Element separation method

Abstract

The embodiment of the invention provides an element separation method which is applied to an element separation system, and the element separation system comprises an ion source, a vacuum chamber and a receiving device. The ion source comprises a gasification mechanism, a plasma generation mechanism and a lead-out mechanism. The element separation method comprises the step of filling the gasification mechanism with a to-be-separated raw material. And controlling the gasification mechanism to gasify the to-be-separated raw materials to form saturated steam. Controlling the saturated vapor to enter the ionization chamber, controlling the ionization chamber to emit electrons, and ionizing the saturated vapor to form plasma. And controlling the electric field generator to generate an electric field, accelerating the plasma in the electric field, and controlling the plasma to enter the vacuum chamber from the outlet. And controlling the magnetic field generator to generate a magnetic field, applying deflection force to the plasma in the magnetic field, and controlling the plasma to be emitted to the receiving panel. The receiving panel is controlled to collect the plasma, and the receiving panel can be used for collecting at least two different plasmas. The element separation efficiency is favorably improved.

Description

Technical Field

[0001] The present application relates to the technical field of element separation, and in particular to a method for element separation. Background Art

[0002] In recent years, high-abundance stable isotopes have been widely used, but the natural abundance of each element is different, and different elements need to be separated and enriched. In the related technology, the element separation method has low separation efficiency and cannot meet the needs of large-scale element separation. Summary of the invention

[0003] In view of this, an embodiment of the present application provides an element separation method for improving element separation efficiency.

[0004] To achieve the above-mentioned purpose, an embodiment of the present application provides an element separation method, which is applied to an element separation system, wherein the element separation system includes an ion source, a vacuum chamber and a receiving device; the ion source includes a gasification mechanism, a plasma generation mechanism and an extraction mechanism, the plasma generation mechanism includes an ionization chamber, the extraction mechanism includes an electric field generator, and the vacuum chamber includes a magnetic field generator; the receiving device includes a receiving panel, and the outlet of the extraction mechanism and the receiving panel are arranged in the vacuum chamber at intervals; the element separation method includes:

[0005] Filling the raw materials to be separated into the gasification mechanism;

[0006] Controlling the gasification mechanism to gasify the raw material to be separated to form saturated vapor;

[0007] Controlling the saturated vapor to enter the ionization chamber, controlling the ionization chamber to emit electrons, and ionizing the saturated vapor to form plasma;

[0008] Controlling the electric field generator to generate an electric field, accelerating the plasma in the electric field, and controlling the plasma to be ejected from the outlet into the vacuum chamber;

[0009] Controlling the magnetic field generator to generate a magnetic field, applying a deflection force to the plasma in the magnetic field, and controlling the plasma to be ejected toward the receiving panel;

[0010] The receiving panel is controlled to collect the plasma, wherein the receiving panel can be used to collect at least two different plasmas.

[0011] In one embodiment, the step of filling the gasification mechanism with the raw materials to be separated comprises:

[0012] Filling different types of raw materials to be separated in the gasification mechanism;

[0013] adjusting the gasification temperature of the gasification mechanism to the maximum gasification temperature among the gasification temperatures of the raw materials to be separated; and / or,

[0014] adjusting the arc voltage of the plasma generating mechanism to the maximum ionization arc voltage among the ionization arc voltages of the raw materials to be separated; and / or,

[0015] The current of the plasma generating mechanism is adjusted to a maximum ionization current among the ionization currents of the respective raw materials to be separated.

[0016] In one embodiment, the gasification mechanism includes at least two containing devices, and the filling of different types of raw materials to be separated in the gasification mechanism includes:

[0017] Different kinds of raw materials to be separated are filled in the at least two containing devices.

[0018] In one embodiment, the gasification mechanism includes a containing device, and the filling of different types of raw materials to be separated in the gasification mechanism includes:

[0019] fusing at least two of the raw materials to be separated into an alloy;

[0020] The alloy is placed in the containment device.

[0021] In one embodiment, the ratio of the relative element masses of the raw materials to be separated is greater than or equal to 0.9 and less than or equal to 1.1.

[0022] In one embodiment, the difference in ionization arc voltage of each of the raw materials to be separated is greater than or equal to -1000V and less than or equal to 1000V.

[0023] In one embodiment, the difference between the ionization currents of the raw materials to be separated is greater than or equal to -500A and less than or equal to 500A.

[0024] In one embodiment, the receiving device includes a current detector, and the current detector is disposed on the receiving panel. The controlling the receiving panel to collect the plasma includes:

[0025] Controlling the current detector to detect the current offset on the receiving panel;

[0026] If the current offset is not within the deviation error range, reducing the current offset by adjusting the arc voltage and current of the plasma generating mechanism;

[0027] If the current offset is within the deviation error range, the plasma is collected by the receiving panel.

[0028] In one implementation, the deviation error is that under a flow velocity intensity, the difference between the maximum value and the minimum value of the current is no more than 2A.

[0029] In one embodiment, the receiving panel collects the plasma including:

[0030] The distance between the receiving panel and the outlet is adjusted so that the current detector can detect the current generated by the plasma.

[0031] The element separation method provided in the embodiment of the present application is that the element separation system converts the raw material to be separated into saturated vapor through a gasification mechanism, and then ionizes it into plasma through a plasma generation mechanism, and the extraction mechanism accelerates the plasma to realize the conversion of the raw material to be separated into a plasma state that is easy to separate. By means of a vacuum chamber and a magnetic field generator inside it, the plasma is deflected by generating a magnetic field, so that different types of plasma can be separated. The outlet of the extraction mechanism is arranged at intervals from the receiving panel in the vacuum chamber, and the receiving panel of the receiving device is arranged to collect different types of plasmas that have been separated to realize the separation of different types of elements. In addition, multiple elements can be separated at the same time by loading the raw material to be separated at one time, which is conducive to improving the efficiency of element separation and meeting the needs of large-scale separation of elements. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 This is a schematic diagram of the structure of an element separation system in one embodiment of the present application;

[0033] Figure 2 This is a schematic diagram of the structure of an ion source in one embodiment of the present application;

[0034] Figure 3 Flow chart of an element separation method in one embodiment of the present application.

[0035] Reference numerals:

[0036] 10. Element separation system; 1. Ion source; 11. Vaporization mechanism; 111. Container; 1111. First container; 1112. First opening; 112. Heating element; 12. Plasma generating mechanism; 121. Ionization chamber; 1211. Second container; 1212. Second opening; 1213. Third opening; 13. Leading-out mechanism; 131. Electric field generator; 1311. Container area; 1312. Fourth opening; 1313. Fifth opening; 132. First lead-out plate; 133. Second lead-out plate; 14. Support; 2. Receiving device; 21. Receiving panel; 3. Vacuum chamber; 31. Magnetic field generator. DETAILED DESCRIPTION

[0037] It should be noted that, in the absence of conflict, the embodiments and technical features in the embodiments of the present application can be combined with each other, and the detailed description in the specific implementation method should be understood as an explanation of the purpose of the present application and should not be regarded as an improper limitation on the present application.

[0038] In the description of the embodiments of the present application, it should be noted that the terms "transmission direction of the ray", "height direction", "first direction", "second direction", etc. indicate the orientation or position relationship based on the orientation or position relationship shown in the drawings. These orientation terms are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the embodiments of the present application. The present application will be further described in detail below in conjunction with the drawings and specific embodiments.

[0039] This application embodiment provides a kind of Figure 1 to Figure 2 The element separation system 10 includes an ion source 1, a vacuum chamber 3 and a receiving device 2. The ion source 1 includes a gasification mechanism 11, a plasma generation mechanism 12 and an extraction mechanism 13, the plasma generation mechanism 12 includes an ionization chamber 121, the extraction mechanism 13 includes an electric field generator 131, and the vacuum chamber 3 includes a magnetic field generator 31. The receiving device 2 includes a receiving panel 21, and the outlet of the extraction mechanism 13 and the receiving panel 21 are arranged in the vacuum chamber 3 at intervals.

[0040] The ion source 1 is a device that ionizes neutral atoms or molecules and extracts the ions generated by the ionization. In the embodiment of the present application, the ion source 1 is the starting part of the element separation system 10, which is responsible for a series of treatments of the raw materials to be separated to form an ion state that can be subsequently operated. The ion source 1 includes several parts such as a gasification mechanism 11, a plasma generation mechanism 12 and an extraction mechanism 13, and each part works together to achieve the generation and preliminary treatment of ions.

[0041] The gasification mechanism 11 gasifies the raw material to be separated into saturated vapor. The raw material to be separated may usually be a substance in the form of solid or liquid. The gasification mechanism 11 converts the raw material into a gaseous saturated vapor state through certain physical or chemical means, such as heating, decompression, etc., so as to perform subsequent operations such as ionization.

[0042] For example, the gasification mechanism 11 can be equipped with a precise temperature control system to more accurately control the gasification temperature of the raw materials to be separated to ensure the formation of stable and saturated vapor of appropriate concentration. The gasification mechanism 11 can also be provided with a gas flow monitoring device to understand the flow of the vapor after gasification in real time so as to adjust it as needed.

[0043] The plasma generation mechanism 12 includes an ionization chamber 121 , and the ionization chamber 121 ionizes the saturated vapor generated by the vaporization mechanism 11 to form plasma.

[0044] Ionization refers to the process of giving atoms or molecules enough energy to free their outer electrons from the nucleus to form positively charged ions and free electrons. In the ionization chamber 121, a suitable ionization method such as electron collision, radio frequency discharge, etc. is used to ionize the saturated vapor, thereby generating plasma, a state of matter that contains a large number of ions, electrons, and neutral particles and is electrically neutral as a whole.

[0045] The extraction mechanism 13 includes an electric field generator 131, which can generate an electric field. The electric field is used to accelerate the plasma so that the plasma can move in a predetermined direction and speed, so that the plasma can subsequently interact with the magnetic field in the vacuum chamber 3 to perform operations such as element separation. The electric field exerts a force on the charged particles in the plasma, so that they gain kinetic energy and accelerate their movement.

[0046] Exemplarily, the electric field generator 131 can not only generate a basic uniform electric field for accelerating plasma, but also has the ability to generate a gradient electric field. By adjusting the gradient of the electric field, the acceleration process of the plasma can be more finely controlled, so that ions of different masses or charges can obtain a more appropriate acceleration effect, which is conducive to subsequent more accurate element separation.

[0047] The receiving device 2 is used to collect at least two different plasmas after the previous series of treatments. When the plasmas formed by different elements are deflected by the magnetic field in the vacuum chamber 3, they will fall on different positions of the receiving panel 21, thereby realizing the collection of plasmas of different elements, providing a basis for further analysis or processing of different elements.

[0048] Exemplarily, the receiving panel 21 may use a special coating material to prevent chemical reactions while ensuring a good collection effect.

[0049] The vacuum chamber 3 is a closed space maintained at a relatively low pressure or even close to a vacuum state. The vacuum chamber 3 provides a suitable environment for the plasma generated by the ion source 1 and subsequent separation operations. On the one hand, the vacuum chamber 3 can reduce the interference of gas molecules on the movement of the plasma. On the other hand, the magnetic field generated by the magnetic field generator 31 in the vacuum chamber 3 can better act on the plasma, causing the plasma to deflect in the magnetic field. Since different plasmas have different deflection radii and different motion trajectories, the plasma ejected from the same position is separated, thereby achieving element separation.

[0050] Exemplarily, the vacuum chamber 3 is provided with a vacuum degree monitor to monitor the vacuum degree inside the vacuum chamber 3 in real time to ensure that it is always maintained at an appropriate level to ensure that the movement of the plasma is not disturbed by too many gas molecules, while also facilitating the effective effect of the magnetic field on the plasma.

[0051] In some embodiments, an anti-sputtering coating is provided on the wall of the vacuum chamber 3 to reduce damage to the wall of the vacuum chamber 3 caused by ion sputtering that may be generated during the interaction between plasma and magnetic field, thereby extending the service life of the vacuum chamber 3.

[0052] See also Figure 3 The element separation method includes the following steps S101 to S106:

[0053] Step S101, loading the raw materials to be separated into the gasification mechanism.

[0054] The operator determines the loading amount according to the design capacity of the gasification mechanism 11 and the requirements of the subsequent separation process, and ensures that the raw materials are evenly distributed in the effective gasification area to avoid local accumulation or vacancies that affect the subsequent gasification effect and stability.

[0055] Step S102, controlling the gasification mechanism to gasify the raw material to be separated to form saturated steam.

[0056] The gasification mechanism 11 is used to convert the loaded raw materials to be separated into a saturated vapor state, which is a key link in the entire element separation process. The gasification process is essentially to give enough energy to the raw material particles to overcome the intermolecular forces, so that they can escape from the solid or liquid state to the gas state, ensure that the chemical structure of the raw materials is not destroyed during the conversion to the gas state, and stably form saturated vapor that meets the requirements of subsequent ionization operations, preparing for the next stage of plasma generation.

[0057] Step S103, controlling the saturated vapor to enter the ionization chamber, controlling the ionization chamber to emit electrons, and ionizing the saturated vapor to form plasma.

[0058] As a product of the gasification process, saturated steam carries atoms or molecules of the elements to be separated, and enters the ionization chamber 121 in an orderly manner under the guidance of precisely controlled airflow. The electron emission device specially configured in the ionization chamber 121 adjusts the emission current, voltage and other parameters to determine the number, rate and energy of electron emission, in preparation for impacting the saturated steam and promoting its ionization. The high-speed ejected electrons collide with the saturated steam entering the ionization chamber 121, and with the energy carried by the electrons, they break the electron cloud structure of the atoms and molecules in the saturated steam, causing the outer electrons to detach or transfer electrons, and the originally electrically neutral atoms and molecules become charged ions. When a large number of ions and electrons that are still free and do not participate in the ionization reaction coexist in the same chamber, plasma is formed.

[0059] Step S104, controlling the electric field generator to generate an electric field, accelerating the plasma in the electric field, and controlling the plasma to be ejected into the vacuum chamber from the outlet.

[0060] According to the principle of electromagnetics, the electric field is constructed by using the potential difference between the current-carrying conductors and the electrode plates, giving the charged particles (positive ions, negative ions and electrons) in the plasma the power to move in a directional manner, so that they can move faster. Under the guidance of the electric field, the accelerated plasma is ejected toward the pre-designed outlet of the extraction mechanism 13, and the ejection direction and angle of the plasma are precisely controlled to ensure that it can be ejected into the vacuum chamber 3 at a high speed and in an accurate posture.

[0061] Step S105, controlling the magnetic field generator to generate a magnetic field, applying a deflection force to the plasma in the magnetic field, and controlling the plasma to be ejected toward the receiving panel.

[0062] The magnetic field generator 31 works based on the principle of electromagnetic induction and applies a deflection force to the plasma that enters its range of action. According to the Lorentz force law, when in a magnetic field, charged particles will be subjected to a force perpendicular to the direction of motion and the direction of the magnetic field, namely the Lorentz force. Since the ions formed by different elements differ in mass and charge, the magnitude and direction of the Lorentz force they are subjected to are different under the same magnetic field strength and plasma movement speed, which leads to different degrees of deflection of their motion trajectories. The differentiated deflection characteristics provide a physical basis for the subsequent separation of plasmas of different elements. The plasmas screened by the magnetic field deflection are precisely controlled to be shot toward the receiving panel 21 along their own unique trajectories under the coordinated guidance of the magnetic field and the system structure.

[0063] Step S106, controlling the receiving panel to collect plasma, wherein the receiving panel can be used to collect at least two different plasmas.

[0064] The plasma collection task is completed by controlling the receiving panel 21. The receiving panel 21 has the ability to collect at least two different plasmas. By effectively collecting at least two different plasmas by the receiving panel 21, the entire process from the original raw material to be separated to the final separation of different element plasmas is completed.

[0065] In the element separation method provided in the embodiment of the present application, the element separation system 10 converts the raw material to be separated into saturated vapor through the gasification mechanism 11, and then the plasma generation mechanism 12 ionizes it into plasma, and the extraction mechanism 13 accelerates the plasma to realize the conversion of the raw material to be separated into a plasma state that is easy to separate. By means of the vacuum chamber 3 and the magnetic field generator 31 inside it, the plasma is deflected by generating a magnetic field, so that different types of plasma can be separated. The outlet of the extraction mechanism 13 is arranged at intervals from the receiving panel 21 in the vacuum chamber 3. By setting the receiving panel 21 of the receiving device 2 to collect different types of plasma that have been separated, the separation of different types of elements can be realized. In addition, the raw material to be separated can be loaded at one time, and multiple elements can be separated at the same time, which is conducive to improving the efficiency of element separation and meeting the needs of large-scale separation of elements.

[0066] In some embodiments, see Figure 1 to Figure 2 The gasification mechanism 11 includes a containing device 111, the containing device 111 has a first containing chamber 1111, and the gasification mechanism 11 gasifies the raw material to be separated in the first containing chamber 1111. The ionization chamber 121 has a second containing chamber 1211, and the ionization chamber 121 ionizes the saturated steam in the second containing chamber 1211 to generate plasma. The electric field generator 131 has a containing area 1311, and the electric field generator 131 generates an electric field in the containing area 1311. The first containing chamber 1111, the second containing chamber 1211, and the containing area 1311 are arranged in sequence along the first direction.

[0067] The accommodating device 111 is provided with a first opening 1112 communicating with the first accommodating cavity 1111 on one side close to the ionization chamber 121 along the first direction. The ionization chamber 121 is provided with a second opening 1212 and a third opening 1213 communicating with the second accommodating cavity 1211 along the first direction. The second opening 1212 is close to the first opening 1112 and is arranged opposite to the first opening 1112, and the first opening 1112 is in communication with the second opening 1212. The electric field generator 131 is provided with a fourth opening 1312 and a fifth opening 1313 communicating with the accommodating area 1311 along the first direction. The fourth opening 1312 is close to the third opening 1213 and is arranged opposite to the third opening 1213.

[0068] The accommodating device 111 is used to provide a specific space, namely, a first accommodating cavity 1111 .

[0069] The first accommodating chamber 1111 is a space area inside the accommodating device 111, and is the place where the raw materials to be separated are gasified. It provides a relatively stable environment for the gasification process, so that the conditions required for gasification (such as temperature, pressure, etc.) can be well controlled and maintained in this chamber, so as to effectively gasify the raw materials to be separated to form saturated steam. It is used to place the raw materials to be separated so that the raw materials to be separated can be gasified in this relatively closed and suitable environment.

[0070] The second accommodating chamber 1211 is the specific location where saturated vapor is ionized to generate plasma. In this chamber, by adopting a suitable ionization method (such as electron collision, radio frequency discharge, etc.), the atoms or molecules in the saturated vapor can be ionized under a specific energy environment to generate plasma, a material state that contains a large number of ions, electrons and neutral particles and is electrically neutral as a whole.

[0071] The containing area 1311 is a space area inside the electric field generator 131, and the electric field is generated in this cavity. It provides a relatively closed and controllable space environment for the generation of the electric field and the action on the plasma, so that the electric field can accelerate the plasma according to the expected requirements, ensuring that the plasma can enter the vacuum chamber 3 at a suitable speed and direction.

[0072] For the convenience of explanation, the first direction here is Figure 1 or Figure 2 The direction mentioned, of course, the first direction may also be other directions, which is not limited here.

[0073] The first accommodating chamber 1111, the second accommodating chamber 1211 and the accommodating area 1311 are arranged in sequence along the first direction. In this way, saturated steam can enter the second accommodating chamber 1211 along the first direction, generate plasma in the second accommodating chamber 1211, and the plasma enters the accommodating area 1311 along the first direction and is accelerated in the electric field.

[0074] The first opening 1112 is located on the side of the containing device 111 close to the ionization chamber 121 along the first direction, and is communicated with the first containing chamber 1111. It plays a role in connecting the first containing chamber 1111 of the containing device 111 and the ionization chamber 121, so that the saturated steam vaporized in the first containing chamber 1111 can smoothly enter the second containing chamber 1211 of the ionization chamber 121 through the first opening 1112, so as to perform subsequent ionization operations.

[0075] The second opening 1212 is located in one of the two openings of the ionization chamber 121 that are arranged opposite to each other along the first direction, close to the first opening 1112 and arranged opposite to the first opening 1112, and communicates with the second accommodating chamber 1211 of the ionization chamber 121. It is the entrance for saturated steam to enter the second accommodating chamber 1211 from the first accommodating chamber 1111, and together with the first opening 1112, it constitutes a channel for saturated steam to be transmitted between the vaporization mechanism 11 and the ionization chamber 121.

[0076] The third opening 1213 is also an opening of the ionization chamber 121 opposite to the second opening 1212 and communicates with the second accommodating cavity 1211. Its function is to provide a passage to the channel accommodating region 1311 for some plasma generated during the ionization process.

[0077] The fourth opening 1312 is located at one of the two openings of the electric field generator 131 that are oppositely arranged along the first direction, close to the third opening 1213 and opposite to the third opening 1213, and is communicated with the accommodating area 1311 of the electric field generator 131. It is the entrance for the plasma to enter the accommodating area 1311 of the electric field generator 131 from the second accommodating cavity 1211 of the ionization chamber 121, so that the plasma generated by ionization can smoothly enter the electric field generator 131 for acceleration operation.

[0078] The fifth opening 1313 is another opening of the electric field generator 131 arranged opposite to the first direction, opposite to the fourth opening 1312, and connected to the containing area 1311. The fifth opening 1313 faces the vacuum chamber 3 and guides the accelerated plasma to the magnetic field of the vacuum chamber 3.

[0079] The first accommodating chamber 1111, the second accommodating chamber 1211 and the accommodating area 1311 are sequentially arranged along the first direction, and each accommodating chamber is provided with a corresponding opening along the first direction. In this way, the raw materials to be separated can be gasified, ionized and accelerated sequentially along the first direction. The layout is reasonable, the transport path of the intermediate products is reduced, the efficiency of the ion source 1 in generating plasma is improved, and the structure of the ion source 1 is simplified.

[0080] In some embodiments, see Figure 1 to Figure 2 The gasification mechanism 11 includes at least two accommodating devices 111 , each of which has a first accommodating cavity 1111 and a first opening 1112 , and the number of the second openings 1212 is the same as the number of the first openings 1112 .

[0081] For example, the same type of raw materials to be separated may be placed in one container 111. Raw materials to be separated with similar properties may also be placed in one container 111, for example, raw materials to be separated with similar melting points or chemical properties may be placed in one container 111. Of course, all raw materials to be separated may also be melted to form an alloy and placed in the same container 111.

[0082] At least two containing devices 111 are arranged in parallel. Each containing device 111 has a dedicated first containing chamber 1111 to store the raw materials to be separated and a corresponding first opening 1112 to output the gasified saturated steam. At the same time, the number of second openings 1212 configured in the ionization chamber 121 is equal to the number of first openings 1112, which is intended to receive the saturated steam produced by each containing device 111 one-to-one, seamlessly connect to the subsequent ionization process, and facilitate the synchronous and orderly processing of multiple raw materials to be separated.

[0083] In some embodiments, see Figure 1 to Figure 2 The gasification mechanism 11 includes a heating element 112 , and the heating element 112 is sleeved on the outer wall of the containing device 111 .

[0084] The heating element 112 is a device that can generate heat. Its energy source is usually electrical energy or thermal energy (such as steam heat, hot oil heat, etc.). Its function is to provide heat to the surrounding environment or objects in contact with it, so as to increase the temperature of the target object to meet the temperature requirements of gasification.

[0085] The specific structure of the heating element 112 is not limited here.

[0086] A heating element 112 is used and is sleeved on the outer wall of the containing device 111. The purpose of such a layout is to utilize the heat generated by the heating element 112 to be gradually transferred to the first containing chamber 1111 inside through the outer wall of the containing device 111 by heat conduction, so as to create a suitable high-temperature environment for the raw materials to be separated placed in the chamber, so as to promote the raw materials to absorb enough heat, overcome the intermolecular forces, and realize the transformation from the original solid or liquid state to the gaseous saturated vapor state, so as to meet the requirements of the subsequent processing procedures for the physical state of the raw materials to be tested.

[0087] In some embodiments, see Figure 1 to Figure 2 The number of the accommodating devices 111 and the number of the heating elements 112 are both multiple, and the accommodating devices 111 and the heating elements 112 correspond one to one.

[0088] The one-to-one correspondence means that each container 111 has a dedicated heating element 112, and the two are equal in number and work together to precisely adapt to meet the personalized heat requirements of the gasification of the raw materials to be separated in a single container 111, thereby ensuring the stability and effectiveness of the operation of each unit.

[0089] Equipped with multiple containing devices 111 and an equal number of heating elements 112, and establish a one-to-one exclusive matching connection. In actual operation, each containing device 111 independently carries different raw materials to be separated (which can be raw materials with different properties and components), and the corresponding heating element 112 independently supplies adaptive heat according to the raw material characteristics and loading volume in the associated containing device 111, ensuring that the gasification operation in each containing device 111 can be carried out in a suitable temperature environment, providing high-quality and stable saturated steam for subsequent plasma generation and element separation processes.

[0090] In some embodiments, see Figure 1 to Figure 2 The ion source 1 includes a support member 14 , and the support member 14 is supported on a side of the accommodating device 111 away from the first opening 1112 .

[0091] The main function of the support member 14 is to carry, fix and maintain other components in a stable spatial position, provide necessary mechanical support, resist the risk of displacement and deformation caused by factors such as deadweight, operation vibration, external interference force, etc., and ensure that the supported object can work normally and safely.

[0092] For example, the support member 14 has adjustment components such as lifting screws and hinges, which can change the support height and tilt angle as needed. In the early stage of equipment installation, the horizontality of the container 111 can be finely calibrated to ensure that the raw materials are evenly heated and gasified; after long-term use, if the foundation ground subsides, etc., it is convenient to re-level; according to different experimental or production process requirements (such as the exhaust direction of saturated steam), the angle of the container 111 can be flexibly adjusted.

[0093] Exemplarily, quick locking structures such as magnetic attraction, slot-block, etc. are designed on the contact surface between the support member 14 and the accommodating device 111, which can be quickly aligned and fixed during installation, and easily released when the accommodating device 111 is disassembled for maintenance or replacement, thereby reducing downtime; and positioning pins are used to ensure that the position accuracy of the accommodating device 111 relative to the support member 14 is constant after each installation to maintain process stability.

[0094] The support member 14 provides solid support for the containing device 111 from the bottom, offsets its own weight and the complex force system generated under operating conditions, maintains a stable spatial posture, prevents uneven distribution of raw materials and imbalance of gasification reaction due to shaking and displacement, ensures stable output of saturated steam, improves the reliability of the front-end gasification link of the element separation system 10, and inputs high-quality material flow for subsequent ionization and separation processes.

[0095] In some embodiments, see Figure 1 to Figure 2 , the support member 14 is made of heat conductive material.

[0096] Thermally conductive materials have excellent thermal conductivity and can transfer heat within themselves quickly and efficiently.

[0097] The heat conducting material is not limited here, and can be, for example, metals such as copper, aluminum, silver, and some non-metallic materials such as high-performance ceramics and graphite. When there is a temperature difference, the heat can diffuse rapidly along the material medium, thereby achieving the effect of heat transfer or uniform distribution.

[0098] The selected material of the support member 14 has excellent thermal conductivity. During the operation of the element separation system 10, the container 111 is in a high temperature state as a whole due to the raw material gasification operation inside (heating is achieved by means of the heating element 112 set on the outer wall). The support member 14, as a component in close contact with the container 111, is made of a thermally conductive material, which can timely guide and dissipate the excess heat on the container 111 to avoid excessive accumulation of heat in the local area of ​​the container 111, thereby stabilizing the temperature field inside the device, ensuring the stable and continuous advancement of the raw material gasification process, and also optimizing and regulating the overall thermal environment of the equipment.

[0099] In some embodiments, see Figure 1 to Figure 2 The lead-out mechanism 13 includes a first lead-out plate 132 and a second lead-out plate 133 spaced apart along a first direction, a fourth opening 1312 is provided on the first lead-out plate 132 , a fifth opening 1313 is provided on the second lead-out plate 133 , and a receiving area 1311 is defined between the first lead-out plate 132 and the second lead-out plate 133 .

[0100] The first lead-out plate 132 cooperates with the second lead-out plate 133 to form a fourth opening 1312 which is an entrance channel for plasma to enter the internal accommodation area 1311 of the lead-out mechanism 13 from the ionization chamber 121 , and cooperate to construct an electric field environment to accelerate the plasma.

[0101] The second lead-out plate 133 is provided with a fifth opening 1313 corresponding to the first lead-out plate 132, and together with the first lead-out plate 132, defines a receiving area 1311, which not only assists in creating a stable electric field, but also provides an exit path for the plasma to leave the lead-out mechanism 13 and enter the vacuum chamber 3 after acceleration, thereby ensuring smooth plasma flow and connecting the previous and next processes.

[0102] The internal space defined by the first lead plate 132 and the second lead plate 133 at an interval forms a containing area 1311. This space is where the electric field is generated and acts. After the plasma enters, it is accelerated by the electric field force. The reasonable design of this area is related to the plasma acceleration effect and energy acquisition, and affects the final element separation effect.

[0103] The first lead-out plate 132 and the second lead-out plate 133 are arranged in sequence along the set first direction, and the two plates are spaced apart to form a containing area 1311. The plasma generated by the ionization chamber 121 flows into the area through the fourth opening 1312 of the first lead-out plate 132, is accelerated by the electric field, and is then output to the vacuum chamber 3 through the fifth opening 1313 of the second lead-out plate 133. Each structure cooperates closely and performs its own function, forming a complete and smooth plasma lead-out acceleration process chain, which meets the plasma state regulation requirements of the element separation system 10.

[0104] In some embodiments, see Figure 1 to Figure 2 The distance between the first lead-out plate 132 and the second lead-out plate 133 is 10 mm-50 mm.

[0105] The specific distance between the first lead-out plate 132 and the second lead-out plate 133 is not limited herein, and may be, for example, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, 40 mm, 45 mm, 50 mm, etc.

[0106] The distance between the first lead-out plate 132 and the second lead-out plate 133 is set within the above range to create the most suitable acceleration space environment for the plasma and shape a specific electric field form and intensity distribution. The plasma is accelerated under the action of the electric field and moves into the vacuum chamber 3 to prepare for subsequent separation.

[0107] In some embodiments, the distance between the fourth opening 1312 and the third opening 1213 is 0 mm-50 mm.

[0108] The specific distance between the fourth opening 1312 and the third opening 1213 is not limited herein, and may be, for example, 0 mm, 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, 30 mm, 35 mm, 40 mm, 45 mm, 50 mm, etc.

[0109] The distance between the fourth opening 1312 and the third opening 1213 is set within the above range to reduce energy loss and turbulent interference during the transfer of plasma from the ionization chamber 121 to the extraction mechanism 13, ensure that the plasma enters the acceleration link in a good "initial state", improve the material flow and energy utilization efficiency of the overall element separation system 10, and lay the foundation for accurate separation.

[0110] In some embodiments, the area of ​​the fifth opening 1313 is smaller than the area of ​​the fourth opening 1312 .

[0111] In some embodiments, the fifth opening 1313 is designed to have the function of electric adjustment or intelligent material adaptation (such as shape memory alloys, electrostrictive polymers to surround the edge of the opening, and the size is controlled according to electrical signals). It can flexibly adjust the area size during system operation according to the real-time flow and energy of the plasma to accurately match different working conditions.

[0112] Plasma flows out of the ionization chamber 121, and the fourth opening 1312 is relatively spacious, allowing more plasma to flow into the accommodating area 1311 of the extraction mechanism 13, and accelerate forward under the drive of the electric field. As the acceleration process progresses, the physical properties such as energy and flow rate change, and when it reaches the second extraction plate 133, it flows out through the smaller fifth opening 1313. This closed-end design is conducive to the aggregation of plasma and prepares for the subsequent plasma output separation.

[0113] In one implementation, see Figure 1 to Figure 2 The receiving panel 21 includes at least two sub-panels, each of which can be used to collect different plasmas.

[0114] The sub-panel is the basic unit of the receiving panel 21, and multiple sub-panels are assembled together to form a complete receiving panel 21 structure. Each sub-panel has the ability to independently collect specific plasmas. According to the different deflection paths and landing points of plasmas in the magnetic field due to differences in element types, each sub-panel is carefully laid out to accurately capture the corresponding plasma and realize the classified collection of multiple different plasmas.

[0115] In some embodiments, step S101 includes the following steps S201 to S2021:

[0116] Step S201, filling different types of raw materials to be separated into a gasification mechanism.

[0117] Step S2021, adjusting the gasification temperature of the gasification mechanism to the maximum gasification temperature among the gasification temperatures of the raw materials to be separated.

[0118] Adjusting the gasification temperature of the gasification mechanism 11 to the maximum gasification temperature among the gasification temperatures of the raw materials to be separated is determined by fully considering that different substances have different gasification characteristics. Since each raw material to be separated has its own unique physical and chemical properties such as chemical bond strength, molecular structure, crystal morphology, etc., it will correspond to a different gasification temperature threshold. Only when this temperature is reached or exceeded can the intermolecular force be overcome to achieve the transition from solid / liquid to gas. The gasification temperature of the gasification mechanism 11 is adjusted to the maximum gasification temperature among the gasification temperatures of the raw materials to be separated, so that all the raw materials to be separated can be gasified, preparing for the subsequent ionization and separation process.

[0119] In some embodiments, step S101 includes the following steps S201 to S2022:

[0120] Step S201, filling different types of raw materials to be separated into a gasification mechanism.

[0121] Step S2022, adjusting the arc voltage of the plasma generating mechanism to the maximum ionization arc voltage among the ionization arc voltages of the raw materials to be separated.

[0122] In a system that uses plasma to separate elements, one of the key conditions for the plasma generation mechanism 12 to generate plasma is to ionize saturated vapor to form plasma by establishing a suitable arc voltage. Different raw materials to be separated have different microscopic physical and chemical properties such as atomic structure, chemical bond energy, and electron affinity, which leads to different energy conditions required to ionize their corresponding saturated vapors. This is reflected in the ionization process as the required ionization arc voltage is high or low. The arc voltage of the plasma generation mechanism 12 is adjusted to the maximum ionization arc voltage among the ionization arc voltages of each raw material to be separated, so that all raw materials to be separated can be ionized, preparing for the subsequent separation process.

[0123] In some embodiments, step S101 includes the following steps S201 to S2023:

[0124] Step S201, filling different types of raw materials to be separated into a gasification mechanism.

[0125] Step S2023, adjusting the current of the plasma generating mechanism to the maximum ionization current among the ionization currents of the raw materials to be separated.

[0126] In the plasma generation process, electric current plays a key role. Ionization current refers to the current passing through the plasma generation mechanism 12 during the ionization process. For different raw materials to be separated, due to their different atomic or molecular structures, their ionization energy (the minimum energy required to ionize atoms or molecules) is different. When the current passes through the plasma generation mechanism 12, it provides the energy required to generate plasma, including ionizing atoms or molecules in saturated vapor and maintaining the plasma state. For example, a larger current means that more electrons participate in energy transfer per unit time, thereby being able to provide sufficient energy to overcome the ionization energy of atoms or molecules of different raw materials. Each raw material to be separated has a corresponding ionization current, and the magnitude of this current is determined based on the minimum current value at which the saturated vapor of the raw material can be effectively ionized. The current of the plasma generation mechanism 12 is adjusted to the maximum ionization current among the ionization currents of each raw material to be separated, so that all raw materials to be separated can be ionized, preparing for the subsequent separation process.

[0127] In some embodiments, the gasification mechanism 11 includes at least two containing devices 111, and step S201 includes the following steps:

[0128] Different kinds of raw materials to be separated are filled in at least two containing devices.

[0129] The containing device 111 is a container structure that directly carries the raw materials to be separated.

[0130] The containing device 111 may be made of various materials depending on different application scenarios and characteristics of the raw materials to be processed, for example, it may be made of high temperature resistant ceramics, stainless steel, and graphite.

[0131] The shape of the container 111 can be a cylindrical container, a rectangular container, etc., to adapt to different equipment space layouts and raw material loading convenience requirements. It must ensure that it can safely and stably accommodate the raw materials, and it must have good thermal conductivity to ensure that the heat from the gasification mechanism 11 is efficiently transferred to the raw materials to promote the gasification process. At the same time, it must have a certain chemical stability to prevent chemical reactions with the raw materials from causing raw material contamination or equipment damage.

[0132] Based on the difference in the types of raw materials, different raw materials to be separated are filled into corresponding respective containing devices 111, which can effectively avoid mutual interference of different raw materials in the same space due to their different characteristics, thereby ensuring gasification efficiency and steam purity. For example, when processing raw materials to be separated containing a mixture of metal elements, metal compounds, etc., metal element raw materials can be placed in a containing device 111. With its good thermal conductivity and stability, by setting a suitable high temperature and inert atmosphere, the metal element is efficiently gasified. The metal compound raw material can be loaded into another containing device 111, so that targeted gasification treatment can be carried out according to the characteristics of the metal compound, reducing mutual interference between different raw materials.

[0133] In some embodiments, see Figure 1 to Figure 2 The gasification mechanism 11 includes a containing device 111, and step S201 includes the following steps:

[0134] At least two of the raw materials to be separated are fused into an alloy.

[0135] When at least two raw materials to be separated are made into an alloy, different elements will interact with each other through chemical bonds, metallic bonds, etc. to form an ordered or disordered crystal structure. As a result, the physical and chemical properties of the alloy are significantly different from those of the pure elemental raw materials that compose it. In this process, by fusing at least two raw materials to be separated to form an alloy, the melting point of the raw materials to be separated can be effectively lowered.

[0136] The alloy is placed in the containment device.

[0137] By fusing at least two raw materials to be separated into an alloy to lower their melting points, it has many important significances. On the one hand, it enables the raw materials to be separated that originally have a higher melting point to be gasified in the gasification mechanism 11 with relatively low heating capacity. In this way, the application scope of the gasification mechanism 11 is greatly expanded, and raw materials that cannot be processed in the conventional gasification mechanism 11 due to their high melting point can also be gasified. On the other hand, from the perspective of manufacturing cost, there is no need to blindly pursue high heating capacity in order to adapt to high melting point raw materials, thereby reducing the manufacturing cost of the gasification mechanism 11. It is not necessary to equip complex and expensive components such as ultra-high temperature heating elements and high-power heating systems, which simplifies the manufacturing process and reduces cost investment.

[0138] In some embodiments, see Figure 1 to Figure 2 , the ratio of the relative element masses of each raw material to be separated is greater than or equal to 0.9 and less than or equal to 1.1.

[0139] The specific ratios of the relative element masses of each raw material to be separated vary within this specific range, for example, they can be 0.91, 0.92, 0.93, 0.94, 0.95, 0.96, 0.97, 0.98, 0.99, 1.00, 1.01, 1.02, 1.03, 1.04, 1.05, 1.06, 1.07, 1.08, 1.09, 1.1 and the like.

[0140] It should be noted that the ratio of the relative elemental masses of the raw materials to be separated mentioned here refers to the relative elemental mass ratio between any two raw materials to be separated. It can be the ratio of the raw material to be separated with a larger relative elemental mass to the raw material to be separated with a smaller relative elemental mass, or it can be the ratio of the raw material to be separated with a smaller relative elemental mass to the raw material to be separated with a larger relative elemental mass.

[0141] This ratio limit is set to standardize and quantify the mass relationship of the elements that make up the raw materials. When the relative element mass ratio of the raw materials to be separated is within the above range, the relative element masses of the different key elements within it are in a relatively close and balanced state, with extremely small differences. When the relative element masses are close, the differences in the physical and chemical properties of the elements in the subsequent separation processes such as gasification, ionization, and plasma manipulation are relatively small, and they can be processed with relatively uniform process parameters, reducing the need to frequently adjust equipment parameters due to large differences in elemental properties, thereby making the separation operation more stable and efficient, and reducing the complexity and uncertainty of the operation.

[0142] In some embodiments, see Figure 1 to Figure 2 , the difference in ionization arc voltage of each raw material to be separated is greater than or equal to -1000V and less than or equal to 1000V.

[0143] The specific difference in ionization arc voltage of each raw material to be separated is not limited here, for example, it can be -1000V, -900V, -800V, -700V, -600V, -500V, -400V, -300V, -200V, -100V, 0V, 100V, 200V, 300V, 400V, 500V, 600V, 700V, 800V, 900V, 1000V, etc.

[0144] It should be noted that the difference in ionization arc voltage of each raw material to be separated mentioned here refers to the difference in ionization arc voltage between any two raw materials to be separated. It can be the difference between the raw material to be separated with a larger ionization arc voltage and the raw material to be separated with a smaller ionization arc voltage, or it can be the difference between the raw material to be separated with a smaller ionization arc voltage and the raw material to be separated with a larger ionization arc voltage.

[0145] By limiting the quantitative difference of the ionization arc voltage of different raw materials to be separated within the above range, it means that the absolute value of the maximum difference between the ionization arc voltages of any two raw materials to be separated is 1000V. On the one hand, it enables different raw materials to use more common equipment and process parameters in the ionization process, reducing the complexity and cost of the equipment. For example, there is no need to design a customized ionization device for each raw material with a special ionization arc voltage. Instead, a set of optimized universal ionization equipment can be used to process a variety of raw materials, improving the utilization and economy of the equipment. On the other hand, similar ionization characteristics help to improve the stability and repeatability of the separation process. In the subsequent plasma generation and element separation links, since the ionization state of the raw materials is relatively close, the energy distribution and motion trajectory of the ions are easier to predict and control, reducing the separation deviation and impurity mixing caused by ionization differences, thereby significantly improving the separation purity and yield of the target element, shortening the batch processing cycle, and better meeting the needs of large-scale industrial efficient production.

[0146] In some embodiments, see Figure 1 to Figure 2 , the difference between the ionization currents of the raw materials to be separated is greater than or equal to -500A and less than or equal to 500A.

[0147] The specific difference in ionization current of each raw material to be separated is not limited here, for example, it can be -500A, -400A, -300A, -200A, -100A, 0A, 100A, 200A, 300A, 400A, 500A, etc.

[0148] It should be noted that the difference in ionization current of each raw material to be separated mentioned here refers to the difference in ionization current between any two raw materials to be separated. It can be the difference between a raw material to be separated with a larger ionization current and a raw material to be separated with a smaller ionization current, or it can be the difference between a raw material to be separated with a smaller ionization current and a raw material to be separated with a larger ionization current.

[0149] By limiting the quantitative difference of the ionization current of different raw materials to be separated within the above range, it means that the absolute value of the maximum difference between the ionization currents of any two raw materials to be separated is 500A. In this way, the difference in the current required for ionization of each raw material is effectively controlled within a specific range, thereby ensuring that the overall ionization characteristics of the raw material system have a certain similarity and consistency. Such a design is conducive to the subsequent use of a unified and standardized process for processing. When the ionization characteristics of the raw materials are relatively similar, the same or similar equipment parameters and process flow can be used during the plasma generation process, without the need to customize complex ionization devices and processes for each raw material, reducing equipment costs and operating difficulties. At the same time, similar ionization characteristics also help to improve the stability and repeatability of the separation process, reduce separation deviations and impurity mixing caused by ionization differences, improve the separation purity and yield of the target element, and better meet the needs of large-scale industrial production.

[0150] In some embodiments, see Figure 1 to Figure 2 The receiving device 2 includes a current detector, which is arranged on the receiving panel 21.

[0151] The current detector is an instrument that can measure the magnitude and change of the current in the circuit. The current detector is set on the receiving panel 21 and is specifically used to detect the relevant parameters of the current on the receiving panel 21. Its working principle is usually based on physical phenomena such as electromagnetic induction. It determines the magnitude, direction and whether there is an offset of the current through the magnetic field or other related physical effects generated by the induced current, providing data basis for subsequent control operations.

[0152] Controlling the receiving panel 21 to collect plasma includes the following steps S301 to S303:

[0153] Step S3.

[0154] The current detector is controlled to detect the current offset on the receiving panel 21, and the current change of the receiving panel 21 in the process of interaction with the plasma is obtained in real time. The change of current may reflect the influence of various factors such as the distribution and energy state of the plasma. By accurately detecting the current offset, key data support can be provided for subsequent judgment of whether the collection process is normal and whether adjustment is required.

[0155] Step S302: If the current offset is not within the deviation error range, the current offset is reduced by adjusting the arc voltage and current of the plasma generating mechanism.

[0156] It is found that the current offset is not within the pre-set deviation error range, which means that the current state of the plasma collected by the receiving panel 21 may be greatly affected, resulting in the current being offset beyond the normal fluctuation range. At this time, it is necessary to try to reduce the current offset by adjusting the arc voltage and current of the plasma generating mechanism 12. The characteristics of the plasma generated by the plasma generating mechanism 12 (such as density, energy, etc.) are closely related to the arc voltage and current. By properly adjusting these parameters, the state of the plasma can be changed, thereby affecting the current on the receiving panel 21, so that it can be restored to the normal error range as much as possible to ensure the smooth progress of the collection work.

[0157] Step S303: if the current offset is within the deviation error range, the plasma is collected through the receiving panel.

[0158] After detection and judgment, when the current offset is within the deviation error range, it means that the current state of the receiving panel 21 collecting plasma basically meets the requirements, and the plasma can be normally collected through the receiving panel 21. This step ensures that the plasma collection operation is performed only when the collection conditions are relatively stable and meet expectations, which helps to improve the quality of the collected plasma and the accuracy of subsequent processing.

[0159] In some embodiments, see Figure 1 to Figure 2 The deviation error is that under a certain flow rate intensity, the difference between the maximum and minimum current is no more than 2A.

[0160] The deviation error is a quantitative indicator to measure the stability of the current on the receiving panel 21. Specifically, it is the difference range between the maximum and minimum current values ​​allowed under specific flow rate intensity setting conditions, which is used to define the normal fluctuation limit of the current. If it exceeds this range, it is considered that the current has an abnormal deviation and needs to adjust the plasma generation related parameters to correct it.

[0161] Flow velocity intensity refers to the comprehensive intensity characterization of the flow velocity of plasma when it flows through the surrounding area of ​​the receiving panel 21 or a specific position of the entire system and its corresponding energy, density, etc. Different flow velocity intensities will affect the degree of interaction between the plasma and the receiving panel 21.

[0162] The maximum and minimum current values ​​refer to the current flowing through the receiving panel 21. During the continuous plasma collection process, the current fluctuates dynamically due to interference from various internal and external factors. The highest current value during the period is the maximum current value. Correspondingly, the lowest current value reached during the fluctuation process is the minimum current value. The difference between the two must meet the deviation error setting specification to ensure a smooth collection process.

[0163] The difference between the maximum and minimum values ​​of the current is no more than 2A, for example, it may be 0A, 1.1A, 1.2A, 1.3A, 1.4A, 1.5A, 1.6A, 1.7A, 1.8A, 1.9A, 2A, etc.

[0164] Limit the deviation error to within 2A to ensure the current of the receiving panel 21 is stable, avoid uneven plasma collection and partial ion escape due to large current fluctuations, ensure the collection process is consistent and efficient, and improve the total amount and purity of collection. At the same time, standardize the relationship between flow rate intensity and current, reduce the system's sensitivity to complex working conditions, and coordinate various components according to settings to reduce failures.

[0165] This application embodiment provides a kind of Figure 1 to Figure 2 , the receiving panel collects the plasma including:

[0166] The distance between the receiving panel and the outlet is adjusted so that the current detector can detect the current generated by the plasma.

[0167] The current detector can detect the current generated by the plasma, indicating that the receiving panel 21 is in the correct position to receive the plasma.

[0168] When the receiving panel 21 is used to collect plasma, the core operation is to accurately adjust the distance between the receiving panel 21 and the outlet. In actual operation, due to factors such as the different types of elements to be separated, different electric field strengths, and different magnetic field strengths, the position where the plasma reaches the receiving device 2 will change. By reasonably adjusting the distance between the receiving panel 21 and the outlet, it can be ensured that the plasma can accurately reach the receiving panel 21 and be collected by it under different working conditions. By accurately adjusting this distance, the outflow state of the plasma can be better adapted to ensure that high-concentration, high-energy plasma is efficiently captured by the receiving panel 21, thereby reducing the escape loss.

[0169] Specifically, different elements to be separated have different physical and chemical properties, and in the plasma state, the effects of the electric field and magnetic field on them are also different. For example, the ions of certain elements may have a higher migration speed and a specific motion trajectory under a specific combination of electric and magnetic fields, which will affect the position where the plasma finally reaches the receiving device 2. The change in the size of the electric and magnetic fields will also change the motion state of the ions in the plasma, causing the position where they reach the receiving device 2 to fluctuate. By flexibly adjusting the distance between the receiving panel 21 and the outlet, it can be optimized for different working conditions, so that the receiving panel 21 can always be in the best collection position, maximizing the collection efficiency of the plasma. At the same time, reducing the fugitive loss not only helps to increase the collection amount of the target element, but also reduces the potential impact on the surrounding environment, and improves the environmental protection and sustainability of the entire separation process.

[0170] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application are included in the protection scope of the present application.

Claims

1. An element separation method, applied to an element separation system, characterized in that: The element separation system comprises an ion source, a vacuum chamber and a receiving device; the ion source comprises a gasification mechanism, a plasma generation mechanism and an extraction mechanism, the plasma generation mechanism comprises an ionization chamber, the extraction mechanism comprises an electric field generator, and the vacuum chamber comprises a magnetic field generator; the receiving device comprises a receiving panel, and the outlet of the extraction mechanism and the receiving panel are arranged in the vacuum chamber at intervals; The element separation method comprises: Filling the raw materials to be separated into the gasification mechanism; Controlling the gasification mechanism to gasify the raw material to be separated to form saturated vapor; Controlling the saturated vapor to enter the ionization chamber, controlling the ionization chamber to emit electrons, and ionizing the saturated vapor to form plasma; Controlling the electric field generator to generate an electric field, accelerating the plasma in the electric field, and controlling the plasma to be ejected from the outlet into the vacuum chamber; Controlling the magnetic field generator to generate a magnetic field, applying a deflection force to the plasma in the magnetic field, and controlling the plasma to be ejected toward the receiving panel; The receiving panel is controlled to collect the plasma, wherein the receiving panel can be used to collect at least two different plasmas.

2. The element separation method according to claim 1, characterized in that: The filling of the raw materials to be separated in the gasification mechanism comprises: Filling different types of raw materials to be separated in the gasification mechanism; adjusting the gasification temperature of the gasification mechanism to the maximum gasification temperature among the gasification temperatures of the raw materials to be separated; and / or, adjusting the arc voltage of the plasma generating mechanism to the maximum ionization arc voltage among the ionization arc voltages of the raw materials to be separated; and / or, The current of the plasma generating mechanism is adjusted to a maximum ionization current among the ionization currents of the respective raw materials to be separated.

3. The element separation method according to claim 2, characterized in that: The gasification mechanism comprises at least two containing devices, and the different types of raw materials to be separated are filled in the gasification mechanism and include: Different kinds of raw materials to be separated are filled in the at least two containing devices.

4. The element separation method according to claim 2, characterized in that: The gasification mechanism includes a containing device, and the different types of raw materials to be separated are filled in the gasification mechanism and include: fusing at least two of the raw materials to be separated into an alloy; The alloy is placed in the containment device.

5. The element separation method according to claim 2, characterized in that: The ratio of the relative element masses of the raw materials to be separated is greater than or equal to 0.9 and less than or equal to 1.

1.

6. The element separation method according to claim 2, characterized in that: The difference in ionization arc voltage of each of the raw materials to be separated is greater than or equal to -1000V and less than or equal to 1000V.

7. The element separation method according to claim 2, characterized in that: The difference between the ionization currents of the raw materials to be separated is greater than or equal to -500A and less than or equal to 500A.

8. The element separation method according to claim 1, characterized in that: The receiving device includes a current detector, and the current detector is arranged on the receiving panel. The controlling the receiving panel to collect the plasma includes: Controlling the current detector to detect the current offset on the receiving panel; If the current offset is not within the deviation error range, reducing the current offset by adjusting the arc voltage and current of the plasma generating mechanism; If the current offset is within the deviation error range, the plasma is collected by the receiving panel.

9. The element separation method according to claim 8, characterized in that: The deviation error means that under a flow rate intensity, the difference between the maximum value and the minimum value of the current is not greater than 2A.

10. The element separation method according to claim 8, characterized in that: The receiving panel collecting the plasma comprises: The distance between the receiving panel and the outlet is adjusted so that the current detector can detect the current generated by the plasma.

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