Reaction chamber and semiconductor workpiece processing method

Abstract

The invention provides a reaction chamber and a semiconductor workpiece processing method, and relates to the field of semiconductor manufacturing. The reaction chamber comprises: a chamber substrate having a first sub-chamber and a second sub-chamber; first process gas entering the first sub-chamber from the first gas inlet device can flow to the first surface of the semiconductor workpiece; the second gas inlet device is connected with the cavity base body, so that second process gas entering from the second gas inlet device can flow to the edge of the semiconductor workpiece, gas can be supplemented to the area, close to the edge, of the first surface of the semiconductor workpiece, and the first process gas is prevented from flowing to the second surface of the semiconductor workpiece; and the third gas inlet device is connected with the gas inlet side of the second sub-chamber, so that third process gas entering the second sub-chamber from the third gas inlet device can flow to the second surface of the semiconductor workpiece.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure generally relate to the field of semiconductor manufacturing, and more particularly to a reaction chamber and a method for processing a semiconductor workpiece. Background Art

[0002] In semiconductor technology, wafer heat treatment is an important step. Wafer heat treatment is to heat the wafer placed in the chamber to a preset temperature and introduce process gas into the chamber to cause a chemical reaction in the wafer. How to improve the effect of wafer heat treatment is one of the research topics. Summary of the invention

[0003] The purpose of the present disclosure is to provide a reaction chamber and a semiconductor workpiece processing method, which can ensure the processing effect of the semiconductor workpiece.

[0004] In a first aspect, the present disclosure provides a reaction chamber, comprising: a chamber base having a receiving space for receiving a semiconductor workpiece; wherein the chamber base has a first sub-chamber and a second sub-chamber, the first surface of the semiconductor workpiece is located in the first sub-chamber, and the second surface of the semiconductor workpiece is located in the second sub-chamber; the second surface is arranged opposite to the first surface, and the second surface is located below the first surface; a first air inlet device is connected to the air inlet side of the first sub-chamber, so that a first process gas entering the first sub-chamber from the first air inlet device can flow to a first area of ​​the first surface of the semiconductor workpiece; a second air inlet device is connected to the chamber base, so that a second process gas entering from the second air inlet device can flow to an edge of the semiconductor workpiece, so as to replenish gas to an area of ​​the first surface of the semiconductor workpiece close to the edge and prevent the first process gas from flowing to the second surface of the semiconductor workpiece; a third air inlet device is connected to the air inlet side of the second sub-chamber, so that a third process gas entering the second sub-chamber from the third air inlet device can flow to the second surface of the semiconductor workpiece.

[0005] In some embodiments, the second air inlet device is connected to the air inlet side of the first sub-chamber.

[0006] In some embodiments, the second air intake device includes: a second air intake pipeline having a second air intake port and a second air outlet port; the second air outlet port is not higher than the first air outlet port of the first air intake device.

[0007] In some embodiments, the air outlet direction of the second air inlet device is arranged perpendicular to the air outlet direction of the first air inlet device.

[0008] In some embodiments, the second air inlet port of the second air inlet device is disposed near an edge of the air inlet side of the first sub-chamber.

[0009] In some embodiments, the first air inlet device includes a first air inlet pipeline, the first air inlet pipeline has a first air inlet port, an expansion portion and a first air outlet port, the expansion portion is connected between the first air inlet port and the first air outlet port; the first air inlet port is used to communicate with a first gas source; the expansion portion is located in the first sub-chamber; along the direction away from the first air inlet port, the expansion portion gradually expands along the radial direction of the semiconductor workpiece.

[0010] In some embodiments, the first inlet port is disposed corresponding to a middle portion of an inlet side of the first sub-chamber.

[0011] In some embodiments, the first air inlet device further includes: a first diffuser plate, the first diffuser plate is located on a side of the first surface of the semiconductor workpiece away from the second surface, and the first diffuser plate is used to diffuse the first process gas flowing out of the first outlet port.

[0012] In some embodiments, the first gas outlet port is arc-shaped; the curvature of the first gas outlet port and the first diffusion plate matches the curvature of the semiconductor workpiece.

[0013] In some embodiments, the third gas inlet device includes: a third gas inlet member and a third diffusion plate, and the third diffusion plate is used to diffuse the third process gas flowing out of the third gas inlet member.

[0014] In some embodiments, the reaction chamber further includes: a first gas chamber enclosure plate, arranged corresponding to the periphery of the semiconductor workpiece, for guiding the first process gas flowing out of the first gas outlet port of the first gas inlet device to the first surface of the semiconductor workpiece.

[0015] In some embodiments, the air inlet side of the first sub-chamber and the air inlet side of the second sub-chamber correspond to the same side of the chamber base.

[0016] In a second aspect, the present disclosure provides a semiconductor workpiece processing method based on any of the above reaction chambers, comprising:

[0017] supplying gas to a first gas inlet device; wherein the first process gas entering the first sub-chamber from the first gas inlet device can flow to the first surface of the semiconductor workpiece to process the first surface of the semiconductor workpiece;

[0018] Supplying gas to a second gas inlet device; wherein the second process gas entering from the second gas inlet device can replenish gas to the area near the edge of the first surface of the semiconductor workpiece and prevent the first process gas from flowing to the second surface of the semiconductor workpiece; the second surface is arranged opposite to the first surface, and the second surface is located below the first surface;

[0019] A gas is supplied to the third gas inlet device; wherein the third process gas entering the second sub-chamber from the third gas inlet device can flow to the second surface of the semiconductor workpiece.

[0020] It should be understood that the contents described in the summary of the invention are not intended to limit the key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein:

[0022] Figure 1 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present disclosure;

[0023] Figure 2 is a structural schematic diagram of a first air intake pipeline provided by an embodiment of the present disclosure;

[0024] Figure 3 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present disclosure;

[0025] Figure 4 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present disclosure;

[0026] Figure 5 is a structural schematic diagram of a second air intake pipeline provided by an embodiment of the present disclosure;

[0027] Figure 6 is a schematic flow chart of a semiconductor workpiece processing method provided by an embodiment of the present disclosure;

[0028] Figure 7 is a schematic diagram of a partial structure of a reaction chamber provided in one embodiment of the present disclosure;

[0029] Figure 8 is a cross-sectional schematic diagram of a side air intake plate provided by an embodiment of the present disclosure;

[0030] Fig. 9 is a schematic structural diagram of a side air intake plate provided by another embodiment of the present disclosure;

[0031] Fig.10 is a schematic structural diagram of a reaction chamber provided in one embodiment of the present disclosure;

[0032] Fig.11 is a schematic structural diagram of an inner chamber enclosure provided by an embodiment of the present disclosure;

[0033] Fig.12 Schematic diagram of a cross-section of a reaction chamber provided in accordance with an embodiment of the present disclosure.

[0034] Description of reference numerals:

[0035] 100-chamber base; 100a-inlet side; 100b-outlet side; 100c-accommodation space; 100d-first sub-chamber; 100e-second sub-chamber; 100f-middle side; 101-bottom plate; 110-support device; 120-inner chamber enclosure; 121-first enclosure portion; 122-enclosure wall; 200-first air inlet device; 210-first air inlet pipeline; 211-first air inlet port; 212-expansion portion; 2121-transition section; 2122-expansion section; 213-first outlet port; 214-first guide portion; 220-first diffuser plate; 220a-central area; 220b-edge area; 221-first diffusion hole; 230-top air intake enclosure; 231-top enclosure opening; 300-floating device; 400-semiconductor workpiece; 500-second air intake device; 510-second air intake pipeline; 511-second air intake port; 512-second guide portion; 512a-first connecting section; 512b-first bending section; 512c-second connecting section; 512d-second bending section; 512e-expansion section; 513-second air outlet port; 600-third air intake device; 610-side air intake plate; 611-air intake section; 612-air outlet section; 612a-air outlet hole; 613-uniform pressure chamber; 620-side diffusion plate. DETAILED DESCRIPTION

[0036] The following is a description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be recognized by those of ordinary skill in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0037] Figure 1 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present disclosure; Figure 2 is a structural schematic diagram of a first air intake pipeline provided by an embodiment of the present disclosure; Figure 3 Schematic diagram of the structure of the reaction chamber provided by the embodiment of the present disclosure. Figure 1Specifically, it is a schematic diagram of a portion of the reaction chamber after the reaction chamber is cut through a section plane parallel to the vertical direction and passing through the central axis of the first air inlet pipeline; Figure 2 is a schematic diagram of the three-dimensional structure of the first air intake pipeline; Figure 3 It is a top view after hiding the components located above the first diffusion plate in the reaction chamber.

[0038] Please refer to Figures 1 to 3 , this embodiment provides a reaction chamber, including: a chamber base 100, a first air inlet device 200, a second air inlet device 500 and a third air inlet device 600. The first air inlet device 200, the second air inlet device 500 and the third air inlet device 600 are respectively connected to the chamber base 100, and are used to transport process gases to the chamber base 100. In addition, the reaction chamber may also include a supporting device 110 and a heating device, the supporting device 110 is used to support the semiconductor workpiece 400, and the supporting device 110 may include at least one of the following: a quartz tray and a thimble; the heating device is used to heat the semiconductor workpiece 400; the heating device may have two parts, respectively heating the first surface and the second surface of the semiconductor workpiece 400. In other examples, the heating device may also have one, and the heating device may be located above or below the semiconductor workpiece 400, and may be specifically adjusted according to process requirements.

[0039] The chamber base 100 may be a columnar structure. For example, the chamber base 100 may be cylindrical or prism-shaped. The hollow portion of the chamber base 100 forms a receiving space 100c, which is used to receive the semiconductor workpiece 400. At least part of the heating device may also be located in the receiving space 100c.

[0040] For ease of description, the following will take the axial direction of the chamber base 100 (i.e., the thickness direction of the semiconductor workpiece 400) as the vertical direction, the gravity direction as the downward direction, the first surface of the semiconductor workpiece 400 being located above the second surface, the direction from the air inlet side 100a toward the air outlet side 100b as the longitudinal direction, the direction perpendicular to the longitudinal and vertical directions as the transverse direction, and the direction toward the central axis of the chamber base 100 as the inward direction as an example for explanation.

[0041] The chamber base 100 has a first sub-chamber 100d and a second sub-chamber 100e, wherein the first sub-chamber 100d is located above the second sub-chamber 100e. The first surface (i.e., the upper surface) of the semiconductor workpiece 400 is located in the first sub-chamber 100d, and the second surface (i.e., the lower surface) of the semiconductor workpiece 400 is located in the second sub-chamber 100e.

[0042] The chamber base 100 can be divided into a first sub-chamber 100d and a second sub-chamber 100e by using the semiconductor workpiece 400 itself, and the first surface of the semiconductor workpiece 400 is located in the first sub-chamber 100d, and the second surface of the semiconductor workpiece 400 is located in the second sub-chamber 100e.

[0043] The first sub-chamber 100d has an inlet side 100a (i.e., the inlet side 100a of the chamber base 100). The first sub-chamber 100d also has an outlet side 100b (i.e., the outlet side 100b of the chamber base 100), and the outlet side 100b is located on the opposite side of the inlet side 100a to facilitate the flow of process gas and form a stable gas flow field. The semiconductor workpiece 400 is located in the stable gas flow field, which can improve the replacement efficiency of the process gas involved in the heat treatment on the semiconductor workpiece 400.

[0044] The first gas inlet device 200 is connected to a portion of the first sub-chamber 100d located at the gas inlet side 100a, so that the first process gas entering the first sub-chamber 100d from the first gas inlet device 200 can flow to the first area of ​​the first surface of the semiconductor workpiece 400. Alternatively, the first gas inlet device 200 is connected to the connection between the first sub-chamber 100d and the second sub-chamber 100e.

[0045] The first air inlet device 200 includes a first air inlet pipeline 210. The first air inlet pipeline 210 has a first air inlet port 211, an expansion portion 212 and a first air outlet port 213, and the expansion portion 212 is connected between the first air inlet port 211 and the first air outlet port 213. The first air inlet port 211, the expansion portion 212 and the first air outlet port 213 can be integrally provided by an integral molding process. The first air inlet port 211 is used to communicate with a first gas source, and the first gas source is used to provide a first process gas.

[0046] The first air inlet port 211 corresponds to the middle of the air inlet side 100a of the first sub-chamber 100d. Specifically, the first air inlet port 211 is arranged corresponding to the middle of the air inlet side 100a in the horizontal direction, for example, the center plane of the chamber base 100 parallel to the longitudinal direction can pass through the first air inlet port 211. In other examples, the first air inlet port 211 can also be arranged away from the middle of the air inlet side 100a in the horizontal direction; for example, there is a preset distance between the first air inlet port 211 and the center plane of the chamber base 100 parallel to the longitudinal direction, or the first air inlet port 211 is arranged close to the edge of the chamber base 100. It can be understood that the specific setting position of the first air inlet port 211 can be set according to actual needs.

[0047] Exemplarily, a side wall of the chamber base 100 corresponding to the air inlet side 100a is provided with a pipeline through hole, and a portion of the first air inlet pipeline 210 close to the first air inlet port 211 can be passed through the pipeline through hole. A center plane parallel to the longitudinal direction of the chamber base 100 can pass through the pipeline through hole. Optionally, the central axis of the pipeline through hole intersects and is perpendicular to the center plane parallel to the longitudinal direction of the chamber base 100.

[0048] In order to simplify the structure of the first air inlet pipeline 210, the first air inlet port 211 can also be arranged close to the first surface of the semiconductor workpiece 400 in the vertical direction, so that the height difference between the first air inlet port 211 and the first surface of the semiconductor workpiece 400 in the vertical direction can be relatively small. Of course, the height difference between the first air inlet port 211 and the first surface of the semiconductor workpiece 400 in the vertical direction can be set according to actual needs; for example, in order to avoid other components, the first air inlet port 211 can also be located above the first surface of the semiconductor workpiece 400, and there is a preset height difference between the first air inlet port 211 and the first surface of the semiconductor workpiece 400.

[0049] The expansion portion 212 is located in the first sub-chamber 100d. In the direction away from the first air inlet port 211, the expansion portion 212 gradually expands in the radial direction of the semiconductor workpiece 400. Exemplarily, the first air inlet pipeline 210 can be a symmetrical component; in the horizontal direction, in the direction away from the first air inlet port 211, the distance between the edge of the expansion section 2122 in the expansion portion 212 and the symmetry center line (or called the central axis) of the first air inlet pipeline 210 increases and decreases.

[0050] A first gas outlet port 213 is disposed at one end of the expansion portion 212 away from the first gas inlet port 211. Optionally, the first gas outlet port 213 may be arc-shaped to improve the uniformity of the first process gas flowing to the first surface of the semiconductor workpiece 400.

[0051] In this example, the above configuration is helpful to increase the coverage area of ​​the first process gas flowing out of the first gas outlet port 213 , so that the first process gas can fully contact the first surface of the semiconductor workpiece 400 , thereby improving the utilization rate of the first process gas.

[0052] Optionally, the first air inlet pipeline 210 further includes a first guide portion 214, which is connected between the first air inlet port 211 and the expansion portion 212; and the height of the first guide portion 214 is lower than that of the expansion portion 212, that is, the upper surface of the first guide portion 214 is lower than that of the expansion portion 212. The expansion portion 212 may include a transition section 2121 and an expansion section 2122, wherein the transition section 2121 is connected between the first guide portion 214 and the expansion section 2122, wherein the upper surface of the first guide portion 214 may be flush with the lower surface of the transition section 2121, the lower surface of the transition section 2121 may be lower than the lower surface of the expansion section 2122, and the upper surface of the transition section 2121 may be flush with the upper surface of the expansion section 2122. Through the above arrangement, the difficulty of installing the first air inlet pipeline 210 can be reduced, and the first process gas flowing out of the first air outlet port 213 is facilitated to flow to the first surface of the semiconductor workpiece 400.

[0053] Along the longitudinal direction of the chamber base 100 , the distance between the first gas outlet port 213 and the semiconductor workpiece 400 is in the range of 1 mm to 5 mm.

[0054] In other examples, the first gas outlet port 213 may also be straight, and the first gas outlet port 213 extends in the lateral direction of the chamber base 100 . The first process gas flowing out of the first gas outlet port 213 can flow toward the first surface of the semiconductor workpiece 400 .

[0055] In other embodiments, the first air inlet pipeline 210 may also be columnar, and the first process gas flowing out of the first air inlet pipeline 210 is evenly diffused by the first diffusion plate 220 and then flows toward the first surface of the semiconductor workpiece 400. Among them, at least a portion of the first air inlet pipeline 210 may be bent and arranged according to actual needs, and may be specifically arranged according to actual needs.

[0056] The reaction chamber also includes a second gas inlet device 500, which can be connected to the chamber base 100, so that the second process gas entering the first sub-chamber 100d from the second gas inlet device 500 can flow to the edge of the semiconductor workpiece 400 to replenish gas in the area near the edge of the first surface of the semiconductor workpiece 400 and prevent the first process gas in the first sub-chamber 100d from flowing downward to the second surface of the semiconductor workpiece 400.

[0057] In other words, the gas entering the first sub-chamber 100d from the second gas inlet device 500 can replenish the first process gas to the area near the edge of the first surface of the semiconductor workpiece 400 and prevent the gas in the first sub-chamber 100d from flowing into the second sub-chamber 100e.

[0058] The connection position between the second air inlet device 500 and the chamber base 100 can be set according to actual needs. For example, the second air inlet device 500 can be connected to the air inlet side 100a of the first sub-chamber 100d. For another example, the second air inlet device 500 can be connected to the connection between the first sub-chamber 100d and the second sub-chamber 100e.

[0059] The specific composition of the second process gas can be set according to actual needs. For example, the second process gas can be a mixed gas, so that the second process gas can react chemically with the area near the edge of the first surface of the semiconductor workpiece 400 to ensure the treatment effect on the first surface of the semiconductor workpiece 400, and the second process gas can prevent the first process gas from flowing downward to the second surface of the semiconductor workpiece 400 to ensure that the second surface of the semiconductor workpiece 400 does not react chemically.

[0060] like Figure 4 As shown, the second gas inlet device 500 has a second gas inlet port 511 and a second gas outlet port 513, and the second gas inlet port 511 is connected to a second gas source providing a second process gas. Exemplarily, in the vertical direction, the second gas inlet port 511 can be arranged flush with the first gas inlet port 211, or the second gas inlet port 511 can be arranged lower than the first gas inlet port 211, or the second gas inlet port 511 can also be arranged higher than the first gas inlet port 211.

[0061] In the vertical direction, the second outlet port 513 of the second air inlet device 500 may be disposed close to the edge of the first surface of the semiconductor workpiece 400. For example, the second outlet port 513 of the second air inlet device 500 may correspond to the first surface of the semiconductor workpiece 400; or, the second outlet port 513 of the second air inlet device 500 may correspond to the side of the semiconductor workpiece 400, and the side of the semiconductor workpiece 400 is connected between the first surface and the second surface. In the lateral direction, the second air inlet device 500 may be disposed close to the middle of the air inlet side 100a, or close to the edge of the air inlet side 100a.

[0062] It can be understood that the specific locations of the second air inlet port 511 and the second air outlet port 513 of the second air inlet device 500 can be set according to actual needs as long as the above functions can be achieved.

[0063] The gas outlet side 100 b of the chamber base 100 is provided with an exhaust channel, through which the first process gas and the second process gas leaving the semiconductor workpiece 400 can be exhausted.

[0064] Optionally, the reaction chamber may further include an air flotation device 300, which is used to control the air flotation height and / or rotation state of the semiconductor workpiece 400, for example, to control the semiconductor workpiece 400 to rise, or to control the semiconductor workpiece 400 to remain at a current height.

[0065] The flotation device 300 may include: a flotation pipeline and a flotation block, which are connected to each other. The flotation block is arranged corresponding to the second surface of the semiconductor workpiece 400, and the gas used to provide flotation force enters the flotation block through the flotation pipeline and flows from the flotation block to the second surface of the semiconductor workpiece 400.

[0066] In some scenarios, the gas flowing out of a part of the air flotation block acts on the second surface of the semiconductor workpiece 400 to adjust the suspension height of the semiconductor workpiece 400 or to keep the semiconductor workpiece 400 at the current height. The gas flowing out of another part of the air flotation block is used to control the rotation direction or rotation speed of the semiconductor workpiece 400; wherein, the gas flowing out of at least one air flotation block is used to cause the semiconductor workpiece 400 to rotate clockwise, and the gas flowing out of at least one air flotation block is used to cause the semiconductor workpiece 400 to rotate counterclockwise. By controlling the amount of gas flowing out of the above-mentioned air flotation block, the rotation direction or rotation speed can be adjusted.

[0067] In this example, the flotation device can be used to achieve flotation control of the semiconductor workpiece 400, which is beneficial to reducing the wear of the semiconductor workpiece 400 and overcoming the problem of uneven temperature of the semiconductor workpiece 400 caused by the existence of cold spots.

[0068] The reaction chamber further includes a third gas inlet device 600 . The third gas inlet device 600 is connected to the gas inlet side 100 a of the second sub-chamber 100 e so that the third process gas entering the second sub-chamber 100 e from the third gas inlet device 600 can flow to the second surface of the semiconductor workpiece 400 .

[0069] The air inlet side 100a of the second sub-chamber 100e and the air inlet side 100a of the first sub-chamber 100d may be located on the same side of the chamber base 100, for example, both are located on Figure 1 In other examples, the air inlet side 100a of the second sub-chamber 100e and the air inlet side 100a of the first sub-chamber 100d may also be on different sides. For example, the air inlet side 100a of the first sub-chamber 100d is located at Figure 1 The air inlet side 100a of the second sub-chamber 100e is located on the left side of Figure 1 Alternatively, the air inlet side 100a of the second sub-chamber 100e is located at the front side or the rear side, which can be specifically arranged according to actual needs.

[0070] Exemplarily, the third air inlet device 600 includes: a third air inlet member, the third air inlet member having the third air inlet port and the third air outlet port. The third air inlet member is connected to a third gas source, and the third gas source is used to provide a third process gas. The composition of the third process gas can be set according to actual needs. For example, the third process gas can include an inert gas. The third air inlet member has a third air inlet port, and the third air inlet port can be located below the second air inlet port or the first air inlet port, or the third air inlet port can be arranged flush with the second air inlet port or the first air inlet port, or the third air inlet port can be located above the second air inlet port or the first air inlet port, and can be specifically arranged according to actual needs.

[0071] The third gas inlet member also has a third gas outlet port, which can be located below the semiconductor workpiece 400, so that the third process gas flowing out of the third gas outlet port can flow to the second surface of the semiconductor workpiece 400 to prevent the first process gas from contacting the second surface of the semiconductor workpiece 400. In other examples, the third gas outlet port can also correspond to the side of the semiconductor workpiece 400. The specific position of the third gas outlet port can be set according to actual needs, as long as the function of the third gas inlet device 600 can be achieved.

[0072] In order to simplify the structure of the reaction chamber, the third air inlet member may include a side air inlet plate 610 with an air flow channel. Optionally, the side air inlet plate 610 may be plugged into the pipeline through hole, and the first air inlet pipeline 210 may be inserted into the side air inlet plate and the pipeline through hole. Fig. 9 As shown, the side air inlet plate 610 may include an air inlet portion 611 and an air outlet portion 612; the air inlet portion 611 is arranged near the outer side of the side air inlet plate 610 away from the central axis of the chamber base 100, and the air outlet portion 612 is arranged near the inner side of the side air inlet plate 610 toward the central axis of the chamber base 100. The air inlet portion 611 is provided with an air inlet hole, and the air outlet portion 612 is provided with an air outlet hole 612a, and the air inlet hole is connected to the air outlet hole 612a, and one end of the air inlet hole away from the central axis of the chamber base 100 forms a third air inlet port, and one end of the air outlet hole 612a toward the central axis of the chamber base 100 forms a third air outlet port. The air outlet portion 612 may be inserted into the pipeline through hole. The gas outlet 612 may be provided with a sealant to improve the sealing between the side gas inlet plate 610 and the chamber base 100 and prevent the process gas from leaking from the connection between the side gas inlet plate 610 and the chamber base 100 .

[0073] In one possible implementation, there may be a plurality of air outlet holes 612a, and at least some of the air outlet holes 612a are distributed in the transverse direction. For example, the air outlet holes 612a are distributed in a row and are evenly distributed in the transverse direction. For another example, the air outlet holes 612a are distributed in multiple rows, and each row has multiple air outlet holes 612a evenly distributed in the transverse direction.

[0074] like Figure 8 As shown, the side air inlet plate 610 further includes: a pressure-equalizing chamber 613, which is connected between the air inlet portion 611 and the air outlet portion 612. The pressure-equalizing chamber 613 can be used to temporarily store process gas, and the process gas is discharged from the air outlet after the pressure-equalizing chamber 613 is almost full. The gas flow rate can be controlled by setting the pressure-equalizing chamber 613, for example, the gas flow rate can be reduced so that the gas is discharged from the air outlet 612a at a lower and more stable flow rate.

[0075] In another possible implementation, when the number of the gas outlet holes 612a is small, for example, there may be one gas outlet hole 612a; at this time, the third gas inlet device 600 further includes: a side diffusion plate 620 for diffusing the third process gas flowing out of the gas outlet hole 612a.

[0076] In other possible implementations, the air inlet or outlet 612a may include an inclined section and a second section, and the inclined section is connected to one end of the second section near the air inlet side. For ease of description, the following will be described by taking the air inlet provided with an inclined section as an example. There is a first angle between the central axis of the inclined section and the horizontal plane, so that in the process of the process gas flowing from the inclined section to the second section, the process gas will hit the connection between the inclined section and the second section, thereby improving the diffusion effect of the process gas. Among them, the central axis of the second section is parallel to the horizontal direction. The first angle refers to the amount of rotation when the central axis of the inclined section rotates in a clockwise direction to be parallel to the central axis of the second section. The first angle can be an obtuse angle to reduce the energy lost by the process gas due to the collision with the connection between the inclined section and the second section to change the flow path. The first angle is greater than or equal to 150° and less than or equal to 165°. Of course, a structure similar to the above can also be used in the third diffusion hole of the side diffusion plate 620.

[0077] In other examples, the third air inlet member may include a third air inlet pipeline; in this case, the third air inlet pipeline and the first air inlet pipeline 210 may both be arranged in the pipeline through hole of the chamber base. Alternatively, in the vertical direction, the third air inlet pipeline may be located below the first air inlet pipeline 210. Alternatively,

[0078] In the transverse direction, the third air intake pipeline is staggered with the first air intake pipeline 210. It can be understood that the structure and specific shape of the third air intake pipeline can be set according to actual needs.

[0079] In some application scenarios, the first process gas flowing to the first surface of the semiconductor workpiece 400 is used to process the first surface of the semiconductor workpiece 400, for example, to cause a chemical reaction to occur on the first surface of the semiconductor workpiece 400. The third process gas flowing to the second surface of the semiconductor workpiece 400 is used to prevent the first process gas from contacting the second surface of the semiconductor workpiece 400.

[0080] In other application scenarios, when the second surface of the semiconductor workpiece 400 also needs to be processed by chemical reaction or the like, the third process gas may also chemically react with the second surface of the semiconductor workpiece 400 .

[0081] The third process gas leaving the semiconductor workpiece 400 can be discharged from the exhaust channel of the gas outlet side 100b of the chamber base 100. The first sub-chamber 100d and the second sub-chamber 100e are respectively provided with exhaust channels, so that the first process gas and the second process gas can be discharged from the exhaust channel of the first sub-chamber 100d, and the third process gas can be discharged from the exhaust channel of the second sub-chamber 100e. Alternatively, the exhaust channel can also be located at the connection between the first sub-chamber 100d and the second sub-chamber 100e, so that the first process gas, the second process gas and the third process gas can all be discharged from the exhaust channel.

[0082] The reaction chamber provided in this embodiment, by arranging the first air inlet device 200 corresponding to the middle part of the air inlet side 100a of the first sub-chamber 100d, is conducive to making the first process gas flowing out of the first air inlet device 200 flow evenly to the first surface of the semiconductor workpiece 400; by arranging the second air inlet device 500, the gas flowing out of the second air inlet device 500 can replenish the area close to the edge of the first surface of the semiconductor workpiece 400, and prevent the first process gas in the first sub-chamber 100d from flowing downward to the second surface of the semiconductor workpiece 400, thereby ensuring the processing effect on the semiconductor workpiece 400; by arranging the third air inlet device 600, it can effectively prevent the first process gas in the first sub-chamber 100d from flowing downward to the second sub-chamber 100e and contacting the second surface of the semiconductor workpiece 400, thereby ensuring the processing effect on the semiconductor workpiece 400.

[0083] Figure 4 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present disclosure; Figure 5 is a schematic diagram of the structure of the second air intake pipeline provided by the embodiment of the present disclosure. Specifically, Figure 4 is a top view after hiding the components located above the second air inlet pipeline in the reaction chamber; Figure 5 1 is a top view of the second air intake line.

[0084] Please refer to Figure 4 and Figure 5 , and continue to refer to Figure 1 and Figure 3 In some embodiments, the second gas inlet device 500 includes: a second gas inlet pipeline 510, having a second gas inlet port 511 and a second gas outlet port 513. The second gas outlet port 513 is located in the first sub-chamber 100d, so that the gas entering the first sub-chamber 100d from the second gas inlet device 500 can flow to the area near the edge of the first surface of the semiconductor workpiece 400, so that the first process gas can be supplemented to the area near the edge of the semiconductor workpiece 400, thereby improving the uniformity of the treatment effect on the first surface of the semiconductor workpiece 400, and preventing the first process gas in the first sub-chamber 100d from flowing downward to the second surface of the semiconductor workpiece 400, so as to ensure that no chemical reaction occurs on the second surface of the semiconductor workpiece 400.

[0085] The second air inlet port 511 may be connected to the air inlet side 100a of the first sub-chamber 100d. Exemplarily, a through hole is provided on the side wall of the first sub-chamber 100d located at the air inlet side 100a, and a portion of the second air inlet pipeline 510 close to the second air inlet port 511 is passed through the through hole, and a portion of the second air inlet pipeline 510 close to the second air inlet port 511 may be connected to the second gas source through a pipeline connector, so that the second process gas provided by the second gas source can enter the second air inlet pipeline 510 from the second air inlet port 511.

[0086] The relative position of the second air inlet port 511 and the first air inlet port 211 can be set according to actual needs. For example, in the vertical direction, the second air inlet port 511 can be set flush with the first air inlet port 211, or the second air inlet port 511 can be set slightly higher than the first air inlet port 211, or the second air inlet port 511 can be set slightly lower than the first air inlet port 211. In the horizontal direction, the second air inlet port 511 and the first air inlet port 211 can be staggered, for example, the first air inlet port 211 is set near the middle of the air inlet side 100a of the first sub-chamber 100d, and the second air inlet port 511 can be set near the edge of the air inlet side 100a of the first sub-chamber 100d, so as to reduce the impact of the second air inlet device 500 on other components; wherein, the spacing between the first air inlet port 211 and the second air inlet port 511 can be set according to the radius of the semiconductor workpiece 400.

[0087] In order to ensure that the second process gas flowing out of the second gas outlet port 513 can prevent the first process gas from flowing into the second sub-chamber 100e, the second gas outlet port 513 is not higher than the first gas outlet port 213 of the first gas inlet device 200. For example, the second gas outlet port 513 is flush with the first gas outlet port 213, or the second gas outlet port 513 is slightly lower than the first gas outlet port 213. In other examples, the second gas outlet port 513 may also be slightly higher than the first gas outlet port 213, and the gas flowing out of the second gas outlet port 513 may be guided by a flow guide member.

[0088] In some examples, the chamber base 100 has an upper portion and a lower portion relative to each other, and the chamber base 100 also has a side portion connected between the upper portion and the lower portion. The inlet side 100a and the outlet side 100b correspond to two of the opposite side portions, respectively. An intermediate side 100f is also connected between the inlet side 100a and the outlet side 100b, and the intermediate side 100f has two and is arranged oppositely. The second outlet port 513 is arranged corresponding to the middle part of the intermediate side 100f in the longitudinal direction, and the second process gas flowing out of the second outlet port 513 is used to flow to the area near the edge of the semiconductor workpiece 400. In this way, the second process gas discharged from the second outlet port 513 has substantially the same coverage area on the left and right sides of the semiconductor workpiece 400, that is, the coverage area on the opposite sides of the transverse center plane of the semiconductor workpiece 400 is substantially the same, which is conducive to improving the uniformity of the heat treatment of the semiconductor workpiece 400.

[0089] In some examples, the transverse center plane of the semiconductor workpiece 400 in the chamber base 100 passes through the second gas outlet port 513. Exemplarily, the transverse center plane of the quartz tray supporting the semiconductor workpiece 400, which is parallel to the transverse direction, passes through the second gas outlet port 513, which is conducive to making the transverse center plane of the semiconductor workpiece 400 placed on the tray pass through the second gas outlet port 513, thereby facilitating ensuring that the second process gas exhausted from the second gas outlet port 513 covers substantially the same area on the left and right sides of the semiconductor workpiece 400.

[0090] Optionally, the lateral center plane of the quartz tray coincides with the lateral center plane of the second gas outlet port 513, which helps to make the lateral center plane of the semiconductor workpiece 400 placed on the tray closer to the lateral center plane of the second gas outlet port 513, and even makes the lateral center plane of the semiconductor workpiece 400 coincide with the lateral center plane of the second gas outlet port 513.

[0091] Optionally, the second gas outlet port 513 is located above the semiconductor workpiece 400, and the second process gas flowing out of the second gas outlet port 513 is used to replenish gas in the area near the edge of the first surface of the semiconductor workpiece 400, so as to ensure the treatment effect on the first surface of the semiconductor workpiece 400. Among them, the specific composition of the second process gas can be the same as the composition of the first process gas, or the second process gas includes some components of the first process gas. The second air inlet pipeline 510 also includes: a second guide part 512. The second guide part 512 is connected between the second air inlet port 511 and the second air outlet port 513. The second guide part 512 is used to guide the second process gas to the area near the edge of the semiconductor workpiece 400 that needs to be replenished. The shape of the second guide part 512 can be set according to the positions of the second air inlet port 511, the second air outlet port 513 and other components in the chamber base 100.

[0092] In order to facilitate the arrangement of other components in the chamber base 100 and improve the compactness of the structure, the second guide portion 512 may be bent to avoid other components. Exemplarily, the second guide portion 512 includes: a first connecting section 512a, a first bending section 512b, a second connecting section 512c and a second bending section 512d.

[0093] The first connecting section 512a is connected to the second air inlet port 511. The first connecting section 512a extends from the air inlet side 100a toward the air outlet side 100b.

[0094] The end of the first connecting section 512a facing away from the second air inlet port 511 is connected to the first bending section 512b. The first bending section 512b can be bent relative to the first connecting section 512a in a direction away from the semiconductor workpiece 400, or in other words, the first bending section 512b can be bent relative to the first connecting section 512a in a direction away from the central axis of the chamber base 100 (outward); the end of the first bending section 512b facing away from the first connecting section 512a can be close to the inner wall of the middle side 100f of the chamber base 100, and the first bending section 512b can also be close to the inner wall of the air inlet side 100a of the chamber base 100, thereby providing space for arranging other components in the chamber base 100.

[0095] The first bending section 512b is connected to the second connecting section 512c at one end away from the first connecting section 512a, and the second connecting section 512c extends from the air inlet side 100a to the air outlet side 100b, that is, the second connecting section 512c extends in the longitudinal direction. The second connecting section 512c can extend to a transverse center plane close to the semiconductor workpiece 400 (or the tray).

[0096] The second connecting section 512c may be connected to an end away from the first bending section 512b with a second bending section 512d, and the second bending section 512d is bent relative to the second connecting section 512c in a direction toward the semiconductor workpiece 400. The second bending section 512d extends in a lateral direction. In the horizontal direction, the second gas outlet port 513 is arranged close to the edge of the semiconductor workpiece 400, so that the third process gas flowing out of the second gas outlet port 513 can flow more to the area close to the edge of the first surface of the semiconductor workpiece 400. The central axis of the second bending section 512d may intersect and be perpendicular to the central axis of the semiconductor workpiece 400, or there is a preset distance between the central axis of the second bending section 512d and the central axis of the semiconductor workpiece 400.

[0097] The first connecting section 512a is arranged in parallel with the second connecting section 512c, the second bending section 512d can be arranged in parallel with the first bending section 512b, and the second bending section 512d and the first bending section 512b can be arranged perpendicular to the second connecting section 512c. The adjacent two sections among the first connecting section 512a, the second connecting section 512c, the first bending section 512b and the second bending section 512d can be smoothly connected.

[0098] In some examples, the second air inlet line 510 has an expansion section 512e, the axial direction of the expansion section 512e is parallel to the lateral direction; the expansion section 512e gradually expands in the direction toward the semiconductor workpiece 400; the expansion section 512e is connected to the second air outlet port 513 on the side facing the semiconductor workpiece 400.

[0099] The expansion section 512e can be connected to the second bending section 512d. The expansion section 512e is generally flat. In the longitudinal direction, the expansion section 512e has two spaced edges; in the transverse direction and in the direction toward the semiconductor workpiece 400, the distance between the two edges of the expansion section 512e spaced in the longitudinal direction gradually increases, so that the third process gas flowing out of the second gas outlet port 513 can cover more areas of the first surface of the semiconductor workpiece 400.

[0100] The longitudinal dimension of the second gas outlet port 513 can be set according to actual needs. For example, in the longitudinal direction, the second gas outlet port 513 can have a preset width, and the ratio between the preset width and the radius of the semiconductor workpiece 400 can be 0.10 or 0.11 or 0.12 or 0.13 or 0.14 or 0.15 or a value between any two of the above.

[0101] Optionally, the second gas outlet port 513 may also be arc-shaped, and the curvature of the second gas outlet port 513 may be adapted to the curvature of the semiconductor workpiece 400. Alternatively, the second gas outlet port 513 may also be straight. The specific shape of the second gas outlet port 513 may be set according to actual needs.

[0102] It can be understood that the specific structure of the second guide portion 512 is not limited thereto, and the specific number of connecting sections and bending sections in the second guide portion 512 can be set according to actual needs. This embodiment is only used as an example.

[0103] Optionally, the air outlet direction of the second air inlet device 500 and the air outlet direction of the first air inlet device 200 may be arranged perpendicularly, that is, the angle between the air outlet direction of the second air inlet device 500 and the air outlet direction of the first air inlet device 200 is about 90°.

[0104] In some examples, the second gas inlet device 500 may also include a second diffuser plate, which is used to diffuse the second process gas flowing out of the second gas outlet port 513 , so as to improve the uniformity of the second process gas discharged from the second gas supply device 500 .

[0105] In some embodiments, the first air inlet device 200 also includes: a first diffuser plate 220, the first diffuser plate 220 is located on the side of the first surface of the semiconductor workpiece 400 away from the second surface, that is, the first diffuser plate 220 is located above the first surface of the semiconductor workpiece 400, and the first diffuser plate 220 is used to diffuse the first process gas flowing out of the first gas outlet port 213.

[0106] like Figure 7 As shown, illustratively, the first diffuser plate 220 may be a circular plate body, and the circular plate body may be provided with first diffuser holes 221 uniformly distributed in a dot matrix. In the vertical direction, the first diffuser plate 220 may be located between the first gas outlet port 213 and the first surface of the semiconductor workpiece 400. In this way, the first process gas flowing out of the first air inlet pipeline 210 is diffused and homogenized by the first diffuser plate 220, and then flows to the first surface of the semiconductor workpiece 400, which is conducive to improving the uniformity of the first process gas flowing to the first surface of the semiconductor workpiece 400. In which, in the vertical direction, the first diffuser plate 220 may be located above the second gas outlet port 513 of the second air inlet device 500.

[0107] In some examples, the plurality of first diffusion holes 221 on the first diffusion plate 220 may be first diffusion holes of the same size, for example, circular holes of 0.5-2 mm, to improve the uniformity of the first process gas reaching the semiconductor workpiece 400 .

[0108] Optionally, the first diffuser plate 220 has a central area 220a and an edge area 220b located in the central area. The arrangement of the first diffuser holes 221 located in the central area 220a and the first diffuser holes 221 located in the edge area 220b may be different. For example, the plurality of first diffuser holes 221 of the first diffuser plate 220 are distributed with different densities, wherein the first diffuser holes 221 located in the edge area 220b have a first density, and the first diffuser holes 221 located in the central area 220a have a second density, and the first density may be less than the second density. By providing the first diffuser holes 221 with different densities, the gas flow through different areas of the first diffuser plate 220 can be controlled.

[0109] The edge region 220b may correspond to the edge region of the semiconductor workpiece 400, and the center region 220a may correspond to the center region of the semiconductor workpiece 400, and the center region of the semiconductor workpiece 400 is located inside the edge region of the workpiece. The second density and the first density are respectively related to the amount of gas required for the center region and the edge region of the semiconductor workpiece 400. For example, if the amount of gas required for the center region of the semiconductor workpiece 400 is twice the amount of gas required for the edge region of the semiconductor workpiece 400, the ratio of the second density to the first density is adjusted to 2:1.

[0110] In some examples, the first diffusion holes 221 of the first diffusion plate 220 include a first group of diffusion holes and a second group of diffusion holes spaced apart, and the lines connecting some of the second group of diffusion holes form an inscribed hexagon of the first diffusion plate 220 (the dotted lines in the figure show the hexagon defined by the lines connecting the second group of diffusion holes), and the area surrounded by the inscribed hexagon defines the central area 220a. The first group of diffusion holes is located outside the central area 220a; the number of the second group of diffusion holes is greater than the number of the first group of diffusion holes.

[0111] Two adjacent first diffusion holes 221 in the first diffusion holes 221 in the edge area 220b of the first diffusion plate 220 have a first hole spacing, and two adjacent first diffusion holes 221 in the first diffusion holes 221 in the center area 220a of the first diffusion plate 220 have a second hole spacing, wherein the first hole spacing is greater than or equal to the second hole spacing. Exemplarily, the ratio of the first hole spacing to the second hole spacing can be specifically set according to actual needs.

[0112] Please refer to Figure 7In some examples, the reaction chamber further includes: a top air intake enclosure 230. The top air intake enclosure 230 may correspond to the periphery of the semiconductor workpiece 400. Exemplarily, the top air intake enclosure 230 may be an annular structure. Vertically, the top air intake enclosure 230 may extend a preset distance, which is conducive to guiding and limiting the first process gas to the first surface of the semiconductor workpiece 400, so that more of the first process gas can flow to the first surface of the semiconductor workpiece 400, and is conducive to fully contacting the first surface of the semiconductor workpiece 400, thereby improving the utilization rate of the first process gas.

[0113] The top air intake enclosure 230 is located in the first sub-chamber 100d and above the first diffuser plate 220. The top air intake enclosure 230, the first diffuser plate 220 and the inner wall of the first sub-chamber 100d define a gas diffusion chamber. Exemplarily, the top air intake enclosure 230 is located between the first diffuser plate 220 and the top wall of the first sub-chamber 100d, and a gas diffusion chamber is formed between the top air intake enclosure 230, the first diffuser plate 220 and the top wall of the first sub-chamber 100d. For example, the top air intake enclosure 230 may be cylindrical, the first diffuser plate 220 may be located at the lower opening of the top air intake enclosure 230, and the upper opening of the top air intake enclosure 230 may be connected to the top wall of the first sub-chamber 100d.

[0114] Part of the first air inlet pipeline 210 can be located between the top air inlet enclosure 230 and the top wall of the first sub-chamber 100d, so that the first process gas flowing out from the first outlet port 213 can enter the gas diffusion cavity for diffusion, and then pass through the first diffusion hole 221 of the first diffusion plate 220 and flow to the first surface of the semiconductor workpiece 400.

[0115] Alternatively, the top air intake enclosure 230 includes a top enclosure opening 231; the top enclosure opening 231 can be roughly located on one side of the top air intake enclosure 230 close to the air intake side 100a; the top enclosure opening 231 corresponds to the first gas outlet port 213, so that the first process gas entering from the first air intake pipeline 210 can enter the gas diffusion chamber through the first gas outlet port 213 for diffusion, and then pass through the first diffusion hole 221 of the first diffusion plate 220 and flow to the first surface of the semiconductor workpiece 400.

[0116] The first air outlet port 213 of the first air inlet duct 210 may be aligned with the top enclosure opening 231; or, the portion of the first air inlet duct 210 close to the first air outlet port 213 may extend from the top enclosure opening 231 into the gas diffusion chamber, so that the first air outlet port 213 of the first air inlet duct 210 is located in the gas diffusion chamber. The shape of the top enclosure opening 231 of the top air inlet enclosure 230 may be adapted to the shape of the first air outlet port 213. For example, the first air outlet port 213 is a substantially rectangular outlet, and the top enclosure opening 231 may be a rectangular opening, and the rectangular opening is slightly larger than the first air outlet port 213.

[0117] The first diffusion plate 220 has an area corresponding to the lower end of the top air intake enclosure 230 , and at least part of the first diffusion holes 221 are located in the area.

[0118] In addition, the top air inlet enclosure 230 may be provided with a notch, and the notch is used for allowing the first process gas after contacting the first surface of the semiconductor workpiece 400 to flow to the air outlet side 100 b.

[0119] In this example, the volume of the gas diffusion chamber can be configured to be suitable for temporarily storing the first process gas to slow down the flow rate of the first process gas, so that the first process gas is discharged to the first surface of the semiconductor workpiece 400 at a lower flow rate. The gas diffusion chamber also helps to make the first process gas pass through each first diffusion hole 221 uniformly, thereby improving the uniformity of the heat treatment.

[0120] The curvatures of the first gas outlet port 213 and the first diffuser plate 220 are adapted to the curvature of the semiconductor workpiece 400. For example, the curvature of the first diffuser plate 220 is substantially equal to the curvature of the semiconductor workpiece 400, and the curvature of the first gas outlet port 213 is substantially equal to the curvature of the first diffuser plate 220. In addition, the curvature of the top air intake enclosure 230 may also be adapted to the curvature of the first gas outlet port 213.

[0121] In some embodiments, a partition plate is provided in the chamber base 100, and the partition plate is used to separate the chamber base 100 into a first sub-chamber 100d and a second sub-chamber 100e. The partition plate can be made of quartz material. The partition plate has a partition opening adapted to the shape of the semiconductor workpiece 400, and the semiconductor workpiece 400 is located in the partition opening. In this way, the first sub-chamber 100d and the second sub-chamber 100e can be relatively independent, which is conducive to avoiding airflow disturbance in the first sub-chamber 100d and the second sub-chamber 100e.

[0122] The central axis of the partition opening of the partition plate can be coaxial with the central axis of the semiconductor workpiece 400, and the radius of the partition opening can be slightly larger than the radius of the semiconductor workpiece 400, so as to form a gap between the partition opening and the semiconductor workpiece 400 to allow the semiconductor workpiece 400 to rotate. Exemplarily, the difference between the radius of the partition opening and the radius of the semiconductor workpiece 400 can be greater than or equal to 0.5 mm and less than or equal to 2 mm. By setting a gap of 0.5-2 mm, not only can the semiconductor workpiece 400 be prevented from colliding with the partition plate, but also the flow of gas in the first sub-chamber 100d and the second sub-chamber 100e can be reduced as much as possible.

[0123] The reaction chamber provided in this embodiment can improve the uniformity of the process gas entering the reaction chamber, increase the utilization rate of the process gas, and improve the heat treatment effect on the semiconductor workpiece 400.

[0124] This embodiment also provides a reaction chamber, please refer to Figure 8 and Fig. 9 , the air outlet portion 612 of the side air inlet plate 610 may be provided with a plurality of air outlet holes 612a, wherein some of the air outlet holes 612a correspond to the first sub-chamber 100d, so that the process gas flowing out of the part of the air outlet holes 612a enters the first sub-chamber 100d; another part of the air outlet holes 612a corresponds to the second sub-chamber 100e, so that the process gas flowing out of the part of the air outlet holes 612a enters the second sub-chamber 100e. Wherein, the air inlet portion 611 of the side air inlet plate 610 may be provided with at least two air inlets, and the process gas entering from at least one of the air inlets can enter the first sub-chamber 100d through some of the air outlet holes 612a; the process gas entering from at least one of the air inlets can enter the second sub-chamber 100e through some of the air outlet holes 612a. The side air inlet plate 610 may be made of metal.

[0125] The first air intake device 200 may include: a portion of the side air intake plate 610 provided with the air outlet 612a corresponding to the first sub-chamber 100d; in this case, the first air intake device 200 may no longer be provided with the first air intake pipeline 210 and the first diffuser plate 220. The third air intake device 600 may include: a portion of the side air intake plate 610 provided with the air outlet 612a corresponding to the second sub-chamber 100e.

[0126] The gas outlet holes 612a of the side gas inlet plate 610 may have different specifications. For example, the side gas inlet plate 6103 has two opposite edge areas in the transverse direction, and has a middle area between the two edge areas; the edge areas and the middle area are respectively provided with gas outlet holes 612a. The central axis of the gas outlet holes 612a located in the middle area may be parallel to the longitudinal center plane of the chamber base 100. The gas outlet holes 612a located in the two edge areas may be arranged tilted, and along the direction toward the central axis of the chamber base 100, the gas outlet holes 612a located in the edge areas gradually tilt in a direction away from the middle area, that is, the gas outlet holes 612a located in the edge areas gradually tilt in a direction away from the longitudinal center plane of the chamber base 100, so as to facilitate the third process gas discharged from the gas outlet holes 612a located in the edge areas to flow to the edge of the semiconductor workpiece 400.

[0127] For ease of description, the example of the preset angle between the air outlet holes 612a in the edge area and the longitudinal center plane of the chamber base 100 is used for explanation. The two edge areas can be respectively provided with multiple air outlet holes 612a; the preset angle gradually increases in the direction away from the middle area.

[0128] For example, the preset angle corresponding to the air outlet 612a near the middle area in the edge region is greater than or equal to 2 degrees and less than or equal to 3 degrees. Taking the preset angle of 2.5 degrees corresponding to the air outlet 612a near the middle area in the edge region as an example, the preset angle corresponding to the air outlet 612a far from the middle area in the edge region may be 5 degrees. It can be understood that the preset angle between every two adjacent air outlets 612a in the edge region may be 2.5 degrees.

[0129] The gas flow rate through the gas outlet holes 612a in the middle area and the gas flow rate through the gas outlet holes 612a in the edge area can be adjusted according to the process requirements. For example, if a larger amount of gas needs to be applied to the central part of the semiconductor workpiece 400, the diameter of the gas outlet holes 612a in the middle area can be set to be larger than the diameter of the gas outlet holes 612a in the edge area, or the density of the gas outlet holes 612a in the middle area can be set to be larger than the density of the gas outlet holes 612a in the edge area. For another example, if the gas demand of the central part of the semiconductor workpiece 400 is the same as the gas demand of the edge part of the semiconductor workpiece 400, the diameter of the gas outlet holes 612a in the middle area can be set to be equal to the diameter of the gas outlet holes 612a in the edge area, or the density of the gas outlet holes 612a in the middle area can be set to be equal to the density of the gas outlet holes 612a in the edge area.

[0130] The orthographic projection of the central axis of one of the exhaust holes 612a on the preset projection plane coincides with the orthographic projection of the central axis of the corresponding exhaust hole 612a in another row on the preset projection plane; the preset projection plane is parallel to the horizontal and vertical directions. Alternatively, the orthographic projection of the central axis of one of the exhaust holes 612a on the preset projection plane is staggered with the orthographic projection of the central axis of the corresponding exhaust hole 612a in another row on the preset projection plane; the preset projection plane is parallel to the horizontal and vertical directions.

[0131] There can be multiple equal pressure chambers 613; at least two equal pressure chambers 613 are arranged in a vertical interval; the equal pressure chamber 613 located relatively above is connected to at least one exhaust hole 612a located relatively above, so that the process gas entering the equal pressure chamber 613 can enter the first sub-chamber 100d; the equal pressure chamber 613 located relatively below is connected to at least one exhaust hole 612a located relatively below, so that the process gas entering the equal pressure chamber 613 can enter the second sub-chamber 100e.

[0132] The present embodiment also provides a reaction chamber, wherein the air inlet portion 611 of the side air inlet plate 610 may be provided with at least two air inlets, and the air outlet portion 612 of the side air inlet plate 610 may be provided with at least two air outlet holes 612a; the process gas entering from at least one of the air inlets can enter the first sub-chamber 100d through at least one air outlet hole 612a; the process gas entering from at least one air inlet can enter the second sub-chamber 100e through at least one air outlet hole 612a.

[0133] When the number of the outlet holes 612a provided on the side air inlet plate 610 is relatively small, in order to improve the uniformity of the process gas entering the first sub-chamber 100d and the second sub-chamber 100e, a side diffusion plate 620 is provided on the inner side of the side air inlet plate 610, and the side diffusion plate 620 has a first area and a second area, and the first area is located above the second area. The first area and the second area are respectively provided with second diffusion holes. The first area can correspond to the first sub-chamber 100d, and the second area can correspond to the second sub-chamber 100e. The second diffusion holes located in the first area are used to uniformly diffuse the first process gas entering the first sub-chamber 100d from the side air inlet plate 610, and the second diffusion holes located in the second area are used to uniformly diffuse the third process gas entering the second sub-chamber 100e from the side air inlet plate 610.

[0134] The first air intake device 200 may include: a portion of the side diffuser plate 620 corresponding to the first sub-chamber 100d. The third air intake device 600 may include: a portion of the side diffuser plate 620 corresponding to the second sub-chamber 100e.

[0135] The side diffuser plate 620 may be extended in the lateral direction. For example, the side diffuser plate 620 may have a lateral dimension greater than or equal to the diameter of the semiconductor workpiece 400, so that the process gas flowing out of the second diffusion hole of the side diffuser plate 620 can cover the semiconductor workpiece 400. The side diffuser plate 620 may be extended in the vertical direction; the upper edge of the side diffuser plate 620 may contact the top wall of the first sub-chamber 100d, and the lower edge of the side diffuser plate 620 may contact the bottom wall of the second sub-chamber 100e. The longitudinal center plane of the side diffuser plate 620 may coincide with the longitudinal center plane of the semiconductor workpiece 400.

[0136] In some examples, the plurality of second diffusion holes located in the first region are evenly distributed, wherein the second diffusion holes located in the first region may be distributed in at least one row, and the spacing between two adjacent second diffusion holes in each row may be equal.

[0137] The plurality of second diffusion holes located in the second region are evenly distributed. The second diffusion holes located in the second region may be distributed in at least one row, and the spacing between two adjacent second diffusion holes in each row may be equal.

[0138] In other examples, for the multiple second diffusion holes located in the first area or the second area, the side diffusion plate 620 has two edges opposite to each other in the transverse direction, and the spacing between two adjacent second diffusion holes can increase in the direction toward the two edges; or, the side diffusion plate 620 has two edges opposite to each other in the transverse direction, and the spacing between two adjacent second diffusion holes can decrease in the direction toward the two edges; or, the side diffusion plate 620 has two edges opposite to each other in the transverse direction, and the spacing between two adjacent second diffusion holes can gradually decrease in the direction away from the edges.

[0139] The area of ​​the first region is greater than or equal to the area of ​​the second region. For example, when the amount of the first process gas entering the first sub-chamber 100d needs to be greater than or equal to the amount of the second process gas entering the second sub-chamber 100e, the area of ​​the first region may be greater than or equal to the area of ​​the second region, so that the opening area of ​​the first region is greater than or equal to the opening area of ​​the second region. It can be understood that the area of ​​the first region and the area of ​​the second region can be specifically set according to process requirements.

[0140] The number of the second diffusion holes in the first region is greater than that in the second region, so that the amount of the first process gas entering the first sub-chamber 100d from the second diffusion holes in the first region is greater than the amount of the second process gas entering the second sub-chamber 100e.

[0141] The diameter of the second diffusion hole in the first region is greater than or equal to the diameter of the second diffusion hole in the second region, so that the amount of the first process gas entering the first sub-chamber 100d from the second diffusion hole in the first region is greater than the amount of the second process gas entering the second sub-chamber 100e.

[0142] In the multiple rows of second diffusion plates located in the first area or the second area, the central axes of at least two rows of second diffusion holes are staggered; or, in the multiple rows of second diffusion plates located in the first area or the second area, the central axes of at least two rows of second diffusion holes are oppositely arranged.

[0143] Among the plurality of second diffusion holes located in the first region, the distance between the second diffusion hole located relatively below and the first surface of the semiconductor workpiece 400 is less than or equal to the first threshold. The specific value of the first threshold can be set according to actual needs. Optionally, the distance between the second diffusion hole located below and the first surface of the semiconductor is greater than the thickness of the semiconductor workpiece 400.

[0144] In this example, by reasonably setting the distance between the second diffusion hole located below and the first surface of the semiconductor, it is beneficial to improve the utilization rate of the first process gas and adapt to semiconductor workpieces 400 located at different heights, so that the reaction chamber of this embodiment can be applied to more scenarios.

[0145] The second diffusion holes located in the first region may be straight holes. Alternatively, at least a portion of the second diffusion holes located in the first region are inclined, and along the direction toward the central axis of the chamber base 100, the second diffusion holes are gradually inclined downward, so as to facilitate guiding the first process gas to flow toward the first surface of the semiconductor workpiece 400.

[0146] For example, the second diffusion holes in the first region are distributed in two rows, wherein the second diffusion holes in the lower row are straight holes, and the second diffusion holes in the upper row are arranged obliquely, and the second diffusion holes are arranged gradually obliquely downward in the direction toward the central axis of the chamber base 100. Alternatively, the second diffusion holes in both rows are arranged obliquely, and the central axis of the second diffusion holes in the lower row has a first angle with the horizontal plane, and the central axis of the second diffusion holes in the upper row has a second angle with the horizontal plane; the first angle and the second angle may be equal, or the first angle is greater than the second angle, or the first angle is less than the second angle; the specific values ​​of the first angle and the second angle may be set according to actual needs.

[0147] The distribution of the second diffusion holes in the side diffusion plate 620 is not limited to the above example, and can be specifically configured according to actual needs.

[0148] Optionally, the side diffusion plate 620 has two edges opposite to each other in the transverse direction, and along the direction toward the central axis of the chamber base 100, the side diffusion plate 620 has two edges spaced apart in the transverse direction, and the second diffusion holes close to the two edges are arranged obliquely in opposite directions. The diameter of the second diffusion holes close to the two opposite edges may be smaller than the diameter of the remaining second diffusion holes. The specific value of the diameter of each second diffusion hole can be set according to actual needs, and this embodiment is not limited here.

[0149] Please refer to Figures 10 to 12 , this embodiment also provides a reaction chamber, the reaction chamber includes: an inner chamber enclosure 120, located in the chamber base 100. The inner chamber enclosure 120 includes a first enclosure portion 121 and two enclosure walls 122 extending from the first enclosure portion 121. The interior of the first enclosure portion 121 may include a gas channel for process gas to pass through. The specific structure of the gas channel in the first enclosure portion 121 can be set according to actual needs. The two enclosure walls 122 are respectively provided with gas outlets, and the two enclosure walls 122 at least partially surround the support device 110 and fit the edge of the support device 110.

[0150] In some scenarios, the process gas flowing out of the gas outlet can be used to supply air to the edge of the semiconductor workpiece 400; in this case, it can be selected whether to set the second air inlet pipeline 510 according to actual needs. In other scenarios, at least part of the process gas flowing out of the gas outlet of the inner chamber enclosure 120 can flow to the first sub-chamber 100d to flow to the first surface of the semiconductor workpiece 500; optionally, the inner chamber enclosure 120 can constitute at least part of the first air inlet device 200. In still other scenarios, at least part of the process gas flowing out of the gas outlet of the inner chamber enclosure 120 can flow to the second sub-chamber 100e to flow to the second surface of the semiconductor workpiece 500; optionally, the inner chamber enclosure 120 can constitute at least part of the third air inlet device 600.

[0151] In other words, the inner chamber enclosure 120 can be used to replenish air to at least one of the first sub-chamber 100d and the second sub-chamber 100e; or, the inner chamber enclosure 120 can also be used to replace the first air intake duct 210 and the first diffuser plate 220 in the aforementioned example; or, the inner chamber enclosure 120 can also be used to replace the side air intake plate 610 and the side diffuser plate 620 in the aforementioned example; or, the inner chamber enclosure 120 can be used to replenish air to the first sub-chamber 100d, and the inner chamber enclosure 120 can also be used to replace the side air intake plate 610 and the side diffuser plate 620 in the aforementioned example, and the specific setting can be made according to actual needs.

[0152] A bottom plate 101 is disposed on the bottom wall of the chamber base 100, a first diffuser plate 220 is disposed on the top wall of the chamber base 100, and the inner chamber enclosure 120 may be located between the bottom plate 101 and the first diffuser plate 220. Alternatively, the inner chamber enclosure 120 may also be located between the support device 110 and the bottom wall of the chamber base 100. Alternatively, the inner chamber enclosure 120 may be located between the support device 110 and the top wall of the chamber base 100. Alternatively, the inner chamber enclosure 120 may be located between the top wall of the chamber base 100 and the bottom wall of the chamber base 100. The location of the inner chamber enclosure 120 may be set according to actual needs.

[0153] The first enclosure portion 121 may be disposed close to the air inlet side 100a. The two enclosure walls 122 may be disposed close to the two middle sides 100f, respectively, and the two enclosure walls 122 may extend in a direction toward the air outlet side 100b.

[0154] The portion of the first enclosure 121 close to the air inlet side 100a is adapted to the portion of the chamber base 100 corresponding to the air inlet side 100a; the portion of the first enclosure 121 away from the air inlet side 100a can be curved, and can specifically be adapted to the supporting device 110 or the semiconductor workpiece 400, thereby helping to reduce the space actually involved in the heat treatment in the chamber base 100 and improve the utilization rate of the process gas.

[0155] The two enclosure walls 122 may extend along the edge of the support device 110 to better fit the support device 110. In some examples, the two enclosure walls 122 are arranged along opposite bends at one end facing the gas outlet side 100b, and the two enclosure walls 122 are respectively provided with gas outlets, and the size of the gas outlets can be set according to actual needs. The two enclosure walls 122 may be symmetrically arranged about the longitudinal center plane of the chamber base 100.

[0156] The process gas flowing through the inner chamber enclosure 120 may enter at least one of the first sub-chamber 100d and the second sub-chamber 100e.

[0157] In some examples, the gas channel of the first enclosure 121 may include a first sub-channel and a second sub-channel that are independent of each other, the first sub-channel is connected to the first sub-chamber 100d, and the second sub-channel is connected to the second sub-chamber 100e. In specific implementation, process gas can be introduced into the first sub-channel or the second sub-channel according to actual needs.

[0158] In other examples, the gas channel in the inner chamber enclosure 120 is a single channel, and the process gas exhausted from the inner chamber enclosure 120 can be exhausted into the first sub-chamber 100d to replenish the consumption of the process gas in the first sub-chamber 100d. Alternatively, the process gas exhausted from the inner chamber enclosure 120 is exhausted into the second sub-chamber 100e to avoid the gas flow of the first sub-chamber 100d and the second sub-chamber 100e from being connected.

[0159] In some examples, the inner chamber enclosure 120 further includes a second enclosure portion having the same configuration as the first enclosure portion 121, and the second enclosure portion is disposed between the enclosure wall 122 and the gas outlet side 100b of the chamber base 100, so that the process gas is discharged from the gas outlet side 100b through the second enclosure portion. The second enclosure portion can be integrally disposed with the enclosure wall 122 through an integral molding process.

[0160] This embodiment also provides a semiconductor process equipment, including: a reaction chamber in any of the above embodiments, a first mass flow controller, a second mass flow controller, a third mass flow controller, a main controller, a data processing unit, and a detection device.

[0161] The first mass flow controller is used to control the process gas entering the second sub-chamber 100e of the reaction chamber to prevent the process gas entering the first sub-chamber 100d of the reaction chamber from flowing to the second surface of the semiconductor workpiece 400. The second mass flow controller is used to control the process gas entering the second gas inlet device 500. The third mass flow controller is used to control the process gas entering the first sub-chamber 100d of the reaction chamber. The first mass flow controller, the second mass flow controller, and the third mass flow controller are electrically connected to the main controller respectively.

[0162] The detection device is used to detect the thickness of the functional film layer in the semiconductor workpiece 400 and / or the size of the hole in the semiconductor workpiece 400. The data processing unit is electrically connected to the detection device and the main controller respectively; wherein, when the data processing unit determines that the semiconductor workpiece 400 needs to be reprocessed according to the detection result of the detection device, the data processing unit sends a reprocessing instruction to the main controller; the main controller sends a gas replenishment instruction to the second mass flow controller based on the reprocessing instruction; the second mass flow controller controls the process gas entering the second gas inlet device 500 according to the gas replenishment instruction.

[0163] The detection device may adopt various technical solutions known to ordinary technicians in this field now and in the future, as long as it can detect the thickness of the functional film layer in the semiconductor workpiece 400 and / or the size of the hole in the semiconductor workpiece 400.

[0164] The data processing unit may be a chip with data processing capability. The data processing unit may be integrated with the main controller or may be independently configured. The data processing unit may determine whether the semiconductor workpiece 400 needs to be reprocessed, such as gas replenishment, based on parameters such as the thickness of the functional film layer in the semiconductor workpiece 400 and / or the size of the holes in the semiconductor workpiece 400 in the detection results. If the data processing unit determines that reprocessing is required based on the detection results, a reprocessing instruction may be sent to the main controller; wherein the reprocessing instruction may include a gas replenishment control parameter. After receiving the reprocessing instruction, the main controller determines that the control object is the second mass flow controller according to the reprocessing instruction, and converts the gas replenishment control parameter into a signal recognizable by the second mass flow controller, generates a gas replenishment instruction and sends it to the second mass flow controller; the second mass flow controller controls the process gas entering the second air intake device 500 according to the gas replenishment instruction, for example, the second mass flow controller controls the amount of gas entering the second air intake device 500, the gas replenishment duration, etc.

[0165] In addition, the semiconductor process equipment may further include diaphragm valves, the number and installation positions of which may be set according to actual needs. The diaphragm valves may be electrically connected to the master controller, so that the master controller adjusts the composition of the process gas entering the reaction chamber by controlling the on and off of the diaphragm valves.

[0166] For example, during the gas replenishment process, the gas supply path can be switched by controlling the corresponding diaphragm valve to adjust the composition of the process gas entering from the second gas inlet device 500. For example, the proportion of the catalytic gas component in the process gas entering from the second gas inlet device 500 can be increased.

[0167] Among them, the gas amount of the process gas entering the second sub-chamber 100e of the reaction chamber can be positively correlated with the gas amount of the process gas entering the first sub-chamber 100d of the reaction chamber to ensure that the process gas entering the second sub-chamber 100e can prevent the process gas entering the first sub-chamber 100d from flowing to the second surface of the semiconductor workpiece 400.

[0168] This embodiment further provides a semiconductor workpiece processing method, which can be implemented based on the reaction chamber in the aforementioned embodiment. The same points as the aforementioned embodiment will not be repeated in this embodiment.

[0169] Figure 6 Schematic diagram of the process of semiconductor workpiece processing provided by the embodiment of the present disclosure. Figure 6 The semiconductor workpiece processing method provided in this embodiment includes:

[0170] S610, supplying gas to the first gas inlet device; wherein the first process gas entering the first sub-chamber from the first gas inlet device can flow to the first surface of the semiconductor workpiece to process the first surface of the semiconductor workpiece;

[0171] S620, supplying gas to the second gas inlet device; wherein the second process gas entering from the second gas inlet device can replenish gas to the area near the edge of the first surface of the semiconductor workpiece and prevent the first process gas from flowing to the second surface of the semiconductor workpiece; the second surface is arranged opposite to the first surface, and the second surface is located below the first surface;

[0172] S630, supplying gas to the third gas inlet device; wherein the third process gas entering the second sub-chamber from the third gas inlet device can flow to the second surface of the semiconductor workpiece.

[0173] The gas supply states of the first gas intake device, the second gas intake device and the third gas intake device may be controlled respectively, and the gas supply states may include: starting gas supply, stopping gas supply, adjusting gas flow rate and the like.

[0174] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0175] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0176] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0177] In the present disclosure, unless otherwise expressly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0178] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0179] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A reaction chamber, comprising: A chamber base having a receiving space for receiving a semiconductor workpiece; wherein the chamber base has a first sub-chamber and a second sub-chamber, the first surface of the semiconductor workpiece is located in the first sub-chamber, and the second surface of the semiconductor workpiece is located in the second sub-chamber; the second surface is arranged opposite to the first surface, and the second surface is located below the first surface; a first gas inlet device connected to the gas inlet side of the first sub-chamber so that a first process gas entering the first sub-chamber from the first gas inlet device can flow to the first surface of the semiconductor workpiece; a second gas inlet device connected to the chamber base, wherein the second process gas entering from the second gas inlet device can flow to the edge of the semiconductor workpiece, so as to replenish gas to the area of ​​the first surface of the semiconductor workpiece close to the edge, and prevent the first process gas from flowing to the second surface of the semiconductor workpiece; The third gas inlet device is connected to the gas inlet side of the second sub-chamber, so that the third process gas entering the second sub-chamber from the third gas inlet device can flow to the second surface of the semiconductor workpiece.

2. The reaction chamber according to claim 1, wherein: The second air intake device is connected to the air intake side of the first sub-chamber.

3. The reaction chamber according to claim 1, wherein: The second air intake device comprises: a second air intake pipeline having a second air intake port and a second air outlet port; the second air outlet port is not higher than the first air outlet port of the first air intake device.

4. The reaction chamber according to claim 3, wherein: The air outlet direction of the second air inlet device is arranged perpendicular to the air outlet direction of the first air inlet device; The second air inlet port of the second air inlet device is disposed close to an edge of the air inlet side of the first sub-chamber.

5. The reaction chamber according to claim 1, wherein: The first air inlet device includes a first air inlet pipeline, the first air inlet pipeline has a first air inlet port, an expansion portion and a first air outlet port, the expansion portion is connected between the first air inlet port and the first air outlet port; the first air inlet port is used to communicate with a first air source; the expansion portion is located in the first sub-chamber; along the direction away from the first air inlet port, the expansion portion gradually expands along the radial direction of the semiconductor workpiece.

6. The reaction chamber according to claim 5, wherein: The first air inlet device further includes: a first diffusion plate, the first diffusion plate is located on a side of the first surface of the semiconductor workpiece away from the second surface, and the first diffusion plate is used to diffuse the first process gas flowing out of the first gas outlet port.

7. The reaction chamber according to claim 6, wherein: The first air outlet port of the first air inlet device is arc-shaped; The curvature of the first gas outlet port and the first diffusion plate is adapted to the curvature of the semiconductor workpiece.

8. The reaction chamber according to claim 5, wherein: The first air inlet port is disposed corresponding to a middle portion of an air inlet side of the first sub-chamber.

9. The reaction chamber according to claim 1, wherein: The third air intake device includes: a third air intake member and a third diffusion plate, and the third diffusion plate is used for diffusing the third process gas flowing out of the third air intake member.

10. The reaction chamber according to claim 1, wherein: The air inlet side of the first sub-chamber and the air inlet side of the second sub-chamber correspond to the same side of the chamber base.

11. A method for processing a semiconductor workpiece based on the reaction chamber according to any one of claims 1 to 10, comprising: supplying gas to a first gas inlet device; wherein the first process gas entering the first sub-chamber from the first gas inlet device can flow to the first surface of the semiconductor workpiece to process the first surface of the semiconductor workpiece; Supplying gas to a second gas inlet device; wherein the second process gas entering from the second gas inlet device can replenish gas to the area near the edge of the first surface of the semiconductor workpiece and prevent the first process gas from flowing to the second surface of the semiconductor workpiece; the second surface is arranged opposite to the first surface, and the second surface is located below the first surface; A gas is supplied to the third gas inlet device; wherein the third process gas entering the second sub-chamber from the third gas inlet device can flow to the second surface of the semiconductor workpiece.

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