Molded package with temperature sensing cavity and power module

Abstract

The invention discloses a molded package with a temperature sensing cavity and a power module. A molded package includes: a molding compound; a first power semiconductor die encapsulated by a molding compound; and a first temperature sensing cavity formed in a surface of the molding compound. The molded package is free of temperature sensing terminals. The first temperature sensing cavity is sized to accommodate the temperature sensor, and / or a combined area of each sidewall and bottom of the first temperature sensing cavity is larger than an area in a surface of the molding compound defining an opening of the first temperature sensing cavity. A corresponding power module and a power electronic assembly comprising the molded package or the power module are also described.

Description

Background Art

[0001] Some types of molded packages and power modules used in power applications (e.g., main inverters, battery management systems, on-board chargers, etc.) do not have internal temperature sensing capabilities. For these types of packages and modules, temperature sensing is typically achieved by direct contact using an external temperature sensor to measure the external temperature of the molded body (for packages) or module frame (for power modules). However, the molded body or module frame external temperature is very different from the actual temperature of each die (chip) included in the molded package or power module. For IR (infrared) temperature sensing, the absorption coefficient of the molded body or module frame material changes over time due to aging, further reducing the die temperature sensing accuracy.

[0002] Therefore, improved designs are needed for molded packages and power modules that do not have internal temperature sensing capabilities. Summary of the invention

[0003] According to an embodiment of a molded package, the molded package includes: a molding compound; a first power semiconductor die, the first power semiconductor die being encapsulated by the molding compound; and a first temperature sensing cavity, the first temperature sensing cavity being formed in a surface of the molding compound, wherein the molded package has no temperature sensing terminal, wherein a size of the first temperature sensing cavity is set to: accommodate a temperature sensor, and / or a combined area of ​​each side wall and a bottom of the first temperature sensing cavity is larger than an area of ​​an opening in the surface of the molding compound that defines the first temperature sensing cavity.

[0004] According to an embodiment of a power module, the power module includes: an electrically insulating frame; a cover; a first power semiconductor die, the first power semiconductor die is attached to a substrate and surrounded by the electrically insulating frame, the cover and the substrate; and an opening in the cover, wherein the size of the opening in the cover is set to accommodate a temperature sensor.

[0005] According to an embodiment of a power electronic system, the power electronic system includes: a circuit board; a molded package, which is mounted to the circuit board; and a temperature sensor, wherein the molded package includes: a molding compound; a first power semiconductor die, which is encapsulated by the molding compound; and a first temperature sensing cavity, which is formed in a surface of the molding compound, wherein the molded package has no temperature sensing terminals, wherein the size of the first temperature sensing cavity is set to: accommodate the temperature sensor, and / or the combined area of ​​each side wall and the bottom of the first temperature sensing cavity is larger than the area of ​​the opening in the surface of the molding compound that defines the first temperature sensing cavity.

[0006] According to an embodiment of a power electronic system, the power electronic system includes: a circuit board; a power module, which is mounted to the circuit board; and a temperature sensor, wherein the power module includes: an electrically insulating frame; a first power semiconductor die, which is surrounded by the electrically insulating frame; and a first temperature sensing cavity, which is formed in a surface of the electrically insulating frame, wherein the size of the first temperature sensing cavity is set to: accommodate the temperature sensor, and / or the combined area of ​​each side wall and the bottom of the first temperature sensing cavity is larger than the area of ​​an opening in the surface of the electrically insulating frame that defines the first temperature sensing cavity.

[0007] Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The elements in the drawings are not necessarily to scale with respect to each other. Similar reference numerals refer to corresponding similar parts. Unless the features of the various illustrated embodiments are mutually exclusive, they may be combined. The embodiments are depicted in the drawings and described in detail in the following description.

[0009] Figure 1 A top perspective view of a molded package without temperature sensing terminals but with at least one temperature sensing cavity is shown.

[0010] Figure 2 The molded package according to the embodiment is shown along Figure 1 A cross-sectional view along the line marked AA' in FIG.

[0011] Figure 3 The molded package according to another embodiment is shown along Figure 1 A cross-sectional view along the line marked AA' in FIG.

[0012] Figure 4 The molded package according to another embodiment is shown along Figure 1 A cross-sectional view along the line marked AA' in FIG.

[0013] Figure 5 A partial top perspective view of a molded package according to another embodiment is shown.

[0014] Figure 6 The molded package according to another embodiment is shown along Figure 1 A cross-sectional view along the line marked AA' in FIG.

[0015] Figure 7 The molded package according to another embodiment is shown along Figure 1 A cross-sectional view along the line marked AA' in FIG.

[0016] Figure 8 A cross-sectional view of a power module is shown.

[0017] Fig. 9 A cross-sectional view of a power module according to another embodiment is shown.

[0018] Fig.10 A cross-sectional view of a power module according to another embodiment is shown. DETAILED DESCRIPTION

[0019] The embodiments described herein provide a design for molded packages and power modules that do not have internal temperature sensing capabilities. The design includes a temperature sensing cavity formed in the surface of the mold compound of the molded package or in the surface of the electrically insulating frame of the power module. The temperature sensing cavity is arranged close to the power semiconductor die included in the molded package or the power module to achieve accurate die temperature sensing. Sensing the temperature at the temperature sensing cavity will obtain a temperature measurement that is closer to the die temperature than sensing the temperature at the outer surface of the molded package or the power module. For example, depending on the number of power semiconductor dies (chips) included in the molded package or the power module, more than one temperature sensing cavity may be provided.

[0020] In some embodiments, the temperature measurement is performed by a temperature sensor, such as an NTC (negative temperature coefficient) sensor located in a temperature sensing cavity. In these embodiments, the temperature sensing cavity is sized to accommodate the temperature sensor.

[0021] In other embodiments, temperature sensing is performed based on radiation emitted from a temperature sensing cavity formed in the mold compound (for molded packages) or the electrically insulating frame (for power modules). The temperature sensing cavity nearly simulates an ideal black body having an absorptivity / emmittance of 1 at all wavelengths. For example, in the IR (infrared) band, the temperature sensing cavity may have an emittance between 0.9 and 1.0. An IR (infrared) sensor may be located at the temperature sensing cavity to detect black body radiation emitted from the temperature sensing cavity, which is almost independent of mold compound aging.

[0022] Next, exemplary embodiments of a molded package and a power module having a temperature sensing cavity and a corresponding power electronic system for high power applications are described with reference to the accompanying drawings.

[0023] Figure 1A top perspective view of a molded package 100 is shown. The molded package 100 includes a mold compound 102 and a power semiconductor die (chip) 104 encapsulated by the mold compound 102. The mold compound 102 is a plastic encapsulation typically formed of an organic resin (e.g., epoxy resin). The plastic encapsulation may include fillers, such as non-melting inorganic materials. Catalysts may be used to accelerate the curing reaction of the organic resin. Other materials (e.g., flame retardants, adhesion promoters, ion trapping agents, stress relief agents, colorants, etc.) may be added to the plastic encapsulation, if appropriate.

[0024] The power semiconductor die 104 encapsulated by the mold compound 102 forms part of a power electronic circuit, such as a DC / AC inverter, a DC / DC converter, an AC / DC converter, a DC / AC converter, an AC / AC converter, a multiphase inverter, an H-bridge, etc. The power semiconductor die 104 can be a power transistor die, a power diode die, a half-bridge die, etc., or a die combining a logic device and a power device on the same semiconductor substrate. In one embodiment, the power semiconductor die 104 is a power transistor die, such as a power Si MOSFET (metal oxide semiconductor field effect transistor) die, an IGBT (insulated gate bipolar transistor) die, a SiC MOSFET die, a GaN HEMT (high electron mobility transistor) die, a JFET (junction field effect transistor) die, etc.

[0025] The power semiconductor die 104 is Figure 1 1 is obscured from view by the mold compound 102 and is therefore shown using a dashed rectangle. More than one power semiconductor die 104 may be included in the molded package 100 .

[0026] The molded package 100 also includes leads 106 extending through one or more sides 108 of the mold compound 102. The leads 106 may be part of a metal lead frame, with the power semiconductor die 104 attached to another part of the metal lead frame. In the case where a single power transistor die 104 is included in the molded package 100 or two or more power transistor dies 104 are included in the molded package 100 and electrically coupled in parallel to form a power switching device, the leads 106 may include a drain or collector lead 106_1, a source or emitter lead 106_2, a gate lead 106_3, and a source sense lead 106_4.

[0027] The molded package 100 may include additional leads 106, depending on the number and type of power semiconductor dies 104 included in the molded package 100. For example, the molded package 100 may include a half-bridge having a high-side switch device implemented by one or more first power transistor dies 104 and a low-side switch device implemented by one or more second power transistor dies 104. One set of leads 106 may be used for the high-side switch device, and another set of leads 106 may be used for the low-side switch device. The internal electrical connections to each power semiconductor die 104 are at Figure 1 is obscured from view by the mold compound 102 and is therefore not shown.

[0028] exist Figure 1 In the embodiment of the present invention, the molded package 100 has no temperature sensing terminals. This means that the molded package 100 does not have internal temperature sensing capabilities. In order to help accurately sense the temperature of each power semiconductor die 104 included in the molded package 100, a temperature sensing cavity 110 is formed in the front surface 112 of the mold compound 102. The temperature sensing cavity 110 can be aligned with the power semiconductor die 104 or with another part located inside the package (such as a metal clamp, a bonding wire, etc., which may be the hottest part of the package 100).

[0029] Each temperature sensing cavity 110 is sized to accommodate a temperature sensor, and / or the combined area of ​​each sidewall and bottom of the first temperature sensing cavity 110 is larger than the area of ​​the opening 114 in the surface 112 of the mold compound 102 that defines the temperature sensing cavity 110. Figure 1 ) may be located in a corresponding temperature sensing cavity 110 to provide direct temperature measurement; or an infrared sensor ( Figure 1 ) can be aligned with the temperature sensing cavity 110 for providing indirect temperature measurement in the IR spectrum based on blackbody radiation emitted by the temperature sensing cavity 110.

[0030] Figure 2 The molded package 100 according to the embodiment is shown along Figure 1 A cross-sectional view of the line marked A-A' in FIG. Figure 2 In the embodiment, the mold compound 102 has a thickness T_MC of less than 1 mm (millimeter) at the bottom 200 of the temperature sensing cavity 110. For example, the thickness T_MC of the mold compound 102 at the bottom 200 of the temperature sensing cavity 110 may be 200 μm (micrometers) or less.

[0031] exist Figure 2, each sidewall 202 of the temperature sensing cavity 110 is shown as being tapered such that the opening 114 in the surface 112 of the mold compound 102 that defines the temperature sensing cavity 110 is larger than the area of ​​the bottom 200 of the temperature sensing cavity 110. For example, the temperature sensing cavity 110 may have the shape of a cylinder with tapered sidewalls 202. If the temperature sensing cavity 110 is formed during the molding process, the sidewalls 202 may be tapered. If the temperature sensing cavity 110 is formed after molding, the sidewalls 202 may alternatively not have a taper. In one embodiment, the combined area of ​​the bottom 200 of the temperature sensing cavity 110 (B_Area) and the cylindrical portion of the temperature sensing cavity 110 defined by the sidewalls 202 (C_Area) is larger than the area of ​​the opening 114 (O_Area) in the surface 112 of the mold compound 102 that delineates the temperature sensing cavity 110, i.e., (B_Area+C_Area)>O_Area, to ensure optimal blackbody radiation emission from the temperature sensing cavity 110 in the IR spectrum.

[0032] Each sidewall 202 of the temperature sensing cavity 110 may be roughened to enhance the black body radiation emission characteristics of the temperature sensing cavity 110 in the IR spectrum. In one embodiment, the temperature sensing cavity 110 is formed after molding by drilling (laser drilling, mechanical drilling, etc.) the temperature sensing cavity 110 into the front surface 112 of the mold compound 102. The laser drilling process may roughen each sidewall 202 of the temperature sensing cavity 110. In another embodiment, the temperature sensing cavity 110 is formed during molding, and each sidewall 202 of the temperature sensing cavity 110 is roughened by a post-molding roughening process (e.g., mechanical roughening).

[0033] like Figure 2 As shown, the power semiconductor die 104 can be attached to a substrate 204 encapsulated by the mold compound 102. The substrate 204 can be an insulated metal substrate (IMS), a DBC (direct bonded copper) substrate, an AMB (active metal brazing) substrate, a portion of a lead frame, etc. The metallized back side of the substrate 204 (at Figure 2 ) may be exposed from the mold compound 102 to enable bottom side cooling of the molded package 100.

[0034] Some of the internal electrical connections to each power semiconductor die 104 included in the molded package 100 are Figure 2 For example, in Figure 2, the drain / collector potential may be applied to a metallized portion of the substrate 204 via a drain / collector lead 106_1 of the molded package 100. The drain / collector terminal of the power semiconductor die 104 may be located at the back side of the die 104 and attached to a portion of the substrate 204 at drain / collector potential. The gate and source terminals of the power semiconductor die 104 may be located at the front side of the die 104 and electrically connected to a source / emitter lead 106_2 and a gate lead 106_3 of the molded package 100, respectively, via one or more bonding wires, wire straps, metal clamps, etc. The internal source / emitter and gate connections to the power semiconductor die 104 are Figure 2 1 to provide an unobstructed view of the temperature sensing cavity 110 formed in the front surface 112 of the mold compound 102.

[0035] If more than one power semiconductor die 104 is included in the molded package 100, an additional temperature sensing cavity 110' may be formed in the front surface 112 of the mold compound 102, for example, proximate each additional power semiconductor die 104. For example, a second power semiconductor die 104' may be encapsulated by the mold compound 102 and electrically connected to the first power semiconductor die 104 to form part of a power electronic circuit, for example, one or more switching devices of a half bridge. In this example, a second temperature sensing cavity 110' may be formed in the front surface 112 of the mold compound 102 proximate the second power semiconductor die 104'. Similar to the first temperature sensing cavity 110, the second temperature sensing cavity 110' is sized to accommodate a temperature sensor, and / or the combined area of ​​each sidewall 101 and bottom 200 of the second temperature sensing cavity 110' is greater than the area of ​​the opening 114' in the front surface 112 of the mold compound 102 that defines the second temperature sensing cavity 110'.

[0036] Figure 3 The molded package 100 according to another embodiment is shown along Figure 1 A cross-sectional view of the line marked A-A' in FIG. Figure 3 In one embodiment, the mold compound 102 is completely removed from the bottom 200 of the temperature sensing cavity 110. In one embodiment, the power semiconductor die 104 or a metal structure (eg, a metal clamp) attached to the power semiconductor die 104 is Figure 3 The molded portion 200 (not shown) is exposed from the molding compound at the bottom 200 of the temperature sensing cavity 110.

[0037] Figure 4 The molded package 100 according to another embodiment is shown along Figure 1 A cross-sectional view of the line marked A-A' in FIG. Figure 4In the embodiment of the present invention, the "black" material 300 covers the power semiconductor die 104 or metal structure exposed from the mold compound 102 at the bottom 200 of the temperature sensing cavity 110. For example, the exposed elements can be dyed black to enhance the blackbody emission characteristics of the temperature sensing cavity 110 in the IR spectrum. In another example, the lower portion of the temperature sensing cavity 110 can be filled with black silicone, black thermal grease, black potting compound, black resist, or other types of "black" materials. An ideal black body allows all incident radiation to enter it (no reflected energy) and absorbs all incident radiation internally (no energy is transmitted through the black body). Figure 4 The material 300 in is considered "black" because it is an ideal black body or a non-ideal black body that absorbs almost all (e.g., at least 90%) of the incident radiation in the IR spectrum. The "black" material 300 may also cover at least a portion of the cavity sidewalls 202 and may also cover a portion of the package top side 112.

[0038] Figure 5 A partial top perspective view of a molded package 100 according to another embodiment is shown. Figure 5 In FIG. 1 , the temperature sensing cavity 110 has a cross shape in a horizontal cross section. Figure 1 , the temperature sensing cavity 110 has a circular or round shape in horizontal cross-section. More generally, the temperature sensing cavity 110 can have any desired shape in horizontal cross-section. For example, the temperature sensing cavity 110 can alternatively have a square shape, a rectangular shape, a hexagonal shape, a triangular shape, etc. in horizontal cross-section. In each case, the temperature sensing cavity 110 is sized to accommodate the temperature sensor, and / or the combined area of ​​each side wall 202 and the bottom 200 of the temperature sensing cavity 110 is greater than the area of ​​the opening 114 in the front surface 112 of the mold compound 102 that defines the temperature sensing cavity 110.

[0039] Figure 6 The molded package 100 according to another embodiment is shown along Figure 1 A cross-sectional view of the line marked A-A' in FIG. Figure 6 , the temperature sensor 400 is located in the temperature sensing cavity 110. The temperature sensor 400 can be mounted to a printed circuit board (PCB) or other type of support structure 402. The temperature sensor 400 provides a direct temperature measurement inside the temperature sensing cavity 110. For example, the temperature sensor 400 can be an NTC sensor, a temperature sensing diode, a temperature sensing resistor, a thermocouple, etc. For example, the temperature sensor 400 can be coated with epoxy.

[0040] Figure 7 The molded package 100 according to another embodiment is shown along Figure 1A cross-sectional view of the line marked A-A' in FIG. Figure 7 , an infrared (IR) temperature sensor 500 is aligned with the temperature sensing cavity 110. The IR temperature sensor 500 detects black body radiation 502 in the IR spectrum emitted from the temperature sensing cavity 110 by the molded package 100. The IR temperature sensor 500 can be part of an IR camera system for detecting black body radiation 502 in the IR spectrum emitted from each temperature sensing cavity 110, 110' by the molded package 100.

[0041] Figure 8 A cross-sectional view of a power module 600 is shown. The power module 600 includes an electrically insulating frame 602, a cover (cover plate) 604, one or more power semiconductor die 606 attached to and surrounded by a substrate 608. The power semiconductor die (s) 606 may form one or more switching devices, such as a half-bridge. The substrate 608 may be an IMS, a DBC substrate, an AMB substrate, part of a lead frame, etc. The opening 610 in the cover 604 is sized to accommodate a temperature sensor ( Figure 8 ). The power module 600 also has leads / terminals 612 that extend from the electrically insulating frame 602 and provide power and / or signal connections to each die 606 included in the module 600 .

[0042] The power module 600 may also include an electrically insulating encapsulation 614 covering each power semiconductor die 606. The electrically insulating encapsulation 614 may be a silicone gel, a potting material, etc. The height "h" of the electrically insulating encapsulation 614 may extend to the bottom side of the cover 604. A temperature sensing cavity 616 may be formed in a surface 618 of the electrically insulating encapsulation 614 facing the cover 604. The temperature sensing cavity 616 is aligned with the opening 610 in the cover 604.

[0043] For example, the temperature sensing cavity 616 can be formed by mechanical or laser drilling. The temperature sensing cavity 616 can alternatively be formed during potting (e.g., by using a stamping device). In each case, the temperature sensing cavity 616 is sized to accommodate the temperature sensor, and / or the combined area of ​​each side wall 620 and bottom 622 of the temperature sensing cavity 616 is greater than the area of ​​the opening 610 in the cover 604 to ensure optimal black body radiation emission from the temperature sensing cavity 616 in the IR spectrum. In one embodiment, the electrically insulating encapsulant 614 absorbs at least 90% of the incident radiation in the IR spectrum and is therefore considered a "black" material. For example, the electrically insulating encapsulant 614 can be a dyed silicone gel or potting material.

[0044] Fig. 9FIG. 4 shows a cross-sectional view of a power module 600 according to another embodiment. Fig. 9 6, an infrared (IR) temperature sensor 500 is inserted into an opening 610 in a cover 604 and is located in a temperature sensing cavity 616 formed in an electrically insulating enclosure 614. The IR temperature sensor 500 detects black body radiation 502 in the IR spectrum emitted from the temperature sensing cavity 616. The IR temperature sensor 500 can be part of an IR camera system for detecting black body radiation 502 in the IR spectrum emitted from the temperature sensing cavity 616.

[0045] Fig.10 FIG. 4 shows a cross-sectional view of a power module 600 according to another embodiment. Fig.10 , the temperature sensor 400 is located in a temperature sensing cavity 616 formed in an electrically insulating enclosure 614. The temperature sensor 400 provides direct temperature measurement inside the temperature sensing cavity 616. For example, the temperature sensor 400 may be an NTC sensor, a temperature sensing diode, a temperature sensing resistor, a thermocouple, etc. For example, the temperature sensor 400 may be coated with epoxy.

[0046] The power electronic system 800 including the circuit board may further include the molded package 100 mounted to the circuit board and a temperature sensor. The temperature sensing cavity 110 of the molded package 100 is sized to accommodate the temperature sensor and / or the combined area of ​​each side wall 202 and the bottom 200 of the temperature sensing cavity 110 is larger than the area of ​​the opening 114 defining the temperature sensing cavity 110 in the front surface 112 of the mold compound 102. The power electronic system 800 may use the power module 600 instead of the molded package 100.

[0047] In either case, the temperature sensor may be located in the temperature sensing cavity 110 / 616 or an infrared sensor aligned with the temperature sensing cavity 110 / 616. As previously explained herein, the molded package 100 or power module 600 may include more than one power semiconductor die 104 and a temperature sensing cavity 110 / 616 proximate to each power semiconductor die 104 or the hottest internal portion. In this case, the temperature sensor may be a portion of an infrared camera configured to detect black body radiation emitted from each temperature sensing cavity 110 / 616 by the molded package 100 or power module 600 in the IR spectrum.

[0048] Although the present disclosure is not limited in this regard, the following numbered examples demonstrate one or more aspects of the present disclosure.

[0049] Example 1: A molded package comprising: a molding compound; a first power semiconductor die, the first power semiconductor die being encapsulated by the molding compound; and a first temperature sensing cavity, the first temperature sensing cavity being formed in a surface of the molding compound, wherein the molded package has no temperature sensing terminal, wherein a size of the first temperature sensing cavity is set to: accommodate a temperature sensor, and / or a combined area of ​​each side wall and a bottom of the first temperature sensing cavity is greater than an area of ​​an opening in the surface of the molding compound defining the first temperature sensing cavity.

[0050] Example 2: The molded package of Example 1, wherein the molding compound has a thickness of less than 1 mm at the bottom of the first temperature sensing cavity.

[0051] Example 3: The molded package of Example 2, wherein a thickness of the molding compound at a bottom of the first temperature sensing cavity is 200 μm or less.

[0052] Example 4: The molded package of Example 1, wherein the molding compound is completely removed from the bottom of the first temperature sensing cavity.

[0053] Example 5: The molded package of Example 4, further comprising a material covering a bottom of the first temperature sensing cavity and absorbing at least 90% of incident radiation in the IR spectrum.

[0054] Example 6: The molded package of any of Examples 1 to 5, wherein the first power semiconductor die or a metal structure attached to the first power semiconductor die is exposed from the mold compound at a bottom of the first temperature sensing cavity.

[0055] Example 7: The molded package of Example 6, further comprising a material covering the first power semiconductor die or metal structure exposed from the mold compound at the bottom of the first temperature sensing cavity and absorbing at least 90% of incident radiation in the IR spectrum.

[0056] Example 8: The molded package of any of Examples 1 to 7, wherein each sidewall of the first temperature sensing cavity is tapered.

[0057] Example 9: The molded package of any of Examples 1 to 8, wherein each sidewall of the first temperature sensing cavity is roughened.

[0058] Example 10: The molded package of any of Examples 1 to 9, further comprising a temperature sensor located in the first temperature sensing cavity.

[0059] Example 11: According to any one of Examples 1 to 10, the molded package further includes: a second power semiconductor die, which is encapsulated by the molding compound and electrically connected to the first power semiconductor die to form part of the power electronic circuit; and a second temperature sensing cavity, which is formed in the surface of the molding compound, wherein the size of the second temperature sensing cavity is set to: accommodate the temperature sensor, and / or the combined area of ​​each side wall and the bottom of the second temperature sensing cavity is larger than the area of ​​the opening in the surface of the molding compound that defines the second temperature sensing cavity.

[0060] Example 12: A power module comprising: an electrically insulating frame; a cover; a first power semiconductor die attached to a substrate and surrounded by the electrically insulating frame, the cover and the substrate; and an opening in the cover, wherein the opening in the cover is sized to accommodate a temperature sensor.

[0061] Example 13: The power module of Example 12, further comprising a temperature sensor inserted into the opening in the cover.

[0062] Example 14: The power module according to Example 12 or 13 further includes: an electrically insulating encapsulant covering the first power semiconductor die; and a temperature sensing cavity formed in a surface of the electrically insulating encapsulant facing the cover, wherein the temperature sensing cavity is aligned with the opening in the cover, wherein the size of the temperature sensing cavity is set to: accommodate the temperature sensor, and / or the combined area of ​​each side wall and bottom of the temperature sensing cavity is larger than the area of ​​the opening in the cover.

[0063] Example 15: The power module of Example 14, further comprising a temperature sensor inserted into the opening in the cover and located in the temperature sensing cavity.

[0064] Example 16: The power module of Example 14 or 15, wherein the electrically insulating encapsulation absorbs at least 90% of incident radiation in the IR spectrum.

[0065] Example 17: A power electronic system comprising: a circuit board; a molded package mounted to the circuit board; and a temperature sensor, wherein the molded package comprises: a molding compound; a first power semiconductor die encapsulated by the molding compound; and a first temperature sensing cavity formed in a surface of the molding compound, wherein the molded package has no temperature sensing terminals, wherein a size of the first temperature sensing cavity is set to: accommodate the temperature sensor, and / or the combined area of ​​each side wall and bottom of the first temperature sensing cavity is greater than the area of ​​an opening in the surface of the molding compound that defines the first temperature sensing cavity.

[0066] Example 18: The power electronic system of Example 17, wherein the temperature sensor is an NTC (negative temperature coefficient) sensor located in the first temperature sensing cavity.

[0067] Example 19: The power electronics system of Example 17, wherein the temperature sensor is an infrared sensor aligned with the first temperature sensing cavity.

[0068] Example 20: A power electronic system according to any of Examples 17 to 19, wherein the molded package includes a plurality of power semiconductor dies encapsulated by a molding compound and a temperature sensing cavity formed in a surface of the molding compound proximate to each power semiconductor die, and wherein the temperature sensor is an infrared camera configured to detect a portion of the IR spectrum of black body radiation emitted by the molded package from each temperature sensing cavity.

[0069] Example 21: A power electronic system comprising: a circuit board; a power module mounted to the circuit board; and a temperature sensor, wherein the power module comprises: an electrically insulating frame; a cover; a first power semiconductor die attached to a substrate and surrounded by the electrically insulating frame, the cover and the substrate; and an opening in the cover, wherein the size of the opening in the cover is set to accommodate the temperature sensor.

[0070] Example 22: The power electronic system of Example 21, wherein the temperature sensor is an NTC (negative temperature coefficient) sensor located in the temperature sensing cavity.

[0071] Example 23: The power electronics system of Example 21, wherein the temperature sensor is an infrared sensor aligned with the temperature sensing cavity.

[0072] Example 24: A power electronic system according to any one of Examples 21 to 23, wherein the power module includes: a plurality of power semiconductor die surrounded by an electrically insulating frame, a cover and a substrate; and an opening in the cover proximate each power semiconductor die, and wherein the temperature sensor is a portion of an infrared camera configured to detect blackbody radiation in the IR spectrum emitted from each opening in the cover.

[0073] Terms such as "first", "second", etc. are used to describe various elements, regions, parts, etc., and are not intended to be limiting. Throughout the specification, the same terms refer to the same elements.

[0074] As used herein, the terms "having," "containing," "including," "comprising," and the like are open-ended terms that indicate the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly indicates otherwise, the articles "a," "an," and "the" are intended to include the plural as well as the singular.

[0075] Unless otherwise expressly stated, the expression "and / or" should be interpreted as including all possible conjoint and disjoint combinations. For example, the expression "and / or" should be interpreted as meaning only A, only B, or both A and B. Unless otherwise expressly stated, the expression "at least one of..." should be interpreted in the same way as "and / or". For example, the expression "at least one of A and B" should be interpreted as meaning only A, only B, or both A and B.

[0076] It should be understood that the features of the various embodiments described herein may be combined with each other, unless specifically stated otherwise.

[0077] Although specific embodiments have been shown and described herein, it will be appreciated by those of ordinary skill in the art that various alternative and / or equivalent embodiments may be substituted for the specific embodiments shown and described without departing from the scope of the invention. This application is intended to cover any adjustments or modifications to the specific embodiments discussed herein. Therefore, it is intended that the present invention be limited only by the claims and their equivalents.

Claims

1. A molded package comprising: Molding compounds; a first power semiconductor die encapsulated by the molding compound; as well as a first temperature sensing cavity formed in a surface of the molding compound, wherein the molded package has no temperature sensing terminal, The size of the first temperature sensing cavity is set to accommodate the temperature sensor, and / or the combined area of ​​each side wall and the bottom of the first temperature sensing cavity is larger than the area of ​​the opening in the surface of the molding compound that defines the first temperature sensing cavity.

2. The molded package according to claim 1, wherein: The molding compound has a thickness of less than 1 mm at the bottom of the first temperature sensing cavity.

3. The molded package according to claim 2, wherein: The thickness of the mold compound is 200 μm or less at the bottom of the first temperature sensing cavity.

4. The molded package according to claim 1, wherein: The molding compound is completely removed from the bottom of the first temperature sensing cavity.

5. The molded package of claim 4, further comprising a material covering the bottom of the first temperature sensing cavity and absorbing at least 90% of incident radiation in the IR spectrum.

6. The molded package according to claim 1, wherein: The first power semiconductor die or a metal structure attached to the first power semiconductor die is exposed from the mold compound at the bottom of the first temperature sensing cavity.

7. The molded package of claim 6, further comprising a material covering the first power semiconductor die or the metal structure exposed from the mold compound at the bottom of the first temperature sensing cavity and absorbing at least 90% of incident radiation in the IR spectrum.

8. The molded package of claim 1, wherein: Each side wall of the first temperature sensing cavity is tapered.

9. The molded package according to claim 1, wherein: Each sidewall of the first temperature sensing cavity is roughened.

10. The molded package of claim 1, further comprising a temperature sensor located in the first temperature sensing cavity.

11. The molded package of claim 1 , further comprising: a second power semiconductor die encapsulated by the mold compound and electrically connected to the first power semiconductor die to form part of a power electronic circuit; as well as a second temperature sensing cavity formed in a surface of the molding compound, The size of the second temperature sensing cavity is set to accommodate the temperature sensor, and / or the combined area of ​​each side wall and the bottom of the second temperature sensing cavity is larger than the area of ​​the opening in the surface of the molding compound that defines the second temperature sensing cavity.

12. A power module, comprising: Electrically insulating frame; build; a first power semiconductor die attached to a substrate and surrounded by the electrically insulating frame, the cover, and the substrate; as well as an opening in the cover, Wherein the opening in the cover is sized to accommodate a temperature sensor. 13 . The power module of claim 12 , further comprising a temperature sensor inserted into the opening in the cover.

14. The power module according to claim 12, further comprising: an electrically insulating encapsulation covering the first power semiconductor die; as well as a temperature sensing cavity formed in a surface of the electrically insulating enclosure facing the cover, wherein the temperature sensing cavity is aligned with the opening in the cover, The size of the temperature sensing cavity is set to accommodate the temperature sensor, and / or the combined area of ​​each side wall and the bottom of the temperature sensing cavity is larger than the area of ​​the opening in the cover. 15 . The power module of claim 14 , further comprising a temperature sensor inserted into the opening in the cover and located in the temperature sensing cavity.

16. The power module according to claim 14, wherein: The electrically insulating encapsulation absorbs at least 90% of incident radiation in the IR spectrum.

17. A power electronic system comprising: Printed circuit boards; a molded package attached to the circuit board; as well as Temperature sensor, Wherein, the molded package comprises: Molding compounds; a first power semiconductor die encapsulated by the mold compound; and a first temperature sensing cavity formed in a surface of the molding compound, wherein the molded package has no temperature sensing terminal, The size of the first temperature sensing cavity is set to accommodate the temperature sensor, and / or the combined area of ​​each side wall and the bottom of the first temperature sensing cavity is larger than the area of ​​the opening in the surface of the molding compound that defines the first temperature sensing cavity.

18. The power electronic system according to claim 17, wherein: The temperature sensor is an NTC (Negative Temperature Coefficient) sensor located in the first temperature sensing cavity.

19. The power electronic system according to claim 17, wherein: The temperature sensor is an infrared sensor aligned with the first temperature sensing cavity.

20. The power electronic system of claim 17, wherein: The molded package includes a plurality of power semiconductor dies encapsulated by the mold compound and a temperature sensing cavity formed in a surface of the mold compound proximate to each power semiconductor die, and wherein the temperature sensor is a portion of an infrared camera configured to detect black body radiation in an IR spectrum emitted by the molded package from each temperature sensing cavity.

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