Preparation method of photoelectric device, photoelectric device and electronic equipment

Abstract

The invention discloses a preparation method of a photoelectric device, the photoelectric device and electronic equipment, and the method comprises the steps: providing a bottom electrode, and forming a functional layer at one side of the bottom electrode; and a top electrode is formed on one side, far away from the bottom electrode, of the functional layer, the functional layer comprises a first carrier functional layer, and the preparation method of the first carrier functional layer comprises the following steps: providing a film layer containing an inorganic material; post-treatment is carried out on the film layer, the post-treatment comprises gas medium discharge breakdown treatment and solvent annealing treatment, the first carrier function layer is obtained, the ending time point of the solvent annealing treatment is not earlier than the ending time point of the gas medium discharge breakdown treatment, the performance of the photoelectric device is improved, and the service life of the device is prolonged; when the photoelectric device prepared by the preparation method of the photoelectric device is applied to the electronic equipment, the display effect, the service life and the performance stability of the electronic equipment can be improved.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a method for preparing an optoelectronic device, an optoelectronic device, and an electronic device. Background Art

[0002] Photoelectric devices refer to a type of device made using the photoelectric effect of semiconductors, including but not limited to light-emitting devices, solar cells or photodetectors. Taking light-emitting devices as an example, light-emitting devices include but are not limited to organic light-emitting diodes 10 (Organic Light-Emitting Diode, OLED) and quantum dot light-emitting diodes (Quantum Dot Light-Emitting Diodes, QLED). OLED / QLED has a "sandwich" structure, that is, it includes an anode, a cathode and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of OLED / QLED is: electrons are injected from the cathode of the device into the light-emitting area, and holes are injected from the anode of the device into the light-emitting area. Electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings and the device life of optoelectronic devices needs to be further improved. Summary of the invention

[0004] The present application provides a method for preparing a photoelectric device, a photoelectric device and an electronic device to improve the device life of the photoelectric device.

[0005] In a first aspect, the present application provides a method for preparing an optoelectronic device, comprising the following steps:

[0006] providing a bottom electrode, and forming a functional layer on one side of the bottom electrode; and

[0007] forming a top electrode on a side of the functional layer away from the bottom electrode;

[0008] Wherein, the functional layer includes a first carrier functional layer, and the preparation method of the first carrier functional layer includes the following steps:

[0009] providing a film layer, the film layer comprising an inorganic material; and

[0010] The film layer is post-processed, and the post-processing includes a gas dielectric discharge breakdown treatment and a solvent annealing treatment to obtain the first carrier functional layer.

[0011] In a second aspect, the present application further provides a photoelectric device, which is prepared using any one of the preparation methods described in the first aspect.

[0012] In a third aspect, the present application provides an electronic device, wherein the electronic device comprises an optoelectronic device manufactured by any one of the preparation methods described in the first aspect.

[0013] The present application provides a method for preparing an optoelectronic device, an optoelectronic device, and an electronic device, which have the following technical effects:

[0014] In the preparation method of the optoelectronic device, the first carrier functional layer is prepared by combining gas dielectric discharge breakdown treatment and solvent annealing treatment. On the one hand, the advantages of solvent annealing can be fully utilized, such as avoiding high temperature damage to some functional sublayers located below the first carrier functional layer, and improving the thickness uniformity and surface flatness of the first carrier functional layer; on the other hand, the adverse effects of solvent annealing on the morphology, structure and performance of the first carrier functional layer are reduced or eliminated by gas dielectric discharge breakdown treatment, thereby improving the performance and device life of the optoelectronic device. The optoelectronic device prepared by the preparation method of the optoelectronic device is applied to electronic devices, which is conducive to improving the display effect, service life and performance stability of the electronic devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0016] Figure 1 A schematic flow chart of a method for preparing a first carrier functional layer provided in an embodiment of the present application;

[0017] Figure 2 A schematic diagram of the structure of a first optoelectronic device provided in an embodiment of the present application;

[0018] Figure 3 A schematic diagram of the structure of a second optoelectronic device provided in an embodiment of the present application;

[0019] Figure 4 A schematic diagram of the structure of a third optoelectronic device provided in an embodiment of the present application;

[0020] Figure 5 A schematic structural diagram of a fourth optoelectronic device provided in an embodiment of the present application.

[0021] The reference numerals are as follows:

[0022] 10: Optoelectronic device, 101: bottom electrode, 102: top electrode, 103: functional layer, 104: substrate, 1031: first carrier functional layer, 1032: light emitting layer, 1033: second carrier functional layer, 10331: hole injection layer, 10332: hole transport layer. DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0024] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0025] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0026] In the description of the present application, the term “including” means “including but not limited to”.

[0027] The term "at least one" means one or more, and "multiple" means two or more. The term "at least one", "at least one of the following" or similar expressions refer to any combination of these items, including any combination of single items or plural items. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e. a and b), ac, bc or abc, where a, b and c can be single or plural, respectively.

[0028] In the present application, the description of "layer A is formed on one side of layer B" or "layer A is formed on the side of layer B away from layer C" may mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B; it may also mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other film layers may be formed between layer A and layer B.

[0029] The selection scope of the term "and / or" includes any one of two or more related listed items, and also includes any and all combinations of the related listed items, and the said any and all combinations include any combination of two related listed items, any more related listed items, or all related listed items. For example, "A and / or B" includes three parallel solutions of A, B and A+B. For another example, the technical solution of "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (that is, the technical solution connected by "logical or"), and also includes any and all combinations of A, B, C, and D, that is, the combination of any two or any three of A, B, C, and D, and also includes the combination of four items of A, B, C, and D (that is, the technical solution connected by "logical and").

[0030] The applicant found that in the preparation process of optoelectronic devices, the thermal annealing process is often used to treat the functional layer, that is, to improve the performance of the functional material by heating. However, due to the high temperature of the thermal annealing process (for example, higher than 100°C), the thermal annealing process may cause certain damage to the device, for example: first, high-temperature thermal annealing may cause damage to the thermosensitive material in the flexible substrate or other layers; second, during the high-temperature thermal annealing process, the atoms or molecules between the layers may diffuse, resulting in the blurring of the interlayer interface, which has a negative impact on the optoelectronic performance and device life of the optoelectronic device. If the solvent annealing process is used instead of the thermal annealing process to treat the functional layer, although the problem of high temperature damage to some film layers is avoided and the thickness uniformity and surface flatness of the functional layer can be improved, it still has disadvantages: first, there is a problem of solvent residue, which has a negative impact on the optoelectronic performance and performance stability of the optoelectronic device; second, during the solvent annealing process of the film layer, the film layer may swell, which has a negative impact on the morphology, structure and performance of the film layer; third, there is also the problem of interlayer diffusion.

[0031] Based on this, an embodiment of the present application provides a method for preparing a photoelectric device, wherein the photoelectric device includes but is not limited to a light emitting device, a solar cell or a photodetector, and the method for preparing the photoelectric device comprises the following steps:

[0032] S1. providing a bottom electrode and forming a functional layer on one side of the bottom electrode;

[0033] S2. Form a top electrode on a side of the functional layer away from the bottom electrode.

[0034] Wherein, the functional layer includes a first carrier functional layer, such as Figure 1 As shown, the preparation method of the first carrier functional layer includes the following steps:

[0035] S11, providing a film layer, wherein the film layer comprises an inorganic material;

[0036] S12, post-processing the film layer, the post-processing including gas dielectric discharge breakdown treatment and solvent annealing treatment, to obtain a first carrier functional layer.

[0037] In the preparation method of the optoelectronic device of the embodiment of the present application, the first carrier functional layer is prepared by combining gas dielectric discharge breakdown treatment and solvent annealing treatment. On the one hand, the advantages of solvent annealing can be fully utilized, such as avoiding high temperature damage to some functional sublayers located below the first carrier functional layer, and improving the thickness uniformity and surface flatness of the first carrier functional layer; on the other hand, the gas dielectric discharge breakdown treatment is used to reduce or eliminate the adverse effects of solvent annealing on the morphology, structure and performance of the first carrier functional layer, that is, the gas dielectric discharge breakdown treatment can perform surface modification and structural adjustment on the film layer, thereby improving the performance and device life of the optoelectronic device.

[0038] In the preparation method of the first carrier functional layer, the gas dielectric discharge breakdown treatment is a process for improving the performance of the film layer by generating high electric field strength and discharge breakdown plasma. First, the plasma generated by the gas dielectric discharge breakdown treatment can improve the solubility and hydrophilicity of the film layer surface, thereby facilitating the diffusion and penetration of the solvent in the film layer, thereby enhancing the beneficial effect of solvent annealing on the performance of the film layer; second, in the process of gas dielectric discharge breakdown treatment of the film layer, it can cause changes in the internal structure of the film layer, such as rearrangement of grains, defect repair and phase change, etc., which is beneficial to the diffusion and reaction of the solvent inside the film layer, thereby facilitating the improvement of the performance of the first carrier functional layer; third, the plasma generated by the gas dielectric discharge breakdown treatment can remove the solvent remaining in the film layer due to solvent annealing, thereby facilitating the improvement of the purity and performance stability of the first carrier functional layer; fourth, the gas dielectric discharge breakdown treatment method has the advantages of being environmentally friendly, does not require a large amount of chemical reagents, and the generated plasma can disappear in a short time.

[0039] In order to further improve the film-forming quality of the first carrier functional layer, in some embodiments of the present application, the end time point of the solvent annealing treatment in step S12 is not earlier than the end time point of the gas dielectric discharge breakdown treatment.

[0040] In order to enhance the beneficial effects of gas dielectric discharge breakdown treatment on the performance and stability of optoelectronic devices, in some embodiments of the present application, the gas medium used in the gas dielectric discharge breakdown treatment includes one or more of oxygen, nitrogen, argon, ammonia, fluorine, hydrogen, helium, neon, krypton and xenon.

[0041] As an example, the gas medium used in the gas dielectric discharge breakdown treatment is oxygen. Oxygen plasma will be generated during the gas dielectric discharge breakdown treatment. The oxygen plasma acts on the film layer to produce oxygen-containing functional groups on the surface of the film layer, thereby improving the hydrophilicity and solubility of the film layer.

[0042] As another example, the gas medium used in the gas dielectric discharge breakdown treatment is nitrogen. Nitrogen plasma will be generated during the gas dielectric discharge breakdown treatment. The nitrogen plasma acts on the film layer to produce nitrogen-containing functional groups on the surface of the film layer, thereby improving the hydrophilicity and solubility of the film layer. In addition, when the inorganic material is a metal oxide, nitrogen atoms will replace some oxygen atoms in the lattice of the inorganic material, thereby changing the photoelectric properties of the inorganic material. For example, when the inorganic material is ZnO, the nitrogen-doped ZnO formed after the gas dielectric discharge breakdown treatment has better conductivity and photocatalysis than ZnO.

[0043] As another example, the gas medium used in the gas dielectric discharge breakdown treatment is argon gas, and argon plasma is generated during the gas dielectric discharge breakdown treatment process, which can clean and activate the surface of the film layer, thereby improving the hydrophilicity and solubility of the film layer. In addition, argon gas is an inert gas, so it will not generate new chemical bonds on the surface of the film layer.

[0044] As another example, the gas medium used in the gas dielectric discharge breakdown treatment is fluorine gas, and fluorine plasma is generated during the gas dielectric discharge breakdown treatment. The fluorine plasma acts on the film layer to produce fluorine-containing functional groups on the surface of the film layer, thereby improving the hydrophilicity and solubility of the film layer. In addition, the fluorine plasma can etch the surface of the film layer, which is conducive to removing impurities.

[0045] As another example, the gas medium used in the gas dielectric discharge breakdown treatment is hydrogen. Hydrogen plasma will be generated during the gas dielectric discharge breakdown treatment process. The hydrogen plasma can reduce the surface of the film layer to remove oxides and organic contamination, thereby improving the hydrophilicity and solubility of the film layer.

[0046] As another example, the gas medium used in the gas dielectric discharge breakdown treatment is ammonia. Nitrogen plasma and hydrogen plasma will be generated during the gas dielectric discharge breakdown treatment. The technical effects of nitrogen plasma and hydrogen plasma acting on the film layer can be referred to the previous text, which is beneficial to improving the hydrophilicity and solubility of the film layer.

[0047] In order to further enhance the favorable effect of gas dielectric discharge breakdown treatment on the performance and stability of optoelectronic devices, in some embodiments of the present application, during the process of gas dielectric discharge breakdown treatment of the film layer, the discharge voltage is 1 kV to 30 kV, for example, it can be 1 kV, 2 kV, 5 kV, 7 kV, 10 kV, 15 kV, 20 kV, 25 kV, 30 kV or a value between any two of the foregoing values; and / or, the discharge frequency is 0.05 Hz to 0.5 Hz, for example, it can be 0.05 Hz, 0.1 Hz, 0.2 Hz, 0. .3Hz, 0.4Hz, 0.5Hz or a value between any two of the aforementioned values; and / or, the total time of the gas dielectric discharge breakdown treatment is 30s to 10min, for example, it can be 30s, 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min or a value between any two of the aforementioned values; and / or, the thickness of the film layer is 30nm to 60nm, for example, it can be 30nm, 40nm, 50nm, 60nm or a value between any two of the aforementioned values. It can be understood that the gas dielectric discharge breakdown treatment can be carried out continuously or intermittently, for example, the gas dielectric discharge breakdown treatment includes multiple intermittent gas dielectric discharge breakdown sub-treatments, and the interval time between two adjacent gas dielectric discharge breakdown sub-treatments does not exceed 5s.

[0048] In some embodiments of the present application, the solvent annealing treatment includes the steps of: placing the film layer in a solvent vapor atmosphere for annealing treatment, wherein the solvent vapor is formed by evaporation of a solvent, and the solvent includes one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds. Among them, alkanes include but are not limited to one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include but are not limited to one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include but are not limited to ethylene glycol monomethyl ether, furan compounds include but are not limited to tetrahydrofuran, pyridine compounds include but are not limited to pyridine, and amide compounds include but are not limited to N,N-dimethylformamide. It should be noted that the solvent vapor atmosphere may include, in addition to the steam formed by the vaporization of the solvent, an inert gas, including but not limited to one or more of nitrogen, argon, helium, neon, krypton and xenon; the solvent vapor atmosphere is composed of, for example, steam formed by the vaporization of the solvent and the inert gas, wherein the volume percentage of the inert gas is, for example, 1% to 5%, and the volume percentage of the steam formed by the vaporization of the solvent is, for example, 95% to 99%.

[0049] In order to further enhance the beneficial effects of solvent annealing on the performance and stability of optoelectronic devices, in some embodiments of the present application, during the solvent annealing treatment of the film layer, the pressure of the solvent vapor atmosphere is 15KPa-20KPa, for example, it can be 15KPa, 16KPa, 17KPa, 18KPa, 19KPa, 20KPa or a value between any two of the aforementioned values; and / or, the temperature of the solvent annealing treatment is 20°C-60°C, for example, it can be 20°C, 30°C, 40°C, 50°C, 60°C or a value between any two of the aforementioned values; and / or, the total time of the solvent annealing treatment is 2min-8min, for example, it can be 2min, 3min, 4min, 5min, 6min, 7min, 8min or a value between any two of the aforementioned values; and / or, the thickness of the film layer is 30nm-60nm, for example, it can be 30nm, 40nm, 50nm, 60nm or a value between any two of the aforementioned values. It is understandable that the solvent annealing treatment may be performed continuously or intermittently. For example, the solvent annealing treatment includes a plurality of intermittent solvent annealing sub-treatments, and the interval between two adjacent solvent annealing sub-treatments does not exceed 5 seconds.

[0050] In order to further improve the performance and stability of the first carrier functional layer, in some embodiments of the present application, during the post-treatment process, the gas dielectric discharge breakdown treatment is performed in a first time period, and the solvent annealing treatment is performed in a second time period, and the first time period and the second time period are any of the following situations:

[0051] (a) The first time period and the second time period do not overlap at all, and the first time period is before the second time period;

[0052] (b) The first time period and the second time period at least partially overlap.

[0053] It should be noted that the entire time period from the start time point of the post-treatment to the end time point of the post-treatment is T, and T is the time range set by the operator, which can be obtained by repeated experiments, and T will be different for different types of inorganic materials. In some embodiments of the present application, the total time of T is 30s to 10min, for example, it can be 30s, 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min or a value between any two of the foregoing values.

[0054] The first time period is from the start time point of the gas dielectric discharge breakdown treatment to the end time point of the gas dielectric discharge breakdown treatment. If the gas dielectric discharge breakdown treatment includes multiple intermittent gas dielectric discharge breakdown sub-treatments, the start time point of the first gas dielectric discharge breakdown sub-treatment is used as the start time point of the gas dielectric discharge breakdown treatment, and the end time point of the last gas dielectric discharge breakdown sub-treatment is used as the end time point of the gas dielectric discharge breakdown treatment. T and the first time period may completely overlap (the start time point of the gas dielectric discharge breakdown treatment is the same as the start time point of the post-treatment, and the end time point of the gas dielectric discharge breakdown treatment is the same as the end time point of the post-treatment), or the first time period is within T.

[0055] The second time period is from the start time point of the solvent annealing treatment to the end time point of the solvent annealing treatment. If the solvent annealing treatment includes multiple discontinuous solvent annealing sub-treatments, the start time point of the first solvent annealing sub-treatment is used as the start time point of the solvent annealing treatment, and the end time point of the last solvent annealing sub-treatment is used as the end time point of the solvent annealing treatment. The second time period is within T.

[0056] For case (a), "the first time period and the second time period do not overlap at all" means that there is no situation where the gas dielectric discharge breakdown treatment process and the solvent annealing treatment process are performed simultaneously. In order to further improve the performance and stability of the first carrier functional layer, in some embodiments of the present application, the voltage of the gas dielectric discharge breakdown treatment is 15kV to 30kV, for example, 15kV, 20kV, 25kV, 30kV or a value between any two of the foregoing values; and / or, the total time of the first time period is 30s to 10min, for example, it can be 30s, 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min or a value between any two of the foregoing values.

[0057] For case (b), "the first time period and the second time period at least partially overlap" means that there is a situation where the gas dielectric discharge breakdown treatment process and the solvent annealing treatment process are carried out simultaneously, and there is a situation where the first time period and the second time period partially overlap or completely overlap, wherein the situation where the first time period and the second time period completely overlap means: the starting time point of the gas dielectric discharge breakdown treatment is the same as the starting time point of the solvent annealing treatment, and the ending time point of the gas dielectric discharge breakdown treatment is the same as the ending time point of the solvent annealing treatment, and further, the first time period, the second time period and T can completely overlap with each other. It can be understood that when the gas dielectric discharge breakdown treatment process and the solvent annealing treatment process are carried out simultaneously, the solvent vapor atmosphere is composed of, for example, steam formed by solvent vaporization and an inert gas, wherein the inert gas can be used as the gas medium of the gas dielectric discharge breakdown treatment process.

[0058] For case (b), in order to further improve the performance and stability of the first carrier functional layer, in some embodiments of the present application, the gas dielectric discharge breakdown treatment includes a first gas dielectric discharge breakdown sub-treatment and a second gas dielectric discharge breakdown sub-treatment that are independent of each other, the first gas dielectric discharge breakdown sub-treatment is performed in the T1 time period within the first time period, and the second gas dielectric discharge breakdown sub-treatment is performed in the T2 time period within the first time period, the T1 time period is before the T2 time period, the T1 time period overlaps with the second time period at least partially, and the T2 time period does not overlap with the second time period at all. In the T1 time period, the first gas dielectric discharge breakdown sub-treatment can be performed continuously or intermittently; similarly, in the T2 time period, the second gas dielectric discharge breakdown sub-treatment can be performed continuously or intermittently. It should be noted that the role of the first gas dielectric discharge breakdown sub-treatment is to assist the solvent annealing treatment to eliminate or improve the negative impact of the solvent annealing treatment on the film layer, which is beneficial to improving the efficiency of the solvent annealing treatment; the role of the second gas dielectric discharge breakdown sub-treatment is to further remove the residual solvent due to the solvent annealing treatment, and enable the generated plasma to enter the lattice of the inorganic material. When the inorganic material is a metal oxide, it can effectively passivate the surface defects of the inorganic material, which is beneficial to improving the performance and stability of the optoelectronic device.

[0059] In order to further improve the effect of the solvent annealing treatment, in some embodiments of the present application, the voltage of the first gas dielectric discharge breakdown treatment is 2kV~10kV, for example, it can be 2kV, 3kV, 4kV, 5kV, 6kV, 7kV, 8kV, 9kV, 10kV or a value between any two of the foregoing values; the total time of the T1 time period is 2min~8min, for example, it can be 2min, 3min, 4min, 5min, 6min, 7min, 8min or a value between any two of the foregoing values.

[0060] In order to take into account both improving the comprehensive performance of the optoelectronic device and reducing the risk of damage to the film layer, in some embodiments of the present application, the voltage of the second gas dielectric discharge breakdown treatment is 15kV~30kV, for example, it can be 15kV, 20kV, 25kV, 30kV or a value between any two of the aforementioned values; the total time of the T2 time period is 30s~200s, for example, it can be 30s, 50s, 60s, 80s, 100s, 130s, 150s, 180s, 200s or a value between any two of the aforementioned values.

[0061] In order to improve the efficiency of gas dielectric discharge breakdown treatment and reduce the breakdown voltage required for gas dielectric discharge, in some embodiments of the present application, post-treatment also includes microwave irradiation treatment. During the post-treatment process, the gas dielectric discharge breakdown treatment is performed in a first time period, the solvent annealing treatment is performed in a second time period, and the microwave irradiation treatment is performed in a third time period, and the third time period at least partially overlaps with the first time period.

[0062] It should be noted that the microwave irradiation treatment can be carried out continuously or intermittently. The third time period is from the starting time point of the microwave irradiation treatment to the ending time point of the microwave irradiation treatment. If the microwave irradiation treatment includes multiple microwave radiation sub-treatments carried out intermittently, the starting time point of the first microwave radiation sub-treatment is used as the starting time point of the microwave irradiation treatment, and the ending time point of the last microwave radiation sub-treatment is used as the ending time point of the microwave irradiation treatment. The third time period can be within T or completely overlap with T, and the third time period can completely overlap or partially overlap with the first time period. The relationship between the first time period and the second time period can refer to the above text.

[0063] In some embodiments of the present application, when the first time period and the second time period are the aforementioned situation (a), the third time period and the second time period may at least partially overlap or not overlap at all, the voltage of the gas dielectric discharge breakdown treatment is, for example, 5kV to 10kV, and / or the total time of the first time period is 30s to 8min. In order to reduce the cost of post-processing, the third time period and the second time period may not overlap at all.

[0064] In some other embodiments of the present application, when the first time period and the second time period are the aforementioned situation (b), the third time period at least covers the T2 time period to reduce the discharge voltage of the second gas dielectric discharge breakdown sub-treatment. Although the second gas dielectric discharge breakdown sub-treatment can improve the comprehensive performance of the optoelectronic device and can avoid high temperature from damaging the functional sub-layer below the film layer, it requires an extremely high discharge voltage to trigger the discharge. However, too high a voltage will reduce the controllability and may cause damage to the film layer. The film layer is treated by combining microwave irradiation treatment with the second gas dielectric discharge breakdown sub-treatment, which can effectively reduce the discharge voltage of the second gas dielectric discharge breakdown sub-treatment. For example, the discharge voltage in the second gas dielectric discharge breakdown sub-treatment can be reduced from 15kV to 30kV to 5kV to 10kV, and the total time of the T2 time period is 30s to 200s.

[0065] Furthermore, in order to reduce the discharge voltage of the first gas dielectric discharge breakdown sub-processing, in some embodiments of the present application, the third time period also covers the T1 time period, the voltage of the first gas dielectric discharge breakdown sub-processing is 1kV~5kV, and the total time of the T1 time period is 2min~8min.

[0066] In order to further improve the performance and stability of the first carrier functional layer, in some embodiments of the present application, the microwave frequency of the microwave irradiation treatment is 2000MHz~3000MHz, for example, it can be 2000MHz, 2200MHz, 2500MHz, 2800MHz, 3000MHz or a value between any two of the aforementioned values; and / or, the microwave power of the microwave irradiation treatment is 50W~500W, for example, it can be 50W, 100W, 200W, 300W, 400W, 500W or a value between any two of the aforementioned values; the total time of the third time period is 30s~20min, for example, it can be 30s, 50s, 1min, 5min, 10min, 15min, 20min or a value between any two of the aforementioned values.

[0067] To facilitate process control, in some embodiments of the present application, the end time point of the microwave irradiation treatment, the end time point of the gas dielectric discharge breakdown treatment, and the end time point of the post-treatment are the same; and / or, the start time point of the microwave irradiation treatment is the same as the start time point of the gas dielectric discharge breakdown treatment.

[0068] Under the premise that post-processing includes microwave irradiation treatment, in order to take into account both improving the comprehensive performance of optoelectronic devices and reducing the risk of damage to the film layer, in some embodiments of the present application, for gas dielectric discharge breakdown treatment, the discharge voltage is 1kV to 10kV, for example, it can be 1kV, 2kV, 3kV, 4kV, 5kV, 6kV, 7kV, 8kV, 9kV, 10kV or a value between any two of the foregoing values.

[0069] Continuing to refer to step S1, in order to improve the effect of post-processing, in some embodiments of the present application, the providing of the film layer includes the steps of:

[0070] S101, depositing a first dispersion liquid containing an inorganic material;

[0071] S102, drying the deposited first dispersion to obtain the film layer.

[0072] In step S1, the deposition method of the solution containing the inorganic material includes, but is not limited to, one or more of spin coating, printing, inkjet printing, blade coating, printing, dip-coating, immersion, spraying, roll coating, casting, slot coating, strip coating, and electrodeposition. The inorganic material includes a metal element, and the metal element is selected from, for example, one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals, and transition metals. The dispersant of the first dispersion liquid is, for example, selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds, wherein alkanes include, but are not limited to, one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include, but are not limited to, one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include, but are not limited to, one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include, but are not limited to, one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include, but are not limited to, ethylene glycol monomethyl ether, furan compounds include, but are not limited to, tetrahydrofuran, pyridine compounds include, but are not limited to, pyridine, and amide compounds include, but are not limited to, N,N-dimethylformamide.

[0073] In some embodiments of the present application, in order to improve the effect of solvent annealing, in some embodiments of the present application, the dispersant of the first dispersion is the same as the solvent used in the solvent annealing. As an example, the dispersant of the first dispersion and the solvent used in the solvent annealing are both ethanol.

[0074] In order to improve both the density of the film layer and the dispersion performance of the inorganic material in the first dispersion, in some embodiments of the present application, the concentration of the inorganic material in the first dispersion is 10 mg / mL to 50 mg / mL, for example, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL or a value between any two of the foregoing values.

[0075] In step S2, "drying treatment" includes all processes that can make the deposited first dispersion containing inorganic materials obtain higher energy and transform into a solidified film, including but not limited to heat treatment or vacuum drying treatment, and the heat treatment includes but is not limited to a constant temperature heat treatment process or a non-constant temperature heat treatment process (for example, the temperature changes in a gradient). It should be noted that in order to avoid damage to the functional sublayer below the film layer by heat treatment, the temperature of the heat treatment is 20°C to 40°C.

[0076] Continuing to refer to step S1 and step S2, in step S1 and step S2, one of the bottom electrode and the top electrode is an anode, and the other is a cathode. In order to improve the comprehensive performance of the optoelectronic device, in some embodiments of the present application, the materials of the bottom electrode and the top electrode are, for example, independently selected from one or more of metals, carbon materials, and fifth metal oxides, wherein the metals include but are not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, and Mg; the carbon materials include but are not limited to one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the second metal oxide may be doped or undoped, including but not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO). The bottom electrode or the top electrode may also be a composite electrode, which has a structure similar to a "sandwich", wherein the materials of the upper and bottom layers are respectively doped or non-doped transparent metal oxides, and the material of the middle layer is a metal, for example, it may be one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. The thickness of the bottom electrode and the top electrode is, for example, independently selected from 20 nm to 300 nm.

[0077] In some embodiments of the present application, the optoelectronic device is a light-emitting device, and the functional layer includes a light-emitting layer. Then, the step of forming the functional layer on one side of the bottom electrode in step S1 includes: forming a light-emitting layer between the bottom electrode and the first carrier functional layer or between the first carrier functional layer and the top electrode. The light-emitting layer may be a single layer, or the light-emitting layer may be two or more layers, and the thickness of the light-emitting layer is, for example, 10 nm to 100 nm. The material of the light-emitting layer includes, for example, one or more of an organic light-emitting material and a quantum dot.

[0078] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials. One or more.

[0079] The quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots include, but are not limited to, one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2nm to 20nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, or a value between any two of the foregoing values.

[0080] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0081] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + ion, M is a divalent metal cation, M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0082] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0083] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0084] In order to improve the solution processing performance of quantum dots and further improve the luminous efficiency of optoelectronic devices, in some embodiments of the present application, the surface of the quantum dots is also connected with ligands. The ligands can be common ligands in the art, including but not limited to ligands containing hydroxyl, amino, thiol, carboxyl, C1-C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Aliphatic thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C1~C 30 Aromatic phosphine ligands and C1~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0085] Among them, the fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. The thiol aromatic ligands include, but are not limited to, one or more of benzene mercaptan, triphenylmethyl mercaptan and p-terphenyl-4,4"-dithiol. The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine. The aromatic amine ligands include, but are not limited to, aniline, indenepropylamine, 4-octylaniline and and one or more of benzidine. Aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, aromatic phosphine ligands include but are not limited to one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, aromatic phosphate ligands include but are not limited to one or more of tetraethyl p-xylene diphosphate and diphenylethyl phosphate. Halogen ligands include but are not limited to -Cl, -F, -I or -Br.

[0086] It can be understood that when the optoelectronic device is a light-emitting device, the optoelectronic device can be an upright structure or an inverted structure, and the optoelectronic device can be a top emission type or a bottom emission type, and the first carrier functional layer can be an electron functional layer or a hole functional layer.

[0087] In some embodiments of the present application, the first carrier functional layer is an electronic functional layer, and the inorganic material is selected from an undoped first metal oxide and / or a doped second metal oxide, and the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a first main metal oxide doped with a first doping element, and the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn. Wherein, the non-doped first metal oxide includes but is not limited to one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide includes but is not limited to ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the first doping element includes but is not limited to one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and the molar percentage of the first doping element in the doped second metal oxide is, for example, not higher than 5%, not higher than 10%, not higher than 20%, not higher than 30% or not higher than 50%. The doped second metal oxide includes but is not limited to one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide and titanium lithium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li xOne or more of O, where 0<x≤0.5.

[0088] Furthermore, the method for preparing the optoelectronic device also includes the step of: forming a second carrier functional layer between the anode and the first carrier functional layer, the second carrier functional layer is a hole functional layer, and the thickness of the second carrier functional layer is, for example, 10nm to 100nm. It can be understood that when the optoelectronic device is a light-emitting device of a positive structure, the step of forming the functional layer on one side of the bottom electrode includes: forming the second carrier functional layer, the light-emitting layer and the first carrier functional layer in sequence on one side of the bottom electrode; when the optoelectronic device is a light-emitting device of an inverted structure, the step of forming the functional layer on one side of the bottom electrode includes: forming the first carrier functional layer, the light-emitting layer and the second carrier functional layer in sequence on one side of the bottom electrode. It should be noted that when the material of the second carrier functional layer is a metal oxide, the method for preparing the second carrier functional layer can refer to the method for preparing the first carrier functional layer.

[0089] The material of the second carrier functional layer includes, but is not limited to, one or more of a non-doped first inorganic compound, a doped second inorganic compound, and an organic compound. The organic compound includes, but is not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), Polypyrrole (CAS No. 30604-81-0), 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly (9-vinyl carbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis (9-carbazole) biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N,N-bis (4-methylphenyl) aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly [(9,9-dioctylfluorenyl-2,7-diyl)-co- (4,4'-(N-(4-sec-butylphenyl) diphenyl) aniline)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4"-tris(carbazol-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185 690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviated as Spiro-TPD, CAS No. 65181-78-4),CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9) and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-omeTAD, CAS No. 207739-72-8) are selected from one or more of the following: and / or, the non-doped first inorganic compound includes but is not limited to graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), P-type nitride Gallium, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2) and tungsten sulfide (such as WS2) One or more; and / or, the doped second inorganic compound is a host inorganic compound doped with a second doping element, the host inorganic compound includes but is not limited to graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), P-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2) and tungsten sulfide (such as WS2) One or more, and / or the second doping element includes but is not limited to nickel, molybdenum, tungsten, vanadium, chromium, copper and one or more of platinum group metal elements. ,

[0090] As an alternative embodiment, in some other embodiments of the present application, the first carrier functional layer is a hole functional layer, the inorganic material is selected from an undoped third metal oxide and / or a doped fourth metal oxide, the undoped third metal oxide is selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO and Cu2O; and / or the doped fourth metal oxide is a second main metal oxide doped with a third doping element, the second main metal oxide is selected from NiO, MoO3, WO3, V2O5, CrO3, CuO or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0091] Furthermore, the method for preparing the optoelectronic device also includes the step of: forming a second carrier functional layer between the cathode and the first carrier functional layer, the second carrier functional layer is an electronic functional layer, and the thickness of the second carrier functional layer is, for example, 10nm to 100nm. It can be understood that when the optoelectronic device is a light-emitting device of a positive structure, the step of forming the functional layer on one side of the bottom electrode includes: forming the first carrier functional layer, the light-emitting layer and the second carrier functional layer in sequence on one side of the bottom electrode; when the optoelectronic device is a light-emitting device of an inverted structure, the step of forming the functional layer on one side of the bottom electrode includes: forming the second carrier functional layer, the light-emitting layer and the first carrier functional layer in sequence on one side of the bottom electrode. It should be noted that when the material of the second carrier functional layer is a metal oxide, the method for preparing the second carrier functional layer can refer to the method for preparing the first carrier functional layer.

[0092] The material of the second carrier functional layer includes but is not limited to the non-doped first metal oxide and / or the doped second metal oxide.

[0093] It should be noted that, except for the first carrier functional layer, the preparation methods of other layers in the optoelectronic device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and co-precipitation. Physical methods include but are not limited to physical plating and solution methods. Physical plating methods include but are not limited to thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. One or more of solution methods include but are not limited to spin coating, printing, inkjet printing, scraping, printing, dip-coating, immersion, spraying, rolling, casting, slit coating and strip coating.

[0094] The present application also provides a photoelectric device, which is prepared by any of the preparation methods described above. Figure 2 and Figure 3 As shown, the optoelectronic device 10 includes a bottom electrode 101, a top electrode 102 and a functional layer 103, wherein the bottom electrode 101 and the top electrode 102 are arranged opposite to each other, the functional layer 103 is arranged between the bottom electrode 101 and the top electrode 102, and the functional layer 103 includes a first carrier functional layer 1031, and the first carrier functional layer 1031 is an electron functional layer or a hole functional layer. The structural composition of the bottom electrode 101 and the top electrode 102 are all referred to the above description.

[0095] In some embodiments of the present application, the optoelectronic device 10 is a light emitting device. Figure 2 and Figure 3The functional layer 103 further includes a light-emitting layer 1032, which is disposed between the first carrier functional layer 1031 and the bottom electrode 101 ( Figure 2 As shown) or the light emitting layer 1032 is disposed between the first carrier functional layer 1031 and the top electrode 102 ( Figure 3 ). It can be understood that when the first carrier functional layer 1031 is an electronic functional layer and the optoelectronic device 10 is a normal structure, the light-emitting layer 1032 is disposed between the first carrier functional layer 1031 and the bottom electrode 101; when the first carrier functional layer 1031 is an electronic functional layer and the optoelectronic device 10 is an inverted structure, the light-emitting layer 1032 is disposed between the first carrier functional layer 1031 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is a normal structure, the light-emitting layer 1032 is disposed between the first carrier functional layer 1031 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is an inverted structure, the light-emitting layer is disposed between the first carrier functional layer 1031 and the bottom electrode 101.

[0096] In order to further improve the comprehensive performance of the optoelectronic device 10, in some embodiments of the present application, the functional layer further includes a second carrier functional layer, and the second carrier functional layer is arranged between the first carrier functional layer and the bottom electrode or between the first carrier functional layer and the top electrode. When the optoelectronic device 10 is a light-emitting device, continue to refer to Figure 2 and Figure 3 The second carrier functional layer 1033 is disposed between the light emitting layer 1032 and the bottom electrode 101 or between the light emitting layer 1032 and the top electrode 102. One of the first carrier functional layer 1031 and the second carrier functional layer 1033 is an electron functional layer, and the other is a hole functional layer. The materials of the electron functional layer and the hole functional layer can refer to the above description.

[0097] It can be understood that when the first carrier functional layer 1031 is an electronic functional layer and the optoelectronic device 10 is an upright structure, the second carrier functional layer 1033 is a hole functional layer, and the second carrier functional layer 1033 is disposed between the light-emitting layer 1032 and the bottom electrode 101; when the first carrier functional layer 1031 is an electronic functional layer and the optoelectronic device 10 is an inverted structure, the second carrier functional layer 1033 is a hole functional layer, and the second carrier functional layer 1033 is disposed between the light-emitting layer 1032 and the bottom electrode 101. 032 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is an upright structure, the second carrier functional layer 1033 is an electron functional layer, and the second carrier functional layer 1033 is arranged between the light-emitting layer 1032 and the top electrode 102; when the first carrier functional layer 1031 is a hole functional layer and the optoelectronic device 10 is an inverted structure, the second carrier functional layer 1033 is arranged between the light-emitting layer 1032 and the bottom electrode 101.

[0098] In addition, the electronic functional layer can be a single-layer structure or a multi-layer structure. The electronic functional layer, for example, includes one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode than the hole blocking layer.

[0099] The hole functional layer can be a single layer structure or a multilayer structure. The hole functional layer includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer including the hole injection layer, the hole transport layer, and the electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode than the electron blocking layer.

[0100] The embodiment of the present application also provides an electronic device, the electronic device includes an optoelectronic device prepared by any of the methods for preparing an optoelectronic device described in the foregoing, or the electronic device includes any of the optoelectronic devices described in the foregoing. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smart phone, a tablet computer, a laptop computer, a digital camera, a digital video camera, a smart wearable device, a smart weighing electronic scale, a car display, a television or an e-book reader, wherein the smart wearable device can be, for example, a smart bracelet, a smart watch, a virtual reality (VR) helmet, etc.

[0101] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0102] Example 1

[0103] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device is a quantum dot light emitting diode of an upright structure, such as Figure 4 As shown, in the direction from bottom to top, the photoelectric device 10 includes a substrate 104, a bottom electrode 101, a functional layer 103 and a top electrode 102 which are stacked in sequence, wherein the bottom electrode 101 is an anode and the top electrode 102 is a cathode; in the direction from bottom to top, the functional layer 103 includes a second carrier functional layer 1033, a light-emitting layer 1032 and a first carrier functional layer 1031 which are stacked in sequence, wherein the second carrier functional layer 1033 is a hole functional layer, and the second carrier functional layer 1033 is composed of a hole injection layer 10331 and a hole transport layer 10332 which are stacked, the hole injection layer 10331 is closer to the bottom electrode 101 than the hole transport layer 10332, and the first carrier functional layer 1031 is an electron functional layer.

[0104] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0105] The material of the substrate 104 is glass, and the thickness of the substrate 104 is 2 mm;

[0106] The material of the bottom electrode 101 is ITO, and the thickness of the anode 11 is 20 nm;

[0107] The material of the top electrode 102 is Ag, and the thickness of the cathode 12 is 20 nm;

[0108] The material of the light emitting layer 1032 is Cd 0.1 Zn 0.9 Se / ZnSe quantum dots, luminescent color is blue, thickness is 20nm;

[0109] The material of the hole injection layer 10331 is PEDOT:PSS, and the thickness of the hole injection layer 10331 is 30 nm;

[0110] The material of the hole transport layer 10332 is TFB, and the thickness of the hole transport layer 10332 is 30 nm;

[0111] The material of the first carrier functional layer 1031 includes nano ZnO (with an average particle size of 5 nm), and the thickness of the first carrier functional layer 1031 is 30 nm.

[0112] The method for preparing the optoelectronic device in this embodiment comprises the following steps:

[0113] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, acetone for 15 minutes, ethanol for 15 minutes, and isopropanol for 15 minutes, and then dry and perform ultraviolet-ozone surface treatment for 15 minutes to obtain a substrate including a bottom electrode;

[0114] S1.2, in an air environment at room temperature and pressure, spin-coating a PEDOT:PSS aqueous solution (the mass percentage of PEDOT:PSS is 20%) on the side of the bottom electrode away from the substrate, and then subjecting the solution to a constant temperature heat treatment at 150°C to solidify the film to obtain a hole injection layer;

[0115] S1.3, in a nitrogen environment at room temperature and pressure, spin-coat a TFB-chlorobenzene solution with a concentration of 8 mg / mL on the side of the hole injection layer away from the anode, and then place it at 170°C for constant temperature heat treatment to solidify the film to obtain a hole transport layer;

[0116] S1.4. In a nitrogen environment at room temperature and pressure, spin-coat a CdO2 solution with a concentration of 20 mg / mL on the side of the hole transport layer away from the hole injection layer. 0.1 Zn 0.9 Se / ZnSe quantum dots-n-octane solution was then placed in 10 -2 MPa environment for 15 min to obtain a luminescent layer;

[0117] S1.5. In a nitrogen environment at room temperature and pressure, a 30 mg / mL nano ZnO-ethanol solution was spin-coated on the side of the light-emitting layer away from the hole transport layer, and then placed in a 10 -2 MPa environment for 15 min to obtain a film layer;

[0118] S1.6. Post-treat the film layer obtained in step S1.5, the post-treating comprising intermittent gas dielectric discharge breakdown treatment, continuous solvent annealing treatment and continuous microwave irradiation treatment, the gas dielectric discharge breakdown treatment comprising a first gas dielectric discharge breakdown sub-treatment and a second gas dielectric discharge breakdown sub-treatment, the first gas dielectric discharge breakdown sub-treatment and the second gas dielectric discharge breakdown sub-treatment being separated by 2s, the starting time point of the post-treating, the starting time point of the first gas dielectric discharge breakdown sub-treatment, the starting time point of the solvent annealing treatment and the starting time point of the microwave irradiation treatment are all the same, the ending time point of the first gas dielectric discharge breakdown sub-treatment and the ending time point of the solvent annealing treatment are the same, the ending time point of the second gas dielectric discharge breakdown sub-treatment, the ending time point of the microwave irradiation treatment and the ending time point of the post-treating are all the same; wherein, the process parameters of the microwave irradiation treatment are: the microwave frequency is 2.45GHz, the microwave The wave power is 100W; the total time of the first gas dielectric discharge breakdown treatment and the total time of the solvent annealing treatment are 5min respectively, and the process of the first gas dielectric discharge breakdown treatment and the solvent annealing treatment includes: placing the film layer in a gas atmosphere composed of ethanol vapor and nitrogen (the volume percentage of ethanol vapor is 98%, the volume percentage of nitrogen is 2%, and the temperature is 50°C) to simultaneously perform the first gas dielectric discharge breakdown treatment (the gas medium is nitrogen) and the solvent annealing treatment, the gas pressure is 18KPa, the discharge voltage of the first gas dielectric discharge breakdown treatment is 2kV, and the discharge frequency of the first gas dielectric discharge breakdown treatment is 0.1Hz; the discharge voltage of the second gas dielectric discharge breakdown treatment is 7kV, the discharge frequency of the second gas dielectric discharge breakdown treatment is 0.1Hz, the total time of the second gas dielectric discharge breakdown treatment is 100s, and the total time of the post-treatment is 402s, so as to obtain the first carrier functional layer;

[0119] S1.7, place the prefabricated device containing the electronic functional layer in a gas pressure of 4×10 -6 In the mbar evaporation chamber, Ag is thermally evaporated on the side of the electron transport layer away from the light-emitting layer through a mask plate to obtain a top electrode, which is then encapsulated using epoxy resin glue and cover glass to obtain a photoelectric device.

[0120] Example 2

[0121] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is different only in that the preparation method of the first carrier functional layer is different, but the thickness of the first carrier functional layer is the same.

[0122] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "post-processing the film layer obtained in step S1.5, the post-processing includes a gas dielectric discharge breakdown treatment performed continuously and a solvent annealing treatment performed continuously, the starting time point of the gas dielectric discharge breakdown treatment, the starting time point of the solvent annealing treatment and the starting time point of the post-processing are all the same, and the ending time point of the gas dielectric discharge breakdown treatment, the ending time point of the solvent annealing treatment and the ending time point of the post-processing are all the same; wherein, the gas dielectric discharge breakdown treatment, the ending time point of the solvent annealing treatment and the ending time point of the post-processing are all the same; The process of the discharge breakdown treatment and the solvent annealing treatment includes: placing the film layer in a gas atmosphere composed of ethanol vapor and nitrogen (the volume percentage of ethanol vapor is 98%, the volume percentage of nitrogen is 2%, and the temperature is 50°C) to simultaneously perform a gas dielectric discharge breakdown treatment and a solvent annealing treatment, the gas pressure is 18KPa, the discharge voltage of the gas dielectric discharge breakdown treatment is 5kV, and the discharge frequency of the gas dielectric discharge breakdown treatment is 0.1Hz; the total time of the gas dielectric discharge breakdown treatment, the total time of the solvent annealing treatment and the total time of the post-treatment are all 300s, and the first carrier functional layer is obtained.

[0123] Example 3

[0124] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is different only in that the preparation method of the first carrier functional layer is different, but the thickness of the first carrier functional layer is the same.

[0125] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "post-processing the film layer prepared in step S1.5, the post-processing includes intermittent gas dielectric discharge breakdown treatment and continuous solvent annealing treatment, the gas dielectric discharge breakdown treatment includes a first gas dielectric discharge breakdown sub-treatment and a second gas dielectric discharge breakdown sub-treatment, the first gas dielectric discharge breakdown sub-treatment and the second gas dielectric discharge breakdown sub-treatment are separated by 2s, the starting time point of the post-processing, the starting time point of the first gas dielectric discharge breakdown sub-treatment and the starting time point of the solvent annealing treatment, the ending time point of the first gas dielectric discharge breakdown sub-treatment and the ending time point of the solvent annealing treatment are the same, and the ending time point of the second gas dielectric discharge breakdown sub-treatment and the ending time point of the post-processing are the same; the first gas dielectric discharge breakdown sub-treatment The total time of the breakdown treatment and the total time of the solvent annealing treatment are 5 minutes respectively. The process of the first gas dielectric discharge breakdown treatment and the solvent annealing treatment includes: placing the film layer in a gas atmosphere composed of ethanol vapor and nitrogen (the volume percentage of ethanol vapor is 98%, the volume percentage of nitrogen is 2%, and the temperature is 50°C) to simultaneously perform the first gas dielectric discharge breakdown treatment (the gas medium is nitrogen) and the solvent annealing treatment, the gas pressure is 18KPa, the discharge voltage of the first gas dielectric discharge breakdown treatment is 5kV, and the discharge frequency of the first gas dielectric discharge breakdown treatment is 0.1Hz; the discharge voltage of the second gas dielectric discharge breakdown treatment is 20kV, the discharge frequency of the second gas dielectric discharge breakdown treatment is 0.1Hz, the total time of the second gas dielectric discharge breakdown treatment is 100s, the total time of the post-treatment and the total time of the microwave irradiation treatment are both 402s, and the first carrier functional layer is obtained.

[0126] Example 4

[0127] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is different only in that the preparation method of the first carrier functional layer is different, but the thickness of the first carrier functional layer is the same.

[0128] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that: step S1.6 is replaced by "post-processing the film layer prepared in step S1.5, the post-processing includes a gas dielectric discharge breakdown treatment performed continuously, a solvent annealing treatment performed continuously, and a microwave irradiation treatment performed continuously, and the solvent annealing treatment process is performed before the gas dielectric discharge breakdown treatment process, the starting time point of the solvent annealing treatment is the same as the starting time point of the post-processing, the starting time point of the gas dielectric discharge breakdown treatment is the same as the starting time point of the microwave irradiation treatment, and the ending time point of the gas dielectric discharge breakdown treatment and the ending time point of the microwave irradiation treatment are the same. The specific process is as follows: the film layer obtained in step S1.5 is placed in a gas atmosphere composed of ethanol vapor and nitrogen (the volume percentage of ethanol vapor is 98%, the volume percentage of nitrogen is 2%, and the temperature is 50°C) for solvent annealing for 5 minutes, and the gas pressure is 18KPa; then, the film layer that has completed the solvent annealing treatment is simultaneously subjected to gas dielectric discharge breakdown treatment (the gas dielectric is nitrogen) and microwave irradiation treatment, the process parameters of the microwave irradiation treatment are the same as those in Example 1, the discharge voltage of the gas dielectric discharge breakdown treatment is 7kV, and the time of the microwave irradiation treatment and the time of the gas dielectric discharge breakdown treatment are both 300s, to obtain the first carrier functional layer".

[0129] Example 5

[0130] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device is a quantum dot light emitting diode with an inverted structure, such as Figure 5 As shown, in the direction from bottom to top, the photoelectric device 10 includes a substrate 104, a bottom electrode 101, a functional layer 103 and a top electrode 102 which are stacked in sequence, wherein the bottom electrode 101 is a cathode and the top electrode 102 is an anode; in the direction from bottom to top, the functional layer 103 includes a second carrier functional layer 1033, a light-emitting layer 1032 and a first carrier functional layer 1031 which are stacked in sequence, wherein the second carrier functional layer 1033 is an electron functional layer, the first carrier functional layer 1031 is a hole functional layer, and the first carrier functional layer 1031 is composed of a hole injection layer 10331 and a hole transport layer 10332 which are stacked, and the hole injection layer 10331 is closer to the top electrode 102 than the hole transport layer 10332.

[0131] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0132] The material of the substrate 104 is glass, and the thickness of the substrate 104 is 2 mm;

[0133] The material of the bottom electrode 101 is ITO, and the thickness of the anode 11 is 20 nm;

[0134] The material of the top electrode 102 is Ag, and the thickness of the cathode 12 is 20 nm;

[0135] The material of the light emitting layer 1032 is Cd 0.1 Zn 0.9 Se / ZnSe quantum dots, luminescent color is blue, thickness is 20nm;

[0136] The material of the hole injection layer 10331 is PEDOT:PSS, and the thickness of the hole injection layer 10331 is 30 nm;

[0137] The material of the hole transport layer 10332 includes NiO (average particle size is 5 nm), and the thickness of the hole transport layer 10332 is 30 nm;

[0138] The material of the second carrier functional layer 1033 is nano ZnO (with an average particle size of 5 nm), and the thickness of the second carrier functional layer 1033 is 30 nm.

[0139] The method for preparing the optoelectronic device in this embodiment comprises the following steps:

[0140] S5.1, refer to step S1.1;

[0141] S5.2. In a nitrogen environment at room temperature and pressure, a nano ZnO-ethanol solution with a concentration of 30 mg / mL is spin-coated on the side of the bottom electrode away from the substrate, and then subjected to a constant temperature heat treatment at 80° C. to solidify the film to obtain a second carrier functional layer;

[0142] S5.3, in a nitrogen environment at room temperature and pressure, spin-coat a Cd solution with a concentration of 20 mg / mL on the side of the second carrier functional layer away from the bottom electrode. 0.1 Zn 0.9 Se / ZnSe quantum dots-n-octane solution was then placed in 10 -2 MPa environment for 15 min to obtain a luminescent layer;

[0143] S5.4. In a nitrogen environment at room temperature and pressure, a 30 mg / mL nano-NiO-chlorobenzene solution was spin-coated on the side of the light-emitting layer away from the second carrier functional layer, and then placed at 10 -2 MPa environment for 15 min to obtain a film layer;

[0144] S5.5. Post-treat the film layer obtained in step S5.4, the post-treating comprising intermittent gas dielectric discharge breakdown treatment, continuous solvent annealing treatment and continuous microwave irradiation treatment, the gas dielectric discharge breakdown treatment comprising a first gas dielectric discharge breakdown sub-treatment and a second gas dielectric discharge breakdown sub-treatment, the first gas dielectric discharge breakdown sub-treatment and the second gas dielectric discharge breakdown sub-treatment being separated by 2s, the starting time point of the post-treating, the starting time point of the first gas dielectric discharge breakdown sub-treatment, the starting time point of the solvent annealing treatment and the starting time point of the microwave irradiation treatment are all the same, the ending time point of the first gas dielectric discharge breakdown sub-treatment and the ending time point of the solvent annealing treatment are the same, the ending time point of the second gas dielectric discharge breakdown sub-treatment, the ending time point of the microwave irradiation treatment and the ending time point of the post-treating are all the same; wherein, the process parameters of the microwave irradiation treatment are: the microwave frequency is 2.45GHz , the microwave power is 100W; the total time of the first gas dielectric discharge breakdown treatment and the total time of the solvent annealing treatment are 5min respectively, and the process of the first gas dielectric discharge breakdown treatment and the solvent annealing treatment comprises: placing the film layer in a gas atmosphere composed of chlorobenzene vapor and nitrogen (the volume percentage of chlorobenzene vapor is 98%, the volume percentage of nitrogen is 2%, and the temperature is 50°C) to simultaneously perform the first gas dielectric discharge breakdown treatment (the gas medium is nitrogen) and the solvent annealing treatment, the gas pressure is 18KPa, the discharge voltage of the first gas dielectric discharge breakdown treatment is 2kV, and the discharge frequency of the first gas dielectric discharge breakdown treatment is 0.1Hz; the discharge voltage of the second gas dielectric discharge breakdown treatment is 7kV, the discharge frequency of the second gas dielectric discharge breakdown treatment is 0.1Hz, the total time of the second gas dielectric discharge breakdown treatment is 100s, and the total time of the post-treatment is 402s, to obtain a hole transport layer;

[0145] S5.6. In an air environment at room temperature and pressure, a PEDOT:PSS aqueous solution (the mass percentage of PEDOT:PSS is 20%) is spin-coated on the side of the hole transport layer away from the light-emitting layer, and then subjected to a constant temperature heat treatment at 150° C. to solidify the film to obtain a hole injection layer;

[0146] S5.7, place the prefabricated device completed in step S5.6 in an atmosphere of 4×10 -6 In the mbar evaporation chamber, Ag is thermally evaporated on the side of the electron transport layer away from the light-emitting layer through a mask plate to obtain a top electrode, which is then encapsulated using epoxy resin glue and cover glass to obtain a photoelectric device.

[0147] Comparative Example 1

[0148] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the photoelectric device in this comparative example is different only in that the preparation method of the first carrier functional layer is different, but the thickness of the first carrier functional layer is the same.

[0149] Compared with the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this comparative example is different only in that step S1.6 is omitted, and the film layer prepared in step S1.5 is the first carrier functional layer.

[0150] Comparative Example 2

[0151] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the photoelectric device in this comparative example is different only in that the preparation method of the first carrier functional layer is different, but the thickness of the first carrier functional layer is the same.

[0152] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this comparative example is only that: step S1.6 is replaced by "placing the film layer prepared in step S1.5 in a gas atmosphere composed of ethanol vapor and nitrogen (the volume percentage of ethanol vapor is 98%, the volume percentage of nitrogen is 2%, and the temperature is 50°C) for solvent annealing treatment for 30 minutes at a gas pressure of 18 KPa to obtain the first carrier functional layer".

[0153] Comparative Example 3

[0154] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 5, the photoelectric device in this comparative example is different only in that the preparation method of the hole transport layer is different, but the thickness of the hole transport layer is the same.

[0155] Compared with the method for preparing the optoelectronic device in Example 5, the method for preparing the optoelectronic device in this comparative example is different only in that step S5.5 is omitted, and the film layer prepared in step S5.4 is the hole transport layer.

[0156] Comparative Example 4

[0157] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 5, the photoelectric device in this comparative example is different only in that the preparation method of the hole transport layer is different, but the thickness of the hole transport layer is the same.

[0158] Compared with the preparation method of the optoelectronic device in Example 5, the difference in the preparation method of the optoelectronic device in this comparative example is only that: step S5.5 is replaced by "placing the film layer prepared in step S5.4 in a gas atmosphere composed of chlorobenzene vapor and nitrogen (the volume percentage of chlorobenzene vapor is 98%, the volume percentage of nitrogen is 2%, and the temperature is 50°C) for solvent annealing treatment for 30 minutes at a gas pressure of 18 KPa to obtain a hole transport layer."

[0159] Experimental example

[0160] The performance of the optoelectronic devices in Examples 1 to 5 and Comparative Examples 1 to 4 was tested, and the FPD optical property measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley2400, high-precision digital source meter Keithley6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems, etc., was used to build an efficiency test system) to detect and obtain the start-up voltage, current, brightness, luminescence spectrum and other parameters of each light-emitting device, and then calculate and obtain key parameters such as external quantum efficiency and power efficiency, and use a life test equipment to test the device life of each of the above-mentioned optoelectronic devices.

[0161] The current efficiency test method is: set the luminous area to 2mm×2mm=4mm 2 , intermittently collect the brightness value of the light-emitting device in the range of 0V to 8V. The initial voltage value of the brightness is 3V, and the brightness is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the photoelectric device under the collection conditions, and the maximum current efficiency (CE max ,cd / A).

[0162] The device life test method includes the following steps: under the drive of a constant current (2mA), a 128-channel QLED life test system is used to perform electroluminescent life analysis on each light-emitting device, and the time required for each light-emitting device to decay from the maximum brightness to 95% (T95, h) is recorded. The time required for the brightness of each light-emitting device to decay from 100% to 95% at a brightness of 1000nit is calculated by a decay fitting formula (T95@1000nit, h).

[0163] The performance test data of each optoelectronic device at 25°C is shown in Table 1 below:

[0164] Table 1 Summary of performance test data of optoelectronic devices in Examples 1 to 5 and Comparative Examples 1 to 4

[0165]

[0166]

[0167] Please refer to Table 1. For the photoelectric device of the upright structure, the comprehensive performance of the photoelectric devices in Examples 1 to 4 is superior to that of the photoelectric devices in Comparative Examples 1 and 2. Specifically, the photoelectric performance and device life of the photoelectric devices in Examples 1 to 4 are better. Taking the photoelectric device in Example 1 as an example, the L max is the L of the optoelectronic device in Comparative Example 1 max The T95 of the optoelectronic device in Example 1 is 1.4 times that of the optoelectronic device in Comparative Example 1, the T95@1000nit of the optoelectronic device in Example 1 is 1.3 times that of the optoelectronic device in Comparative Example 1, the T95@1000nit of the optoelectronic device in Example 1 is 2.2 times that of the T95@1000nit of the optoelectronic device in Comparative Example 1, and the CE of the optoelectronic device in Example 1 is 1.4 times that of the optoelectronic device in Example 1, the T95@1000nit of the optoelectronic device in Example 1 is 1.3 times that of the T95 max is the CE of the optoelectronic device in Comparative Example 1 max Continuing to refer to Table 1, for the inverted structure photoelectric device, compared with the comprehensive performance of the photoelectric devices in Comparative Examples 3 and 4, the photoelectric performance and device life of the photoelectric device in Example 5 are better.

[0168] It can be seen that, whether it is a light-emitting device of an upright structure or a light-emitting device of an inverted structure, in the preparation process of the optoelectronic device, the first carrier functional layer is prepared by combining the gas dielectric discharge breakdown treatment and the solvent annealing treatment. On the one hand, the advantages of solvent annealing can be fully utilized to avoid high temperature damage to some film layers (such as the light-emitting layer) located below the first carrier functional layer, which is beneficial to improving the thickness uniformity and surface flatness of the first carrier functional layer; on the other hand,

[0169] The adverse effects of solvent annealing on the morphology, structure and performance of the first carrier functional layer are reduced or eliminated by gas dielectric discharge breakdown treatment, thereby improving the photoelectric performance and device life of the optoelectronic device. Therefore, compared with the optoelectronic device in which the first carrier functional layer has not been annealed or the first carrier functional layer has only been solvent annealed, the optoelectronic performance and device life of the optoelectronic device in the embodiment of the present application are better. Furthermore, in the process of gas dielectric discharge breakdown treatment of the film layer, the film layer is simultaneously subjected to microwave irradiation treatment, so that a good device effect can be obtained at a lower discharge voltage.

[0170] The above is a detailed introduction to a method for preparing a photoelectric device, a photoelectric device, and an electronic device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for preparing a photoelectric device, characterized in that: The steps include: providing a bottom electrode, and forming a functional layer on one side of the bottom electrode; and forming a top electrode on a side of the functional layer away from the bottom electrode; Wherein, the functional layer includes a first carrier functional layer, and the preparation method of the first carrier functional layer includes the following steps: providing a film layer, the film layer comprising an inorganic material; and The film layer is post-processed, and the post-processing includes a gas dielectric discharge breakdown treatment and a solvent annealing treatment to obtain the first carrier functional layer.

2. The preparation method according to claim 1, characterized in that: The gas medium used in the gas medium discharge breakdown process comprises one or more of oxygen, nitrogen, argon, ammonia, fluorine, hydrogen, helium, neon, krypton and xenon; and / or The end time point of the solvent annealing treatment is no earlier than the end time point of the gas dielectric discharge breakdown treatment; and / or The solvent annealing treatment comprises the steps of: placing the film layer in a solvent vapor atmosphere for annealing treatment, wherein the solvent vapor is formed by evaporation of a solvent, and the solvent comprises one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds; and / or The thickness of the film layer is 30nm to 60nm; and / or The materials of the bottom electrode and the top electrode are independently selected from one or more of metals, carbon materials and a fifth metal oxide, the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca and Mg, the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide and aluminum-doped magnesium oxide.

3. The preparation method according to claim 2, characterized in that: In the gas dielectric discharge breakdown treatment, the discharge voltage is 1 kV to 30 kV, and / or the discharge frequency is 0.05 Hz to 0.5 Hz, and / or the total time of the gas dielectric discharge breakdown treatment is 30 s to 10 min; and / or In the solvent annealing treatment, the pressure of the solvent vapor atmosphere is 15 KPa to 20 KPa, and / or the temperature of the solvent annealing treatment is 20° C. to 60° C., and / or the total time of the solvent annealing treatment is 2 min to 8 min.

4. The preparation method according to any one of claims 1 to 3, characterized in that: During the post-treatment, the gas dielectric discharge breakdown treatment is performed in a first time period, and the solvent annealing treatment is performed in a second time period, and the first time period and the second time period are any of the following situations: (a) the first time period and the second time period do not overlap at all, and the first time period is before the second time period; (b) The first time period and the second time period at least partially overlap.

5. The preparation method according to claim 4, characterized in that: When the first time period and the second time period are situation (a), the voltage of the gas dielectric discharge breakdown treatment is 15 kV to 30 kV, and / or the total time of the first time period is 30 s to 10 min.

6. The preparation method according to claim 4, characterized in that: When the first time period and the second time period are situation (b), the gas dielectric discharge breakdown process includes a first gas dielectric discharge breakdown sub-process and a second gas dielectric discharge breakdown sub-process that are independent of each other, the first gas dielectric discharge breakdown sub-process is performed in a T1 time period within the first time period, and the second gas dielectric discharge breakdown sub-process is performed in a T2 time period within the first time period; The T1 time period is before the T2 time period, the T1 time period at least partially overlaps with the second time period, and the T2 time period does not overlap with the second time period at all.

7. The preparation method according to claim 6, characterized in that: The voltage of the first gas dielectric discharge breakdown treatment is 2 kV to 10 kV, and the total time of the T1 time period is 2 min to 8 min; and / or The voltage of the second gas dielectric discharge breakdown treatment is 15 kV to 30 kV, and the total time of the T2 time period is 30 s to 200 s.

8. The preparation method according to any one of claims 1 to 3, characterized in that: The post-treatment also includes microwave irradiation treatment. During the post-treatment, the gas dielectric discharge breakdown treatment is performed in a first time period, the solvent annealing treatment is performed in a second time period, and the microwave irradiation treatment is performed in a third time period. The third time period at least partially overlaps with the first time period.

9. The preparation method according to claim 8, characterized in that: The microwave frequency of the microwave irradiation treatment is 2000MHz to 3000MHz, and / or the microwave power of the microwave irradiation treatment is 50W to 500W, and / or the total time of the third time period is 30s to 20min; and / or The end time point of the microwave irradiation treatment, the end time point of the gas dielectric discharge breakdown treatment and the end time point of the post-treatment are the same; and / or The starting time point of the microwave irradiation treatment is the same as the starting time point of the gas dielectric discharge breakdown treatment; and / or In the gas dielectric discharge breakdown process, the discharge voltage is 1 kV to 10 kV; and / or The first time period and the second time period do not overlap at all, and the second time period is before the first time period, or the first time period and the second time period at least partially overlap.

10. The preparation method according to claim 8 or 9, characterized in that: When the first time period and the second time period do not overlap at all and the second time period is before the first time period, the voltage of the gas dielectric discharge breakdown treatment is 5 kV to 10 kV, and / or the total time of the first time period is 30 s to 8 min.

11. The preparation method according to claim 8 or 9, characterized in that: When the first time period and the second time period partially overlap, the gas dielectric discharge breakdown process includes a first gas dielectric discharge breakdown sub-process and a second gas dielectric discharge breakdown sub-process that are independent of each other, the first gas dielectric discharge breakdown sub-process is performed within a T1 time period within the first time period, and the second gas dielectric discharge breakdown sub-process is performed within a T2 time period within the first time period; wherein the T1 time period at least partially overlaps with the second time period, the T2 time period does not overlap with the second time period at all, and the third time period at least covers the T2 time period.

12. The preparation method according to claim 11, characterized in that: The voltage of the second gas dielectric discharge breakdown treatment is 5 kV to 10 kV, and the total time of the T2 time period is 30 s to 200 s; and / or The third time period also covers the T1 time period, the voltage of the first gas dielectric discharge breakdown sub-process is 1 kV to 5 kV, and the total time of the T1 time period is 2 min to 8 min.

13. The preparation method according to claim 1, characterized in that: The providing of the film layer comprises the steps of: depositing a first dispersion comprising an inorganic material; as well as Drying the deposited first dispersion to obtain the film layer; And / or, the inorganic material includes a metal element, and the metal element is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals.

14. The preparation method according to claim 13, characterized in that: The drying process is a vacuum drying process; or the drying process is a heat treatment, and the temperature of the heat treatment is 20° C. to 40° C.; and / or, in the first dispersion, the concentration of the inorganic material is 10 mg / mL to 50 mg / mL; and / or, the dispersant of the first dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds; And / or, the dispersant of the first dispersion is the same as the solvent used in the solvent annealing treatment.

15. The preparation method according to claim 1, characterized in that: The first carrier functional layer is an electronic functional layer, the inorganic material is selected from an undoped first metal oxide and / or a doped second metal oxide, the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or the doped second metal oxide is a first main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn.

16. The preparation method according to claim 15, characterized in that: One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the method for preparing the photoelectric device also includes the steps of: forming a second carrier functional layer between the anode and the first carrier functional layer, wherein the material of the second carrier functional layer includes one or more of an organic compound, a non-doped first inorganic compound, and a doped second inorganic compound; wherein the organic compound is selected from poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexane substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-dioctylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazole-9-yl)triphenylamine, 4,4',4'-tris( 2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di (4-methoxyphenyl)amino] one or more of -9,9'-spirobifluorene; and / or, the non-doped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or, the doped second inorganic compound is a main inorganic compound doped with a second doping element, the main inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

17. The preparation method according to claim 1, characterized in that: The first carrier functional layer is a hole functional layer, the inorganic material is selected from an undoped third metal oxide and / or a doped fourth metal oxide, the undoped third metal oxide is selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO and Cu2O; and / or the doped fourth metal oxide is a second main metal oxide doped with a third doping element, the second main metal oxide is selected from NiO, MoO3, WO3, V2O5, CrO3, CuO or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

18. The preparation method according to claim 17, characterized in that: One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the method for preparing the photoelectric device also includes the steps of: forming a second carrier functional layer between the cathode and the first carrier functional layer, the material of the second carrier functional layer includes an undoped first metal oxide and / or a doped second metal oxide, the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a first main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn.

19. The preparation method according to claim 1, characterized in that: The step of forming a functional layer on one side of the bottom electrode comprises: forming a light-emitting layer between the bottom electrode and the first carrier functional layer or between the first carrier functional layer and the top electrode; Wherein, the material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; the organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials and exciplex light-emitting materials; and / or The quantum dots are selected from one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; the material of the single-component quantum dots, the material of the core of the core-shell quantum dots and the material of the shell of the core-shell quantum dots are independently selected from at least one of II-VI compounds, III-V compounds, IV-VI compounds or I-III-VI compounds, wherein the II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSe S, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, In PAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InA lPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dot is AMX3, wherein A is Cs + ion, M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is selected from an organic amine cation.

20. A photoelectric device, characterized in that: The method is prepared according to any one of claims 1 to 19.

21. An electronic device, characterized in that: The invention comprises a photoelectric device prepared by the preparation method as claimed in any one of claims 1 to 19.

Images