Manufacturing method of integrated LED chip and integrated LED chip

Abstract

The invention discloses a manufacturing method of an integrated LED chip and the integrated LED chip. The manufacturing method comprises the following steps: evaporating a transparent conductive layer on the upper surface of an LED epitaxial wafer; performing etching treatment on one surface of the transparent conductive layer to obtain a plurality of light-emitting units, an isolation groove and a negative electrode platform; evaporating a positive electrode bonding pad on the light-emitting unit, and evaporating a negative electrode bonding pad on the negative electrode platform; evaporating a passivation layer on one surface of the transparent conductive layer; etching the passivation layer covering the isolation groove and the negative electrode platform to obtain a negative electrode groove; and evaporating negative electrode conductive metal in the negative electrode groove to obtain a negative electrode. The integrated LED chip obtained through the manufacturing method is a whole module and is equivalent to a single chip and a circuit in the prior art, the structure is simpler, the technological process is fewer, a circuit board does not need to be additionally arranged, and the integrated LED chip can be directly attached to a radiator to be used.

Description

Technical Field

[0001] The invention belongs to the technical field of LED chips, and in particular relates to a manufacturing method of an integrated LED chip and the integrated LED chip. Background Art

[0002] Existing integrated LED chips need to be cut into individual chips / modules, and then transferred to the circuit board through binding, which has complex processes and structures; a circuit board with strong heat dissipation capacity is required at the bottom to be electrically connected to the upper chip / chip module. The circuit design of the circuit board is complex and the cost is high. Summary of the invention

[0003] In order to overcome the above technical defects, the present invention provides a method for manufacturing an integrated LED chip and an integrated LED chip, which can reduce costs.

[0004] In order to solve the above problems, the present invention is implemented according to the following technical solutions:

[0005] A method for manufacturing an integrated LED chip, comprising the steps of:

[0006] A transparent conductive layer is evaporated on the upper surface of the LED epitaxial wafer;

[0007] Performing etching on one side of the transparent conductive layer to obtain a plurality of light-emitting units, isolation grooves, and a cathode platform;

[0008] Evaporate the positive electrode pad on the light-emitting unit and evaporate the negative electrode pad on the negative electrode platform;

[0009] A passivation layer is evaporated on one side of the transparent conductive layer;

[0010] Etching the passivation layer covering the isolation groove and the negative electrode platform to obtain a negative electrode groove;

[0011] The negative electrode is obtained by evaporating a negative electrode conductive metal in the negative electrode groove.

[0012] As a further improvement of the present invention, the LED epitaxial wafer comprises:

[0013] The substrate, the negative emission layer, the multi-quantum well layer and the positive emission layer are bonded together from bottom to top.

[0014] As a further improvement of the present invention, the material of the transparent conductive layer is indium tin oxide.

[0015] As a further improvement of the present invention, a transparent conductive layer is evaporated on the surface of the positive electrode emission layer of the LED epitaxial wafer.

[0016] As a further improvement of the present invention, when etching the passivation layer covering the isolation groove and the negative electrode platform, the etching depth reaches the upper surface of the negative electrode emission layer.

[0017] As a further improvement of the present invention, the width of the isolation groove is 5-100 um.

[0018] As a further improvement of the present invention, the material of the positive electrode pad and the negative electrode pad includes at least one of Au, Pt, Cr, and Al.

[0019] As a further improvement of the present invention, the material of the passivation layer is SiO.

[0020] As a further improvement of the present invention, the material of the conductive metal includes at least one of Au, Pt, Cr, and Al.

[0021] In addition, the present invention also provides an integrated LED chip, which is manufactured by the above manufacturing method, and includes: a light-emitting unit, a bonded substrate, and a cathode emission layer;

[0022] The light-emitting units are arranged at intervals on the cathode emission layer, and the surfaces of the cathode emission layer and the light-emitting units are covered with a passivation layer;

[0023] The negative electrode emission layer is provided with a negative electrode pad exposed from the passivation layer;

[0024] The isolation groove adjacent to the light emitting unit is provided with a cathode connected to the cathode pad;

[0025] A positive electrode pad exposed from the passivation layer is disposed on the top of the light emitting unit;

[0026] The light-emitting unit includes a multi-quantum well layer, a positive electrode emission layer, and a transparent conductive layer arranged from bottom to top, wherein the multi-quantum well layer is attached to the negative electrode emission layer.

[0027] Compared with the prior art, the present invention has the following beneficial effects: the integrated LED chip obtained by the manufacturing method of the present invention is a complete module, which is equivalent to the "single chip + circuit" in the prior art, has a simpler structure, fewer process flows, does not require additional circuit boards, and can be directly attached to a heat sink for use. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The specific embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings, wherein:

[0029] Figure 1 This is a flow chart of the production method described in Example 1;

[0030] Figure 2This is a schematic diagram of the structure of the LED epitaxial wafer described in Example 1;

[0031] Figure 3 This is a schematic diagram of the structure obtained by step S1 in Example 1;

[0032] Figure 4 The front view of the structure obtained by step S2 in Example 1;

[0033] Figure 5 A top view of the structure obtained by step S2 in Example 1;

[0034] Figure 6 The front view of the structure obtained by step S3 in Example 1;

[0035] Figure 7 A top view of the structure obtained by step S3 in Example 1;

[0036] Figure 8 The front view of the structure obtained by step S4 in Example 1;

[0037] Fig. 9 A top view of the structure obtained by step S4 in Example 1;

[0038] Fig.10 The front view of the structure obtained by step S5 in Example 1;

[0039] Fig.11 A top view of the structure obtained by step S5 in Example 1;

[0040] Fig.12 The front view of the structure obtained by step S6 in Example 1;

[0041] Fig.13 This is a top view of the structure obtained through step S6 in Example 1.

[0042] Explanation of the reference numerals: 1. LED epitaxial wafer; 11. substrate; 12. cathode emission layer; 13. multi-quantum well layer; 14. cathode emission layer; 2. transparent conductive layer; 3. light-emitting unit; 4. isolation groove; 5. cathode platform; 6. cathode pad; 7. cathode pad; 8. cathode; 9. passivation layer; 10. cathode groove. DETAILED DESCRIPTION

[0043] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0044] Example 1

[0045] This embodiment provides a method for manufacturing an integrated LED chip. Figure 1 As shown, the steps include:

[0046] S1, evaporate a transparent conductive layer 2 on the upper surface of the LED epitaxial wafer 1; wherein the LED epitaxial wafer 1 includes: a substrate 11, a cathode emission layer 12, a multi-quantum well layer 13, and a cathode emission layer 14 bonded from bottom to top, such as Figure 2 That is, a transparent conductive layer 2 is deposited on the surface of the positive emission layer 14 of the LED epitaxial wafer 1; the material of the transparent conductive layer 2 is indium tin oxide, such as Figure 3 shown.

[0047] S2, etching is performed on one side of the transparent conductive layer 2 to obtain a plurality of light-emitting units 3, isolation grooves 4, and a cathode platform 5. Specifically, etching is performed to the cathode emission layer 12. The width of the isolation groove 4 is 5 to 100 um; Figure 4 and Figure 5 shown.

[0048] S3, evaporating the positive electrode pad 7 on the light-emitting unit 3, and evaporating the negative electrode pad 6 on the negative electrode platform 5; the material of the positive electrode pad 7 and the negative electrode pad 6 includes at least one of Au, Pt, Cr, and Al, such as Figure 6 and Figure 7 shown.

[0049] S4, vapor-depositing a passivation layer 9 on one side of the transparent conductive layer 2, the material of the passivation layer 9 is SiO, and the function of the passivation layer 9 is to achieve electrical isolation between the negative electrode 8 conductive metal and the multi-quantum well layer 13 and the positive electrode emission layer 14. At the same time, it is necessary to ensure that the positive electrode pad 7 is covered by the passivation layer 9. Figure 8 and Fig. 9 shown.

[0050] S5, etching the passivation layer 9 covering the isolation groove 4 and the negative electrode platform 5, etching to a depth of the upper surface of the negative electrode emission layer, exposing the negative electrode emission layer 12, and obtaining the negative electrode groove 10, such as Fig.10 and Fig.11 shown.

[0051] S6, vapor-depositing a conductive metal of the negative electrode 8 in the negative electrode groove 10 to obtain the negative electrode 8, the conductive metal material includes at least one of Au, Pt, Cr, and Al, and the conductive metal is used to enhance the current expansion of the negative electrode emission layer 12, such as Fig.12 and Fig.13 shown.

[0052] The integrated LED chip obtained by the manufacturing method of the present invention is a complete module, which is equivalent to the "single chip + circuit" in the prior art, has a simpler structure, fewer process flows, and does not require an additional circuit board.

[0053] Example 2

[0054] This embodiment provides an integrated LED chip, which is manufactured using the manufacturing method in Embodiment 1. The integrated LED chip finally obtained is as follows: Fig.12 and Fig.13 As shown, it includes: a substrate, a plurality of light-emitting units 3; the plurality of light-emitting units 3 are arranged in an array on the substrate; a cathode 8 is arranged in an isolation groove 4 formed by adjacent light-emitting units 3, and a cathode 8 is arranged at the edge of the substrate; a cathode pad 6 connected to the cathode 8 is arranged on the substrate; and a light-emitting unit 3 is arranged on the top of the light-emitting unit 3.

[0055] As one of the embodiments, the number of light-emitting units 3 is 6, which are arranged in a 3×2 array on the substrate, the negative electrode pad 6 is arranged on the left and right sides of the substrate, and is located on the left and right sides of the light-emitting unit 3, and the negative electrode 8 of the substrate is arranged on the upper and lower sides, and is located on the outside of the light-emitting unit 3.

[0056] Furthermore, the base includes: a substrate 11 and a cathode emission layer 12 arranged from bottom to top; and a plurality of light emitting units 3 are arranged on the cathode emission layer 12 .

[0057] The light-emitting unit 3 includes: the light-emitting unit 3 arranged from bottom to top includes a multi-quantum well layer 13, a positive electrode emission layer 14, and a transparent conductive layer 2 arranged from bottom to top, and the positive electrode pad 7 is arranged on the transparent conductive layer 2, wherein the multi-quantum well layer 13 is bonded to the negative electrode emission layer 12.

[0058] The surface of the light emitting unit 3 and the substrate is also covered with a passivation layer 9, and the positive electrode pad 7 and the negative electrode pad 6 are exposed on the passivation layer 9. The material of the passivation layer 9 is SiO, and the function of the passivation layer 9 is to realize the electrical isolation of the conductive metal of the negative electrode 8 and the multi-quantum well layer 13 and the positive emission layer 14.

[0059] The width of the isolation groove 4 is 5-100 um.

[0060] The positive electrode pad 7 and the negative electrode pad 6 are made of Au, Pt, Cr or Al.

[0061] The negative electrode 8 is covered with a layer of conductive metal. The material of the conductive metal includes at least one of Au, Pt, Cr, and Al. The conductive metal is used to enhance the current expansion of the negative electrode emission layer 12 .

[0062] For other specific implementations of this embodiment, please refer to Embodiment 1, which will not be described in detail here.

[0063] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Therefore, any modification, equivalent change and modification made to the above embodiment based on the technical essence of the present invention without departing from the technical solution of the present invention still fall within the scope of the technical solution of the present invention.

Claims

1. A method for manufacturing an integrated LED chip, characterized in that: Includes steps: A transparent conductive layer is evaporated on the upper surface of the LED epitaxial wafer; Performing etching on one side of the transparent conductive layer to obtain a plurality of light-emitting units, isolation grooves, and a cathode platform; Evaporate the positive electrode pad on the light-emitting unit and evaporate the negative electrode pad on the negative electrode platform; A passivation layer is evaporated on one side of the transparent conductive layer; Etching the passivation layer covering the isolation groove and the negative electrode platform to obtain a negative electrode groove; The negative electrode is obtained by evaporating a negative electrode conductive metal in the negative electrode groove.

2. The method according to claim 1, characterized in that: The LED epitaxial wafer comprises: The substrate, the negative emission layer, the multi-quantum well layer and the positive emission layer are bonded together from bottom to top.

3. The production method according to claim 1 or 2, characterized in that: The material of the transparent conductive layer is indium tin oxide.

4. The method according to claim 2, characterized in that: A transparent conductive layer is evaporated on the surface of the positive emission layer of the LED epitaxial wafer.

5. The manufacturing method according to claim 4, characterized in that: When etching the passivation layer covering the isolation groove and the negative electrode platform, the etching depth reaches the upper surface of the negative electrode emission layer.

6. The method according to claim 1, characterized in that: The width of the isolation groove is 5-100 um.

7. The manufacturing method according to claim 1, characterized in that: The material of the positive electrode pad and the negative electrode pad includes at least one of Au, Pt, Cr, and Al.

8. The manufacturing method according to claim 1, characterized in that: The material of the passivation layer is SiO.

9. The manufacturing method according to claim 1, characterized in that: The conductive metal is made of at least one of Au, Pt, Cr and Al.

10. An integrated LED chip, characterized in that: The method according to any one of claims 1 to 9 is used to manufacture the light emitting device, comprising: a substrate, a plurality of light emitting units; A plurality of the light emitting units are arranged in an array on the substrate; A cathode is disposed in the isolation groove formed by the adjacent light-emitting units, and a cathode is disposed at the edge of the substrate; The substrate is provided with a negative electrode pad connected to the negative electrode; A light emitting unit is arranged on the top of the light emitting unit.

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