Improved cathode target external notch anode cap of magnetron sputtering device based on conventional column target discharge and use method of cathode target external notch anode cap

Abstract

The invention discloses an improved cathode target external notch anode cap of a magnetron sputtering device based on conventional column target discharge and a use method. The method belongs to the field of surface treatment. The problem that effective adjustment of plasma energy is limited due to the fact that the target-substrate distance is small and an anode cannot be inserted in an existing method is solved. The anode cover is arranged outside the columnar cathode target material, and the columnar cathode target material, the anode cover and the slender pipe barrel part are coaxially arranged and can axially rotate. The whole circumference of the discharge surface is fixed to be a partially cylindrical plane with an axial section, meanwhile, the periphery of the columnar target is coated with the anode cover, the anode cover is a circular tube with an axial notch in the side face, the end face is arc-shaped, and the single side is open, so that the discharge distance from the target surface to the anode cover is increased, the discharge difficulty of the built-in columnar target is reduced, and the discharge efficiency of the built-in columnar target is improved. Plasma energy can be effectively regulated and controlled by an electric field; synchronous cleaning of the target surface and the inner wall of the slender pipe barrel part is achieved, and uniform and efficient coating deposition of the inner wall is achieved by rotating the slender pipe barrel part at a constant speed.

Description

Technical Field

[0001] The invention belongs to the field of surface treatment, and in particular relates to an improved cathode target external notched anode cover of a magnetron sputtering device based on conventional column target discharge and a use method thereof. Background Art

[0002] With the progress of industrial society, tubular materials account for an increasing proportion in industrial production. For example, engine cylinders, oil pipelines, fighter jet tail nozzles, etc., such as stainless steel pipes, due to their inherent excellent properties, are widely used in building water supply and direct drinking water pipelines, playing a key role in protecting water resources, improving water quality, protecting people's health and improving the quality of life; in biomedical applications, many artificial organs have tubular spaces, such as thin and flexible slender tubes are the most basic components for preparing artificial blood vessels; especially the inner wall coating of gun liners and barrels used in the defense industry. Due to actual working conditions, the inner wall of gun liners and barrels needs to withstand extremely high temperatures (above 3000K), pressures (several hundred MPa) and corrosion from gunpowder combustion gas. Therefore, it is of great practical significance to properly treat the inner surface of the tube to make it have higher hardness, better friction and wear resistance, better high temperature and high pressure resistance, better corrosion resistance and better photoelectric performance.

[0003] Common methods for coating the inner wall of slender tubes include chemical vapor deposition (CVD), electroplating, and magnetron sputtering with built-in cylindrical targets. CVD technology requires the metal material to be heated above its boiling point, so it is not suitable for temperature-sensitive substrate materials. In addition, the deposition rate of this technology is slow and the ionization rate is too low. Although electroplating technology can achieve surface coating of complex structural parts, it has problems such as brittle coating, poor film-substrate bonding, serious environmental pollution, and low current utilization. Built-in cylindrical target magnetron sputtering technology has the advantages of being environmentally friendly and having a small restriction on the types of coatings that can be plated, but it is limited by the need for built-in magnetic fields and water-cooling structures, and the volume and size of the target are limited. For slender tubes, it is impossible to build the target while retaining a large target-substrate distance, and discharge is extremely difficult. Also, due to the limitation of the space inside the tube, it is impossible to set an anode cover between the target and the substrate. If a two-pole discharge method is adopted in which the target is connected to the positive electrode and the slender tube is connected to the positive electrode of the power supply, the effective regulation of the plasma energy will be greatly limited. At the same time, during the operation of this method, pollutants cannot be discharged during the plasma cleaning stage, and the target and the slender tube will contaminate each other. Therefore, how to optimize the shape and size of the cylindrical target built into the slender tube and the discharge environment has become a key issue that limits the further application of this method in the field of inner wall coating of slender tubes, and needs to be solved urgently. Summary of the invention

[0004] The purpose of the present invention is to solve the problem that the target-substrate distance is small and the anode cannot be inserted in the existing magnetron sputtering coating method with a cylindrical target built in a slender tube, which limits the effective regulation of plasma energy. By providing a magnetron sputtering device based on conventional cylindrical target discharge, an improved cathode target external notched anode cover and a use method thereof are provided.

[0005] An improved cathode target external notched anode cover of a magnetron sputtering device based on conventional column target discharge, comprising a magnet, a columnar cathode target material, an anode cover, a sputtering power supply, a slender tube member and a bias power supply;

[0006] The columnar cathode target is provided with an anode cover outside, and a slender tube is provided outside the anode cover, and the columnar cathode target, the anode cover and the slender tube are coaxially arranged and can rotate axially;

[0007] The columnar cathode target is connected to the negative output end of the sputtering power supply, and the positive output end of the sputtering power supply is connected to the anode cover and grounded; the elongated tube is connected to the negative output end of the bias power supply, and the positive output end of the bias power supply is connected to the anode cover and grounded;

[0008] The columnar cathode target is a partial cylinder, the partial cylinder has an axial cross section, and the vertical distance from the cross section to the center of the circle is half of the radius;

[0009] The anode cover is a partial circular tube, and an axial notch is opened on the side of the partial circular tube, and the notch is one quarter of the circumference.

[0010] Furthermore, the magnet is in the shape of a round rod, and is coaxially fixed to the center of the columnar cathode target, and the magnet and the columnar cathode target are at the same height.

[0011] Furthermore, the material of the metal target material on the outer surface of the columnar cathode target material is Cr, Ti, Ta, Cu, Ni, Zn, Nb, Sn, Al, Fe, Mg or Zr; or is nickel-chromium alloy, nickel-aluminum alloy, nickel-iron alloy, nickel-vanadium alloy, titanium-aluminum alloy, titanium-aluminum-silicon, gold-tin alloy, gold-palladium alloy, molybdenum-niobium alloy, ruthenium-chromium alloy, boron-iron alloy or silicon-iron alloy; and the anode cover (3) is made of 304 stainless steel.

[0012] Furthermore, the distance between the elongated tube and the columnar cathode target is 6 to 12 mm.

[0013] Furthermore, the sputtering power supply and the bias power supply are both direct current power supply, pulse power supply, high voltage power supply, radio frequency power supply, medium frequency power supply or high power pulse power supply.

[0014] Furthermore, during the cleaning stage of magnetron sputtering, the cross-section of the columnar cathode target and the notch of the anode cover are axially rotated to opposite directions; during the deposition stage of magnetron sputtering, the cross-section of the columnar cathode target and the notch of the anode cover are axially rotated to the same direction, and uniform deposition on the inner wall is achieved by rotating the slender tube at a uniform speed.

[0015] The above-mentioned method for using the improved cathode target external notched anode cover of the magnetron sputtering device based on conventional column target discharge is implemented by the following steps:

[0016] 1. Self-glow cleaning of the inner wall of slender tubes:

[0017] The vacuum chamber is evacuated, and working gas is introduced into the vacuum chamber to maintain the vacuum chamber pressure of 1-50 Pa, the positive output end of the bias power supply is connected to the anode cover and grounded, and the negative output end is connected to the slender tube member, the voltage of the bias power supply is controlled to be -50--2000V, and the duty cycle is 5%-100%, and the inner surface of the slender tube member is glow cleaned by plasma generated by the hollow cathode discharge effect to obtain the slender tube member after self-glow cleaning;

[0018] 2. High-energy ion cleaning of the inner wall of slender tubes:

[0019] The vacuum chamber pressure is maintained at 1-50 Pa, the negative output end of the sputtering power supply is connected to the columnar cathode target, the positive output end is connected to the anode cover and grounded, the negative output end of the bias power supply is connected to the slender tube member after self-glow cleaning, the positive output end is connected to the anode cover, the voltage of the sputtering power supply is controlled to be 200-2000V, the peak current is 0.1-100A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is -50--2000V, the duty cycle is 5%-100%, the cross section of the columnar cathode target and the notch of the anode cover are axially rotated to opposite directions, the target surface of the columnar cathode target and the inner wall of the slender tube member are synchronously cleaned, and the slender tube member after high-energy ion cleaning is obtained;

[0020] 3. Coating deposition on the inner wall of tube and barrel:

[0021] The vacuum chamber pressure is maintained at 1-50 Pa, the negative output end of the sputtering power supply is connected to the columnar cathode target, the positive output end is connected to the anode cover and grounded, the negative output end of the bias power supply is connected to the slender tube member after high-energy ion cleaning, the positive output end is connected to the anode cover, the voltage of the sputtering power supply is controlled to be 200-2000V, the peak current is 0.1-100A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is 0-500V, the duty cycle is 5%-100%, the cross section of the columnar cathode target and the notch of the anode cover are axially rotated to the same direction, and the coating on the inner wall of the tube member is deposited by rotating the slender tube member at a uniform speed, and a thin film is uniformly deposited on the inner wall of the slender tube member, thus completing the use method.

[0022] Furthermore, the working gas described in step one is argon, helium, neon, krypton, xenon, radon, oxygen, nitrogen, hydrogen, methane, hydrogen sulfide, ammonia, Ar+O2, Ar+N2, Ar+H2, O2+N2, O2+CH4, Ar+He or Ar+Xe; when the working gas is a mixed gas, the two are mixed in any ratio.

[0023] Furthermore, the time of the self-glow cleaning in step 1 is 5 minutes to 600 minutes; the time of the high-energy ion cleaning in step 2 is 5 minutes to 600 minutes.

[0024] Furthermore, the coating deposition time in step three is 5 minutes to 600 minutes.

[0025] Principles and beneficial effects of the present invention:

[0026] The present invention adjusts a conventional cylindrical target into a partial cylinder with an axial cross section, fixes the discharge surface from the entire circumference to a cylindrical plane with an axial cross section, and at the same time, covers the outer periphery of the cylindrical target with an anode cover, which is a partial circular tube with an axial notch on the side, an arc-shaped end face, and a single-side opening, thereby increasing the discharge distance from the target surface to the anode cover (anode of a sputtering power source), thereby reducing the discharge difficulty of the built-in cylindrical target; the plasma generated on the target surface can be transported to the inner wall of the slender tube member through the opening of the anode cover, and at the same time, this part of the plasma is pulled by the bias electric field between the anode cover and the slender tube member, and the plasma The daughter energy is effectively regulated by the electric field, which is conducive to the preparation of high-quality coatings. In addition, during the cleaning stage of magnetron sputtering, the cross-section of the cylindrical cathode target and the notch of the anode cover are axially rotated to opposite directions, which can achieve synchronous cleaning of the target surface of the cylindrical cathode target and the inner wall of the slender tube. The presence of the anode cover effectively avoids mutual contamination between the target surface of the cylindrical cathode target and the inner wall of the slender tube, ensuring effective cleaning of high-energy ions. During the deposition stage of magnetron sputtering, the cross-section of the cylindrical cathode target and the notch of the anode cover are axially rotated to the same direction, and the slender tube is rotated at a uniform speed to achieve uniform and efficient coating deposition on the inner wall.

[0027] The improved cathode target external notched anode cover of the magnetron sputtering device based on conventional column target discharge of the present invention is suitable for assisting magnetron sputtering coating of the inner wall of a slender tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 The schematic diagram of the improved cathode target external notched anode cover of the magnetron sputtering device based on conventional column target discharge of the present invention, wherein 1 represents a magnet, 2 represents a columnar cathode target material, 3 represents an anode cover, 4 represents a sputtering power supply, 5 represents a slender tube member, and 6 represents a bias power supply;

[0029] Figure 2A top cross-sectional view of the inner wall of the elongated tube member in the embodiment undergoing high-energy ion cleaning;

[0030] Figure 3 It is a top cross-sectional view of the inner wall coating deposition on the inner wall of the elongated tube member in the embodiment;

[0031] Figure 4 The cross-sectional electron microscope images of the metal Cr film deposited by magnetron sputtering on the inner wall of the slender tube with an inner diameter of 40 mm in the embodiment; the four images correspond to film thicknesses of 21.4 μm, 21.0 μm, 21.7 μm and 21.5 μm respectively;

[0032] Figure 5 2 is a discharge voltage and current waveform diagram of the sputtering power supply used in the embodiment. DETAILED DESCRIPTION

[0033] Specific implementation method 1: Figure 1 As shown, in this embodiment, a cathode target external notched anode cover of a magnetron sputtering device based on conventional column target discharge is improved, which includes a magnet 1, a columnar cathode target material 2, an anode cover 3, a sputtering power supply 4, a slender tube member 5 and a bias power supply 6;

[0034] The columnar cathode target 2 is provided with an anode cover 3 outside, and a slender tube member 5 is provided outside the anode cover 3. The columnar cathode target 2, the anode cover 3 and the slender tube member 5 are coaxially arranged and can all rotate axially.

[0035] The columnar cathode target 2 is connected to the negative output end of the sputtering power supply 4, and the positive output end of the sputtering power supply 4 is connected to the anode cover 3 and grounded; the elongated tube 5 is connected to the negative output end of the bias power supply 6, and the positive output end of the bias power supply 6 is connected to the anode cover 3 and grounded;

[0036] The columnar cathode target material 2 is a partial cylinder, the partial cylinder has an axial cross section, and the vertical distance from the cross section to the center of the circle is half of the radius;

[0037] The anode cover 3 is a partial circular tube, and an axial notch is opened on the side of the partial circular tube, and the notch is one quarter of the circumference.

[0038] Specific embodiment 2: This embodiment is different from specific embodiment 1 in that the magnet 1 is in the shape of a round rod, is coaxially fixed to the center of the columnar cathode target 2, and is at the same height as the columnar cathode target 2. Other aspects are the same as specific embodiment 1.

[0039] Specific embodiment 3: This embodiment is different from the specific embodiment 1 in that the material of the metal target material on the outer surface of the columnar cathode target 2 is Cr, Ti, Ta, Cu, Ni, Zn, Nb, Sn, Al, Fe, Mg or Zr; or is nickel-chromium alloy, nickel-aluminum alloy, nickel-iron alloy, nickel-vanadium alloy, titanium-aluminum alloy, titanium-aluminum-silicon, gold-tin alloy, gold-palladium alloy, molybdenum-niobium alloy, ruthenium-chromium alloy, boron-iron alloy or silicon-iron alloy; the anode cover 3 is made of 304 stainless steel. The rest is the same as the specific embodiment 1.

[0040] Specific embodiment 4: This embodiment is different from the specific embodiment 1 in that the distance between the elongated tube 5 and the columnar cathode target 2 is 6 to 12 mm. The rest is the same as the specific embodiment 1.

[0041] Specific embodiment 5: This embodiment is different from specific embodiment 1 in that the sputtering power supply 4 and the bias power supply 6 are both DC power supplies, pulse power supplies, high voltage power supplies, radio frequency power supplies, medium frequency power supplies or high power pulse power supplies. The rest is the same as specific embodiment 1.

[0042] Specific embodiment 6: This embodiment is different from the specific embodiment 1 in that, in the cleaning stage of magnetron sputtering, the cross section of the columnar cathode target 2 and the notch of the anode cover 3 are axially rotated to opposite directions; in the deposition stage of magnetron sputtering, the cross section of the columnar cathode target 2 and the notch of the anode cover 3 are axially rotated to the same direction, and uniform deposition on the inner wall is achieved by rotating the slender tube 5 at a constant speed. The rest is the same as the specific embodiment 1.

[0043] Specific embodiment 7: This embodiment is a method for using a cathode target external notched anode cover improved by a magnetron sputtering device based on conventional column target discharge, which is implemented by the following steps:

[0044] 1. Self-glow cleaning of the inner wall of slender tubes:

[0045] The vacuum chamber is evacuated, and working gas is introduced into the vacuum chamber to maintain the vacuum chamber pressure of 1-50 Pa. The positive output end of the bias power supply 6 is connected to the anode cover 3 and grounded, and the negative output end is connected to the slender tube member 5. The voltage of the bias power supply 6 is controlled to be -50--2000V, and the duty cycle is 5%-100%. The inner surface of the slender tube member 5 is glow cleaned by plasma generated by the hollow cathode discharge effect to obtain the slender tube member after self-glow cleaning;

[0046] 2. High-energy ion cleaning of the inner wall of slender tubes:

[0047] The vacuum chamber pressure is maintained at 1-50 Pa, the negative output end of the sputtering power supply 4 is connected to the columnar cathode target 2, the positive output end is connected to the anode cover 3 and grounded, the negative output end of the bias power supply 6 is connected to the slender tube member after self-glow cleaning, and the positive output end is connected to the anode cover 3, the voltage of the sputtering power supply 4 is controlled to be 200-2000V, the peak current is 0.1-100A, and the duty cycle is 0.1%-100%, the voltage of the bias power supply 6 is -50--2000V, and the duty cycle is 5%-100%, the cross section of the columnar cathode target 2 and the notch of the anode cover 3 are axially rotated to opposite directions, the target surface of the columnar cathode target 2 and the inner wall of the slender tube member 5 are synchronously cleaned, and the slender tube member after high-energy ion cleaning is obtained;

[0048] 3. Coating deposition on the inner wall of tube and barrel:

[0049] The vacuum chamber pressure is maintained at 1-50 Pa, the negative output end of the sputtering power supply 4 is connected to the columnar cathode target 2, the positive output end is connected to the anode cover 3 and grounded, the negative output end of the bias power supply 6 is connected to the slender tube member after high-energy ion cleaning, and the positive output end is connected to the anode cover 3, the voltage of the sputtering power supply 4 is controlled to be 200-2000V, the peak current is 0.1-100A, and the duty cycle is 0.1%-100%, the voltage of the bias power supply 6 is 0-500V, and the duty cycle is 5%-100%, the cross section of the columnar cathode target 2 and the notch of the anode cover 3 are axially rotated to the same direction, and the coating on the inner wall of the tube member is deposited by rotating the slender tube member 5 at a uniform speed, and a thin film is uniformly deposited on the inner wall of the slender tube member, that is, the method of use is completed.

[0050] The presence of the anode cover 3 in step 2 of this embodiment effectively avoids the mutual contamination between the target surface of the columnar cathode target 2 and the inner wall of the elongated tube 5, thereby ensuring the effective cleaning of high-energy ions.

[0051] Specific embodiment eight: This embodiment is different from specific embodiment seven in that the working gas in step one is argon, helium, neon, krypton, xenon, radon, oxygen, nitrogen, hydrogen, methane, hydrogen sulfide, ammonia, Ar+O2, Ar+N2, Ar+H2, O2+N2, O2+CH4, Ar+He or Ar+Xe; when the working gas is a mixed gas, the two are mixed in any ratio. The other steps and parameters are the same as those in specific embodiment seven.

[0052] Specific implementation method 9: This implementation method is different from specific implementation method 7 in that the time of the self-glow cleaning in step 1 is 5 minutes to 600 minutes, and the time of the high-energy ion cleaning in step 2 is 5 minutes to 600 minutes. The other steps and parameters are the same as those in specific implementation method 7.

[0053] Specific embodiment 10: This embodiment is different from specific embodiment 7 in that the coating deposition time in step 3 is 5 minutes to 600 minutes. The other steps and parameters are the same as those in specific embodiment 7.

[0054] The beneficial effects of the present invention are verified by the following examples:

[0055] Example:

[0056] A method for using an improved cathode target external notched anode cover of a magnetron sputtering device based on conventional column target discharge is implemented by the following steps:

[0057] 1. Self-glow cleaning of the inner wall of slender tubes:

[0058] The vacuum chamber is evacuated, argon gas is introduced into the vacuum chamber, and the pressure of the vacuum chamber is maintained at 5 Pa. The positive output end of the bias power supply 6 is connected to the anode cover 3 and grounded, and the negative output end is connected to the slender tube member 5. The voltage of the bias power supply 6 is controlled to be -800V, and the duty cycle is 65%. The inner surface of the slender tube member 5 is glow cleaned by plasma generated by the hollow cathode discharge effect, and the slender tube member after self-glow cleaning is obtained;

[0059] 2. High-energy ion cleaning of the inner wall of slender tubes:

[0060] The pressure of the vacuum chamber is maintained at 5 Pa, the negative output end of the sputtering power supply 4 is connected to the columnar cathode target 2, the positive output end is connected to the anode cover 3 and grounded, the negative output end of the bias power supply 6 is connected to the slender tube after self-glow cleaning, and the positive output end is connected to the anode cover 3, the voltage of the sputtering power supply 4 is controlled to be 200 V, the peak current is 100 A, and the duty cycle is 65%, the voltage of the bias power supply 6 is -800 V, and the duty cycle is 65%, and the cross section of the columnar cathode target 2 and the notch of the anode cover 3 are axially rotated to the opposite direction, as shown in FIG. Figure 2 As shown, the target surface of the columnar cathode target 2 and the inner wall of the elongated tube 5 are cleaned synchronously to obtain the elongated tube after high-energy ion cleaning;

[0061] 3. Coating deposition on the inner wall of tube and barrel:

[0062] The vacuum chamber pressure is maintained at 5 Pa, the negative output end of the sputtering power supply 4 is connected to the columnar cathode target 2, the positive output end is connected to the anode cover 3 and grounded, the negative output end of the bias power supply 6 is connected to the slender tube after high-energy ion cleaning, the positive output end is connected to the anode cover 3, the voltage of the sputtering power supply 4 is controlled to be 580 V, the peak current is 25 A, the frequency is 300 Hz, the pulse width is 100 μs, the duty cycle is 3%, the voltage of the bias power supply 6 is 20 V, the duty cycle is 5%, and the cross section of the columnar cathode target 2 and the notch of the anode cover 3 are axially rotated to the same direction, as shown in FIG. Figure 3As shown, by rotating the slender tube 5 at a uniform speed, a coating is deposited on the inner wall of the tube, and a thin film is uniformly deposited on the inner wall of the slender tube, thus completing the use method.

[0063] The time for the self-glow cleaning in step 1 of this embodiment is 15 minutes; the time for the high-energy ion cleaning in step 2 is 20 minutes.

[0064] The coating deposition time in step 3 of this embodiment is 120 minutes.

[0065] In this embodiment, the sputtering power supply 4 adopts a pulse power supply; the bias power supply 6 adopts a DC power supply.

[0066] In this embodiment, the metal target material on the outer surface of the columnar cathode target material 2 is made of Cr; the anode cover 3 is made of 304 stainless steel.

[0067] The slender tube member 5 in step 1 of this embodiment is made of maraging steel with an inner diameter of 40 mm and a length of 120 mm.

[0068] Figure 2 It is a top cross-sectional view of the inner wall of the elongated tube member in this embodiment undergoing high-energy ion cleaning (i.e., the cleaning stage of magnetron sputtering);

[0069] Figure 3 It is a top cross-sectional view of the inner wall coating deposition (i.e., the deposition stage of magnetron sputtering) on ​​the inner wall of the slender tube member in this embodiment;

[0070] Figure 4 This is a cross-sectional electron micrograph of the metal Cr film deposited by magnetron sputtering on the inner wall of a slender tube with an inner diameter of 40 mm in this embodiment; the cross-sectional electron micrograph shows that the film thicknesses at four positions are 21.4 μm, 21.0 μm, 21.7 μm and 21.5 μm, respectively; the results show that the film layer presents a dense, obvious columnar crystal structure with good uniformity; this is because the high-density plasma and high ionization rate generated by the discharge under narrow gap conditions produce strong ion bombardment on the film layer, thereby improving the density of the film layer.

[0071] Figure 5 : is the discharge voltage and current waveform diagram of the sputtering power supply used in this embodiment; Figure 5 It is shown in the figure that during the film deposition process in this embodiment, the actual sputtering power supply pulse voltage is 580V, the pulse peak current is 25A, the corresponding frequency is 300Hz, and the pulse width is 100μs.

[0072] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An improved cathode target external notched anode cover of a magnetron sputtering device based on conventional column target discharge, characterized in that: It comprises a magnet (1), a columnar cathode target (2), an anode cover (3), a sputtering power supply (4), a slender tube (5) and a bias power supply (6); An anode cover (3) is arranged outside the columnar cathode target (2), a slender tube member (5) is arranged outside the anode cover (3), and the columnar cathode target (2), the anode cover (3) and the slender tube member (5) are coaxially arranged and can all rotate axially; The columnar cathode target (2) is connected to the negative output end of the sputtering power supply (4), and the positive output end of the sputtering power supply (4) is connected to the anode cover (3) and grounded; the slender tube (5) is connected to the negative output end of the bias power supply (6), and the positive output end of the bias power supply (6) is connected to the anode cover (3) and grounded; The columnar cathode target (2) is a partial cylinder, the partial cylinder has an axial cross section, and the vertical distance from the cross section to the center of the circle is half of the radius; The anode cover (3) is a partial circular tube, and an axial notch is opened on the side of the partial circular tube, and the notch is one quarter of the circumference.

2. According to claim 1, a cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge is improved, characterized in that The magnet (1) is in the shape of a round rod and is coaxially fixed to the center of the columnar cathode target (2). The magnet (1) and the columnar cathode target (2) are at the same height.

3. According to claim 1, a cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge is improved, characterized in that The metal target material on the outer surface of the columnar cathode target (2) is made of Cr, Ti, Ta, Cu, Ni, Zn, Nb, Sn, Al, Fe, Mg or Zr; or is nickel-chromium alloy, nickel-aluminum alloy, nickel-iron alloy, nickel-vanadium alloy, titanium-aluminum alloy, titanium-aluminum-silicon, gold-tin alloy, gold-palladium alloy, molybdenum-niobium alloy, ruthenium-chromium alloy, boron-iron alloy or silicon-iron alloy; the anode cover (3) is made of 304 stainless steel.

4. The improved cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge according to claim 1, characterized in that The distance between the slender tube (5) and the columnar cathode target (2) is 6 to 12 mm.

5. The improved cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge according to claim 1, characterized in that The sputtering power supply (4) and the bias power supply (6) are both direct current power supplies, pulse power supplies, high voltage power supplies, radio frequency power supplies, medium frequency power supplies or high power pulse power supplies.

6. The improved cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge according to claim 1, characterized in that In the cleaning stage of magnetron sputtering, the cross section of the columnar cathode target (2) and the notch of the anode cover (3) are axially rotated to opposite directions; in the deposition stage of magnetron sputtering, the cross section of the columnar cathode target (2) and the notch of the anode cover (3) are axially rotated to the same direction, and uniform deposition on the inner wall is achieved by rotating the slender tube member (5) at a uniform speed.

7. A method for using the improved cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge as claimed in claim 1, characterized in that: It is implemented as follows:

1. Self-glow cleaning of the inner wall of slender tubes: The vacuum chamber is evacuated, and working gas is introduced into the vacuum chamber to maintain the vacuum chamber pressure at 1-50 Pa. The positive output end of the bias power supply (6) is connected to the anode cover (3) and grounded, and the negative output end is connected to the slender tube member (5). The voltage of the bias power supply is controlled to be -50--2000V, and the duty cycle is 5%-100%. The inner surface of the slender tube member (5) is glow cleaned by plasma generated by the hollow cathode discharge effect to obtain the slender tube member after self-glow cleaning; 2. High-energy ion cleaning of the inner wall of slender tubes: The vacuum chamber pressure is maintained at 1-50 Pa, the negative output end of the sputtering power supply (4) is connected to the columnar cathode target (2), the positive output end is connected to the anode cover (3) and grounded, the negative output end of the bias power supply (6) is connected to the slender tube member after self-glow cleaning, and the positive output end is connected to the anode cover (3), the voltage of the sputtering power supply is controlled to be 200-2000V, the peak current is 0.1-100A, and the duty cycle is 0.1%-100%, the voltage of the bias power supply is -50--2000V, and the duty cycle is 5%-100%, the cross section of the columnar cathode target (2) and the notch of the anode cover (3) are axially rotated to opposite directions, and the target surface of the columnar cathode target (2) and the inner wall of the slender tube member (5) are synchronously cleaned to obtain the slender tube member after high-energy ion cleaning; 3. Coating deposition on the inner wall of tube and barrel: The vacuum chamber pressure is maintained at 1-50 Pa, the negative output end of the sputtering power supply (4) is connected to the columnar cathode target (2), the positive output end is connected to the anode cover (3) and grounded, the negative output end of the bias power supply (6) is connected to the slender tube member after high-energy ion cleaning, the positive output end is connected to the anode cover (3), the voltage of the sputtering power supply is controlled to be 200-2000V, the peak current is 0.1-100A, the duty cycle is 0.1%-100%, the voltage of the bias power supply is 0-500V, the duty cycle is 5%-100%, the cross section of the columnar cathode target (2) and the notch of the anode cover (3) are axially rotated to the same direction, and the slender tube member (5) is rotated at a uniform speed to deposit a coating on the inner wall of the tube member, and a thin film is uniformly deposited on the inner wall of the slender tube member, thus completing the use method.

8. The method for using the improved cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge according to claim 7, characterized in that The working gas described in step 1 is argon, helium, neon, krypton, xenon, radon, oxygen, nitrogen, hydrogen, methane, hydrogen sulfide, ammonia, Ar+O2, Ar+N2, Ar+H2, O2+N2, O2+CH4, Ar+He or Ar+Xe; when the working gas is a mixed gas, the two are mixed in any ratio.

9. The method for using the improved cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge according to claim 7, characterized in that The time of the self-glow cleaning in step 1 is 5 minutes to 600 minutes; the time of the high-energy ion cleaning in step 2 is 5 minutes to 600 minutes.

10. The method for using the improved cathode target external notched anode cover of a magnetron sputtering device based on conventional cylindrical target discharge according to claim 7, characterized in that The coating deposition time in step 3 is 5 min to 600 min.

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