A self-generating device and an electric appliance

Abstract

The application provides a self-generating device and an electric equipment, the self-generating device comprises a photovoltaic power generation component and a thermoelectric power generation component which are arranged in parallel with each other; the photovoltaic power generation component comprises a first power generation layer and a second power generation layer which are stacked, the first power generation layer and the second power generation layer are different semiconductor layers in N-type semiconductor layer and P-type semiconductor layer; the thermoelectric power generation component comprises a third power generation layer and a fourth power generation layer, the third power generation layer is a hot end layer, and the fourth power generation layer is a cold end layer; the third power generation layer is multiplexed with at least part of the second power generation layer, and the fourth power generation layer is arranged on the side of the second power generation layer away from the first power generation layer; in the application, the heat possessed by the photovoltaic power generation component in the power generation process can meet the heat requirement of the thermoelectric power generation component, so that the functions of common power generation and parallel output are realized, and the power generation efficiency is improved; and the thermoelectric power generation component can continue to generate electricity in the scene without light source but with heat source, and the power generation efficiency of the self-generating device is further improved.

Description

Technical Field

[0001] This application belongs to the field of self-generating technology, and in particular relates to a self-generating device and electrical equipment. Background Technology

[0002] In the field of self-generating power technology, photovoltaic (PV) power generation and thermoelectric power generation are two important energy conversion methods. PV power generation is a technology that directly converts light energy into electrical energy using the photovoltaic effect at semiconductor interfaces. Thermoelectric power generation is a technology that generates electricity using temperature differences.

[0003] In related technologies, photovoltaic power generation and thermoelectric power generation are set up separately, but the energy utilization efficiency of each is limited when operating alone.

[0004] Therefore, how to improve the energy utilization efficiency of self-generating devices is a problem that needs to be solved by those skilled in the art. Summary of the Invention

[0005] The purpose of this application is to provide a self-generating device and electrical equipment, which aims to solve the problem of low energy utilization efficiency of current self-generating devices.

[0006] A first aspect of this application provides a self-generating device, comprising:

[0007] A photovoltaic power generation module includes a first power generation layer and a second power generation layer stacked together, wherein the first power generation layer is one of an N-type semiconductor layer and a P-type semiconductor layer, and the second power generation layer is the other of an N-type semiconductor layer and a P-type semiconductor layer;

[0008] A thermoelectric power generation module includes a third power generation layer and a fourth power generation layer, wherein the third power generation layer is a hot end layer and the fourth power generation layer is a cold end layer; the third power generation layer is reused with at least a portion of the second power generation layer, and the fourth power generation layer is disposed on the side of the second power generation layer away from the first power generation layer;

[0009] The photovoltaic power generation module and the thermoelectric power generation module are connected in parallel.

[0010] In some embodiments of this application, the photovoltaic power generation module includes:

[0011] The front electrode is disposed on the side of the first power generation layer that is away from the second power generation layer;

[0012] The back electrode is disposed on the side of the second power generation layer that is away from the first power generation layer.

[0013] The front electrode is one of the negative electrode and the positive electrode, and the back electrode is the other of the negative electrode and the positive electrode.

[0014] In some embodiments of this application, the thermoelectric power generation component includes a thermoelectric semiconductor disposed between the third power generation layer and the fourth power generation layer; and one end of the thermoelectric semiconductor is disposed in the same layer as the back electrode, while the other end of the thermoelectric semiconductor is disposed close to the fourth power generation layer.

[0015] In some embodiments of this application, the number of thermoelectric semiconductors is multiple, and the multiple thermoelectric semiconductors are arranged at intervals;

[0016] The thermoelectric semiconductors are connected in series, and the thermoelectric semiconductors include a first semiconductor and a second semiconductor located at the beginning and end of the circuit. The first semiconductor and the front electrode are connected together to form the first output electrode of the self-generating device. The second semiconductor and the back electrode are connected together to form the second output electrode of the self-generating device.

[0017] In some embodiments of this application, the first output is the negative terminal and the second output is the positive terminal;

[0018] Or, the first power generation layer is an N-type semiconductor layer, and the second power generation layer is a P-type semiconductor layer;

[0019] Or, the thermoelectric semiconductor is an N-type semiconductor structure.

[0020] In some embodiments of this application, the front electrode is provided with a hollow portion, and the photovoltaic power generation module further includes an anti-reflection layer, which is disposed in the same layer as the front electrode and fills the hollow portion.

[0021] In some embodiments of this application, the second power generation layer includes a first portion that is opposite to the first power generation layer, and the first portion is multiplexed with the third power generation layer.

[0022] In some embodiments of this application, the self-generating device further includes a heat dissipation layer disposed on the side of the fourth power generation layer opposite to the third power generation layer.

[0023] In some embodiments of this application, a voltage regulating element is provided between the output terminal of the photovoltaic power generation module and the output terminal of the thermoelectric power generation module. The voltage regulating element is used to balance the output voltage of the photovoltaic power generation module and the output voltage of the thermoelectric power generation module.

[0024] Secondly, this application also provides an electrical appliance, including the aforementioned self-generating device.

[0025] The beneficial effects of the embodiments of the present invention compared with the prior art are as follows: The self-generating device and electrical equipment described above include a photovoltaic power generation module and a thermoelectric power generation module; the photovoltaic power generation module includes a first power generation layer and a second power generation layer stacked together, the first power generation layer being one of an N-type semiconductor layer and a P-type semiconductor layer, and the second power generation layer being the other of an N-type semiconductor layer and a P-type semiconductor layer; the thermoelectric power generation module includes a third power generation layer and a fourth power generation layer, the third power generation layer being a hot end layer and the fourth power generation layer being a cold end layer; the third power generation layer is reused with at least a portion of the second power generation layer, and the fourth power generation layer is disposed on the side of the second power generation layer away from the first power generation layer, and the photovoltaic power generation module and the thermoelectric power generation module are connected in parallel; the self-generating device in this application includes a photovoltaic power generation module and a thermoelectric power generation module, the heat generated by the photovoltaic power generation module during the power generation process can meet the heat requirements of the thermoelectric power generation module, so as to play the role of jointly generating power and outputting in parallel, which is conducive to improving the power generation efficiency; and in the face of a scenario without a light source but with a heat source, the thermoelectric power generation module can continue to generate power, which is conducive to further improving the power generation efficiency of the self-generating device. Attached Figure Description

[0026] Figure 1 This is a schematic diagram of the structure of a self-generating device provided in an embodiment of this application;

[0027] Figure 2 This is a schematic diagram of the structure of a self-generating device provided in an embodiment of this application;

[0028] Figure 3 Provided for an embodiment of this application Figure 2 A magnified schematic diagram of a portion of structure A.

[0029] Specific element symbols: 100-Photovoltaic power generation module, 110-First power generation layer, 120-Second power generation layer, 121-First part, 130-Front electrode, 131-Hollowed-out part, 140-Back electrode, 150-Antireflection layer, 160-PN junction, 200-Thermoelectric power generation module, 210-Third power generation layer, 220-Fourth power generation layer, 230-Thermoelectric semiconductor, 300-Heat dissipation layer. Detailed Implementation

[0030] To make the technical problems, technical solutions, and beneficial effects to be solved by this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and are not intended to limit the scope of this application.

[0031] It should be noted that when a component is referred to as being "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0032] It should be understood that the terms "length", "width", "upper", "lower", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0033] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0034] It's important to understand that photovoltaic (PV) power generation and thermoelectric power generation are two crucial energy conversion methods in the semiconductor technology field. PV power generation is primarily based on the photoelectric effect. Sunlight irradiates semiconductor materials, photons excite electrons to form electron-hole pairs, and these pairs are then separated by the built-in electric field of the PN junction. This forms a photocurrent through an external circuit, converting light energy into electrical energy. However, PV power generation efficiency is significantly affected by temperature. As temperature increases, the PV effect weakens, and power generation efficiency gradually decreases. This is one of the main challenges facing PV power generation technology.

[0035] On the other hand, thermoelectric power generation utilizes the Seebeck effect, converting thermal energy into electrical energy through the temperature difference across a semiconductor material. During thermoelectric power generation, the heat at the high-temperature end excites charge carriers (electrons or holes) in the semiconductor, causing them to move in a directional manner and creating a potential difference. When the semiconductor material is connected to an external circuit, the directional flow of charge carriers generates current, thus converting thermal energy into electrical energy. Although thermoelectric power generation technology can generate electricity using thermal energy, its efficiency is limited by the temperature gradient and the performance of the semiconductor material.

[0036] To improve energy efficiency, traditional solar thermal power generation systems combine photovoltaic (PV) and thermoelectric power generation technologies. In this system, the PV module primarily converts solar energy into electricity, while the thermoelectric module utilizes the waste heat generated during PV power generation for secondary power generation. However, this traditional design has significant shortcomings. First, the PV and thermoelectric modules typically operate independently, resulting in a complex system structure and high material usage, increasing system cost and complexity. Second, because PV efficiency is affected by temperature, the efficiency of waste heat utilization under high-temperature conditions is limited, leading to low overall energy efficiency.

[0037] Therefore, this application makes improvements to the relevant self-generating devices and electrical equipment.

[0038] Please see Figure 1 , Figure 1 A schematic diagram of the self-generating device provided in this embodiment is shown. This embodiment of the self-generating device includes a photovoltaic power generation module 100 and a thermoelectric power generation module 200. The photovoltaic power generation module 100 includes a first power generation layer 110 and a second power generation layer 120 stacked together. The first power generation layer 110 is one of an N-type semiconductor layer and a P-type semiconductor layer, and the second power generation layer 120 is the other of an N-type semiconductor layer and a P-type semiconductor layer. The thermoelectric power generation module 200 includes a third power generation layer 210 and a fourth power generation layer 220. The third power generation layer 210 is a hot-end layer, and the fourth power generation layer 220 is a cold-end layer. The third power generation layer 210 is reused with at least a portion of the second power generation layer 120, and the fourth power generation layer 220 is disposed on the side of the second power generation layer 120 away from the first power generation layer 110. The photovoltaic power generation module 100 and the thermoelectric power generation module 200 are connected in parallel.

[0039] It should be explained that the photovoltaic power generation module 100 is a device that can directly convert solar radiation energy into electrical energy. When sunlight shines on the photovoltaic cell, photons excite electrons in the semiconductor, causing them to jump from the valence band to the conduction band, thereby generating electron-hole pairs. These charge carriers separate under the influence of the electric field inside the cell, forming an electric current. In this embodiment, both the first power generation layer 110 and the second power generation layer 120 are made of semiconductor materials.

[0040] Thermoelectric generator 200 is a device that directly converts heat energy into electrical energy using the temperature difference effect. When the junction of two different metals (or semiconductors) is subjected to a temperature difference, an electromotive force is generated at the junction; this effect is called the Seebeck effect. Thermoelectric generator 200 utilizes this effect to convert temperature difference into electrical energy. When there is a temperature difference between the hot and cold ends of the thermoelectric generator 200, the p- and n-type semiconductor electrocoupler arms simultaneously drive the movement of holes and electrons, thereby generating a potential difference at the output end. When a closed loop is formed, a continuous direct current output is generated. In this embodiment, a semiconductor material structure is disposed between the third power generation layer 210 and the fourth power generation layer 220.

[0041] It is understandable that the third power generation layer 210 (hot end layer) is reused with at least part of the second power generation layer 120. This means that a portion of the photovoltaic power generation module 100 also serves as the hot end layer of the thermoelectric power generation module 200. This design saves materials, improves space utilization, and allows the thermal break to better absorb the heat emitted by the photovoltaic power generation module 100, thus improving power generation efficiency. The parallel connection of the photovoltaic power generation module 100 and the thermoelectric power generation module 200 means that the current they generate can flow together to the same load or energy storage device. This arrangement improves the overall power generation efficiency and flexibility of the device.

[0042] In related technologies, photovoltaic power generation module 100 and thermoelectric power generation module 200 are usually set up separately, but this leads to low power generation efficiency of the self-generating device. However, the self-generating device in this application includes photovoltaic power generation module 100 and thermoelectric power generation module 200. The heat generated by photovoltaic power generation module 100 during power generation can meet the heat requirements of thermoelectric power generation module 200, so as to play the role of joint power generation and parallel output, which is conducive to improving power generation efficiency. Moreover, in the case of a scenario without light source but with heat source, thermoelectric power generation module 200 can continue to generate electricity, which is conducive to further improving the power generation efficiency of the self-generating device.

[0043] In some embodiments of this application, please refer to Figure 2 , Figure 2 A schematic diagram of the self-generating device provided in this embodiment is shown. The photovoltaic power generation module 100 of this embodiment includes a front electrode 130 and a back electrode 140. The front electrode 130 is disposed on the side of the first power generation layer 110 away from the second power generation layer 120. The back electrode 140 is disposed on the side of the second power generation layer 120 away from the first power generation layer 110. The front electrode 130 is one of the negative electrode and the positive electrode, and the back electrode 140 is the other of the negative electrode and the positive electrode.

[0044] It should be explained that the front electrode 130 connects to the first power generation layer 110 and serves as one of the power output terminals of the photovoltaic power generation module 100. The front electrode 130 is responsible for collecting electrons generated by light energy and guiding them to the external circuit. The back electrode 140 is responsible for collecting holes (or positive charges) generated by light energy and guiding them to the external circuit. Simultaneously, the back electrode 140 also serves to support and protect the power generation layer. The front electrode 130 is typically made of materials with high conductivity and good corrosion resistance, such as aluminum. These materials can form low-resistance paths, allowing current to flow easily from the photovoltaic cell. The back electrode 140 also needs to have high conductivity and good stability. In some cases, the back electrode 140 may also need to reflect sunlight to improve the light absorption efficiency of the module.

[0045] Please refer to the embodiments described in this application. Figure 2 The thermoelectric power generation component 200 of this embodiment includes a thermoelectric semiconductor 230, which is disposed between the third power generation layer 210 and the fourth power generation layer 220; one end of the thermoelectric semiconductor 230 is disposed in the same layer as the back electrode 140, and the other end of the thermoelectric semiconductor 230 is disposed close to the fourth power generation layer 220.

[0046] It should be explained that the thermoelectric semiconductor 230 is the core material in the thermoelectric power generation module 200, which utilizes the Seebeck effect to directly convert heat energy into electrical energy. When a temperature difference exists between the third power generation layer 210 (hot end) and the fourth power generation layer 220 (cold end), the charge carriers (electrons or holes) in the thermoelectric semiconductor 230 will move directionally under the drive of the temperature gradient, thereby generating a potential difference across the thermoelectric semiconductor 230. This potential difference can be collected and utilized through an external circuit, thus realizing the conversion of heat energy into electrical energy. In the thermoelectric power generation module 200, heat energy is transferred to the thermoelectric semiconductor 230 through the third power generation layer 210 (hot end). Driven by the temperature gradient, the thermoelectric semiconductor 230 converts heat energy into electrical energy. The generated electrical energy is then conducted to the external circuit through the back electrode 140 and possibly other electrode structures. At the same time, in order to maintain the stable operation of the module, the fourth power generation layer 220 (cold end) continuously absorbs and dissipates heat to maintain the temperature difference across the module.

[0047] Please refer to the embodiments described in this application. Figure 2 In this embodiment, there are multiple thermoelectric semiconductors 230, which are spaced apart. The multiple thermoelectric semiconductors 230 are connected in series, and each thermoelectric semiconductor 230 includes a first semiconductor and a second semiconductor located at the beginning and end. The first semiconductor and the front electrode 130 are connected together to form the first output electrode of the self-generating device. The second semiconductor and the back electrode 140 are connected together to form the second output electrode of the self-generating device.

[0048] Understandably, the spaced arrangement of multiple thermoelectric semiconductors 230 helps reduce thermal interference between them, thereby improving the overall thermoelectric conversion performance. Furthermore, the multiple thermoelectric semiconductors 230 are connected in series to form a thermopile. This series connection allows the electromotive force generated by each thermoelectric semiconductor 230 to be accumulated, thereby increasing the output voltage and meeting higher power demands.

[0049] Please refer to the embodiments described in this application. Figure 2 In this embodiment, the first output electrode is negative and the second output electrode is positive. In some embodiments, the first power generation layer 110 is an N-type semiconductor layer and the second power generation layer 120 is a P-type semiconductor layer. In some embodiments, the thermoelectric semiconductor 230 is an N-type semiconductor structure.

[0050] Please refer to the embodiments described in this application. Figure 2 In this embodiment, the front electrode 130 is provided with a hollow portion 131, and the photovoltaic power generation module 100 also includes an anti-reflection layer 150. The anti-reflection layer 150 is disposed in the same layer as the front electrode 130, and the anti-reflection layer 150 fills the hollow portion 131.

[0051] It should be explained that the antireflection layer 150 is a material layer used to reduce light reflection on the surface of the module. It is typically disposed in the same layer as the front electrode 130 and fills the hollow portion 131 of the front electrode 130. The main function of the antireflection layer 150 is to increase the depth of light incidence and reduce light reflection loss on the module surface, thereby improving the module's light absorption efficiency and photoelectric conversion efficiency. The material of the antireflection layer 150 typically has a low refractive index to achieve good refractive index matching with other parts of the module (such as the front electrode 130 and the power generation layer). Common antireflection layer 150 materials include silicon nitride (SiN) and titanium dioxide (TiO2). These materials not only have excellent antireflection properties but also good stability and corrosion resistance.

[0052] In some embodiments of this application, please refer to Figure 3 , Figure 3 This embodiment provides the following: Figure 2 A partial enlarged schematic diagram of structure A. In this embodiment, the second power generation layer 120 includes a first portion 121 that is away from the first power generation layer 110, and the first portion 121 is reused with the third power generation layer 210.

[0053] Please refer to the embodiments described in this application. Figure 2 The self-generating device in this embodiment also includes a heat dissipation layer 300, which is disposed on the side of the fourth power generation layer 220 away from the third power generation layer 210.

[0054] Understandably, the heat dissipation layer 300 is positioned on the side of the fourth power generation layer 220 opposite to the third power generation layer 210. Its primary function is to effectively dissipate the heat absorbed by the fourth power generation layer 220 (cold end layer) into the environment, maintaining the component's temperature within a reasonable range. The heat dissipation layer 300 needs to be in close contact with the fourth power generation layer 220 to ensure efficient heat transfer. The heat dissipation layer 300 can be a heat sink, heat dissipation fins, heat pipes, etc., structures that increase the heat dissipation area and improve heat dissipation efficiency. The materials of the heat dissipation layer 300 typically possess high thermal conductivity and good mechanical properties, such as copper, aluminum, and graphene. These materials effectively transfer heat from the fourth power generation layer 220 to the environment while maintaining structural stability and durability.

[0055] In some embodiments of this application, a voltage regulating element is provided between the output terminal of the photovoltaic power generation module 100 and the output terminal of the thermoelectric power generation module 200. The voltage regulating element is used to balance the output voltage of the photovoltaic power generation module 100 and the output voltage of the thermoelectric power generation module 200.

[0056] It should be explained that, due to the differences in their operating principles and power generation conditions, the photovoltaic power generation module 100 and the thermoelectric power generation module 200 often have different output voltages. The main function of the voltage regulating element is to adjust the output voltage of these two modules, enabling them to work together at a common voltage level, thereby avoiding energy loss or system instability caused by voltage mismatch. In this embodiment, by precisely adjusting the output voltage, the voltage regulating element can ensure that the output power of both the photovoltaic power generation module 100 and the thermoelectric power generation module 200 is effectively utilized, reducing losses during the energy conversion process and improving the overall power generation efficiency of the system.

[0057] In some embodiments, the types of voltage regulating elements include, but are not limited to, voltage regulators, DC-DC converters, transformers, etc.

[0058] Please refer to the embodiments described in this application. Figure 2 In this embodiment, the photovoltaic power generation module 100 adopts a PN junction 160 structure, with the N-type semiconductor located on top, directly receiving sunlight. When photons irradiate the N-type layer, they excite electrons and form photogenerated electron-hole pairs. At this time, electrons flow from the N-type semiconductor to the P-type semiconductor, while holes concentrate in the P-type semiconductor, completing the generation of photocurrent. These holes accumulate in the P-type semiconductor, flow through external circuits, form current, and drive the load.

[0059] In the thermoelectric power generation module 200 of this embodiment, the N-type semiconductor is subjected to temperature difference. The hot end absorbs the waste heat generated during photovoltaic power generation, while the cold end is kept at a lower temperature by a heat sink. The high temperature at the hot end causes electrons in the N-type semiconductor to gain energy and move towards the cold end, forming an electron flow. However, the unique feature of the thermoelectric power generation section is that it shares a P-type semiconductor with the photovoltaic power generation section. The thermoelectric power generation module does not have an independent P-type semiconductor. After electrons move from the N-type semiconductor to the cold end, they combine with holes in the shared P-type semiconductor to form a potential difference, driving the generation of thermocurrent.

[0060] In this embodiment, the positive electrodes of the photovoltaic power generation module 100 and the thermoelectric power generation module 200 are integrated together, further simplifying the circuit structure and improving the system's compactness. Through this integrated design, photovoltaic power generation and thermoelectric power generation not only share the P-type semiconductor but also achieve parallel output of the two currents through the integrated positive electrode. The photocurrent generated by the photovoltaic module and the thermoelectric current generated by the thermoelectric power generation module converge at the positive electrode and then drive the device through an external load. This not only reduces the complexity of materials and wiring but also improves the overall efficiency of the power generation system, ensuring the coordinated operation of the photovoltaic and thermoelectric power generation modules and achieving more efficient energy conversion.

[0061] Furthermore, in order to better implement the self-generating device in any of the above embodiments, this application also provides an electrical device that includes the self-generating device described above.

[0062] It should be noted that the self-generating device in this application can be applied to lunar exploration equipment or other equipment in remote, extreme environments where power transmission or maintenance is inconvenient. Specifically, the current energy supply on the moon mainly relies on solar cells, and the power generation efficiency directly affects the power supply performance of spacecraft. However, semiconductor materials have limited light absorption efficiency, and unconverted light energy is often lost as heat, especially under high-temperature conditions. This loss leads to a significant decrease in the power generation efficiency of photovoltaic systems.

[0063] In the related technologies of this application, a photovoltaic power generation module 100 and a thermoelectric power generation module 200 are combined. However, since thermoelectric power generation relies on a large temperature gradient, maintaining a stable temperature difference is difficult, which can easily lead to unstable power output. However, in this application, by sharing a P-type semiconductor layer in the photovoltaic and thermoelectric power generation modules (the second power generation layer 120 and the third power generation layer 210 are reused), the utilization efficiency of waste heat generated by the solar panels is significantly improved. Moreover, the shared P-type semiconductor not only reduces the amount of materials used in the system but also greatly simplifies the system structure, significantly improving the system's compactness and integration. This innovative design provides a more efficient solution for power supply in future lunar and other planetary exploration missions, and also has great potential for applications in extreme environments on Earth.

[0064] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0065] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0066] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0067] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.

[0068] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A self-generating power device, characterized in that, include: A photovoltaic power generation module includes a first power generation layer and a second power generation layer stacked together, wherein the first power generation layer is one of an N-type semiconductor layer and a P-type semiconductor layer, and the second power generation layer is the other of an N-type semiconductor layer and a P-type semiconductor layer; A thermoelectric power generation module includes a third power generation layer and a fourth power generation layer, wherein the third power generation layer is a hot end layer and the fourth power generation layer is a cold end layer; the third power generation layer is reused with at least a portion of the second power generation layer, and the fourth power generation layer is disposed on the side of the second power generation layer away from the first power generation layer; The photovoltaic power generation module and the thermoelectric power generation module are connected in parallel. The second power generation layer includes a first portion that is opposite to the first power generation layer, and the first portion is multiplexed with the third power generation layer; The self-generating device also includes a heat dissipation layer, which is disposed on the side of the fourth power generation layer away from the third power generation layer; The photovoltaic power generation module includes: The front electrode is disposed on the side of the first power generation layer that is away from the second power generation layer; The back electrode is disposed on the side of the second power generation layer that is away from the first power generation layer. The front electrode is one of the negative electrode and the positive electrode, and the back electrode is the other of the negative electrode and the positive electrode. The thermoelectric power generation component includes a thermoelectric semiconductor, which is disposed between the third power generation layer and the fourth power generation layer; one end of the thermoelectric semiconductor is disposed in the same layer as the back electrode, and the other end of the thermoelectric semiconductor is disposed close to the fourth power generation layer; The number of thermoelectric semiconductors is multiple, and the multiple thermoelectric semiconductors are arranged at intervals; The thermoelectric semiconductors are connected in series, and the thermoelectric semiconductors include a first semiconductor and a second semiconductor located at the beginning and end of the circuit. The first semiconductor and the front electrode are connected together to form the first output electrode of the self-generating device. The second semiconductor and the back electrode are connected together to form the second output electrode of the self-generating device.

2. The self-generating device according to claim 1, characterized in that, The first output electrode is negative, and the second output electrode is positive. Or, the first power generation layer is an N-type semiconductor layer, and the second power generation layer is a P-type semiconductor layer; Or, the thermoelectric semiconductor is an N-type semiconductor structure.

3. The self-generating device according to claim 1, characterized in that, The front electrode has a hollow portion, and the photovoltaic power generation module also includes an anti-reflection layer, which is disposed in the same layer as the front electrode and fills the hollow portion.

4. The self-generating device according to any one of claims 1 to 3, characterized in that, A voltage regulating element is provided between the output terminal of the photovoltaic power generation module and the output terminal of the thermoelectric power generation module. The voltage regulating element is used to balance the output voltage of the photovoltaic power generation module and the output voltage of the thermoelectric power generation module.

5. An electrical appliance, characterized in that, Includes the self-generating device as described in any one of claims 1 to 4.

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