Silicon wafer cut surface passivation process and device
By using a combined process of hydrogen and alumina in the cut-off surface of the silicon wafer, the hanging bonds are neutralized and the alumina film is formed, the charge recombination problem caused by hanging bonds on the cut-off surface of the silicon wafer is solved, and the efficiency and stability of the battery are improved.
Patent Information
- Application Number
- CN202411983656.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-04-15
AI Technical Summary
In the prior art, there are hanging bonds on the cut surface formed after the silicon wafer is cut, resulting in the formation of the charge carrier composite center and affecting the battery efficiency and life.
A silicon wafer cutting surface passivation process is adopted. By stacking the silicon wafer in a sealed passivation chamber, heating and decomposing hydrogen and aluminum oxide are passed through the heated decomposed after vacuuming. The hydrogen atoms or hydrogen ions are neutralized with the hanging bonds on the cut surface of the silicon wafer, and the aluminum oxide molecules form an alumina film, which works together to passivate the cut surface.
Effectively neutralize the hanging bonds on the cutting surface, form a stable hydrogen passivation layer and alumina film, reduce charge recombination, improve the efficiency and stability of the battery cell, and extend its service life.
Smart Images
Figure CN119824405A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of battery string production, and in particular to a silicon slice cut surface passivation process and device. Background Art
[0002] The microscopic damage on the edge of the cell section includes not only physical cracks, but also lattice defects introduced by the cutting process. These defects provide recombination centers for charge carriers, that is, electrons and holes meet and cancel each other out on the cut surface, resulting in power loss. There are hanging parts on the cut surface after the whole silicon wafer is cut, forming recombination centers. High-efficiency crystalline silicon solar cells use good surface passivation technology to reduce the surface activity of semiconductors and reduce the surface recombination rate. The main way is to saturate the dangling bonds on the semiconductor surface, reduce the surface activity, increase the surface cleaning process, and avoid the formation of recombination centers due to the introduction of impurities in the surface layer, thereby reducing the surface recombination rate of minority carriers. The hanging parts will become the recombination center of carriers, thereby affecting the minority carrier lifetime of the material.
[0003] In the prior art, the technology for silicon wafer interface passivation mostly adopts physical vapor deposition (PVD), which is a technology that forms a film layer by evaporating or sputtering a coating material onto the surface of a cell. The film layer structure of this coating method is dense and has high precision. However, for the cell formed after the silicon wafer is cut into multiple silicon wafers, only a single coating material is used for coating, which can improve the cell efficiency to a very limited extent, and the effect is not obvious. Summary of the invention
[0004] In order to solve the above technical problems, the present invention provides a silicon wafer cut surface passivation process and device.
[0005] In a first aspect, the present application provides a silicon wafer cut surface passivation process, comprising: providing a plurality of cut silicon wafers to be stacked and placed in a sealed passivation chamber, with the cut surfaces of the plurality of silicon wafers facing the same side;
[0006] Evacuate the passivation chamber;
[0007] Introducing hydrogen into the passivation chamber, and heating the hydrogen to a first heating temperature so that the hydrogen is heated and decomposed into hydrogen atoms or hydrogen ions;
[0008] The solid aluminum oxide is decomposed into aluminum oxide molecules through heat treatment at a second heating temperature. The hydrogen atoms or hydrogen ions act together with the aluminum oxide molecules on the cut surface of the silicon wafer. The hydrogen atoms or hydrogen ions are used to neutralize the hanging parts on the cut surface of the silicon wafer. The aluminum oxide molecules are used to form an aluminum oxide film on the cut surface of the silicon wafer.
[0009] Furthermore, while the passivation chamber is evacuated, a protective gas is introduced into the passivation chamber.
[0010] Furthermore, the process of introducing hydrogen into the passivation chamber also includes: while heat treating the hydrogen, allowing the hydrogen to pass through a metal catalyst disposed in the passivation chamber, so that hydrogen molecules adsorbed on the metal catalyst are decomposed into hydrogen atoms or hydrogen ions.
[0011] Furthermore, the metal catalyst is electrically heated to a first heating temperature, so that the heat of the metal catalyst acts on the hydrogen passing through the metal catalyst while the metal catalyst is heated.
[0012] Furthermore, the metal catalyst is any one of metal tungsten, molybdenum, nickel and platinum.
[0013] Furthermore, the metal catalyst is used to electrically heat the solid alumina to the second heating temperature, and the second heating temperature is the same as the first heating temperature.
[0014] Furthermore, the solid aluminum oxide is contained in a loading tank made of the metal catalyst, and two ends of the loading tank are respectively connected to two different electrodes.
[0015] Furthermore, the channel for delivering the hydrogen into the passivation chamber is arranged on the outer wall of the loading tank, and the outlet of the hydrogen is consistent with the opening direction of the loading tank.
[0016] Furthermore, after the aluminum oxide film is formed on the silicon wafer, an annealing treatment is performed on the silicon wafer using a third heating temperature.
[0017] On the other hand, based on any one of the above-mentioned silicon wafer cut surface passivation processes, the present application also proposes a silicon wafer cut surface passivation device, the silicon wafer cut surface passivation device comprising: a passivation furnace, the passivation furnace is closed by a furnace door to form the passivation chamber, and a vacuum channel connected to the passivation furnace for evacuating the passivation chamber, and a plurality of silicon wafers stacked in a carrier placed in the passivation chamber, the carrier is placed at the lower part of the furnace door, and the cut surface of the silicon wafer is placed facing downward, the passivation chamber is also provided with a loading trough for holding solid alumina, and a heating element for heating the solid alumina in the loading trough to a preset temperature, and the passivation furnace is also provided with a first injection channel for introducing hydrogen or hydrogen atoms into the passivation chamber.
[0018] Furthermore, the passivation furnace is also provided with a second injection channel for introducing protective gas into the passivation chamber.
[0019] Furthermore, the heating element includes an energizing device electrically connected to the loading trough.
[0020] Furthermore, the heating element comprises a boat body wound around the outer wall of the loading tank, and an external power source connected to two ends of the boat body, and the boat body serves as a metal catalyst for hydrogen decomposition reaction.
[0021] In the present application, hydrogen atoms and aluminum oxide molecules are used to act together on the cut surface of the silicon wafer to jointly complete the passivation efficiency of the cut surface of the battery cell. At the same time, in the same passivation chamber, cracking reactions and decomposition reactions are respectively performed on hydrogen and solid aluminum oxide, so that hydrogen is cracked into hydrogen atoms or hydrogen atoms, solid aluminum oxide is decomposed into aluminum oxide molecules, hydrogen atoms or hydrogen atoms are neutralized with dangling bonds on the cut surface of the silicon wafer, aluminum oxide molecules are attached to the cut surface of the silicon wafer to form an aluminum oxide film, hydrogen atoms or hydrogen atoms and the aluminum oxide film jointly participate in the passivation reaction of the battery cell, forming a relatively stable hydrogen passivation layer and aluminum oxide film, which act together on the cut surface of the battery cell, thereby improving the passivation effect of the battery cell, improving the efficiency and stability of the battery cell, and extending its service life. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0023] Figure 1 The present invention is a schematic structural diagram of a silicon wafer cut surface passivation device.
[0024] Wherein, the accompanying drawings are marked as follows:
[0025] 100. Silicon wafer; 1. Passivation furnace; 2. Furnace door; 3. Loading trough; 4. Power-on device; 5. First injection channel; 6. Solid alumina; 7. Alumina molecules; 8. Vacuum channel; 9. Second injection channel. DETAILED DESCRIPTION
[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0027] In the description of this embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operate in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.
[0028] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
[0029] During the cutting process of the silicon wafer 100, the interruption of the periodic arrangement of silicon atoms will lead to the existence of dangling bonds, thereby forming recombination centers. The passivation process refers to the process of reducing the surface recombination of carriers by inactivating existing defects.
[0030] The recombination of minority carriers is a key factor affecting battery performance, so interface passivation has become a key means to improve the efficiency of crystalline silicon solar cells. Defects in the crystalline silicon material, including impurities, vacancies, lattice distortion, etc., as well as surface defects such as adsorbed impurities and dangling bonds, will become carrier recombination centers, thereby affecting the minority carrier lifetime of the material.
[0031] In the prior art, the technology for silicon wafer interface passivation mostly adopts physical vapor deposition (PVD). Physical vapor deposition is a technology that forms a film layer by evaporating or sputtering materials onto the surface of the cell. The film layer structure of this coating method is dense and has high precision. The evaporation coating process in physical vapor deposition heats the solid material of the coating material to the evaporation temperature, so that the surface molecules obtain enough energy to evaporate and decompose by heating. The evaporated material molecules are deposited on the surface of the silicon wafer 100 to be coated in a vacuum environment to form a thin film. The heating and decomposition of the coating material are mostly heated by resistance heating, electron beam heating, radio frequency induction heating, arc heating and laser heating.
[0032] Among them, the resistance heating method is the most direct. It uses the heat energy generated by the Joule effect of current flowing through a conductor to electrically heat an object. It can heat metals, molten metals or non-metals with an efficiency of almost 100%. At the same time, the operating temperature can reach above 2000°C and can reach the boiling point of solid aluminum oxide 6, so that aluminum oxide can be directly decomposed from a solid state into aluminum oxide molecules 7.
[0033] A silicon wafer cut surface passivation process proposed in the present application includes stacking a plurality of cut silicon wafers 100 and placing them in a sealed passivation chamber, and making the cut surfaces of the plurality of silicon wafers 100 face the same side, then evacuating the passivation chamber, and when the evacuation reaches a stable state, introducing hydrogen into the passivation chamber, and heating the hydrogen to a first heating temperature so that the hydrogen is heated and decomposed into hydrogen atoms or hydrogen ions, and at the same time, using a second heating temperature to thermally decompose solid aluminum oxide 6 into aluminum oxide molecules 7, and the decomposed hydrogen atoms or hydrogen ions are sent together with the aluminum oxide molecules 7 to the cut surface of the silicon wafer 100, so that the hydrogen atoms or hydrogen ions are neutralized with the dangling bonds on the cut surface of the silicon wafer 100, and the aluminum oxide molecules 7 are attached to the cut surface of the silicon wafer 100 to form an aluminum oxide film.
[0034] The dangling bonds (such as dangling bonds) on the surface of the silicon wafer 100 will be combined with hydrogen atoms to reduce these harmful electron-hole pairs. At the same time, the impact of crystalline silicon defects in solar cells can be reduced, and the silicon crystal defects in solar cells can be passivated in a short time. The aluminum oxide film has a high resistivity and a low conductivity, which can effectively prevent the charge from being lost from the cut surface of the silicon wafer 100 to prevent the recombination loss of the charge, thereby improving the photoelectric conversion efficiency of the cell. The negative charge is just at the junction of the aluminum oxide and the silicon oxide interface generated on the silicon crystal surface, and the negative charge density is high, which can ensure the generation of an efficient field passivation effect. Aluminum oxide is selected as a passivation material not only because of its excellent electrical insulation properties, but also because it can form a good chemical bond with the silicon surface to provide a long-term and stable passivation effect.
[0035] As a preferred solution, a protective gas is introduced into the passivation chamber while the interior of the passivation chamber is evacuated. The protective gas may include nitrogen, helium, argon, etc. As one embodiment, nitrogen can be introduced while evacuating the chamber. The nitrogen can be used to remove the impurity gas in the chamber while evacuating the chamber. Nitrogen is introduced into the chamber while evacuating the chamber. Nitrogen does not participate in silicon reaction. After the impurity gas in the furnace body is removed and the vacuum is evacuated to a stable value, the introduction of nitrogen is stopped, and then hydrogen or hydrogen atoms or hydrogen ions after the hydrogen is cracked are introduced into the chamber.
[0036] In addition, the process of introducing hydrogen into the passivation chamber further includes: while heat treating the hydrogen, passing the hydrogen through a metal catalyst disposed in the passivation chamber, the hydrogen molecules are adsorbed on the metal catalyst and cracked into hydrogen atoms or hydrogen ions, and the metal catalyst can provide a suitable surface environment and energy transfer path to promote the dissociation reaction of the hydrogen molecules on its surface. When the hydrogen comes into contact with the metal catalyst-shaped substance, the hydrogen molecules are adsorbed on the catalyst surface, and under the thermal effect of the second heating temperature, the chemical bonds of the hydrogen molecules are weakened and eventually broken, thereby forming hydrogen atoms or hydrogen ions, which fly to the cross section of the silicon wafer 100 and combine with the dangling bonds on the cross section of the silicon wafer 100 to form stable chemical bonds, thereby reducing the surface state density and improving the surface stability.
[0037] Parameters such as the thickness, uniformity and annealing temperature of the passivation layer need to be precisely controlled to achieve the best passivation effect.
[0038] In some embodiments, the second heating temperature is preset in the range of 1500°C to 3500°C, reaching the boiling point of alumina, so that the solid alumina 6 can be decomposed into gaseous alumina molecules 7. After laser non-destructive scribing, the cut cell pieces are stacked and placed in a passivation chamber under vacuum conditions and a temperature environment of 20°C to 300°C. The silicon wafer cut surface passivation technology proposed in the present application is used to deposit a 20nm thick AlOx passivation layer on the edge of the side cut surface of the cell piece. Then, the side cut surface of the cell piece on which the AlOx passivation layer is deposited is annealed at a temperature environment of 100°C to 350°C. Compared with the directly cut sample, the efficiency of the cell piece after edge passivation using the passivation technology is increased by 0.7%, which has a significant efficiency improvement.
[0039] In some embodiments, the metal catalyst is electrically heated to a first heating temperature. The metal catalyst can generate heat to the first heating temperature under the action of electrical power, so that the hydrogen is heated to the first heating temperature while passing through the metal catalyst. After the hydrogen adsorbed on the metal catalyst is heated, it can quickly decompose into hydrogen atoms or hydrogen ions. The decomposed hydrogen atoms or hydrogen ions are plated onto the surface of the cut surface of the silicon wafer 100 to combine with the dangling bonds on the cut surface of the silicon wafer 100.
[0040] Specifically, the metal catalyst can be metal tungsten, molybdenum, nickel, platinum, etc., all of which are rare precious metals with unique electronic structures and catalytic active sites. They can provide a suitable surface environment and energy transfer path to promote the dissociation reaction of hydrogen molecules on their surface. When hydrogen comes into contact with these metal catalysts, hydrogen molecules may be adsorbed on the catalyst surface. Under the action of the energy provided by the metal catalyst (such as heat, electric field, etc.), the chemical bonds of the hydrogen molecules are weakened and eventually broken, thereby forming hydrogen atoms.
[0041] In addition, the metal catalyst in this embodiment is also used to heat the solid aluminum oxide 6, that is, the metal catalyst is electrically heated to the second heating temperature. The metal catalyst is used as a heating source for heating aluminum oxide. At this time, the second heating temperature is equal to the first heating temperature. The first heating temperature and the second heating temperature are not less than 2000°C. The metal catalyst heats the solid aluminum oxide 6 while heating the hydrogen, so that the cracking of the hydrogen and the decomposition of the solid aluminum oxide 6 are produced simultaneously. The cracked hydrogen atoms and aluminum oxide molecules 7 act together on the surface of the cut surface of the silicon wafer 100. The hydrogen atoms are combined with the hanging bonds on the cut surface of the silicon wafer 100, and the aluminum oxide is attached to the outer layer of the hydrogen atom bonding layer to form an aluminum oxide film. The aluminum oxide film itself has excellent electrical insulation properties and can form a good chemical bond with the silicon surface to provide a stable passivation effect. The present application adds hydrogen atoms to the hanging bonds at the cut surface of the silicon wafer 100 in the inner layer of aluminum oxide, further preventing the charge recombination of the cut surface, thereby improving the efficiency and stability of the battery cell and extending its service life.
[0042] In some embodiments, the metal catalyst is prepared as a loading trough 3 for holding solid alumina 6. Ends are extended at both ends of the loading trough 3. The tentacles at the two ends are respectively connected to two different electrodes. When the two electrodes of the loading trough 3 are energized, the loading trough 3 is heated as a whole until the temperature rises to a second heating temperature that reaches the boiling point of alumina, so that the solid alumina 6 placed in the loading trough 3 is decomposed into alumina molecules 7. In this embodiment, the metal catalyst is used as a catalyst for hydrogen cracking and is used to make a container for holding solid alumina 6 coating materials. It is also used as a heating source for solid alumina 6, and at the same time participates in the common process of hydrogen cracking and decomposition of solid alumina 6, thereby simplifying the overall structure and saving design costs.
[0043] Preferably, a channel for sending hydrogen into the passivation chamber is arranged on the outer wall of the loading tank 3, and the outlet of hydrogen is consistent with the opening direction of the loading tank 3. Hydrogen is sent into the interior of the passivation chamber by external force, and hydrogen channels are arranged around the loading tank 3, so that the hydrogen is in direct contact with the loading tank 3 where the metal catalyst is set. The loading tank 3 heats the solid alumina 6 and the hydrogen passing through the loading tank 3 at the same time, and the hydrogen atoms cracked by the loading tank 3 move toward the cut surface of the silicon wafer 100 together with the alumina molecules 7 decomposed in the loading tank 3 along with the flow rate of the injected hydrogen. The hydrogen atoms can carry the alumina molecules 7 close to the cut surface of the silicon wafer 100. When contacting the cut surface of the silicon wafer 100, the hydrogen atoms can pass through the alumina film and stably combine with the dangling bonds. The alumina is attached to the outer layer of the cut surface of the silicon wafer 100 to form a passivation layer of the alumina film, which prevents the charge recombination of the cut surface, thereby improving the efficiency and stability of the battery cell.
[0044] In some embodiments, the silicon wafer cut surface passivation process also includes forming an aluminum oxide film of a required thickness in the passivation chamber, and then heating the silicon wafer 100 at a third heating temperature to perform an annealing treatment. At the third heating temperature, impurities, defects, and residual stress on the cut surface of the silicon wafer 100 will be activated, so that they can diffuse, rearrange, and eventually be removed. At the same time, the cut surface of the silicon wafer 100 will also rearrange and adjust the crystal structure to make it more complete and stable. In this way, the electronic performance of the silicon wafer 100 can be significantly improved to achieve the best passivation effect.
[0045] On the other hand, the present application also proposes a silicon wafer cut surface passivation device based on any of the above-mentioned silicon wafer cut surface passivation processes, including a passivation furnace 1, the passivation furnace 1 is sealed with a furnace door 2 to form a passivation chamber, and a vacuum channel 8 connected to the passivation furnace 1, and a plurality of silicon wafers 100 stacked in a carrier placed in the passivation chamber, the carrier containing the silicon wafers 100 is placed at the lower part of the furnace door 2, and the cut surface of the silicon wafer 100 is placed downward, the vacuum channel 8 evacuates the passivation chamber, and the passivation chamber is also provided with a loading trough 3 for holding solid alumina 6, and a loading trough 3 for placing the loading trough 3 A heating element is provided to heat the solid aluminum oxide 6 in the passivation chamber to a preset temperature. The passivation furnace 1 is also provided with a first injection channel 5 for introducing hydrogen gas or hydrogen atoms into the passivation chamber. The heating element heats the solid aluminum oxide 6 to decompose it into aluminum oxide molecules 7. The decomposed hydrogen atoms or hydrogen ions neutralize the dangling bonds on the cut surface of the battery cell, passivate the defects of the cut surface of the battery cell, and the aluminum oxide molecules form an aluminum oxide film on the cut surface of the battery cell, forming a good chemical bond with the cut surface of the battery cell, blocking the charge recombination of the cut surface, providing a stable passivation effect, thereby improving the efficiency and stability of the battery cell and extending its service life.
[0046] It should be noted that the first injection channel 5 can inject hydrogen into the passivation chamber and decompose the hydrogen into hydrogen atoms or hydrogen ions in the passivation chamber, or it can directly inject the separated hydrogen atoms or hydrogen ions into the passivation chamber. The hydrogen atoms or hydrogen ions can be prepared by an external mechanism and then introduced into the passivation chamber.
[0047] In some embodiments, the passivation furnace 1 is further provided with a second injection channel 9 for introducing a protective gas into the passivation chamber. For example, nitrogen can be introduced into the passivation chamber. While the passivation chamber is evacuated, the second injection channel 9 introduces nitrogen into the passivation chamber. Nitrogen does not participate in the silicon reaction and can discharge impurity gases in the passivation chamber and in the gaps between the battery cells while evacuating the chamber.
[0048] In some embodiments, the heating element also includes a power-on device 4 connected to the loading tank 3. The power-on device 4 energizes both ends of the loading tank 3 so that current passes through the loading tank 3 structure. The loading tank 3 acts as a resistor to generate heat to heat the solid aluminum oxide 6 placed in the loading tank 3 to a boiling point, thereby decomposing it into aluminum oxide molecules 7. When hydrogen is introduced into the passivation chamber, the hydrogen passes through the loading tank 3 and is heated by the loading tank 3 to be cracked into hydrogen atoms. The hydrogen atoms are emitted into the passivation chamber and combine with the dangling bonds on the cut surface of the silicon wafer 100 to form stable chemical bonds. The decomposed aluminum oxide molecules 7 are transported to the cut surface of the silicon wafer 100 to be plated into an aluminum oxide film, thereby forming a stable passivation layer together.
[0049] In another embodiment, the heating element includes a boat body wound around the outer wall of the loading tank 3, and an external power supply connected to the two ends of the boat body. The boat body is used as a metal catalyst for hydrogen cracking reaction, and the two ends of the boat body are connected to the positive and negative electrodes of the external power supply. Preferably, the boat body can be a spirally wound metal wire, such as tungsten wire wound around the outer wall of the loading tank 3, so that the tungsten wire is hemispherical and supported on the bottom of the loading tank 3. The two ends of the tungsten wire are energized to heat the bottom of the loading tank 3 after it is heated, so as to heat the solid alumina 6 placed in the loading tank 3. At the same time, the hydrogen is heated after passing through the tungsten wire and cracked into hydrogen atoms by the catalytic effect of the tungsten wire.
[0050] It should be noted that it is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential features of the present invention. Therefore, no matter from which point of view, the embodiments should be regarded as exemplary and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims are included in the present invention, and any figure mark in the claims should not be regarded as limiting the claims involved.
[0051] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.
Claims
1. A silicon wafer cut surface passivation process, characterized in that: include: A plurality of cut silicon wafers (100) are stacked and placed in a sealed passivation chamber, with the cut surfaces of the plurality of silicon wafers (100) facing the same side. Evacuate the passivation chamber; Introducing hydrogen into the passivation chamber, and heating the hydrogen to a first heating temperature so that the hydrogen is heated and decomposed into hydrogen atoms or hydrogen ions; The solid aluminum oxide (6) is decomposed into aluminum oxide molecules (7) by heat treatment at a second heating temperature, and the hydrogen atoms or hydrogen ions act together with the aluminum oxide molecules (7) on the cut surface of the silicon wafer (100). The hydrogen atoms or hydrogen ions are used to neutralize the hanging parts on the cut surface of the silicon wafer (100), and the aluminum oxide molecules (7) are used to form an aluminum oxide film on the cut surface of the silicon wafer (100).
2. The silicon wafer cut surface passivation process according to claim 1, characterized in that: While evacuating the passivation chamber, a protective gas is introduced into the passivation chamber.
3. The silicon wafer cut surface passivation process according to claim 1, characterized in that: The process of introducing hydrogen into the passivation chamber also includes: while heat treating the hydrogen, allowing the hydrogen to pass through a metal catalyst disposed in the passivation chamber, so that hydrogen molecules adsorbed on the metal catalyst are cracked into hydrogen atoms or hydrogen ions.
4. The silicon wafer cut surface passivation process according to claim 3, characterized in that: The metal catalyst is electrically heated to a first heating temperature so that the metal catalyst is heated and heat acts on hydrogen passing through the metal catalyst.
5. The silicon wafer cut surface passivation process according to claim 3, characterized in that: The metal catalyst is any one of metal tungsten, molybdenum, nickel and platinum, or a composite of any two or more thereof.
6. The silicon wafer cut surface passivation process according to claim 3, characterized in that: The metal catalyst is used to electrically heat the solid aluminum oxide (6) to the second heating temperature, which is the same as the first heating temperature.
7. The silicon wafer cut surface passivation process according to claim 3, characterized in that: The solid aluminum oxide (6) is placed in a loading tank (3) made of the metal catalyst, and two ends of the loading tank (3) are respectively connected to two different electrodes.
8. The silicon wafer cut surface passivation process according to claim 7, characterized in that: The channel for delivering the hydrogen into the passivation chamber is arranged on the outer wall of the material loading tank (3), and the hydrogen outlet is in the same direction as the opening of the material loading tank (3).
9. The silicon wafer cut surface passivation process according to claim 1, characterized in that: After the aluminum oxide film is formed on the silicon wafer (100), an annealing process is performed on the silicon wafer (100) using a third heating temperature.
10. A silicon wafer cut surface passivation device, characterized in that: Based on the silicon wafer cut surface passivation process as described in any one of claims 1 to 9, the silicon wafer cut surface passivation device comprises: a passivation furnace (1), the passivation furnace (1) is closed by a furnace door (2) to form the passivation chamber, and a vacuum channel (8) connected to the passivation furnace (1) for evacuating the passivation chamber, and a plurality of silicon wafers (100) stacked in a carrier placed in the passivation chamber, the carrier is placed at the lower part of the furnace door (2) and the cut surface of the silicon wafer (100) is placed downward, the passivation chamber is also provided with a loading trough (3) for holding solid aluminum oxide (6), and a heating element for heating the solid aluminum oxide (6) in the loading trough (3) to a preset temperature, and the passivation furnace (1) is also provided with a first injection channel (5) for introducing hydrogen or hydrogen atoms into the passivation chamber.
11. The silicon wafer cut surface passivation device according to claim 10, characterized in that: The passivation furnace (1) is also provided with a second injection channel (9) for introducing protective gas into the passivation chamber.
12. The silicon wafer cut surface passivation device according to claim 10, characterized in that: The heating element comprises an energizing device (4) electrically connected to the material loading trough (3).
13. The silicon wafer cut surface passivation device according to claim 10, characterized in that: The heating element comprises a boat body wound around the outer wall of the material loading tank (3), and an external power source connected to the two ends of the boat body, and the boat body serves as a metal catalyst for the hydrogen decomposition reaction.