Manufacturing method of light-emitting device, light-emitting device and display device

Abstract

The invention discloses a manufacturing method of a light-emitting device, the light-emitting device and a display device. The manufacturing method provided by the invention comprises the following steps: providing a conductive substrate, wherein the conductive substrate comprises a bearing substrate and a conductive layer which are stacked in sequence; etching the conductive layer for the first time, and removing part of the conductive layer, so that the rest part of the conductive layer forms an electrode which is convexly arranged on the bearing substrate; etching the electrode for the second time to form a first groove section and a second groove section which are communicated with each other on the electrode, the first groove section being closer to the bearing substrate than the second groove section, and the opening area of one side of the first groove section away from the bearing substrate being larger than the opening area of one side of the second groove section close to the bearing substrate; forming a conducting medium layer on the electrode so that the conducting medium layer at least fills the first groove section and the second groove section; and arranging a light-emitting layer on one side, deviating from the bearing substrate, of the conductive medium layer, so that the light-emitting layer is conductively connected with the electrode through the conductive medium layer. Therefore, the risk of poor contact between the light-emitting layer and the electrode is reduced.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a method for manufacturing a light-emitting device, a light-emitting device and a display device. Background Art

[0002] In the display array substrate manufacturing process and other processes, the scraps of the glass substrate can be utilized to prepare the circuit substrate of the light bar, thereby improving the utilization rate of the glass substrate. The existing light bar glass substrate and the lamp beads are usually electrically connected through a glass-based pad and a conductive solder paste.

[0003] However, the existing glass-based solder pads have a poor tin absorption rate, and the hollowing rate and bubble rate of the solder paste are high, which leads to an unstable connection between the glass substrate and the lamp beads and a greater risk of poor contact of the lamp beads. Summary of the invention

[0004] The main purpose of the present application is to provide a method for manufacturing a light-emitting device, a light-emitting device and a display device, aiming to solve the above-mentioned technical problems existing in the prior art.

[0005] To solve the above problems, the present application provides a method for manufacturing a light-emitting device, the manufacturing method comprising: providing a conductive substrate, the conductive substrate comprising a carrier substrate and a conductive layer stacked in sequence; performing a first etching on the conductive layer to remove part of the conductive layer and expose the carrier substrate, so that the remaining part of the conductive layer forms an electrode protruding from the carrier substrate; performing a second etching on the electrode to form a first groove section and a second groove section that are interconnected on the electrode, the first groove section being closer to the carrier substrate than the second groove section, and an opening area of ​​the first groove section on a side away from the carrier substrate being larger than an opening area of ​​the second groove section on a side close to the carrier substrate; forming a conductive medium layer on the electrode, so that the conductive medium layer at least fills the first groove section and the second groove section; and arranging a light-emitting layer on a side of the conductive medium layer away from the carrier substrate, so that the light-emitting layer is conductively connected to the electrode through the conductive medium layer.

[0006] In some embodiments, the conductive layer includes a first conductive layer and a second conductive layer, the first conductive layer is closer to the carrier substrate than the second conductive layer, the first conductive layer is used to form a first slot segment, and the second conductive layer forms a second slot segment.

[0007] In some embodiments, the step of performing a first etching on the conductive layer to remove a portion of the conductive layer and expose the carrier substrate so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate includes: setting a first resist on the side of the second conductive layer away from the first conductive layer; patterning the first resist to form first openings set at intervals, and a portion of the second conductive layer is exposed through the first openings; removing the second conductive layer exposed through the first openings and the first conductive layer corresponding to the first openings, so that the remaining portion of the first conductive layer and the remaining portion of the second conductive layer form an electrode; and removing the first resist.

[0008] In some embodiments, the electrode is etched a second time to form a first groove segment and a second groove segment that are interconnected on the conductive layer, the first groove segment is closer to the carrier substrate than the second groove segment, and the opening area of ​​the first groove segment on the side away from the carrier substrate is larger than the opening area of ​​the second groove segment on the side close to the carrier substrate. The steps include: setting a second resist on the side of the second conductive layer away from the first conductive layer; patterning the second resist to form second openings set at intervals, and part of the second conductive layer is exposed through the second openings; removing the second conductive layer exposed through the second openings and part of the first conductive layer corresponding to the second openings to form a first groove segment and a second groove segment; removing the second resist.

[0009] In some embodiments, the step of removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening so that the remaining parts of the first conductive layer and the second conductive layer form an electrode includes: removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening by means of an etching liquid; the step of removing the second conductive layer exposed through the second opening and part of the first conductive layer corresponding to the second opening to form a first groove section and a second groove section includes: removing the second conductive layer exposed through the second opening and part of the first conductive layer corresponding to the second opening by means of an etching liquid; wherein the reaction rate of the first conductive layer with the etching liquid is greater than the reaction rate of the second conductive layer with the etching liquid.

[0010] In some embodiments, before forming a conductive medium layer on the electrode so that the conductive medium layer at least fills the first slot segment and the second slot segment, the manufacturing method also includes: forming an insulating layer on the supporting substrate; removing a portion of the insulating layer corresponding to the electrode to expose the electrode.

[0011] In some embodiments, after the step of removing part of the insulating layer corresponding to the electrode to expose the electrode, the manufacturing method further includes: coating a reflective layer on the side of the insulating layer and the electrode facing away from the supporting substrate; and removing part of the reflective layer corresponding to the electrode to expose the electrode.

[0012] In some embodiments, after the step of providing a light-emitting layer on a side of the conductive medium layer facing away from the carrier substrate, the manufacturing method further includes: forming a transparent protective glue on a side of the light-emitting layer facing away from the conductive medium layer.

[0013] In order to solve the above problems, the present application provides a light-emitting device, which is prepared by the above-mentioned method for manufacturing a light-emitting device.

[0014] In order to solve the above problems, the present application provides a display device, which includes the above light-emitting device.

[0015] The beneficial effects of the present invention are as follows: Different from the prior art, the present application provides a method for manufacturing a light-emitting device, the manufacturing method comprising: providing a conductive substrate, the conductive substrate comprising a carrier substrate and a conductive layer stacked in sequence; performing a first etching on the conductive layer to remove part of the conductive layer and expose the carrier substrate, so that the remaining part of the conductive layer forms an electrode protruding from the carrier substrate; performing a second etching on the electrode to form a first groove section and a second groove section that are interconnected on the electrode, the first groove section being closer to the carrier substrate than the second groove section, and the opening area of ​​the first groove section on the side away from the carrier substrate being larger than the opening area of ​​the second groove section on the side close to the carrier substrate; forming a conductive medium layer on the electrode, so that the conductive medium layer at least fills the first groove section and the second groove section; and arranging a light-emitting layer on the side of the conductive medium layer away from the carrier substrate, so that the light-emitting layer is conductively connected to the electrode through the conductive medium layer. Through the above implementation, the first etching and the second etching form an electrode, a first groove section and a second groove section. The conductive medium layer is filled in the first groove section and the second groove section, thereby increasing the contact area between the conductive medium layer and the electrode. The opening area of ​​the first groove section away from the supporting substrate is larger than the opening area of ​​the second groove section close to the supporting substrate, which facilitates the conductive medium layer to be better embedded in the second groove section, thereby making the connection between the conductive medium layer and the electrode tighter and reducing the risk of poor contact between the light-emitting layer and the electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 is a schematic structural diagram of a display device according to one or more embodiments of the present application;

[0018] Figure 2 is a first structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0019] Figure 3 is a first schematic diagram of a method for manufacturing a light emitting device according to one or more embodiments of the present application;

[0020] Figure 4 is a second structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0021] Figure 5 is a second schematic flow chart of a method for manufacturing a light emitting device according to one or more embodiments of the present application;

[0022] Figure 6is a third structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0023] Figure 7 is a fourth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0024] Figure 8 is a fifth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0025] Fig. 9 is a sixth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0026] Fig.10 is a seventh structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0027] Fig.11 is a third flow chart of a method for manufacturing a light emitting device according to one or more embodiments of the present application;

[0028] Fig.12 is an eighth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0029] Fig.13 is a ninth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0030] Fig.14 is a tenth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0031] Fig.15 is an eleventh structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0032] Fig.16 is a twelfth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0033] Fig.17 is a fourth process diagram of a method for manufacturing a light emitting device according to one or more embodiments of the present application;

[0034] Fig.18 is a thirteenth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0035] Fig.19 is a fourteenth structural schematic diagram of a light emitting device according to one or more embodiments of the present application;

[0036] Fig. 20 is a fifth flow chart of a method for manufacturing a light emitting device according to one or more embodiments of the present application;

[0037] Fig.21 is a fifteenth structural schematic diagram of a light-emitting device according to one or more embodiments of the present application.

[0038] Reference numerals: display device 1; light-emitting device 2; conductive substrate 10; carrier substrate 11; glass substrate 111; buffer layer 112; conductive layer 12; first conductive layer 121; second conductive layer 122; electrode 13; first groove section 131; second groove section 132; conductive medium layer 20; light-emitting layer 30; first resist 40; first opening 41; second resist 50; second opening 51; insulating layer 60; reflective layer 70; transparent protective glue 80; photomask 90. DETAILED DESCRIPTION

[0039] The following embodiments of the technical solution of the present application are described in detail in conjunction with the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present application, and are therefore only used as examples, and cannot be used to limit the scope of protection of the present application.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0041] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0042] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0043] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0044] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0045] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the embodiments of the present application.

[0046] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0047] In the display array substrate manufacturing process and other processes, the scraps of the glass substrate can be utilized to prepare the circuit substrate of the light bar, thereby improving the utilization rate of the glass substrate. The existing light bar glass substrate and the lamp beads are usually electrically connected through a glass-based pad and a conductive solder paste.

[0048] However, the tin absorption rate of the glass-based solder pad is poor, and the hollowing rate and bubble rate of the solder paste are high, which leads to an unstable connection between the glass substrate and the lamp beads, and a greater risk of poor contact of the lamp beads.

[0049] Therefore, the present application provides a method for manufacturing a light-emitting device to solve the above problems.

[0050] Please refer to Figure 1 , Figure 1 is a schematic diagram of the structure of a display device according to one or more embodiments of the present application.

[0051] The present application provides a display device, which may include but is not limited to mobile phones, tablets, laptops, desktops, terminals, interactive displays, digital audio and video devices, Internet of Things devices, etc. Among them, interactive displays may include interactive whiteboards, digital advertising interactive screens, and game interactive displays, etc., and Internet of Things devices may include smart home devices and smart wearable devices, etc. Among them, the display device may include a light-emitting device, which may provide a light source for the display device.

[0052] Please refer to Figure 2-Figure 3 , Figure 2 is a first structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Figure 3 is a first schematic diagram of a method for manufacturing a light emitting device according to one or more embodiments of the present application; Figure 4 is a second structural schematic diagram of a light-emitting device according to one or more embodiments of the present application.

[0053] To solve the above problems, the present application provides a light-emitting device 2, which can be installed on a display device 1 and provide a light source for the display device 1. The light-emitting device 2 is prepared by the above-mentioned light-emitting device manufacturing method.

[0054] To solve the above problems, the manufacturing method of the light emitting device provided in the present application comprises the following steps:

[0055] Step S11: providing a conductive substrate, wherein the conductive substrate comprises a carrier substrate and a conductive layer which are stacked in sequence.

[0056] The carrier substrate 11 can provide support and fixation for the conductive layer 12, and the carrier substrate 11 may include a glass substrate 111. The conductive layer 12 is conductive, and the material of the conductive layer 12 may include but is not limited to one or more of copper, molybdenum and other metal materials. In some application scenarios, the carrier substrate 11 also includes a buffer layer 112, and the buffer layer 112 is arranged on the glass substrate 111. The conductive layer 12 is located on the side of the buffer layer 112 away from the glass substrate 111. The material of the buffer layer 112 may include but is not limited to silicon dioxide, so as to improve the adhesion between the carrier substrate 11 and the conductive layer 12 and reduce the risk of the conductive layer 12 peeling off from the carrier substrate 11.

[0057] Step S12: performing a first etching on the conductive layer to remove a portion of the conductive layer and expose the carrier substrate, so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate.

[0058] The conductive layer 12 is first etched by dry etching or wet etching to remove part of the conductive layer 12. It should be noted that after part of the conductive layer 12 is removed, the carrier substrate 11 corresponding to the removed part of the conductive layer 12 is exposed on the side facing the conductive layer 12. The conductive layer 12 retained on the carrier substrate 11 forms an electrode 13 protruding from the carrier substrate 11. In some application scenarios, the number of electrodes 13 formed by the conductive layer 12 can be two, and the two electrodes 13 are arranged at intervals in the extension direction of the carrier substrate 11, and the two electrodes 13 can correspond to the positive electrode and the negative electrode of the light-emitting layer 30 respectively.

[0059] Step S13: etching the electrode for a second time to form a first groove section and a second groove section that are interconnected on the electrode, wherein the first groove section is closer to the supporting substrate than the second groove section, and an opening area of ​​the first groove section away from the supporting substrate is larger than an opening area of ​​the second groove section close to the supporting substrate.

[0060] The electrode 13 is etched for the second time by dry etching or wet etching to form a first groove section 131 and a second groove section 132 that are interconnected on the electrode 13. The first groove section 131 and the second groove section 132 may be arranged in a direction perpendicular to the carrier substrate 11. The first groove section 131 is closer to the carrier substrate 11 than the second groove section 132. The opening area of ​​the first groove section 131 away from the carrier substrate 11 is larger than the opening area of ​​the second groove section 132 close to the carrier substrate 11. In some application scenarios, the opening area of ​​the first groove section 131 away from the carrier substrate 11 is larger than the area of ​​the bottom wall of the first groove section 131 close to the carrier substrate 11, and the opening area of ​​the second groove section 132 away from the carrier substrate 11 is larger than the opening area of ​​the second groove section 132 close to the carrier substrate 11.

[0061] Step S14: forming a conductive medium layer on the electrode, so that the conductive medium layer at least fills the first slot section and the second slot section.

[0062] The conductive medium layer 20 has good conductivity and fluidity. The conductive medium layer 20 may include, but is not limited to, solder paste and conductive adhesive. For example, the conductive medium layer 20 is solder paste. The solder paste is filled in the first slot section 131 and the second slot section 132 in the form of a fluid. After solidification, the solder paste is embedded in the first slot section and the second slot section 132. The conductive medium layer 20 is filled in at least the first slot section 131 and the second slot section 132, which increases the contact area between the conductive medium layer 20 and the electrode 13, improves the tightness of the connection between the conductive medium layer 20 and the electrode 13, and thus improves the conductive effect between the conductive medium layer 20 and the electrode 13. Since the first slot section 131 is closer to the carrier substrate 11 than the second slot section 132, the opening area of ​​the first slot section 131 away from the carrier substrate 11 is larger than the opening area of ​​the second slot section 132 close to the carrier substrate 11, which further enables the conductive medium layer 20 to be embedded in the first slot section 131 and the second slot section 132, thereby improving the connection effect between the conductive medium layer 20 and the electrode 13. It should be noted that the conductive medium layer 20 may also cover the side of the electrode 13 away from the supporting substrate 11 .

[0063] Step S15: a light-emitting layer is disposed on a side of the conductive medium layer away from the carrier substrate, so that the light-emitting layer is conductively connected to the electrode through the conductive medium layer.

[0064] The light-emitting layer 30 can be used to emit a light beam. The light-emitting layer 30 can include but is not limited to LED lamp beads, etc. The light-emitting layer 30 is arranged on the side of the conductive medium layer 20 away from the supporting substrate 11, so that the light-emitting layer 30 can be connected to the electrode 13 through the conductive medium layer 20, and then the light-emitting layer 30 is lit. Through the first groove section 131 and the second groove section 132, the electrical connection between the conductive medium layer 20 and the electrode 13 is better, reducing the risk of poor contact between the light-emitting layer 30 and the electrode 13.

[0065] Through the above-mentioned embodiment, the first etching and the second etching form the electrode 13, the first groove section 131 and the second groove section 132. The conductive medium layer 20 is filled in the first groove section 131 and the second groove section 132, thereby increasing the contact area between the conductive medium layer 20 and the electrode 13. The opening area of ​​the first groove section 131 away from the side of the supporting substrate 11 is larger than the opening area of ​​the second groove section 132 close to the side of the supporting substrate 11, which facilitates the conductive medium layer 20 to be better embedded in the second groove section 132, thereby making the connection between the conductive medium layer 20 and the electrode 13 tighter, and reducing the risk of poor contact between the light-emitting layer 30 and the electrode 13.

[0066] In some embodiments, the conductive layer 12 includes a first conductive layer 121 and a second conductive layer 122. The first conductive layer 121 is closer to the carrier substrate 11 than the second conductive layer 122. The first conductive layer 121 is used to form a first slot segment 131, and the second conductive layer 122 forms a second slot segment 132. The first conductive layer 121 and the second conductive layer 122 can be deposited on the carrier substrate 11 by sputtering technology. The materials of the first conductive layer 121 and the second conductive layer 122 can be different. For example, the material of the first conductive layer 121 can be copper, and the material of the second conductive layer 122 can be molybdenum. It should be noted that the materials of the first conductive layer 121 and the second conductive layer 122 are different, which facilitates the formation of the first slot segment 131 and the second slot segment 132 with different opening areas.

[0067] Please refer to Figure 5-Figure 10 , Figure 5 is a second schematic flow chart of a method for manufacturing a light emitting device according to one or more embodiments of the present application; Figure 6 is a third structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Figure 7 is a fourth structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Figure 8 is a fifth structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Fig. 9 is a sixth structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Fig.10 is a seventh structural schematic diagram of a light-emitting device according to one or more embodiments of the present application.

[0068] In some embodiments, step S12 includes: step S121: disposing a first resist 40 on a side of the second conductive layer 122 away from the first conductive layer 121. Step S122: patterning the first resist 40 to form first openings 41 arranged at intervals, and a portion of the second conductive layer 122 is exposed through the first openings 41. Step S123: removing the second conductive layer 122 exposed through the first openings 41 and the first conductive layer 121 corresponding to the first openings 41, so that the remaining portion of the first conductive layer 121 and the remaining portion of the second conductive layer 122 form the electrode 13. Step S124: removing the first resist 40.

[0069] Specifically, the first resist 40 can be a positive resist or a negative resist. The first resist 40 is disposed on the side of the second conductive layer 122 away from the first conductive layer 121, and the photoresist is exposed through the photomask 90. ​​When the first resist 40 is a negative resist, the portion exposed to light will be dissolved in the developer, and the portion not exposed to light will not be dissolved in the developer. After the developer is dripped onto the first resist 40, the portion of the first resist 40 exposed to light is dissolved by the developer, thereby forming a first opening 41 on the first resist 40 to expose the second conductive layer 122. The second conductive layer 122 exposed through the first opening 41 and the first conductive layer 121 corresponding to the first opening 41 are etched, thereby exposing the carrier substrate 11 corresponding to the first opening 41, and the remaining portion of the first conductive layer 121 and the second conductive layer 122 that are not etched form the electrode 13. Specifically, the first resist 40 can be removed by dripping the photoresist.

[0070] Please refer to Figure 11-Figure 16 , Fig.11 is a third schematic flow chart of a method for manufacturing a light emitting device according to one or more embodiments of the present application; Fig.12 is an eighth structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Fig.13 is a ninth structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Fig.14 is a tenth structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Fig.15 is an eleventh structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Fig.16 is a twelfth structural schematic diagram of a light emitting device according to one or more embodiments of the present application.

[0071] In some embodiments, step S13 includes: step S131: disposing a second resist 50 on a side of the second conductive layer 122 away from the first conductive layer 121. step S132: patterning the second resist 50 to form second openings 51 arranged at intervals, and a portion of the second conductive layer 122 is exposed through the second openings 51. step S133: removing the second conductive layer 122 exposed through the second openings 51 and a portion of the first conductive layer 121 corresponding to the second openings 51 to form a first slot segment 131 and a second slot segment 132. step S134: removing the second resist 50.

[0072] Specifically, the second resist 50 can be a positive resist or a negative resist. The second resist 50 is disposed on the side of the second conductive layer 122 away from the first conductive layer 121, and the photoresist is exposed through the photomask 90. ​​When the second resist 50 is a negative resist, the portion exposed to light will be dissolved in the developer, and the portion not exposed to light will not be dissolved in the developer. After the developer is dripped onto the second resist 50, the portion of the second resist 50 exposed to light is dissolved by the developer, thereby forming a second opening 51 on the second resist 50 to expose the second conductive layer 122. The second conductive layer 122 exposed through the second opening 51 and the portion of the first conductive layer 121 corresponding to the second opening 51 are etched, thereby forming a first groove section 131 and a second groove section 132. It should be noted that the depth of the second groove section 132 may correspond to the thickness of the second conductive layer 122, and the depth of the first groove section 131 is less than the thickness of the first conductive layer 121. In some application scenarios, the etching solution used in the first etching is the same as the etching solution used in the second etching, and the etching time of the second etching is shorter than that of the first etching, that is, the time for the conductive layer 12 to react with the etching solution in the second etching is shorter than that in the first etching, thereby alleviating the risk that the first conductive layer 121 corresponding to the second opening 51 is completely etched due to the long reaction time of the second etching, thereby causing the electrode 13 to be disconnected. Specifically, the second resist 50 can be removed by dripping the photoresist solution.

[0073] In some embodiments, step S123 further includes: removing the second conductive layer 122 exposed through the first opening 41 and the first conductive layer 121 corresponding to the first opening 41 by means of an etching liquid. Step S133 further includes: removing the second conductive layer 122 exposed through the second opening 51 and a portion of the first conductive layer 121 corresponding to the second opening 51 by means of an etching liquid. The reaction rate of the first conductive layer 121 with the etching liquid is greater than the reaction rate of the second conductive layer 122 with the etching liquid.

[0074] The etching liquid can react chemically with the first conductive layer 121 and the second conductive layer 122 to remove the corresponding first conductive layer 121 and the second conductive layer 122. It should be noted that the etching liquid in step S123 and step S133 is the same, and illustratively, the etching liquid can be hydrogen peroxide. The reaction rate of the first conductive layer 121 with the etching liquid is greater than the reaction rate of the second conductive layer 122 with the etching liquid, and the etching time of the second etching is shorter than the etching time of the first etching. Exemplarily, the material of the first conductive layer 121 is copper, and the material of the second conductive layer 122 is molybdenum. The reaction rate of copper with hydrogen peroxide is greater than the reaction rate of molybdenum with hydrogen peroxide, so that the first groove section 131 and the second groove section 132 that are interconnected can be formed on the electrode 13, the first groove section 131 is closer to the carrier substrate 11 than the second groove section 132, and the opening area of ​​the first groove section 131 away from the carrier substrate 11 is greater than the opening area of ​​the second groove section 132 close to the carrier substrate 11. Thus, the first groove section 131 and the second groove section 132 with different opening areas can be formed on the electrode 13 by using the same etching solution, thereby saving production costs.

[0075] Please refer to Figure 17-Figure 19 , Fig.17 is a fourth process diagram of a method for manufacturing a light emitting device according to one or more embodiments of the present application; Fig.18 is a thirteenth structural schematic diagram of a light emitting device according to one or more embodiments of the present application; Fig.19 is a fourteenth structural schematic diagram of a light-emitting device according to one or more embodiments of the present application.

[0076] In some embodiments, before step S14, the manufacturing method further includes: step S21: forming an insulating layer 60 on the carrier substrate 11. Step S22: removing a portion of the insulating layer 60 corresponding to the electrode 13 to expose the electrode 13. Specifically, the insulating layer 60 that exposes the electrode 13 can be formed on the carrier substrate 11 by exposure, development and etching. Thus, the risk of short circuit of the electrode 13 can be reduced by the insulating layer 60. For example, when the number of electrodes 13 is two and they correspond to the positive and negative electrodes of the light-emitting layer 30 respectively, part of the insulating layer 60 can be located between the two electrodes 13, thereby reducing the risk of short circuit between the two electrodes 13 and improving the reliability of the light-emitting device 2.

[0077] In some embodiments, after step S22, the manufacturing method further includes: step S23: coating a reflective layer 70 on the side of the insulating layer 60 and the electrode 13 away from the carrier substrate 11. Step S24: removing a portion of the reflective layer 70 corresponding to the electrode 13 to expose the electrode 13. Specifically, the reflective layer 70 can be formed on the side of the insulating layer 60 away from the carrier substrate 11 by exposure, development and etching. The reflective layer 70 can be used to reflect the light beam emitted by the light-emitting layer 30. The reflective layer 70 can reflect the light beam emitted from the side of the light-emitting layer 30 to the side of the light-emitting layer 30 away from the carrier substrate 11, thereby improving the utilization rate of the light beam emitted by the light-emitting layer 30 and alleviating the risk of light beam waste.

[0078] Please refer to Figure 20-21 , Fig. 20 is a fifth flow chart of a method for manufacturing a light emitting device according to one or more embodiments of the present application; Fig.21 is a fifteenth structural schematic diagram of a light-emitting device according to one or more embodiments of the present application.

[0079] In some embodiments, after step S15, the manufacturing method further includes: step S16: forming a transparent protective glue 80 on the side of the light-emitting layer 30 away from the conductive medium layer 20. Specifically, the transparent protective glue 80 can cover the side of the light-emitting layer 30 away from the conductive medium layer 20 to transmit the light beam emitted by the light-emitting layer 30. The transparent protective glue 80 can provide protection for the light-emitting layer 30, and allow the light beam emitted by the light-emitting layer 30 to be transmitted outward through the transparent protective glue 80, thereby reducing the risk of damage to the light-emitting layer 30 through the transparent protective glue 80.

[0080] In summary, the present application provides a method for manufacturing a light-emitting device, the manufacturing method comprising: providing a conductive substrate 10, the conductive substrate 10 comprising a carrier substrate 11 and a conductive layer 12 which are stacked in sequence; performing a first etching on the conductive layer 12 to remove part of the conductive layer 12 and expose the carrier substrate 11, so that the remaining part of the conductive layer 12 forms an electrode 13 protruding from the carrier substrate 11; performing a second etching on the electrode 13 to form a first groove section 131 and a second groove section 132 which are interconnected on the electrode 13, the first groove section 131 being closer to the carrier substrate 11 than the second groove section 132, and the opening area of ​​the first groove section 131 on the side away from the carrier substrate 11 being larger than the opening area of ​​the second groove section 132 on the side close to the carrier substrate 11; forming a conductive medium layer 20 on the electrode 13, so that the conductive medium layer 20 at least fills the first groove section 131 and the second groove section 132; and arranging a light-emitting layer 30 on the side of the conductive medium layer 20 away from the carrier substrate 11, so that the light-emitting layer 30 is conductively connected to the electrode 13 through the conductive medium layer 20. Through the above-mentioned embodiment, the first etching and the second etching form the electrode 13, the first groove section 131 and the second groove section 132. The conductive medium layer 20 is filled in the first groove section 131 and the second groove section 132, thereby increasing the contact area between the conductive medium layer 20 and the electrode 13. The opening area of ​​the first groove section 131 away from the side of the supporting substrate 11 is larger than the opening area of ​​the second groove section 132 close to the side of the supporting substrate 11, which facilitates the conductive medium layer 20 to be better embedded in the second groove section 132, thereby making the connection between the conductive medium layer 20 and the electrode 13 tighter, and reducing the risk of poor contact between the light-emitting layer 30 and the electrode 13.

[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A method for manufacturing a light emitting device, characterized in that: The manufacturing method comprises: Providing a conductive substrate, the conductive substrate comprising a carrier substrate and a conductive layer stacked in sequence; Performing a first etching on the conductive layer to remove a portion of the conductive layer and expose the carrier substrate, so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate; Performing a second etching on the electrode to form a first groove section and a second groove section that are interconnected on the electrode, wherein the first groove section is closer to the carrier substrate than the second groove section, and an opening area of ​​the first groove section on a side away from the carrier substrate is larger than an opening area of ​​the second groove section on a side close to the carrier substrate; forming a conductive medium layer on the electrode so that the conductive medium layer fills at least the first slot section and the second slot section; A light-emitting layer is arranged on a side of the conductive medium layer away from the carrier substrate, so that the light-emitting layer is conductively connected to the electrode through the conductive medium layer.

2. The manufacturing method according to claim 1, characterized in that: The conductive layer includes a first conductive layer and a second conductive layer. The first conductive layer is closer to the carrier substrate than the second conductive layer. The first conductive layer is used to form the first slot segment, and the second conductive layer forms the second slot segment.

3. The manufacturing method according to claim 2, characterized in that: The step of performing a first etching on the conductive layer to remove a portion of the conductive layer and expose the carrier substrate so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate comprises: Disposing a first resist on a side of the second conductive layer away from the first conductive layer; patterning the first resist to form first openings spaced apart, with portions of the second conductive layer exposed through the first openings; removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening, so that the remaining first conductive layer and the remaining second conductive layer form the electrode; The first resist is removed.

4. The manufacturing method according to claim 3, characterized in that: The step of etching the electrode for a second time to form a first groove section and a second groove section interconnected with each other on the electrode, wherein the first groove section is closer to the carrier substrate than the second groove section, and an opening area of ​​the first groove section away from the carrier substrate is larger than an opening area of ​​the second groove section close to the carrier substrate comprises: Disposing a second resist on a side of the second conductive layer away from the first conductive layer; patterning the second resist to form second openings spaced apart, with portions of the second conductive layer exposed through the second openings; removing the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening to form the first slot segment and the second slot segment; The second resist is removed.

5. The manufacturing method according to claim 4, characterized in that: The step of removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening so that the remaining first conductive layer and the second conductive layer form the electrode comprises: removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening by using an etching solution; The step of removing the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening to form the first slot segment and the second slot segment comprises: removing the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening by using the etching solution; Wherein, a reaction rate between the first conductive layer and the etching solution is greater than a reaction rate between the second conductive layer and the etching solution.

6. The manufacturing method according to claim 1, characterized in that: Before the step of forming a conductive medium layer on the electrode so that the conductive medium layer at least fills the first slot segment and the second slot segment, the manufacturing method further comprises: forming an insulating layer on the carrier substrate; The portion of the insulating layer corresponding to the electrode is removed to expose the electrode.

7. The manufacturing method according to claim 6, characterized in that: After the step of removing the portion of the insulating layer corresponding to the electrode to expose the electrode, the manufacturing method further comprises: Coating a reflective layer on the side of the insulating layer and the electrode facing away from the supporting substrate; A portion of the reflective layer corresponding to the electrode is removed to expose the electrode.

8. The manufacturing method according to claim 1, characterized in that: After the step of providing a light-emitting layer on a side of the conductive medium layer away from the carrier substrate, the manufacturing method further comprises: A transparent protective glue is formed on the side of the light emitting layer away from the conductive medium layer.

9. A light emitting device, characterized in that: The light-emitting device is prepared by the light-emitting device manufacturing method according to any one of claims 1 to 8.

10. A display device, characterized in that: The display device comprises the light emitting device according to claim 9.

Images