Encapsulation element with reduced bubble generation and method for manufacturing same

Abstract

The present application provides a packaging element capable of reducing bubble generation and a manufacturing method thereof. The manufacturing method of the packaging element is to fill a containing space and at least one through hole of a composite substrate with a plastic encapsulation layer, then form a redistribution layer, a top surface protection layer on the plastic encapsulation layer, and a bottom surface protection layer on the bottom surface of the composite substrate. The plastic encapsulation layer is coated with a support layer, which can maintain a sufficient thickness of the plastic encapsulation layer between the composite substrate and the redistribution layer, thereby reducing the arc breakdown condition of the packaging element in operation. In the manufacturing of the packaging element, sufficient material of the plastic encapsulation layer is provided to reduce the bubbles in the containing space and the at least one through hole, thereby overcoming the product reliability problem caused by bubbles.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of packaging element technology, and in particular, to a packaging element capable of reducing bubble generation and a manufacturing method thereof. BACKGROUND

[0002] A conventional printed circuit board (PCB) is manufactured by a plurality of manufacturing processes, such as drill, deposit, lamination, etc. A die can be embedded in a copper foil substrate (CCL) to form a packaging element. Please refer to FIG. 1. Figure 4 A packaging element 7 includes a copper foil substrate 70, a first metal layer 71 and a second metal layer 72 formed on the upper surface and the lower surface of the copper foil substrate 70, respectively, and a through hole 73 and a receiving space 74 in the copper foil substrate 70. A conductive pillar 730 is formed by depositing a metal (e.g., copper) in the through hole 73, and the conductive pillar 730 is used to electrically connect the first metal layer 71 and the second metal layer 72. The receiving space 74 is used to set a die 80, and an insulator 75 is filled in the receiving space 74.

[0003] However, during the process of depositing the conductive pillar 730, the speed of the metal deposited on the openings at both ends of the through hole 73 is faster than the speed of the metal deposited on the inside of the through hole 73. Under the condition of inconsistent deposition speed, the metal often covers air, so that there is at least one bubble in the conductive pillar 730. When the packaging element 7 is subjected to subsequent reliability tests, such as temperature cycling test (TCT), the at least one bubble will generate a gas pressure due to thermal expansion and contraction, resulting in the fracture of the conductive pillar 730 and affecting the electrical connection between the first metal layer 71 and the second metal layer 72.

[0004] In addition, during the process of forming the insulator 75 in the receiving space 74, there is often at least one bubble due to insufficient amount of the insulator 75, which occurs in the receiving space 74 and at the periphery of the die 80. The at least one bubble will become a path of arcing, which may cause the die 80 to be subjected to a high voltage, resulting in the conduction between a first surface 81 and a second surface 82 of the die 80 and short circuiting, or even causing the first metal layer 71 on the upper surface of the copper foil substrate 70 and the second metal layer 72 on the lower surface to be conductive and short circuiting. Therefore, how to reduce the generation of bubbles in the packaging element with the copper foil substrate is a problem to be improved in the manufacturing process of the conventional printed circuit board. SUMMARY

[0005] Therefore, the present application aims to provide a packaging element and a manufacturing method thereof, which can reduce the generation of air bubbles and overcome the problem of product reliability caused by air bubbles.

[0006] To achieve the above-mentioned purpose, the present application provides a packaging element, which can reduce the generation of air bubbles, comprising:

[0007] a composite substrate, which has an upper conductive layer and a lower conductive layer on its upper surface and lower surface respectively, and has a receiving space;

[0008] at least one via hole formed in the composite substrate and electrically connected to the upper conductive layer and the lower conductive layer;

[0009] a die disposed in the receiving space, which has a first surface and a second surface opposite to each other;

[0010] a plastic encapsulation layer covering the composite substrate and filling the interior of the at least one via hole and the receiving space to cover the die;

[0011] a support layer embedded in the plastic encapsulation layer and located above the upper conductive layer, the thickness of the support layer being at least 10 microns, wherein the plastic encapsulation layer between the bottom surface of the support layer and the upper conductive layer is defined as a first spacing layer, the plastic encapsulation layer between the top surface of the support layer and the top surface of the plastic encapsulation layer is defined as a second spacing layer, and the thickness of the first spacing layer and the thickness of the second spacing layer are at least 5 microns respectively; and

[0012] a redistribution layer disposed on the plastic encapsulation layer, which is electrically connected to the first surface of the die and the upper conductive layer;

[0013] wherein the plastic encapsulation layer is formed by laminating a first insulating sheet and a second insulating sheet, the interior of the second insulating sheet includes the support layer; the first insulating sheet and the second insulating sheet are semi-solidified by heat melting, and then flow into and fill the interior of the via hole and the receiving space.

[0014] Preferably, the plastic encapsulation layer includes a plurality of first holes and a plurality of second holes, the plurality of first holes expose part of the first surface of the die, and the plurality of second holes expose part of the upper conductive layer.

[0015] Preferably, the plurality of first holes and the plurality of second holes are inverted conical.

[0016] Preferably, the central position of the inner wall of the plurality of first holes is recessed relative to the port position thereof, and the central position of the inner wall of the plurality of second holes is recessed relative to the port position thereof.

[0017] Preferably, the support layer is formed of glass fiber.

[0018] Preferably, the plastic encapsulation layer is formed of unsaturated polyester resin, epoxy resin, phenol resin or BT resin.

[0019] Preferably, the thickness of the composite substrate, the thickness of the upper conductive layer and the thickness of the lower conductive layer are greater than or equal to 210 microns.

[0020] Preferably, the inner diameter of the via at the two ends is smaller than the inner diameter of the via at the central position.

[0021] Preferably, the encapsulation element capable of reducing bubble generation further comprises:

[0022] a top surface protection layer covering the redistribution layer and exposing part of the redistribution layer to form at least one surface solder joint;

[0023] a bottom surface protection layer covering the second surface of the die and the lower conductive layer;

[0024] a bottom seed layer disposed between the bottom surface protection layer and the second surface of the die, and between the bottom surface protection layer and the lower conductive layer; and

[0025] a surface metal layer disposed on at least one of the surface solder joints.

[0026] Preferably, the redistribution layer has at least one chip connector and at least one substrate connector, at least one of the chip connectors electrically contacts the first surface of the die, at least one of the substrate connectors electrically contacts the upper conductive layer, and the shape of at least one of the chip connectors and at least one of the substrate connectors tapers toward the composite substrate along the top surface of the plastic encapsulation layer.

[0027] Preferably, the redistribution layer has at least one chip connector and at least one substrate connector, at least one of the chip connectors electrically contacts the first surface of the die, at least one of the substrate connectors electrically contacts the upper conductive layer, and at least one of the chip connectors and at least one of the substrate connectors is a conductive pillar, the diameter of the two ends of the conductive pillar is smaller than the diameter of the central position. Another object of the present application is to provide a method for manufacturing an encapsulation element capable of reducing bubble generation, the method comprising:

[0028] depositing metal on a composite substrate having at least one through hole to form an upper conductive layer and a lower conductive layer on the upper surface and the lower surface of the composite substrate, respectively, the at least one through hole becomes a via after metal deposition, and the at least one via is electrically connected to the upper conductive layer and the lower conductive layer;

[0029] forming a receiving space through the composite substrate, and attaching an adhesive film on the lower conductive layer to seal a bottom of the receiving space, and disposing a die in the receiving space and on the adhesive film, wherein the die has a first surface and a second surface, the first surface is exposed in the receiving space, and the second surface is disposed on the adhesive film;

[0030] stacking a first insulating sheet and a second insulating sheet on the upper conductive layer in sequence, wherein the second insulating sheet includes a support layer inside, and an upper surface of the second insulating sheet has a metal foil;

[0031] laminating the first insulating sheet and the second insulating sheet, so that the first insulating sheet and the second insulating sheet are thermally fused to be semi-solidified, and then flow into and fill inside the at least one via hole and the receiving space to jointly form a plastic encapsulation layer, and the plastic encapsulation layer covers the composite substrate and encapsulates the die, the support layer is located above the composite substrate and encapsulates the plastic encapsulation layer, wherein the plastic encapsulation layer between a bottom surface of the support layer and the upper conductive layer is defined as a first spacing layer, and the plastic encapsulation layer between a top surface of the support layer and a top surface of the plastic encapsulation layer is defined as a second spacing layer;

[0032] forming a redistribution layer on the plastic encapsulation layer, and the redistribution layer is electrically connected to the first surface of the die and the upper conductive layer.

[0033] Preferably, the manufacturing process of forming the redistribution layer includes:

[0034] forming a plurality of holes on the metal foil, the plurality of holes include at least one first hole and at least one second hole, the at least one first hole exposes at least one first solder point on the first surface of the die, and the at least one second hole exposes at least one second solder point on the upper conductive layer;

[0035] removing the metal foil to expose the plastic encapsulation layer, and removing the adhesive film attached to the lower conductive layer to expose the lower conductive layer and a bottom of the receiving space;

[0036] depositing a top seed layer on a top surface of the plastic encapsulation layer and inner walls of the plurality of holes, and then depositing a connecting metal, wherein the top seed layer and the connecting metal deposited in the at least one first hole are at least one chip connecting piece, the top seed layer and the connecting metal deposited in the at least one second hole are at least one substrate connecting piece, at least one chip connecting piece electrically contacts at least one first solder point of the die, and at least one substrate connecting piece electrically contacts at least one second solder point of the upper conductive layer.

[0037] Preferably, before the metal foil is removed, the plurality of holes are etched so that the shape of the plurality of holes tapers along the direction from the top protective layer toward the composite substrate.

[0038] Preferably, before the metal foil is removed, the plurality of holes are etched so that the shape of the plurality of holes is a cylinder, and the diameter of the two ends of the cylinder is smaller than the diameter of the central position.

[0039] Preferably, the packaging element manufacturing method that can reduce the generation of bubbles further comprises:

[0040] A top protective layer is covered on the redistribution layer and exposes part of the redistribution layer to form at least one surface soldering point, and a bottom protective layer is covered on the second surface of the die and the lower conductive layer.

[0041] Preferably, when the top seed layer is deposited, a bottom seed layer is further deposited on the second surface of the die and the lower conductive layer, and after the bottom seed layer is deposited, the bottom protective layer is formed on the bottom seed layer; and at least one surface soldering point is surface treated to plate a surface metal layer.

[0042] Preferably, when each of the through holes is deposited, the inner diameter of the two ends of each of the through holes is smaller than the inner diameter of the central position of the through hole. Compared with the prior art, the technical solution of the present application has the following characteristics and advantages:

[0043] When the packaging element of the present application deposits metal on the inner wall of the at least one through hole, the deposition time is controlled so that the opening of the two ends of the at least one through hole is not closed. Compared with the packaging element of the prior art, the packaging element of the present application does not form a conductive column but forms the at least one through hole, and fills the plastic encapsulation layer in the at least one through hole, reduces the bubbles generated due to the inconsistent deposition rate of metal in the manufacturing process, and when the packaging element of the present application is subjected to reliability test, overcomes the problem of air pressure caused by bubbles in the prior art and increases the reliability of the product.

[0044] And in the process of making the packaging element of the present application, a step of setting a first insulating sheet is added, which can be hot-melted to provide a sufficient amount of a first insulating material to fill the accommodation space and cover the die, reducing the phenomenon of arc discharge caused by the bubbles generated at the periphery of the die, thereby stabilizing the electrical performance of the die; and in the process of lamination, a sufficient amount of the first insulating material can not only fill the at least one through hole and the accommodation space, but also form a thickness on the upper conductive layer, i.e. the first spacing layer, because the bottom of the support layer has a sufficient thickness (greater than or equal to 5 microns) of the first spacing layer, so that a second insulating material originally located at the top of the support layer can still maintain at the top of the support layer after being hot-melted to form the second spacing layer, and in the case of sufficient thickness between the upper conductive layer and the redistribution layer, when the upper conductive layer or the redistribution layer is subjected to a high voltage, the condition of arc breakdown (or collapse) can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0045] Figure 1 : Side view cross-sectional view of the composite substrate in the packaging element of the present application;

[0046] Figures 2A-2N : Schematic diagram of the manufacturing process of the first embodiment of the manufacturing method of the present application;

[0047] Figures 3A-3N : Schematic diagram of the manufacturing process of the second embodiment of the manufacturing method of the present application;

[0048] Figure 4 : Side view cross-sectional view of the existing packaging element. DETAILED DESCRIPTION

[0049] In order to understand the technical features and practical effects of the present application in detail, and to realize the application content, the embodiments shown in the drawings are described in detail as follows:

[0050] The present application provides a packaging element capable of reducing bubble generation and a manufacturing method thereof, wherein the packaging element can be a panel level package (PLP) element, and the panel level package (PLP) refers to a manufacturing process of packaging one or more dies completed by integrated circuit (IC) manufacturing with a substrate as a carrier. The packaging element manufacturing method capable of reducing bubble generation and its structure of the present application are described below with reference to the drawings.

[0051] Please refer to Figure 1 , Figure 1Fig. 1 is a side sectional view of a composite substrate 10, which is formed by disposing an upper metal sheet 11A and a lower metal sheet 11B on the top surface and the bottom surface of a base layer 11, respectively. For example, the composite substrate 10 can be a copper clad laminate (CCL), i.e., the upper metal sheet 11A and the lower metal sheet 11B are copper foils, and the material of the base layer 11 can be BT resin (Bismaleimide Triazine, BT).

[0052] Figures 2A-2N Fig. 2 is a schematic diagram of a first embodiment of a packaging element manufacturing process according to the present application, which can reduce the generation of air bubbles. First, refer to Fig. 2. Figure 2A The composite substrate 10 is subjected to a drill manufacturing process to form at least one through hole 100 (Plating Through Hole, PTH). For example, the at least one through hole 100 can be formed by mechanical drill processing, laser drilling, or the like.

[0053] Refer to Fig. 3. Figure 2B Next, the composite substrate 10 is subjected to metal deposition to form an upper conductive layer 12 and a lower conductive layer 13 on the upper metal sheet 11A and the lower metal sheet 11B of the composite substrate 10, respectively. Specifically, the metal deposition can adopt an electro-less plating manufacturing process, an electroplating manufacturing process, or the like, to deposit a metal (e.g., copper) on the upper metal sheet 11A and the lower metal sheet 11B of the composite substrate 10 to form the upper conductive layer 12 and the lower conductive layer 13, respectively. The thickness of the composite substrate 10, the thickness of the upper conductive layer 12, and the thickness of the lower conductive layer 13 are collectively defined as a substrate thickness TO, which is preferably greater than or equal to 210 microns.

[0054] In addition, the upper conductive layer 12 and the lower conductive layer 13 can have different conductive patterns, respectively. For example, an alignment hole 120 can be formed on the upper conductive layer 12, which can be used for identification in subsequent manufacturing processes, such as an automatic optical inspection (AOI) machine, which can correct the position of the composite substrate 10 through the alignment hole 120, so that a die can be accurately disposed in the composite substrate 10.

[0055] In the process of depositing the metal in the composite substrate 10, the inner wall of the at least one through hole 100 is also deposited with the metal to become a via hole 101, the at least one via hole 101 electrically connects the upper conductive layer 12 and the lower conductive layer 13, and in the process of depositing the metal in the at least one through hole 100, compared to the inside of the at least one through hole 100, metal ions are more likely to gather at the openings at both ends of the at least one through hole 100 (the characteristic of charge tip gathering), so that the inner diameter of each via hole 101 at the openings at both ends is smaller than the inner diameter of the via hole 101 at the central position.

[0056] Please refer to Figure 2C and Figure 2D The composite substrate 10 after metal deposition is drilled again to form a containing space 110 that penetrates the composite substrate 10, and a film 20 is attached to the lower conductive layer 13 to close the bottom of the containing space 110. Please refer to Figure 2E A die 30 is disposed in the containing space 110 and on the film 20, the die 30 has a first surface 31 and a second surface 32 opposite to each other, the first surface 31 is located at the top of the die 30 and exposed in the containing space 110, and the second surface 32 is fixed on the film 20.

[0057] Please refer to Figure 2F A first insulating sheet 40 and a second insulating sheet 41 are sequentially stacked on the upper conductive layer 12, specifically, the first insulating sheet 40 is composed of a first insulating material 400, the second insulating sheet 41 includes a second insulating material 410, a support layer 411 and a metal foil 412, the second insulating material 410 covers the support layer 411, and the metal foil 412 covers the second insulating material 410 and the support layer 411, wherein the first insulating material 400 and the second insulating material 410 are both thermosetting materials, such as resin, unsaturated polyester resin, epoxy resin, phenolic resin or BT resin (Bismaleimide Triazine, BT), and the support layer 411 is mainly formed by interlacing glass fibers, specifically, the support layer 411 is a prepreg, such as a prepreg film produced by impregnating semi-cured (B-stage) epoxy resin with reinforced electronic-grade glass fiber cloth.

[0058] Please refer to Figure 2G, then laminating the first insulating sheet 40 and the second insulating sheet 41 to form a plastic encapsulation layer, in particular, the first insulating material 400 and the second insulating material 410 are melted and semi-solidified (flowable) by heating during the laminating process, the first insulating material 400 and the second insulating material 410 form the plastic encapsulation layer together, the first insulating material 400 flows and fills the at least one via hole 101 and the accommodating space 110, the die 30 is covered by the first insulating material 400, and the first insulating material 400 covers the upper conductive layer 12, preferably, the alignment hole 120 is also filled with the first insulating material 400; the second insulating material 410 covers the first insulating material 400, so that the support layer 411 is embedded in the plastic encapsulation layer and located above the upper conductive layer 12.

[0059] The plastic encapsulation layer between the bottom surface of the support layer 411 and the upper conductive layer 12 is defined as a first spacing layer L1, and the plastic encapsulation layer between the top surface of the support layer 411 and the top surface of the plastic encapsulation layer is defined as a second spacing layer L2, the first spacing layer L1 can be formed by the first insulating material 400, or can be formed by the first insulating material 400 and the second insulating material 410 together, and the second spacing layer L2 is formed by the second insulating material 410, and the first spacing layer L1 and the second spacing layer L2 have a first thickness and a second thickness respectively, the first thickness and the second thickness are both greater than or equal to 5 microns, the first thickness is sufficient to fill the accommodating space 110 and the via hole 101 with pure resin without bubbles, wherein the pure resin is the first insulating material 400 or the first insulating material 400 and the second insulating material 410; the second thickness is sufficient to reduce the occurrence of arc breakdown during packaging. The thickness of the support layer 411 is at least 10 microns, which makes the overall structure more stable.

[0060] Please refer to Figures 2H-2L , which is a process flow for forming a redistribution layer on the plastic encapsulation layer, first please refer to Figure 2H , a hole drilling process is performed to form a plurality of holes in the metal foil 412, the plurality of holes include at least one first hole 413 and at least one second hole 414, the at least one first hole 413 is used to expose part of the first surface 31 of the die 30, and the at least one second hole 414 is used to expose part of the upper conductive layer 12, in particular, at least one first solder joint (not shown in the figure) is formed on the first surface 31, and at least one second solder joint (not shown in the figure) is formed on the upper conductive layer 12, the at least one first hole 413 is used to expose the at least one first solder joint, and the at least one second hole 414 is used to expose the at least one second solder joint.

[0061] And after the drilling process is completed, the plurality of holes will be subjected to a plasma etching process to remove the debris left in the holes by drilling, wherein the shape of the plurality of holes can be further determined by controlling the length of the plasma etching time, and in the embodiment, the shape of the plurality of holes is tapered along the top surface of the molding layer towards the composite substrate 10, i.e. the inner diameter of each hole gradually decreases along the top surface of the molding layer towards the composite substrate 10.

[0062] Referring to Figure 2I , the metal foil 412 in Figure 2H is removed by etching to expose the top surface of the second spacing layer L2 (the molding layer). Referring to Figure 2J , the adhesive film 20 attached to the lower conductive layer 13 is removed to expose the lower conductive layer 13 and the bottom of the accommodation space 110 (the second surface 32 of the die 30). Referring to Figure 2K , a top seed layer 51 is formed on the top surface of the second spacing layer L2 (the molding layer) and the inner wall of the plurality of holes by an electro-less plating process, and a bottom seed layer 52 is also formed on the lower conductive layer 13 and the bottom surface of the accommodation space 110 (the second surface 32 of the die 30) by the aforementioned process, wherein because the shape of the plurality of holes is tapered, the top seed layer 51 can also be formed by a sputtering process.

[0063] Referring to Figure 2L , a connection metal is deposited on the top seed layer 51 on the top surface of the second spacing layer L2, so that the top seed layer 51 and a connection metal layer 53 are stacked on the top surface of the second spacing layer L2, and the connection metal is also deposited on the top seed layer 51 in the plurality of holes, so that the at least one first hole 413 is filled with the top seed layer 51 and the connection metal to form at least one chip connection 54, the at least one second hole 414 is filled with the top seed layer 51 and the connection metal to form at least one substrate connection 55, the at least one chip connection 54 is electrically connected to the connection metal layer 53 and the first surface 31 of the die 30 (the at least one first solder joint), the at least one substrate connection 55 is electrically connected to the connection metal layer 53 and the upper conductive layer 12 (the at least one second solder joint), and in the embodiment, the shape of the at least one chip connection 54 and the at least one substrate connection 55 is tapered along the bottom surface of the molding layer towards the composite substrate 10, wherein the redistribution layer includes the top seed layer 51, the connection metal layer 53, the at least one chip connection 54, and the at least one substrate connection 55.

[0064] Referring to Figure 2M , a top surface protection layer 61 is formed on the connection metal layer 53 (the redistribution layer) and exposes part of the connection metal layer 53 (the redistribution layer) to form at least one surface soldering point 530, and a bottom surface protection layer 62 is formed on the bottom seed layer 52. Referring to Figure 2N , a final surface treatment is performed to form a surface metal layer 63 on the at least one surface soldering point 530, which can be electrically connected to the first surface 31 of the die 30 (the at least one first soldering point) through the connection metal layer 53 and the at least one chip connecting element 54, or electrically connected to the upper conductive layer 12 (the at least one second soldering point) through the connection metal layer 53 and the at least one substrate connecting element 55.

[0065] According to the foregoing Figures 2A-2N , the flowchart is completed to form the first embodiment of the packaging element of the present application capable of reducing bubble generation (see Figure 2N ), and the packaging element of the present application also has a second embodiment, please refer to Figures 3A-3N , which is a schematic diagram of the second embodiment of the flowchart for manufacturing the packaging element of the present application capable of reducing bubble generation, wherein Figures 3A-3G , the flowchart is the same as that in Figures 2A-2G , and will not be described here. The second embodiment of the flowchart for manufacturing the packaging element of the present application capable of reducing bubble generation is different from the first embodiment in that Figure 3H , the manufacturing process steps shown in the figure.

[0066] Referring to Figure 3H , after the plurality of holes (including the at least one first hole 413 and the at least one second hole 414) are formed by the laser drilling manufacturing process, the plasma etching time is controlled to be longer than that of the first embodiment, so that the shapes of the plurality of holes are respectively a cylinder, and the diameters of the two ends of the cylinder are smaller than that of the central position, that is, the barrel shape, that is, each hole is along the direction of the top surface protection layer 61 towards the composite substrate 10, and the inner wall central position of each hole is concave relative to the port position of each hole. The subsequent manufacturing process steps are basically the same as those of the first embodiment of the present application, and will not be described here. The second embodiment is different from the first embodiment in that, please refer to Figure 3K , when the top seed layer 51 is formed on the top surface of the second spacing layer L2 and the inner wall of the plurality of holes, because the shapes of the plurality of holes in the present embodiment are barrel-shaped, the top seed layer 51 cannot be formed by sputtering, please refer to Figure 3LAs described in the first embodiment, the at least one chip connecting member 54 and the at least one substrate connecting member 55 are conductive pillars, and in this embodiment, because of the shape of the plurality of holes, the diameters of the ends of the conductive pillars are smaller than the diameter of the central portion; according to Figures 3A-3N After the flow process is completed, a package element of the present application is formed, which can reduce the generation of bubbles (see Figure 3N ) in the second embodiment.

[0067] Regardless of the first embodiment or the second embodiment of the package element of the present application, when the metal is deposited on the inner wall of the at least one through hole 100, the deposition time is controlled so that the openings at both ends of the at least one through hole 100 are not closed. Compared with the package element 7 of the prior art (see Figure 4 ), the package element of the present application does not form a conductive pillar but forms the at least one through hole 101, and fills the plastic encapsulation layer in the at least one through hole 101, which reduces the bubbles generated due to the inconsistent deposition rate of the metal during the manufacturing process. When the package element of the present application is subjected to reliability testing, the problem of air pressure caused by bubbles in the prior art is overcome, thereby increasing the reliability of the product.

[0068] In addition, during the manufacturing process of the package element of the present application, a step of providing a first insulating sheet 40 is added. The first insulating sheet 40 can be heat-fused to provide a sufficient amount of the first insulating material 400 to fill the accommodation space 110 and cover the die 30, thereby reducing the generation of bubbles at the periphery of the die 30 and reducing the phenomenon of arcing, thereby stabilizing the electrical performance of the die 30. When the first insulating sheet 40 can provide a sufficient amount of the first insulating material 400, the overall thickness of the composite substrate 10 (including the upper conductive layer 12 and the lower conductive layer 13) can be increased. The effect is that the accommodation space 110 can be relatively increased, i.e., the thickness of the die 30 can be relatively increased. When the thickness of the die 30 is increased, the die 30 will not need to be thinned during the manufacturing process, thereby increasing the yield, or the die 30 will have sufficient space for integrated circuit design layout during the manufacturing process.

[0069] Furthermore, during the lamination process, the first insulating material 400 is able to form a thickness on the upper conductive layer 12, i.e. to form the first spacing layer L1 together with the second insulating material 410, in addition to filling the at least one via hole 101 and the accommodating space 110, because the bottom of the support layer 411 has a sufficient thickness (the first thickness is greater than or equal to 5 microns) of the first spacing layer L1, so that the second insulating material 410 originally on the top of the support layer 411 can still be maintained on the top of the support layer 411 after being hot melted to form the second spacing layer L2; the effect of the second spacing layer L2 with sufficient thickness on the top of the support layer 411 is that, when the top seed layer 51 is formed, the second spacing layer L2 with sufficient thickness can avoid the fibers in the support layer 411 from being exposed, thereby improving the plating capability of the top seed layer 51 (the top seed layer 51 is not easy to be plated on the fibers).

[0070] In addition, when the upper conductive layer 12 or the connection metal layer 53 is subjected to a high voltage, the condition of arc breakdown (or collapse) can be reduced to occur when the upper conductive layer 12 and the connection metal layer 53 have sufficient thickness, i.e. the upper conductive layer 12 and the connection metal layer 53 have sufficient thickness, which can improve the withstand voltage capability of the packaging element of the present application. In addition, in addition to the above-mentioned effects, the plurality of holes in the barrel shape of the second embodiment of the packaging element of the present application have the effect that the connection metal is not only deposited on the top seed layer 51, but also engaged in the plurality of holes to be less easy to be loosened, thereby being able to increase the structural stability of the packaging element of the present application.

[0071] The above only describes the embodiments or examples of the technical means adopted by the present application to solve the problems, and does not limit the scope of the patent implementation of the present application. That is, any equivalent changes and modifications made in accordance with the scope of the present application are covered by the scope of the present application.

Claims

1. A packaging element that reduces bubble formation, characterized in that, include: A composite substrate, wherein the upper surface and the lower surface of the composite substrate have an upper conductive layer and a lower conductive layer respectively, and the composite substrate has an accommodating space. At least one via is formed in the composite substrate and electrically connected to the upper conductive layer and the lower conductive layer; A grain is disposed in the accommodating space, the grain having a first surface and a second surface opposite to each other; A molding compound is applied to the composite substrate and fills the interior of at least one of the vias and the accommodating space to encapsulate the grains. A support layer, embedded within the molding compound and located above the upper conductive layer, the support layer having a thickness of at least 10 micrometers, wherein the molding compound between the bottom surface of the support layer and the upper conductive layer is defined as a first spacer layer, and the molding compound between the top surface of the support layer and the top surface of the molding compound is defined as a second spacer layer, the thickness of the first spacer layer and the thickness of the second spacer layer are each at least 5 micrometers; and A redistribution layer is disposed on the molding compound layer, and the redistribution layer is electrically connected to the first surface of the die and the upper conductive layer; The molding layer is formed by laminating a first insulating sheet and a second insulating sheet, and the second insulating sheet includes the support layer inside; the first insulating sheet and the second insulating sheet are heated and melted to become semi-solidified, and then flow into and fill the interior of the through hole and the accommodating space.

2. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, The molding layer includes a plurality of first holes and a plurality of second holes, wherein the plurality of first holes expose a portion of the first surface of the grain, and the plurality of second holes expose a portion of the upper conductive layer.

3. The encapsulation element for reducing bubble formation according to claim 2, characterized in that, The multiple first holes and the multiple second holes are all inverted cone shape.

4. The encapsulation element for reducing bubble formation according to claim 2, characterized in that, The central position of the inner wall of the plurality of first holes is concave relative to its port position, and the central position of the inner wall of the plurality of second holes is concave relative to its port position.

5. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, The support layer is formed of glass fiber.

6. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, The molding layer is formed of unsaturated polyester resin, epoxy resin, phenolic resin or BT resin.

7. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, The sum of the thickness of the composite substrate, the thickness of the upper conductive layer, and the thickness of the lower conductive layer is greater than or equal to 210 micrometers.

8. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, The inner diameter of the openings at both ends of each of the aforementioned through holes is smaller than the inner diameter at the center of the through hole.

9. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, Also includes: A top protective layer covers the redistribution layer and exposes a portion of the redistribution layer to form at least one surface solder joint; A bottom protective layer covers the second surface of the grain and the lower conductive layer; A bottom seed layer is disposed between the bottom protective layer and the second surface of the grain, and between the bottom protective layer and the lower conductive layer; and A surface metal layer is disposed on at least one of the surface solder joints.

10. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, The redistribution layer has at least one chip connector and at least one substrate connector. At least one chip connector is electrically in contact with the first surface of the die, and at least one substrate connector is electrically in contact with the upper conductive layer. The shapes of at least one chip connector and at least one substrate connector taper along the top surface of the molding compound towards the composite substrate.

11. The encapsulation element for reducing bubble formation according to claim 1, characterized in that, The redistribution layer has at least one chip connector and at least one substrate connector. At least one chip connector is electrically in contact with the first surface of the die, and at least one substrate connector is electrically in contact with the upper conductive layer. At least one chip connector and at least one substrate connector are conductive pillars, and the diameters at both ends of the conductive pillar are smaller than the diameter at its central position.

12. A method for manufacturing a packaged component that reduces bubble formation, characterized in that, include: Metal deposition is performed on a composite substrate having at least one through hole to form an upper conductive layer and a lower conductive layer on the upper and lower surfaces of the composite substrate, respectively. The at least one through hole is metal deposited to become a via, and the at least one via is electrically connected to the upper conductive layer and the lower conductive layer. An accommodating space penetrating the composite substrate is formed on the composite substrate, and an adhesive film is attached to the lower conductive layer to seal the bottom of the accommodating space. A grain is disposed in the accommodating space and on the adhesive film, wherein the grain has a first surface and a second surface, the first surface is exposed in the accommodating space, and the second surface is disposed on the adhesive film. A first insulating sheet and a second insulating sheet are stacked sequentially on the upper conductive layer, wherein the interior of the second insulating sheet includes a support layer and the upper surface of the second insulating sheet has a metal foil; The first insulating sheet and the second insulating sheet are laminated to heat-melt the first insulating sheet and the second insulating sheet to form a semi-cured state, which then flows into and fills the interior of the at least one through hole and the accommodating space to jointly form a molding compound layer. The molding compound layer covers the composite substrate and encapsulates the grain. The support layer is located above the composite substrate and encapsulates the molding compound layer. The molding compound layer between the bottom surface of the support layer and the upper conductive layer is defined as a first spacer layer, and the molding compound layer between the top surface of the support layer and the top surface of the molding compound layer is defined as a second spacer layer. A redistribution layer is formed on the molding compound layer, and the redistribution layer is electrically connected to the first surface of the die and the upper conductive layer.

13. The method for manufacturing a packaged element with reduced bubble generation according to claim 12, characterized in that, The fabrication process for forming the rewiring layer includes: A plurality of holes are formed on the metal foil, the plurality of holes including at least one first hole and at least one second hole, the at least one first hole exposing at least one first solder joint on the first surface of the grain, and the at least one second hole exposing at least one second solder joint on the upper conductive layer; Remove the metal foil to expose the molding layer, and remove the adhesive film attached to the lower conductive layer to expose the lower conductive layer and the bottom of the accommodating space; A seed layer is first deposited on the top surface of the molding compound and on the inner wall of the plurality of holes, and then a connecting metal is deposited. The seed layer and the connecting metal deposited in the at least one first hole are at least one chip connector, and the seed layer and the connecting metal deposited in the at least one second hole are at least one substrate connector. At least one chip connector is electrically in contact with at least one first solder joint of the die, and at least one substrate connector is electrically in contact with at least one second solder joint of the upper conductive layer.

14. The method for manufacturing a packaged element with reduced bubble generation according to claim 13, characterized in that, Before removing the metal foil, the plurality of holes are etched so that the shape of the plurality of holes tapers along the direction of the top protective layer toward the composite substrate.

15. The method for manufacturing a packaged element that reduces bubble formation according to claim 13, characterized in that, Before removing the metal foil, the plurality of holes are etched to make the shape of the plurality of holes into a cylinder, and the diameters at both ends of the cylinder are smaller than the diameter at its center.

16. The method for manufacturing an encapsulated element with reduced bubble formation according to claim 12, characterized in that, Also includes: A top protective layer is covered on the redistribution layer, exposing a portion of the redistribution layer to form at least one surface solder joint, and a bottom protective layer is covered on the second surface of the die and the lower conductive layer.

17. The method for manufacturing a packaged element with reduced bubble generation according to claim 16, characterized in that, During the deposition of the top seed layer, a bottom seed layer is further deposited on the second surface of the grain and the lower conductive layer. After the bottom seed layer is deposited, the bottom protective layer is formed on the bottom seed layer. At least one of the surface solder joints is surface treated to deposit a surface metal layer.

18. The method for manufacturing a packaged element with reduced bubble generation according to claim 12, characterized in that, When depositing and forming each of the vias, the inner diameter of the openings at opposite ends of each via is made smaller than the inner diameter at the center of the via.

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