Cleaning device and cleaning method of thin film deposition machine chamber

Abstract

The invention provides a cleaning device and a cleaning method of a thin film deposition machine chamber. The cleaning device comprises a process chamber, the process chamber is internally provided with a carrying table and an ion generator, the carrying table is used for placing an adsorption sheet, and the ion generator is used for applying charges to the adsorption sheet; the transfer mechanism is used for transferring the adsorption sheet into at least one cavity of the thin film deposition machine table to adsorb impurity particles; and the vacuum pump is communicated with the process chamber and is used for extracting gas in the process chamber, so that the air pressure in the process chamber reaches the preset pressure. Under the condition that the thin film deposition machine table is not shut down, the ion generator enables the adsorption sheet to carry electrostatic charges, the transfer mechanism conveys the adsorption sheet carrying the electrostatic charges to any cavity of the thin film deposition machine table, impurity particles in one cavity of the thin film deposition machine table are adsorbed through the electrostatic interaction on the adsorption sheet, and the adsorption sheet is separated from the adsorption sheet. Therefore, abnormity caused by thin film deposition is reduced, the production efficiency of the thin film deposition machine is improved, and manpower is saved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a cleaning device and a cleaning method for a chamber of a thin film deposition machine. Background Art

[0002] When a semiconductor deposition machine processes a wafer, the wafer will move through multiple locations. When a module of the deposition machine is contaminated, the contamination area will expand when the wafer moves between modules, causing contamination of multiple modules. Therefore, in addition to reducing the risk of increased particle contamination during deposition, methods should also be sought to reduce the possibility of particle contamination during the transmission process before deposition. Particle contamination will affect the subsequent processes, such as blocking or shielding effects in etching and lithography processes, and will also lead to increased defects in semiconductor components, thereby affecting product yield and performance.

[0003] In order to reduce the risk of particle contamination during deposition, the modules of the deposition machine are usually shut down for regular cleaning and maintenance. However, this action usually lasts for dozens of hours or even days, reducing the production efficiency and output of semiconductor devices. The cleaning fluids used by equipment maintenance personnel usually involve alcohols, ketones, ethers and other liquids, which have the risk of causing adverse effects on human health. Therefore, it is necessary to explore a method for cleaning semiconductor machines without downtime. Summary of the invention

[0004] In view of the problems in the prior art, the purpose of the present invention is to provide a cleaning device and a cleaning method for a chamber of a thin film deposition machine. The cleaning device can clean each chamber of the thin film deposition machine without stopping the thin film deposition machine, thereby improving the efficiency of cleaning the thin film deposition machine.

[0005] An embodiment of the present invention provides a cleaning device for cleaning at least one chamber of a thin film deposition machine, comprising:

[0006] A process chamber, wherein a carrier and an ion generator are arranged in the process chamber, the carrier is used to place an adsorption sheet, and the ion generator is used to apply electric charge to the adsorption sheet;

[0007] A transfer mechanism, used for transferring the adsorption sheet to at least one chamber of the thin film deposition machine to adsorb impurity particles;

[0008] A vacuum pump is connected to the process chamber and is used to extract gas in the process chamber so that the gas pressure in the process chamber reaches a preset pressure.

[0009] In some embodiments, a gas mechanism is further included, which is connected to the process chamber and is used to transport an inert gas into the process chamber.

[0010] In some embodiments, the transport mechanism includes a robot arm for transferring the adsorption sheet into a chamber of the thin film deposition machine.

[0011] In some embodiments, the transfer mechanism further includes a slider, the robotic arm is disposed on the slider, and the slider drives the robotic arm to move along a first direction.

[0012] In some embodiments, the adsorption sheet is a metal-coated silicon sheet.

[0013] In some embodiments, an air hole is provided on the carrier, and the air hole is connected to the vacuum generator.

[0014] In some embodiments, the inert gas is oxygen or nitrogen.

[0015] In some embodiments, a movable plate is further provided in the transfer chamber to isolate or connect the transfer chamber with the chamber of the thin film deposition machine.

[0016] The embodiment of the present invention further provides a method for cleaning a chamber of a thin film deposition machine, using the cleaning device as described above for cleaning, comprising the steps of:

[0017] The vacuum pump is running, the ion generator generates ions, and the adsorption sheet is charged with static electricity of a first charge;

[0018] The transport mechanism transfers the adsorption sheet from the process chamber to a chamber of the thin film deposition machine to adsorb foreign particles in the chamber;

[0019] The transport mechanism transfers the adsorption sheet and returns it to the carrier in the process chamber;

[0020] The ion generator operates to generate ions, so that the adsorption sheet has a second charge of static electricity to neutralize the first charge of static electricity of the adsorption sheet.

[0021] In some embodiments, the cleaning device further comprises a gas mechanism, and after causing the adsorption sheet to have static electricity with a second charge, the cleaning device further comprises the steps of:

[0022] The inert gas is delivered into the process chamber through the gas mechanism to purge the impurity particles on the surface of the adsorption sheet.

[0023] The cleaning device and the cleaning method for the chamber of a thin film deposition machine provided by the present invention have the following advantages:

[0024] The cleaning device provided in the embodiment of the present invention can carry electrostatic charge on the adsorption sheet by the ion generator without stopping the thin film deposition machine, and the transfer mechanism will transfer the adsorption sheet carrying the electrostatic charge to any chamber of the thin film deposition machine. The electrostatic effect on the adsorption sheet can be used to adsorb impurity particles in a chamber of the thin film deposition machine, such as dust or film particles, to improve the cleanliness of a chamber of the thin film deposition machine, thereby reducing abnormalities caused by thin film deposition; and it can also reduce the number of manual cleaning of the thin film deposition machine, improve the production efficiency of the thin film deposition machine, and save manpower. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Other features, objectives and advantages of the present invention will become more apparent from a reading of the detailed description of non-limiting embodiments made with reference to the following accompanying drawings.

[0026] Figure 1 is a top view of a cleaning device and a thin film deposition machine according to an embodiment of the present invention;

[0027] Figure 2 is a side view of a cleaning device according to an embodiment of the present invention;

[0028] Figure 3 The figure is a flow chart of a method for cleaning a chamber of a thin film deposition machine provided by one embodiment of the present invention.

[0029] Reference numerals:

[0030] 10 stage 100 process chamber

[0031] 20 Ion Generator 200 Transport Chamber

[0032] 30 Adsorption sheet 1000 Deposition chamber

[0033] 40 Transfer mechanism 1100 Wafer

[0034] 50 Vacuum Pump 2000 Transfer Chamber

[0035] 60 Gas mechanism 2100 Transmission mechanism

[0036] 61 Gas pipeline 3000 Transition chamber DETAILED DESCRIPTION

[0037] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present invention will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their repeated description will be omitted.

[0038] In the representations of the present application, the representations with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. Moreover, the represented specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples represented in the present application and the features of the different embodiments or examples, unless they contradict each other.

[0039] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0040] It should be further understood that the terms "comprises" and "includes" indicate the presence of features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0041] To prepare the wafer into the required semiconductor device, multiple processes such as deposition, etching, photolithography and cleaning are required. When particle contamination occurs during the deposition of thin films, it not only affects the quality of the film layer, but also affects the process after deposition, such as blocking effect in the etching process and shielding effect in the development process, which in turn leads to an increase in defects in semiconductor devices and affects product yield and performance. Therefore, it is particularly important to reduce the particle contamination during thin film deposition. Particle contamination during thin film deposition not only occurs in the reaction chamber of the thin film deposition machine, but may also be caused by particle contamination when the wafer enters the reaction chamber from outside the reaction chamber. Therefore, it is necessary to regularly clean each chamber of the deposition machine. The current cleaning method is mostly manual cleaning after shutdown. This cleaning method takes too long to clean, has low cleaning efficiency, affects the output of the production line, and has a certain impact on human health.

[0042] To solve the above technical problems, an embodiment of the present invention provides a cleaning device for cleaning at least one chamber of a thin film deposition machine, so as to improve the cleaning efficiency of the thin film deposition machine, save manpower, and reduce the impact on production line output.

[0043] First, a brief introduction to the thin film deposition machine is given. Figure 1 FIG. 1 shows a top view of a thin film deposition machine and a cleaning device. Figure 1 As shown, the thin film deposition machine includes a deposition chamber 1000, a transfer chamber 2000 and a transition chamber 3000, and the deposition chamber 1000 and the transition chamber 3000 are respectively connected to the transfer chamber 2000. Among them, the deposition chamber 1000 has a deposition module (not shown in the figure), and the deposition module is used to perform a deposition process on the wafer 1100, that is, to form a thin film on the wafer 1100; the deposition process may include a chemical vapor deposition process, a physical vapor deposition process or an atomic layer deposition process. The transfer chamber 2000 has a transmission mechanism 2100, and the transmission mechanism 2100 is used to deliver and take and place the wafer 1100. The transition chamber 3000 is used to temporarily store the wafer 1100. The specific layout of the thin film deposition machine is not limited to the structure shown above. For example, there may be multiple deposition chambers 1000 and multiple transition chambers 3000. The multiple deposition chambers 1000 are sequentially arranged on the left and right sides of the transfer chamber 2000. The transfer mechanism 2100 in the transfer chamber 2000 is used to take out the wafer 1100 to be coated from the corresponding transition chamber 3000, and to take out the wafer 1100 that has been deposited from the corresponding deposition chamber 1000.

[0044] When the transition chamber 3000 is opened to place the wafer to be coated, particles from the external environment are easily introduced, which makes the cleanliness in the transition chamber 3000 insufficient and the particle size too high. When the particles introduced from the external environment fall on the surface of the wafer 1100, the thin film will cover these particles after the thin film is deposited. Therefore, the particle size in the transition chamber 3000 should not be too high. During the process of transferring wafers, the transfer chamber 2000 will be connected to the transition chamber 3000 and the deposition chamber 1000 respectively, so particles may be introduced from both chambers, further contaminating the two chambers and increasing the particle size in the two chambers. Therefore, it is necessary to regularly inspect each chamber of the thin film deposition machine.

[0045] Furthermore, a cleaning device provided by an embodiment of the present invention is described below. Figure 2 FIG. 2 shows a side view of a thin film deposition machine according to an embodiment of the present invention. Figure 1 and Figure 2 As shown, the cleaning device comprises:

[0046] The carrier 10 and the ion generator 20 are arranged in the process chamber 100. The carrier 10 is used to place the adsorption sheet 30, and the ion generator 20 is used to apply electric charge to the adsorption sheet 30 so that the adsorption sheet 30 is electrostatically charged.

[0047] The transfer mechanism 40 is provided in the transfer chamber 200 and is used to transfer the adsorption sheet 30 with static electricity to at least one chamber of the thin film deposition machine to adsorb impurity particles; the adsorption sheet 30 with static electricity can be transferred to the deposition chamber 1000, the transfer chamber 2000 and the transition chamber 3000 of the thin film deposition machine respectively;

[0048] The vacuum pump 50 is connected to the process chamber 100 and is used to extract the gas in the process chamber 100 so that the gas pressure in the process chamber reaches a preset pressure.

[0049] The adsorption sheet 30 is made to carry electrostatic charge through the ion generator 20, and the transport mechanism 40 transfers the adsorption sheet 30 carrying the electrostatic charge to any chamber of the thin film deposition machine, and utilizes the electrostatic effect on the adsorption sheet 30 to adsorb impurity particles in a chamber of the thin film deposition machine, such as dust or film particles, so as to improve the cleanliness of a chamber of the thin film deposition machine, thereby reducing the abnormality caused by thin film deposition when the thin film deposition machine is depositing the thin film; the cleaning device in this embodiment can clean the thin film deposition machine without stopping the thin film deposition machine, thereby reducing the number of shutdowns of the thin film deposition machine, improving the production efficiency of the thin film deposition machine, reducing the number of manual cleaning of the thin film deposition machine, and saving manpower.

[0050] Specifically, the ion generator 20 may be an ion generator in the prior art. The working principle of the ion generator 20 may refer to the working principle of the ion generator in the prior art, which will not be described in detail here.

[0051] For further information, please refer to Figure 1 and Figure 2The cleaning device also includes a gas mechanism 60, which is connected to the process chamber 100, and the gas mechanism 60 is used to transport gas into the process chamber 100. In the first aspect, the gas mechanism 60 can provide ionized gas, such as oxygen, nitrogen, etc., for the ion generator 20 to generate positive ions and negative ions; when the ion generator 20 is running, the gas can be separated into positive ions and negative ions, thereby causing the adsorption sheet 30 to have positive or negative static electricity. In the second aspect, the gas can be a cleaning gas, such as nitrogen; these gases are used to purge the process chamber 100 to remove dust in the process chamber 100. In the third aspect, the gas can be an inert gas, such as nitrogen; when the process chamber 100 needs to be opened, a certain amount of these gases are provided to make the process chamber 100 reach a certain air pressure, and when the process chamber 100 is at the same air pressure as the external environment, the process chamber 100 can be opened.

[0052] Specifically, Figure 2 As shown, the gas mechanism 60 includes gas pipelines 61 arranged at the top and the bottom of the process chamber 100 , and required gases are transported into the process chamber 100 through the gas pipelines 61 .

[0053] Furthermore, if Figure 1 and Figure 2 As shown, in this embodiment, the transfer mechanism 40 includes a robot arm, which is used to transfer the adsorption sheet 30 to the chamber of the thin film deposition machine. The robot arm is flexible in movement and has high efficiency in transferring the adsorption sheet 30.

[0054] Furthermore, in another embodiment, the transfer mechanism 40 also includes a slider (not shown in the figure), and the robotic arm is arranged on the slider, and the slider drives the robotic arm to move along the first direction, so that the robotic arm can accurately move to a fixed position, thereby improving the transfer efficiency of the transfer mechanism. The first direction here is the up and down direction or the left and right direction as seen in the drawing. Affected by the length and rotation angle of the robotic arm, it may be difficult for the robotic arm to transfer the adsorption sheet 30 to a chamber of the thin film deposition machine. Therefore, a slider is provided here to connect the robotic arm, so that the slider drives the robotic arm to first move toward a chamber close to the thin film deposition machine, and then the robotic arm is started to transfer the adsorption sheet 30 to a chamber in the thin film deposition machine to adsorb dust and other particles, thereby improving the accuracy of the robotic arm reaching the corresponding position of a chamber in the thin film deposition machine.

[0055] Specifically, for example, the current position of the robot arm is close to the transfer chamber 2000 of the thin film deposition machine (for example Figure 2 The next step is to clean the deposition chamber 1000, so the robot arm is required to transfer the adsorption sheet 30 to the deposition chamber 1000, so the slider can be moved upward. When the slider drives the robot arm to transfer to Figure 2When the dotted line robot arm is in the position shown above, the robot arm can be further started to drive the adsorption sheet 30 into the deposition chamber 1000 to clean the chamber. When the transition chamber 3000 needs to be cleaned in the next step, the robot arm needs to transfer the adsorption sheet 30 to the transition chamber 3000. The slider can drive the robot arm to the corresponding position of the transition chamber 3000 (for example, Figure 2 The robot arm further transfers the adsorption sheet 30 to the transition chamber 3000.

[0056] Further, the adsorption sheet 30 is a metal-plated silicon sheet. For example, the adsorption sheet 30 can be a copper-plated silicon sheet, but the adsorption sheet 30 is not limited thereto. Further, an insulating layer is provided on the back of the adsorption sheet 30 to prevent static electricity from being lost during movement. The insulating layer can be aluminum oxide or ceramic material.

[0057] Furthermore, in some embodiments, the carrier 10 is provided with an air hole (not shown in the figure), which is connected to a vacuum generator. The vacuum generator is used to provide negative pressure to the carrier 10 through the air hole to fix the adsorption sheet 30 so that the position of the carrier 10 is not shifted.

[0058] Furthermore, in an embodiment of the present invention, a movable plate (not shown in the figure) is further provided in the transfer chamber 200 to isolate or connect the transfer chamber 200 with the chamber of the thin film deposition machine. For example, a first movable plate is provided in the transfer chamber 200, and the first movable plate is used to isolate or connect the transfer chamber 200 with the deposition chamber 1000 of the thin film deposition machine; a second movable plate is provided in the transfer chamber 200 to isolate or connect the transfer chamber 200 with the transmission chamber 2000 of the thin film deposition machine; a third movable plate is provided in the transfer chamber 200 to isolate or connect the transition chamber 3000 of the thin film deposition machine. When one of the first movable plate, the second movable plate and the third movable plate is opened, the other two movable plates are closed accordingly to ensure that the chambers of the thin film deposition machine are not connected, so as to ensure that cleaning one of the chambers does not affect the cleanliness of other chambers. The opening and closing of each movable plate can be set according to actual needs, and no specific limitation is made here.

[0059] Furthermore, since the chambers of the thin film deposition machine may not be connected, when the adsorption sheet 30 cleans the chambers, it is not necessary to strictly follow the order of cleaning the deposition chamber 1000 first, then cleaning the transfer chamber 2000, and finally cleaning the transition chamber 3000. For example, when the deposition chamber 1000 is working, the cleaning device can perform the cleaning steps to clean the transfer chamber 2000 and the transition chamber 3000 respectively, which will not affect the work of the deposition chamber 1000 and can also improve the efficiency of cleaning the chambers of the thin film deposition machine. In addition, the cleaning device provided in the embodiment of the present invention can also perform cleaning without stopping the thin film deposition machine, thereby improving the production efficiency of the thin film deposition machine and increasing the output of the thin film deposition machine.

[0060] Furthermore, a movable plate is also provided in the process chamber 100 to isolate or connect the transfer chamber 200 or the process chamber 100. When the transfer mechanism 40 transfers the adsorption sheet 30, the movable plate is opened, and when the transfer mechanism 40 does not move the adsorption sheet 30, the movable plate is closed.

[0061] It should also be noted that in order to ensure that the cleaning step of the cleaning device is not affected by whether the thin film deposition machine is working, the process chamber 100 of the cleaning device needs to have approximately the same air pressure as the transfer chamber 200 and the chamber to be cleaned of the thin film deposition machine, so that the movable plates can be opened in time to allow the corresponding chambers to be connected, and therefore the transfer chamber 200 can be connected to the vacuum pump 50.

[0062] Furthermore, the cleaning device of the embodiment of the present invention also includes a control mechanism (not shown in the figure), which realizes the automatic operation of the ion generator 20, the transport mechanism 40, the vacuum pump 50, the gas mechanism 60, etc., thereby saving manpower and improving the cleaning efficiency of the cleaning device.

[0063] Furthermore, an embodiment of the present invention also provides a method for cleaning a chamber of a thin film deposition machine, using the cleaning device as described above for cleaning. Figure 3 FIG. 1 is a flow chart of a method for cleaning a chamber of a thin film deposition machine according to an embodiment of the present invention. Figure 3 As shown, the cleaning method comprises the steps of:

[0064] Step S100: the vacuum pump 50 is running, the ion generator 20 generates ions, and the adsorption sheet 30 is charged with static electricity of a first charge;

[0065] Step S200: The transfer mechanism 40 transfers the adsorption sheet 30 from the process chamber 100 to a chamber of a thin film deposition machine to adsorb impurity particles in the chamber;

[0066] Step S300: The transport mechanism transfers the adsorption sheet 30 and returns it to the carrier 10 in the process chamber 100;

[0067] Step S400 : the ion generator 20 generates ions, so that the adsorption sheet 30 has static electricity of a second charge to neutralize the static electricity of the first charge of the adsorption sheet 30 .

[0068] The ion generator 20 makes the adsorption sheet 30 carry static electricity of the first charge, and the transfer mechanism 40 transfers the electrostatic adsorption sheet 30 carrying the first charge to any chamber of the thin film deposition machine, and utilizes the static electricity on the adsorption sheet 30 to adsorb impurity particles in a chamber of the thin film deposition machine, such as dust or film particles, to improve the cleanliness of a chamber of the thin film deposition machine, thereby enabling the thin film deposition machine to reduce the abnormality caused by thin film deposition when depositing thin films; the cleaning device in this embodiment can clean the thin film deposition machine without stopping the thin film deposition machine, thereby reducing the number of shutdowns of the thin film deposition machine, improving the production efficiency of the thin film deposition machine, reducing the number of manual cleaning of the thin film deposition machine, and saving manpower.

[0069] Furthermore, the cleaning device further includes a gas mechanism 60, and after step S400 causes the adsorption sheet 30 to have static electricity with a second charge, the cleaning device further includes the following steps:

[0070] An inert gas is delivered into the process chamber 100 through a gas mechanism to purge impurity particles on the surface of the adsorption sheet 30 .

[0071] When the ion generator 20 causes the adsorption sheet 30 to carry the second charge of static electricity, the first charge and the second charge on the adsorption sheet 30 are neutralized, and the dust on the surface of the adsorption sheet 30 is no longer attracted by static electricity and adsorbed on the surface of the adsorption sheet 30. When the gas mechanism 60 is used to purge the surface of the adsorption sheet 30, the adsorbed dust and particles are further accelerated to leave the surface of the adsorption sheet 30. Under the action of the vacuum pump 50, the dust and particles are discharged from the process chamber 100 to achieve the purpose of cleaning the adsorption sheet 30. When a new round of cleaning of the thin film deposition chamber is required, the above steps S100 to S400 are repeated to use the adsorption sheet 30 to adsorb dust or particles in each chamber of the thin film deposition machine.

[0072] It should be noted that the cleaning cycle of at least one chamber of a thin film deposition machine using the above cleaning method can be formulated according to actual production experience and is not specifically limited here.

[0073] It should be noted that the adsorption sheet 30 can be replaced with a new adsorption sheet 30 after cleaning at regular intervals to avoid excessive use of the adsorption sheet 30, which may cause the cleanliness of the adsorption sheet surface to decrease, thereby reducing the ability to clean and adsorb impurities in each chamber of the thin film deposition machine. The specific replacement cycle of the adsorption sheet 30 can be set according to the cumulative thickness of the thin film deposition or the cumulative coating time, and can be set according to actual production observations, and is not specifically limited here.

[0074] In summary, the cleaning device and the cleaning method of the thin film deposition machine provided by the present invention have the following advantages:

[0075] By making the ion generator carry electrostatic charge on the adsorption sheet, the transport mechanism will transfer the adsorption sheet carrying electrostatic charge to any chamber of the thin film deposition machine, and utilize the electrostatic effect on the adsorption sheet to adsorb impurity particles in a chamber of the thin film deposition machine, such as dust or film particles, to improve the cleanliness of a chamber of the thin film deposition machine, thereby enabling the thin film deposition machine to reduce the abnormality caused by thin film deposition when depositing thin films; the cleaning device in this embodiment can perform cleaning without stopping the thin film deposition machine, thereby reducing the number of shutdowns of the thin film deposition machine, improving the production efficiency of the thin film deposition machine, reducing the number of manual cleaning of the thin film deposition machine, and saving manpower.

[0076] The above contents are further detailed descriptions of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A cleaning device for cleaning at least one chamber of a thin film deposition machine, characterized in that: include: A carrier and an ion generator are arranged in the process chamber, the carrier is used to place an adsorption sheet, and the ion generator is used to apply electric charge to the adsorption sheet; A transfer mechanism, disposed in the transfer chamber, for transferring the adsorption sheet to at least one chamber of the thin film deposition machine to adsorb impurity particles; A vacuum pump is connected to the process chamber and is used to extract gas in the process chamber so that the gas pressure in the process chamber reaches a preset pressure.

2. The cleaning device according to claim 1, characterized in that It also includes a gas mechanism, which is connected to the process chamber and is used to transport gas into the process chamber.

3. The cleaning device according to claim 1, characterized in that: The transfer mechanism includes a robot arm for transferring the adsorption sheet to a chamber of the thin film deposition machine.

4. The cleaning device according to claim 3, characterized in that: The transfer mechanism also includes a slider, the mechanical arm is arranged on the slider, and the slider drives the mechanical arm to move along the first direction.

5. The cleaning device according to claim 1, characterized in that: The adsorption sheet is a metal-coated silicon sheet.

6. The cleaning device according to claim 1, characterized in that: The carrier is provided with an air hole, and the air hole is connected to the vacuum generator.

7. The cleaning device according to claim 2, characterized in that: The gas is oxygen or nitrogen.

8. The cleaning device according to claim 1, characterized in that: The transfer chamber is also provided with a movable plate for isolating or connecting the transfer chamber with the chamber of the thin film deposition machine.

9. A method for cleaning a thin film deposition machine chamber, characterized in that: Cleaning using the cleaning device according to any one of claims 1 to 8 comprises the steps of: The vacuum pump is running, and the ion generator is running to generate ions, so that the adsorption sheet has static electricity with a first charge; The transport mechanism transfers the adsorption sheet from the process chamber to a chamber of the thin film deposition machine to adsorb foreign particles in the chamber; The transport mechanism transfers the adsorption sheet and returns it to the carrier in the process chamber; The ion generator operates to generate ions, so that the adsorption sheet has a second charge of static electricity to neutralize the first charge of static electricity of the adsorption sheet.

10. The cleaning method according to claim 9, characterized in that: The cleaning device further comprises a gas mechanism, and after causing the adsorption sheet to have static electricity with a second charge, the cleaning device further comprises the following steps: The inert gas is delivered into the process chamber through the gas mechanism to purge the impurity particles on the surface of the adsorption sheet.

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