Silicon semiconductor gamma dose rate monitoring instrument for online measurement
By using a high-sensitivity silicon semiconductor detector array and temperature sensor, gamma dose rate measurement under low pressure conditions, the stability and sensitivity problems of detectors operating under high pressure conditions in the prior art are solved, and high-precision measurement and multiple signal outputs are achieved in narrow spaces.
Patent Information
- Application Number
- CN202311295974.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-09
- Publication Date
- 2025-04-11
AI Technical Summary
The existing gamma dose rate monitors work under high pressure conditions, have high insulation and stability requirements, are prone to aging, have low sensitivity, are difficult to measure in narrow spaces such as ventilation ducts, and are susceptible to electromagnetic interference.
It adopts a high-sensitivity silicon semiconductor detector array, which is small in size, wide in range, high sensitivity, and good anti-interference. It works under low voltage conditions, combines temperature sensors and FPGA modules for signal processing and calculations, and outputs signals from various interface methods.
It realizes high-precision gamma dose rate measurement in a narrow space, extends the working life of the detector, reduces the impact of noise, enhances anti-interference ability, and supports multiple signal output interfaces.
Smart Images
Figure CN119805530A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of nuclear facility radiation dose rate measurement, and specifically relates to a silicon semiconductor gamma dose rate monitoring instrument for online measurement, which can perform continuous online real-time measurement of the gamma radiation dose rate of a place, environment, equipment, and medium in a ventilation duct. Background Art
[0002] At present, most of the gamma dose rate monitors used in domestic nuclear power plants use gas detector ionization chambers or Geiger-Mueller counters as sensors. Since the gas detectors need to work under high voltage conditions, they have high requirements for the insulation of the detectors and the working stability of the original components. At the same time, the original components are also prone to aging. In addition, due to the low sensitivity of the detectors, large-volume detectors need to be designed to improve the sensitivity, which makes the detectors unable to be used in narrow spaces, such as measuring the radiation dose rate of the ventilation medium in the ventilation duct. At the same time, since one side of the detector outputs extremely weak current, it is easily affected by internal and external electromagnetic interference. Summary of the invention
[0003] The purpose of the present invention is to provide a silicon semiconductor gamma dose rate monitoring instrument for online measurement. The detector has a small size, a wide measuring range, high sensitivity, good anti-interference performance, and works under low pressure conditions. It can meet the measurement of air dose rate in narrow spaces such as ventilation ducts, and can output signals in a variety of interface modes according to user requirements.
[0004] In order to achieve the above object, the technical solution adopted by the present invention is:
[0005] A silicon semiconductor gamma dose rate monitoring instrument for online measurement consists of a silicon semiconductor detector unit, an on-site processing display unit and a junction box unit connected in sequence. The silicon semiconductor detector unit is used to detect the gamma radioactivity at the measurement position and pre-process the signal at the same time. The pre-processed signal is sent to the on-site processing display unit for further data processing and calculation, and is output in different signal transmission modes. The junction box unit is a component of the external power input and signal output interface.
[0006] The silicon semiconductor detector unit includes a silicon semiconductor radiation detector array, a temperature sensor, a high-range signal processing circuit, a high-range signal conversion circuit, a low-range signal processing circuit, a low-range signal conversion circuit, a spare low-range signal processing circuit, a spare low-range signal conversion circuit, and a silicon semiconductor detector unit cable interface; the local processing display unit includes a local processing display unit cable interface, a signal conversion module, an FPGA program control and calculation integration module, a vibration module, a DC power conversion module, an AC / DC conversion module, a relay switch output module, an analog output module, and a 220V AC filter device; the FPGA program control and calculation integration module includes a counting module, a signal output module, an RS232 communication module, an RS485 communication module, and a drive circuit module; the junction box unit includes a relay switch output port, an analog output port, an RS485 communication port, and a 220V external input port.
[0007] The silicon semiconductor radiation detector array consists of 9 high-sensitivity silicon semiconductor sensors arranged on the same plane, of which 8 are used for low-range radiation measurement, 4 are in a group, with a total of two groups, one for working measurement and the other for working standby, and the remaining one is used for high-range radiation measurement.
[0008] The current signal measured by the high-range silicon semiconductor sensor in the silicon semiconductor radiation detector array is processed by the high-range signal processing circuit, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal through the high-range signal conversion circuit, and is connected to the silicon semiconductor detector unit cable interface after the differential signal conversion; the current signal measured by the low-range silicon semiconductor sensor in the silicon semiconductor radiation detector array is processed by the low-range signal processing circuit, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal through the low-range signal conversion circuit, and is connected to the silicon semiconductor detector unit cable interface after the differential signal conversion; the current signal measured by the spare low-range silicon semiconductor sensor in the silicon semiconductor radiation detector array is processed by the spare low-range signal processing circuit, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal through the spare low-range signal conversion circuit, and is connected to the silicon semiconductor detector unit cable interface after the differential signal conversion.
[0009] The comparator threshold is fed back from the local processing display unit through the cable interface of the silicon semiconductor detector unit, and threshold comparison is performed on the threshold comparators in the high-range signal processing circuit, the low-range signal processing circuit, and the spare low-range signal processing circuit respectively, so as to realize filtering and identification of the output signal.
[0010] The temperature sensor is used for real-time measurement of the temperature inside the detector. The temperature sensor measurement value participates in the measurement value compensation to reduce the impact of noise on the measurement value under high temperature conditions. The temperature sensor sends the temperature measurement value signal to the local processing and display unit through the silicon semiconductor detector unit cable interface. The FPGA program control and calculation integration module analyzes the input temperature measurement value and participates in the compensation calculation of the gamma dose rate measurement value.
[0011] The cable interface of the silicon semiconductor detector unit is connected to the cable interface of the local processing and display unit, and is used for power supply, communication and control between the two units; the signal conversion module is used to convert the voltage signals of the high-range signal conversion circuit, the low-range signal conversion circuit and the spare low-range signal conversion circuit into pulse signals; the FPGA program control and calculation integration module is the core module of the local processing and display unit, and is used to process, calculate, output and control signals.
[0012] The counting module receives the pulse count of the signal conversion module and converts it into a dose rate value through an algorithm; the signal output module is used to provide feedback signals and control signals to the silicon semiconductor detector unit through the FPGA program control and calculation integration module and the local processing display unit cable interface; the RS232 communication module and the RS485 communication module are used to establish internal and external communications in accordance with the RS232 and RS485 protocols, and output measurement values, alarm signals and operating status information to the outside in digital form through the protocols; the drive circuit module is used to control the relay switch output module and the analog output module.
[0013] The switch quantity output module outputs the switch quantity signal representing the state to the outside based on the relay, and the analog quantity output module outputs the measured value in the form of 4-20mA continuous value through the established logarithmic conversion formula; the 220V AC filter device is connected to the 220V external input port to filter the interference in the AC power. After filtering, the power supply is connected to the AC-DC conversion module to generate a single-value DC voltage, and then connected to the DC power conversion module. The DC power conversion module converts the single-value DC voltage into DC voltages of different values, which are used to provide working power to different devices in the silicon semiconductor detector unit and the on-site processing display unit.
[0014] The vibration module is used to monitor the vibration environment at the installation location of the on-site processing display unit. Under low-frequency vibration environment conditions, the measured value of the gamma dose rate is compensated and corrected by analyzing and calculating the vibration frequency. When in a high-frequency vibration environment, a vibration parameter alarm will be triggered to prevent false measurement alarms from being triggered; the relay switch output port, analog output port, and RS485 communication port are interfaces for connecting to the outside, each with 3 groups of switch outputs, 2 groups of 4-20mA analog outputs, and 2 groups of RS485 communication protocol outputs, and output signals to the outside through cables; the 220V external input port is the total external power input interface, and the entire set of monitoring instruments can be powered after being connected to a 220V external power supply.
[0015] The beneficial effects achieved by the present invention are:
[0016] It adopts highly sensitive silicon semiconductor array detector with small size, which can be used in narrow space and embedded in ventilation ducts for measurement; the detector and related components adopt low voltage operation, which prolongs the service life of the detector and related original components; the detector has built-in temperature sensor, which can realize compensation and correction of the measured value under high temperature conditions, and reduce the influence of temperature drift and noise of the detector under high temperature conditions; the local processing display unit has built-in FPGA module, which can effectively improve the instrument's computing performance and functions, realize the different functional requirements of multiple users, and effectively reduce circuit design; the instrument adopts low-power processing chips and devices, which reduces the power consumption of the instrument and prolongs the service life of the device; the detector has built-in vibration sensor, which can prevent the false alarm triggering of the instrument measurement value under special vibration environment conditions. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 A schematic diagram of a silicon semiconductor gamma dose rate monitoring instrument for online measurement;
[0018] In the figure: 1. Silicon semiconductor radiation detector array; 2. Temperature sensor; 3. High-range signal processing circuit; 4. High-range signal conversion circuit; 5. Low-range signal processing circuit; 6. Low-range signal conversion circuit; 7. Spare low-range signal processing circuit; 8. Spare low-range signal conversion circuit; 9. Silicon semiconductor detector unit cable interface; 10. On-site processing display unit cable interface; 11. Signal conversion module; 12. Counting module; 13. Signal output module; 14. RS232 communication module; 15. RS485 communication module; 1 6. Driving circuit module; 17. FPGA program control and calculation integrated module; 18. Vibration module; 19. DC power conversion module; 20. AC / DC conversion module; 21. Relay switch output module; 22. Analog output module; 23. 220V AC filter device; 24. Relay switch output port; 25. Analog output port; 26. RS485 communication port; 27. 220V external input port; 101. Silicon semiconductor detector unit; 102. On-site processing display unit; 103. Junction box unit. DETAILED DESCRIPTION
[0019] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments.
[0020] like Figure 1 As shown, the present invention is composed of a silicon semiconductor detector unit 101, an on-site processing and display unit 102, and a junction box unit 103. The silicon semiconductor detector unit 101 is used to detect the gamma radioactivity at the measurement position and pre-process the signal. The pre-processed signal is sent to the on-site processing and display unit 102 for further data processing and calculation, and is output in different signal transmission modes. The junction box unit 103 is a component of the external power input and signal output interface of the silicon semiconductor gamma dose rate monitoring device.
[0021] The silicon semiconductor radiation detector array 1 is composed of 9 highly sensitive silicon semiconductor sensors arranged on the same plane. Among them, 8 highly sensitive silicon semiconductor sensors are used for low-range measurement, 4 in a group, and a total of two groups. One group is for working measurement, and the other group is for working standby. The remaining high-sensitivity sensor is used for high-range radiation measurement. The current signal measured by the high-range silicon semiconductor sensor in the silicon semiconductor radiation detector array 1 is processed by the high-range signal processing circuit 3, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal through the high-range signal conversion circuit 4, and is connected to the silicon semiconductor detector unit cable interface 9 after differential signal conversion. The current signal measured by the low-range silicon semiconductor sensor in the silicon semiconductor radiation detector array 1 is processed by the low-range signal processing circuit 5, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal through the low-range signal conversion circuit 6, and is connected to the silicon semiconductor detector unit cable interface 9 after differential signal conversion. The current signal measured by the spare low-range silicon semiconductor sensor in the silicon semiconductor radiation detector array 1 is processed by the spare low-range signal processing circuit 7, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal by the spare low-range signal conversion circuit 8, and is connected to the silicon semiconductor detector unit cable interface 9 after differential signal conversion. The comparator threshold is fed back from the local processing and display unit 102 through the silicon semiconductor detector unit cable interface 9, and the threshold comparator in the high-range signal processing circuit 3, the low-range signal processing circuit 5, and the spare low-range signal processing circuit 7 is respectively compared to realize filtering and discrimination of the output signal. The temperature sensor 2 is used for real-time measurement of the internal temperature of the detector. The temperature sensor measurement value participates in the measurement value compensation of the silicon semiconductor γ dose rate monitoring device, and is used to reduce the influence of noise on the measurement value under high temperature conditions. The temperature sensor 2 sends the temperature measurement value signal to the local processing and display unit 102 through the silicon semiconductor detector unit cable interface 9, and the FPGA program control and calculation integration module 17 analyzes the input temperature measurement value and participates in the compensation calculation of the γ dose rate measurement value. The silicon semiconductor detector unit cable interface 9 is connected to the local processing display unit cable interface 10, and is used for power supply, communication and control between the silicon semiconductor detector unit 101 and the local processing display unit 102. The signal conversion module 11 is used to convert the voltage signal of the high-range signal conversion circuit 4, the low-range signal conversion circuit 6, and the spare low-range signal conversion circuit 8 into a pulse signal. The FPGA program control and calculation integrated module 17 is the core module of the local processing display unit 102, which is used to process, calculate, output and control the signal, including a counting module 12, a signal output module 13, an RS232 communication module 14, an RS485 communication module 15, and a driving circuit module 16.The counting module 12 receives the pulse count of the signal conversion module 11 and converts it into a dose rate value through an algorithm. The signal output module 13 is used to provide feedback signals and control signals to the silicon semiconductor detector unit 101 through the silicon semiconductor detector unit cable interface 9 and the local processing display unit cable interface 10 from the FPGA program control and calculation integration module 17. The RS232 communication module 14 and the RS485 communication module 15 are used to establish internal and external communications according to the RS232 and RS485 protocols. Through the protocols, various information such as the measured value, alarm signal and operating status of the silicon semiconductor gamma dose rate monitoring device can be output to the outside in a digital manner. The drive circuit module 16 is used to control the relay switch output module 21 and the analog output module 22. The switch output module 21 outputs a switch signal representing the state to the outside based on the relay. The analog output module 22 is used to output the measured value of the silicon semiconductor gamma dose rate monitoring device in a 4-20mA continuous value manner through a predetermined logarithmic conversion formula. The 220V AC filter device 23 is connected to the 220V external input port 27 to filter the interference in the AC power. After filtering, the power supply is connected to the AC-DC conversion module 20 to generate a single-value DC voltage, and then connected to the DC power conversion module 19. The DC power conversion module 19 converts the single-value DC voltage into DC voltages of different values, which are used to provide working power to different devices in the silicon semiconductor detector unit 101 and the local processing display unit 102. The vibration module 18 is used to monitor the vibration environment at the installation location of the local processing display unit 102. Under low-frequency vibration environment conditions, the measured value of the gamma dose rate is compensated and corrected by analyzing and calculating the vibration frequency. When in a high-frequency vibration environment, the vibration parameter alarm of the silicon semiconductor gamma dose rate monitoring device will be triggered to prevent the measurement of false alarm triggering. The relay switch output port 24, the analog output port 25, and the RS485 communication port 26 are interfaces connected to the outside, respectively having 3 groups of switch outputs, 2 groups of 4-20mA analog outputs, and 2 groups of RS485 communication protocol outputs, and the signal can be output to the outside through a cable. The 220V external input port 27 is the total external power input interface of the silicon semiconductor gamma dose rate monitoring device. After being connected to a 220V external power source, the power supply of the entire device can be realized.
[0022] The present invention provides a detection instrument based on silicon semiconductor as a sensitive element. Compared with traditional gas detectors, the detector has small size, wide measuring range, high sensitivity, good anti-interference performance, and works under low pressure conditions. It can meet the measurement of air dose rate in narrow spaces such as ventilation ducts, and can output signals in a variety of interface modes according to user needs. At present, nuclear power plants have a wide demand for gamma dose rate measurement, and the present invention has good application prospects in nuclear facilities. By designing a silicon semiconductor detector array, combined with a temperature sensor, a self-test module, and a data conversion module integrated on one side of the detector, data is transmitted with an on-site processing unit via a cable, and the signal is processed and calculated through the FPGA module in the on-site processing unit. The various functions of the instrument and the control signal output are realized through the embedded program inside the instrument, thereby realizing online continuous real-time measurement of the on-site dose rate.
Claims
1. A silicon semiconductor gamma dose rate monitoring instrument for online measurement, characterized in that: It consists of a silicon semiconductor detector unit, an on-site processing and display unit and a junction box unit connected in sequence. The silicon semiconductor detector unit is used to detect the gamma radioactivity at the measurement position and pre-process the signal at the same time. The pre-processed signal is sent to the on-site processing and display unit for further data processing and calculation, and output in different signal transmission modes. The junction box unit is a component of the external power input and signal output interface.
2. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 1, characterized in that: The silicon semiconductor detector unit includes a silicon semiconductor radiation detector array, a temperature sensor, a high-range signal processing circuit, a high-range signal conversion circuit, a low-range signal processing circuit, a low-range signal conversion circuit, a spare low-range signal processing circuit, a spare low-range signal conversion circuit, and a silicon semiconductor detector unit cable interface; the local processing display unit includes a local processing display unit cable interface, a signal conversion module, an FPGA program control and calculation integration module, a vibration module, a DC power conversion module, an AC / DC conversion module, a relay switch output module, an analog output module, and a 220V AC filter device; the FPGA program control and calculation integration module includes a counting module, a signal output module, an RS232 communication module, an RS485 communication module, and a drive circuit module; the junction box unit includes a relay switch output port, an analog output port, an RS485 communication port, and a 220V external input port.
3. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 2, characterized in that: The silicon semiconductor radiation detector array consists of 9 high-sensitivity silicon semiconductor sensors arranged on the same plane, of which 8 are used for low-range radiation measurement, 4 are in a group, with a total of two groups, one for working measurement and the other for working standby, and the remaining one is used for high-range radiation measurement.
4. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 3 is characterized in that: The current signal measured by the high-range silicon semiconductor sensor in the silicon semiconductor radiation detector array is processed by the high-range signal processing circuit, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal by the high-range signal conversion circuit, and is connected to the silicon semiconductor detector unit cable interface after the differential signal conversion; The current signal measured by the low-range silicon semiconductor sensor in the silicon semiconductor radiation detector array is processed by the low-range signal processing circuit, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal by the low-range signal conversion circuit, and is connected to the silicon semiconductor detector unit cable interface after the differential signal conversion; The current signal measured by the spare low-range silicon semiconductor sensor in the silicon semiconductor radiation detector array is processed by the spare low-range signal processing circuit, and is converted into a voltage pulse signal through current / voltage conversion, amplification, discrimination, and shaping. The voltage pulse signal is converted into a differential signal by the spare low-range signal conversion circuit, and after the differential signal conversion, it is connected to the silicon semiconductor detector unit cable interface.
5. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 4, characterized in that: The comparator threshold is fed back from the local processing display unit through the cable interface of the silicon semiconductor detector unit, and threshold comparison is performed on the threshold comparators in the high-range signal processing circuit, the low-range signal processing circuit, and the spare low-range signal processing circuit respectively, so as to realize filtering and identification of the output signal.
6. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 5, characterized in that: The temperature sensor is used for real-time measurement of the temperature inside the detector. The temperature sensor measurement value participates in the measurement value compensation to reduce the impact of noise on the measurement value under high temperature conditions. The temperature sensor sends the temperature measurement value signal to the local processing and display unit through the silicon semiconductor detector unit cable interface. The FPGA program control and calculation integration module analyzes the input temperature measurement value and participates in the compensation calculation of the gamma dose rate measurement value.
7. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 6, characterized in that: The cable interface of the silicon semiconductor detector unit is connected to the cable interface of the local processing and display unit, and is used for power supply, communication and control between the two units; the signal conversion module is used to convert the voltage signals of the high-range signal conversion circuit, the low-range signal conversion circuit and the spare low-range signal conversion circuit into pulse signals; the FPGA program control and calculation integration module is the core module of the local processing and display unit, and is used to process, calculate, output and control signals.
8. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 7, characterized in that: The counting module receives the pulse count of the signal conversion module and converts it into a dose rate value through an algorithm; the signal output module is used to provide feedback signals and control signals to the silicon semiconductor detector unit through the FPGA program control and calculation integration module and the local processing display unit cable interface; the RS232 communication module and the RS485 communication module are used to establish internal and external communications in accordance with the RS232 and RS485 protocols, and output measurement values, alarm signals and operating status information to the outside in digital form through the protocols; the drive circuit module is used to control the relay switch output module and the analog output module.
9. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 8, characterized in that: The switch quantity output module outputs the switch quantity signal representing the state to the outside based on the relay, and the analog quantity output module outputs the measured value in the form of 4-20mA continuous value through the established logarithmic conversion formula; the 220V AC filter device is connected to the 220V external input port to filter the interference in the AC power. After filtering, the power supply is connected to the AC-DC conversion module to generate a single-value DC voltage, and then connected to the DC power conversion module. The DC power conversion module converts the single-value DC voltage into DC voltages of different values, which are used to provide working power to different devices in the silicon semiconductor detector unit and the on-site processing display unit.
10. The silicon semiconductor gamma dose rate monitoring instrument for online measurement according to claim 9, characterized in that: The vibration module is used to monitor the vibration environment where the local processing display unit is installed. In low-frequency vibration environments, the measured value of the gamma dose rate is compensated and corrected by analyzing and calculating the vibration frequency. When in high-frequency vibration environments, the vibration parameter alarm is triggered to prevent false alarms from being triggered. The electrical switch output port, analog output port, and RS485 communication port are interfaces for connecting to the outside. It has 3 sets of switch output, 2 sets of 4-20mA analog output and 2 sets of RS485 communication protocol output. The signal is output to the outside through the cable; the 220V external input port is the total external power input interface. After connecting to the 220V external power supply, the whole set of monitoring instruments can be powered.