Heating disc and manufacturing method thereof, process chamber and processing equipment of semiconductor device

Abstract

The invention provides a heating disc and a manufacturing method thereof, a process chamber and processing equipment of a semiconductor device. The manufacturing method of the heating plate comprises the following steps: constructing a structural model of the heating plate, and defining material characteristics of all components in the structural model; performing simulation of rated heating power to obtain surface temperature distribution of the ceramic upper cover component; according to the surface temperature distribution of the ceramic upper cover component, the heating wire structure of the heating wire sub-component of at least one low-temperature partition is adjusted until a structure model meeting the temperature distribution uniformity requirement is obtained; and according to the structure model meeting the temperature distribution uniformity requirement, a plurality of heating wire sub-components corresponding to the heating wire structure are sintered to a plurality of partitions between the ceramic substrate component and the ceramic upper cover component respectively, so that the heating disc is manufactured.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a manufacturing method of a heating disk, a heating disk, a process chamber, and a processing device for a semiconductor device. Background Art

[0002] The heating plate in semiconductor manufacturing has an extra cavity in its cavity space compared to the cylindrical chamber due to the existence of the film transfer port structure at the connection with the transfer cavity, which may cause the wafer surface temperature in this direction to be lower than other positions.

[0003] Single-zone and dual-zone heating plates in the prior art usually place printed electrodes between ceramic and metal substrates to adjust the temperature of the local area through the printed electrodes. However, on the one hand, the printed electrodes are usually placed between metal and ceramic, and the bonding parts are bonded with glue that has a low tolerance temperature, so it is impossible to control the electrodes for uniformity adjustment while the heating plate is used at high temperatures. On the other hand, it is even more impossible to uniformly heat the heating plate of the wafer under uneven ambient temperatures to reduce the cost and difficulty of online zoning control.

[0004] In order to overcome the above-mentioned defects of the prior art, the art is in urgent need of a heating plate technology for adjusting the temperature at the film transfer port of the heating plate, so as to evenly heat the heating plate under uneven and high temperature ambient temperature, so as to reduce the cost and difficulty of online zoning control. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects in the prior art, the present invention provides a method for manufacturing a heating plate, a heating plate, a process chamber, and a processing equipment for a semiconductor device, which are used to adjust the temperature at the film transfer port of the heating plate, so as to uniformly heat the heating plate under an uneven and high temperature ambient temperature, so as to reduce the cost and difficulty of online zoning control.

[0007] Specifically, the manufacturing method of the heating plate provided in accordance with the first aspect of the present invention comprises the following steps: constructing a structural model of the heating plate and defining the material properties of each component therein, wherein the structural model comprises a ceramic base component, a heating wire component and a ceramic upper cover component, the heating wire component is located between the ceramic base component and the ceramic upper cover component, and is divided into a plurality of heating wire sub-components according to a plurality of preset partitions; according to the installation position of the heating plate in the process chamber, setting the ambient temperature parameters of each of the heating wire sub-components, and performing a simulation of the rated heating power to obtain the surface temperature distribution of the ceramic upper cover component; according to the surface temperature distribution of the ceramic upper cover component, adjusting the heating wire structure of the heating wire sub-component of at least one low-temperature partition until a structural model that meets the temperature distribution uniformity requirement is obtained; and according to the structural model that meets the temperature distribution uniformity requirement, sintering a plurality of heating wire sub-components corresponding to the heating wire structure to the plurality of partitions between the ceramic base component and the ceramic upper cover component, respectively, to manufacture the heating plate.

[0008] Furthermore, in some embodiments of the present invention, the step of setting the ambient temperature parameters of each of the heating wire sub-components according to the installation position of the heating disk in the process chamber includes: simulating the temperature distribution inside the process chamber according to the target process temperature of the heating disk, the preset ambient temperature, the first material and the first thickness of the process chamber side wall, and the second material and the second thickness of the process chamber film transfer gate valve to determine the temperatures of multiple positions inside the process chamber; and separately setting the ambient temperature parameters of each of the heating wire sub-components according to the installation position of each of the partitions of the heating disk in the process chamber.

[0009] Furthermore, in some embodiments of the present invention, the step of adjusting the heating wire structure of at least one low-temperature partitioned heating wire sub-component according to the surface temperature distribution of the ceramic upper cover component includes: uniformly reducing the spacing between each of the heating wires in the heating wire sub-component of the low-temperature partition to increase the distribution density of the heating wires in the heating wire sub-component.

[0010] In addition, the heating plate provided according to the second aspect of the present invention includes a ceramic base component, a heating wire component and a ceramic upper cover component, and is characterized in that the heating wire component is located between the ceramic base component and the ceramic upper cover component, and is divided into a plurality of heating wire sub-components according to a plurality of preset partitions, wherein the heating wire distribution density of the first heating wire sub-component of at least one cold zone in the plurality of the partitions is greater than the heating wire distribution density of the second heating wire sub-component of at least one hot zone in the plurality of the partitions.

[0011] Furthermore, in some embodiments of the present invention, the heating plate is installed in a process chamber, wherein the distance from the at least one cold zone to a film transfer gate valve of the process chamber is smaller than the distance from the at least one hot zone to the film transfer gate valve.

[0012] Furthermore, in some embodiments of the present invention, the heating plate also includes: a plurality of temperature sensors for collecting the actual temperature of each of the partitions; a plurality of power supply units, respectively connected to each of the heating wire components; and a controller for adjusting the heating power output by the corresponding power supply unit to the corresponding heating wire component according to the actual temperature collected by the plurality of temperature sensors, so as to compensate for the uniformity of the temperature distribution at multiple positions on the surface of the ceramic upper cover component.

[0013] In addition, the process chamber provided according to the third aspect of the present invention includes: a film transfer port, which is connected to the transfer chamber of the semiconductor device processing equipment and is provided with a film transfer gate valve that blocks the process chamber and the transfer chamber; and at least one first heating disk, which is selected as the heating disk described in any one of the second aspects of the present invention, and the heating wire distribution density of the first heating wire sub-component in at least one cold zone close to the film transfer gate valve is greater than the heating wire distribution density of the second heating wire sub-component in at least one hot zone away from the film transfer gate valve.

[0014] Furthermore, in some embodiments of the present invention, the process chamber also includes: at least one second heating disk, wherein the distance from the second heating disk to the film transfer gate valve is greater than the distance from the first heating disk to the film transfer gate valve, and the heating wire distribution density of the heating wire component of the second heating disk at each position thereof is the same.

[0015] Furthermore, in some embodiments of the present invention, the process chamber includes two of the first heating disks and four of the second heating disks, wherein each of the heating disks is arranged around a fixed terminal in the center of the process chamber, one side of the two first heating disks is adjacent to the film transfer port, and the four second heating disks are located on the other side opposite to the two first heating disks.

[0016] In addition, the processing equipment of the semiconductor device provided according to the fourth aspect of the present invention includes: a front-end module, which is used to obtain wafers to be processed from the outside world and output the processed wafers to the outside world; a load lock cavity, which connects the front-end module and the rear-end transmission cavity, and is used for converting the atmospheric environment and the vacuum environment; the transmission cavity, which connects the load lock cavity and at least one process chamber as described in any one of the third aspects of the present invention, so as to dispatch and recycle the wafers; and at least one of the process chambers, which is used to perform a processing process on the wafers therein. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic flow chart of a method for manufacturing a heating plate according to some embodiments of the present invention is shown.

[0019] Figure 2 A schematic structural diagram of a heating plate provided according to some embodiments of the present invention is shown.

[0020] Figure 3 A schematic structural diagram of heating plate partitions provided according to some embodiments of the present invention is shown.

[0021] Figure 4A A schematic diagram of the surface temperature distribution simulation of an existing heating plate is shown.

[0022] Figure 4B A schematic diagram of surface temperature distribution simulation of a heating plate provided according to some embodiments of the present invention is shown.

[0023] Figure 5 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown.

[0024] Reference numerals:

[0025] 10 Heating plate

[0026] 11 Ceramic base components

[0027] 12 Heating wire component

[0028] 13 Ceramic upper cover component

[0029] 20 Cold Zone

[0030] 30 Hot Zones

[0031] 40 Film transmission port DETAILED DESCRIPTION

[0032] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0033] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0035] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0036] The heating plate in semiconductor manufacturing has an extra cavity in its cavity space compared to the cylindrical chamber due to the existence of the film transfer port structure at the connection with the transfer cavity, which may cause the wafer surface temperature in this direction to be lower than other positions.

[0037] In the prior art, single-zone and dual-zone heating plates usually place printed electrodes between ceramic and metal substrates to adjust the temperature of the local area. However, metal and ceramic need to be bonded with glue, which has a low temperature tolerance, so it is impossible to control the electrode for uniformity adjustment when the heating plate is used at high temperature.

[0038] In order to overcome the above-mentioned defects in the prior art, the present invention provides a method for manufacturing a heating plate, a heating plate, a process chamber, and a processing equipment for a semiconductor device, which are used to adjust the temperature at the film transfer port of the heating plate, so as to uniformly heat the heating plate under an uneven and high temperature ambient temperature, so as to reduce the cost and difficulty of online zoning control.

[0039] In some non-limiting embodiments, the method for manufacturing the heating disk provided in the first aspect of the present invention can be implemented based on the heating disk provided in the second aspect of the present invention. The heating disk provided in the second aspect of the present invention can be configured in the process chamber provided in the third aspect of the present invention. The process chamber provided in the third aspect of the present invention can be configured in the processing equipment of the semiconductor device provided in the fourth aspect of the present invention.

[0040] The following will describe the manufacturing principle of the above-mentioned heating plate in combination with some embodiments of the heating plate manufacturing method. Those skilled in the art will understand that these embodiments of the heating plate manufacturing method are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all manufacturing methods of the heating plate. Similarly, the heating plate is also only some non-limiting implementation methods provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these heating plate manufacturing methods.

[0041] Please provide reference Figure 1 , Figure 1 A schematic flow chart of a method for manufacturing a heating plate according to some embodiments of the present invention is shown.

[0042] like Figure 1 As shown, in the manufacturing method of the heating plate 10, the structural model of the heating plate 10 can be first constructed, and the material properties of each component therein can be defined, wherein the structural model includes a ceramic base component 11, a heating wire component 12, and a ceramic upper cover component 13, wherein the heating wire component 12 is located between the ceramic base component 11 and the ceramic upper cover component 13, and is divided into a plurality of heating wire sub-components according to a plurality of preset partitions. Here, the heating wire needs to avoid the fixed terminal of the central area, and the initial structural model needs to be constructed in a manner of uniformly designing the heating wire structure of each heating wire sub-component.

[0043] Afterwards, according to the installation position of the heating disk 10 in the process chamber, the ambient temperature parameters of each heating wire component are set, and the rated heating power is simulated to obtain the surface temperature distribution of the ceramic upper cover component 13 .

[0044] Here, a person skilled in the art may first simulate the temperature distribution inside the process chamber according to the target process temperature of the heating plate 10 (e.g., 500°C to 700°C), the preset ambient temperature (e.g., 25°C), the first material and the first thickness of the process chamber sidewall, and the second material and the second thickness of the process chamber film gate valve, so as to determine the temperature of multiple positions inside the process chamber. Then, according to the installation position of each partition of the heating plate 10 in the process chamber, the ambient temperature parameters of each heating wire sub-component are set respectively.

[0045] After that, the heating wire structure of the heating wire sub-component of at least one low-temperature partition is adjusted according to the surface temperature distribution of the ceramic upper cover component 13 until a structural model that meets the temperature distribution uniformity requirement is obtained. Specifically, those skilled in the art can adjust the heating wire structure of the heating wire sub-component of at least one low-temperature partition and simulate again, and adjust again according to the previous simulation result until a structural model that meets the temperature distribution uniformity requirement is obtained.

[0046] Here, those skilled in the art can increase the distribution density of the heating wires in the heating wire sub-assembly by uniformly reducing the spacing between the heating wires in the heating wire sub-assembly of the low-temperature partition (for example, by adjusting the direction of the heating wires). At this time, the heating wire density of the first heating wire sub-assembly of the low-temperature partition near the film transmission gate valve after adjustment is greater than the heating wire density of the second heating wire sub-assembly of the high-temperature partition away from the film transmission gate valve.

[0047] Finally, according to the structural model that meets the requirements of temperature distribution uniformity, multiple heating wire sub-components corresponding to the heating wire structure are sintered to multiple partitions between the ceramic base component 11 and the ceramic upper cover component 13 to manufacture the heating plate 10.

[0048] Please refer to Figure 2-3 , Figure 2 A schematic structural diagram of a heating plate provided according to some embodiments of the present invention is shown. Figure 3 A schematic structural diagram of heating plate partitions provided according to some embodiments of the present invention is shown.

[0049] like Figure 2-3 As shown, the first heating plate 10 is manufactured by the manufacturing method of the above-mentioned heating plate 10, including a ceramic base component 11, a heating wire component 12 and a ceramic upper cover component 13, the heating wire component 12 is located between the ceramic base component 11 and the ceramic upper cover component 13, and is divided into multiple heating wire sub-components according to multiple preset partitions, wherein the heating wire distribution density of the first heating wire sub-component of at least one cold zone 20 in the multiple partitions is greater than the heating wire distribution density of the second heating wire sub-component of at least one hot zone 30 in the multiple partitions.

[0050] In some embodiments, the heating plate 10 is installed in a process chamber, wherein the distance from at least one cold zone 20 to a film gate valve of the process chamber is smaller than the distance from at least one hot zone 30 to the film gate valve.

[0051] In addition, the heating plate 10 is also provided with a plurality of temperature sensors, a plurality of power supply units and a controller. The plurality of temperature sensors are used to collect the actual temperature of each partition. The plurality of power supply units are respectively connected to each heating wire sub-component. The controller is used to adjust the heating power output by the corresponding power supply unit to the corresponding heating wire sub-component according to the actual temperature collected by the plurality of temperature sensors, so as to compensate for the uniformity of the temperature distribution at multiple positions on the surface of the ceramic upper cover component 13.

[0052] Please refer to Figure 4A to Figure 4B , Figure 4A A schematic diagram of the surface temperature distribution simulation of an existing heating plate is shown. Figure 4B A schematic diagram of surface temperature distribution simulation of a heating plate provided according to some embodiments of the present invention is shown.

[0053] like Figure 4A to Figure 4B As shown, the range of the surface temperature of the conventional heating plate 10 is 3.2° C., while the range of the surface temperature distribution of the heating plate 10 of the present invention is 2.3° C., which effectively improves the uniformity of the surface temperature distribution.

[0054] Please refer to Figure 5 , Figure 5 A schematic structural diagram of a process chamber provided according to some embodiments of the present invention is shown.

[0055] like Figure 5 As shown, the heating plate provided in the second aspect of the present invention can be configured in the process chamber provided in the third aspect of the present invention. The process chamber can be configured with a film transfer port 40 and at least one of the first heating plates 10. The film transfer port 40 is connected to the transmission chamber of the semiconductor device processing equipment, and is provided with a film transfer gate valve that blocks the process chamber and the transmission chamber. The heating wire distribution density of the first heating wire sub-component of at least one cold zone 20 close to the film transfer gate valve of the at least one first heating plate 10 is greater than the heating wire distribution density of the second heating wire sub-component of at least one hot zone 30 away from the film transfer gate valve.

[0056] Furthermore, the process chamber may also include at least one second heating plate 10. The distance between the second heating plate 10 and the film transfer gate valve is greater than the distance between the first heating plate 10 and the film transfer gate valve, and the heating wire distribution density of the heating wire component 12 of the second heating plate 10 is the same at each position thereof.

[0057] Furthermore, the process chamber includes two first heating plates 10 and four second heating plates 10, wherein each heating plate 10 is arranged around a fixed terminal in the center of the process chamber, one side of the two first heating plates 10 is adjacent to the film transfer port 40, and the four second heating plates 10 are located on the other side opposite to the two first heating plates 10.

[0058] In addition, the process chamber provided in the third aspect of the present invention can be configured in the processing equipment of the semiconductor device provided in the fourth aspect of the present invention. The processing equipment of the semiconductor device also includes a front-end module (Equipment Front End Module, EFEM), a load lock cavity (Load Lock, LL), a transfer cavity (Transfer Module, TM), and at least one process chamber (Process Module, PM).

[0059] The front-end module is used to obtain wafers to be processed from the outside world and output the processed wafers to the outside world. The load lock cavity connects the front-end module and the transmission cavity at the rear end, and is used to convert the atmospheric environment and the vacuum environment. The transmission cavity connects the load lock cavity and at least one process chamber as any one of the third aspects of the present invention to dispatch and recycle wafers. At least one process chamber is used to perform a processing process on the wafers therein.

[0060] In summary, the manufacturing method of the heating plate, the heating plate, the process chamber, and the processing equipment for semiconductor devices provided by the present invention can be used to adjust the temperature at the film transfer port of the heating plate to improve the uniformity of thin film deposition.

[0061] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0062] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for manufacturing a heating plate, characterized in that: The following steps are involved: Constructing a structural model of the heating plate and defining material properties of each component therein, wherein the structural model includes a ceramic base component, a heating wire component and a ceramic upper cover component, wherein the heating wire component is located between the ceramic base component and the ceramic upper cover component and is divided into a plurality of heating wire sub-components according to a plurality of preset partitions; According to the installation position of the heating plate in the process chamber, the ambient temperature parameters of each heating wire component are set, and the rated heating power is simulated to obtain the surface temperature distribution of the ceramic upper cover component; According to the surface temperature distribution of the ceramic upper cover component, adjusting the heating wire structure of at least one heating wire sub-component of the low-temperature zone until a structural model that meets the temperature distribution uniformity requirement is obtained; and According to the structural model that meets the requirements of temperature distribution uniformity, a plurality of heating wire sub-components corresponding to the heating wire structure are sintered to the plurality of partitions between the ceramic base component and the ceramic upper cover component respectively to manufacture the heating plate.

2. The manufacturing method according to claim 1, characterized in that The step of setting the ambient temperature parameters of each heating wire component according to the installation position of the heating disk in the process chamber comprises: Simulating the temperature distribution inside the process chamber according to the target process temperature of the heating plate, the preset ambient temperature, the first material and the first thickness of the process chamber sidewall, and the second material and the second thickness of the process chamber wafer gate valve to determine the temperatures at multiple locations inside the process chamber; and According to the installation position of each partition of the heating disk in the process chamber, the ambient temperature parameters of each heating wire component are set respectively.

3. The manufacturing method according to claim 2, characterized in that: The step of adjusting the heating wire structure of the heating wire sub-component of at least one low-temperature zone according to the surface temperature distribution of the ceramic upper cover component comprises: The spacing between the heating wires in the heating wire sub-component of the low-temperature zone is uniformly reduced to increase the distribution density of the heating wires in the heating wire sub-component.

4. A heating plate, comprising a ceramic base component, a heating wire component and a ceramic upper cover component, characterized in that: The heating wire component is located between the ceramic base component and the ceramic upper cover component, and is divided into a plurality of heating wire sub-components according to a plurality of preset partitions, wherein a heating wire distribution density of a first heating wire sub-component in at least one cold zone among the plurality of the partitions is greater than a heating wire distribution density of a second heating wire sub-component in at least one hot zone among the plurality of the partitions.

5. The heating plate according to claim 4, characterized in that The heating plate is installed in a process chamber, wherein the distance from the at least one cold zone to a film transfer gate valve of the process chamber is smaller than the distance from the at least one hot zone to the film transfer gate valve.

6. The heating plate according to claim 4, characterized in that Also includes: A plurality of temperature sensors, used for collecting the actual temperature of each of the partitions; A plurality of power supply units, connected to the heating wire components respectively; as well as The controller is used to adjust the heating power output by the corresponding power supply unit to the corresponding heating wire component according to the actual temperature collected by the multiple temperature sensors, so as to compensate for the uniformity of the temperature distribution at multiple positions on the surface of the ceramic upper cover component.

7. A process chamber, characterized in that: include: A film transfer port connected to a transfer cavity of a semiconductor device processing equipment and provided with a film transfer gate valve that separates the process chamber from the transfer cavity; as well as At least one first heating disk is selected as the heating disk described in any one of claims 4 to 6, and the heating wire distribution density of the first heating wire sub-component of at least one cold zone close to the film transmission gate valve is greater than the heating wire distribution density of the second heating wire sub-component of at least one hot zone away from the film transmission gate valve.

8. The process chamber according to claim 7, characterized in that: Also includes: At least one second heating plate, wherein the distance from the second heating plate to the film transfer gate valve is greater than the distance from the first heating plate to the film transfer gate valve, and the heating wire distribution density of the heating wire component of the second heating plate at each position thereof is the same.

9. The process chamber according to claim 8, characterized in that: The process chamber includes two first heating plates and four second heating plates, wherein each of the heating plates is arranged around a fixed terminal in the center of the process chamber, one side of the two first heating plates is adjacent to the film transfer port, and the four second heating plates are located on the other side opposite to the two first heating plates.

10. A semiconductor device processing equipment, characterized in that: include: The front-end module is used to obtain wafers to be processed from the outside world and output the processed wafers to the outside world; A load lock cavity, connecting the front-end module and the rear-end transmission cavity, for switching between the atmospheric environment and the vacuum environment; The transfer chamber is connected to the load lock chamber and at least one process chamber as claimed in any one of claims 7 to 9 to perform the dispatch and recovery of the wafer; and At least one of the process chambers is used to perform a processing process on the wafer therein.

Images