Reactive sputter coating equipment capable of improving film forming uniformity

Abstract

The invention provides reactive sputtering coating equipment capable of improving film forming uniformity. The reactive sputtering coating equipment comprises a coating cavity, a carrying table, a sputtering assembly, a reaction gas inlet pipeline and a driving assembly, the carrying table is positioned in the coating cavity and is used for carrying a substrate to be coated; the sputtering assembly is located at the top of the coating cavity and used for generating sputtering particles; the reaction gas inlet pipeline comprises an annular pipeline and a plurality of gas ejector pipes, the annular pipeline is annularly arranged between the sputtering assembly and the carrying table and communicates with a reaction gas source, the gas ejector pipes are distributed on the same circumference of the annular pipeline at intervals, one ends of the gas ejector pipes are connected with the annular pipeline, and the other ends of the gas ejector pipes extend towards the inner side of the annular pipeline; the gas ejector pipes are used for conveying reaction gas, at least part of the gas ejector pipes can stretch out and draw back horizontally, and the driving assembly is connected with the gas ejector pipes which can stretch out and draw back horizontally and used for adjusting the lengths of the corresponding gas ejector pipes in the coating process, so that the distribution of the reaction gas in the coating space is adjusted. According to the invention, the coating uniformity can be improved, and the production yield can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit manufacturing equipment, and in particular to a reactive sputtering coating device capable of improving film formation uniformity. Background Art

[0002] Sputtering coating technology is a technology that uses high-energy particles (usually argon ions) accelerated by an electric field to bombard the target material in a vacuum environment, knocking out atoms and other particles in the target material and depositing them on the substrate to form the desired thin film. It has many advantages such as fast deposition speed, high controllability, and a wide variety of coatings, and is being used more and more widely.

[0003] Reactive sputtering is a type of sputtering coating technology. During the sputtering process, reactive gas is introduced into the coating chamber. The target particles react with the reactive gas to form a compound film such as oxide or nitride. The efficiency of reactive sputtering coating is closely related to the concentration of sputtered particles and the amount of reactive gas.

[0004] In existing reactive sputtering coating equipment, the reactive gas is transported to the coating chamber through an air inlet pipe fixed on the chamber. Since the position of the air outlet of the air inlet pipe is fixed, the distribution of the reactive gas in the coating space remains unchanged during the entire coating period, and usually there is more reactive gas distributed in the center area of ​​the wafer and less distributed at the edge, and the center area of ​​the wafer is usually the area with the highest density of sputtered particles. This can easily lead to the problem that the deposited film is thick in the middle and thin at the edges, especially the longer the coating time, the more serious this uneven situation is.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present invention and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology section of the present invention. Summary of the invention

[0006] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a reactive sputtering coating device that can improve the uniformity of film formation, so as to solve the problem that the existing reactive sputtering coating device has a fixed outlet position of the reaction gas, which easily leads to uneven film thickness of the deposited thin film.

[0007] To achieve the above-mentioned purpose and other related purposes, the present invention provides a reactive sputtering coating device capable of improving film formation uniformity, the reactive sputtering coating device comprising a coating chamber, a carrier, a sputtering assembly, a reactive gas intake pipeline and a driving assembly; the carrier is located in the coating chamber, and is used to carry the substrate to be coated; the sputtering assembly is located at the top of the coating chamber, and is used to generate sputtering particles; the reactive gas intake pipeline comprises an annular pipeline and a plurality of jet pipes, the annular pipeline is arranged between the sputtering assembly and the carrier, and is connected to a reactive gas source, the plurality of jet pipes are distributed at intervals on the same circumference of the annular pipeline, and one end of the jet pipe is connected to the annular pipeline, and the other end extends to the inner side of the annular pipeline, and is used to transport the reactive gas, wherein at least part of the jet pipe is horizontally retractable, and the driving assembly is connected to the horizontally retractable jet pipe, and is used to adjust the length of the corresponding jet pipe during the coating process, thereby adjusting the distribution of the reactive gas in the coating space.

[0008] Optionally, the air injection pipe comprises a bellows.

[0009] Optionally, the reactive sputtering coating equipment further comprises a baffle disposed above the bellows for preventing sputtered particles from being deposited on the surface of the bellows.

[0010] More optionally, the baffle is detachably connected to the annular pipeline.

[0011] In an optional embodiment, the driving assembly includes a pair of electromagnets with the same or opposite polarities. The pair of electromagnets connected to the jet pipe are horizontally spaced when not energized, and attract or move away from each other when energized, thereby causing the corresponding jet pipe to contract or extend horizontally.

[0012] More optionally, the non-magnetic surface of the electromagnet is plated with a magnetic shielding layer.

[0013] Optionally, the retractable air jet tubes and the non-retractable air jet tubes are alternately spaced.

[0014] Optionally, the reactive sputtering coating equipment further comprises a baffle extending from the periphery of the sputtering assembly to the circumferential periphery of the carrier, and the annular pipeline is fixed on the baffle.

[0015] Optionally, at least part of the jet pipe includes a first section of pipeline and a second section of pipeline that are detachably connected, one end of the first section of pipeline is connected to the annular pipeline, and the other end is threadedly connected to the second section of pipeline.

[0016] Optionally, the first section of the pipeline is retractable and the second section of the pipeline is not retractable.

[0017] As described above, the reactive sputtering coating device that can improve the uniformity of film formation provided by the present invention has the following beneficial effects: the reactive sputtering coating device that can improve the uniformity of film formation provided by the present invention adopts a retractable jet tube, and adjusts the retraction of the jet tube during the coating process through a driving component, thereby adjusting the horizontal length of the jet tube, improving the distribution of the reaction gas in the coating space, and helping to improve the uniformity of the coating and the production yield. The device has a simple structure, and can achieve adjustment during the coating process without stopping the device, which helps to improve the output rate of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 The schematic diagram shows the cross-sectional structure of a reactive sputtering coating device capable of improving film formation uniformity provided by the present invention in one example.

[0019] Figure 2 A top view of a reactive gas inlet pipeline of a reactive sputtering coating device capable of improving film formation uniformity provided by the present invention is shown in an example.

[0020] Figure 3 The diagram shows the positional relationship between the gas injection pipe, the driving assembly and the baffle in the reactive sputtering coating device provided by the present invention which can improve the uniformity of film formation. DETAILED DESCRIPTION

[0021] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0022] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0023] In the context of the present invention, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0024] It should be noted that the diagrams provided in this embodiment are only schematic illustrations of the basic concept of the present invention, and the diagrams only show the components related to the present invention rather than the number, shape and size of the components in actual implementation. The type, quantity and proportion of each component in actual implementation may be changed at will, and the layout of the components may also be more complicated. In order to make the diagrams as concise as possible, not all structures are marked in the drawings.

[0025] like Figure 1 to Figure 2 As shown, the present invention provides a reactive sputtering coating device capable of improving film formation uniformity. The reactive sputtering coating device comprises a coating chamber 11 , a carrier 13 , a sputtering assembly, a reaction gas inlet pipeline 15 and a driving assembly 16 .

[0026] The coating chamber 11 is used to accommodate the process kit and provide a coating space. It is usually a chamber made of metal materials such as stainless steel and aluminum alloy, and the inner surface of the chamber can be coated with an anti-corrosion coating. In the field of semiconductor technology, the coating chamber 11 is usually cylindrical and adapted to the morphology of the wafer. The side of the coating chamber 11 is usually provided with a channel for the wafer to enter and exit, and an exhaust port (not marked) connected to the vacuum pump is provided in the middle and lower part to discharge the excess gas in the chamber in time and control the interior of the coating chamber 11 to the required vacuum degree. In this embodiment, a baffle 12 is provided in the coating chamber 11, and the upper end of the baffle 12 can be fixedly connected to the coating chamber 11, and extends from the periphery of the sputtering assembly downward to the circumferential periphery of the carrier 13 to prevent contamination of the inner wall of the chamber. The baffle 12 can be made of the same material as the chamber, such as a stainless steel plate or an aluminum alloy plate, and the surface of the baffle 12 can also be coated with a corrosion-resistant coating such as ceramic. During the coating process, the baffle 12 can be grounded. The space inside the baffle 12 is the sputtering space. Therefore, the inner surface of the baffle 12 may be in the shape of a funnel that is wide at the top and narrow at the bottom, and the bottom opening area thereof corresponds to the coating area to guide the flow direction of the sputtered particles and the reaction gas. The baffle 12 may be an integrally formed structure or a split structure including a plurality of enclosures arranged above and below. In some examples, a coil (not shown) for generating an auxiliary magnetic field may be provided on the periphery of the coating chamber 11 to enhance the downward movement of the sputtered particles.

[0027] The sputtering assembly is arranged at the top of the coating chamber 11 for generating sputtering particles. The sputtering assembly generally includes a target plate for fixing the target material 141, a sputtering gas for bombarding the target material 141 to generate sputtering particles, and a sputtering power supply for generating a high-voltage electric field to ionize the sputtering gas. The target material 141 is, for example, a metal target such as a copper target or an aluminum target. The sputtering gas is generally argon. The sputtering gas can be introduced into the coating chamber 11 through an air inlet arranged near the target material 141. The sputtering power supply can be a DC power supply, an AC power supply or a radio frequency power supply, and a radio frequency power supply is preferably used in this embodiment. When the high-voltage electric field applied by the sputtering power supply acts on the sputtering gas argon, the argon is ionized to form a plasma including positively charged ions and free electrons, and the high-energy argon ions in the plasma collide with the surface of the target material 141 under the acceleration of the electric field, causing the atoms of the target material 141 to be sputtered out and fly to the substrate to be coated. In a preferred example, the device is a magnetron sputtering device, so the sputtering assembly also includes a magnet assembly 142, which may include a permanent magnet and / or an electromagnet, which may be arranged on the back of the target 141. The magnet assembly 142 introduces a magnetic field in the sputtering region to increase the path length and residence time of the electrons, enhance the density and stability of the plasma, and thus improve the sputtering efficiency. In some examples, the sputtering assembly also includes a cooling unit (not shown) to timely discharge the heat in the sputtering assembly to prevent the deformation of the sputtering assembly due to heat accumulation, especially to avoid deformation of the target 141. The cooling unit is, for example, a water-cooling chamber attached to the back of the target 141, and the magnet assembly 142 is immersed in the water-cooling chamber, and the heat is taken away by the circulation of cooling water in the water-cooling chamber. In addition, a power mechanism for driving the sputtering assembly to rotate can also be provided, which helps to improve the sputtering uniformity of the target surface.

[0028] The carrier 13 is located in the coating chamber 11 and is used to carry the substrate to be coated. The morphology of the carrier 13 is adapted to the substrate. For example, when the substrate is a wafer, the bearing surface of the carrier 13 is generally a circular surface. Depending on the coating process, the carrier 13 can be made of metal or insulating materials such as aluminum nitride ceramics, or a composite material with a ceramic layer plated on the metal surface. In this embodiment, a deposition ring 18 can be provided on the circumference of the carrier 13. The deposition ring 18 can be, for example, set on a boss on the circumferential edge of the carrier 13 and extend toward the side wall / baffle 12 of the coating chamber 11. In other examples, when a groove is formed at the end of the baffle 12 extending to the periphery of the carrier 13, the deposition ring 18 can be set in the groove of the baffle 12, that is, the carrier 13 is not in direct contact with the carrier 13, it is located above the edge of the carrier 13, and the gap between it and the carrier 13 can be used as an exhaust channel. In some other examples, one end of the deposition ring 18 is mounted on the carrier 13, and the other end is mounted in the groove of the baffle 12. The deposition ring 18 can be an integrally formed structure, or a split structure including two or more annular structures. The material of the deposition ring 18 can be determined according to the process, for example, a ceramic material such as aluminum oxide, zirconium oxide, or a composite material with a ceramic layer plated on the surface of a metal material, without specific limitation. A heating and / or cooling device can be provided on the carrier 13 to adjust the temperature of the wafer as needed. The carrier 13 can fix the wafer based on electrostatic adsorption or vacuum adsorption. In some examples, an edge ring can be set to press above the edge of the wafer to fix the wafer on the carrier surface and prevent the wafer edge and back from being coated. In addition, a support shaft 131 can be provided at the bottom of the carrier 13, and the support shaft 131 can extend all the way down to the outside of the coating chamber 11. The support shaft 131 can be connected to a motor to drive the carrier 13 to rotate and / or lift.

[0029] The reaction gas inlet pipeline 15 includes an annular pipeline 151 and a plurality of jet pipes 152. The annular pipeline 151 is arranged between the sputtering assembly and the carrier 13, and is usually closer to the carrier than the sputtering assembly. The center of the annular pipeline 151 is usually coaxial with the wafer. The annular pipeline 151 can be fixed in any suitable manner, for example, fixed on the coating chamber 11. In the case where a baffle 12 is provided, the annular pipeline 151 can be fixed on the baffle 12. For example, a groove can be provided on the baffle 12, and the annular pipeline 151 is embedded in the groove. The annular pipeline 151 is preferably a metal pipe, for example, a stainless steel pipe or an aluminum alloy pipe of the same material as the cavity. The annular pipeline 151 is connected to the reaction gas source via the air inlet on the coating chamber 11. The reaction gas is, for example, nitrogen or oxygen. Multiple jet pipes 152 are spaced apart on the same circumference of the annular pipeline 151, and one end of the jet pipe 152 is connected to the annular pipeline 151, and the other end extends to the inner side of the annular pipeline 151, and is used to transport the reaction gas horizontally toward the center of the annular pipeline, and also above the center area of ​​the corresponding wafer. In the process of diffusing to the surface of the wafer, the reaction gas chemically reacts with the sputtered particles encountered, thereby forming a compound film on the surface of the wafer. For example, in one example, Figure 2 As shown, a plurality of air injection pipes 152 are evenly spaced and distributed on the same circumferential surface. The air injection pipes 152 and the annular pipeline 151 may be fixedly connected or detachably connected, for example, the two are fixed by welding or connected by threads.

[0030] In this embodiment, at least part of the jet tube 152 can be extended and retracted horizontally, and the driving assembly 16 is connected to the horizontally extendable jet tube 152, and is used to drive the corresponding jet tube 152 to extend and retract in the horizontal direction during the coating process to adjust the length of the corresponding jet tube 152, thereby adjusting the distribution of the reaction gas in the coating space.

[0031] An exemplary method of using the reactive sputtering coating equipment that can improve the uniformity of film formation provided by this embodiment is that during the initial coating, the length of each jet tube 152 is stretched to the maximum, at which time the distance between each jet tube 152 and the center point of the annular pipeline 151 is the smallest, thereby forming a smaller central area in the center of the annular pipeline 151, and the central area corresponds to the central area of ​​the wafer. When each jet tube 152 sprays the reaction gas horizontally, a relatively large concentration of reaction gas flow will be generated in the central area. At the same time, the central area is also the area with the highest density of sputtered particles, so the central area of ​​the wafer will form a film faster than other areas. After a period of time, the drive component 16 drives the retractable jet tube 152 to compress, so that the corresponding gas outlet position changes, so that the gas concentration originally corresponding to the central area of ​​the wafer is reduced and the gas concentration in other areas is increased accordingly, so that the coating speed of the central area of ​​the wafer is relatively slowed down and other areas are relatively accelerated. The process can also be accompanied by the rotation of the wafer. If the film to be deposited is relatively thick, this process can be repeated multiple times, that is, the jet pipe 152 is repeatedly stretched-compressed-stretched-compressed to adjust the distribution of the reaction gas in the coating space, thereby adjusting the coating speed of different areas of the wafer, which helps to improve the uniformity of the coating. This method is only exemplary. For example, in other examples, the jet pipe can also be compressed to the maximum and then gradually stretched during the coating process, without specific limitation.

[0032] The material of the jet pipe 152 can be the same as that of the annular pipeline 151, for example, a stainless pipe can be used, which can be extended and retracted in any suitable manner. For example, in some examples, the jet pipe 152 can be made of a multi-section pipeline that is folded and nested with each other, and the jet pipe 152 can be extended and retracted by driving the driving component 16 to drive each section of the pipeline to unfold or fold with each other. In a preferred example provided by the present invention, the jet pipe 152 adopts a bellows. A bellows refers to a tubular elastic sensitive element connected along the folding and retracting direction with a foldable corrugated sheet, which can be extended and retracted under the drive of the driving component 16. The use of a bellows is not only convenient for extension and retraction, but also can better ensure its airtightness on the transmission path. The driving component 16 can adopt common structures such as a crank slider mechanism, a hinge mechanism and a telescopic arm mechanism. However, in the preferred example provided by the present invention, the extension and retraction of the jet pipe 152 can be changed by electromagnetic drive, which can greatly simplify the structure of the driving component 16. For example, in this embodiment, the driving assembly 16 includes a pair of N-pole electromagnets and S-pole electromagnets. The N-pole electromagnets and S-pole electromagnets connected to the same jet tube 152 are horizontally spaced when not powered on. When powered on, the two attract each other, thereby causing the corresponding jet tube 152 to contract in the horizontal direction. That is, in this example, each retractable jet tube 152 is connected to a pair of electromagnets with opposite polarities (polarities after power is supplied). In the non-powered state, the pair of electromagnets are spaced on the same horizontal plane. At this time, the jet tube 152 is in a fully extended state and has a maximum length. When the electromagnets are powered on, the electromagnets attract each other until they fit together, pulling the jet tube sections connected to each other closer to each other, thereby achieving compression of the jet tube 152. By adjusting the power-on current, the magnetic size of the electromagnet can be adjusted, thereby adjusting the compression length of the jet tube 152 and changing the distribution of the reaction gas. After power failure, the electromagnets are disconnected and the jet tube 152 is expanded again. The power on and off of the drive assembly can be controlled by the upper computer of the unified equipment. The upper computer that stores the coating process parameters controls the power on and off of the electromagnet according to the set program. In another example, the paired electromagnets can also have the same polarity. When not powered on, the two electromagnets with the same polarity are spaced on the same bottom surface of the same bellows. At this time, the bellows can be in a natural state (neither contracted nor stretched). When the electromagnets are powered on, the two electromagnets repel each other due to the same polarity and move away from each other, thereby driving the bellows to stretch horizontally toward the center of the annular pipeline, and its length becomes longer. The electromagnet can be connected to the bottom surface of the bellows through a metal connector, or directly fixed to the bottom surface of the bellows. Preferably, the two are detachably connected.

[0033] In some examples, in order to better support the electromagnet and prevent the downward deformation of the jet tube 152 due to the gravity of the electromagnet, one of the paired electromagnets can be fixed, for example, the electromagnet close to the side wall of the coating chamber 11 is connected to the annular pipe 151 or the baffle 12. The two electromagnets arranged in pairs can have the same or different sizes. In addition to the current size, the magnetism of the magnet can be improved by optimizing the coil winding, the core material and the shape, etc., so as to reduce the volume and mass of the magnet as much as possible while improving the magnetism of the electromagnet. The volume of the electromagnet is as small as possible, so that it can be completely covered by the bellows to reduce its exposure in the coating space.

[0034] In some examples, all the jet tubes 152 can be set as a retractable structure, which has the advantage of a larger adjustable range, but the required drive assembly 16 is more complex. In other examples, only some of the jet tubes 152 are retractable structures, for example, the jet tubes 152 located in the same radial direction are retractable tubes, that is, the retractable jet tubes 152 are symmetrically distributed on the same horizontal plane. The calibers of the gas outlet and the gas inlet of the jet tube 152 can be the same or different. In some other examples, the retractable jet tubes and the non-retractable jet tubes are alternately distributed at intervals, and the jet positions of all the jet tubes are on the same circumference when the retractable jet tubes do not undergo telescopic deformation; during the coating process, all the retractable jet tubes are synchronously retracted to form a jet surface different from the jet surface where the non-retractable jet tube is located, and the two annular jet surfaces are spaced apart along the annular tube path. If the number of retractable jet tubes is sufficient, their deformation can be divided into more levels, thereby forming more than three annular jet surfaces spaced apart along the annular tube path, which helps to further promote the uniform diffusion of the reaction gas and improve the uniformity of the coating. In other examples, the extension and retraction of the air jet tube can also be adjusted individually as needed, without specific limitation. The drive assembly of this embodiment can more flexibly control the extension and retraction of the air jet tube, and can better meet different coating requirements.

[0035] In some examples, such as Figure 3 As shown, in the case of using a bellows, the reactive sputtering coating equipment also includes a baffle 17 arranged above the bellows to prevent sputtered particles from being deposited on the surface of the bellows, so as to avoid the accumulation of sputtered particles in the folding interval of the bellows and affecting the expansion and contraction of the bellows, which helps to extend the service life of the jet tube 152. The baffle 17 can be semi-annular, semi-covering the bellows, and its length is not less than the maximum length of the bellows. The baffle 17 can be made of a stainless steel sheet or the same material as the target material 141 to avoid the introduction of new pollution by the baffle 17. In the case where the baffle 17 is a metal baffle, the baffle 17 can be charged to reduce the adsorption of charged particles. In a further example, the baffle 17 is detachably connected to the annular pipeline 151. For example, one end of the baffle 17 connected to the annular pipeline 151 is provided with a semi-open clamping ring that can be clamped on the annular pipeline 151.

[0036] When using electromagnets, the polarity of the electromagnets can be concentrated as much as possible on the side used for mutual attraction or separation by optimizing the winding direction of the electromagnet coils. In addition, a magnetic shielding layer can be plated on the non-magnetic surface of the electromagnet to further prevent the non-magnetic surface from absorbing sputtered particles, which helps reduce the contamination of the electromagnet and prolong its service life.

[0037] In some examples, at least part of the jet pipe 152 includes a first section of the pipeline and a second section of the pipeline that are detachably connected, one end of the first section of the pipeline is connected to the annular pipeline 151, and the other end is threadedly connected to the second section of the pipeline. One advantage of this structure is that it can be replaced in time according to the usage of each section of the jet pipe 152. For example, if some sections of the pipeline are damaged or the surface is seriously contaminated, they can be replaced in time, which helps to extend the service life of the jet pipe and reduce the cost of spare parts. Another advantage is that jet pipes 152 of different lengths can be used according to coating needs, such as according to the size of the wafer coating area, to better meet the coating needs.

[0038] If the jet pipe 152 is a two-stage structure, preferably, the first section of the pipeline is retractable and the second section of the pipeline is not retractable, which is more convenient for the arrangement of the drive assembly 16. For example, the first section adopts a corrugated tube and the second section can adopt a rigid metal tube or a ceramic tube.

[0039] Other structures not mentioned in the reactive sputtering coating equipment provided by the present invention have no obvious difference from the prior art and will not be elaborated in detail.

[0040] In summary, the present invention provides a reactive sputtering coating device that can improve film uniformity, the reactive sputtering coating device includes a coating chamber, a carrier, a sputtering assembly, a reaction gas inlet pipeline and a driving assembly; the carrier is located in the coating chamber, and is used to carry the substrate to be coated; the sputtering assembly is located at the top of the coating chamber, and is used to generate sputtering particles; the reaction gas inlet pipeline includes an annular pipeline and a plurality of jet pipes, the annular pipeline is arranged between the sputtering assembly and the carrier, and is connected to the reaction gas source, and the plurality of jet pipes are distributed at intervals on the same circumference of the annular pipeline, and one end of the jet pipe is connected to the annular pipeline, and the other end extends to the inner side of the annular pipeline, and is used to transport the reaction gas, wherein at least part of the jet pipe can be horizontally retractable, and the driving assembly is connected to the horizontally retractable jet pipe, and is used to adjust the length of the corresponding jet pipe during the coating process, thereby adjusting the distribution of the reaction gas in the coating space. The present invention helps to improve the uniformity of coating and improve the production yield. The equipment has a simple structure, and does not need to be shut down during the process of adjusting the process, which helps to improve the output rate of the equipment. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0041] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A reactive sputtering coating device capable of improving film uniformity, characterized in that: The reactive sputtering coating equipment comprises a coating chamber, a carrier, a sputtering assembly, a reaction gas intake pipeline and a driving assembly; the carrier is located in the coating chamber and is used to carry the substrate to be coated; the sputtering assembly is located at the top of the coating chamber and is used to generate sputtering particles; the reaction gas intake pipeline comprises an annular pipeline and a plurality of jet pipes, the annular pipeline is arranged between the sputtering assembly and the carrier, and is connected to the reaction gas source, and the plurality of jet pipes are distributed at intervals on the same circumference of the annular pipeline, and one end of the jet pipe is connected to the annular pipeline, and the other end extends to the inner side of the annular pipeline for conveying reaction gas, wherein at least part of the jet pipe is horizontally retractable, and the driving assembly is connected to the horizontally retractable jet pipe, and is used to adjust the length of the corresponding jet pipe during the coating process, thereby adjusting the distribution of the reaction gas in the coating space.

2. The reactive sputtering coating equipment according to claim 1, characterized in that: The air injection pipe includes a bellows.

3. The reactive sputtering coating equipment according to claim 2, characterized in that: The reactive sputtering coating device also includes a baffle disposed above the bellows for preventing sputtered particles from being deposited on the surface of the bellows.

4. The reactive sputtering coating equipment according to claim 3, characterized in that: The baffle is detachably connected to the annular pipeline.

5. The reactive sputtering coating equipment according to claim 1, characterized in that: The retractable air jet tubes and the non-retractable air jet tubes are alternately distributed.

6. The reactive sputtering coating equipment according to claim 1, characterized in that: The reactive sputtering coating device also includes a baffle extending from the periphery of the sputtering component to the circumferential periphery of the carrier, and the annular pipeline is fixed on the baffle.

7. The reactive sputtering coating equipment according to claim 1, characterized in that: At least part of the jet pipe comprises a first section of pipeline and a second section of pipeline which are detachably connected, one end of the first section of pipeline is connected to the annular pipeline, and the other end is threadedly connected to the second section of pipeline.

8. The reactive sputtering coating equipment according to claim 7, characterized in that: The first section of the pipeline is retractable, and the second section of the pipeline is not retractable.

9. The reactive sputtering coating device according to any one of claims 1 to 8, characterized in that: The driving assembly includes a pair of electromagnets with the same or opposite polarities. The pair of electromagnets connected to the jet pipes are horizontally spaced apart when not energized. When energized, the two electromagnets attract or move away from each other, thereby causing the corresponding jet pipes to contract or extend horizontally.

10. The reactive sputtering coating device according to claim 9, characterized in that: The non-magnetic attraction surface of the electromagnet is plated with a magnetic shielding layer.

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