Thyristor based on ion implantation type temperature sensor and preparation method thereof

Abstract

The invention discloses a thyristor based on an ion implantation type temperature sensor and a preparation method of the thyristor. In the thyristor, a substrate, a buffer layer, a drift layer and a base region are sequentially arranged from bottom to top; the PiN temperature sensor is arranged in the base region through ion implantation; the PiN temperature sensors are P-type doped and N-type doped transverse PiN temperature sensors with isolation regions; the gate electrodes are arranged at two ends of the base region; the anode layer is arranged on the upper surface of the base region and a region between the PiN temperature sensor and the gate electrode; the anode is arranged on the upper surface of the anode layer; the cathode is arranged on the lower surface of the substrate. According to the invention, a semiconductor device is used as a temperature sensor, which has the advantages of high linearity and sensitivity; the temperature sensor is integrated in the thyristor, the integration level of the thyristor is greatly improved, and the temperature sensor and the thyristor are combined, so that the temperature measurement system of the thyristor is more compact and efficient.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a thyristor based on an ion implantation type temperature sensor and a preparation method thereof. Background Art

[0002] In the use of power devices such as thyristors, many temperature-related problems are often encountered. The increase in operating temperature will not only reduce the long-term working reliability of the device, but also in application scenarios such as short circuits, pulses and switches, high temperatures will cause thermal failure of the device, thereby causing irreversible damage to the system. Taking silicon carbide thyristors as an example, they need to withstand high current peaks in pulse switching systems. High currents may cause the anode metal to melt or the device leakage current to slowly increase under repeated discharge thermoelectric stress, leading to device failure, reducing the reliability of the pulse power system.

[0003] At present, in order to monitor the temperature change of thyristors, an external temperature measurement circuit or the shell temperature of the thyristor is generally used. The external temperature measurement circuit generally collects the characteristic parameters of the thyristor when it is working, and calculates the junction temperature by establishing a thermal resistance model in the data calculation module.

[0004] The existing monitoring system for thyristor temperature changes has the disadvantages of being unable to monitor the internal junction temperature changes of the thyristor in real time, inaccurately measuring the temperature, affecting the operation of the thyristor, occupying a large area, and having a low integration level. Summary of the invention

[0005] In order to solve the above problems existing in the prior art, the present invention provides a thyristor based on an ion implantation temperature sensor and a preparation method thereof. The technical problem to be solved by the present invention is achieved by the following technical solutions:

[0006] In a first aspect, the present invention provides a thyristor based on an ion implantation type temperature sensor, comprising:

[0007] substrate, buffer layer, drift layer, base region, PiN temperature sensor, gate electrode, anode layer, anode and cathode; wherein,

[0008] The substrate, the buffer layer, the drift layer and the base region are arranged in sequence from bottom to top;

[0009] The PiN temperature sensor is disposed in the base region by ion implantation; the PiN temperature sensor is a lateral PiN temperature sensor having an isolation region;

[0010] The gate electrodes are arranged at two ends of the base region;

[0011] The anode layer is disposed on the upper surface of the base region, in a region between the PiN temperature sensor and the gate electrode;

[0012] The anode is disposed on the upper surface of the anode layer;

[0013] The cathode is arranged on the lower surface of the substrate.

[0014] In one embodiment of the present invention, the material of the substrate includes silicon carbide; the doping type of the substrate is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 .

[0015] In one embodiment of the present invention, the material of the buffer layer includes: silicon carbide with a thickness of 1-3 μm; the buffer layer is P-type lightly doped with a doping concentration of 2.2×10 17 -4×10 18 cm -3 .

[0016] In one embodiment of the present invention, the material of the drift layer includes: silicon carbide with a thickness of 20-40 μm; the drift layer is P-type lightly doped with a doping concentration of 1×10 15 -5×10 15 cm -3 .

[0017] In one embodiment of the present invention, the material of the base region includes: silicon carbide with a thickness of 4-6 μm; the base region is N-type lightly doped with a doping concentration of 1×10 17 -3×10 17 cm -3 .

[0018] In one embodiment of the present invention, the PiN temperature sensor comprises:

[0019] P-type isolation region, N-type i region, P region, N region, sensor anode, sensor cathode and isolation electrode; wherein,

[0020] The P-type isolation region is formed by ion implantation and has a concave shape;

[0021] The N-type i region is formed by ion implantation and is disposed in the groove of the P-type isolation region;

[0022] The P region is disposed in the N-type i region near one end of the P-type isolation region;

[0023] The N region is disposed in the N-type i region near the other end of the P-type isolation region;

[0024] The sensor anode is arranged on the upper surface of the P region;

[0025] The sensor cathode is disposed on the upper surface of the N region;

[0026] The isolation electrodes are arranged at two ends of the P-type isolation region.

[0027] In one embodiment of the present invention, the concentration distribution of the P-type isolation region is Gaussian distribution, and the peak concentration range is 5◇10 18 cm -3 -2◇10 19 cm -3 , the implantation depth is 0.5-2μm.

[0028] In one embodiment of the present invention, the concentration distribution of the N-type i region is Gaussian distribution, and the peak concentration range is 1◇10 18 cm -3 -5◇10 18 cm -3 , the implantation depth is 0.2-1μm.

[0029] In one embodiment of the present invention, the material of the anode layer includes: silicon carbide with a thickness of 1-3 μm; the anode layer is heavily doped with a doping concentration of 5×10 18 -1×10 20 cm -3 .

[0030] In a second aspect, the present invention provides a method for preparing a thyristor based on an ion implantation temperature sensor, the method comprising:

[0031] Selecting a substrate, performing epitaxial growth and multi-layer ion implantation on the substrate to obtain a buffer layer, a drift layer, a base region and a silicon carbide P-type anode layer;

[0032] Etching the silicon carbide P-type anode layer to form two anode layers in a partial area of ​​the upper surface of the base region;

[0033] Gate regions are formed at both ends of the base region by ion implantation; a P-type isolation region is formed by ion implantation in a partial region of the base region between the two anode layers; an N-type i region is formed by ion implantation in a partial region of the P-type isolation region; a P region and an N region are respectively formed in a partial region of the N-type i region near both ends of the P-type isolation region and corresponding ohmic contacts are formed; a sensor anode is prepared on the upper surface of the P region, a sensor cathode is prepared on the upper surface of the N region, and isolation electrodes are prepared at both ends of the P-type isolation region; the P-type isolation region, the N-type i region, the P region, the N-region sensor anode, the sensor cathode and the isolation electrode constitute a PiN temperature sensor;

[0034] Gate electrodes are arranged at two ends of the gate region, and the gate region and the gate electrode constitute a gate electrode;

[0035] preparing an anode on the upper surface of the anode layer;

[0036] A cathode is prepared on the lower surface of the substrate.

[0037] Beneficial effects of the present invention:

[0038] In the solution provided by the present invention, a semiconductor device is used as a temperature sensor, which has the advantages of high linearity and sensitivity; the temperature sensor is integrated into the interior of the thyristor, which greatly improves the integration of the thyristor, and the temperature sensor is combined with the thyristor, making the thyristor temperature measurement system more compact and efficient. At the same time, real-time temperature monitoring of the interior of the thyristor is achieved to ensure the accuracy and real-time nature of the measurement results, providing a strong guarantee for the stable operation of the thyristor power electronic system. More importantly, after the temperature sensor is integrated, the basic working characteristics of the thyristor are not affected, and the excellent performance and reliability are still maintained. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic diagram of the structure of a thyristor based on an ion implantation type temperature sensor provided in an embodiment of the present invention;

[0040] Figure 2 A schematic diagram of temperature changes during the switching process of a thyristor of an ion implantation temperature sensor provided by an embodiment of the present invention;

[0041] Figure 3 A graph showing the relationship between the operating voltage and current of the ion implantation temperature sensor provided by an embodiment of the present invention and changes over time;

[0042] Figure 4 A diagram showing the relationship between the temperature measured by the sensor and the actual temperature of the thyristor provided in an embodiment of the present invention;

[0043] Figure 5a-5c A simulation result diagram of the forward conduction characteristics, switching characteristics and forward blocking characteristics of the integrated temperature sensor thyristor and the non-integrated sensor thyristor provided in the embodiment of the present invention;

[0044] Figure 6 A schematic diagram of the steps of a method for preparing a thyristor based on an ion implantation type temperature sensor provided by an embodiment of the present invention;

[0045] Figure 7a-7d A schematic diagram of a process of producing a thyristor based on an ion implantation temperature sensor provided in an embodiment of the present invention.

[0046] Reference numerals

[0047] 1-substrate, 2-buffer layer, 3-drift layer, 4-base region, 5-PiN temperature sensor, 6-gate electrode, 7-anode layer, 8-anode, 9-cathode, 51-P-type isolation region, 52-N-type i region, 53-P region, 54-N region, 55-sensor anode, 56-sensor cathode, 57-isolation electrode, 61-gate region, 62-gate. DETAILED DESCRIPTION

[0048] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0049] In order to achieve the purpose of real-time monitoring of the internal temperature of a thyristor, an embodiment of the present invention provides a thyristor based on an ion implantation temperature sensor and a preparation method thereof.

[0050] Below, firstly, a thyristor based on an ion implantation type temperature sensor provided in an embodiment of the present invention is introduced.

[0051] like Figure 1 As shown, a thyristor based on an ion implantation type temperature sensor provided in an embodiment of the present invention may include:

[0052] The substrate 1, the buffer layer 2, the drift layer 3 and the base region 4 are arranged in sequence from bottom to top;

[0053] The PiN temperature sensor 5 is disposed in the base region 4 by ion implantation; the PiN temperature sensor 5 is a lateral PiN temperature sensor having an isolation region;

[0054] The gate electrodes 6 are arranged at both ends of the base region 4;

[0055] The anode layer 7 is disposed on the upper surface of the base region 4, in the region between the PiN temperature sensor 5 and the gate electrode 6;

[0056] The anode 8 is disposed on the upper surface of the anode layer 7;

[0057] The cathode 9 is disposed on the lower surface of the substrate 1 .

[0058] The thyristor based on the ion implantation temperature sensor provided in the embodiment of the present invention uses a semiconductor device as a temperature sensor, which has the advantages of high linearity and sensitivity; the temperature sensor is integrated into the interior of the thyristor, which greatly improves the integration of the thyristor, and the temperature sensor is combined with the thyristor, making the thyristor temperature measurement system more compact and efficient. At the same time, real-time temperature monitoring of the inside of the thyristor is achieved to ensure the accuracy and real-time nature of the measurement results, providing a strong guarantee for the stable operation of the thyristor power electronic system. More importantly, after the temperature sensor is integrated, the basic working characteristics of the thyristor are not affected, and the excellent performance and reliability are still maintained.

[0059] Preferably, the material of the substrate 1 may include silicon carbide; the doping type of the substrate 1 is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 .

[0060] Preferably, the material of the buffer layer 2 may include: silicon carbide with a thickness of 1-3 μm; the buffer layer 2 is P-type lightly doped with a doping concentration of 2.2×10 17 -4×10 18 cm -3 .

[0061] It can be understood that the functions of the buffer layer in the thyristor may include:

[0062] Prevent overvoltage and overcurrent: When the thyristor is turned on and off, voltage spikes and overvoltage will be generated due to the inductance in the circuit. The buffer layer absorbs these voltage spikes to prevent the thyristor from being damaged by overvoltage.

[0063] Reduce switching losses: The buffer layer reduces the loss of the thyristor during the switching process by limiting the rate of change of current and voltage, thereby extending its service life.

[0064] Suppressing transient overvoltage: When the thyristor is turned off, the power supply voltage will suddenly be added to the thyristor, generating a transient overvoltage. The buffer layer can also suppress this transient overvoltage through a parallel RC network to prevent the thyristor from being triggered by mistake due to excessive junction capacitance current flowing inside the thyristor.

[0065] Through these functions, the buffer layer ensures the stability and reliability of the thyristor during the switching process, protects the device from damage, and improves the performance of the overall circuit.

[0066] Preferably, the material of the drift layer 3 may include: silicon carbide with a thickness of 20-40 μm; the drift layer 3 is P-type lightly doped with a doping concentration of 1×10 15 -5×10 15 cm -3 .

[0067] It is understandable that the working principle of the drift layer is based on its lightly doped characteristics. Due to the low doping concentration, the number of carriers in the drift layer is small, resulting in poor conductivity and high resistance. This characteristic enables the drift layer to remain stable under high voltage and will not be broken down due to excessive voltage.

[0068] Preferably, the material of the base region 4 may include: silicon carbide with a thickness of 4-6 μm; the base region 4 is N-type lightly doped with a doping concentration of 1×10 17 -3×10 17 cm-3 .

[0069] It can be understood that the functions of the base region in a thyristor may include:

[0070] Controlling the opening and closing of the thyristor: The base region plays a key role in the thyristor. By controlling the current between the base region and the cathode, the thyristor can be opened and closed. When a positive voltage is applied to the gate electrode, a current channel is formed between the base region and the cathode, thereby turning on the thyristor; conversely, when a negative voltage is applied, the channel is cut off and the thyristor is turned off.

[0071] Providing internal positive feedback: The thyristor contains two sub-transistors, a pnp transistor and an npn transistor. When a base current is given to the npn transistor, it pulls an amplified current from the collector, which then provides the base current to the pnp transistor, forming an internal positive feedback loop. This positive feedback mechanism allows the thyristor to remain in the on state after being turned on, and even if the gate drive current is removed, the thyristor can still remain in the on state.

[0072] Influence on the performance of thyristors: The structure and parameters of the base region have an important influence on the performance of thyristors. For example, the doping concentration and thickness of the base region will affect the turn-on voltage and on-resistance of the thyristor. A higher doping concentration and a thinner base region can reduce the turn-on voltage, but may increase the on-resistance; conversely, a lower doping concentration and a thicker base region will increase the turn-on voltage but reduce the on-resistance.

[0073] It can be understood that the gate electrode 6 may include: a gate 62 and a gate region 61 ; wherein the gate region 61 is disposed at both ends of the base region 4 , and the gate 62 is disposed on the upper surface of the gate region 61 .

[0074] Preferably, the material of the anode layer 7 may include: silicon carbide with a thickness of 1-3 μm; the anode layer 7 is heavily doped with a P-type doping concentration of 5×10 18 -1×10 20 cm -3 .

[0075] Preferably, the PiN temperature sensor 5 may include:

[0076] P-type isolation region 51, N-type i region 52, P region 53, N region 54, sensor anode 55, sensor cathode 56 and isolation electrode 57; wherein,

[0077] The P-type isolation region 51 is formed by ion implantation and has a concave shape;

[0078] The N-type i region 52 is formed by ion implantation and is disposed in a groove of the P-type isolation region 51;

[0079] The P region 53 is disposed in the N-type i region 52 and close to one end of the P-type isolation region 51;

[0080] The N region 54 is disposed in the N-type i region 52 and is close to the other end of the P-type isolation region 51;

[0081] The sensor anode 55 is disposed on the upper surface of the P region 53;

[0082] The sensor cathode 56 is disposed on the upper surface of the N region 54;

[0083] The isolation electrodes 57 are disposed at two ends of the P-type isolation region 51 .

[0084] Preferably, the concentration distribution of the P-type isolation region 51 is Gaussian distribution, and the peak concentration range is 5◇10 18 cm -3 -2◇10 19 cm -3 , the implantation depth is 0.5-2μm.

[0085] Preferably, the concentration distribution of the N-type i region 52 is a Gaussian distribution, and the peak concentration range is 1◇10 18 cm -3 -5◇10 18 cm -3 , the implantation depth is 0.2-1μm.

[0086] It is understandable that in order to ensure that the temperature sensor inside the thyristor can work properly, it is necessary to inject the isolation area outside the lateral PiN temperature sensor and use PN junction isolation to isolate it, that is, bias a negative voltage at the isolation electrode of the sensor. When the thyristor is working, it is necessary to bias the lateral PiN temperature sensor with a constant current source. When the working current is constant, the working voltage of the PiN temperature sensor is approximately linear with the temperature. The temperature inside the thyristor can be obtained by the voltage drop of the temperature sensor.

[0087] It is understandable that the embodiment of the present invention uses a semiconductor device as a PiN temperature sensor, and the temperature sensor made of a semiconductor device has the advantages of high linearity and sensitivity. The choice of integrating the semiconductor temperature sensor inside the thyristor greatly improves the integration of the power device and can monitor the temperature change inside the thyristor in real time.

[0088] In order to verify the feasibility and beneficial effects of the thyristor based on the ion implantation temperature sensor provided in the embodiment of the present invention, a switching circuit was built for simulation. The temperature change during the actual switching process of the thyristor and the working condition of the integrated temperature sensor were simulated by setting the material parameters and thermal resistance coefficient of silicon carbide. The temperature change during the switching process is shown in FIG. Figure 2 As shown, from Figure 2It can be seen that the temperature change of the thyristor mainly occurs during the shutdown process. The reason is that during the shutdown process, the thyristor needs to withstand a large voltage and current, so the temperature changes greatly. The working voltage of the sensor will also change during the shutdown process. For the relationship between the working voltage and current of the sensor over time, please refer to Figure 3 ,from Figure 3 It can be seen that when the working current of the PiN temperature sensor is constant, the voltage drop of the sensor will decrease as the temperature increases, and the sensor voltage drop is linearly related to the temperature, so the corresponding temperature can be calculated from the sensor voltage drop.

[0089] For a diagram showing the relationship between the sensor measured temperature and the actual thyristor temperature, see Figure 4 ,from Figure 4 It can be seen that the error in comparing the temperature calculated by the sensor with the temperature inside the thyristor is small, not exceeding 2 Kelvin.

[0090] The forward conduction characteristics, switching characteristics and forward blocking characteristics of the integrated temperature sensor thyristor and the non-integrated sensor thyristor are simulated, and the simulation results are as follows: Figure 5a , Figure 5b and Figure 5c ; For a comparison of the forward conduction characteristics of thyristors with integrated temperature sensors and thyristors without integrated sensors, see Figure 5a , the switching characteristics of the thyristor with integrated temperature sensor and the thyristor without integrated sensor are compared, see Figure 5b , the forward blocking characteristics comparison of thyristors with integrated temperature sensors and thyristors without integrated sensors, see Figure 5c ;from Figure 5a , Figure 5b and Figure 5c It can be seen from the simulation results in that the basic working characteristics of the thyristor are not affected after the integrated temperature sensor.

[0091] In a second aspect, corresponding to the above thyristor embodiment, the embodiment of the present invention further provides a method for preparing a thyristor based on an ion implantation type temperature sensor, such as Figure 6 As shown, the preparation method may include:

[0092] S1, selecting a substrate 1, performing epitaxial growth and multi-layer ion implantation on the substrate 1, and obtaining a buffer layer 2, a drift layer 3, a base region 4 and a silicon carbide P-type anode layer.

[0093] Specifically, during the preparation process, the doping type of the substrate 1 is selected as N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3After obtaining the substrate 1, a P-type lightly doped substrate with a thickness of 1-3 μm and a doping concentration of 2.2×10 17 -4×10 18 cm -3 Then, a buffer layer 2 with a thickness of 20-40 μm and lightly doped P type with a doping concentration of 1×10 15 -5×10 15 cm -3 Next, a drift layer 3 with a thickness of 4-6 μm is formed, which is lightly doped with N type and a doping concentration of 1×10 17 -3×10 17 cm -3 Finally, a base region with a thickness of 1-3 μm and a doping concentration of 1×10 18 -5×10 19 cm -3 Silicon carbide P-type anode layer.

[0094] S2 , etching the silicon carbide P-type anode layer to form two anode layers 7 on a partial area of ​​the upper surface of the base region 4 .

[0095] Specifically, after the epitaxy is completed, etching is performed to form the anode region of the thyristor.

[0096] S3, a gate region 61 is formed at both ends of the base region 4 by ion implantation; a P-type isolation region 51 is formed by ion implantation in a partial region of the base region between the two anode layers; an N-type i region 52 is formed by ion implantation in a partial region of the P-type isolation region 51; a P region 53 and an N region 54 are formed in partial regions of the N-type i region 52 near both ends of the P-type isolation region 51 and corresponding ohmic contacts are formed; a sensor anode 55 is prepared on the upper surface of the P region 53, a sensor cathode 56 is prepared on the upper surface of the N region 54, and isolation electrodes 57 are prepared at both ends of the P-type isolation region 51; the P-type isolation region 51, the N-type i region 52, the P region 53, the N region 54 sensor anode 55, the sensor cathode 56 and the isolation electrode 57 constitute a PiN temperature sensor 5.

[0097] Specifically, two gate regions 61 are formed on the upper surfaces of both ends of the base region 4 by ion implantation; a P-type isolation region 51 is formed in a part of the base region between the two anode layers by ion implantation, the implantation depth of the P-type isolation region 51 is 0.5-2 μm, the concentration distribution is Gaussian distribution, and the peak concentration range is 5◇10 18 cm -3 -2◇10 19 cm -3 The structure diagram of the obtained device is as follows Figure 7aIon implantation is performed in a part of the P-type isolation region 51 to form an N-type i region 52. The implantation depth of the N-type i region 52 is 0.2-1 μm, the concentration distribution is a Gaussian distribution, and the peak concentration range is 1◇10 18 cm -3 -5◇10 18 cm -3 The structure diagram of the obtained device is as follows Figure 7b A P region 53 and a corresponding ohmic contact are formed in a partial area of ​​the N-type i region 52 near one end of the P-type isolation region 51, and an N region 54 and a corresponding ohmic contact are formed in a partial area of ​​the N-type i region 52 near the other end of the P-type isolation region 51. The structure of the obtained device is shown in FIG. Figure 7c As shown. A sensor anode 55 is prepared on the upper surface of the P region 53, a sensor cathode 56 is prepared on the upper surface of the N region 54, and isolation electrodes 57 are prepared at both ends of the P-type isolation region 51; it can be understood that the preparation method of the sensor anode 55, the sensor cathode 56 and the isolation electrode 57 is the same as the preparation method of the gate 62, the anode 8 and the cathode 9, and the specific steps are described below. The P-type isolation region 51, the N-type i region 52, the P region 53, the N region 54 sensor anode 55, the sensor cathode 56 and the isolation electrode 57 constitute the PiN temperature sensor 5. The above preparation process realizes the integration of the PIN temperature sensor inside the thyristor.

[0098] S4 , gates 62 are provided at both ends of the gate region 61 , and the gate region 61 and the gate 62 constitute the gate electrode 6 .

[0099] Specifically, in the process of setting the gate electrode 6, ion implantation is performed on both ends of the base region 4 to form a gate region 61; nickel metal is deposited on the upper surface of the gate region 61 by magnetron sputtering, and then thermal annealing is performed under the first preset annealing condition to form a good N-type ohmic contact, thereby obtaining a gate 62. The gate 62 and the gate region 61 constitute the gate electrode 6; wherein the first preset annealing condition can be selected to be set as: annealing temperature 950°C annealing time 15 minutes.

[0100] S5 , preparing an anode 8 on the upper surface of the anode layer 7 .

[0101] During the anode setting process, aluminum metal is deposited on the P-type anode area by magnetron sputtering, and then thermal annealing is performed under a second preset annealing condition to form a good P-type ohmic contact; wherein the second preset annealing condition can be selected to be set to: annealing temperature 1000°C annealing time 2 minutes.

[0102] S6 , preparing a cathode 9 on the lower surface of the substrate 1 .

[0103] In the process of setting the cathode, nickel metal is deposited on the lower surface of the substrate 1 by magnetron sputtering, and then thermal annealing is performed under the third preset annealing condition to form a good N-type ohmic contact; wherein the third preset annealing condition can be selected to be set to: annealing temperature 950°C annealing time 15 minutes.

[0104] The thyristor based on the ion implantation temperature sensor provided in the embodiment of the present invention uses a semiconductor device as a temperature sensor, which has the advantages of high linearity and sensitivity; the temperature sensor is integrated into the interior of the thyristor, which greatly improves the integration of the thyristor, and the temperature sensor is combined with the thyristor, making the thyristor temperature measurement system more compact and efficient. At the same time, real-time temperature monitoring of the inside of the thyristor is achieved to ensure the accuracy and real-time nature of the measurement results, providing a strong guarantee for the stable operation of the thyristor power electronic system. More importantly, after the temperature sensor is integrated, the basic working characteristics of the thyristor are not affected, and the excellent performance and reliability are still maintained.

[0105] It should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A thyristor based on an ion implantation temperature sensor, characterized in that: include: A substrate (1), a buffer layer (2), a drift layer (3), a base region (4), a PiN temperature sensor (5), a gate electrode (6), an anode layer (7), an anode (8) and a cathode (9); wherein: The substrate (1), the buffer layer (2), the drift layer (3) and the base region (4) are arranged in sequence from bottom to top; The PiN temperature sensor (5) is arranged in the base region (4) by ion implantation; the PiN temperature sensor (5) is a lateral PiN temperature sensor having an isolation region; The gate electrode (6) is arranged at two ends of the base region (4); The anode layer (7) is arranged on the upper surface of the base region (4), in a region between the PiN temperature sensor (5) and the gate electrode (6); The anode (8) is arranged on the upper surface of the anode layer (7); The cathode (9) is arranged on the lower surface of the substrate (1).

2. A thyristor based on an ion implantation temperature sensor according to claim 1, characterized in that: The material of the substrate (1) includes silicon carbide; the doping type of the substrate (1) is N-type heavy doping, and the doping concentration is 1×10 18 -5×10 19 cm -3 .

3. The thyristor based on ion implantation temperature sensor according to claim 1, characterized in that: The material of the buffer layer (2) includes: silicon carbide with a thickness of 1-3 μm; the buffer layer (2) is P-type lightly doped with a doping concentration of 2.2×10 17 -4×10 18 cm -3 .

4. The thyristor based on ion implantation temperature sensor according to claim 1, characterized in that: The material of the drift layer (3) includes: silicon carbide with a thickness of 20-40 μm; the drift layer (3) is P-type lightly doped with a doping concentration of 1×10 15 -5×10 15 cm -3 .

5. The thyristor based on ion implantation temperature sensor according to claim 1, characterized in that: The material of the base region (4) includes: silicon carbide with a thickness of 4-6 μm; the base region (4) is N-type lightly doped with a doping concentration of 1×10 17 -3×10 17 cm -3 .

6. The thyristor based on ion implantation temperature sensor according to claim 1, characterized in that: The PiN temperature sensor (5) comprises: P-type isolation region (51), N-type i region (52), P region (53), N region (54), sensor anode (55), sensor cathode (56) and isolation electrode (57); wherein, The P-type isolation region (51) is formed by ion implantation and has a concave shape; The N-type i region (52) is formed by ion implantation and is arranged in a groove of the P-type isolation region (51); The P region (53) is arranged in a position in the N-type i region (52) close to one end of the P-type isolation region (51); The N region (54) is arranged in the N-type i region (52) at a position close to the other end of the P-type isolation region (51); The sensor anode (55) is arranged on the upper surface of the P region (53); The sensor cathode (56) is disposed on the upper surface of the N region (54); The isolation electrodes (57) are arranged at two ends of the P-type isolation region (51).

7. The thyristor based on ion implantation temperature sensor according to claim 6, characterized in that: The concentration distribution of the P-type isolation region (51) is a Gaussian distribution, and the peak concentration range is The implantation depth is 0.5-2 μm.

8. The thyristor based on ion implantation temperature sensor according to claim 6, characterized in that: The concentration distribution of the N-type i region (52) is a Gaussian distribution, and the peak concentration range is The implantation depth is 0.2-1 μm.

9. The thyristor based on ion implantation temperature sensor according to claim 1, characterized in that: The material of the anode layer (7) includes: silicon carbide with a thickness of 1-3 μm; the anode layer (7) is P-type heavily doped with a doping concentration of 5×10 18 -1×10 20 cm -3 .

10. A method for preparing a thyristor based on an ion implantation temperature sensor, characterized in that: include: Selecting a substrate (1), performing epitaxial growth and multi-layer ion implantation on the substrate (1), and obtaining a buffer layer (2), a drift layer (3), a base region (4), and a silicon carbide P-type anode layer; Etching the silicon carbide P-type anode layer to form two anode layers (7) in a partial area of ​​the upper surface of the base region (4); A gate region (61) is formed at both ends of the base region (4) by ion implantation; a P-type isolation region (51) is formed by ion implantation in a partial region of the base region between two anode layers; an N-type i region (52) is formed by ion implantation in a partial region of the P-type isolation region (51); a P region (53) and an N region (54) are formed in partial regions of the N-type i region (52) close to both ends of the P-type isolation region (51) and corresponding ohmic contacts are formed; a sensor anode (55) is prepared on the upper surface of the P region (53), a sensor cathode (56) is prepared on the upper surface of the N region (54), and isolation electrodes (57) are prepared at both ends of the P-type isolation region (51); the P-type isolation region (51), the N-type i region (52), the P region (53), the N region (54), the sensor anode (55), the sensor cathode (56) and the isolation electrode (57) constitute a PiN temperature sensor (5); Gate electrodes (62) are arranged at both ends of the gate region (61), and the gate region (61) and the gate electrode (62) constitute a gate electrode (6); Preparing an anode (8) on the upper surface of the anode layer (7); A cathode (9) is prepared on the lower surface of the substrate (1).

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