Power switch device and electronic equipment

Abstract

The invention discloses a power switching device and electronic equipment. The power switching device comprises an active region; a terminal area; a gate pad; the groove grids extend along a first direction and are arranged at intervals along a second direction, and the first direction is perpendicular to the second direction; a gate bus surrounding the active region and electrically connected with the gate pad, the gate bus including: a first gate bus connected with a first side of the gate pad, and a portion of the first gate bus extending in a second direction; a second gate bus connected to a second side of the gate pad, and a portion of the second gate bus extending in a second direction; the at least one gate finger extends along the second direction and is connected with the first gate bus or the second gate bus; the gate bus and the gate pad at least partially surround the active region. Through the arrangement of the gate bus, the gate bonding pad and the gate fingers, the trench gate far away from the gate bonding pad can obtain enough current, and the current distribution in the active region is more uniform.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a power switch device and an electronic device. Background Art

[0002] With the development of science and technology, power switching devices, such as IGBT (Insulated Gate Bipolar Transistor), are increasingly used. The demand for high-current IGBTs is increasing. As the current capacity increases, the size of the IGBT chip also increases, resulting in uneven current distribution and uneven heat distribution in the active area. Summary of the invention

[0003] A series of simplified concepts are introduced in the Summary of the Invention section, which will be further described in detail in the Detailed Description of the Invention section. The Summary of the Invention section of this application does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the scope of protection of the claimed technical solution.

[0004] In order to solve the above problems, the present application provides a power switch device on one hand, wherein the power switch device comprises:

[0005] Active area;

[0006] A terminal region, arranged at the periphery of the active region;

[0007] A plurality of trench gates are arranged in the active area, the plurality of trench gates are extended along a first direction and are spaced apart along a second direction, and the first direction intersects the second direction;

[0008] a gate bus disposed at least partially between the active region and the terminal region;

[0009] A gate pad is disposed between the terminal region and the active region, the gate pad being configured to have an electrical connection region exposed on the surface for being electrically connected to the gate bus;

[0010] Wherein, the gate bus comprises:

[0011] A first gate bus connected to a first side of the gate pad, and a portion of the first gate bus extending along the second direction;

[0012] A second gate bus connected to a second side of the gate pad, and a portion of the second gate bus extends along the second direction, wherein the first side intersects with the second side;

[0013] At least one gate finger, each of the gate fingers is extended along the second direction and one end of each gate finger is connected to the first gate bus or the second gate bus; wherein,

[0014] The gate bus and the gate pad form an enclosed shape to at least partially surround the active area.

[0015] The above technical solution has the following advantages and beneficial effects: by setting a connected gate bus and gate pad between the active area and the terminal area, the driving signal flows from the gate pad and is transmitted to each trench gate through the gate bus, or the output current from the trench gate flows out to the gate pad through the gate bus to realize the opening or closing of the power switching device, and then the partition is performed through the gate finger to prevent the current from being too concentrated in the edge area of ​​the active area, so that the current distribution in the active area is more uniform, thereby improving the uniformity of the heat distribution.

[0016] Exemplarily, the active area has a diagonal line, one end of the diagonal line is close to the gate pad, the first gate bus and the second gate bus are respectively located on both sides of the diagonal line, and the first gate bus, the second gate bus and the gate pad form an enclosed shape that at least partially surrounds the active area.

[0017] The above technical solution has the following advantages and beneficial effects: the first gate bus and the second gate bus are arranged on both sides of the diagonal line to form an enclosed shape, so that the current flowing out from the gate pad can flow to the trench gate in the active area through the first gate bus and the second gate bus, so that the trench gate farther away from the gate pad can also obtain the corresponding current, thereby enhancing the uniformity of current distribution.

[0018] Exemplarily, the gate pad is disposed in a corner region of the enclosed shape and protrudes toward a side where the active region is located.

[0019] The above technical solution has the following advantages and beneficial effects: arranging the gate pad in the corner area not only helps to keep the device layout neat and orderly, improves the aesthetics and maintainability, but also reduces electromagnetic interference with other devices, and reduces noise and errors.

[0020] Exemplarily, the first gate bus comprises:

[0021] A first branch line, a first end of the first branch line is connected to the first side of the gate pad, and the first branch line extends along the first direction;

[0022] A second branch line, wherein a first end of the second branch line is connected to a second end of the first branch line, and the second branch line extends along the second direction and crosses over a plurality of the trench gates.

[0023] The above technical solution has the following advantages and beneficial effects: by having a first branch line and a second branch line in the first gate bus, the second branch line is used to achieve electrical connection with the multiple trench gates it crosses, and the first branch line is used to achieve electrical connection with the gate pad, thereby forming an effective current path to allow current to flow from the gate pad to the multiple trench gates or flow out from the multiple trench gates to the gate pad.

[0024] Exemplarily, the second gate bus comprises:

[0025] a third branch line, a first end of the third branch line connected to the second side of the gate pad, and the third branch line spans across the plurality of trench gates along the second direction;

[0026] A fourth branch line, a first end of the fourth branch line is connected to the second end of the third branch line, and the fourth branch line extends along the first direction.

[0027] The above technical solution has the following advantages and beneficial effects: similarly to the first gate bus, the electrical connection with the multiple trench gates it crosses is achieved through the third branch line, and the electrical connection between the second branch line and the gate pad is achieved through the fourth branch line, thereby forming an effective current path to allow current to flow from the gate pad to the multiple trench gates or flow out from the multiple trench gates to the gate pad.

[0028] Exemplarily, the gate finger includes a first gate finger and a second gate finger, wherein one end of the first gate finger is connected to the first branch line, and the first gate finger extends into the active area, one end of the second gate finger is connected to the second end of the fourth branch line, and the second gate finger extends into the active area, and the first gate finger and the second gate finger are spaced apart in the second direction.

[0029] The above technical solution has the following advantages and beneficial effects: the two gate fingers arranged at intervals can divide the active area into more areas to prevent the current from being excessively concentrated in the edge area of ​​the active area, thereby making the current distribution more uniform.

[0030] Exemplarily, the first gate fingers and the second gate fingers are arranged opposite to each other and spaced apart.

[0031] The above technical solution has the following advantages and beneficial effects: by arranging the first gate fingers and the second gate fingers relatively spaced apart, the active area can be divided into several relatively uniform areas, thereby facilitating uniform current distribution.

[0032] Exemplarily, the length of the second branch line in the second direction is set to D, the length of the first gate bus is set to L1, the length of the second gate finger in the second direction is set to L2, and the length of the second gate bus is set to L3, then |L1-(L2+L3)|≤0.2D.

[0033] The above technical solution has the following advantages and beneficial effects: by limiting the relationship between the length of the first gate bus (including the total length and the length of the second branch line in the second direction) and the length of the second gate finger and the second gate bus, the length of the first current path formed by the first gate bus and the length between the second gate finger and the second gate bus are as close as possible, so that the time when the drive signal input from the gate pad reaches the multiple trench gates becomes more consistent or the time when the current output from the multiple trench gates reaches the gate pad becomes more consistent, so that the areas controlled by the multiple trench gates are turned on or off as synchronously as possible, which improves the current distribution in the active area, thereby making the current distribution more uniform and improving the uniformity of heat distribution.

[0034] Exemplarily, the length of the second branch line in the second direction is set to D, the length of the third branch line is set to L4, the length of the first gate finger in the second direction is set to L5, and the length of the first gate bus between the first gate finger and the gate pad is set to L6, then |L4-(L5+L6)|≤0.2D.

[0035] The above technical solution has the following advantages and beneficial effects: by limiting the relationship between the length of the third branch of the second gate bus and the length of the first gate finger and the length of the first gate bus located between the first gate finger and the gate pad, the length of the third current path formed by the first gate finger and the first gate bus between the first gate finger and the gate pad and the length of the fourth current path formed by the third branch of the second gate bus are as close as possible, so that the time when the drive signal input from the gate pad reaches the multiple trench gates becomes more consistent or the time when the current output from the multiple trench gates reaches the gate pad becomes more consistent, thereby improving the current distribution in the active area and making the current distribution more uniform.

[0036] Exemplarily, the length of the second branch line in the second direction is set to D, then the lengths of the first gate finger and the second gate finger in the second direction are both 1 / 3D; and\or

[0037] In the first direction, the distances between the first gate finger and the second gate finger and the second branch line are both 1 / 2D; and\or

[0038] In the first direction, the distance between the first gate finger and the second branch line is equal to the distance between the first gate finger and the third branch line, and the distance between the second gate finger and the second branch line is equal to the distance between the second gate finger and the third branch line.

[0039] The above technical solution has the following advantages and beneficial effects: by limiting the length relationship between the first gate finger and the second gate finger and the distance between the first gate finger and the second gate finger and the second branch line, it is helpful to improve the problem of excessive current concentration and improve the uniformity of current distribution. In addition, through such a setting, the length difference between the parts of the gate bus that serve as different current paths can be shortened as much as possible, thereby making the current distribution uniformity and heat distribution uniformity in the active area better.

[0040] Exemplarily, the length of the second branch line in the second direction is set to D, the lengths of the first gate finger and the second gate finger in the second direction are both 1 / 3D, and

[0041] In the first direction, the distances between the first gate finger and the second gate finger and the second branch line are both 1 / 2D.

[0042] The above technical solution has the following advantages and beneficial effects: by limiting the length of the first gate finger and the second gate finger so that the length of the first gate finger and the second gate finger are the same, and the length of the first gate finger and the second gate finger is also equal to the length of the interval between the first gate finger and the second gate finger. Through such a setting, the length difference between the parts of the gate bus that serve as different current paths can be shortened as much as possible, thereby making the current distribution uniformity and heat distribution uniformity in the active area better.

[0043] Exemplarily, the first branch line is parallel to and opposite to the fourth branch line, and the second branch line is parallel to and opposite to the third branch line.

[0044] The above technical solution has the following advantages and beneficial effects: through such a setting, the active area can be effectively surrounded by the first gate bus and the second gate bus, so that the driving signal can effectively flow into the multiple trench gates in the active area, and the current of the multiple trench gates can be output to the gate pad, so as to turn on or off the power switching device, and help to achieve better current distribution uniformity.

[0045] Exemplarily, the first branch line and the third branch line are equal in length.

[0046] The above technical solution has the following advantages and beneficial effects: through such a setting, the length difference between the parts of the gate bus that serve as different current paths can be shortened as much as possible, thereby making the current distribution uniformity and heat distribution uniformity in the active area better.

[0047] Exemplarily, the gate bus further includes:

[0048] a third gate bus, a first end of the third gate bus connected to the second end of the second branch line, and the third gate bus extending along the first direction toward one side of the fourth branch line;

[0049] a fourth gate bus, wherein a first end of the fourth gate bus is connected to a second end of the fourth branch line, and the fourth gate bus extends along the first direction toward the third gate bus, wherein:

[0050] The third gate bus line and the fourth gate bus line are spaced apart from each other in the first direction.

[0051] The above technical solution has the following advantages and beneficial effects: by setting the third gate bus and the fourth gate bus, the contact area with the gate polysilicon layer thereunder can be increased, the contact resistance can be reduced, thereby improving the signal transmission speed, and it is also helpful to disperse the current, reduce the formation of hot spots, improve thermal stability, and help maintain the normal operation of the device at high temperatures. Therefore, by setting the third gate bus and the fourth gate bus, the stability of the device can be effectively improved.

[0052] Exemplarily, the third gate bus and the fourth gate bus are arranged opposite to each other and spaced apart; and / or,

[0053] The third gate bus line and the fourth gate bus line have the same length.

[0054] The above technical solution has the following advantages and beneficial effects: through such a setting, the shape and structure of the gate bus can be made more regular, the complexity of the gate bus wiring can be simplified, the gate bus can transmit current more smoothly, reduce current congestion and loss, and improve the overall performance of the device.

[0055] Exemplarily, the first direction is perpendicular to the second direction.

[0056] The above technical solution has the following advantages and beneficial effects: through such a setting, the arrangement of the gate bus can be more reasonable, the space on the chip can be used more effectively, and the complexity of the gate bus wiring can be simplified, so that the gate bus can transmit current more smoothly, reduce current congestion and loss, and improve the overall performance of the device.

[0057] Exemplarily, the power switch device includes an IGBT or an RC-IGBT.

[0058] The above technical solution has the following advantages and beneficial effects: the trench gate structure optimizes the current path, making the switching speed of the IGBT faster, helping to reduce switching losses and improve the overall efficiency of the power electronic system.

[0059] On one hand, the present application provides an electronic device, which includes the power switch device as described above.

[0060] The above technical solution has the following advantages or beneficial effects: the above power switch device is included in the electronic device, and thus has similar advantages to the above power switch device. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] The following drawings of the present application are hereby used as part of the present application for understanding the present application. The drawings show the embodiments of the present application and their descriptions, and are used to explain the device and principle of the present application. In the drawings,

[0062] Figure 1 A schematic diagram of a power switch device according to a first embodiment of the present application is shown;

[0063] Figure 2 Shows Figure 1 Schematic diagram of the length relationship of some components in a power switching device;

[0064] Figure 3A-3D Shows Figure 1 Schematic diagram of four different current paths in a power switching device;

[0065] Figure 4 A schematic diagram of a power switch device according to a second embodiment of the present application is shown;

[0066] Figure 5A-5G The various stages of the manufacturing steps of the power switch device according to the embodiment of the present application are shown in FIG. Figure 1 An exemplary cross-sectional view at A1 of FIG.

[0067] Figure 6 The manufacturing steps of the power switch device according to the embodiment of the present application are shown in FIG. Figure 1 An exemplary cross-sectional view at A2 of FIG.

[0068] Figure 7 A schematic block diagram of an electronic device according to an embodiment of the present application is shown.

[0069] In the accompanying drawings,

[0070] 10 active region; 11 transition region; 20 terminal region; 30 gate pad; 40 trench gate; 50 first gate bus; 501 first branch line; 502 second branch line; 51 second gate bus; 511 third branch line; 512 fourth branch line; 52 third gate bus; 53 fourth gate bus; 601 first gate finger; 602 second gate finger; 70 diagonal line; 700 substrate; 7001 first surface; 7002 second surface; 7003 drift region; 7 01 gate trench; 702 gate trench insulating film; 703 gate trench electrode; 704 body region; 705 emitter layer; 706 interlayer insulating film; 707 contact hole; 7081 emitter metal layer; 714 gate polysilicon layer; 7083 terminal region metal layer; 709 buffer layer; 710 collector layer; 711 collector metal layer; 712 polysilicon layer; 7131P well region; 7132P injection region; 713 guard ring; 800 electronic device. DETAILED DESCRIPTION

[0071] In the following description, a large number of specific details are provided to provide a more thorough understanding of the present application. However, it is apparent to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features well known in the art are not described.

[0072] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0073] It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.

[0074] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used herein for convenience of description to describe the relationship of one element or feature to other elements or features shown in the figures. It should be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation shown in the figures.

[0075] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "a", "an" and " / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0076] Embodiments of the invention are described herein with reference to cross-sectional views as schematic diagrams of ideal embodiments (and intermediate structures) of the present application. Thus, variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances can be expected. Therefore, embodiments of the present application should not be limited to the specific shapes shown herein, but include shape deviations due to, for example, manufacturing. Therefore, what is shown in the figures is schematic in nature, and their shapes are not intended to display the actual shape of the device and are not intended to limit the scope of the present application.

[0077] With the development of science and technology, power switching devices, such as IGBT (Insulated Gate Bipolar Transistor), are being used more and more widely. The demand for high-current IGBTs is increasing. With the rapid development of new energy vehicles, wind power, photovoltaics, energy storage and other fields, the demand for power devices IGBT is increasing. In terms of market demand, IGBT, as a core component in new energy vehicles, has been widely used in the field of new energy vehicles and has an important impact on the performance of the entire vehicle. At the same time, emerging industries such as wind, light and storage have also provided sufficient impetus for the growth of IGBT. In terms of technological development, the maximum current capacity of common IGBT products on the market is generally between tens of amperes and hundreds of amperes. As the current capacity increases, the size of IGBT chips also increases. For high-current chips, the chip area is large, and there is a certain voltage drop and parasitic capacitance from the gate pad to the farther trench gate, resulting in asynchronous trench gate switching. When the chip is turned on, the trench gate close to the gate pad is turned on first, and due to the existence of parasitic capacitance and parasitic resistance, the trench gate far from the gate pad is turned on later or even not turned on; when the chip is turned off, the trench gate close to the gate pad is turned off first, and due to the existence of parasitic capacitance and parasitic resistance, the trench gate far from the gate pad is turned off later or even burned out, resulting in asynchronous and uneven conduction of the trench gate switches, thereby making the current distribution in the IGBT uneven, which further leads to uneven heat distribution.

[0078] In view of the above problems, the present application provides a power switch device. Figure 1 As shown, Figure 1 The top view of a power switch device is generally a square. The power switch device includes: an active area 10, a terminal area 20 disposed outside the active area 10, and a transition area 11 disposed between the active area 10 and the terminal area 20, that is, the terminal area 20 surrounds the active area 10 and the transition area 11. Figure 1 As shown, the area within the two dotted boxes represents the transition area 11; a plurality of trench gates 40 are arranged in the active area 10, and the plurality of trench gates 40 are extended along a first direction (for example, a horizontal direction) and are arranged at intervals along a second direction, and the first direction and the second direction intersect. The first direction and the second direction are two non-parallel or non-overlapping intersecting directions, and illustratively, the first direction and the second direction are perpendicular. Through such an arrangement, the arrangement of the gate bus can be made more reasonable, the space on the chip can be used more effectively, and the complexity of the gate bus wiring can be simplified, so that the gate bus can transmit the current more smoothly, reduce current congestion and loss, and improve the overall performance of the device.

[0079] Exemplarily, the active region 10 is a part that undertakes the basic functions of the power switch device, the terminal region 20 is a part used to improve the withstand voltage characteristics of the power switch device under static conditions, stabilize and improve reliability and ensure the damage tolerance under dynamic conditions, and the transition region 11 is a part that connects the active region 10 and the terminal region 20. In some embodiments, the power switch device can be an IGBT, or a reverse-conducting IGBT (also known as an RC-IGBT), or a MOSFET, wherein the reverse-conducting IGBT is formed by integrating an IGBT and a diode (for example, a fast recovery diode, Fast Recovery Diode, FRD) on the same semiconductor substrate. When the power switch device is an IGBT, the active region 10 is a part that undertakes the basic functions of the IGBT, and the active region 10 includes an IGBT region; when the power switch device is a reverse-conducting IGBT, for example, the IGBT and the FRD are integrated together, the active region 10 is a part that undertakes the basic functions of the IGBT and the FRD, and the active region 10 includes an IGBT region and a diode region, such as an FRD region.

[0080] The gate bus line 50 is at least partially disposed between the active region 10 and the terminal region 20 , that is, the gate bus line is at least partially disposed in the transition region 11 .

[0081] In one example, if Figure 6As shown, the IGBT unit in the IGBT region includes a substrate 700, an emitter metal layer 7081, a collector metal layer 711, a buffer layer 709 (FS), a trench gate 40, a gate polysilicon layer 714, a gate bus 50, an interlayer insulating film 706, a drift region of the first conductivity type, a body layer 704 of the second conductivity type, an emitter layer 705 of the first conductivity type, and a collector layer 710 of the second conductivity type. It is worth mentioning that Figure 6 The number of trench gates shown is only a schematic representation for convenience of description. Figure 5A-5G The number of trench gates shown is different, but the effect achieved is the same Figure 5A-5G The effect is consistent.

[0082] It is worth mentioning that the first conductivity type may be N-type and the second conductivity type may be P-type, or the first conductivity type may be P-type and the second conductivity type may be N-type. In the embodiments of the present application, the case where the first conductivity type may be N-type and the second conductivity type may be P-type is mainly taken as an example.

[0083] The substrate 700 has a first surface 7001 and a second surface 7002 opposite to each other, and the first surface 7001 and the second surface 7002 both span the active region 10, the transition region 11, and the terminal region 20. The drift region 7003 is located in the substrate 700, for example, the drift region 7003 is arranged between the first surface 7001 and the second surface 7002, and the drift region 7003 spans the active region 10, the transition region 11, and the terminal region 20.

[0084] A body layer 704 is provided on the first surface 7001 side of the drift region 7003, an emitter layer 705 is provided on the first surface 7001 side of the body layer 704, a gate trench is formed on the substrate 700 that penetrates the emitter layer 705 and the body layer 704 from the first surface 7001 to reach the drift region 7003, and a gate trench electrode is provided in the gate trench through a gate trench insulating film (not shown), thereby forming a trench gate 40. The gate trench electrode faces the drift region 7003 through the gate trench insulating film. The gate insulating film of the trench gate 40 is in contact with the body layer 704 and the emitter layer 705. If a gate driving voltage is applied to the gate trench electrode, the body layer 704 in contact with the gate trench insulating film of the trench gate 40 forms a channel.

[0085] A first conductive type buffer layer 709 having a higher concentration of first conductive type impurities than the drift region 7003 is provided on the second surface 7002 side of the drift region 7003. The buffer layer 709 is provided to suppress the breakdown of the depletion layer extending from the body layer 704 to the second surface 7002 side when the power switch device is in the off state. The buffer layer 709 may be formed by injecting phosphorus (P) or protons (H+), or may be formed by injecting both phosphorus (P) and protons (H+). In addition, the power switch device may also be provided without the buffer layer 709, and the buffer layer 709 may also be provided as the drift region 7003. The buffer layer 709 and the drift region 7003 may also be combined and referred to as the drift region 7003.

[0086] The collector layer 710 is disposed on the side of the buffer layer 709 away from the first surface 7001 , that is, the collector layer 710 is disposed between the drift region 7003 and the second surface 7002 . The collector layer 710 constitutes the second surface 7002 of the substrate 700 .

[0087] A collector metal layer 711 is further disposed on a side of the collector layer 710 away from the first surface 7001 and is in contact with the collector layer 710 to form a conductive contact.

[0088] An interlayer insulating film 706 is disposed on the active region 10 , the terminal region 20 and the transition region 11 for electrical isolation.

[0089] The interlayer insulating film 706 of the active region 10 is disposed on the first surface 7001 . An emitter metal layer 7081 is disposed on the interlayer insulating film 706 of the active region 10 . The emitter metal layer 7081 is electrically connected to the emitter layer 705 through a contact hole of the interlayer insulating film 706 .

[0090] A second conductive type guard ring 713 is disposed on the first surface 7001, for example, in a P-type. Exemplarily, the guard ring has a P-well region 7131 and a P-injection region 7132. The P-well region 7131 is located in the transition region 11, the P-injection region 7132 is located in the terminal region 20, the P-well region 7131 and the P-injection region 7132 are arranged at intervals, and the P-well region 7131 is arranged at intervals on one side close to the active region 10 and the trench gate 40. The number of the P-injection regions 7132 may be one or more, and when there are multiple P-injection regions 7132, the multiple P-injection regions 7132 are arranged at intervals from each other corresponding to the voltage to be maintained.

[0091] The gate polysilicon layer 714 is located in the transition region 11 , disposed on the first surface 7001 , and located above the P-well region 7131 . The gate bus 50 is located on the gate polysilicon layer 714 and electrically connected to the gate polysilicon layer 714 .

[0092] The interlayer insulating film 706 of the transition region 11 includes an interlayer insulating film 706 surrounding the gate polysilicon layer 714 and an interlayer insulating film (not shown) disposed between the gate polysilicon layer 714 and the substrate 700. The interlayer insulating film disposed between the gate polysilicon layer 714 and the substrate 700 isolates the substrate 700 and the gate polysilicon layer 714 from each other. The gate bus 50 is disposed on the interlayer insulating film 706 surrounding the gate bus 50 of the transition region 11. The gate bus 50 is electrically connected to the gate polysilicon layer 714 through a contact hole in the interlayer insulating film 706 surrounding the gate polysilicon layer 714. The transition region 11 is also provided with an emitter metal layer 7081. The gate polysilicon layer 714 and the gate bus 50 are spaced apart from the transition region 11 and the emitter metal layer 7081 of the active region 10. The emitter metal layer 7081 of the transition region 11 is connected to the emitter metal layer 7081 of the active region 10. Optionally, the gate bus 50 is electrically connected to the trench gate in the active area through the gate polysilicon layer 714 .

[0093] The interlayer insulating film 706 of the terminal region 20 is disposed on the first surface 7001, and a polysilicon layer 712 is also disposed correspondingly above each P-injection region 7132, and the interlayer insulating film 706 of the terminal region 20 covers the polysilicon layer 712. The terminal region 20 is also provided with a terminal region metal layer 7083, and the terminal region metal layer 7083 is electrically connected to the P-injection region 7132 through a contact hole on the interlayer insulating film 706 of the terminal region 20. The FRD unit of the FRD region includes an anode layer of a second conductivity type disposed on the first surface side compared to the drift region of the first conductivity type, and a cathode layer of the first conductivity type disposed on the second surface side compared to the drift region of the first conductivity type.

[0094] The gate pad 30 is disposed between the active area 10 and the terminal area 20. Furthermore, in some examples, the gate pad 30 is disposed in the transition area 11. The gate pad 30 is configured to have an electrical connection area exposed on the surface, and the electrical connection area can be used to be electrically connected to the lead. The gate pad 30 is used to be electrically connected to the gate bus. In some examples, the gate pad 30 is disposed in the corner area of ​​the enclosed shape, and is protruded toward the side where the active area 10 is located, forming a structure with the active area 10 having a generally rectangular shape in top view, and the rectangle is surrounded by the terminal area 20. The corner area may refer to the corner area of ​​the projection on the surface of the substrate 700, for example, in the embodiment of the present application, it is disposed at the lower right corner of the rectangle. In some embodiments, the gate pad 30 may also be disposed at a suitable position. The gate pad 30 is used to introduce the driving signal of the trench gate 40 to control the conduction or cutoff of the power switching device, and can also serve as a discharge channel of the trench gate 40. The gate pad 30 is a window opened on the passivation layer on the surface of the chip. During packaging, a metal wire is welded on it and connected to the pin to lead out the potential. Setting the gate pad 30 in the corner area not only helps to keep the device layout neat and orderly, improve the aesthetics and maintainability, but also reduce electromagnetic interference with other devices, reduce noise and errors, and make connectors and test equipment more accessible, thereby simplifying the connection and testing process, helping to improve production efficiency and test accuracy, and reducing production costs.

[0095] The two ends of the trench gate 40 in the first direction are connected to the gate bus, and the gate bus is also electrically connected to the gate pad 30, so that the trench gate 40 can obtain a driving signal through the gate bus. The transition region is a portion where the active area 10 and the terminal area 20 are joined to each other. The gate bus is set on the transition region. The driving signal flows from the gate pad 30 and is transmitted to multiple trench gates 40 through the gate bus, or the current output from the gate 40 flows out to the gate pad 30 through the gate bus, so that the trench gate 40 far from the gate pad 30 can also obtain sufficient current, so that the current distribution in the active area 10 is more uniform. The transition region is a particularly important part for ensuring the destruction tolerance under dynamic conditions.

[0096] In some examples, the gate bus includes a first gate bus 50, a second gate bus 51, and at least one gate finger, wherein one end of the first gate bus 50 is connected to the first side of the gate pad 30, for example, the gate pad 30 has a first end adjacent to the active area 10 and a second end opposite to the first end and adjacent to the terminal area 20 on the first side, the first gate bus 50 is connected to the second end of the first side, and a portion of the first gate bus 50 extends along the second direction; one end of the second gate bus 51 is connected to the second side of the gate pad 30, for example, the second side has a first end adjacent to the active area 10 and a second end opposite to the first end and adjacent to the terminal area 20, the first gate bus 50 is connected to the second end of the second side, and a portion of the second gate bus 51 extends along the first direction; one end of at least one gate finger is connected to the first gate bus 50 or the second gate bus 51, and each gate finger is extended along the second direction, for example, extends along the second direction into the active area 10. The gate finger usually leads the trench gate potential to a distance from the gate pad 30 to make the current distribution in the active area more uniform.

[0097] In some examples, such as Figure 1 As shown, the active area 10 has a diagonal line 70, one end of which is close to the gate pad 30, and the first gate bus 50 and the second gate bus 51 are respectively located on both sides of the diagonal line 70, and the first gate bus 50, the second gate bus 51 and the gate pad 30 form an enclosed shape that at least partially surrounds the active area 10. The first gate bus 50 and the second gate bus 51 are arranged on both sides of the diagonal line 70, and the first gate bus 50 and the second gate bus 51 are connected to the gate pad 30, so as to form an enclosed shape that at least partially surrounds the active area 10, so that the current flowing out of the gate pad 30 can flow to the trench gate 40 in the active area 10 through the first gate bus 50 and the second gate bus 51, so that the trench gate 40 far from the gate pad 30 can also obtain the corresponding current, thereby enhancing the uniformity of current distribution.

[0098] The gate bus and the gate pad 30 at least partially surround the active area 10, that is, the gate bus and the gate pad 30 are connected to form an enclosed shape, so that the drive signal can flow from the gate pad and be transmitted to the multiple trench gates 40 through the gate bus, or the output current from the trench gate 40 flows out to the gate pad through the gate bus to realize the opening or closing of the power switching device, and then the partition is performed through the gate finger to prevent the current from being too concentrated in the edge area of ​​the active area, so that the current distribution in the active area is more uniform, thereby improving the uniformity of the heat distribution. The annular structure in the embodiment of the present application can be an annular structure containing an opening. It is worth mentioning that the material of the gate bus and the gate finger can be metal or other suitable conductive material.

[0099] In some embodiments, Figure 1 As shown, the first gate bus 50 includes a first branch line 501 and a second branch line 502, the first end of the first branch line 501 is connected to the first side of the gate pad 30, for example, the gate pad 30 has a first end adjacent to the active area 10 on the first side and a second end opposite to the first end and adjacent to the terminal area 20, the first end of the first branch line 501 is connected to the second end of the first side, and the first branch line 501 extends along the first direction; the first end of the second branch line 502 is connected to the second end of the first branch line 501, and the second branch line 502 extends along the second direction across the plurality of trench gates 40, that is, the second branch line 502 extends toward the side where the active area is located.

[0100] The second gate bus 51 includes: a third branch line 511 and a fourth branch line 512, the first end of the third branch line 511 is connected to the second side of the gate pad 30, for example, the gate pad 30 has a first end adjacent to the active area 10 and a second end opposite to the first end and adjacent to the terminal area 20 on the second side, the first end of the third branch line 511 is connected to the second end of the second side, and the third branch line 511 spans across the plurality of trench gates 40 along the second direction; the first end of the fourth branch line 512 is connected to the second end of the third branch line 511, and the fourth branch line 512 extends along the first direction.

[0101] In this way, the first branch line 501 and the second branch line 502 are distributed on the first side of the gate pad 30, for example, Figure 1 The left side of the gate pad 30 shown in FIG. 1 is close to the active area, the third branch line 511 and the fourth branch line 512 are distributed on the second side of the gate pad 30, that is, close to the active area, and the first side and the second side intersect, for example, Figure 1 As shown in the figure, the first gate bus 50, the second gate bus 51 and the gate pad 30 form a ring structure that partially surrounds the active area 10, and the trench gate 40 is connected between the second branch line 502 and the third branch line 511. At the same time, in order to make the active area 10 in the ring structure larger and the trench gate 40 longer, the connection point between the first branch line 501, the third branch line 511 and the gate pad 30 is set at one end close to the terminal area 20.

[0102] In some embodiments, Figure 1 , Figure 4 As shown, Figure 4The diagram shows that when the top view shape of a power switch device is substantially rectangular, the first branch line 501 is parallel to and opposite to the fourth branch line 512, and the second branch line 502 is parallel to and opposite to the third branch line 511. Since the top view shape of the power switch device is substantially square or rectangular, the first branch line 501 is parallel to the fourth branch line 512, and the second branch line 502 is parallel to the third branch line 511, so that an L-shaped first gate bus 50 and an L-shaped second gate bus 51 can be formed. The trench gate 40 can be regularly connected between the second branch line 502 and the third branch line 511, which is conducive to regular routing during subsequent metal layer layout and wiring. When the size of the power switch device is substantially square, in some embodiments, such as Figure 1 As shown, the lengths of the first branch line 501 and the third branch line 511 are equal, so that the lengths of the current path flowing through the first branch line 501 and the current path flowing through the third branch line 511 can be closer, which helps to achieve better current distribution uniformity and thus make heat distribution more uniform, thereby improving the stability of the device.

[0103] It is worth mentioning that the top view shape of the power switch device is generally a square or a rectangle, and the active area 10, the transition area 11, and the gate bus and the gate pad 30 are generally rectangular in shape, and their respective corners can be right angles or arc angles, which can be reasonably set according to actual needs. Among them, the shape enclosed by the gate bus 50 and the gate pad 30 can be a closed shape or an open shape.

[0104] In some embodiments, Figure 1-Figure 4As shown, the number of gate fingers is two, and the two gate fingers include a first gate finger 601 and a second gate finger 602, wherein one end of the first gate finger 601 is connected to the first branch line 501, and the first gate finger 601 extends into the active area 10, and one end of the second gate finger 602 is connected to the second end of the fourth branch line 512, and the second gate finger 602 extends into the active area 10, and the first gate finger 601 and the second gate finger 602 are arranged at intervals in the second direction. In some embodiments, the first gate finger 601 and the second gate finger 602 are arranged oppositely and at intervals. The active area 10 is divided into more areas by the first gate finger 601 and the second gate finger 602 to prevent the current from being too concentrated, so that the current distribution is more uniform. At least one emitter metal layer (also referred to as an emitter pad or a source pad) is provided in the active area 10, and the emitter metal layer is electrically connected to the emitter layer of the IGBT. Exemplarily, the gate bus and the gate pad may at least partially surround the emitter metal layer, and the emitter metal layer may also be partially provided in the interval between the first gate finger 601 and the second gate finger 602, wherein an insulating layer is provided between the gate bus and the emitter metal layer to electrically isolate the gate bus and the emitter metal layer, and an insulating layer is also provided between the gate pad and the emitter metal layer to electrically isolate the gate pad and the emitter metal layer, and the power switching device can be led out through the emitter metal layer, and the emitter metal layer in the embodiment of the present application may have a smaller resistance to pass a larger conduction current, and have better thermal conductivity. In a specific embodiment, the gate pad 30 is configured to have an electrical connection area exposed on the surface, which can be used to be electrically connected to the lead so as to transmit a driving signal, such as an electrical signal, provided by an external circuit to the gate pad 30 through the lead. The driving signal is transmitted from the lead to the gate pad 30 and then to the gate bus, and then transmitted from the gate bus to each trench gate 40 to provide a trench gate drive to turn on the power switching device. The trench gate drive is a key factor in controlling the conduction and cutoff of the IGBT. The trench gate drive determines the opening or closing of the channel area, thereby controlling the flow of current.

[0105] In some embodiments, Figure 2 , Figure 4As shown, the length of the second branch line 502 in the second direction is set to D, and the lengths of the first gate finger 601 and the second gate finger 602 in the second direction are both 1 / 3D; and\or, in the first direction, the distances between the first gate finger 601 and the second gate finger 602 and the second branch line 502 are both 1 / 2D; for example, the connection line of the first gate finger 601 and the second gate finger 602 is on the same vertical line, and the first gate finger 601 extends from the middle position of the first branch line 501 into the active area, and the second gate finger 602 extends from the middle position of the fourth branch line 512 into the active area, the lengths of the first gate finger 601 and the second gate finger 602 are equal, and the lengths of the first gate finger 601 and the second gate finger 602 are also equal to the interval length between the first gate finger 601 and the second gate finger 602; optionally, the first gate finger 601 and the second gate finger 602 are both located at half of the length of the trench gate. In some examples, in the first direction, the distance between the first gate finger 601 and the second branch 502 is equal to the distance between the first gate finger 601 and the third branch 511, and the distance between the second gate finger 602 and the second branch 502 is equal to the distance between the second gate finger 602 and the third branch 511. In this way, the first gate finger 601 and the second gate finger 602 can evenly partition the active area 10, further helping to improve the problem of excessive current concentration and improve the uniformity of current distribution. In addition, through such a setting, the length difference between the parts of the gate bus that serve as different current paths can be shortened as much as possible, thereby making the current distribution uniformity and heat distribution uniformity in the active area better.

[0106] In some embodiments, Figure 4 As shown, the first gate bus 50, the second gate bus 51 and the gate pad 30 form an enclosed shape, which can be substantially a rectangle. In this case, the length of the second branch line 502 can be D2, and the sum of the length of the first branch line 501 and the length of the gate pad in the first direction can be D1, and the distance between the first gate finger and the second gate finger and the second branch line can be 1 / 2D1. Optionally, D1 and D2 can be different.

[0107] In some embodiments, Figure 3A and Figure 3B As shown, the red arrow in the figure indicates the current path, Figure 3A The first current path P1 is shown, Figure 3B The second current path P2 is shown. The length of the second branch line 502 in the second direction is set to D, the length of the first gate bus is set to L1, the length of the second gate finger 602 in the second direction is set to L2, and the length of the second gate bus is set to L3. Figure 3AThe first current path P1 shown in FIG. 1 is as follows: the current flows from the end of the second branch line 502 away from the first branch line 501, flows through the second branch line 502 and the first branch line 501 to the gate pad 30, and the distance of the first current path P1 is L1; Figure 3B The second current path P2 shown in FIG. 1 is as follows: the current flows from the end of the second gate finger close to the central region, flows through the second gate finger 602, the fourth branch line 512, and the third branch line 511, and the distance of the second current path P2 = L2 + L3. In a specific embodiment, according to Figure 2 As shown in the length marking, the distance of the first current path P1 = D + 1 / 2D + d2 = 1.5D + d2, the distance of the second current path P2 = 1 / 3D + 1 / 2D + 1 / 2D + d2 = 1.33D + d2, the first current path P1 and the second current path P2 are regarded as the long current paths in the current path where the current flows from the gate bus to the gate pad 30, the distance difference between the two long current paths is equal to 0.17D, the smaller the distance difference is, the more uniform the current distribution is, thus setting |L1-(L2+L3)|≤0.2D can make the current distribution more uniform, or further setting |L1-(L2+L3)|≤0.17D, by making the distance difference between the two smaller, the current distribution can be made more uniform.

[0108] In some embodiments, Figure 3C and Figure 3D As shown, the red arrow in the figure indicates the current path, where Figure 3C A first current path P3 is shown, Figure 3D The second current path P4 is shown. The length of the second branch line 502 in the second direction is set to D, the length of the third branch line 511 is set to L4, the length of the first gate finger 601 in the second direction is set to L5, and the length of the first gate bus 50 between the first gate finger 601 and the gate pad is set to L6. Figure 3C The third current path P3 shown in FIG. 1 is as follows: the current flows from one end of the first gate finger 601 close to the central region, flows through the first gate finger 601 and the first branch line 501 between the first gate finger 601 and the gate pad, and the distance of the third current path P3 is L5+L6; Figure 3D The fourth current path P4 shown in FIG. 1 is as follows: the current flows from the end of the third branch line 511 away from the gate pad 30, flows through the third branch line 511 and flows to the gate pad 30, and the distance of the fourth current path P4 is L4. In a specific embodiment, according to Figure 2As shown in the length marking, the distance of the third current path P3 = 1 / 3D + d2 = 0.33 + d2, the distance of the fourth current path P4 = 1 / 2D + 1 / 2D + d2 = D + d2, the third current path P3 and the fourth current path P4 are regarded as short current paths in the current path of the current flowing from the gate bus to the gate pad 30, and the distance difference between the two short current paths is also equal to 0.17D. Similarly, in this application, |L4-(L5+L6)|≤0.2D is set, or, further, |L4-(L5+L6)|≤0.17D is set to make the current distribution more uniform, thereby making the heat distribution more uniform. At the same time, the setting of the gate finger position and length in this application can make the distance difference of the long current path equal to the distance difference of the short current path, further making the current distribution more uniform, and more conducive to heat distribution and reliability of power switching devices.

[0109] In some embodiments, Figure 1 As shown, the sum of the length of the first branch line 501 in the first direction and the length of the gate pad 30 in the first direction is equal to the length of the second branch line 502 in the second direction. Similarly, the sum of the length of the third branch line 511 in the second direction and the length of the gate pad 30 in the second direction is equal to the length of the second branch line 502 in the second direction, thereby forming a structure with three equal sides, so that the trench gate between the second branch line 502 and the third branch line 511 is more evenly powered.

[0110] In some embodiments, Figure 1As shown, the gate bus further includes: a third gate bus 52 and a fourth gate bus 53, the third gate bus 52 connects one end of the first gate bus 50 away from the gate pad 30, the fourth gate bus 53 connects one end of the second gate bus 51 away from the gate pad 30, and the third gate bus 52 and the fourth gate bus 53 are arranged at intervals. For example, the first end of the third gate bus 52 connects the second end of the second branch line 502, and the third gate bus 52 extends along the first direction toward the side of the fourth branch line 512; the first end of the fourth gate bus 53 connects the second end of the fourth branch line 512, and the fourth gate bus 53 extends along the first direction toward the third gate bus 52, wherein the third gate bus 52 and the fourth gate bus 53 are arranged at intervals in the first direction, for example, the third gate bus 52 and the fourth gate bus 53 are opposite and arranged at intervals. By setting the third gate bus 52 and the fourth gate bus 53, the contact area with the gate polysilicon layer below can be increased, the contact resistance can be reduced, and the signal transmission speed can be improved. It is also helpful to disperse the current, reduce the formation of hot spots, improve thermal stability, and help maintain the normal operation of the device at high temperatures. Therefore, by setting the third gate bus 52 and the fourth gate bus 53, the stability of the device can be effectively improved. In addition, the third gate bus 52 and the fourth gate bus 53 spaced apart in the first direction are respectively connected to the second branch line 502 and the fourth branch line 512, so as to form a ring structure with a small opening, which can not only more effectively distribute the current of the trench gate 40, ensure the uniform distribution of the current of the trench gate 40 in the active area 10, simplify the wiring complexity of the gate bus and the gate pad 30, but also ensure the connection between the active area 10 and the transition area 11 through the opening (for example, the emitter metal layer outside the gate bus is electrically connected to the emitter metal layer of the active area). Optionally, the third gate bus line 52 and the fourth gate bus line 53 are arranged at intervals in the first direction, or the third gate bus line 52 and the fourth gate bus line 53 are arranged at intervals in the second direction.

[0111] In some examples, the lengths of the third gate bus 52 and the fourth gate bus 53 are equal. This arrangement can make the shape and structure of the gate bus more regular, simplify the complexity of the gate bus wiring, enable the gate bus to transmit current more smoothly, reduce current congestion and loss, and improve the overall performance of the device. In some embodiments, the method of manufacturing the power switching device of the present application, such as IGBT, may include the following steps:

[0112] Step S1, such as Figure 5AAs shown, a substrate 700 is provided. The substrate 700 has a first surface 7001 and a second surface 7002 opposite to each other. A drift region of a first conductivity type is formed between the first surface 7001 and the second surface 7002 .

[0113] Step S2, such as Figure 5B As shown, a gate trench 701 is formed by etching from the first surface 7001 of the substrate 700 into the substrate 700, and then a gate trench insulating film 702 is formed on the inner wall and bottom of the gate trench 701 and the first surface 7001 of the substrate 700; wherein the material of the gate trench insulating film 702 may include silicon oxide or other suitable insulating materials.

[0114] Step S3, depositing a gate trench electrode to fill the gate trench. Figure 5C As shown, a gate trench electrode 703 is formed by deposition, the gate trench electrode 703 covers the substrate 700 and fills the gate trench 701 to form a trench gate 40, and the material of the gate trench electrode 703 may include but is not limited to polysilicon, and then as shown in FIG. Figure 5D As shown, the gate trench electrode 703 is etched so that the gate trench electrode on the first surface of the substrate is removed.

[0115] Step S4, such as Figure 5E As shown, a second conductive type body layer 704 is formed in the substrate 700, wherein the body layer 704 is located on a side of the drift region away from the second surface 7002 and on both sides of the trench gate 40. Figure 5E As shown, an emitter layer 705 of a first conductivity type is formed in the substrate 700, and the emitter layer 705 is located on a side of the body layer 704 away from the second surface 7002, and the surface of the emitter layer 705 away from the body layer 704 constitutes part of the first surface 7001. Exemplarily, the body layer and the emitter layer are formed by ion implantation. Optionally, the emitter layer 705 is, for example, an N+ emitter layer, that is, an N-type heavily doped emitter layer.

[0116] Step S5, such as Fig. 5F As shown, an interlayer insulating film 706 having a contact hole 707 is formed on the first surface 7001 of the substrate 700, wherein the contact hole 707 exposes at least a portion of the emitter layer 705, so that the emitter metal layer formed in the subsequent step can be connected to the emitter layer 705. Then, dopants are implanted into the contact hole 707 corresponding to the body layer 704 to form a P+ region (not shown), and the P+ region serves as a lead-out region of the body layer 704.

[0117] Step S6, as Figure 5GAs shown, an emitter metal layer 7081 is formed on the interlayer insulating film 706 and the contact hole 707. Then, a buffer layer 709 and a collector layer 710 are sequentially formed on the side of the drift region away from the first surface 7001. Specifically, the second surface 7002 of the substrate 700 is thinned, and then a buffer layer 709 is formed within the second surface 7002 of the substrate 700, and then a collector layer 710 is formed on the side of the buffer layer 709 away from the first surface 7001. At least part of the surface of the collector layer 710 constitutes the second surface 7002, and a collector metal layer 711 is also formed on the side of the collector layer 710 away from the first surface, which contacts the collector layer 710 to form a conductive contact.

[0118] It is worth mentioning that the above steps are only examples, which only include relevant steps for preparing a partial structure of the active area. The preparation of a complete power switch device may also include other steps, which will not be repeated here.

[0119] According to the power switching device provided by the present application, a gate bus and a gate pad connected to each other are arranged between the active area and the terminal area, so that a driving signal flows from the gate pad and is transmitted to each trench gate through the gate bus, or the output current from the trench gate flows out to the gate pad through the gate bus, so as to realize turning on or off the power switching device, and then partitioning is performed through gate fingers to prevent the current from being too concentrated in the edge area of ​​the active area, so that the current distribution in the active area is more uniform, thereby improving the uniformity of heat distribution.

[0120] On the other hand, the present application Figure 7 As shown, an electronic device 800 is provided, and the electronic device 800 includes the power switch device as described above. The electronic device can be any electronic product or device such as a household appliance (such as a variable frequency air conditioner), a television, a mobile phone, a tablet computer, a laptop computer, a netbook, a game console, a television, a VCD, a DVD, a navigator, a camera, a video camera, a voice recorder, an MP3, an MP4, a PSP, etc. Since the electronic device of the present application has the aforementioned power switch device, it has similar advantages to the aforementioned power switch device.

[0121] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely exemplary and are not intended to limit the scope of the present application to this. Those of ordinary skill in the art may make various changes and modifications therein without departing from the scope and spirit of the present application. All these changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0122] In the description provided herein, a large number of specific details are described. However, it is understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0123] Similarly, it should be understood that in order to streamline the present application and help understand one or more of the various inventive aspects, in the description of the exemplary embodiments of the present application, the various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. However, the method of the present application should not be interpreted as reflecting the following intention: the claimed application requires more features than the features clearly stated in each claim. More specifically, as reflected in the corresponding claims, the inventive point is that the corresponding technical problem can be solved with features less than all the features of a single disclosed embodiment. Therefore, the claims following the specific embodiment are hereby explicitly incorporated into the specific embodiment, wherein each claim itself serves as a separate embodiment of the present application.

[0124] It will be understood by those skilled in the art that, except for mutually exclusive features, all features disclosed in this specification (including the accompanying claims, abstracts and drawings) and all processes or units of any method or device disclosed in this specification may be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstracts and drawings) may be replaced by an alternative feature that provides the same, equivalent or similar purpose.

[0125] In addition, those skilled in the art will appreciate that, although some embodiments herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present application and form different embodiments. For example, in the claims, any one of the claimed embodiments may be used in any combination.

[0126] It should be noted that the above-mentioned embodiments illustrate rather than limit the invention and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims.

Claims

1. A power switching device, characterized in that: include: Active area; A terminal region, arranged at the periphery of the active region; A plurality of trench gates are arranged in the active area, the plurality of trench gates are extended along a first direction and are spaced apart along a second direction, and the first direction intersects the second direction; a gate bus disposed at least partially between the active region and the terminal region; A gate pad is disposed between the terminal area and the active area, and the gate pad is configured to have an electrical connection area exposed on the surface, for being electrically connected to the gate bus; wherein the gate bus comprises: A first gate bus connected to a first side of the gate pad, and a portion of the first gate bus extending along the second direction; A second gate bus connected to a second side of the gate pad, and a portion of the second gate bus extends along the second direction, wherein the first side intersects the second side; At least one gate finger, each of the gate fingers is extended along the second direction and one end of each gate finger is connected to the first gate bus or the second gate bus; wherein, The gate bus and the gate pad form an enclosed shape to at least partially surround the active area.

2. The power switch device according to claim 1, characterized in that: The active area has a diagonal line, one end of which is close to the gate pad, the first gate bus and the second gate bus are respectively located on both sides of the diagonal line, and the first gate bus, the second gate bus and the gate pad form an enclosed shape that at least partially surrounds the active area.

3. The power switch device according to claim 1 or 2, characterized in that: The gate pad is arranged at the corner area of ​​the enclosed shape and is protruded toward the side where the active area is located.

4. The power switch device according to claim 1, characterized in that: The first gate bus comprises: a first branch line, wherein a first end of the first branch line is connected to the first side of the gate pad, and the first branch line extends along the first direction; A second branch line, wherein a first end of the second branch line is connected to a second end of the first branch line, and the second branch line extends along the second direction and crosses over a plurality of the trench gates.

5. The power switch device according to claim 4, characterized in that: The second gate bus comprises: a third branch line, a first end of the third branch line connected to the second side of the gate pad, the third branch line extending along the second direction and crossing the plurality of trench gates; A fourth branch line, a first end of the fourth branch line is connected to the second end of the third branch line, and the fourth branch line extends along the first direction.

6. The power switch device according to claim 5, characterized in that: The gate finger includes a first gate finger and a second gate finger, wherein one end of the first gate finger is connected to the first branch line, and the first gate finger extends into the active area, one end of the second gate finger is connected to the second end of the fourth branch line, and the second gate finger extends into the active area, and the first gate finger and the second gate finger are spaced apart in the second direction.

7. The power switch device according to claim 6, characterized in that: The first gate fingers and the second gate fingers are opposite to each other and spaced apart.

8. The power switch device according to claim 6, characterized in that: Set the length of the second branch line in the second direction to D, set the length of the first gate bus to L1, set the length of the second gate finger in the second direction to L2, set the length of the second gate bus to L3, then |L1-(L2+L3)|≤0.2D.

9. The power switch device according to claim 6, characterized in that: Set the length of the second branch line in the second direction to D, set the length of the third branch line to L4, set the length of the first gate finger in the second direction to L5, set the length of the first gate bus between the first gate finger and the gate pad to L6, then |L4-(L5+L6)|≤0.2D.

10. The power switch device according to claim 6, characterized in that: The length of the second branch line in the second direction is set to D, and the lengths of the first gate finger and the second gate finger in the second direction are both 1 / 3D; and / or In the first direction, the distances between the first gate finger and the second gate finger and the second branch line are both 1 / 2D; and / or In the first direction, the distance between the first gate finger and the second branch line is equal to the distance between the first gate finger and the third branch line, and the distance between the second gate finger and the second branch line is equal to the distance between the second gate finger and the third branch line.

11. The power switch device according to claim 6, characterized in that: A sum of a length of the first branch line in the first direction and a length of the gate pad in the first direction is equal to a length of the second branch line in the second direction.

12. The power switch device according to claim 5, characterized in that: The first branch line is parallel to and opposite to the fourth branch line, and the second branch line is parallel to and opposite to the third branch line.

13. The power switch device according to claim 5, characterized in that: The first branch line and the third branch line have the same length.

14. The power switch device according to claim 5, characterized in that: The gate bus further comprises: a third gate bus, a first end of the third gate bus connected to the second end of the second branch line, and the third gate bus extending along the first direction toward one side of the fourth branch line; a fourth gate bus, wherein a first end of the fourth gate bus is connected to a second end of the fourth branch line, and the fourth gate bus extends along the first direction toward the third gate bus, wherein: The third gate bus line and the fourth gate bus line are spaced apart from each other in the first direction.

15. The power switch device according to claim 14, characterized in that: The third gate bus line and the fourth gate bus line are arranged opposite to each other and spaced apart; and / or, The third gate bus line and the fourth gate bus line have the same length.

16. The power switch device according to any one of claims 1 to 15, characterized in that: The first direction is perpendicular to the second direction.

17. The power switching device according to any one of claims 1 to 15, characterized in that: The power switch device includes an IGBT or an RC-IGBT.

18. An electronic device, characterized in that: The invention comprises a power switching device as claimed in any one of claims 1 to 17.

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