Tunable laser device for realizing high-frequency transmission and wavelength locking

Abstract

The invention relates to the technical field of laser communication, and provides a tunable laser device for realizing high-frequency transmission and wavelength locking, which comprises a shell, a substrate positioned in the shell, a tunable wavelength laser fixedly arranged on the substrate, a first isolator, a second isolator, a modulator, a spectroscope, a first light detector and an auxiliary bonding base station, the shell is provided with a lead wire bonding area, the auxiliary bonding base station is higher than the substrate, the auxiliary bonding base station is provided with an electric signal modulation lead wire, and the control end of the modulator is connected with the lead wire bonding area through the electric signal modulation lead wire. The method has the advantages that the auxiliary bonding base station is additionally arranged for controlling lead bonding, the modulator is connected to the lead bonding area through the electric signal modulation lead located on the auxiliary bonding base station, the requirement for higher transmission rate is met, meanwhile, the wavelength is adjustable, lead bonding is controlled, and modulation stability is improved.

Description

Technical Field

[0001] The invention relates to the technical field of laser communication, and in particular to a tunable laser device for realizing high-frequency transmission and wavelength locking. Background Art

[0002] 10Gbps / 25Gbps tunable SFP transceiver module, as a miniaturized pluggable optical module, has application markets covering 5G wireless and data center DCI interconnection, metropolitan area network and local area network. SFP is a modulator that converts electrical signals into optical signals. The optical signal from the modulator is introduced into the optical fiber for laser communication.

[0003] The higher the transmission rate, the stricter the control over the link impedance matching and wire bonding details of the modulator is required. Otherwise, the electrical signal leads between the modulator and the wire bonding area will easily cause reflection points during high-frequency signal transmission, thereby reducing the transmission rate and distance, degrading high-frequency performance, and causing poor modulation stability.

[0004] The modulator combined with the tunable wavelength laser of the vernier effect can be flexibly configured and used in different laser communication protocols and application scenarios, thereby greatly improving its application range and practicality.

[0005] Therefore, it is necessary to develop a tunable laser device that can achieve high-frequency transmission and wavelength locking to meet transmission rates of 10Gbps / 25Gbps or even higher, while also having adjustable wavelength, controlling wire bonding, and improving modulation stability. Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide a tunable laser device that can realize high-frequency transmission and wavelength locking.

[0007] The present invention is achieved in that:

[0008] A tunable laser device for realizing high frequency transmission and wavelength locking, comprising:

[0009] A housing, a substrate located inside the housing, and a tunable wavelength laser, a first isolator, a second isolator, a modulator, a beam splitter, a first light detector, and an auxiliary bonding base fixedly arranged on the substrate;

[0010] The light emitted from the tunable wavelength laser first passes through the first isolator and the modulator in sequence, and then enters the beam splitter. The first split light emitted from the beam splitter enters the first light detector. The second split light emitted from the beam splitter passes through the second isolator and is finally emitted outward from the light outlet of the housing.

[0011] The housing is provided with a wire bonding area, the auxiliary bonding base is higher than the substrate, the auxiliary bonding base is provided with an electrical signal modulation lead, and the control end of the modulator is connected to the wire bonding area through the electrical signal modulation lead.

[0012] Furthermore, the control end of the modulator is divided into a DC signal control end and an RF signal control end, the electrical signal modulation lead is divided into a first electrical signal modulation lead and a second electrical signal modulation lead, and the DC signal control end and the RF signal control end are respectively connected to the wire bonding area through the first electrical signal modulation lead and the second electrical signal modulation lead.

[0013] Furthermore, the tunable wavelength laser includes an SLD chip, an FP filter and a first reflector, the light emitted from the SLD chip passes through the FP filter and enters the first reflector, and the light reflected from the first reflector passes through the FP filter and the SLD chip in sequence and enters the modulator.

[0014] Further, the FP filter includes a 310 GHz silicon etalon and a 300 GHz silicon etalon arranged at intervals, the left and right surfaces of the 310 GHz silicon etalon and the left and right surfaces of the 300 GHz silicon etalon are coated with semi-transparent and semi-reflective films, the 310 GHz silicon etalon is close to the SLD chip, and the 300 GHz silicon etalon is close to the first reflector;

[0015] Or the FP filter includes a 208 GHz silicon etalon and a 200 GHz quartz etalon arranged at intervals, the left and right surfaces of the 208 GHz silicon etalon and the left and right surfaces of the 200 GHz quartz etalon are coated with semi-transparent and semi-reflective films, the 208 GHz silicon etalon is close to the SLD chip, and the 200 GHz quartz etalon is close to the first reflector;

[0016] Alternatively, the FP filter includes a 208 GHz silicon etalon and a 200 GHz quartz etalon that are spaced apart, the left and right surfaces of the 208 GHz silicon etalon and the left and right surfaces of the 200 GHz quartz etalon are coated with a semi-transparent and semi-reflective film, the 208 GHz silicon etalon is close to the SLD chip, and the first reflector is canceled, and the right side of the 200 GHz quartz etalon is used as a reflector.

[0017] Furthermore, the modulator is a FP laser chip or a SOA chip.

[0018] Furthermore, it also includes a second reflector, a third reflector, an etalon, and a second light detector fixedly arranged on the substrate, the light emitted from the tunable wavelength laser first passes through the first isolator, the second reflector, the modulator, and the third reflector in sequence, and then enters the etalon, the light reflected from the etalon enters the second light detector, and the light transmitted from the etalon enters the spectroscope;

[0019] The optical path among the first isolator, the second reflector, the modulator, the third reflector and the etalon is U-shaped, and the modulator is adjacent to the wire bonding area.

[0020] Furthermore, it also includes a refractive prism reflector, which is arranged between the second isolator and the light outlet of the shell.

[0021] Furthermore, the light outlet of the shell is divided into a left light outlet and a right light outlet, and the wire bonding area is located at the front side or the rear side of the shell.

[0022] Furthermore, it also includes a light splitting component and a light path guiding component, wherein the light splitting component is movably connected to the substrate, and the light path guiding component is fixedly connected to the substrate;

[0023] When the light splitting component moves between the second isolator and the left light outlet, the light emitted from the second isolator is split into two light paths through the light splitting component, one of which is emitted outward from the left light outlet, and the other is emitted outward from the right light outlet through the light path guiding component;

[0024] When the light splitting component moves away from between the second isolator and the left light outlet, the light emitted from the second isolator is emitted out of the left light outlet.

[0025] Compared with the background technology, the advantages and beneficial effects of the present invention are:

[0026] 1. An auxiliary bonding base is added to control wire bonding. The modulator is connected to the wire bonding area through the electrical signal modulation lead located on the auxiliary bonding base. There is a height difference between the auxiliary bonding base and the substrate, which reduces the interference of other electrical signal leads of the substrate on the electrical signal modulation lead of the auxiliary bonding base, which is beneficial to the transmission of high-frequency signals at the control end of the modulator and makes it easier to obtain a bandwidth with a high transmission rate. The present invention meets the transmission rate of 10Gbps / 25Gbps or even higher, and the wavelength is adjustable, the wire bonding is controlled, and the modulation stability is improved.

[0027] 2. A wavelength locking component consisting of an etalon, a spectroscope, a first light detector, and a second light detector is helpful to stabilize the output wavelength; a U-shaped optical path is set, and the modulator is adjacent to the wire bonding area. Since the distance between the modulator and the wire bonding area is reduced, the control end of the modulator transmits the signal through a shorter electrical signal modulation wire, which is conducive to controlling the wire bonding, avoiding the occurrence of reflection points during high-frequency signal transmission, and ensuring the transmission rate.

[0028] 3. The wire bonding area is arranged on the front side or the rear side of the shell, and the PAD structure is extended on the side of the shell, so that active components such as the adjustable wavelength laser, the modulator, the first light detector and the second light detector are directly wired to the PAD structure of the shell through the wire bonding area, which is helpful to design a left and right double-sided light output structure and expand the application range of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The present invention will be further described below in conjunction with embodiments with reference to the accompanying drawings.

[0030] Figure 1 It is a schematic structural diagram of a tunable laser device for realizing high-frequency transmission and wavelength locking according to the first embodiment of the present invention.

[0031] Figure 2 Schematic diagram of the positions of the auxiliary bonding platform and the substrate in the first embodiment of the present invention.

[0032] Figure 3 The structure of the FP filter in the first embodiment of the present invention is shown in FIG. Figure 1 .

[0033] Figure 4 The structure of the FP filter in the first embodiment of the present invention is shown in FIG. Figure 2 .

[0034] Figure 5 The structure of the FP filter in the first embodiment of the present invention is shown in FIG. Figure 3 .

[0035] Figure 6 It is a schematic structural diagram of a tunable laser device for realizing high-frequency transmission and wavelength locking according to a second embodiment of the present invention.

[0036] Figure 7 It is a schematic diagram of the position of the ray striking line in the second embodiment of the present invention.

[0037] Figure 8 It is a schematic structural diagram of a tunable laser device for realizing high-frequency transmission and wavelength locking according to the third embodiment of the present invention.

[0038] Fig. 9 It is a schematic diagram of double-sided light output in the third embodiment of the present invention.

[0039] Figure numerals: housing 1; wire bonding area 11; left light outlet 12; right light outlet 13; substrate 2; tunable wavelength laser 21; SLD chip 211; FP filter 212; 310GHz silicon etalon 2121; 300GHz silicon etalon 2122; 208GHz silicon etalon 2123; 200GHz quartz etalon 2124; first reflector 213; first isolator 22; second isolator 23; modulator 24; spectrometer 25; first light detector 26; second reflector 27; third reflector 28; etalon 29; second light detector 210; refractive prism reflector 220; auxiliary bonding base 3; electrical signal modulation lead 31; RF bonding wire 32; spectrometer component 4; optical path guiding component 41. DETAILED DESCRIPTION

[0040] See also Figure 1 and Figure 5 , the first embodiment of the present invention.

[0041] A tunable laser device for realizing high frequency transmission and wavelength locking, comprising:

[0042] A housing 1, a substrate 2 located inside the housing 1, a tunable wavelength laser 21, a first isolator 22, a second isolator 23, a modulator 24, a beam splitter 25, a first light detector 26 and an auxiliary bonding base 3 fixedly arranged on the substrate 2;

[0043] The light emitted from the tunable wavelength laser 21 first passes through the first isolator 22 and the modulator 24 in sequence, and then enters the beam splitter 25. The first split light emitted from the beam splitter 25 enters the first light detector 26. The second split light emitted from the beam splitter 25 passes through the second isolator 23 and is finally emitted outward from the light outlet of the housing 1.

[0044] The housing 1 is provided with a wire bonding area 11 . The auxiliary bonding platform 3 is higher than the substrate 2 . The auxiliary bonding platform 3 is provided with an electrical signal modulation lead 31 . The control end of the modulator 24 is connected to the wire bonding area 11 via the electrical signal modulation lead 31 .

[0045] The beneficial effect of the above technical solution is that an auxiliary bonding base 3 is added to control the wire bonding, and the modulator 24 is connected to the wire bonding area 11 through the electrical signal modulation lead 31 located on the auxiliary bonding base 3. There is a height difference between the auxiliary bonding base 3 and the substrate 2, which reduces the interference of other electrical signal leads of the substrate 2 on the electrical signal modulation lead 31 of the auxiliary bonding base 3, which is beneficial to the transmission of high-frequency signals by the control end of the modulator 24, and it is easier to obtain a bandwidth with a high transmission rate; the present invention meets 10Gbps / 25Gbps or even higher transmission rates, and at the same time, the wavelength is adjustable, the wire bonding is controlled, and the modulation stability is improved.

[0046] The auxiliary bonding base 3 is set up to reduce the loop / gap from the modulator 24 to the wire bonding area 11, eliminate the parasitic effect of the gold wire bonding, and avoid the emission of electromagnetic waves in the atmosphere; at the same time, the characteristic impedance of the gold wire bonding and the microstrip line is equal or conjugated (differential signal 50Ω impedance matching), so that minimum reflection is formed at the microstrip line and the gold wire bonding, reducing power loss.

[0047] The control end of the modulator 24 is divided into a DC signal control end and a RF signal control end, the electrical signal modulation lead 31 is divided into a first electrical signal modulation lead and a second electrical signal modulation lead, and the DC signal control end and the RF signal control end are connected to the wire bonding area through the first electrical signal modulation lead and the second electrical signal modulation lead respectively.

[0048] The DC driving module outside the shell 1 provides a bias current to the modulator 24 through the first electrical signal modulation lead 31, thereby providing a stable operating point for the modulator 24; the RF driving module outside the shell 1 provides a pulse signal to the modulator 24 through the second electrical signal modulation lead 31, thereby performing a modulation function.

[0049] The tunable wavelength laser 21 includes an SLD chip 211, an FP filter 212 and a first reflector 213. The light emitted from the SLD chip 211 passes through the FP filter 212 and enters the first reflector 213. The light reflected from the first reflector 213 passes through the FP filter 212 and the SLD chip 211 in sequence and enters the modulator 24.

[0050] The SLD chip 211 is a superluminescent diode. The FP filter 212 is a Fabry-Perot filter. The SLD chip 211 emits a wide spectrum light source, which is reflected back and forth by the first reflector 213 and oscillates to form a multi-mode laser; the FP filter 212 is composed of two filters with different wavelength spacings. According to the vernier effect, one of the filters is thermally adjusted or both filters are thermally adjusted at the same time, and the comb teeth are moved to the other filter for overlap to finally complete the wave selection. The single longitudinal mode laser after wave selection is injected into the modulator 24 to achieve wavelength locking and power injection amplification.

[0051] The FP filter has the following three implementation methods: (1) Combining Figure 3 The FP filter includes a 310GHz silicon etalon and a 300GHz silicon etalon arranged at intervals. The left and right sides of the 310GHz silicon etalon and the left and right sides of the 300GHz silicon etalon are coated with semi-transparent and semi-reflective films. The 310GHz silicon etalon is close to the SLD chip, and the 300GHz silicon etalon is close to the first reflector. Usually, the reflectivity of the semi-transparent and semi-reflective film is 85%. 9.3THz tuning range. Both the 310GHz silicon etalon and the 300GHz silicon etalon are wavelength-adjustable etalons. The wavelength is moved by heating the heating plate of the silicon etalon. This is due to the temperature drift determined by the material properties of the silicon etalon itself (thermal expansion coefficient, thermo-optic coefficient).

[0052] (2) Combination Figure 4 The FP filter includes a 208 GHz silicon etalon and a 200 GHz quartz etalon arranged at intervals. The left and right sides of the 208 GHz silicon etalon and the left and right sides of the 200 GHz quartz etalon are coated with semi-transparent and semi-reflective films. The 208 GHz silicon etalon is close to the SLD chip, and the 200 GHz quartz etalon is close to the first reflector. Usually, the reflectivity of the semi-transparent and semi-reflective film is 85%. 200 GHz wavelength interval tuning is achieved. The 208 GHz silicon etalon is a wavelength-adjustable etalon, and the 200 GHz quartz etalon is a wavelength-fixed etalon; the quartz etalon is not sensitive to temperature, and the wavelength is not affected by temperature.

[0053] (3) Combination Figure 5 The FP filter includes a 208 GHz silicon etalon and a 200 GHz quartz etalon arranged at intervals. The left and right sides of the 208 GHz silicon etalon and the left and right sides of the 200 GHz quartz etalon are coated with semi-transparent and semi-reflective films. The 208 GHz silicon etalon is close to the SLD chip, and the first reflector is removed. Usually, the reflectivity of the semi-transparent and semi-reflective film is 85%. The right side of the 200 GHz quartz etalon is used as a reflector to form a resonant cavity with the SLD chip. The reflection spectrum of the 200 GHz quartz etalon and the specific transmission spectrum of the 208 GHz silicon standard are used to achieve 200 GHz wavelength interval tuning.

[0054] The three implementation methods of the above FP filter can achieve wavelength tunability without a phaser.

[0055] The modulator 24 is a FP laser chip or a SOA chip.

[0056] The device of the first embodiment is based on BOX packaging application, and the optical path in the housing 1 is a linear optical path; since the modulator 24 needs to apply radio frequency signals (RF) and direct current signals (DC), the control end of the modulator 24 is wired to the wire bonding area 11 of the housing 1 by setting an auxiliary bonding base 3. High-frequency transmission is met. Wire bonding is a method of assembling a chip on a PCB, which uses metal wires for connection.

[0057] See also Figure 6 and Figure 7 , the second embodiment of the present invention.

[0058] A tunable laser device for realizing high frequency transmission and wavelength locking, comprising:

[0059] A housing 1, a substrate 2 located inside the housing 1, a tunable wavelength laser 21, a first isolator 22, a second isolator 23, a modulator 24, a beam splitter 25, a first light detector 26 and an auxiliary bonding base 3 fixedly arranged on the substrate 2;

[0060] It also includes a second reflector 27, a third reflector 28, an etalon 29 and a second light detector 210 fixedly arranged on the substrate 2. The light emitted from the tunable wavelength laser 21 first passes through the first isolator 22, the second reflector 27, the modulator 24, and the third reflector 28 in sequence, and then enters the etalon 29. The light reflected from the etalon 29 enters the second light detector 210, and the light transmitted from the etalon 29 enters the spectroscope 25.

[0061] The first split light emitted from the beam splitter 25 enters the first light detector 26, and the second split light emitted from the beam splitter 25 passes through the second isolator 23 and finally emits outward from the light outlet of the housing 1;

[0062] The optical path among the first isolator 22 , the second reflector 27 , the modulator 24 , the third reflector 28 , and the etalon 29 is U-shaped, and the modulator 24 is adjacent to the wire bonding area 11 .

[0063] The beneficial effect of the above technical solution is that the wavelength locking component composed of the standard device 29, the spectroscope 25, the first light detector 26, and the second light detector 210 is helpful to stabilize the output wavelength; a U-shaped optical path is set, and the modulator 24 is adjacent to the wire bonding area 11. Since the distance between the modulator 24 and the wire bonding area 11 is reduced, the control end of the modulator 24 transmits the signal through a shorter electrical signal modulation lead 31, which is conducive to controlling the wire bonding, avoiding the occurrence of reflection points during high-frequency signal transmission, and ensuring the transmission rate.

[0064] The control end of the modulator 24 and the wire bonding area 11 can match impedance by bonding wires.

[0065] It also includes a refracting prism reflector 220, which is arranged between the second isolator 23 and the light outlet of the housing 1. The refracting prism reflector 220 is used to correct the optical path deviation between the second isolator 23 and the light outlet of the housing 1 after the U-shaped optical path is set.

[0066] The second reflecting mirror 27 and the third reflecting mirror 28 are both right-angle prisms.

[0067] The device of the second embodiment makes full use of the internal space of the housing 1, and folds the optical path into 180° for propagation through two right-angle prisms, which greatly facilitates the impedance matching of the RF circuit. The standard of the RF bonding wire 32 between the modulator 24 and the wire bonding area 11 is more controllable, and the standard of the RF bonding wire 32 requires loop≤50um, overlap≤50um, and gap≤100um. The wavelength lock component is introduced to monitor the wavelength deviation of the light through the first light detector 26 and the second light detector 210. Specifically, the standard power is obtained from the first light detector 26, and the reference power is obtained from the second light detector 210. The ratio of the standard power to the reference power can reflect the direction and size of the wavelength deviation, which is fed back to the adjustable wavelength laser 21 to achieve wavelength stability control and output.

[0068] See also Figure 8 and Fig. 9 , the third embodiment of the present invention.

[0069] A tunable laser device for realizing high frequency transmission and wavelength locking, comprising:

[0070] A housing 1, a substrate 2 located inside the housing 1, a tunable wavelength laser 21, a first isolator 22, a second isolator 23, a modulator 24, a beam splitter 25, a first light detector 26 and an auxiliary bonding base 3 fixedly arranged on the substrate 2;

[0071] The light emitted from the tunable wavelength laser 21 first passes through the first isolator 22 and the modulator 24 in sequence, and then enters the beam splitter 25. The first split light emitted from the beam splitter 25 enters the first light detector 26. The second split light emitted from the beam splitter 25 passes through the second isolator 23 and is finally emitted outward from the light outlet of the housing 1.

[0072] The housing 1 is provided with a wire bonding area 11 . The auxiliary bonding platform 3 is higher than the substrate 2 . The auxiliary bonding platform 3 is provided with an electrical signal modulation lead 31 . The control end of the modulator 24 is connected to the wire bonding area 11 via the electrical signal modulation lead 31 .

[0073] The light outlet of the housing 1 is divided into a left light outlet 12 and a right light outlet 13 , and the wire bonding area 11 is located at the front side or the rear side of the substrate 2 .

[0074] The beneficial effect of the above technical solution is that the wire bonding area 11 is set on the front side or the rear side of the shell 1, and the PAD structure is extended on the side of the shell 1, so that active components such as the adjustable wavelength laser 21, the modulator 24, the first light detector 26 and the second light detector 210 are directly wired to the PAD structure of the shell 1 through the wire bonding area 11, which helps to design a structure with double-sided light output on the left and right sides, thereby expanding the application range of the device.

[0075] The control end of the modulator 24 and the wire bonding area 11 can match impedance by bonding wires.

[0076] It also includes a light splitting component 4 and a light path guiding component 41, wherein the light splitting component 4 is movably connected to the substrate 2, and the light path guiding component 41 is fixedly connected to the substrate 2;

[0077] When the light splitting component 4 moves between the second isolator 23 and the left light outlet 12, the light emitted from the second isolator 23 is split into two light beams through the light splitting component 4, one of which is emitted outward from the left light outlet 12, and the other is emitted outward from the right light outlet 13 through the light path guiding component 41;

[0078] When the light splitting component 4 leaves between the second isolator 23 and the left light outlet 12 , the light emitted from the second isolator 23 is emitted from the left light outlet 12 .

[0079] The device of the third embodiment modifies the BOX packaging method and extends a PAD structure on the side of the housing 1. The active components are directly wired to the PAD structure through the wire bonding area 11. By changing the position of the light splitting component 4, the device can achieve single-sided light output and double-sided light output.

[0080] Although the specific implementation modes of the present invention are described above, those skilled in the art should understand that the specific implementation modes described are only illustrative and are not intended to limit the scope of the present invention. Equivalent modifications and changes made by those skilled in the art in accordance with the spirit of the present invention should be included in the scope of protection of the claims of the present invention.

Claims

1. A tunable laser device for realizing high frequency transmission and wavelength locking, characterized in that: include: A housing, a substrate located inside the housing, and a tunable wavelength laser, a first isolator, a second isolator, a modulator, a beam splitter, a first light detector, and an auxiliary bonding base fixedly arranged on the substrate; The light emitted from the tunable wavelength laser first passes through the first isolator and the modulator in sequence, and then enters the beam splitter. The first split light emitted from the beam splitter enters the first light detector. The second split light emitted from the beam splitter passes through the second isolator and is finally emitted outward from the light outlet of the housing. The housing is provided with a wire bonding area, the auxiliary bonding base is higher than the substrate, the auxiliary bonding base is provided with an electrical signal modulation lead, and the control end of the modulator is connected to the wire bonding area through the electrical signal modulation lead.

2. A tunable laser device for realizing high frequency transmission and wavelength locking according to claim 1, characterized in that: The control end of the modulator is divided into a DC signal control end and a RF signal control end, the electrical signal modulation lead is divided into a first electrical signal modulation lead and a second electrical signal modulation lead, and the DC signal control end and the RF signal control end are connected to the wire bonding area through the first electrical signal modulation lead and the second electrical signal modulation lead respectively.

3. A tunable laser device for realizing high frequency transmission and wavelength locking according to claim 1, characterized in that: The tunable wavelength laser comprises an SLD chip, an FP filter and a first reflector. The light emitted from the SLD chip passes through the FP filter and enters the first reflector. The light reflected from the first reflector passes through the FP filter and the SLD chip in sequence and enters the modulator.

4. A tunable laser device for realizing high frequency transmission and wavelength locking according to claim 1, characterized in that: The FP filter comprises a 310 GHz silicon etalon and a 300 GHz silicon etalon arranged at intervals, the left and right sides of the 310 GHz silicon etalon and the left and right sides of the 300 GHz silicon etalon are coated with semi-transparent and semi-reflective films, the 310 GHz silicon etalon is close to the SLD chip, and the 300 GHz silicon etalon is close to the first reflector; Or the FP filter includes a 208 GHz silicon etalon and a 200 GHz quartz etalon arranged at intervals, the left and right surfaces of the 208 GHz silicon etalon and the left and right surfaces of the 200 GHz quartz etalon are coated with semi-transparent and semi-reflective films, the 208 GHz silicon etalon is close to the SLD chip, and the 200 GHz quartz etalon is close to the first reflector; Alternatively, the FP filter includes a 208 GHz silicon etalon and a 200 GHz quartz etalon that are spaced apart, the left and right surfaces of the 208 GHz silicon etalon and the left and right surfaces of the 200 GHz quartz etalon are coated with a semi-transparent and semi-reflective film, the 208 GHz silicon etalon is close to the SLD chip, and the first reflector is canceled, and the right side of the 200 GHz quartz etalon is used as a reflector.

5. A tunable laser device for realizing high frequency transmission and wavelength locking according to claim 1, characterized in that: The modulator is a FP laser chip or a SOA chip.

6. A tunable laser device for realizing high frequency transmission and wavelength locking according to claim 1, characterized in that: It also includes a second reflector, a third reflector, an etalon, and a second light detector fixedly arranged on the substrate, wherein the light emitted from the tunable wavelength laser first passes through the first isolator, the second reflector, the modulator, and the third reflector in sequence, and then enters the etalon, the light reflected from the etalon enters the second light detector, and the light transmitted from the etalon enters the spectroscope; The optical path among the first isolator, the second reflector, the modulator, the third reflector and the etalon is U-shaped, and the modulator is adjacent to the wire bonding area.

7. A tunable laser device for realizing high frequency transmission and wavelength locking according to claim 6, characterized in that: It also includes a refracting prism reflector, which is arranged between the second isolator and the light outlet of the housing.

8. The tunable laser device for realizing high frequency transmission and wavelength locking according to claim 1, characterized in that: The light outlet of the housing is divided into a left light outlet and a right light outlet, and the wire bonding area is located at the front side or the rear side of the housing.

9. A tunable laser device for realizing high frequency transmission and wavelength locking according to claim 8, characterized in that: It also includes a light splitting component and a light path guiding component, wherein the light splitting component is movably connected to the substrate, and the light path guiding component is fixedly connected to the substrate; When the light splitting component moves between the second isolator and the left light outlet, the light emitted from the second isolator is split into two light paths through the light splitting component, one of which is emitted outward from the left light outlet, and the other is emitted outward from the right light outlet through the light path guiding component; When the light splitting component moves away from between the second isolator and the left light outlet, the light emitted from the second isolator is emitted out of the left light outlet.

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