A MiniLED chip for direct display screen pixels
By adopting separate growth substrate and light-transmissive substrate structure in the Min i LED chip, the problem of sapphire substrate being too thin and easy to break is solved, the yield and reliability of the product are improved, and the risk of substrate damage in production is reduced.
Patent Information
- Application Number
- CN202411963164.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-30
- Publication Date
- 2025-04-08
AI Technical Summary
The sapphire substrate of existing Min i LED chips is prone to damage if it is too thin, affecting the yield and reliability of the product.
Using a substrate structure including a growth substrate and a light-transmissive substrate, the growth substrate is used for the growth of a semiconductor multilayer structure, while the light-transmissive substrate is used for light transmission. Through this structural separation design, the thickness of the growth substrate does not affect the light-emission efficiency, and the substrate damage probability is reduced by thinning the light-transmissive substrate.
It effectively solves the problem that the substrate is too thin and easily damaged, improves the product yield and reliability, and reduces the risk of substrate damage in the production process.
Smart Images
Figure CN119789652A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to a Mini LED chip for pixels of a direct display screen. Background Art
[0002] Mini LED is a new generation of display technology, which has the characteristics of energy saving, local dimming, high color saturation, etc. It can be applied to backlight, display and other fields, and has broad market prospects. The size of Mini LED is generally about 100*100μm. The current mainstream research and development route is based on the flip chip of sapphire substrate. When the chip size is 100μm or even smaller, the thickness of the chip will be too thick, resulting in serious side light, which affects the light output efficiency. Although this problem can be solved by thinning the sapphire substrate, the sapphire substrate is too thin and easy to break, which reduces the yield and reliability of the product and affects the production efficiency.
[0003] Therefore, it is necessary to provide a new Mini LED chip for direct display screen pixels. Summary of the invention
[0004] Based on the above problems existing in the prior art, an object of an embodiment of the present invention is to provide a Mini LED chip for direct display screen pixels, which can solve the problem that the existing substrate is too thin and easy to be damaged.
[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: a MiniLED chip for direct display screen pixels, comprising a substrate, a semiconductor multilayer structure and a reflective metal layer 1, wherein the substrate comprises a growth substrate and a light-transmitting substrate, the growth substrate is perpendicular to the light-transmitting substrate, and the growth substrate is located in the middle position of the light-transmitting substrate, the semiconductor multilayer structure is arranged on the surface of the growth substrate, the reflective metal layer 1 is arranged on the side of the semiconductor multilayer structure away from the growth substrate, a reflective wall 1 is arranged on the reflective metal layer 1, and the reflective wall 1 is inclined to form an acute angle with the light-transmitting substrate, when a voltage is applied to the semiconductor multilayer structure to emit light of a specific wavelength, part of the light will be irradiated onto the reflective wall 1, and the light will be projected toward the light-transmitting substrate after being reflected by the reflective wall 1, thereby causing the light to be directed toward the front of the light-transmitting substrate.
[0006] Furthermore, the semiconductor multilayer structure includes an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer stacked in sequence, and the N-type semiconductor layer is stacked on the surface of the growth substrate.
[0007] Furthermore, two semiconductor multilayer structures are provided, which are symmetrically arranged on two opposite surfaces of the growth substrate, and two reflective metal layers 1 are correspondingly provided, which are respectively arranged on the side of the two semiconductor multilayer structures away from the growth substrate.
[0008] Furthermore, the Mini LED chip used for direct display screen pixels also includes a second reflective metal layer, which is arranged between the semiconductor multilayer structure and the growth substrate, and the second reflective metal layer is used to reflect light onto a reflective wall of the first reflective metal layer.
[0009] Furthermore, a second reflective wall is disposed on the second reflective metal layer, and an angle formed between the second reflective wall and the first reflective wall toward the light-transmitting substrate is an acute angle.
[0010] Furthermore, the two semiconductor multilayer structures in the chip can emit light of different wavelengths.
[0011] Furthermore, the semiconductor multilayer structure is inclined relative to the light-transmitting substrate, and an acute angle is formed between a surface of the semiconductor multilayer structure facing the reflective metal layer and the light-transmitting substrate.
[0012] Furthermore, a light-transmitting layer is provided between the semiconductor multilayer structure and the first reflective metal layer.
[0013] Furthermore, the Mini LED chip for direct display screen pixels also includes an N-type electrode and a P-type electrode, the N-type electrode is electrically connected to the N-type semiconductor layer, and the N-type electrode is arranged on the side of the N-type semiconductor layer away from the light-transmitting substrate, and the P-type electrode is electrically connected to the P-type semiconductor layer, and the P-type electrode is arranged on the side of the P-type semiconductor layer away from the light-transmitting substrate.
[0014] Furthermore, the reflective metal layer 2 is connected to the N-type semiconductor layer, and the reflective metal layer 2 is connected to the N-type electrode. In addition, the reflective metal layer 1 is connected to the P-type semiconductor layer, and the reflective metal layer 1 is connected to the P-type electrode.
[0015] Compared with the prior art, the above technical solution in the embodiment of the present invention has at least one of the following beneficial effects:
[0016] The present invention provides a Mini LED chip for direct display screen pixels, which includes a substrate, a semiconductor multilayer structure and a reflective metal layer. The substrate includes a growth substrate and a light-transmitting substrate. The growth substrate is perpendicular to the light-transmitting substrate, and the growth substrate is located in the middle of the light-transmitting substrate. The semiconductor multilayer structure is arranged on the surface of the growth substrate. The reflective metal layer is arranged on the side of the semiconductor multilayer structure away from the growth substrate. A reflective wall is arranged on the reflective metal layer, and the reflective wall is inclined to form an acute angle with the light-transmitting substrate. In this way, when a voltage is applied to the semiconductor multilayer structure to emit light of a specific wavelength, part of the light will irradiate the reflective wall, and the light will be projected toward the light-transmitting substrate after being reflected by the reflective wall, so that the light is directed to the front of the light-transmitting substrate to complete the light emission of the LED chip. The Mini LED chip for direct display screen pixels provided by an embodiment of the present invention The niLED chip separates the substrate into a growth substrate and a light-transmitting substrate. Since the growth substrate is only used for the growth and formation of the semiconductor multilayer structure and is not used for the transmission of light, the thickness of the growth substrate will not affect the light output efficiency. The thickness of the growth substrate does not need to be thinned and is therefore not easily damaged. Only the light-transmitting substrate needs to be thinned in the final process, which effectively reduces the chance of substrate breakage during the chip production process. The substrate is composed of a growth substrate and a light-transmitting substrate that are vertically arranged. The growth substrate reinforces the light-transmitting substrate to a certain extent, making the light-transmitting substrate not easily damaged, which effectively solves the problem of the existing substrate being too thin and easy to be damaged. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0018] Figure 1 A schematic diagram of the three-dimensional structure of a MiniLED chip for direct display screen pixels provided in an embodiment of the present invention.
[0019] Figure 2 A cross-sectional view of a MiniLED chip for a direct display screen pixel provided by an embodiment of the present invention Figure 1 .
[0020] Figure 3 A cross-sectional view of a MiniLED chip for a direct display screen pixel provided by an embodiment of the present invention Figure 2 .
[0021] Among them, the figure marks in the figure are: 10, substrate; 11, growth substrate; 12, light-transmitting substrate; 20, semiconductor multilayer structure; 21, N-type semiconductor layer; 22, multi-quantum well layer; 23, P-type semiconductor layer; 30, light-transmitting layer; 41, reflective metal layer one; 411, reflective wall one; 42, reflective metal layer two; 421, reflective wall two; 51, N-type electrode; 52, P-type electrode. DETAILED DESCRIPTION
[0022] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.
[0023] It should be noted that when an element is referred to as being "connected to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
[0024] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0025] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0026] Reference throughout the specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, when the phrases "in one embodiment," "in some embodiments," or "in some of these embodiments" appear in various places throughout the specification, not all references are to the same embodiment. Furthermore, in one or more embodiments, the particular features, structures, or characteristics may be combined in any suitable manner.
[0027] Please refer to Figures 1 to 3 As shown, a MiniLED chip for direct display screen pixels provided by the present invention is now described, and Figure 3A simple light path is shown by a dotted line in the figure. The MiniLED chip for direct display screen pixels includes a substrate 10, a semiconductor multilayer structure 20 and a reflective metal layer 41. The substrate 10 includes a growth substrate 11 and a light-transmitting substrate 12. The growth substrate 11 is perpendicular to the light-transmitting substrate 12, and the growth substrate 11 is located in the middle of the light-transmitting substrate 12. The semiconductor multilayer structure 20 is arranged on the surface of the growth substrate 11. The reflective metal layer 41 is arranged on the side of the semiconductor multilayer structure 20 away from the growth substrate 11. A reflective wall 411 is arranged on the reflective metal layer 41. The reflective wall 411 is inclined to form an acute angle with the light-transmitting substrate 12, as shown in FIG. Figure 3 As shown, when the semiconductor multilayer structure 20 is applied with voltage and emits light of a specific wavelength, part of the light will irradiate the reflective wall 411, and project the light toward the light-transmitting substrate 12 after being reflected by the reflective wall 411, so that the light is directed in front of the light-transmitting substrate 12 to complete the light emission of the LED chip. The MiniLED chip for direct display screen pixels provided by the embodiment of the present invention separates the substrate 10 into a growth substrate 11 and a light-transmitting substrate 12. Since the growth substrate 11 is only used for the growth and formation of the semiconductor multilayer structure 20, and the growth substrate 11 is not used for the transmission of light, the thickness of the growth substrate 11 will not affect the light extraction efficiency. The thickness of the growth substrate 11 does not need to be thinned and is therefore not easily damaged. It is only necessary to thin the light-transmitting substrate 12 in the final process, which effectively reduces the probability of damage to the substrate 10 during the chip production process. In addition, the substrate 10 is composed of a growth substrate 11 and a light-transmitting substrate 12 vertically arranged to each other. The growth substrate 11 plays a certain reinforcing role on the light-transmitting substrate 12, so that the light-transmitting substrate 12 is not easily damaged, which effectively solves the problem of the existing substrate being too thin and easy to be damaged.
[0028] In some of the embodiments, the substrate 10 may be made of, but is not limited to, transparent materials such as sapphire and silicon carbide.
[0029] In some of the embodiments, the semiconductor multilayer structure 20 includes an N-type semiconductor layer 21, a multi-quantum well layer 22 and a P-type semiconductor layer 23 stacked in sequence, and the N-type semiconductor layer 21 is stacked on the surface of the growth substrate 11. When a voltage is applied between the N-type semiconductor layer 21 and the P-type semiconductor layer 23, the electrons in the N-type semiconductor layer and the holes in the P-type semiconductor layer recombine in the multi-quantum well layer 22 to emit light of a specific wavelength, and the light is transmitted from the side of the N-type semiconductor layer 21 facing away from the P-type semiconductor layer 23, and then reflected toward the light-transmitting substrate 12 via a reflective wall 411 of a reflective metal layer 41.
[0030] like Figure 2 and Figure 3As shown, in some embodiments, two semiconductor multilayer structures 20 are provided, and the two semiconductor multilayer structures 20 are symmetrically arranged on two opposite surfaces of the growth substrate 11, and two reflective metal layers 41 are correspondingly provided, and the two reflective metal layers 41 are respectively arranged on the side of the two semiconductor multilayer structures 20 away from the growth substrate 11. On the one hand, compared with the existing chips, in the MiniLED chip for direct display screen pixels provided by the embodiment of the present invention, two semiconductor multilayer structures 20 are designed in one chip, and the semiconductor multilayer structure 20 is arranged at an angle to the light-transmitting substrate 12, so that in the same unit space, the chip designed in the embodiment of the present invention can have a stronger brightness.
[0031] like Figure 2 and Figure 3 As shown, in some of the embodiments, the semiconductor multilayer structure 20 is inclined relative to the light-transmitting substrate 12, and an acute angle is formed between the side of the semiconductor multilayer structure 20 facing the reflective metal layer 41 and the light-transmitting substrate 12. According to this design, the light emitted from the semiconductor multilayer structure 20 to the reflective wall 411 has a larger incident angle, so the reflection angle increases accordingly when it is emitted through the reflective wall 411. In this way, the angle between the light reflected from the reflective wall 411 and passing through the light-transmitting substrate 12 and the normal of the light-transmitting substrate 12 can be reduced, thereby lengthening the distance between the area where the light of the two semiconductor multilayer structures 20 converges and the light-transmitting substrate 12.
[0032] In addition, in some of the embodiments, the two semiconductor multilayer structures 20 in the chip can emit light of different wavelengths, so that the chip provided by the embodiment of the present invention can converge the two light rays generated by the two different semiconductor multilayer structures 20 in front of the light-transmitting substrate 12 and form a composite color light, which is more diversified than the existing chip functions.
[0033] like Figure 1 , Figure 2 and Figure 3 As shown, in some embodiments, a second reflective metal layer 42 is further included. The second reflective metal layer 42 is disposed between the semiconductor multilayer structure 20 and the growth substrate 11. The second reflective metal layer 42 is used to reflect light toward the reflective wall 411 of the first reflective metal layer 41, so that part of the light that passes through the N-type semiconductor layer 21 is reflected back to the reflective wall 411, and then reflected by the first reflective wall 411 toward the light-transmitting substrate 12. Specifically, a second reflective wall 421 is provided on the second reflective metal layer 42, and the angle formed between the second reflective wall 421 and the first reflective wall 411 toward the light-transmitting substrate 12 is an acute angle, as shown in FIG. Figure 3As shown, when part of the light hits the second reflective wall 421, when the light is reflected back to the first reflective wall 411, the angle formed between the light and the first reflective wall 411 toward the side of the light-transmitting substrate 12 is an obtuse angle, so that the light reflected by the first reflective wall 411 is directed toward the light-transmitting substrate 12, effectively reducing light loss and ensuring luminous efficiency.
[0034] like Figure 2 As shown, in some of the embodiments, a light-transmitting layer 30 is arranged between the semiconductor multilayer structure 20 and the reflective metal layer 41. The light-transmitting layer 30 can be but is not limited to air or a transparent material, and the refractive index of the light-transmitting layer 30 is changed by selecting a light-transmitting layer 30 of different materials, thereby affecting the change of the refraction path of the light passing through the light-transmitting layer 30, so as to change the propagation direction of the light transmitted from the light-transmitting substrate 12.
[0035] like Figure 2 As shown, in some of the embodiments, an N-type electrode 51 and a P-type electrode 52 are further included, the N-type electrode 51 is electrically connected to the N-type semiconductor layer 21, and the N-type electrode 51 is arranged on the side of the N-type semiconductor layer 21 away from the light-transmitting substrate 12, and the P-type electrode 52 is electrically connected to the P-type semiconductor layer 23, and the P-type electrode 52 is arranged on the side of the P-type semiconductor layer 23 away from the light-transmitting substrate 12.
[0036] like Figure 3 As shown, in some embodiments, the reflective metal layer 2 42 is in contact with and connected to the N-type semiconductor layer 21, and the reflective metal layer 2 42 is in contact with and connected to the N-type electrode 51. The reflective metal layer 2 42 made of metal material has excellent thermal conductivity, thereby achieving good electrical conduction and heat dissipation effects on the multi-layer semiconductor structure 20. In addition, the reflective metal layer 1 41 is in contact with and connected to the P-type semiconductor layer 23, and the reflective metal layer 1 41 is in contact with and connected to the P-type electrode 52. The reflective metal layer 1 41 made of metal material has excellent thermal conductivity, thereby achieving good electrical conduction and heat dissipation effects on the multi-layer semiconductor structure 20.
[0037] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.
Claims
1. A MiniLED chip for direct display screen pixels, characterized by: The invention comprises a substrate, a semiconductor multilayer structure and a reflective metal layer 1, wherein the substrate comprises a growth substrate and a light-transmitting substrate, wherein the growth substrate is perpendicular to the light-transmitting substrate and is located in the middle of the light-transmitting substrate, wherein the semiconductor multilayer structure is arranged on the surface of the growth substrate, wherein the reflective metal layer 1 is arranged on a side of the semiconductor multilayer structure away from the growth substrate, wherein a reflective wall 1 is arranged on the reflective metal layer 1, wherein the reflective wall 1 is inclined to form an acute angle with the light-transmitting substrate, and when a voltage is applied to the semiconductor multilayer structure to emit light of a specific wavelength, part of the light will be irradiated onto the reflective wall 1, and the light will be projected toward the light-transmitting substrate after being reflected by the reflective wall 1, thereby causing the light to be directed toward the front of the light-transmitting substrate.
2. The MiniLED chip for direct display screen pixels according to claim 1, characterized in that: The semiconductor multilayer structure comprises an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer which are stacked in sequence, and the N-type semiconductor layer is stacked on the surface of a growth substrate.
3. The MiniLED chip for direct display screen pixels according to claim 2, characterized in that: Two semiconductor multilayer structures are provided, which are symmetrically arranged on two opposite surfaces of the growth substrate, and two reflective metal layers 1 are correspondingly provided, which are respectively arranged on the side of the two semiconductor multilayer structures away from the growth substrate.
4. The MiniLED chip for direct display screen pixels according to claim 1, characterized in that: The MiniLED chip used for direct display screen pixels also includes a second reflective metal layer, which is arranged between the semiconductor multilayer structure and the growth substrate. The second reflective metal layer is used to reflect light onto a first reflective wall of the first reflective metal layer.
5. The MiniLED chip for direct display screen pixels according to claim 4, characterized in that: A second reflective wall is disposed on the second reflective metal layer, and an angle formed between the second reflective wall and the first reflective wall and facing the light-transmitting substrate is an acute angle.
6. The MiniLED chip for direct display screen pixels according to claim 3, characterized in that: The two semiconductor multilayer structures in the chip are capable of emitting light of different wavelengths.
7. The MiniLED chip for direct display screen pixels according to claim 1, characterized in that: The semiconductor multilayer structure is inclined relative to the light-transmitting substrate, and an acute angle is formed between a surface of the semiconductor multilayer structure facing the reflective metal layer and the light-transmitting substrate.
8. The MiniLED chip for direct display screen pixels according to claim 1, characterized in that: A light-transmitting layer is arranged between the semiconductor multilayer structure and the first reflective metal layer.
9. The MiniLED chip for direct display screen pixels according to claim 2, characterized in that: The MiniLED chip for direct display screen pixels also includes an N-type electrode and a P-type electrode. The N-type electrode is electrically connected to the N-type semiconductor layer, and the N-type electrode is arranged on the side of the N-type semiconductor layer away from the light-transmitting substrate. The P-type electrode is electrically connected to the P-type semiconductor layer, and the P-type electrode is arranged on the side of the P-type semiconductor layer away from the light-transmitting substrate.
10. The MiniLED chip for direct display screen pixels according to claim 9, characterized in that: The second reflective metal layer is connected to the N-type semiconductor layer, and the second reflective metal layer is connected to the N-type electrode. In addition, the first reflective metal layer is connected to the P-type semiconductor layer, and the first reflective metal layer is connected to the P-type electrode.