Double-pulse test system and method for power semiconductor device of integrated temperature control module

Abstract

The invention discloses a power semiconductor device dipulse test system and method integrated with a temperature control module, the test system is small in size and portable, is integrated with a temperature control heater, can measure the dynamic parameters of a power semiconductor device from room temperature to the maximum junction temperature of a chip, and can determine the temperature of the power semiconductor device through the comparison of the dynamic parameters in the temperature range. The method can guide an engineer to perform reasonable device model selection, helps the engineer to deeply understand the influence of the temperature on the device performance, can optimize the system design, improves the reliability and efficiency of the device in practical application, and meets the industrial standard requirements at the same time. Moreover, the test method is simple, the potential of the power semiconductor device can be known to the greatest extent through the tests, and the stable operation of the power semiconductor device under various environmental conditions is ensured.

Description

Technical Field

[0001] The present invention belongs to the technical field of power semiconductor device testing, and can be used to measure switch performance parameters and body diode reverse recovery characteristics of power semiconductor devices, and specifically is a power semiconductor device double pulse testing system and method with an integrated temperature control module. Background Art

[0002] Power semiconductor devices (such as IGBT, MOSFET, SiC MOSFET, GaN HEMT, etc.) are core components of modern power electronics technology and are widely used in power conversion, electric vehicles, power management, industrial motor drives and other fields. With the increasing demand for high efficiency, high frequency and high power density, the performance requirements of power semiconductor devices are becoming more and more stringent. The dynamic behavior of these devices under high voltage, high current and high-speed switching conditions has an important impact on their working stability and life. Therefore, accurately evaluating their switching characteristics and losses is a key step in designing, optimizing and verifying power electronic systems. However, the dynamic parameters of power semiconductor devices (such as turn-on time, turn-off time, switching loss, reverse recovery characteristics, etc.) are usually sensitive to temperature. Power semiconductor devices are often exposed to a wide range of temperature environments in applications. For example, the inverter of an electric vehicle may experience temperature changes from -40°C to 150°C. Many industry standards in the field of power electronics (such as AEC-Q101, JEDECJESD22) require dynamic performance verification of devices over the full temperature range. It is necessary to ensure that the switching performance of the device is stable under high temperature or extreme cold conditions to avoid failure in critical applications. Rising temperature may lead to reduced carrier mobility, thus slowing down the switching speed. Slower switching speeds increase switching losses and may cause oscillation or overshoot problems during the switching process. At the same time, due to the increase in on-resistance and turn-off time at high temperatures, switching losses may increase significantly, affecting the efficiency and heat dissipation design of the system. For the body diode part of a diode or power device, its reverse recovery time and peak current fluctuate with temperature. At high temperatures, the reverse recovery time usually becomes longer, resulting in higher electromagnetic interference (EMI) and greater switching losses. Therefore, measuring dynamic parameters at different temperatures can help engineers predict efficiency changes at different temperatures, optimize system design, and guide engineers to make reasonable device selections. Summary of the invention

[0003] In view of the deficiencies in the prior art, the present invention provides a dual-pulse testing system and method for power semiconductor devices with an integrated temperature control module, which can measure dynamic parameters from room temperature to the maximum junction temperature of the chip, and can effectively reflect the dynamic parameters of the device at different junction temperatures.

[0004] The technical solution of the present invention to solve the technical problem is to design a double-pulse test system for power semiconductor devices with an integrated temperature control module, characterized in that the test system includes a test circuit and a temperature control module, and the test circuit includes a DC bus voltage source, a bus capacitor, a manual switch, a first resistor, a second capacitor, a second resistor, a first device under test, a second device under test, a load inductor, and a single-pole double-throw switch;

[0005] The positive electrode of the DC bus voltage source is electrically connected to one end of the bus capacitor, pin No. 1 of the manual switch, one end of the second capacitor, the drain of the first device under test, and pin No. 1 of the single-pole double-throw switch; the negative electrode of the DC bus voltage source is electrically connected to the other end of the bus capacitor, one end of the first resistor, one end of the second resistor, the source of the second device under test, and pin No. 2 of the single-pole double-throw switch; the other end of the first resistor is electrically connected to pin No. 2 of the manual switch, the other end of the second capacitor is electrically connected to the other end of the second resistor, the source of the first device under test, the drain of the second device under test, and one end of the load inductor The three are electrically connected; the other end of the load inductor is electrically connected to pin 3 of the single-pole double-throw switch; when pin 1 and pin 2 of the manual switch are connected, the first resistor is connected in parallel to the test circuit; pin 3 of the single-pole double-throw switch is connected to pin 1 or pin 2; when measuring the switching characteristics of the first device under test and the reverse recovery characteristics of the body diode of the second device under test, pin 3 of the single-pole double-throw switch is connected to pin 2; when measuring the switching characteristics of the second device under test and the reverse recovery characteristics of the body diode of the first device under test, pin 3 of the single-pole double-throw switch is connected to pin 1;

[0006] The temperature control module includes a controller, a heater and a thermocouple, wherein the heater is composed of two ceramic heating plates, the first device under test and the second device under test are arranged side by side, and the two ceramic heating plates are respectively arranged on the front and rear sides of the two devices under test, and the front and rear sides of the two devices under test are heated at the same time; the temperature sensing end of the thermocouple is arranged between the ceramic heating plates of the device under test, and is used to detect the real-time temperature of the device under test, and the signal output end of the thermocouple is electrically connected to the controller; the thermocouple is a temperature sensor, which is responsible for converting the temperature into an electrical signal and transmitting the real-time temperature information to the controller; the two ceramic heating plates are electrically connected to the controller, and a target temperature is preset inside the controller. When it receives the current temperature signal sent by the thermocouple, it makes a decision based on the difference between the target temperature and the current temperature, and sends a control signal to turn on or off the ceramic heating plate to ensure that the temperature is maintained within the set range.

[0007] Furthermore, the present invention designs a double pulse test method for a power semiconductor device with an integrated temperature control module, characterized in that the test method is based on the test system as described above, and is described by taking the measurement of the body diode reverse recovery performance of the first device under test and the switching transient dynamic parameter performance of the second device under test as an example, and the test method adopts the following steps:

[0008] Step 1): Set the test temperature and the conduction time of the first and second devices under test

[0009] Turn on the temperature control module, set the test temperature in the controller, and power the heater to heat the first device under test and the second device under test to the test temperature; set the two pulse-related parameter values ​​for controlling the on and off of the second device under test, where T1 is the first on time of the second device under test, which is set as:

[0010]

[0011] Where L0 represents the inductance value of the load inductor; I sat Represents the current value on the load inductor during the switching transient of the second device under test; V dc Represents the DC bus voltage value;

[0012] The turn-off time T2 of the second device under test is 2 μs; the second turn-on time T3 of the second device under test is greater than 1 μs and less than 0.5 times of T1;

[0013] During the entire test process, a negative voltage is applied to the gate of the first device under test to ensure that it is completely turned off;

[0014] Step 2) Turn on the test system, connect the No. 3 pin of the single-pole double-throw switch to its No. 1 pin, and disconnect the manual switch; set time t1 as the start time of the second device under test being turned on, the second device under test receives the first pulse signal, the load inductor stores energy, and maintains the first pulse signal T1 duration;

[0015] Step 3) setting time t2 as the end time of the first pulse signal, at which time the second device under test is turned off and the load inductor is discharged; at time t2, using an oscilloscope to perform a dynamic performance test of the second device under test in the turn-off phase;

[0016] Step 4) Maintain the off state of the second device under test for a time period of T2, and at time t3, the second device under test receives the second pulse signal, and the second device under test is turned on; maintain the loading of the second pulse signal for a time period of T3; at time t3, use an oscilloscope to perform a dynamic performance test of the second device under test during the turn-on phase and a reverse recovery performance test of the body diode of the first device under test;

[0017] Step 5) At time t4, the second device under test is turned off, the DC bus voltage source U is turned off, and the manual switch is closed to form a path among the bus capacitor, the manual switch, and the first resistor, and the bus capacitor is discharged through the first resistor; after waiting for 5 seconds, the temperature control module is turned off, and the double pulse test is completed.

[0018] Compared with the prior art, the beneficial effects of the present invention are as follows: the dual pulse test system with integrated temperature control module designed by the present invention is compact and portable, and has an integrated temperature control heater, which can measure the dynamic parameters of power semiconductor devices from room temperature to the maximum junction temperature of the chip. By comparing the dynamic parameters within the temperature range, it can guide engineers to make reasonable device selections, help engineers to deeply understand the impact of temperature on device performance, and optimize system design, improve the reliability and efficiency of devices in practical applications, and meet industry standard requirements. In addition, the test method is simple, and through these tests, the potential of power semiconductor devices can be understood to the greatest extent, ensuring their stable operation under various environmental conditions. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a test circuit topology diagram of an embodiment of a double pulse test system for power semiconductor devices with an integrated temperature control module of the present invention.

[0020] Figure 2 The present invention provides a temperature control module operating principle and flow chart of an embodiment of a power semiconductor device double pulse test system with an integrated temperature control module.

[0021] Figure 3 The figure is a schematic diagram of the installation of the device under test and the heater of an embodiment of the double pulse test system for power semiconductor devices with integrated temperature control module of the present invention.

[0022] Figure 4 This is a schematic diagram of the double pulse signal control time of the second device under test in one embodiment of the double pulse test method for power semiconductor devices with integrated temperature control module of the present invention. DETAILED DESCRIPTION

[0023] Specific embodiments will be given below in conjunction with the accompanying drawings. The specific embodiments are only used to introduce the technical solutions of the present invention in detail and are not intended to limit the protection scope of the present application.

[0024] The present invention designs a double pulse test system and method with an integrated temperature control module for power semiconductor devices in TO-247 package, which can measure dynamic parameters from room temperature to the maximum junction temperature of the chip and effectively reflect the dynamic parameters of the device at different junction temperatures.

[0025] The present invention provides a double-pulse test system for power semiconductor devices with an integrated temperature control module (test system for short). The test system comprises a test circuit and a temperature control module. The test circuit comprises a DC bus voltage source U, a bus capacitor C1, a manual switch S1, a first resistor R1, a second capacitor C2, a second resistor R2, a first device under test Q1, a second device under test Q2, a load inductor L, and a single-pole double-throw switch S2.

[0026] The positive electrode of the DC bus voltage source U is respectively electrically connected to one end of the bus capacitor C1, pin 1 of the manual switch S1, one end of the second capacitor C2, the drain of the first device under test Q1, and pin 1 of the single-pole double-throw switch S2; the negative electrode of the DC bus voltage source U is respectively electrically connected to the other end of the bus capacitor C1, one end of the first resistor R1, one end of the second resistor R2, the source of the second device under test Q2, and pin 2 of the single-pole double-throw switch S2; the other end of the first resistor R1 is electrically connected to pin 2 of the manual switch S1. The first pin of the single-pole double-throw switch S2 is electrically connected to the first pin of the single-pole double-throw switch S2, the other end of the second capacitor C2 is electrically connected to the other end of the second resistor R2, and the source of the first device under test Q1, the drain of the second device under test Q2 and one end of the load inductor L are electrically connected; the other end of the load inductor L is electrically connected to the No. 3 pin of the single-pole double-throw switch S2; when the No. 1 pin and the No. 2 pin of the manual switch S1 are connected (i.e. the manual switch S1 is closed), the first resistor R1 is connected in parallel to the test circuit; the No. 3 pin of the single-pole double-throw switch S2 is connected to its No. 1 pin or No. 2 pin. When measuring the switching characteristics of the first device under test Q1 and the body diode reverse recovery characteristics of the second device under test Q2, the No. 3 pin of the single-pole double-throw switch S2 is connected to its No. 2 pin; when measuring the switching characteristics of the second device under test Q2 and the body diode reverse recovery characteristics of the first device under test Q1, the No. 3 pin of the single-pole double-throw switch S2 is connected to its No. 1 pin.

[0027] Figure 1 The figure shows a test circuit topology diagram of a dual pulse test system with an integrated temperature control module of the present invention, wherein U is the bus voltage provided for the test, C1 is the bus capacitance, and provides an instantaneous large current for the test. During the test, the DC bus voltage remains constant, and the test circuit should ensure a sufficiently large DC bus capacitance. The DC bus capacitance value is determined according to the following formula:

[0028]

[0029] Where a represents the bus voltage fluctuation rate; C dc represents the capacitance value of bus capacitor C1; L0 represents the inductance value of load inductor L; I L Represents the current value on the load inductor L; V dc Represents the DC bus voltage value.

[0030] The first resistor R1 is connected in parallel with the manual switch S1 to form a discharge circuit, and the discharge circuit is connected in parallel at both ends of the bus capacitor C1. When the test is completed, the manual switch S1 is closed, and the bus capacitor C1 is discharged through the first resistor R1. The second resistor R2 is connected in series with the second capacitor C2 and then connected in parallel at both ends of the bus capacitor C1. In the actual operation process, the second resistor R2 and the second capacitor C2 should be close to the first device under test Q1 to absorb the oscillation generated on the bus voltage during the switching process to ensure the correctness of the measurement results. Q1 and Q2 are the devices under test, and the two are connected in series to form a half-bridge module, in which the source of Q1 is connected to the drain of Q2 and is also connected to one end of the load inductor L, and the other end of the load inductor is connected to one end of the switch S2. S2 is a single-pole double-throw switch that controls the connection method of the load inductor L.

[0031] The temperature control module includes a controller, a heater and a thermocouple, wherein the heater is composed of two ceramic heating plates. The first device under test Q1 and the second device under test Q2 are arranged side by side, and the two ceramic heating plates are respectively arranged on the front and rear sides of the two devices under test, and the front and rear sides of the two devices under test are heated at the same time; the temperature sensing end of the thermocouple is arranged between the ceramic heating plates of the device under test, and is used to detect the real-time temperature of the device under test, and the signal output end of the thermocouple is electrically connected to the controller. The thermocouple is a temperature sensor that is responsible for converting temperature into an electrical signal (millivolt level) and transmitting real-time temperature information to the controller. The two ceramic heating plates are electrically connected to the controller, and the controller has a preset target temperature. When it receives the current temperature signal sent by the thermocouple, it makes a decision based on the difference between the target temperature and the current temperature, and sends a control signal to turn on or off the ceramic heating plate to ensure that the temperature is maintained within the set range.

[0032] Figure 2 This is the working flow chart of the temperature control module. The control process is as follows: after the power is turned on, the controller is initialized to detect whether the ceramic heater and the thermocouple are normal. After the initialization is completed, it enters the working state. The thermocouple monitors the temperature of the ceramic heating plate in real time and converts the temperature signal into an electrical signal and transmits it to the controller. The controller receives the temperature signal of the thermocouple and compares it with the set target temperature. When the current temperature is lower than the set value, the controller outputs an instruction to turn on the ceramic heating plate; when the current temperature reaches or exceeds the set value, the controller outputs an instruction to turn off the heating plate. According to the instructions output by the controller, the ceramic heating plate is activated or turned off to achieve dynamic adjustment of the ambient temperature. Continuously monitor the temperature and make real-time adjustments to form a temperature closed-loop control process to ensure that the temperature of the ceramic heating plate is stable within the target range.

[0033] Figure 3The figure is a schematic diagram of the arrangement of the heater and the device under test. 1 and 4 are two ceramic heating plates, 2 and 3 are the devices under test. During the specific test, the ceramic heating plates are placed close to the front and back of the device to heat the device under test, and a thermocouple is inserted between the back of the device and the ceramic heating plate for temperature measurement. The temperature data measured by the thermocouple is transmitted to the controller, and the controller controls the power of the ceramic heating plate to finally make the device temperature reach the set temperature.

[0034] Furthermore, the present invention provides a double pulse test method for a power semiconductor device with an integrated temperature control module, taking the measurement of the reverse recovery performance of the body diode of the first device under test Q1 (taking SiC MOSFET as an example) and the switching transient dynamic parameter performance of the second device under test Q2 (taking SiC MOSFET as an example) as an example, the test method adopts the above-mentioned test system and the following steps:

[0035] Step 1): Set the test temperature and the conduction time of the first device under test Q1 and the second device under test Q2

[0036] Turn on the temperature control module, set the test temperature in the controller, and power on the heater to heat the first device under test Q1 and the second device under test Q2 to the test temperature. Set the two pulse-related parameter values ​​that control the conduction and shutdown of the second device under test Q2. Figure 4 Shown is a schematic diagram of double pulse signal control of the second device under test Q2.

[0037] Wherein, T1 is the first conduction time length of the second device under test Q2, which is set as:

[0038]

[0039] Where L0 represents the inductance value of the load inductor L; I sat Represents the current value on the load inductor L when the second device under test Q2 switches in transient state; V dc Represents the DC bus voltage value.

[0040] At time t1, the second device under test Q2 is turned on, and at time t2, the second device under test Q2 is turned off. It is necessary to pay attention to the entire process from the gate voltage of the second device under test Q2 to the end of the drain-source voltage oscillation. Therefore, the value of the turn-off time T2 generally needs to be greater than 1μs. On the other hand, within the pulse width, I L If the drop is too large, the parameter measurement of the second device under test, Q2, will be inaccurate. Therefore, the value of T2 should not be too long, and should be selected according to the actual test situation. 2μs is usually selected.

[0041] At time t3, the second device under test Q2 is turned on, and attention should be paid to the entire process from the rise of the gate voltage of the second device under test Q2 to the end of the drain-source current oscillation. Therefore, the value of the second on-time T3 of the second device under test Q2 generally needs to be greater than 1μs. On the other hand, the drain-source current of the second device under test Q2 continues to rise during the second pulse. Excessive current will cause the turn-off voltage spike to be too high, which will cause device damage when it exceeds the device withstand voltage. Therefore, the value of T3 should not be too large, and is generally less than 0.5 times of T1.

[0042] During the entire test process, a negative voltage should be applied to the gate of the first device under test Q1 to ensure that it is completely turned off.

[0043] Step 2) Turn on the test system, connect pin 3 of the single-pole double-throw switch to pin 1, and disconnect the manual switch S1; set time t1 as the start time of the second device under test Q2 turning on, the second device under test Q2 receives the first pulse signal, and the load inductor L stores energy to maintain the loading of the first pulse signal for a duration of T1.

[0044] Specifically, when the first pulse signal arrives, the second device under test Q2 is turned on, and the DC bus voltage source U, the load inductor L and the second device under test Q2 form a path. At this time, the load inductor L is charged, and the current on the load inductor L continues to rise. At time t2, it reaches the set value I set .

[0045] Step 3) Set time t2 as the end time of the first pulse signal, at which time the second device under test Q2 is turned off and the load inductor L is discharged. At time t2, use an oscilloscope to perform a dynamic performance test of the second device under test Q2 during the turn-off phase.

[0046] Specifically, at time t2, the first pulse signal ends, and the second device under test Q2 begins to shut down. At this time, due to the existence of the load inductance L, the current in the path described in step 2 cannot change suddenly, that is, at time t2, the second device under test Q2 is at the set value I set The second device under test Q2 is turned off under current, and an oscilloscope is used to test the dynamic performance of the second device under test Q2 during the turn-off phase. The dynamic performance indicators of the second device under test Q2 during the turn-off phase are turn-off delay time, fall time, turn-off time, and turn-off loss.

[0047] Furthermore, the turn-off delay time t d(off) It is defined as: during the shutdown process, the time interval from the gate-source voltage of the second device under test Q2 drops to 90% to the drain-source current of the second device under test Q2 drops to 90%. Fall time t f Defined as the time interval for the drain-source current of the second device under test, Q2, to rise from 90% to 10%. offDefined as the turn-off delay time t d(off) With the fall time t f The turn-off loss is defined as: During the turn-off process, the drain-source voltage V DS and the drain-source current I DS The integral value of the product, the integral interval is from the moment when the gate-source voltage of the second device under test Q2 drops to 90% to the moment when the drain-source current of the second device under test Q2 drops to 3%. The above parameters are read by an oscilloscope to complete the dynamic performance test of the second device under test Q2 during the turn-off phase. Then the second device under test Q2 is completely turned off, the load inductor L forms a path with the body diode of the first device under test Q1, and the load inductor L discharges.

[0048] Step 4) Maintain the off state of the second device under test Q2 for T2 time. At time t3, the second device under test Q2 receives the second pulse signal and the second device under test Q2 is turned on. Maintain the loading of the second pulse signal for T3 time. At time t3, use an oscilloscope to perform a turn-on phase dynamic performance test of the second device under test Q2 and a reverse recovery performance test of the body diode of the first device under test Q1.

[0049] Specifically, at time t3, the second pulse signal starts, and at this time, the second device under test Q2 starts to turn on. Since the inductor current cannot change suddenly, the bus capacitor C1 provides high voltage and instantaneous large current. Therefore, it can be approximately considered that the current on the load inductor L at this moment is the set value I set , that is, at time t3, the second device under test Q2 is at the set value I set At t3, the second device under test Q2 is turned on at a current of 100V and the first device under test Q1 is turned on at a current of 100V. At t4, the oscilloscope is used to test the dynamic performance of the second device under test Q2 during the turn-on phase and the reverse recovery performance of the body diode of the first device under test Q1. The dynamic performance indicators of the second device under test Q2 during the turn-on phase include turn-on delay time, rise time, turn-on time, and turn-on loss.

[0050] Furthermore, the opening delay time t d(on) It is defined as: during the turn-on process, the time interval from the gate-source voltage of the second device under test Q2 rising to 10% to the drain-source current of the second device under test Q2 rising to 10%. Rise time t r Defined as: the time interval for the drain-source current of the second device under test Q2 to rise from 10% to 90%. Turn-on time t on is the sum of the turn-on delay time and the rise time. The turn-on loss is defined as: During the turn-on process, the drain-source voltage V DS and the drain-source current I DSThe integral value of the product, the integral interval is from the moment when the gate-source voltage of the second device under test Q2 rises to 10% to the moment when the drain-source voltage of the second device under test Q2 drops to 3%. The reverse recovery performance indicators of the body diode of the first device under test Q1 include reverse recovery time and reverse recovery charge. Further, the reverse recovery time t rr It is defined as: During the reverse recovery process, the source-drain current of the first device under test Q1 changes from 0 to the reverse recovery current peak value I rr The reverse recovery charge Q rr Defined as: During the reverse recovery process, the source-drain current I SD The integral value, integral interval and t rr The definitions are the same. The above parameters are read using an oscilloscope to complete the turn-on phase dynamic performance test of the second device under test Q2 and the reverse recovery performance test of the body diode of the first device under test Q1.

[0051] Step 5) At time t4, the second device under test Q2 is turned off, the capacitor voltage is discharged, and the temperature control module is turned off.

[0052] Specifically, after completing the double pulse test, turn off the DC bus voltage source U, close the manual switch S1, so that the bus capacitor C1, the manual switch S1, and the first resistor R1 form a path, and the bus capacitor C1 is discharged through the first resistor R1. After waiting for 5 seconds, turn off the temperature control module.

[0053] When measuring the switching transient dynamic parameters of the first device under test Q1 (taking SiC MOSFET as an example) and the body diode reverse recovery performance of the second device under test Q2 (taking SiC MOSFET as an example), the above operations on the first device under test Q1 and the second device under test Q2 can be swapped.

[0054] In order to facilitate the on / off control of the signal, as an embodiment, the positive output of the first driving module is connected to the gate of the first device under test Q1, and the negative electrode of the first driving module is connected to the source of the first device under test Q1; the positive output of the second driving module is connected to the gate of the second device under test Q2, and the negative electrode of the second driving module is connected to the source of the second device under test Q2. The first driving module and the second driving module respectively control the on / off of the first device under test Q1 and the second device under test Q2. The first driving module and the second driving module are respectively connected to a signal generator, and a signal emitted by a signal generator is input to the corresponding driving module. When the driving module is in the on mode, the signal is input to the corresponding device under test, and when the driving module is in the off mode, the corresponding device under test is in the off state.

[0055] Any matters not described in the present invention are applicable to the prior art.

Claims

1. A double pulse test system for power semiconductor devices with integrated temperature control module, characterized in that: The test system includes a test circuit and a temperature control module, wherein the test circuit includes a DC bus voltage source, a bus capacitor, a manual switch, a first resistor, a second capacitor, a second resistor, a first device under test, a second device under test, a load inductor, and a single-pole double-throw switch; The positive electrode of the DC bus voltage source is electrically connected to one end of the bus capacitor, pin No. 1 of the manual switch, one end of the second capacitor, the drain of the first device under test, and pin No. 1 of the single-pole double-throw switch; the negative electrode of the DC bus voltage source is electrically connected to the other end of the bus capacitor, one end of the first resistor, one end of the second resistor, the source of the second device under test, and pin No. 2 of the single-pole double-throw switch; the other end of the first resistor is electrically connected to pin No. 2 of the manual switch, the other end of the second capacitor is electrically connected to the other end of the second resistor, the source of the first device under test, the drain of the second device under test, and one end of the load inductor The three are electrically connected; the other end of the load inductor is electrically connected to pin 3 of the single-pole double-throw switch; when pin 1 and pin 2 of the manual switch are connected, the first resistor is connected in parallel to the test circuit; pin 3 of the single-pole double-throw switch is connected to pin 1 or pin 2; when measuring the switching characteristics of the first device under test and the reverse recovery characteristics of the body diode of the second device under test, pin 3 of the single-pole double-throw switch is connected to pin 2; when measuring the switching characteristics of the second device under test and the reverse recovery characteristics of the body diode of the first device under test, pin 3 of the single-pole double-throw switch is connected to pin 1; The temperature control module includes a controller, a heater and a thermocouple, wherein the heater is composed of two ceramic heating plates, the first device under test and the second device under test are arranged side by side, and the two ceramic heating plates are respectively arranged on the front and rear sides of the two devices under test, and the front and rear sides of the two devices under test are heated at the same time; the temperature sensing end of the thermocouple is arranged between the ceramic heating plates of the device under test, and is used to detect the real-time temperature of the device under test, and the signal output end of the thermocouple is electrically connected to the controller; the thermocouple is a temperature sensor, which is responsible for converting the temperature into an electrical signal and transmitting the real-time temperature information to the controller; the two ceramic heating plates are electrically connected to the controller, and a target temperature is preset inside the controller. When it receives the current temperature signal sent by the thermocouple, it makes a decision based on the difference between the target temperature and the current temperature, and sends a control signal to turn on or off the ceramic heating plate to ensure that the temperature is maintained within the set range.

2. The power semiconductor device double pulse test system with integrated temperature control module according to claim 1, characterized in that: Busbar capacitance value: Where a represents the bus voltage fluctuation rate; C dc represents the capacitance value of the bus capacitor; L0 represents the inductance value of the load inductor; I represents the current value on the load inductor; V dc Represents the DC bus voltage value.

3. A double pulse test method for power semiconductor devices with integrated temperature control modules, characterized in that: The test method is based on the test system according to any one of claims 1 to 2, and is described by taking the measurement of the body diode reverse recovery performance of the first device under test and the switching transient dynamic parameter performance of the second device under test as an example. The test method adopts the following steps: Step 1): Set the test temperature and the conduction time of the first and second devices under test Turn on the temperature control module, set the test temperature in the controller, and power the heater to heat the first device under test and the second device under test to the test temperature; set the two pulse-related parameter values ​​for controlling the on and off of the second device under test, where T1 is the first on time of the second device under test, which is set as: Where L0 represents the inductance value of the load inductor; I sat Represents the current value on the load inductor during the switching transient of the second device under test; V dc Represents the DC bus voltage value; The turn-off time T2 of the second device under test is 2 μs; the second turn-on time T3 of the second device under test is greater than 1 μs and less than 0.5 times of T1; During the entire test process, a negative voltage is applied to the gate of the first device under test to ensure that it is completely turned off; Step 2) Turn on the test system, connect the No. 3 pin of the single-pole double-throw switch to its No. 1 pin, and disconnect the manual switch; set time t1 as the start time of the second device under test being turned on, the second device under test receives the first pulse signal, the load inductor stores energy, and maintains the first pulse signal T1 duration; Step 3) setting time t2 as the end time of the first pulse signal, at which time the second device under test is turned off and the load inductor is discharged; at time t2, using an oscilloscope to perform a dynamic performance test of the second device under test in the off phase; Step 4) Maintain the off state of the second device under test for T2 time, and at time t3, the second device under test receives the second pulse signal and is turned on; maintain the loading of the second pulse signal for T3 time; at time t3, use an oscilloscope to perform a turn-on phase dynamic performance test of the second device under test and a reverse recovery performance test of the body diode of the first device under test; Step 5) At time t4, the second device under test is turned off, the DC bus voltage source U is turned off, and the manual switch is closed to form a path among the bus capacitor, the manual switch, and the first resistor, and the bus capacitor is discharged through the first resistor; after waiting for 5 seconds, the temperature control module is turned off, and the double pulse test is completed.

4. The double pulse test method for power semiconductor devices with integrated temperature control module according to claim 3, characterized in that: The second dynamic performance indicators of the device under test during the shutdown phase are shutdown delay time, fall time, shutdown time, and shutdown loss.

5. The double pulse test method for power semiconductor devices with integrated temperature control module according to claim 3, characterized in that: The dynamic performance indicators of the second device under test during the turn-on phase include turn-on delay time, rise time, turn-on time, and turn-on loss.

6. The double pulse test method for power semiconductor devices with integrated temperature control module according to claim 3, characterized in that: The reverse recovery performance indicators of the body diode of the first device under test include reverse recovery time and reverse recovery charge.

7. The power semiconductor device double pulse test system with integrated temperature control module according to claim 1, characterized in that: The positive output of the first driving module is connected to the gate of the first device under test, and the negative electrode of the first driving module is connected to the source of the first device under test; the positive output of the second driving module is connected to the gate of the second device under test, and the negative electrode of the second driving module is connected to the source of the second device under test; the first driving module and the second driving module respectively control the conduction and shutdown of the first device under test and the second device under test; the first driving module and the second driving module are respectively connected to a signal generator, and a signal emitted by a signal generator is input to the corresponding driving module. When the driving module is in the conduction mode, the signal is input to the corresponding device under test, and when the driving module is in the shutdown mode, the corresponding device under test is in the shutdown state.

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