A method for improving panel penetration by improving interface processing

Abstract

The present invention discloses a method for improving the panel penetration rate by improving the interface treatment, which relates to the technical field of TFT substrate production. The method is applied to the substrate film layer treatment process before BC film formation, and the substrate is OC photoresist, comprising: step 1, placing the substrate in the etching chamber through a conveying mechanism, introducing Ar gas to fill the chamber with argon gas, and after the chamber pressure is stable, outputting 3500W to ionize the Ar gas to dissociate Ar + Step 2: Extraction electrode: By increasing the voltage around the extraction electrode to 3000V, Ar + Extracted; Step 3, extracted Ar + Then, the voltage of the suppression electrode is increased to 6000V to focus and accelerate the ion beam to etch the substrate surface; Step 4, by controlling the track moving speed to 12m / s and the moving acceleration to 1m / s 2 , moving cycle 1 / time drives the substrate to evenly receive surface bombardment. The present invention provides a method for improving panel penetration by improving interface treatment, which can effectively remove organic matter and oxides to improve film adhesion and thus improve penetration.

Description

Technical Field

[0001] The present invention relates to the technical field of TFT substrate production, and in particular to a method for improving panel penetration by improving interface processing. Background Art

[0002] As consumer electronic display products continue to upgrade, high-penetration TFT panels can provide brighter, clearer, and more colorful display effects to meet consumers' demand for high-quality visual experience. In the market competition, reducing costs is also a focus of enterprises. Improving the penetration of TFT panels can reduce the cost of backlight modules because lower-power backlight sources can be used or the number of backlight components can be reduced. At the same time, by optimizing the panel structure and manufacturing process, material costs and production costs can also be reduced. Therefore, improving the penetration rate is of great significance for enterprises to reduce costs and improve product competitiveness.

[0003] The transmittance of a-Si TFT technology LCDs is improved mainly by optimizing film structure and materials / improving liquid crystal material performance / improving panel design and process / increasing pixel aperture ratio / increasing polarizer transmittance / optimizing color filter performance. Currently, the transparent film structure of 8 / 9Mask products includes GI (SiNx), PV (SiNx), OC (photoresist), BC (ITO), CH (SiNx), PE (ITO) 6 layers (such as Figure 1 As shown in FIG. 1 , the transmittance of the transparent film structure of the 8 / 9 Mask product is much lower than that of the 7 Mask product (transparent film GI, BC, CH, PE 5 layers). Therefore, it is urgent to provide a method for improving the transmittance of the transparent film structure of the 8 / 9 Mask product. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a method for improving the panel transmittance by improving the interface treatment, thereby improving the transmittance of the transparent film structure of the 8 / 9 Mask product.

[0005] In order to solve the above technical problems, the present invention provides a method for improving the panel transmittance by improving the interface treatment, which is applied to the substrate film layer treatment process before BC film formation, and the substrate is OC photoresist, and the method comprises:

[0006] Step 1: Place the substrate in the etching chamber through the conveying mechanism, introduce Ar gas to fill the chamber with argon gas, and after the chamber pressure stabilizes, output 3000W-3500W to ionize the Ar gas to dissociate Ar + ;

[0007] Step 2: Extraction electrode: By increasing the voltage around the extraction electrode to 2500V-3000V, Ar + Extract it;

[0008] Step 3: Extracted Ar + Then, the voltage is increased by 5000V-6000V through the suppression electrode to focus and accelerate the formation of an ion beam to etch the substrate surface;

[0009] Step 4: Control the track moving speed to 12m / s and the moving acceleration to 1m / s 2 , moving cycle1 / time drives the substrate to evenly receive surface bombardment.

[0010] Further, the method further comprises step 5, wherein the Ar is neutralized by releasing neutralization electrons through PFG. + ions to prevent the circuits on the substrate from being damaged by static electricity.

[0011] Preferably, in step 1, the RF Power output is 3500W to ionize the Ar gas.

[0012] Preferably, in step 2, the voltage value added around the extraction electrode is 3000V.

[0013] Preferably, in step 3, the voltage value increased by the inhibitory electrode is 6000V.

[0014] Preferably, in step 1, 50 Sccm of Ar gas is introduced.

[0015] Preferably, the model of the OC photoresist is PC552-SL5H, and the viscosity is 7.6CP.

[0016] The present invention has the following advantages:

[0017] By increasing the RF power output, increasing the electrode voltage, and controlling the track movement speed and movement cycle, the substrate only needs to receive one bombardment treatment to effectively remove organic matter and oxides. On the basis of improving the adhesion of the film, the processing time is reduced, the formation of cracks or pits on the surface is avoided, and the film layer is less damaged. The single film penetration average is increased from 86.83% to 90.40%, and the substrate penetration average is increased from 84.5% to 87.90%. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The present invention will be further described below in conjunction with embodiments with reference to the accompanying drawings.

[0019] Figure 1 This is a schematic diagram of the film layer of the 8 / 9Mask product;

[0020] Figure 2 Schematic diagram of the TestKeyPad area exception: CH&PV separation

[0021] Figure 3 Ar + Schematic diagram of ion surface treatment;

[0022] Figure 4 Ar + Etching rate results of SiNx film layer after ion surface treatment;

[0023] Figure 5 Ar + The etching rate results of OC photoresist film layer after ion surface treatment;

[0024] Figure 6 This is a flowchart of the method execution of the embodiment of the present invention;

[0025] Figure 7 To check the Ar using a transmittance tester + Single membrane penetration curve after ion surface treatment;

[0026] Figure 8 The Ar optimized in this example was confirmed by using a transmittance tester. + Single membrane penetration curve after ion surface treatment;

[0027] Fig. 9 To check the Ar using a transmittance tester + Substrate penetration curve after ion surface treatment;

[0028] Fig.10 The Ar optimized in this example was confirmed by using a transmittance tester. + Substrate penetration curve after ion surface treatment;

[0029] Fig.11 For conventional Ar + After ion surface treatment, the abnormal floating condition of the membrane is checked by automatic optical detection;

[0030] Fig.12 Ar optimized for this embodiment + After ion surface treatment, the membrane is inspected for abnormal floating conditions by automatic optical detection. DETAILED DESCRIPTION

[0031] The embodiment of the present invention provides a method for improving the panel penetration rate by improving the interface treatment, and dissociates into Ar + The ions are then accelerated to bombard the substrate surface through higher electric field energization and magnetic field acceleration, which can effectively remove organic matter and oxides and improve the adhesion of the film, thereby improving the penetration rate.

[0032] The technical solution in the embodiment of the present invention has the following general idea:

[0033] In the actual production process, there is a time difference between the substrate completing the previous process and the next process. The substrate will be affected by the residual deposition of trace organic matter in the storage environment or the surface oxidation caused by metal exposure, which will cause the adhesion of the subsequent process film to deteriorate, and the film layer separation in local areas is prone to occur (such as Figure 2 As shown in the figure), which results in defective products. In the prior art, the BC (ITO) film is usually added before forming the film. Figure 3 The Ar + Ion surface treatment (Ar Treatment) is used to etch the surface oxide layer and organic matter. The etching chamber is in a high vacuum environment, and the Ar gas is dissociated into Ar through the extraction electrode. + Ion clusters, and then high pressure extraction of Ar + The ion beam is accelerated by an electric field to bombard the surface of the product for surface treatment, thereby improving the cleanliness of the panel and enhancing the adhesion between film layers by rough plating to improve product defects caused by film separation.

[0034] The inventors found that the SiNx film layer and the / OC photoresist film layer were subjected to Ar + There is a significant difference in the etching rate after ion ion surface treatment - the etching rate of SiNx film is 0.4%, such as Figure 4 As shown; the etching rate of the OC photoresist film layer is 2.2%. Figure 5 The inventors have concluded that the reason for this difference is that the density of the SiNx film is different from that of the OC photoresist film. + Ion bombardment can damage the surface of the underlying film, causing tiny pits and cracks. Therefore, when the substrate is an OC film layer, the surface damage will be aggravated, causing light to be scattered and absorbed when passing through, thereby reducing the penetration rate. Therefore, it is considered to optimize the Ar + The ion surface treatment process improves the transmittance of the substrate whose substrate is the OC film layer.

[0035] In the prior art, Ar + Ion surface treatment equipment requires the substrate to be repeatedly bombarded to effectively remove organic matter and oxides. The inventor innovatively thought of dissociating Ar gas into Ar by using an ultra-high power radio frequency power supply. + The ions are then accelerated to bombard the substrate surface through higher electric field energization and magnetic field, so that after a one-time bombardment, the penetration rate can be improved on the basis of effectively removing organic matter and oxides and improving the adhesion of the film.

[0036] This embodiment provides a method for improving the panel transmittance by improving the interface treatment, which is applied to the substrate film layer treatment process before BC film formation, and the substrate is OC photoresist, such as Figure 6 As shown, the method includes:

[0037] S1. Place the substrate in the etching chamber through the conveying mechanism, introduce Ar gas to fill the chamber with argon gas, and after the chamber pressure stabilizes, the RF power supply outputs 3500W (can be adjusted within the range of 3000W-3500W as needed) to ionize the Ar gas and dissociate Ar + ;

[0038] S2, extraction electrode by increasing the voltage around the extraction electrode 3000V (can be adjusted within the range of 2500V-3000V as needed), Ar + Extract it;

[0039] S3, extracted Ar + Then, the voltage is increased to 6000V (it can be adjusted within the range of 5000V-6000V as needed) through the suppression electrode to focus and accelerate the formation of an ion beam to etch the substrate surface;

[0040] S4, by controlling the track moving speed 12m / s, moving acceleration 1m / s 2 , moving cycle 1 / time drives the substrate to evenly receive surface bombardment.

[0041] S5, neutralizes Ar by releasing neutralizing electrons through PFG + ions, preventing the circuits on the substrate from being damaged by static electricity and affecting product quality.

[0042] By increasing the RF power output, increasing the electrode voltage, and controlling the track movement speed and movement cycle, the substrate only needs to be bombarded once to effectively remove organic matter and oxides. Without affecting product quality, the processing time is reduced, cracks or pits on the surface are avoided, and the film layer is less damaged, thereby improving the penetration rate.

[0043] This embodiment uses a substrate product with a model of PC552-SL5H and a viscosity of 7.6CP OC photoresist as the substrate for testing. The substrate is an 8 / 9Mask product with a film structure of GI, PV, OC, BC, CH, and PE 6 layers of organic photoresist substrate. + Compared with the ion surface treatment, the single film transmittance and product transmittance at three points at different wavelengths were confirmed using a transmittance inspection machine. The results are as follows Figures 7 to 10 It can be seen that the method of this embodiment increases the average single film penetration from 86.83% to 90.40%, indicating that the surface optimization conditions are significantly improved compared with the normal conditions (increased by 3.57%); and increases the average substrate penetration from 84.5% to 87.90%, confirming that it is consistent with the control chip simulation performance and is positively improved (increased by 3.4%).

[0044] Simultaneous inspection of two Ar +Abnormal membrane floating after ion surface treatment, conventional Ar + Ion surface treatment and the Ar + After ion surface treatment, the surface is normal, without membrane floating / peeling phenomenon, such as Fig.11 and Fig.12 As shown, it is shown that the surface etching cleaning degree of the optimized method meets the product usage requirements.

[0045] The present invention improves the output of radio frequency power supply, increases the electrode voltage, and controls the track movement speed and movement cycle at the same time, so that the substrate only needs to receive one bombardment treatment to effectively remove organic matter and oxides. On the basis of improving the adhesion of the film, the processing time is reduced, the formation of cracks or pits on the surface is avoided, the film layer is less damaged, and the penetration rate is improved.

[0046] Although the specific implementation modes of the present invention are described above, those skilled in the art should understand that the specific implementation modes described are only illustrative and are not intended to limit the scope of the present invention. Equivalent modifications and changes made by those skilled in the art in accordance with the spirit of the present invention should be included in the scope of protection of the claims of the present invention.

Claims

1. A method for improving panel penetration by improving interface treatment, characterized in that: Applied to the substrate film layer processing process before BC film formation, and the substrate is OC photoresist, the method includes: Step 1: Place the substrate in the etching chamber through the conveying mechanism, introduce Ar gas to fill the chamber with argon gas, and after the chamber pressure stabilizes, output 3000W-3500W to ionize the Ar gas to dissociate Ar + ; Step 2: Extraction electrode: By increasing the voltage around the extraction electrode to 2500V-3000V, Ar + Extract it; Step 3: Extracted Ar + Then, the voltage is increased by 5000V-6000V through the suppression electrode to focus and accelerate the formation of an ion beam to etch the substrate surface; Step 4: Control the track moving speed to 12m / s and the moving acceleration to 1m / s 2 , moving cycle1 / time drives the substrate to evenly receive surface bombardment.

2. The method according to claim 1, characterized in that: The step 5 includes neutralizing Ar by releasing neutralizing electrons through PFG. + ions to prevent the circuits on the substrate from being damaged by static electricity.

3. The method according to claim 1, characterized in that: In the step 1, the RF Power output is 3500W to ionize the Ar gas.

4. The method according to claim 1, characterized in that: In step 2, the voltage value added around the extraction electrode is 3000V.

5. The method according to claim 1, characterized in that: In step 3, the voltage value increased by the suppression electrode is 6000V.

6. The method according to claim 1, characterized in that: In the step 1, 50 sccm of Ar gas is introduced.

7. The method according to claim 1, characterized in that: The model of the OC photoresist is PC552-SL5H, and the viscosity is 7.6CP.

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