Processing Method, Device, System and Storage Medium for Solar Cell Repair
By determining the performance parameters and equivalent models of solar cells, the appropriate forward bias recovery time and voltage waveform are calculated, and the applicability of bias repair strategies for solar cells in the prior art to different structures and components is solved, and performance recovery and efficiency improvement are achieved.
Patent Information
- Application Number
- CN202510287407.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-12
- Publication Date
- 2025-07-11
- Estimated Expiration
- 2045-03-12
AI Technical Summary
The application of fixed bias voltage repair strategies to solar cells in the prior art may cause unnecessary ion movement damage and cannot be applied to solar cells of different structures and components, affecting their performance recovery effect.
By determining the performance parameters of the solar cell, performing equivalent model fit, a specific forward bias recovery time and voltage waveform are calculated, and a customized forward bias repair is carried out for solar cells of different structures and components to avoid ion movement damage.
Effective recovery of solar cell performance is achieved, additional damage caused by the application of unlogical bias voltage is avoided, and recovery efficiency and photoelectric conversion efficiency are improved.
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Figure CN119816169B_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of photovoltaic power generation, and particularly relates to a processing method, device, system and storage medium for repairing solar cells. Background Art
[0002] Solar cells (such as perovskite cells) show great potential in the energy field due to their excellent photoelectric conversion efficiency. However, there are a large number of ion migrations in solar cells under actual working conditions, which leads to a decline in the performance of solar cells.
[0003] In related technologies, a method of applying a bias voltage is usually used to restore ion migration in solar cells; however, existing solutions usually adopt a fixed bias voltage repair strategy for solar cells, which may cause unnecessary ion migration damage and is not conducive to the repair of solar cell performance. Summary of the Invention
[0004] The present application provides a processing method, device, system and storage medium for repairing solar cells, which can adaptively apply a specific forward bias voltage and application duration to solar cells with different structures and different components, and is beneficial to the restoration of solar cell performance.
[0005] The technical solution of the present application is implemented as follows:
[0006] In a first aspect, an embodiment of the present application provides a processing method for repairing solar cells, and the processing method includes:
[0007] Determine the performance parameters of the solar cell;
[0008] Perform equivalent model fitting according to the performance parameters to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch;
[0009] Determine the application duration and the applied voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value and the maximum power parameter in the performance parameters; wherein, the application duration and the applied voltage waveform are used for forward bias voltage restoration of the solar cell to repair the solar cell.
[0010] Through the above technical means, first determine the performance parameters of the solar cell; then perform equivalent model fitting according to the performance parameters of the solar cell to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch; then determine the duration to be applied and the voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters, so as to achieve the forward bias recovery of the solar cell. In this way, the parameters of each component in the equivalent model of the solar cell are determined according to the performance parameters of the solar cell, and the duration to be applied and the voltage waveform to be applied to the solar cell are calculated according to the parameters of each component and the maximum power parameter; in this way, the duration to be applied and the voltage waveform to be applied to different solar cells with different structures and different components can be adaptively determined respectively, so as to apply customized forward bias to different solar cells, which not only helps to achieve the recovery of the performance of the solar cell, but also can avoid the additional damage to the ion migration of the solar cell caused by the illogical forward bias application in the related technology, and further can protect the internal structure of the solar cell from further damage, and further improve the recovery efficiency and performance of the solar cell.
[0011] In some embodiments, determining the duration to be applied and the voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters includes: determining the duration to be applied according to the first capacitance value and the first resistance value; determining the voltage waveform to be applied according to the series resistance value and the maximum power parameter.
[0012] Through the above technical means, due to ion migration in the solar cell, there is a capacitance effect in the solar cell, such as a perovskite cell; according to the principle of capacitor charge and discharge, the time required for the first capacitor to be fully charged is related to the first capacitance and the first resistance of the capacitance branch, so the first capacitance and the first resistance can be used to determine the duration to be applied; and when the first capacitor is fully charged, the solar cell operates at the maximum power point, so the maximum power parameter and the series resistance value can also be used to determine the voltage waveform to be applied. In this way, based on the principle of capacitor charge and discharge and the equivalent model of the solar cell, the method for forward bias recovery of the solar cell is determined, and the first capacitor in the equivalent model of the solar cell can be fully charged, which can eliminate the capacitance effect caused by ion migration, so as to restore the ions to the original state to the greatest extent, and better achieve the performance recovery of the solar cell.
[0013] In some embodiments, determining the duration to be applied according to the first capacitance value and the first resistance value includes: performing a multiplication operation on the first capacitance value and the first resistance value to obtain a time constant; setting the duration to be applied as the product of the time constant and a preset value.
[0014] Through the above technical means, according to the principle of capacitor charging and discharging, it can be known that the voltage value when the capacitor is fully charged is 3 to 5 times the time constant of the required time, and the time constant is related to the first capacitance value and the first resistance value. In this way, by setting the duration to be applied as the product of the time constant and a preset value, the first capacitor in the equivalent model in the solar cell can be fully charged. At this time, the capacitor branch in the equivalent model is in a disconnected state, so that the capacitive effect caused by ion migration can be eliminated.
[0015] In some embodiments, according to the series resistance value and the maximum power parameter, determining the voltage waveform to be applied includes: determining the initial voltage value; determining the termination voltage value according to the series resistance value and the maximum power parameter; and generating the voltage waveform to be applied according to the initial voltage value and the termination voltage value, and the change trend of the voltage waveform to be applied conforms to the change trend of the capacitor charging waveform curve.
[0016] Through the above technical means, according to the principle of capacitor charging and discharging, it can be known that the charging process of the capacitor is related to the initial voltage value and the termination voltage value. The termination voltage value determined according to the series resistance value and the maximum power parameter makes the first capacitor in a fully charged state. Then, according to the initial voltage value and the termination voltage value, a voltage waveform to be applied that conforms to the capacitor charging waveform curve is generated. In this way, the first capacitor in the equivalent model in the solar cell can be fully charged. At this time, the capacitor branch in the equivalent model is in a disconnected state, so that the capacitive effect caused by ion migration can be eliminated, and the ions can be restored to the original state to the greatest extent, that is, the state of the ions can be restored appropriately; moreover, according to this voltage waveform to be applied, the performance recovery of the solar cell can be better realized, and the photoelectric conversion efficiency of the solar cell can be restored to the greatest extent.
[0017] In some embodiments, the maximum power parameter includes the maximum power voltage value and the maximum power current value; correspondingly, determining the termination voltage value according to the series resistance value and the maximum power parameter includes: performing an addition operation on the product of the maximum power current value and the series resistance value and the maximum power voltage value to obtain the termination voltage value.
[0018] Through the above technical means, by determining the termination voltage value through the maximum power voltage value, the maximum power current value, and the series resistance value, the first capacitor in the equivalent model in the solar cell can be in a fully charged state. At this time, the capacitor branch in the equivalent model is in a disconnected state, so that the capacitive effect caused by ion migration can be eliminated, and the ions can be restored to the original state to the greatest extent, which is beneficial to the performance recovery of the solar cell.
[0019] In some embodiments, determining the voltage waveform to be applied according to the series resistance value and the maximum power parameter includes: determining the target applied voltage value according to the series resistance value and the maximum power parameter; setting the voltage values to be applied at different times of the voltage waveform to be applied to be equal to the target applied voltage value.
[0020] By the above technical means, determining the target applied voltage value according to the series resistance value and the maximum power parameter, and performing fixed forward bias recovery on the solar cell through the target applied voltage value, can also make the first capacitor in the equivalent model of the solar cell fully charged. At this time, the capacitor branch in the equivalent model is in the off state, so as to eliminate the capacitive effect caused by ion migration, and maximize the restoration of ions to the original state, that is, appropriately restore the state of ions, which is beneficial to the restoration of the performance of the solar cell, and can also maximize the restoration of the photoelectric conversion efficiency of the solar cell.
[0021] In some embodiments, after repairing the solar cell, the processing method further includes: determining the updated performance parameters based on a preset time interval; performing equivalent model fitting according to the updated performance parameters to determine the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model; determining the updated application duration and the updated voltage waveform to be applied according to the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model and the updated maximum power parameter; wherein, the updated application duration and the updated voltage waveform to be applied are used for the next forward bias recovery of the solar cell.
[0022] By the above technical means, after repairing the solar cell, the performance parameters are updated at a preset time interval, and the parameters of each device in the equivalent model are updated based on the updated performance parameters. In this way, customized forward bias and application duration can be applied to solar cells with different aging degrees, that is, solar cells with different aging degrees can adaptively determine different forward bias waveforms and application durations, which can avoid additional damage to the ion movement of the solar cell caused by illogical forward bias application, and can also significantly improve the recovery efficiency and performance of the solar cell.
[0023] In some embodiments, the time interval for the solar cell to perform the volt-ampere characteristic test is less than the time interval for the solar cell to perform the forward bias recovery.
[0024] By means of the above technical means, the time interval for the solar cell to perform the volt-ampere characteristic test is less than the time interval for the solar cell to perform the forward bias recovery. In this way, when calculating the relevant values of the forward bias, more accurate volt-ampere characteristic test data can be obtained, which is beneficial to improving the accuracy of calculating each parameter in the equivalent model, and then a more accurate duration to be applied and the voltage waveform to be applied can be obtained. In this way, the performance recovery of the solar cell can be maximally realized, and thus the efficiency of the solar cell can be improved.
[0025] In a second aspect, an embodiment of the present application provides a processing device for repairing a solar cell. The processing device includes a determination unit, a modeling unit, and a processing unit, where:
[0026] The determination unit is configured to determine the performance parameters of the solar cell;
[0027] The modeling unit is configured to perform equivalent model fitting according to the performance parameters, and determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch;
[0028] The processing unit is configured to determine the duration to be applied and the voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters; wherein, the duration to be applied and the voltage waveform to be applied are used for forward bias recovery of the solar cell to repair the solar cell.
[0029] By means of the above technical means, the parameters of each element in the equivalent model of the solar cell are determined through the performance parameters of the solar cell, and the duration to be applied and the voltage waveform to be applied required for the solar cell are calculated according to the parameters of each element and the maximum power parameter; in this way, the duration to be applied and the voltage waveform to be applied required for different solar cells with different structures and different components can be adaptively determined respectively, so as to apply customized forward bias to different solar cells, which is not only beneficial to realizing the performance recovery of the solar cell, but also can avoid the additional damage to the ion movement of the solar cell caused by the illogical forward bias application in the related art.
[0030] In a third aspect, an embodiment of the present application provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by at least one processor, the method described in any item of the first aspect is implemented.
[0031] In a fourth aspect, an embodiment of the present application provides a repair system for a solar cell. The repair system includes a solar cell, a control device, a repair device, and a testing device. The testing device is connected to the solar cell, and the repair device is respectively connected to the control device and the solar cell: where:
[0032] A test device, configured to provide a voltage signal to a solar cell, perform a volt-ampere characteristic test on the solar cell, obtain a current signal generated by the solar cell, and send the voltage signal and the current signal to a control device;
[0033] A control device, configured to determine performance parameters of the solar cell based on the voltage signal and the current signal; perform equivalent model fitting according to the performance parameters to determine a series resistance value in the equivalent model of the solar cell and a first capacitance value and a first resistance value in a capacitance branch; and determine a duration to be applied and a voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and a maximum power parameter among the performance parameters; and send the duration to be applied and the voltage waveform to be applied to a repair device;
[0034] A repair device, configured to perform forward bias recovery on the solar cell according to the duration to be applied and the voltage waveform to be applied to repair the solar cell.
[0035] By the above technical means, the test device performs a volt-ampere characteristic test on the solar cell, so that the control device determines parameters of each component in the equivalent model of the solar cell, and the control device calculates the duration to be applied and the voltage waveform to be applied required for the solar cell according to the parameters of each component and the maximum power parameter; thus, it is possible to adaptively determine the duration to be applied and the voltage waveform to be applied required for solar cells with different structures and different components respectively, so as to apply customized forward bias to different solar cells, which is not only beneficial to the recovery of the performance of the solar cell, but also can avoid additional damage to the ion movement of the solar cell caused by illogical forward bias application in the related art, and further protect the internal structure of the solar cell from further damage, and further improve the recovery efficiency and performance of the solar cell.
[0036] In some embodiments, the repair system further includes a signal collection device, and the signal collection device is respectively connected to the test device and the control device; wherein: the signal collection device is configured to receive the voltage signal sent by the test device and the current signal generated by the solar cell, and send the voltage signal and the current signal to the control device, so that the control device can determine the performance parameters of the solar cell.
[0037] By the above technical means, the signal collection device receives the voltage signal sent by the test device and the current signal generated by the solar cell, and sends the voltage signal and the current signal to the control device, so that the control device can accurately determine the performance parameters of the solar cell, and further enable the control device to determine the duration to be applied and the voltage waveform to be applied required for forward bias recovery, which is beneficial to the recovery of the performance of the solar cell.
[0038] In some embodiments, the repair system further includes a light simulation device, and the light simulation device is connected to the control device; wherein: the light simulation device is configured to receive a control signal sent by the control device and perform light simulation on the solar cell according to the control signal.
[0039] By the above technical means, when performing repair tests on solar cells, the light simulation device can simulate various lighting conditions, such as simulating the process of light and darkness alternation under natural conditions, so as to perform repair tests on solar cells under different lighting conditions and improve the repair efficiency of solar cells.
[0040] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and do not limit the technical solutions of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0041] Figure 1 is a schematic flowchart of a processing method provided by an embodiment of the present application Figure 1 ;
[0042] Figure 2 is a schematic diagram of the composition structure of an equivalent model provided by an embodiment of the present application;
[0043] Figure 3 is a schematic flowchart of a processing method provided by an embodiment of the present application Figure 2 ;
[0044] Figure 4 is a fitting schematic diagram of a capacitor charging model provided by an embodiment of the present application;
[0045] Figure 5 is a schematic flowchart of a processing method provided by an embodiment of the present application Figure 3 ;
[0046] Figure 6 is a schematic flowchart of a processing method provided by an embodiment of the present application Figure 4 ;
[0047] Figure 7 is a schematic diagram of the composition structure of a processing device provided by an embodiment of the present application;
[0048] Figure 8 is a schematic diagram of the composition structure of a repair system provided by an embodiment of the present application;
[0049] Figure 9 is a schematic diagram of the application framework of a repair system provided by an embodiment of the present application;
[0050] Figure 10 is a schematic flowchart of a processing method provided by an embodiment of the present application Figure 5 ;
[0051] Figure 11 Flow schematic of a processing method provided by an embodiment of the present application Figure 6 。 Detailed implementation manners
[0052] In order to understand the features and technical content of the embodiments of the present application in more detail, the implementation of the embodiments of the present application will be elaborated in detail below with reference to the accompanying drawings. The accompanying drawings are only for reference and explanation, and are not used to limit the embodiments of the present application.
[0053] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.
[0054] In the following description, reference is made to "some embodiments", which describe a subset of all possible embodiments. However, it can be understood that "some embodiments" can be the same subset or different subsets of all possible embodiments, and can be combined with each other without conflict.
[0055] It should also be noted that the terms "first / second / third" involved in the embodiments of the present application are only used to distinguish similar objects and do not represent a specific order for the objects. It can be understood that "first / second / third" can be interchanged with a specific order or sequence when permitted, so that the embodiments of the present application described here can be implemented in an order other than that illustrated or described here.
[0056] In addition, the mention of "embodiment" in this article means that the specific features, structures or characteristics described in connection with the embodiment can be included in at least one embodiment of the present application. The appearance of this phrase in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment mutually exclusive with other embodiments. Those skilled in the art explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.
[0057] The relevant terms and related technologies of the present application will be introduced below.
[0058] Ion migration (or ion movement) mainly refers to the movement of ions within a solar cell material under the influence of an external electric field or concentration gradient. This migration phenomenon is closely related to factors such as the crystal structure, defects, temperature, and external electric field of the solar cell. Specifically, taking perovskite solar cells (abbreviated as "perovskite cells") as an example, the perovskite crystal, which serves as the photoactive layer, is composed of ionic bonds with relatively weak bond energies and van der Waals interactions. This results in a large number of ions in perovskite cells moving away from their original lattice positions under actual operating conditions (specific illumination and voltage). Among them, the concentration of mobile ions can reach 10 15 ~10 17 to the power of minus one per cubic centimeter (cm -3 ).
[0059] The photoelectric conversion efficiency, also known as the power conversion efficiency (PCE), measures the ability of a solar cell to convert light energy into electrical energy. The value of the photoelectric conversion efficiency is a percentage. The test equipment for solar cells uses the standard spectrum of the global horizontal irradiance spectrum (Air Mass 1.5 Global, AM1.5G); this spectrum is obtained by artificially correcting the actual AM1.5G spectrum, and its light intensity is 1000 watts per square meter (W / ㎡). If the area of a battery is 154 square centimeters (cm 2 ), and it is irradiated with the standard light of AM1.5G, the energy on it is 15.4 W. If, after testing, the power of the battery is 2.6 watts (W), then its conversion efficiency is 2.6 / 15.4 = 16.88%.
[0060] The absolute recovery rate is defined as the difference between the average retained power of the experimental group and the control group before and after aging under operating conditions. Among them, the retained power of a solar cell refers to the output power of the solar cell under specific conditions. Specifically, the retained power usually refers to the output power under standard illumination conditions (for example, the light intensity per square meter is 1000 watts); the average retained power is the average of the retained powers of multiple solar cells.
[0061] The current-voltage (IV) test is a testing method used to study the relationship between current and voltage. In electrical engineering, the IV test is a fundamental experiment. By measuring the IV curves of components such as resistors, diodes, and power supplies, this test helps understand the electrical properties of the components and their applications in circuits. The purpose of the IV test is to obtain data on the relationship between current and voltage. By plotting the IV curve, the performance characteristics of the component can be analyzed, which is very important for understanding and optimizing circuit design. Especially in the development of the solar energy industry, the effective implementation of the IV test is crucial for improving the testing methods of solar cells and enhancing the testing capabilities. This is one of the keys to accelerating the development and expansion of the solar cell industry. Through the IV test, the performance of solar cells can be evaluated to ensure that they can effectively convert and utilize solar energy, thus providing support for solving the energy crisis and rationally using solar energy resources.
[0062] Operating condition test (light-dark alternation test) in solar cells: Solar cells do not always operate under a constant sunlight intensity in actual working conditions. Instead, they are under different sunlight intensities according to the change of the solar altitude angle. Generally, the states of solar cells can be divided into the light state and the dark state. Therefore, during the performance and stability tests, the light-dark alternation test is usually adopted to simulate the actual performance of the device.
[0063] The maximum power output (Pmax) refers to the maximum electrical power output that a solar cell can generate under specific conditions. Among them, the maximum power output is measured under standard test conditions (STC), which include a certain solar irradiance, the distribution of the solar spectrum, and the temperature of the solar cell. Specifically, the STC defined by the European Commission includes the condition that the surface temperature of the solar cell is 25 degrees Celsius (°C) and the solar irradiance is 1000 W / m². Under these conditions, the maximum power that the solar cell module can output is its maximum power output.
[0064] In a resistor-capacitance (RC) circuit, the time constant (which can be represented by "τ") is equal to the product of the resistance and the capacitance. It is an important parameter of the RC circuit. The time constant represents the time required for the circuit to transition from one steady-state condition to another under a step-change input condition. For an RC circuit, the time constant is defined as the product of the resistance value and the capacitance value, i.e., τ = RC. This constant plays an important role in circuit analysis and design, especially in describing the transient response time process of the circuit. The time constant represents the time required for a physical quantity to decay from its maximum value to 1 / e of its maximum value. For a quantity that decays exponentially, the time required for its amplitude to decay to 1 / e times is the time constant. In an RC circuit, the time constant determines the charging or discharging speed of the capacitor. When the capacitor is charged to 63%, the required time is 1 time constant; when charged to 95%, it requires 3 time constants. Therefore, by adjusting the values of the resistance and the capacitance, the transient response time of the RC circuit can be controlled to meet different application requirements.
[0065] The PN junction of a solar cell is its core component. The PN junction is formed by using different doping processes to fabricate a P-type semiconductor and an N-type semiconductor on the same silicon wafer, and at their interface. In the N-type semiconductor, there are many electrons and few holes; in the P-type semiconductor, there are many holes and few electrons. When these two semiconductors are combined to form a PN junction, due to the carrier concentration gradient between them, diffusion movements of holes from the P region to the N region and electrons from the N region to the P region occur. Near the PN junction, due to the diffusion movement of carriers, a space charge region is formed, and the charges in it generate an electric field pointing from the N region to the P region, i.e., the built-in electric field. Forward biasing the PN junction means that the P region (the side of the hole transport layer in the perovskite device) is connected to the positive pole of the power supply, and the N region (the side of the electron transport layer in the perovskite) is connected to the negative pole of the power supply. The width of the PN junction barrier becomes smaller, and the current passing through the PN junction increases.
[0066] In addition, based on the theory of capacitor charging and discharging, the relationship between voltage and charging time can be obtained as follows:
[0067] (1)
[0068] Where, is the voltage value on the capacitor at time t, is the initial voltage value on the capacitor, is the terminal voltage value on the capacitor; τ is the time constant, and τ = RC, where R is the resistance and C is the capacitance. Formula (1) describes the voltage value There is an exponential relationship with the charging time t. Similarly, through derivation, the relationship between current and charging time can be obtained as follows:
[0069] (2)
[0070] where, is the current value at time t on the capacitor, is the initial current value on the capacitor, is the terminal current value on the capacitor; Usually, in an RC circuit, the time constant determines the charging or discharging speed of the capacitor. When the capacitor is charged to 63%, the required time is 1 time constant; when charged to 95%, 3 time constants are required. Therefore, by adjusting the values of the resistor and capacitor, the transition response time of the RC circuit can be controlled to meet different application requirements.
[0071] With the development of new energy, photovoltaic power generation systems have been widely used. A photovoltaic power generation system is a power generation system that directly converts solar radiation energy into electrical energy using the photovoltaic effect of semiconductor materials. Such systems usually consist of solar cells, controllers, inverters, storage batteries and other accessories. Among them, the solar cell is the core part of the entire photovoltaic power generation system, which is used to convert solar energy into direct current electrical energy.
[0072] Exemplarily, taking a perovskite solar cell as an example, it has excellent photoelectric conversion efficiency and has received wide attention. However, the perovskite crystal as the photoactive layer is composed of ionic bonds with relatively weak bond energies and van der Waals interactions, which leads to a large amount of ion movement in perovskite solar cells under actual working conditions.
[0073] Here, due to the induction of the built-in electric field, ions tend to accumulate at the edges, resulting in a rapid deterioration of the device efficiency. In addition, when ions move into the charge transport layer, they may change the energy level structure of the charge transport layer, thus affecting the charge collection efficiency; react with the metal back contact to form an insulating layer and change the work function, thus affecting the charge collection efficiency; lose electrons and convert into halogen elemental gas and volatilize, resulting in a decrease in the long-term stability of perovskite devices, etc.; the above results will all lead to a decrease in the long-term stability of perovskite devices. Therefore, preventing the loss of ions in the perovskite layer and thus ensuring the stability of the perovskite layer structure is of great significance for the efficiency and stability of the device.
[0074] Although methods such as using an interface buffer layer and enhancing the bond energy in the perovskite crystal structure have been proposed in the related art to block the ion movement in perovskite, the structure of the perovskite ionic crystal still cannot prevent ion movement on a long time scale. In addition, the related art has also proposed a method of applying a bias voltage using special equipment to restore the ion movement in perovskite. However, these above methods do not provide the application logic of the bias voltage, and for the perovskite battery industry that is still in the initial stage of industrialization and has numerous routes, it will lack effective guiding significance. Exemplarily, in the related art, the ion movement in a solar cell is usually restored by applying a bias voltage to the solar cell; however, this method usually tests a solar cell with a specific structure and composition to obtain the applied voltage and the applied duration required for applying the bias voltage, and both the applied voltage and the application method are fixed values, which may cause excessive ion movement and is not applicable to solar cells with different structures and different compositions.
[0075] Based on this, an embodiment of the present application provides a processing method for solar cell repair. First, determine the performance parameters of the solar cell; then perform equivalent model fitting according to the performance parameters of the solar cell to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch; then determine the duration to be applied and the voltage waveform to be applied for the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters, so as to achieve the forward bias recovery of the solar cell. In this way, the parameters of each component in the equivalent model of the solar cell are determined through the performance parameters of the solar cell, and the duration to be applied and the voltage waveform to be applied for the solar cell are calculated according to the parameters of each component and the maximum power parameter; thus, it is possible to adaptively determine the duration to be applied and the voltage waveform to be applied for different solar cells with different structures and different compositions respectively, so as to apply a customized forward bias to different solar cells, which is not only beneficial to the restoration of the performance of the solar cell, but also can avoid the additional damage to the ion movement of the solar cell caused by the illogical forward bias application in the related art, and further can protect the internal structure of the solar cell from further damage, and further improve the recovery efficiency and performance of the solar cell.
[0076] The following further elaborates on the present application through the accompanying drawings and specific embodiments.
[0077] In an embodiment of the present application, Figure 1 is a schematic flowchart of a processing method provided by an embodiment of the present application Figure 1 . As Figure 1 shown, the processing method may include:
[0078] S101, determine the performance parameters of the solar cell.
[0079] In the embodiments of the present application, the solar cell may be a perovskite cell. Here, the solar cell may be referred to as a solar cell, or may be referred to as a photovoltaic device, or may also be referred to as a device, and no specific limitation is made thereto.
[0080] In the implementation of the present application, the volt-ampere characteristics of the solar cell can be tested by a test device. Through the volt-ampere characteristics test, an IV curve can be obtained, and by analyzing the IV curve, the performance parameters corresponding to the IV curve can be obtained. Among them, the performance parameters may include open-circuit voltage Voc, short-circuit current Isc, maximum power parameter, fill factor FF, and maximum conversion efficiency Eff, etc. Among them, the maximum power parameter may include the maximum power voltage V MPP and the maximum power current I MPP . Here, the maximum power voltage may also be referred to as the maximum power point voltage, the maximum power current may also be referred to as the maximum power point current, and the IV test may also be referred to as an IV scan.
[0081] In the embodiments of the present application, to test the volt-ampere characteristics of the solar cell, the test can be carried out by connecting measuring equipment, etc. Specifically, under simulated sunlight irradiation, the bias voltage is gradually applied and the current values at different bias voltages are recorded, so as to plot the IV curve of the solar cell, and based on this, performance parameters such as open-circuit voltage, short-circuit current, maximum output parameter, and fill factor are analyzed. Here, if a test device with high measurement accuracy, such as an active ammeter, is used, then an accurate IV curve can be obtained by performing an IV test on the solar cell once; if a test device with low measurement accuracy, such as an electronic load, is used, then multiple IV tests (for example, 10 times) need to be carried out on the solar cell to obtain multiple IV curves, and then the average of these multiple IV curves is obtained to get an IV curve and use it as the final IV curve, or select the IV curve in the middle position among these multiple IV curves and use it as the final required IV curve. No specific limitation is made thereto, as long as an accurate IV curve can be obtained.
[0082] In addition, in the embodiments of the present application, since solar cells with different components, structures, and aging degrees have different equivalent models and corresponding IV curves. Therefore, the IV test can be carried out on a fresh solar cell to obtain the corresponding IV curve, so as to obtain the equivalent model corresponding to the solar cell.
[0083] It should also be noted that when conducting the initial IV test on a solar cell, the solar cell needs to be pre-treated. For example, the solar cell is first treated in the dark state, and then after being placed for a period of time, it is treated in the light state. This can obtain a stable IV curve and avoid the problem that the obtained IV curve is inaccurate due to the metastable state of perovskite cells and other solar cells.
[0084] S102. According to the performance parameters, perform equivalent model fitting to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch.
[0085] In the embodiments of the present application, there is an obvious capacitance effect in perovskite cells and other solar cells, while there is no obvious capacitance effect in inorganic solar cells such as silicon and selenium. The main reason is that for solar cells such as silicon and copper indium gallium selenide, their chemical bonds are ionic bonds or stronger chemical bonds, and the phenomenon of ion migration is not obvious; while for perovskite cells, the bonding of their chemical bonds is relatively weak, and there is an obvious phenomenon of ion migration, resulting in an obvious capacitance effect. Therefore, for solar cells with a capacitance effect, such as perovskite cells, after obtaining the performance parameters, the equivalent model describing the characteristics of the solar cell and the RC circuit model describing the capacitance characteristics are combined for fitting to determine the equivalent model of the solar cell. That is to say, through the data obtained from the IV test, the specific values of components such as resistors, capacitors, and inductors in the equivalent circuit can be deduced, thereby establishing an accurate equivalent model. Here, the equivalent model can be called an equivalent circuit, or it can be called an equivalent loop model, or it can also be called an equivalent loop.
[0086] In the embodiments of the present application, Figure 2 is a schematic diagram of the composition structure of an equivalent model provided by an embodiment of the present application. Figure 2 The equivalent model shown is obtained by fitting the data obtained from the IV test of a perovskite cell. The device structure of this perovskite cell is FTO / NiOX / Perovskite / C60 / ALD-SnOX / Cu. As Figure 2 shown, the equivalent circuit of this solar cell includes a current source Bi, a diode D, a first capacitor C, a first resistor R, a parallel resistor R sh and a series resistor R s , for the connection relationship of each equivalent component, please refer to Figure 2 shown. Here, the first capacitor C and the first resistor form a capacitance branch, that is, an RC circuit; based on the principle of capacitor charging and discharging, when the capacitor in the capacitance branch is fully charged, the capacitance branch where the first capacitor and the first resistor are located is disconnected. At this time, the external voltage on both sides of the positive and negative motors is the maximum power voltage, and the current flows through the series resistorR s The circuit of s is the maximum power current. Additionally, at the maximum power output of the solar cell, the voltage across the positive and negative electrodes is the maximum power voltage, and the current flowing through the series resistance R s The circuit of s is the maximum power current.
[0087] Here, a detailed explanation of the device structure FTO / NiOX / Perovskite / C60 / ALD - SnOX / Cu is as follows: FTO is fluorine - doped tin oxide, which serves as a transparent conductive substrate. It is the starting point of the perovskite cell and has high light transmittance and excellent electrical conductivity, allowing sunlight to enter the cell and effectively collecting the generated current; NiOX is nickel oxide, which is part of the hole - transporting layer and is used to collect and transport the photo - generated holes generated by the perovskite layer; Perovskite is perovskite, and the perovskite layer is the core part of the perovskite cell. As the light - absorbing layer material, it absorbs sunlight and generates electron - hole pairs. C60 is fullerene, and the C60 layer is usually part of the electron - transporting layer and is used to efficiently export the photo - generated electrons from the perovskite layer to the external circuit; ALD - SnOX is atomic layer - deposited tin oxide, which serves as an electron - transporting layer or an interface modification layer and is used to further optimize the electron - transporting performance of the cell; Cu is copper, which is used to collect the current generated by the perovskite cell and output it to the external circuit.
[0088] It should be noted that Figure 2 is only a schematic diagram of the equivalent circuit of a perovskite cell, which includes a capacitance branch and can reflect the characteristics of the perovskite cell. Here, for different device structure designs, the specific forms of each component in the equivalent circuit may be different. For example, the capacitance branch includes two capacitors and one resistor, and these two capacitors and this one resistor are all connected in series. However, for the characteristic that the equivalent circuits of different device structures may be different, it does not affect the calculation of the applied voltage and the applied duration required for forward - bias recovery. That is to say, the processing method for solar cell repair provided in this application can still be used. That is, the processing method for solar cell repair provided in the embodiments of this application can apply customized forward - bias recovery for solar cells with different device structures, different components, and different aging degrees, thus avoiding additional damage to the ion movement of the device caused by illogical bias application.
[0089] S103. Determine the duration to be applied and the waveform of the voltage to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters; wherein, the duration to be applied and the waveform of the voltage to be applied are used for forward - bias recovery of the solar cell to repair the solar cell.
[0090] In the embodiments of the present application, the duration to be applied and the voltage waveform to be applied to the solar cell can be determined through the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter among the performance parameters. In this way, forward bias recovery can be performed on the solar cell to repair the solar cell. Here, the voltage waveform to be applied can also be referred to as the forward bias waveform.
[0091] It should be noted that the PN junction of the solar cell is its core component. The PN junction is formed by using different doping processes to fabricate a P-type semiconductor (high hole concentration) and an N-type semiconductor (high electron concentration) on the same silicon wafer. Taking the perovskite cell as an example, its PN junction is in a reverse bias state during operation, which leads to ion migration. At this time, a forward bias needs to be applied to appropriately restore the ion state so that the perovskite cell can recover its performance. It can also be understood that there is ion movement in the solar cell under light. For the perovskite cell, its lattice is too soft, making the bond between ions very thin and easily broken under light, resulting in the movement of some ions, and the movement of these ions is the main reason for the attenuation of most devices. The purpose of performing forward bias recovery is to make these ions return to their original positions before they completely damage the device, so as to restore the performance of the device to the greatest extent.
[0092] In some embodiments, the time interval for the solar cell to perform the volt-ampere characteristic test is less than the time interval for the solar cell to perform forward bias recovery.
[0093] In the embodiments of the present application, the time interval for the solar cell to perform the volt-ampere characteristic test is less than the time interval for the solar cell to perform forward bias recovery. Exemplarily, if forward bias recovery is performed once a day, then in the light state, IV tests can be performed at time intervals such as 3 hours and 12 hours to obtain the duration to be applied and the voltage waveform to be applied required for forward bias recovery, and forward bias recovery is performed on the solar cell in the dark state. If normal bias recovery is performed once every three days, then an IV test can be performed once a day in the light state to obtain the duration to be applied and the voltage waveform to be applied required for forward bias recovery, and forward bias recovery is performed on the solar cell in the dark state on the third day. It should also be noted that in the embodiments of the present application, the volt-ampere characteristic test is first performed on the solar cell to determine the performance parameters of the solar cell, and then the method of forward bias recovery is determined. Then, forward bias recovery is performed on the solar cell according to the determined method of forward bias recovery to achieve the recovery of the performance of the solar cell.
[0094] That is to say, the time interval for the solar cell to perform the volt-ampere characteristic test is less than the time interval for the solar cell to perform the forward bias recovery. In this way, when calculating the relevant values of the forward bias, more accurate volt-ampere characteristic test data can be obtained, which is beneficial to improving the accuracy of calculating the parameters of each component in the equivalent model, and then a more accurate duration to be applied and the voltage waveform to be applied can be obtained. In this way, the performance recovery of the solar cell can be maximally realized, and thus the efficiency of the solar cell can be improved.
[0095] In this way, the time interval for the solar cell to perform the volt-ampere characteristic test is less than the time interval for the solar cell to perform the forward bias recovery. In this way, according to the actual situation of the solar cell, such as the degree of aging, a specific forward bias repair method can be applied, so that the performance recovery of the solar cell can be maximally realized, and thus the efficiency of the solar cell can be improved.
[0096] The embodiment of the present application provides a processing method for repairing a solar cell. The parameters of each component in the equivalent model of the solar cell are determined through the performance parameters of the solar cell, and the duration to be applied and the voltage waveform to be applied required for the solar cell are calculated according to the parameters of each component and the maximum power parameter; in this way, the duration to be applied and the voltage waveform to be applied required for different solar cells with different structures and different components can be adaptively determined respectively, so as to apply a customized forward bias to different solar cells, which is not only beneficial to realizing the performance recovery of the solar cell, but also can avoid the additional damage to the ion movement of the solar cell caused by the illogical forward bias application in the related technology, and further can protect the internal structure of the solar cell from further damage, and further improve the recovery efficiency and performance of the solar cell.
[0097] In another embodiment of the present application, Figure 3 is a schematic flow chart of a processing method provided by the embodiment of the present application Figure 2 . On the Figure 1 basis, as Figure 3 shown, for determining the duration to be applied and the voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value and the maximum power parameter in the performance parameters, it may include:
[0098] S301, determine the duration to be applied according to the first capacitance value and the first resistance value.
[0099] In the embodiment of the present application, after obtaining the equivalent model of the solar cell, the solar cell is placed under working conditions to work. For example, a sunlight simulation device can be used to simulate the illumination of the solar cell so that the solar cell works in the light state, and then a device is used to scan the maximum power output point of the device, and an IV scan is performed at a given time interval, so as to record the series resistance through the IV scanR s Key performance parameters such as the short - circuit current Isc. At the same time, based on the principle of capacitor charge and discharge, the curve of voltage changing with charging time follows formula (1), that is ; when the device is at a fixed bias voltage, the resistance value of the first resistor R in the capacitor branch remains fixed. Then, at this time, formula (1) can be evolved into formula (2), that is, from Simplified to get . Here, by fitting the curve of the rising section of the operating condition power, the time constant can be obtained. Figure 4 is a fitting schematic diagram of a capacitor charging model provided by an embodiment of the present application. As Figure 4 shown, the abscissa represents time, with the unit of seconds (s or sec); the ordinate represents current, with the unit of amperes (A); the circles represent the original data, and the thick dashed line represents the fitting curve obtained by fitting the original data. The corresponding relational expression of this fitting curve is as shown in formula (3); through fitting, the time constant can be obtained as , and the goodness of fit R 2 is 0.9452, close to 1, indicating that the fitting is very good and the data credibility is high. Among them, the goodness of fit R 2 , is an important index to measure the fitting effect of the model, and its value ranges between 0 and 1. The closer it is to 1, the better the model fits. That is to say, in the embodiment of the present application, based on the principle of capacitor charge and discharge, the time application constant can be directly obtained according to the first capacitance value and the first resistance value.
[0100] (3)
[0101] In some embodiments, for determining the duration to be applied according to the first capacitance value and the first resistance value, it may include: performing a multiplication operation on the first capacitance value and the first resistance value to obtain a time constant; setting the duration to be applied as the product of the time constant and a preset value.
[0102] In the embodiment of the present application, the time constant = the first capacitance value × the first resistance value. Since solar cells such as perovskite cells have a capacitance effect, based on the principle of capacitor charge and discharge, when the charging time is 3 time constants, the capacitor voltage is charged to 95%, when the charging time is 4 time constants, the capacitor voltage is charged to 98%, and when the charging time is 5 time constants, the capacitor voltage is charged to 100%. That is, the preset value can be any value within the interval [3, 5]. In the related art, it is usually considered that when the capacitor voltage reaches 95%, it is fully charged. In a specific embodiment, the preset value is equal to 3.
[0103] In this way, due to ion migration in the solar cell, a capacitance effect exists in the solar cell. For example, in a perovskite cell, according to the principle of capacitor charging and discharging, the time required for the capacitor to be fully charged is 3 to 5 times the time constant, and the time constant is related to the first capacitance value and the first resistance value. In this way, the duration to be applied is set to the product of the time constant and a preset value, so that the first capacitance in the equivalent model in the solar cell can be fully charged. At this time, the capacitance branch in the equivalent model is in a disconnected state, thereby being able to eliminate the capacitance effect caused by ion migration, which is beneficial to the restoration of the performance of the solar cell and can also maximize the restoration of the photoelectric conversion efficiency of the solar cell.
[0104] S302. Determine the voltage waveform to be applied according to the series resistance value and the maximum power parameter.
[0105] In the embodiment of the present application, according to the series resistance value and the maximum power parameter, specifically, according to the series-parallel resistance value, the maximum power voltage, and the maximum power current, the voltage waveform to be applied required for forward bias recovery can be obtained to perform forward bias repair on the solar cell.
[0106] In some embodiments, for determining the voltage waveform to be applied according to the series resistance and the maximum power parameter, it may include: determining the target applied voltage value according to the series resistance value and the maximum power parameter; setting the applied voltage values of the voltage waveform to be applied at different times to be equal to the target applied voltage value.
[0107] In the embodiment of the present application, the maximum power parameter may include the maximum power current value and the maximum power voltage value; correspondingly, the product of the maximum power current value and the series resistance value and the maximum power voltage value are added to obtain the target applied voltage value, that is, the target applied voltage value = maximum power current value × series resistance value + maximum power voltage value. Then, the applied voltage values of the voltage waveform to be applied at different times are set to be equal to the target applied voltage value. At this time, the waveform curve of the voltage waveform to be applied is a straight line.
[0108] Table 1
[0109]
[0110] In the embodiments of the present application, Table 1 is a table showing the difference in the retained power of the experimental group and the control group after two-week working condition aging provided in the embodiments of the present application. In Table 1, the duration to be applied for the forward bias repair of the experimental group is set to 3 time constants, and the voltage waveform to be applied at different times is set to be equal to the target applied voltage value, that is, the applied voltage is a forward fixed bias voltage; the control group does not perform forward bias recovery. It can be seen from Table 1 that after two weeks of forward bias recovery, the devices in the experimental group achieve an absolute power recovery of 25% relative to the devices in the control group. That is to say, through the forward bias repair proposed in the present application, it is helpful to prevent the further degradation of the internal structure of the solar cell, and thus improve the efficiency of the solar cell.
[0111] In the embodiments of the present application, according to the performance parameters and equivalent model of the solar cell (such as the maximum power parameter and the series resistance), the required applied voltage value can be quickly calculated without complex experiments and adjustments, and the recovery efficiency and performance of the solar cell can be improved; in addition, by determining the voltage value applied for forward bias recovery based on the equivalent model and maximum power parameter of the solar cell, it is helpful to prevent the further degradation of the internal structure of the solar cell, and is helpful to re-establish or restore the normal working state of the solar cell, and thus improve the efficiency of the solar cell.
[0112] In this way, by determining the target applied voltage value according to the series resistance value and the maximum power parameter, and performing fixed forward bias recovery on the solar cell through the target applied voltage value, the first capacitor in the equivalent model of the solar cell can also be in a fully charged state. At this time, the capacitor branch in the equivalent model is in an open state, so that the capacitive effect caused by ion migration can be eliminated, and the ions can be restored to the original state to the greatest extent, that is, the state of the ions can be appropriately restored, which is beneficial to the performance recovery of the solar cell, and can also restore the photoelectric conversion efficiency of the solar cell to the greatest extent.
[0113] In some embodiments, as Figure 5 shown, for determining the voltage waveform to be applied according to the series resistance value and the maximum power parameter, it may further include:
[0114] S501, determine the initial voltage value.
[0115] In the implementation of the present application, the initial voltage value is the initial voltage value on the first capacitor in the capacitor branch of the equivalent model. Here, the initial voltage value can be set to 0.
[0116] S502, determine the termination voltage value according to the series resistance value and the maximum power parameter.
[0117] In the implementation of this application, the maximum power parameters may include the maximum power voltage value and the maximum power current value. In some embodiments, for step S502, it may include: performing an addition operation on the product of the maximum power current value and the series resistance value and the maximum power voltage value to obtain the termination voltage value. That is, the termination voltage value = maximum power current value × series resistance value + maximum power voltage value.
[0118] Here, when the solar cell is at the maximum power point, its output power reaches the maximum. By determining the termination voltage value based on the maximum power voltage value, the maximum power current value, and the series resistance value, the first capacitor in the equivalent model of the solar cell can be fully charged, and at this time, the capacitor branch in the equivalent model is in an open state, thereby eliminating the capacitance effect caused by ion migration and maximizing the restoration of ions to their original state, which is beneficial to the performance restoration of the solar cell.
[0119] S503, generate the voltage waveform to be applied according to the initial voltage value and the termination voltage value, and the change trend of the voltage waveform to be applied conforms to the change trend of the capacitor charging waveform curve.
[0120] In the embodiment of this application, the change trend of the voltage waveform to be applied conforms to the change trend of the capacitor charge and discharge waveform curve, that is, the voltage waveform to be applied can be ; where is the applied voltage value at time t, is the initial voltage value, is the termination voltage value, is the time constant. Here, the time constant = first capacitance value × first resistance value.
[0121] Table 2
[0122]
[0123] In the embodiment of this application, Table 2 is a schematic table showing the difference in the retention power between the experimental group and the control group after two weeks of aging in this application. In Table 2, the duration of the forward bias repair applied to the experimental group is 3 times the time constant, and the change trend of the voltage waveform to be applied conforms to the change trend of the capacitor charging waveform curve, that is, the applied voltage is a forward variable bias; the control group does not perform forward bias recovery. It can be seen from Table 2 that after two weeks of forward bias recovery, the devices in the experimental group achieve an absolute power recovery of 30% compared to the devices in the control group. Thus, through the forward bias repair proposed in this application, it can help prevent further degradation of the internal structure of the solar cell, thereby improving the efficiency of the solar cell.
[0124] In this way, according to the principle of capacitor charging and discharging, it can be known that the charging process of the capacitor is related to the initial voltage value and the termination voltage value. The termination voltage value determined according to the series resistance value and the maximum power parameter makes the first capacitor in a fully charged state. Then, a voltage waveform to be applied that conforms to the capacitor charging waveform curve is generated based on the initial voltage value and the termination voltage value. In this way, the first capacitor in the equivalent model of the solar cell can be fully charged. At this time, the capacitor branch in the equivalent model is in an open state, so that the capacitive effect caused by ion migration can be eliminated, and the ions can be restored to the original state to the greatest extent, that is, the state of the ions is appropriately restored. Moreover, according to this voltage waveform to be applied, the performance recovery of the solar cell can be better achieved, and the photoelectric conversion efficiency of the solar cell can be restored to the greatest extent.
[0125] An embodiment of the present application provides a processing method for repairing a solar cell. Due to ion migration in the solar cell, there is a capacitive effect in the solar cell, such as a perovskite cell. According to the principle of capacitor charging and discharging, it can be known that the time required for the first capacitor to be fully charged is related to the first capacitor and the first resistor of the capacitor branch. Therefore, the first capacitor and the first resistor can be used to determine the duration to be applied. Moreover, when the first capacitor is fully charged, the solar cell operates at the maximum power point. Therefore, the maximum power parameter and the series resistance value can also be used to determine the voltage waveform to be applied. In this way, based on the principle of capacitor charging and discharging and the equivalent model of the solar cell, a method for forward bias recovery of the solar cell is determined. The first capacitor in the equivalent model of the solar cell can be fully charged, and the capacitive effect caused by ion migration can be eliminated, so that the ions can be restored to the original state to the greatest extent, that is, the state of the ions is appropriately restored, the performance recovery of the solar cell is better achieved, and the photoelectric conversion efficiency of the solar cell can be restored to the greatest extent.
[0126] In another embodiment of the present application, Figure 6 is a schematic flowchart of a processing method provided by an embodiment of the present application Figure 4 . As Figure 6 shown, after repairing the solar cell, the processing method may include:
[0127] S601, determining updated performance parameters based on a preset time interval.
[0128] In the embodiment of the present application, the preset time interval may be half a day, or it may be one day, or it may also be one week. The specific situation can be determined according to the time interval of forward bias recovery. Exemplarily, if forward bias recovery needs to be performed once a day, then the preset time interval may be half a day or one day; or if forward bias recovery needs to be performed once a week, then the preset time interval may be one week or one day, which is determined according to the actual situation and is not specifically limited herein.
[0129] It should be noted that the volt-ampere characteristic test of the solar cell is not limited to one test. The number of tests for the volt-ampere characteristic test of the solar cell can be determined according to the precision of the test instrument. For details, refer to the description in the above embodiments.
[0130] S602. Perform equivalent model fitting according to the updated performance parameters, and determine the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model.
[0131] S603. Determine the updated duration to be applied and the updated voltage waveform to be applied according to the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model and the updated maximum power parameter; wherein, the updated duration to be applied and the updated voltage waveform to be applied are used for the next forward bias recovery of the solar cell.
[0132] In the embodiment of the present application, by periodically testing the IV curve of the device under working conditions, the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model and the updated maximum power parameter are determined, and then the updated duration to be applied and the updated voltage waveform to be applied are determined. In this way, the corresponding forward bias recovery can be performed on solar cells with different aging degrees to restore the performance of the solar cell to the greatest extent.
[0133] Here, analyze the attenuation of each functional layer of the device under working conditions; for example, for a device that obeys the equivalent circuit of a non-single diode model, relative changes in the parameters of each diode and the corresponding capacitance branch will occur, which can be used to analyze the aging mechanism of the device.
[0134] That is to say, in the embodiment of the present application, continue to perform the IV test on the restored device to update the parameters in the equivalent model and the maximum power parameter, and then apply a specific forward bias recovery to the same device structure under different aging states. For example, the voltage and duration applied when the same device works at 100% are different from those when it works at 90%.
[0135] The embodiment of the present application provides a processing method for solar cell repair, which updates the performance parameters at a preset time interval and updates the parameters of each device in the equivalent model based on the updated performance parameters. In this way, customized forward bias and application duration can be applied to solar cells with different aging degrees, that is, solar cells with different aging degrees can adaptively determine different forward bias waveforms and application durations, which can avoid additional damage to the ion movement of the solar cell caused by illogical forward bias application, and can also significantly improve the recovery efficiency and performance of the solar cell.
[0136] In yet another embodiment of the present application, based on the same inventive concept as the foregoing embodiments, Figure 7 FIG. Figure 7 is a schematic structural diagram of a processing device provided by an embodiment of the present application. As shown in the figure, the processing device 70 may include a determination unit 701, a modeling unit 702, and a processing unit 703, where:
[0137] The determination unit 701 is configured to determine performance parameters of a solar cell;
[0138] The modeling unit 702 is configured to perform equivalent model fitting according to the performance parameters, and determine a series resistance value, a first capacitance value, and a first resistance value in a capacitance branch in the equivalent model of the solar cell;
[0139] The processing unit 703 is configured to determine a duration to be applied and a voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and a maximum power parameter in the performance parameters; wherein, the duration to be applied and the voltage waveform to be applied are used to perform forward bias recovery on the solar cell to repair the solar cell.
[0140] In some embodiments, the processing unit 703 is further configured to determine the duration to be applied according to the first capacitance value and the first resistance value; and determine the voltage waveform to be applied according to the series resistance value and the maximum power parameter.
[0141] In some embodiments, the processing unit 703 is further configured to perform a multiplication operation on the first capacitance value and the first resistance value to obtain a time constant; and set the duration to be applied to a product of the time constant and a preset value.
[0142] In some embodiments, the determination unit 701 is further configured to determine an initial voltage value; determine a termination voltage value according to the series resistance value and the maximum power parameter; the processing unit 703 is further configured to generate a voltage waveform to be applied according to the initial voltage value and the termination voltage value, and the change trend of the voltage waveform to be applied conforms to the change trend of the capacitance charging waveform curve.
[0143] In some embodiments, the maximum power parameter includes a maximum power voltage value and a maximum power current value; the processing unit 703 is further configured to perform an addition operation on a product of the maximum power current value and the series resistance value and the maximum power voltage value to obtain the termination voltage value.
[0144] In some embodiments, the processing unit 703 is further configured to determine a target applied voltage value according to the series resistance value and the maximum power parameter; and set the voltage values to be applied at different moments of the voltage waveform to be applied to be equal to the target applied voltage value.
[0145] In some implementations, after repairing the solar cell, the determination unit 701 is further configured to determine updated performance parameters based on a preset time interval; the modeling unit 702 is further configured to perform equivalent model fitting according to the updated performance parameters to determine the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model; the processing unit 703 is further configured to determine the updated duration to be applied and the updated voltage waveform to be applied according to the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model and the updated maximum power parameter; wherein, the updated duration to be applied and the updated voltage waveform to be applied are used for the next forward bias recovery of the solar cell.
[0146] In some embodiments, the time interval for performing the volt-ampere characteristic test on the solar cell is less than the time interval for performing the forward bias recovery on the solar cell.
[0147] The description of the above device embodiments is similar to the description of the above method embodiments and has similar beneficial effects to the method embodiments. For the technical details not disclosed in the device embodiments of the present application, please refer to the description of the method embodiments of the present application for understanding.
[0148] In yet another embodiment of the present application, Figure 8 is a schematic structural diagram of a repair system provided by an embodiment of the present application. As Figure 8 shown, the repair system 80 may include a solar cell 801, a control device 802, a repair device 803, and a test device 804. The test device 804 is connected to the solar cell 801, and the repair device 803 is respectively connected to the control device 802 and the solar cell 801: wherein:
[0149] The test device 804 is configured to provide a voltage signal to the solar cell, perform a volt-ampere characteristic test on the solar cell, obtain a current signal generated by the solar cell, and send the voltage signal and the current signal to the control device 802;
[0150] The control device 802 is configured to determine the performance parameters of the solar cell based on the voltage signal and the current signal; perform equivalent model fitting according to the performance parameters to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch; and determine the duration to be applied and the voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters; and send the duration to be applied and the voltage waveform to be applied to the repair device 803;
[0151] The repair device 803 is configured to perform forward bias recovery on the solar cell according to the duration to be applied and the voltage waveform to be applied to repair the solar cell.
[0152] In the embodiments of the present application, the testing device can be an active ammeter or an electronic load, etc., as long as it can perform IV testing on the solar cell; the repair device can be a device integrating a timer and a voltage source, or the repair device can include a timer and a voltage source, etc., as long as it can perform forward bias recovery on the solar cell; the control device can be called a controller, which can be a microcontroller or a programmable logic controller, etc.; the solar cell can be a solar cell with a capacitance effect, such as a perovskite cell; no specific limitations are made thereto.
[0153] In this way, the testing device performs a volt-ampere characteristic test on the solar cell, so that the control device determines the parameters of each component in the equivalent model of the solar cell, and the control device calculates the required application duration and the required applied voltage waveform for the solar cell according to the parameters of each component and the maximum power parameter; in this way, it can adaptively determine the required application duration and the required applied voltage waveform for different structures and different components of solar cells respectively, so as to apply a customized forward bias to different solar cells, which not only helps to restore the performance of the solar cell, but also can avoid the additional damage to the ion movement of the solar cell caused by the illogical forward bias application in the related art, and further can protect the internal structure of the solar cell from further damage, and further improve the recovery efficiency and performance of the solar cell.
[0154] In some embodiments, continuing as Figure 8 shown, the repair system 80 may further include a signal collection device 805, and the signal collection device 805 is respectively connected to the testing device 804 and the control device 802; wherein:
[0155] The signal collection device 805 is configured to receive the voltage signal sent by the testing device and the current signal generated by the solar cell, and send the voltage signal and the current signal to the control device 802, so that the control device 802 can determine the performance parameters of the solar cell 801.
[0156] In the embodiments of the present application, the signal collection device 805 is used to collect the current signal generated by the solar cell and the voltage signal applied by the testing device, and transmit them to the control device 802.
[0157] In this way, the signal collection device receives the voltage signal sent by the testing device and the current signal generated by the solar cell, and sends the voltage signal and the current signal to the control device, so that the control device can accurately determine the performance parameters of the solar cell, and further so that the control device can determine the required application duration and the required applied voltage waveform for forward bias recovery, which is beneficial to the restoration of the performance of the solar cell.
[0158] In some embodiments, continuing as Figure 8 shown, the repair system 80 further includes a light simulation device 806, and the light simulation device 806 is connected to the control device 802; wherein:
[0159] The light simulation device 806 is configured to receive a control signal sent by the control device 802 and perform light simulation on the solar cell 801 according to the control signal.
[0160] In the embodiments of the present application, the light simulation device can be referred to as a sunlight simulation device. The light simulation device can simulate various light conditions, such as full sunlight, cloudy days, morning and evening light of different intensities, etc., so as to be able to test the solar cell under different light conditions to obtain the performance parameters of the required solar cell. In addition, the control signal is used to instruct the light simulation device to perform light simulation on the solar cell. Specifically, light simulation can be performed on the solar cell during the IV test to enable the solar cell to work under the operating conditions, or when the light is insufficient when the solar cell is working, the light simulation device performs light simulation on the solar energy, and no specific limitation is made thereto.
[0161] In this way, when performing a repair test on the solar cell, the light simulation device can simulate various light conditions, such as simulating the process of light and dark alternation under natural conditions, so as to be able to perform a repair test on the solar cell under different light conditions and improve the repair efficiency of the solar cell.
[0162] In some embodiments, the test device 804 and the repair device 803 are integrated in an active electricity meter.
[0163] In this way, integrating the test device and the repair device in the active electricity meter can not only reduce the complexity of circuit connection, but also simplify the repair process of the solar cell and improve the efficiency.
[0164] In some embodiments, the control device 802 may at least include the processing device 70 described in any one of the foregoing embodiments. Or rather, the control device 802 is used to execute the processing method described in any one of the above embodiments.
[0165] In some embodiments, based on the above repair system 80, Figure 9 is a schematic diagram of an application framework of a repair system provided by an embodiment of the present application. As Figure 9 shown, the application framework includes a solar cell 801, a control device 802, a signal collection device 805, an active electricity meter 901, and a sunlight simulation device 902. Here, the test device and the repair device are integrated in the active electricity meter. In addition, the active electricity meter can also be replaced with an electronic load, a voltage source, and a timer.
[0166] In the embodiment of the present application, the solar cell 801 may include an edge cleaning area a1, a back electrode a2, a conductive tape a3, internal and external current collection points a4, internal and external current collection points a5, an insulating tape, and so on. Through the cooperation of each component of the solar cell, efficient and stable electric energy conversion is achieved to ensure that the solar panel can work long-term and reliably.
[0167] In the embodiment of the present application, the sunlight simulation device 902 is the light simulation device in the above embodiment. Among them, when monitoring the light-dark alternation characteristics of the device, actual power station data can be used or the sunlight simulation device 902 can be used for light simulation, that is, the sunlight simulation device can be used to simulate the light-dark alternation process under natural conditions.
[0168] In addition, in the embodiment of the present application, the active meter 901 is connected to the solar cell 801 and is used to apply a program-controlled bias voltage signal to the solar cell 801, thereby exciting the solar cell to generate a current signal. Among them, the active meter can also be replaced by a device that can generate a voltage signal in advance, such as an electronic load, a multimeter, etc. In addition, the signal collection device 805 is respectively connected to the active meter 901 and the control device 802 and is used to collect the current signal generated by the solar cell 801 and the bias voltage signal applied by the active meter 901.
[0169] The description of the above system embodiment is similar to the description of the above method embodiment and has similar beneficial effects to the method embodiment. For the technical details not disclosed in the system embodiment of the present application, please refer to the description of the method embodiment of the present application for understanding.
[0170] In another embodiment of the present application, based on the solar cell repair system of the foregoing embodiment Figure 10 is a schematic flow of a processing method provided by an embodiment of the present application Figure 5 . As Figure 10 shown, the processing method may include:
[0171] S1001, connect the device to the test device.
[0172] In the embodiment of the present application, the device may be a perovskite battery. First, an electrical connection is established between the device and the test device, so as to perform subsequent IV tests and continuously monitor performance parameters. Here, the test device can perform IV tests on the device, and the control device can analyze the data obtained from the IV tests, etc.
[0173] S1002, perform an IV test on the device.
[0174] In this application, by performing IV tests on the device, the IV curve and corresponding performance parameters can be obtained. Here, since devices with different components, structures, and aging degrees have different equivalent circuits and corresponding IV curves, it is necessary to perform IV tests on fresh devices to obtain the IV curve and corresponding performance parameters in order to determine the equivalent model of the device.
[0175] S1003. Determine the equivalent model of the device.
[0176] In an embodiment of this application, for the performance parameters obtained from the IV test, the equivalent model of the corresponding device can be simulated. Taking the device structure of FTO / NiOX / Perovskite / C60 / ALD-SnOX / Cu as an example, the equivalent model obtained from the test is as follows Figure 2 as shown. As Figure 2 shown, the equivalent circuit of this solar cell includes a current source Bi, a diode D, a first capacitor C, a first resistor R, a parallel resistor R sh and a series resistor R s . For the connection relationship of each equivalent component, please refer to Figure 2 as shown. In addition, at the maximum power output of this solar cell, the voltage on both sides of the positive and negative electrodes is the maximum power voltage, and the current flowing through the series resistor R s is the maximum power current.
[0177] S1004. Place the device under working conditions and continuously monitor the performance parameters of the device.
[0178] In an embodiment of this application, place the device under working conditions to operate, use a test device to perform a maximum power output point scan on the device, and perform an IV scan at a given interval (where the scan time interval is lower than the time interval for the forward bias recovery application), so as to record key performance parameters such as the series resistor R s , short-circuit current Isc, etc. through the IV scan. At the same time, based on the principle of capacitor charge and discharge, the curve of voltage changing with charging time follows formula (1), that is ; when the device is at a fixed bias voltage, the resistance value of the first resistor in the capacitor branch remains fixed, then formula (1) can be evolved into formula (2) at this time, that is, from simplified to get . Here, by fitting the curve of the power rising section under the working condition, the time constant can be obtained. As Figure 4 shown, the time constant can be obtained through fitting, and the goodness of fit R 2It is 0.9452, close to 1, indicating a very good fit and high data credibility.
[0179] S1005, determine the forward bias waveform.
[0180] In the embodiment of the present application, the solar cell is disconnected from the test device, and the solar cell is connected to the repair device to perform forward bias recovery on the solar cell. For components with a fixed system, a fixed recovery process can be adopted. After disconnecting the solar cell from the test device, an external voltage application device can be used to perform forward bias recovery on the components.
[0181] In the embodiment of the present application, the forward bias recovery can be two schemes. Scheme 1: Set the applied amplitude of the forward bias to V MPP + I MPP R s , set the application duration to 3 times the time constant, and the direction is set such that the positive pole of the external power supply is connected to the FTO side, thereby applying a forward bias; that is, the voltage waveform to be applied is set such that the voltage value to be applied at different times is the same, and the voltage value to be applied = (maximum power current value × series resistance value + maximum power voltage value). Scheme 2: Use as the waveform for application, where the initial forward bias (i.e., the initial voltage value) is 0V, the end forward bias (i.e., the termination voltage value) is V MPP + I MPP R s , the time constant has been calculated in step S1004, the application duration is set to 3 times the time constant (3 ), and the direction is set such that the positive pole of the external power supply is connected to the FTO side, thereby applying a forward bias; that is, the change trend of the voltage waveform to be applied conforms to the change trend of the capacitor charging waveform curve.
[0182] S1006, perform forward bias recovery on the device.
[0183] In the embodiment of the present application, in step S1005, the application method of forward bias recovery is determined, and forward bias recovery is applied to the device. The experimental results of Scheme 1 and Scheme 2 are shown in Table 1 and Table 2 above respectively. It can be seen that after two weeks of bias recovery, the devices in the experimental groups corresponding to Scheme 1 and Scheme 2 respectively achieve an absolute power recovery of 25% and 30% relative to the control group devices.
[0184] In the embodiments of the present application, for a perovskite battery with a fixed device structure, it is also possible to analyze the failure process of the device during aging and apply a forward variable bias voltage recovery accordingly. In some embodiments, based on Figure 10 as shown in Figure 11 , the processing method may include:
[0185] S1101, Connect the device to the test device.
[0186] S1102, Perform an IV test on the device.
[0187] S1103, Determine the equivalent model of the device.
[0188] S1104, Place the device under working conditions and continuously monitor the performance parameters of the device.
[0189] S1105, Update the parameters in the equivalent model.
[0190] S1106, Determine the forward bias voltage waveform.
[0191] S1107, Perform a forward bias voltage recovery on the device.
[0192] In the embodiments of the present application, the processes of steps S1101 to S1104 are similar to those of steps S1001 to S1004, and the processes of steps S1106 to S1107 are similar to those of steps S1005 to S1006. That is, based on Figure 10 , Figure 11 step S1105 is added. By periodically testing the IV curve of the device under working conditions, the corresponding performance parameters are obtained, and thus the parameters in the equivalent circuit model obtained in step 804 are updated, so as to further analyze the attenuation of each functional layer of the device under working conditions. For example, for a device that follows the equivalent circuit of a non-single diode model, relative changes in the parameters of each diode and the corresponding capacitor branch will occur, which can be used to analyze the aging mechanism of the device. Furthermore, a targeted forward bias voltage recovery is applied to devices with different aging degrees to restore the performance of the device to the greatest extent.
[0193] The embodiments of the present application provide a processing method for solar cell repair, specifically a forward bias recovery method for perovskite cells based on an equivalent model. Through the above embodiments, the specific implementation of the foregoing embodiments is elaborated in detail. It can be seen that different from the ion blocking layer, illogical bias voltage, etc. in the related art, the processing method proposed in the present application provides a universal application logic based on the equivalent models of different perovskite cells, and specifically applies a forward variable bias voltage (duration, initial positive bias, end positive bias) of a specific waveform, which can adapt to changes in device structure, composition, and aging degree, so as to achieve the recovery of device performance. Compared with the devices aged under working conditions, the absolute recovery rate of the devices with additional bias voltage recovery can reach 30%. And different from the illogical bias voltage and other strategies in the related art, the processing method proposed in the present application can appropriately restore the ion state, thus avoiding unnecessary ion movement damage to the perovskite components caused by the illogical application of the forward bias voltage. That is to say, customized forward bias voltages can be applied to components with different structures, compositions, and aging degrees, thereby avoiding additional damage to the ion movement of the device caused by the illogical bias voltage application.
[0194] The embodiments of the present application provide a computer-readable storage medium storing a computer program, and when the computer program is executed by at least one processor, the steps of the method described in any one of the foregoing embodiments are implemented.
[0195] The embodiments of the present application further provide a computer program product, including a computer program or instruction, and when the computer program or instruction is executed by a processor, the steps of the method described in any one of the foregoing embodiments are implemented.
[0196] It should be noted here that the descriptions of the above storage medium and device embodiments are similar to those of the above method embodiments and have similar beneficial effects to the method embodiments. For the technical details not disclosed in the storage medium and device embodiments of the present application, please refer to the descriptions of the method embodiments of the present application for understanding.
[0197] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system, or a computer program product, etc. Therefore, the present application can adopt the form of a hardware embodiment, a software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk memories and optical memories, etc.) containing computer-usable program codes.
[0198] This application is described with reference to the flowcharts and / or block diagrams of methods, apparatuses (systems), and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram, as well as the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, such that the instructions executed by the processor of the computer or other programmable data processing devices generate means for implementing the functions specified in one flow Figure 1 or in one or more flows and / or blocks Figure 1 or in one or more blocks.
[0199] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing devices to work in a specific manner, such that the instructions stored in the computer-readable memory generate a manufactured article including instruction means that implement the functions specified in one flow Figure 1 or in one or more flows and / or blocks Figure 1 or in one or more blocks.
[0200] These computer program instructions can also be loaded onto a computer or other programmable data processing devices, such that a series of operating steps are executed on the computer or other programmable devices to generate a computer-implemented process, and thus the instructions executed on the computer or other programmable devices provide steps for implementing the functions specified in one flow Figure 1 or in one or more flows and / or blocks Figure 1 or in one or more blocks.
[0201] It should be noted that in this application, the terms "including", "comprising", or any other variant thereof are intended to cover non-exclusive inclusion, such that a process, method, product, or apparatus including a series of elements not only includes those elements but also includes other elements not explicitly listed, or further includes elements inherent to such process, method, product, or apparatus. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, product, or apparatus including such element.
[0202] The serial numbers of the embodiments of the present application above are only for description and do not represent the superiority or inferiority of the embodiments.
[0203] The methods disclosed in several method embodiments provided by the present application can be arbitrarily combined without conflict to obtain new method embodiments.
[0204] The features disclosed in several product embodiments provided by the present application can be arbitrarily combined without conflict to obtain new product embodiments.
[0205] The features disclosed in several method or device embodiments provided by the present application can be arbitrarily combined without conflict to obtain new method embodiments or device embodiments.
[0206] As mentioned above, it is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should all be covered within the protection scope of the present application.
Claims
1. A processing method for solar cell repair, characterized in that, The processing method includes: Determining the performance parameters of the solar cell; Performing equivalent model fitting according to the performance parameters to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch; Determining the duration to be applied and the voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters; wherein, the duration to be applied and the voltage waveform to be applied are used to perform forward bias recovery on the solar cell to repair the solar cell.
2. The processing method according to claim 1, wherein The determining the duration to be applied and the voltage waveform to be applied to the solar cell according to the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters includes: Determining the duration to be applied according to the first capacitance value and the first resistance value; Determining the voltage waveform to be applied according to the series resistance value and the maximum power parameter.
3. The processing method according to claim 2, wherein The determining the duration to be applied according to the first capacitance value and the first resistance value includes: Performing a multiplication operation on the first capacitance value and the first resistance value to obtain a time constant; Setting the duration to be applied as the product of the time constant and a preset value.
4. The processing method according to claim 2, characterized in that The determining the voltage waveform to be applied according to the series resistance value and the maximum power parameter includes: Determining an initial voltage value; Determining a termination voltage value according to the series resistance value and the maximum power parameter; Generating the voltage waveform to be applied according to the initial voltage value and the termination voltage value, and the change trend of the voltage waveform to be applied conforms to the change trend of the capacitance charging waveform curve.
5. The processing method according to claim 4, characterized in that, The maximum power parameter includes a maximum power voltage value and a maximum power current value; correspondingly, determining the termination voltage value according to the series resistance value and the maximum power parameter includes: Performing an addition operation on the product of the maximum power current value and the series resistance value and the maximum power voltage value to obtain the termination voltage value.
6. The processing method according to claim 2, characterized in that The determining the voltage waveform to be applied according to the series resistance value and the maximum power parameter includes: Determining a target applied voltage value according to the series resistance value and the maximum power parameter; Setting the applied voltage values of the voltage waveform to be applied at different times to be equal to the target applied voltage value.
7. The processing method according to any one of claims 1 to 6, characterized in that, After repairing the solar cell, the processing method further includes: Determining the updated performance parameters based on a preset time interval; Performing equivalent model fitting according to the updated performance parameters to determine the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model; Determining the updated duration to be applied and the updated voltage waveform to be applied according to the series resistance value, the first capacitance value, and the first resistance value in the updated equivalent model and the updated maximum power parameter; wherein, the updated duration to be applied and the updated voltage waveform to be applied are used to perform the next forward bias recovery on the solar cell.
8. The processing method according to any one of claims 1 to 6, characterized in that, The time interval for the volt-ampere characteristic test of the solar cell is less than the time interval for the forward bias recovery of the solar cell.
9. A processing device for solar cell repair, characterized in that, The processing device includes a determination unit, a modeling unit, and a processing unit, where: The determination unit is configured to determine the performance parameters of the solar cell; The modeling unit is configured to perform equivalent model fitting based on the performance parameters to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch; The processing unit is configured to determine the duration to be applied and the voltage waveform to be applied to the solar cell based on the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters; wherein, the duration to be applied and the voltage waveform to be applied are used to perform forward bias recovery on the solar cell to repair the solar cell.
10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the processing method for solar cell repair according to any one of claims 1 to 8.
11. A repair system for a solar cell, characterized in that, The repair system includes a solar cell, a control device, a test device, and a repair device. The test device is connected to the solar cell, and the repair device is respectively connected to the control device and the solar cell; where: The test device is configured to provide a voltage signal to the solar cell, perform a volt-ampere characteristic test on the solar cell, obtain the current signal generated by the solar cell, and send the voltage signal and the current signal to the control device; The control device is configured to determine the performance parameters of the solar cell based on the voltage signal and the current signal; perform equivalent model fitting according to the performance parameters to determine the series resistance value in the equivalent model of the solar cell and the first capacitance value and the first resistance value in the capacitance branch; and determine the duration to be applied and the voltage waveform to be applied to the solar cell based on the first capacitance value, the first resistance value, the series resistance value, and the maximum power parameter in the performance parameters; and send the duration to be applied and the voltage waveform to be applied to the repair device; The repair device is configured to perform forward bias recovery on the solar cell according to the duration to be applied and the voltage waveform to be applied to repair the solar cell.
12. The repair system according to claim 11, wherein, The repair system further includes a signal collection device, and the signal collection device is respectively connected to the test device and the control device; where: The signal collection device is configured to receive the voltage signal sent by the test device and the current signal generated by the solar cell, and send the voltage signal and the current signal to the control device so that the control device can determine the performance parameters of the solar cell.
13. The repair system according to claim 11 or 12, characterized in that, The repair system further includes a light simulation device, and the light simulation device is connected to the control device; where: The light simulation device is configured to receive the control signal sent by the control device and perform light simulation on the solar cell according to the control signal.
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