Laser processing method, apparatus, device, and storage medium

Abstract

The application discloses a laser processing method, device, equipment and storage medium, relates to the technical field of semiconductor processing, and the laser processing method comprises the following steps: performing spatial phase modulation on to-be-processed laser based on a spatial light modulator to obtain a regular hexagon light spot; focusing the regular hexagon light spot through an objective lens to obtain a focused light spot; and moving a semiconductor crystal bar through a processing platform to form a modified layer in the semiconductor crystal bar by the focused light spot. Since the regular hexagon light spot is obtained by performing spatial phase modulation on the to-be-processed laser through the spatial light modulator, the processing efficiency of the semiconductor crystal bar is improved, the semiconductor crystal bar is moved for processing through the processing platform, a column of modified points is formed on the semiconductor crystal bar, the modified points are connected to each other through induced cracks between the modified points, a loose modified layer is formed, and the difficulty in stripping the semiconductor material is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor processing, and particularly relates to a laser processing method, device, equipment and storage medium. BACKGROUND

[0002] SiC is a semiconductor material with excellent performance, but because of its high hardness (Mohs hardness 9.2), it is difficult to process. SiC crystal bar slicing is an important link in the production process of SiC semiconductor components. SiC crystal bar needs to be sliced into SiC wafers to be used for further processing.

[0003] The existing SiC crystal bar processing method usually adopts a Gaussian focused spot, but due to the size and length of the SiC material, the processing efficiency is low. SUMMARY

[0004] The main purpose of the present application is to provide a laser processing method, device, equipment and storage medium, which aims to solve the technical problem of low efficiency of the existing SiC laser processing scheme.

[0005] To achieve the above purpose, the present application provides a laser processing method, which comprises:

[0006] spatial phase modulation of the laser to be processed based on a spatial light modulator to obtain a regular hexagon spot;

[0007] focusing the regular hexagon spot through an objective lens to obtain a focused spot;

[0008] controlling the movement of the semiconductor crystal bar through a processing platform, so that the focused spot forms a modified layer in the semiconductor crystal bar.

[0009] In an embodiment, the step of spatial phase modulation of the laser to be processed based on a spatial light modulator to obtain a regular hexagon spot comprises:

[0010] obtaining a target hexagon pattern to be processed;

[0011] converting the target hexagon pattern into a phase map;

[0012] superimposing the phase map onto the laser to be processed based on a spatial light modulator to obtain a spatial phase modulated regular hexagon spot.

[0013] In an embodiment, the step of superimposing the phase map onto the laser to be processed based on a spatial light modulator to obtain a spatial phase modulated regular hexagon spot comprises:

[0014] performing Fourier transform and inverse Fourier transform on the superposition phase corresponding to the phase map by a spatial light modulator to obtain a target superposition phase;

[0015] superimposing the target superposition phase on the laser to be processed to obtain a spatial phase modulated regular hexagonal light spot.

[0016] In an embodiment, the step of performing Fourier transform and inverse Fourier transform on the superposition phase corresponding to the phase map by a spatial light modulator to obtain a target superposition phase comprises:

[0017] obtaining a first complex amplitude of the superposition phase corresponding to the phase map;

[0018] performing Fourier transform on the first complex amplitude to obtain a second complex amplitude; the second complex amplitude is a complex amplitude of a focal plane;

[0019] if the second complex amplitude satisfies an iteration termination condition, obtaining a target superposition phase based on the second complex amplitude.

[0020] In an embodiment, the formula for obtaining the first complex amplitude of the superposition phase corresponding to the phase map is as follows:

[0021]

[0022] wherein V j is the first complex amplitude, A j is an initial amplitude of the laser to be processed, and is the superposition phase.

[0023] In an embodiment, the step of controlling the movement of the semiconductor crystal rod by a processing platform so that the focused light spot forms a modification layer in the semiconductor crystal rod comprises:

[0024] controlling the movement of the semiconductor crystal rod by a processing platform so that the focused light spot forms a modification point matrix in the semiconductor crystal rod;

[0025] generating a guide crack through the modification point matrix to obtain a modification layer.

[0026] In addition, to achieve the above-mentioned purpose, the present application further provides a laser processing device, which comprises:

[0027] a laser modulation module configured to perform spatial phase modulation on a laser to be processed based on a spatial light modulator to obtain a regular hexagonal light spot;

[0028] a laser focusing module configured to focus the regular hexagonal light spot by an objective lens to obtain a focused light spot;

[0029] The laser processing module is used for controlling the movement of the semiconductor crystal bar through the processing platform, so that the focused light spot forms a modified layer in the semiconductor crystal bar.

[0030] In addition, to achieve the above-mentioned purpose, the application also provides a laser processing device, which comprises a memory, a processor and a computer program stored in the memory and executable on the processor, and the computer program is configured to implement the steps of the laser processing method as described above.

[0031] In addition, to achieve the above-mentioned purpose, the application also provides a storage medium, which is a computer readable storage medium, and the storage medium stores a computer program, and the computer program is executed by a processor to implement the steps of the laser processing method as described above.

[0032] In addition, to achieve the above-mentioned purpose, the application also provides a computer program product, which comprises a computer program, and the computer program is executed by a processor to implement the steps of the laser processing method as described above.

[0033] The one or more technical solutions provided by the application have at least the following technical effects:

[0034] The application obtains a regular hexagonal light spot by spatial phase modulation of the to-be-processed laser based on a spatial light modulator, focuses the regular hexagonal light spot through an objective lens to obtain a focused light spot, and controls the movement of the semiconductor crystal bar through a processing platform, so that the focused light spot forms a modified layer in the semiconductor crystal bar. Since the regular hexagonal light spot is obtained by spatial phase modulation of the to-be-processed laser through the spatial light modulator, the processing efficiency of the semiconductor crystal bar is improved, and the movement of the semiconductor crystal bar is controlled through the processing platform to form a column of modified points on the semiconductor crystal bar. The modified points are connected to each other through induced cracks between the modified points to form a loose modified layer, which is conducive to reducing the difficulty of peeling the semiconductor material. BRIEF DESCRIPTION OF DRAWINGS

[0035] The accompanying drawings incorporated in and forming a part of the specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the application.

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the application or the prior art, the accompanying drawings needed to be used in the embodiments or prior art description will be briefly introduced. Obviously, for those skilled in the art, other drawings can also be obtained without creative labor.

[0037] Figure 1 The flowchart provided for the first embodiment of the laser processing method of the application is shown in the figure;

[0038] Figure 2 A flowchart provided for the second embodiment of the laser processing method of the present application;

[0039] Figure 3 A light path schematic diagram of the laser processing in an implementation of the present application;

[0040] Figure 4 A schematic diagram of the overall flow of the laser processing in an implementation of the present application;

[0041] Figure 5 A perspective view of the processing in an implementation of the present application;

[0042] Figure 6 A front view of the processing in an implementation of the present application;

[0043] Figure 7 A flowchart provided for the third embodiment of the laser processing method of the present application;

[0044] Figure 8 A schematic diagram of the module structure of the laser processing device of the embodiments of the present application;

[0045] Figure 9 A schematic diagram of the device structure of the hardware running environment involved in the laser processing method of the embodiments of the present application.

[0046] The purposes, functional features and advantages of the present application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0047] It should be understood that the specific embodiments described herein are merely intended to explain the technical solutions of the present application, and are not intended to limit the present application.

[0048] In order to better understand the technical solutions of the present application, the following will be described in detail in conjunction with the accompanying drawings and specific embodiments.

[0049] The main solution of the embodiments of the present application is: based on a spatial light modulator, a spatial phase modulation is performed on the laser to be processed to obtain a regular hexagonal light spot; an objective lens is used to focus the regular hexagonal light spot to obtain a focused light spot; a semiconductor crystal rod is moved by a processing platform to form a modified layer in the semiconductor crystal rod.

[0050] It should be noted that since the 4H type SiC crystal is a hexagonal crystal structure formed by the mutual stacking of a tightly arranged layer of Si atoms and a tightly arranged layer of C atoms, before SiC flaking, a laser is used to form a modified layer at a predetermined depth position in the SiC crystal bar. The loose modified layer structure is beneficial to reduce the difficulty of flaking. In the embodiment, a hexagonal laser spot after beam shaping is used for SiC crystal bar modification. Compared with a single-point Gaussian focused spot, the scheme of the present application is more likely to produce induced cracks between the modified points. By connecting the induced cracks between the points, a modified layer is formed.

[0051] It should be noted that the execution subject of the embodiment can be a computing service device with data processing, network communication and program running functions, such as a laser processing control device, an industrial computer, etc., or an electronic device, a virtual device, etc. capable of realizing the above functions. The embodiment and the following embodiments will be described below with the laser processing device (referred to as processing device) as an example.

[0052] Based on this, the embodiment of the present application provides a laser processing method, which refers to Figure 1 , Figure 1 The flowchart of the first embodiment of the laser processing method of the present application is provided.

[0053] In the embodiment, the laser processing method includes steps S10-S30:

[0054] Step S10, based on the spatial phase modulation of the spatial light modulator to the laser to be processed, a hexagonal spot is obtained.

[0055] It should be noted that spatial phase modulation is a technology for regulating and changing the phase of light waves. Through the spatial light modulator, the spatial phase modulation of the laser to be processed can be realized, and then the shaping of the laser is realized, a hexagonal spot is obtained, the efficiency of laser processing is improved, and the production cost is reduced.

[0056] It can be understood that the spatial light modulator (Spatial Light Modulator, SLM) is a dynamic component that can change the amplitude, polarization and phase of incident light under the control of an external signal. The input of this external signal can be controlled by the processing device of the embodiment of the present application, or it can be controlled by other devices, which is not limited by the embodiment of the present application.

[0057] It should be noted that after the spatial phase modulation of the spatial light modulator to the laser to be processed, a hexagonal spot can be obtained. Due to the uniformity and close arrangement of the hexagonal spot, it is helpful to improve the efficiency of laser processing, and at the same time, it can ensure the uniform processing of the material surface and reduce the surface defects and roughness.

[0058] Step S20, focusing the regular hexagonal light spot through the objective lens to obtain a focused light spot.

[0059] It should be noted that the objective lens is a kind of workpiece that can focus the laser beam into a region to improve the energy density in the light spot. By focusing the regular hexagonal light spot through the objective lens, a focused light spot with higher energy density can be obtained, which is also in the form of a regular hexagon. By focusing the regular hexagonal light spot, it is helpful to realize high-precision material processing.

[0060] In the embodiments of the present application, the selection of the focusing power of the objective lens can be determined according to the specific circumstances in actual application, which is not limited in the embodiments of the present application. In some embodiments of the present application, a 50x objective lens can be used for focusing to form modification points at a predetermined depth position in the SiC crystal rod, and then to realize the modification of the SiC crystal rod. The modification layer is formed by the induced cracks between the modification points, which is convenient for subsequent processing.

[0061] Step S30, moving the semiconductor crystal rod by the processing platform to form a modification layer in the semiconductor crystal rod by the focused light spot.

[0062] It should be noted that the above-mentioned semiconductor crystal rod can be a SiC crystal rod, and the above-mentioned processing platform can be a work platform for placing the semiconductor crystal rod. In actual application, the processing equipment can control the movement of the processing platform carrying the semiconductor crystal rod, so that the focused light spot can form a row of equidistant modification points inside the semiconductor crystal rod.

[0063] It should be explained that in the embodiments of the present application, the laser processing is carried out by the focused light spot in parallel with the rectifier. The shape of the focused light spot in the form of a regular hexagon is consistent with the arrangement of atoms in the single-layer atomic structure of the SiC crystal, and the modification points formed are more likely to produce induced cracks in the xy plane, thereby forming a modification layer structure with more loose texture.

[0064] In the embodiments of the present application, the regular hexagonal light spot is obtained by spatial phase modulation of the to-be-processed laser based on the spatial light modulator, the focused light spot is obtained by focusing the regular hexagonal light spot through the objective lens, and the semiconductor crystal rod is moved by the processing platform to form a modification layer in the semiconductor crystal rod. Since the regular hexagonal light spot is obtained by spatial phase modulation of the to-be-processed laser based on the spatial light modulator, the processing efficiency of the semiconductor crystal rod is improved, and the movement of the semiconductor crystal rod by the processing platform realizes the formation of a row of modification points on the semiconductor crystal rod. The induced cracks between the modification points are connected to each other to form a loose modification layer, which is conducive to reducing the difficulty of peeling the semiconductor material.

[0065] Based on the first embodiment of the present application, in the second embodiment of the present application, the same or similar contents as the above-mentioned embodiment one can refer to the above introduction, and the subsequent will not be described in detail. On this basis, please refer to Figure 2 , Figure 2 The flowchart provided for the second embodiment of the laser processing method of the present application is shown in the figure.

[0066] In the embodiment of the present application, as shown in Figure 2 , the step of spatial phase modulation of the to-be-processed laser based on the spatial light modulator to obtain a regular hexagon light spot includes:

[0067] Step S11, obtaining a target hexagonal pattern to be processed;

[0068] Step S12, converting the target hexagonal pattern into a phase map;

[0069] Step S13, superimposing the phase map to the to-be-processed laser based on the spatial light modulator to obtain a regular hexagon light spot after spatial phase modulation.

[0070] As shown in Figure 3 and Figure 4 , Figure 3 is a schematic diagram of the optical path of the laser processing in one implementation manner of the present application, Figure 4 is a schematic diagram of the overall process of the laser processing in one implementation manner of the present application.

[0071] In the embodiment of the present application, the generation of the to-be-processed laser is performed by the laser, and the to-be-processed laser is output by the laser output head. Through the PBS beam splitter, the to-be-processed laser output by the laser output head can be split into beams, so as to modulate, demodulate and separate the to-be-processed laser. After passing through the PBS beam splitter, the polarization direction of the to-be-processed laser can be changed by the half-wave plate. By matching the PBS beam splitter and the half-wave plate, the polarization direction and power of the to-be-processed laser can be ensured to meet the processing requirements, thereby improving the reliability and accuracy of the laser processing.

[0072] It can be understood that after the to-be-processed laser passes through the PBS beam splitter and the half-wave plate, the beam diameter and the beam divergence angle of the to-be-processed laser can be changed by the beam expander. By adjusting the beam expander, the laser beam can become a collimated light speed, so that a high-power density light spot can be obtained by the focusing mirror. After the to-be-processed laser is expanded by the beam expander, it can be reflected by the mirror to the hidden cutting head containing the spatial light modulator.

[0073] It should be understood that the user can select a target hexagonal pattern to be processed through the laser multi-focus parallel processing device, convert the target hexagonal pattern into a phase map, and load the phase map to a spatial light modulator. The spatial light modulator can modulate the input laser to be processed based on the phase map to achieve phase superposition of the laser, thereby obtaining a regular hexagonal light spot.

[0074] It can be understood that after obtaining the regular hexagonal light spot through the spatial light modulator, precise focusing of the regular hexagonal light spot can be achieved through an objective lens (such as a 50x objective lens), thereby achieving real-time regulation and control of the focused light spot, so that the generated focused light spot has higher energy density.

[0075] It should be explained that by controlling the movement of the semiconductor crystal rod through the processing platform (xyz platform), a column of modified points can be generated on the semiconductor crystal rod, so as to preform a modified layer in the semiconductor crystal rod (such as a SiC crystal rod) for subsequent slicing process. For details, please refer to Figure 4 and Figure 5 , Figure 4 is a processing perspective view in an implementation manner of the present application, Figure 5 is a processing front view in an implementation manner of the present application.

[0076] It should be noted that in the embodiments of the present application, the user can first determine the pattern to be processed, that is, the target hexagonal pattern to be processed. The target hexagonal pattern to be processed is converted through a software algorithm to obtain a phase map. The specific software algorithm used in the embodiments of the present application is not limited, and can be selected according to the specific application.

[0077] It should be explained that when the phase map is obtained, the processing device can load the phase map to the spatial light modulator, and superimpose the phase map to the laser to be processed through the spatial light modulator, thereby obtaining a spatial phase modulated regular hexagonal light spot.

[0078] In some embodiments of the embodiments of the present application, the step of superimposing the phase map to the laser to be processed based on the spatial light modulator to obtain a spatial phase modulated regular hexagonal light spot comprises:

[0079] performing Fourier transform and inverse Fourier transform on the superimposed phase corresponding to the phase map through the spatial light modulator to obtain a target superimposed phase;

[0080] superimposing the target superimposed phase to the laser to be processed to obtain a spatial phase modulated regular hexagonal light spot.

[0081] In the embodiments of this application, Fourier transform and inverse Fourier transform can be used to process the superimposed phase corresponding to the phase map to obtain the final target superimposed phase. Through Fourier transform, the frequency components of the laser signal can be analyzed.

[0082] Understandably, the inverse Fourier transform, or the reverse of the Fourier transform, can be used to convert signals in the frequency domain into signals in the time domain. In laser processing, the inverse Fourier transform can be used to reconstruct the laser signal to achieve specific processing goals.

[0083] It should be noted that by iterating over the superimposed phase corresponding to the phase map, the target superimposed phase on the target plane can be obtained. Through spatial light modulators, Fourier transforms, and inverse Fourier transforms, the laser beam to be processed can be transformed into a regular hexagonal spot, thereby enabling the processing of the workpiece.

[0084] It should be explained that, in the spatial light modulator of this application embodiment, the method for implementing Fourier transform can be to provide an array of convex lenses in the spatial light modulator. The convex lenses in the spatial light modulator can be used to perform a Fourier transform on the laser to be processed.

[0085] It is understandable that the focusing process of a convex lens can be regarded as a mapping of spatial information from one plane to another. By focusing the light rays from different parts onto different points, the transformation of spatial information from the phase map to the focusing plane is achieved.

[0086] Specifically, in some embodiments of this application, the step of performing Fourier transform and inverse Fourier transform on the superimposed phase corresponding to the phase map using a spatial light modulator to obtain the target superimposed phase includes: obtaining a first complex amplitude of the superimposed phase corresponding to the phase map; performing a Fourier transform on the first complex amplitude to obtain a second complex amplitude; the second complex amplitude is the complex amplitude of the focusing plane; if the second complex amplitude satisfies the iteration termination condition, then the target superimposed phase is obtained based on the second complex amplitude.

[0087] It should be noted that the formula for obtaining the first complex amplitude of the superimposed phase corresponding to the phase diagram can be as follows:

[0088]

[0089] Among them, V j For the first complex amplitude, A j (x,y) represents the initial amplitude. This is the superimposed phase corresponding to the phase diagram.

[0090] In some embodiments of this application, A j The value of (x, y) can be 1. Given... An initial value, after Fourier transform, the complex amplitude of the focusing plane (i.e., the second complex amplitude) can be obtained.

[0091] Wherein, the focusing plane can be considered as the plane after Fourier transform, i.e., the plane corresponding to the converted hexagonal spot.

[0092] Specifically, the obtained second complex amplitude U i Can be expressed by the following formula:

[0093]

[0094] Wherein, A i (x,y) is the amplitude after Fourier transform, is the phase after Fourier transform.

[0095] It should be noted that when the second complex amplitude does not satisfy the iteration condition, the inverse Fourier transform needs to be performed on the second complex amplitude to obtain a new first complex amplitude V j Through repeated Fourier transform and inverse Fourier transform, the iteration of the first complex amplitude and the second complex amplitude is performed, and finally a second complex amplitude U m satisfying the iteration condition can be obtained, at this time, the second complex amplitude U m corresponding phase That is, the target superposition phase finally calculated by iteration.

[0096] The embodiment of the application obtains the target hexagonal pattern to be processed; converts the target hexagonal pattern into a phase map; superimposes the phase map on the laser to be processed based on the spatial light modulator, and obtains a spatial phase modulated hexagonal spot. Since the hexagonal spot is generated to realize laser processing of the semiconductor crystal rod, the processing efficiency is improved.

[0097] Based on the first embodiment and / or the second embodiment of the application, in the third embodiment of the application, the same or similar contents as the above-mentioned embodiment one and / or embodiment two can be referred to the above introduction, and will not be described in detail. On this basis, please refer to Figure 7 , Figure 7 The flowchart provided by the third embodiment of the application laser processing method.

[0098] As Figure 7 shown in the embodiment of the application, the step of controlling the movement of the semiconductor crystal rod by the processing platform to form a modified layer in the semiconductor crystal rod by the focusing spot includes:

[0099] Step S31, controlling the movement of the semiconductor crystal rod by the processing platform to form a modified point matrix in the semiconductor crystal rod by the focusing spot;

[0100] Step S32, generating a guided crack through the modified point matrix to obtain a modified layer.

[0101] It should be noted that the processing device can control the movement of the processing platform to carry the movement of the semiconductor crystal bar, so that the focused light spot can form a column of equidistant matrix in the semiconductor crystal bar, and these equidistant matrixes are also modified point matrixes. Through the induced cracks between these modified point matrixes, the guided cracks can be generated by mutual association, and then the modified layer is formed in the semiconductor crystal bar. In the embodiments of the present application, the point spacing on each column can be controlled by controlling the movement speed of the processing platform and the frequency of the laser light output, and the column spacing can be controlled by controlling the movement distance of the processing platform. The specific control method can be selected according to the actual application, and the embodiments of the present application do not limit it.

[0102] The embodiments of the present application control the movement of the semiconductor crystal bar through the processing platform, so that the focused light spot forms a modified point matrix in the semiconductor crystal bar; and a guided crack is generated through the modified point matrix to obtain a modified layer. Since a loose modified layer is formed in the semiconductor crystal bar, the slicing efficiency of the semiconductor crystal bar is improved.

[0103] It should be noted that the above examples are only used to understand the present application and do not constitute a limitation on the laser processing method of the present application. More forms of simple transformation based on this technical concept are within the protection scope of the present application.

[0104] The present application also provides a laser processing device, please refer to Figure 8 , Figure 8 is a module structure schematic diagram of the laser processing device of the embodiments of the present application, the laser processing device comprises:

[0105] The laser modulation module 10 is used for spatial phase modulation of the laser to be processed based on the spatial light modulator to obtain a regular hexagonal light spot;

[0106] The laser focusing module 20 is used for focusing the regular hexagonal light spot through the objective lens to obtain a focused light spot;

[0107] The laser processing module 30 is used for controlling the movement of the semiconductor crystal bar through the processing platform, so that the focused light spot forms a modified layer in the semiconductor crystal bar.

[0108] The laser processing device provided by the present application adopts the laser processing method in the above embodiments, which can solve the technical problem of low efficiency of the existing SiC laser processing scheme. Compared with the prior art, the beneficial effects of the laser processing device provided by the present application are the same as those of the laser processing method provided by the above embodiments, and other technical features in the laser processing device are the same as those disclosed in the above embodiments. Therefore, it is not repeated here.

[0109] The application provides a laser processing device, comprising: at least one processor; and a memory connected with the at least one processor; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to enable the at least one processor to perform the laser processing method in the first embodiment.

[0110] Reference is made below in conjunction with Figure 9 which shows a structural diagram of a laser processing device suitable for implementing the embodiments of the application. The laser processing device in the embodiments of the application can include, but is not limited to, mobile terminals such as mobile phones, notebook computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Portable Application Descriptions), PMPs (Portable Media Players), vehicle-mounted terminals (for example, vehicle-mounted navigation terminals), and the like, and fixed terminals such as digital TVs, desktop computers, and the like. Figure 9 The laser processing device shown is merely an example and should not bring any limitation to the functions and use range of the embodiments of the application.

[0111] As Figure 9As shown, the laser processing apparatus can include a processing device 1001 (e.g., a central processing unit, a graphics processing unit, etc.) that can perform various appropriate actions and processes in accordance with a program stored in a read only memory (ROM) 1002 or a program loaded from a storage device 1003 into a random access memory (RAM) 1004. Various programs and data required for operation of the laser processing apparatus are also stored in the RAM 1004. The processing device 1001, the ROM 1002, and the RAM 1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Generally, the following systems can be connected to the I / O interface 1006: an input device 1007 including, for example, a touch screen, a touch pad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; an output device 1008 including, for example, a liquid crystal display (LCD), a speaker, a vibrator, etc.; the storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 can allow the laser processing apparatus to communicate wirelessly or by wire with other devices to exchange data. Although the laser processing apparatus having various systems is shown in the figure, it should be understood that all of the shown systems are not required to be implemented or possessed. More or less systems can be alternatively implemented or possessed.

[0112] In particular, the processes described above with reference to the flowcharts can be implemented as a computer software program according to embodiments of the present disclosure. For example, embodiments of the present disclosure include a computer program product comprising a computer program carried on a computer readable medium, the computer program containing program code for performing the methods shown in the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network by a communication device, or installed from the storage device 1003, or installed from the ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the methods of embodiments of the present disclosure are performed.

[0113] The laser processing apparatus provided by the present disclosure adopts the laser processing method in the above embodiments, and can solve the technical problem of low efficiency of the existing SiC laser processing scheme. Compared with the prior art, the laser processing apparatus provided by the present disclosure has the same beneficial effects as the laser processing method provided by the above embodiments, and other technical features in the laser processing apparatus are the same as the features disclosed in the previous embodiment method, which will not be repeated here.

[0114] It should be understood that portions of the application disclosed can be implemented in hardware, software, firmware, or combinations thereof. In the description of the embodiments above, specific features, structures, materials or characteristics can be combined in any suitable manner in one or more embodiments or examples.

[0115] The above description is merely illustrative of the application and is not intended to limit the scope of the application. Any modifications or equivalents of the application should be construed as falling within the scope of the application. The scope of the application should be determined by the appended claims.

[0116] The application provides a computer readable storage medium having stored thereon computer readable program instructions (i.e., a computer program) for performing the laser processing method in the above-described embodiments.

[0117] The computer readable storage medium provided by the application may, for example, be a U disk, but is not limited to an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, system, or device, or any combination of the above. More specific examples of the computer readable storage medium can include, but are not limited to, an electrical connection having one or more conductive wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present embodiment, the computer readable storage medium can be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, system, or device. The program code contained on the computer readable storage medium can be transmitted in any suitable medium, including but not limited to electrical wire, optical cable, RF (Radio Frequency), etc., or any suitable combination of the above.

[0118] The above-described computer readable storage medium can be included in the laser processing device; or can exist separately and not be assembled into the laser processing device.

[0119] The above-described computer readable storage medium carries one or more programs, which, when executed by the laser processing device, cause the laser processing device to:

[0120] The laser to be processed is spatially phase-modulated based on a spatial light modulator to obtain a regular hexagon light spot;

[0121] The regular hexagon light spot is focused by an objective lens to obtain a focused light spot;

[0122] The focused light spot is formed in the semiconductor crystal bar to form a modified layer in the semiconductor crystal bar by controlling the movement of the semiconductor crystal bar by a processing platform.

[0123] Computer program code for carrying out operations of the present application can be written in any combination of one or more programming languages, including an object oriented programming language such as Java, Smalltalk, C++ or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code can execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the latter scenario, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or the connection can be made to an external computer (for example, through the Internet using an Internet Service Provider).

[0124] The flow and block diagrams in the drawings show the architectural, functional and operational views of possible implementations of systems, methods and computer program products according to the various embodiments of the present application. In this regard, each block in the flow and block diagrams can represent a module, a segment, or a portion of code that comprises one or more executable instructions for implementing the specified logical function. It should also be noted that in some alternative implementations, the functions noted in the blocks can occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently or in the reverse order, depending on the functionality involved. It will also be noted that each block in the block and / or flow diagrams and combinations of blocks in the block and / or flow diagrams can be implemented by special purpose hardware-based systems that perform the specified functions or operations, or combinations of special purpose hardware and computer instructions.

[0125] The modules involved in the embodiments of the present application can be implemented in software or in hardware. In some cases, the name of the module does not constitute a limitation on the module itself.

[0126] The readable storage medium provided by the application is a computer readable storage medium, which stores computer readable program instructions (i.e. computer programs) for executing the above laser processing method, and can solve the technical problem of low efficiency of the existing SiC laser processing scheme. Compared with the prior art, the beneficial effects of the computer readable storage medium provided by the application are the same as those of the laser processing method provided by the above-mentioned embodiments, and will not be repeated here.

[0127] The application also provides a computer program product comprising a computer program, which, when executed by a processor, implements the steps of the laser processing method as described above.

[0128] The computer program product provided by the application can solve the technical problem of low efficiency of the existing SiC laser processing scheme. Compared with the prior art, the beneficial effects of the computer program product provided by the application are the same as those of the laser processing method provided by the above-mentioned embodiments, and will not be repeated here.

[0129] The above-mentioned is only part of the embodiments of the application, and does not limit the patent scope of the application, and any equivalent structural transformation, direct / indirect application in other related technical fields within the technical concept of the application, and the contents of the specification and drawings are included in the patent protection scope of the application.

Claims

1. A laser processing method, characterized in that, The method is used to process semiconductor crystal rods having a regular hexagonal crystal system structure, and the method includes: Spatial phase modulation of the laser to be processed is performed using a spatial light modulator to obtain a regular hexagonal light spot; the regular hexagonal light spot is a light spot that is consistent with the atomic arrangement of the semiconductor crystal rod; A focused light spot is obtained by focusing the regular hexagonal light spot through an objective lens; The semiconductor crystal rod is moved by controlling the processing platform, so that the focused light spot forms a modified layer inside the semiconductor crystal rod; The step of controlling the movement of the semiconductor crystal rod through a processing platform so that the focused light spot forms a modified layer within the semiconductor crystal rod includes: The semiconductor crystal rod is moved by controlling the processing platform, so that the focused light spot forms an equidistant matrix of modified particles within the semiconductor crystal rod; Guided cracks are generated through the modified particle matrix to obtain the modified layer.

2. The laser processing method as described in claim 1, characterized in that, The step of spatially phase modulating the laser to be processed using a spatial light modulator to obtain a regular hexagonal spot includes: Obtain the target hexagonal pattern to be processed; Convert the target hexagonal pattern into a phase map; The phase map is superimposed onto the laser to be processed using a spatial light modulator to obtain a spatially phase-modulated regular hexagonal light spot.

3. The laser processing method as described in claim 2, characterized in that, The step of superimposing the phase map onto the laser to be processed based on a spatial light modulator to obtain a spatially phase-modulated regular hexagonal spot includes: The target superimposed phase is obtained by performing Fourier transform and inverse Fourier transform on the superimposed phase corresponding to the phase map using a spatial light modulator. The target phase superposition value is applied to the laser to be processed to obtain a spatially phase modulated regular hexagonal spot.

4. The laser processing method as described in claim 3, characterized in that, The step of performing Fourier transform and inverse Fourier transform on the superimposed phase corresponding to the phase map using a spatial light modulator to obtain the target superimposed phase includes: Obtain the first complex amplitude of the superimposed phase corresponding to the phase diagram; Perform a Fourier transform on the first complex amplitude to obtain a second complex amplitude; the second complex amplitude is the complex amplitude of the focusing plane; If the second complex amplitude satisfies the iteration termination condition, the target superposition phase is obtained based on the second complex amplitude.

5. The laser processing method as described in claim 4, characterized in that, The formula for obtaining the first complex amplitude of the superimposed phase corresponding to the phase diagram is as follows: ； in, This is the first complex amplitude. The initial amplitude of the laser to be processed. This is the superimposed phase.

6. A laser processing apparatus, characterized in that, The apparatus is used to process semiconductor crystal rods having a regular hexagonal crystal system structure, and the laser processing apparatus includes: A laser modulation module is used to perform spatial phase modulation on the laser to be processed based on a spatial light modulator to obtain a regular hexagonal light spot; the regular hexagonal light spot is a light spot that is consistent with the atomic arrangement of the semiconductor crystal rod; A laser focusing module is used to focus the regular hexagonal light spot through an objective lens to obtain a focused light spot; A laser processing module is used to control the movement of the semiconductor crystal rod through a processing platform, so that the focused light spot forms a modified layer in the semiconductor crystal rod. The laser processing module is also used to control the movement of the semiconductor crystal rod through the processing platform, so that the focused spot forms an equidistant modified particle matrix within the semiconductor crystal rod; and to generate guiding cracks through the modified particle matrix to obtain a modified layer.

7. A laser processing device, characterized in that, The device includes: a memory, a processor, and a laser processing program stored in the memory and executable on the processor, the laser processing program being configured to implement the steps of the laser processing method as described in any one of claims 1 to 5.

8. A storage medium, characterized in that, The storage medium stores a laser processing program, which, when executed by a processor, implements the steps of the laser processing method as described in any one of claims 1 to 5.

9. A computer program product, characterized in that, The computer program product includes a computer program that, when executed by a processor, implements the steps of the laser processing method as described in any one of claims 1 to 5.

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