Tank mode gas distribution equipment for photovoltaic manufacturing

Abstract

The invention discloses a trough mode gas distribution device for photovoltaic manufacturing, which comprises a first gas distribution device (105) positioned at a treatment chamber inlet (104) and a second gas distribution device (13) positioned at a treatment chamber outlet (11), and the first gas distribution device (105) is connected with the treatment chamber inlet (104) through a flat quadrangular first communication device (9); and the second gas distribution equipment (13) is connected with the treatment chamber outlet (11) through flat quadrangular third communication equipment (12). The device effectively improves the gas distribution uniformity in the treatment chamber.

Description

Technical Field

[0001] The invention relates to the technical field of photovoltaic thin film preparation, and in particular to a trough mode gas distribution device for photovoltaic manufacturing. Background Art

[0002] In the photovoltaic manufacturing process, there are some key process steps, including gas distribution and high temperature heating, for passivation or formation of certain layers. Figure 1 A general schematic diagram of this type of process is illustrated in .

[0003] These semi-finished solar devices (including substrates, certain photovoltaic layer stacks: top and bottom stacks) to be processed here can be silicon-based or thin-film photovoltaic technologies. It should be noted that the gases mentioned here can be reactive gases or gas mixtures (reactive gases and carrier gases). In the case of Si-PVs, H2S (reactive gas) is used to sulfidize / passivate the n-type Si surface to increase the carrier lifetime at ~600°C; or H2 (reactive gas) and N2 (carrier gas) are used to hydrogenate / passivate the SiOx:Al2O3 contacts of p-type or n-type Si-PVs to improve the charge carrier lifetime at ~400°C; or B2H6 and PH3 (both reactive gases) are used in LPCVD (low pressure chemical vapor deposition) processes to dope the n- or p-Si layers of TOPCon cells. In the case of thin film PVs, H2Se, Cl2 or HCl gases can be used at 400-450°C to passivate CdTe grain boundaries to reduce defects and improve power conversion efficiency; or during PDT (post-deposition treatment), H2S / H2Se can be used to sulfidate / selenide / passivate the CIGS absorber layer at 300-400°C; or during RTP (rapid thermal processing), H2S or H2Se can be used to sulfidate / selenide the CIGS precursor layer at 400-600°C to form the CIGS absorber. Typically, these processes using gases under high temperature heating conditions are carried out in a process chamber of very limited size to minimize the heat and the amount of gas required, thereby saving energy and other costs. For such laterally flat process boxes, it is not easy to homogenize the gas distribution. In large process boxes for mass production, local concentration gradients can be easily induced by introducing gases into the chamber. Furthermore, although the gas is preheated to 100-150°C before the inlet, there will still be a temperature offset between the gas and the continuously heated process chamber, for example up to 400-600°C. This will also lead to local temperature gradients in the process box. Since the process reaction kinetics (sulfurization, selenization, chlorination, hydrogenation, boron or phosphorus doping, etc.) are strongly affected by the concentration and temperature of the reactants (in this case, the reaction gases), a precisely controlled uniform gas distribution in the process box is essential to ensure process reproducibility and uniformity as well as good PV device performance for large-scale production.

[0004] However, in reality, during the above process, the chemical reaction of the top layer (see Figure 1 ) can be very complex and fast. Therefore, improper process box design can easily lead to non-uniform distribution of gases (reactant gases, or gas mixtures of reactant gases and carrier gases) and gas temperatures, which in turn leads to non-uniform surface morphology / roughness, elemental statics or photovoltaic properties of the final photovoltaic device. Examples of selenization / sulfurization process boxes used in some photovoltaic manufacturing include Figure 2 As shown, the Figure 2 The direct correlation between standard inappropriate process box design and uneven gas distribution within the process box is illustrated. In addition to the selenization / sulfurization process, inappropriate process box design can also lead to uneven gas distribution in chlorination, hydrogenation, boron or phosphorus doping, etc. in PV manufacturing.

[0005] exist Figure 2 In the figure, the standard design of the existing selenization / sulfurization treatment box 16 is shown. This type of treatment box 16 is usually composed of a main body frame (high temperature resistant material) having a fixed bottom plate and a non-fixed cover plate (gravity covering mechanism), whereby the gas flows through the substrate 18 (the photovoltaic layer stack on the top) and reacts with its surface. It should be noted that both the cover plate 19 and the bottom plate 17 are made of infrared transparent or emitting materials. The heating of this selenization / sulfurization treatment box 16 is achieved by double-sided thermal radiation of the cover plate 19 and the bottom plate 17. Since the bottom plate 17 is fixed and the cover plate 19 is not fixed, when the treatment chamber 20 is filled with gas, the gas can exist through the top short edge guide side (the gap between the treatment box frame and the cover plate 19), which is represented as the top gas outlet. In this embodiment, gas inlets / outlets are designed on both long edge guide sides of the frame. In practice, there are two methods: 1) gas is filled into the process chamber 20 through the left gas inlet and comes out through the right gas outlet; 2) gas is filled into the process chamber 20 through the left and right gas inlets, and then the top short side front edge is used as the gas outlet by overfilling the chamber 20. For such a narrow gap of the process chamber (height-width / length-ratio exceeds one order of magnitude), it is not easy to evenly distribute the gas therein because the pressure drop along the process chamber is large.

[0006] The standard design of the left inlet part of the existing selenization / sulfurization treatment box gas distribution is as follows Figure 3As shown. The arrows in the figure should indicate the direction of gas flow in the channel before entering the processing chamber 20. The gas is first introduced into the inlet duct inlet 1 and then passes through the inlet duct 2. The gas flow will be further distributed along the gas manifold 3 and flow into multiple tubes 4, and finally leave the left inlet portion from the orifice 5 to enter the processing chamber 20. Generally, the inlet duct inlet 1 is located on the same horizontal plane as the inlet duct 2 and the gas manifold 3. It should be noted that the rows of gas orifices 5 on the two long edge guiding sides are not symmetrically positioned. After leaving the left inlet portion, the gas enters the processing chamber 20 and reacts with the photovoltaic layer stack on the substrate 18.

[0007] It should be noted that the dimensions of the gas outlet portion are designed to be a mirror image of the gas inlet portion.

[0008] Figure 4 a) shows the gas flow lines in the processing chamber 20 based on numerical simulation, and Figure 4 b) shows an optical scan of the top layer of the relevant PV layer stack after selenization / sulfurization for comparison using the same process conditions. For the simulation setup, a certain gas flow rate was applied to the process box, 60% at the left inlet and 40% at the right inlet. Thus, the top of the process box was set as the gas outlet and the remaining boundaries were set as normal walls. All of this should reflect the actual selenization / sulfurization production conditions to some extent. Figure 4 Highlighted in the dashed box in a). Regarding the gas streamline distribution shown here, many "finger" shaped gas jets (brighter areas) are observed from the two long side leading edges. Interestingly, most of them are very closely related to the location of the gas orifice 5. Some of these gas jets form large vortices. Finally, the gas flow flows along a sinusoidal line (middle) towards the gas outlet at the top short leading edge. Compare Figure 4 a) and Figure 4 b), according to the scanned images, there is a strong correlation between the simulated airflow and the effect of selenization / sulfurization on the surface of the PV layer. In this way, we can somehow verify our simulation. Assuming that the darker areas of the PV layer ( Figure 4 (b)) indicates a higher surface roughness, while the brighter areas (finger-shaped gas injection) are less rough, because a smoother surface reflects more light. The process chamber 20 is usually preheated by an IR emitter before the gas injection. The typical "cooler" temperature of the gas before entering the process chamber is 100-150°C. Therefore, the uneven injection of the cooler gas may have an effect on the top layer of the relevant photovoltaic layer, so that during the selenization growth process, the layer surface has locally smaller grains due to less thermal energy. This means that the gas injection area in a standard process box (see Figure 4) can show in optical scans that the top surface of the relevant photovoltaic layer is smoother and brighter. In addition, dark areas indicate higher temperatures, which may lead to more defects locally forming in the device, which is associated with a reduction in power conversion efficiency.

[0009] Uneven gas distribution affects not only the performance of photovoltaic devices, but also the optical appearance of the final photovoltaic product, such as fingers, vortices, etc. They are not suitable for BIPV facade applications. These panels must be scrapped, so that the yield will decrease and the cost / price of the product will increase.

[0010] Therefore, it is necessary to improve the gas distribution in the relevant process box to obtain better electrical and aesthetic performance of photovoltaic modules.

[0011] In the prior art, some methods of designing a transmission pipe 4 with a larger diameter or an enlarged orifice to solve the problem of uneven gas distribution in the processing box. Figure 5 a), b) and c) show the standard design and two modified designs of the inlet section of the process box, respectively. Figure 5 b) and c), the pipe 4 consists of two parts: the left half adopts the same pipe design as the standard design ( Figure 3 b), Figure 5 a), the right half is extended with a "bowl" shaped hole 10, which expands the gas injection from the hole 5 to the processing chamber 20. Figure 5 The tubes in (b) and (c) retain different diameters.

[0012] It should be noted that the design of the air outlet section of the processing box is a mirror image and inverted with the air inlet section of the processing box.

[0013] Figure 6 Shows Figure 5 b) and c) Gas streamlines of the two improved designs, where the gas is ejected from the left inlet and leaves the area from the right outlet. For the simulation settings, the top and remaining boundaries of the process box are set as normal walls, i.e., there is no gas outlet. The remaining boundary conditions remain the same as Figure 4 Same. It can be seen that on the right side, the gas streamlines become more parallel toward the right gas outlet. The modified design seems to improve the gas distribution inside the process box to some extent. However, there are still "finger"-shaped gas jets and vortices, so that the uneven gas flow will lead to uneven distribution of gas and temperature fields. Therefore, it will affect the device performance and optical appearance of the final photovoltaic product.

[0014] In summary, the improved process box with expanded air holes can slightly improve the gas distribution, but it does not completely solve the problem. There is still a need to improve the process box design to achieve more uniform gas distribution. Summary of the invention

[0015] In view of the above problems existing in the prior art, the present invention provides a trough-mode gas distribution device for photovoltaic manufacturing, which effectively improves the uniformity of gas distribution in the processing chamber.

[0016] The present invention provides a trough-mode gas distribution device for photovoltaic manufacturing, comprising a first gas distribution device located at the inlet of a processing chamber, wherein the first gas distribution device has a first inlet and a first outlet, wherein the first inlet is connected to an air inlet pipeline, and the first outlet is connected to the inlet of the processing chamber;

[0017] The first outlet is connected to the processing chamber entrance through a first connecting device, and the first connecting device is a flat quadrangular prism-shaped cavity box, and the two opposite sides of the cavity box are uncovered and the two uncovered sides serve as an entrance and an exit respectively, and the first outlet, the first connecting device entrance, the first connecting device exit, and the processing chamber entrance are consistent in shape and size; wherein, the length of the cavity box>width>height and the two uncovered sides of the cavity box are parallel to the height direction of the cavity box, that is, the cavity box entrance is long and narrow.

[0018] It can be understood that the gas passes through the air intake pipe inlet, the air intake pipe, the air intake pipe outlet, the first gas distribution device inlet (i.e., the first inlet), the first gas distribution device, the first gas distribution device outlet (i.e., the first outlet), the first connecting device inlet (i.e., the cavity box inlet), the first connecting device, the first connecting device outlet (i.e., the cavity box outlet), the processing chamber inlet in sequence, and then is transmitted to the processing chamber.

[0019] In the embodiment of the present application, "the length of the cavity box>the width>the height, and the two uncovered sides of the cavity box are parallel to the height direction of the cavity box", that is, the length of the cavity box inlet / outlet is consistent with the length of the cavity box, and the width of the cavity box inlet / outlet is consistent with the height of the cavity box, that is, the cavity box inlet is long and narrow, and further, since "the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are consistent in shape and size", that is, the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber entrance are all long and narrow and their shape and size are consistent with the uncovered side of the cavity box.

[0020] In the embodiment of the present application, the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are all narrow and long and have the same size and shape, which improves the uniformity of gas distribution in the processing chamber.

[0021] In some preferred embodiments, the ratio between the length, width and height of the flat quadrangular prism-shaped cavity box is between 5000:20:1 and 20000:100:1.

[0022] In some preferred embodiments, the first gas distribution device comprises a first gas distribution pipeline,

[0023] The first inlet is arranged at the top of the first gas distribution pipeline so that the flow direction of the gas through the first inlet is perpendicular to the bottom surface of the first gas distribution pipeline, and the top of the first gas distribution pipeline is the highest position of the first gas distribution pipeline from the ground;

[0024] The first outlet is located at a position lower than the first inlet.

[0025] In the embodiment of the present application, the first inlet is arranged at the top of the first gas distribution pipeline so that the flow direction of the gas through the first inlet is perpendicular to the bottom surface of the first gas distribution pipeline, so that after the gas flows into the first gas distribution pipeline from the top, the gas flows to the bottom surface of the first gas distribution pipeline and then rises along the side surface connected to the bottom surface until it flows out from the first outlet. "The first outlet is located lower than the first inlet" means "the height of the first outlet from the ground is lower than the height of the first inlet from the ground".

[0026] In some preferred embodiments, the first inlet is disposed at the top center of the first gas distribution conduit.

[0027] In an embodiment of the present application, the first inlet is arranged at the center of the top surface of the first gas distribution pipeline, so that the gas flows from the first inlet into the middle of the first gas distribution pipeline and then the gas is redistributed, so that the gas is distributed inside the entire first gas distribution pipeline, thereby improving the uniformity of the gas in the first gas distribution pipeline.

[0028] In some preferred embodiments, the first outlet is long and narrow, and is arranged along the length direction of the first gas distribution pipeline and the length of the first outlet is consistent with the length of the first gas distribution pipeline, that is, the length of the first gas distribution pipeline is consistent with the length of the first connecting device.

[0029] In the embodiment of the present application, the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are all long and narrow, and the lengths of the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are consistent with the length of the first gas distribution pipeline (that is, the length of the first gas distribution pipeline is consistent with the length of the first connecting device (cavity box)). After the gas is evenly distributed in the first gas distribution pipeline, it flows out through the first outlet consistent with the length of the first gas distribution pipeline. During the entire flow process of the gas from the first gas distribution device to the first connecting device (that is, the cavity box) and then to the processing chamber inlet, the area size and shape of the flow cross-section of the gas flow remain consistent, thereby further improving the distribution uniformity of the gas after reaching the processing chamber.

[0030] In some preferred embodiments, the height direction of the cavity box is perpendicular to the ground, so that the height of the cavity box inlet and the cavity box outlet are consistent from the ground, that is, the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are consistent from the ground.

[0031] In the embodiment of the present application, "the height direction of the first connecting device (i.e., the cavity box) is perpendicular to the ground" means "the plane formed by the length and width of the first connecting device (i.e., the cavity box) is parallel to the ground", that is, the first connecting device (i.e., the cavity box) is parallel to the ground, and the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are at the same height from the ground, so that during the process of gas being transmitted from the air intake pipe to the processing chamber, the height of the flow cross-section of the airflow is always kept consistent, thereby improving the stability of the gas distribution during the flow process.

[0032] In short, the height (i.e., the height from the ground), size, and shape of the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are consistent, so that before the gas enters the processing chamber, after the gas is evenly distributed through the first gas distribution pipeline, the area size, shape, and height of the flow cross-section of the gas flow remain consistent during the transmission process through the first outlet, the first connecting device, and the processing chamber inlet, effectively ensuring the uniformity of the distribution of the gas entering the processing chamber.

[0033] In some preferred embodiments, the first gas distribution device includes m first gas distribution pipelines, m is greater than or equal to 2, the m first gas distribution pipelines are connected in sequence, and two adjacent first gas distribution pipelines are connected through a second connecting device to achieve multiple gas distribution processes, and the structure of the second connecting device is the same as that of the first connecting device;

[0034] The first inlet is arranged on the first gas distribution pipeline at the starting end, and the first outlet is arranged on the first gas distribution pipeline at the tail end.

[0035] It can be understood that the second connecting device is structurally identical to the first connecting device, and it can be understood that the second connecting device is a replica of the first connecting device. In addition, it has been stated above that "the height direction of the first connecting device (i.e., the cavity box) is perpendicular to the ground." It should be noted here that: the second connecting device is the same as the first connecting device, i.e., the height direction of the second connecting device is perpendicular to the ground, i.e., the height of the cavity box inlet and the cavity box outlet of the second connecting device are at the same height from the ground; it can be understood that two adjacent first gas distribution pipelines are connected through the second connecting device, and then at the connection between the first gas distribution pipeline and the second connecting device, a gas circulation hole with the same height (height from the ground), size and shape as the inlet / outlet of the second connecting device is opened on the first gas distribution pipeline.

[0036] In the embodiment of the present application, multiple first gas distribution pipelines are connected in sequence to realize multiple uniform distribution processes of gas, thereby improving the uniformity of gas entering the processing chamber. It can be understood that the first inlet is arranged on the top surface of the first gas distribution pipeline at the starting end, the inlet of the first gas distribution pipeline at the starting end is the first inlet, and the outlet of the first gas distribution pipeline at the starting end is the above-mentioned gas flow hole. Except for one first gas distribution pipeline at the starting end, each of the other first gas distribution pipelines is provided with two above-mentioned gas flow holes (one is used as an air inlet and the other is used as an air outlet), and the air outlet of the first gas distribution pipeline at the end end is the first outlet of the first gas distribution device. It can be understood that the height (height from the ground), size and shape of all the gas flow holes are consistent with the height (height from the ground), size and shape of the above-mentioned first outlet, second connecting device inlet (i.e., cavity box inlet), second connecting device outlet (i.e., cavity box outlet) and processing chamber inlet, so that before the gas enters the processing chamber, it passes through the first gas distribution pipeline to achieve multiple gas uniform distribution, and the area size, shape and height of the flow cross-section of the gas flow during the transmission process through the second connecting device, the first outlet, the first connecting device and the processing chamber inlet are always consistent.

[0037] In some preferred embodiments, the first gas distribution pipe is semi-cylindrical or rectangular.

[0038] In some preferred embodiments, when the first gas distribution pipe is semi-cylindrical,

[0039] The rectangular plane of the semi-cylindrical pipe is located below the curved surface of the semi-cylindrical pipe, and the rectangular plane of the semi-cylindrical pipe is parallel to the ground;

[0040] The first inlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the first inlet from the rectangular plane of the semi-cylindrical pipe is the radius of the semi-cylindrical pipe. This design makes the flow direction of the gas when passing through the first inlet perpendicular to the rectangular plane of the semi-cylindrical pipe, and "the height of the first inlet from the rectangular plane of the semi-cylindrical pipe is the radius of the semi-cylindrical pipe" means that the gas flows in from the highest point of the semi-cylindrical pipe from the ground, and at the same time, the gas is evenly distributed in the semi-cylindrical pipe and flows out from the first outlet at a lower position.

[0041] This design allows the gas to pass through the first inlet in a direction perpendicular to the rectangular plane of the semi-cylindrical pipe, fall to the rectangular plane of the semi-cylindrical pipe below, and then rise along the curved surface of the semi-cylindrical pipe, thereby achieving gas distribution in the semi-cylindrical pipe.

[0042] The rectangular plane of the semi-cylindrical pipeline is located below the curved surface of the semi-cylindrical pipeline, and the rectangular plane of the semi-cylindrical pipeline is parallel to the ground, so that the first gas distribution pipeline is stable and not prone to vibration.

[0043] In some preferred embodiments, the first inlet is disposed at the center of the curved surface of the semi-cylindrical pipe.

[0044] In an embodiment of the present application, the gas flows from the first inlet into the middle of the first gas distribution pipe and then is redistributed. The gas simultaneously flows and diffuses in the direction of the semicircular cross-section of the semi-cylindrical pipe and in the direction of the pipe length, so that the gas is distributed inside the entire semi-cylindrical pipe, thereby improving the uniformity of the gas in the semi-cylindrical pipe.

[0045] In some preferred embodiments, the first outlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the first outlet from the rectangular plane of the semi-cylindrical pipe is less than the radius of the semi-cylindrical manifold. The distance between the two semi-circular planes of the semi-cylindrical pipe is the length of the semi-cylindrical pipe, and the first outlet is arranged along the length direction of the semi-cylindrical pipe.

[0046] In the embodiment of the present application, the height of the first outlet from the ground is lower than that of the first inlet. As can be seen from the above, "the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are all long and narrow and their shape and size are consistent with the uncovered side of the cavity box". In the embodiment of the present application, the length of the first outlet is consistent with the length of the semi-cylindrical pipe, that is, the length of the semi-cylindrical pipe and the first connecting device (that is, the cavity box) are consistent.

[0047] In some preferred embodiments, the plurality of first gas distribution pipes have the same size.

[0048] In some preferred embodiments, the sizes of the plurality of first gas distribution pipes are different.

[0049] In some preferred embodiments, the slot mode gas distribution device further comprises a second gas distribution device located at the outlet of the process chamber, the second gas distribution device having a second inlet and a second outlet, the outlet of the process chamber being connected to the second inlet, and the second outlet being connected to a gas outlet pipeline;

[0050] The outlet and the second inlet of the processing chamber are connected via a third connecting device, and the third connecting device has the same structure as the first connecting device.

[0051] In the embodiment of the present application, the slot mode gas distribution device further includes a second gas distribution device located at the outlet of the processing chamber, and the concept of the second gas distribution device is similar to that of the first gas distribution device described above;

[0052] Specifically, after the photovoltaic device is processed in the processing chamber, the gas flows out from the outlet of the processing chamber and flows to the second gas distribution device through the third connecting device.

[0053] It can be understood that the third connecting device is structurally identical to the first connecting device, and it can be understood that the third connecting device is a replica of the first connecting device. It has been explained above that the two opposite sides of the cavity box of the third connecting device parallel to the height direction are uncovered as the entrance and exit of the third connecting device, that is, the processing chamber outlet, the cavity box entrance / exit of the third connecting device, and the second entrance are all long and narrow and their shape and size are consistent with the uncovered side of the cavity box; that is, the length of the processing chamber outlet, the cavity box entrance / exit of the third connecting device, and the second entrance is consistent with the length of the cavity box, and the width of the processing chamber outlet, the cavity box entrance / exit of the third connecting device, and the second entrance is consistent with the height of the cavity box.

[0054] The gas flowing out of the outlet of the processing chamber flows through the inlet of the third connecting device, the third connecting device, the outlet of the third connecting device, the second inlet, the second gas distribution device, the second outlet, and the gas outlet pipe in sequence; the area size and shape of the air flow cross-section of the gas flowing out of the outlet of the processing chamber are the same during the entire flow process.

[0055] In addition, it has been explained above that "the height direction of the first connecting device (i.e., the cavity box) is perpendicular to the ground", and it should be explained here that: the height direction of the third connecting device is also perpendicular to the ground, that is, the height of the cavity box inlet and the cavity box outlet of the third connecting device are consistent from the ground. From the above, it can be seen that the height (height from the ground), size and shape of the processing chamber outlet, the third connecting device inlet, the third connecting device outlet, and the second inlet are consistent, that is, the height of the gas flow cross section of the gas flowing out of the processing chamber outlet is the same during the entire flow process.

[0056] In some preferred embodiments, the second gas distribution device comprises a second gas distribution pipeline,

[0057] The second outlet is arranged at the top of the second gas distribution pipeline so that the flow direction of the gas flowing out of the second outlet is perpendicular to the bottom surface of the second gas distribution pipeline, the second inlet is located lower than the second outlet, and the top of the second gas distribution pipeline is the highest position of the second gas distribution pipeline from the ground;

[0058] The second inlet is long and narrow, and is arranged along the length direction of the second gas distribution pipeline. The length of the second inlet is consistent with the length of the second gas distribution pipeline, that is, the length of the second gas distribution pipeline is consistent with the length of the third connecting device.

[0059] In an embodiment of the present application, the second gas distribution device includes a second gas distribution pipeline, a second inlet is arranged on the gas distribution pipeline and the position of the second inlet is lower than the second outlet; the second outlet is arranged at the top of the gas distribution pipeline to enable the gas in the processing chamber to flow through the second inlet at a lower position into the second gas distribution pipeline, and the gas is evenly distributed in the second gas distribution pipeline.

[0060] It can be understood that the second gas distribution pipeline has the same function as the first gas distribution pipeline, both of which are for gas redistribution. Here, the first and the second are only used to distinguish whether the first gas distribution pipeline is a device at the inlet of the processing chamber or the second gas distribution pipeline is a device at the outlet of the processing chamber. The second gas distribution pipeline and the first gas distribution pipeline may be consistent in shape and size or inconsistent.

[0061] It can be understood that the position and structural setting of the first inlet are the same as the position and structural setting of the second outlet, and the position and structural setting of the first outlet are the same as the position and structural setting of the second inlet; furthermore, the height (i.e., the height from the ground), size, and shape of the processing chamber outlet, the third connecting device inlet / outlet (i.e., the cavity box inlet / outlet), the cavity box inlet, and the second inlet are consistent.

[0062] "The second inlet is arranged along the length direction of the second gas distribution pipeline and the length of the second inlet is consistent with the length of the second gas distribution pipeline" means that the lengths of the processing chamber outlet, the cavity box inlet, the cavity box outlet, and the second inlet are all consistent with the length of the gas distribution pipeline. Furthermore, the length of the gas distribution pipeline of the second gas distribution device is consistent with the length of the cavity box of the third connecting device.

[0063] In some preferred embodiments, the height of the second entrance is greater than the height of the first exit. It should be noted that, it has been described above that the heights of the first exit, the first connecting device entrance, the first connecting device exit, and the processing chamber entrance (i.e., the height from the ground) are consistent, and it has been described above that the processing chamber exit, the third connecting device entrance / exit (i.e., the cavity box entrance / exit), the cavity box entrance, and the second entrance are consistent in height (i.e., the height from the ground), then "the height of the second entrance is greater than the height of the first exit" means that the height of the processing chamber entrance is higher than the height of the processing chamber exit.

[0064] In some preferred embodiments, the second gas distribution device comprises a second gas distribution pipeline; the second gas distribution pipeline is semi-cylindrical or rectangular.

[0065] In some preferred embodiments, when the second gas distribution pipe is semi-cylindrical,

[0066] The rectangular plane of the semi-cylindrical pipe of the second gas distribution pipe is located below the curved surface of the semi-cylindrical pipe, and the rectangular plane of the semi-cylindrical pipe of the second gas distribution device is parallel to the ground;

[0067] The second inlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the second inlet from the rectangular plane of the semi-cylindrical pipe is less than the radius of the semi-cylindrical pipe;

[0068] The second outlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the second outlet from the rectangular plane of the semi-cylindrical pipe is the radius of the semi-cylindrical pipe.

[0069] That is, the second outlet is arranged at the highest point of the curved surface of the semi-cylindrical pipe, and the second outlet is located higher than the second inlet.

[0070] In some preferred embodiments, the air inlet pipe and the air outlet pipe are bent pipes. In the embodiment of the present application, the air inlet pipe and the air outlet pipe are formed by connecting two sections of pipes with different flow directions, and further, the flow directions of the two sections of pipes are arranged at right angles.

[0071] It should be noted that the size designs of the first gas distribution pipeline and the second gas distribution pipeline in the present invention can be adjusted according to the size of the final PV panel and the related processing box. BRIEF DESCRIPTION OF THE DRAWINGS

[0072] Figure 1 It is a schematic diagram of some photovoltaic stacks (top layer + lower layer stack) reacting with gases under heating conditions in a process chamber;

[0073] Figure 2 It is a standard design of an existing selenization / sulfurization process box in one embodiment, wherein a) a three-dimensional view; b) a detailed side view;

[0074] Figure 3 It is a standard design of the gas left inlet portion in one embodiment of the existing selenization / sulfurization process equipment, wherein: a) a top view; b) a side view;

[0075] Figure 4 is a schematic diagram of non-uniform gas distribution in one embodiment of a standard selenization / sulfurization process box, wherein a) simulated gas flow lines in the selenization / sulfurization process box, b) an optical scan of the top layer of the relevant photovoltaic stack after processing in the standard selenization or sulfurization process box under the same process conditions;

[0076] Figure 5 are different existing designs of the process chamber inlet section: a) standard design; b) modified design 1; c) modified design 2;

[0077] Figure 6The non-uniform gas distribution in two improved process boxes: a) Simulated gas streamlines of improved design 1 ( Figure 5 b)) Simulated gas streamline of improved design 2 ( Figure 5 c));

[0078] Figure 7 It is a schematic diagram of the connection relationship between the first gas distribution device and the first communication device designed for the gas inlet portion of the processing chamber in the present invention;

[0079] Figure 8 It is another schematic diagram of the design of the gas inlet part of the processing chamber in the present invention;

[0080] Fig. 9 is a structural schematic diagram of the first gas distribution device in the present invention;

[0081] Fig.10 It is a schematic diagram of the connection relationship between the second gas distribution device and the third communication device designed for the gas outlet portion of the processing chamber in the present invention;

[0082] Fig.11 It is a schematic diagram of the structure of the gas inlet part when the first gas distribution device in the present invention adopts a semi-cylindrical shape;

[0083] Fig.12 It is a schematic diagram of the structure of the gas outlet portion when the second gas distribution device in the present invention adopts a semi-cylindrical shape;

[0084] Fig.13 is adopting Fig.11 and Fig.12 Comparison of gas velocity on the X-axis between the standard design and the slot pattern design of the present invention;

[0085] Fig.14 is adopting Fig.11 and Fig.12 Comparison of gas velocity on the Y axis between the standard design and the slot pattern design of the present invention;

[0086] Fig.15 is adopting Fig.11 and Fig.12 Comparison of gas velocity on the Z axis between the standard design and the slot pattern design of the present invention;

[0087] Fig.16 is adopting Fig.11 and Fig.12 Schematic diagram of simulated gas flow lines in the processing chamber under the design;

[0088] Fig.17 It is a schematic diagram of the design of the first gas distribution pipeline of the gas inlet part adopting two rectangular parallelepipeds of the same size;

[0089] Fig.18 It is a schematic diagram of the design of the first gas distribution pipeline of the gas inlet part adopting two rectangular parallelepiped shapes of different sizes;

[0090] Fig.19 1. It is a schematic diagram showing the comparison of the gas velocity on the X-axis when the first gas distribution pipeline adopts a semi-cylindrical design and a rectangular parallelepiped design;

[0091] Fig. 20 It is a schematic diagram of the design of the second gas distribution pipeline in the gas outlet part adopting a rectangular parallelepiped shape;

[0092] Fig.21 It is a schematic diagram of the design of a second gas distribution pipeline in the gas outlet part adopting a smaller rectangular parallelepiped shape. DETAILED DESCRIPTION

[0093] In the present invention, a first gas distribution device and a first connecting device in a groove mode are designed at the gas inlet part at the inlet of the processing box, and a second gas distribution device and a third connecting device in a groove mode are designed at the gas outlet part at the outlet of the processing chamber to solve the problem of uneven gas distribution in the photovoltaic manufacturing processing box.

[0094] Embodiment 1

[0095] See also Figure 7 For the gas inlet part at the entrance of the processing box, a first gas distribution device of slot mode design is designed to replace the manifold 3 used in the standard design. In this embodiment, a first gas distribution device 105 and a first connecting device 9 are used to realize gas distribution and transmit the gas to the processing chamber 20. The first connecting device 9 is a flat quadrangular prism-shaped cavity box. The two opposite sides of the cavity box are uncovered and the two uncovered sides are used as the inlet and the outlet respectively. The first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are consistent in shape and size; wherein, the length of the cavity box>width>height, and the two uncovered sides of the cavity box are parallel to the height direction of the cavity box, that is, the cavity box inlet is long and narrow.

[0096] See also Figure 8 In the gas inlet part of the processing box, the gas passes through the intake pipe inlet 1, the intake pipe 2, the intake pipe outlet, the first gas distribution device inlet (i.e., the first inlet) 101, the first gas distribution device 105, the first gas distribution device outlet (i.e., the first outlet) 102, the first connecting device inlet 103 (i.e., the cavity box inlet), the first connecting device 9, the first connecting device outlet (i.e., the cavity box outlet) 5, the processing chamber inlet 104 in sequence, and then is transmitted to the processing chamber 20.

[0097] The inlet of the first connecting device is rectangular, and the length and width of the inlet of the first connecting device are the length and height of the first connecting device (a flat quadrangular prism-shaped cavity box). The first outlet 102, the first connecting device inlet 103, the first connecting device outlet 5, and the processing chamber inlet 104 are consistent in shape and size. Further, after the gas is output from the first outlet 102 of the first gas distribution device 105, the cross-sectional size and shape of the gas flow remain consistent during the flow through the first connecting device inlet 103, the first connecting device 9, the first connecting device outlet 5, and the processing chamber inlet 104.

[0098] Preferably, the ratio of the length, width and height of the flat quadrangular prism-shaped cavity box is between 5000:20:1 and 20000:100:1, that is, the ratio of the length and width of the first outlet, the first connecting device inlet, the first connecting device outlet and the processing chamber inlet is between 5000:1 and 20000:1.

[0099] Furthermore, the first gas distribution device 105 includes a first gas distribution pipeline 1051, and the first inlet is arranged at the top of the first gas distribution pipeline. Preferably, the first inlet is arranged at the top center of the first gas distribution pipeline, and the first outlet is located lower than the first inlet; it can be understood that the shape and size of the first inlet depend on the shape and size of the intake pipeline 2, and the first outlet is long and narrow.

[0100] For further information, see Fig. 9 The first gas distribution device 105 may include multiple first gas distribution pipelines 1051. For example, m first gas distribution pipelines 1051 are connected in sequence to form a first gas distribution device 105. For convenience, the m first gas distribution pipelines are also connected by the above-mentioned first connecting device. Here, the first connecting device 9 used between the m first gas distribution pipelines is recorded as the second connecting device 7. It can be understood that the second connecting device 7 and the first connecting device 9 are actually the same device. The "first" and "second" here are only used to distinguish the different installation locations of the connecting devices.

[0101] Furthermore, the above m=2 realizes multiple uniform distribution processes of the gas, thereby improving the uniformity of the gas entering the processing chamber. For example, Fig. 9In the embodiment, the first inlet is arranged at the top center of the first first gas distribution pipeline 1051, and the first outlet is arranged at a position lower than the top of the last first gas distribution pipeline. The gas enters from the top of the first first gas distribution pipeline 1051, and the first gas uniform distribution process is performed in the first first gas distribution pipeline 1051. Then, the gas is transmitted to the last first gas distribution pipeline 1051 through the second connecting device 7, and the second gas uniform distribution process is performed. Then, the gas is transmitted to the processing chamber 20 through the first connecting device 9. Thus, at the gas inlet part at the inlet of the processing box, before the gas enters the processing chamber, the gas enters the first gas distribution device 105 from the gas inlet pipeline 2, and at least two gas uniform distribution processes are performed in the first gas distribution device 105. In addition, the area size, shape and height of the flow cross section of the gas flow are always kept consistent during the transmission process through the second connecting device 7, the first outlet 102, the first connecting device 9 and the processing chamber inlet 104, which effectively ensures the uniformity of the distribution of the gas entering the processing chamber.

[0102] For further information, see Fig.10 The present invention designs a second gas distribution device with a slot mode design for the gas outlet portion at the outlet of the processing box. The design concept of the second gas distribution device 13 is similar to that of the first gas distribution device 105. Specifically, the second gas distribution device 13 has a second inlet 106 and a second outlet 107. The processing chamber outlet 11 is connected to the second inlet 106, and the second outlet 107 is connected to the gas outlet pipe 14.

[0103] The processing chamber outlet 11 and the second inlet 106 (second gas distribution device 13) are connected through the third connecting device 12. The third connecting device 12 has the same structure as the first connecting device 9. It can be understood that the third connecting device 12 and the first connecting device 9 and the second connecting device 7 are actually the same devices. The "third", "first" and "second" here are only used to distinguish the different installation positions of the connecting devices. After the photovoltaic device is processed in the processing chamber, the gas flows out from the processing chamber outlet 11 and flows into the second gas distribution device 13 through the third connecting device 12. Referring to the description of the aforementioned processing chamber gas inlet part, in the processing chamber gas outlet part, the processing chamber outlet 11, the third connecting device 12 inlet, the third connecting device 12 outlet, and the second inlet 106 are all long and narrow and their shape and size are consistent with the uncovered side of the cavity box of the third connecting device 12; that is, the length of the processing chamber outlet 11, the third connecting device 12 inlet, the third connecting device 12 outlet, and the second inlet 106 are consistent with the length of the third connecting device 12, and the width of the processing chamber outlet 11, the third connecting device 12 inlet, the third connecting device 12 outlet, and the second inlet 106 are consistent with the height of the third connecting device 12; the area size and shape of the airflow cross-section of the gas flowing out of the processing chamber outlet 11 are the same during the entire flow process.

[0104] The second gas distribution device 13 includes a second gas distribution pipeline, the second outlet is arranged at the top of the second gas distribution pipeline (preferably, arranged at the top center of the second gas distribution pipeline), and the second inlet is located lower than the second outlet; the second inlet is arranged along the length direction of the second gas distribution pipeline and the length of the second inlet is consistent with the length of the second gas distribution pipeline; combined with the above, it can be seen that the lengths of the processing chamber outlet 11, the third connecting device 12, and the second gas distribution device 13 are consistent;

[0105] Since there is no need to redistribute the gas multiple times, only one second gas distribution pipeline is used in the second gas distribution device 13 for gas collection. The gas in the second gas distribution pipeline is evenly distributed and then passes through the gas outlet pipeline 14 and finally leaves the gas outlet pipeline outlet 15 .

[0106] It should be noted that the height of the second inlet of the processing chamber outlet part is greater than the height of the first outlet of the processing chamber inlet part, that is, the height of the processing chamber outlet is greater than the height of the processing chamber inlet.

[0107] Embodiment 2

[0108] In this embodiment, the first gas distribution pipeline 1051 is semi-cylindrical. Fig.11 , wherein: a) a top view; b) a side view. Arrows indicate the movement of gas flow. In order to avoid unnecessary repetition, only the differences with respect to the first gas distribution device in the above-mentioned embodiment are explained.

[0109] In this embodiment, the first gas distribution device includes two semi-cylindrical pipes, namely, a semi-cylindrical first gas distribution pipe 6 and a first gas distribution pipe 8, wherein the rectangular plane of the semi-cylindrical pipe is located below the curved surface of the semi-cylindrical pipe, and the rectangular plane of the semi-cylindrical pipe is parallel to the ground;

[0110] The first inlet 101 is arranged on the curved surface of the first semi-cylindrical pipe 6 (preferably, arranged at the center of the curved surface) and the height of the first inlet 101 from the rectangular plane of the semi-cylindrical pipe is the radius of the semi-cylindrical pipe;

[0111] The two semi-cylindrical pipes are connected via a second connecting device 7, the first outlet 102 is arranged on the curved surface of the second semi-cylindrical pipe 8 and the height of the first outlet 102 is lower than the first inlet 101; when there are multiple first gas distribution pipes in the first gas distribution device, each first gas distribution pipe is further provided with a gas flow hole 1052 for connecting the first gas distribution pipe (6, 8) and the second connecting device 7;

[0112] The first outlet is arranged along the length direction of the semi-cylindrical pipe 8, and the distance between the two semicircular planes of the semi-cylindrical pipe 8 is recorded as the length of the semi-cylindrical pipe 8. The length of the first outlet 102 is consistent with the length of the semi-cylindrical pipe 8. Then, the gas undergoes the first gas uniform distribution in the first semi-cylindrical pipe 6, is transmitted to the second semi-cylindrical pipe 8 through the second connecting device 7, undergoes the second gas uniform distribution in the second semi-cylindrical pipe 8, and is transmitted to the processing chamber 20 through the first connecting device 9. Before the gas enters the processing chamber, the height, area size and shape of the air flow section at each inlet / outlet are the same.

[0113] Since two gas uniform distribution processes are performed twice by using two semi-cylindrical pipes (6, 8), the uniformity of gas distribution in the first gas distribution pipe along the Z axis is greatly improved. In order to realize a thin sheet-like gas flow in the second connecting device 7 and the first connecting device 9, the ratio between the length, width and height of the second connecting device 7 and the first connecting device 9 is between 5000:20:1 and 20000:100:1.

[0114] In this embodiment, the second gas distribution pipe is semi-cylindrical. Fig.12 , wherein a) a top view; b) a side view. Arrows indicate the movement of gas flow. In order to avoid unnecessary repetition, only the differences with respect to the second gas distribution device in the above-mentioned embodiment are explained.

[0115] In this embodiment, the second gas distribution device includes a semi-cylindrical second gas distribution pipeline, the rectangular plane of the semi-cylindrical pipeline of the second gas distribution pipeline is located below the curved surface of the semi-cylindrical pipeline, and the rectangular plane of the semi-cylindrical pipeline of the second gas distribution device is parallel to the ground;

[0116] The second inlet 106 is disposed on the curved surface of the semi-cylindrical pipe and the height of the second inlet from the rectangular plane of the semi-cylindrical pipe is less than the radius of the semi-cylindrical pipe;

[0117] The second outlet 107 is disposed at the center of the curved surface of the semi-cylindrical pipe and the height of the second outlet from the rectangular plane of the semi-cylindrical pipe is the radius of the semi-cylindrical pipe.

[0118] In order to evaluate the effect of the design of the gas inlet and gas outlet of the process box of this embodiment on the gas uniformity in the process chamber, a Figure 4 and Figure 6 The same fluid dynamics simulation in Figure 1. For the simulation settings, the top of the process box and the remaining boundaries are set as normal walls, i.e., there are no gas outlets. The gas ejects from the left inlet and leaves the domain from the right outlet. The remaining boundary conditions remain the same as in Figure 4 and Figure 6 same.

[0119] Fig.13 , 14 , 15 and 16 describe the simulation results of gas velocity and gas streamline distribution on the X, Y and Z axes respectively.

[0120] Fig.13 The standard design ( Figure 4 ) and the slot mode gas distribution device design in the embodiment of the present invention ( Fig.11 and Fig.12 )Comparison of gas velocity on the X-axis. Fig.13 For the standard design, the circled line should represent the gas velocity distribution, where each circle represents the gas exit velocity at outlet 5. For the slot mode design, Fig.13 The gas velocity in is a continuous solid line because a square-edged outlet 5 is applied. It can be clearly seen that with the help of the slot mode design, the velocity distribution of the relevant gas on the X-axis is more uniform than that in the standard design. The variation between the maximum and minimum gas velocities between the 20 outlets 5 in the standard design is ~1 m / s. For the slot mode gas distribution device design of the embodiment of the present invention, the gas velocity variation is about 0.1 m / s, that is, the distribution of the gas jet on the X-axis along the Z-axis is more uniform than that in the standard design.

[0121] Fig.14 and Fig.15The comparison of gas velocity on the Y-axis and Z-axis for the standard design and the slot mode gas distribution device design of the embodiment of the present invention is shown respectively. It is obvious that for the standard design, the gas velocity on the Y-axis and Z-axis varies by about 0.1 m / s, while the gas velocity of the slot mode design is negligible.

[0122] Fig.16 The gas distribution streamlines in the processing chamber of the slot pattern design of the embodiment of the present invention are shown. It is clearly shown that neither "finger"-shaped gas injection nor gas vortex can be observed here. The gas streamlines are parallel to each other, and the gas flow is more evenly distributed in the entire processing chamber.

[0123] Embodiment 3

[0124] In order to avoid unnecessary repetition, only the differences with respect to the above-mentioned embodiment will be explained. Fig.17 , wherein a) a top view; b) a side view. Arrows indicate the movement of gas flow. In this embodiment, the first gas distribution pipeline 1051 in the first gas distribution device is a rectangular parallelepiped, and the two first gas distribution pipelines 1051 have the same size. Since two first gas distribution pipelines 1051 are used to achieve two gas uniform distribution processes, similar uniform gas distribution can be achieved in the processing chamber 20.

[0125] Embodiment 4

[0126] In order to avoid unnecessary repetition, only the differences with respect to the above-mentioned embodiment will be explained. Fig.18 , wherein a) a top view; b) a side view. Arrows indicate the movement of gas flow. In this embodiment, the first gas distribution pipeline 1051 in the first gas distribution device is a rectangular parallelepiped, and the sizes of the two first gas distribution pipelines 1051 are different. Fig.17 The dimensions shown are larger and therefore, Fig.17 Compared with the design of , the gas flow distribution along the Z axis at the outlet 5 can be slightly improved.

[0127] Fig.19 Shows the above Fig.17 and Fig.18 The gas velocity of the two designs on the X-axis is compared. The two designs are also Fig.13 The gas distribution effects of the semi-cylindrical designs shown are compared. It can be seen that the gas flow velocity output by the larger rectangular first gas distribution pipeline 1051 is more uniform than the gas flow velocity output by the smaller rectangular first gas distribution pipeline 1051, similar to the semi-circular design.

[0128] Embodiment 5

[0129] In order to avoid unnecessary repetition, only the differences with respect to the above-mentioned embodiment will be explained. Fig. 20 , a) top view; b) side view. Arrows indicate the movement of gas flow. In the embodiment of the present invention, another implementation scheme is provided for the design of the gas outlet portion of the processing chamber. In the gas outlet portion of the processing chamber, the second gas distribution pipeline of the second gas distribution device adopts a rectangular parallelepiped design.

[0130] Embodiment 6

[0131] In order to avoid unnecessary repetition, only the differences with respect to the above-mentioned embodiment will be explained. Fig.21 , a) top view; b) side view. Arrows indicate the movement of gas flow. In the embodiment of the present invention, at the gas outlet portion of the processing chamber, the second gas distribution pipeline of the second gas distribution device is designed in a rectangular parallelepiped shape and the size of the rectangular parallelepiped second gas distribution pipeline is smaller than that in the above-mentioned embodiment 5.

[0132] In summary, the present invention provides a slot-mode gas distribution device for photovoltaic manufacturing, which provides a slot-mode gas distribution structure design in the gas inlet part and the gas outlet part, respectively. Compared with the standard design using a manifold with multiple outlet pipes, the present invention achieves a more uniform gas distribution in the processing box by setting each inlet and outlet in the gas flow process to a narrow and long shape, thereby effectively improving the semiconductor performance and aesthetics of the photovoltaic product.

[0133] The present invention is not limited to the above-mentioned specific implementation modes. Various changes made by ordinary technicians in this field based on the above-mentioned concepts without creative work are all within the protection scope of the present invention.

[0134] Description of Reference Numerals

[0135] 1Intake pipe inlet

[0136] 2 Intake pipe

[0137] 3 Gas manifold

[0138] 4 transmission tube

[0139] 5First connected device outlet

[0140] 6,8,1051 First gas distribution pipeline

[0141] 7. Second connected device

[0142] 9First Connected Device

[0143] 10 bowl-shaped holes

[0144] 11 Treatment room exit

[0145] 12Third connected device

[0146] 13. Second gas distribution equipment

[0147] 14 Exhaust pipe

[0148] 15 Exhaust pipe outlet

[0149] 16 Processing box

[0150] 17 Bottom Plate

[0151] 18 substrates

[0152] 19 Cover

[0153] 20 processing chamber

[0154] 101 First Entrance

[0155] 102 Exit 1

[0156] 103 Cavity Box Entrance

[0157] Entrance to treatment room 104

[0158] 105 First gas distribution equipment

[0159] 106 Second Entrance

[0160] 107 Exit 2

[0161] 1052 Gas flow holes

Claims

1. A trough mode gas distribution device for photovoltaic manufacturing, characterized in that: The method comprises a first gas distribution device located at the inlet of the processing chamber, wherein the first gas distribution device has a first inlet and a first outlet, wherein the first inlet is connected to the gas inlet pipeline, and the first outlet is connected to the inlet of the processing chamber; The first outlet and the entrance of the processing chamber are connected through a first connecting device, and the first connecting device is a flat quadrangular prism-shaped cavity box, and the two opposite sides of the cavity box are uncovered and the two uncovered sides serve as the entrance and the outlet respectively, and the first outlet, the entrance of the first connecting device, the first connecting device outlet, and the entrance of the processing chamber are consistent in shape and size; wherein, the length of the cavity box>width>height and the two uncovered sides of the cavity box are parallel to the height direction of the cavity box, that is, the entrance of the cavity box is long and narrow.

2. A trough mode gas distribution device for photovoltaic manufacturing according to claim 1, characterized in that: The ratio between the length, width and height of the flat quadrangular prism-shaped cavity box is between 5000:20:1 and 20000:100:

1.

3. A trough mode gas distribution device for photovoltaic manufacturing according to claim 2, characterized in that: The first gas distribution device comprises a first gas distribution pipeline, The first inlet is arranged at the top of the first gas distribution pipeline so that the flow direction of the gas through the first inlet is perpendicular to the bottom surface of the first gas distribution pipeline, and the top of the first gas distribution pipeline is the highest position of the first gas distribution pipeline from the ground; The first outlet is located at a position lower than the first inlet.

4. A trough mode gas distribution device for photovoltaic manufacturing according to claim 3, characterized in that: The first inlet is disposed at the top center of the first gas distribution conduit.

5. A trough mode gas distribution device for photovoltaic manufacturing according to claim 4, characterized in that: The first outlet is long and narrow, and is arranged along the length direction of the first gas distribution pipeline. The length of the first outlet is consistent with the length of the first gas distribution pipeline, that is, the length of the first gas distribution pipeline is consistent with the length of the first connecting device.

6. A trough mode gas distribution device for photovoltaic manufacturing according to claim 5, characterized in that: The height direction of the cavity box is perpendicular to the ground, so that the cavity box inlet and the cavity box outlet are at the same height from the ground, that is, the first outlet, the first connecting device inlet, the first connecting device outlet, and the processing chamber inlet are at the same height from the ground.

7. A trough mode gas distribution device for photovoltaic manufacturing according to claim 6, characterized in that: The first gas distribution device comprises m first gas distribution pipelines, m is greater than or equal to 2, the m first gas distribution pipelines are connected in sequence, and two adjacent first gas distribution pipelines are connected through a second connecting device to achieve multiple gas distribution processes, and the structure of the second connecting device is the same as that of the first connecting device; The first inlet is arranged on the first gas distribution pipeline at the starting end, and the first outlet is arranged on the first gas distribution pipeline at the tail end.

8. A trough mode gas distribution device for photovoltaic manufacturing according to claim 7, characterized in that: The first gas distribution pipe is semi-cylindrical or rectangular.

9. A trough mode gas distribution device for photovoltaic manufacturing according to claim 8, characterized in that: When the first gas distribution pipe is semi-cylindrical, The rectangular plane of the semi-cylindrical pipe is located below the curved surface of the semi-cylindrical pipe, and the rectangular plane of the semi-cylindrical pipe is parallel to the ground; The first inlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the first inlet from the rectangular plane of the semi-cylindrical pipe is the radius of the semi-cylindrical pipe.

10. A trough mode gas distribution device for photovoltaic manufacturing according to claim 9, characterized in that: The first inlet is arranged at the center of the curved surface of the semi-cylindrical pipe.

11. A trough mode gas distribution device for photovoltaic manufacturing according to claim 10, characterized in that: The first outlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the first outlet from the rectangular plane of the semi-cylindrical pipe is less than the radius of the semi-cylindrical manifold. The distance between the two semi-circular planes of the semi-cylindrical pipe is the length of the semi-cylindrical pipe, and the first outlet is arranged along the length direction of the semi-cylindrical pipe.

12. A trough mode gas distribution device for photovoltaic manufacturing according to claim 11, characterized in that: The sizes of the plurality of first gas distribution pipes are the same.

13. A trough mode gas distribution device for photovoltaic manufacturing according to claim 12, characterized in that: The sizes of the plurality of first gas distribution pipes are different.

14. A trough mode gas distribution device for photovoltaic manufacturing according to claim 1, characterized in that: The slot mode gas distribution device further comprises a second gas distribution device located at the outlet of the processing chamber, the second gas distribution device having a second inlet and a second outlet, the outlet of the processing chamber is connected to the second inlet, and the second outlet is connected to the gas outlet pipeline; The outlet and the second inlet of the processing chamber are connected via a third connecting device, and the third connecting device has the same structure as the first connecting device.

15. A trough mode gas distribution device for photovoltaic manufacturing according to claim 14, characterized in that: The second gas distribution device comprises a second gas distribution pipeline, The second outlet is arranged at the top of the second gas distribution pipeline so that the flow direction of the gas flowing out of the second outlet is perpendicular to the bottom surface of the second gas distribution pipeline, the second inlet is located lower than the second outlet, and the top of the second gas distribution pipeline is the highest position of the second gas distribution pipeline from the ground; The second inlet is long and narrow, and is arranged along the length direction of the second gas distribution pipeline. The length of the second inlet is consistent with the length of the second gas distribution pipeline, that is, the length of the second gas distribution pipeline is consistent with the length of the third connecting device.

16. A trough mode gas distribution device for photovoltaic manufacturing according to claim 15, characterized in that: The height of the second inlet is greater than the height of the first outlet.

17. A trough mode gas distribution device for photovoltaic manufacturing according to claim 16, characterized in that: The second gas distribution device includes a second gas distribution pipeline; The second gas distribution pipe is semi-cylindrical or rectangular.

18. A trough mode gas distribution device for photovoltaic manufacturing according to claim 17, characterized in that: When the second gas distribution pipe is semi-cylindrical, The rectangular plane of the semi-cylindrical pipe of the second gas distribution pipe is located below the curved surface of the semi-cylindrical pipe, and the rectangular plane of the semi-cylindrical pipe of the second gas distribution device is parallel to the ground; The second inlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the second inlet from the rectangular plane of the semi-cylindrical pipe is less than the radius of the semi-cylindrical pipe; The second outlet is arranged on the curved surface of the semi-cylindrical pipe and the height of the second outlet from the rectangular plane of the semi-cylindrical pipe is the radius of the semi-cylindrical pipe.

19. A trough mode gas distribution device for photovoltaic manufacturing according to claim 18, characterized in that: The air inlet pipe and the air outlet pipe are bent pipes.

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