Packaging structure for realizing self-destruction of passive silicon-based device based on hydrolytic ceramics

Abstract

The invention belongs to the technical field of semiconductors, and discloses a packaging structure for realizing self-destruction of a passive silicon-based device based on hydrolytic ceramics, which comprises a shell, a base and a self-destruction component, the bottom of the shell is fixedly connected with the base, a first cavity used for packaging the silicon-based device is formed between the shell and the base, the top of the shell is provided with an installation groove used for containing the self-destruction assembly, and the installation groove is located above the first cavity and communicated with the first cavity; the self-destruction assembly comprises a low-hydrolysis ceramic cover plate, a high-hydrolysis ceramic cover plate A and a corrosive agent for destroying the silicon-based device; the low-hydrolysis ceramic cover plate is fixedly connected with the top of the mounting groove; the high-hydrolysis ceramic cover plate A is fixedly connected with the inner side of the mounting groove or the bottom of the low-hydrolysis ceramic cover plate; a chamber for accommodating a corrosive agent is formed between the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A; the thickness hydrolysis rate of the low-hydrolysis ceramic cover plate is smaller than that of the high-hydrolysis ceramic cover plate A. The silicon-based device packaged in the device can be destroyed without power supply, and the device has wide applicability.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, relates to information security and special packaging materials for semiconductor devices, relates to a special ceramic packaging structure for packaging silicon-based micro devices such as chips and micro-electromechanical devices, and particularly to a packaging structure based on hydrolyzable ceramics for realizing self-destruction of passive silicon-based devices. Background Art

[0002] Various chips based on silicon-based semiconductor materials (i.e. silicon-based devices, such as Flash memory chips, DRAM memory chips, etc.) and micro-electromechanical devices (MEMS) are the hardware foundation that supports the rapid development of the entire information technology and industry. Such semiconductor devices are widely used in information acquisition, analysis, storage, transmission and other links, and inevitably involve the storage and encryption of a large amount of sensitive information. Once an information terminal device that integrates such functional chips is lost or stolen, it is possible that important information or technology in the chip will be stolen and leaked. Therefore, during product planning and design, self-destruction functions are often added to such important core components to ensure that they can be quickly destroyed in an emergency to protect information from being leaked.

[0003] At present, the self-destruction components of silicon-based devices mostly adopt active designs, such as strong pulse current impact method, secondary excitation explosion reaction, etc., but these self-destruction components cannot be separated from power supply. As for some passive devices without power supply, or non-recyclable devices that need to work until the power is exhausted, there are currently no targeted self-destruction components.

[0004] Therefore, designing a passive silicon-based device self-destruction component is a technical problem that needs to be solved urgently. Summary of the invention

[0005] The purpose of the present invention is to solve the above technical problems and provide a packaging structure based on hydrolyzable ceramics to achieve self-destruction of passive silicon-based devices, which can destroy the silicon-based devices packaged in the shell when there is no power supply.

[0006] The technical solution adopted by the present invention is: a packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics, comprising a shell, a base and a self-destruction component;

[0007] The bottom of the shell is fixedly connected to the base, and a first chamber for encapsulating silicon-based devices is formed therebetween. A mounting groove for accommodating a self-destruct component is provided on the top of the shell, and the mounting groove is located above the first chamber, and the mounting groove is communicated with the first chamber. The self-destruct component includes a low-hydrolysis ceramic cover plate, a high-hydrolysis ceramic cover plate A, and an etchant for destroying silicon-based devices. The low-hydrolysis ceramic cover plate is fixedly connected to the top of the mounting groove. The high-hydrolysis ceramic cover plate A is fixedly connected to the inner side of the mounting groove or the bottom of the low-hydrolysis ceramic cover plate. A second chamber for accommodating the etchant is formed between the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A. The thickness hydrolysis rate of the low-hydrolysis ceramic cover plate is less than the thickness hydrolysis rate of the high-hydrolysis ceramic cover plate A.

[0008] In one achievable manner, the thickness hydrolysis rate of the low-hydrolysis ceramic cover plate is less than 1 mm / d, preferably 0.1-1 mm / d; the thickness hydrolysis rate of the high-hydrolysis ceramic cover plate is 4-10 mm / h.

[0009] Furthermore, the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A are both borosilicate ceramics, and the chemical formula thereof is aB 2 O 3 bSiO 2 ·cAl 2 O 3 ·dXO, where a, b, c, d are mass percentages, a+b+c+d=1; XO is a metal oxide, and X is Ba, Ca or Mg;

[0010] For low hydrolysis ceramic cover plates, 10%≤a≤15%, 40%≤b≤50%, 30%≤c≤40%, 5%≤d≤10%;

[0011] For the highly hydrolyzed ceramic cover plate A, 30%≤a≤50%, 20%≤b≤35%, 20%≤c≤30%, and 0%≤d≤5%.

[0012] In one possible implementation, the etchant is preferably a strong alkaline solid etchant; preferably one of NaOH, KOH, etc.; since the corrosion rate of KOH solution is about 1 μm / min, the chip functional layer can be completely destroyed in a few minutes, so more preferably, the etchant is KOH. The cross-sectional view of the silicon wafer array after being etched by a 20% KOH solution at 40°C for 10 minutes is as follows Figure 1 As shown in the figure, it can be seen that the surface of the silicon wafer has been corroded, and the corrosion depth is about 3.5 microns, which basically leads to the failure of the silicon-based device function.

[0013] In one possible implementation, the self-destruct component further includes a heat generating agent; the heat generating agent and the corrosive agent are placed in a stacked manner or in a horizontal manner, and the specific configuration is as follows:

[0014] When the heating agent and the corrosive agent are placed in a stacked manner, the self-destruct component further includes a high-hydrolysis ceramic cover plate B; the high-hydrolysis ceramic cover plate B has the same components as the high-hydrolysis ceramic cover plate A; the high-hydrolysis ceramic cover plate B is arranged below the high-hydrolysis ceramic cover plate A and is fixedly connected to the inner side of the mounting groove; the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A form a third chamber for accommodating the heating agent; a second chamber for accommodating the corrosive agent is formed between the high-hydrolysis ceramic cover plate A and the high-hydrolysis ceramic cover plate B;

[0015] More specifically, a step groove for placing the low-hydrolysis ceramic cover plate, the high-hydrolysis ceramic cover plate A, and the high-hydrolysis ceramic cover plate B is provided on the inner side of the installation groove. The low-hydrolysis ceramic cover plate, the high-hydrolysis ceramic cover plate A, and the high-hydrolysis ceramic cover plate B are fixedly connected to the corresponding step grooves by sealant, and the top surface of the low-hydrolysis ceramic cover plate is flush with the top surface of the shell.

[0016] When the heating agent and the corrosive agent are placed horizontally, the high-hydrolysis ceramic cover plate A forms an upwardly protruding partition; the partition divides the chamber formed by the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A into two independent third chambers for accommodating the heating agent and the second chamber for accommodating the corrosive agent.

[0017] More specifically, a groove is provided at the bottom of the low-hydrolysis ceramic cover plate; the outer edge of the high-hydrolysis ceramic cover plate A is fixedly connected to the inner side of the groove of the low-hydrolysis ceramic cover plate by sealant, and is placed as a whole on the step groove provided on the inner side of the mounting groove, and is further fixed by sealant, so that the top surface of the low-hydrolysis ceramic cover plate is flush with the top surface of the shell.

[0018] The exothermic agent is used to release heat, which can accelerate the corrosion rate of the highly hydrolyzed ceramic cover plate and the corrosion rate of the silicon-based device by the corrosive agent. The present invention uses a solid exothermic agent, preferably CaO or nano aluminum powder.

[0019] Furthermore, the heating agent and the corrosive agent are both block structures, which are obtained by pressing and molding corresponding raw materials.

[0020] In one achievable manner, the steps for preparing the low-hydrolysis ceramic cover plate are as follows:

[0021] (1) According to the chemical composition of the low-hydrolyzed ceramic cover plate, weigh the raw materials kaolin, the X-containing compound and boric acid;

[0022] (2) crushing kaolin and the compound containing X, and ball-milling them into slurry using deionized water in a ball mill;

[0023] (3) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 300-400° C. for 3-6 hours to prepare ceramic pre-sintered powder;

[0024] (4) adding boric acid and deionized water to the ceramic pre-calcined powder, and ball-milling the powder again into a slurry;

[0025] (5) casting the slurry into a sheet, and pressing it into a preset structure to obtain a preformed low-hydrolysis ceramic cover plate;

[0026] (6) The preformed low-hydrolysis ceramic cover plate is sintered at 500-600° C. for 1-2 hours, and then the temperature is raised to 950-1050° C. and sintered for 2-3 hours to obtain a final low-hydrolysis ceramic cover plate.

[0027] In one achievable manner, the preparation steps of the highly hydrolyzable ceramic cover plate A or the highly hydrolyzable ceramic cover plate B are as follows:

[0028] (1′) According to the chemical composition of the highly hydrolyzable ceramic cover plate A or the highly hydrolyzable ceramic cover plate B, weigh the raw materials kaolin, the compound containing X and boric acid;

[0029] (2′) crushing kaolin and a compound containing X, and ball-milling them into a slurry using deionized water in a ball mill;

[0030] (3′) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 300-400° C. for 3-6 hours to prepare a ceramic pre-sintered powder;

[0031] (4′) adding boric acid and deionized water to the ceramic pre-calcined powder, and ball-milling the powder into a slurry again;

[0032] (5′) casting the slurry into a sheet, and pressing it into a preset structure to obtain a preformed high-hydrolysis ceramic cover plate A or a high-hydrolysis ceramic cover plate B;

[0033] (6′) Sintering the preformed high-hydrolysis ceramic cover plate A or high-hydrolysis ceramic cover plate B at 500-600° C. for 1-2 hours, then heating to 850-950° C. and continuing sintering for 0.5-1 hour to obtain the final high-hydrolysis ceramic cover plate A or high-hydrolysis ceramic cover plate B.

[0034] The above-mentioned compound containing X is an oxide, a salt or a hydroxide thereof.

[0035] The solid content of the slurry in the above step (2) or (2') is 20%-25%.

[0036] The solid content of the slurry in the above step (4) or (4') is 30%-50%.

[0037] The self-destruction mechanism of the silicon-based device in the present invention is: chemical wet corrosion of the silicon wafer by a strong alkaline solution. The low-hydrolysis ceramic cover plate is first hydrolyzed and collapsed, and then the high-hydrolysis ceramic cover plate is hydrolyzed and collapsed. The corrosive agent sealed on the high-hydrolysis ceramic cover plate reacts rapidly with water. The heat released by the added exothermic agent can accelerate the rate at which the corrosive agent corrodes the silicon-based device, and can also accelerate the corrosion rate of the high-hydrolysis ceramic cover plate, so that the high-temperature and high-concentration corrosive solution quickly corrodes the functional layer of the silicon-based device and causes it to lose its function, thereby realizing the self-destruction of the silicon-based device.

[0038] Compared with the prior art, the present invention has the following beneficial effects:

[0039] 1) The present invention uses low-hydrolysis ceramics and high-hydrolysis ceramics and corrosive agents to construct a self-destruction component, and only uses the most easily available resources in nature such as light and water to achieve the destruction of silicon-based devices. Compared with the strong pulse current impact method and various circuits required for secondary excitation explosion reactions in the prior art, the self-destruction component in the present invention does not require power supply to destroy the encapsulated silicon-based devices, and the size of the encapsulation structure can be designed according to the size of the silicon-based device. The structure is simple and has wide applicability;

[0040] 2) The self-destruct component provided in the present invention also includes a heat-generating agent. The heat released by the heat-generating agent accelerates the corrosion rate of the corrosive agent, thereby achieving rapid corrosion; it can also accelerate the corrosion rate of the highly hydrolyzed ceramic cover plate. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 This is a cross-sectional view of a silicon wafer array after being corroded by a 20% KOH solution at 40°C for 10 minutes;

[0042] Figure 2 The following are comparison diagrams of the highly hydrolyzed ceramic sample with a thickness of 3 mm obtained in Example 3 before and during hydrolysis, wherein (a) is the highly hydrolyzed ceramic sample before hydrolysis, and (b) is the highly hydrolyzed ceramic sample during hydrolysis;

[0043] Figure 3 It is a schematic diagram of the structure of the packaging structure for realizing the self-destruction of passive silicon-based devices based on water-degradable ceramics in Example 7;

[0044] In the figure, 1. shell; 11. first chamber; 12a. mounting groove; 121a. second chamber; 122a. third chamber; 2. silicon-based device; 3. low-hydrolysis ceramic cover plate; 4a. high-hydrolysis ceramic cover plate A; 4b. high-hydrolysis ceramic cover plate B; 5. heating agent; 6. corrosive agent; 7. base.

[0045] Figure 4 It is a schematic diagram of the structure of the packaging structure for realizing self-destruction of passive silicon-based devices based on water-degradable ceramics in Example 8;

[0046] In the figure, 1, shell; 11, first chamber; 12b, mounting groove; 121b, second chamber; 122b, third chamber; 2, silicon-based device; 3, low-hydrolysis ceramic cover plate; 4c, high-hydrolysis ceramic cover plate A; 41, partition; 5, heating agent; 6, corrosive agent; 7, base. DETAILED DESCRIPTION

[0047] The following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work belong to the present invention.

[0048] Example 1

[0049] This embodiment provides a method for preparing low-hydrolysis ceramics, comprising the following steps:

[0050] (1) According to the chemical composition of low hydrolysis ceramics aB 2 O 3 bSiO 2 ·cAl 2 O 3 ·dCaO, according to the ratio of a = 15%, b = 40.6%, c = 34.4%, d = 10%, weigh the raw material kaolin (Al 2 O 3 ·2SiO 2 ·2H 2 O), slaked lime (Ca(OH) 2 ) and boric acid (H 3 BO 3 );

[0051] (2) crushing kaolin and slaked lime, and grinding them into slurry with deionized water in a ball mill; the solid content of the slurry is 20%;

[0052] (3) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 400° C. for 3 hours to prepare ceramic pre-sintered powder;

[0053] (4) adding boric acid and deionized water to the ceramic pre-sintered powder, and ball-milling the powder again to form a slurry; the solid content of the slurry is 20%;

[0054] (5) drying the slurry to remove excess water and pressing the slurry to obtain low-hydrolysis ceramics;

[0055] (6) The low-hydrolysis ceramic is sintered at 600° C. for 1 hour, then heated to 1050° C. and sintered for another 2 hours, and then cooled to room temperature in the furnace to obtain a final low-hydrolysis ceramic product.

[0056] Example 2

[0057] This embodiment provides a method for preparing low-hydrolysis ceramics, comprising the following steps:

[0058] (1) According to the chemical composition of low hydrolysis ceramics aB 2 O 3 bSiO 2 ·cAl 2 O 3 ·dMgO, weigh the raw material kaolin (Al 2 O 3 ·2SiO 2 ·2H 2 O), magnesium oxide (MgO) and boric acid (H 3 BO 3 );

[0059] (2) crushing kaolin and magnesium oxide, and ball-milling them into slurry with deionized water in a ball mill; the solid content of the slurry is 25%;

[0060] (3) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 300° C. for 6 hours to prepare ceramic pre-sintered powder;

[0061] (4) adding boric acid and deionized water to the ceramic pre-sintered powder, and ball-milling the powder again to form a slurry; the solid content of the slurry is 25%;

[0062] (5) drying the slurry to remove excess water, and pressing and molding to obtain a low-hydrolysis ceramic sample;

[0063] (6) The preformed low-hydrolysis ceramic product is sintered at 500°C for 2 hours, then heated to 950°C and sintered for another 3 hours, and then cooled to room temperature in the furnace to obtain the final low-hydrolysis ceramic.

[0064] Example 3

[0065] This embodiment provides a method for preparing a highly hydrolyzed ceramic, comprising the following steps:

[0066] (1) According to the chemical composition of highly hydrolyzed ceramics aB 2 O 3 bSiO 2 ·cAl 2 O 3 ·dBaO, weigh the raw material kaolin (Al 2 O 3 ·2SiO 2 ·2H 2 O), barium oxide (BaO) and boric acid (H3 BO 3 );

[0067] (2) crushing kaolin and barium oxide, and grinding them into slurry with deionized water in a ball mill; the solid content of the slurry is 20%;

[0068] (3) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 400° C. for 3 hours to prepare ceramic pre-sintered powder;

[0069] (4) adding boric acid and deionized water to the ceramic pre-sintered powder, and ball-milling the powder again to form a slurry; the solid content of the slurry is 20%;

[0070] (5) drying the slurry to remove excess water and pressing the slurry to obtain highly hydrolyzed ceramics;

[0071] (6) The highly hydrolyzed ceramic is sintered at 600° C. for 1 hour, then heated to 950° C. and sintered for another 0.5 hour, and then cooled to room temperature in the furnace to obtain a final highly hydrolyzed ceramic product.

[0072] like Figure 2 As shown, it is a comparison diagram of the highly hydrolyzed ceramic sample with a thickness of 3 mm prepared in this embodiment before and during hydrolysis; Figure 2 (a) is a highly hydrolyzed ceramic sample before being hydrolyzed. Figure 2 (b) is a highly hydrolyzed ceramic sample in hydrolysis. As can be seen from the figure, the highly hydrolyzed ceramic sample is destroyed by hydrolysis in water.

[0073] Example 4

[0074] This embodiment provides a method for preparing a highly hydrolyzed ceramic, comprising the following steps:

[0075] (1) According to the chemical composition of highly hydrolyzed ceramics aB 2 O 3 bSiO 2 ·cAl 2 O 3 According to the ratio of a = 50%, b = 27%, c = 23%, weigh the raw material kaolin (Al 2 O 3 ·2SiO 2 ·2H 2 O) and boric acid (H 3 BO 3 );

[0076] (2) crushing kaolin and grinding it into slurry with deionized water in a ball mill; the solid content of the slurry is 25%;

[0077] (3) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 300° C. for 4 hours to prepare ceramic pre-sintered powder;

[0078] (4) adding boric acid and deionized water to the ceramic pre-sintered powder, and ball-milling the powder again to form a slurry; the solid content of the slurry is 25%;

[0079] (5) drying the slurry to remove excess water and pressing the slurry to obtain highly hydrolyzed ceramics;

[0080] (6) The highly hydrolyzed ceramic is sintered at 500° C. for 1 hour, then heated to 850° C. and sintered for another hour, and then cooled to room temperature in the furnace to obtain a final highly hydrolyzed ceramic product.

[0081] According to research, the thickness hydrolysis rate of low-hydrolysis ceramics is about 0.1-1mm / d; the thickness hydrolysis rate of high-hydrolysis ceramic cover plates is about 4-10mm / h.

[0082] Example 5

[0083] This embodiment provides a method for preparing a low-hydrolysis ceramic cover plate, comprising the following steps:

[0084] (1) According to the chemical composition of low hydrolysis ceramics aB 2 O 3 bSiO 2 ·cAl 2 O 3 ·dCaO, according to the ratio of a = 15%, b = 40.6%, c = 34.4%, d = 10%, weigh the raw material kaolin (Al 2 O 3 ·2SiO 2 ·2H 2 O), slaked lime (Ca(OH) 2 ) and boric acid (H 3 BO 3 );

[0085] (2) crushing kaolin and slaked lime, and grinding them into slurry with deionized water in a ball mill; the solid content of the slurry is 20%;

[0086] (3) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 400° C. for 3 hours to prepare ceramic pre-sintered powder;

[0087] (4) adding boric acid and deionized water to the ceramic pre-sintered powder, and ball-milling the powder again to form a slurry; the solid content of the slurry is 40%;

[0088] (5) casting the slurry into a sheet, and pressing a preset structure to obtain a preformed low-hydrolysis ceramic cover plate;

[0089] (6) The preformed low-hydrolysis ceramic cover plate is sintered at 600°C for 1 hour, then heated to 1050°C and sintered for 2 hours, and then cooled to room temperature to obtain the final low-hydrolysis ceramic cover plate.

[0090] Example 6

[0091] This embodiment provides a method for preparing a highly hydrolyzed ceramic cover plate, comprising the following steps:

[0092] (1′) According to the chemical composition of highly hydrolyzed ceramics aB 2 O 3 bSiO 2 ·cAl 2 O 3 ·dBaO, weigh the raw material kaolin (Al 2 O 3 ·2SiO 2 ·2H 2 O), barium oxide (BaO) and boric acid (H 3 BO 3 );

[0093] (2′) crushing kaolin and barium oxide, and grinding them into slurry with deionized water in a ball mill; the solid content of the slurry is 20%;

[0094] (3′) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 400° C. for 3 hours to prepare a ceramic pre-sintered powder;

[0095] (4′) adding boric acid and deionized water to the ceramic pre-sintered powder, and ball-milling the powder again to form a slurry; the solid content of the slurry is 40%;

[0096] (5′) casting the slurry into a sheet, and pressing it into a preset structure to obtain a preformed high-hydrolysis ceramic cover plate;

[0097] (6′) The highly hydrolyzed ceramic cover plate is sintered at 600° C. for 1 hour, then heated to 950° C. and sintered for 0.5 hour, and then cooled to room temperature to obtain the final highly hydrolyzed ceramic cover plate.

[0098] Example 7

[0099] This embodiment provides a packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics, such as Figure 3As shown, it includes a shell 1, a base 7 and a self-destruction component; the bottom of the shell 1 is fixedly connected to the base 7, and a first chamber 11 for encapsulating the silicon-based device 2 is formed therebetween, and a mounting groove 12a for accommodating the self-destruction component is provided on the top of the shell 1, the mounting groove 12a is located above the first chamber 11, and the mounting groove 12a is communicated with the first chamber 11. The self-destruction component includes a low-hydrolysis ceramic cover plate 3, a high-hydrolysis ceramic cover plate A 4a, a high-hydrolysis ceramic cover plate B 4b, a heating agent 5 and an etchant 6.

[0100] The inner side of the mounting groove 12 is provided with step grooves from top to bottom for placing the low-hydrolysis ceramic cover plate 3, the high-hydrolysis ceramic cover plate A 4a, and the high-hydrolysis ceramic cover plate B 4b in sequence. The low-hydrolysis ceramic cover plate 3, the high-hydrolysis ceramic cover plate A 4a, and the high-hydrolysis ceramic cover plate B4b are fixedly connected to the corresponding step grooves by sealant; the top surface of the low-hydrolysis ceramic cover plate 3 is flush with the top surface of the shell 1.

[0101] The low-hydrolysis ceramic cover plate 3 and the high-hydrolysis ceramic cover plate A 4a form a third chamber 122a for accommodating the heating agent 5; the second chamber 121a for accommodating the corrosive agent 6 is formed between the high-hydrolysis ceramic cover plate A 4a and the high-hydrolysis ceramic cover plate B 4b.

[0102] The low hydrolyzable ceramic cover plate 3 is prepared according to the method provided in Example 5. The high hydrolyzable ceramic cover plate A 4a and the high hydrolyzable ceramic cover plate B 4b have the same components and are both prepared according to the method provided in Example 6.

[0103] The exothermic agent 5 is in a block structure and is formed by pressing CaO; the exothermic agent can accelerate the corrosion rate of the etchant 6 on the silicon-based device 2, and can also accelerate the corrosion rate of the highly hydrolyzed ceramic cover plate A and the highly hydrolyzed ceramic cover plate B. The etchant 6 is in a block structure and is formed by pressing KOH, and is used to destroy the silicon-based device 2.

[0104] The silicon-based device 2 is fixed on the base 7 by welding through a conventional semiconductor process.

[0105] Example 8

[0106] This embodiment provides a packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics, such as Figure 4 As shown, it includes a shell 1, a base 7 and a self-destruction component; the bottom of the shell 1 is fixedly connected to the base 7, and a first chamber 11 for encapsulating the silicon-based device 2 is formed therebetween, and a mounting groove 12b for accommodating the self-destruction component is provided on the top of the shell 1, the mounting groove 12b is located above the first chamber 11, and the mounting groove 12b is communicated with the first chamber 11. The self-destruction component includes a low-hydrolysis ceramic cover plate 3, a high-hydrolysis ceramic cover plate A 4c, a heating agent 5 and an etchant 6.

[0107] The low-hydrolysis ceramic cover plate 3 is fixedly connected to the step groove set at the top of the installation groove 12b by sealant, and the top surface of the low-hydrolysis ceramic cover plate 3 is flush with the top surface of the shell 1. A groove is provided at the bottom of the low-hydrolysis ceramic cover plate 3. The outer edge of the high-hydrolysis ceramic cover plate A 4c is fixedly connected to the inner side of the groove of the low-hydrolysis ceramic cover plate by sealant. The high-hydrolysis ceramic cover plate A 4c is formed with an upwardly protruding partition 41; the partition 41 divides the chamber formed by the low-hydrolysis ceramic cover plate 3 and the high-hydrolysis ceramic cover plate A 4c into two independent third chambers 122b for accommodating the heating agent 5 and the second chamber 121b for accommodating the corrosive agent 6.

[0108] The low hydrolysis ceramic cover plate 3 was prepared according to the method provided in Example 5. The high hydrolysis ceramic cover plate A 4c was prepared according to the method provided in Example 6.

[0109] The heat-generating agent 5 is in a block structure and is formed by pressing nano-aluminum powder; the heat-generating agent can accelerate the corrosion rate of the silicon-based device 2 by the corrosive agent 6, and can also accelerate the corrosion rate of the highly hydrolyzed ceramic cover plate. The corrosive agent 6 is in a block structure and is formed by pressing KOH, and is used to destroy the silicon-based device 2.

[0110] The silicon-based device 2 is fixed on the base 7 by welding through a conventional semiconductor process.

[0111] Those skilled in the art will appreciate that the embodiments described herein are intended to help readers understand the principles of the present invention, and should be understood that the protection scope of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific variations and combinations that do not deviate from the essence of the present invention based on the technical revelations disclosed by the present invention, and these variations and combinations are still within the protection scope of the present invention.

Claims

1. A packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics, characterized in that: Includes a shell, a base and a self-destruct component; The bottom of the shell is fixedly connected to the base, and a first chamber for encapsulating silicon-based devices is formed therebetween. A mounting groove for accommodating a self-destruct component is provided on the top of the shell, and the mounting groove is located above the first chamber, and the mounting groove is communicated with the first chamber. The self-destruct component includes a low-hydrolysis ceramic cover plate, a high-hydrolysis ceramic cover plate A, and an etchant for destroying silicon-based devices. The low-hydrolysis ceramic cover plate is fixedly connected to the top of the mounting groove. The high-hydrolysis ceramic cover plate A is fixedly connected to the inner side of the mounting groove or the bottom of the low-hydrolysis ceramic cover plate. A second chamber for accommodating the etchant is formed between the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A. The thickness hydrolysis rate of the low-hydrolysis ceramic cover plate is less than the thickness hydrolysis rate of the high-hydrolysis ceramic cover plate A.

2. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 1, characterized in that: The thickness hydrolysis rate of the low-hydrolysis ceramic cover plate is less than 1 mm / d, and the thickness hydrolysis rate of the high-hydrolysis ceramic cover plate is 4-10 mm / h.

3. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 2, characterized in that: The low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A are both borosilicate ceramics, and their chemical formula is aB2O3·bSiO2·cAl2O3·dXO, wherein a, b, c, d are mass percentages, a+b+c+d=1; XO is a metal oxide, and X is Ba, Ca or Mg; For low hydrolysis ceramic cover plates, 10%≤a≤15%, 40%≤b≤50%, 30%≤c≤40%, 5%≤d≤10%; For the highly hydrolyzed ceramic cover plate A, 30%≤a≤50%, 20%≤b≤35%, 20%≤c≤30%, and 0%≤d≤5%.

4. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 3, characterized in that: The etchant is NaOH or KOH.

5. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to any one of claims 1 to 4, characterized in that: The self-destruct component further includes a heating agent; the heating agent and the corrosive agent are placed in a stacked or horizontal manner, and the specific arrangement is as follows: When the heating agent and the corrosive agent are placed in a stacked manner, the self-destruct component further includes a high-hydrolysis ceramic cover plate B; the high-hydrolysis ceramic cover plate B has the same components as the high-hydrolysis ceramic cover plate A; the high-hydrolysis ceramic cover plate B is arranged below the high-hydrolysis ceramic cover plate A and is fixedly connected to the inner side of the mounting groove; the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A form a third chamber for accommodating the heating agent; a second chamber for accommodating the corrosive agent is formed between the high-hydrolysis ceramic cover plate A and the high-hydrolysis ceramic cover plate B; When the heating agent and the corrosive agent are placed horizontally, the high-hydrolysis ceramic cover plate A forms an upwardly protruding partition; the partition divides the chamber formed by the low-hydrolysis ceramic cover plate and the high-hydrolysis ceramic cover plate A into two independent third chambers for accommodating the heating agent and the second chamber for accommodating the corrosive agent.

6. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 5, characterized in that: When the heating agent and the corrosive agent are placed in a stacked manner, a step groove for placing the low-hydrolysis ceramic cover plate, the high-hydrolysis ceramic cover plate A, and the high-hydrolysis ceramic cover plate B is provided on the inner side of the installation groove.

7. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 5, characterized in that: When the heating agent and the corrosive agent are placed horizontally, a groove is opened at the bottom of the low-hydrolysis ceramic cover plate; the outer edge of the high-hydrolysis ceramic cover plate A is fixedly connected to the inner side of the groove of the low-hydrolysis ceramic cover plate through sealant, and is placed as a whole on the step groove opened on the inner side of the installation groove.

8. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 5, characterized in that: The exothermic agent is CaO or nano aluminum powder.

9. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 5, characterized in that: The preparation steps of the low-hydrolysis ceramic cover plate are as follows: (1) According to the chemical composition of the low-hydrolyzed ceramic cover plate, weigh the raw materials kaolin, the X-containing compound and boric acid; (2) crushing kaolin and the compound containing X, and ball-milling them into slurry using deionized water in a ball mill; (3) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 300-400° C. for 3-6 hours to prepare ceramic pre-sintered powder; (4) adding boric acid and deionized water to the ceramic pre-calcined powder, and ball-milling the powder again into a slurry; (5) casting the slurry into a sheet, and pressing it into a preset structure to obtain a preformed low-hydrolysis ceramic cover plate; (6) The preformed low-hydrolysis ceramic cover plate is sintered at 500-600° C. for 1-2 hours, and then the temperature is raised to 950-1050° C. and sintered for 2-3 hours to obtain a final low-hydrolysis ceramic cover plate.

10. The packaging structure for realizing self-destruction of passive silicon-based devices based on hydrolyzable ceramics according to claim 5, characterized in that: The preparation steps of the highly hydrolyzable ceramic cover plate A or the highly hydrolyzable ceramic cover plate B are as follows: (1′) According to the chemical composition of the highly hydrolyzable ceramic cover plate A or the highly hydrolyzable ceramic cover plate B, weigh the raw materials kaolin, the compound containing X and boric acid; (2′) crushing kaolin and a compound containing X, and ball-milling them into a slurry using deionized water in a ball mill; (3′) drying the slurry, crushing and grinding it into powder, and pre-sintering it at 300-400° C. for 3-6 hours to prepare a ceramic pre-sintered powder; (4′) adding boric acid and deionized water to the ceramic pre-calcined powder, and ball-milling the powder into a slurry again; (5′) casting the slurry into a sheet, and pressing it into a preset structure to obtain a preformed high-hydrolysis ceramic cover plate A or a high-hydrolysis ceramic cover plate B; (6′) Sintering the preformed high-hydrolysis ceramic cover plate A or high-hydrolysis ceramic cover plate B at 500-600° C. for 1-2 hours, then heating to 850-950° C. and continuing sintering for 0.5-1 hour to obtain the final high-hydrolysis ceramic cover plate A or high-hydrolysis ceramic cover plate B.

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