A chemical vapor deposition (CVD) reaction chamber and a CVD device

Abstract

The present invention relates to the field of semiconductor processing technology, and in particular to a chemical vapor deposition (CVD) device, comprising: a processing tank and a gas-filled tube fixedly connected to the upper end of the processing tank, the heating layer is installed inside the processing tank, a plurality of jet assemblies are arranged on the upper end of the heating layer, and the plurality of jet assemblies are connected to the gas-filled tube at the upper end for exporting the reaction gas; a plurality of placement assemblies are arranged inside the reaction space, the placement assemblies include a plurality of placement plates, a plurality of side frames and two sliding blocks, a plurality of the placement plates are horizontally and parallelly fixedly connected between the plurality of side frames, a plurality of placement grooves are annularly provided on the placement plate, and two of the sliding blocks are symmetrically and fixedly connected to the bottom surface of the lowest placement plate, and are slidably arranged inside the sliding groove. The present invention evenly distributes the reaction gas on semiconductors of different layers, avoids the uneven distribution of the reaction gas, and improves the coating effect on the semiconductor.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and particularly relates to a chemical vapor deposition (CVD) reaction chamber and a CVD device. Background Art

[0002] CVD (Chemical Vapor Deposition) is a chemical reaction process in which material deposition is carried out on the surface of a solid through a gas-phase reaction, and it is one of the commonly used processes in the semiconductor industry. As an important device for implementing the CVD process, the CVD reaction chamber plays a role in providing a suitable reaction environment and controlling reaction parameters.

[0003] Chinese Patent with publication number CN114231952B discloses a CVD coating device, which includes: a reaction chamber for accommodating a substrate to complete the coating operation, with a reaction gas input end and an inert gas input end respectively provided on the reaction chamber, and the substrate coating process is plasma chemical vapor deposition coating; a polishing assembly disposed in the reaction chamber, and the polishing assembly includes a polishing head that can contact the substrate and polish the surface of the substrate by rotating relative to the substrate.

[0004] In order to improve the coating efficiency, existing semiconductor CVD devices place the semiconductors vertically, but usually introduce the reaction gas from above. In the vertically parallel placement method, a large amount of reaction gas is likely to deposit on the upper semiconductor, resulting in uneven thickness of the semiconductor coating and affecting the coating effect. Summary of the Invention

[0005] The purpose of the present invention is to solve the drawback that in the existing vertically parallel placement method, a large amount of reaction gas is likely to deposit on the upper semiconductor, resulting in uneven thickness of the semiconductor coating and affecting the coating effect, and to propose a chemical vapor deposition (CVD) reaction chamber and a CVD device.

[0006] In order to achieve the above purpose, the present invention adopts the following technical solutions:

[0007] A chemical vapor deposition (CVD) reaction chamber includes: a heating layer, a rectangular reaction space is arranged inside the heating layer, and a plurality of conduits are symmetrically arranged on both sides of the inner wall of the reaction space, and the plurality of conduits are respectively used for introducing gaseous precursors and discharging waste gases;

[0008] Two sliding grooves are symmetrically opened on the bottom surface of the reaction space, and a limiting groove is opened in the middle of the two sliding grooves, and the depth of the limiting groove is greater than the depth of the sliding groove.

[0009] A chemical vapor deposition (CVD) device using the above reaction chamber, comprising: a processing tank and a gas charging pipe fixedly connected to the upper end of the processing tank. The heating layer is installed inside the processing tank, and a plurality of jet components are arranged above the heating layer. The plurality of jet components are communicated with the gas charging pipe at the upper end for discharging reaction gases;

[0010] A plurality of placement components are arranged inside the reaction space. The placement components include a plurality of placement plates, a plurality of side frames, and two sliding blocks. The plurality of placement plates are horizontally and fixedly connected between the plurality of side frames. A plurality of placement grooves are annularly formed on the placement plates. The two sliding blocks are symmetrically and fixedly connected to the bottom surface of the lowermost placement plate and are slidably arranged inside the sliding grooves;

[0011] An installation opening is formed in the middle of the placement plate. Air guiding components are arranged inside the installation openings of the plurality of placement plates. The air guiding components include installation pipes, air guiding pipes, and jet nozzles. The installation pipes are fixedly installed inside the installation openings. The air guiding pipes are elastically installed inside the installation pipes through elastic members. The jet nozzles are fixedly connected to the bottom ends of the air guiding pipes;

[0012] The air guiding end of the jet component moves downward, driving the air guiding pipe to move downward, thereby squeezing and connecting the air guiding pipes in the plurality of air guiding components.

[0013] Preferably, the jet component includes a connecting pipe, a jet head, and a telescopic extrusion pipe. The connecting pipe is fixedly installed on the top wall of the reaction space. The jet head is fixedly connected to the bottom end of the connecting pipe. The telescopic extrusion pipe is fixedly connected to the bottom end of the jet head.

[0014] Preferably, a bayonet is formed on the air guiding pipe, and a clamping pipe is arranged at the bottom end of the jet nozzle. The bayonet, the bottom end of the telescopic extrusion pipe, and the clamping pipe are all polygonal for mutual clamping.

[0015] Preferably, a sliding space is arranged inside the installation pipe, and a limiting ring is arranged inside the sliding space. The positions of the limiting rings inside the plurality of installation pipes are different. The higher the limiting ring is, the closer its position is to the bottom end of the installation pipe;

[0016] The elastic member is arranged inside the sliding space and is located above the limiting ring. The elastic member includes a fixing ring, a bottom ring, and a spring tube. The fixing ring is fixedly sleeved on the air guiding pipe. The bottom ring and the spring tube are sleeved on the air guiding pipe. The two ends of the spring tube are fixedly connected to the fixing ring and the bottom ring.

[0017] Preferably, a rotating assembly is arranged inside the placement plate. The rotating assembly includes a plurality of rotating gear discs, a driving gear disc and a clamping member. The plurality of rotating gear discs are respectively rotatably installed inside a plurality of placement grooves. The driving gear disc is rotatably installed inside the installation pipe, and a driving port is formed in the middle of the driving gear disc. The driving gear disc is meshed with the plurality of rotating gear discs for driving the rotating gear discs to rotate. The clamping member is fixedly connected to the air guide pipe. Both the clamping member and the driving port are polygonal, and the clamping member is used for driving the driving gear disc to rotate.

[0018] Preferably, an adsorption assembly is arranged on the plurality of rotating gear discs. The adsorption assembly is used for adsorbing and fixing the objects placed on the rotating gear discs.

[0019] Preferably, the adsorption assembly includes a plurality of suction cups, a plurality of connecting pipes and a folding air bag ring. The plurality of suction cups are fixedly connected to the centers of the rotating gear discs. The folding air bag ring is sleeved on the air guide pipe, and the upper end is rotatably connected to the bottom wall of the driving gear disc, and the lower end is rotatably connected to the fixed ring. One ends of the plurality of connecting pipes are respectively rotatably installed at the bottoms of the plurality of rotating gear discs and communicated with the inside of the suction cups, and the other ends are fixedly communicated with the folding air bag ring.

[0020] Preferably, two bottom grooves are symmetrically formed inside the limiting groove. The bottom grooves are located directly below the air jetting assembly, and a rotating assembly is arranged inside the bottom grooves.

[0021] Preferably, the rotating assembly includes a driving column and a rotating seat. The driving column is fixedly installed inside the bottom groove. The rotating seat is fixedly connected to the top end of the driving column and is used for rotating the lowermost air guide pipe.

[0022] Compared with the prior art, the beneficial effects of the present invention are:

[0023] By moving down the air guide end of the air jet assembly, multiple air guide pipes are connected into a complete air guide pipeline. At the same time, the air jet heads are moved out of the installation pipe, and multiple air jet heads are respectively located above multiple placement plates, which are used to evenly spray the introduced reaction gas on the placement plates, so as to ensure that the semiconductor coating speeds of different layers are the same. When the air guide pipe rotates, the clamping part will drive the driving gear disk to rotate, and the rotating driving gear disk will drive multiple rotating gear disks to rotate simultaneously, so that the semiconductor placed on the rotating gear disk rotates, facilitating the uniform distribution of the ejected reaction gas on the surface of the semiconductor, so that the coating evenly covers the surface of the semiconductor. After the reaction gas starts to be introduced, due to the downward movement of the air guide pipe, the folded air bag ring fixed between the fixed ring and the limit ring is stretched and inflated, and the folded air bag ring extracts air from multiple communication pipes, thereby extracting the gas between the suction cup and the semiconductor, forming a negative pressure, and adsorbing the semiconductor on the suction cup, strengthening the fixation of the semiconductor. When the coating is finished and multiple air guide pipes are separated, the folded air bag ring squeezes and exhausts, so that the suction cup and the semiconductor are separated again, facilitating the transfer of the semiconductor. The fixed clamping of the upper and lower air guide pipes can be ensured through the polygonal clamping pipe and the clamping port, and at the same time, it is ensured that the pipeline formed by multiple air guide pipes can rotate synchronously, so that the air jet heads at different upper and lower positions rotate at the same speed. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 FIG. 6 is a front structural schematic diagram of a chemical vapor deposition (CVD) device proposed by the present invention;

[0025] Figure 2 FIG. 7 is an internal structural schematic diagram of a chemical vapor deposition (CVD) device proposed by the present invention;

[0026] Figure 3 FIG. 8 is a reaction space structural schematic diagram of a chemical vapor deposition (CVD) device proposed by the present invention;

[0027] Figure 4 FIG. 9 is a placement assembly structural schematic diagram of a chemical vapor deposition (CVD) device proposed by the present invention;

[0028] Figure 5 FIG. 10 is an air guide assembly structural schematic diagram of a chemical vapor deposition (CVD) device proposed by the present invention;

[0029] Figure 6 FIG. 11 is a bottom surface structural schematic diagram of a placement assembly of a chemical vapor deposition (CVD) device proposed by the present invention;

[0030] Figure 7 FIG. 12 is a structural schematic diagram of an air guide pipe of a chemical vapor deposition (CVD) device proposed by the present invention;

[0031] Figure 8Schematic structural diagram of a rotating component of a chemical vapor deposition (CVD) device proposed by the present invention;

[0032] Figure 9 Schematic structural diagram of an adsorption component of a chemical vapor deposition (CVD) device proposed by the present invention;

[0033] Figure 10 Schematic bottom surface structure diagram of an adsorption component of a chemical vapor deposition (CVD) device proposed by the present invention.

[0034] In the figure: 1, heating layer; 2, processing tank; 3, jet component; 31, connecting pipe; 32, jet head; 33, telescopic extrusion pipe; 4, placement component; 41, placement plate; 42, side frame; 43, sliding block; 5, air guiding component; 51, installation pipe; 52, air guiding pipe; 53, jet end head; 6, elastic component; 61, fixing ring; 62, bottom ring; 63, spring pipe; 7, linkage component; 71, rotating gear disk; 72, driving gear disk; 73, clamping part; 8, adsorption component; 81, suction cup; 82, communicating pipe; 83, folding airbag ring; 9, rotating component; 91, driving column; 92, rotating seat; 10, sliding groove; 11, bayonet; 12, clamping pipe; 13, limiting ring. Detailed implementation manners

[0035] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.

[0036] Terms such as "upper", "lower", "left", "right", "middle" and "one" cited in the present invention are only for the convenience of clear narration, rather than to limit the scope of implementation of the present invention. The change or adjustment of their relative relationship, without substantial change in the technical content, should also be regarded as the scope of implementation of the present invention.

[0037] Refer to Figures 1 - 3 , a chemical vapor deposition (CVD) reaction chamber, comprising: a heating layer 1, characterized in that a rectangular reaction space is provided inside the heating layer 1, and a plurality of conduits are symmetrically arranged on both sides of the inner wall of the reaction space, and the plurality of conduits are respectively used for introducing gaseous precursors and discharging waste gases;

[0038] Two sliding grooves 10 are symmetrically opened on the bottom surface of the reaction space, and a limiting groove is opened in the middle of the two sliding grooves 10, and the depth of the limiting groove is greater than the depth of the sliding groove 10.

[0039] Refer to Figures 1 - 10, a chemical vapor deposition (CVD) device using the above reaction chamber, comprising: a processing tank 2 and a gas filling pipe fixedly connected to the upper end of the processing tank 2, characterized in that the heating layer 1 is installed inside the processing tank 2, and a plurality of jet components 3 are arranged at the upper end of the heating layer 1. The plurality of jet components 3 are communicated with the gas filling pipe at the upper end for discharging reaction gases;

[0040] A plurality of placement components 4 are arranged inside the reaction space. The placement components 4 include a plurality of placement plates 41, a plurality of side frames 42 and two sliding blocks 43. The plurality of placement plates 41 are horizontally and fixedly connected between the plurality of side frames 42. A plurality of placement slots are annularly formed on the placement plates 41. The two sliding blocks 43 are symmetrically and fixedly connected to the bottom surface of the lowermost placement plate 41 and are slidably arranged inside the sliding slots 10;

[0041] An installation opening is formed in the middle of the placement plate 41. A gas guiding component 5 is arranged inside the installation openings of the plurality of placement plates 41. The gas guiding component 5 includes an installation pipe 51, a gas guiding pipe 52 and a jet end 53. The installation pipe 51 is fixedly installed inside the installation opening. The gas guiding pipe 52 is elastically installed inside the installation pipe 51 through an elastic member 6. The jet end 53 is fixedly connected to the bottom end of the gas guiding pipe 52;

[0042] The gas guiding end of the jet component 3 moves downward, driving the gas guiding pipe 52 to move downward, thereby squeezing and connecting the gas guiding pipes 52 in the plurality of gas guiding components 5.

[0043] In the embodiment applying the above technical solution, the reaction chamber with the sliding slots 10 provided inside can complete the loading and unloading of semiconductors more quickly, thereby improving the coating efficiency.

[0044] The semiconductors are respectively placed inside the plurality of placement slots. By the downward movement of the gas guiding end of the jet component 3, the plurality of gas guiding pipes 52 are connected into a complete gas guiding pipe path. At the same time, the jet ends 53 are moved out of the installation pipes 51. The plurality of jet ends 53 are respectively located above the plurality of placement plates 41 for uniformly spraying the introduced reaction gases on the placement plates 41, thereby ensuring that the coating speeds of different layers of semiconductors are the same.

[0045] There is a gap between the upper and lower gas guiding components 5, which facilitates the robotic arm to fixedly place a plurality of semiconductors inside the placement slots at the same time, improving the loading and unloading speed.

[0046] The present invention evenly distributes the reaction gases on different layers of semiconductors, avoiding the uneven distribution of the reaction gases and improving the coating effect on the semiconductors.

[0047] The preferred technical solution in this embodiment:

[0048] Refer to Figures 3 - 6, the jet component 3 includes a connecting pipe 31, a jet head 32, and a telescopic extrusion pipe 33. The connecting pipe 31 is fixedly installed on the top wall of the reaction space. The jet head 32 is fixedly connected to the bottom end of the connecting pipe 31. The telescopic extrusion pipe 33 is fixedly connected to the bottom end of the jet head 32;

[0049] A bayonet 11 is provided on the air guide pipe 52. A clamping pipe 12 is provided at the bottom end of the jet end 53. The bayonet 11, the bottom end of the telescopic extrusion pipe 33, and the clamping pipe 12 are all polygonal for mutual clamping.

[0050] When introducing the reaction gas, by controlling the telescopic extrusion pipe 33 to move up and down telescopically, the bottom end of the telescopic extrusion pipe 33 is brought into contact with and pressed against the uppermost air guide pipe 52, driving the air guide pipe 52 to move downward, so that the clamping pipe 12 at the bottom end of the upper air guide pipe 52 is clamped with the bayonet 11 above the lower air guide pipe 52, thereby connecting multiple air guide pipes 52 into a connected pipeline. The reaction gas is ejected through the jet head 32 and the jet end 53 through the upper connecting pipe 31, so that the reaction gas is evenly sprayed and distributed between the placement plates 41 at different layers, ensuring the uniformity of the coating.

[0051] The polygonal clamping pipe 12 and bayonet 11 can ensure the fixed clamping of multiple upper and lower air guide pipes 52, and at the same time ensure that the pipeline formed by multiple air guide pipes 52 can rotate synchronously, enabling the jet ends 53 at different upper and lower positions to rotate at the same speed.

[0052] Refer to Figure 7 , a sliding space is provided inside the installation pipe 51, and a limiting ring 13 is provided inside the sliding space. The positions of the limiting rings 13 inside multiple installation pipes 51 are different, and the higher the limiting ring 13 is, the closer its position is to the bottom end of the installation pipe 51;

[0053] The elastic member 6 is provided inside the sliding space and is located above the limiting ring 13. The elastic member 6 includes a fixed ring 61, a bottom ring 62, and a spring tube 63. The fixed ring 61 is fixedly sleeved on the air guide pipe 52. The bottom ring 62 and the spring tube 63 are sleeved on the air guide pipe 52. The two ends of the spring tube 63 are fixedly connected to the fixed ring 61 and the bottom ring 62.

[0054] Since the air guide pipes 52 at different upper and lower positions need to move down by different distances, the upper air guide pipe 52 moves down by a longer distance than the lower air guide pipe 52, resulting in different positions of the limiting rings 13 inside different installation pipes 51, ensuring that multiple air guide pipes 52 can be clamped together after being pressed and moving downward.

[0055] The elastic member 6 is used to enable the air duct 52 to reset to its original position when not under the extrusion of an external force. Since the fixing ring 61 is fixedly connected to the air duct 52, the entire elastic member 6 will be driven to rotate during the rotation of the air duct 52. Therefore, both the limiting ring 13 and the bottom ring 62 are made of a smooth material to reduce frictional losses.

[0056] Referring to Figures 8 - 9 , a linkage assembly 7 is provided inside the placement plate 41. The linkage assembly 7 includes a plurality of rotating gear disks 71, a driving gear disk 72, and a clamping member 73. The plurality of rotating gear disks 71 are respectively rotatably installed inside a plurality of placement grooves. The driving gear disk 72 is rotatably installed inside the installation pipe 51, and a driving opening is formed in the middle of the driving gear disk 72. The driving gear disk 72 is meshed with the plurality of rotating gear disks 71 for driving the rotating gear disks 71 to rotate. The clamping member 73 is fixedly connected to the air duct 52. Both the clamping member 73 and the driving opening are polygonal, and the clamping member 73 is used to drive the driving gear disk 72 to rotate.

[0057] Since the position of the nozzle for ejecting the reaction gas remains unchanged, it is easy to cause the coating film formation speed near the nozzle of the semiconductor to be fast, while the formation speed on the other side is slow.

[0058] To improve the uniform formation of the coating film on the surface of the semiconductor, when the air duct 52 moves downward and is connected in a mutually clamped manner, it will drive the clamping member 73 to move downward. The downward-moving clamping member 73 will be clamped inside the driving opening in the middle of the driving gear disk 72. When the air duct 52 rotates, the clamping member 73 will drive the driving gear disk 72 to rotate. The rotating driving gear disk 72 will drive the plurality of rotating gear disks 71 to rotate simultaneously, so that the semiconductor placed on the rotating gear disks 71 rotates, facilitating the uniform distribution of the ejected reaction gas on the surface of the semiconductor, and thus enabling the coating layer to uniformly cover the surface of the semiconductor.

[0059] Referring to Figures 7 - 10 , an adsorption assembly 8 is provided on the plurality of rotating gear disks 71. The adsorption assembly 8 is used to adsorb and fix the objects placed on the rotating gear disks 71;

[0060] The adsorption assembly 8 includes a plurality of suction cups 81, a plurality of connecting pipes 82, and a folding airbag ring 83. The plurality of suction cups 81 are fixedly connected to the centers of the rotating gear disks 71. The folding airbag ring 83 is sleeved on the air duct 52, and the upper end is rotatably connected to the bottom wall of the driving gear disk 72, and the lower end is rotatably connected to the fixing ring 61. One ends of the plurality of connecting pipes 31 are respectively rotatably installed at the bottoms of the plurality of rotating gear disks 71 and are in communication with the interiors of the suction cups 81, and the other ends are fixedly communicated with the folding airbag ring 83.

[0061] Since the semiconductor placed on the rotating gear disk 71 will rotate, in order to ensure the synchronous rotation of the semiconductor and the rotating gear disk 71, it is necessary to strengthen the fixation between the semiconductor and the rotating gear disk 71.

[0062] Before the coating treatment, the semiconductor is placed on the chuck 81. There is no adsorption force between the chuck 81 and the semiconductor. After the reaction gas starts to be introduced, since the gas guide pipe 52 moves downward, it will drive the fixing ring 61 fixedly connected to the gas guide pipe 52 to move downward, increasing the distance between the fixing ring 61 and the limiting ring 13. The folded airbag ring 83 fixed between the fixing ring 61 and the limiting ring 13 is stretched and inflated. The folded airbag ring 83 sucks air from the positions of the plurality of communication pipes 82, thereby pumping out the gas between the chuck 81 and the semiconductor, forming a negative pressure, and adsorbing the semiconductor on the chuck 81, strengthening the fixation of the semiconductor.

[0063] At the same time, when the coating is finished and the plurality of gas guide pipes 52 are separated, the folded airbag ring 83 squeezes and exhausts, so that the chuck 81 and the semiconductor are separated again, facilitating the transfer of the semiconductor.

[0064] Refer to Figure 3 , two bottom grooves are symmetrically opened inside the limiting groove. The bottom grooves are located directly below the jet component 3, and a rotating component 9 is arranged inside the bottom grooves;

[0065] The rotating component 9 includes a driving column 91 and a rotating seat 92. The driving column 91 is fixedly installed inside the bottom groove, and the rotating seat 92 is fixedly connected to the top of the driving column 91.

[0066] When the reaction gas starts to be introduced, by controlling the telescopic movement of the driving column 91, the rotating seat 92 is driven to move upward, so that the rotating seat 92 is fixed to the bottom end of the lowermost gas guide pipe 52. The gas guide pipe 52 is driven to rotate by the rotating seat 92. The lower rotating gas guide pipe 52 drives the gas guide pipe 52 clamped above it to rotate synchronously, so that the jet nozzles 53 installed on the gas guide pipe 52 rotate, and the rotating jet nozzles 53 will uniformly eject the reaction gas.

[0067] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered by the protection scope of the present invention.

Claims

1. A chemical vapor deposition (CVD) device, comprising: A heating layer (1), a processing tank (2), and a gas charging pipe fixedly connected to the upper end of the processing tank (2), characterized in that a rectangular reaction space is arranged inside the heating layer (1), and a plurality of conduits are symmetrically arranged on both sides of the inner wall of the reaction space, and the plurality of conduits are respectively used for introducing gaseous precursors and discharging waste gas; Two sliding grooves (10) are symmetrically formed in the bottom surface of the reaction space, and a limiting groove is formed in the middle of the two sliding grooves (10), and the depth of the limiting groove is greater than the depth of the sliding groove (10); The heating layer (1) is installed inside the processing tank (2), and a plurality of jet components (3) are arranged at the upper end of the heating layer (1), and the plurality of jet components (3) are communicated with the upper gas charging pipe for discharging reaction gas; A plurality of placing components (4) are arranged inside the reaction space, and the placing component (4) includes a plurality of placing plates (41), a plurality of side frames (42) and two sliding blocks (43). The plurality of placing plates (41) are horizontally and fixedly connected between the plurality of side frames (42), and a plurality of placing grooves are annularly formed on the placing plates (41). The two sliding blocks (43) are symmetrically and fixedly connected to the bottom surface of the lowermost placing plate (41) and are slidably arranged inside the sliding grooves (10); An installation opening is formed in the middle of the placing plate (41), and a gas guiding component (5) is arranged inside the installation openings of the plurality of placing plates (41). The gas guiding component (5) includes an installation pipe (51), a gas guiding pipe (52) and a jet head (53). The installation pipe (51) is fixedly installed inside the installation opening, the gas guiding pipe (52) is elastically installed inside the installation pipe (51) through an elastic member (6), and the jet head (53) is fixedly connected to the bottom end of the gas guiding pipe (52); A sliding space is arranged inside the installation pipe (51), and a limiting ring (13) is arranged inside the sliding space. The positions of the limiting rings (13) inside the plurality of installation pipes (51) are different, and the higher the limiting ring (13) is, the closer its position is to the bottom end of the installation pipe (51); The elastic member (6) is arranged inside the sliding space and is located above the limiting ring (13). The elastic member (6) includes a fixing ring (61), a bottom ring (62) and a spring tube (63). The fixing ring (61) is fixedly sleeved on the gas guiding pipe (52), the bottom ring (62) and the spring tube (63) are sleeved on the gas guiding pipe (52), and two ends of the spring tube (63) are fixedly connected to the fixing ring (61) and the bottom ring (62); A linkage component (7) is arranged inside the placement plate (41). The linkage component (7) includes a plurality of rotating gear discs (71), a driving gear disc (72), and a clamping member (73). The plurality of rotating gear discs (71) are respectively rotatably installed inside a plurality of placement grooves. The driving gear disc (72) is rotatably installed inside the installation pipe (51), and a driving port is formed in the middle of the driving gear disc (72). The driving gear disc (72) is meshed with the plurality of rotating gear discs (71) for driving the rotating gear discs (71) to rotate. The clamping member (73) is fixedly connected to the air guide pipe (52). Both the clamping member (73) and the driving port are polygonal, and the clamping member (73) is used to drive the driving gear disc (72) to rotate; The air guiding end of the air jetting component (3) moves downward, driving the air guide pipe (52) to move downward, thereby squeezing and connecting the air guide pipes (52) in the plurality of air guiding components (5).

2. The chemical vapor deposition (CVD) apparatus according to claim 1, characterized in that, The air jetting component (3) includes a connecting pipe (31), an air jetting head (32), and a telescopic extrusion pipe (33). The connecting pipe (31) is fixedly installed on the top wall of the reaction space. The air jetting head (32) is fixedly connected to the bottom end of the connecting pipe (31). The telescopic extrusion pipe (33) is fixedly connected to the bottom end of the air jetting head (32).

3. A chemical vapor deposition (CVD) apparatus according to claim 2, wherein A clamping opening (11) is formed in the air guide pipe (52). A clamping pipe (12) is arranged at the bottom end of the air jetting end head (53). The clamping opening (11), the bottom end of the telescopic extrusion pipe (33), and the clamping pipe (12) are all polygonal for mutual clamping.

4. A chemical vapor deposition (CVD) device according to claim 3, characterized in that, An adsorption component (8) is arranged on the plurality of rotating gear discs (71). The adsorption component (8) is used for adsorbing and fixing the objects placed on the rotating gear discs (71).

5. A chemical vapor deposition (CVD) apparatus according to claim 4, characterized in that, The adsorption component (8) includes a plurality of suction cups (81), a plurality of connecting pipes (82), and a folding airbag ring (83). The plurality of suction cups (81) are fixedly connected to the center of the rotating gear disc (71). The folding airbag ring (83) is sleeved on the air guide pipe (52), and the upper end is rotatably connected to the bottom wall of the driving gear disc (72), and the bottom end is rotatably connected to the fixed ring (61). One ends of the plurality of connecting pipes (31) are respectively rotatably installed at the bottoms of the plurality of rotating gear discs (71) and are internally communicated with the suction cups (81), and the other ends are fixedly communicated with the folding airbag ring (83).

6. A chemical vapor deposition (CVD) device according to claim 1, characterized in that, Two bottom grooves are symmetrically formed inside the limiting groove. The bottom grooves are located directly below the air jetting component (3), and a rotating component (9) is arranged inside the bottom grooves.

7. A chemical vapor deposition (CVD) device according to claim 6, wherein The rotating component (9) includes a driving column (91) and a rotating seat (92). The driving column (91) is fixedly installed inside the bottom groove. The rotating seat (92) is fixedly connected to the top end of the driving column (91).

8. A chemical vapor deposition (CVD) reaction chamber, characterized in that, The CVD reaction chamber is arranged inside the CVD device described in claim 1.

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