Mask structure and manufacturing method of circuit trace

Abstract

The application discloses a mask structure and a manufacturing method of circuit traces. The mask structure comprises a light shielding part and a light transmitting part. The light shielding part comprises a first transfer part, a second transfer part and a separation part. The first transfer part and the second transfer part are adjacent and spaced apart. The first transfer part and the second transfer part are used for forming different circuit traces respectively. The interval between the first transfer part and the second transfer part is less than or equal to 3 microns. The separation part is arranged between the first transfer part and the second transfer part and along the length direction of the first transfer part and the second transfer part. The first transfer part and the second transfer part are spaced apart from the separation part. The width of the separation part is 0.5 microns to 1 micron. The application arranges the separation part between the two spaced apart transfer parts, so that the light intensity distribution in the exposure process becomes more concentrated, the exposure effect is better, and short circuit between adjacent circuit traces is avoided. The yield of the driving circuit matrix is improved, and the display quality is optimized.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, specifically to a method for manufacturing a mask structure and circuit traces. Background Technology

[0002] As the display market continues to advance, the demand for high-resolution products is increasing year by year, which means that the pixel size of new product designs will become smaller and smaller. The light-emitting diodes of Micro-LED (Micro Light-Emitting Diode) are generally small, so the circuit traces need to be more and more refined. The circuit traces prepared by the mask in related technologies are prone to short circuits or open circuits, and the cost of higher specification mask masks increases significantly. Summary of the Invention

[0003] In view of this, this application provides a method for manufacturing a mask structure and circuit traces to solve the problems in the prior art where circuit traces prepared by mask fabrication are prone to short circuits or open circuits, and where higher-specification mask fabrications are expensive.

[0004] To address the aforementioned technical problems, the first technical solution provided in this application is: to provide a photomask structure, including a light-blocking portion and a light-transmitting portion, wherein the light-blocking portion includes:

[0005] A first transfer section and a second transfer section are arranged adjacently and at intervals, and the first transfer section and the second transfer section are respectively used to form different circuit traces; wherein, the distance between the first transfer section and the second transfer section is less than or equal to 3 micrometers;

[0006] An isolation section is disposed between the first transfer section and the second transfer section, and is disposed along the length direction of the first transfer section and the second transfer section; the first transfer section and the second transfer section are both spaced apart from the isolation section;

[0007] The width of the isolation section is 0.5 micrometers to 1 micrometer.

[0008] Furthermore, a first gap is formed between the first transfer portion and the isolation portion, and a second gap is formed between the second transfer portion and the isolation portion, wherein the first gap and the second gap have the same width.

[0009] Furthermore, the isolation portion has a plurality of spaced-apart first notches along one side near the first transfer portion; and / or

[0010] The isolation section has multiple spaced second notches on the other side near the second transfer section.

[0011] Furthermore, the isolation portion has a plurality of spaced-apart first notches on one side near the first transfer portion; the isolation portion has a plurality of spaced-apart second notches on the other side near the second transfer portion; wherein,

[0012] The adjacent first notch and second notch are completely offset in the width direction of the first transfer portion and the second transfer portion; or,

[0013] The adjacent first gap and second gap are only partially overlapped in the width direction of the first transfer portion and the second transfer portion.

[0014] Furthermore, the isolation section includes:

[0015] Body part;

[0016] A plurality of first protrusions spaced apart are located on one side of the main body near the first transfer part, and / or a plurality of second protrusions spaced apart are located on the other side of the main body near the second transfer part;

[0017] Wherein, when the isolation portion has the first protrusion and the second protrusion, the first protrusion and the second protrusion are misaligned in the width direction of the first transfer portion and the second transfer portion; or, the first protrusion and the second protrusion are alternately and partially overlapped in the width direction of the first transfer portion and the second transfer portion.

[0018] Furthermore, the isolation section includes a plurality of spaced-apart first sub-isolation sections and a plurality of spaced-apart second sub-isolation sections. The first sub-isolation sections and the second sub-isolation sections are mirror images of each other, and the edges of the first sub-isolation sections near the second sub-isolation sections only partially overlap with the edges of the second sub-isolation sections near the first sub-isolation sections.

[0019] Furthermore, the mask structure also includes: a third transfer section, the third transfer section comprising:

[0020] A first extension and a second extension are arranged to intersect each other, and the connection between the first extension and the second extension has an opening located on the reverse extension line of the angle bisector of the interior angle formed by the first extension and the second extension.

[0021] Wherein, the width of the first extension along the first direction is the first width, and the width of the second extension along the second direction is the second width; the width of the opening along the first direction is 1 / 20 to 1 / 10 of the first width; and the width of the opening along the second direction is 1 / 20 to 1 / 10 of the second width.

[0022] Furthermore, the mask structure also includes:

[0023] A fourth transfer section; along the width direction of the fourth transfer section, a plurality of third protrusions are provided on the first side of the fourth transfer section, and the bottoms of adjacent third protrusions are connected to each other; wherein, the width of the fourth transfer section is less than or equal to 3 micrometers, and the distance between the tops of two adjacent third protrusions is 0.5 to 1.5 times the width of the fourth transfer section.

[0024] Furthermore, along the width direction of the fourth transfer portion, the second side of the fourth transfer portion has a plurality of fourth protrusions, wherein the second side is disposed opposite to the first side, and the plurality of fourth protrusions are symmetrically disposed with respect to the plurality of third protrusions;

[0025] The distance between the tops of the symmetrically arranged third and fourth protrusions is 1.2 to 1.6 times the width of the fourth transfer portion.

[0026] To solve the above-mentioned technical problems, the second technical solution provided in this application is: a method for manufacturing circuit traces, comprising:

[0027] A substrate is provided, the surface of which is covered with a conductive layer;

[0028] A photoresist layer is applied to the surface of the conductive layer away from the substrate;

[0029] The photoresist layer is patterned by exposing the photoresist layer using a mask as described in any of the above embodiments;

[0030] Using the patterned photoresist layer as a mask, the conductive layer is etched to form a pattern on the conductive layer corresponding to the transfer portion; and...

[0031] Remove the photoresist layer.

[0032] The beneficial effects of this application are as follows: Unlike existing technologies, the mask structure of this application can include a light-shielding part and a light-transmitting part. The light-shielding part includes: an adjacent and spaced-apart first transfer part and a second transfer part, and an isolation part. The first transfer part and the second transfer part are used to form different circuit traces, wherein the distance between the first transfer part and the second transfer part is less than or equal to 3 micrometers. The isolation part is disposed between the first transfer part and the second transfer part and is disposed along the length direction of the first transfer part and the second transfer part. Both the first transfer part and the second transfer part are spaced apart from the isolation part. The width of the isolation part is 0.5 micrometers to 1 micrometer. This application sets an isolation part between the two spaced-apart transfer parts, thereby making the light intensity distribution more concentrated in the exposure process, resulting in better exposure effect and avoiding short circuits caused by the close proximity of adjacent circuit traces. The mask pattern of the circuit traces is finely designed, so that the circuit traces exposed by ordinary masks can be comparable to the effect of high-specification masks, thereby effectively improving the yield of Micro-LED driving circuit matrix and optimizing display quality without increasing product cost. Attached Figure Description

[0033] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a partial structural schematic diagram of the photomask provided in the first embodiment of this application;

[0035] Figure 2 yes Figure 1 The enlarged structural diagram of part A in the diagram shows that the isolation part structure is the first structural diagram of the isolation part provided in the first embodiment of this application.

[0036] Figure 3 This is a schematic diagram comparing the light intensity of a mask with an isolation section provided in this application and a mask without an isolation section in the comparative example; wherein Figure 3 (a) is a mask without an isolation section in the comparative example; Figure 3 (b) is the mask plate with the isolation section provided in this application;

[0037] Figure 4 This is a schematic diagram of a second structure of the isolation section provided in the first embodiment of this application, wherein, Figure 4 (a) means that a gap is formed only on one side of the isolation section near the first or second transfer section. Figure 4(b) and (c) are examples of forming a first gap on one side of the isolation section near the first transfer section and forming a second gap on the other side of the isolation section near the second transfer section. Figure 4 In (b) and (c), the first and second gaps are both set in a staggered manner;

[0038] Figure 5 This is a schematic diagram of a second structure of the isolation section provided in the first embodiment of this application, wherein... Figure 5 In (a) and (b), the first and second gaps are partially overlapped;

[0039] Figure 6 This is a schematic diagram of a third structure of the isolation section provided in the first embodiment of this application, wherein, Figure 6 (a) is a protrusion provided only on one side of the isolation section near the first or second transfer section. Figure 6 (b) and (c) involve providing a first protrusion on one side of the isolation section near the first transfer section, and a second protrusion on the other side of the isolation section near the second transfer section. Figure 6 In (b) and (c), the first and second protrusions are both staggered.

[0040] Figure 7 This is a schematic diagram of a third structure of the isolation section provided in the first embodiment of this application, wherein... Figure 7 In (a) and (b), the first protrusion and the second protrusion are partially overlapped;

[0041] Figure 8 This is a schematic diagram of the fourth structure of the isolation section provided in the first embodiment of this application;

[0042] Figure 9 This is a schematic diagram of the structure of the third transfer unit and the circuit wiring formed therefrom provided in the second embodiment of this application;

[0043] Figure 10 This is a comparative example of the transfer section structure and its circuit wiring diagram provided in the second embodiment of this application for the third transfer section;

[0044] Figure 11 This is a first comparative example of the photomask provided in this application and an image of the circuit traces formed by exposing it;

[0045] Figure 12 This is a second comparative example of the photomask provided in this application and an image of the circuit traces formed by exposing it;

[0046] Figure 13 This is a partial schematic diagram of the first structure of the fourth transfer unit provided in the third embodiment of this application;

[0047] Figure 14This is a schematic diagram of the second structure of the fourth transfer unit provided in the third embodiment of this application;

[0048] Figure 15 yes Figure 14 An enlarged structural diagram of part C in the diagram;

[0049] Figure 16 This is a comparison diagram of the light intensity distribution of a comparative photomask and the photomask of this application during the exposure process; wherein, the left side is the light intensity distribution diagram corresponding to the photomask of this application, and the right side is the light intensity distribution diagram corresponding to the comparative photomask.

[0050] Figure 17 This is a flowchart of a method for manufacturing circuit traces according to an embodiment of this application;

[0051] Figure 18 This is a process flow diagram of a method for manufacturing circuit traces provided in an embodiment of this application.

[0052] Explanation of reference numerals in the attached figures:

[0053] 100. Mask; L. Length direction; W1. Width direction of the first and second transfer parts; W2. Width direction of the fourth transfer part; 10. Light-shielding part; 20. Gap; 21. First gap; 22. Second gap; 11. First transfer part; 12. Second transfer part; 13. Isolation part; 130. Body part; 131. First notch; 132. Second notch; 133. First protrusion; 134. Second protrusion; 135. First sub-isolation part; 136. Second sub-isolation section; 14. Third transfer section; 141. First extension section; 142. Second extension section; 15. Opening; 16. Circuit trace; 17. Fourth transfer section; 17a. First light intensity pattern; 17b. Second light intensity pattern; 171. First side; 172. Second side; 173. Third protrusion; 174. Fourth protrusion; 175. End; 30a. Pattern; 30b. Recess; 41. Substrate; 42. Conductive layer; 43. Photoresist layer. Detailed Implementation

[0054] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0055] The terms "first" and "second" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications will also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0056] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0057] During the research process of this application, it was found that as the display market continues to advance, the demand for high-resolution products is increasing year by year. This means that the pixel size of newly designed products will become smaller and smaller. Micro-LED light-emitting chips are generally small, for example, less than 100 micrometers, which perfectly meets the market demand for small pixel size. Therefore, the pixel size of Micro-LED display technology is generally around 100 micrometers. Designing complex circuit traces to drive LED chips to emit light within such a small area requires increasingly fine circuit traces to be "horizontally and vertically straight" and to avoid short circuits or open circuits.

[0058] To meet the demand for such refined routing, the current practice is to use higher-specification photomasks for exposure. However, the disadvantage of higher-specification photomasks is the significantly increased cost, approximately 2-3 times that of ordinary photomasks, resulting in a high overall product cost. Higher-specification photomasks require two additional manufacturing processes compared to ordinary photomasks: two coating processes and two different target materials. Ordinary photomasks only require one coating process, one target material, and one drawing process. It is evident that higher-specification photomasks involve an additional material, offer better precision, and are therefore more expensive.

[0059] To address the aforementioned issues, this application features a refined design of the photomask pattern for circuit traces. This allows circuit traces exposed using ordinary photomasks to achieve results comparable to those exposed using high-specification photomasks, thereby effectively improving the yield of the Micro-LED driver circuit matrix and optimizing display quality without increasing product costs. The photomask structure of this application is described in detail below through specific embodiments, with the embodiments divided according to different transfer section structures on the photomask.

[0060] First embodiment: Mask structure design for two adjacent different circuit traces.

[0061] Please see Figures 1-3 , Figure 1 This is a partial structural schematic diagram of the photomask provided in the first embodiment of this application; Figure 2 yes Figure 1 The enlarged structural diagram of part A in the diagram shows that the structure of the isolation part is the first structural diagram of the isolation part provided in the first embodiment of this application. Figure 3 This is a schematic diagram comparing the light intensity of a mask with an isolation section provided in this application and a mask without an isolation section in the comparative example; wherein Figure 3 (a) is a mask without an isolation section in the comparative example; Figure 3 (b) is the mask plate for setting the isolation section provided in this application.

[0062] The mask 100 structure provided in the first embodiment may include a light-shielding portion 10 and a light-transmitting portion. The light-shielding portion 10 includes: a first transfer portion 11 and a second transfer portion 12 arranged adjacently and spaced apart, and an isolation portion 13. The first transfer portion 11 and the second transfer portion 12 are respectively used to form different circuit traces, such as for different signal lines. This application mainly solves the problem of small-size, small-pixel-size circuit traces 16 in Micro-LEDs. In small-size display panels, such as children's watches and sports watches, circuit traces 16 need to be fabricated on a very small substrate. Therefore, the circuit traces 16 need to be thinner, and the spacing between adjacent circuit traces 16 needs to be smaller. Consequently, the spacing between two adjacent transfer portions on the mask 100 corresponding to adjacent circuit traces 16 is also smaller. When the spacing between two adjacent transfer portions is less than a certain range, the circuit traces 16 fabricated by photolithography are prone to short circuits. The spacing range provided in this application can be that the spacing between the first transfer portion 11 and the second transfer portion 12 is less than or equal to 3 micrometers. For example, 0.5 micrometers, 1 micrometer, 1.5 micrometers, 2 micrometers, 2.5 micrometers, etc.

[0063] An isolation section 13 is disposed between the first transfer section 11 and the second transfer section 12, and is disposed along the length direction L of the first transfer section 11 and the second transfer section 12. That is, the extension direction of the isolation section 13 is the same as the extension direction of the first transfer section 11 and the second transfer section 12. When the first transfer section 11 and the second transfer section 12 are bent, the isolation section 13 is also bent. The first transfer section 11 and the second transfer section 12 are both spaced apart from the isolation section 13. It can be understood that after the isolation section 13 is disposed, the first transfer section 11 and the second transfer section 12 are still spaced apart from each other and do not contact the isolation section 13. The isolation section 13 is disposed between the two spaced transfer sections, thereby making the light intensity distribution in the exposure process more concentrated, the exposure effect better, and avoiding short circuits caused by the close proximity of adjacent circuit traces 16.

[0064] In this embodiment, the width of the isolation portion 13 can be 0.5 micrometers to 1 micrometer, so that when the isolation portion 13 is disposed between the first transfer portion 11 and the second transfer portion 12, it can remain in contact with neither the first transfer portion 11 nor the second transfer portion 12. At the same time, the width of the isolation portion 13 is small enough that it will not be exposed to form a trace.

[0065] In this embodiment, the first transfer section 11 and the second transfer section 12 have a gap 20 between them, a first gap 21 is formed between the first transfer section 11 and the isolation section 13, and a second gap 22 is formed between the second transfer section 12 and the isolation section 13. The first gap 21 and the second gap 22 have the same width. This allows the light used for exposure to pass through the first gap 21 and the second gap 22 respectively during the exposure process. After passing through the first gap 21 and the second gap 22, the light intensity is diffracted and superimposed, making the photoresist between the first transfer section 11 and the second transfer section 12 fully photosensitive. The resulting circuit trace 16 is closer to the preset pattern.

[0066] In the first structure of this embodiment, as Figure 2 As shown, one side of the isolation section 13 near the first transfer section 11 and the other side near the second transfer section 12 are both straight lines. The straight isolation section 13 has the advantage of being easier to manufacture.

[0067] like Figure 3 As shown, Figure 3 The curve is a graph showing the change in light intensity during the exposure process, where... Figure 3 In comparative example (a), no isolation section 13 is provided between the first transfer section 11 and the second transfer section 12. It can be seen that the exposed light intensity distribution is scattered and the light intensity is weak, which makes it easy for adjacent circuit traces to stick together, leading to short circuits. Figure 3As shown in (b), this application provides an isolation section 13. It can be seen that providing an isolation section 13 can make the exposed light intensity significantly stronger and the light intensity distribution more concentrated, resulting in a better exposure effect and avoiding the problem of adjacent circuit traces sticking together and causing short circuits.

[0068] Please see Figures 4-5 , Figure 4 This is a schematic diagram of a second structure of the isolation section provided in the first embodiment of this application, wherein, Figure 4 (a) means that a gap is formed only on one side of the isolation section near the first or second transfer section. Figure 4 (b) and (c) are examples of forming a first gap on one side of the isolation section near the first transfer section and forming a second gap on the other side of the isolation section near the second transfer section. Figure 4 In (b) and (c), the first and second gaps are both set in a staggered manner; Figure 5 This is a schematic diagram of a second structure of the isolation section provided in the first embodiment of this application, wherein... Figure 5 In (a) and (b), the first and second gaps are partially overlapped.

[0069] In the second structure of this embodiment, the isolation portion 13 has a plurality of spaced first notches 131 on one side near the first transfer portion 11; and / or the isolation portion 13 has a plurality of spaced second notches 132 on the other side near the second transfer portion 12. That is, in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, as shown... Figure 4 As shown, the isolation portion 13 can have a notch on one side or on both sides. In this structure, the width of the isolation portion 13 itself can be made slightly larger, for example, 1 micrometer, to ensure that the isolation portion 13 has a certain connection strength and remains unbroken when there is a notch on one or both sides. The isolation portion 13 with the notch design allows more light to pass through, effectively increasing the light intensity in the exposure process, while also preventing the isolation portion 13 from being exposed and forming traces. The light intensity variation can be referenced. Figure 3 As shown.

[0070] like Figure 4 As shown, the shapes of the first notch 131 and the second notch 132 can be rectangular, arc-shaped, trapezoidal, or triangular, etc., and this application does not make specific limitations in this regard.

[0071] Furthermore, in the second structure of this embodiment, the isolation portion 13 has a plurality of spaced first notches 131 on one side near the first transfer portion 11; the isolation portion 13 has a plurality of spaced second notches 132 on the other side near the second transfer portion 12. Adjacent first notches 131 and second notches 132 are completely misaligned in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, that is, the first notches 131 and the second notches 132 do not coincide at all in the width direction W1 of the first transfer portion 11 and the second transfer portion 12.

[0072] Alternatively, the projections of adjacent first notches 131 and second notches 132 onto the sides of the width direction W1 of the first transfer portion 11 and the second transfer portion 12 may only partially overlap. The first and second notches 131 and 132, which are either completely misaligned or only partially overlapping, can ensure the strength of the isolation portion 13 and prevent breakage, while also enhancing the light intensity during the exposure process.

[0073] In one specific embodiment, such as Figure 5 As shown in (a), the first gap 131 and the second gap 132 can both be triangles, and the triangles are isosceles triangles with a base angle of 45°.

[0074] Please see Figures 6-7 , Figure 6 This is a schematic diagram of a third structure of the isolation section provided in the first embodiment of this application, wherein, Figure 6 (a) is a protrusion provided only on one side of the isolation section near the first or second transfer section. Figure 6 (b) and (c) involve providing a first protrusion on one side of the isolation section near the first transfer section, and a second protrusion on the other side of the isolation section near the second transfer section. Figure 6 In (b) and (c), the first and second protrusions are both staggered. Figure 7 This is a schematic diagram of a third structure of the isolation section provided in the first embodiment of this application, wherein... Figure 7 In (a) and (b), the first protrusion and the second protrusion are partially overlapped.

[0075] In the third structure of this embodiment, as Figure 6 As shown, the isolation portion 13 includes a body portion 130, and a plurality of spaced-apart first protrusions 133 located on one side of the body portion 130 near the first transfer portion 11, and / or a plurality of spaced-apart second protrusions 134 located on the other side of the body portion 130 near the second transfer portion 12. Figure 6As shown, that is, in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, the body portion 130 of the isolation portion 13 may have a protrusion on one side or both sides. In this structure, the width of the body portion 130 can be made slightly smaller, for example, 0.6 micrometers, so that the sum of the widths of the body portion 130 and the protrusions does not exceed the preset maximum value (i.e., 1 micrometer) of the isolation portion 13. The isolation portion 13 with the protrusion design can allow more light to pass through, effectively increasing the light intensity in the exposure process, while also preventing the isolation portion 13 from being exposed and forming traces. Figure 6 As shown, the first protrusion 133 and the second protrusion 134 can be rectangular, arc-shaped, trapezoidal, or triangular, etc., and this application does not make specific limitations in this regard.

[0076] Specifically, such as Figure 6 As shown in (b) and (c), when the isolation portion 13 has a first protrusion 133 and a second protrusion 134, the first protrusion 133 and the second protrusion 134 are misaligned in the width direction W1 of the first transfer portion 11 and the second transfer portion 12, that is, the first protrusion 133 and the second protrusion 134 do not overlap at all in the width direction W1 of the first transfer portion 11 and the second transfer portion 12.

[0077] Or, such as Figure 5 As shown, the first protrusion 133 and the second protrusion 134 are alternately and partially overlapped in the width direction W1 of the first transfer portion 11 and the second transfer portion 12. Alternating arrangement can be understood as follows: for example, in the length direction L of the first transfer portion 11 and the second transfer portion 12, one of the first protrusion 133 and the second protrusion 134 is first set on one of the two sides of the main body portion 130, then the other is set, and so on, in a cyclical alternation. The first protrusion 133 and the second protrusion 134 are only partially overlapped in the width direction W1 to avoid the problem of breakage due to the connection point being too thin. The light intensity variation can be referenced... Figure 3 As shown.

[0078] like Figure 6 As shown in (c), both the first protrusion 133 and the second protrusion 134 are triangles, and the triangles are isosceles triangles with a base angle of 45°.

[0079] Please see Figure 8 , Figure 8 This is a schematic diagram of the fourth structure of the isolation section provided in the first embodiment of this application.

[0080] In the fourth structure of this embodiment, as Figure 8As shown, the isolation section 13 includes multiple spaced-apart first sub-isolation sections 135 and multiple spaced-apart second sub-isolation sections 136, with the shapes of the first sub-isolation sections 135 and second sub-isolation sections 136 being mirror images of each other. In the width direction W1 of the first transfer section 11 and the second transfer section 12, the edges of the first sub-isolation sections 135 near the second sub-isolation sections 136 and the edges of the second sub-isolation sections 136 near the first sub-isolation sections 135 only partially overlap, forming a closed shape. The first sub-isolation sections 135 and second sub-isolation sections 136 can be rectangular, arc-shaped, trapezoidal, or triangular, etc. Preferably, the first sub-isolation sections 135 and second sub-isolation sections 136 are isosceles triangles with a base angle of 45°, and the bases of the two isosceles triangles contact each other and partially overlap. This ensures the strength of the isolation section 13 and prevents breakage, while also enhancing the light intensity during the exposure process. The light intensity variation can be referenced... Figure 3 As shown. Figure 8 As shown, it can be seen that in the width direction W1 of the first transfer section 11 and the second transfer section 12, the first sub-isolation section 135 and the second sub-isolation section 136 have partially overlapping positions, such as the area corresponding to a.

[0081] Second embodiment: Refined design of corners in the photomask.

[0082] Please see Figures 9-10 , Figure 9 This is a schematic diagram of the structure of the third transfer unit and the circuit wiring formed therefrom provided in the second embodiment of this application; Figure 10 This is a comparative schematic diagram of the structure of the third transfer section provided in this application and the circuit routing diagram of the resulting section.

[0083] In this embodiment, the mask 100 structure may further include a third transfer portion 14, which includes a first extension 141 and a second extension 142 that are arranged intersecting each other. The connection between the first extension 141 and the second extension 142 has an opening 15 located on the reverse extension line of the angle bisector of the interior angle formed by the first extension 141 and the second extension 142. Specifically, the first extension 141 and the second extension 142 are arranged perpendicularly, and the opening 15 is located at the right-angle corner formed by the first extension 141 and the second extension 142.

[0084] Specifically, the width of the first extension 141 along the first direction is defined as the first width, and the width of the second extension 142 along the second direction is defined as the second width; the width of the opening 15 along the first direction is 1 / 20 to 1 / 10 of the first width; and the width of the opening 15 along the second direction is 1 / 20 to 1 / 10 of the second width. For example, when the first width and the second width are 3 micrometers, the width of the opening 15 along the first direction and the width along the second direction are both 3 / 20 to 3 / 10.

[0085] Please refer to the above. Figure 9 and Figure 10 It is known that this application Figure 9 The third transfer section 14 compared to the comparative example Figure 10 The mask 100 has the aforementioned opening 15 at a right-angle corner. Figure 10 The corners of the circuit traces 16 exposed by the mask 100 in the image are rounded, as shown in the image. Figure 10 As shown at position B2, the pattern differs significantly from that of the photomask 100 itself. This application incorporates an opening 15 at the corner of the first extension 141 and the second extension 142, resulting in a wider and stronger light intensity distribution range, thus improving the exposure accuracy of the circuit trace 16. (Reference) Figure 9 At position B1, it can be seen that the corner of the circuit trace 16 exposed by the third transfer section 14 is closer to a right angle.

[0086] Third embodiment: Refined design of the mask pattern that requires exposure of fine lines.

[0087] Please see Figures 11-16 , Figure 11 This is a first comparative example of the photomask provided in this application and an image of the circuit traces formed by exposing it; Figure 12 This is a second comparative example of the photomask provided in this application and an image of the circuit traces formed by exposing it; Figure 13 This is a partial schematic diagram of the first structure of the fourth transfer unit provided in the third embodiment of this application; Figure 14 This is a schematic diagram of the second structure of the fourth transfer unit provided in the third embodiment of this application; Figure 15 yes Figure 14 An enlarged structural diagram of part C in the diagram; Figure 16 This is a comparison diagram of the light intensity distribution of a comparative photomask and the photomask of this application during the exposure process; wherein, the left side is the light intensity distribution diagram corresponding to the photomask of this application, and the right side is the light intensity distribution diagram corresponding to the comparative photomask.

[0088] When the trace width of circuit trace 16 needs to be less than 3 micrometers, such as Figure 11 As shown, pattern 30a, with a size smaller than 1.5 micrometers, disappears after exposure using a standard photomask. Figure 11 (The location indicated by D in the middle). Another type, such as... Figure 12 As shown, when the linewidth of circuit trace 16 is 2 micrometers, a dent 30b appears on the trace after exposure using a standard photomask. This necessitates a more refined design for the finer lines.

[0089] In this embodiment, the mask 100 structure may further include a fourth transfer portion 17; along the width direction W2 of the fourth transfer portion 17, such as Figure 13As shown, the first side 171 of the fourth transfer portion 17 has a plurality of third protrusions 173, and the bottoms of adjacent third protrusions 173 are connected to each other. This can also be understood as multiple third protrusions 173 being continuously arranged on the first side 171. The width of the fourth transfer portion 17 is less than or equal to 3 micrometers, and the distance Z between the tops of two adjacent third protrusions 173 is 0.5 to 1.5 times the width of the fourth transfer portion 17, preferably 0.7 to 1.2 times. For example, when the width of the fourth transfer portion 17 is 2 micrometers, the distance between the tops of two adjacent third protrusions 173 can be 1 to 3 micrometers.

[0090] In a further embodiment, such as Figures 14-15 As shown, along the width direction W2 of the fourth transfer section 17, the second side 172 of the fourth transfer section 17 has a plurality of fourth protrusions 174, wherein the second side 172 is arranged opposite to the first side 171, and the plurality of fourth protrusions 174 are symmetrically arranged with a plurality of third protrusions 173. That is, in the width direction W2 of the fourth transfer section 17, the fourth protrusions 174 and the third protrusions 173 are arranged opposite to each other and symmetrically, presenting a pairwise arrangement. By setting a plurality of third protrusions 173, during the exposure process, through the diffraction of light, the circuit traces 16 formed by the fourth transfer section 17 are made closer in shape and size to the design pattern of the circuit traces 16, improving the fabrication accuracy of the circuit traces 16, thereby improving the circuit conduction efficiency, greatly reducing the occurrence of circuit trace breakage, and improving the display effect.

[0091] Among them, such as Figure 15 As shown, the distance Y between the tops of the symmetrically arranged third protrusion 173 and fourth protrusion 174 is 1.2 to 1.6 times the width X of the fourth transfer portion 17, preferably 1.2 to 1.4 times. For example, the protrusion height of each third protrusion 173 and fourth protrusion 174 relative to the fourth transfer portion 17 is 0.3 to 0.9 micrometers.

[0092] The third protrusion 173 and the fourth protrusion 174 can be rectangular, arc-shaped, trapezoidal, or triangular, etc., and this application does not specifically limit them. In a specific embodiment, such as Figure 15 As shown, the third protrusion 173 and the fourth protrusion 174 can be serrated. Furthermore, both the third protrusion 173 and the fourth protrusion 174 are isosceles triangles with a base angle α of 45°. This causes the light in the exposure process to diffract around the triangle, improving the accuracy of the formed circuit trace 16.

[0093] like Figure 16 The images shown are comparisons of light intensity distribution, with the first light intensity... Figure 17 a is a light intensity image from the structural exposure process of the fourth transfer section 17 in this application, and the second light intensity image is... Figure 17Image b shows the light intensity during the exposure process of the transfer section, which clearly shows that the fine lines of this application have a higher light intensity, resulting in more precise exposed circuit traces.

[0094] In addition, such as Figure 15 As shown, the end 175 of the fourth transfer section 17 can also be an isosceles triangle with a base angle β of 45°. This ensures that during the exposure process, the 45° angle between the isosceles triangle of the third protrusion 173 and the fourth protrusion 174 and the 45° angle of the end 175 of the fourth transfer section 17 form a straight line, avoiding the formation of a gap at the end 175 of the fourth transfer section 17. This prevents the circuit trace 16 formed by the fourth transfer section 17 from being recessed at the end 175, making the circuit trace 16 at the end 175 closer to the design pattern.

[0095] To address the aforementioned problems, this application also provides a method for manufacturing circuit traces.

[0096] Please see Figures 17-18 , Figure 17 This is a flowchart of a method for manufacturing circuit traces according to an embodiment of this application; Figure 18 This is a process flow diagram of a method for manufacturing circuit traces provided in an embodiment of this application.

[0097] The method for manufacturing circuit trace 16 may include the following steps:

[0098] S1: A substrate 41 is provided, the surface of which is covered with a conductive layer 42.

[0099] Specifically, the substrate 41 (not shown) can serve as a substrate for the circuit board, such as glass or plastic. A conductive layer 42 (not shown) can be deposited on one surface of the substrate 41 through a deposition process. The conductive layer 42 is specifically a metal layer, such as formed by copper or other metals.

[0100] S2: A photoresist layer 43 is applied to the surface of the conductive layer 42 away from the substrate 41.

[0101] Specifically, a photoresist layer 43 is formed by coating and covering the surface of the conductive layer 42 away from the substrate 41.

[0102] S3: The photoresist layer 43 is exposed using a photomask 100 as described above to form a patterned photoresist layer 43.

[0103] Specifically, the aforementioned mask 100 is placed on the side of the photoresist layer 43 away from the conductive layer 42, and the photoresist layer 43 is exposed by an ultraviolet lamp or the like, thereby transferring the pattern on the mask 100 to the photoresist layer 43 to form a patterned photoresist layer 43.

[0104] S4: Using the patterned photoresist layer 43 as a mask, the conductive layer 42 is etched so that the conductive layer 42 forms a pattern corresponding to the transfer portion.

[0105] Specifically, using a patterned photoresist layer 43 as a mask, the conductive layer 42 is etched by an etching solution, so that the conductive layer 42 forms a pattern corresponding to the transfer section. That is, the circuit trace 16 pattern formed by the light-shielding section 10 of the mask 100 corresponds to the pattern of the transfer section. The isolation section 13 designed during the exposure and etching process is only to assist in forming a more accurate circuit trace 16 that is closer to the design pattern, and will not be formed in the final circuit trace 16 pattern.

[0106] S5: Remove the photoresist layer 43.

[0107] Specifically, the photoresist layer 43 can be peeled off.

[0108] By using the aforementioned mask 100 to fabricate the circuit traces 16, the fabrication precision of the circuit traces 16 is improved. This solves the problems of easy breakage caused by the concavity of the existing circuit traces 16 and short circuits caused by incomplete exposure of the circuit traces 16. It improves the conductivity efficiency of the circuit, enhances the display effect, achieves the exposure effect of a high-specification mask, and does not increase the fabrication cost, thereby enhancing product competitiveness.

[0109] The mask structure disclosed in this application may include a light-shielding portion and a light-transmitting portion. The light-shielding portion includes: an adjacent and spaced-apart first transfer portion and a second transfer portion, and an isolation portion. The first transfer portion and the second transfer portion are respectively used to form different circuit traces, wherein the distance between the first transfer portion and the second transfer portion is less than or equal to 3 micrometers. The isolation portion is disposed between the first transfer portion and the second transfer portion and is disposed along the length direction of the first transfer portion and the second transfer portion. Both the first transfer portion and the second transfer portion are spaced apart from the isolation portion. The width of the isolation portion is 0.5 micrometers to 1 micrometer. This application sets an isolation portion between two spaced-apart transfer portions, thereby making the light intensity distribution more concentrated in the exposure process, resulting in better exposure effect and avoiding short circuits caused by the close proximity of adjacent circuit traces. The mask pattern of the circuit traces is finely designed, so that the circuit traces exposed by ordinary masks can be comparable to the effect of high-specification masks, thereby effectively improving the yield of Micro-LED driving circuit matrix and optimizing display quality, without increasing product cost, thus greatly enhancing product competitiveness.

[0110] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A mask structure, characterized in that, The light shielding part and the light transmitting part, the light shielding part comprising: adjacent and spaced first transfer part and second transfer part, the first transfer part and the second transfer part are used to form different circuit traces respectively; The distance between the first transfer part and the second transfer part is less than or equal to 3 microns; The isolation part is arranged between the first transfer part and the second transfer part, and is arranged along the length direction of the first transfer part and the second transfer part; The first transfer part and the second transfer part are spaced apart from the isolation part; The width of the isolation part is 0.5 microns to 1 micron; The isolation part comprises: The body part; A plurality of spaced first protrusions on one edge of the body part close to the first transfer part, and a plurality of spaced second protrusions on the other edge of the body part close to the second transfer part; wherein when the isolation part has the first protrusions and the second protrusions, the first protrusions and the second protrusions are arranged in a staggered manner in the width direction of the first transfer part and the second transfer part, or the first protrusions and the second protrusions are arranged in an alternating and partially overlapping manner in the width direction of the first transfer part and the second transfer part.

2. The mask structure of claim 1, wherein, The first gap is formed between the first transfer part and the isolation part, and the second gap is formed between the second transfer part and the isolation part, and the first gap and the second gap have the same width.

3. The mask structure of claim 1, wherein, The edge of the isolation part close to the first transfer part has a plurality of spaced first notches; And / or the other edge of the isolation part close to the second transfer part has a plurality of spaced second notches.

4. The mask structure of claim 3, wherein, The edge of the isolation part close to the first transfer part has a plurality of spaced first notches; The other edge of the isolation part close to the second transfer part has a plurality of spaced second notches; Wherein, the first notch and the second notch are arranged in a completely staggered manner in the width direction of the first transfer part and the second transfer part; Or, the first notch and the second notch are arranged in a partially overlapping manner in the width direction of the first transfer part and the second transfer part.

5. The mask structure of claim 1, wherein, Further comprising: The third transfer part comprises: the first extension part and the second extension part arranged in a cross manner, and the first extension part and the second extension part have an opening at the connection, and the opening is located on the reverse extension line of the angle bisector of the internal angle formed by the first extension part and the second extension part; The width of the first extension part in the first direction is the first width, and the width of the second extension part in the second direction is the second width; The width of the opening in the first direction is 1 / 20 to 1 / 10 of the first width; The width of the opening in the second direction is 1 / 20 to 1 / 10 of the second width.

6. The mask structure of claim 5, wherein, Further comprising: The fourth transfer part; Along the width direction of the fourth transfer part, the first edge of the fourth transfer part has a plurality of third protrusions, and the bottoms of adjacent third protrusions are connected to each other; The fourth transfer part has a width less than or equal to 3 microns, and the distance between the top ends of the two adjacent third protrusions is 0.5-1.5 times the width of the fourth transfer part.

7. The mask structure of claim 6, wherein, The fourth transfer part has a plurality of fourth protrusions on a second edge thereof along the width direction of the fourth transfer part, wherein the second edge is opposite to the first edge, and the plurality of fourth protrusions are symmetrically arranged with the plurality of third protrusions. The distance between the top ends of the symmetrically arranged third protrusions and fourth protrusions is 1.2-1.6 times the width of the fourth transfer part.

8. A mask structure, characterized in that, The light shielding part includes a first transfer part and a second transfer part arranged adjacent to and spaced from each other, and the first transfer part and the second transfer part are respectively used to form different circuit traces. The distance between the first transfer part and the second transfer part is less than or equal to 3 microns. An isolation part is arranged between the first transfer part and the second transfer part and along the length direction of the first transfer part and the second transfer part. The first transfer part and the second transfer part are arranged spaced from the isolation part. The width of the isolation part is 0.5-1 microns. The isolation part includes a plurality of first sub-isolation parts and a plurality of second sub-isolation parts arranged spaced from each other, and the first sub-isolation parts and the second sub-isolation parts are mirror images of each other, and in the width direction of the first transfer part and the second transfer part, the edge of the first sub-isolation part close to the second sub-isolation part only partially overlaps with the edge of the second sub-isolation part close to the first sub-isolation part.

9. A method of manufacturing a circuit trace, characterized by: The method comprises: providing a substrate, and a surface of the substrate is covered with a conductive layer; covering a photoresist layer on the surface of the conductive layer away from the substrate; exposing the photoresist layer to light using the mask structure according to any one of claims 1-8 to form a patterned photoresist layer; using the patterned photoresist layer as a mask to etch the conductive layer, so that the conductive layer forms a pattern corresponding to the transfer part; and removing the photoresist layer.

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