Method for improving cleaning capacity of AAMT-CMP machine table

Abstract

The invention relates to a method for improving the cleaning capability of an AMAT-CMP machine, which belongs to the technical field of silicon wafer processing equipment, and comprises the following operation steps: 1, adopting a silicon-based cleaning composite lotion, and adding a chelating agent and a surfactant into the silicon-based cleaning composite lotion; and 2, adjusting the DHF concentration to 0.2-0.5%, and properly increasing the cleaning temperature to 30-40 DEG C so as to enhance the etching rate of the DHF to the oxide and maintain low damage to the wafer at the same time. 3, finely adjusting the ratio of ammonia water to hydrogen peroxide in SC1, and controlling the temperature at 45-55 DEG C; and 4, after the cleaning agent acts, thoroughly washing the surface of the wafer by using DIW so as to ensure that no residue exists. The device has the advantages of convenient operation, good operation stability and good effect. The defect rate caused by improper cleaning of the wafer is reduced, the overall production efficiency and the product yield are improved, and a more efficient and reliable cleaning solution is provided for the semiconductor manufacturing industry.

Description

Technical Field

[0001] The invention relates to the technical field of silicon wafer processing equipment, and in particular to a method for improving the cleaning ability of an AMAT-CMP machine. Background Art

[0002] In the semiconductor manufacturing process, CMP is a key planarization technology used to remove excess material layers on the wafer surface and achieve global planarization. However, after the CMP process, pollutants such as polishing liquid, abrasive particles, and metal ions often remain on the wafer surface, which can seriously affect subsequent process steps and the performance of the final product.

[0003] Therefore, effective cleaning steps are crucial to ensure wafer quality. Currently, AMAT-CMP machines generally use a variety of cleaning agents including Silapur (silicon-based cleaning agent), DHF (diluted hydrofluoric acid), SC1 (standard cleaning solution 1, mainly composed of ammonia, hydrogen peroxide and water) for cleaning, but the existing cleaning solutions still have room for improvement in cleaning efficiency and effect. Summary of the invention

[0004] The present invention mainly solves the deficiencies in the prior art and provides a method for improving the cleaning ability of an AMAT-CMP machine, which has the advantages of convenient operation, good running stability and good effect. It reduces the defect rate of wafers caused by improper cleaning, improves the overall production efficiency and product yield, and provides a more efficient and reliable cleaning solution for the semiconductor manufacturing industry.

[0005] The above technical problems of the present invention are mainly solved by the following technical solutions: A method for improving the cleaning capability of an AMAT-CMP machine comprises the following steps: The first step: using a silicon-based cleaning compound detergent, and adding a chelating agent and a surfactant into the silicon-based cleaning compound detergent.

[0006] Step 2: Adjust the DHF concentration to 0.2%~0.5%, and appropriately increase the cleaning temperature to 30℃~40℃ to enhance its etching rate for oxide while maintaining low damage to the wafer.

[0007] Step 3: Fine-tune the ratio of ammonia water to hydrogen peroxide in SC1 and control the temperature between 45°C and 55°C.

[0008] Step 4: After the cleaning agent has taken effect, use DIW to thoroughly rinse the wafer surface to ensure that there is no residue.

[0009] Preferably, the silicon-based composite cleaning agent can more effectively combine with metal ions and enhance the solubility of organic matter. The concentration of the silicon-based composite cleaning agent is determined to be 0.5% to 1.0%, which can not only ensure the cleaning efficiency but also avoid wafer damage caused by excessive cleaning.

[0010] Preferably, when cleaning with the silicon-based composite detergent, ultrasound is turned on and the ultrasound frequency is 33 to 45 KHZ.

[0011] Preferably, by increasing the DIW rinse time by at least 30 seconds and using high-pressure spray technology, it is ensured that each wafer surface can be fully rinsed, all residual cleaning agents and contaminants are effectively removed, and the high cleanliness of the wafer surface is guaranteed.

[0012] Preferably, the surfactant is a fatty alcohol polyoxyethylene ether nonionic surfactant, and the organic alcohol is selected from at least one of methanol, ethanol, propanol, butanol, pentanol and hexanol.

[0013] Preferably, the chelating agent is at least one of polyphosphate, aminocarboxylic acid, 1,3-diketone, hydroxycarboxylic acid and polyamine.

[0014] The present invention can achieve the following effects: The present invention provides a method for improving the cleaning ability of an AMAT-CMP machine, which has the advantages of convenient operation, good operation stability and good effect compared with the prior art. The defect rate of wafers caused by improper cleaning is reduced, the overall production efficiency and product yield are improved, and a more efficient and reliable cleaning solution is provided for the semiconductor manufacturing industry. The residual amount of pollutants on the wafer surface is reduced to less than 50% of the original level, and in particular, the removal efficiency of metal ions and organic pollutants is increased by more than 30%. DETAILED DESCRIPTION

[0015] The technical solution of the invention is further specifically described below through embodiments.

[0016] Embodiment: A method for improving the cleaning capability of an AMAT-CMP machine comprises the following steps: The first step: using a silicon-based composite detergent, adding a chelating agent and a surfactant to the silicon-based composite detergent. The surfactant is a fatty alcohol polyoxyethylene ether nonionic surfactant, and the organic alcohol is selected from at least one of methanol, ethanol, propanol, butanol, pentanol, and hexanol. The chelating agent is at least one of polyphosphate, aminocarboxylic acid, 1,3-diketone, hydroxycarboxylic acid, and polyamine.

[0017] Silicon-based cleaning compound detergent can more effectively combine with metal ions and enhance the ability to dissolve organic matter. The concentration of silicon-based cleaning compound detergent is determined to be 0.75%, which can not only ensure cleaning efficiency but also avoid wafer damage caused by excessive cleaning. When cleaning with silicon-based cleaning compound detergent, turn on ultrasound, and the ultrasonic frequency is 33~45KHZ.

[0018] Step 2: Adjust the DHF concentration to 0.35% and appropriately increase the cleaning temperature to 35°C to enhance its etching rate for oxides while maintaining low damage to the wafer. DHF is mainly used to remove the oxide layer and some metal contaminants on the surface of the wafer.

[0019] Step 3: By fine-tuning the ratio of ammonia to hydrogen peroxide in SC1 and controlling the temperature at 50°C, SC1 cleaning fluid is mainly used to remove particles and organic matter. It effectively improves its removal efficiency of pollutants and reduces the problem of increased wafer surface roughness caused by high temperature.

[0020] Step 4: After the cleaning agent has taken effect, use DIW to thoroughly rinse the wafer surface to ensure that there is no residue.

[0021] By increasing the DIW rinsing time by at least 30 seconds and using high-pressure spray technology, we ensure that each wafer surface can be fully rinsed, effectively removing all residual cleaning agents and contaminants, and ensuring the high cleanliness of the wafer surface.

[0022] In summary, the method for improving the cleaning capacity of the AMAT-CMP machine has the advantages of convenient operation, good operation stability and good effect. It reduces the defect rate of wafers caused by improper cleaning, improves the overall production efficiency and product yield, and provides a more efficient and reliable cleaning solution for the semiconductor manufacturing industry. The residual contaminants on the wafer surface are reduced to less than 50% of the original level, especially the removal efficiency of metal ions and organic contaminants is increased by more than 30%.

[0023] The above description is only a specific embodiment of the present invention, but the structural features of the present invention are not limited thereto. Any changes or modifications made by any technician in the field of the present invention are included in the patent scope of the present invention.

Claims

1. A method for improving the cleaning ability of an AMAT-CMP machine, characterized in that The steps are as follows: The first step: using a silicon-based cleaning compound detergent, adding a chelating agent and a surfactant to the silicon-based cleaning compound detergent; Step 2: The DHF concentration is adjusted to 0.2% to 0.5%, and the cleaning temperature is appropriately increased to 30°C to 40°C to enhance the etching rate of the oxide while maintaining low damage to the wafer; Step 3: Fine-tune the ratio of ammonia to hydrogen peroxide in SC1 and control the temperature between 45°C and 55°C; Step 4: After the cleaning agent acts, use DIW to thoroughly rinse the wafer surface to ensure that there is no residue.

2. The method for improving the cleaning capability of an AMAT-CMP machine according to claim 1, characterized in that: Silicon-based composite cleaning agents can combine with metal ions more effectively and enhance the ability to dissolve organic matter. The concentration of silicon-based composite cleaning agents is determined to be 0.5% to 1.0%, which can not only ensure cleaning efficiency but also avoid wafer damage caused by excessive cleaning.

3. The method for improving the cleaning capability of an AMAT-CMP machine according to claim 2, characterized in that: When cleaning with a silicone-based composite detergent, turn on ultrasound and the ultrasonic frequency is 33 to 45 KHZ.

4. The method for improving the cleaning capability of an AMAT-CMP machine according to claim 1, characterized in that: By increasing the DIW rinsing time by at least 30 seconds and using high-pressure spray technology, we ensure that each wafer surface can be fully rinsed, effectively removing all residual cleaning agents and contaminants, and ensuring the high cleanliness of the wafer surface.

5. The method for improving the cleaning capability of an AMAT-CMP machine according to claim 1, characterized in that: The surfactant is a fatty alcohol polyoxyethylene ether nonionic surfactant, and the organic alcohol is selected from at least one of methanol, ethanol, propanol, butanol, pentanol and hexanol.

6. The method for improving the cleaning capability of an AMAT-CMP machine according to claim 1, characterized in that: The chelating agent is at least one of polyphosphate, aminocarboxylic acid, 1,3-diketone, hydroxycarboxylic acid and polyamine.