AMB substrate embedded PCB packaging integrated power module and manufacturing method

Abstract

The invention discloses an AMB substrate embedded PCB packaging integrated power module and a manufacturing method thereof, and the method comprises the steps: a power chip is mounted on an AMB substrate, a first insulating dielectric layer, a first metal layer, a second insulating dielectric layer and a second insulating metal layer are sequentially pressed on the power chip and the AMB substrate from bottom to top, and the first metal layer and the second metal layer are provided with current paths through etching; a metal conduction hole for connecting the first metal layer with the AMB substrate and the power chip is formed in the first insulating dielectric layer; and a metal conduction hole for connecting the first metal layer with the second metal layer is formed in the second insulating metal layer. According to the AMB embedded PCB power module, the integration level of an electric drive assembly is improved, meanwhile, circuit paths are reduced through PCB lamination and metal conduction hole modes, stray inductance and thermal resistance are reduced, and the AMB embedded PCB power module has the advantages of being high in power density, short in current path, small in stray inductance, low in thermal resistance and the like.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to an AMB substrate embedded in a PCB package integrated power module and a manufacturing method thereof. Background Art

[0002] As the core component of the inverter, the circuit topology, parasitic parameters and heat dissipation capacity of the power module directly affect the performance of the vehicle. By optimizing and improving the packaging solution of the power module, the acceleration and endurance of the vehicle can be directly affected.

[0003] Currently, the power modules used in the main drive inverters of new energy vehicles are limited by the packaging method, and there is much room for improvement in performance parameters such as inductance and thermal resistance. In addition, there will be higher requirements for the integration of electric drive assemblies in the future. Summary of the invention

[0004] The purpose of the present invention is to overcome the deficiencies in the prior art and provide an AMB substrate embedded in a PCB package integrated power module and a manufacturing method to solve the problem that the power module is limited by the packaging method and performance parameters such as inductance and thermal resistance are difficult to improve.

[0005] To solve the above technical problems, the present invention is implemented by adopting the following solutions: The present invention provides an AMB substrate embedded in a PCB package integrated power module, comprising an AMB substrate, a power chip, a first metal layer, a second metal layer, a first insulating medium layer and a second insulating medium layer; the power chip is mounted on the AMB substrate, and the first insulating medium layer, the first metal layer, the second insulating medium layer and the second insulating metal layer are pressed together on the power chip and the AMB substrate from bottom to top in sequence, current paths are etched on the first metal layer and the second metal layer, a metal via hole connecting the first metal layer with the AMB substrate and the power chip is provided in the first insulating medium layer, and a metal via hole connecting the first metal layer and the second metal layer is provided in the second insulating metal layer.

[0006] Optionally, a solder-proof insulating layer is further included, and the solder-proof insulating layer is covered on the second metal layer.

[0007] Optionally, a heat sink is also included, the power chip is mounted on the copper clad layer on the upper surface of the AMB substrate, and the heat sink is connected to the copper clad layer on the lower surface of the AMB substrate.

[0008] Optionally, the copper coating thickness on the lower surface of the AMB substrate is greater than the copper coating thickness on the upper surface thereof.

[0009] Optionally, an insulating thermally conductive material is also included, and the insulating thermally conductive material is coated or mounted between the AMB substrate and the heat sink.

[0010] Optionally, the first metal layer and the second metal layer are both made of copper.

[0011] The present invention also provides a method for manufacturing the aforementioned AMB substrate embedded in a PCB package integrated power module, comprising: Step a: Mount the power chip on the AMB substrate; Step b: combining the third metal layer, the fourth metal layer and the third insulating medium layer between the third metal layer and the fourth metal layer into an embedded substrate, and opening an empty groove in the embedded substrate; Step c: placing the AMB substrate mounted with the power chip into the empty slot, sequentially stacking the first insulating dielectric layer and the first metal layer on the power chip, the AMB substrate and the embedded substrate, and pressing them together to connect the AMB substrate, the power chip, the embedded substrate, the first insulating dielectric layer and the first metal layer and fill the empty slot, and making a current path in the first metal layer; Step d: making metal vias in the first insulating dielectric layer to connect the first metal layer with the AMB substrate and the power chip, and the power chip electrode and the copper layer on the upper surface of the AMB substrate are connected to the current path of the first metal layer through the metal vias; Step e: sequentially stacking a second insulating medium layer and a second metal layer on the first metal layer and laminating them to connect the first metal layer, the second insulating medium layer and the second metal layer, and making a current path in the second metal layer; Step f: making a metal via hole connecting the first metal layer and the second metal layer in the second insulating dielectric layer, and the current path of the second metal layer is connected to the current path of the first metal layer through the metal via hole; Step g: cutting the AMB substrate, power chip, embedded substrate, first insulating medium layer, first metal layer, second insulating medium layer and second metal layer that are pressed together according to the size of the AMB substrate to obtain an AMB substrate embedded in a PCB package integrated power module.

[0012] Optionally, it also includes: Before step g, a solder resist insulating layer is formed on the second metal layer.

[0013] Optionally, it also includes: After step g, an insulating thermally conductive material is coated or mounted on the copper layer on the lower surface of the AMB, and the copper layer on the lower surface of the AMB coated or mounted with the insulating thermally conductive material is connected to a heat sink.

[0014] Optionally, the third metal layer and the fourth metal layer are both made of copper. Beneficial Effects

[0015] The AMB embedded in the PCB power module of the present invention improves the integration of the electric drive assembly while reducing the circuit path through PCB lamination and metal through-holes, reducing stray inductance and thermal resistance, and has the advantages of high power density, short current path, small stray inductance, low thermal resistance, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic diagram of the structure of an AMB substrate embedded in a PCB package integrated power module provided by Embodiment 1 of the present invention; Figure 2 It is a schematic diagram of step 1 in a method for manufacturing an AMB substrate embedded in a PCB packaged integrated power module provided in Embodiment 2 of the present invention; Figure 3 It is a schematic diagram of step 2 in a method for manufacturing an AMB substrate embedded in a PCB packaged integrated power module provided in Embodiment 2 of the present invention; Figure 4 It is a schematic diagram of step 3 in a method for manufacturing an AMB substrate embedded in a PCB packaged integrated power module provided in Embodiment 2 of the present invention; Figure 5 It is a schematic diagram of step 4 in a method for manufacturing an AMB substrate embedded in a PCB packaged integrated power module provided in Embodiment 2 of the present invention; Figure 6 It is a schematic diagram of step five in a method for manufacturing an AMB substrate embedded in a PCB packaged integrated power module provided in Embodiment 2 of the present invention; Figure 7 It is a schematic diagram of step six in a method for manufacturing an AMB substrate embedded in a PCB packaged integrated power module provided in Embodiment 2 of the present invention; Figure 8 It is a schematic diagram of step seven in a method for manufacturing an AMB substrate embedded in a PCB packaged integrated power module provided in Example 2 of the present invention. DETAILED DESCRIPTION

[0017] The present invention will be further described below in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and cannot be used to limit the protection scope of the present invention.

[0018] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0019] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention. Example 1

[0020] This embodiment provides an AMB substrate embedded in a PCB package integrated power module, such as Figure 1 As shown, it includes an AMB (Active Metal Brazing Ceramic Substrate) substrate, a power chip, a first metal layer, a second metal layer, a first insulating dielectric layer, and a second insulating dielectric layer. The copper thickness of the lower surface of the AMB substrate is greater than the copper thickness of the upper surface, which can offset the stress generated during the PCB manufacturing process to solve the PCB warping problem caused by the asymmetric packaging structure. The power chip is mounted on the copper layer on the upper surface of the AMB substrate, and the copper layer on the upper surface of the AMB substrate and the connected power chip electrode serve as an equipotential area. The first insulating dielectric layer, the first metal layer, the second insulating dielectric layer, and the second insulating metal layer are pressed from bottom to top on the power chip and the AMB substrate. The first metal layer and the second metal layer have different graphics and network designs. The current path is processed by etching or other processing methods. Different metal connection areas achieve different current paths. The insulating dielectric layer serves as the intermediate insulation and heat transfer path of the metal layer. The first insulating dielectric layer is provided with metal vias connecting the first metal layer with the AMB substrate and the power chip. The second insulating metal layer is provided with metal vias connecting the first metal layer with the second metal layer. The power chip electrodes and the copper layer on the upper surface of the AMB substrate are connected to each metal layer through the metal vias. The metal vias are connected to other logic circuit areas of the same package to form a complete power circuit and logic circuit to constitute a highly integrated electric drive system.

[0021] In addition, it also includes a solder-proof insulating layer, an insulating thermally conductive material and a heat sink. The solder-proof insulating layer is covered on the second metal layer. The heat sink is directly or indirectly connected to the copper cladding layer on the lower surface of the AMB as a heat conduction and fluid heat dissipation channel. When directly connected, the copper cladding layer on the lower surface of the AMB is directly welded to the heat sink. When indirectly connected, the insulating thermally conductive material is coated or mounted between the AMB substrate and the heat sink. The insulating thermally conductive material is heat dissipating silicone grease, and the insulating medium layer is made of a high-insulation and high-thermal-conductivity material. Example 2

[0022] This embodiment provides a method for manufacturing an integrated power module in which the AMB substrate is embedded in a PCB package as described in Embodiment 1, and the process is as follows: Step 1: If Figure 2 As shown, the power chip is mounted on the AMB substrate, and metal connection processes such as welding, sintering, and diffusion welding can be selected.

[0023] Step 2: If Figure 3 As shown, the upper and lower metal layers and the middle insulating dielectric layer form an embedded substrate, and a suitable size of the empty groove is marked in the middle of the embedded substrate.

[0024] Step 3: If Figure 4 As shown, the AMB substrate with the power chip mounted is placed in the empty slot of step 2, and then an insulating dielectric layer and a metal layer are stacked and pressed together as a whole. The pressing allows the insulating dielectric layer to melt-flow-solidify to connect all the above materials together and fill the empty slot, and a current path is etched on the stacked metal layer.

[0025] Step 4: If Figure 5 As shown, the pressed chip embedding layer is processed by laser, electroplating and other processes to make metal vias in the insulating dielectric layer that connect the upper and lower metal layers and the upper metal layer with the power chip. The power chip electrode and the copper layer on the upper surface of the AMB substrate are connected to the current path of the metal layer superimposed in step three through the metal vias.

[0026] Step 5: If Figure 6 As shown, in order to integrate the control circuit, after step four is completed, an insulating dielectric layer and a metal layer are superimposed and pressed together. Through laser, electroplating and other processes, metal vias connecting the upper and lower metal layers are made in the insulating dielectric layer, and a current path is etched on the superimposed metal layer. The current path of the metal layer superimposed in this step is connected to the current path of the metal layer superimposed in step three through the metal vias, so that the power chip electrode and the copper layer on the surface of the AMB substrate are connected to each metal layer through the metal vias, and the metal vias are connected to other logic circuit areas of the same package, forming a complete power circuit and logic circuit to constitute a highly integrated electric drive system, and then the surface solder resistance insulation is performed.

[0027] Step 6: If Figure 7 As shown, the AMB substrate is cut as a whole according to its size to form a single AMB substrate embedded in a PCB package to integrate the power module.

[0028] Step 7: If Figure 8 As shown, the AMB substrate is embedded in the lower surface of the PCB package integrated power module, that is, the copper layer on the lower surface of the AMB substrate is directly or indirectly connected to the heat sink for heat dissipation. When directly connected, the copper layer on the lower surface of the AMB is directly soldered to the heat sink. When indirectly connected, insulating thermal conductive material can be coated or mounted between the AMB substrate and the heat sink.

[0029] In addition, the material of the above metal layers is copper, and the above PCB lamination, laser, electroplating and other processes can also form an ultra-short current path.

[0030] In summary, the AMB embedded in the PCB power module of the present invention improves the integration of the electric drive assembly while reducing the circuit path through PCB lamination and metal through-holes, reducing stray inductance and thermal resistance, and has the advantages of high power density, short current path, small stray inductance, low thermal resistance, etc.

[0031] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. An AMB substrate embedded in a PCB package integrated power module, characterized in that: The invention comprises an AMB substrate, a power chip, a first metal layer, a second metal layer, a first insulating medium layer and a second insulating medium layer; the power chip is mounted on the AMB substrate, and the first insulating medium layer, the first metal layer, the second insulating medium layer and the second insulating metal layer are pressed on the power chip and the AMB substrate in sequence from bottom to top; the first metal layer and the second metal layer are both etched with current paths; the first insulating medium layer is provided with metal vias connecting the first metal layer with the AMB substrate and the power chip; the second insulating metal layer is provided with metal vias connecting the first metal layer with the second metal layer.

2. According to claim 1, the AMB substrate is embedded in the PCB package integrated power module, characterized in that: It also includes a solder-proof insulating layer, which is covered on the second metal layer.

3. According to claim 1, the AMB substrate is embedded in the PCB package integrated power module, characterized in that: It also includes a heat sink. The power chip is mounted on the copper clad layer on the upper surface of the AMB substrate. The heat sink is connected to the copper clad layer on the lower surface of the AMB substrate.

4. According to claim 3, the AMB substrate is embedded in the PCB package integrated power module, characterized in that: The copper thickness of the lower surface of the AMB substrate is greater than the copper thickness of the upper surface thereof.

5. According to claim 3, the AMB substrate is embedded in the PCB package integrated power module, characterized in that: It also includes insulating thermal conductive material, which is coated or mounted between the AMB substrate and the heat sink.

6. According to claim 1, the AMB substrate is embedded in the PCB package integrated power module, characterized in that: The first metal layer and the second metal layer are both made of copper.

7. A method for manufacturing an integrated power module with an AMB substrate embedded in a PCB package as claimed in any one of claims 1 to 6, comprising: Step a: Mount the power chip on the AMB substrate; Step b: combining the third metal layer, the fourth metal layer and the third insulating medium layer between the third metal layer and the fourth metal layer into an embedded substrate, and opening an empty groove in the embedded substrate; Step c: placing the AMB substrate mounted with the power chip into the empty slot, sequentially stacking the first insulating dielectric layer and the first metal layer on the power chip, the AMB substrate and the embedded substrate, and pressing them together to connect the AMB substrate, the power chip, the embedded substrate, the first insulating dielectric layer and the first metal layer and fill the empty slot, and making a current path in the first metal layer; Step d: making metal vias in the first insulating dielectric layer to connect the first metal layer with the AMB substrate and the power chip, and the power chip electrode and the copper layer on the upper surface of the AMB substrate are connected to the current path of the first metal layer through the metal vias; Step e: sequentially stacking a second insulating medium layer and a second metal layer on the first metal layer and laminating them to connect the first metal layer, the second insulating medium layer and the second metal layer, and making a current path in the second metal layer; Step f: making a metal via hole connecting the first metal layer and the second metal layer in the second insulating dielectric layer, and the current path of the second metal layer is connected to the current path of the first metal layer through the metal via hole; Step g: cutting the AMB substrate, power chip, embedded substrate, first insulating medium layer, first metal layer, second insulating medium layer and second metal layer that are pressed together according to the size of the AMB substrate to obtain an AMB substrate embedded in a PCB package integrated power module.

8. The method for manufacturing an integrated power module with an AMB substrate embedded in a PCB package according to claim 7, characterized in that: Also includes: Before step g, a solder resist insulating layer is formed on the second metal layer.

9. The method for manufacturing an AMB substrate embedded in a PCB package integrated power module according to claim 7, characterized in that: Also includes: After step g, an insulating thermally conductive material is coated or mounted on the copper layer on the lower surface of the AMB, and the copper layer on the lower surface of the AMB coated or mounted with the insulating thermally conductive material is connected to a heat sink.

10. The method for manufacturing an integrated power module with an AMB substrate embedded in a PCB package according to claim 7, characterized in that: The third metal layer and the fourth metal layer are both made of copper.

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