Thyristor based on compatible temperature sensor and preparation method thereof

Abstract

The application discloses a thyristor based on a compatible temperature sensor and a preparation method thereof, which comprises a substrate, a buffer layer, a drift layer, a base area, a compatible sensor, a plurality of electrode arrays and a cathode. The application adopts a semiconductor device as the compatible temperature sensor, and the compatible temperature sensor made of the semiconductor device has the advantages of high linearity and sensitivity. The compatible temperature sensor is integrated in the thyristor, the integration degree of the power device is improved, and the temperature measurement system of the thyristor is more compact and efficient. The technology can monitor the internal temperature of the thyristor in real time, ensure the accuracy and real-time performance of the measurement result, and provide a powerful guarantee for the stable operation of the thyristor power electronic system. After the compatible temperature sensor is integrated, the basic working characteristics of the thyristor are not affected, and the excellent performance and reliability are still maintained. Moreover, the thyristor terminal is adopted as an isolation area to realize process compatibility, and process steps are saved.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor manufacturing, and particularly relates to a thyristor based on a compatible temperature sensor and a preparation method thereof. BACKGROUND

[0002] The silicon carbide thyristor has excellent current handling capacity, high blocking voltage, high working temperature and high working frequency, etc., but while having the above excellent performances, it also brings a large number of reliability problems. In the use process of the thyristor and other power devices, many temperature-related problems are often encountered. The increase of the working temperature not only reduces the long-term working reliability of the device, but also causes the device to fail in heat in the application scenarios such as short circuit, pulse and switch, thereby causing irreversible damage to the system. Taking the silicon carbide thyristor as an example, it needs to withstand a high current peak in the pulse switch system. The high current may cause the anode metal to melt or slowly increase the device leakage current under the repeated discharge thermal stress, thereby reducing the reliability of the pulse power system.

[0003] At present, in order to monitor the temperature change of the thyristor, an external temperature measuring circuit or a shell temperature of the thyristor is generally used for temperature monitoring. The external temperature measuring circuit generally collects characteristic parameters of the thyristor during working, and calculates the junction temperature by establishing a thermal resistance model in a data calculation module.

[0004] The existing monitoring of the temperature change of the thyristor has the defects that the internal junction temperature change of the thyristor cannot be monitored in real time, the measured temperature is not accurate, the work of the thyristor is affected, and the area occupied is large and the integration degree is small. SUMMARY

[0005] In order to solve the above problems in the prior art, the application provides a thyristor based on a compatible temperature sensor and a preparation method thereof. The technical problems to be solved by the application are solved by the following technical scheme:

[0006] In a first aspect, the application provides a thyristor based on a compatible temperature sensor, comprising:

[0007] a substrate, a buffer layer, a drift layer, a base region, a compatible temperature sensor, a plurality of electrode arrays, a cathode and a terminal; wherein,

[0008] The substrate, the buffer layer, the drift layer and the base region are sequentially arranged from bottom to top. The structure formed by the drift layer and the base region has two grooves, the depth of the grooves exceeds the thickness of the base region, and does not exceed the thickness of the drift layer. The terminal is arranged in the drift layer below the grooves.

[0009] The compatible temperature sensor is arranged between two grooves; the compatible temperature sensor is a PiN temperature sensor using a terminal as its isolation region;

[0010] The electrode array is symmetrically arranged on the base region on both sides of the compatible sensor;

[0011] The cathode is arranged on the lower surface of the substrate.

[0012] In one embodiment of the present application, the material of the substrate comprises silicon carbide; the doping type of the substrate is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 .

[0013] In one embodiment of the present application, the material of the buffer layer comprises silicon carbide, and the thickness is 1-3 μm; the buffer layer is P-type light doping, and the doping concentration is 1×10 17 -8×10 17 cm -3 .

[0014] In one embodiment of the present application, the material of the drift layer comprises silicon carbide, and the thickness is 20-40 μm; the drift layer is P-type light doping, and the doping concentration is 1×10 15 -6×10 15 cm -3 .

[0015] In one embodiment of the present application, the material of the base region comprises silicon carbide, and the thickness is 4-6 μm; the base region is N-type light doping, and the doping concentration is 1×10 17 -3×10 17 cm -3 .

[0016] In one embodiment of the present application, the compatible sensor comprises:

[0017] an isolation region, an i region, a P region, an N region, a sensor anode, a sensor cathode and an isolation electrode; wherein,

[0018] The isolation region is composed of a terminal and a partial region of the drift layer between the terminals;

[0019] The i region is composed of a partial region of the base region on the upper surface of a partial region of the drift layer between the terminals;

[0020] The P region is arranged on the upper surface of one end of the i region;

[0021] The N region is arranged in the top region of the other end of the i region;

[0022] The sensor anode is arranged on the upper surface of the P region.

[0023] The sensor cathode is arranged on the upper surface of the N region.

[0024] The isolation electrode is arranged on the upper surface of the terminal.

[0025] In an embodiment of the present application, the electrode array comprises:

[0026] an anode layer, an anode, two gate electrode regions and two gate electrodes; wherein,

[0027] The anode layer is arranged on the upper surface of the base region.

[0028] The anode is arranged on the upper surface of the anode layer.

[0029] The two gate electrode regions are respectively arranged in the base regions on the two sides of the anode layer.

[0030] The two gate electrodes are respectively arranged on the upper surfaces of the corresponding gate electrode regions.

[0031] In an embodiment of the present application, the thickness of the terminal is 0.5-2 μm, and the width is 3-7 μm; the terminal is N-type doped, and the doping concentration is 1×10 18 -5×10 18 cm -3 .

[0032] In a second aspect, the present application provides a preparation method of a thyristor based on a compatible temperature sensor, comprising:

[0033] Selecting a substrate, performing epitaxial growth and multi-layer ion implantation on the substrate to obtain a buffer layer, a drift layer, a base region and a silicon carbide P-type anode layer;

[0034] Etching the silicon carbide P-type anode layer using a preset photolithography mask, etching into the drift layer to form two grooves and a sensor region between the two grooves;

[0035] Re-etching the etched silicon carbide P-type anode layer to form a plurality of anode layers on part of the base regions on the two sides of the sensor region and to form a P region in part of the base region in the sensor region;

[0036] Performing ion implantation on part of the base regions on the two sides of the anode layer, part of the regions near the sensor region at the bottoms of the two grooves and part of the base regions in the sensor region away from the P region to form a plurality of gate electrode regions, a terminal and an N region, respectively;

[0037] A gate electrode is prepared on the upper surface of the gate electrode area, an anode is prepared on the upper surface of the anode layer, a sensor anode is prepared on the upper surface of the P region, a sensor cathode is prepared on the upper surface of the N region, and an isolation electrode is prepared on the upper surface of the terminal; the terminal and the terminal drift layer partial area between the terminals constitute an isolation area, and the base region partial area in the sensor area constitutes an i region; the isolation area, the i region, the P region, the N region, the sensor anode, the sensor cathode, and the isolation electrode constitute a compatible sensor; and the anode layer, the anode, the two gate electrode areas on both sides of the anode layer, and the corresponding two gate electrodes constitute an electrode array.

[0038] A cathode is prepared on the lower surface of the substrate.

[0039] The application has the following beneficial effects:

[0040] In the scheme provided by the application, a semiconductor device is used as a compatible temperature sensor, and the compatible temperature sensor made of the semiconductor device has the advantages of high linearity and sensitivity; the compatible temperature sensor is integrated in the thyristor, thereby improving the integration degree of the power device, and the combination of the compatible temperature sensor and the thyristor makes the thyristor temperature measurement system more compact and efficient. Meanwhile, the technology can realize real-time temperature monitoring of the interior of the thyristor, thereby ensuring the accuracy and real-time performance of the measurement results and providing a strong guarantee for the stable operation of the thyristor power electronic system. More importantly, after the integration of the compatible temperature sensor, the basic working characteristics of the thyristor are not affected, and the thyristor still maintains excellent performance and reliability. Moreover, the use of the thyristor terminal as the isolation area realizes process compatibility and saves process steps. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 A flowchart of a thyristor based on a compatible temperature sensor provided by an embodiment of the application;

[0042] Figure 2 An isolation effect simulation diagram of a thyristor based on a compatible temperature sensor provided by an embodiment of the application;

[0043] Figure 3 A temperature change diagram in a switching process of a thyristor based on a compatible temperature sensor provided by an embodiment of the application;

[0044] Figure 4 A diagram of the change relationship between the working voltage and the current of a terminal process compatible temperature sensor provided by an embodiment of the application over time;

[0045] Figure 5 A diagram of the relationship between the measured temperature and the actual temperature of a thyristor based on a terminal process compatible temperature sensor provided by an embodiment of the application;

[0046] Figures 6a-6c A simulation result diagram of forward conduction characteristic, switching characteristic and forward blocking characteristic simulation of a thyristor integrated with a compatible temperature sensor and a thyristor without integrated compatible sensor provided by the embodiment of the present application;

[0047] Figure 7 A step schematic diagram of a preparation method of a thyristor based on a compatible temperature sensor provided by the embodiment of the present application;

[0048] Figures 8a-8d A process schematic diagram of a thyristor based on a compatible temperature sensor provided by the embodiment of the present application.

[0049] Reference signs

[0050] 1-substrate, 2-buffer layer, 3-drift layer, 4-base region, 5-compatible sensor, 6-electrode array, 7-cathode, 8-terminal, 51-isolation region, 52-i region, 53-P region, 54-N region, 55-sensor anode, 56-sensor cathode, 57-isolation electrode, 61-anode layer, 62-anode, 63-gate electrode region, 64-gate electrode. DETAILED DESCRIPTION

[0051] The present application will be further described below in conjunction with specific embodiments, but the embodiments of the present application are not limited thereto.

[0052] In order to realize real-time monitoring of the temperature inside the thyristor without affecting the normal operation of the thyristor, the embodiment of the present application provides a thyristor based on a compatible temperature sensor and a preparation method thereof.

[0053] Next, first, a thyristor based on a compatible temperature sensor provided by the embodiment of the present application is introduced.

[0054] As shown in the drawings, Figure 1 A thyristor based on a compatible temperature sensor provided by the embodiment of the present application can include:

[0055] A substrate 1, a buffer layer 2, a drift layer 3, a base region 4, a compatible temperature sensor 5, a plurality of electrode arrays 6, a cathode 7 and a terminal 8; wherein,

[0056] The substrate 1, the buffer layer 2, the drift layer 3 and the base region 4 are sequentially arranged from bottom to top; the structure formed by the drift layer 3 and the base region 4 has two grooves, the depth of the grooves exceeds the thickness of the base region and does not exceed the thickness of the drift layer; the terminal 8 is arranged in the drift layer below the grooves;

[0057] The compatible temperature sensor 5 is arranged between the two grooves; the compatible temperature sensor 5 is a PiN temperature sensor which uses the terminal 8 as its own isolation region;

[0058] The electrode array 6 is symmetrically arranged on the base region 4 on both sides of the compatible sensor 5.

[0059] The cathode 7 is arranged on the lower surface of the substrate 1.

[0060] The embodiment of the application provides a thyristor based on a compatible temperature sensor, which can monitor temperature changes in the thyristor in real time. The thyristor integrated with the compatible temperature sensor can normally work, has high integration, and can realize process compatibility and reduce process steps by using a terminal of the thyristor as an isolation region.

[0061] Preferably, the material of the substrate 1 can include silicon carbide; the substrate 1 is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 .

[0062] Preferably, the material of the buffer layer 2 can include silicon carbide, and the thickness is 1-3 μm; the buffer layer 2 is P-type light doping, and the doping concentration is 1×10 17 -8×10 17 cm -3 .

[0063] It can be understood that the buffer layer can have the following functions in the thyristor:

[0064] Prevent overvoltage and overcurrent: during turn-on and turn-off of the thyristor, voltage spikes and overvoltage can be generated due to inductance in the circuit. The buffer layer can prevent the thyristor from being damaged due to overvoltage by absorbing the voltage spikes.

[0065] Reduce switching loss: the buffer layer can reduce the loss of the thyristor in the switching process by limiting the rate of change of current and the rate of change of voltage, thereby prolonging the service life of the thyristor.

[0066] Suppress transient overvoltage: when the thyristor is turned off, the power supply voltage can be suddenly added to the thyristor, generating transient overvoltage. The buffer layer can also suppress this transient overvoltage by means of a parallel RC network, to prevent the thyristor from being mis-triggered by flowing through excessive junction capacitance current.

[0067] Through the above functions, the buffer layer ensures the stability and reliability of the thyristor in the switching process, protects the equipment from being damaged, and improves the performance of the overall circuit.

[0068] Preferably, the material of the drift layer 3 can include silicon carbide, and the thickness is 20-40 μm; the drift layer 3 is P-type light doping, and the doping concentration is 1×10 15 -6×10 15 cm -3 .

[0069] It can be understood that the working principle of the drift layer is based on its lightly doped characteristics. Due to the low doping concentration, the number of carriers in the drift layer is small, resulting in poor conductivity and high resistance. This characteristic enables the drift layer to remain stable under high voltage and not be broken down due to excessive voltage.

[0070] Preferably, the material of the base region 4 can include silicon carbide with a thickness of 4-6 μm; the base region 4 is N-type lightly doped with a doping concentration of 1 x 10 17 -3 x 10 17 cm -3 .

[0071] It can be understood that the role of the base region in the thyristor can include:

[0072] Controlling the opening and closing of the thyristor: the base region plays a key role in the thyristor, and by controlling the current between the base region and the cathode, the opening and closing of the thyristor can be achieved. When a positive voltage is applied to the gate electrode, a current channel is formed between the base region and the cathode, thereby turning on the thyristor; conversely, when a negative voltage is applied, the channel is cut off and the thyristor is turned off.

[0073] Providing internal positive feedback: the thyristor contains two sub-transistors, a pnp transistor and an npn transistor. When a base current is applied to the npn transistor, it will draw an amplified current from the collector, which will provide a base current to the pnp transistor, forming an internal positive feedback loop. This positive feedback mechanism enables the thyristor to remain on after being turned on, even if the gate drive current is removed, the thyristor can still remain on.

[0074] Influencing the performance of the thyristor: the structure and parameters of the base region have a significant impact on the performance of the thyristor. For example, the doping concentration and thickness of the base region will affect the turn-on voltage and on-resistance of the thyristor. Higher doping concentration and thinner base region can reduce the turn-on voltage, but may increase the on-resistance; conversely, lower doping concentration and thicker base region will increase the turn-on voltage, but reduce the on-resistance.

[0075] Preferably, the compatible sensor 5 can include:

[0076] an isolation region 51, an i-region 52, a P-region 53, an N-region 54, a sensor anode 55, a sensor cathode 56, and an isolation electrode 57; wherein,

[0077] the isolation region 51 is composed of the terminal 8 and the part of the drift layer between the terminals 8;

[0078] the i-region 52 is composed of the part of the base region on the upper surface of the part of the drift layer between the terminals 8;

[0079] P region 53 is arranged at one end of the upper surface of i region 52;

[0080] N region 54 is arranged at the other end of the upper surface of i region 52;

[0081] Sensor anode 55 is arranged on the upper surface of P region 53;

[0082] Sensor cathode 56 is arranged on the upper surface of N region 54;

[0083] Isolation electrode 57 is arranged on the upper surface of terminal 8.

[0084] Preferably, the thickness of terminal 8 is 0.5-2 μm, and the width is 3-7 μm; terminal 8 is N-type doped, and the doping concentration is 1×10 18 -5×10 18 cm -3 .

[0085] In order to realize the normal work of the compatible sensor integrated in the thyristor, the PN junction isolation mode is used for isolation in the compatible sensor, that is, a positive voltage is biased at the isolation electrode of the sensor, and the isolation effect simulation diagram of the compatible sensor is shown in Figure 2 , and the terminal structure realizes the expected isolation effect, which can be observed from the electric field lines in the simulation. When the thyristor works, a constant current source needs to be biased to the PiN temperature sensor. When the working current is constant, the working voltage of the PiN temperature sensor is approximately linearly related to the temperature. The temperature inside the thyristor can be obtained through the voltage drop of the temperature sensor.

[0086] It can be understood that the thyristor based on the compatible temperature sensor provided by the embodiment of the application adopts a semiconductor device as a temperature sensor, and the temperature sensor made of the semiconductor device has the advantages of high linearity and sensitivity; the semiconductor temperature sensor is integrated in the thyristor, which improves the integration degree of the power device, and at the same time, the temperature change inside the thyristor can be monitored in real time.

[0087] Preferably, the electrode array 6 can include:

[0088] an anode layer 61, an anode 62, two gate electrode regions 63 and two gate electrodes 64; wherein,

[0089] The anode layer 61 is arranged on the upper surface of the base region 4;

[0090] The anode 62 is arranged on the upper surface of the anode layer 61;

[0091] The two gate electrode regions 63 are respectively arranged in the base region 4 on both sides of the anode layer 61;

[0092] The two gate electrodes 64 are respectively arranged on the upper surfaces of the corresponding gate electrode regions 63.

[0093] Optionally, four electrode arrays may be provided, wherein two electrode arrays are provided on one side of the compatible sensor 5 , and two electrode arrays are provided on the other side of the compatible sensor 5 .

[0094] In order to verify the feasibility and beneficial effects of the thyristor based on the compatible temperature sensor provided by the embodiment of the present invention, a switching circuit was constructed for simulation. By setting the material parameters and thermal resistance coefficient of silicon carbide, the temperature changes during the actual switching process of the thyristor and the working conditions of the integrated compatible temperature sensor were simulated. For the temperature change diagram during the switching process, please refer to Figure 3 As shown, from Figure 3 As can be seen from the figure, the temperature change of the thyristor mainly occurs during the shutdown process. The reason is that during the shutdown process, the thyristor needs to withstand a large voltage and current, so the temperature changes greatly. The working voltage of the compatible temperature sensor will also change during the shutdown process. For the relationship between the working voltage and current of the compatible temperature sensor over time, please refer to Figure 4 As shown, from Figure 4 It can be seen that when the working current of the compatible temperature sensor is constant, the voltage drop of the sensor will decrease as the temperature increases. The sensor voltage drop has a linear relationship with the temperature, so the corresponding temperature can be calculated from the sensor voltage drop.

[0095] For a diagram showing the relationship between the temperature measured by a compatible temperature sensor and the actual temperature of the thyristor, see Figure 5 ,from Figure 5 It can be seen that the error in comparing the temperature calculated by the compatible temperature sensor with the temperature inside the thyristor is small and does not exceed 2 Kelvin.

[0096] The forward conduction characteristics, switching characteristics and forward blocking characteristics of the thyristor with integrated compatible temperature sensor and the thyristor without integrated compatible sensor are simulated. The simulation results are as follows: Figure 6a 、 Figure 6b and Figure 6c For a comparison of the forward conduction characteristics of thyristors with integrated compatible temperature sensors and thyristors without integrated compatible temperature sensors, see Figure 6a , see the switching characteristics comparison chart of integrated compatible temperature sensor thyristor and non-integrated compatible temperature sensor thyristor. Figure 6b , see the comparison chart of forward blocking characteristics of thyristors with integrated compatible temperature sensors and thyristors without integrated compatible temperature sensors. Figure 6c ;from Figure 6a 、 Figure 6b and Figure 6c It can be seen from the simulation results in that the basic operating characteristics of the thyristor are not affected after the compatible temperature sensor is integrated.

[0097] In a second aspect, corresponding to the above-mentioned thyristor embodiment, the present application also provides a preparation method of the thyristor based on the compatible temperature sensor, as shown in the figure, the preparation method can comprise: Figure 7

[0098] S1, selecting a substrate 1, performing epitaxial growth and multi-layer ion implantation on the substrate 1 to obtain a buffer layer 2, a drift layer 3, a base region 4 and a silicon carbide P-type anode layer.

[0099] Specifically, in the preparation process, the doping type of the substrate 1 is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 After obtaining the substrate 1, first, a buffer layer 2 with a thickness of 1-3 μm, P-type light doping and a doping concentration of 1×10 17 -8×10 17 cm -3 is formed. Then, a drift layer 3 with a thickness of 20-40 μm, P-type light doping and a doping concentration of 1×10 15 -6×10 15 cm -3 is formed. Secondly, a base region 4 with a thickness of 4-6 μm, N-type light doping and a doping concentration of 1×10 17 -3×10 17 cm -3 is formed. Finally, a silicon carbide P-type anode layer with a thickness of 1-3 μm and a doping concentration of 1×10 18 -5×10 19 cm -3 is formed.

[0100] S2, etching the silicon carbide P-type anode layer using a preset photolithography mask to form two grooves and a sensor region between the two grooves.

[0101] The silicon carbide P-type anode layer is etched using a preset photolithography mask, and the etching depth is greater than the sum of the thickness of the silicon carbide P-type anode layer and the thickness of the base region 4, and less than the sum of the thickness of the silicon carbide P-type anode layer, the thickness of the base region 4 and the thickness of the drift layer 3, so that the bottom of the groove obtained by etching is located in the drift layer 3. Finally, two grooves and a sensor region are formed in the drift layer 3 and the base region 4, and the obtained device is as shown in the figure. Figure 8a

[0102] S3, re-etching the etched silicon carbide P-type anode layer to form a plurality of anode layers 61 on part of the base region on both sides of the sensor region, and forming a P region on part of the base region in the sensor region.

[0103] ​​Specifically, corresponding positions of the etched silicon carbide P-type anode layer are etched again to form a plurality of anode layers 61 and P regions 53, and the obtained device is as shown in Figure 8b

[0104] S4, the partial regions of the base regions on both sides of the anode layer 61, the partial regions of the bottom of the two grooves close to the sensor region, and the partial regions of the base regions in the sensor region away from the P region 53 are ion implanted to form a plurality of gate electrode regions 63, a terminal 8 and an N region 54, respectively.

[0105] Specifically, the partial regions of the base regions on both sides of the anode layer 61 are ion implanted to form a plurality of gate electrode regions 63, the partial regions of the bottom of the two grooves close to the sensor region are ion implanted to form a terminal 8, and the partial regions of the base regions in the sensor region away from the P region 53 are ion implanted to form an N region 54, and the obtained device is as shown in Figure 8c

[0106] S5, a gate electrode 64 is prepared on the upper surface of the gate electrode region 63, an anode 62 is prepared on the upper surface of the anode layer 61, a sensor anode 55 is prepared on the upper surface of the P region 53, a sensor cathode 56 is prepared on the upper surface of the N region 54, and an isolation electrode 57 is prepared on the upper surface of the terminal 8; the partial region of the drift layer between the terminal 8 and the terminal constitutes an isolation region 51, and the partial region of the base region on the upper surface of the partial region of the drift layer between the terminal constitutes an i region 52; the isolation region 51, the i region 52, the P region 53, the N region 54, the sensor anode 55, the sensor cathode 56 and the isolation electrode 57 constitute a compatible sensor 5; and the anode layer 61, the anode 62, the two gate electrode regions 63 and the two gate electrodes 64 constitute an electrode array 6.

[0107] It can be understood that the compatible sensor proposed in the embodiment of the present application can be formed at the same time as the photolithography of the thyristor, without additional ion implantation and other steps, and the doping concentration of the compatible sensor is consistent with that of the thyristor. The integrated compatible sensor is located between the two N-type terminals of the thyristor. The terminal of the thyristor is used as the isolation region of the temperature sensor, which realizes process compatibility and reduces process steps. The thyristor uses a semiconductor device as a temperature sensor, and the temperature sensor made of a semiconductor device has the advantages of high linearity and sensitivity; the semiconductor temperature sensor is integrated in the thyristor, which improves the integration of the power device, and at the same time, the temperature change in the thyristor can be monitored in real time.

[0108] ​​Specifically, in the process of preparing the gate electrode, the nickel metal is deposited on the upper surface of the gate electrode region 63 by using the magnetron sputtering method, and then heat annealing is performed under the first preset annealing condition to form a good N-type ohmic contact; wherein the first preset annealing condition can be selected and set as: the annealing temperature is 950 DEG C, and the annealing time is 15 minutes. In the process of preparing the anode, the aluminum metal is deposited on the upper surface of the anode layer 61 by using the magnetron sputtering method, and then heat annealing is performed under the second preset annealing condition to form a good P-type ohmic contact; wherein the second preset annealing condition can be selected and set as: the annealing temperature is 1000 DEG C, and the annealing time is 2 minutes.

[0109] S6, a cathode 7 is prepared on the lower surface of the substrate 1.

[0110] In the process of preparing the cathode, the nickel metal is deposited on the lower surface of the substrate 1 by using the magnetron sputtering method, and then heat annealing is performed under the third preset annealing condition to form a good N-type ohmic contact; wherein the third preset annealing condition can be selected and set as: the annealing temperature is 950 DEG C, and the annealing time is 15 minutes. It can be understood that the preparation methods of the corresponding sensor anode, sensor cathode and isolation electrode in the compatible sensor are similar to the preparation methods of the above electrodes, and will not be described in detail here. After step S6 is executed, the final thyristor is obtained, as shown in the figure. Figure 8d

[0111] The compatible temperature sensor-based thyristor provided by the embodiment of the present application adopts a semiconductor device as the compatible temperature sensor, and the compatible temperature sensor made of the semiconductor device has the advantages of high linearity and sensitivity; the compatible temperature sensor is integrated in the thyristor, thereby improving the integration degree of the power device, and the combination of the compatible temperature sensor and the thyristor makes the thyristor temperature measurement system more compact and efficient. At the same time, the technology can realize real-time temperature monitoring of the internal thyristor, thereby ensuring the accuracy and real-time performance of the measurement results, and providing a strong guarantee for the stable operation of the thyristor power electronic system. More importantly, after the compatible temperature sensor is integrated, the basic working characteristics of the thyristor are not affected, and the excellent performance and reliability are still maintained. Moreover, the process compatibility is realized by using the thyristor terminal as the isolation region, thereby saving the process steps.

[0112] It should be noted that in the description of the present application, it should be understood that the terms "first" and "second" are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0113] ​The above merely provides the preferred embodiments of the application, and not intended to limit the protection scope of the application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the application shall fall within the protection scope of the application.

Claims

1. A thyristor based on a compatible temperature sensor, characterized in that, The application relates to a compatible temperature sensor, which comprises a substrate (1), a buffer layer (2), a drift layer (3), a base region (4), a compatible temperature sensor (5), a plurality of electrode arrays (6), a cathode (7) and a terminal (8); wherein the substrate (1), the buffer layer (2), the drift layer (3) and the base region (4) are sequentially arranged from bottom to top; the drift layer (3) and the base region (4) have two grooves in the structure, the depth of the grooves exceeds the thickness of the base region and does not exceed the thickness of the drift layer; the terminal (8) is arranged in the drift layer below the grooves; the compatible temperature sensor (5) is arranged between the two grooves; the compatible temperature sensor (5) is a PiN temperature sensor which uses the terminal (8) as an isolation region of the temperature sensor; the compatible temperature sensor (5) comprises an isolation region (51), an i region (52), a P region (53) and an N region (54); the isolation region (51) is formed by a partial region of the drift layer between the terminal (8) and the terminal (8); the i region (52) is formed by a partial region of the base region on the upper surface of a partial region of the drift layer between the terminal (8); the P region (53) is arranged on the upper surface of one end of the i region (52); the N region (54) is arranged in the top region of the other end of the i region (52); the electrode arrays (6) are symmetrically arranged on the base region (4) on both sides of the compatible temperature sensor (5); and the cathode (7) is arranged on the lower surface of the substrate (1). The compatible temperature sensor (5) further comprises a sensor anode (55), a sensor cathode (56) and an isolation electrode (57); wherein the sensor anode (55) is arranged on the upper surface of the P region (53); the sensor cathode (56) is arranged on the upper surface of the N region (54); and the isolation electrode (57) is arranged on the upper surface of the terminal (8). The electrode array (6) comprises an anode layer (61), an anode (62), two gate electrode regions (63) and two gate electrodes (64); wherein the anode layer (61) is arranged on the upper surface of the base region (4); the anode (62) is arranged on the upper surface of the anode layer (61); the two gate electrode regions (63) are respectively arranged in the base region (4) on both sides of the anode layer (61); and the two gate electrodes (64) are respectively arranged on the upper surfaces of the corresponding gate electrode regions (63). The application further relates to a method for manufacturing the compatible temperature sensor, which comprises the following steps: selecting a substrate (1), performing epitaxial growth and multi-layer ion implantation on the substrate (1) to obtain a buffer layer (2), a drift layer (3), a base region (4) and a silicon carbide P-type anode layer; using a preset photolithography mask to etch the silicon carbide P-type anode layer into the drift layer (3) to form two grooves and a sensor region between the two grooves; and performing re-etching on the etched silicon carbide P-type anode layer to form a plurality of anode layers (61) on partial regions of the base region on both sides of the sensor region and to form a P region (53) on a partial region of the base region in the sensor region. The application further relates to a compatible temperature sensor, which comprises a substrate (1), a buffer layer (2), a drift layer (3), a base region (4), a compatible temperature sensor (5), a plurality of electrode arrays (6), a cathode (7) and a terminal (8); wherein the substrate (1), the buffer layer (2), the drift layer (3) and the base region (4) are sequentially arranged from bottom to top; the drift layer (3) and the base region (4) have two grooves in the structure, the depth of the grooves exceeds the thickness of the base region and does not exceed the thickness of the drift layer; the terminal (8) is arranged in the drift layer below the grooves; the compatible temperature sensor (5) is arranged between the two grooves; the compatible temperature sensor (5) is a PiN temperature sensor which uses the terminal (8) as an isolation region of the temperature sensor; the compatible temperature sensor (5) comprises an isolation region (51), an i region (52), a P region (53) and an N region (54); the isolation region (51) is formed by a partial region of the drift layer between the terminal (8) and the terminal (8); the i region (52) is formed by a partial region of the base region on the upper surface of a partial region of the drift layer between the terminal (8); the P region (53) is arranged on the upper surface of one end of the i region (52); the N region (54) is arranged in the top region of the other end of the i region (52); the electrode arrays (6) are symmetrically arranged on the base region (4) on both sides of the compatible temperature sensor (5); and the cathode (7) is arranged on the lower surface of the substrate (1). The compatible temperature sensor (5) further comprises a sensor anode (55), a sensor cathode (56) and an isolation electrode (57); wherein the sensor anode (55) is arranged on the upper surface of the P region (53); the sensor cathode (56) is arranged on the upper surface of the N region (54); and the isolation electrode (57) is arranged on the upper surface of the terminal (8).

2. A thyristor based on a compatible temperature sensor according to claim 1, characterized in that, The material of the substrate (1) comprises silicon carbide; the doping type of the substrate (1) is N-type heavy doping, the doping concentration is 1 x 10 18 -5 x 10 19 cm -3 .

3. A thyristor based on a compatible temperature sensor according to claim 1, characterized in that, The material of the buffer layer (2) includes silicon carbide with a thickness of 1-3 μm. The buffer layer (2) is P-type lightly doped with a doping concentration of 1 x 10 17 -8 x 10 17 cm -3 .

4. A temperature sensor compatible thyristor according to claim 1, wherein The material of the drift layer (3) comprises silicon carbide with a thickness of 20-40 μm. The drift layer (3) is P-type lightly doped with a doping concentration of 1 x 10 15 -6 x 10 15 cm -3 .

5. A temperature sensor compatible thyristor according to claim 1, wherein The material of the base region (4) comprises silicon carbide with a thickness of 4-6 μm. The base region (4) is N-type lightly doped with a doping concentration of 1 x 1016 cm-3. 17 - 3 x 1018 cm-3. 17 cm -3 .

6. A temperature sensor compatible thyristor according to claim 1, wherein The electrode array (6) comprises an anode layer (61), an anode (62), two gate electrode regions (63) and two gate electrodes (64); wherein the anode layer (61) is arranged on the upper surface of the base region (4); the anode (62) is arranged on the upper surface of the anode layer (61); the two gate electrode regions (63) are respectively arranged in the base region (4) on both sides of the anode layer (61); and the two gate electrodes (64) are respectively arranged on the upper surfaces of the corresponding gate electrode regions (63). The application further relates to a method for manufacturing the compatible temperature sensor, which comprises the following steps: selecting a substrate (1), performing epitaxial growth and multi-layer ion implantation on the substrate (1) to obtain a buffer layer (2), a drift layer (3), a base region (4) and a silicon carbide P-type anode layer; using a preset photolithography mask to etch the silicon carbide P-type anode layer into the drift layer (3) to form two grooves and a sensor region between the two grooves; and performing re-etching on the etched silicon carbide P-type anode layer to form a plurality of anode layers (61) on partial regions of the base region on both sides of the sensor region and to form a P region (53) on a partial region of the base region in the sensor region. ​ ​ ​ 7. A temperature sensor compatible thyristor according to claim 1, wherein ​ ​ ​ ​ ​ ​ 8. A temperature sensor compatible thyristor according to claim 1, wherein, The terminal (8) has a thickness of 0.5-2 μm and a width of 3-7 μm; the terminal (8) is N-type doped with a doping concentration of 1 x 1018-5 x 1019 cm-3. 18 -5 x 1019 18 cm-3. -3 .

9. A method of manufacturing a thyristor based on a compatible temperature sensor, characterized in that, ​ ​ ​ ​ Part of the base region on both sides of the anode layer (61), part of the bottom of the two grooves near the sensor region and part of the base region in the sensor region away from the P region (53) are ion implanted to form a plurality of gate electrode regions (63), a terminal (8) and an N region (54) respectively; A gate electrode (64) is prepared on the upper surface of the gate electrode region (63), an anode (62) is prepared on the upper surface of the anode layer (61), a sensor anode (55) is prepared on the upper surface of the P region (53), a sensor cathode (56) is prepared on the upper surface of the N region (54), and an isolation electrode (57) is prepared on the upper surface of the terminal (8); the terminal (8) and the terminal (8) between the drift layer part region constitute an isolation region (51), and the base region part in the sensor region constitutes an i region (52); the isolation region (51), the i region (52), the P region (53), the N region (54), the sensor anode (55), the sensor cathode (56) and the isolation electrode (57) constitute a compatible sensor (5); the anode layer (61), the anode (62), the two gate electrode regions (63) on both sides of the anode layer (61) and the corresponding two gate electrodes (64) constitute an electrode array (6); A cathode (7) is prepared on the lower surface of the substrate (1).

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