Half-bridge power unit, full-bridge power unit, electronic equipment and vehicle

Abstract

The invention discloses a half-bridge power unit, a full-bridge power unit, electronic equipment and a vehicle, and relates to the technical field of semiconductors. The half-bridge power unit comprises an alternating-current output pole busbar, and the alternating-current output pole busbar is provided with a first surface; each half-bridge power subunit is arranged on the first surface side of the alternating current output pole busbar, and each half-bridge power subunit at least comprises a first semiconductor power device and a second semiconductor power device; a source power terminal and a drain power terminal of the first semiconductor power device are respectively arranged on the upper surface of the first semiconductor device, and a source power terminal and a drain power terminal of the second semiconductor power device are respectively arranged on the upper surface of the second semiconductor power device. Wherein the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are jointly connected to the first surface of the alternating current output electrode busbar. The half-bridge power unit can restrain electromagnetic interference generated by the alternating current output pole busbar.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more specifically, to a half-bridge power unit, a full-bridge power unit, an electronic device and a vehicle. Background Art

[0002] Power semiconductor devices are the core components of power electronic conversion devices. Power electronics rely on the opening and closing of power semiconductor devices under different circuit topologies to achieve power conversion. For example, the electric drive of electric vehicles usually uses a three-phase full-bridge module to achieve DC / AC voltage conversion, so that the DC power of the power battery can be used to drive the AC motor. At present, the AC output busbar in the three-phase full-bridge module is prone to generate electromagnetic interference (EMI) to the outside. Summary of the invention

[0003] An object of the present application is to provide a new half-bridge power unit, a full-bridge power unit, an electronic device and a vehicle.

[0004] According to a first aspect of the present application, a half-bridge power unit is provided, comprising:

[0005] An AC output pole busbar, wherein the AC output pole busbar has a first surface;

[0006] At least one half-bridge power subunit, each of the half-bridge power subunits is arranged on the first surface side of the AC output pole busbar, and each of the half-bridge power subunits at least includes a first semiconductor power device and a second semiconductor power device;

[0007] The source power terminal and the drain power terminal of the first semiconductor power device are respectively arranged on the upper surface of the first semiconductor device, and the source power terminal and the drain power terminal of the second semiconductor power device are respectively arranged on the upper surface of the second semiconductor power device, wherein:

[0008] The source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first surface of the AC output busbar.

[0009] Optionally, the first semiconductor power device and the second semiconductor power device are arranged side by side along a first direction, and the source power terminal of the first semiconductor power device is arranged adjacent to the drain power terminal of the second semiconductor power device; the first direction is the direction from the source power terminal of the first semiconductor power device to the drain power terminal.

[0010] Optionally, the half-bridge power unit further includes:

[0011] A DC positive busbar, to which the drain power terminal of the first semiconductor power device is electrically connected.

[0012] Optionally, the half-bridge power unit further includes:

[0013] The DC negative busbar, the source power terminal of the second semiconductor power device is electrically connected to the DC negative busbar.

[0014] Optionally, the AC output pole busbar has a second surface, and the first surface of the AC output pole busbar and the second surface of the AC output pole busbar are opposite surfaces of the AC output pole busbar;

[0015] The DC positive busbar and the DC negative busbar are both located on the second surface side of the AC output busbar.

[0016] Optionally, the DC positive busbar, the DC negative busbar and the AC output busbar are spaced apart and arranged in parallel in a second direction, the second direction is the direction in which the half-bridge power subunit points to the AC output busbar, and the second direction is perpendicular to the first direction.

[0017] Optionally, the DC positive busbar is located between the DC negative busbar and the AC output busbar.

[0018] Optionally, the DC negative busbar is located between the DC positive busbar and the AC output busbar.

[0019] Optionally, a first insulating layer is provided between the DC positive busbar and the DC negative busbar, and a second insulating layer is provided between the DC positive busbar and the AC output busbar.

[0020] Optionally, a third insulating layer is provided between the DC negative busbar and the DC positive busbar, and a fourth insulating layer is provided between the DC negative busbar and the AC output busbar.

[0021] Optionally, the AC output busbar leads out a first external terminal in a third direction, the third direction is perpendicular to the first direction and the second direction, and the first external terminal is used to connect an external load.

[0022] Optionally, the DC positive busbar leads out a second external terminal in a third direction.

[0023] Optionally, the DC negative busbar leads out a third external terminal in a third direction.

[0024] Optionally, the second external terminal and the third external terminal are arranged on a first side of the third direction.

[0025] Optionally, the first external terminal is arranged on the second side of the third direction.

[0026] Optionally, the half-bridge power unit includes a capacitor; wherein:

[0027] The first end of the capacitor is electrically connected to the first external terminal, and the second end of the capacitor is electrically connected to the second external terminal.

[0028] Optionally, the first semiconductor power device further includes a first driving terminal, and the first driving terminal is arranged on a side surface of the first semiconductor power device in a third direction;

[0029] The second semiconductor power device further includes a second driving terminal, and the second driving terminal is disposed on a side surface of the second semiconductor power device in a third direction.

[0030] Optionally, the first driving terminal of the first semiconductor power device includes a first gate driving terminal, and the first gate driving terminal extends along the second direction.

[0031] Optionally, the second driving terminal of the second semiconductor power device includes a second gate driving terminal, and the second gate driving terminal extends along the second direction.

[0032] Optionally, a first opening is provided on the DC positive busbar, the DC negative busbar and the AC output busbar, and a first gate drive terminal of the first semiconductor power device is led out through the first opening.

[0033] Optionally, the driving terminal of the first semiconductor power device further includes a first source driving terminal, the first source driving terminal is arranged adjacent to the first gate driving terminal, and the first source driving terminal is led out through the first opening.

[0034] Optionally, the DC positive busbar, the DC negative busbar and the AC output busbar are provided with second openings, and the second gate drive terminal 24 of the second semiconductor power device is led out through the second openings.

[0035] Optionally, the driving terminal of the second semiconductor power device further includes a second source driving terminal, the second source driving terminal is arranged adjacent to the second gate driving terminal, and the second source driving terminal is led out through the second opening.

[0036] Optionally, the half-bridge power unit further includes a driving board, and the first gate driving terminal and / or the first source driving terminal are led out from the first opening and electrically connected to the driving board.

[0037] Optionally, the half-bridge power unit further includes a driving board, and the second gate driving terminal and / or the second source driving terminal are led out from the second opening and electrically connected to the driving board.

[0038] Optionally, at least one of the DC positive busbar, the DC negative busbar and the AC output busbar covers the at least one half-bridge power subunit.

[0039] Optionally, the half-bridge power unit includes at least two half-bridge power sub-units, and the at least two half-bridge power sub-units are arranged side by side along a third direction, and the third direction is perpendicular to the first direction in the plane where the first surface of the AC output pole busbar is located.

[0040] Optionally, the semiconductor power device terminal and the busbar are electrically connected by laser welding.

[0041] According to a second aspect of the present application, a full-bridge power unit is provided, comprising at least two half-bridge power units as described in any one of the first aspects.

[0042] Optionally, at least two of the half-bridge power units are arranged side by side along the first direction.

[0043] Optionally, the full-bridge power unit further includes a driving plate, and the driving plate at least partially covers the half-bridge power unit.

[0044] Optionally, the full-bridge power unit includes three half-bridge power units, and the driving board is arranged to cover the three half-bridge driving units.

[0045] Optionally, the first semiconductor power device further includes a first gate driving terminal, and the first gate driving terminal is electrically connected to the driving board.

[0046] Optionally, the second semiconductor power device further includes a second gate drive terminal, and the second gate drive terminal is electrically connected to the drive board.

[0047] Optionally, the full-bridge power unit further includes a heat dissipation substrate, and the half-bridge power unit is arranged on the heat dissipation substrate.

[0048] Optionally, the first semiconductor power device includes a first heat-conducting layer located on the lower surface; the second semiconductor power device includes a second heat-conducting layer located on the lower surface;

[0049] The first heat-conducting layer and the second heat-conducting layer are welded or sintered to the heat-dissipating substrate.

[0050] Optionally, bosses corresponding to the first semiconductor power device and the second semiconductor power device are provided on the heat dissipation substrate;

[0051] The first heat-conducting layer and the second heat-conducting layer are respectively welded or sintered to corresponding bosses on the heat dissipation substrate.

[0052] According to a third aspect of the present application, an electronic device is provided, comprising a half-bridge power unit as described in any one of the first aspects, or comprising a full-bridge power unit as described in any one of the second aspects.

[0053] According to a fourth aspect of the present application, a vehicle is provided, the vehicle comprising the electronic device as described in the third aspect.

[0054] The embodiment of the present application provides a half-bridge power unit, including: an AC output pole busbar, the AC output pole busbar having a first surface; at least one half-bridge power sub-unit, each half-bridge power sub-unit is arranged on the first surface side of the AC output pole busbar, and each half-bridge power sub-unit includes at least a first semiconductor power device and a second semiconductor power device; the source power terminal and the drain power terminal of the first semiconductor power device are respectively arranged on the upper surface of the first semiconductor device, and the source power terminal and the drain power terminal of the second semiconductor power device are respectively arranged on the upper surface of the second semiconductor power device, wherein: the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first surface of the AC output pole busbar. In the embodiment of the present application, the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are connected to the first surface of the AC output pole busbar, so that the connection between the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device is externally led out by the AC output pole busbar. Since each half-bridge power sub-unit is arranged on the first surface side of the AC output pole busbar, other busbars of the half-bridge power unit, such as the DC positive busbar connected to the drain power terminal of the first semiconductor power device, and the DC negative busbar connected to the source power terminal of the second semiconductor power device, can form a shielding layer, thereby suppressing the electromagnetic interference generated by the AC output pole busbar. In addition, it is not necessary to set openings on other busbars for the AC output pole busbar to lead out the half-bridge midpoint formed by connecting the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device. This reduces the difficulty and complexity of processing the half-bridge power unit.

[0055] Other features and advantages of the present application will become apparent from the following detailed description of exemplary embodiments of the present application with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the application and, together with the description, serve to explain the principles of the application.

[0057] Figure 1 is a cross-sectional schematic diagram of a half-bridge power unit provided in an embodiment of the present application;

[0058] Figure 2a is a schematic structural diagram of a first semiconductor power device provided in an embodiment of the present application;

[0059] Figure 2b is a bottom view schematic diagram of a first semiconductor power device provided in an embodiment of the present application;

[0060] Figure 3a is a schematic diagram of an equivalent circuit of a half-bridge power subunit in a half-bridge power unit provided in an embodiment of the present application;

[0061] Figure 3b is a schematic diagram of an equivalent circuit of a half-bridge power unit provided in an embodiment of the present application;

[0062] Figure 4 This is a schematic diagram of a half-bridge power unit provided in an embodiment of the present application. Figure 1 ;

[0063] Figure 5 This is a second structural diagram of a half-bridge power unit provided in an embodiment of the present application;

[0064] Figure 6 It is a schematic diagram of an arrangement of a half-bridge power subunit provided in an embodiment of the present application;

[0065] Figure 7 Schematic diagram 3 of a half-bridge power unit provided in an embodiment of the present application;

[0066] Figure 8 This is a schematic diagram of the structure of a full-bridge power unit provided in an embodiment of the present application. Figure 1 ;

[0067] Fig. 9 It is a structural schematic diagram of a heat dissipation substrate provided in an embodiment of the present application;

[0068] Fig.10 This is a second structural diagram of a full-bridge power unit provided in an embodiment of the present application;

[0069] Fig.11 A schematic diagram of electric field line simulation of a full-bridge power unit provided in an embodiment of the present application;

[0070] Fig.12 A schematic diagram of temperature simulation of a full-bridge power unit provided in an embodiment of the present application.

[0071] Reference numerals:

[0072] 211-first semiconductor power device; 11-drain power terminal of the first semiconductor power device; 12-source power terminal of the first semiconductor power device; 13-first source drive terminal of the first semiconductor power device; 14-first gate drive terminal of the first semiconductor power device; 15-first heat conducting layer;

[0073] 212 - a second semiconductor power device; 21 - a drain power terminal of the second semiconductor power device; 22 - a source power terminal of the second semiconductor power device; 23 - a second source drive terminal of the second semiconductor power device; 24 - a second gate drive terminal of the second semiconductor power device;

[0074] 21-1-half-bridge power subunit 1; 21-2-half-bridge power subunit 2; 21-3-half-bridge power subunit 3; 21-4-half-bridge power subunit 4;

[0075] 31-DC positive busbar; 311-second external terminal;

[0076] 32-DC negative busbar; 321-second external terminal;

[0077] 33-AC output pole busbar; 331-first external terminal;

[0078] 1-capacitor; 4-first insulating layer; 5-second insulating layer; 6-heat dissipation substrate; 61-boss; 62-heat dissipation column;

[0079] 7-driving plate; 8-first opening; 9-second opening;

[0080] 51-U phase half-bridge power unit; 52-V phase half-bridge power unit; 53-W phase half-bridge power unit.

[0081] Description of the second figure

[0082] Fig.13 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0083] Fig.14 is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention;

[0084] Fig.15 is a connection diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention;

[0085] Fig.16 is a schematic diagram of a device layout of a plurality of semiconductor devices connected in parallel to a half-bridge according to an embodiment of the present invention;

[0086] Fig.17is a schematic layout diagram of four groups of semiconductor devices connected in parallel according to an embodiment of the present invention;

[0087] Fig.18 is a schematic diagram of a first semiconductor device according to an embodiment of the present invention;

[0088] Fig.19 is a schematic diagram of a second semiconductor device according to an embodiment of the present invention;

[0089] Fig. 20 is a schematic diagram of the layout of semiconductor devices in a half-bridge subunit according to an embodiment of the present invention;

[0090] Fig.21 is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0091] Fig. 22 It is a schematic diagram of magnetic field distribution in the half-bridge sub-unit inductance simulation of the prior art;

[0092] Fig.23 is a schematic diagram of magnetic field distribution in a half-bridge subunit inductor simulation according to an embodiment of the present invention;

[0093] Fig.24 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention;

[0094] Fig.25 is a schematic diagram of a heat conducting layer according to an embodiment of the present invention;

[0095] Fig.26 is a block diagram of a power semiconductor module according to an embodiment of the present invention;

[0096] Fig. 27 is a schematic diagram of the layout of a three-phase full-bridge power module according to an embodiment of the present invention;

[0097] Fig.28 is an overall schematic diagram of a three-phase full-bridge power module integration according to an embodiment of the present invention;

[0098] Fig.29 is a block diagram of an electronic device according to an embodiment of the present invention;

[0099] Fig.30 is a block diagram of a vehicle according to one embodiment of the present invention.

[0100] Reference numerals:

[0101] Vehicle 100;

[0102] Electronic equipment 1;

[0103] A power semiconductor module 10;

[0104] Power semiconductor device unit 11; U-phase half-bridge power unit 20; V-phase half-bridge power unit 30; W-phase half-bridge power unit 40; upper bridge structure 50; lower bridge structure 60; half-bridge sub-unit 70;

[0105] Busbar structure 21; semiconductor device 22; drive board 23; DC bus capacitor 24; heat dissipation substrate 25; load 26;

[0106] DC positive busbar 210; DC positive terminal 211; DC negative busbar 212; DC negative terminal 213; AC output busbar 214; AC terminal 215; third insulating layer 216; second insulating layer 217; first insulating layer 218; AC connection part 219; first semiconductor device 220; second semiconductor device 230; heat conducting layer 240; first through hole 250; second through hole 260;

[0107] a first drain terminal 221 , a first source terminal 222 , a driving terminal 223 , a driving source terminal 224 , a driving gate terminal 225 , a second drain terminal 231 , a second source terminal 232 , a substrate 251 , a boss 252 , and a heat dissipation column 253 .

[0108] Description of the third figure

[0109] Fig.31 is a schematic diagram of a device layout of a half-bridge power unit provided by an embodiment of the present invention;

[0110] Fig.32 This is a schematic diagram of an axonometric view of a single tube on an upper bridge provided by an embodiment of the present invention;

[0111] Fig.33 This is a second perspective axonometric diagram of an upper bridge single tube provided by an embodiment of the present invention;

[0112] Fig.34 It is a schematic diagram of the terminal structure of an upper bridge single tube and a lower bridge single tube in a half-bridge power unit provided by an embodiment of the present invention;

[0113] Fig.35 Schematic diagram of the circuit principle of a half-bridge power subunit in an embodiment of the present invention;

[0114] Fig.36 It is a schematic diagram of the distribution positions of the DC positive terminal, the DC negative terminal and the AC output terminal in the second half-bridge power unit provided by an embodiment of the present invention;

[0115] Fig.37 is a top view of the arrangement of the upper bridge single tube and the lower bridge single tube when they are arranged relatively in an embodiment of the present invention;

[0116] Fig.38This is an axonometric schematic diagram of an embodiment of the present invention in which an upper bridge single tube and a lower bridge single tube are arranged relative to each other;

[0117] Fig.39 is another axonometric schematic diagram of an embodiment of the present invention in which an upper bridge single tube and a lower bridge single tube are arranged relative to each other;

[0118] Fig.40 Embodiment of the present invention Fig.39 Schematic cross-sectional view of ;

[0119] Fig.41 is a top view of the arrangement of the upper bridge single tube and the lower bridge single tube when they are arranged in the same direction in an embodiment of the present invention;

[0120] Fig.42 This is an axonometric schematic diagram of an embodiment of the present invention in which the upper bridge single tube and the lower bridge single tube are arranged in the same direction;

[0121] Fig.43 Embodiment of the present invention Fig.42 Schematic cross-sectional view of ;

[0122] Fig.44 is another axonometric schematic diagram of an embodiment of the present invention in which the upper bridge single tube and the lower bridge single tube are arranged in the same direction;

[0123] Fig.45 Embodiment of the present invention Fig.44 Schematic cross-sectional view of ;

[0124] Fig.46 is a schematic diagram of a first half-bridge power unit composed of a plurality of half-bridge power sub-units according to an embodiment of the present invention;

[0125] Fig.47 is a schematic diagram of a second half-bridge power unit composed of a plurality of half-bridge power sub-units according to an embodiment of the present invention;

[0126] Fig.48 is a circuit schematic diagram of a plurality of half-bridge power sub-units connected in parallel according to an embodiment of the present invention;

[0127] Fig.49 Schematic diagram of a three-phase full-bridge power unit according to an embodiment of the present invention.

[0128] Description of reference numerals:

[0129] Half-bridge power unit-20, driving board-21, heat dissipation substrate-22, half-bridge power sub-unit-201, upper bridge single tube-2011, lower bridge single tube-2012, first busbar-202, second busbar-203, third busbar-204, fourth busbar-205, fifth busbar-206, sixth busbar-207, first source power terminal-S1, first drain power terminal-D1, first drive gate terminal-G1, first drive source terminal-DS1, second source power terminal-S2, second drain power terminal-D2, second drive gate terminal-G2, second drive source terminal-DS2, DC positive terminal-DC+, DC negative terminal-DC-, AC output terminal-AC_out.

[0130] Description of the fourth figure

[0131] Fig.50 is a cross-sectional schematic diagram of a half-bridge power unit provided in an embodiment of the present application;

[0132] Fig.51a is a schematic structural diagram of a semiconductor power device provided in an embodiment of the present application;

[0133] Fig.51b is a bottom view schematic diagram of a semiconductor power device provided in an embodiment of the present application;

[0134] Fig.52a is a schematic diagram of an equivalent circuit of a half-bridge power subunit in a half-bridge power unit provided in an embodiment of the present application;

[0135] Fig.52b is a schematic diagram of an equivalent circuit of a half-bridge power unit provided in an embodiment of the present application;

[0136] Fig.53 This is a schematic diagram of a half-bridge power unit provided in an embodiment of the present application. Figure 1 ;

[0137] Fig.54 This is a second structural diagram of a half-bridge power unit provided in an embodiment of the present application;

[0138] Fig.55 It is a schematic diagram of an arrangement of a half-bridge power subunit provided in an embodiment of the present application;

[0139] Fig.56 Schematic diagram 3 of a half-bridge power unit provided in an embodiment of the present application;

[0140] Fig.57 This is a schematic diagram of the structure of a full-bridge power unit provided in an embodiment of the present application. Figure 1 ;

[0141] Fig.58It is a structural schematic diagram of a heat dissipation substrate provided in an embodiment of the present application;

[0142] Fig.59 This is a second structural diagram of a full-bridge power unit provided in an embodiment of the present application;

[0143] Fig.60 A schematic diagram of electric field line simulation of a full-bridge power unit provided in an embodiment of the present application;

[0144] Fig.61 A schematic diagram of temperature simulation of a full-bridge power unit provided in an embodiment of the present application.

[0145] Reference numerals:

[0146] 211-first semiconductor power device; 11-drain power terminal of the first semiconductor power device; 12-source power terminal of the first semiconductor power device; 13-first gate drive terminal of the first semiconductor power device; 14-first source drive terminal of the first semiconductor power device; 15-first heat conducting layer; 16-body;

[0147] 212 - a second semiconductor power device; 21 - a drain power terminal of the second semiconductor power device; 22 - a source power terminal of the second semiconductor power device; 23 - a second gate drive terminal of the second semiconductor power device; 24 - a second source drive terminal of the second semiconductor power device;

[0148] 21-1-half-bridge power subunit 1; 21-2-half-bridge power subunit 2; 21-3-half-bridge power subunit 3; 21-4-half-bridge power subunit 4;

[0149] 31-DC positive busbar; 311-first external terminal;

[0150] 32-DC negative busbar; 321-second external terminal;

[0151] 33-AC output pole busbar; 331-third external terminal; 332-groove;

[0152] 1-capacitor; 4-first insulating layer; 5-second insulating layer; 10-third insulating layer;

[0153] 6- heat dissipation substrate; 61- boss; 62- heat dissipation column;

[0154] 7-driving plate; 8-first opening; 9-protruding structure;

[0155] 51-U phase half-bridge power unit; 52-V phase half-bridge power unit; 53-W phase half-bridge power unit;

[0156] Fifth Specification Figure

[0157] Fig.62 is a diagram of the electric field simulation result of the busbar assembly of the prior art;

[0158] Fig.63 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0159] Fig.64 is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention;

[0160] Fig.65 is a connection diagram of a busbar assembly according to an embodiment of the present invention;

[0161] Fig.66 It corresponds to Fig.65 A connection diagram of the busbar assembly from another perspective;

[0162] Fig.67 is an equivalent circuit diagram of a half-bridge subunit according to an embodiment of the present invention;

[0163] Fig.68 is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention;

[0164] Fig.69 is a diagram of electric field simulation results of a busbar assembly according to an embodiment of the present invention;

[0165] Fig.70 is a schematic diagram of a layout of power semiconductor devices connected in parallel according to an embodiment of the present invention;

[0166] Fig.71 is a schematic diagram of a layout of four groups of power semiconductor devices connected in parallel according to an embodiment of the present invention;

[0167] Fig.72 is a schematic diagram of the layout of power semiconductor devices in a half-bridge subunit according to an embodiment of the present invention;

[0168] Fig.73 is a schematic diagram of a first power semiconductor device according to an embodiment of the present invention;

[0169] Fig.74 is a schematic diagram of a second power semiconductor device according to an embodiment of the present invention;

[0170] Fig.75 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention;

[0171] Fig.76 is a schematic diagram of a heat conducting layer according to an embodiment of the present invention;

[0172] Fig.77 It is a thermal simulation diagram according to the prior art;

[0173] Fig.78 is a thermal simulation diagram according to an embodiment of the present invention;

[0174] Fig.79 is a schematic diagram of the layout of a three-phase full-bridge power semiconductor device unit according to an embodiment of the present invention;

[0175] Fig.80 is an overall schematic diagram of a three-phase full-bridge integrated power semiconductor device unit according to an embodiment of the present invention;

[0176] Fig.81 is a block diagram of an electronic device according to an embodiment of the present invention;

[0177] Fig.82 is a block diagram of a vehicle according to one embodiment of the present invention.

[0178] Reference numerals:

[0179] Existing technology:

[0180] Busbar assembly 21';

[0181] A driving board 23'; a first power semiconductor device 220'; a second power semiconductor device 230'; a DC positive busbar 210'; a DC negative busbar 212'; and an AC output busbar 214'.

[0182] This application:

[0183] Vehicle 100;

[0184] Electronic equipment 1;

[0185] A power semiconductor module 10;

[0186] U-phase half-bridge power semiconductor device unit 20; V-phase half-bridge power semiconductor device unit 30; W-phase half-bridge power semiconductor device unit 40; upper bridge structure 50; lower bridge structure 60; half-bridge sub-unit 70;

[0187] Busbar assembly 21; drive board 23; busbar capacitor 24; heat dissipation substrate 25; load 26;

[0188] DC positive busbar 210; DC positive terminal 211; DC negative busbar 212; DC negative terminal 213; AC output busbar 214; AC terminal 215; first insulating layer 216; second insulating layer 217; third insulating layer 218; first power semiconductor device 220; second power semiconductor device 230; heat conducting layer 240;

[0189] first drain terminal 221 ; first source terminal 222 ; first drive terminal 223 ; first drive source terminal 224 ; first drive gate terminal 225 ; second drain terminal 231 ; second source terminal 232 ; second drive terminal 233 ; second drive source terminal 234 ; second drive gate terminal 235 ; substrate 251 ; boss 252 ; heat dissipation column 253 . DETAILED DESCRIPTION

[0190] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that unless otherwise specifically stated, the relative arrangement of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present application.

[0191] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the present application, its application, or uses.

[0192] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0193] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0194] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0195] First specific embodiment

[0196] The present application embodiment provides a half-bridge power unit, such as Figure 1 and Figure 2a As shown, the half-bridge power unit includes:

[0197] The AC output pole busbar 33 has a first surface;

[0198] At least one half-bridge power subunit, each half-bridge power subunit is arranged on the first surface side of the AC output pole busbar 33, and each half-bridge power subunit at least includes a first semiconductor power device 211 and a second semiconductor power device 212;

[0199] The source power terminal 12 and the drain power terminal 11 of the first semiconductor power device 211 are respectively arranged on the upper surface of the first semiconductor device, and the source power terminal 21 and the drain power terminal 22 of the second semiconductor power device are respectively arranged on the upper surface of the second semiconductor power device, wherein:

[0200] The source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are commonly connected to the first surface of the AC output busbar 33 .

[0201] It should be noted that the embodiment of the present application does not limit the number of semiconductor power sub-units included in the semiconductor power unit.

[0202] In one embodiment of the present application, the AC output busbar 33 is generally made of copper. Also, a corresponding connection terminal may be provided on the AC output busbar 33 to connect the midpoint of the half bridge formed by the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212. Alternatively, when the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are at the same height, as shown in FIG. Figure 1 As shown, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 can be connected to the AC output busbar 33 by bonding.

[0203] The first semiconductor power device 211 and the second semiconductor power device 212 are generally semiconductor power devices with the same specifications.

[0204] In one example, the first semiconductor power device 211 may be a SiC single tube, and a plurality of SiC chips may be packaged inside the SiC single tube. Also, the appearance structure of the first semiconductor power device 211 may be as follows: Figure 2a and Figure 2b As shown, it includes: a drain power terminal 11, a source power terminal 12, a first source drive terminal 13 and a first gate drive terminal 14. Among them, the drain power terminal 11, the source power terminal 12, the first source drive terminal 13 and the first gate drive terminal 14 are usually made of copper material. And, the first source drive terminal 13 and the first gate drive terminal 14 are collectively referred to as the first drive terminal of the first semiconductor power device 211.

[0205] And, if Figure 2b The bottom view of the first semiconductor power device 211 is shown, and a first heat conducting layer 15 is usually provided at the bottom of the first semiconductor power device 211. The first heat conducting layer 15 is usually made of copper material and is insulated from the inside of the first semiconductor power device 211 by a ceramic layer, and has an excellent heat conducting effect.

[0206] In the embodiment of the present application, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are connected to the first surface of the AC output pole busbar 33, so that the AC output pole busbar 33 connects the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 to form a half-bridge midpoint formed by externally leading out. Since each half-bridge power sub-unit is arranged on the first surface side of the AC output pole busbar 33, other busbars of the half-bridge power unit, such as the DC positive busbar 31 connected to the drain power terminal 12 of the first semiconductor power device 211, and the DC negative busbar 32 connected to the source power terminal 21 of the second semiconductor power device 212, can form a shielding layer, thereby suppressing the electromagnetic interference generated by the AC output pole busbar 33. Furthermore, it is not necessary to set openings on other busbars for the AC output busbar 33 to lead out the half-bridge midpoint formed by connecting the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212. This reduces the difficulty and complexity of processing the half-bridge power unit.

[0207] The embodiment of the present application provides a half-bridge power unit, including: an AC output pole busbar, the AC output pole busbar having a first surface; at least one half-bridge power sub-unit, each half-bridge power sub-unit is arranged on the first surface side of the AC output pole busbar, and each half-bridge power sub-unit includes at least a first semiconductor power device and a second semiconductor power device; the source power terminal and the drain power terminal of the first semiconductor power device are respectively arranged on the upper surface of the first semiconductor device, and the source power terminal and the drain power terminal of the second semiconductor power device are respectively arranged on the upper surface of the second semiconductor power device, wherein: the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first surface of the AC output pole busbar. In the embodiment of the present application, the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are connected to the first surface of the AC output pole busbar, so that the connection between the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device is externally led out by the AC output pole busbar. Since each half-bridge power sub-unit is arranged on the first surface side of the AC output pole busbar, other busbars of the half-bridge power unit, such as the DC positive busbar connected to the drain power terminal of the first semiconductor power device, and the DC negative busbar connected to the source power terminal of the second semiconductor power device, can form a shielding layer, thereby suppressing the electromagnetic interference generated by the AC output pole busbar. In addition, it is not necessary to set openings on other busbars for the AC output pole busbar to lead out the half-bridge midpoint formed by connecting the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device. This reduces the difficulty and complexity of processing the half-bridge power unit.

[0208] In one embodiment of the present application, Figure 1 As shown, the first semiconductor power device 211 and the second semiconductor power device 212 are arranged side by side along a first direction, and the source power terminal 12 of the first semiconductor power device 211 is adjacent to the drain power terminal 21 of the second semiconductor power device 212; the first direction is the direction in which the source power terminal 11 of the first semiconductor power device 211 points to the drain power terminal 12.

[0209] In the embodiments of the present application, Figure 1 As shown, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are arranged adjacent to each other, specifically, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are not separated by terminals of other semiconductor power devices. Figure 1 As shown, the terminals of the first semiconductor power device 211 and the second semiconductor power device 212 along the first direction are, in sequence: a source power terminal 22 of the second semiconductor power device 212, a drain power terminal 21 of the second semiconductor power device 212, a source power terminal 12 of the first semiconductor power device 211, and a drain power terminal 11 of the first semiconductor power device 211.

[0210] In the embodiment of the present application, the first semiconductor power device 211 and the second semiconductor power device 212 are arranged side by side along the first direction, and the source power terminal 12 of the first semiconductor power device 211 is arranged adjacent to the drain power terminal 21 of the second semiconductor power device 212. In this way, it is convenient to connect the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 to form a half-bridge midpoint, and then it is convenient to connect the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 to the AC output pole busbar 33.

[0211] In one embodiment of the present application, Figure 1 As shown, the half-bridge power unit provided in the embodiment of the present application also includes:

[0212] The DC positive busbar 31 and the drain power terminal 11 of the first semiconductor power device 211 are electrically connected to the DC positive busbar 31 .

[0213] In the embodiment of the present application, the half-bridge power unit further includes a DC positive busbar 31, which is electrically connected to the drain power terminal 11 of the first semiconductor power device 211. In this way, the structure of the half-bridge power unit provided in the embodiment of the present application is more complete.

[0214] In combination with the above embodiment, in one embodiment of the present application, Figure 1 As shown, the half-bridge power unit provided in the embodiment of the present application also includes:

[0215] The DC negative busbar 32 and the source power terminal 16 of the second semiconductor power device 212 are electrically connected to the DC negative busbar 32 .

[0216] In the embodiment of the present application, the half-bridge power unit further includes a DC negative busbar 32, which is electrically connected to the source power terminal 22 of the second semiconductor power device 212. In this way, the structure of the half-bridge power unit provided by the embodiment of the present application is more complete.

[0217] In one embodiment of the present application, Figure 1 As shown, the AC output pole busbar 33 has a second surface, and the first surface of the AC output pole busbar 33 and the second surface of the AC output pole busbar 33 are opposite surfaces of the AC output pole busbar 33;

[0218] The DC positive busbar 31 and the DC negative busbar 32 are both located on the second surface side of the AC output busbar 33 .

[0219] In the embodiment of the present application, the DC positive busbar 31 and the DC negative busbar 31 and all semiconductor power sub-units are located on different sides of the AC output busbar 33. In this way, the structure of the half-bridge power unit provided in the embodiment of the present application can be regularized, which is convenient for processing the half-bridge power unit.

[0220] In one embodiment of the present application, as shown in the figure, the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33 are spaced and arranged in parallel in the second direction, the second direction is the direction of the half-bridge power subunit pointing to the AC output busbar 33, and the second direction is perpendicular to the first direction.

[0221] In the embodiment of the present application, the positions of the DC positive busbar 31 and the DC negative busbar 32 can be swapped. The following description is made by taking the DC positive busbar 31 being located between the DC negative busbar 32 and the AC output busbar 33 as an example.

[0222] In one example, taking the semiconductor power device as an NMOS tube as an example, the equivalent circuit diagram of a half-bridge power sub-unit in the half-bridge power unit provided in the embodiment of the present application is as follows: Figure 3a The AC output busbar is not shown. Figure 3a The dashed line with an arrow in the middle is the current direction in the half-bridge power subunit.

[0223] In the above Figure 3a Based on the above, taking the half-bridge power unit including 4 half-bridge power sub-units as an example, the equivalent circuit diagram of the half-bridge power unit is as follows: Figure 3b Among them, the four half-bridge power subunits are respectively a half-bridge power subunit 1 21 - 1 , a half-bridge power subunit 21 - 2 , a half-bridge power subunit 3 21 - 3 and a half-bridge power subunit 4 21 - 4 . Figure 3b The dotted line with an arrow pointing rightwards is the current direction on the DC positive busbar 31 , and the dotted line with an arrow pointing leftwards is the current direction on the DC negative busbar 32 .

[0224] In the embodiments of the present application, Figure 3a As shown, the current direction in the first semiconductor power device 211 and the second semiconductor device 212 is Figure 3a The direction of the current in the DC positive busbar 31 and the DC negative busbar 32 is from top to bottom. Figure 3a The bottom-to-top direction in the half-bridge power subunit, i.e., the direction of the semiconductor power devices of the half-bridge power subunit, is opposite to the current direction in the DC positive busbar 31 and the DC negative busbar 32. At the same time, the DC positive busbar 31 and the DC negative busbar 32 are adjacent to each other. Therefore, the DC positive busbar 31 and the DC negative busbar 32 are spaced closely together. Based on this, the DC positive busbar 31 and the DC negative busbar 32 can achieve a good mutual inductance cancellation effect, thereby reducing parasitic inductance.

[0225] At the same time, if Figure 3b The current in the DC positive busbar 31 and the current in the DC negative busbar 32 are in opposite directions, so that the parasitic inductance introduced by the DC positive busbar 31 and the DC negative busbar 32 can be reduced, thereby improving the dynamic uneven current effect of the half-bridge power unit during the switching process.

[0226] In one embodiment of the present application, Figure 1 or Figure 4 As shown, the DC positive busbar 31 is located between the DC negative busbar 32 and the AC output busbar 33 .

[0227] In another embodiment of the present application, the DC negative busbar 32 is located between the DC positive busbar 31 and the AC output busbar 33 .

[0228] It should be noted that in the embodiment of the present application, the situation where the DC negative busbar 32 is located between the DC positive busbar 31 and the AC output busbar 33 is not illustrated.

[0229] In the embodiment of the present application, the positions of the DC positive busbar 31 and the DC negative busbar 32 can be interchanged, so that the half-bridge power unit provided in the embodiment of the present application has high configuration flexibility.

[0230] In one embodiment of the present application, when the DC positive busbar 31 is located between the DC negative busbar 32 and the AC output busbar 33, as shown in FIG. Figure 1As shown, a first insulating layer 4 is provided between the DC positive busbar 31 and the DC negative busbar 32 , and a second insulating layer 5 is provided between the DC positive busbar 31 and the AC output busbar 33 .

[0231] In the embodiment of the present application, when the DC positive busbar 31 is located between the DC negative busbar 32 and the AC output busbar 33, an insulating layer is provided between the AC output busbar 33 and the DC positive busbar 31, and between the DC positive busbar 31 and the DC negative busbar 32. In this way, a short circuit between any two of the busbars (ie, the AC output busbar 33, the DC positive busbar 31, and the DC negative busbar 32) can be avoided.

[0232] Similarly, in one embodiment of the present application, when the DC negative busbar 32 is located between the DC positive busbar 31 and the AC output pole busbar 33, a third insulation layer is arranged between the DC negative busbar and the DC positive busbar, and a fourth insulation layer is arranged between the DC negative busbar and the AC output pole busbar 33.

[0233] Furthermore, in order to prevent short circuit between the DC positive busbar 31 and the DC negative busbar 32, which are located on the outer layer, and other devices (such as the drive board), three insulation layers can be further provided on the side of the DC positive busbar 31 and the DC negative busbar 32, which are located on the outer layer, away from the AC output busbar 33. Figure 1 As shown, when the DC negative pole busbar 32 is located at the outer layer, an insulating layer may be provided on the side of the DC negative pole busbar 32 away from the AC output pole busbar 33 .

[0234] In one embodiment of the present application, Figure 5 As shown, the AC output busbar leads out a first external terminal 331 in a third direction, the third direction is perpendicular to the first direction and the second direction, and the first external terminal 331 is used to connect an external load.

[0235] In the embodiments of the present application, Figure 5 As shown, the AC output pole busbar 33 leads out a first external terminal 331 in the third direction, so as to facilitate the connection of an external device to the midpoint of the half bridge connected to the AC output pole busbar 33 .

[0236] It should be noted that in the embodiments of the present application, the orientation of the third direction is not specifically described.

[0237] In one embodiment of the present application, the DC positive busbar 31 leads out a second external terminal 311 in the third direction.

[0238] In the embodiments of the present application, Figure 5As shown, the DC positive busbar 31 leads out a second external terminal 311 in the third direction, so as to facilitate the connection of an external device to the drain power terminal 21 of the first semiconductor power device 211 connected to the DC positive busbar 31 .

[0239] Furthermore, since the DC positive busbar 31 leads out the second external terminal 311 in the third direction, and the drain power terminal 11 of the first semiconductor power device 211 connected to the DC positive busbar 31 is located in the first direction, the second external terminal 311 and the end of the DC positive busbar 31 connected to the drain power terminal 11 of the first semiconductor power device 211 are located on different sides.

[0240] In one embodiment of the present application, the DC negative busbar 32 leads out a third external terminal 321 in the third direction.

[0241] In the embodiments of the present application, Figure 5 As shown, the DC negative busbar 32 leads out a third external terminal 321 in the third direction, so as to facilitate the connection of an external device to the source power terminal 22 of the second semiconductor power device 212 connected to the DC negative busbar 32 .

[0242] Furthermore, since the DC negative busbar 32 leads out the third external terminal 321 in the third direction, and the source power terminal 22 of the second semiconductor power device 212 connected to the DC negative busbar 32 is located in the first direction, the third external terminal 321 and the end of the DC negative busbar 32 connected to the source power terminal 22 of the second semiconductor power device 212 are located on different sides.

[0243] In one embodiment of the present application, the second external terminal 311 and the third external terminal 321 are disposed on a first side in the third direction.

[0244] In the embodiments of the present application, Figure 5 As shown, since the second external terminal 311 and the third external terminal 321 are usually used to connect the same device, the second external terminal 311 and the third external terminal 321 are arranged on the first side of the third direction, that is, the second external terminal 311 and the third external terminal 321 are arranged on the same side, which facilitates the connection of the device connecting the second external terminal 311 and the third external terminal 321 to the half-bridge power unit provided in the embodiment of the present application.

[0245] It should be noted that the device of the second external terminal 311 and the third external terminal 321 is usually a capacitor.

[0246] In one embodiment of the present application, the first external terminal 331 is disposed on the second side in the third direction.

[0247] In the embodiments of the present application, Figure 5As shown, the first external terminal 331 is located at the opposite side to the second external terminal 311 or the third external terminal 312. In this way, the structure of the semiconductor power unit is compact, and the size of the power semiconductor power unit can be optimized.

[0248] In one embodiment of the present application, Figure 6 As shown, the half-bridge power unit provided in the embodiment of the present application includes a capacitor 1, wherein:

[0249] A first end of the capacitor 1 is electrically connected to the first external terminal 311 , and a second end of the capacitor 1 is electrically connected to the second external terminal 321 .

[0250] It should be noted that in the embodiments of the present application, Figure 6 The relative position relationship between the capacitor 1 and the half-bridge power unit is shown in FIG. 1 , but the electrical connection between the capacitor 1 and the second external terminal 321 and the first external terminal 311 is not shown.

[0251] In the embodiment of the present application, the capacitor 1 is specifically a DC capacitor used for filtering. Based on this, the half-bridge power unit provided in the embodiment of the present application can also achieve filtering.

[0252] In one embodiment of the present application, the first semiconductor power device 211 further includes a first driving terminal, and the first driving terminal is disposed on a side surface of the first semiconductor power device 211 in the third direction;

[0253] The second semiconductor power device 212 further includes a second driving terminal, which is disposed on a side surface of the second semiconductor power device 212 in the third direction.

[0254] In the embodiment of the present application, the first driving terminal of the first semiconductor power device 211 is specifically the first source driving terminal 13 and the first gate driving terminal 14. The second driving terminal of the second semiconductor power device 212 is specifically the second source driving terminal 23 and the second gate driving terminal 24.

[0255] It is understandable that the first semiconductor power device 211 has two side surfaces in the third direction, and therefore, the first source drive terminal 13 and the first gate drive terminal 14 can be disposed on any of the two side surfaces in the third direction of the first semiconductor power device 211. Similarly, the second semiconductor power device 212 is also the same.

[0256] Taking the first semiconductor power device 211 as an example, Figure 2a The first source driving terminal 13 and the first gate driving terminal 14 are arranged on the side of the first semiconductor power device 211 in the third direction away from the starting point of the third direction.

[0257] In one embodiment of the present application, Figure 1As shown, the first driving terminal of the first semiconductor power device 211 includes a first gate driving terminal 14, and the first gate driving terminal 14 extends along the second direction.

[0258] In the embodiment of the present application, the first gate driving terminal 14 is extended along the second direction, so that the first gate driving terminal 14 can be exposed to the outside so that other devices can be connected to the first gate driving terminal 14 .

[0259] Similarly, in one embodiment of the present application, Figure 1 As shown, the second driving terminal of the second semiconductor power device 212 includes a second gate driving terminal 24, and the second gate driving terminal 24 extends along the second direction.

[0260] In the embodiment of the present application, the second gate driving terminal 24 is extended along the second direction, so that the second gate driving terminal 24 can be exposed to the outside for other devices to connect to the second gate driving terminal 14 .

[0261] In one embodiment of the present application, Figure 5 or Figure 7 As shown, the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 are provided with a first opening 8 , and the first gate drive terminal of the first semiconductor power device 211 is led out through the first opening 8 .

[0262] In the embodiment of the present application, first openings 8 are provided on the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 , and the first openings 8 can facilitate the external lead-out of the first gate drive terminal 14 .

[0263] On the basis of the previous embodiment, the driving terminal of the first semiconductor power device 211 further includes a first source driving terminal 13 . The first source driving terminal 13 is disposed adjacent to the first gate driving terminal 14 , and the first source driving terminal 13 is led out through the first opening 8 .

[0264] In the embodiment of the present application, the adjacent setting can be specifically as follows Figure 2a On the basis that the first source driving terminal 13 is arranged adjacent to the first gate driving terminal 14 , the first source driving terminal 13 and the first gate driving terminal 14 can be led out along the second direction through the same first opening 8 .

[0265] Of course, the first source driving terminal 13 may also be disposed in other ways, for example, disposed on the opposite side of the first gate driving terminal 14 .

[0266] Similarly, in one embodiment of the present application, the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 are provided with a second opening 9 , and the second gate drive terminal 24 of the second semiconductor power device 212 is led out through the second opening 9 .

[0267] In the embodiment of the present application, second openings 9 are provided on the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 , and the second openings 9 can facilitate the external lead-out of the second gate drive terminal 24 .

[0268] Furthermore, in one embodiment of the present application, the driving terminal of the second semiconductor power device 211 further includes a second source driving terminal 23 , the second source driving terminal 23 is disposed adjacent to the second gate driving terminal 24 , and the second source driving terminal 23 is led out through the second opening 9 .

[0269] In the embodiment of the present application, the adjacent setting can be specifically as follows Figure 2a On the basis that the second source driving terminal 23 is arranged adjacent to the second gate driving terminal 24 , the second source driving terminal 23 and the second gate driving terminal 24 can be led out along the second direction through the same second opening 9 .

[0270] Of course, the second source driving terminal 23 may also be disposed in other ways, for example, disposed on the opposite side of the second gate driving terminal 24 .

[0271] In one embodiment of the present application, Fig.10 As shown, the half-bridge power unit further includes a driving board 7 , and the first gate driving terminal 14 and / or the first source driving terminal 13 are led out from the first opening 8 and electrically connected to the driving board 7 .

[0272] In the embodiments of the present application, Fig.10 As shown, the driving board 7 is covered on the outermost layer of the busbars including the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33, and is electrically connected to the first gate driving terminal 14 and / or the first source driving terminal 13, so as to realize the driving of the half-bridge power unit.

[0273] In addition, the driving board 7 can be spaced and arranged in parallel with the DC positive busbar 31, the DC negative busbar 32 and the AC output pole busbar 33 in the second direction, and the DC positive busbar 31 and the DC negative busbar 32 are located between the driving board 7 and the AC output pole busbar 33. Based on this, the DC positive busbar 31 and the DC negative busbar 32 can form a shielding layer to shield the electromagnetic interference of the AC output pole busbar 33. In this way, the AC output pole busbar 33 will not generate electromagnetic interference to the driving board 7, thereby improving the working stability of the full-bridge power unit.

[0274] It should be noted that a driving device is usually integrated on the driving board 7 to provide a driving source for the half-bridge power unit.

[0275] Similarly, in one embodiment of the present application, Fig.10 As shown, the half-bridge power unit further includes a driving board 7 , and the second gate driving terminal 24 and / or the second source driving terminal 23 are led out from the second opening 9 and electrically connected to the driving board 7 .

[0276] In the embodiments of the present application, Fig.10 As shown, the driving board 7 is covered on the outermost layer of the busbars including the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33, and is electrically connected to the second gate driving terminal 24 and / or the second source driving terminal 23 to realize the driving of the half-bridge power unit.

[0277] In one embodiment of the present application, at least one of the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 covers at least one half-bridge power subunit.

[0278] In one embodiment of the present application, the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 all cover all half-bridge power sub-units and are of equal size.

[0279] In the embodiment of the present application, at least one of the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33 covers at least one half-bridge power sub-unit. In this way, the half-bridge power sub-unit can be fully covered, which makes the appearance structure of the full-bridge power unit provided in the embodiment of the present application simple.

[0280] In one embodiment of the present application, the half-bridge power unit includes at least two half-bridge power sub-units, and the at least two half-bridge power sub-units are arranged side by side along a third direction, and the third direction is perpendicular to the first direction in the plane where the first surface of the AC output pole busbar 33 is located.

[0281] In the embodiment of the present application, for example Figure 6 The half-bridge power unit shown in FIG. Figure 3b As shown, each half-bridge power sub-unit in the half-bridge power unit is connected in series between capacitors 1, so that the influence of capacitor 1 on each half-bridge power sub-unit may not be completely the same.

[0282] In addition, if Figure 6 As shown, the half-bridge power sub-units in the half-bridge power unit are arranged side by side along the third direction, and the first semiconductor power device 211 and the second semiconductor power device 212 in the half-bridge power sub-unit are arranged along the first direction perpendicular to the third direction, so that the structure of the half-bridge power unit is more compact, that is, the integration is high.

[0283] In one embodiment of the present application, the semiconductor power device terminal and the busbar are electrically connected by laser welding.

[0284] In the embodiment of the present application, the semiconductor power device terminal specifically refers to: the drain power terminal 11 of the first semiconductor power device 211, the source power terminal 12 of the first semiconductor power device 211, the drain power terminal 21 of the second semiconductor power device 212, and the source power terminal 22 of the second semiconductor power device 212. The busbar specifically refers to: the DC positive busbar 31, the DC negative busbar 32, and the AC output busbar 33. Based on this, the semiconductor power device terminal and the busbar are electrically connected by laser welding, which specifically refers to: the drain power terminal 11 of the first semiconductor power device 211 is electrically connected to the DC positive busbar 31 by laser welding, the source power terminal 22 of the second semiconductor power device 212 is electrically connected to the DC negative busbar 32 by laser welding, and the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are electrically connected to the AC output busbar 33 by laser welding.

[0285] In the embodiment of the present application, the drain power terminal 11 of the first semiconductor power device 211 and the DC positive busbar 31, the source power terminal 22 of the second semiconductor power device 212 and the DC negative busbar 32, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 and the AC output busbar 33 meet the laser welding requirements, and laser welding can be used to form an electrical connection. This makes the power semiconductor unit provided in the embodiment of the present application have the advantages of fast processing speed, high reliability of welding points, no contact resistance, local heating, etc.

[0286] In one embodiment of the present application, the embodiment of the present application further provides a full-bridge power unit, characterized in that it comprises at least two half-bridge power units of any one of the embodiments shown in the above-mentioned half-bridge power units.

[0287] It should be noted that, in the case where the full-bridge power unit includes at least two half-bridge power units of any one of the embodiments shown in the above half-bridge power units, Fig.10 As shown, the driving boards 7 included in at least two half-bridge power units can be connected as a whole. Fig.10 In the figure, a full-bridge power unit including three half-bridge power units is taken as an example.

[0288] In one embodiment of the present application, taking the full-bridge power unit as a three-phase full-bridge power unit, and the three half-bridge power units in the three-phase full-bridge power unit are respectively a U-phase half-bridge power unit 51, a V-phase half-bridge power unit 52, and a W-phase half-bridge power unit 53 as an example, the structural schematic diagram of the full-bridge power unit can be as follows: Figure 8 shown.

[0289] In one embodiment of the present application, at least two half-bridge power units are arranged side by side along a first direction.

[0290] In the embodiments of the present application, Figure 8 As shown, by arranging at least two half-bridge power units side by side along the first direction, the full-bridge power unit can have a moderate aspect ratio, thereby making the structure of the full-bridge power unit more compact.

[0291] In one embodiment of the present application, the full-bridge power unit further includes a driving plate 7 , and the driving plate 7 at least partially covers the half-bridge power unit.

[0292] In the embodiment of the present application, the full-bridge power unit includes a driving plate 7, at least part of which covers the half-bridge power unit. Fig.10 As shown, the driving plate 7 completely covers the half-bridge power unit.

[0293] In one embodiment of the present application, the above-mentioned covering method can be exemplified as follows: 冖 " method, at least partially covering the half-bridge power unit. Of course, the above-mentioned covering method can also be exemplified as "one" method, at least partially covering the half-bridge power unit.

[0294] In one embodiment of the present application, Fig.10 As shown, the full-bridge power unit includes three half-bridge power units, and the driving board 7 is arranged to cover the three half-bridge driving units.

[0295] In this embodiment, the structure of the full-bridge power unit provided in the embodiment of the present application is regular.

[0296] In one embodiment of the present application, the first semiconductor power device 211 further includes a first gate drive terminal 14 , and the first gate drive terminal 14 is electrically connected to the driving board 7 .

[0297] In one embodiment of the present application, the second semiconductor power device 212 further includes a second gate drive terminal 24 , and the second gate drive terminal is electrically connected to the driving board 7 .

[0298] In the embodiment of the present application, the first gate drive terminal 14 of the first semiconductor power device 211 is electrically connected to the drive board 7, and the second gate drive terminal 24 of the second semiconductor power device 212 is connected to the drive board 7. The first semiconductor power device 211 and the second semiconductor power device 212 can be driven by the drive board 7.

[0299] Similarly, in another embodiment of the present application, the first semiconductor power device 211 further includes a first source driving terminal 13 , and the first source driving terminal 13 is electrically connected to the driving board 7 .

[0300] The second semiconductor power device 211 further includes a second source driving terminal 23 , and the second source driving terminal 23 is electrically connected to the driving board 7 .

[0301] In the embodiment of the present application, the first source driving terminal 13 of the first semiconductor power device 211 is electrically connected to the driving board 7, and the second source driving terminal 23 of the second semiconductor power device 212 is connected to the driving board 7. The first semiconductor power device 211 and the second semiconductor power device 212 can be driven by the driving board 7.

[0302] In one embodiment of the present application, Figure 8 or Fig. 9 As shown, the full-bridge power unit further includes a heat dissipation substrate 6 , and the half-bridge power unit is arranged on the heat dissipation substrate 6 .

[0303] In the embodiment of the present application, the full-bridge power unit also includes a heat dissipation substrate 6 , and the half-bridge power unit is arranged on the heat dissipation substrate 6 in such a way that the lower surface of the half-bridge power unit in the full-bridge power unit is arranged on the heat dissipation substrate 6 .

[0304] In the embodiment of the present application, the heat dissipation substrate 6 can realize heat dissipation for the full-bridge power unit, thereby ensuring the stable operation of the full-bridge power unit.

[0305] In addition, the heat dissipation substrate 6 can also provide mechanical support for the full-bridge power unit. Also, the material of the heat dissipation substrate 6 is not limited in the embodiment of the present application.

[0306] In one embodiment of the present application, the first semiconductor power device 211 includes a first heat-conducting layer 15 located on the lower surface; the second semiconductor power device 212 includes a second heat-conducting layer located on the lower surface;

[0307] The first heat conducting layer 15 and the second heat conducting layer are welded or sintered to the heat dissipation substrate 6 .

[0308] In the embodiments of the present application, Figure 2b As shown, the first semiconductor power device 211 includes a first heat-conducting layer 15 located on the lower surface. The first heat-conducting layer 15 can facilitate rapid heat dissipation of the first semiconductor power device 211.

[0309] Correspondingly, the second semiconductor power device 212 includes a second heat-conducting layer located on the lower surface. The second heat-conducting layer can facilitate rapid heat dissipation of the second semiconductor power device 212.

[0310] Furthermore, by welding or sintering the first heat-conducting layer 15 and the second heat-conducting layer to the heat-dissipating substrate 6 , rapid heat dissipation of the first semiconductor power device 211 and the second semiconductor power device 212 can be achieved.

[0311] The welding may be exemplarily laser welding. Also, the heat dissipation substrate 6 may be made of a material that matches the first heat conduction layer 15 of the first semiconductor power device 211 and the second heat conduction layer of the second semiconductor power device 212 with a coefficient of thermal expansion CTE.

[0312] In one embodiment of the present application, a boss 61 corresponding to the first semiconductor power device 211 and the second semiconductor power device 212 is provided on the heat dissipation substrate 6;

[0313] The first heat-conducting layer 19 and the second heat-conducting layer are respectively welded or sintered to the corresponding bosses 61 on the heat-dissipating substrate 6 .

[0314] In the embodiments of the present application, Fig. 9 As shown, a boss 61 corresponding to the semiconductor power unit is processed on one side of the heat dissipation substrate 6 where the full-bridge power unit is welded. This ensures that the creepage distance between the terminal on the semiconductor power unit and the heat dissipation substrate 6 meets the requirements and facilitates the installation and positioning of the full-bridge power unit.

[0315] Furthermore, a heat dissipation column 62 may be provided on a side of the heat dissipation substrate 6 away from at least two half-bridge power units for liquid cooling.

[0316] In the embodiments of the present application, the heat conducting layer of each semiconductor power device in the half-bridge power unit is connected to the heat dissipation substrate boss 61 through a sintering process, which can improve the thermal conductivity and reliability of the heat dissipation substrate 6.

[0317] Based on Fig.10 The full-bridge power unit shown in Fig.11 As shown, the DC positive busbar 31 and the DC negative busbar 32 form a shield between the AC output pole busbar 33 and the driving board 7. The main electric field lines emitted from the AC output pole busbar 33 cannot reach the driving board 7. Therefore, the potential jump on the AC output pole busbar 33 is not likely to affect the normal operation of the driving board.

[0318] Furthermore, based on Fig.10 The full-bridge power unit shown in Fig.12As shown, the average junction temperature of the full-bridge power unit under the layout of the embodiment of the present application is 145.4°C, the maximum junction temperature is 153.1°C, and the average junction temperature difference between the group of single tubes closest to the inlet and the group of single tubes farthest from the coolant is 17°C. From the simulation results, it can be seen that the arrangement adopted in the embodiment of the present application has better heat dissipation and temperature balancing performance. The reasons for this difference are: the water tank flow channel of the coolant in the embodiment of the present application is shorter, the overall flow resistance is reduced, and the overall heat dissipation performance can be improved; the temperature difference of the coolant at the inlet and outlet is reduced, which can improve the temperature balancing performance.

[0319] An embodiment of the present application further provides an electronic device, which includes a full-bridge power unit provided by any of the above embodiments or a half-bridge power unit provided by any of the above embodiments.

[0320] An embodiment of the present application also provides a vehicle, which includes the electronic device provided by the above embodiment.

[0321] Although some specific embodiments of the present application have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are only for illustration, not for limiting the scope of the present application. It should be understood by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

[0322] Second specific embodiment

[0323] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0324] Reference below Figure 13-Figure 25 A power semiconductor device unit according to an embodiment of the present invention is described.

[0325] Fig.13 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention, Fig.14 is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention, Fig.15 Schematic diagram of the connection of a busbar assembly of a power semiconductor device unit according to an embodiment of the present invention.

[0326] like Figure 13-Figure 15 As shown, the power semiconductor device unit 11 includes: a semiconductor device 22 and a busbar structure 21 .

[0327] Among them, the semiconductor device 22 can be a MOSFET (metal oxide semiconductor field effect transistor), an IGBT (insulated gate bipolar transistor), or other types of power devices. The semiconductor device 22 can be used to control current flow, voltage stability and power regulation. A power terminal is formed on the upper surface of the semiconductor device 22. The power terminal can refer to an electrical connection point or connector on the upper surface of the semiconductor device 22, which is used to connect the device to other circuit elements, modules or systems in the power supply, load 26 or control signal. The power terminal plays a key role in the semiconductor device 22, allowing current and voltage to be transmitted between the device and the external circuit, thereby realizing the transmission, switching and control of electrical energy.

[0328] Specifically, the semiconductor device 22 generally receives electrical energy from a power source, and the power terminal can be used to direct the power current to the semiconductor device 22, thereby allowing the device to control and process the input power. The semiconductor device 22 transmits the processed electrical energy to an external circuit or load 26, and the power terminal can be used to pass the output current to an external device or system. In addition, through the power terminal, the current can be controlled, for example, in a switching mode, the on and off state of the current can be controlled to realize the function of a power switch. In addition, through the power terminal, the voltage level can be controlled, for example, in an inverter, the desired AC output can be generated by controlling the voltage of the power terminal.

[0329] In some embodiments, the type and design of the power terminals may vary depending on the semiconductor device 22 and the application. They may be solder joints, sockets, pins or other types of connections, and are generally required to have high current carrying capacity, low resistance, high reliability and adaptability to high power density.

[0330] In some embodiments, the busbar structure 21 may be a component closely associated with the semiconductor device 22. The busbar structure 21 may be a multi-layer metal bar, usually made of a conductive material, such as copper, aluminum, etc., and may be used to connect the semiconductor device 22. The busbar structure 21 is located on the semiconductor device 22, extending along the first direction and the second direction. The busbar structure 21 has a connection terminal corresponding to the power terminal, and the connection terminal is connected to the power terminal. This connection may be made in a variety of ways, such as welding, sintering, laser welding, etc. This connection method helps to ensure a stable electrical connection.

[0331] The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction and the second direction intersect. In some specific embodiments, the first direction may be the length direction of the power semiconductor device unit 11, and the second direction may be the width direction of the power semiconductor device unit 11.

[0332] In some embodiments, the connection terminals of each busbar have uniform thickness at the connection with the corresponding connected power terminals and have a preset area of ​​contact, which is compatible with processes such as solder welding and laser welding. Among them, solder welding is a common method for connecting electronic components, which involves using solder to connect two or more metal parts. In the solder welding process, the solder is usually an alloy with a low melting point, such as a tin-lead alloy. This alloy can melt when heated, coat the connecting parts, and then cool rapidly to form a strong electrical and mechanical connection. Solder welding is suitable for connecting pins, terminals or connection points of electronic components to ensure reliable electrical connections.

[0333] Laser welding can be a high-precision connection method suitable for precise connection of small electronic components. Through laser welding, connection at high temperature can be achieved to ensure the firmness of the connection. Specifically, during the laser welding process, the laser beam is focused on the contact points of the connection terminals of the busbar structure 21 and the power terminals of the semiconductor device 22 to generate high temperatures to fuse them together. Since they have sufficient horizontal contact area, this can ensure the stability and reliability of the welded connection while reducing the resistance in the connection. This design can be used to connect the busbar structure 21 and the semiconductor device 22 in the power semiconductor device unit 11 to ensure the high performance and stability of the circuit.

[0334] According to the power semiconductor device unit 11 of the embodiment of the present invention, the power terminals are placed on the upper surface of the semiconductor device 22, and the connecting terminals are connected to the power terminals by using the busbar structure 21. This means that the power terminals are arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminals. The planar size of the power semiconductor device unit 11 is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units 11 can be accommodated in the same physical space, thereby improving the integration of the unit.

[0335] Fig.16 FIG. 1 is a schematic diagram of a device layout of a plurality of semiconductor devices connected in parallel to a half-bridge according to an embodiment of the present invention. Fig.16 As shown, the power semiconductor device unit 11 includes a plurality of semiconductor devices 22, which may be power devices, such as SiC (silicon carbide) power devices, for high power applications. The plurality of semiconductor devices 22 are arranged at intervals and in an array. This arrangement design helps to improve the heat dissipation performance of the device, optimize the circuit layout, and ensure the isolation and stability between electronic components.

[0336] In some embodiments, the plurality of semiconductor devices 22 may include a plurality of first semiconductor devices 220 and a plurality of second semiconductor devices 230 .

[0337] Among them, multiple first semiconductor devices 220 are connected in parallel, and multiple second semiconductor devices 230 are also connected in parallel to increase the current carrying capacity and power processing capacity. Multiple first semiconductor devices 220 are arranged along the first direction, and multiple second semiconductor devices 230 are arranged along the first direction. The first direction is the length direction of the power semiconductor device unit 11. Multiple first semiconductor devices 220 and multiple second semiconductor devices 230 are arranged correspondingly along the second direction, and the second direction is the width direction of the power semiconductor device unit 11. Multiple first semiconductor devices 220 together constitute an upper bridge structure 50, and multiple second power semiconductor devices 22 together constitute a lower bridge structure 60. In addition, in order to reduce the parasitic inductance of the commutation circuit, the upper bridge structure 50 and the lower bridge structure 60 need to be as close as possible to naturally form the following. Fig.16 The upper and lower bridge structures 60 are arranged in a line, respectively. The first direction may be a direction that expands as the number of parallel connections increases. This layout helps to reduce the distance between adjacent semiconductor devices 22, reduce parasitic inductance, and improve system performance and efficiency.

[0338] Fig.17 is a schematic diagram of a layout of four groups of semiconductor devices connected in parallel according to an embodiment of the present invention, Fig.17 The arrangement of semiconductor devices according to the embodiment of the present invention and the corresponding positions of the DC bus capacitor 24 and the load 26 are shown. Fig.17 As shown, the first semiconductor device 220 and the second semiconductor device 230 cooperate with each other to form a half-bridge sub-unit 70 of the semiconductor device 22 . Fig.17 The four half-bridge subunits 70 are closely arranged along the length direction. In addition, the DC bus capacitor 24 and the load 26 can be arranged on both sides of the half-bridge subunit 70 along the second direction. At this time, the commutation loop distance from each half-bridge subunit 70 to the DC bus capacitor 24 is equal, which helps to ensure that the semiconductor devices 22 in different half-bridge subunits 70 encounter similar circuit conditions during operation, thereby reducing the risk of dynamic uneven current problems.

[0339] It should be noted that the positions of the DC bus capacitor 24 and the load 26 can be interchanged without affecting the problem solved by the present invention, which means that the design can be adjusted according to the actual layout and requirements to adapt to different system installation requirements.

[0340] In some embodiments, the present invention allows for flexible modification of the parallel number N to meet actual needs, which means that the number of semiconductor devices 22 connected in parallel can be increased or decreased according to the power requirements of the application to achieve the required output power.

[0341] In some embodiments, the design of the busbar structure 21 needs to consider the layout of the DC bus capacitor 24 and the load 26, and the semiconductor device 22 needs to be connected to the DC bus capacitor 24, and the distance between the two needs to be as close as possible. Specifically, when the DC bus capacitor 24 is arranged in the first direction, the commutation inductance of the half-bridge subunit 70 closest to the DC bus capacitor 24 is the smallest, and the distances of the remaining half-bridge subunits 70 from the DC bus capacitor 24 increase successively along the first direction, and the commutation inductance also increases accordingly. The difference in commutation inductance may cause the semiconductor devices 22 at different positions to have dynamic uneven current during operation, further causing uneven loss and uneven temperature, thereby reducing the output performance of the half-bridge subunit 70, and even damaging the semiconductor device 22.

[0342] When the DC bus capacitor 24 is arranged in the second direction, the distances between the half-bridge subunits 70 at different positions and the DC bus capacitor 24 are equal, and they have the same commutation inductance, so there will be no dynamic current imbalance problem. In addition, in high-power applications, more semiconductor devices 22 need to be connected in parallel, and the dynamic current sharing problem is particularly important. Therefore, the present invention is designed based on the layout of the DC bus capacitor 24 in the second direction to ensure dynamic current sharing.

[0343] Fig.18 is a schematic diagram of a first semiconductor device according to an embodiment of the present invention, Fig.18 As shown, the power terminal of each first semiconductor device 220 includes a first drain terminal 221. The first drain terminal 221 may be an electrode or a pin on the device, and is used to connect to a circuit for current control and power transmission.

[0344] like Fig.14 As shown, the busbar structure 21 includes a DC positive busbar 210. The DC positive busbar 210 can be a level in the busbar structure 21, which is used to connect the positive terminal in the power semiconductor device unit 11. This part is designed to provide the DC positive voltage required by the circuit. The DC positive busbar 210 is located above a plurality of first semiconductor devices 220 and is usually arranged in parallel with them. The DC positive busbar 210 has a first DC connection terminal corresponding to the first drain terminal 221. These connection terminals are located on the DC positive busbar 210 and correspond to the first drain terminal 221. They are used to connect the DC positive busbar 210 to the first drain terminal 221 of the first semiconductor device 220 to establish an electrical connection.

[0345] Through this connection design, each first semiconductor device 220 can be easily connected to the DC positive busbar 210 to obtain the required power. The busbar structure 21 provides mechanical support and electrical connection to ensure stable power output. This layout can be used in various electronic devices and applications that require high power density and compactness.

[0346] In some embodiments, the DC positive busbar 210 leads out a DC positive terminal 211 from the first side away from the second semiconductor device 230 along the second direction to connect the first end of the DC bus capacitor 24. The bus capacitor can be an electronic component used to store charge and stabilize voltage to ensure stable operation of the circuit. Therefore, with this arrangement, the DC positive busbar 210 has a dual role. First, it provides a DC power supply to multiple first semiconductor devices 220. Secondly, it connects the DC bus capacitor 24 to the circuit to ensure a stable power supply voltage. This helps to maintain the stability and performance of the power semiconductor device unit 11. In addition, the location selection of the DC positive busbar 210 makes it easier to connect to the first end of the DC bus capacitor 24.

[0347] Fig.19 is a schematic diagram of a second semiconductor device according to an embodiment of the present invention, Fig.19 As shown, the power terminal of each second semiconductor device 230 includes a second source terminal 232. The second source terminal 232 may be an electrode or a pin on the device, and is used to connect to a circuit for current control and power transmission.

[0348] like Fig.14 As shown, the busbar structure 21 also includes a DC negative busbar 212. The DC negative busbar 212 can be arranged on the DC positive busbar 210, and is used to connect the negative terminal in the power semiconductor device unit 11. This part is designed to provide the DC negative voltage required by the circuit. The DC negative busbar 212 has a second DC connection terminal corresponding to the second source terminal 232, and the second DC connection terminal is connected to the second source terminal 232. This means that the DC negative busbar 212 provides an electrical connection to the power terminal of the second semiconductor device 230. This connection allows current to be transmitted from the second semiconductor device 230 to the DC negative busbar 212, and then return to the power supply or other parts of the circuit.

[0349] Through this configuration, the DC negative busbar 212 is connected to the second semiconductor device 230 and helps control and transmit power. This helps ensure that current can flow through the power semiconductor device unit 11 efficiently and correctly distribute and control power in the circuit.

[0350] In some embodiments, the distance between the DC positive busbar 210 and the DC negative busbar 212 can be designed to be as small as possible. This arrangement design helps to enhance the mutual inductance cancellation effect and reduce the commutation loop inductance, thereby improving system performance and efficiency.

[0351] In some embodiments, the DC negative busbar 212 leads out a DC negative terminal 213 from the first side away from the second semiconductor device 230 along the second direction to connect the second end of the DC bus capacitor 24. This helps to store electrical energy and stabilize the DC voltage, thereby ensuring that the power supply voltage in the power semiconductor device unit 11 is stable and not affected by current fluctuations.

[0352] like Fig.18 As shown, in the power terminal of each first semiconductor device 220, in addition to the first drain terminal 221, a first source terminal 222 is also included. Fig.19 As shown, in the power terminal of each second semiconductor device 230 , in addition to the second source terminal 232 , a second drain terminal 231 is also included.

[0353] In some embodiments, the source terminal and the drain terminal may be key connection points in the semiconductor device 22 for controlling the output of current and power. Their presence allows a variety of current control strategies to be implemented in the power semiconductor device unit 11, thereby meeting the needs of different application scenarios, such as motor control, power management, and industrial power distribution. By controlling the voltage and current between the source terminal and the drain terminal, the conduction and cutoff of the semiconductor device 22 can be effectively controlled, and the switching and regulation of the current can be achieved, thereby providing precise power control in various applications.

[0354] In some embodiments, multiple power chips can be packaged inside the first semiconductor device 220 and the second semiconductor device 230. This means that multiple power chips can work in parallel in the same device, thereby improving the overall power carrying capacity. This multi-chip packaging design helps to meet the needs of high-power applications and improve power density.

[0355] In some embodiments, the drain terminal and the source terminal of the semiconductor device 22 are located at the top to form a surface-mount terminal. This design allows the semiconductor device 22 to have a smaller size, which helps to reduce the occupied space of the power semiconductor device unit 11 and is particularly suitable for high-density integrated electronic devices.

[0356] like Fig.14 As shown, the busbar structure 21 further includes an AC connection portion 219. The AC connection portion 219 may refer to a portion or structure used to connect different semiconductor devices 22 in the power semiconductor device unit 11. Its main function is to realize the AC transmission of current, transferring current from one semiconductor device 22 to another semiconductor device 22, thereby forming a desired circuit path.

[0357] In some embodiments, the AC connection portion 219 generally includes conductive materials or conductor structures, such as copper bars, wires, connecting pieces, etc., and their design and layout determine the path and distribution of current between different semiconductor devices 22. The AC connection portion 219 plays a key role in different topological structures. For example, it can be used to connect multiple semiconductor devices 22 in half-bridge or full-bridge topologies together to achieve complex power conversion functions.

[0358] In some embodiments, the AC connection portion 219 has a first AC connection terminal corresponding to the first source terminal 222 and a second AC connection terminal corresponding to the second drain terminal 231, the first AC connection terminal is connected to the first source terminal 222, and the second AC connection terminal is connected to the second drain terminal 231, so as to transmit an AC signal from one device to another, thereby realizing the required current path.

[0359] In some embodiments, the AC connection portion 219 is located at the bottom layer of the busbar structure 21 to facilitate connecting the first source terminal 222 of the first semiconductor device 220 and the second drain terminal 231 of the second semiconductor device 230. This design helps to effectively connect and distribute current, and fully utilizes the shielding effect of the DC positive busbar 210 and the DC negative busbar 212 to reduce electromagnetic interference to the drive board 23.

[0360] like Fig.14 As shown, the busbar structure 21 also includes an AC output pole busbar 214. The AC output pole busbar 214 can be a circuit component for connecting the AC current generated by the power semiconductor device unit 11 to the load 26. Specifically, the AC output pole busbar 214 is located at the top layer of the busbar structure 21, the AC output pole busbar 214 is connected to the AC connection portion 219, and the AC output pole busbar 214 leads out the AC terminal 215 from the second side away from the first semiconductor device 220 along the second direction, so as to facilitate the connection of the load 26, so that the power semiconductor device unit 11 can supply power or drive the load 26. This is essential for realizing various applications, such as electric vehicle drive systems, industrial power supplies, electronic equipment 1, etc.

[0361] Therefore, the design and layout of the AC output pole busbar 214 can ensure efficient current transmission and connection to meet the power demand of the load 26. In this way, the power semiconductor device unit 11 can be connected to the external load 26 or other circuits while maintaining high efficiency to achieve the required power conversion function.

[0362] Fig. 20 is a schematic diagram of the layout of semiconductor devices in a half-bridge subunit according to an embodiment of the present invention, such as Fig. 20As shown, the half-bridge subunit 70 may include a first semiconductor device 220 and a second semiconductor device 230. The two semiconductor devices 22 are arranged in the same direction, and this layout helps to connect the first drain terminal 221 of the first semiconductor device 220 with the second source terminal 232 of the second semiconductor device 230, thereby forming a complete half-bridge topology. These features and design advantages together ensure that the present invention has excellent performance, reliability and integration in high-power electronic applications, especially in terms of compact size, high power density and efficient heat dissipation.

[0363] In some embodiments, Figure 13-Figure 15 As shown, the AC output busbar 214, the DC positive busbar 210, the DC negative busbar 212 and the AC connection part 219 are stacked in sequence along the vertical direction of the device, and an insulating layer is provided between each busbar to ensure the insulation requirements. The busbar structure 21 also includes a first insulating layer 218. The first insulating layer 218 is located between the DC positive busbar 210, the AC connection part 219 and the DC negative busbar 212. The first insulating layer 218 can be an insulating material layer in the power semiconductor device unit 11, which helps to isolate the DC circuit and the AC circuit to prevent electrical interference or failure between them.

[0364] like Figure 13-Figure 15 As shown, the AC output pole busbar 214 is located above the AC negative pole busbar, so as to be easily led to the load 26. The busbar structure 21 also includes a second insulating layer 217, which is located between the DC negative pole busbar 212 and the AC output pole busbar 214. The function of the second insulating layer 217 can be to provide electrical isolation and insulation protection between the DC negative pole busbar 212 and the AC output pole busbar 214 to prevent current short circuit or circuit failure.

[0365] In some embodiments, the first insulating layer 218, the DC negative busbar 212, and the second insulating layer 217 have first through holes 250 at positions corresponding to the second AC connection terminals. The AC output busbar 214 passes through the first through holes 250 to connect with the AC connection portion 219, so that the AC signal can be transmitted to the external circuit or load 26 connected to the second AC connection terminal. This connection method ensures the connectivity and reliability of the current path.

[0366] like Figure 13-Figure 15As shown, the busbar structure 21 also includes a third insulating layer 216. The third insulating layer 216 is located above the AC output pole busbar 214 and the second insulating layer 217. The function of the third insulating layer 216 can be to provide additional electrical isolation between the AC output pole busbar 214 and other parts. This helps to ensure that the current of the AC output pole busbar 214 does not affect other components or structures located above. The first insulating layer 218, the second insulating layer 217, and the third insulating layer 216 can also provide physical protection for electronic components. It can reduce the risk of dust, pollutants or external objects entering the busbar structure 21 and affecting circuit performance.

[0367] In some embodiments, the first insulating layer 218, the second insulating layer 217, and the third insulating layer 216 may be made of different insulating materials, such as insulating plastic or insulating resin, glass fiber, etc. The material selection of the insulating layer can be determined according to the specific application and environmental requirements. Different insulating materials have different electrical and mechanical properties, so it is necessary to select a material suitable for a specific application, which is not specifically limited here.

[0368] In some embodiments, the first insulating layer 218, the second insulating layer 217, and the third insulating layer 216 are usually flat to ensure effective electrical isolation. Their thickness and size need to be determined according to design requirements and are not specifically limited here.

[0369] like Fig.15 As shown, the semiconductor device 22 also includes a drive terminal 223. In the power semiconductor device unit 11, the semiconductor device 22 usually requires an external control signal to control its switch state to adjust the flow of current or voltage. These control signals are usually generated by an external circuit or a drive circuit and transmitted to the semiconductor device 22 through the drive terminal 223. The busbar structure 21 has a second through hole 260 in a direction perpendicular to the first direction or the second direction, and the drive terminal 223 is led out from the second through hole 260. The second through hole 260 can ensure that the control signal can be effectively transmitted to the semiconductor device 22 to achieve the required power regulation and switching operation. In an embodiment, the drive terminal 223 may include a drive source terminal 224 and a drive gate terminal 225.

[0370] like Fig.13 As shown, the power semiconductor device unit 11 further includes a driving board 23, which may be a component located above the busbar structure 21, and its main function is to connect to the driving terminal 223 and provide the required control signal. The driving board 23 generally includes a driving circuit and electronic components to ensure that the semiconductor device 22 can accurately respond to the control signal.

[0371] In some embodiments, the driving board 23 may be an independent circuit board, which is located on the top of the busbar structure 21 and connected to the driving terminal 223. The driving board 23 may include components such as logic circuits, sensors, and power supplies for controlling the power semiconductor device unit 11, so as to achieve precise control of the semiconductor device 22.

[0372] In some embodiments, the driving terminal 223 of the semiconductor device 22 can be connected using a Kelvin connection. This can improve the performance of the circuit and reduce the power loss during the switching process by reducing the common source inductance of the power circuit and the driving circuit inside the semiconductor device. This design can improve the switching efficiency and reduce the power loss, which is particularly important in high-power applications.

[0373] Fig.21 is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention, such as Fig.21 As shown, the DC positive busbar 210 and the DC negative busbar 212 are connected to each half-bridge sub-unit 70 in sequence, forming a "parallel" mode to connect each half-bridge sub-unit 70 in parallel. This means that each half-bridge sub-unit 70 is connected in parallel to share the input power supply and the output load 26. This connection method helps to improve the total power handling capacity of the system.

[0374] Furthermore, since the half-bridge subunits 70 are connected in "parallel", the circuit paths between them are very short, so the parasitic inductance is low. Low parasitic inductance helps reduce current and voltage fluctuations and improves the stability and performance of the system. The half-bridge subunits 70 are connected in parallel, and they can share the current load 26 during operation. This parallel connection method can achieve dynamic current sharing, ensuring that the semiconductor devices 22 in different subunits bear similar current loads 26, reducing the risk of dynamic current imbalance problems, thereby improving the reliability of the system.

[0375] In addition, by connecting multiple half-bridge subunits 70 in parallel, their current carrying capacity can be added together to achieve a higher current carrying capacity, which is very important for handling high power currents and coping with high power applications.

[0376] In some embodiments, since the length of the commutation loop from each half-bridge subunit 70 to the DC bus capacitor 24 is equal, a single half-bridge subunit 70 can be taken for inductance simulation. The total inductance of N semiconductor devices 22 connected in parallel as the power semiconductor device unit 11 is the inductance of N half-bridge subunits 70 connected in parallel. In the simulation, the distance between the DC positive busbar 210 and the DC negative busbar 212 is kept at 1.5 mm. The simulation results show that the commutation inductance of the half-bridge subunit 70 in the present invention is about 9.1nH, and the commutation inductance of the half-bridge subunit 70 in the prior art is about 12.7nH, which is a decrease of about 28%. The main reason for this difference is that the power terminal of the present invention is on the upper surface of the semiconductor device 22, which can reduce the size occupied by the power terminal, thereby reducing the inductance introduced by the power terminal and the corresponding busbar.

[0377] Fig. 22 is a schematic diagram of magnetic field distribution in the half-bridge subunit inductance simulation of the prior art. Fig.23 FIG. 1 is a schematic diagram of magnetic field distribution in a half-bridge subunit inductor simulation according to an embodiment of the present invention. Fig. 22 and Fig.23 As shown, due to the reduction in the overall size of the commutation circuit, the magnetic flux enclosed by the commutation circuit of the half-bridge subunit 70 of the present invention is lower than the magnetic flux enclosed by the commutation circuit of the half-bridge subunit 70 of the prior art, that is, the commutation circuit inductance of the present invention is smaller than the commutation circuit inductance of the prior art.

[0378] Fig.24 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention. Fig.24 As shown, the power semiconductor device unit 11 further includes a heat dissipation substrate 25 . A plurality of semiconductor devices 22 are disposed on the heat dissipation substrate 25 .

[0379] Among them, the heat dissipation substrate 25 can be a key component in the power semiconductor device unit 11, which is used to provide mechanical support and heat dissipation for the power semiconductor device unit 11, thereby ensuring the stable operation and good heat dissipation performance of the power semiconductor device unit 11. The heat dissipation substrate 25 is usually made of a material with good thermal conductivity, such as aluminum or copper, to effectively transfer the heat generated by the power semiconductor device 22 to the external environment to prevent the device from overheating, thereby keeping the operating temperature of the device within an acceptable range. Therefore, the heat dissipation substrate 25 plays an important role in heat dissipation in the power semiconductor device unit 11.

[0380] In some embodiments, the heat dissipation substrate 25 can achieve good thermal conductivity and ensure that the CTE (coefficient of thermal expansion) of the heat dissipation substrate 25 matches that of the semiconductor device 22. This means ensuring that the heat dissipation substrate 25 and the semiconductor device 22 have similar thermal expansion coefficients to prevent different degrees of size or shape changes between them when the temperature changes. If their thermal expansion coefficients do not match, they may be distorted, stressed, or cracked when the temperature rises or falls, thereby affecting the performance and reliability of the device.

[0381] like Fig.24 As shown, the heat dissipation substrate 25 includes: a substrate 251, a plurality of bosses 252 and a plurality of heat dissipation columns 253. Among them, the substrate 251 can be the main part of the heat dissipation substrate 25, which is usually a flat plate-like structure, used to support and fix the power semiconductor device 22 and achieve heat dissipation. It is usually made of a material with good thermal conductivity, such as metal. A plurality of bosses 252 are arranged on the first surface of the substrate 251, and these bosses 252 can be small protrusion structures, which are used to place the semiconductor device 22. The plurality of bosses 252 are arranged corresponding to the plurality of semiconductor devices 22, and the semiconductor devices 22 are located on these bosses 252. The bosses 252 are machined on the upper surface of the heat dissipation substrate 25, which can be used to ensure that the creepage distance between the terminal and the heat dissipation substrate 25 meets the safety requirements, and can facilitate installation and positioning. Among them, the creepage distance can be the minimum distance between two conductive surfaces, which needs to meet specific electrical safety standards to ensure the reliability and safety of the equipment. In power electronic equipment 1, especially in high-power applications, this is very critical, because when the current is large, electrical isolation and insulation problems may cause serious safety risks. Therefore, it is necessary to ensure that the distance between the terminal of the semiconductor device 22 and the heat dissipation substrate 25 is large enough to prevent electrical breakdown or electrical short circuit, thereby preventing damage to the circuit or causing malfunction.

[0382] In some embodiments, a plurality of heat dissipation columns 253 are disposed on the second surface of the substrate 251, and the second surface of the substrate 251 is opposite to the first surface of the substrate 251. The heat dissipation columns 253 may transfer the heat transferred to the substrate 251 through the bosses 252 to the external environment of the module to ensure that the semiconductor device 22 is maintained at a safe operating temperature.

[0383] In some embodiments, the heat sink 253 can dissipate heat through a liquid cooling system. Specifically, the heat sink 253 can be a thermally conductive element, usually made of metal, used to transfer the heat of the device to the coolant for heat dissipation. In the liquid cooling system, the coolant flows through the heat sink 253, absorbs the heat generated by the device, and then takes the heat away by flowing to maintain the temperature of the device within an acceptable range. The design and placement of the heat sink 253 are very important for effective liquid cooling. They need to be in close contact with the device to maximize the heat transfer efficiency and ensure that the coolant can effectively absorb and dissipate heat.

[0384] Fig.25 Schematic diagram of a heat conducting layer according to an embodiment of the present invention. Fig.25 As shown, a heat conducting layer 240 is provided on the lower surface of the semiconductor device 22. The heat conducting layer 240 is usually made of a material with good thermal conductivity, such as copper metal. The main function of the heat conducting layer 240 is to increase the heat conduction efficiency between the semiconductor device 22 and the boss 252. By adding the heat conducting layer 240 on the lower surface of the semiconductor device 22, the heat generated by the device can be more effectively transferred to the boss 252, and then transferred to the heat dissipation substrate 25. This helps to prevent the semiconductor device 22 from overheating and improves the performance and reliability of the device.

[0385] In some embodiments, the heat conducting layer 240 and the corresponding boss 252 may be connected by a sintering process, which not only helps to improve the heat conduction efficiency, but also ensures that the heat conducting layer 240 will not separate or fall off during operation.

[0386] Fig.26 is a block diagram of a power semiconductor module according to an embodiment of the present invention, Fig.26 As shown, the power semiconductor module 10 includes at least one power semiconductor device unit 11 as described in the above embodiments. The main function of the power semiconductor module 10 may be to integrate and assemble multiple power semiconductor device units 11 so as to provide high-power, high-efficiency power control and power conversion functions in applications such as electronic equipment or vehicles.

[0387] According to the power semiconductor module 10 of the embodiment of the present invention, the power terminals are placed on the upper surface of the semiconductor device 22, and the connecting terminals are connected to the power terminals by using the busbar structure 21. This means that the power terminals are arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminals. The planar size of the power semiconductor device unit 11 is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units 11 can be accommodated in the same physical space, thereby improving the integration of the units.

[0388] In some embodiments, the power semiconductor device unit 11 is a half-bridge power unit, which means that the design and configuration of the power semiconductor device unit 11 conform to the half-bridge topology. The half-bridge power unit is composed of a plurality of semiconductor devices 22, which are used to control and regulate current or voltage, and is usually used for power conversion and control in the electronic device 1. This structure is characterized by high efficiency, compactness and suitability for a variety of applications, such as inverters, DC-DC converters, etc. The length direction of the power semiconductor device unit 11 is consistent with the module direction. This arrangement helps to optimize power transmission and heat dissipation, and makes the module easier to wire and connect when integrated into the electronic device 1.

[0389] In some embodiments, the power semiconductor module 10 includes three power semiconductor device units 11 , which are arranged along a second direction to form a three-phase full-bridge power module. The second direction is a width direction of the power semiconductor device unit 11 .

[0390] Fig. 27 is a schematic diagram of the layout of a three-phase full-bridge power module according to an embodiment of the present invention. Fig. 27 As shown, the U-phase half-bridge power unit 20, the V-phase half-bridge power unit 30, and the W-phase half-bridge power unit 40 are arranged on the heat dissipation substrate 25 along the length direction to form a three-phase full-bridge power module. The DC connection terminal of each phase is located on the same side for connecting the external DC bus capacitor 24, while the AC connection terminal is located on the other side for connecting the load 26. This layout can ensure that each power semiconductor device unit 11 has low parasitic inductance and excellent dynamic current sharing characteristics.

[0391] Fig.28 FIG. 1 is an overall schematic diagram of a three-phase full-bridge power module integrated according to an embodiment of the present invention. Fig.28 As shown, the power semiconductor module 10 is composed of a heat dissipation substrate 25, a three-phase full-bridge power unit and a driving board 23 from bottom to top. This layout has high integration, compact design, good heat dissipation performance and reliability, and is particularly suitable for high-power and high-density applications.

[0392] In some embodiments, the power semiconductor module 10 further includes a DC bus capacitor 24. The DC bus capacitor 24 is generally a component for storing electric energy, which is located on one side of the first power semiconductor device close to the power semiconductor device unit 11 and is connected to the DC positive terminal 211 and the DC negative terminal 213 of the power semiconductor device unit 11, respectively.

[0393] In power electronic devices, the DC bus capacitor 24 plays a very important role. It is mainly used to smooth the voltage of the DC power supply, reduce voltage fluctuations, provide current to the load, and maintain the stability of the circuit by releasing or absorbing electrical energy when the voltage at the input or output of the power supply fluctuates. This design can effectively suppress high-frequency noise in the power supply and improve the working stability and reliability of the entire system.

[0394] Reference below Fig.29 An electronic device according to an embodiment of the present invention is described.

[0395] Fig.29 is a block diagram of an electronic device according to an embodiment of the present invention, such as Fig.29 As shown, the electronic device 1 includes the power semiconductor module 10 described in the above embodiment.

[0396] In some embodiments, the electronic device 1 can be any type of electronic system or device. This device may be used in various applications, including but not limited to power electronic converters, motor drives, power supplies, etc. The electronic device 1 can be applied in various fields, such as industrial automation, transportation, medical equipment, energy management, etc. The specific application depends on the type and configuration of the power semiconductor module 10, as well as the design and purpose of the device.

[0397] The electronic device 1 according to the embodiment of the present invention adopts the power semiconductor module 10 described in the above embodiment, by placing the power terminal on the upper surface of the semiconductor device 22 and connecting the connecting terminal to the power terminal using the busbar structure 21, which means that the power terminal is arranged perpendicular to the upper surface of the device, and no additional horizontal space is required to accommodate the power terminal. The planar size of the power semiconductor device unit 11 is reduced, thereby improving the compactness of the device unit and the freedom of layout. In addition, this design means that more power semiconductor device units 11 can be accommodated in the same physical space, thereby achieving high power density and high integration of the electronic device 1.

[0398] Fig.30 is a block diagram of a vehicle according to an embodiment of the present invention, such as Fig.30 As shown, a vehicle 100 includes the power semiconductor module 10 described in the above embodiment.

[0399] In some embodiments, the vehicle 100 may include, but is not limited to, a car, a truck, a motorcycle, an electric car, etc. Such a vehicle 100 is generally used for transportation, commuting, entertainment, or other purposes. The electronic device 1 may generally be installed in the power control system of the vehicle 100 for managing and controlling tasks such as power flow, motor control, and battery management of the vehicle 100. The power semiconductor module 10 of the electronic device 1 may play a key role in the vehicle power system. It may control the charging and discharging of the battery, manage the power output of the motor, and ensure the stability and efficiency of the vehicle power system.

[0400] According to the vehicle 100 of the embodiment of the present invention, by adopting the power semiconductor module 10 described in the above embodiment, the planar size occupied by the power terminal can be reduced, which means that the power control and electric system of the vehicle 100 can achieve higher power output in a smaller space, thereby improving the power performance and energy efficiency of the vehicle 100.

[0401] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0402] In the description of the present invention, "plurality" means two or more.

[0403] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0404] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

[0405] Third specific embodiment

[0406] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present invention and to enable the scope of the present invention to be fully communicated to those skilled in the art.

[0407] Reference Figure 31 to Figure 33 , an embodiment of the present invention provides a half-bridge power unit 20, wherein the half-bridge power unit 20 includes at least one half-bridge power subunit 201;

[0408] Each of the half-bridge power subunits 201 includes a group of upper bridge single tubes 2011 and lower bridge single tubes 2012, wherein the upper bridge single tubes 2011 and the lower bridge single tubes 2012 are connected in series;

[0409] The upper bridge single tube 2011 and the lower bridge single tube 2012 are devices of the same structure with the source power terminal and the drain power terminal located on the same side surface.

[0410] like Fig.31 , which is a schematic diagram of the device layout of the half-bridge power unit 20 of the embodiment of the present invention, including at least one half-bridge power subunit 201. When the number of half-bridge power subunits 201 increases, the half-bridge power unit 20 may include two or more half-bridge power subunits 201. Each half-bridge power subunit 201 includes a group of upper bridge single tubes 2011 and lower bridge single tubes 2012. The upper bridge single tubes 2011 and lower bridge single tubes 2012 used in the embodiment of the present invention are both power single tube devices that encapsulate multiple SiC chips, are internally insulated, and have source power terminals and drain power terminals located on the same side. Moreover, the upper bridge single tubes 2011 and lower bridge single tubes 2012 may be devices of the same specifications and models.

[0411] like Fig.32 and Fig.33 As shown in the figure, taking the upper bridge single tube 2011 as an example, the structural schematic diagram of the upper bridge single tube 2011 from different angles is given. Fig.32 It can be seen that each power terminal of the upper bridge single tube 2011 is located at the left side I position of the single tube. These power terminals can be copper terminals, which can improve the flow capacity and thermal conductivity. In addition, a heat-conducting layer that can quickly dissipate heat is also provided at the bottom of the upper bridge single tube 2011. The heat-conducting layer is insulated from the inside of the single tube by a ceramic layer and has an excellent thermal conductivity. The structure of the lower bridge single tube 2012 is exactly the same as that of the upper bridge single tube 2011, and will not be described here.

[0412] Combination Fig.31The layout diagram of the half-bridge power unit 20 shown in the figure shows that when the single tubes with power terminals concentrated on the same side are arranged in series, the problem of needing to cross a long distance when the power terminals are distributed on different sides of the single tube can be avoided, so the length of the busbar required in the series circuit can be effectively shortened. As the length of the busbar decreases, the parasitic inductance introduced by the busbar also decreases accordingly. The power control of this half-bridge power unit is more stable and the electrical performance is more stable. In addition, it is easy to understand that compared with using a single tube with power terminals distributed on both sides, the volume size of the half-bridge power unit can be intuitively reduced, the integration is higher, and the installation space can be saved.

[0413] Optionally, refer to Fig.34 and Fig.35 , the upper bridge single tube 2011 includes a first source power terminal S1 and a first drain power terminal D1, and the first source power terminal S1 and the first drain power terminal D1 are located on the same side surface of the upper bridge single tube 2011;

[0414] The lower bridge single tube 2012 includes a second source power terminal S2 and a second drain power terminal D2, and the second source power terminal S2 and the second drain power terminal D2 are located on the same side surface of the lower bridge single tube 2012;

[0415] The first source power terminal S1 and the second drain power terminal D2 are electrically connected and extended to form an AC output terminal AC_out. The first drain power terminal D1 is extended to form a DC positive terminal DC+. The second source power terminal S2 is extended to form a DC negative terminal DC-.

[0416] Specifically, if Fig.34 As shown, the power terminals of the upper bridge single tube 2011 include a first source power terminal S1 and a first drain power terminal D1 located on the same side surface, and the power terminals of the lower bridge single tube 2012 include a second source power terminal S2 and a second drain power terminal D2 located on the same side surface. Fig.35 As shown in the figure, the series connection of the upper bridge single tube 2011 and the lower bridge single tube 2012 can be realized by electrically connecting the first source power terminal S1 and the second drain power terminal D2 together. The node where the first source power terminal S1 and the second drain power terminal D2 meet extends to form an AC output terminal AC_out, and the AC output terminal AC_out can be used to electrically connect to a load device. Then, the remaining first drain power terminal D1 on the upper bridge single tube 2011 extends to form a DC positive terminal DC+, and the remaining second source power terminal S2 on the lower bridge single tube 2012 extends to form a DC negative terminal DC-. The DC positive terminal DC+ and the DC negative terminal DC- can be used to electrically connect to a DC capacitor.

[0417] Optionally, refer to Fig.35 and Fig.36 The lead-out direction of the DC positive terminal DC+ is in the extension direction of the second drain power terminal D2.

[0418] Specifically, in Fig.35 Based on the schematic diagram of the device connection circuit principle shown, no matter which orientation the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged, Fig.36 As shown in the figure, the lead-out direction of the DC positive terminal DC+ can be designed to be located in the extension direction of the second drain power terminal D2. When the lead-out direction is the same as the direction of the end of the second drain power terminal D2, it is led out along the +y direction shown in the figure. When the lead-out direction is opposite to the direction of the end of the second drain power terminal D2, it is led out along the -y direction shown in the figure. Along the y direction, the two are parallel to each other and can even overlap. Thereby, it helps to keep the busbar forming the DC positive terminal DC+ straight, which is beneficial to shorten the length of the busbar. It should be noted that in the embodiment of the present invention, in addition to using the extension direction of the second drain power terminal D2 as the reference datum for the lead-out direction of the DC positive terminal DC+, since the power terminals on the same single tube are all located on the same side surface, the extension direction of the second source power terminal S2 can also be used as a reference datum, and the lead-out direction of the DC positive terminal DC+ can also be in the extension direction of the second source power terminal S2, which will not be described in detail here.

[0419] Optionally, refer to Fig.35 The lead-out direction of the DC negative terminal DC- is in the extension direction of the second drain power terminal D2.

[0420] Specifically, in Fig.35 Based on the schematic diagram of the device connection circuit principle shown, no matter which orientation the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged, Fig.36 As shown in the figure, the lead-out direction of the DC negative terminal DC- can be designed to be located in the extension direction of the second drain power terminal D2. When the lead-out direction is the same as the direction of the end of the second drain power terminal D2, it is led out along the +y direction shown in the figure. When the lead-out direction is opposite to the direction of the end of the second drain power terminal D2, it is led out along the -y direction shown in the figure. Along the y direction, the two are parallel to each other and can even overlap. Thereby, it helps to keep the busbar forming the DC negative terminal DC- straight, which is beneficial to shorten the length of the busbar. It should be noted that in the embodiment of the present invention, in addition to using the extension direction of the second drain power terminal D2 as the reference datum for the lead-out direction of the DC negative terminal DC-, since the power terminals on the same single tube are all located on the same side surface, the extension direction of the second source power terminal S2 can also be used as a reference datum, and the lead-out direction of the DC negative terminal DC- can also be in the extension direction of the second source power terminal S2, which will not be described in detail here.

[0421] Optionally, refer to Fig.35 , the lead-out direction of the AC output terminal AC_out is in the extending direction of the second drain power terminal D2.

[0422] Specifically, in Fig.35 Based on the schematic diagram of the device connection circuit principle shown, no matter which orientation the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged, Fig.36 As shown in the figure, the lead-out direction of the AC output terminal AC_out can be designed to be located in the extension direction of the second drain power terminal D2. When the lead-out direction is the same as the direction of the end of the second drain power terminal D2, it is led out along the +y direction shown in the figure. When the lead-out direction is opposite to the direction of the end of the second drain power terminal D2, it is led out along the -y direction shown in the figure. Along the y direction, the two are parallel to each other and can even overlap. Thereby, it helps to keep the busbar forming the AC output terminal AC_out straight, which is beneficial to shorten the length of the busbar. It should be noted that in the embodiment of the present invention, in addition to using the extension direction of the second drain power terminal D2 as the reference datum for the lead-out direction of the AC output terminal AC_out, since the power terminals on the same single tube are all located on the same side surface, the extension direction of the second source power terminal S2 can also be used as a reference datum, and the lead-out direction of the AC output terminal AC_out can also be in the extension direction of the second source power terminal S2, which will not be described in detail here.

[0423] Optionally, refer to Fig.36 The DC positive terminal DC+ and the DC negative terminal DC- are located on a first side of the half-bridge power subunit 201 .

[0424] Specifically, if Fig.36 As shown in FIG. 2 , after the upper bridge single tube 2011 and the lower bridge single tube 2012 are electrically connected to lead out the DC positive terminal DC+ and the DC negative terminal DC-, the DC positive terminal DC+ and the DC negative terminal DC- can be designed to be located on the same side of the half-bridge power subunit 201, for example, both located at Fig.36 As shown in the diagram below, the DC terminals with positive and negative poles on the same side can reduce the difficulty in connecting the DC capacitors and make the layout of the DC capacitors more convenient.

[0425] Optionally, refer to Fig.36 , the AC output terminal AC_out is located at a second side of the half-bridge power subunit 201 , wherein the first side is opposite to the second side.

[0426] Specifically, if Fig.36 The DC positive terminal DC+ and the DC negative terminal DC- are both located at Fig.36The lower side of the half-bridge power subunit 201 is shown, and accordingly, the AC output terminal AC_out lead-out position can be designed to be on the upper side of the half-bridge power subunit 201. In this structure, after the space below the half-bridge power subunit 201 is occupied by the DC capacitor, the space above the half-bridge power subunit 201 can be used to connect and arrange load devices on the opposite side of the DC capacitor, which can make the layout of circuit devices more flexible and simple, and make full use of the space around the half-bridge power subunit 201.

[0427] Optionally, refer to Fig.37 The source power terminals and drain power terminals of the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged in opposite directions.

[0428] Specifically, in one embodiment, the following can be used: Fig.37 The schematic arrangement makes the source power terminals and drain power terminals of the upper bridge single tube 2011 and the lower bridge single tube 2012 face each other. Fig.37 As shown in the figure, at this time, the upper bridge single tube 2011 and the lower bridge single tube 2012 are in a face-to-face position relationship, the first drain power terminal D1 and the second source power terminal S2 are opposite, and the second drain power terminal D2 and the first source power terminal S1 are opposite.

[0429] Optionally, refer to Figures 38 to 40 , the half-bridge power unit 20 further includes a first busbar 202;

[0430] One end of the first busbar 202 is electrically connected to the first drain power terminal D1 , and the other end of the first busbar 202 extends to form the DC positive terminal DC+.

[0431] Specifically, the half-bridge power unit 20 of the embodiment of the present invention may also include: Figures 38 to 40 The first busbar 202 shown may be a conductive sheet with a protruding connection portion made by stamping and bending a copper sheet. The connection portion at one end of the first busbar 202 is electrically connected to the first drain power terminal D1, and the other end extends from the half-bridge power unit 20 to form a DC positive terminal DC+. The thin sheet-shaped first busbar 202 can reduce the space occupied by the positive connection structure and provide a larger flow area.

[0432] Optionally, refer to Figures 38 to 40 The other end of the first busbar 202 extends to the opposite side of the first drain power terminal D1, crosses the upper bridge single tube 2011 and extends out to form the DC positive terminal DC+.

[0433] Specifically, combined Figures 38 to 40In one embodiment, when the first busbar 202 is used for connection, after the first end of the first busbar 202 is welded and fixed to the first drain power terminal D1, the second end of the first busbar 202 extends in the opposite direction toward the opposite side of the first drain power terminal D1 along the -y direction shown in the figure until it crosses the upper bridge single tube 2011, and then extends from the edge of the upper bridge single tube 2011 to form a DC positive terminal DC+ exposed outside the half-bridge power unit 20. It can be seen that the span of the first busbar 202 is the size of the upper bridge single tube 2011 in the y direction.

[0434] Optionally, refer to Figures 38 to 40 , the half-bridge power unit also includes a second busbar 203;

[0435] One end of the second busbar 203 is electrically connected to the second source power terminal S2 , and the other end of the second busbar 203 extends to form the DC negative terminal DC−.

[0436] Specifically, the half-bridge power unit 20 of the embodiment of the present invention may also include: Figures 38 to 40 The second busbar 203 shown in the figure can be a conductive sheet with a protruding connection portion made by stamping and bending a copper sheet. The connection portion at one end of the second busbar 203 is electrically connected to the second source power terminal S2, and the other end extends from the half-bridge power unit 20 to be exposed to the outside to form a DC negative terminal DC-. The thin sheet-shaped second busbar 203 can not only reduce the space occupied by the negative electrode connection structure, but also provide a larger current flow area.

[0437] Optionally, refer to Figures 38 to 40 The other end of the second busbar 203 extends to the same side of the second source power terminal S2, crosses over the upper bridge single tube 2011 and extends out to form the DC negative terminal DC-.

[0438] Specifically, combined Figures 38 to 40 As shown in the figure, in one embodiment, when the second busbar 203 is used for connection, after the first end of the second busbar 203 is welded and fixed to the second source power terminal S2, the second end of the second busbar 203 extends along the -y direction shown in the figure, toward the same side direction of the second source power terminal S2, until it crosses the upper bridge single tube 2011, and then extends from the edge of the upper bridge single tube 2011 to form a DC negative terminal DC- exposed outside the half-bridge power unit 20. It can be seen that the span of this second busbar 203 is also the size of the upper bridge single tube 2011 in the y direction.

[0439] Optionally, refer to Figures 38 to 40 , the half-bridge power unit further includes a third busbar 204;

[0440] One end of the third busbar 204 is electrically connected to the first source power terminal S1 and the second drain power terminal D2 at the same time, and the other end of the third busbar 204 extends out to form the AC output terminal AC_out.

[0441] Specifically, the half-bridge power unit 20 of the embodiment of the present invention may also include: Figures 38 to 40 The third busbar 204 shown may be a conductive sheet with a protruding connection portion made by stamping and bending a copper sheet. The connection portion at one end of the third busbar 204 is electrically connected to the first source power terminal S1 and the second drain power terminal D2 at the same time, and the other end extends from the half-bridge power unit 20 to be exposed to the outside to form an AC output terminal AC_out. The thin sheet-shaped third busbar 204 can reduce the space occupied by the output connection structure and provide a larger current flow area.

[0442] Optionally, refer to Figures 38 to 40 The other end of the third busbar 204 extends to the same side of the first source power terminal S1 and crosses over the lower bridge single tube 2012 to form the AC output terminal AC_out.

[0443] Specifically, combined Figures 38 to 40 In one embodiment, when the third busbar 204 is used for connection, after the connection portion of the first end of the third busbar 204 is welded and fixed to the first source power terminal S1 and the second drain power terminal D2 at the same time, the second end of the third busbar 204 extends along the +y direction shown in the figure, toward the same side direction of the first source power terminal S1, until it crosses the lower bridge single tube 2012, and then extends from the edge of the lower bridge single tube 2012 to form an AC output terminal AC_out exposed outside the half-bridge power unit 20. It can be seen that the span of this third busbar 204 is the size of the lower bridge single tube 2012 in the y direction.

[0444] Optionally, refer to Figures 38 to 40 The first busbar 202, the second busbar 203 and the third busbar 204 are stacked and insulated from each other.

[0445] Specifically, combined Figures 38 to 40 As shown in the figure, the first busbar 202, the second busbar 203 and the third busbar 204 are stacked together, and an insulating layer is provided between the two adjacent layers of busbars to avoid short circuits between power terminals. It is easy to understand that in the area near the power terminals, each busbar is designed with a gap or slot to avoid structural interference.

[0446] Optionally, refer to Fig.41The source power terminal and the drain power terminal of the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged in the same direction.

[0447] Specifically, in one embodiment, the following can be used: Fig.41 The schematic arrangement makes the source power terminal and the drain power terminal of the upper bridge single tube 2011 and the lower bridge single tube 2012 face the same direction. Fig.41 As shown in the figure, the source power terminal and the drain power terminal of the upper bridge single tube 2011 and the lower bridge single tube 2012 both point to the +y direction of the figure. At this time, the upper bridge single tube 2011 and the lower bridge single tube 2012 are in a head-to-tail position relationship, the first drain power terminal D1 and the second drain power terminal D2 are distributed along the same straight line, and the first source power terminal S1 and the second source power terminal S2 are distributed along the same straight line.

[0448] Optionally, refer to Figure 42 to Figure 45 , the half-bridge power unit 20 also includes a fourth busbar 205;

[0449] One end of the fourth busbar 205 is electrically connected to the first drain power terminal D1 , and the other end of the fourth busbar 205 extends to form the DC positive terminal DC+.

[0450] Specifically, in the embodiment of the present invention, when the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged in the same direction, the half-bridge power unit 20 may further include: Figure 42 to Figure 45 The fourth busbar 205 shown may be a conductive sheet with a protruding connection portion made by stamping and bending a copper sheet. The connection portion at one end of the fourth busbar 205 is electrically connected to the first drain power terminal D1, and the other end extends from the half-bridge power unit 20 to be exposed to the outside to form a DC positive terminal DC+. The thin sheet-like fourth busbar 205 can reduce the space occupied by the positive connection structure and provide a larger flow area.

[0451] Optionally, refer to Fig.42 and Fig.43 The other end of the fourth busbar 205 extends to the opposite side of the first drain power terminal D1, crosses the upper bridge single tube 2011 and then extends out to form the DC positive terminal DC+.

[0452] Specifically, combined Figures 42 to 43In one embodiment, when the fourth busbar 205 is used for connection, after the first end of the fourth busbar 205 is welded and fixed to the first drain power terminal D1, the second end of the fourth busbar 205 extends in the opposite direction toward the opposite side of the first drain power terminal D1 along the -y direction shown in the figure until it crosses the upper bridge single tube 2011, and then extends from the edge of the upper bridge single tube 2011 to form a DC positive terminal DC+ exposed outside the half-bridge power unit 20. It can be seen that the span of the fourth busbar 205 is the size of the upper bridge single tube 2011 in the y direction.

[0453] Optionally, refer to Fig.44 and Fig.45 The other end of the fourth busbar 205 extends in the extension direction of the first drain power terminal D1 to extend to form the DC positive terminal DC+.

[0454] Specifically, combined Figure 44 to Figure 45 In one embodiment, when the fourth busbar 205 is used for connection, since the first drain power terminal D1 is already located at the edge of the half-bridge power subunit 201, at this time, after the first end of the fourth busbar 205 is welded and fixed to the first drain power terminal D1, the first end of the fourth busbar 205 just extends in the extension direction of the first drain power terminal D1, that is, extends along the +y direction shown in the figure, thereby forming a DC positive terminal DC+ exposed outside the half-bridge power unit 20. It can be seen that this fourth busbar 205 does not need to cross any single tube, and the structural size can be more compact.

[0455] Optionally, refer to Figure 42 to Figure 45 , the half-bridge power unit 20 further includes a fifth busbar 206;

[0456] One end of the fifth busbar 206 is electrically connected to the second source power terminal S2 , and the other end of the fifth busbar 206 extends to form the DC negative terminal DC−.

[0457] Specifically, in the embodiment of the present invention, when the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged in the same direction, the half-bridge power unit 20 may further include: Figure 42 to Figure 45 The fifth busbar 206 shown may be a conductive sheet with a protruding connection portion made by stamping and bending a copper sheet. The connection portion at one end of the fifth busbar 206 is electrically connected to the second source power terminal S2, and the other end extends from the half-bridge power unit 20 to be exposed to the outside to form a DC negative terminal DC-. The thin sheet-shaped fifth busbar 206 can reduce the space occupied by the negative electrode connection structure and provide a larger current flow area.

[0458] Optionally, refer to Fig.42 and Fig.43The other end of the fifth busbar 206 extends to the opposite side of the second source power terminal S2, and sequentially crosses the lower bridge single tube 2012 and the upper bridge single tube 2011 to form the DC negative terminal DC-.

[0459] Specifically, combined Figures 42 to 43 As shown in the figure, in one embodiment, when the fifth busbar 206 is used for connection, after the first end of the fifth busbar 206 is welded and fixed to the second source power terminal S2, the second end of the fifth busbar 206 extends in the opposite direction toward the opposite side of the second source power terminal S2 along the -y direction shown in the figure, sequentially crossing the lower bridge single tube 2012 and the upper bridge single tube 2011, and then extending from the edge of the upper bridge single tube 2011 to form a DC negative terminal DC- exposed outside the half-bridge power unit 20. It can be seen that the span of this fifth busbar 206 is the sum of the dimensions of the upper bridge single tube 2011 and the lower bridge single tube 2012 in the y direction.

[0460] Optionally, refer to Fig.44 and Fig.45 The other end of the fifth busbar 206 extends to the same side of the second source power terminal S2, crosses over the upper bridge single tube 2011 and extends to form the DC negative terminal DC-.

[0461] Specifically, combined Figure 44 to Figure 45 As shown in the figure, in one embodiment, when the fifth busbar 206 is used for connection, after the first end of the fifth busbar 206 is welded and fixed to the second source power terminal S2, the second end of the fifth busbar 206 extends along the +y direction shown in the figure to the same side of the second source power terminal S2 until it crosses the upper bridge single tube 2011, and then emerges from the edge of the upper bridge single tube 2011 to form a DC negative terminal DC- exposed outside the half-bridge power unit 20. It can be seen that the span of this fifth busbar 206 is the size of the upper bridge single tube 2011 in the y direction.

[0462] Optionally, refer to Figure 42 to Figure 45 , the half-bridge power unit further includes a sixth busbar 207;

[0463] One end of the sixth busbar 207 is electrically connected to the first source power terminal S1 and the second drain power terminal D2 at the same time, and the other end of the sixth busbar 207 extends out to form the AC output terminal AC_out.

[0464] Specifically, in the embodiment of the present invention, when the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged in the same direction, the half-bridge power unit 20 may further include: Figure 42 to Figure 45The sixth busbar 207 shown may be a conductive sheet with a protruding connection portion made by stamping and bending a copper sheet. The connection portion at one end of the sixth busbar 207 is electrically connected to the first source power terminal S1 and the second drain power terminal D2 at the same time, and the other end extends from the half-bridge power unit 20 to be exposed to the outside to form an AC output terminal AC_out. The thin sheet-like sixth busbar 207 can reduce the space occupied by the output connection structure and provide a larger current flow area.

[0465] Optionally, refer to Fig.42 and Fig.43 The other end of the sixth busbar 207 extends to the same side of the first source power terminal S1, crosses the lower bridge single tube 2012, is electrically connected to the second drain power terminal D2, and then extends out to form the AC output terminal AC_out.

[0466] Specifically, combined Figures 42 to 43 In one embodiment, when the sixth busbar 207 is used for connection, after the first end of the sixth busbar 207 is welded and fixed to the first source power terminal S1, the second end of the sixth busbar 207 extends along the +y direction shown in the figure, toward the same side of the first source power terminal S1, until it crosses the lower bridge single tube 2012, and is electrically connected to the second drain power terminal D2 at the edge of the lower bridge single tube 2012, and then extends to form the AC output terminal AC_out. It can be seen that the span of this sixth busbar 207 is the size of the lower bridge single tube 2012 in the y direction.

[0467] Optionally, refer to Fig.44 and Fig.45 One end of the sixth busbar 207 is electrically connected to the first source power terminal S1, and the other end of the sixth busbar 207 extends to the opposite side of the first source power terminal S1, crosses the upper bridge single tube 2011 and is electrically connected to the second drain power terminal D2, and then crosses the lower bridge single tube 2012 and extends out to form the AC output terminal AC_out.

[0468] Specifically, combined Figures 44 to 45 In one embodiment, when the sixth busbar 207 is used for connection, after the first end of the sixth busbar 207 is welded and fixed to the first source power terminal S1, the second end of the sixth busbar 207 extends in the opposite direction toward the opposite side of the first source power terminal S1 along the -y direction shown in the figure, until it crosses the upper bridge single tube 2011, and then is electrically connected to the second drain power terminal D2 between the upper bridge single tube 2011 and the lower bridge single tube 2012, and then continues to extend across the lower bridge single tube 2012 and extends out to form the AC output terminal AC_out. It can be seen that the span of this sixth busbar 207 is the sum of the dimensions of the upper bridge single tube 2011 and the lower bridge single tube 2012 in the y direction.

[0469] Optionally, refer to Figure 42 to Figure 45 The fourth busbar 205, the fifth busbar 206 and the sixth busbar 207 are stacked and insulated from each other.

[0470] Specifically, combined Figure 42 to Figure 45 As shown in the figure, the fourth busbar 205, the fifth busbar 206 and the sixth busbar 207 are stacked together, and an insulating layer is provided between the two adjacent layers of busbars to avoid short circuits between power terminals. It is easy to understand that in the parts near the power terminals, each busbar is designed with a gap or slot to avoid each other to avoid structural interference.

[0471] Optionally, refer to Figure 46 to Figure 48 The number of the half-bridge power subunits 201 is at least two, at least two of the half-bridge power subunits 201 are connected in parallel, at least two of the upper bridge single tubes 2011 are arranged along a first straight line, and at least two of the lower bridge single tubes are arranged along a second straight line, and the first straight line is parallel to the second straight line.

[0472] Specifically, if Fig.46 and Fig.47 As shown in FIG. 1 , whether the upper bridge single tube 2011 and the lower bridge single tube 2012 are arranged relative to each other or in the same direction, when the number of the half-bridge power subunits 201 is two or more, the upper bridge single tube 2011 and the lower bridge single tube 2012 can be arranged in the same direction. Fig.46 or Fig.47 As shown in FIG. 1 , at least two upper bridge single tubes 2011 are arranged along a first straight line L1, at least two lower bridge single tubes 2012 are arranged along a second straight line L2, and the upper bridge single tubes 2011 and the lower bridge single tubes 2012 aligned in the upper and lower positions are arranged according to Fig.35 After the half-bridge power sub-unit 201 is formed in series, the adjacent half-bridge power sub-units 201 are connected in series according to Fig.48 , thereby forming a half-bridge power unit 20 suitable for high power requirements. In this half-bridge power unit 20, more busbars will be used for connection accordingly. Due to the aforementioned arrangement and connection method, the total parasitic inductance introduced by multiple busbars will decrease as the number of parallel single tubes increases, and the busbar current capacity will increase as the number of parallel single tubes increases. Therefore, this half-bridge power unit 20 has a higher current expansion capacity.

[0473] Optionally, the half-bridge power unit 20 also includes a DC capacitor, which is arranged at one end of a group of the upper bridge single tube 2011 and the lower bridge single tube 2012 in the half-bridge power sub-unit 201, the positive electrode of the DC capacitor is electrically connected to the DC positive terminal DC+, and the negative electrode of the DC capacitor is electrically connected to the DC negative terminal DC-.

[0474] Specifically, for the aforementioned Figures 37 to 45 In the three types of half-bridge power units 20 shown, a DC capacitor can also be connected to one end of the arrangement direction of the upper bridge single tube 2011 and the lower bridge single tube 2012 in the corresponding half-bridge power sub-unit 201. Fig.40 In this half-bridge power unit 20, the DC capacitor can be connected on the -y direction side. Fig.43 In this half-bridge power unit 20, the DC capacitor can be connected on the -y direction side. Fig.45 In this half-bridge power unit 20, the DC capacitor can be connected on the +y direction side. Combining the top views of the three half-bridge power units 20, it is easy to understand that when the DC capacitor is arranged along the y direction, the distance between each single tube and the DC capacitor is basically the same, and they have the same commutation inductance, so there will be no dynamic uneven current problem.

[0475] Optionally, refer to Fig.34 , the upper bridge single tube 2011 further includes a first driving gate terminal G1, and the lower bridge single tube 2012 further includes a second driving gate terminal G2;

[0476] The width of the source power terminal and the drain power terminal of any single tube of the upper bridge single tube 2011 and the lower bridge single tube 2012 is greater than the width of the corresponding driving gate terminal.

[0477] Specifically, if Fig.34 As shown in the figure, for the upper bridge single tube 2011, it also includes a first driving gate terminal G1, and the widths of the first source power terminal S1 and the first drain power terminal D1 are both greater than the width of the first driving gate terminal G1, and are in the shape of a rectangular sheet, which can provide a more sufficient welding overlap area. This upper bridge single tube 2011 can be suitable for using a laser welding process to melt and weld the power terminal of the single tube and the busbar into one, and the mechanical connection stability and electrical performance are better.

[0478] Similar to the upper bridge single tube 2011, the lower bridge single tube 2012 also includes a second driving gate terminal G2. The widths of the second source power terminal S2 and the second drain power terminal D2 are both greater than the width of the second driving gate terminal G2. They are shaped like rectangular sheets, which can provide a more sufficient welding overlap area. This lower bridge single tube 2012 can be used to use a laser welding process to melt and weld the power terminal of the single tube to the busbar into one, and the mechanical connection stability and electrical performance are better.

[0479] Optionally, refer to Fig.34 , the upper bridge single tube 2011 further includes a first driving source terminal DS1, and the lower bridge single tube 2012 further includes a second driving source terminal DS2;

[0480] The width of the source power terminal and the drain power terminal of any single tube of the upper bridge single tube 2011 and the lower bridge single tube 2012 is greater than the width of the corresponding driving source terminal.

[0481] Specifically, if Fig.34 As shown in the figure, in some devices, the upper bridge single tube 2011 used also includes a first driving source terminal DS1, the width of the first source power terminal S1 and the first drain power terminal D1 are both larger than the width of the first driving source terminal DS1, and the shape is a rectangular sheet, which can provide a more sufficient welding overlap area. This upper bridge single tube 2011 can be suitable for using a laser welding process to melt and weld the power terminal of the single tube and the busbar into one, and the mechanical connection stability and electrical performance are better.

[0482] Similar to the upper bridge single tube 2011, the lower bridge single tube 2012 also includes a second driving source terminal DS2. The widths of the second source power terminal S2 and the second drain power terminal D2 are both greater than the width of the second driving source terminal DS2. They are shaped like rectangular sheets, which can provide a more sufficient welding overlap area. This lower bridge single tube 2012 is suitable for using a laser welding process to melt and weld the power terminal of the single tube to the busbar into one, and the mechanical connection stability and electrical performance are better.

[0483] Optionally, refer to Fig.34 The source power terminal and the drain power terminal of any single tube of the upper bridge single tube 2011 and the lower bridge single tube 2012 extend along the first direction, and the driving source terminal and the driving gate terminal extend along the second direction. The first direction and the second direction are located in two mutually orthogonal planes.

[0484] Specifically, if Fig.34 Taking the upper bridge single tube 2011 as an example, in the upper bridge single tube 2011 of the embodiment of the present invention, the first source power terminal S1 and the first drain power terminal D1 extend along the first direction +y, and the first driving source terminal DS1 and the first driving gate terminal G1 extend along the second direction +z, which is more convenient for the stacking of the busbars and can avoid the half-bridge power unit 20 occupying too much area in the horizontal plane. The lower bridge single tube 2012 has the same structure as the upper bridge single tube 2011, and will not be described here.

[0485] Reference Fig.49 , the embodiment of the present invention further provides a three-phase full-bridge power unit, the three-phase full-bridge power unit includes any of the aforementioned half-bridge power units 20;

[0486] The number of the half-bridge power units 20 is three, and the three half-bridge power units 20 correspond to three different phase lines of the three-phase alternating current respectively.

[0487] Specifically, if Fig.49As shown in the figure, in the embodiment of the present invention, the three half-bridge power units 20 mentioned above can be integrated together to form a three-phase full-bridge power unit matching the three-phase alternating current, and the AC output terminal AC_out of each half-bridge power unit 20 corresponds to three different phase lines of the three-phase alternating current, namely, the U phase, the V phase and the W phase, thereby improving the stability of the three-phase alternating current control process.

[0488] Optionally, refer to Fig.49 , the three-phase full-bridge power unit also includes a driving board 21 and a heat dissipation substrate 22;

[0489] The driving board 21 is disposed above the half-bridge power unit 20 and is electrically connected to the driving terminal of each half-bridge power sub-unit 201;

[0490] The heat dissipation substrate 22 is disposed below the half-bridge power unit 20 and is sintered and fixed to the bottom of the upper bridge single tube 2011 and the lower bridge single tube 2012 .

[0491] Specifically, if Fig.49 As shown in the diagram, in the embodiment of the present invention, in the three-phase full-bridge power unit, the driving board 21 can be arranged above the half-bridge power unit 20 and electrically connected to the driving terminal of the half-bridge power sub-unit 201, and the heat dissipation substrate 22 can be arranged below the half-bridge power unit 20 and sintered and fixed to the bottom of the upper bridge single tube 2011 and the lower bridge single tube 2012, thereby helping to improve the heat dissipation performance.

[0492] Optionally, bosses are provided on the heat dissipation substrate 22 in areas corresponding to the upper bridge single tube 2011 and the lower bridge single tube 2012 , and the bottoms of the upper bridge single tube 2011 and the lower bridge single tube 2012 are sintered and fixed to the bosses at corresponding positions.

[0493] Specifically, in an embodiment of the present invention, according to the creepage distance determined by the circuit design calculation results, bosses can be set on the heat dissipation substrate 22 in the areas corresponding to the upper bridge single tube 2011 and the lower bridge single tube 2012, and the height size of the bosses can be used to control the creepage distance between the upper bridge single tube 2011, the lower bridge single tube 2012 and the driving board 21 to meet the design requirements.

[0494] An embodiment of the present invention further provides a motor controller, which includes any one of the three-phase full-bridge power units mentioned above.

[0495] By applying the above three-phase full-bridge power unit to a motor controller, that is, an inverter, the smoothness of the motor operation can be improved.

[0496] The embodiment of the present invention further provides a vehicle, the vehicle comprising the motor controller. By using the motor controller in the vehicle, it is helpful to improve the driving comfort of the vehicle and the driving experience.

[0497] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0498] It is easy for a person skilled in the art to think that any combination of the above embodiments is feasible, so any combination of the above embodiments is an implementation scheme of the present invention. However, due to space limitations, this specification will not describe them in detail here.

[0499] In the description provided herein, a large number of specific details are described. However, it is understood that embodiments of the present invention can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0500] Similarly, it should be understood that in order to streamline the present invention and aid in understanding one or more of the various inventive aspects, in the above description of exemplary embodiments of the present invention, various features of the present invention are sometimes grouped together into a single embodiment, figure, or description thereof. However, this disclosed method should not be interpreted as reflecting the intention that the claimed invention requires more features than those expressly recited in each claim. Rather, as reflected in the claims, inventive aspects lie in less than all of the features of the individual embodiments previously disclosed. Therefore, the claims that follow the detailed description are hereby expressly incorporated into the detailed description, with each claim itself serving as a separate embodiment of the present invention.

[0501] Those skilled in the art will appreciate that the modules in the devices in the embodiments may be adaptively changed and arranged in one or more devices different from the embodiments. The modules or units or components in the embodiments may be combined into one module or unit or component, and in addition they may be divided into a plurality of submodules or subunits or subcomponents. Except that at least some of such features and / or processes or units are mutually exclusive, all features disclosed in this specification (including the accompanying claims, abstracts and drawings) and all processes or units of any method or device disclosed in this manner may be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstracts and drawings) may be replaced by an alternative feature providing the same, equivalent or similar purpose.

[0502] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present invention and form different embodiments. For example, in the claims, any one of the claimed embodiments may be used in any combination.

[0503] It should be noted that the above embodiments illustrate the present invention rather than limit it, and that those skilled in the art may devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference symbol between brackets shall not be construed as a limitation on the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "one" or "an" preceding an element does not exclude the presence of a plurality of such elements. The present invention may be implemented by means of hardware comprising a number of different elements and by means of a suitably programmed computer. In a unit claim enumerating a number of devices, several of these devices may be embodied by the same hardware item. The use of the words first, second, and third, etc., does not indicate any order. These words may be interpreted as names.

[0504] Fourth specific embodiment

[0505] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that unless otherwise specifically stated, the relative arrangement of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present application.

[0506] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the present application, its application, or uses.

[0507] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0508] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0509] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0510] The present application embodiment provides a half-bridge power unit, such as Fig.50 As shown, the half-bridge power unit includes:

[0511] The AC output pole busbar 33 has a first surface;

[0512] At least one half-bridge power subunit, each half-bridge power subunit is arranged on the first surface side of the AC output pole busbar 33, and each half-bridge power subunit at least includes a first semiconductor power device 211 and a second semiconductor power device 212;

[0513] The source power terminal 12 and the drain power terminal 11 of the first semiconductor power device 211 are respectively located at different sides along the first direction; the source power terminal 22 and the drain power terminal 21 of the second semiconductor power device 212 are respectively located at different sides along the first direction;

[0514] The source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are commonly connected to the first surface side of the AC output pole busbar 33 .

[0515] It should be noted that the embodiment of the present application does not limit the number of semiconductor power sub-units included in the semiconductor power unit. Fig.50 In the figure, the first direction is specifically the direction from the drain power terminal 11 of the first semiconductor power device 211 to the source power terminal 12 as an example. Fig.51a As shown, the source power terminal 12 and the drain power terminal 11 are respectively located on different side surfaces in the first direction, which means that the semiconductor power device 211 has two opposite side surfaces in the first direction, and the source power terminal 12 and the drain power terminal 11 are respectively arranged on these two side surfaces.

[0516] In one embodiment of the present application, the AC output busbar 33 is generally made of copper. The AC output busbar 33 is provided with corresponding connection terminals to connect the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212. In addition, the AC output busbar 33 has a first surface and a second surface, and the first surface and the second surface of the AC output busbar 33 are specifically the upper and lower surfaces of the AC output busbar 33.

[0517] The first semiconductor power device 211 and the second semiconductor power device 212 are generally semiconductor power devices with the same specifications.

[0518] In one example, the first semiconductor power device 211 may be a SiC single tube, and a plurality of SiC chips may be packaged inside the SiC single tube. Also, the appearance structure of the first semiconductor power device 211 may be as follows: Fig.51a and Fig.51bAs shown, it includes: a drain power terminal 11, a source power terminal 12, a first source drive terminal 13 and a first gate drive terminal 14. The drain power terminal 11, the source power terminal 12, the first source drive terminal 13 and the first gate drive terminal 14 are usually made of copper.

[0519] And, if Fig.51b The bottom view of the first semiconductor power device 211 is shown, and a first heat conducting layer 15 is usually provided at the bottom of the first semiconductor power device 211. The first heat conducting layer 15 is usually made of copper material and is insulated from the inside of the first semiconductor power device 211 by a ceramic layer, and has an excellent heat conducting effect.

[0520] Furthermore, the source power terminal 22 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are connected to the first surface side of the AC output busbar 33 in the following manner: Fig.50 As shown, the source power terminal 12 of the first semiconductor power device 211 is connected to the drain power terminal 21 of the second semiconductor power device 212 to form a half-bridge midpoint of the half-bridge power subunit. On this basis, the half-bridge midpoint is connected to the first surface of the AC output pole busbar 33.

[0521] Furthermore, in one embodiment of the present application, Fig.50 As shown, the AC output busbar 33 is provided with a groove 332 , and the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 221 are connected to the outer bottom of the groove 332 .

[0522] In an embodiment of the present application, the groove 332 provided on the AC output busbar 33 can increase the contact area of ​​the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 with the AC output busbar 33, thereby facilitating the connection of the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 to the AC output busbar 33.

[0523] In addition, in one embodiment of the present application, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 11 of the first semiconductor power device 211 have the same structure. Based on this, when the first semiconductor power device 211 and the second semiconductor power device 212 have the same specifications, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 have the same height. Therefore, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are flush. In this way, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 can be directly laser welded or sintered.

[0524] In the embodiment of the present application, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 are connected to the first side of the AC output pole busbar 33, so that the AC output pole busbar 33 leads the midpoint of the half bridge to the outside. Since the AC output pole busbar 33 is arranged close to at least one half-bridge power sub-unit, other busbars of the half-bridge power unit, such as the DC positive busbar 31 connected to the drain power terminal 11 of the first semiconductor power device 211, and the DC negative busbar 32 connected to the source power terminal 22 of the second semiconductor power device 212, can form a shielding layer, thereby suppressing the electromagnetic interference generated by the AC output pole busbar 33. In addition, there is no need to set openings on other busbars for the AC output pole busbar 33 to lead the midpoint of the half bridge to the outside. This reduces the difficulty and complexity of processing the half-bridge power unit.

[0525] The embodiment of the present application provides a half-bridge power unit, including: an AC output pole busbar, the AC output pole busbar having a first side; at least one half-bridge power sub-unit, each half-bridge power sub-unit is arranged on the first side of the AC output pole busbar, and each half-bridge power sub-unit includes at least a first semiconductor power device and a second semiconductor power device; the source power terminal and the drain power terminal of the first semiconductor power device are respectively located on different sides along the first direction; the source power terminal and the drain power terminal of the second semiconductor power device are respectively located on different sides along the first direction; the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are commonly connected to the first side of the AC output pole busbar. In the embodiment of the present application, the source power terminal of the first semiconductor power device and the drain power terminal of the second semiconductor power device are connected to the first surface of the AC output pole busbar, so that the AC output pole busbar leads the midpoint of the half-bridge to the outside. Since the AC output pole busbar is arranged close to at least one half-bridge power subunit, other busbars of the half-bridge power unit, such as the DC positive busbar connected to the drain power terminal of the first semiconductor power device and the DC negative busbar connected to the source power terminal of the second semiconductor power device, can form a shielding layer, thereby suppressing the electromagnetic interference generated by the AC output pole busbar. In addition, it is not necessary to set openings on other busbars for the AC output pole busbar to lead the half-bridge midpoint to the outside. This reduces the difficulty and complexity of processing the half-bridge power unit.

[0526] In one embodiment of the present application, Fig.50 As shown, the first semiconductor power device 211 and the second semiconductor power device 212 are arranged side by side along a first direction, and the source power terminal 11 of the first semiconductor power device 211 and the drain power terminal 12 of the second semiconductor power device 211 are arranged opposite to each other; the first direction is the direction in which the drain power terminal 11 of the first semiconductor power device 211 points to the source power terminal 12.

[0527] In the embodiment of the present application, the first direction is the direction in which the drain power terminal 11 of the first semiconductor power device 211 points to the source power terminal 12, the source power terminal 12 and the drain power terminal 11 of the first semiconductor power device 211 are respectively located on different sides along the first direction, the source power terminal 22 and the drain power terminal 21 of the second semiconductor power device 212 are respectively located on different sides along the first direction, and the first semiconductor power device 211 and the second semiconductor power device 212 are arranged side by side along the first direction. Therefore, Fig.50As shown, the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 can be arranged in close proximity, and the first semiconductor power device 211 and the second semiconductor power device 212 can be arranged in a straight line. This makes the structure of the half-bridge power unit provided in the embodiment of the present application regular, and facilitates the processing of the half-bridge power unit provided in the embodiment of the present application.

[0528] In one embodiment of the present application, Fig.50 As shown, the half-bridge power unit provided in the embodiment of the present application also includes:

[0529] The DC positive busbar 31, the drain power terminal 11 of the first semiconductor power device 211 is electrically connected to the DC positive busbar 31. The end of the DC positive busbar 31 may be provided with a bent portion, and the bent portion is used to contact the drain power terminal 11. Specifically, the electrical connection can be formed by laser welding.

[0530] In combination with the above embodiment, in one embodiment of the present application, Fig.50 As shown, the half-bridge power unit provided in the embodiment of the present application also includes:

[0531] The DC negative busbar 32, the source power terminal 16 of the second semiconductor power device 212 is electrically connected to the DC negative busbar 32. The end of the DC negative busbar 32 may be provided with a bent portion, and the bent portion is used to be electrically connected to the source power terminal 22 of the second semiconductor power device 212. Specifically, the source power terminal 22 may be laser welded to the bent portion to form an electrical connection.

[0532] In combination with the above embodiment, in one embodiment of the present application, Fig.50 As shown, the DC positive busbar 31 and the DC negative busbar 32 are located on the second surface side of the AC output pole busbar 33, and the first surface side of the AC output pole busbar and the second surface side of the AC output pole busbar are two opposite upper and lower surfaces of the AC output pole busbar 33;

[0533] The DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33 are spaced apart and arranged in parallel in a second direction. The second direction is the direction from the half-bridge power subunit to the AC output busbar 33, and the second direction is perpendicular to the first direction.

[0534] In the embodiment of the present application, the positions of the DC positive busbar 31 and the DC negative busbar 32 can be interchanged. That is, the DC positive busbar 31 can be located between the DC negative busbar 32 and the AC output busbar 33; or the DC negative busbar 32 can be located between the DC positive busbar 31 and the AC output busbar 33. The following embodiments are described by taking the DC positive busbar 31 located between the DC negative busbar 32 and the AC output busbar 33 as an example.

[0535] In one example, taking the semiconductor power device as an NMOS tube as an example, the equivalent circuit diagram of a half-bridge power sub-unit in the half-bridge power unit provided in the embodiment of the present application is as follows: Fig.52a The AC output pole busbar is not shown. Fig.52a The dashed line with an arrow in the middle is the current direction in the half-bridge power subunit.

[0536] In the above Fig.52a Based on the above, taking the half-bridge power unit including 4 half-bridge power sub-units as an example, the equivalent circuit diagram of the half-bridge power unit is as follows: Fig.52b Among them, the four half-bridge power subunits are respectively a half-bridge power subunit 1 21 - 1 , a half-bridge power subunit 21 - 2 , a half-bridge power subunit 3 21 - 3 and a half-bridge power subunit 4 21 - 4 . Fig.52b The dotted line with an arrow pointing rightwards is the current direction on the DC positive busbar 31 , and the dotted line with an arrow pointing leftwards is the current direction on the DC negative busbar 32 .

[0537] In the embodiments of the present application, Fig.52a As shown, the current direction in the first semiconductor power device 211 and the second semiconductor device 212 is Fig.52a The direction of the current in the DC positive busbar 31 and the DC negative busbar 32 is from top to bottom. Fig.52a The bottom-to-top direction in the half-bridge power subunit, i.e., the direction of the semiconductor power devices of the half-bridge power subunit, is opposite to the current direction in the DC positive busbar 31 and the DC negative busbar 32. At the same time, the DC positive busbar 31 and the DC negative busbar 32 are adjacent to each other. Therefore, the DC positive busbar 31 and the DC negative busbar 32 are spaced closely together. Based on this, the DC positive busbar 31 and the DC negative busbar 32 can achieve a good mutual inductance cancellation effect, thereby reducing parasitic inductance.

[0538] At the same time, if Fig.52b The current in the DC positive busbar 31 and the current in the DC negative busbar 32 are in opposite directions, so that the parasitic inductance introduced by the DC positive busbar 31 and the DC negative busbar 32 can be reduced, thereby improving the dynamic uneven current effect of the half-bridge power unit during the switching process.

[0539] In one embodiment of the present application, the DC positive busbar 31 is located between the DC negative busbar 32 and the AC output busbar 33 .

[0540] Alternatively, the DC negative busbar 32 is located between the DC positive busbar 31 and the AC output busbar 33 .

[0541] In the embodiment of the present application, the positions of the DC positive busbar 31 and the DC negative busbar 32 can be interchanged, which makes the configuration of the half-bridge power unit provided in the embodiment of the present application highly flexible.

[0542] In one embodiment of the present application, the AC output pole busbar 33 leads out a third external terminal 331 in a third direction. The third direction is perpendicular to the first direction and the second direction. The third direction, the second direction and the first direction constitute a spatial rectangular coordinate system.

[0543] In the embodiments of the present application, Fig.54 , Fig.55 As shown, the AC output pole busbar 33 leads out a third external terminal 331 in the third direction, so as to connect the half-bridge midpoint of the two terminals to the external load through the AC output pole busbar 33. Since the third external terminal is not in the same direction as the source power terminal and the drain power terminal of the semiconductor power device, and can be perpendicular to each other, the external load can be set on both sides of the third direction of the half-bridge power unit, further optimizing the structure of the half-bridge power unit and the full-bridge power unit.

[0544] In one embodiment of the present application, the drain power terminal 11 of the first semiconductor power device 211 is connected to the DC positive busbar 31, and the DC positive busbar 31 leads to the first external terminal 311 in a third direction; the third direction is perpendicular to the first direction and the second direction.

[0545] In the embodiments of the present application, Fig.54 As shown, the DC positive busbar 31 leads out a first external terminal 311 in the third direction, so as to facilitate the connection of an external device to the drain power terminal 11 of the first semiconductor power device 211 connected to the DC positive busbar 31 .

[0546] Furthermore, since the DC positive busbar 31 leads out the first external terminal 311 in the third direction, and the drain power terminal 11 of the first semiconductor power device 211 connected to the DC positive busbar 31 is located in the first direction, the first external terminal 311 and the end of the DC positive busbar 31 connected to the drain power terminal 11 of the first semiconductor power device 211 are located on different sides.

[0547] In one embodiment of the present application, the source power terminal 16 of the second semiconductor power device 212 is connected to the DC negative busbar 32 , and the DC negative busbar 32 leads out a second external terminal 321 in the third direction.

[0548] In the embodiments of the present application, Fig.54 As shown, the DC negative busbar 32 leads out a second external terminal 321 in the third direction, so as to facilitate the connection of an external device to the source power terminal 22 of the second semiconductor power device 212 connected to the DC negative busbar 32 .

[0549] Furthermore, since the DC negative busbar 32 leads out the second external terminal 321 in the third direction, and the source power terminal 22 of the second semiconductor power device 212 connected to the DC negative busbar 32 is located in the first direction, the second external terminal 321 and the end of the DC negative busbar 32 connected to the source power terminal 22 of the second semiconductor power device 212 are located on different sides.

[0550] In one embodiment of the present application, Fig.54 As shown, the first external terminal 311 and the second external terminal 312 are disposed on a first side of the third direction.

[0551] In the embodiment of the present application, since the first external terminal 311 and the second external terminal 312 are generally used to connect the same device, the first external terminal 311 and the second external terminal 312 are arranged on the first side of the third direction, that is, the first external terminal 311 and the second external terminal 312 are arranged on the same side, which facilitates the connection of the device connecting the first external terminal 311 and the second external terminal 312 to the half-bridge power unit provided in the embodiment of the present application.

[0552] In one embodiment of the present application, Fig.54 As shown, the third external terminal 331 is disposed on the second side of the third direction.

[0553] In the embodiment of the present application, the third external terminal 311 is located on the opposite side to the first external terminal 311 for connecting an external load, so that the capacitor and the external load are respectively arranged on both sides of the half-bridge power unit in the third direction. In this way, the size of the power semiconductor power unit can be optimized.

[0554] In one embodiment of the present application, Fig.55 As shown, the half-bridge power unit provided in the embodiment of the present application includes a capacitor 1, wherein:

[0555] A first end of the capacitor 1 is electrically connected to the first external terminal 311 , and a second end of the capacitor 1 is electrically connected to the second external terminal 321 .

[0556] It should be noted that in the embodiments of the present application, Fig.55 The relative position relationship between capacitor 1 and the half-bridge power unit is shown in the figure, but the electrical connection between capacitor 1 and the second external terminal 321 and the first external terminal 311 is not shown. The first external terminal 311 and the second external terminal 321 are arranged on the same side in the third direction, and are respectively connected to the positive and negative electrodes of the capacitor. In addition, the third external terminal 311 and the first external terminal 311 are located on the opposite side, and are used to connect an external load, so that the capacitor and the external load are respectively arranged on both sides of the half-bridge power unit in the third direction, further optimizing the module structure.

[0557] In the embodiment of the present application, the capacitor 1 is specifically a DC capacitor used for filtering. Based on this, the half-bridge power unit provided in the embodiment of the present application can also achieve filtering.

[0558] In one embodiment of the present application, Fig.50 As shown, a first insulating layer 4 is provided between the AC output pole busbar 33 and the DC negative pole busbar 32, and a second insulating layer 5 is provided between the DC positive pole busbar 31 and the DC negative pole busbar 32;

[0559] Alternatively, a first insulating layer 4 is provided between the DC negative busbar 32 and the DC positive busbar 31 , and a second insulating layer 5 is provided between the DC positive busbar 31 and the AC output busbar 33 .

[0560] In the embodiment of the present application, Fig.50 Taking the DC positive busbar 31 as an example, which is arranged between the DC negative busbar 32 and the AC output busbar 33, an insulating layer is arranged between the AC output busbar 33 and the DC positive busbar 31, and between the DC positive busbar 31 and the DC negative busbar 32. In this way, a short circuit between any one of the busbars (ie, the AC output busbar 33, the DC positive busbar 31, and the DC negative busbar 32) can be avoided.

[0561] Furthermore, in order to prevent a short circuit between the DC positive busbar 31 and the DC negative busbar 32, which are located on the outer layer, and other devices (such as a drive board), a third insulating layer 10 may be further provided on the side of the DC positive busbar 31 and the DC negative busbar 32, which are located on the outer layer, away from the AC output busbar 33. Fig.50 As shown, when the DC negative pole busbar 32 is located at the outer layer, a third insulating layer 10 may be provided on the side of the DC negative pole busbar 32 away from the AC output pole busbar 33 .

[0562] In one embodiment of the present application, Fig.51a and Fig.53As shown, the first semiconductor power device 211 further includes a first gate driving terminal 13, which is disposed on the side of the first direction and vertically extends out along the second direction.

[0563] In the embodiment of the present application, the first semiconductor power device 211 further includes a first gate drive terminal 13 disposed on the side of the first direction. It is understandable that the first gate drive terminal 13 may be located on the same side as the drain power terminal 11 of the first semiconductor power device 211, or may be located on the same side as the source power terminal 12 of the first semiconductor power device 211.

[0564] Based on the previous embodiment, Fig.53 or Fig.54 As shown, the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 are provided with a first opening 8 , and the first gate drive terminal 13 of the first semiconductor power device 211 is led out through the first opening 8 .

[0565] In the embodiment of the present application, the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 are provided with first openings 8 , and the first openings can facilitate the external lead-out of the first gate drive terminal 13 .

[0566] On the basis of the previous embodiment, the first semiconductor power device 211 further includes a first source driving terminal 14 . The first source driving terminal 14 is disposed adjacent to the first gate driving terminal 13 , and the first source driving terminal 14 is led out from the first opening 8 .

[0567] In the embodiment of the present application, the first semiconductor power device 211 may further include a first source driving terminal 14 , which is disposed adjacent to the first gate driving terminal 13 and is led outward through the first opening 8 .

[0568] Similar to the description of the first gate drive terminal 13, the first source drive terminal 14 and the first opening 8 of the first semiconductor power device 211, in one embodiment of the present application, the second semiconductor power device 212 also includes a second gate drive terminal 23, and the second gate drive terminal 23 is arranged on the side of the first direction, and the second gate drive terminal 23 extends vertically along the second direction.

[0569] Furthermore, in one embodiment of the present application, second openings are provided on the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 , and the second gate drive terminal 23 of the second semiconductor power device 211 is led out through the second openings.

[0570] And, in one embodiment of the present application, the second semiconductor power device 211 further includes a second source driving terminal 24, the second source driving terminal 24 is disposed adjacent to the second gate driving terminal 23, and the second source driving terminal 24 is led out from the second opening together.

[0571] It should be noted that if Fig.53 and Fig.54 The second source driving terminal 24 and the second gate driving terminal 23 of the second semiconductor power device 212 can also be led out from the edges of the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33 along the second direction. In this way, it is possible to avoid setting the second opening on the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33, thereby facilitating the design of the half-bridge power unit provided in the embodiment of the present application, that is, reducing the design difficulty of the half-bridge power unit provided in the embodiment of the present application.

[0572] In one embodiment of the present application, at least any one of the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 covers at least one half-bridge power sub-unit.

[0573] It should be noted that if Fig.50 , Fig.53 and Fig.54 For example, the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33 all cover all the half-bridge power sub-units.

[0574] In the embodiment of the present application, at least one of the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33 covers at least one half-bridge power sub-unit, thereby avoiding mutual interference between the half-bridge power sub-unit and external devices.

[0575] In one embodiment of the present application, Fig.55 As shown, the half-bridge power unit includes at least two half-bridge power sub-units, and the at least two half-bridge power sub-units are arranged side by side along a third direction, wherein the third direction is perpendicular to the first direction in the plane of the first surface of the AC output pole busbar 33.

[0576] In the present application embodiment, for example Fig.55 The half-bridge power unit shown in FIG. Fig.52b As shown, each half-bridge power sub-unit in the half-bridge power unit is connected in series between capacitors 1, so that the influence of capacitor 1 on each half-bridge power sub-unit may not be completely the same.

[0577] In addition, if Fig.55As shown, the half-bridge power sub-units in the half-bridge power unit are arranged side by side along the third direction, and the first semiconductor power device 211 and the second semiconductor power device 212 in the half-bridge power sub-unit are arranged along the first direction perpendicular to the third direction, so that the structure of the half-bridge power unit is more compact, that is, the integration is high.

[0578] In one embodiment of the present application, the drain power terminal 11 of the first semiconductor power device 211 and the DC positive busbar 31, the source power terminal 16 of the second semiconductor power device 212 and the DC negative busbar 32, and the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 15 of the second semiconductor power device 212 and the AC output busbar 33 are electrically connected by laser welding.

[0579] In the embodiment of the present application, the drain power terminal 11 of the first semiconductor power device 211 and the DC positive busbar 33, the source power terminal 22 of the second semiconductor power device 212 and the DC negative busbar 32, and the source power terminal 12 of the first semiconductor power device 211 and the drain power terminal 21 of the second semiconductor power device 212 meet the laser welding requirements and can be laser welded. This makes the power semiconductor unit provided in the embodiment of the present application have the advantages of fast processing speed, high reliability of welding points, no contact resistance, local heating, etc.

[0580] In one embodiment of the present application, Fig.50 and Fig.51a As shown, the first semiconductor power device 211 includes a body 16, and the drain power terminal 11 of the first semiconductor power device 211 includes a protrusion structure 9, which is located between the connection point and the body 16, and the connection point is the connection position between the DC positive busbar 31 and the source power terminal 11 of the first semiconductor power device 211.

[0581] In the embodiment of the present application, the protruding structure 9 of the drain power terminal 11 of the first semiconductor power device 211 can also realize the positioning and limiting of the connection position between the DC positive busbar 31 and the drain power terminal 11 of the first semiconductor power device 211 .

[0582] Similarly, when the drain power terminal 21 of the second semiconductor power device 212 also includes the same protruding structure 9 , the drain power terminal 21 of the second semiconductor power device 212 can also realize the positioning and limiting of the source power terminal 12 of the first semiconductor power device 211 .

[0583] An embodiment of the present application further provides a full-bridge power unit, which includes the half-bridge power unit provided by any of the above embodiments.

[0584] In one embodiment of the present application, taking the full-bridge power unit as a three-phase full-bridge power unit, and the three half-bridge power units in the three-phase full-bridge power unit are respectively a U-phase half-bridge power unit 51, a V-phase half-bridge power unit 52, and a W-phase half-bridge power unit 53 as an example, the structural schematic diagram of the full-bridge power unit can be as follows: Fig.57 shown.

[0585] In one embodiment of the present application, in the full-bridge power unit provided in the present application, at least two half-bridge power units are arranged side by side along a first direction.

[0586] In the embodiments of the present application, Fig.57 As shown, by arranging at least two half-bridge power units side by side along the third direction, the full-bridge power unit can have a moderate aspect ratio, thereby making the structure of the full-bridge power unit more compact. The third direction is perpendicular to the first direction in the plane where the first surface of the AC output pole busbar 33 is located.

[0587] In one embodiment of the present application, Fig.51b As shown, the first semiconductor power device 211 includes a first heat-conducting layer 15, and the first semiconductor power device 211 is located between the first heat-conducting layer 15 and the AC output pole busbar 33;

[0588] Correspondingly, the second semiconductor power device 212 includes a second heat-conducting layer, and the second semiconductor power device 212 is located between the second heat-conducting layer and the AC output pole busbar 33 .

[0589] In the embodiment of the present application, the bottom surface of the first semiconductor power device 211 includes a first heat conducting layer 15. Based on this, by providing the first heat conducting layer 15 on the bottom surface, the heat dissipation of the first semiconductor power device 211 can be facilitated, thereby improving the working stability of the first semiconductor power device 211.

[0590] Similarly, the bottom surface of the second semiconductor power device 212 includes a second heat-conducting layer. Based on this, by providing the second heat-conducting layer on the bottom surface, the heat dissipation of the second semiconductor power device 212 can be facilitated, thereby improving the working stability of the second semiconductor power device 212.

[0591] In one embodiment of the present application, Fig.57 and Fig.58 As shown, the full-bridge power unit provided in the embodiment of the present application further includes a heat dissipation substrate 6, wherein:

[0592] The first heat conducting layer 19 and the second heat conducting layer in the full-bridge power unit are connected to the heat dissipation substrate 6 by welding or sintering.

[0593] In the embodiment of the present application, the full-bridge power unit also includes: Fig.57 and Fig.58The heat dissipation substrate 6 shown. The heat dissipation substrate 6 can provide mechanical support and heat dissipation for the full-bridge power unit. At the same time, the heat dissipation substrate 6 can be made of a material that matches the first heat conduction layer 15 of the first semiconductor power device 211 and the second heat conduction layer Coefficient of Thermal Expansion CTE of the second semiconductor power device 212.

[0594] In one embodiment of the present application, a boss 61 corresponding to the first semiconductor power device 211 and the second semiconductor power device 212 is provided on the heat dissipation substrate 6;

[0595] The first heat-conducting layer 19 and the second heat-conducting layer are welded to the corresponding bosses 61 on the heat-dissipating substrate 6 .

[0596] In the embodiments of the present application, Fig.58 As shown, a boss 61 corresponding to the semiconductor power unit is processed on one side of the heat dissipation substrate 6 where the full-bridge power unit is welded. This ensures that the creepage distance between the terminal on the semiconductor power unit and the heat dissipation substrate 6 meets the requirements and facilitates the installation and positioning of the full-bridge power unit.

[0597] Furthermore, a heat dissipation column 62 may be provided on a side of the heat dissipation substrate 6 away from at least two half-bridge power units for liquid cooling.

[0598] In the embodiments of the present application, the heat conducting layer of each semiconductor power device in the half-bridge power unit is connected to the heat dissipation substrate boss 61 through a sintering process, which can improve the thermal conductivity and reliability of the heat dissipation substrate 6.

[0599] In one embodiment of the present application, Fig.59 As shown, the full-bridge power unit provided in the embodiment of the present application further includes a driving board 7, wherein:

[0600] The driving board 7 is spaced apart and arranged in parallel with the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 in the second direction, and the DC positive busbar 31 and the DC negative busbar 32 are located between the driving board 7 and the AC output busbar 33 .

[0601] In the embodiments of the present application, Fig.59 As shown, the driving board 7 is covered on the outermost layer of the busbars including the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33, and is used to drive the full-bridge power unit.

[0602] In the embodiment of the present application, the AC output pole busbar 33, the DC positive pole busbar 31, the DC negative pole busbar 32 and the driving board 7 are arranged in parallel and spaced apart along the second direction. The DC positive pole busbar 31 and the DC negative pole busbar 32 can form a shielding layer to shield the electromagnetic interference of the AC output pole busbar 33. In this way, the AC output pole busbar 33 will not generate electromagnetic interference to the driving board 7, thereby improving the working stability of the full-bridge power unit.

[0603] In one embodiment of the present application, the drive board 7 covers the DC positive busbar 31 , the DC negative busbar 32 and the AC output busbar 33 .

[0604] In the embodiment of the present application, the driving board 7 covers the DC positive busbar 31, the DC negative busbar 32 and the AC output busbar 33. Based on this, the appearance structure of the full-bridge power unit provided in the embodiment of the present application is simple.

[0605] In one embodiment of the present application, the first gate driving terminal 13 and the first source driving terminal 14 of the first semiconductor power device 211 are respectively connected to the driving board 7 .

[0606] In the embodiment of the present application, the driving board 7 is connected to the first gate driving terminal 13 and the first source driving terminal 14 of the first semiconductor power device 211. Usually, a driving device is provided on the driving board 7, and the driving device is connected to the first gate driving terminal 13 and the first source driving terminal 14 of the first semiconductor power device 211 through the driving board to realize driving of the first semiconductor power device 211.

[0607] Similarly, in one embodiment of the present application, the second gate driving terminal 23 and the second source driving terminal 24 of the second semiconductor power device 212 are respectively connected to the driving board 7 .

[0608] In combination with the above-mentioned embodiment of the full-bridge power unit provided in the present application, the full-bridge power unit can be as follows Fig.59 As shown. Based on Fig.59 The full-bridge power unit shown in Fig.60 As shown, the DC positive busbar 31 and the DC negative busbar 32 form a shield between the AC output pole busbar 33 and the driving board 7. The main electric field lines emitted from the AC output pole busbar 33 cannot reach the driving board 7. Therefore, the potential jump on the AC output pole busbar 33 is not likely to affect the normal operation of the driving board.

[0609] Furthermore, based on Fig.59 The full-bridge power unit shown in Fig.61As shown, the average junction temperature of the full-bridge power unit under the layout of the embodiment of the present application is 145.4°C, the maximum junction temperature is 153.1°C, and the average junction temperature difference between the group of single tubes closest to the inlet and the group of single tubes farthest from the coolant is 17°C. From the simulation results, it can be seen that the arrangement adopted in the embodiment of the present application has better heat dissipation and temperature balancing performance. The reasons for this difference are: the water tank flow channel of the coolant in the embodiment of the present application is shorter, the overall flow resistance is reduced, and the overall heat dissipation performance can be improved; the temperature difference of the coolant at the inlet and outlet is reduced, which can improve the temperature balancing performance.

[0610] An embodiment of the present application further provides an electronic device, which includes a full-bridge power unit as provided in any of the above embodiments.

[0611] An embodiment of the present application also provides a vehicle, which includes the full-bridge power unit provided in the above embodiment.

[0612] In one embodiment of the present application, the vehicle may be a pure electric vehicle or a hybrid electric vehicle.

[0613] Although some specific embodiments of the present application have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are only for illustration, not for limiting the scope of the present application. It should be understood by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

[0614] Fifth specific embodiment

[0615] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0616] Reference below Figure 63-Figure 66 A busbar assembly according to an embodiment of the present invention is described.

[0617] Fig.63 is an overall schematic diagram of a power semiconductor device unit according to an embodiment of the present invention, Fig.64 is a cross-sectional schematic diagram of a power semiconductor device unit busbar assembly according to an embodiment of the present invention, Fig.65 is a connection diagram of a busbar assembly according to an embodiment of the present invention, Fig.66 It corresponds to Fig.65 A connection diagram of the busbar assembly from another perspective.

[0618] like Figure 63-Figure 66As shown, the busbar assembly 21 can be used for a power semiconductor device unit, wherein the power semiconductor device unit may include multiple power semiconductor devices and a driving board 23, and the busbar assembly 21 includes a DC busbar and an AC output busbar stacked along the thickness direction of the power semiconductor device unit, and the AC output pole busbar is far away from the driving board.

[0619] According to the busbar assembly 21 of the embodiment of the present invention, by adopting a layout structure in which the DC busbar and the AC output pole busbar are stacked in sequence from top to bottom along the thickness direction, the AC output pole busbar is away from the driving board, and when the power semiconductor device is working, the AC output pole busbar can be affected by the electromagnetic shielding effect from the DC busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key components, especially the driving board that is relatively close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring the stable operation of the unit.

[0620] Further, in an embodiment, the DC busbar includes a DC positive busbar and a DC negative busbar stacked along the thickness direction of the power semiconductor device unit, and the DC positive busbar is close to the driving board or the DC negative busbar is close to the driving board. That is, the DC positive busbar and the DC negative busbar can be interchanged, but the AC busbar needs to be located at the bottom layer, that is, away from the driving board.

[0621] For example, Fig.63 As shown, a DC positive busbar 210 , a DC negative busbar 212 and an AC output busbar 214 are stacked in sequence from top to bottom, wherein the DC positive busbar 210 is close to the driving board 23 , and the AC output busbar 214 is far away from the driving board 23 .

[0622] In some embodiments, the driver board 23 may refer to a circuit board or module for controlling and driving the operation of the power semiconductor device unit. The driver board 23 generally includes electronic components and circuits for providing the required control signals to ensure the normal operation of the power semiconductor device unit. The driver board 23 may be an important part of the power electronic device, used to control and manage the switching operation of the power semiconductor device to realize the function of the circuit.

[0623] In some embodiments, the busbar assembly 21 may refer to a modular electrical component, which is usually made of conductive materials, such as copper, aluminum, etc., and can be used to connect power semiconductor device units. The main functions of the busbar assembly 21 include distributing current and providing voltage connection. The DC positive busbar 210 may be a level in the busbar assembly 21, which is used to connect the positive terminal in the power semiconductor device unit. This part is designed to provide the DC positive voltage required by the circuit. The DC negative busbar 212 may be used to connect the negative terminal in the power semiconductor device unit. This part is designed to provide the DC negative voltage required by the circuit. The AC output busbar 214 is located below the DC positive busbar 210 and the DC negative busbar 212, and is usually located at the bottom layer of the busbar assembly 21. It can be used to connect the AC connection terminals in the power semiconductor device unit and transmit electrical energy to the external load 26.

[0624] In some embodiments, since the AC output pole busbar 214 is located at the bottom layer of the busbar assembly 21, the AC output pole busbar 214 can be shielded by the electromagnetic shielding effect of the DC positive pole busbar 210 and the DC negative pole busbar 212 to reduce the impact range of electromagnetic interference on components such as the drive board 23. At the same time, the DC positive pole busbar 210 and the DC negative pole busbar 212 are located in adjacent layers, so that the distance between the positive and negative pole busbars is small. This arrangement helps to enhance the mutual inductance cancellation effect, thereby reducing the commutation inductance and improving system performance.

[0625] According to the busbar assembly 21 of the embodiment of the present invention, by adopting a layout structure in which the DC busbar and the AC output pole busbar 214 are arranged along the thickness direction and the AC output pole busbar is located in the lower layer, the AC output pole busbar 214 is away from the driving board 23, and when the power semiconductor device is working, the AC output pole busbar 214 can be affected by the electromagnetic shielding effect from the DC busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key circuit components, especially the driving board 23 that is relatively close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring stable operation of the unit.

[0626] In some embodiments, the power semiconductor device unit includes multiple first power semiconductor devices 220, which can be semiconductor devices for current control, voltage regulation and power amplification, such as MOSFET (metal oxide semiconductor field effect transistor), IGBT (insulated gate bipolar transistor), etc.

[0627] like Fig.65 As shown, the DC positive busbar 210 extends along the first direction and the second direction and leads out a first DC connection terminal from a first side of the power semiconductor device unit.

[0628] The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction intersects with the second direction. For example, the first direction may be the length direction of the power semiconductor device unit, and the second direction may be the width direction of the power semiconductor device unit.

[0629] The first DC connection terminal is adapted to be connected to the first drain terminal 221 of the first power semiconductor device 220. The first drain terminal 221 may refer to a specific terminal in the first power semiconductor device 220, which is used to connect to the DC positive busbar 210 so that current can flow from the DC positive busbar 210 to the drain portion of the first power semiconductor device 220 in the power semiconductor device unit. This connection facilitates the operation of the circuit and power transmission.

[0630] In some embodiments, Fig.66 As shown, the power semiconductor device unit includes not only a first power semiconductor device 220, but also a plurality of second power semiconductor devices 230. These second power semiconductor devices 230 are generally of the same type as the first power semiconductor device 220, and are used for controlling current, regulating voltage, and power amplification. In addition, the first power semiconductor device 220 and the second power semiconductor device 230 can cooperate with each other to form a half-bridge subunit 70 of a power semiconductor device. This half-bridge subunit 70 can be used to implement specific power electronic control tasks, such as inversion, voltage or current amplification, etc.

[0631] like Fig.66 As shown, the DC negative busbar 212 extends along the first direction and the second direction and leads out a second DC connection terminal on the second side of the power semiconductor device unit, wherein the first side and the second side are opposite sides along the second direction (e.g., the width direction). The second DC connection terminal is suitable for connecting to the second source terminal 232 of the second power semiconductor device 230. The second source terminal 232 may refer to a specific terminal in the second power semiconductor device 230, which is used to connect to the DC negative busbar 212 so that current can flow from the DC negative busbar 212 to the source portion of the second power semiconductor device 230 in the power semiconductor device unit. This connection facilitates the operation of the circuit and power transmission.

[0632] In some embodiments, Fig.65As shown, the AC output pole busbar 214 extends along the first direction and the second direction and leads out the first AC connection terminal on the first side of the power semiconductor device unit, and the AC output pole busbar 214 leads out the second AC connection terminal on the second side of the power semiconductor device unit. Among them, the first AC connection terminal is suitable for connecting to the first source terminal 222 of the first power semiconductor device 220. This connection method helps to guide the output current from the first power semiconductor device 220 to the AC output pole busbar 214, and then transmit it to the external load 26 or other circuit parts. The second AC connection terminal is suitable for connecting to the second drain terminal 231 of the second power semiconductor device 230. This connection method allows the output current to be guided from the second power semiconductor device 230 to the AC output pole busbar 214, and then transmitted to the external load 26 or other circuit parts.

[0633] Therefore, the structure and connection mode of the AC output pole busbar 214 help to achieve normal operation and current transmission of the power semiconductor device unit. This layout and connection mode can be adjusted and optimized according to specific application requirements and device types to meet the requirements of different electronic devices. This helps to improve the reliability and performance of the circuit.

[0634] In some embodiments, Fig.63 As shown, the DC positive busbar 210 leads out a DC positive terminal 211 on the third side or the fourth side of the power semiconductor device unit, and the DC positive terminal 211 is suitable for connecting to the first end of the bus capacitor 24 in the power semiconductor device unit. The DC negative busbar 212 leads out a DC negative terminal 213 on the third side or the fourth side of the power semiconductor device unit, and the DC negative terminal 213 is suitable for connecting to the second end of the bus capacitor 24. The third side and the fourth side of the power semiconductor device unit are opposite sides along the first direction (e.g., the length direction). Both sides can be used to connect circuit elements and make electrical connections.

[0635] In some embodiments, the bus capacitor 24 may be an electronic component for storing charge and stabilizing voltage to ensure stable operation of the circuit. Therefore, the connection between the DC positive busbar 210, the DC negative busbar 212 and the bus capacitor 24 helps to store charge in the circuit and provide a stable power supply voltage for the electronic device.

[0636] In some embodiments, the DC negative terminal 213 and the DC positive terminal 211 are located on the same side of the power semiconductor device unit. This arrangement can reduce the overall size of the assembly, which is very helpful for the compactness and high-density layout of electronic equipment, especially for space-constrained applications such as power modules or inverters. In addition, the DC negative busbar 212 and the DC positive busbar 210 located on the same side can more easily connect the DC power supply and other circuit elements, simplify the layout design of the circuit, reduce the connection lines with longer distances, help reduce the complexity of the circuit, and reduce potential failure points. In addition, since the DC negative terminal 213 and the DC positive terminal 211 are located on the same side, the current path between them is shorter, reducing the current circulation path, helping to reduce electromagnetic interference and mutual inductance effects, and improving the anti-interference performance of the circuit.

[0637] like Fig.63 As shown, the AC output pole busbar 214 leads to an AC terminal 215 on the fourth side or the third side of the power semiconductor device unit, and the AC terminal 215 is suitable for connecting to a load 26, such as a motor, a lighting device, or other equipment requiring an AC power supply. The load 26 connected to the AC terminal 215 can receive AC power from the power semiconductor device unit. The AC terminal 215 is located on the opposite side of the device from the DC positive terminal 211 or the DC negative terminal 213. This means that they are located on different sides of the busbar assembly 21. This design can help isolate the DC and AC circuits, thereby reducing electromagnetic interference between DC and AC, and ensuring the stability and reliability of the circuit.

[0638] In some embodiments, Figure 64-Figure 66 As shown, the busbar assembly 21 further includes a first insulating layer 216, which is located between the DC positive busbar 210 and the DC negative busbar 212. The first insulating layer 216 can provide electrical isolation and insulation protection between the DC positive busbar 210 and the DC negative busbar 212 to prevent current short circuit or circuit failure.

[0639] In addition, the busbar assembly 21 further includes a second insulating layer 217, which is located between the DC busbar and the AC output pole busbar 214. The second insulating layer 217 can provide electrical isolation and insulation protection between the DC busbar and the AC output pole busbar 214 to prevent current short circuit or circuit failure.

[0640] In addition, the busbar assembly 21 further includes a third insulating layer 218, which is located above the DC busbar. The third insulating layer 218 can be used to provide additional electrical isolation between the DC busbar 210 and other parts. This helps to ensure that the current of the DC busbar 210 does not affect other components or structures located above. The first insulating layer 216, the second insulating layer 217, and the third insulating layer 218 can also provide physical protection for electronic components. It can reduce the risk of dust, contaminants, or foreign objects entering the busbar assembly 21 and affecting circuit performance.

[0641] In some embodiments, the first insulating layer 216, the second insulating layer 217, and the third insulating layer 218 may be made of different insulating materials, such as insulating plastic or insulating resin, glass fiber, etc. The material selection of the insulating layer can be determined according to the specific application and environmental requirements. Different insulating materials have different electrical and mechanical properties, so it is necessary to select a material suitable for a specific application, which is not specifically limited here.

[0642] In some embodiments, the first insulating layer 216, the second insulating layer 217, and the third insulating layer 218 are usually flat to ensure effective electrical isolation. Their thickness and size need to be determined according to design requirements and are not specifically limited here.

[0643] In some embodiments, the main body of the busbar assembly 21 does not need to have holes, and the integrity of the flow path can be maintained, which helps to reduce resistance and improve current transmission efficiency, and reduce process complexity. The connection between the terminal of each busbar and the terminal of the corresponding connected transistor is uniform in thickness and has a certain horizontal contact area, and there is no obstruction above, which is convenient for connection using laser welding. Laser welding can be a high-precision connection method suitable for precise connection of small electronic components. Through laser welding, connection under local high temperature can be achieved to ensure the firmness of the connection point without affecting other parts.

[0644] Specifically, during the laser welding process, the laser beam is focused on the contact points of the busbar terminals and the transistor terminals to generate high temperatures to fuse them together. Since they have sufficient horizontal contact area, this can ensure the stability and reliability of the welding connection while reducing the resistance in the connection. This design can be used to connect the busbar assembly 21 and the transistor in the power semiconductor device unit to ensure the high performance and stability of the circuit.

[0645] Fig.67 is an equivalent circuit diagram of a half-bridge subunit according to an embodiment of the present invention, which is used to describe the circuit behavior of the half-bridge subunit 70 during the switching process. Fig.67 As shown, arrows indicate the commutation loop of the half-bridge subunit 70 during the switching process. Fig.68is an equivalent circuit diagram of a power semiconductor device unit according to an embodiment of the present invention, such as Fig.68 As shown, the DC positive busbar 210 is connected to the drain of the first power semiconductor device 220 in each half-bridge sub-unit 70 in sequence, and the DC negative busbar 212 is connected to the source of the second power semiconductor device 230 in each half-bridge sub-unit 70 in sequence, and the half-bridge sub-units 70 are connected in parallel in a "serial" manner to form an overall structure of the power semiconductor device unit.

[0646] like Fig.68 As shown in the figure, during the switching process, the current directions of the DC positive busbar 210 and the DC negative busbar 212 are opposite, which can reduce the parasitic inductance introduced by the busbar, thereby improving the dynamic uneven current effect of different power semiconductor devices during the switching process. Specifically, the DC positive busbar 210 and the DC negative busbar 212 are located above the busbar assembly 21, and they are respectively connected to the DC positive terminal 211 and the DC negative terminal 213 in the power semiconductor device unit. The current directions of the two are opposite, so Fig.68 The direction is the reference, that is, the current of the positive busbar flows from left to right, while the current of the negative busbar flows from right to left. This opposite current direction can make their mutual inductance cancel each other, thereby reducing the parasitic inductance introduced by the busbar.

[0647] In addition, in a switching circuit, the current may change during the switching process, which may easily lead to uneven current in different parts. By designing the current directions in the DC positive busbar 210 and the DC negative busbar 212 to be opposite, the current unevenness between different power semiconductor devices can be reduced, and the dynamic response and stability of the circuit can be improved.

[0648] Fig.69 is a diagram of the electric field simulation result of a busbar assembly according to an embodiment of the present invention, Fig.69 The electric field line distribution in the mutual capacitance simulation between the AC output busbar 214 and the rest is shown. During the inverter operation of the power semiconductor device unit, the potential of the AC output busbar 214 jumps back and forth between the DC positive voltage and the DC negative voltage, which may cause electromagnetic interference to the other components in the system, especially the driver board 23 which is closer. The range that the electric field lines emitted from the AC output busbar 214 can reach is the area that can be affected. The denser the electric field lines, the greater the impact.

[0649] contrast Fig.62 and Fig.69 For example, Fig.62 As shown in FIG. 1 , the AC output busbar 214 is close to the driving board 23, and there are dense electric field lines between the two, which indicates that the potential jump on the AC output busbar 214 in the prior art is likely to affect the driving board 23. Fig.69As shown, the DC positive busbar 210 and the DC negative busbar 212 form a shield between the AC output busbar 214 and the drive board 23 in the embodiment of the present invention, and the main electric field lines emitted from the AC output busbar 214 cannot reach the drive board 23. Therefore, the potential jump on the AC output busbar 214 in the embodiment of the present invention is not likely to affect the normal operation of the drive board 23. This design reduces the possibility of electromagnetic interference and improves the electromagnetic compatibility of the system.

[0650] Reference below Figure 61-Figure 70 A power semiconductor module according to an embodiment of the present invention is described. The power semiconductor module 10 can be used to drive a power semiconductor device unit and realize efficient power conversion and distribution.

[0651] In some embodiments, the power semiconductor module 10 includes: at least one power semiconductor device unit, each power semiconductor device unit includes a plurality of power semiconductor devices, a driving board 23 and the busbar assembly 21 described in the above embodiments.

[0652] In some embodiments, the power semiconductor device may generally include various types of semiconductor devices, and the specific selection depends on the application needs and performance requirements. The power semiconductor device may include but is not limited to silicon (Si) power semiconductor devices, silicon carbide (SiC) power semiconductor devices, gallium nitride (GaN) power semiconductor devices, etc. No specific limitation is made here.

[0653] Among them, SiC power semiconductor devices have become increasingly popular in recent years and are widely used in many fields. This is because SiC power semiconductor devices can be used in high-performance and high-temperature applications such as power conversion in electric vehicles and solar inverters. Compared with Si power semiconductor devices, SiC power semiconductor devices have lower switching losses and higher operating temperature capabilities, thereby improving the efficiency and reliability of the system.

[0654] In some embodiments, the driver board 23 can be used to control and manage the power semiconductor device unit. The driver board 23 can include circuits, chips, electronic components, etc. to ensure the correct operation of the power semiconductor device unit. The design of the driver board 23 usually involves electrical connection with the power semiconductor device unit to ensure proper current and voltage control.

[0655] In some embodiments, the busbar assembly 21 may be one of the key components of the power semiconductor module 10. The busbar assembly 21 may include a DC positive busbar 210, a DC negative busbar 212, an AC output busbar 214, and an insulating layer. These busbars are used to connect and distribute current, provide voltage connection, and reduce the impact range of electromagnetic interference through a specific layout structure to ensure stable operation of the circuit.

[0656] According to the power semiconductor module 10 of the embodiment of the present invention, by adopting the busbar assembly 21 described in the above embodiment, the layout structure of the busbar assembly 21 adopts a DC busbar and an AC output pole busbar 214 that are stacked in sequence from top to bottom along the thickness direction of the power semiconductor device unit. The AC output pole busbar 214 is away from the driving board 23, and when the power semiconductor device is working, the AC output pole busbar 214 can be affected by the electromagnetic shielding effect of the DC busbar above, which effectively limits the electromagnetic interference of the potential jump of the AC output pole busbar to other key circuit components, especially the driving board 23 that is relatively close, thereby improving the anti-interference performance of the power semiconductor device unit, thereby ensuring the stable operation of the unit.

[0657] In an embodiment, a plurality of power semiconductor devices of each power semiconductor device unit are spaced apart and arranged in an array, wherein the number of rows and columns of the array is not specifically limited herein.

[0658] Fig.70 is a schematic diagram of a layout of power semiconductor devices connected in parallel according to an embodiment of the present invention, such as Fig.70 As shown, the power semiconductor device includes a plurality of first power semiconductor devices 220 and a plurality of second power semiconductor devices 230 .

[0659] Among them, a plurality of first power semiconductor devices 220 are connected in parallel, and a plurality of second power semiconductor devices 230 are also connected in parallel to increase the current carrying capacity and power processing capacity. A plurality of first power semiconductor devices 220 are arranged along a first direction, and a plurality of second power semiconductor devices 230 are arranged along a first direction. For example, the first direction may be the length direction of the power semiconductor device unit. A plurality of first power semiconductor devices 220 and a plurality of second power semiconductor devices 230 are arranged correspondingly along a second direction. For example, the second direction may be the width direction of the power semiconductor device unit. The first direction and the second direction are both perpendicular to the thickness direction of the power semiconductor device unit, and the first direction and the second direction intersect.

[0660] The plurality of first power semiconductor devices 220 together form an upper bridge structure 50, and the plurality of second power semiconductor devices 230 together form a lower bridge structure 60. In addition, in order to reduce the parasitic inductance of the commutation loop, the upper bridge structure 50 and the lower bridge structure 60 should be as close as possible, so as to naturally form a Fig.70 The upper and lower bridge structures are shown arranged in a line.

[0661] Fig.71 is a schematic diagram of a layout of four groups of power semiconductor devices connected in parallel according to an embodiment of the present invention, Fig.71 The arrangement of the power semiconductor devices of the embodiment of the present invention and the corresponding positions of the bus capacitor 24 and the load 26 are shown. Fig.71As shown, the first power semiconductor device 220 and the second power semiconductor device 230 cooperate with each other to form a half-bridge subunit 70 of the power semiconductor device. Fig.71 The four half-bridge subunits 70 are closely arranged along the length direction. The bus capacitor 24 and the load 26 can be arranged on both sides of the half-bridge subunit 70 along the length direction. The positions of the bus capacitor 24 and the load 26 can be interchanged.

[0662] In some embodiments, the design of the busbar assembly 21 needs to consider the layout of the capacitor and the load 26. The power semiconductor device needs to be connected to the DC capacitor, and the distance between the two needs to be as close as possible. Specifically, when the busbar capacitor 24 is arranged in the width direction of the power semiconductor device, multiple power semiconductor device units need to be arranged in the length direction. Assuming that the length direction of the power semiconductor device is L, the length of multiple power semiconductor device units (such as three power semiconductor device units) along the dimension expansion direction is 3*N*L. When the busbar capacitor 24 is arranged in the length direction of the power semiconductor device, multiple power semiconductor device units need to be arranged in the width direction. At this time, the length of multiple power semiconductor device units (such as three power semiconductor device units) along the dimension expansion direction is N*L, and high-power occasions require more power semiconductor devices to be connected in parallel. Therefore, the busbar capacitor 24 is arranged in the length direction of the power semiconductor device. Multiple power semiconductor device units have smaller unidirectional dimensions, which can improve the overall integration of the system.

[0663] Fig.72 is a schematic diagram of the layout of power semiconductor devices in a half-bridge subunit according to an embodiment of the present invention, such as Fig.72 As shown, the half-bridge subunit 70 may include a first power semiconductor device 220 and a second power semiconductor device 230. The first power semiconductor device 220 and the second power semiconductor device 230 may be arranged in rotational symmetry, and the terminal of the first power semiconductor device 220 is located on the side of the first power semiconductor device 220 away from the second power semiconductor device 230 in the second direction. This means that the terminal of the first power semiconductor device 220, such as an electrode or a pin, is positioned on the side farther from the second power semiconductor device 230. The terminal of the second power semiconductor device 230 is located on the side of the second power semiconductor device 230 away from the first power semiconductor device 220 in the second direction. This means that the terminal of the second power semiconductor device 230, such as an electrode or a pin, is positioned on the side farther from the second power semiconductor device 230.

[0664] Therefore, the terminals of the two power semiconductor devices face different sides. This arrangement helps to avoid electromagnetic interference and short circuit between the terminals, and is easier to connect to the corresponding busbar. There are no terminals on the adjacent sides of the two power semiconductor devices, so there is no need to consider the insulation distance. The system integration can be improved by reducing the distance between the two power semiconductor devices.

[0665] Fig.73 is a schematic diagram of a first power semiconductor device according to an embodiment of the present invention, Fig.73 As shown, the terminals of the first power semiconductor device 220 include a first drain terminal 221 and a first source terminal 222. These terminals may be electrodes or pins on the device, and are used to connect to a circuit for current control and power transmission.

[0666] The first drain terminal 221 is connected to the first DC connection terminal of the busbar assembly 21, and can be connected to the DC positive busbar 210, so that the current can flow from the DC positive busbar 210 to the first drain terminal 221 of the first power semiconductor device 220. The first source terminal 222 is connected to the first AC connection terminal of the busbar assembly 21. This connection method helps to guide the output current from the first power semiconductor device 220 to the AC output busbar 214, and then transmit it to the external load 26 or other circuit parts.

[0667] Through this connection method, the first drain terminal 221 and the first source terminal 222 of the first power semiconductor device 220 are respectively connected to different terminals of the busbar assembly 21 to achieve the transmission of DC and AC current, which is conducive to the normal operation and power transmission of the power semiconductor module 10.

[0668] In some embodiments, Fig.74 As shown, the terminals of the second power semiconductor device 230 include a second drain terminal 231 and a second source terminal 232. These terminals can also be electrodes or pins on the device, which are used to connect to the circuit for current control and power transmission.

[0669] The second drain terminal 231 is connected to the second AC connection terminal of the busbar assembly 21. This connection mode allows the output current to be guided from the second power semiconductor device 230 to the AC output busbar 214, and then transmitted to the external load 26 or other circuit parts to transfer power or signals. The second source terminal 232 is connected to the second DC connection terminal of the busbar assembly 21. This connection mode helps to connect the second source terminal 232 of the second power semiconductor device 230 to a DC power supply or other related circuit elements to ensure that the current flows from the device to other parts.

[0670] Through this connection mode, the second drain terminal 231 and the second source terminal 232 of the second power semiconductor device 230 are respectively connected to different terminals of the busbar assembly 21 to achieve the transmission of direct current and alternating current. This connection mode can be used in semiconductor power modules to effectively control current and transmit power.

[0671] like Fig.63 and Fig.73 As shown, the terminal of the first power semiconductor device 220 also includes a first drive terminal 223. The first drive terminal 223 extends from the side of the busbar assembly 21 along the thickness direction of the power semiconductor device unit and is connected to the drive board 23, which is used to control and adjust the operation of the power semiconductor device. By connecting to the drive board 23, the first drive terminal 223 can receive a signal from the control circuit to effectively control the working state of the first power semiconductor device 220. This connection allows the control electronics in the circuit to work in coordination with the power semiconductor device to achieve the required power transfer and current control. The first drive terminal 223 can be divided into a first drive source terminal 224 and a first drive gate terminal 225.

[0672] like Fig.63 and Fig.74 As shown, the terminal of the second power semiconductor device 230 also includes a second drive terminal 233, which extends from the side of the busbar assembly along the thickness direction of the power semiconductor device unit and is connected to the drive board 23. In this way, the second drive terminal 233 can receive a signal from the control circuit to effectively control the working state of the second power semiconductor device 230. The second drive terminal 233 can be divided into a first drive source terminal 234 and a first drive gate terminal 235.

[0673] In an embodiment, the lead-out side of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit is different from the lead-out side of the terminal of the first power semiconductor device (220), and the lead-out side of the DC positive terminal and the DC negative terminal of the busbar assembly of the power semiconductor device unit is different from the lead-out side of the terminal of the second power semiconductor device (230). For example, the lead-out side of the DC positive terminal and the DC negative terminal is one side of the length direction of the power semiconductor device unit, so as to be connected to the DC bus capacitor located on one side of the length direction of the power semiconductor device unit, and the first power semiconductor device and the second power semiconductor device respectively lead out terminals from both sides of the width direction of the power semiconductor device.

[0674] In some embodiments, the driving terminal of the power semiconductor device can be connected using Kelvin. This can eliminate the common source inductance of the power circuit and the driving circuit in the device, reduce the impact of the power circuit current on the driving circuit, and reduce the power loss during the switching process. This design can improve switching efficiency and reduce power loss, which is particularly important in high-power applications.

[0675] In some embodiments, multiple power chips can be packaged inside a power semiconductor device. This means that multiple power chips can work in parallel in the same device, thereby improving the overall power carrying capacity. This multi-chip packaging design helps to meet the needs of high-power applications and improve power density.

[0676] Fig.75 is a schematic diagram of a heat dissipation substrate according to an embodiment of the present invention. Fig.75 As shown, each power semiconductor device unit further includes a heat dissipation substrate 25 . A plurality of power semiconductor devices are disposed on the heat dissipation substrate 25 .

[0677] Among them, the heat dissipation substrate 25 can be a key component in the power semiconductor device unit, which is used to provide mechanical support and heat dissipation for the power semiconductor device unit, thereby ensuring the stable operation and good heat dissipation performance of the power semiconductor device unit. The heat dissipation substrate 25 is usually made of a material with good thermal conductivity, such as aluminum or copper, to effectively transfer the heat generated by the power semiconductor device to the external environment to prevent the device from overheating, thereby keeping the operating temperature of the device within an acceptable range. Therefore, the heat dissipation substrate 25 plays an important role in heat dissipation in the power semiconductor module 10.

[0678] In some embodiments, the heat dissipation substrate 25 can achieve good thermal conductivity and ensure that the CTE (coefficient of thermal expansion) of the heat dissipation substrate 25 matches that of the power semiconductor device. This means ensuring that the heat dissipation substrate 25 and the power semiconductor device have similar coefficients of thermal expansion to prevent different degrees of size or shape changes between them when the temperature changes. If their coefficients of thermal expansion do not match, they may be distorted, stressed, or cracked when the temperature rises or falls, thereby affecting the performance and reliability of the device.

[0679] like Fig.75As shown, the heat dissipation substrate 25 includes: a substrate 251, a plurality of bosses 252 and a plurality of heat dissipation columns 253. Among them, the substrate 251 can be the main part of the heat dissipation substrate 25, which is usually a flat plate-like structure for supporting and fixing the power semiconductor device and realizing heat dissipation. It is usually made of a material with good thermal conductivity, such as metal. A plurality of bosses 252 are arranged on the first surface of the substrate 251, and these bosses 252 can be small protrusion structures for placing power semiconductor devices. A plurality of bosses 252 are arranged corresponding to a plurality of power semiconductor devices, and the power semiconductor devices are located on these bosses 252. The design of the bosses 252 helps to increase the contact area between the device and the heat dissipation substrate 25 to conduct heat more effectively. In an embodiment, the substrate 251, the plurality of bosses 252 and the heat dissipation columns 253 of the heat dissipation substrate can be an integral structure formed by the same material such as copper.

[0680] In addition, a boss 252 is machined on the upper surface of the heat dissipation substrate 25, which can be used to ensure that the creepage distance between the terminal and the heat dissipation substrate 25 meets the safety requirements and facilitates installation and positioning. The creepage distance can be the minimum distance between two conductive surfaces, which needs to meet specific electrical safety standards to ensure the reliability and safety of the equipment. This is very critical in power electronic equipment, especially in high-power applications, because electrical isolation and insulation problems may cause serious safety risks when the voltage is high. Therefore, it is necessary to ensure that the distance between the terminal of the power semiconductor device and the heat dissipation substrate 25 is large enough to prevent electric breakdown or electrical short circuit, thereby preventing damage to the circuit or causing a malfunction.

[0681] In some embodiments, a plurality of heat dissipation columns 253 are disposed on the second surface of the substrate 251, and the second surface of the substrate 251 is opposite to the first surface of the substrate 251. The heat dissipation columns 253 may transfer the heat transferred to the substrate 251 through the bosses 252 to the external environment of the module to ensure that the power semiconductor device is maintained at a safe operating temperature.

[0682] In some embodiments, the heat sink 253 can dissipate heat through a liquid cooling system. Specifically, the heat sink 253 can be a thermally conductive element, usually made of metal, used to transfer the heat of the device to the coolant for heat dissipation. In the liquid cooling system, the coolant flows through the heat sink 253, absorbs the heat generated by the device, and then takes the heat away by flowing to maintain the temperature of the device within an acceptable range. The design and placement of the heat sink 253 are very important for effective liquid cooling. They need to be in close contact with the device to maximize the heat transfer efficiency and ensure that the coolant can effectively absorb and dissipate heat.

[0683] Fig.76 Schematic diagram of a heat conducting layer according to an embodiment of the present invention. Fig.76As shown, a heat conducting layer 240 is provided at the bottom of the power semiconductor device. The heat conducting layer 240 is usually made of a material with good thermal conductivity, such as a copper layer. The main function of the heat conducting layer 240 is to increase the heat conduction efficiency between the power semiconductor device and the boss 252. By adding a heat conducting layer 240 at the bottom of the power semiconductor device, the heat generated by the device can be more effectively transferred to the boss 252, and then conducted to the heat dissipation substrate 25. This helps to prevent the power semiconductor device from overheating and improves the performance and reliability of the device. In some embodiments, the heat conducting layer 240 and the corresponding boss 252 can be connected by a sintering process.

[0684] Specifically, for example, a power semiconductor device may use a copper-ceramic-copper structure substrate, with the chip and device terminals connected to the upper copper surface, the middle layer of ceramic playing an insulating and thermal conductive role, and the lower copper surface exposed as a thermal conductive layer 240.

[0685] Fig.77 It is a thermal simulation diagram based on the prior art. Fig.78 is a thermal simulation diagram according to an embodiment of the present invention. Fig.77 and Fig.78 The influence of the arrangement of power semiconductor devices in the prior art and the present invention on heat dissipation is demonstrated. Except for the different arrangements and the resulting differences in the size of the heat dissipation substrate 25, other simulation conditions are kept consistent, including the same chip and substrate 251 size, heat dissipation pin size, single chip loss, inlet and outlet pressure difference, inlet coolant temperature, etc. The maintenance of these conditions makes the comparison more reliable.

[0686] Furthermore, the simulation results show that the average junction temperature of the chip under the prior art is 150.0°C, the maximum junction temperature is 159.4°C, and the average junction temperature difference between the group of power semiconductor devices closest to the entrance and the group of power semiconductor devices farthest is 21.7°C. The simulation results of the present invention show that the average junction temperature of the chip is 145.4°C, the maximum junction temperature is 153.1°C, and the average junction temperature difference between the group of power semiconductor devices closest to the entrance and the group of power semiconductor devices farthest is 17°C. It can be seen from the simulation results that the arrangement adopted by the present invention performs better in terms of heat dissipation and temperature uniformity. There are two main reasons for this difference:

[0687] First, the length of the water tank flow channel is shorter. In the design of the present invention, the water tank flow channel is shorter, which reduces the overall flow resistance and thus improves the overall heat dissipation performance. The shorter water tank flow channel can more effectively transfer the coolant to the vicinity of the chip, reducing the operating temperature of the chip.

[0688] Second, the temperature difference between the inlet and outlet coolant is reduced. The layout design of the present invention can reduce the temperature difference between the inlet and outlet coolant, which helps to improve the temperature uniformity performance. A smaller temperature difference means that the cooling effect on chips at different positions is more uniform, thereby reducing the temperature difference.

[0689] Taking all these factors into consideration, the design of the present invention has obvious advantages in terms of heat dissipation and temperature uniformity, which helps to ensure the stability and reliability of the system under high load 26.

[0690] In some embodiments, the at least one power semiconductor device unit includes three power semiconductor device units, and the three power semiconductor device units are arranged along the second direction to form a three-phase full-bridge power semiconductor device unit.

[0691] Fig.79 is a schematic diagram of the layout of a three-phase full-bridge power semiconductor device unit according to an embodiment of the present invention, such as Fig.79 As shown, the U-phase half-bridge power semiconductor device unit 20, the V-phase half-bridge power semiconductor device unit 30, and the W-phase half-bridge power semiconductor device unit 40 are arranged on the heat dissipation substrate 25 along the length direction to form a three-phase full-bridge power semiconductor device unit. The DC connection terminal of each phase is located on the same side for connecting the external bus capacitor 24, while the AC connection terminal is located on the other side for connecting the load 26. This layout can ensure that each phase can be easily connected to the required circuit elements, and the three-phase full-bridge power semiconductor device unit has a more moderate length-to-width ratio, which is conducive to improving the integration of the converter, and has good scalability when the number of power semiconductor devices in parallel increases.

[0692] Fig.80 1 is an overall schematic diagram of a three-phase full-bridge integrated power semiconductor device unit according to an embodiment of the present invention. Fig.80 As shown, the power semiconductor module 10 is composed of a heat dissipation substrate 25, a three-phase full-bridge power semiconductor device unit and a driving board 23 from bottom to top. This layout has high integration, compact design, good heat dissipation performance and reliability, and is particularly suitable for high-power and high-density applications.

[0693] Reference below Fig.81 An electronic device according to an embodiment of the present invention is described.

[0694] Fig.81 is a block diagram of an electronic device according to an embodiment of the present invention, such as Fig.81 As shown, the electronic device 1 includes the power semiconductor module 10 described in the above embodiment.

[0695] In some embodiments, the electronic device 1 can be any type of electronic system or device. This device may be used in various applications, including but not limited to power electronic converters, motor drives, power supplies, etc. The electronic device 1 can be applied in various fields, such as industrial automation, transportation, medical equipment, energy management, etc. The specific application depends on the type and configuration of the power semiconductor module 10, as well as the design and purpose of the device.

[0696] According to the electronic device 1 of the embodiment of the present invention, by adopting the power semiconductor module 10 described in the above embodiment, the layout structure of the busbar assembly 21 in the power semiconductor module 10 adopts a DC positive busbar 210, a DC negative busbar 212 and an AC output busbar 214 that are stacked in sequence from top to bottom in the vertical direction. The AC output busbar 214 is away from the driving board 23, and when the power semiconductor device is working, the AC output busbar 214 can be subjected to the electromagnetic shielding effect from the upper DC positive busbar 210 and the DC negative busbar 212, which effectively limits the electromagnetic interference of the potential jump of the AC output busbar to other key circuit components, especially the driving board 23 that is relatively close, and improves the anti-interference performance of the power semiconductor device unit, thereby helping to improve the performance and stability of the electronic device and ensure the reliable operation of the unit.

[0697] Fig.82 is a block diagram of a vehicle according to an embodiment of the present invention, such as Fig.82 As shown, a vehicle 100 includes the electronic device 1 described in the above embodiment.

[0698] In some embodiments, the vehicle 100 may include, but is not limited to, a car, a truck, a motorcycle, an electric car, etc. Such a vehicle 100 is generally used for transportation, commuting, entertainment, or other purposes. The electronic device may generally be installed in the power control system of the vehicle 100 for managing and controlling tasks such as power flow, motor control, and battery management of the vehicle 100. The power semiconductor module 10 of the electronic device may play a key role in the vehicle power system. It may control the charging and discharging of the battery, manage the power output of the motor, and ensure the stability and efficiency of the vehicle power system.

[0699] The vehicle 100 according to the embodiment of the present invention, by adopting the electronic equipment described in the above embodiment, can reduce the risk of electromagnetic interference, improve the anti-interference performance of the power semiconductor device unit, ensure the reliability and stability of the vehicle's electronic system, and thus improve the overall performance of the vehicle 100.

[0700] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0701] In the description of the present invention, "plurality" means two or more.

[0702] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0703] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A half-bridge power unit, characterized in that: include: An AC output pole busbar (33), wherein the AC output pole busbar (33) has a first surface; At least one half-bridge power subunit, each of the half-bridge power subunits being arranged on the first surface side of the AC output pole busbar (33), and each of the half-bridge power subunits comprising at least a first semiconductor power device (211) and a second semiconductor power device (212); The source power terminal (12) and the drain power terminal (11) of the first semiconductor power device (211) are respectively arranged on the upper surface of the first semiconductor device, and the source power terminal (21) and the drain power terminal (22) of the second semiconductor power device are respectively arranged on the upper surface of the second semiconductor power device, wherein: The source power terminal (12) of the first semiconductor power device (211) and the drain power terminal (21) of the second semiconductor power device (212) are commonly connected to the first surface of the AC output busbar (33).

2. The half-bridge power unit according to claim 1, characterized in that: The first semiconductor power device (211) and the second semiconductor power device (212) are arranged side by side along a first direction, and the source power terminal (12) of the first semiconductor power device (211) and the drain power terminal (21) of the second semiconductor power device (212) are arranged adjacent to each other; the first direction is the direction from the source power terminal (11) of the first semiconductor power device (211) to the drain power terminal (12).

3. The half-bridge power unit according to claim 1, characterized in that: The half-bridge power unit also includes: A DC positive busbar (31), the drain power terminal (11) of the first semiconductor power device (211) being electrically connected to the DC positive busbar (31).

4. The half-bridge power unit according to claim 3, characterized in that: The half-bridge power unit also includes: The DC negative busbar (32), the source power terminal (12) of the second semiconductor power device (212) is electrically connected to the DC negative busbar (32).

5. The half-bridge power unit according to claim 4, characterized in that: The AC output pole busbar (33) has a second surface, and the first surface of the AC output pole busbar (33) and the second surface of the AC output pole busbar (33) are opposite surfaces of the AC output pole busbar (33); The DC positive busbar (31) and the DC negative busbar (32) are both located on the second surface side of the AC output busbar (33).

6. The half-bridge power unit according to claim 5, characterized in that: The DC positive busbar (31), the DC negative busbar (32), and the AC output busbar (33) are spaced apart and arranged in parallel in a second direction, the second direction being the direction in which the half-bridge power subunit points to the AC output busbar (33), and the second direction is perpendicular to the first direction.

7. The half-bridge power unit according to claim 5, characterized in that: The DC positive busbar (31) is located between the DC negative busbar (32) and the AC output busbar (33).

8. The half-bridge power unit according to claim 5, characterized in that: The DC negative busbar (32) is located between the DC positive busbar (31) and the AC output busbar (33).

9. The half-bridge power unit according to claim 7, characterized in that: A first insulating layer (4) is provided between the DC positive busbar (31) and the DC negative busbar (32), and a second insulating layer (5) is provided between the DC positive busbar (31) and the AC output busbar (33).

10. The half-bridge power unit according to claim 8, characterized in that: A third insulating layer is provided between the DC negative busbar and the DC positive busbar, and a fourth insulating layer is provided between the DC negative busbar and the AC output busbar (33).

11. The half-bridge power unit according to claim 6, characterized in that: The AC output pole busbar leads out a first external terminal (331) in a third direction, the third direction is perpendicular to the first direction and the second direction, and the first external terminal (331) is used to connect an external load.

12. The half-bridge power unit according to claim 11, characterized in that: The DC positive busbar (31) leads out a second external terminal (311) in the third direction.

13. The half-bridge power unit according to claim 12, characterized in that: The DC negative busbar (32) leads out a third external terminal (321) in a third direction.

14. The half-bridge power unit according to claim 13, characterized in that: The second external terminal (311) and the third external terminal (321) are arranged on a first side of the third direction.

15. The half-bridge power unit according to claim 14, characterized in that: The first external terminal (331) is arranged on the second side of the third direction.

16. The half-bridge power unit according to claim 14, characterized in that: The half-bridge power unit comprises a capacitor (1); wherein: The first end of the capacitor (1) is electrically connected to the first external terminal (311), and the second end of the capacitor (1) is electrically connected to the second external terminal (321).

17. The half-bridge power unit according to claim 11, characterized in that: The first semiconductor power device (211) further comprises a first driving terminal, wherein the first driving terminal is arranged on a side surface of the first semiconductor power device (211) in a third direction; The second semiconductor power device (212) further comprises a second driving terminal, and the second driving terminal is arranged on a side surface of the second semiconductor power device (212) in a third direction.

18. The half-bridge power unit according to claim 17, characterized in that: The first driving terminal of the first semiconductor power device (211) comprises a first gate driving terminal (14), and the first gate driving terminal (14) extends out along the second direction.

19. The half-bridge power unit according to claim 17, characterized in that: The second driving terminal of the second semiconductor power device (212) comprises a second gate driving terminal (24), and the second gate driving terminal (24) extends along the second direction.

20. The half-bridge power unit according to claim 18, characterized in that: The DC positive busbar (31), the DC negative busbar (32) and the AC output busbar (33) are provided with a first opening (8), and the first gate drive terminal of the first semiconductor power device (211) is led out through the first opening (8).

21. The half-bridge power unit according to claim 20, characterized in that: The first driving terminal of the first semiconductor power device (211) further comprises a first source driving terminal (13), wherein the first source driving terminal (13) is arranged adjacent to the first gate driving terminal (14), and the first source driving terminal (13) is led out through the first opening (8).

22. The half-bridge power unit according to claim 19, characterized in that: The DC positive busbar (31), the DC negative busbar (32) and the AC output busbar (33) are provided with a second opening (9), and the second gate drive terminal 24 of the second semiconductor power device (212) is led out through the second opening (9).

23. The half-bridge power unit according to claim 22, characterized in that: The second driving terminal of the second semiconductor power device (211) further comprises a second source driving terminal (23), the second source driving terminal (23) is arranged adjacent to the second gate driving terminal (24), and the second source driving terminal is led out through the second opening (9).

24. The half-bridge power unit according to claim 21, characterized in that: The half-bridge power unit also includes a driving board (7), and the first gate driving terminal (14) and / or the first source driving terminal (13) are led out from the first opening (8) and are electrically connected to the driving board (7).

25. The half-bridge power unit according to claim 23, characterized in that: The half-bridge power unit also includes a driving board (7), and the second gate driving terminal (24) and / or the second source driving terminal (23) are led out from the second opening (9) and are electrically connected to the driving board (7).

26. The half-bridge power unit according to claim 5, characterized in that: At least one of the DC positive busbar (31), the DC negative busbar (32) and the AC output busbar (33) covers the at least one half-bridge power subunit.

27. The half-bridge power unit according to claim 2, characterized in that: The half-bridge power unit comprises at least two half-bridge power sub-units, and the at least two half-bridge power sub-units are arranged side by side along a third direction, and the third direction is perpendicular to the first direction in a plane where the first surface of the AC output pole busbar (33) is located.

28. The half-bridge power unit according to claim 4, characterized in that: The semiconductor power device terminals and the busbar are electrically connected by laser welding.

29. A full-bridge power unit, characterized in that: The method comprises at least two half-bridge power units according to any one of claims 2 to 28.

30. The full-bridge power unit according to claim 29, characterized in that: At least two of the half-bridge power units are arranged side by side along a first direction.

31. The full-bridge power unit according to claim 30, characterized in that: The full-bridge power unit further comprises a driving plate (7), wherein the driving plate (7) at least partially covers the half-bridge power unit.

32. The full-bridge power unit according to claim 31, characterized in that: The full-bridge power unit includes three half-bridge power units, and the driving board is arranged to cover the three half-bridge driving units.

33. The full-bridge power unit according to claim 32, characterized in that: The first semiconductor power device (211) further comprises a first gate drive terminal, and the first gate drive terminal is electrically connected to the drive board.

34. The full-bridge power unit according to claim 32, characterized in that: The second semiconductor power device also includes a second gate drive terminal, and the second gate drive terminal is electrically connected to the drive board (7).

35. The full-bridge power unit according to claim 29, characterized in that: The full-bridge power unit also includes a heat dissipation substrate (6), and the half-bridge power unit is arranged on the heat dissipation substrate (6).

36. The full-bridge power unit according to claim 35, characterized in that: The first semiconductor power device (211) comprises a first heat-conducting layer (15) located on the lower surface; the second semiconductor power device (212) comprises a second heat-conducting layer located on the lower surface; The first heat-conducting layer (15) and the second heat-conducting layer are connected to the heat-dissipating substrate (6) by welding or sintering.

37. The full-bridge power unit according to claim 36, characterized in that: The heat dissipation substrate (6) is provided with bosses (61) corresponding one-to-one to the first semiconductor power device (211) and the second semiconductor power device (212); The first heat-conducting layer (19) and the second heat-conducting layer are respectively connected to corresponding bosses (61) on the heat-dissipating substrate (6) by welding or sintering.

38. An electronic device, characterized in that: It comprises a half-bridge power unit as claimed in any one of claims 1 to 28, or comprises a full-bridge power unit as claimed in any one of claims 29 to 37.

39. A vehicle, characterized in that: The vehicle includes the electronic device as claimed in claim 38.

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