Semiconductor laser

Abstract

The invention discloses a semiconductor laser, which relates to the technical field of lasers and comprises a carrier, a plurality of light-emitting groups, a beam combining unit and an optical fiber unit, the light-emitting sets are installed on the carrier and distributed in an array mode in the first horizontal linear direction. Each light-emitting group comprises a first light-emitting module and a second light-emitting module; the first light-emitting module and the second light-emitting module are distributed in the second horizontal linear direction perpendicular to the first horizontal linear direction and distributed up and down in the vertical direction. According to the design, the occupied space in the second horizontal linear direction is effectively shortened, all parts of the light-emitting module are arranged more tightly, the space utilization rate is higher, and then the size of the laser is effectively reduced. And meanwhile, the first light-emitting chip of the first light-emitting module and the second light-emitting chip of the second light-emitting module are oppositely arranged, so that rapid heat dissipation is facilitated.

Description

Technical Field

[0001] The present application relates to the field of laser technology, and in particular to a semiconductor laser. Background Art

[0002] Semiconductor lasers have the characteristics of small size, low power consumption, high electro-optical conversion efficiency and good reliability. They are widely used in industrial processing, optical display, medical cosmetology, optical communication, optical sensing and other fields. They can also be used as pump sources for fiber lasers and solid-state lasers.

[0003] Industrial processing and pump source and other application scenarios put forward high requirements on the optical power and external volume of semiconductor lasers. The demand for high power means an increase in the number of laser chip units, which poses a greater challenge to volume optimization. The traditional array distribution along the first straight line direction will cause the laser to occupy a large space in the first straight line direction, which seriously does not meet the high requirements for external volume optimization. Moreover, since the laser beam after collimation by the slow axis collimator still has a certain divergence angle (about 0.5°), this arrangement increases the distance between the laser chip unit far away from the beam combining device and the beam combining device, resulting in the deterioration of the spot quality of the beam emitted by it on the beam combining device, affecting the spot beam combining effect and fiber coupling efficiency. In order to solve the above problems, a method is currently proposed to divide the laser chip units into two rows and arrange them relatively along the second straight line direction perpendicular to the first straight line direction. Although this can shorten the space occupied by the laser in the first straight line direction, the space occupied in the second straight line direction is also significantly increased, resulting in low space utilization and increasing the overall volume of the laser. There is still some deficiency in the volume optimization effect. Summary of the invention

[0004] In view of this, the purpose of the present application is to provide a semiconductor laser that can improve space utilization, effectively reduce the size of the laser, and at the same time alleviate the problem of decreased coupling efficiency caused by the deterioration of the spot quality of the light after slow-axis collimation of the remote laser chip on the beam combining device, and achieve a better heat dissipation effect.

[0005] In order to achieve the above technical objectives, the present application provides a semiconductor laser, including a carrier, a plurality of light-emitting groups, a beam combining unit and an optical fiber unit;

[0006] A plurality of the light-emitting groups are mounted on the carrier and distributed in an array along a first horizontal straight line direction;

[0007] Each of the light-emitting groups includes a first light-emitting module and a second light-emitting module;

[0008] The first light emitting modules and the second light emitting modules are distributed along a second horizontal straight line direction perpendicular to the first horizontal straight line direction, and are distributed up and down in the vertical direction;

[0009] The first light-emitting module includes a first light-emitting chip, a first reflector and a first slow-axis collimator;

[0010] The first light emitting chip, the first slow axis collimator and the first reflector are arranged in sequence along the second horizontal straight line direction;

[0011] The second light-emitting module includes a second light-emitting chip, a second reflector and a second slow-axis collimator;

[0012] The second light emitting chip, the second slow axis collimator and the second reflector are arranged in sequence along the second horizontal straight line direction;

[0013] The first light-emitting chip and the second light-emitting chip are located opposite to each other and have opposite light emitting directions;

[0014] The beam combining unit and the optical fiber unit are installed on the carrier, and the beam combining unit is used to guide the light beams emitted from the first reflector and the second reflector to the optical fiber unit.

[0015] Furthermore, the second light-emitting module is distributed above the first light-emitting module;

[0016] The carrier is provided with a first support, a second support and a third support in sequence along the second horizontal straight line direction;

[0017] The first light emitting chip is arranged between the second support and the third support;

[0018] The first reflector is disposed between the first support and the second support;

[0019] The first slow axis collimator is arranged between the first support and the second support, or between the second support and the third support;

[0020] The second light emitting chip is arranged on the first support;

[0021] The second slow axis collimator is arranged on the second support;

[0022] The second reflector is arranged on the third support;

[0023] The second support is provided with a through hole for the light beam emitted by the first light emitting chip to pass through.

[0024] Furthermore, the first support, the second support and the third support are integrally formed with the carrier.

[0025] Furthermore, the first support, the second support and the third support are integrally connected to the bottom of the second light-emitting chip, the bottom of the second slow-axis collimator and the bottom of the second reflector respectively.

[0026] Furthermore, the height of the upper edge of the first reflector is smaller than the light-emitting height of the second light-emitting chip.

[0027] Furthermore, the first light-emitting chips of adjacent light-emitting groups are arranged at intervals;

[0028] The second light-emitting chips of adjacent light-emitting groups are arranged at intervals.

[0029] Further, the beam combining unit includes a coupler, a polarization beam combiner, a first light guide group and a second light guide group;

[0030] The optical fiber unit, the coupler, and the polarization beam combiner are sequentially distributed along the first horizontal straight line direction;

[0031] The first light guide group is used to guide the light beam emitted from the first reflector to the polarization beam combiner;

[0032] The second light guiding group is used to guide the light beam emitted from the second reflector to the polarization beam combiner.

[0033] Further, the optical fiber unit, the coupler and the polarization beam combiner are arranged on one side of the light-emitting group along the second horizontal straight line direction;

[0034] The first light guide group includes a third reflector and a fourth reflector;

[0035] The third reflector guides the light beam emitted from the first reflector to the fourth reflector;

[0036] The fourth reflector guides the light beam emitted from the third reflector to the polarization beam combiner;

[0037] The second light guide group includes a fifth reflector and a parallelogram prism;

[0038] The fifth reflector guides the light beam emitted from the second reflector to the parallelogram prism;

[0039] The parallelogram prism guides the light beam emitted from the fifth reflecting mirror to the polarization beam combiner.

[0040] It can be seen from the above technical solutions that the semiconductor laser designed in this application has the following beneficial effects:

[0041] 1. The first light-emitting module and the second light-emitting module of the light-emitting group are arranged along the second horizontal straight line direction, and are distributed vertically up and down. This design effectively shortens the space occupied in the second horizontal straight line direction, makes the arrangement of the various components of the light-emitting module more compact, and improves the space utilization rate, thereby effectively reducing the volume of the laser.

[0042] 2. The closer arrangement of the components of the light-emitting module also makes the space occupied in the first horizontal straight line direction smaller, and the distance between the light-emitting chip far away from the beam-combining unit and the beam-combining unit is smaller, which helps to alleviate the problem of decreased coupling efficiency caused by the deterioration of the light spot quality.

[0043] 3. The first light-emitting chip and the second light-emitting chip are arranged opposite to each other. Compared with the arrangement on the same side, the distribution position of the light-emitting chips on the carrier is more balanced, and the heat dissipated during operation is also more evenly distributed on the carrier, which can speed up the heat dissipation speed of the light-emitting chips and reduce the heat accumulation in the area where the light-emitting chips are located, thereby facilitating rapid heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0045] Figure 1 A three-dimensional diagram of a semiconductor laser provided in the present application;

[0046] Figure 2 A cross-sectional view of a semiconductor laser provided in the present application;

[0047] Figure 3 A top view of a semiconductor laser provided in this application;

[0048] Figure 4 This is a schematic diagram of heat distribution when the light source chips are arranged on the same side;

[0049] Figure 5 A schematic diagram of heat distribution of the light source chips designed in this application distributed on two opposite sides;

[0050] In the figure: 1. first light-emitting module; 11. first light-emitting chip; 12. first slow-axis collimator; 13. first reflector; 2. second light-emitting module; 21. second light-emitting chip; 22. second slow-axis collimator; 23. second reflector; 3. carrier; 31. first support; 32. second support; 33. third support; 4. optical fiber unit; 5. beam combining unit; 51. coupler; 52. polarization beam combiner; 53. first light guide group; 531. third reflector; 532. fourth reflector; 54. second light guide group; 541. fifth reflector; 542. parallelogram prism. DETAILED DESCRIPTION

[0051] The technical solutions of the embodiments of the present application will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, not all of them. All other embodiments obtained by ordinary technicians in this field without creative work based on the embodiments in the embodiments of the present application are within the scope of protection of the embodiments of the present application.

[0052] In the description of the embodiments of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the embodiments of the present application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0053] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a replaceable connection, or an integral connection, it can be a mechanical connection, it can be an electrical connection, it can be a direct connection, it can be indirectly connected through an intermediate medium, and it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present application can be understood according to specific circumstances.

[0054] The embodiment of the present application discloses a semiconductor laser.

[0055] See also Figure 1 , Figure 4 as well as Figure 5 , an embodiment of a semiconductor laser provided in the embodiments of the present application includes:

[0056] A carrier 3 , several light-emitting groups (one or more light-emitting groups), a beam combining unit 5 and an optical fiber unit 4 .

[0057] A plurality of light-emitting groups are mounted on the carrier 3 and are distributed in an array along a first horizontal straight line direction. The first horizontal straight line direction may be a horizontal direction or a length direction of the carrier 3 without limitation.

[0058] Each light-emitting group includes a first light-emitting module 1 and a second light-emitting module 2; the first light-emitting module 1 and the second light-emitting module 2 are distributed along a second horizontal straight line direction perpendicular to the first horizontal straight line direction, and are distributed up and down in the vertical direction. It should be noted that in actual design, the first light-emitting module 1 and the second light-emitting module 2 are the same light-emitting module, and in order to better illustrate the relative positions between the light-emitting modules, the present application distinguishes between the first light-emitting module 1 and the second light-emitting module 2. In addition, taking the first horizontal straight line direction as the horizontal direction or the length direction of the carrier 3 as an example, correspondingly, the second horizontal straight line direction is the longitudinal direction or the width direction of the carrier 3.

[0059] The first light-emitting module 1 includes a first light-emitting chip 11, a first reflector 13 and a first slow-axis collimator 12; the first light-emitting chip 11, the first slow-axis collimator 12 and the first reflector 13 are sequentially arranged along the second horizontal straight line direction. The second light-emitting module 2 includes a second light-emitting chip 21, a second reflector 23 and a second slow-axis collimator 22; the second light-emitting chip 21, the second slow-axis collimator 22 and the second reflector 23 are sequentially arranged along the second horizontal straight line direction.

[0060] During design, the placement and angle setting of the reflector should make each beam of reflected light have the same inclination angle, which can prevent the light beam from being blocked by other reflectors and ensure that the light spots formed by each beam of light in the beam combining unit 5 are arranged in sequence. Furthermore, in terms of distribution, the arrangement direction (first horizontal straight line direction) of the first light emitting chip 11 / the second light emitting chip 21 is perpendicular to its own light emitting direction (second horizontal straight line direction). The slow axis collimator and the reflector perform slow axis collimation on the light beam emitted by the light emitting chip and reflect it into the beam combining unit 5.

[0061] The first light-emitting chip 11 and the second light-emitting chip 21 are positioned opposite to each other, and their light emitting directions are opposite; the beam combining unit 5 and the optical fiber unit 4 are installed on the carrier 3, and the beam combining unit 5 is used to guide the light beams emitted from the first reflector 13 and the second reflector 23 to the optical fiber unit 4.

[0062] The semiconductor laser designed in this application has the following beneficial effects:

[0063] 1. In the second horizontal straight line direction, since the two light-emitting modules are arranged in order along this direction and spatially integrated through a reasonable layout in the vertical direction, the situation that may have been scattered and occupied a large space has been greatly improved, effectively shortening the space occupancy in this direction. This allows the distance between the various components of the light-emitting module to be shortened, and they can be arranged more closely together, thereby achieving higher space utilization. The improvement in space utilization has further produced a chain reaction, the most intuitive of which is that it can effectively reduce the volume of the entire laser, making it more compact and compact while meeting performance requirements.

[0064] 2. The arrangement of the components of the light-emitting module has become more compact. This change has also played a positive role in the first horizontal straight line direction. As the spacing between the components decreases, the space occupied in the first horizontal straight line direction naturally becomes smaller. Among them, the distance between the light-emitting chip far away from the beam combining unit 5 and the beam combining unit 5 also decreases accordingly, and the reduction of this distance is of great significance. It helps to alleviate the problem of decreased coupling efficiency caused by the deterioration of the light spot quality, thereby ensuring that the laser can operate in a more stable and efficient state, improving the overall working efficiency and output quality, and better meeting the strict requirements of various application scenarios for laser performance.

[0065] 3. The first light-emitting chip 11 and the second light-emitting chip 21 are arranged opposite to each other. Compared with the same-side arrangement, the distribution position of the light-emitting chips on the carrier 3 is more evenly distributed, and the heat generated during operation is also more evenly distributed on the carrier 3, which can speed up the heat dissipation speed of the light-emitting chips and reduce the heat accumulation in the area where the light-emitting chips are located, thereby facilitating rapid heat dissipation.

[0066] In the in-depth study of the heat dissipation performance of the laser, a series of rigorous and targeted simulation experiments were carried out with the help of advanced simulation software. From the simulation results, under the same specific water cooling conditions, when the light-emitting chip adopts the design scheme located on the same side, the highest temperature presented is accurately measured to be about 108℃ ( Figure 4 In That is to say , That is to say ), this data can be clearly seen from Figure 4 Obtained intuitively.

[0067] In sharp contrast, the innovative light-emitting chips used in this application are located on opposite sides. Under the same water cooling conditions and parameters, the maximum temperature is only about 100°C ( Figure 5 In That is to say , That is to say ), the relevant data are shown in Figure 5 Through rigorous comparative calculations, it can be found that the highest temperature of the same-side design is 8% higher than that of the present application. This data is not a simple numerical difference, but contains profound design significance and the embodiment of the difference in heat dissipation performance.

[0068] In the heat dissipation mechanism of the laser, the temperature directly affects multiple key performance indicators such as the stability, working efficiency and service life of the equipment. The design of the light-emitting chips on both sides of the present application can achieve a lower maximum temperature under the same heat dissipation conditions, which fully demonstrates that the scheme has obvious advantages in terms of heat distribution and conduction path optimization. Lower temperatures mean that the components inside the device are subjected to less thermal stress, can operate more stably, and reduce performance fluctuations and potential failure risks caused by high temperatures.

[0069] In addition, it is worth emphasizing that in the field of engineering technology, the 8% heat dissipation optimization effect is quite significant and cannot be ignored. For precision equipment such as lasers that have extremely high heat dissipation requirements, this optimization range can greatly improve the overall performance of the equipment, providing a solid and reliable guarantee for its continuous and efficient operation in a complex and changing working environment, and also providing a valuable reference basis and direction for subsequent related laser design and optimization work.

[0070] The carrier 3 proposed in the present application may be in the form of a shell + a shell cover, and the design may be changed according to actual needs without limitation.

[0071] The above is a first embodiment of a semiconductor laser provided in the embodiment of the present application. The following is a second embodiment of a semiconductor laser provided in the embodiment of the present application. For details, please refer to Figures 1 to 3 .

[0072] Based on the solution of the above embodiment 1:

[0073] Furthermore, if Figure 2 As shown, taking the second light emitting module 2 distributed above the first light emitting module 1 as an example, specifically, a first support 31 , a second support 32 and a third support 33 may be sequentially provided on the carrier 3 along the second horizontal straight line direction.

[0074] The first light emitting chip 11 is arranged between the second support 32 and the third support 33 , the first reflector 13 is arranged between the first support 31 and the second support 32 ; the first slow axis collimator 12 is arranged between the first support 31 and the second support 32 , or between the second support 32 and the third support 33 .

[0075] The second light emitting chip 21 is disposed on the first support 31 , the second slow axis collimator 22 is disposed on the second support 32 , the second reflector 23 is disposed on the third support 33 , and the second support 32 is provided with a through hole for the light beam emitted by the first light emitting chip 11 to pass through.

[0076] Furthermore, the first support 31 , the second support 32 and the third support 33 may be integrally formed with the carrier 3 , that is, a corresponding support structure is directly designed on the carrier 3 to achieve a height difference distribution between the first light-emitting module 1 and the second light-emitting module 2 .

[0077] Furthermore, of course, the first support 31, the second support 32 and the third support 33 can also be integrally connected to the bottom of the second light-emitting chip 21, the bottom of the second slow-axis collimator 22 and the bottom of the second reflector 23. That is, the second light-emitting chip 21, the second slow-axis collimator 22 and the second reflector 23 are modified so that their bottoms have corresponding support structures, so as to realize the height difference distribution between the first light-emitting module 1 and the second light-emitting module 2.

[0078] Compared with the method of fixing the support structure to the bottom of components such as the light-emitting chip, the present application prefers the method of integrally forming the support structure on the carrier 3, which is more convenient to process and avoids modifying the light-emitting module, thereby reducing costs.

[0079] Furthermore, the first support 31, the second support 32 and the third support 33 are respectively designed to be connected to the carrier 3 through an adjustment component so as to be adjustable in height relative to the carrier 3. The adjustment component may include a bolt and a guide rod, and a lug portion is provided on one side of each support, and the bolt and the guide rod movably pass through the lug portion, and the bolt can rotate with the lug thread, and one end of the bolt passing through the lug portion is rotatably connected to the carrier 3 but does not move in its own axial direction. Therefore, by rotating the bolt, the lifting movement of the support is adjusted, thereby achieving height adjustment. The height adjustable design can meet more height difference requirements and has better applicability. In addition, it should be noted that when the height is designed to be adjustable, the through hole is designed as a waist-shaped through hole, so that it can adapt to the passage of light beams under more height differences.

[0080] Furthermore, the height of the upper edge of the first reflector 13 is smaller than the light-emitting height of the second light-emitting chip 21 , so as to avoid blocking the light emitted by the second light-emitting chip 21 .

[0081] Furthermore, the first light-emitting chips 11 of adjacent light-emitting groups are spaced apart, and the second light-emitting chips 21 of adjacent light-emitting groups are spaced apart. The spacing distance can be designed according to actual needs, for example, the distance design is relatively small to further reduce the space occupied in the first horizontal straight line direction and further reduce the length of the laser in this direction.

[0082] Furthermore, the beam combining unit 5 includes a coupler 51 , a polarization beam combiner 52 , a first light guiding group 53 and a second light guiding group 54 .

[0083] The optical fiber unit 4, the coupler 51 and the polarization beam combiner 52 are sequentially distributed along the first horizontal straight line direction.

[0084] The first light guide group 53 is used to guide the light beam emitted from the first reflector 13 to the polarization beam combiner 52; the second light guide group 54 is used to guide the light beam emitted from the second reflector 23 to the polarization beam combiner 52 and make the light beam guided by itself enter the polarization beam combiner 52 in a perpendicular state to the light beam guided by the first light guide group 53.

[0085] Furthermore, the optical fiber unit 4, the coupler 51 and the polarization combiner 52 are arranged on one side of the light-emitting group along the second horizontal straight line direction.

[0086] Since the light beams finally outputted by the first light emitting module 1 and the second light emitting module 2 have a height difference, in order to integrate the light beams with the height difference, the first light guide assembly 53 and one of the second light components has a height difference integration component for integrating the light beams to the same height.

[0087] Specifically, taking the second light guide group 54 designed with a height difference integration component as an example:

[0088] The first light guide group 53 may include a third reflector 531 and a fourth reflector 532; the third reflector 531 guides the light beam emitted from the first reflector 13 to the fourth reflector 532; the fourth reflector 532 guides the light beam emitted from the third reflector 531 to the polarization beam combiner 52; the fourth reflector 532 is arranged on the side of the polarization beam combiner 52 away from the coupler 51 along the first horizontal straight line direction, and the third reflector 531 is distributed along the same first horizontal straight line direction with each first reflector 13; the fourth reflector 532 and the third reflector 531 are distributed in sequence along the second horizontal straight line direction.

[0089] The second light guide assembly 54 includes a fifth reflector 541 and a parallelogram prism 542 , wherein the parallelogram prism 542 is used as a height difference integrator. The parallelogram prism 542 can cause lateral displacement of light after incident on the prism surface, but does not change the propagation direction.

[0090] The fifth reflector 541 guides the light beam emitted from the second reflector 23 to the parallelogram prism 542; the parallelogram prism 542 guides the light beam emitted from the fifth reflector 541 to the polarization beam combiner 52. The polarization beam combiner 52, the parallelogram and the fifth reflector 541 are sequentially arranged along the second horizontal straight line direction, and the fifth reflector 541 and each second reflector 23 are distributed along the same first horizontal straight line direction.

[0091] In this embodiment, the parallelogram prism 542 is applied to the second light-emitting module 2 of a higher height, and the height of the light beam after passing through the parallelogram can be reduced by adjusting the position and placement of the parallelogram prism 542. Of course, when applied to the first light-emitting module 1 of a lower height, the parallelogram prism 542 and the fifth reflector 541 are correspondingly arranged behind the first reflector 13, and the height of the light beam after passing through the parallelogram can be increased by adjusting the position and placement of the parallelogram prism 542.

[0092] Of course, in addition to the above-mentioned method of adding the parallelogram prism 542, it can also be achieved by relying solely on a reflector (only the third reflector 531, the fourth reflector 532 and the fifth reflector 541). It only needs to satisfy that the angle of the reflector relative to the carrier 3 is adjustable. By adjusting the position of the reflector and the angle relative to the carrier 3, the two beams of light can be adjusted to the same height, and the propagation directions are vertical.

[0093] The light beam after passing through the polarization beam combiner 52 enters the optical fiber unit 4 through the coupler 51 (optical fiber coupler 51 ).

[0094] The above is a detailed introduction to a semiconductor laser provided in the present application. For a person skilled in the art, according to the concept of the embodiments of the present application, there may be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A semiconductor laser, characterized in that: It comprises a carrier (3), a plurality of light-emitting groups, a beam combining unit (5) and an optical fiber unit (4); A plurality of the light-emitting groups are mounted on the carrier (3) and are distributed in an array along a first horizontal straight line direction; Each of the light-emitting groups comprises a first light-emitting module (1) and a second light-emitting module (2); The first light-emitting module (1) and the second light-emitting module (2) are distributed along a second horizontal straight line direction perpendicular to the first horizontal straight line direction, and are distributed up and down in the vertical direction; The first light-emitting module (1) comprises a first light-emitting chip (11), a first reflector (13) and a first slow-axis collimator (12); The first light-emitting chip (11), the first slow-axis collimating mirror (12), and the first reflecting mirror (13) are arranged in sequence along the second horizontal straight line direction; The second light-emitting module (2) comprises a second light-emitting chip (21), a second reflector (23) and a second slow-axis collimator (22); The second light-emitting chip (21), the second slow-axis collimating mirror (22), and the second reflecting mirror (23) are arranged in sequence along the second horizontal straight line direction; The first light-emitting chip (11) and the second light-emitting chip (21) are located opposite to each other and have opposite light emitting directions; The beam combining unit (5) and the optical fiber unit (4) are mounted on the carrier (3), and the beam combining unit (5) is used to guide the light beams emitted from the first reflector (13) and the second reflector (23) to the optical fiber unit (4).

2. A semiconductor laser according to claim 1, characterized in that: The second light-emitting module (2) is distributed above the first light-emitting module (1); A first support (31), a second support (32) and a third support (33) are sequentially arranged on the carrier (3) along the second horizontal straight line direction; The first light-emitting chip (11) is arranged between the second support (32) and the third support (33); The first reflector (13) is arranged between the first support (31) and the second support (32); The first slow-axis collimating mirror (12) is arranged between the first support (31) and the second support (32), or between the second support (32) and the third support (33); The second light-emitting chip (21) is arranged on the first support (31); The second slow-axis collimating mirror (22) is arranged on the second support (32); The second reflector (23) is arranged on the third support (33); The second support (32) is provided with a through hole for the light beam emitted by the first light-emitting chip (11) to pass through.

3. A semiconductor laser according to claim 2, characterized in that: The first support (31), the second support (32) and the third support (33) are integrally formed with the carrier (3).

4. A semiconductor laser according to claim 2, characterized in that: The first support (31), the second support (32) and the third support (33) are respectively integrally connected to the bottom of the second light-emitting chip (21), the bottom of the second slow-axis collimator (22) and the bottom of the second reflector (23).

5. A semiconductor laser according to claim 2, characterized in that: The height of the upper edge of the first reflector (13) is smaller than the light-emitting height of the second light-emitting chip (21).

6. A semiconductor laser according to claim 1, characterized in that: The first light-emitting chips (11) of adjacent light-emitting groups are arranged at intervals; The second light-emitting chips (21) of adjacent light-emitting groups are arranged at intervals.

7. A semiconductor laser according to claim 2, characterized in that: The beam combining unit (5) comprises a coupler (51), a polarization beam combiner (52), a first light guiding group (53) and a second light guiding group (54); The optical fiber unit (4), the coupler (51), and the polarization beam combiner (52) are distributed in sequence along the first horizontal straight line direction; The first light guide group (53) is used to guide the light beam emitted from the first reflector (13) to the polarization beam combiner (52); The second light guide group (54) is used to guide the light beam emitted from the second reflector (23) to the polarization beam combiner (52).

8. A semiconductor laser according to claim 7, characterized in that: The optical fiber unit (4), the coupler (51) and the polarization beam combiner (52) are arranged on one side of the light-emitting group along the second horizontal straight line direction; The first light guide group (53) comprises a third reflector (531) and a fourth reflector (532); The third reflector (531) guides the light beam emitted from the first reflector (13) to the fourth reflector (532); The fourth reflector (532) guides the light beam emitted from the third reflector (531) to the polarization beam combiner (52); The second light guide group (54) comprises a fifth reflector (541) and a parallelogram prism (542); The fifth reflector (541) guides the light beam emitted from the second reflector (23) to the parallelogram prism (542); The parallelogram prism (542) guides the light beam emitted from the fifth reflector (541) to the polarization beam combiner (52).

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