In-situ testing device and method for comprehensive performance of thermoelectric devices

Abstract

The present invention provides an in-situ testing device and method for the comprehensive performance of thermoelectric devices. The in-situ testing method for the comprehensive performance of thermoelectric devices comprises forming a metal film layer on the first working surface of the thermoelectric device by using a film coating process; electrically connecting the metal film layer and the thermoelectric device to the testing device respectively, and vacuuming the area where the thermoelectric device is located. The in-situ testing device and method for the comprehensive performance of thermoelectric devices of the present invention form a metal film layer on the first working surface of the thermoelectric device by using a film coating process, thereby ensuring the contact reliability between the metal film layer and the first working surface and simplifying the heat transfer process. The metal film layer can be used as a resistive temperature sensor and a micro heat source to meet the needs of accurate temperature measurement and quantitative heat transfer. At the same time, placing the thermoelectric device in a vacuum environment can prevent the air from taking away part of the heat and causing errors, thereby improving the test accuracy of the comprehensive performance of the thermoelectric device.

Description

Technical Field

[0001] The present invention relates to the technical field of thermoelectric device performance testing, and in particular to an in-situ testing device and method for comprehensive performance of thermoelectric devices. Background Art

[0002] Thermoelectric devices use the Seebeck effect and the Peltier effect to achieve the mutual conversion of thermal energy and electrical energy. Micro thermoelectric devices are smaller in size and have the characteristics of high response speed and high power density. The performance of micro thermoelectric devices mainly includes power generation performance (output power under different temperature differences, effective Seebeck coefficient, etc.) and refrigeration performance (refrigeration response time, maximum refrigeration temperature difference, maximum refrigeration power density, etc.). However, due to the influence of the size of the micro thermoelectric device itself, the commonly used test systems often have large interface thermal resistance, so the test error is large, and it is necessary to design a test system for micro thermoelectric devices. The testing of micro thermoelectric devices mainly requires solving the accurate real-time acquisition of the upper and lower surface temperatures of the thermoelectric device and the precise control of the surface heat flux. The existing performance testing methods for micro thermoelectric devices are mainly contact and non-contact methods:

[0003] Non-contact testing methods often use large equipment such as time-domain thermal reflection systems, infrared cameras, and infrared heating light sources to collect temperature and heat transfer data. However, the equipment required for this type of method is expensive, the platform construction is complex, and the temperature collected by the non-contact method depends on the surface reflectivity of the material. Therefore, when the surface material is inconsistent, the collected temperature will have a large error. In addition, when using the non-contact method to perform surface heat transfer on the device under test, due to the large size of the test instrument and the test is performed in an air environment, air convection will carry away a considerable amount of heat. Since the micro-thermoelectric device itself is small in size, this part of the lost heat will cause a large error.

[0004] The contact test method usually uses the micro heat source method for testing. A heat source with a small constant power output is placed against the surface of the device to perform quantitative heat transfer on the device. At the same time, thermocouples are used to assist in testing the temperatures at the upper and lower ends of the device. This method also has a large overall equipment volume and cannot be tested in a vacuum environment. Therefore, it is greatly affected by air convection. At the same time, thermocouples are used for temperature collection. The contact between the thermocouple and the micro heat source is not completely in contact, so there is a large interface thermal resistance. At the same time, the micro heat source and the contact surface of the device cannot be completely in contact, and the thermal resistance is also large. Therefore, there are errors that cannot be eliminated in the collection of temperature and heat transfer.

[0005] Therefore, both the non-contact measurement method and the contact measurement method in the prior art have the problem of low detection accuracy, which seriously affects the detection results. Summary of the Invention

[0006] The present invention provides an in-situ testing device and method for comprehensive performance of thermoelectric devices, which utilize a coating process to form a metal thin film layer and detect the thermoelectric device in a vacuum environment to improve detection accuracy.

[0007] A comprehensive performance in-situ testing method for a thermoelectric device, comprising:

[0008] Step S1, forming a metal thin film layer on a first working surface of the thermoelectric device by using a coating process;

[0009] Step S2: electrically connecting the metal film layer and the thermoelectric device to a testing device, and evacuating the area where the thermoelectric device is located;

[0010] Step S3: controlling the test device according to the test target performance parameters, and recording the data of the metal thin film layer and the thermoelectric device in real time;

[0011] Step S4: fitting the recorded data to obtain actual performance parameters of the thermoelectric device.

[0012] Before step S2, the method further includes:

[0013] The metal film layer is processed according to a preset shape.

[0014] The preset shape includes a continuous S-shape or a continuous U-shape.

[0015] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes output power. In step S3, the following steps are further included:

[0016] Step a1: controlling the power supply structure to supply direct current power to the metal film layer to heat the first working surface of the thermoelectric device;

[0017] Step a2: adjusting the output power of the DC power supply of the power supply structure so that the temperature difference between the first working surface and the second working surface of the thermoelectric device can reach at least two preset values, and recording the output voltage and output current values ​​of the thermoelectric device when the temperature difference reaches any one of the preset values;

[0018] Step a3: Fit all recorded output voltage values ​​and all recorded output current values ​​to obtain the output power of the component to be tested.

[0019] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the following steps are further included:

[0020] Step b1, controlling the power supply structure to supply DC power to the thermoelectric device so as to cool the first working surface of the thermoelectric device, and supply DC power to the metal film layer so as to heat the first working surface;

[0021] Step b2: adjusting the current value of the DC power supply of the metal film layer until the temperature difference between the first working surface and the second working surface reaches a first preset temperature difference value, and recording at least two sets of data during the adjustment process, the data including the real-time resistance value of the metal film layer, the temperature value of the first working surface, and the temperature difference value between the first working surface and the second working surface;

[0022] Step b3: fitting the recorded data to obtain the cooling power density of the thermoelectric device under the corresponding working current.

[0023] In step b1, the method further includes:

[0024] The power supply structure is controlled to supply direct current with different current values ​​to the thermoelectric device.

[0025] In step b1, the method further includes:

[0026] Adjusting the current value of the DC power supply provided by the power supply structure to the metal film layer, and calculating the real-time temperature difference between the first working surface and the second working surface;

[0027] When the temperature difference between the first working surface and the second working surface reaches a maximum value, the maximum cooling temperature difference of the thermoelectric device is determined.

[0028] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the following steps are further included:

[0029] Step c1, controlling the power supply structure to supply DC power to the thermoelectric device so as to cool the first working surface of the thermoelectric device;

[0030] Step c2: adjusting the current value of the DC power supply of the thermoelectric device, and recording the time point of the current value change and the duration from the start of the change to the stop of the change of the temperature of the first working surface;

[0031] Step c3: Fitting the recorded change time points and duration periods to obtain the cooling response time of the thermoelectric device.

[0032] In step c2, it further includes:

[0033] The current value of the direct current power supply of the thermoelectric device increases step by step within a first preset range.

[0034] In step c2, it further includes:

[0035] The current value of the direct current power supply of the thermoelectric device is adjusted again after a first set time interval.

[0036] In step c1, it further includes:

[0037] The constant temperature device in the test device is controlled to operate so as to perform constant temperature cooling on the second working surface of the thermoelectric device.

[0038] The material of the metal film layer includes nickel, copper or platinum.

[0039] A comprehensive performance in-situ testing device for thermoelectric devices uses the above-mentioned comprehensive performance in-situ testing method for thermoelectric devices.

[0040] The comprehensive in-situ performance testing device for thermoelectric devices includes:

[0041] Vacuum box;

[0042] A constant temperature device, which is arranged in the vacuum box and is used to place thermoelectric devices;

[0043] A probe station, wherein the probe station is arranged in the vacuum box, and a probe of the probe station can move freely in the vacuum box;

[0044] A power supply structure is provided outside the vacuum box and is capable of being electrically connected to the thermoelectric device and the metal film layer on the thermoelectric device.

[0045] The constant temperature device includes a water cooling table and a water pump. A cooling pipeline is provided in the water cooling table. The water pump is connected to the cooling pipeline and can circulate the cooling medium in the cooling pipeline.

[0046] A thermocouple is provided in the water cooling stage, and the thermocouple can be attached to the second working surface of the thermoelectric device to obtain the temperature of the second working surface.

[0047] The power supply structure includes a DC power supply and a source meter, which can be electrically connected to the thermoelectric device and the metal film layer, and can provide DC power to the thermoelectric device and / or provide DC power to the metal film layer.

[0048] The testing device further includes a multimeter, which can be electrically connected to the thermoelectric device and the metal thin film layer, and can obtain the output voltage and output current of the thermoelectric device and / or obtain the resistance of the metal thin film layer.

[0049] The present invention's in-situ comprehensive performance testing device and method for thermoelectric devices utilizes a coating process to form a metal film layer on the first working surface of the thermoelectric device, ensuring reliable contact between the metal film layer and the first working surface and simplifying the heat transfer process. The metal film layer can function as a resistive temperature sensor, and by recording the resistance value of the metal film layer, the real-time temperature of the first working surface can be calculated. This ensures reliable heat transfer between the thermoelectric device and the metal film layer, overcoming the unreliable contact issues of thermoelectric devices in the prior art and ensuring reliable testing of the thermoelectric device. Furthermore, placing the thermoelectric device in a vacuum environment prevents errors caused by air carrying away some heat, thereby improving the accuracy of thermal resistance testing of the thermoelectric device. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Hereinafter, the present invention will be described in more detail based on embodiments with reference to the accompanying drawings.

[0051] Figure 1 This is a control flow chart of an in-situ testing method for comprehensive performance of a thermoelectric device provided by an embodiment of the present invention;

[0052] Figure 2 This is a control flow chart for power generation performance testing of a comprehensive performance in-situ testing method for thermoelectric devices provided by an embodiment of the present invention;

[0053] Figure 3 This is a cooling performance test control flow chart of the in-situ comprehensive performance test method for thermoelectric devices provided by an embodiment of the present invention;

[0054] Figure 4 This is a flow chart of a cooling response time test for an in-situ comprehensive performance testing method for a thermoelectric device provided by an embodiment of the present invention;

[0055] Figure 5 1 is a schematic structural diagram of an in-situ testing device for comprehensive performance of a thermoelectric device provided by an embodiment of the present invention;

[0056] Figure 6 This is a volt-ampere curve diagram fitted with power generation performance test data of the thermoelectric device provided by an embodiment of the present invention;

[0057] Figure 7 The output voltage and power density versus temperature difference curves fitted with the power generation performance test data of the thermoelectric device provided in an embodiment of the present invention are shown;

[0058] Figure 8 This is the change in resistance from the start to the stable state when the input current of the metal film layer is 0.012A in the cooling performance test of the thermoelectric device provided by the embodiment of the present invention;

[0059] Figure 9is a relationship diagram between the temperature difference and the heat transfer power density at the cold end of the thermoelectric device provided by an embodiment of the present invention, obtained by fitting the cooling performance test data of the thermoelectric device;

[0060] Figure 10 This is a relationship diagram between the temperature difference of the thermoelectric device when different current values ​​are input and the heat transfer power density at the cold end of the thermoelectric device, which is fitted based on the cooling performance test data of the thermoelectric device provided by an embodiment of the present invention;

[0061] Figure 11 is a graph showing the input current of a thermoelectric device in a cooling response time test of the thermoelectric device provided by an embodiment of the present invention;

[0062] Figure 12 This is a real-time temperature change curve of the first working surface of the thermoelectric device in the cooling response time test of the thermoelectric device provided by the embodiment of the present invention;

[0063] Figure 13 This is a real-time change curve of time and temperature fitted with the cooling response time test data of the thermoelectric device provided by an embodiment of the present invention;

[0064] Figure 14 is a schematic diagram of the shape of the metal film layer after processing according to an embodiment of the present invention;

[0065] Figure 15 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention;

[0066] Figure 16 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention;

[0067] Figure 17 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention;

[0068] Figure 18 is a temperature resistance curve of a 400nm metal thin film layer according to an embodiment of the present invention;

[0069] In the drawings, like reference numerals are used for like parts, but the drawings are not necessarily drawn to scale.

[0070] 1. Vacuum box; 2. Constant temperature equipment; 3. Probe station; 4. Power supply structure; 5. Multimeter. DETAILED DESCRIPTION

[0071] The present invention will be further described below with reference to the accompanying drawings.

[0072] like Figures 1 to 18 As shown, the present invention provides an in-situ testing method for comprehensive performance of thermoelectric devices, comprising:

[0073] Step S1: forming a metal thin film layer on the first working surface of the thermoelectric device by a coating process, so that the metal thin film layer is integrated into the first working surface, overcoming the problem in the prior art that the structure for heating the thermoelectric device and the thermoelectric device cannot be completely bonded together, resulting in a large thermal resistance, thereby reducing errors, wherein the coating process is preferably a magnetron sputtering process;

[0074] Step S2: electrically connecting the metal film layer and the thermoelectric device to a testing device, thereby supplying power to the metal film layer and the thermoelectric device, detecting parameters of the metal film layer and the thermoelectric device (e.g., temperature, output voltage, output current, resistance, etc.), and evacuating the area where the thermoelectric device is located;

[0075] Step S3: Controlling the test device according to the target performance parameters of the test, and recording data of the metal thin film layer and the thermoelectric device in real time, wherein the target performance parameters are determined by the operator. For example, the power generation performance of the thermoelectric device can be tested, the cooling performance of the thermoelectric device can be tested, and the thermal resistance of the thermoelectric device can also be tested;

[0076] Step S4: fitting the recorded data to obtain actual performance parameters of the thermoelectric device.

[0077] In the entire testing method, a metal film layer is formed on the first working surface of the thermoelectric device using a coating process, ensuring reliable contact between the metal film layer and the first working surface and simplifying the heat transfer process. The metal film layer can be used as a resistive temperature sensor. By recording the resistance value of the metal film layer, the real-time temperature of the first working surface can be calculated. This ensures reliable heat transfer between the thermoelectric device and the metal film layer, overcoming the high thermal resistance of the contact interface of the thermoelectric device in the prior art and ensuring reliable testing of the thermoelectric device. Furthermore, placing the thermoelectric device in a vacuum environment prevents errors caused by air dissipating some of the heat, thereby improving the accuracy of the thermoelectric device performance test.

[0078] Before step S2, the method further includes:

[0079] The metal film layer is processed according to a preset shape. By processing the metal film layer, the metal film layer can change the size between the probe heads that power the metal film layer while ensuring reliable heating of the first working surface of the thermoelectric device, thereby effectively increasing the resistance of the metal film layer and ensuring the heating capacity after the metal film layer is energized.

[0080] Preferably, Figures 14 to 17As shown, the preset shape includes a continuous S-shape or a continuous U-shape, and the probe heads for powering the metal film layer are respectively located at both ends of the continuous S-shape or the two ends of the continuous U-shape. At this time, the metal film layer can still be evenly covered on the first working surface, and the communication path between the probe heads can be increased as much as possible, that is, the resistance of the metal film layer can also be increased as much as possible at this time, thereby ensuring the heating capacity of the metal film layer and the uniformity of heating of the first working surface.

[0081] The thickness of the metal film layer ranges from 200 nm to 1200 nm. Preferably, the thickness of the metal film layer is 400 nm. Figure 18 It can be seen that the temperature resistance relationship of the 400nm metal film layer is linear in the entire temperature range of 20-200℃, and the temperature resistance coefficient TCR reaches 3.38×10 -3 / ℃, with good temperature sensing performance.

[0082] Optionally, the material of the metal film layer includes nickel, copper or platinum, so that the metal film layer can be deposited using a magnetron sputtering process and can also form a certain resistance to achieve the purpose of heat generation.

[0083] Magnetron sputtering thin film deposition technology belongs to physical vapor deposition (PVD). This method can be used to deposit a variety of materials including metals, semiconductors, ceramics, etc. It has the advantages of simple equipment, easy control, large coating area and good density. The thin film prepared by magnetron sputtering generally has good bonding strength with the substrate, but if the substrate is not thoroughly cleaned, it will affect the adhesion between the film and the substrate during sputtering, which will cause the film to fall off and the preparation to fail. Therefore, the substrate needs to be thoroughly cleaned before thin film deposition. The substrate is placed in deionized water, anhydrous ethanol and acetone in sequence for thorough ultrasonic cleaning. The single cleaning time is not less than 15 minutes. Finally, deionized water is used to clean off any residual cleaning agent that may exist on the surface of the substrate. After cleaning, it is placed in a drying oven to dry for 15 minutes. Then the substrate is fixed on the sputtering substrate in preparation for subsequent sputtering operations. Magnetron sputtering can be used to obtain metal films with higher density. Their physical properties are closer to those of bulk metal materials, and the temperature sensing performance of metal films is better. Compared with other thin film preparation processes, magnetron sputtering not only has good film density, but also has a wide range of film thickness, from hundreds of nanometers to tens of microns. At the same time, the film formation rate and quality are highly controllable and repeatable, which is conducive to the preparation of metal film layers with performance consistent with thermoelectric devices.

[0084] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes output power. In step S3, the following steps are further included:

[0085] Step a1: controlling the power supply structure to supply direct current power to the metal film layer to heat the first working surface of the thermoelectric device;

[0086] Step a2: Adjusting the output power of the DC power supply of the power supply structure, thereby adjusting the heating capacity of the metal thin film layer. The thermoelectric device can generate electricity externally when there is a temperature difference between the first working surface and the second working surface. Therefore, the temperature difference between the first working surface and the second working surface of the thermoelectric device can reach at least two preset values. When the temperature difference reaches any one of the preset values, the output voltage and output current of the thermoelectric device are recorded. A multimeter can be electrically connected to the thermoelectric device to directly obtain the output power, output voltage, and output current of the thermoelectric device.

[0087] Step a3: Fit all recorded output voltage values ​​and all recorded output current values ​​to obtain the output power of the component to be tested.

[0088] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the following steps are further included:

[0089] Step b1, controlling the power supply structure to supply DC power to the thermoelectric device so as to cool the first working surface of the thermoelectric device, and supply DC power to the metal film layer so as to heat the first working surface;

[0090] Step b2, adjusting the current value of the DC power supply of the metal film layer, changing the heating capacity of the metal film layer on the first working surface, until the temperature difference between the first working surface and the second working surface reaches a first preset temperature difference value, and recording at least two sets of data during the adjustment process, the data including the real-time resistance value of the metal film layer, the temperature value of the first working surface and the temperature difference between the first working surface and the second working surface. Specifically, first input a constant current to the metal film layer, and after the temperature difference stabilizes, calculate the heating power of the metal film layer at this time, calculate the temperature of the first working surface of the thermoelectric device at this time, and record the temperature difference of the thermoelectric device at this time; then increase the constant current input to the metal film layer, and after the temperature difference stabilizes, calculate the heating power of the metal film layer at this time, calculate the temperature of the first working surface of the thermoelectric device at this time, and record the temperature difference of the thermoelectric device at this time; by continuously increasing the current value of the constant current until the temperature difference of the thermoelectric device approaches or even reaches the first preset temperature difference value, preferably, the first preset temperature difference value is close to 0K;

[0091] Step b3: Fit the recorded data to obtain the cooling power density of the thermoelectric device under the corresponding working current, and use the input power and cooling power of the thermoelectric device at this time to calculate the cooling efficiency COP of the thermoelectric device.

[0092] Wherein, in step b1, it also includes:

[0093] The power supply structure is controlled to supply DC power of different current values ​​to the thermoelectric device, and then steps b2 and b3 are repeated to obtain the cooling power density of the thermoelectric device under different current inputs.

[0094] In step b1, the method further includes:

[0095] Adjusting the current value of the DC power supply provided by the power supply structure to the metal film layer, and calculating the real-time temperature difference between the first working surface and the second working surface;

[0096] When the temperature difference between the first working surface and the second working surface reaches a maximum value, determining a maximum cooling temperature difference of the thermoelectric device;

[0097] The thermoelectric device is supplied with direct current according to the current value corresponding to the maximum cooling temperature difference of the thermoelectric device. At this time, the output power corresponding to the maximum cooling temperature difference of the thermoelectric device can be cooled. Finally, in step b3, the maximum cooling power density of the thermoelectric device under the maximum cooling condition can be obtained.

[0098] The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the following steps are further included:

[0099] Step c1, controlling the power supply structure to supply DC power to the thermoelectric device so as to cool the first working surface of the thermoelectric device;

[0100] Step c2: adjusting the current value of the DC power supply of the thermoelectric device, and recording the time point of the current value change and the duration from the start of the change to the stop of the change of the temperature of the first working surface;

[0101] Step c3: Fitting the recorded change time points and duration periods to obtain the cooling response time of the thermoelectric device. Preferably, 70% of the time from the start of the temperature rise to the stop of the change is determined as the cooling response time of the thermoelectric device.

[0102] In step c2, it further includes:

[0103] The current value of the DC power supply of the thermoelectric device increases step by step within a first preset range, and increases by 0.5A at a time to facilitate the processing of experimental data. The first preset range is selected or confirmed according to the specific thermoelectric device.

[0104] In step c2, it further includes:

[0105] The current value of the DC power supply of the thermoelectric device is next adjusted after a first set time interval. The first set time ranges from 100 seconds to 200 seconds. Preferably, the first set time is 140 seconds. The first set time allows sufficient time for the temperature difference between the first working surface and the second working surface of the thermoelectric device to stabilize, facilitating experimental data processing.

[0106] In step c1, it further includes:

[0107] The constant temperature equipment in the control test device is operated to perform constant temperature cooling on the second working surface of the thermoelectric device. The constant temperature cooling of the constant temperature equipment can ensure that the second working surface is always at the set temperature, thereby ensuring that the temperature of the first working surface can also reach a stable value, thereby ensuring the reliability of the performance test of the thermoelectric device.

[0108] A comprehensive performance in-situ testing device for thermoelectric devices uses the above-mentioned comprehensive performance in-situ testing method for thermoelectric devices.

[0109] The comprehensive in-situ performance testing device for thermoelectric devices includes:

[0110] The vacuum box 1 is used to evacuate the vacuum box 1, thereby providing a vacuum environment for the thermoelectric device;

[0111] A constant temperature device 2 is provided in the vacuum chamber 1 and is used to place a thermoelectric device. The constant temperature device 2 is used to provide a stable temperature for the second working surface of the thermoelectric device to ensure that the thermoelectric device can operate at its maximum capacity during testing. For example, when the thermoelectric device is cooling, its second working surface serves as the hot end, while the first working surface serves as the cold end. Since the temperature of the second working surface is constant, the temperature of the cold end can also be stabilized, thereby ensuring a stable temperature difference between the hot and cold ends of the thermoelectric device during cooling, facilitating testing;

[0112] A probe station 3 is provided in the vacuum box 1, and a probe of the probe station 3 can move freely in the vacuum box 1. The movement of the probe of the probe station 3 can ensure the connection reliability with the thermoelectric device and the metal thin film layer;

[0113] The power supply structure 4 is provided outside the vacuum box 1 and can be electrically connected to the thermoelectric device and the metal film layer on the thermoelectric device.

[0114] The constant temperature device 2 includes a water cooling stage and a water pump. The water cooling stage is provided with a cooling pipeline. The water pump is connected to the cooling pipeline and is capable of circulating a cooling medium within the cooling pipeline. The water pump circulates the cooling medium within the water cooling stage, thereby maintaining the constant temperature of the water cooling stage, preventing the water cooling stage from dissipating heat to the thermoelectric device, and ensuring a reliable temperature difference.

[0115] The water-cooling stage is equipped with a thermocouple that can be attached to the second working surface of the thermoelectric device to obtain the temperature of the second working surface. The thermocouple allows for direct and reliable detection of the temperature of the second working surface. Because the thermoelectric device is located in a vacuum environment, there is essentially no air between the thermocouple and the second working surface. Therefore, the thermocouple can be considered to be in perfect contact with the second working surface, thereby ensuring accurate detection of the temperature of the second working surface.

[0116] The power supply structure 4 includes a DC power supply and a source meter, which can be electrically connected to the thermoelectric device and the metal film layer, and can provide DC power to the thermoelectric device and / or provide DC power to the metal film layer.

[0117] The testing device further includes a multimeter 5 , which can be electrically connected to the thermoelectric device and the metal thin film layer, and can obtain the output voltage and output current of the thermoelectric device and / or obtain the resistance of the metal thin film layer.

[0118] Specifically, a vacuum test bench is designed and manufactured. The vacuum test bench is divided into a vacuum box 1 and a top cover, a probe station 3, a copper water cooling table and an external circulating cooling water system. It is equipped with four wires for connecting equipment, two cooling water pipes and a barometer for testing the real-time air pressure inside the vacuum box 1. A box of water-absorbing gel is placed inside the box to keep it dry.

[0119] The vacuum box 1 is made of 2.0cm thick acrylic boards, with an overall size of 220mm×220mm×110mm, ensuring that all thermoelectric devices, water-cooling stations, and probe stations 3 can be placed in the vacuum box 1. Use sealant to seal the gaps in the vacuum box 1 to ensure airtightness. A detachable peeling observation window is provided in the center of the top cover of the vacuum box 1 to facilitate observation of the specific conditions of the thermoelectric devices during the test. The vacuum box 1 is preset with through holes, one of which is used to install a barometer to monitor the changes in air pressure inside the vacuum box 1, and the other two through holes are used to connect a vacuum pump for vacuuming and exhausting. The vacuum box 1 is also provided with mounting holes for the flow of cooling medium from the water-cooling station and wire mounting ports for connecting to the probe station 3, thermocouples, and thermoelectric devices, so as to facilitate electrical connection of external test instruments with the corresponding structures in the vacuum box 1.

[0120] The water-cooling platform has an overall thickness of 9.5 mm and dimensions of 20 mm × 20 mm × 9.5 mm. The external water pipe is a 4 mm diameter PU plastic tube. During actual testing, silicone grease is evenly applied to the water-cooling platform to reduce the thermal resistance between the second working surface of the device under test and the water-cooling platform surface. The water-cooling platform is connected to the cooling water system via a cooling water pipe. A small peristaltic pump with a maximum flow rate of 60 mL / min is used to maintain a constant temperature on the water-cooling platform and the lower surface of the device by continuously circulating cooling water. The thermocouple is connected to the interior of the vacuum chamber 1. Microgrooves are drilled on the surface of the water-cooling platform, and micro-thermocouples are placed in the grooves to assist in temperature signal acquisition. The water-cooling platform's strength, cooling capacity, and temperature uniformity have been verified. During thermoelectric device operation, the temperature of the entire cooling area of ​​the water-cooling platform can be controlled within a range of 28 ± 5°C. The inlet temperature of the water-cooling platform can be lowered to meet experimental requirements by adding an ice-water mixture to the water tank or increasing the brine concentration.

[0121] The probe station 3 uses a tungsten needle three-axis probe station 3 with model GCM-5313M, with an overall size of 130mm×60mm×70mm. It is mainly used to conduct the Ni metal film layer integrated on the upper surface of the device (referred to as the measurement unit). Since the overall size of the thermoelectric device is small, the overall size of the metal film layer is also small. Therefore, the probe fixed on the probe station 3 inside the vacuum box 1 is used for electrical connection to monitor the resistance and output power of the test unit. At the same time, based on the real-time resistance of the measurement unit, the specific temperature of the first working surface of the thermoelectric device is calculated. During installation, after fixing the thermoelectric device, first raise the z-axis, and use the alignment system to gradually approach the probe head from the x-axis and y-axis. After reaching the electrode contact set on the measurement unit, lower the z-axis and drop it to the electrode contact. After completing the electrical connection, use a multimeter to test the resistance of the test unit to ensure that the electrical connection is successful.

[0122] A nickel metal film is deposited on the first working surface of the thermoelectric device using a coating process, and the nickel metal film is processed into a certain regular structure using laser processing technology. The measuring unit can accurately collect the temperature of the first working surface of the thermoelectric device, and by energizing the measuring unit, constant-power heating of the first working surface of the thermoelectric device can be achieved.

[0123] The measurement unit data acquisition system consists of a paperless recorder, a regulated and adjustable DC power supply, a KEITHLEY2400 source meter, a KEITHLEY6500 multimeter, etc. When testing the thermal resistance of a thermoelectric device, it is necessary to energize the measurement unit to obtain the accurate heat transfer of the measurement unit to the thermoelectric device, calculate the heat transfer density of the first working surface of the thermoelectric device, couple the temperature difference between the first and second working surfaces of the thermoelectric device with the surface heat transfer density, and calculate the thermal resistance of the thermoelectric device through fitting.

[0124] Example

[0125] Test method for output power of components to be tested

[0126] Design and manufacture a vacuum test bench, which consists of a vacuum box 1 and a top cover, a probe station 3, a copper water-cooling table, and an external circulating cooling water system. It is equipped with four wires for connecting equipment, two cooling water pipes, and a barometer for testing the real-time air pressure inside the vacuum box 1. A box of water-absorbing gel is placed to keep the box dry.

[0127] The vacuum box 1 is made of 2.0cm thick acrylic boards, with an overall size of 220mm×220mm×110mm, ensuring that all thermoelectric devices, water-cooling stations, and probe stations 3 can be placed in the vacuum box 1. Use sealant to seal the gaps in the vacuum box 1 to ensure airtightness. A detachable peeling observation window is provided in the center of the top cover of the vacuum box 1 to facilitate observation of the specific conditions of the thermoelectric devices during the test. The vacuum box 1 is preset with through holes, one of which is used to install a barometer to monitor the changes in air pressure inside the vacuum box 1, and the other two through holes are used to connect a vacuum pump for vacuuming and exhausting. The vacuum box 1 is also provided with mounting holes for the flow of cooling medium from the water-cooling station and wire mounting ports for connecting to the probe station 3, thermocouples, and thermoelectric devices, so as to facilitate electrical connection of external test instruments with the corresponding structures in the vacuum box 1.

[0128] The water-cooling platform has an overall thickness of 9.5 mm and dimensions of 20 mm × 20 mm × 9.5 mm. The external water pipe is a 4 mm diameter PU plastic tube. During actual testing, silicone grease is evenly applied to the water-cooling platform to reduce the thermal resistance between the second working surface of the device under test and the water-cooling platform surface. The water-cooling platform is connected to the cooling water system via a cooling water pipe. A small peristaltic pump with a maximum flow rate of 60 mL / min is used to maintain a constant temperature on the water-cooling platform and the lower surface of the device by continuously circulating cooling water. The thermocouple is connected to the interior of the vacuum chamber 1. Microgrooves are drilled on the surface of the water-cooling platform, and micro-thermocouples are placed in the grooves to assist in temperature signal acquisition. The water-cooling platform's strength, cooling capacity, and temperature uniformity have been verified. During thermoelectric device operation, the temperature of the entire cooling area of ​​the water-cooling platform can be controlled within a range of 28 ± 5°C. The inlet temperature of the water-cooling platform can be lowered to meet experimental requirements by adding an ice-water mixture to the water tank or increasing the brine concentration.

[0129] The probe station 3 uses a tungsten needle three-axis probe station 3 with model GCM-5313M, with an overall size of 130mm×60mm×70mm. It is mainly used to conduct the Ni metal film layer integrated on the upper surface of the device (referred to as the measurement unit). Since the overall size of the thermoelectric device is small, the overall size of the metal film layer is also small. Therefore, the probe fixed on the probe station 3 inside the vacuum box 1 is used for electrical connection to monitor the resistance and output power of the test unit. At the same time, based on the real-time resistance of the measurement unit, the specific temperature of the first working surface of the thermoelectric device is calculated. During installation, after fixing the thermoelectric device, first raise the z-axis, and use the alignment system to gradually approach the probe head from the x-axis and y-axis. After reaching the electrode contact set on the measurement unit, lower the z-axis and drop it to the electrode contact. After completing the electrical connection, use a multimeter to test the resistance of the test unit to ensure that the electrical connection is successful.

[0130] A nickel metal film is deposited on the first working surface of the thermoelectric device using a magnetron sputtering process, and the nickel metal film is processed into a certain regular structure using laser processing technology. The measuring unit can accurately collect the temperature of the first working surface of the thermoelectric device, and by energizing the measuring unit, constant-power heating of the first working surface of the thermoelectric device can be achieved.

[0131] The measurement unit data acquisition system consists of a paperless recorder, a regulated and adjustable DC power supply, a KEITHLEY2400 source meter, a KEITHLEY6500 multimeter, etc. When testing the thermal resistance of a thermoelectric device, it is necessary to energize the measurement unit to obtain the accurate heat transfer of the measurement unit to the thermoelectric device, calculate the heat transfer density of the first working surface of the thermoelectric device, couple the temperature difference between the first and second working surfaces of the thermoelectric device with the surface heat transfer density, and calculate the thermal resistance of the thermoelectric device through fitting.

[0132] Debugging process before testing:

[0133] (1) Water circuit test: including water pump test, water cooling table test, cooling water insulation system test, it is necessary to confirm that each component is operating normally and the interface is leak-free;

[0134] (2) Circuit testing: including the measurement unit initial resistance test, the measurement unit heat source performance test, the measurement unit sensor performance test, and the thermoelectric device load test, which needs to confirm that all components are working properly and the circuit is conducting well;

[0135] (3) Air tightness test: including vacuum pump test, barometer test, and vacuum box 1 air tightness test. It is necessary to confirm that the air tightness of vacuum box 1 is good and the vacuum pump and vacuum gauge can work normally.

[0136] Formal testing steps:

[0137] Start the experimental system

[0138] (1) Correctly install thermoelectric devices and systems;

[0139] (2) Turn on each test instrument and ensure that it is working properly;

[0140] (3) Close the sealing valve of vacuum box 1, turn on the vacuum pump, and wait until the vacuum gauge reading reaches the experimental requirements. Close the valve on one side of the vacuum pump and turn off the vacuum pump to prevent the vibration of the vacuum pump from affecting the test.

[0141] (4) Start the water pump and confirm that the cooling water path is unobstructed;

[0142] Power generation performance testing of thermoelectric devices

[0143] (5) First, perform steps (1) to (4) and start the experimental system;

[0144] (6) turning on a regulated DC power supply of a test device connected to the metal film layer to supply DC power to the metal film layer;

[0145] (7) gradually increasing the output power of the DC power supply to the metal thin film layer, while detecting the real-time resistance of the metal thin film layer, thereby calculating the temperature of the first working surface of the thermoelectric device, and slowly adjusting the input current so that the temperature difference between the first working surface and the second working surface of the thermoelectric device reaches a preset value;

[0146] (8) After the temperature difference stabilizes, use the KEITHLEY2400 source meter connected to the thermoelectric device to record the output power and UI curve of the thermoelectric device at this time;

[0147] (9) After completing this temperature difference test, continue to adjust the output power of the DC power supply to the metal film layer, and repeat steps (7) and (8) to measure the output power and UI curve of the thermoelectric device under multiple temperature differences;

[0148] (10) After the test is completed, the actual Seebeck coefficient of the thermoelectric device is obtained by calculation and fitting, and this group of experiments is completed.

[0149] To ensure the reliability of the experimental data, three sets of repeated experiments were performed to ensure the stability of the results, and then return to step (7) to repeat.

[0150] The fitting results are as follows Figure 6 As shown, Figure 6 The solid line curve in FIG. 1 is the volt-ampere characteristic curve measured for the thermoelectric device, and the internal resistance of the thermoelectric device at room temperature is 0.28Ω.

[0151] Figure 6The multiple dotted lines in the figure are test curves under different temperature differences. As the temperature difference between the first working surface and the second working surface of the thermoelectric device gradually increases, the short-circuit current (the intercept of the test curve with the Y-axis) and open-circuit voltage (the intercept of the test curve with the X-axis) of the thermoelectric device gradually increase. When the temperature difference of the thermoelectric device is 83.19K, the short-circuit current of the thermoelectric device is approximately 120.4mA, and the open-circuit voltage of the thermoelectric device is approximately 174.2mV. The test curve as a whole bends toward the zero point of the coordinate. This is because in the process of thermoelectric device power generation by temperature difference, the thermoelectric microdevice not only has the Seebeck effect that uses temperature difference to generate potential difference, but when the thermoelectric device is connected to the test circuit, the current flowing through the thermoelectric device produces the Peltier effect, which then generates a heating temperature difference. This heating temperature difference is opposite to the temperature difference between the first working surface and the second working surface of the thermoelectric device, but the heating temperature difference is numerically much smaller than the temperature difference between the first working surface and the second working surface of the thermoelectric device, and will change with the current, thus causing the internal resistance of the thermoelectric device to change slightly, resulting in a slight bending of the volt-ampere characteristic curve.

[0152] Figure 7 The relationship between the output power and output voltage of the micro-thermoelectric device calculated from the volt-ampere characteristic curve is shown in the figure. When the load resistance in the external circuit of the thermoelectric device is consistent with the internal resistance of the thermoelectric device, the output power of the thermoelectric device reaches its maximum value. At this time, the output voltage of the thermoelectric device is half of the open-circuit voltage. When the temperature difference of the thermoelectric device is 83.19K, the output power of the thermoelectric device is 4.87mW. The surface area of ​​the thermoelectric device is 0.16cm 2 , so the maximum output power density of the thermoelectric device at this temperature difference is 30.42 m W cm 2 Then, by fitting the output voltage relationship curve of the device under different temperature differences, we can calculate V = 1.96ΔT [mV]. The curve has good linearity, so it can be considered that the effective Seebeck coefficient of the thermoelectric device is 1.96m VK -1 .

[0153] Maximum cooling temperature difference test

[0154] (10) After step (4), after connecting the corresponding testing instruments of the metal film layer, connect the thermoelectric device to a constant voltage DC power supply and turn on the DC power supply;

[0155] (11) Slowly adjust the output power of the DC power supply, synchronously calculate the temperature corresponding to the resistance value of the measurement unit at this time, calculate the specific temperature difference between the first working surface and the second working surface of the thermoelectric device, and finally obtain the maximum cooling temperature difference of the thermoelectric device;

[0156] (12) After obtaining the maximum cooling temperature difference, in order to ensure the accuracy of the experimental results, slowly reduce the output power of the DC power supply of the thermoelectric device until it reaches 0W. After the temperature difference between the first working surface and the second working surface of the thermoelectric device returns to 0K, repeat step (11) three times to ensure the accuracy of the experiment;

[0157] The thermoelectric device was connected to a constant-voltage DC power supply, and the metal film layer (hereinafter referred to as the measurement unit) was connected to a KEITHLEY 6500 multimeter. The input current to the thermoelectric device was then slowly increased, and the temperature value corresponding to the real-time resistance of the measurement unit was calculated. The temperature difference between the first and second working surfaces of the thermoelectric device was noted. The experiment showed that when the input current reached 2.35A, the temperature difference of the thermoelectric device reached near its maximum value. After changing the input current, the temperature difference of the thermoelectric device was allowed to stabilize for 5 minutes. The temperature difference was recorded, and the input current was then slightly increased. The experiment was continued after the temperature difference stabilized. The results shown in Table 1 were obtained.

[0158] Table 1 Maximum refrigeration temperature difference test data

[0159]

[0160] It can be seen from Table 1 that due to the large input current, the Joule heat of the thermoelectric device is obvious. The temperature of the first working surface and the temperature of the second working surface both increase synchronously with the increase of the input current of the thermoelectric device, but the temperature difference of the thermoelectric device still changes. When the input current is 2.40A, the temperature of the first working surface (cold end) of the thermoelectric device is Tc=-5.62℃, and the temperature of the second working surface (hot end) is Th=38.1℃. At this time, the temperature difference between the hot and cold ends of the thermoelectric device reaches ΔT=43.72K. When the current is subsequently increased, the temperature difference between the hot and cold ends of the thermoelectric device gradually decreases. Therefore, it can be judged that the maximum cooling temperature difference of the thermoelectric device is ΔTmax=43.72K, and the corresponding input current is 2.40A. This current value is consistent with the factory parameters of the thermoelectric device, reflecting the accuracy of this test.

[0161] Cooling capacity test

[0162] (13) Return to step (4), connect the metal film layer to the KEITHLEY2400 source meter, and set the current output mode;

[0163] (14) Connect the thermoelectric device to a constant voltage DC power supply and turn on the DC power supply;

[0164] (15) According to the output power of the maximum temperature difference of the thermoelectric device, set the corresponding input current;

[0165] (16) Input a constant current into the metal film layer. After the value stabilizes, calculate the heat generation power of the metal film layer at this time, calculate the temperature of the first working surface of the thermoelectric device at this time, and record the temperature difference between the first working surface and the second working surface of the thermoelectric device at this time;

[0166] (17) increasing the input current of the metal film layer, and after the value stabilizes, repeating step (14) until the temperature difference between the first working surface and the second working surface of the thermoelectric device is close to 0K;

[0167] (18) The cooling power density of the thermoelectric device is obtained by calculation and fitting when the external heat input makes the temperature difference reach 0K under the maximum cooling condition. At this time, the maximum cooling power density of the thermoelectric device can be obtained, and the cooling efficiency COP of the thermoelectric device can be calculated at the same time;

[0168] (19) Change the input current of the thermoelectric device and repeat steps (16)-(18) to obtain the cooling power density of the device under different current inputs. This concludes this experiment. To ensure the reliability of the experimental data, three repeated experiments were performed to ensure stable results.

[0169] After measuring the maximum cooling temperature difference of the thermoelectric device, maintain the input current of 2.40A when the thermoelectric device reaches the maximum cooling temperature difference, connect the measurement unit to the KEITHLEY2400 source meter, turn on the KEITHLEY2400 source meter to the current mode, set the measurement unit input current value to make the temperature of the first working surface of the thermoelectric device rise to a certain level and reach stability. At this time, the measurement unit acts as an input heat source, and the heat transfer is balanced with the cooling capacity of the thermoelectric device and the heat dissipation of the second working surface. Maintain this input current value for a period of time to keep this balance for a period of time to ensure the reliability of the experimental data. Figure 8 As shown in the figure, when the input current to the measurement unit is 0.012A, the temperature of the first working surface of the thermoelectric device reaches stability after approximately 150s. At this time, the heat generation power of the measurement unit and the temperature difference of the thermoelectric device are recorded. The input current of the measurement unit is then changed to further increase the temperature of the device's cold end. It is then maintained for a certain period of time to achieve temperature equilibrium and heat transfer equilibrium. The heat generation power of the measurement unit and the temperature difference between the hot and cold ends are recorded. This experimental operation is repeated several times until the cold end temperature gradually approaches the hot end temperature.

[0170] Because the test environment is a high vacuum environment, and the measurement unit is directly integrated into the surface of the device under test, air heat convection can be ignored and the heat transfer path is single, so the heat generation power of the measurement unit can be regarded as the heat transfer power of the thermoelectric device. Therefore, a relationship diagram between the temperature difference between the hot and cold ends of the thermoelectric device and the heat transfer power density of the cold end of the device is drawn, as shown in the figure below: Figure 9 As shown, the relationship curve is fitted, R 2=0.9979, showing a good linear relationship between the temperature difference between the hot and cold ends of the thermoelectric device and the heat transfer power density at the cold end. The intercept of this curve with the X-axis is the maximum cooling temperature difference of the thermoelectric device, ΔTmax = 43.72K, and its intercept with the Y-axis is the maximum cooling power density of the thermoelectric device, Qcmax = 4.1491W cm -2 , and thus the maximum cooling power density of the thermoelectric device, a key cooling performance parameter, is obtained through fitting calculation. At the same time, the cooling efficiency COP=Qc / P of the thermoelectric device can be calculated based on the load power of the thermoelectric device, and the cooling efficiency of the thermoelectric device at the maximum output power is 3.25%. Then, different input currents are selected to test the cooling power density of the thermoelectric device under other working conditions, such as Figure 10 As shown in the figure, 0.1A, 0.6A and 2.4A at the maximum cooling temperature difference are selected respectively. It can be seen that the temperature difference and cooling power have good linearity under the other two working conditions. When the input current is 0.6A, the cooling power density of TEC4040 is 2.3785W cm -2 When the input current is 0.1A, the cooling power density is 1.0138W cm -2 .

[0171] Refrigeration response time test

[0172] (20) Connecting the metal film layer to a KEITHLEY 6500 multimeter to monitor the resistance change of the metal film layer in real time, and subsequently calculating the real-time temperature change of the first working surface of the thermoelectric device;

[0173] (21) Connect the thermoelectric device to a dual-pulse DC power supply and set a multi-stage current input mode. The current value increases step by step every 140 seconds from 0.0A to 2.0A (that is, the first preset range is 0.0A to 2.0A). Ensure that the thermoelectric device is cooled to a constant temperature before changing it. There are three groups in total.

[0174] (22) After the test is completed, the temperature change of the first working surface of the thermoelectric device before and after the current value changes is analyzed, and 70% of the time required for the temperature to change to the final constant is taken as the cooling response time of the thermoelectric device.

[0175] After the vacuum test system is assembled, a multi-stage current is applied to the thermoelectric device, increasing by 0.5A every 140s from 0.0A to 2.5A. This ensures that after the current increases, the temperature difference between the hot and cold ends of the thermoelectric device has enough time to stabilize, which is convenient for experimental data processing. At the same time, the program is set to perform two cycles to ensure the reliability of the experimental data. After the test is completed, the experimental results are as follows Figure 11 and Figure 12 As shown, Figure 11 is the input current of the thermoelectric device, corresponding to Figure 12The figure is the real-time change curve of the cold end temperature of the thermoelectric device. It can be seen that the cold end temperature of the thermoelectric device continues to decrease during the period from 0.0A to 1.5A, while the cold end temperature of the thermoelectric device increases instead of decreasing when the current is from 1.5A to 2.5A. This is because as the current continues to increase, the Joule heat also gradually increases, which causes the hot end temperature and the cold end temperature of the thermoelectric device to be higher than the initial set value. When the input current of the thermoelectric device reaches 2.5A, the hot end temperature of the thermoelectric device reaches 39.2℃, which is much higher than the initial set value of 25℃. It can be seen that the cooling effect of the thermoelectric device remains consistent in the two cycles, so the cold end temperature change curve of the thermoelectric device near the current change from 0.5A to 1.0A in the first cycle is selected for analysis, as shown in the figure below. Figure 13 As shown in the figure, the cold-end temperature of the thermoelectric device first stabilizes at around 5.9°C. As the current jumps from 0.5A to 1.0A, the cold-end temperature of the thermoelectric device drops sharply, and the temperature stabilizes at 1.64s. According to the definition of response time, the time required for the device to reach 70% of the target temperature can be considered the temperature response time of the thermoelectric device. Therefore, the cooling response time of the thermoelectric device is 1.15s.

[0176] While the present invention has been described with reference to preferred embodiments, various modifications may be made and equivalent components may be substituted without departing from the scope of the present invention. In particular, the various technical features described in the various embodiments may be combined in any manner, provided no structural conflicts exist. The present invention is not limited to the specific embodiments disclosed herein, but encompasses all technical solutions within the scope of the claims.

Claims

1. A method for in-situ testing of comprehensive performance of thermoelectric devices, characterized by: include: Step S1, forming a metal thin film layer on a first working surface of the thermoelectric device by using a coating process; Step S2: electrically connecting the metal film layer and the thermoelectric device to a testing device, and evacuating the area where the thermoelectric device is located; Step S3: controlling the test device according to the test target performance parameters, and recording the data of the metal thin film layer and the thermoelectric device in real time; Step S4, fitting the recorded data to obtain actual performance parameters of the thermoelectric device; The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the following steps are further included: Step b1, controlling the testing device to supply DC power to the thermoelectric device so as to cool the first working surface of the thermoelectric device, and supply DC power to the metal film layer so as to heat the first working surface; Controlling the test device to supply direct current with different current values ​​to the thermoelectric device; Step b2: adjusting the current value of the DC power supply of the metal film layer until the temperature difference between the first working surface and the second working surface reaches a first preset temperature difference value, and recording at least two sets of data during the adjustment process, the data including the real-time resistance value of the metal film layer, the temperature value of the first working surface, and the temperature difference value between the first working surface and the second working surface; The temperature value of the first working surface is calculated based on the real-time resistance value of the metal film layer; Step b3: fitting the recorded data to obtain the cooling power density of the thermoelectric device under the corresponding working current.

2. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 1, characterized in that: Before step S2, the method further includes: The metal film layer is processed according to a preset shape.

3. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 2, characterized in that: The preset shape includes a continuous S-shape or a continuous U-shape.

4. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 1, characterized in that: The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes output power. In step S3, the following steps are further included: Step a1, controlling the testing device to supply DC power to the metal thin film layer to heat the first working surface of the thermoelectric device; Step a2: adjusting the output power of the DC power supply of the testing device so that the temperature difference between the first working surface and the second working surface of the thermoelectric device reaches at least two preset values, and recording the output voltage and output current of the thermoelectric device when the temperature difference reaches any one of the preset values; Step a3: Fit all recorded output voltage values ​​and all recorded output current values ​​to obtain the output power of the component to be tested.

5. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 1, characterized in that: In step b1, the method further includes: Adjusting the current value of the DC power supply supplied by the testing device to the metal film layer, and calculating the real-time temperature difference between the first working surface and the second working surface; When the temperature difference between the first working surface and the second working surface reaches a maximum value, the maximum cooling temperature difference of the thermoelectric device is determined.

6. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 5, characterized in that: The thermoelectric device has a second working surface opposite to the first working surface, and the target performance parameter includes a cooling performance parameter. In step S3, the following steps are further included: Step c1, controlling the testing device to supply DC power to the thermoelectric device so as to cool the first working surface of the thermoelectric device; Step c2: adjusting the current value of the DC power supply of the thermoelectric device, and recording the time point of the current value change and the duration from the start of the change to the stop of the change of the temperature of the first working surface; Step c3: Fitting the recorded change time points and duration periods to obtain the cooling response time of the thermoelectric device.

7. The in-situ testing method for comprehensive performance of thermoelectric devices according to claim 6, characterized in that: In step c1, the method further includes: The constant temperature device in the test device is controlled to operate so as to perform constant temperature cooling on the second working surface of the thermoelectric device.

8. An in-situ testing device for comprehensive performance of thermoelectric devices, characterized by: An in-situ testing method for comprehensive performance of a thermoelectric device according to any one of claims 1 to 7.

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