Atomic-level construction method of fixed-axis molecular rotors and their arrays on semiconductor substrate surfaces

Abstract

This invention discloses an atomic-level construction method for a fixed-axis molecular rotor and its array on a semiconductor substrate. Metal atoms and phthalocyanine molecules are deposited on the semiconductor substrate surface using an ultra-high vacuum thermal evaporation method. The phthalocyanine molecules are laterally manipulated using a scanning tunneling microscope (STM) to place them onto the surface-adsorbed metal atoms. The metal atoms are then longitudinally manipulated using the STM to place them onto the phthalocyanine molecules, resulting in a metal atom-phthalocyanine molecule-metal atom fixed-axis molecular rotor composite structure. The rotation and control of the molecular rotor are achieved by applying a gate voltage to regulate the local potential. This method achieves atomic-level precise anchoring of the molecular rotor composite structure and realizes the rotor array arrangement. The rotation speed is controlled by regulating the local potential through the gate voltage of pre-embedded electrodes. By precisely designing the molecular rotor array using individual atoms and molecules as basic units, the problem of the inability to reposition and arrange molecular structures is solved.

Description

Technical Field

[0001] This invention belongs to the field of atomic-level manufacturing of molecular machines, and relates to a method for constructing a fixed-axis molecular rotor and its array with controllable rotation function at the atomic level on the surface of a semiconductor substrate. Background Technology

[0002] Artificial molecular rotors / motors are important components of molecular machines, with broad application prospects in fields such as storage, smart materials, medicine, and catalysis. Currently, the first batch of molecular machines have been synthesized in solution using chemical synthesis methods. However, on solid surfaces, due to substrate limitations and chemical design requirements, achieving precise construction and manipulation of molecular machines becomes much more complex. For molecular rotors, high-level control of the rotation axis and self-assembly are key factors in integrating molecular rotors into complex molecular machines.

[0003] Currently, these molecular rotors are mainly prepared by organic synthesis of precursors in solution, and then formed on the substrate surface through thermodynamic molecular self-assembly. For example, Liang Wenjuan et al. from Shanxi Datong University disclosed a method for preparing molecular rotors in patent CN202110736882.8, "3'-acetyl-[2,2'-dithiophene]-3-carboxaldehyde and its preparation method and application," and Zhen Shijie et al. from Guilin University of Technology disclosed a method for achieving molecular anchoring in patent CN202311703323.2, "A novel spatially conjugated organic molecule based on a hexaphenylbenzene anchoring group and its preparation and application." The drawbacks are that the synthesized products are accompanied by byproducts, and the atomically precise anchoring and construction on the substrate surface cannot be achieved. Furthermore, the directional movement of simple metal atoms and molecules on metal surfaces has been achieved using the tip of a scanning tunneling microscope. An Yang et al. from the Institute of Physics, Chinese Academy of Sciences, described the directional movement of CO molecules on a copper surface in patent CN202011524830.6, "A Method and System for Atom / Molecular Transport." However, this method has the drawback of not being able to achieve longitudinal assembly, thus preventing the construction of molecular structures with rotational functions. To achieve molecular structures with specific functions, different strategies are needed for designing the molecular structure. Among these, restricting lateral diffusion of molecules and establishing a stable rotation axis are necessary conditions for achieving molecular rotation, while weak adsorption between molecules and the substrate is a prerequisite for repositioning molecules to form an array. Currently, substrate defects and molecular-substrate bonding can be used as rotation axes, but these axes are fixed and cannot be repositioned. Therefore, simultaneously achieving fixed-axis rotation of molecules and the precise construction of molecular rotor arrays remains a challenge.

[0004] To address these issues, this invention proposes an atomic-level construction method for fixed-axis molecular rotors and their arrays on the surface of semiconductor substrates. Summary of the Invention

[0005] To address the aforementioned deficiencies in the existing technology, the present invention aims to provide an atomic-level construction method for a fixed-axis molecular rotor and its array on a semiconductor substrate surface. Based on single-atom / molecule manipulation technology, metal atoms and phthalocyanine molecules are artificially and controllably assembled, and the fixed-axis molecular rotor is anchored by utilizing the natural metal vacancies on the surface of a III-V group semiconductor substrate, thereby achieving atomic-level precise construction of the fixed-axis molecular rotor and its array.

[0006] The present invention is achieved through the following technical solution.

[0007] This invention provides an atomic-level construction method for fixed-axis molecular rotors and their arrays on a semiconductor substrate surface, comprising:

[0008] Atomic-level clean surfaces are obtained by cleaving III-V group semiconductor substrates in ultra-high vacuum.

[0009] Metal atoms and phthalocyanine molecules were deposited on the surface of a semiconductor substrate using an ultra-high vacuum thermal evaporation method.

[0010] The surface morphology of the sample was obtained by scanning the sample with a scanning tunneling microscope.

[0011] Identify the positions of adsorbed metal atoms and phthalocyanine molecules on the surface of the semiconductor substrate based on the surface morphology diagram;

[0012] The phthalocyanine molecules were manipulated laterally using the tip of a scanning tunneling microscope, and placed onto the metal atoms adsorbed on the surface to form a metal atom-phthalocyanine molecule structure.

[0013] By using the tip of a scanning tunneling microscope to manipulate another metal atom longitudinally, another metal atom is placed on a phthalocyanine molecule, resulting in a metal atom-phthalocyanine molecule-metal atom fixed-axis molecule rotor composite structure;

[0014] The rotation and control of the molecular rotor are achieved by applying a gate voltage to regulate the local potential; the molecular rotor signal output is achieved by setting source and drain electrodes at both ends of the molecular rotor.

[0015] Preferably, group III-V semiconductors include InAs, GaAs, InSb, or GaSb.

[0016] Preferably, the metal atoms include K, Na, Rb, Ga, In, or Cs.

[0017] Preferably, the phthalocyanine molecule includes the lanthanide bisphthalocyanine complex LnPC2, wherein Ln = La / Ce / Pr / Nd / Pm / Sm / Eu / Gd / Tb / Dy / Ho / Er / Tm / Yb / Lu.

[0018] Preferably, the surface of a III-V semiconductor has metal vacancies with naturally reconstructed structures, and the grown metal atoms are mainly attached to the metal vacancies of the III-V semiconductor.

[0019] Preferably, the scanning tunneling microscope and its tip operate in an ultra-high vacuum environment with a pressure not exceeding 10. -7 Pa; sample temperature not higher than 4.5K.

[0020] As a preferred method, for lateral manipulation of phthalocyanine molecules, the sample is subjected to a bias voltage of -0.5 to -0.8V and a tunneling current of 0.2 to 0.6nA. The needle tip moves from the top of the phthalocyanine molecule to the top of the metal atom to achieve lateral manipulation of the molecule.

[0021] Preferably, the metal atoms are manipulated vertically by lifting them with a bias voltage of +1V to +1.3V, bringing the needle tip above the phthalocyanine molecule, and then releasing the metal atoms with a bias voltage of -1V to -1.3V.

[0022] Preferably, the gate voltage is ±0.8V to ±1.5V.

[0023] Preferably, the bottom gate electrode is made of gold electrode and silicon oxide layer, and the source and drain electrodes are made of gold electrode, located on the surface of group III-V semiconductor, close to both sides of the molecular rotor.

[0024] The present invention, by adopting the above technical solution, has the following beneficial effects:

[0025] 1. The fixed-axis molecular rotor structure described in this invention is simple, involving only a single molecule and two atoms. Precise anchoring of the molecular rotor can be achieved through the diffusion barrier of the metal atoms created by the natural metal vacancies in the substrate. Furthermore, the rotation of the fixed-axis molecular rotor can be controlled and adjusted using a pre-embedded gate voltage.

[0026] 2. The present invention selects to realize the assembly of fixed-axis molecular rotors on a III-V group semiconductor substrate, which is compatible with semiconductor processes, has higher application value, and is conducive to the integration of functional devices.

[0027] 3. This invention deposits metal atoms and phthalocyanine molecules through vapor deposition, breaking through the traditional chemical synthesis method. Based on scanning tunneling microscopy, atomic and molecular manipulation can achieve precise assembly and reversible disassembly of molecular rotors at the atomic level, as well as precise positioning of molecular rotors to design arbitrary molecular rotor arrays. It has a larger controllable space and has important advantages in the manufacture of molecular rotors and molecular machines. It also has important research value in the fields of molecular switches, molecular storage, and molecular carriers. Attached Figure Description

[0028] The accompanying drawings, which are included to provide a further understanding of the invention and form part of this application, do not constitute an undue limitation of the invention. In the drawings:

[0029] Figure 1 A schematic diagram of the three-dimensional structure of a fixed-axis molecular rotor;

[0030] Figures 2(a)-(i) show the manufacturing process flow of the fixed-axis molecular rotor and array;

[0031] Figure 3 Scanning tunneling microscopy morphology of In atoms and LaPc2 molecules on an InAs substrate for Example 1;

[0032] Figure 4 Scanning tunneling microscope image of the In-LaPc2 composite structure on an InAs substrate for Example 1;

[0033] Figure 5 Scanning tunneling microscope image of the In-LaPc2-In composite structure assembled on an InAs substrate to implement Example 1;

[0034] Figure 6 The output It image shows the application of a gate voltage to an In-LaPc2-In molecular rotor on an InAs substrate to implement Example 1;

[0035] Figure 7 Scanning tunneling microscopy image of three LaPc2 molecular anchoring arrays realized on an InAs substrate to implement Example 1. Detailed Implementation

[0036] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. The illustrative embodiments and descriptions of the present invention are used to explain the present invention, but are not intended to limit the present invention.

[0037] This invention provides an atomic-level construction method for fixed-axis molecular rotors and their arrays on a semiconductor substrate surface, the specific steps of which are as follows:

[0038] Step 1: Select a III-V semiconductor substrate with an atomically clean surface obtained by ultra-high vacuum cleavage. The III-V semiconductor includes InAs, GaAs, InSb or GaSb. A bottom gate is provided under the substrate, as shown in Figure 2(a).

[0039] Step 2: Metal atoms, including K, Na, Rb, Ga, In, or Cs, are deposited on the surface of the semiconductor substrate using an ultra-high vacuum thermal evaporation method. The surface of group III-V semiconductors contains metal vacancies with naturally reconstructed structures. The metal atoms are distributed on top of these vacancies in the semiconductor substrate. The metal atoms and the natural metal vacancies on the surface of the group III-V semiconductor are physically adsorbed, but possess a high diffusion barrier, making them difficult to translate due to minor perturbations. See Figure 2(b).

[0040] Step 3: Continue to deposit phthalocyanine molecules on the surface of the semiconductor substrate using the ultra-high vacuum thermal evaporation method. The phthalocyanine molecules are randomly distributed on the surface of the III-V group semiconductor and are unstable and easily translated by micro-perturbations, as shown in Figure 2(c).

[0041] Phthalocyanine molecules include lanthanide bisphthalocyanine complexes LnPC2, where Ln = La / Ce / Pr / Nd / Pm / Sm / Eu / Gd / Tb / Dy / Ho / Er / Tm / Yb / Lu.

[0042] Step 4: Scan the sample using a scanning tunneling microscope (STM) with a tungsten tip. The STM and its tip operate in an ultra-high vacuum environment: pressure not exceeding 10. -7 Pa; sample temperature not exceeding 4.5 K. Surface morphology images were obtained by scanning, revealing the positions of metal atoms and phthalocyanine molecules on the semiconductor substrate surface.

[0043] Step 5: The phthalocyanine molecules are laterally manipulated using a tungsten tip electrochemically etched by a scanning tunneling microscope. The tip is grounded, and a bias voltage of -0.5 to -0.8V is applied to the semiconductor substrate. The tunneling current is 0.2 to 0.6nA. The tungsten tip of the scanning tunneling microscope is moved to the top of the phthalocyanine molecule, as shown in Figure 2(d).

[0044] Step 6: Move the scanning tunneling microscope tip from the top of the phthalocyanine molecule to the top of the metal atom to achieve lateral manipulation of the molecule. Place the phthalocyanine molecule onto the metal atom adsorbed on the surface for assembly, which will anchor the phthalocyanine molecule with atomic-level precision, forming a metal atom-phthalocyanine molecule structure, as shown in Figure 2(e).

[0045] Step 7: Using the tip of a scanning tunneling microscope, manipulate another metal atom longitudinally. Position the tip above the metal atom and apply a bias voltage of +1V to +1.3V to lift the metal atom from the semiconductor substrate, as shown in Figure 2(f).

[0046] Step 8: Move the scanning tunneling microscope tip above the phthalocyanine molecule, apply a bias voltage of -1V to -1.3V to the semiconductor substrate to release the metal atom, and place another metal atom on the phthalocyanine molecule to obtain a metal atom-phthalocyanine molecule-metal atom fixed-axis molecular rotor, as shown in Figure 2(g).

[0047] The prepared metal atom-phthalocyanine molecule-metal atom composite structure can be reversibly disassembled.

[0048] Step 9: By applying a gate voltage of ±0.8V to ±1.5V to the bottom gate of the semiconductor substrate, the local potential is adjusted. Under the gate voltage, the start and stop of the fixed-axis molecular rotor can be controlled, as well as the rotation frequency can be adjusted, thus realizing the rotation and control of the fixed-axis molecular rotor. Source and drain electrodes are provided at both ends of the molecular rotor to realize the molecular rotor signal output, as shown in Figure 2(h).

[0049] The source and drain electrodes are made of gold and are located on the surface of a III-V group semiconductor, near both sides of the molecular rotor. The bottom gate electrode is made of gold and a silicon oxide layer. The three-dimensional structure of the fixed-axis molecular rotor is shown in [Figure number missing]. Figure 1 .

[0050] Step 10: Repeat steps 3-8 above to assemble multiple fixed-axis molecular rotor arrays, as shown in Figure 2(i).

[0051] The following different embodiments further illustrate the preparation of the fixed-axis molecular rotor and its array of the present invention.

[0052] Example 1

[0053] 1) A III-V group semiconductor substrate with an atomically clean surface obtained by ultra-high vacuum cleavage was selected as InAs, and a bottom gate was provided under the substrate.

[0054] 2) Metal atoms In are deposited on the surface of a semiconductor substrate by ultra-high vacuum thermal evaporation, and the In atoms are distributed on top of the metal vacancies in the InAs substrate.

[0055] 3) Continue to deposit phthalocyanine molecules LaPc2 on the surface of the semiconductor substrate using the ultra-high vacuum thermal evaporation method. The LaPc2 molecules are randomly distributed on the surface of the InAs substrate.

[0056] 4) Scan the sample using a scanning tunneling microscope with a tungsten needle tip, under ultra-high vacuum: pressure not exceeding 10. -7 Pa; sample temperature not exceeding 4.5 K. Surface morphology images were obtained, showing the positions of In atoms and LaPc2 molecules on the InAs substrate surface, see [reference needed]. Figure 3 .

[0057] 5) The phthalocyanine molecule was manipulated laterally using the tip of a scanning tunneling microscope. The tip was grounded, a bias voltage of -0.5V was applied to the InAs substrate, and the tunneling current was 0.2nA. ​​The tungsten tip of the scanning tunneling microscope was placed on the top of the LaPc2 molecule.

[0058] 6) The scanning tunneling microscope tip is moved from the top of the LaPc2 molecule to the top of the In atom to achieve lateral molecular manipulation. The LaPc2 molecule is then placed onto the surface-adsorbed In atoms for assembly, forming an In-LaPc2 composite structure. (See...) Figure 4 .

[0059] 7) Using a scanning tunneling microscope tip, another In atom is manipulated longitudinally. The tip is positioned above the metal atom, and a bias voltage of +1.2V is applied to the InAs substrate to lift the In atom.

[0060] 8) Move the scanning tunneling microscope tip above the LaPc2 molecule, apply a bias voltage of -1.1V to the InAs substrate to release In atoms, and place another In atom on the LaPc2 molecule to obtain an In-LaPc2-In fixed-axis molecular rotor. See [link to documentation]. Figure 5 .

[0061] 9) By applying a +0.8V gate voltage to the bottom gate of the semiconductor substrate to control the local potential, the rotation and control of the fixed-axis molecular rotor in step 8 are achieved. Source and drain electrodes are provided at both ends of the molecular rotor to achieve the molecular rotor It signal output, see [link to documentation]. Figure 6 .

[0062] 10) Repeat steps 3-8 above three times to assemble three In-LaPc2-In fixed-axis molecular rotor arrays, see... Figure 7 .

[0063] Example 2

[0064] 1) A group III-V semiconductor substrate with an atomically clean surface obtained by ultra-high vacuum cleavage was selected as GaAs, and a bottom gate was provided under the substrate.

[0065] 2) Metal atoms Cs are deposited on the surface of a semiconductor substrate by ultra-high vacuum thermal evaporation, and the Cs atoms are distributed on top of the metal vacancies in the GaAs substrate.

[0066] 3) Continue to deposit phthalocyanine molecules DyPc2 on the surface of the semiconductor substrate using the ultra-high vacuum thermal evaporation method. The DyPc2 molecules are randomly distributed on the surface of the GaAs substrate.

[0067] 4) Scan the sample using a scanning tunneling microscope with a tungsten needle tip, under ultra-high vacuum: pressure not exceeding 10. -7 Pa; sample temperature not exceeding 4.5 K. Surface morphology images were obtained, revealing the positions of Cs atoms and DyPc2 molecules on the GaAs substrate surface.

[0068] 5) Laterally manipulate phthalocyanine molecules using the tip of a scanning tunneling microscope. With the tip grounded, apply a -0.6V bias voltage to the GaAs substrate and a tunneling current of 0.3nA. Place the tungsten tip of the scanning tunneling microscope on the top of the DyPc2 molecule.

[0069] 6) The scanning tunneling microscope tip is moved from the top of the DyPc2 molecule to the top of the Cs atom to achieve lateral manipulation of the molecule. The DyPc2 molecule is then placed on the surface-adsorbed Cs atoms for assembly, forming a Cs-DyPc2 composite structure.

[0070] 7) Using a scanning tunneling microscope tip, another Cs atom is manipulated longitudinally with the tip positioned above the metal atom. A bias voltage of +1.3V is applied to the GaAs substrate to lift the Cs atom.

[0071] 8) Move the scanning tunneling microscope tip above the DyPc2 molecule, apply a bias voltage of -1.2V to the GaAs substrate to release Cs atoms, place another Cs atom on the DyPc2 molecule, and obtain a Cs-DyPc2-Cs fixed-axis molecular rotor.

[0072] 9) By applying a gate voltage of ±1.0V to the bottom gate of the semiconductor substrate, the local potential is controlled to achieve the rotation and control of the fixed-axis molecular rotor in step 8. Source and drain electrodes are provided at both ends of the molecular rotor to achieve the It signal output of the molecular rotor.

[0073] 10) Repeat steps 3-8 above 3 times to assemble 3 Cs-DyPc2-Cs fixed-axis molecular rotor arrays.

[0074] Example 3

[0075] 1) The InSb semiconductor substrate, which has been cleaved in ultra-high vacuum to obtain an atomically clean surface, is selected, and a bottom gate is provided under the substrate.

[0076] 2) Metal atoms Rb are deposited on the surface of a semiconductor substrate by ultra-high vacuum thermal evaporation. The Rb atoms are distributed on top of the metal vacancies in the InSb substrate.

[0077] 3) Continue to deposit phthalocyanine molecules NdPc2 on the surface of the semiconductor substrate using the ultra-high vacuum thermal evaporation method. The NdPc2 molecules are randomly distributed on the surface of the InSb substrate.

[0078] 4) Scan the sample using a scanning tunneling microscope with a tungsten needle tip, under ultra-high vacuum: pressure not exceeding 10. -7 Pa; sample temperature not exceeding 4.5 K. Surface morphology images were obtained, revealing the positions of Rb atoms and NdPc2 molecules on the InSb substrate surface.

[0079] 5) The phthalocyanine molecule was manipulated laterally using the tip of a scanning tunneling microscope. The tip was grounded, a bias voltage of -0.7V was applied to the InSb substrate, and the tunneling current was 0.6nA. The tungsten tip of the scanning tunneling microscope was placed on the top of the NdPc2 molecule.

[0080] 6) The scanning tunneling microscope tip is moved from the top of the NdPc2 molecule to the top of the Rb atom to achieve lateral manipulation of the molecule. The NdPc2 molecule is then placed on the Rb atoms adsorbed on the surface for assembly, forming an Rb-NdPc2 composite structure.

[0081] 7) Using a scanning tunneling microscope tip, another Rb atom is manipulated longitudinally with the tip positioned above the metal atom. A bias voltage of +1.1V is applied to the InSb substrate to lift the Rb atom.

[0082] 8) Move the scanning tunneling microscope tip above the NdPc2 molecule, apply a bias voltage of -1.0V to the InSb substrate to release Rb atoms, place another Rb atom on the NdPc2 molecule, and obtain the Rb-NdPc2-Rb fixed-axis molecular rotor.

[0083] 9) By applying a gate voltage of ±1.2V to the bottom gate of the semiconductor substrate to regulate the local potential, the rotation and regulation of the fixed-axis molecular rotor in step 8 are realized. Source and drain electrodes are provided at both ends of the molecular rotor to realize the molecular rotor It signal output.

[0084] 10) Repeat steps 3-8 above 3 times to assemble 3 Rb-NdPc2-Rb fixed-axis molecular rotor arrays.

[0085] Example 4

[0086] 1) A group III-V semiconductor substrate with an atomically clean surface obtained by ultra-high vacuum cleavage was selected as GaSb, and a bottom gate was provided under the substrate.

[0087] 2) Metal atoms Na are deposited on the surface of a semiconductor substrate by ultra-high vacuum thermal evaporation, and the Na atoms are distributed on top of the metal vacancies in the GaSb substrate.

[0088] 3) Continue to deposit phthalocyanine molecules GdPc2 on the surface of the semiconductor substrate using the ultra-high vacuum thermal evaporation method. The GdPc2 molecules are randomly distributed on the surface of the GaSb substrate.

[0089] 4) Scan the sample using a scanning tunneling microscope with a tungsten needle tip, under ultra-high vacuum: pressure not exceeding 10. -7 Pa; sample temperature not exceeding 4.5 K. Surface morphology images were obtained, revealing the positions of Na atoms and GdPc2 molecules on the GaSb substrate surface.

[0090] 5) The phthalocyanine molecule was manipulated laterally using the tip of a scanning tunneling microscope. The tip was grounded, a bias voltage of -0.8V was applied to the GaSb substrate, and the tunneling current was 0.4nA. The tungsten tip of the scanning tunneling microscope was placed on the top of the GdPc2 molecule.

[0091] 6) The scanning tunneling microscope tip is moved from the top of the GdPc2 molecule to the top of the Na atom to achieve lateral manipulation of the molecule. The GdPc2 molecule is then placed on the adsorbed Na atoms on the surface for assembly, forming a Na-GdPc2 composite structure.

[0092] 7) Using a scanning tunneling microscope tip, another Na atom is manipulated longitudinally. The tip is positioned above the metal atom, and a bias voltage of +1.3V is applied to the GaSb substrate to lift the Na atom.

[0093] 8) Move the scanning tunneling microscope tip above the GdPc2 molecule, apply a bias voltage of -1.2V to the GaSb substrate to release Na atoms, place another Na atom on the GdPc2 molecule, and obtain a Na-GdPc2-Na fixed-axis molecular rotor.

[0094] 9) By applying a gate voltage of ±1.3V to the bottom gate of the semiconductor substrate to control the local potential, the rotation and control of the fixed-axis molecular rotor in step 8 are realized. Source and drain electrodes are provided at both ends of the molecular rotor to realize the molecular rotor It signal output.

[0095] 10) Repeat steps 3-8 above 3 times to assemble 3 Na-GdPc2-Na fixed-axis molecular rotor arrays.

[0096] Example 5

[0097] 1) A III-V group semiconductor substrate with an atomically clean surface obtained by ultra-high vacuum cleavage was selected as InAs, and a bottom gate was provided under the substrate.

[0098] 2) Metal atoms Ga are deposited on the surface of a semiconductor substrate by ultra-high vacuum thermal evaporation, with Ga atoms distributed on top of metal vacancies in the InAs substrate.

[0099] 3) Continue to deposit phthalocyanine molecules CePc2 on the surface of the semiconductor substrate using the ultra-high vacuum thermal evaporation method. The CePc2 molecules are randomly distributed on the surface of the InAs substrate.

[0100] 4) Scan the sample using a scanning tunneling microscope with a tungsten needle tip, under ultra-high vacuum: pressure not exceeding 10. -7 Pa; sample temperature not exceeding 4.5 K. Surface morphology images were obtained, revealing the positions of Ga atoms and CePc2 molecules on the InAs substrate surface.

[0101] 5) Laterally manipulate phthalocyanine molecules using the tip of a scanning tunneling microscope. The tip is grounded, a -0.6V bias voltage is applied to the InAs substrate, and the tunneling current is 0.5nA. Place the tungsten tip of the scanning tunneling microscope on the top of the CePc2 molecule.

[0102] 6) The scanning tunneling microscope tip is moved from the top of the CePc2 molecule to the top of the Ga atom to achieve lateral manipulation of the molecule. The CePc2 molecule is then placed onto the Ga atoms adsorbed on the surface for assembly, forming a Ga-CePc2 composite structure.

[0103] 7) Using a scanning tunneling microscope tip, another Ga atom is manipulated longitudinally. The tip is positioned above the metal atom, and a +1V bias voltage is applied to the InAs substrate to lift the Ga atom.

[0104] 8) Move the scanning tunneling microscope tip above the CePc2 molecule, apply a bias voltage of -1.3V to the InAs substrate to release Ga atoms, place another Ga atom on the CePc2 molecule, and obtain a Ga-CePc2-Ga fixed-axis molecular rotor.

[0105] 9) By applying a gate voltage of ±1.5V to the bottom gate of the semiconductor substrate to regulate the local potential, the rotation and control of the fixed-axis molecular rotor in step 8 are realized. Source and drain electrodes are provided at both ends of the molecular rotor to realize the molecular rotor It signal output.

[0106] 10) Repeat steps 3-8 above 3 times to assemble 3 Ga-CePc2-Ga fixed-axis molecular rotor arrays.

[0107] As can be seen from the above embodiments, the method of the present invention utilizes the high diffusion barrier of naturally occurring metal vacancies on the surface of a III-V semiconductor substrate for physically adsorbed metal atoms to achieve atomic-level precise anchoring of molecular rotor composite structures. By assembling fixed-axis molecular rotors on a III-V semiconductor substrate, the lateral diffusion of molecules and a stable rotation axis are restricted, enabling fixed-axis rotation of molecules and precise construction and arrangement of molecular rotor arrays, thus solving the problem of the inability to reposition and arrange molecular structures. The rotation speed can be controlled by adjusting the local potential through the gate voltage of pre-embedded electrodes. The atomic-level manufacturing strategy enables precision processing based on individual atoms and molecules, is compatible with semiconductor processes, and allows for precise design of molecular rotor arrays, providing greater controllability.

[0108] This invention is not limited to the above embodiments. Based on the technical solutions disclosed in this invention, those skilled in the art can make some substitutions and modifications to some of the technical features without creative effort, and all such substitutions and modifications are within the protection scope of this invention.

Claims

1. A method for atomic scale construction of a surface anchored molecular rotor and an array thereof on a semiconductor substrate, characterized by, The method comprises the following steps: III-V semiconductor substrates are cleaved by ultra-high vacuum to obtain atomically clean surfaces; Metal atoms and phthalocyanine molecules are respectively evaporated on the surfaces of the semiconductor substrates by an ultra-high vacuum thermal evaporation method; There are naturally reconstructed metal vacancies on the surfaces of the III-V semiconductor, and the grown metal atoms are mainly attached to the metal vacancies of the III-V semiconductor; The sample is scanned by a scanning tunneling microscope to obtain a surface topography map; The positions of the metal atoms and the phthalocyanine molecules adsorbed on the surface of the semiconductor substrate are identified according to the surface topography map; The phthalocyanine molecules are laterally manipulated by using a scanning tunneling microscope needle tip to place the phthalocyanine molecules on the metal atoms adsorbed on the surface to form a metal atom-phthalocyanine molecule structure; The phthalocyanine molecules are laterally manipulated, the sample has a bias voltage of -0.5 ~ -0.8 V, the tunneling current is 0.2 ~ 0.6 nA, and the needle tip is moved from the top end of the phthalocyanine molecule to the top end of the metal atom to realize the lateral manipulation of the molecules; Another metal atom is vertically manipulated by using a scanning tunneling microscope needle tip to place the other metal atom on the phthalocyanine molecule to obtain a metal atom-phthalocyanine molecule-metal atom axial molecule rotor composite structure; The metal atom is vertically manipulated, +1 V ~ +1.3 V bias voltage is used to lift the metal atom, the needle tip is above the phthalocyanine molecule, and -1 V ~ -1.3 V bias voltage is used to release the metal atom; The rotation and control of the molecule rotor are realized by applying a gate voltage to the bottom gate of the semiconductor substrate to control the local electric potential, and the signal output of the molecule rotor is realized by arranging a source electrode and a drain electrode at both ends of the molecule rotor.

2. The method according to claim 1, wherein the semiconductor substrate surface is a silicon substrate surface. The III-V semiconductor includes InAs, GaAs, InSb or GaSb.

3. The method according to claim 1, wherein the method is characterized by: The metal atom includes K, Na, Rb, Ga, In or Cs.

4. The method according to claim 1, wherein the method is characterized by: The phthalocyanine molecule includes a lanthanide double phthalocyanine complex LnPC2, wherein Ln = La / Ce / Pr / Nd / Pm / Sm / Eu / Gd / Tb / Dy / Ho / Er / Tm / Yb / Lu.

5. The method according to claim 1, wherein the method is characterized by: The scanning tunneling microscope and its needle tip working environment are ultra-high vacuum, the pressure is not higher than 10 -7 Pa; the sample temperature is not higher than 4.5 K.

6. The method according to claim 1, wherein the method is characterized by: The gate voltage is ±0.8 V ~ ±1.5 V.

7. The method according to claim 1, wherein the method is characterized by: The bottom gate is a gold electrode and a silicon oxide layer, and the source electrode and the drain electrode are gold electrodes and are located on the surface of the III-V semiconductor and close to the two sides of the molecule rotor.

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