6 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown.

[0023] Figure 7 A diagram showing the electron density distribution inside a wafer tray provided according to some embodiments of the present invention is shown.

[0024] Figure 8 A diagram showing the electron density distribution inside a wafer tray provided according to some embodiments of the present invention is shown.

[0025] Reference numerals:

[0026] 11 Tray body

[0027] 111 First positioning unit

[0028] 12 Edge Ring

[0029] 121 Second positioning unit

[0030] 122 Supporting part

[0031] 13 Ring support structure DETAILED DESCRIPTION

[0032] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0033] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0035] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0036] As mentioned above, during the thin film deposition process, the thickness of the film is usually thinner in the center and thicker in the edge. This uneven film thickness is particularly evident at the edge of the wafer, which usually results in a larger fluctuation range of the edge film thickness, and even high and low points with significant differences in film thickness. The prior art changes the film thickness at the edge of the wafer by installing an edge ring on the wafer tray. However, the distance between the existing edge ring and the wafer tray is fixed. If you want to change the distance, you need to open the cavity by cooling it down and replace the edge accessories, which significantly reduces the efficiency of the thin film deposition process.

[0037] In order to overcome the above-mentioned defects of the prior art, the present invention provides a wafer tray, a thin film deposition device and a thin film deposition method. By providing a positioning portion with multiple steps of different heights, an edge ring can be installed at different heights on the upper surface of the tray body to automatically adjust the distance between the edge ring and the wafer it surrounds, so as to adjust the plasma density at the edge of the wafer in the subsequent thin film deposition process.

[0038] In a non-limiting embodiment, the thin film deposition apparatus provided in the second aspect of the present invention includes a process chamber, wherein the process chamber is provided with a wafer tray provided in the first aspect of the present invention.

[0039] Please refer to the reference for details Figure 1 to Figure 4 . Figure 1 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown. Figure 2 A schematic cross-sectional view of a wafer tray provided according to some embodiments of the present invention is shown. Figure 3 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown. Figure 4 A schematic structural diagram of an edge ring provided according to some embodiments of the present invention is shown.

[0040] exist Figure 1 to Figure 4 In the illustrated embodiment, the wafer tray provided by the first aspect of the present invention includes a tray body 11 and an edge ring 12. A plurality of first positioning portions 111 are provided at the edge of the upper surface of the tray body 11. Here, a plurality of first steps of different heights are provided in each of the first positioning portions 111. A plurality of second positioning portions 121 are provided at the edge of the lower surface of the edge ring 12. Here, a plurality of second steps of different heights are provided in each of the second positioning portions 121, which are used to cooperate with the first steps in the first positioning portions 111, install the edge ring 12 at different heights on the upper surface of the tray body 11, and surround the wafer placed on the tray body 11, so as to adjust the plasma density at the edge of the wafer in the subsequent thin film deposition process.

[0041] Further, in Figure 3 and Figure 4 In the illustrated embodiment, at least one first step of each first positioning portion 111 is provided with a positioning pin or a positioning hole, and each second step of each second positioning portion 121 is correspondingly provided with a positioning hole or a positioning pin, so as to install the edge ring 12 at different heights of the upper surface of the tray body 11.

[0042] Alternatively, in some embodiments, each first step of each first positioning portion 111 is provided with a positioning hole or a positioning pin, and at least one second step of each second positioning portion 121 is correspondingly provided with a positioning pin or a positioning hole, so as to install the edge ring 12 at different heights on the upper surface of the tray body 11.

[0043] exist Figure 1 to Figure 3 In the embodiment shown, four first positioning portions 111 are provided at the edge of the upper surface of the tray body 11. Figure 1 to Figure 4 In the illustrated embodiment, four second positioning portions 121 are provided on the edge of the lower surface of the edge ring 12 .

[0044] Further, in Figure 1 to Figure 3 In the illustrated embodiment, each first positioning portion 111 is provided with six first steps, each second positioning portion 121 is provided with six second steps, the edge ring 12 is rotated to a corresponding angle according to the film thickness distribution at the edge of the wafer, and is installed on the corresponding six second steps via the six first steps, so as to install the edge ring 12 at different heights on the upper surface of the tray body 11.

[0045] Please refer to Figure 5 . Figure 5 A schematic structural diagram of a wafer tray provided according to some embodiments of the present invention is shown.

[0046] exist Figure 5 In the illustrated embodiment, the outer diameter of the edge ring 12 is greater than the diameter of the tray body 11 to form a supporting portion 122. Here, the wafer tray provided in the first aspect of the present invention further includes an annular support structure 13, a lifting mechanism, and a rotating mechanism. The annular support structure 13 surrounds the tray body 11 and the edge ring 12 to support the supporting portion 122 of the edge ring 12. The lifting mechanism is used to lower the tray body 11 so that its first positioning portion 111 is separated from the second positioning portion 121 of the edge ring 12, and to raise the tray body 11 so that its first positioning portion 111 contacts and locks the second positioning portion 121 of the edge ring 12. The rotating mechanism is used to rotate the tray body 11 after the first positioning portion 111 is separated from the second positioning portion 121, and adjust the alignment relationship between each first step of the first positioning portion 111 and each second step of the second positioning portion 121 to adjust the installation height of the edge ring 12.

[0047] In addition, in some optional embodiments, the wafer tray provided in the first aspect of the present invention further includes a controller. Here, the controller can be connected to the lifting mechanism and the rotating mechanism to implement the thin film deposition method provided in the third aspect of the present invention.

[0048] Furthermore, in some optional embodiments, a heating element is integrated into the tray body 11 for heating the wafer during the thin film deposition process.

[0049] The working principle of the above-mentioned thin film deposition device will be described below in conjunction with some embodiments of the thin film deposition method. Those skilled in the art will understand that these embodiments of the thin film deposition method are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the thin film deposition device. Similarly, the thin film deposition device is only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these thin film deposition methods.

[0050] Please refer to Figure 6 . Figure 6 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown.

[0051] like Figure 6 As shown, the above-mentioned thin film deposition equipment provided by the second aspect of the present invention can first determine the deposition thickness distribution of the thin film deposition process on the edge of the wafer.

[0052] Specifically, the thin film deposition equipment can first obtain the actual film thickness distribution and the target film thickness distribution at the edge of the wafer, and determine the deposition thickness distribution of the thin film deposition process on the edge of the wafer based on the difference between the actual film thickness distribution and the target film thickness distribution.

[0053] In addition, the above-mentioned thin film deposition process includes a product correction process scenario in which the actual film thickness distribution is uneven but the target film thickness distribution is uniform, a customized process scenario in which the actual film thickness distribution is uniform but the target film thickness distribution is uneven, and an error compensation process scenario in which both the actual film thickness distribution and the target film thickness distribution are uniform but the film deposition rate is uneven.

[0054] Afterwards, the thin film deposition equipment may determine the target distance between the edge ring of the wafer tray and the tray body as provided in the first aspect of the present invention according to the deposition thickness distribution.

[0055] Thereafter, the thin film deposition apparatus may lower the tray body via the lifting mechanism, and rotate the tray body according to the target distance to align each second step of the edge ring with the corresponding plurality of first steps.

[0056] Thereafter, the thin film deposition apparatus may elevate the tray body via the lifting mechanism to install the edge ring to a corresponding height of the upper surface of the tray body.

[0057] Thereafter, the thin film deposition equipment can perform a thin film deposition process on the wafer carried by the tray body and surrounded by the edge ring, so that the wafer's edge reaches a target film thickness distribution.

[0058] Please refer to Figure 7 and Figure 8 . Figure 7 A diagram showing the electron density distribution inside a wafer tray provided according to some embodiments of the present invention is shown. Figure 8 A diagram showing the electron density distribution inside a wafer tray provided according to some embodiments of the present invention is shown.

[0059] like Figure 7 and Figure 8 As shown, the wafer tray provided by the first aspect of the present invention can reduce the longitudinal distance between the edge ring and the wafer to reduce the area with higher electron density, thereby reducing the deposition rate at the edge, thereby avoiding the problem of excessive film deposition at the edge of the wafer. In this way, the wafer tray provided by the first aspect of the present invention can adjust the distance between the edge ring 12 and the wafer it surrounds according to the distribution of film thickness on the wafer surface during the film deposition process to adjust the film thickness at the edge of the wafer, thereby improving the uniformity of the film deposited on the wafer surface.

[0060] In summary, the above-mentioned wafer tray, thin film deposition equipment and thin film deposition method provided by the present invention can install the edge ring at different heights on the upper surface of the tray body by providing a positioning portion with multiple steps of different heights, so as to automatically adjust the distance between the edge ring and the wafer it surrounds, so as to adjust the plasma density at the edge of the wafer in the subsequent thin film deposition process.

[0061] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0062] Those skilled in the art will appreciate that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips cited throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.

[0063] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described above in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.

[0064] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or executed with a general purpose processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general purpose processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in cooperation with a DSP core, or any other such configuration.

[0065] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0066] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0067] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A wafer tray, characterized in that: include: The tray body has a plurality of first positioning portions at the edge of the upper surface thereof, wherein each of the first positioning portions is provided with a plurality of first steps of different heights; and An edge ring has a plurality of second positioning portions on the edge of its lower surface, wherein each of the second positioning portions is provided with a plurality of second steps of different heights for cooperating with the first steps in the first positioning portion, so as to install the edge ring at different heights on the upper surface of the tray body and surround the wafer placed on the tray body, so as to adjust the plasma density at the edge of the wafer in the subsequent thin film deposition process.

2. The wafer tray according to claim 1, wherein: Each of the first steps of each of the first positioning parts is provided with a positioning hole or a positioning pin, and at least one of the second steps of each of the second positioning parts is provided with a positioning pin or a positioning hole, so as to install the edge ring at different heights of the upper surface of the tray body, or At least one of the first steps of each of the first positioning parts is provided with a positioning pin or a positioning hole, and each of the second steps of each of the second positioning parts is correspondingly provided with a positioning hole or a positioning pin, so as to install the edge ring at different heights of the upper surface of the tray body.

3. The wafer tray according to claim 1, wherein: Four first positioning portions are disposed on the edge of the upper surface of the tray body, and four second positioning portions are disposed on the edge of the lower surface of the edge ring.

4. The wafer tray according to claim 3, characterized in that: Six first steps are provided in each of the first positioning portions, and six second steps are provided in each of the second positioning portions. The edge ring is rotated to a corresponding angle according to the film thickness distribution at the edge of the wafer, and is installed on the corresponding six second steps via the six first steps, so as to install the edge ring at different heights on the upper surface of the tray body.

5. The wafer tray according to claim 1, wherein: The outer diameter of the edge ring is greater than the diameter of the tray body to form a supporting portion, and the wafer tray also includes: an annular support structure surrounding the tray body and the edge ring to support the supporting portion of the edge ring; a lifting mechanism for lowering the tray body so that the first positioning portion thereof is disengaged from the second positioning portion of the edge ring, and raising the tray body so that the first positioning portion thereof contacts and locks the second positioning portion of the edge ring; and The rotating mechanism is used to rotate the tray body after the first positioning portion is separated from the second positioning portion, and adjust the alignment relationship between each first step of the first positioning portion and each second step of the second positioning portion to adjust the installation height of the edge ring.

6. The wafer tray according to claim 5, characterized in that: The wafer tray also includes a controller configured to: Determining a deposition thickness distribution of the thin film deposition process on an edge of the wafer; determining a target distance between the edge ring and the tray body according to the deposition thickness distribution; lowering the tray body via the lifting mechanism and rotating the tray body according to the target distance to align each of the second steps of the edge ring with the corresponding plurality of first steps; and The tray body is raised via the lifting mechanism to install the edge ring to a corresponding height of the upper surface of the tray body.

7. The wafer tray according to claim 6, wherein: The step of determining the deposition thickness distribution of the thin film deposition process on the edge of the wafer comprises: Obtaining an actual film thickness distribution and a target film thickness distribution at the wafer edge; and The deposition thickness distribution of the thin film deposition process on the wafer edge is determined according to the difference between the actual film thickness distribution and the target film thickness distribution.

8. The wafer tray according to claim 1, wherein: A heating element is integrated into the tray body for heating the wafer during the thin film deposition process.

9. A thin film deposition device, characterized in that: The thin film deposition equipment comprises a process chamber, and the process chamber is provided with a wafer tray as claimed in any one of claims 1 to 8.

10. A thin film deposition method, characterized in that: The following steps are involved: Determine the deposition thickness distribution of thin film deposition processes to the wafer edge; Determining a target distance between an edge ring of a wafer tray and a tray body according to any one of claims 1 to 8 according to the deposition thickness distribution; lowering the tray body via a lifting mechanism, and rotating the tray body according to the target distance to align each second step of the edge ring with the corresponding plurality of first steps; raising the tray body via the lifting mechanism to install the edge ring to a corresponding height of the upper surface of the tray body; and A thin film deposition process is performed on the wafer carried by the tray body and surrounded by the edge ring, so that the edge of the wafer reaches the target film thickness distribution.

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