Reaction chamber

Abstract

The invention provides a reaction chamber, and relates to the field of semiconductor manufacturing. The reaction chamber comprises a chamber base body which is used for accommodating a semiconductor workpiece; the cavity base body is provided with an air inlet side and an air outlet side which are opposite. The air inlet side of the cavity base body is provided with an air inlet channel. The lateral air inlet plate is connected to the air inlet side of the cavity base body; the side air inlet plate is provided with an air inlet hole, the air inlet hole is provided with an inclined section, the inclined section is connected with the end, away from the central axis of the cavity base body, of the air inlet channel, and a first preset angle which is an obtuse angle is formed between the hole wall of the inclined section and the corresponding hole wall of the air inlet channel.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure generally relate to the field of semiconductor manufacturing, and more particularly to a reaction chamber. Background Art

[0002] In semiconductor technology, wafer heat treatment is an important step. Wafer heat treatment is to heat the wafer placed in the chamber to a preset temperature and introduce the first process gas into the chamber to cause a chemical reaction on the wafer. How to achieve the uniformity of the first process gas in the chamber is one of the research topics. Summary of the invention

[0003] An object of the present disclosure is to provide a reaction chamber capable of improving the uniformity of a first process gas in the reaction chamber.

[0004] The present disclosure provides a reaction chamber, comprising: a chamber base, the chamber base is used to accommodate semiconductor workpieces; the chamber base has an opposite air inlet side and an air outlet side; the air inlet side of the chamber base is provided with an air inlet channel; a side air inlet plate, the side air inlet plate is connected to the air inlet side of the chamber base; the side air inlet plate is provided with an air inlet hole, the air inlet hole has an inclined section, the inclined section is connected to an end of the air inlet channel away from the central axis of the chamber base, and a first preset angle of an obtuse angle is formed between the hole wall of the inclined section and the corresponding hole wall of the air inlet channel.

[0005] In some embodiments, along the direction toward the central axis of the chamber base, the axial direction of the inclined section gradually inclines toward the direction of gravity.

[0006] In some embodiments, the first preset angle is greater than or equal to 150°; the preset angle is less than or equal to 165°.

[0007] In some embodiments, there are a plurality of air inlet holes, and the plurality of air inlet holes are spaced apart and evenly distributed.

[0008] In some embodiments, the air inlet channel has a first section and a second section, the first section is located between the inclined section and the second section; the hole wall of the first section is straight, and at least part of the hole wall of the second section is inclined; there is a second preset angle of an obtuse angle between the hole wall of the first section and the inclined part of the hole wall of the second section.

[0009] In some embodiments, the second section is tapered.

[0010] In some embodiments, the second preset angle is greater than or equal to the first preset angle.

[0011] In some embodiments, the second preset angle is greater than or equal to 165°; the preset angle is less than or equal to 175°.

[0012] In some embodiments, the reaction chamber further includes: a side diffusion plate, the side diffusion plate is located on the inner side of the air inlet channel toward the central axis of the chamber base, and the side diffusion plate is used to diffuse the first process gas flowing out of the air inlet channel.

[0013] In some embodiments, the reaction chamber further includes: an air flotation device, which provides a force to lift the semiconductor workpiece; wherein the air flotation device has an air inlet pipe, and a pipe through hole is provided on the air inlet side of the chamber base, and the air inlet pipe is passed through the pipe through hole; there is a gap between the air inlet pipe and the hole wall of the pipe through hole; the air inlet channel includes the gap.

[0014] It should be understood that the contents described in the summary of the invention are not intended to limit the key or important features of the embodiments of the present disclosure, nor are they intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. In the accompanying drawings, the same or similar reference numerals represent the same or similar elements, wherein:

[0016] Figure 1 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present disclosure;

[0017] Figure 2 yes Figure 1 A magnified schematic diagram of part A;

[0018] Figure 3 It is a schematic diagram of the partial structure of the reaction chamber provided in an embodiment of the present disclosure.

[0019] Explanation of the reference numerals: 100 - chamber base; 100a - air inlet side; 100b - receiving space; 100c - pipeline hole; 100d - air outlet side; 110 - air inlet channel; 111 - first section; 112 - second section; 113 - third section; 200 - side air inlet plate; 210 - air inlet hole; 300 - air flotation device; 310 - air inlet pipeline. DETAILED DESCRIPTION

[0020] The following is a description of exemplary embodiments of the present disclosure in conjunction with the accompanying drawings, including various details of the embodiments of the present disclosure to facilitate understanding, which should be considered as merely exemplary. Therefore, it should be recognized by those of ordinary skill in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present disclosure. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0021] Figure 1 is a schematic structural diagram of a reaction chamber provided in an embodiment of the present disclosure; Figure 2 yes Figure 1 A magnified schematic diagram of part A; Figure 3 It is a schematic diagram of the partial structure of the reaction chamber provided in an embodiment of the present disclosure. Figure 1 It is a cross-sectional view after the reaction chamber is cut open along a vertical section plane passing through the air inlet.

[0022] Figure 3 Specifically, it is a side view schematic diagram of a portion of the reaction chamber after the reaction chamber is cut open along a vertical section plane passing through the central axis of the air inlet hole; Figure 3 The dotted arrows in FIG. 1 are used to illustrate the flow direction of the first process gas.

[0023] Please refer to Figures 1 to 3 , this embodiment provides a reaction chamber, including: a chamber base 100 and a side air inlet plate 200. The chamber base 100 can be a columnar structure. For example, the chamber base 100 can be cylindrical or prismatic. The hollow portion in the chamber base 100 forms a receiving space 100b, and the receiving space 100b is used to receive the semiconductor workpiece. The reaction chamber may also include a heating device, and the heating device is used to heat the semiconductor workpiece; the heating device may have two parts, respectively heating the first surface and the second surface of the semiconductor workpiece. At least a part of the heating device may also be located in the receiving space 100b.

[0024] For ease of description, the following description will take the axial direction of the chamber base 100 (i.e., the thickness direction of the semiconductor workpiece) as the vertical direction, the gravity direction as the downward direction, the first surface of the semiconductor workpiece above the second surface, and the central axis of the chamber base 100 as the inward direction as an example.

[0025] The chamber base 100 has an upper end wall and a lower end wall spaced apart from each other along the axial direction of the chamber base 100. The upper end wall and the lower end wall of the chamber base 100 are connected with a side wall.

[0026] The chamber base 100 has an air inlet side 100a and an air outlet side 100d opposite to each other. The air inlet side 100a and the air outlet side 100d are respectively located on opposite sides of the chamber base 100, so as to facilitate the first process gas to flow in the chamber base 100 and form a stable gas flow field. The semiconductor workpiece is located in the stable gas flow field, which can improve the renewal efficiency of the first process gas involved in the heat treatment on the semiconductor workpiece. Exemplarily, when the chamber base 100 is prismatic, the air inlet side 100a and the air outlet side 100d correspond to two opposite side walls respectively; when the chamber base 100 is cylindrical, a plane passing through the central axis intersects with the side wall and has two intersection lines, and the air inlet side 100a and the air outlet side 100d are respectively arranged near the two intersection lines. The air inlet side 100a of the chamber base 100 is provided with an air inlet channel 110, and the air inlet channel 110 can be connected with the interior of the chamber base 100.

[0027] The side air inlet plate 200 is connected to the air inlet side 100a of the chamber base 100. The side air inlet plate 200 is in the shape of a flat plate, and is located outside the chamber base 100. The side air inlet plate 200 can be detachably connected to the side wall of the chamber base 100 located on the air inlet side 100a by fasteners, or the side air inlet plate 200 can be connected to the side wall of the chamber base 100 located on the air inlet side 100a by welding or the like. Alternatively, the side air inlet plate 200 includes a flat plate body and a plug-in portion, the flat plate body is located outside the chamber base 100, and the plug-in portion is inserted into an opening of the side wall of the chamber base 100 located on the air inlet side 100a; wherein the plug-in portion can be interference fit with the opening, or the flat plate body is detachably connected to the side wall of the chamber base 100 located on the air inlet side 100a by fasteners.

[0028] The side air inlet plate 200 is provided with an air inlet hole 210, which can be connected to a first gas source for providing a first process gas. The air inlet hole 210 is provided through the side air inlet plate 200, so that the first process gas provided by the first gas source can enter the chamber base 100 through the air inlet hole 210.

[0029] The gas inlet hole 210 has an inclined section, and the inclined section is connected to an end of the gas inlet channel 110 away from the central axis of the chamber base 100. There is a first preset angle between the hole wall of the inclined section and the corresponding hole wall of the gas inlet channel 110, so that when the first process gas flows from the inclined section to the gas inlet channel 110, the first process gas will collide with the connection between the inclined section and the gas inlet channel 110, thereby improving the diffusion effect of the first process gas and improving the uniformity of the first process gas in the chamber base 100.

[0030] The first preset angle refers to the amount of rotation when the hole wall of the inclined section is parallel to the corresponding hole wall of the air inlet passage 110 in the clockwise direction.

[0031] Among them, at least part of the air inlet 210 is inclined, and the inclined part of the air inlet 210 forms an inclined section. For example, the entire air inlet 210 is inclined, that is, the air inlet 210 is an inclined hole, and the entire air inlet 210 is an inclined section. For another example, a part of the air inlet 210 is a straight section that is straight, and the other part is an inclined section that is inclined; the straight section can be connected to one end of the inclined section that is away from the air inlet channel 110, that is, the inclined section can be connected between the straight section and the air inlet channel 110. In other examples, the straight section can also be connected between the inclined section and the air inlet channel 110, then when the first process gas flows from the inclined section to the straight section, the first process gas will collide with the connection between the inclined section and the straight section.

[0032] The air inlet channel 110 is used to connect the air inlet hole 210 with the receiving space 100b in the chamber base 100. The air inlet channel 110 extends in a direction toward the inside of the chamber base 100. The air inlet channel 110 may include a circular hole, a conical hole, or a polygonal hole, as long as the above functions can be achieved, and the specific shape of the air inlet channel 110 may be set according to actual needs.

[0033] Optionally, the air inlet channel 110 has a central axis parallel to the horizontal direction, and the axial direction of the inclined section is inclined relative to the axial direction of the air inlet channel 110. The portion of the air inlet channel 110 close to the inclined section may be in a straight hole shape, and the axial direction of the inclined section and the axial direction of the air inlet channel 110 may also have a first preset angle.

[0034] The aperture of the air inlet hole 210 is smaller than the aperture of the air inlet channel 110, and the aperture ratio of the air inlet hole 210 to the aperture of the air inlet channel 110 can be set according to actual needs. The air inlet hole 210 is arranged relatively close to the hole wall of the air inlet channel 110 to prevent the components located in the air inlet channel 110 from interfering with the flow of the first process gas from the air inlet hole 210 to the air inlet channel 110. For example, the air inlet hole 210 is arranged close to the hole wall located below the air inlet channel 110, so that the hole wall located below the air inlet hole 210 can be connected to the hole wall located below the air inlet channel 110, and there is a first preset angle between the hole wall located below the air inlet hole 210 and the hole wall located below the air inlet channel 110.

[0035] In some examples, the axial direction of the inclined section gradually inclines downward along the direction toward the central axis of the chamber base 100; that is, along the direction toward the central axis of the chamber base 100, the distance between the central axis of the inclined section and the central axis of the gas inlet channel 110 gradually increases. In this way, under the action of gravity, more first process gas will hit the connection between the inclined section and the gas inlet channel 110, thereby improving the diffusion effect of the first process gas, thereby improving the uniformity of the first process gas in the chamber base 100.

[0036] In other examples, the axial direction of the inclined section gradually tilts upward along the direction toward the central axis of the chamber base 100; that is, along the direction toward the central axis of the chamber base 100, the distance between the central axis of the inclined section and the central axis of the air inlet channel 110 gradually decreases. Of course, taking the direction from the air inlet side 100a to the air outlet side as from left to right as an example, the chamber base 100 also has a front side and a rear side; along the direction toward the central axis of the chamber base 100, the inclined section can also gradually tilt forward or backward.

[0037] In other examples, the axial direction of the inlet channel 110 may also be inclined relative to the horizontal direction, for example, the axial direction of the inlet channel 110 gradually inclines upward in the direction toward the central axis of the chamber base 100. As long as the first process gas can hit the connection between the inclined section and the inlet channel 110 when it flows from the inclined section to the inlet channel 110, it is sufficient.

[0038] The first preset angle may be an obtuse angle to reduce the energy loss of the first process gas due to the change in flow path caused by impacting the connection between the inclined section and the air inlet channel 110, thereby ensuring that the first process gas enters the chamber base 100 more smoothly from the inclined section.

[0039] Optionally, in order to ensure that the first process gas has a good diffusion effect and that the first process gas enters the chamber base 100 more smoothly from the inclined section, the first preset angle is greater than or equal to 150°, and the preset angle is less than or equal to 165°. For example, the first preset angle may be 150°, 151°, 152°, 153°, 154°, 155°, 156°, 157°, 158°, 159°, 160°, 161°, 162°, 163°, 164°, or 165°, or an angle between any two of the above.

[0040] Optionally, the inclined section may be a variable diameter hole. For example, the inclined section may include a small diameter portion and a large diameter portion, wherein the diameter of the small diameter portion is smaller than the diameter of the large diameter portion. The large diameter portion is connected between the small diameter portion and the air intake passage 110 .

[0041] The reaction chamber provided in the present embodiment is provided with an air inlet channel 110 on the air inlet side 100a of the chamber base 100, and a side air inlet plate 200 is provided on the air inlet side 100a of the chamber base 100, and the side air inlet plate 200 is provided with an air inlet hole 210, and the air inlet hole 210 has an inclined section, and the inclined section is connected to the end of the air inlet channel 110 away from the central axis of the chamber base 100, and there is a first preset angle of an obtuse angle between the hole wall of the inclined section and the corresponding hole wall of the air inlet channel 110, so that in the process of the first process gas flowing from the inclined section to the air inlet channel 110, the first process gas will collide with the connection between the inclined section and the air inlet channel 110, thereby improving the diffusion effect of the first process gas, which is beneficial to improving the uniformity of the first process gas in the chamber base 100.

[0042] In some embodiments, there are multiple air inlet holes 210, and the multiple air inlet holes 210 are spaced and evenly distributed. Exemplarily, the side air inlet plate 200 is provided with one or more rows of air inlet holes 210. Each row has multiple spaced and evenly distributed air inlet holes 210. When the side air inlet plate 200 is provided with multiple rows of air inlet holes 210, each row of air inlet holes 210 is spaced and distributed vertically; wherein, two adjacent rows of air inlet holes 210 can be arranged correspondingly, or, two adjacent rows of air inlet holes 210 can be staggered; the number of air inlet holes 210 in two adjacent rows can be equal or unequal.

[0043] The plurality of air inlet holes 210 may be respectively connected to the air inlet channels 110. The plurality of air inlet holes 210 may be connected to the same air inlet channel 110. Alternatively, at least two of the plurality of air inlet holes 210 are connected to different air inlet channels 110. The specific number of the air inlet channels 110 may be set according to actual needs, as long as the air inlet holes 210 can be connected to the interior of the chamber base 100.

[0044] In this embodiment, by providing a plurality of air inlet holes 210 , the first process gas flowing out from the side air inlet plate 200 is diffused, which helps to improve the uniformity of the first process gas in the chamber base 100 .

[0045] It is understandable that the number of the air inlet holes 210 can be set according to actual needs. In other embodiments, there can also be one air inlet hole 210 .

[0046] In some embodiments, the inlet channel 110 has a first section 111 and a second section 112, and the first section 111 is located between the inclined section and the second section 112; the hole wall of the first section 111 is straight, and at least part of the hole wall of the second section 112 is inclined. There is a second preset angle of an obtuse angle between the hole wall of the first section 111 and the inclined part of the hole wall of the second section 112. In this way, when the first process gas flows from the first section 111 to the second section 112, the first process gas will hit the connection between the first section 111 and the second section 112, thereby improving the diffusion effect of the first process gas and improving the uniformity of the first process gas in the chamber base 100; and it can reduce the energy lost by the first process gas due to the change of the flow path due to the collision with the connection between the first section 111 and the second section 112, which is conducive to the first process gas flowing from the first section 111 to the second section 112 more smoothly.

[0047] The second preset angle refers to the amount of rotation when the hole wall of the first section 111 is parallel to the inclined portion of the hole wall of the second section 112 in the clockwise direction. The hole wall of the first section 111 is parallel to the axial direction of the air inlet passage 110, and there is a first preset angle between the hole wall of the air inlet hole 210 and the hole wall of the first section 111.

[0048] In the direction toward the inside of the chamber base 100, the cross-sectional area of ​​the second section 112 perpendicular to the axial direction of the inlet channel 110 gradually decreases. In some examples, the second section 112 may be tapered. In the direction toward the central axis of the chamber base 100, the hole wall of the second section 112 gradually tilts toward the central axis of the inlet channel 110; that is, in the direction toward the inside of the chamber base 100, the distance between the hole wall of the second section 112 and the central axis of the inlet channel 110 gradually decreases, so that in the process of the first process gas flowing from the first section 111 to the second section 112, more first process gas will hit the connection between the first section 111 and the second section 112.

[0049] In other examples, along the direction toward the central axis of the chamber base 100, a portion of the hole wall of the second section 112, such as a portion of the hole wall of the second section 112 located relatively at the bottom, gradually tilts toward the central axis of the air inlet channel 110. Alternatively, a portion of the hole wall of the second section 112 located relatively at the front, rear, or top may gradually tilt toward the central axis of the air inlet channel 110.

[0050] In other examples, at least a portion of the hole wall of the second section 112 is inclined along the direction toward the central axis of the chamber base 100 and gradually away from the central axis of the inlet channel 110, so that the first process gas will also diffuse to a certain extent during the process of flowing from the first section 111 to the second section 112.

[0051] In some examples, the second preset angle is greater than or equal to the first preset angle, which reduces the kinetic energy lost by the first process gas when the first process gas flows from the first section 111 to the second section 112, and facilitates the first process gas to smoothly enter the chamber base 100. Exemplarily, the difference between the second preset angle and the first preset angle can be 5°, 7°, 10°, 12°, or 15°, or the angle difference between any two of the above.

[0052] In some examples, the second preset angle is greater than or equal to 165°; the preset angle is less than or equal to 175°. In order to take into account the diffusion effect of the first process gas and reduce energy loss, the second preset angle is greater than or equal to 165°; the preset angle is less than or equal to 175°. For example, the first preset angle can be 165° or 166° or 167° or 168° or 169° or 170° or 171° or 172° or 173° or 174° or 175°, or an angle between any two of the above.

[0053] In some embodiments, the reaction chamber further includes: a side diffusion plate, the side diffusion plate is located on the inner side of the air inlet channel 110 toward the central axis of the chamber base 100 , and the side diffusion plate is used to diffuse the first process gas flowing out of the air inlet channel 110 .

[0054] Among them, the side diffuser plate can be in the shape of a flat plate. The side diffuser plate can be detachably connected to the side wall of the chamber base 100 by fasteners. The side diffuser plate can be provided with diffusion holes. The diffusion holes are arranged in a direction from the air inlet side 100a toward the air outlet side. The diffusion holes can be distributed in one row or multiple rows. Each row has a plurality of evenly distributed diffusion holes. The aperture of the diffusion hole can be smaller than the aperture of the air inlet hole 210, and the distribution density of the diffusion holes can be greater than the distribution density of the air inlet hole 210. The size of the side diffuser plate, the aperture of the diffusion hole, the distribution density of the diffusion hole, etc. can be set according to actual needs.

[0055] In this embodiment, the side diffusion plate can further diffuse the first process gas entering the chamber base 100 , thereby further improving the uniformity of the first process gas in the chamber base 100 .

[0056] In one embodiment, the reaction chamber further includes: an air flotation device 300, which is used to provide a second process gas, and the second process gas can act on the lower surface of the semiconductor workpiece, so that the force applied by the second process gas to the semiconductor workpiece can lift the semiconductor workpiece.

[0057] Exemplarily, the air flotation device 300 includes: an air inlet pipeline 310 and an air flotation block. The air inlet pipeline 310 is connected to a second gas source, and the second gas source is used to provide a second process gas. The air inlet side 100a of the chamber base 100 is provided with a pipeline through hole 100c, and the air inlet pipeline 310 is passed through the pipeline through hole 100c. The air flotation block is located below the semiconductor workpiece, and the air flotation block is connected to the air inlet pipeline 310. The second process gas in the air inlet pipeline 310 flows to the lower surface of the semiconductor workpiece through the air flotation block to lift the semiconductor workpiece. There can be multiple air flotation blocks, at least three of which are distributed along a preset circumference to improve the support stability of multiple semiconductor workpieces; the diameter of the preset circumference is smaller than the diameter of the semiconductor workpiece.

[0058] There is a gap between the air intake pipeline 310 and the hole wall of the pipeline through hole 100c, and the gap constitutes at least a part of the air intake channel 110. The size of the gap can be set according to actual needs.

[0059] In some examples, the air intake passage 110 includes a first section 111, a second section 112, and a third section 113. The first section 111 and the second section 112 are the same as those in the above-mentioned embodiment. A gap is provided between the air intake pipeline 310 and the hole wall of the pipeline via hole 100c to form the third section 113. The third section 113 is connected to an end of the second section 112 away from the first section 111. The hole wall of the third section 113 may be straight. In other examples, the air intake passage 110 includes a first section 111 and a second section 112, wherein there is a gap between the air intake pipeline 310 and the hole wall of the pipeline via hole 100c.

[0060] In this embodiment, through the above arrangement, the gap between the air inlet pipeline 310 and the hole wall of the pipeline through hole 100 c can be fully utilized, and the number of openings on the chamber base 100 can be reduced.

[0061] In some embodiments, the chamber base 100 has a first sub-chamber and a second sub-chamber, wherein the first sub-chamber is located above the second sub-chamber, the upper surface of the semiconductor workpiece is located in the first sub-chamber, and the lower surface of the semiconductor workpiece is located in the second sub-chamber.

[0062] In some examples, a partition is disposed in the chamber base 100 to separate the chamber base 100 into a first sub-chamber and a second sub-chamber. A portion of the first process gas entering through the side inlet plate 200 and the inlet channel 110 can enter the first sub-chamber, and another portion can enter the second sub-chamber.

[0063] The partition has an opening adapted to the shape of the semiconductor workpiece, and the semiconductor workpiece is located in the opening. The center of the opening is coaxial with the center of the semiconductor workpiece, and the radius of the opening is greater than the radius of the semiconductor workpiece, so as to form an escape space between the opening and the semiconductor workpiece to allow the semiconductor workpiece to rotate. Optionally, the difference between the radius of the opening and the radius of the semiconductor workpiece is greater than or equal to 0.5 mm and less than or equal to 2 mm.

[0064] In other examples, the first process gas entering through the side air inlet plate 200 and the air inlet channel 110 can enter the second sub-chamber; the air inlet side 100a of the chamber base 100 can be connected to a top air inlet device for providing a third process gas to the first sub-chamber.

[0065] The top air inlet device comprises a top air inlet pipeline 310. The top air inlet pipeline 310 has a top air inlet port, an expansion portion and a top air outlet port, wherein the expansion portion is connected between the top air inlet port and the top air outlet port. The top air inlet port corresponds to the middle of the air inlet side 100a of the first sub-chamber.

[0066] The expansion portion is located in the first sub-chamber; the expansion portion gradually expands in a direction away from the top air inlet port. Exemplarily, the top air inlet pipeline 310 can be a symmetrical component; in the horizontal direction, in a direction away from the top air inlet port, the distance between the edge of the expansion section and the symmetry center line of the top air inlet pipeline 310 gradually increases. A top air outlet port is provided at one end of the expansion portion away from the top air inlet port, and the top air outlet port can be arc-shaped to help improve the uniformity of the third process gas flowing to the upper surface of the semiconductor workpiece. Through the above arrangement, it is beneficial to increase the coverage area of ​​the gas discharged from the top air outlet port, so that the third process gas can fully contact the upper surface of the semiconductor workpiece, thereby improving the utilization rate of the third process gas.

[0067] The top air inlet device also includes: a top diffuser plate, which is used to diffuse the third process gas flowing out of the top air outlet port. Exemplarily, the top diffuser plate can be a circular plate body, and the circular plate body is provided with air holes evenly distributed in a dot matrix. In the vertical direction, the top diffuser plate can be located between the top air outlet port and the upper surface of the semiconductor workpiece. In this way, the third process gas flowing out of the top air inlet pipeline 310 is diffused and homogenized by the top diffuser plate, and then flows to the upper surface of the semiconductor workpiece, which is conducive to improving the uniformity of the third process gas flowing to the upper surface of the semiconductor workpiece.

[0068] The reaction chamber further includes: an auxiliary gas supply device connected to the gas inlet side 100a of the chamber base 100, so that the fourth process gas entering from the auxiliary gas supply device can flow to the area near the edge of the semiconductor workpiece, thereby improving the uniformity of the heat treatment effect.

[0069] In some examples, the auxiliary gas supply device includes: an auxiliary gas supply pipeline having an auxiliary gas supply port, an auxiliary gas outlet port and an auxiliary guide portion; the auxiliary gas supply port is used to communicate with the first gas source; the auxiliary gas outlet port is located in the first sub-chamber; the auxiliary guide portion is connected between the auxiliary gas supply pipe and the auxiliary gas outlet port; the auxiliary guide portion is bent. The shape of the auxiliary guide portion can be set according to the positions of the auxiliary gas supply port, the auxiliary gas outlet port and other components in the chamber base 100.

[0070] In order to facilitate the arrangement of other components in the chamber base 100 and improve the compactness of the structure, the auxiliary guide portion can be bent so as to avoid other components. Exemplarily, the auxiliary guide tube includes: a first connecting section connected to the auxiliary gas supply port; a first bending section connected to the first connecting section and bent relative to the first connecting section in a direction away from the semiconductor workpiece; a second connecting section connected to the first bending section and extending in a direction away from the first connecting section; a second bending section connected to the second connecting section and bent in a direction toward the semiconductor workpiece.

[0071] It should be noted that the first process gas, the second process gas, the third process gas and the fourth process gas are only used to distinguish the process gases flowing out of different devices. The specific components of the process gases can be set according to actual needs, and any two of the process gases can be process gases with the same components or process gases with different components.

[0072] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0073] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0074] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0075] In the present disclosure, unless otherwise expressly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0076] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.

[0077] The above specific implementations do not constitute a limitation on the protection scope of the present disclosure. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A reaction chamber, comprising: A chamber base, the chamber base is used to accommodate a semiconductor workpiece; the chamber base has an air inlet side and an air outlet side opposite to each other; the air inlet side of the chamber base is provided with an air inlet channel; A side air inlet plate, wherein the side air inlet plate is connected to the air inlet side of the chamber base; the side air inlet plate is provided with an air inlet hole, wherein the air inlet hole has an inclined section, wherein the inclined section is connected to an end of the air inlet channel which is away from the central axis of the chamber base, and a first preset obtuse angle is formed between the hole wall of the inclined section and the corresponding hole wall of the air inlet channel.

2. The reaction chamber according to claim 1, wherein: Along the direction toward the central axis of the chamber base, the axial direction of the inclined section gradually inclines toward the direction of gravity.

3. The reaction chamber according to claim 1, wherein: The first preset angle is greater than or equal to 150°; the preset angle is less than or equal to 165°.

4. The reaction chamber according to claim 1, wherein: There are multiple air inlet holes, and the multiple air inlet holes are spaced apart and evenly distributed.

5. The reaction chamber according to claim 1, wherein: The air inlet passage has a first section and a second section, the first section is located between the inclined section and the second section; the hole wall of the first section is straight, and at least part of the hole wall of the second section is inclined; A second preset angle of an obtuse angle is formed between the hole wall of the first section and the inclined portion of the hole wall of the second section.

6. The reaction chamber according to claim 5, wherein: The second section is tapered.

7. The reaction chamber according to claim 5, wherein: The second preset angle is greater than or equal to the first preset angle.

8. The reaction chamber according to claim 5, wherein: The second preset angle is greater than or equal to 165°; the preset angle is less than or equal to 175°.

9. The reaction chamber according to claim 1, further comprising: A side diffuser plate is located on the inner side of the air inlet channel toward the central axis of the chamber base, and is used to diffuse the first process gas flowing out of the air inlet channel.

10. The reaction chamber according to claim 1, further comprising: An air flotation device, the air flotation device is used to provide a force to lift the semiconductor workpiece; Among them, the air flotation device has an air inlet pipeline, and a pipeline through hole is provided on the air inlet side of the chamber base, and the air inlet pipeline is passed through the pipeline through hole; there is a gap between the air inlet pipeline and the hole wall of the pipeline through hole; the air inlet channel includes the gap.

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